WO2024078171A1 - 一种多频压电微机械超声换能器及制备方法 - Google Patents

一种多频压电微机械超声换能器及制备方法 Download PDF

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WO2024078171A1
WO2024078171A1 PCT/CN2023/115748 CN2023115748W WO2024078171A1 WO 2024078171 A1 WO2024078171 A1 WO 2024078171A1 CN 2023115748 W CN2023115748 W CN 2023115748W WO 2024078171 A1 WO2024078171 A1 WO 2024078171A1
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layer
ultrasonic transducer
piezoelectric
electrode layer
micromechanical ultrasonic
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PCT/CN2023/115748
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English (en)
French (fr)
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郑音飞
段会龙
王泽欣
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浙江大学
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Publication of WO2024078171A1 publication Critical patent/WO2024078171A1/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems

Definitions

  • the present invention relates to the field of transducers, and in particular to a multi-frequency piezoelectric micromechanical ultrasonic transducer and a preparation method thereof.
  • MUTs are generally divided into two categories: capacitive micro-machined ultrasonic transducers (CMUT) and piezoelectric micro-machined ultrasonic transducers (PMUT).
  • CMUT capacitive micro-machined ultrasonic transducers
  • PMUT piezoelectric micro-machined ultrasonic transducers
  • CMUT capacitive micro-machined ultrasonic transducers
  • PMUT piezoelectric micro-machined ultrasonic transducers
  • piezoelectric micromechanical transducers based on aluminum nitride films are at the forefront of research.
  • PMUT devices with multiple operating frequencies, but most of them focus on the mechanical and electrical domains, such as changing the shape of the vibrating diaphragm and optimizing the electrode configuration. Few consider using the coupling effect between the diaphragm and the medium in the acoustic domain to achieve multi-frequency vibration.
  • the purpose of the present invention is to provide a multi-frequency piezoelectric micromechanical ultrasonic transducer and a preparation method thereof, combining a Helmholtz resonant cavity with a piezoelectric film to achieve multiple resonant frequencies of the transducer.
  • the present invention provides the following solutions:
  • a multi-frequency piezoelectric micromechanical ultrasonic transducer comprising: a top electrode layer, a piezoelectric layer, a bottom electrode layer, an insulating layer, a structural layer and a substrate arranged in sequence;
  • Two Helmholtz resonant cavities are arranged on the base; the two Helmholtz resonant cavities are connected by necks. The channels are connected; the structural layer covers the neck channel and the two Helmholtz resonant cavities.
  • both of the two Helmholtz resonant cavities are rectangular parallelepiped cavities.
  • the top electrode layer, the piezoelectric layer, the bottom electrode layer and the insulating layer are each provided with two groups; each group of top electrode layer, piezoelectric layer, bottom electrode layer and insulating layer provided in sequence corresponds to a Helmholtz resonant cavity.
  • the material of the piezoelectric layer is aluminum nitride.
  • the material of the structural layer is silicon.
  • the insulating layer is made of silicon dioxide.
  • the present invention also provides a method for preparing a multi-frequency piezoelectric micromechanical ultrasonic transducer, which is used to prepare the multi-frequency piezoelectric micromechanical ultrasonic transducer described above, and the multi-frequency piezoelectric micromechanical ultrasonic transducer preparation method comprises:
  • An insulating layer is deposited on the surface of the bottom electrode layer to obtain a multi-frequency piezoelectric micromechanical ultrasonic transducer.
  • the step of preparing the structural layer on the etched substrate by vapor deposition may specifically include:
  • a structural layer is prepared on the surface-polished sacrificial layer by using a vapor deposition method, and the surface of the structural layer is polished.
  • the method further comprises:
  • the through hole is filled.
  • the present invention discloses the following technical effects:
  • the present invention comprises: a top electrode layer, a piezoelectric layer, a bottom electrode layer, an insulating layer, a structural layer and a substrate arranged in sequence; two Helmholtz resonant cavities are arranged on the substrate; the two Helmholtz resonant cavities are connected through a neck channel; the structural layer covers the neck channel and the two Helmholtz resonant cavities.
  • the present invention combines the Helmholtz resonant cavity with the piezoelectric film to realize multiple resonant frequencies of the transducer.
  • FIG1 is a schematic diagram of the structure of a multi-frequency piezoelectric micromechanical ultrasonic transducer provided by the present invention
  • FIG2 is a structural diagram of two conventional adjacent square PMUTs
  • FIG3 is a structural diagram of two adjacent PMUT cavities connected together through a neck channel
  • FIG4 is a schematic diagram of an equivalent circuit
  • FIG5 is a frequency response diagram of the surface average pressure when the neck length changes from 30 um to 70 um;
  • FIG6 is a frequency response diagram of the surface average pressure when the neck width changes from 50 um to 100 um;
  • FIG7 is a frequency response diagram of the surface average pressure when the neck height changes from 5um to 40um;
  • FIG8 is a schematic diagram of the emission bandwidth of a device in air.
  • the purpose of the present invention is to provide a multi-frequency piezoelectric micromechanical ultrasonic transducer and a preparation method, and to provide a method for combining a Helmholtz resonant cavity with a piezoelectric film to achieve multiple resonant frequencies of the transducer.
  • a multi-frequency piezoelectric micromechanical ultrasonic transducer provided by the present invention includes: a top electrode layer 1, a piezoelectric layer 2, a bottom electrode layer 3, an insulating layer 4, a structural layer 5 and a substrate 6 arranged in sequence.
  • Two Helmholtz resonant cavities 7 are arranged on the substrate 6 ; the two Helmholtz resonant cavities 7 are connected through a neck channel; and the structural layer 5 covers the neck channel and the two Helmholtz resonant cavities 7 .
  • the two Helmholtz resonant cavities 7 are both rectangular parallelepiped cavities.
  • the top electrode layer 1, the piezoelectric layer 2, the bottom electrode layer 3 and the insulating layer 4 are each provided with two groups; each group of the top electrode layer 1, the piezoelectric layer 2, the bottom electrode layer 3 and the insulating layer 4 arranged in sequence corresponds to a Helmholtz resonant cavity 7.
  • the material of the piezoelectric layer 2 is aluminum nitride.
  • the material of the structural layer 5 is silicon.
  • the material of the insulating layer 4 is silicon dioxide.
  • the multi-frequency piezoelectric micromechanical ultrasonic transducer proposed in the present invention connects the back cavities of two adjacent PMUT units through a narrow channel, thereby forming a "body cavity-neck-body cavity” series Helmholtz resonant cavity, as shown in FIG1 .
  • the whole device includes a conventional square PMUT 8 of a piezoelectric film sandwich structure between top and bottom electrodes on a structural layer 5.
  • the electrode layer is used to receive an external excitation voltage;
  • the piezoelectric layer 2 is made of piezoelectric material aluminum nitride and is used for electromechanical energy conversion;
  • the structural layer 5 silicon is used as a support layer to increase the stability of the device, and
  • the insulating layer 4 uses silicon dioxide as an insulating material between the bottom electrode layer 3 and the structural layer 5.
  • the equivalent circuit model of the multi-frequency PMUT device is shown in Figure 4.
  • the acoustic domain the acoustic resistance is increased due to the introduction of the resonant cavity.
  • u is the velocity in the mechanical domain
  • U is the velocity in the acoustic domain.
  • the PMUT unit is driven by the voltage Vin
  • C0 is the feedthrough capacitance
  • the electromechanical coupling is defined by the rotation ratio ⁇ .
  • Mm, Cm, and Rm are the mass, capacitance, and mechanical damping of the PMUT unit, respectively. From the mechanical domain to the acoustic domain, coupling is done through the surface area Aeff.
  • the free radiation impedance Z free of the square-clamped PMUT in the acoustic domain is: Where ⁇ 0 , c 0 are the medium density and the speed of sound respectively, R free , X free are the free radiation resistance and the free radiation reactance respectively, and j is an imaginary number.
  • the acoustic impedance Z ha of the Helmholtz resonant cavity 7 connected in series is: Where ⁇ is the angular frequency, M ha is the acoustic mass, C ha,1 is the acoustic capacitance of the left cavity, and C ha,2 is the acoustic capacitance of the right cavity.
  • the cavity acts as a capacitor with an acoustic capacitance
  • the neck acts as an inductor and is represented by the acoustic mass M ha , l n is the length of the neck cavity, and the Helmholtz cavity has an acoustic resistance
  • V 1 and V 2 are the volumes of the left and right resonant cavities
  • S 1 is the cross-sectional area of the resonant cavity
  • k is the wave number.
  • the mutual radiation impedance Zpp between two adjacent PMUT array elements is expressed as: d is the distance between two adjacent PMUT array elements.
  • the device can be manufactured through MEMS manufacturing process to achieve multiple operating frequencies and improved transmission performance.
  • the present invention also provides a method for preparing a multi-frequency piezoelectric micromechanical ultrasonic transducer, which is used to prepare the multi-frequency piezoelectric micromechanical ultrasonic transducer described above, and the multi-frequency piezoelectric micromechanical ultrasonic transducer preparation method comprises:
  • Two Helmholtz resonant cavities are etched on the substrate, and a communicating neck channel is etched between the two Helmholtz resonant cavities.
  • the structural layer is prepared on the etched substrate by using a vapor deposition method.
  • a bottom electrode layer, a piezoelectric layer and a top electrode layer are sequentially grown on the structural layer by using a magnetron sputtering process.
  • the piezoelectric layer and the top electrode layer are etched by plasma etching.
  • An insulating layer is deposited on the surface of the bottom electrode layer to obtain a multi-frequency piezoelectric micromechanical ultrasonic transducer.
  • the structure layer is prepared by vapor deposition on the etched substrate.
  • the body includes:
  • a wet silicon oxide layer is applied to the etched substrate.
  • Polycrystalline silicon is prepared as a sacrificial layer on the oxidized silicon layer by using a vapor deposition method, and the surface of the sacrificial layer is polished.
  • a structural layer is prepared on the surface-polished sacrificial layer by using a vapor deposition method, and the surface of the structural layer is polished.
  • the method further includes:
  • a through hole is etched to the sacrificial layer using a dry method.
  • the sacrificial layer is etched to the piezoelectric layer using a xenon difluoride solution to obtain a back cavity structure combined with the neck channel.
  • the through hole is filled.
  • the present invention also provides a specific workflow of a method for preparing a multi-frequency piezoelectric micromechanical ultrasonic transducer in practical application:
  • Step 1 A 3 ⁇ m thick SOI substrate was prepared on a 500 nm buried oxide as the base wafer material and cleaned using a standard silicon wafer cleaning process.
  • Step 2 Etching a Helmholtz cavity with a depth of 4 ⁇ m and a length of 180 ⁇ m on the surface of the above wafer, and etching a Helmholtz neck channel with a width of 50 ⁇ m and a length of 80 ⁇ m in two adjacent cavities.
  • Step 3 Apply a wet thermal silicon oxide layer to the device from step 2.
  • Step 4 Use low-temperature plasma enhanced chemical vapor deposition to prepare polysilicon as a sacrificial layer, and perform a surface polishing process.
  • Step 5 A 300 nm silicon dioxide layer prepared by plasma enhanced chemical vapor deposition was used as a support layer and the surface was polished.
  • Step 6 Grow a 200 nm thick molybdenum bottom electrode on the device in step 5 by magnetron sputtering, magnetron sputter 1.8 ⁇ m aluminum nitride (using 002 oriented crystals) on the bottom electrode as a piezoelectric layer, and then magnetron sputter 200 nm molybdenum on the piezoelectric layer as a top electrode layer.
  • Step 7 Dry-etch through holes to the polysilicon sacrificial layer.
  • Step 8 The sacrificial layer is etched using a xenon difluoride solution, thereby releasing the piezoelectric layer and forming a back cavity structure in which the cavity is combined with the Helmholtz neck.
  • Step 9 Fill the etched vias.
  • Step 10 Patterning the top electrode, piezoelectric layer, and ground vias using plasma etching: First, 500nm of silicon dioxide is deposited as a hard mask using plasma vapor deposition, followed by wet etching of silicon dioxide and etching of aluminum nitride using chlorine-based plasma; then wet etching in developer MF-319 to pattern the ground vias.
  • the top electrode is designed to have an average radius of 70% (relative to the released diaphragm) and an axial diaphragm coverage of 55%, because preliminary results using finite element analysis indicate that this allows good coupling to the fundamental vibration mode of the diaphragm.
  • Step 11 Deposit silicon nitride as an insulating layer on the surface of the device described in step 10, lead out the upper electrode and perform polymer coating.
  • the multi-frequency piezoelectric micromechanical ultrasonic transducer based on the Helmholtz resonator proposed in the present invention can obtain different resonant frequencies by changing the size of the Helmholtz cavity and the neck without changing the size of the piezoelectric film.
  • Figures 5-7 show the surface sound pressure of the transducer under the conditions of changing the neck length, neck width, and cavity height of the Helmholtz resonant cavity using finite element analysis software.
  • Figure 5 is a frequency response diagram of the surface average pressure when the neck length changes from 30um to 70um
  • Figure 6 is a frequency response diagram of the surface average pressure when the neck width changes from 50um to 100um
  • Figure 7 is a frequency response diagram of the surface average pressure when the neck height changes from 5um to 40um.
  • a preferred parameter of the structure of the present invention is as follows: the neck length of the Helmholtz resonant cavity is 50 ⁇ m, the neck width is 80 ⁇ m, and the cavity height is 4 ⁇ m.
  • FIG. 8 is a schematic diagram of the emission bandwidth of the device in air. Both PMUTs are driven by a 100V, 1.8MHz electrical pulse signal. The duration of the pulse signal is 120ns. The pulse is temporally variable by convolution using the same Blackman window.
  • the conventional PMUT has a sharp resonance peak curve with a bandwidth of only 5%, about 0.1MHz, and a center frequency of 1.82MHz.
  • the structure of the present invention forms an ultra-wide frequency band because the excitation modes are merged together.
  • the -6dB bandwidth can be up to Reach 77% (1.4MHz), the center frequency is 1.82MHz (77%).
  • the present invention combines the Helmholtz resonant cavity with the piezoelectric film to achieve multiple resonant frequencies, and obtains an increase in bandwidth and a significant enhancement in the emitted sound pressure through a coupling effect.

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  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

一种多频压电微机械超声换能器及制备方法，涉及换能器领域，换能器包括：依次设置的顶电极层（1）、压电层（2）、底电极层（3）、绝缘层（4）、结构层（5）和基体（6）；所述基体（6）上设置两个亥姆霍兹谐振腔（7）；两个亥姆霍兹谐振腔（7）通过颈部通道连通；所述结构层（5）覆盖所述颈部通道和两个所述亥姆霍兹谐振腔（7）。该多频压电微机械超声换能器将亥姆霍兹谐振腔（7）与压电薄膜结合，能够实现换能器的多个谐振频率。

Description

一种多频压电微机械超声换能器及制备方法
本申请要求于2022年10月14日提交中国专利局、申请号为202211261404.7、发明名称为“一种多频压电微机械超声换能器及制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及换能器领域，特别是涉及一种多频压电微机械超声换能器及制备方法。
背景技术
传统的以块状压电陶瓷为材料的超声换能器只工作在一阶谐振处，这导致它们通过切换探头或者制作成包含多个单品换能器的组合结构来实现工作频率的切换，大大增加了生产制造上的复杂度、降低了波束合成的效果。与此同时，传统块状压电陶瓷材料具有与组织声阻抗匹配度差、加工阵列昂贵的缺点。近年来，随着微机电系统(MEMS)技术的发展，微机械换能器(MUTs)能够在一个振动膜片上激发出多个工作频率，同时MUTs的柔顺膜结构具有较低的声阻抗，能够实现与介质的良好耦合并且易于制造设计紧凑的大型阵列。根据工作原理，MUTs一般分为电容式微机械超声波换能器(CMUT)和压电微机械超声波换能器(PMUT)两类。相对于CMUT，PMUT不需要高压偏置源，也不用留置电容间隙。目前基于氮化铝薄膜的压电微机械换能器是研究前沿，目前存在一些具有多个工作频率的PMUT器件，但是大多侧重于机械域与电学域方面，比如改变振动膜片的形状、优化电极配置，很少有考虑在声学域中利用膜片与介质之间的耦合效应来实现多频振动。
发明内容
本发明的目的是提供一种多频压电微机械超声换能器及制备方法，将亥姆霍兹谐振腔与压电薄膜结合，实现换能器的多个谐振频率。
为实现上述目的，本发明提供了如下方案：
一种多频压电微机械超声换能器，包括：依次设置的顶电极层、压电层、底电极层、绝缘层、结构层和基体；
所述基体上设置两个亥姆霍兹谐振腔；两个亥姆霍兹谐振腔通过颈部 通道连通；所述结构层覆盖所述颈部通道和两个所述亥姆霍兹谐振腔。
可选地，两个所述亥姆霍兹谐振腔均为长方体腔体。
可选地，所述顶电极层、所述压电层、所述底电极层和所述绝缘层均设有两组；每组依次设置的顶电极层、所述压电层、所述底电极层和所述绝缘层均对应一个亥姆霍兹谐振腔。
可选地，所述压电层的材料为氮化铝。
可选地，所述结构层的材料为硅。
可选地，所述绝缘层的材料为二氧化硅。
本发明还提供一种多频压电微机械超声换能器制备方法，所述多频压电微机械超声换能器制备方法用于制备上述所述的多频压电微机械超声换能器，所述多频压电微机械超声换能器制备方法包括：
在基体上刻蚀两个亥姆霍兹谐振腔并在两个所述亥姆霍兹谐振腔之间刻蚀连通的颈部通道；
对刻蚀后的基体利用气相沉积法制备结构层；
利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层；
利用等离子刻蚀法对所述压电层和所述顶电极层进行刻蚀；
在所述底电极层表面沉积绝缘层，得到多频压电微机械超声换能器。
可选地，所述对刻蚀后的基体利用气相沉积法制备结构层，具体包括：
对所述刻蚀后的基体利用湿法氧化硅层；
利用气相沉积法在氧化的硅层上制备多晶硅作为牺牲层并对所述牺牲层进行表面抛光；
利用气相沉积法在表面抛光后的牺牲层上制备结构层并对所述结构层进行表面抛光。
可选地，在所述利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层之后，还包括：
利用干法刻蚀通孔至所述牺牲层；
利用二氟化氙溶液刻蚀所述牺牲层至所述压电层，得到与所述颈部通道结合的背空腔结构；
填充所述通孔。
根据本发明提供的具体实施例，本发明公开了以下技术效果：
本发明包括：依次设置的顶电极层、压电层、底电极层、绝缘层、结构层和基体；所述基体上设置两个亥姆霍兹谐振腔；两个亥姆霍兹谐振腔通过颈部通道连通；所述结构层覆盖所述颈部通道和两个所述亥姆霍兹谐振腔。本发明将亥姆霍兹谐振腔与压电薄膜结合，实现换能器的多个谐振频率。
说明书附图
图1为本发明提供的多频压电微机械超声换能器结构示意图；
图2为两个传统的相邻方形PMUT的结构图；
图3为将相邻两个PMUT空腔通过颈部通道连接在一起的结构图；
图4为等效电路示意图；
图5为颈部长度从30um到70um变化时表面平均压力的频率响应图；
图6为颈部宽度从50um到100um变化时表面平均压力的频率响应图；
图7为颈部高度从5um到40um变化时表面平均压力的频率响应图；
图8为空气中器件的发射带宽示意图。
符号说明：
1-顶电极层，2-压电层，3-底电极层，4-绝缘层，5-结构层，6-基体，
7-亥姆霍兹谐振腔，8-方型PMUT。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的目的是提供多频压电微机械超声换能器及制备方法，提供一种将亥姆霍兹谐振腔与压电薄膜结合，实现换能器的多个谐振频率。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
如图1-图3所示，本发明提供的一种多频压电微机械超声换能器，包括：依次设置的顶电极层1、压电层2、底电极层3、绝缘层4、结构层5和基体6。
所述基体6上设置两个亥姆霍兹谐振腔7；两个亥姆霍兹谐振腔7通过颈部通道连通；所述结构层5覆盖所述颈部通道和两个所述亥姆霍兹谐振腔7。
其中，两个所述亥姆霍兹谐振腔7均为长方体腔体。所述顶电极层1、所述压电层2、所述底电极层3和所述绝缘层4均设有两组；每组依次设置的顶电极层1、所述压电层2、所述底电极层3和所述绝缘层4均对应一个亥姆霍兹谐振腔7。所述压电层2的材料为氮化铝。所述结构层5的材料为硅。所述绝缘层4的材料为二氧化硅。
本发明提出的多频压电微机械超声换能器是将两个相邻的PMUT单元的背空腔通过一个窄通道连接在一起，从而形成了一种“体腔-颈部-体腔”的串联型亥姆霍兹(Helmholtz)谐振腔，如图1所示。
整个器件包括夹在结构层5上的顶部和底部电极间的压电薄膜三明治结构的传统的方型PMUT8。电极层用于接收外部激励电压；压电层2由压电材料氮化铝构成的，用于进行机电能量的转换；结构层5硅作为支撑层，增加了器件的稳定性，而绝缘层4使用二氧化硅作为底电极层3与结构层5之间的绝缘材料。当有电压施加到电极层上时，d31压电效应产生的弯曲力矩使膜片发生偏转，进而驱动串联的亥姆霍兹谐振腔7内空气的振动，腔内的压力又会反作用到膜片上，从而对发射声压产生影响。图2中的a0为顶电极直径；h1为压电层厚度；h2为结构层厚度，图3中的a1为空腔直径；t为空腔高度；tn为颈部腔体的高度；wn为颈部腔体的宽度。
多频PMUT器件的等效电路模型如图4所示，在声学域部分因为谐振腔的引入增加了声阻。图4中的u为机械域的速度，U为声学域的速度。其中，PMUT单元由电压Vin驱动，C0为馈通电容，机电耦合由转动比η定义。Mm、Cm、Rm分别为PMUT单元的质量、电容与机械阻尼。 从机械域到声学域，通过表面积Aeff进行耦合。方形夹持的PMUT在声学域的自由辐射阻抗Zfree为：其中ρ0，c0分别为介质密度与声速，Rfree，Xfree分别为自由辐射电阻与自由辐射电抗，j为虚数。
相串联的亥姆霍兹谐振腔7的声阻抗Zha为： 其中，ω为角频率，Mha为声质量，Cha,1为左边空腔的声电容，Cha,2为右边空腔的声电容，腔体作为电容器具有声电容 颈部作为电感器以声学质量Mha表示，ln为颈部腔体的长度，同时亥姆霍兹腔具有声电阻其中V1，V2分别为左右两个谐振体腔的体积，S1为谐振腔的截面积，k为波数。
两个相邻PMUT阵元之间的互辐射阻抗Zpp表示为： d为相邻两个PMUT阵元之间的间距。
可以通过MEMS制作工艺制备此器件，以实现多个工作频率与发射性能的提高。
本发明还提供一种多频压电微机械超声换能器制备方法，所述多频压电微机械超声换能器制备方法用于制备上述所述的多频压电微机械超声换能器，所述多频压电微机械超声换能器制备方法包括：
在基体上刻蚀两个亥姆霍兹谐振腔并在两个所述亥姆霍兹谐振腔之间刻蚀连通的颈部通道。
对刻蚀后的基体利用气相沉积法制备结构层。
利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层。
利用等离子刻蚀法对所述压电层和所述顶电极层进行刻蚀。
在所述底电极层表面沉积绝缘层，得到多频压电微机械超声换能器。
在实际应用中，所述对刻蚀后的基体利用气相沉积法制备结构层，具 体包括：
对所述刻蚀后的基体利用湿法氧化硅层。
利用气相沉积法在氧化的硅层上制备多晶硅作为牺牲层并对所述牺牲层进行表面抛光。
利用气相沉积法在表面抛光后的牺牲层上制备结构层并对所述结构层进行表面抛光。
在实际应用中，在所述利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层之后，还包括：
利用干法刻蚀通孔至所述牺牲层。
利用二氟化氙溶液刻蚀所述牺牲层至所述压电层，得到与所述颈部通道结合的背空腔结构。
填充所述通孔。
本发明还提供一种多频压电微机械超声换能器制备方法在实际应用中的具体工作流程：
步骤1：在500nm深埋氧化物上制备了3μm厚的SOI衬底作为基体晶圆材料，并使用标准硅片清洗工艺对其进行清洁。
步骤2：在上述晶圆表面刻蚀4μm深度、180μm长度的亥姆霍兹体腔，并在相邻两个体腔中刻蚀50μm宽度、80μm长度的亥姆霍兹颈部通道。
步骤3：对步骤2的器件使用湿法热氧化硅层。
步骤4：使用低温等离子体增强化学的气相沉积法制备多晶硅作为牺牲层，并进行表面抛光工艺。
步骤5：使用等离子体增强化学的气相沉积法制备的300nm二氧化硅作为支撑层，并进行表面抛光。
步骤6：通过磁控溅射工艺在步骤5的器件上生长厚度为200nm的钼底部电极，在底电极上磁控溅射1.8μm氮化铝(使用002取向的晶体)作为压电层，然后在压电层上磁控溅射200nm钼作为顶部电极层。
步骤7：干法刻蚀通孔至多晶硅牺牲层。
步骤8：使用二氟化氙溶液刻蚀牺牲层，从而释放压电层并形成空腔与亥姆霍兹颈部结合的背空腔结构。
步骤9：填充刻蚀通孔。
步骤10：使用等离子刻蚀法对顶部电极、压电层与接地通孔进行图案化：首先使用等离子气相沉积法沉积500nm的二氧化硅作为硬掩模，然后对二氧化硅进行湿法刻蚀，并使用氯基等离子对氮化铝进行刻蚀；接着在显影液MF-319中进行湿刻蚀，对接地通孔进行图案化。顶部电极设计为具有70％的平均半径(相对于释放的膜片)，轴向膜片覆盖面积率为55％，因为使用有限元分析得到的初步结果表明这种情况下能够实现与膜片的基本振动模态良好的耦合。
步骤11：在步骤10所述的器件表面沉积氮化硅作为绝缘层，引出上电极并进行高分子镀膜。
本发明提供的多频压电微机械超声换能器具有以下优势：
1.易于调整共振频率。
本发明提出的基于亥姆霍兹谐振器的多频压电微机械超声换能器，在不改变压电薄膜尺寸的情况下，可以通过改变亥姆霍兹腔体与颈部的尺寸获取不同的谐振频率。图5-图7是利用有限元分析软件，在更改亥姆霍兹谐振腔的颈部长度、颈部宽度、腔高条件下，换能器表面声压的情况。图5为颈部长度从30um到70um变化时表面平均压力的频率响应图，图6为颈部宽度从50um到100um变化时表面平均压力的频率响应图，图7为颈部高度从5um到40um变化时表面平均压力的频率响应图，可以看到亥姆霍兹谐振腔的引入产生了额外的两个谐振峰，并且谐振出现的位置与谐振处的声压值与几何尺寸息息相关。本发明结构的一个优选参数如下：亥姆霍兹谐振腔的颈部长度为50μm，颈部宽度为80μm，腔体高度为4μm。
2.发射性能提高。
为了评估在空气中工作的器件的传输模式脉冲响应和性能，对本发明的器件进行了瞬态分析，并与同尺寸传统的无谐振腔PMUT进行对比。图8为空气中器件的发射带宽示意图。两个PMUT均由100V、1.8MHz电脉冲信号驱动。脉冲信号的持续时间为120ns。脉冲通过使用相同的Blackman窗口进行卷积在时间上变。传统的PMUT有一个尖锐的共振峰值曲线，带宽只有5％，约为0.1MHz，中心频率为1.82MHz。本发明的结构由于激发模式合并在一起，形成了超宽的频带。-6dB带宽最大可以 达到77％(1.4MHz)，中心频率为1.82MHz(77％)。
本发明将亥姆霍兹谐振腔与压电薄膜结合在一起，实现了多个谐振频率，并通过耦合效应获得带宽的增加与发射声压的大幅度增强。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处。综上所述，本说明书内容不应理解为对本发明的限制。

Claims (9)

  1. 一种多频压电微机械超声换能器，其特征在于，包括：依次设置的顶电极层、压电层、底电极层、绝缘层、结构层和基体；
    所述基体上设置两个亥姆霍兹谐振腔；两个亥姆霍兹谐振腔通过颈部通道连通；所述结构层覆盖所述颈部通道和两个所述亥姆霍兹谐振腔。
  2. 根据权利要求1所述的多频压电微机械超声换能器，其特征在于，两个所述亥姆霍兹谐振腔均为长方体腔体。
  3. 根据权利要求1所述的多频压电微机械超声换能器，其特征在于，所述顶电极层、所述压电层、所述底电极层和所述绝缘层均设有两组；每组依次设置的顶电极层、所述压电层、所述底电极层和所述绝缘层均对应一个亥姆霍兹谐振腔。
  4. 根据权利要求1所述的多频压电微机械超声换能器，其特征在于，所述压电层的材料为氮化铝。
  5. 根据权利要求1所述的多频压电微机械超声换能器，其特征在于，所述结构层的材料为硅。
  6. 根据权利要求1所述的多频压电微机械超声换能器，其特征在于，所述绝缘层的材料为二氧化硅。
  7. 一种多频压电微机械超声换能器制备方法，其特征在于，所述多频压电微机械超声换能器制备方法用于制备权利要求1-6任意一项所述的多频压电微机械超声换能器，所述多频压电微机械超声换能器制备方法包括：
    在基体上刻蚀两个亥姆霍兹谐振腔并在两个所述亥姆霍兹谐振腔之间刻蚀连通的颈部通道；
    对刻蚀后的基体利用气相沉积法制备结构层；
    利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层；
    利用等离子刻蚀法对所述压电层和所述顶电极层进行刻蚀；
    在所述底电极层表面沉积绝缘层，得到多频压电微机械超声换能器。
  8. 根据权利要求7所述的多频压电微机械超声换能器制备方法，其特 征在于，所述对刻蚀后的基体利用气相沉积法制备结构层，具体包括：
    对所述刻蚀后的基体利用湿法氧化硅层；
    利用气相沉积法在氧化的硅层上制备多晶硅作为牺牲层并对所述牺牲层进行表面抛光；
    利用气相沉积法在表面抛光后的牺牲层上制备结构层并对所述结构层进行表面抛光。
  9. 根据权利要求8所述的多频压电微机械超声换能器制备方法，其特征在于，在所述利用磁控溅射工艺在所述结构层上依次生长底电极层、压电层和顶电极层之后，还包括：
    利用干法刻蚀通孔至所述牺牲层；
    利用二氟化氙溶液刻蚀所述牺牲层至所述压电层，得到与所述颈部通道结合的背空腔结构；
    填充所述通孔。
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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115532572B (zh) * 2022-10-14 2024-05-07 浙江大学 一种多频压电微机械超声换能器及制备方法
CN117750285B (zh) * 2024-02-07 2024-05-07 山东博华电子科技发展有限公司 微型压电换能器的制备方法及微型压电换能器

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326094A (zh) * 2013-05-24 2013-09-25 华为技术有限公司 波导滤波器、其制备方法及通信设备
CN110681559A (zh) * 2019-09-10 2020-01-14 武汉大学 具有亥姆霍兹谐振腔的mems压电超声换能器
CN111050255A (zh) * 2019-12-28 2020-04-21 陕西师范大学 一种工作频率可调的接收换能器
CN111786594A (zh) * 2020-07-09 2020-10-16 南京邮电大学 基于亥姆霍兹谐振腔的球形超声能量收集器
CN111884647A (zh) * 2020-08-13 2020-11-03 中国工程物理研究院电子工程研究所 一种压电微机械声波换能器阵列耦合隔离方法
US20210178430A1 (en) * 2019-12-13 2021-06-17 Stmicroelectronics S.R.L. Micro-machined ultrasonic transducer including a tunable helmoltz resonator
CN113540723A (zh) * 2021-09-16 2021-10-22 江苏大学 一种调频双频带亚波长声信号滤波器件
WO2022017486A1 (zh) * 2020-07-24 2022-01-27 苏州汉天下电子有限公司 可调式谐振器及其制造方法
CN114950926A (zh) * 2022-06-24 2022-08-30 江苏英特神斯科技有限公司 一种压电微机械超声换能器阵列及其制造方法
CN115156017A (zh) * 2022-07-01 2022-10-11 复旦大学 一种半固定的微机械超声换能器
CN115532572A (zh) * 2022-10-14 2022-12-30 浙江大学 一种多频压电微机械超声换能器及制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1418425B1 (en) * 2002-11-05 2009-11-25 Hok Instrument AB Gas content microsensor
US8418804B1 (en) * 2011-12-20 2013-04-16 King Fahd University Of Petroleum And Minerals Multiple Helmholtz resonators
EP3383556B1 (en) * 2015-12-01 2023-08-02 InvenSense, Inc. Miniature ultrasonic transducer package
US10397693B1 (en) * 2018-03-09 2019-08-27 Apple Inc. Acoustic chambers damped with plural resonant chambers, and related systems and methods
CN110560352B (zh) * 2019-08-15 2021-04-02 武汉大学 基于Helmholtz共振腔的可调频超声传感器阵列
CN110681560B (zh) * 2019-09-10 2020-11-03 武汉大学 具有亥姆霍兹谐振腔的mems超声定位传感器
CN111001553B (zh) * 2019-12-18 2021-01-26 武汉大学 一种可调谐的超声传感器阵列
CN218679383U (zh) * 2020-06-30 2023-03-21 瑞声声学科技(深圳)有限公司 振动传感器

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103326094A (zh) * 2013-05-24 2013-09-25 华为技术有限公司 波导滤波器、其制备方法及通信设备
CN110681559A (zh) * 2019-09-10 2020-01-14 武汉大学 具有亥姆霍兹谐振腔的mems压电超声换能器
US20210178430A1 (en) * 2019-12-13 2021-06-17 Stmicroelectronics S.R.L. Micro-machined ultrasonic transducer including a tunable helmoltz resonator
CN111050255A (zh) * 2019-12-28 2020-04-21 陕西师范大学 一种工作频率可调的接收换能器
CN111786594A (zh) * 2020-07-09 2020-10-16 南京邮电大学 基于亥姆霍兹谐振腔的球形超声能量收集器
WO2022017486A1 (zh) * 2020-07-24 2022-01-27 苏州汉天下电子有限公司 可调式谐振器及其制造方法
CN111884647A (zh) * 2020-08-13 2020-11-03 中国工程物理研究院电子工程研究所 一种压电微机械声波换能器阵列耦合隔离方法
CN113540723A (zh) * 2021-09-16 2021-10-22 江苏大学 一种调频双频带亚波长声信号滤波器件
CN114950926A (zh) * 2022-06-24 2022-08-30 江苏英特神斯科技有限公司 一种压电微机械超声换能器阵列及其制造方法
CN115156017A (zh) * 2022-07-01 2022-10-11 复旦大学 一种半固定的微机械超声换能器
CN115532572A (zh) * 2022-10-14 2022-12-30 浙江大学 一种多频压电微机械超声换能器及制备方法

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