Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/345—Silicon nitride
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
  • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
  • C23C16/45542—Plasma being used non-continuously during the ALD reactions
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/56—After-treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
  • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
  • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour

Definitions

• This disclosure relates to a substrate processing method, a semiconductor device manufacturing method, a substrate processing apparatus, and a program.
• One method is to form a film on a substrate using active species, as described in Patent Document 1. This can improve the film density and impurities in the film, but it has the disadvantage that the active species do not spread across the entire substrate, resulting in poor in-plane uniformity of the film thickness.
• This disclosure provides technology that can improve the in-plane uniformity of the film thickness of a substrate.
• a technology that includes a film formation process in which a film is formed on a substrate in a processing chamber, and a modification process in which the film is modified in the processing chamber, and that makes the amount of gas exhausted from the processing chamber in the modification process greater than the amount of gas exhausted from the processing chamber in the film formation process.
• This disclosure makes it possible to improve the in-plane uniformity of the film thickness of the substrate.
• FIG. 1 is a schematic configuration diagram illustrating a substrate processing apparatus according to an embodiment of the present disclosure.
• 2 is a cross-sectional view of the substrate processing apparatus according to the embodiment of the present disclosure taken along line AA in FIG. 1.
• FIG. 2 is a block diagram for explaining a controller provided in the substrate processing apparatus according to an embodiment of the present disclosure.
• 4 is a diagram showing a film formation sequence of a manufacturing method of a semiconductor device according to an embodiment of the present disclosure. 4 is a diagram showing operation timings of each part in a film formation sequence of the semiconductor device manufacturing method according to the embodiment of the present disclosure.
• FIG. 2 is a diagram showing a configuration of an exhaust system according to an embodiment of the present disclosure.
• FIG. 2 is a diagram showing a configuration of an exhaust system according to an embodiment of the present disclosure.
• the substrate processing apparatus 100 has a processing furnace 202, and a heater 207 serving as a heating means (heating mechanism) is disposed in the processing furnace 202.
• the heater 207 has a cylindrical shape, and is installed vertically by being supported by a heater base (not shown) serving as a holding plate.
• a reaction tube 203 is disposed concentrically with the heater 207 inside the heater 207.
• the reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC) and is formed in a cylindrical shape with a closed upper end and an open lower end.
• a manifold (inlet flange) 209 is disposed concentrically with the reaction tube 203 below the reaction tube 203.
• the manifold 209 is made of a metal such as stainless steel (SUS) and is formed in a cylindrical shape with open upper and lower ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 and is configured to support the reaction tube 203.
• An O-ring 220a is provided between the manifold 209 and the reaction tube 203 as a sealing member.
• the manifold 209 is supported by a heater base, so that the reaction tube 203 is installed vertically.
• a processing chamber 201 is formed in the cylindrical hollow portion of the reaction tube 203.
• the processing chamber 201 is configured to be capable of accommodating multiple substrates, i.e., wafers 200, arranged vertically in multiple stages in a horizontal position using a boat 217, which will be described later.
• Nozzles 249a (first nozzle) and 249b (second nozzle) extending in the vertical direction are provided in the processing chamber 201 so as to penetrate the side wall of the manifold 209.
• Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. This makes it possible to supply multiple types of gas, two types in this case, into the processing chamber 201.
• Gas supply pipes 232a, 232b are provided with mass flow controllers (MFCs) 241a, 241b, which are flow rate controllers (flow rate control parts), and valves 243a, 243b, which are on-off valves, in order from the upstream direction.
• MFCs mass flow controllers
• Gas supply pipes 232c, 232d which supply inert gas, are connected to gas supply pipes 232a, 232b downstream of valves 243a, 243b.
• Gas supply pipes 232c, 232d are provided with MFCs 241c, 241d, which are flow rate controllers (flow rate control parts), and valves 243c, 243d, which are on-off valves, in order from the upstream direction.
• a reservoir (tank) 280 for storing raw material gas and a valve 265 are provided downstream of the connection part to which gas supply pipe 232c is connected in gas supply pipe 232a. Further, downstream of valve 265 in gas supply pipe 232a, gas supply pipe 232e branching off from gas supply pipe 232c is connected. Further, in gas supply pipe 232e, MFC 241e, which is a flow rate controller (flow rate control part), and valve 243e, which is an opening/closing valve, are provided in this order from the upstream side.
• Nozzle 249a is connected to the tip of gas supply pipe 232a. As shown in FIG. 2, nozzle 249a is provided in the annular space between the inner wall of reaction tube 203 and wafers 200, along the inner wall of reaction tube 203 from the bottom to the top, rising upward in the loading direction (vertical direction) of wafers 200. In other words, nozzle 249a is provided to the side of the wafer arrangement area where wafers 200 are arranged.
• the nozzle 249a is configured as an L-shaped long nozzle, with its horizontal portion penetrating the side wall of the manifold 209 and its vertical portion rising from at least one end of the wafer arrangement area toward the other end.
• Gas supply holes 250a for supplying gas are provided on the side of the nozzle 249a.
• the gas supply holes 250a open toward the center of the reaction tube 203, making it possible to supply gas toward the wafers 200.
• a plurality of gas supply holes 250a are provided from the bottom to the top of the reaction tube 203, each having the same opening area and arranged at the same opening pitch.
• the shape of the nozzle 249a is not particularly limited, and for example, the horizontal and vertical portions may be separate.
• Nozzle 249b is connected to the tip of gas supply pipe 232b.
• Nozzle 249b is provided in buffer chamber 237, which is a gas dispersion space.
• buffer chamber 237 is provided in the annular space between the inner wall of reaction tube 203 and wafers 200, and in a portion extending from the lower part to the upper part of processing chamber 201 along the loading direction of wafers 200.
• buffer chamber 237 is provided in an area to the side of the wafer arrangement area, horizontally surrounding the wafer arrangement area.
• Gas supply holes 250c for supplying gas are provided at the end of the wall of the buffer chamber 237 adjacent to the wafer 200.
• the gas supply holes 250c are open toward the center of the reaction tube 203, making it possible to supply gas toward the wafer 200.
• a plurality of gas supply holes 250c are provided from the bottom to the top of the reaction tube 203, each having the same opening area, and further provided at the same opening pitch.
• the nozzle 249b is provided at the end opposite to the end where the gas supply hole 250c of the buffer chamber 237 is provided, along the inner wall of the reaction tube 203 from the bottom to the top, rising upward in the stacking (arrangement) direction of the wafers 200. That is, the nozzle 249b is provided on the side of the wafer arrangement area where the wafers 200 are arranged.
• the nozzle 249b is configured as an L-shaped long nozzle, and its horizontal part is provided to penetrate the side wall of the manifold 209, and its vertical part is provided to rise at least from one end side to the other end side of the wafer arrangement area.
• the side of the nozzle 249b is provided with a gas supply hole 250b for supplying gas.
• the gas supply hole 250b opens to face the center of the buffer chamber 237. Similar to the gas supply hole 250c, a plurality of gas supply holes 250b are provided from the bottom to the top of the reaction tube 203. Like nozzle 249a, the shape of nozzle 249b is not limited; for example, the horizontal and vertical parts may be separate.
• each of the gas supply holes 250b By adjusting the opening area and opening pitch of each of the gas supply holes 250b from the upstream side to the downstream side as described above, it is possible to eject gas from each of the gas supply holes 250b at approximately the same flow rate, although there is a difference in flow rate. Then, by temporarily introducing the gas ejected from each of the multiple gas supply holes 250b into the buffer chamber 237, it is possible to equalize the difference in gas flow rate within the buffer chamber 237.
• gas is transported via nozzles 249a, 249b and buffer chamber 237 arranged within a circular, vertically elongated space defined by the inner wall of reaction tube 203 and the ends of the multiple wafers 200 loaded thereon, i.e., within a cylindrical space.
• gas is first ejected into the processing chamber 201 near the wafer 200 from the gas supply holes 250a-250c that are respectively opened in the nozzles 249a, 249b and the buffer chamber 237.
• the main flow of gas in the processing chamber 201 is parallel to the surface of the wafer 200, that is, horizontal. With this configuration, gas is uniformly supplied to each wafer 200, and it is possible to improve the uniformity of the thickness of the film formed on each wafer 200.
• the gas that has flowed over the surface of the wafer 200, that is, the residual gas after the reaction flows toward the exhaust port, that is, the second exhaust line 231 described later.
• the direction of the flow of this residual gas is appropriately specified depending on the position of the exhaust port, and is not limited to the vertical direction.
• the raw material gas is supplied from the gas supply pipe 232a to the processing chamber 201 via the MFC 241a, the valve 243a, the gas supply pipe 232a, the storage section 280, the valve 265, and the nozzle 249a, as shown in FIG. 1.
• raw material gas refers to a raw material in a gaseous state, such as a gas obtained by vaporizing a raw material that is in a liquid state at room temperature and pressure, or a raw material that is in a gaseous state at room temperature and pressure.
• raw material can mean “liquid raw material in a liquid state”, “raw material gas in a gaseous state”, or both.
• Reactive gas is supplied from gas supply pipe 232b to the processing chamber 201 via MFC 241b, valve 243b, gas supply pipe 232b, nozzle 249b, and buffer chamber 237.
• nitrogen (N 2 ) gas is supplied as an inert gas from the gas supply pipe 232c to the processing chamber 201 via the MFC 241c, the valve 243c, the reservoir 280, the valve 265, and the gas supply pipe 232a.
• nitrogen (N 2 ) gas is supplied as an inert gas from the gas supply pipe 232e to the processing chamber 201 via the MFC 241e, the valve 243e, and the gas supply pipe 232a.
• nitrogen (N 2 ) gas is supplied as an inert gas from the gas supply pipe 232 d through the MFC 241 d , the valve 243 d , the gas supply pipe 232 b , and the buffer chamber 237 to the processing chamber 201 .
• a raw material gas supply system (raw material gas line) that supplies raw materials containing a specified element is mainly composed of the gas supply pipe 232a, the MFC 241a, the valve 243a, the storage section 280, and the valve 265.
• the gas supply pipe 232b, the MFC 241b, and the valve 243b mainly constitute a reaction gas supply system (reaction gas line) that supplies reaction gas.
• the inert gas supply system is mainly composed of gas supply pipes 232c, 232d, and 232e, MFCs 241c, 241d, and 241e, and valves 243c, 243d, and 243e.
• two rod-shaped electrodes 269, 270 made of a conductor and having an elongated structure are arranged from the bottom to the top of the reaction tube 203 along the stacking direction of the wafers 200.
• Each of the rod-shaped electrodes 269, 270 is provided parallel to the nozzle 249b.
• Each of the rod-shaped electrodes 269, 270 is protected by being covered from the top to the bottom by an electrode protection tube 275.
• One of the rod-shaped electrodes 269, 270 is connected to a high-frequency power source 273 via a matcher 272, and the other is connected to earth, which is a reference potential.
• the rod-shaped electrodes 269, 270 and the electrode protection tube 275 mainly constitute a plasma source as a plasma generator (plasma generation unit).
• the plasma source functions as an activator (exciter) that activates (excites) the gas into a plasma state, as described below.
• a first exhaust line 230 as a bypass exhaust line and a second exhaust line 231 as a main exhaust line are provided as exhaust pipes for exhausting the atmosphere of the processing chamber 201.
• the second exhaust line 231 as an exhaust pipe for exhausting the atmosphere of the processing chamber 201 is connected to the reaction tube 203.
• One end of the second exhaust line 231 is connected to an exhaust port at the lower end of the processing chamber 201.
• a vacuum pump 246 as an exhaust device is connected to the second exhaust line 231 via a pressure sensor 245 as a pressure detector (pressure detection unit) that detects the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 242 as an opening and closing valve (pressure adjustment unit).
• the APC valve 242 is a valve that can evacuate and stop evacuation of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating, and is further configured to adjust the pressure in the processing chamber 201 by adjusting the valve opening based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating.
• the second exhaust line 231 is provided with a first exhaust line 230 that branches off upstream of the APC valve 242 and joins downstream of the APC valve 242.
• the flow path cross-sectional area of the first exhaust line 230 is configured to be smaller than the flow path cross-sectional area of the second exhaust line 231.
• the exhaust volume of the second exhaust line 231 is configured to be larger than the exhaust volume of the first exhaust line 230.
• the exhaust volume (exhaust capacity) of the second exhaust line 231 is configured to be larger than the exhaust volume (exhaust capacity) of the first exhaust line 230. Therefore, the exhaust volume (exhaust capacity) of each exhaust line can be adjusted by making the performance of the vacuum pump 246 different.
• the first exhaust line 230 is provided with an APC (Auto Pressure Controller) valve 244 as an opening and closing valve (pressure adjustment unit).
• the exhaust system is mainly composed of the first exhaust line 230, the second exhaust line 231, the APC valves 242 and 244, and the pressure sensor 245.
• the vacuum pump 246 may also be included in the exhaust system.
• a seal cap 219 is provided below the manifold 209 as a furnace port cover that can airtightly close the lower end opening of the manifold 209.
• the seal cap 219 is configured to abut against the lower end of the manifold 209 from below in the vertical direction.
• the seal cap 219 is made of a metal such as SUS and is formed in a disk shape.
• An O-ring 220b is provided on the upper surface of the seal cap 219 as a sealing member that abuts against the lower end of the manifold 209.
• a rotation mechanism 267 that rotates the boat 217 (described later) is installed on the opposite side of the seal cap 219 from the processing chamber 201.
• the rotation shaft 255 of the rotation mechanism 267 is connected to the boat 217 through the seal cap 219.
• the rotation mechanism 267 is configured to rotate the wafers 200 by rotating the boat 217.
• the seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115 as a lifting mechanism that is installed vertically outside the reaction tube 203.
• the boat elevator 115 is configured to move the boat 217 in and out of the processing chamber 201 by raising and lowering the seal cap 219.
• the boat elevator 115 is configured as a transport device (transport mechanism) that transports the boat 217 and the wafers 200 supported by the boat 217 in and out of the processing chamber 201.
• the boat 217 as a substrate support is configured to support multiple wafers 200, for example 25 to 200, in a horizontal position and aligned vertically with their centers aligned in multiple stages; in other words, the boat 217 is configured to arrange the wafers 200 at intervals.
• the boat 217 is made of a heat-resistant material such as quartz or SiC.
• a heat insulating member 218 made of a heat-resistant material such as quartz or SiC is provided at the bottom of the boat 217.
• the processing chamber 201 is provided with a temperature sensor 263 as a temperature detector.
• the temperature of the processing chamber 201 is configured to have a desired temperature distribution by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263.
• the temperature sensor 263 is configured in an L-shape like the nozzles 249a and 249b, and is provided along the inner wall of the reaction tube 203.
• the controller 121 which is a control unit (control means), is configured as a computer equipped with a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I/O port 121d.
• the RAM 121b, the storage device 121c, and the I/O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e.
• An input/output device 122 configured as, for example, a touch panel, etc. is connected to the controller 121.
• the storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc.
• a control program for controlling the operation of the substrate processing apparatus, and a process recipe describing the procedures and conditions for substrate processing such as film formation, which will be described later, are readably stored in the storage device 121c.
• the process recipe is a combination of procedures in substrate processing steps such as the film formation step, which will be described later, that are executed by the controller 121 to obtain a predetermined result, and functions as a program.
• the process recipe, control program, etc. will be collectively referred to simply as the program.
• the I/O port 121d is connected to the aforementioned MFCs 241a to 241e, valves 243a to 243e, 265, pressure sensor 245, APC valves 242, 244, vacuum pump 246, temperature sensor 263, heater 207, rotation mechanism 267, boat elevator 115, matching box 272, high frequency power supply 273, etc.
• the CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to input of an operation command from the input/output device 122, etc.
• the CPU 121a is configured to control the flow rate adjustment of various gases by the MFCs 24a to 241e, the opening and closing of the valves 243a to 243e, 265, the opening and closing of the APC valves 242, 244 and the pressure adjustment by the APC valves 242, 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment of the heater 207 based on the temperature sensor 263, the rotation and rotation speed adjustment of the boat 217 by the rotation mechanism 267, the raising and lowering of the boat 217 by the boat elevator 115, the impedance adjustment by the matching device 272, the power supply of the high frequency power source 273, etc.
• the controller 121 may be configured as a general-purpose computer, not limited to a dedicated computer.
• the controller 121 of this embodiment can be configured by preparing an external storage device (e.g., a magnetic tape, a magnetic disk such as a flexible disk or a hard disk, an optical disk such as a CD or a DVD, an optical magnetic disk such as an MO, or a semiconductor memory such as a USB memory or a memory card) 123 storing the above-mentioned program, and installing the program in a general-purpose computer using the external storage device 123.
• the means for supplying the program to the computer is not limited to supplying the program via the external storage device 123.
• the program may be supplied without going through the external storage device 123, using a communication means such as the Internet or a dedicated line.
• the storage device 121c and the external storage device 123 are configured as computer-readable recording media.
• recording media When the term recording media is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both.
• the term “wafer” can mean “the wafer itself” or “a laminate (assembly) of a wafer and a specific layer or film formed on its surface,” i.e., the wafer can include the specific layer or film formed on the surface.
• the term “surface of a wafer” can mean “the surface (exposed surface) of the wafer itself” or “the surface of a specific layer or film formed on a wafer, i.e., the outermost surface of the wafer as a laminate.”
• a specified gas is supplied to the wafer
• it may mean “a specified gas is supplied directly to the surface (exposed surface) of the wafer itself,” or "a specified gas is supplied to a layer or film formed on the wafer, i.e., to the outermost surface of the wafer as a laminate.”
• a specified layer (or film) is formed on the wafer
• it may mean “a specified layer (or film) is formed directly on the surface (exposed surface) of the wafer itself,” or "a specified layer (or film) is formed on the layer or film formed on the wafer, i.e., on the outermost surface of the wafer as a laminate.”
• the vacuum pump 246 exhausts gas from the processing chamber 201 so that the pressure in the processing chamber 201, i.e., the pressure in the space in which the wafer 200 exists, becomes a desired pressure (vacuum level). At this time, the pressure in the processing chamber 201 is measured by a pressure sensor 245, and the APC valves 242, 244 are feedback-controlled (pressure adjustment) based on the measured pressure information.
• the vacuum pump 246 is kept in a constantly operating state at least until the processing of the wafer 200 is completed.
• the heater 207 heats the processing chamber 201 so that the wafers 200 in the processing chamber 201 reach a desired temperature. At this time, the amount of electricity supplied to the heater 207 is feedback-controlled (temperature adjustment) based on temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution. Heating of the processing chamber 201 by the heater 207 continues at least until processing of the wafers 200 is completed. However, when processing of the wafers 200 is performed at room temperature, heating of the processing chamber 201 by the heater 207 does not have to be performed.
• the rotation mechanism 267 rotates the boat 217 and the wafers 200.
• the rotation mechanism 267 continues to rotate the boat 217 and the wafers 200 at least until the processing of the wafers 200 is completed.
• the film forming process includes at least a film forming step and a modification step.
• the film forming step includes at least a source gas supply step.
• the film forming step may include a source gas supply step and a reactive gas supply step.
• the film forming step may include a source gas supply step, a source gas purge step (a step of removing unreacted source gas and by-products in the process chamber 201 by evacuating the process chamber 201 or supplying N2 gas to the process chamber 201), a reactive gas supply step, and a purge step as appropriate, as in the case of including a reactive gas purge step.
• the modification step the film formed in the film forming step is modified.
• the film forming step and the modification step are regarded as one cycle, and each step may be repeated, or the modification step may be performed after the film forming step is performed multiple times.
• the above-mentioned purge step may be included between the film forming step and the modification step.
• N2 gas is supplied to the processing chamber 201 at a first inert gas flow rate from a nozzle 249a extending in the vertical direction while the exhaust of the processing chamber 201 containing the wafer 200 is substantially stopped. Furthermore, in the process of supplying N2 gas to the process chamber 201 while supplying the raw material gas to the process chamber 201, the raw material gas stored in the storage section 280 is supplied from the nozzle 249a to the process chamber 201 while the exhaust of the process chamber 201 is substantially stopped, and N2 gas is supplied from the nozzle 249a to the process chamber 201 at a second inert gas flow rate greater than the first inert gas flow rate.
• N2 gas is supplied from the nozzle 249a to the process chamber 201 at the first inert gas flow rate while the process chamber 201 is being exhausted from below.
• the first exhaust line 230 is used for details of exhaust in the process of supplying the raw material gas to the process chamber 201.
• N2 gas is supplied at a first inert gas flow rate from the nozzle 249a extending in the vertical direction to the processing chamber 201. This process is performed for, for example, one second (1 s) under the control A of the sequence shown in FIG.
• valve 243a shown in FIG. 1 is opened, the valve 243b is closed, the valve 243c is closed, the valve 243d is opened, the valve 234e is opened, and the valve 265 is closed. Furthermore, the APC valves 242 and 244 are closed. In this manner, the valve 243a is opened and the valve 265 is closed, so that the source gas is stored in the storage section 280. Furthermore, the valve 243e is opened, so that the N 2 gas is supplied from the nozzle 249a to the processing chamber 201 at a first inert gas flow rate (for example, a predetermined value within a range of 0.5 to 3.0 [slm]).
• a first inert gas flow rate for example, a predetermined value within a range of 0.5 to 3.0 [slm]
• valve 243d is opened, so that the N 2 gas as a backflow prevention gas is supplied from the nozzle 249b to the processing chamber 201 at a predetermined value within a range of, for example, a flow rate of 0.5 to 5.0 [slm].
• the APC valves 242 and 244 are closed to substantially stop exhausting the processing chamber 201.
• the temperature of the heater 207 is set so that the temperature of the wafer 200 is set to a value within a range of, for example, 300 to 600° C.
• the expression of a numerical range such as "300 to 600°C” means that the lower limit and the upper limit are included in the range.
• “300 to 600°C” means "300°C or higher and 600°C or lower.” The same applies to other numerical ranges.
• the state in which exhaust of the processing chamber 201 is substantially stopped refers to a state in which the APC valves 242, 244 as opening and closing valves are substantially closed, and exhaust of the processing chamber 201 is substantially stopped.
• “Substantially” includes the following states. That is, it includes a state in which the APC valves 242, 244 are fully closed, and exhaust of the processing chamber 201 is stopped.
• “substantially” includes a state in which the APC valves 242, 244 are slightly open, and the processing chamber 201 is slightly exhausted.
• the state where the APC valves 242, 244 are slightly opened and the processing chamber 201 is slightly exhausted it is preferable to make the exhaust amount (exhaust rate) V [sccm] of the processing chamber 201 per unit time much smaller than the supply amount (supply rate) FB [sccm] of N2 gas per unit time, that is, FB>>V.
• the state where the APC valves 242, 244 are slightly opened and the processing chamber 201 is slightly exhausted includes a state where the supply amount FB of N2 gas per unit time is within ⁇ 10% of the exhaust amount V of the processing chamber 201 per unit time.
• gas is supplied with the APC valves 242 and 244 fully closed and exhaust from the processing chamber 201 stopped.
• the source gas stored in the storage section 280 is supplied from the nozzle 249a to the processing chamber 201, while N2 gas is supplied from the nozzle 249a to the processing chamber 201 at a second inert gas flow rate that is higher than the first inert gas flow rate. This process is performed for, for example, 3 seconds under the control B of the sequence shown in FIG.
• the valve 243a is closed, the valve 243b is closed, the valve 243c is closed, the valve 243d is opened, the valve 243e is opened, and the valve 265 is opened. Furthermore, the APC valves 242 and 244 are closed. In this manner, the valve 243a is closed and the valve 265 is opened, whereby the source gas (for example, a predetermined amount within a range of 100-250 cc) stored in the storage section 280 is supplied from the nozzle 249a to the processing chamber 201 (so-called flush supply, or flush flow). At this time, a large amount of the source gas is instantaneously supplied to the processing chamber 201, and a gradually decreasing amount is supplied to the processing chamber 201.
• the source gas for example, a predetermined amount within a range of 100-250 cc
• valve 243e is opened, and the MFC 241e is controlled to supply N 2 gas from the nozzle 249a to the processing chamber 201 at a second inert gas flow rate (for example, a predetermined value within a range of 1.5-4.5 [slm]) that is greater than the first inert gas flow rate.
• a second inert gas flow rate for example, a predetermined value within a range of 1.5-4.5 [slm]
• the source gas stored in the storage portion 280 is pushed out by the N2 gas and supplied from the nozzle 249a to the processing chamber 201.
• N2 gas as a backflow prevention gas is supplied from the nozzle 249b to the processing chamber 201 at a predetermined value within a flow rate range of, for example, 1.0-5.0 [slm].
• the APC valve 244 also begins to open, and exhaust from the first exhaust line 230 begins. For example, in FIG. 5, the APC valve 244 begins to open around 4 [s].
• valve 243a is opened, the valve 243b is closed, the valve 243c is closed, the valve 243d is opened, the valve 243e is opened, and the valve 265 is closed.
• the APC valve 244 is opened to adjust the pressure in the processing chamber 201 to a predetermined value within a range of, for example, 700 to 1200 [Pa]. In this manner, the valve 243a is opened, and the valve 265 is opened, so that the source gas starts to be stored again in the storage section 280.
• valve 243e is opened, and the MFC 241e is controlled to supply N2 gas from the nozzle 249a to the processing chamber 201 at a first inert gas flow rate (for example, a predetermined value within a range of 1.3 to 1.7 [slm]). Also, by opening the valve 243d, N2 gas as a backflow prevention gas is supplied from the nozzle 249b to the processing chamber 201 at a predetermined value within the range of, for example, 1.3 to 1.7 [slm].
• a first inert gas flow rate for example, a predetermined value within a range of 1.3 to 1.7 [slm]
• the process is performed by waiting for the reaction of the raw material gas supplied to the processing chamber 201 after the process of supplying the raw material gas to the processing chamber 201 with the valve 243a closed, but the process may be performed by opening the valve 243a and flowing the raw material gas that has passed through the storage section 280.
• the flow rate of the raw material gas flowing in the process of supplying the raw material gas to the processing chamber with the valve 243a closed may be referred to as the first raw material gas flow rate
• the flow rate of the raw material gas in the process of opening the valve 243a and flowing the raw material gas that has passed through the storage section 280 may be referred to as the second raw material gas flow rate (for example, a predetermined value within the range of 0.5 to 2.0 [slm]).
• the raw material-containing layer may be a layer, an adsorption layer of the raw material gas, or it may include both.
• valve 243a is closed, the valve 243b is closed, the valve 243c is opened, the valve 243d is opened, the valve 243e is opened, and the valve 265 is opened. Furthermore, the APC valve 244 is opened. As a result, the valves 243c, 243e, and 267 are opened, and N2 gas is supplied from the nozzle 249a to the processing chamber 201. Furthermore, the valve 243d is opened, and N2 gas is supplied from the nozzle 249b to the processing chamber 201.
• the APC valve 244 is opened, the gas in the processing chamber 201 is exhausted by the vacuum pump 246, and the raw material gas remaining in the processing chamber 201 that has not reacted or that has contributed to the formation of the raw material-containing layer is removed from the processing chamber 201 (removal of residual gas).
• the APC valve 244 does not need to be fully opened.
• the valves 243c and 243d are opened, and the supply of N2 gas to the processing chamber 201 is maintained.
• the N2 gas acts as a purge gas, and this enhances the effect of removing the raw material gas remaining in the processing chamber 201 that has not reacted or that has contributed to the formation of the raw material-containing layer from the processing chamber 201.
• the gas remaining in the processing chamber 201 does not have to be completely removed, and the processing chamber 201 does not have to be completely purged. If the amount of gas remaining in the processing chamber 201 is small, no adverse effects will occur in the subsequent processes. At this time, the flow rate of N2 gas supplied to the processing chamber 201 does not need to be large, and for example, by supplying an amount approximately equal to the volume of the processing chamber 201, purging is performed to an extent that no adverse effects will occur in the subsequent processes. In this way, by not completely purging the processing chamber 201, the purge time is shortened and the throughput is improved. In addition, it is possible to minimize the consumption of N2 gas.
• valve 243a is opened, valve 243b is opened, valve 243c is closed, valve 243d is closed, valve 243e is opened, and valve 265 is closed. Furthermore, APC valve 244 is opened. Also, a voltage is applied between rod-shaped electrodes 269 and 270. That is, plasma-excited gas is supplied to processing chamber 201.
• the source gas is stored in the reservoir 280 by opening the valve 243a and closing the valve 265.
• the valve 243e is opened to supply N2 gas as a backflow prevention gas from the nozzle 249a to the processing chamber 201.
• the valve 243b is opened to supply a reaction gas from the nozzle 249b to the processing chamber 201 at a predetermined flow rate within a range of, for example, 0.5 to 10 [slm].
• the APC valve 244 is opened to exhaust gas from the processing chamber 201 by the vacuum pump 246. At this time, the temperature of the heater 207 is set to be the same value as when the source gas is supplied.
• the reactive gas undergoes a surface reaction (chemical adsorption) with the raw material-containing layer formed on the surface of the wafer 200, forming the desired film on the wafer 200.
• reaction gas purging process film formation process
• the reaction gas remaining in the process chamber 201 is removed, and the process chamber 201 is purged. This process is performed under control F of the sequence shown in Fig. 5.
• the reaction gas purge process is an example of a first purge process or a second purge process.
• valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. Furthermore, APC valve 244 is opened. Also, the voltage applied between rod electrodes 269 and 270 is stopped.
• valve 243a is opened and the valve 265 is closed, whereby the source gas is stored in the reservoir 280. Furthermore, the valve 243e is opened, whereby N2 gas is supplied from the nozzle 249a to the processing chamber 201. Furthermore, the valve 243d is opened, whereby N2 gas is supplied from the nozzle 249b to the processing chamber 201.
• Each of the above-mentioned steps constitutes one cycle, and by performing this cycle one or more times (a predetermined number of times), a film of a predetermined composition and a predetermined thickness is formed on the wafer 200. It is preferable to make the thickness of the layer formed per cycle smaller than the desired thickness, and to repeat the above-mentioned cycle multiple times until the desired thickness is reached.
• the process of storing the source gas in storage section 280 continues until a predetermined amount is stored. For example, this process may continue until the step of supplying reactive gas to processing chamber 201 from nozzle 249b and the step of removing reactive gas remaining in processing chamber 201.
• the exhaust line (exhaust system) is switched.
• the gas piping (first exhaust line 230) of the exhaust system used when supplying the raw material gas and the reaction gas (film formation process) is switched to the gas piping (second exhaust line 231) of the exhaust system used in the process in which the formed film is modified.
• the flow path cross-sectional area of this second exhaust line 231 is configured to be larger than the flow path cross-sectional area of the first exhaust line 230.
• the flow path cross-sectional area of the second exhaust line 231 is configured to be more than twice the flow path cross-sectional area of the first exhaust line 230.
• the APC valve 244 of the first exhaust line 230 shown in FIG. 6 is fully closed, and the APC valve 242 of the second exhaust line 231 is opened.
• valve 243a is opened
• valve 243b is closed
• valve 243c is closed
• valve 243d is opened
• valve 243e is opened
• valve 265 is closed.
• the APC valve 242 of the second exhaust line is opened, and a process of removing the reaction gas is performed. In short, it is sufficient to make the second exhaust line capable of exhausting before the reforming process.
• valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. Furthermore, the APC valve 242 of the second exhaust line 231 is fully opened. Also, a voltage is applied between the rod-shaped electrodes 269 and 270 shown in FIG. 2. That is, plasma-excited inert gas is supplied to the processing chamber 201.
• the APC valve 242 in the second exhaust line 231 When the APC valve 242 in the second exhaust line 231 is opened, the plasma-excited gas (active species) in the processing chamber 201 is exhausted by the vacuum pump 246 via the second exhaust line 231.
• exhaust is performed via the APC valve 244 of the first exhaust line 230, and in the modification process in which the film is modified, exhaust is performed via the APC valve 242 of the second exhaust line 231.
• a film is formed on the wafer 200 while exhausting through the first exhaust line 230, and the wafer 200 is modified while exhausting through the second exhaust line 231, which has a larger flow path cross-sectional area than the first exhaust line 230.
• the amount of gas exhausted in the modification process in which the film is modified is greater than the amount of gas exhausted in the film formation process in which a film is formed on the wafer 200.
• the modifier can be supplied to the surface of the wafer 200 while still activated, and in particular, the modifier can be spread to the center of the wafer 200 while still activated. Therefore, in this embodiment, the active species (activated modifier) spreads over the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the exhaust conductance can be reduced, so that a low pressure is maintained while increasing the amount of modifier or active species.
• a low pressure increases the transport efficiency of the modifier or active species. Therefore, as described above, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the upper limit of the low pressure is determined by whether or not the in-plane uniformity is reduced because active species cannot be supplied to the center of the wafer 200. Furthermore, the lower limit of the low pressure is determined by whether or not the mean free path becomes too large (they do not collide with the wafer 200) and active species are not generated, or, even if active species are generated, collisions at the wafer periphery are reduced, reducing the amount of active species generated and reducing the in-plane uniformity.
• the supply of modifier is achieved under conditions that fall within the range of the upper and lower limits of the low pressure described above.
• the temperature of the heater 207 at this time may be set to the same value as when the raw material gas is supplied.
• the valves 243c, 243d, and 243e are opened, and N2 gas as an inert gas is supplied to the processing chamber 201 from each of the gas supply pipes 232c, 232d, and 232e, and exhausted from the second exhaust line 231.
• the N2 gas acts as a purge gas, and the processing chamber 201 is purged with the inert gas, and the gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 (purge).
• the atmosphere in the processing chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is returned to normal pressure (return to atmospheric pressure).
• the first exhaust line 230 may be used to exhaust the processing chamber 201 in the process of reducing the pressure from near atmospheric pressure to the first pressure
• the second exhaust line 231 may be used in the process of reducing the pressure from the first pressure to the second pressure
• the first exhaust line 230 may be used in the process of reducing the pressure from the second pressure to the processing pressure. This makes it possible to shorten the time required to reduce the pressure from atmospheric pressure to the processing pressure.
• a purge gas may be supplied in any of the processes.
• Modification 1 Next, a description will be given of Modification 1. As described above, in the modification process, it is only necessary to increase the amount of exhaust in the film formation process, so in Modification 1, as shown in FIG. 6, a gate valve 238 is provided in the second exhaust line 231 instead of the APC valve.
• the exhaust conductance can be reduced, so that a low pressure can be maintained while increasing the amount of modifier or active species.
• a low pressure increases the transport efficiency of the modifier or active species. Therefore, as described above, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• Modified example 2 is an improved version of modified example 1.
• a gate valve 238 is provided in the second exhaust line 231 instead of the APC valve, and further, a vacuum pump 236 is provided as an exhaust device in the second exhaust line 231 downstream of the gate valve 238 and upstream of the junction with the first exhaust line 230.
• the vacuum pumps 236 and 246 are configured to operate.
• the vacuum pump 236 is operated, so that a lower pressure than Modification 1 can be expected. This allows the exhaust conductance to be lowered, so that a low pressure is maintained while increasing the amount of modifier or active species. Such a low pressure increases the transport efficiency of the modifier or active species. As described above, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness. However, in this case, there is a concern that the exhaust capacity of the vacuum pump 236 may be increased and the pressure may be set too low. This would result in a phenomenon in which the mean free path becomes too large and active species are not generated (without colliding with the wafer 200).
• a vacuum pump is provided as an exhaust device in each of the first exhaust line 230 and the second exhaust line 231.
• the second exhaust line 231 is provided with a gate valve 238.
• the first exhaust line 231 branches off from the second exhaust line 231 upstream of the gate valve 238, and does not merge with the second exhaust line 231.
• the first exhaust line 230 is provided with an APC valve 244 and a vacuum pump 248 disposed downstream of the APC valve 244.
• the exhaust performance of this vacuum pump 248 is weaker than the exhaust performance of the vacuum pump 246. In other words, the exhaust performance of the vacuum pump 246 is stronger than the exhaust performance of the vacuum pump 248.
• the APC valve 244 of the first exhaust line 230 is opened, and the gate valve 238 of the second exhaust line 231 is closed.
• the vacuum pump 248 is operated.
• exhaust is performed via the APC valve 244 of the first exhaust line 230.
• the APC valve 244 of the first exhaust line 230 is fully opened, and the gate valve 238 of the second exhaust line 231 is opened. Furthermore, the vacuum pumps 246 and 248 are operated. As a result, in the reforming process, exhaust is performed through the APC valve 244 of the first exhaust line 230, and further, exhaust is performed through the gate valve 238 of the second exhaust line 231. Alternatively, in the reforming process, the APC valve 244 of the first exhaust line 230 is closed, and the gate valve 238 of the second exhaust line 231 is opened. Furthermore, the vacuum pump 246 is operated. As a result, in the reforming process, exhaust is performed through the gate valve 238 of the second exhaust line 231.
• the vacuum pump 246 has a higher exhaust capacity than the vacuum pump 248 provided in the first exhaust line and the vacuum pump 246 provided in the second exhaust line.
• the exhaust conductance can be reduced, and low pressure can be maintained while increasing the amount of modifier or active species.
• Such low pressure increases the transport efficiency of the modifier or active species. Therefore, as described above, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the present disclosure provides one or more of the following advantages:
• the amount of gas exhausted in the modification process is set to be greater than the amount of gas exhausted in the film formation process.
• the active species in the modification process are thermally activated.
• This allows the use of an activated inert gas (modifier) to improve film density and impurities in the film, making it possible to form a film of good quality at a low temperature.
• an activated inert gas modifier
• a low pressure can be achieved without reducing the amount of thermally activated active species, and such a low pressure can increase the transport efficiency of the thermally activated active species. Therefore, the active species (activated modifier) spreads over the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the active species in the modification process are plasma excited. This allows the film density and impurities in the film to be improved by using an activated inert gas (modifier), making it possible to form a film with good film quality at a low temperature. Furthermore, by increasing the amount of gas exhausted in the modification process, a low pressure can be achieved without reducing the amount of plasma-excited active species, and such a low pressure can increase the transport efficiency of the plasma-excited active species. Therefore, the active species (activated modifier) spreads over the entire wafer 200, improving the in-plane uniformity of the film thickness.
• an activated inert gas modifier
• a film having a predetermined thickness can be formed by performing a cycle of the film formation process and the modification process a predetermined number of times or more.
• low pressure can be achieved without reducing the amount of modifier in the modification process, and it is expected that both the supply amount of modifier and the life of the active species can be achieved.
• the use of active species can improve the film density and impurities in the film, making it possible to form a film with good film quality at a low temperature.
• a film having a predetermined film thickness can be formed.
• low pressure can be achieved without reducing the amount of modifier in the modification process, and it is expected that both the amount of modifier supplied and the life of the active species can be achieved.
• the use of active species can improve the film density and impurities in the film, making it possible to form a film with good film quality at a low temperature.
• the system also includes a first exhaust line 230 configured to exhaust gas from the processing chamber 201 that processes the wafer 200, and a second exhaust line 231 that branches off from the first exhaust line 230 and has a larger flow cross-sectional area than the first exhaust line 230.
• the system is configured to be able to form a film on the wafer 200 while exhausting through the first exhaust line 230, and is configured to be able to modify the film while switching from the first exhaust line 230 to the second exhaust line 231 and exhausting with a larger exhaust volume than the first exhaust line.
• the flow path cross-sectional area of the second exhaust line 231 is configured to be at least twice the flow path cross-sectional area of the first exhaust line 231. This allows the amount of gas exhausted in the film modifying process to be greater than the amount of gas exhausted in the process of forming a film on the wafer 200, so that a low pressure can be maintained even if the amount of modifier supplied is increased, and further, the processing pressure can be reduced. Such low pressure can increase the transport efficiency of the activated modifier. Therefore, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the exhaust conductance can be lowered, so that it is possible to maintain a low pressure while increasing the amount of modifier or active species.
• the active species activated modifier
• the first exhaust line 230 can be switched to the second exhaust line 231 while the processing chamber 201 is being purged.
• the conductance can be reduced, and therefore a low pressure can be maintained while increasing the amount of modifier or active species.
• the transport efficiency of the activated modifier or active species can be increased. Therefore, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the second exhaust line 231 is provided with a vacuum pump 236 (see FIG. 7) as an exhaust device for exhausting the atmosphere of the processing chamber 201.
• the controller 121 is configured to be able to operate the vacuum pump 236 when modifying the film.
• the controller 121 is configured to be able to exhaust gas through both the first exhaust line 230 and the second exhaust line 231 when modifying a film.
• the controller 121 is configured to be able to exhaust gas through both the first exhaust line 230 and the second exhaust line 231 when modifying a film.
• the apparatus has an activation section that activates a reactive gas, and is configured to be able to form a film on the wafer 200 by supplying the reactive gas activated by the activation section.
• the apparatus has rod-shaped electrodes 269, 270 and electrode protection tube 275 as an activation section that activates an inert gas, and is configured to be able to modify the film formed on the wafer 200 by supplying the activated inert gas by the rod-shaped electrodes 269, 270 and electrode protection tube 275 as an activation section.
• an activated inert gas modifier
• can improve the film density and impurities in the film so that a film with good film quality can be formed at a low temperature.
• the amount of gas exhausted in the film modifying process can be greater than the amount of gas exhausted in the process of forming a film on the wafer 200, so that a low pressure can be maintained even if the amount of activated modifier supplied is increased, and further, the processing pressure can be reduced.
• Such low pressure can increase the transport efficiency of the activated modifier. Therefore, the active species (activated modifier) spreads throughout the entire wafer 200, improving the in-plane uniformity of the film thickness.
• the generation of by-products is minor. This makes it possible to suppress adhesion of by-products to the vacuum pump 246, thereby reducing maintenance costs. In addition, this can be applied even to exhaust devices that are difficult to apply in normal processes due to the adhesion of by-products.
• the supply of the raw material gas was described using a flash flow supply, but it goes without saying that this is not limited to a flash flow supply and other supply methods may also be used.
• the raw material gas may be a silicon-based raw material, a titanium-based raw material (e.g., titanium tetrachloride), a tantalum-based raw material (e.g., tantalum pentachloride), a hafnium-based raw material (e.g., tetrakisethylmethylaminohafnium), a zirconium-based raw material (e.g., tetrakisethylmethylaminozirconium), an aluminum-based raw material (trimethylaluminum), or the like.
• a titanium-based raw material e.g., titanium tetrachloride
• a tantalum-based raw material e.g., tantalum pentachloride
• a hafnium-based raw material e.g., tetrakisethylmethylaminohafnium
• zirconium-based raw material e.g., tetrakis
• N2 gas is used as the inert gas
• other gases such as Ar gas, He gas, Ne gas, and Xe gas may be used.
• the present disclosure may be used not only in semiconductor manufacturing equipment but also in equipment that processes glass substrates, such as LCD devices.
• the film formation process of the present disclosure may be used, for example, in processes such as CVD, PVD, processes for forming oxide films, nitride films, or both, processes for forming films containing metals, and may also be used in processes such as annealing processes, oxidation processes, nitriding processes, and diffusion processes.
• Processing chamber 230 First exhaust line (bypass exhaust line) 231 Second exhaust line (main exhaust line)

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• 2022
  • 2022-09-27 WO PCT/JP2022/035986 patent/WO2024069763A1/ja not_active Ceased
  • 2022-09-27 CN CN202280097959.4A patent/CN119654699A/zh active Pending
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• 2023
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