WO2024062988A1 - Resin film, scribing device, and scribing method - Google Patents

Abstract

[Problem] To provide a resin film which can be interposed between a substrate and a substrate holding part so as to easily hold the substrate on the substrate holding part, and which makes it possible to appropriately remove a plurality of components produced from the substrate. [Solution] Provided is a resin film 40 which is arranged between a substrate S and a substrate holding part 10 when the substrate S supported on the substrate holding part 10 is scribed, the resin film 40 having porosity, also having air permeability between a first contact surface 41 thereof that comes into contact with the substrate S and a second contact surface 42 thereof that comes into contact with the substrate holding part 10, and also having hardness of 1.6 to 33.5 N/mm2 when measured by a nanoindentation method, in which the frictional coefficient of the first contact surface is 1.0 or less when measured in a pin-on-disk test.

Description

Resin film, scribing device, and scribing method

The present invention relates to a resin film, a scribing device, and a scribing method.
This application claims priority based on Japanese Patent Application No. 2022-149613 filed in Japan on September 20, 2022, the contents of which are incorporated herein.

For example, foldable smartphones, so-called foldable smartphones, use displays that can be folded. Since the glass parts used in this display are thin, they are required to be appropriately cut into a desired shape from a single glass substrate. A scribing device is used to cut out the glass member. A scribing device forms a groove (also referred to as a scribe line or trench line) on the surface of a glass substrate placed on a substrate support using a scribing tool (for example, see Patent Document 1). After the grooves are formed, a plurality of glass components are obtained from one glass substrate by dividing the glass substrate at the groove positions.

When forming grooves in a scribing device, it is necessary to suction and hold the glass substrate on a substrate support so that the glass substrate does not shift when the tool moves. On the other hand, if the glass substrate is placed directly on the substrate support, the glass substrate will come into contact with the substrate support, which may cause damage to the glass substrate, such as scratching the surface of the glass substrate. Therefore, Patent Document 1 discloses interposing a polyethylene terephthalate (PET) film between the glass substrate and the substrate support.

JP2021-053880A

As described in Patent Document 1, when a polyethylene terephthalate film is interposed between the glass substrate and the substrate support, this film can be held by suction through the suction holes or suction grooves of the substrate support. Since the film does not have air permeability (or has low air permeability), it cannot properly hold the glass substrate placed on the film. Therefore, it is necessary to fix the glass substrate to the film using tape or the like, for example. The work of pasting the tape etc. must be done by the worker, and there is a problem in that the work of peeling off the tape etc. increases the labor of the worker.

Furthermore, after obtaining a plurality of glass parts from a glass substrate, the glass parts are taken out one by one using a pick-up device or the like, but if one of the glass parts is lifted as it is, the adjacent glass part may get caught. Therefore, when taking out a plurality of glass parts, one glass part to be taken out is first shifted laterally and separated from the adjacent glass part, and then that glass part is lifted. At this time, if the coefficient of friction of the film interposed between the glass component and the substrate support is high, it becomes difficult to shift the glass component laterally, and there is a problem that the glass component cannot be taken out appropriately. In addition, when cutting a glass substrate after scribing, the glass substrate may be taken out from the scribing device or transported to the cutting device. A similar problem occurs in this case as well.
Furthermore, if the film has low rigidity (softness), especially in the case of a thin glass substrate, scribing becomes difficult because the substrate sinks due to the pressing of the tool.

According to the present invention, it is possible to easily hold the substrate to the substrate support part while being interposed between the substrate and the substrate support part, and furthermore, it is possible to appropriately take out a plurality of components obtained from the board. The purpose of the present invention is to provide a resin film, a scribing device, and a scribing method that can perform the following steps.

According to an aspect of the present invention, when scribing a substrate supported by the substrate support, the resin film is disposed between the substrate and the substrate support, the resin film is porous, and It has air permeability between the first contact surface with the substrate and the second contact surface with the substrate support, has a hardness of 1.6 to 33.5 N/mm ² by nanoindentation method, and has pin-on A resin film is provided whose first contact surface has a coefficient of friction of 1.0 or less as measured by a disk test.

Further, according to an aspect of the present invention, a substrate support section that supports the substrate, a processing section that performs scribing on the substrate supported by the substrate support section, and a resin disposed between the substrate and the substrate support section. a film, and a reduced pressure suction section provided on the substrate support section to suck the substrate through the resin film, the resin film has porousity and has a first contact surface with the substrate, and the substrate support section. The hardness is 1.6 to 33.5 N/mm ² by nanoindentation method, and the friction coefficient of the first contact surface is 1 by pin-on-disk test. A scribing device is provided in which the scribing device has a .0 or less.

Further, according to an aspect of the present invention, there is provided a method for scribing a substrate, in which the substrate is placed on the resin film of the substrate support portion on which the resin film is placed, and vacuum suction is applied to the substrate support portion through the resin film. The resin film is porous and has a first contact surface with the substrate. , has air permeability between the second contact surface with the substrate support, has a hardness of 1.6 to 33.5 N/mm 2 by nanoindentation method, and has a hardness of 1.6 to 33.5 N/mm ² by the pin-on-disk test of the first contact surface. A scribing method is provided in which the coefficient of friction is 1.0 or less.

According to the aspect of the present invention, since the resin film has breathability, the substrate can be sucked through the resin film, and the substrate can be held by the substrate support. Therefore, the effort of fixing the resin film and the substrate with tape or the like can be eliminated. In addition, since the hardness of the resin film measured by the nanoindentation method is 1.6 to 33.5 N/ ^mm2 , and the friction coefficient of the first contact surface of the resin film measured by the pin-on-disk test is 1.0 or less, the parts obtained from the substrate can be easily shifted sideways, and the multiple parts can be appropriately removed.

1 is a schematic cross-sectional view showing an example of a resin film and a scribing device according to an embodiment. FIG. 2 is a schematic plan view showing an example of a resin film and a scribing device according to the embodiment. It is an exploded perspective view showing a part of resin film and a scribing device concerning an embodiment. It is a sectional view showing an example of the resin film concerning an embodiment. FIG. 2 is an enlarged cross-sectional view showing a state in which a substrate is sucked in the scribing device according to the embodiment. It is a figure showing an example of the manufacturing method of the resin film concerning an embodiment. It is a figure showing an example of the manufacturing method of the resin film concerning an embodiment. It is a figure showing an example of the manufacturing method of the resin film concerning an embodiment. It is a figure which shows an example of the manufacturing method of a resin film following FIG. It is a figure which shows an example of the manufacturing method of a resin film following FIG. It is a sectional view showing other examples of the resin film concerning an embodiment. 3 is a flowchart illustrating an example of a method for scribing a substrate according to an embodiment. It is a figure showing one process of the scribing method of the substrate concerning an embodiment. It is a figure showing one process of the scribing method of the substrate concerning an embodiment. Continuing from FIG. 10, it is a diagram showing one step of the substrate scribing method according to the embodiment. Continuing from FIG. 10, it is a diagram showing one step of the substrate scribing method according to the embodiment. Continuing from FIG. 11, it is a diagram showing one step of the substrate scribing method according to the embodiment. FIG. 12 is a diagram illustrating one step of the substrate scribing method according to the embodiment, following FIG. 12 . FIG. 13 is a diagram illustrating one step of the substrate scribing method according to the embodiment, following FIG. 13 . 1 is a table showing the results of evaluation tests of resin films according to examples.

Hereinafter, embodiments will be described with reference to the drawings. However, the present invention is not limited to the following explanation. In addition, in order to explain the embodiments in an easy-to-understand manner, the drawings are depicted by changing the scale as appropriate, such as by enlarging or emphasizing some parts, and the size, shape, etc. of the actual product may differ. be. In each figure below, directions in the figure will be explained using an XYZ orthogonal coordinate system. In this XYZ orthogonal coordinate system, a plane parallel to the horizontal plane is defined as an XY plane. One direction parallel to the XY plane will be referred to as the X direction, and the direction perpendicular to the X direction will be referred to as the Y direction. Further, a direction perpendicular to the XY plane is referred to as a Z direction (vertical direction). The X direction, Y direction, and Z direction will be described assuming that the direction indicated by the arrow in the figure is the + direction, and the direction opposite to the direction indicated by the arrow is the - direction.

<Resin film and scribing device>
FIG. 1 is a schematic cross-sectional view showing an example of a resin film 40 and a scribing device 1 according to an embodiment. FIG. 2 is a schematic plan view showing an example of the resin film 40 and the scribing device 1 according to the embodiment. FIG. 3 is an exploded perspective view showing a part of the resin film 40 and the scribing device 1 according to the embodiment. As shown in FIGS. 1, 2, and 3, the scribing apparatus 1 includes a substrate support section 10, a processing section 20, a vacuum suction section 30, a resin film 40, and a control section 50.

The substrate support section 10 supports the substrate S on the upper surface 11 side. The substrate S is, for example, a glass substrate having a predetermined thickness. The substrate S is a rectangular substrate having a rectangular shape such as a square or a rectangle in a plan view, that is, viewed from the Z direction (vertical direction), but is not limited to being a rectangular substrate and may have a circular or elliptical shape. , oval shape, trapezoid shape, etc. The thickness of the substrate S is, for example, 100 μm or less. The substrate S has a processed surface S1 and a lower surface S2. The surface to be processed S1 is oriented upward when supported by the substrate support section 10, and is scribed by a scribing tool (scribe tool) 23, which will be described later. The lower surface S2 faces toward the substrate support 10 when supported by the substrate support 10. Note that the substrate S is not limited to being a glass substrate, and may be other brittle material substrates, resin substrates, or the like.

The substrate support portion 10 is provided in a size that allows the substrate S to be placed on the upper surface 11, and includes a space portion 12 and a suction hole 13. The substrate support section 10 fixes the substrate S on the upper surface 11 side via the resin film 40. The space part 12 is provided inside the substrate support part 10. The size of the space 12 is arbitrary. The upper surface of the space 12 communicates with the suction hole 13, and the lower surface communicates with a suction pipe 31 of a reduced pressure suction section 30, which will be described later.

A plurality of suction holes 13 are provided so as to communicate with the space portion 12 from the upper surface 11 of the substrate support portion 10 in the −Z direction (downward). The number and arrangement of the suction holes 13 are arbitrary. For example, the plurality of suction holes 13 may be arranged such that the distance between adjacent suction holes 13 is constant or almost constant, or they may be arranged concentrically around the upper surface 11 of the substrate support part 10. good. The plurality of suction holes 13 may be arranged concentrically around the upper surface 11 of the substrate support section 10, for example. The plurality of suction holes 13 are provided at least in the upper surface 11 in a range where the resin film 40 is placed. The number of suction holes 13 is appropriately set depending on the sizes of the resin film 40 and the substrate S.

In this embodiment, a configuration in which a plurality of suction holes 13 are opened in the upper surface 11 of the substrate support portion 10 is described as an example, but the present invention is not limited to this configuration. For example, a plurality of suction grooves may be formed on the upper surface 11 of the substrate support section 10. In this case, a portion of the suction groove is communicated with the space 12 via the communication hole.
Further, the substrate support section 10 is rotated on the XY plane by a rotation mechanism (not shown), and is positioned at a predetermined angle with respect to the X direction, for example.

The processing unit 20 performs scribing processing on the processed surface S1 of the substrate S. The processing section 20 includes a processing head 21, a drive section 22, and a scribing tool 23. The processing head 21 is arranged above the substrate support part 10, is supported by a head support part (not shown), and is movable in the X direction and the Y direction. The head support unit (not shown) includes, for example, a gantry that straddles the substrate support unit 10 in the Y direction and is movable in the X direction, a Y slider that is movable in the Y direction relative to the gantry, and a gantry that is movable in the Y direction relative to the gantry. It consists of a lifting platform that can be raised and lowered. The processing head 21 is supported by a lifting table, and is movable in the X and Y directions by moving the gantry in the X direction, moving the Y slider in the Y direction, and raising and lowering the elevating section. Further, as the head support section (not shown), for example, a robot arm may be used.

The processing head 21 is moved via the above-described head support section (not shown) by driving the drive section 22. As described above, when the head support section is composed of a gantry, a Y slider, and an elevator platform, the drive section 22 is composed of a gantry drive section, a Y slider drive section, and an elevator platform drive section. The driving of the driving section 22 is controlled by the control section 50. Data regarding the position, movement amount, movement speed, etc. of the processing head 21 is stored in advance in a storage section (not shown) provided in the control section 50. The control unit 50 reads various data from the storage unit and controls the operation of the processing head 21.

The scribing tool 23 is, for example, fixed to the -Y side surface of the processing head 21 via a holder. Tool 23 is replaceable. The attachment position of the tool 23 to the processing head 21 is arbitrary; for example, the tool 23 may be attached to the -Z side surface (lower surface) of the processing head 21, or may be attached to the +X side surface. The lower end of the tool 23 has a blade portion 23a for scribing the surface S1 of the substrate S to be processed. The material of the blade portion 23a is not particularly limited as long as it can scribe the processed surface S1 of the substrate S, but diamond is preferable. More preferably, single crystal diamond is used. Further, polycrystalline diamond or sintered diamond may be used. In addition, in this embodiment, a type is used in which the blade part 23a is slid on the surface S1 to be processed of the substrate S to perform the scribing process. A type with a cutting edge may also be used.

The reduced pressure suction unit 30 is provided below the substrate support unit 10. The reduced pressure suction unit 30 includes a suction tube 31 and a suction device 32. The suction tube 31 is arranged approximately at the center of the lower surface of the substrate support section 10 and communicates with the space section 12 . The suction device 32 is, for example, a suction pump, and is connected to the suction pipe 31. As the suction device 32, a known device can be used as long as it has a suction function. By driving the suction device 32, the pressure in the space 12 is reduced through the suction pipe 31. By reducing the pressure in the space part 12, each of the plurality of suction holes 13 sucks the resin film 40 placed on the upper surface 11 of the substrate support part 10. Driving of the suction device 32 is controlled by a control section 50.

The resin film 40 is a porous resin film with air permeability, and is disposed between the substrate S and the substrate support section 10 as shown in FIGS. 1 to 3. FIG. 4 is a cross-sectional view showing an example of the resin film 40 according to the embodiment. As shown in FIG. 4, the resin film 40 has a first contact surface 41, a second contact surface 42, and a gap 43. The size of the resin film 40 is the same as or larger than the substrate S in plan view.

The gap 43 is provided so as to penetrate the first contact surface 41 and the second contact surface 42 . That is, the resin film 40 has air permeability between the first contact surface 41 and the second contact surface 42 due to the voids 43 . The resin film 40 preferably has a porosity of, for example, 50 to 70%. Further, the void 43 is formed by a plurality of voids communicating with each other, and the size of each void is preferably 250 to 2600 nm, for example. The thickness t (film thickness) of the resin film 40 is, for example, preferably 20 to 50 μm, more preferably 25 to 40 μm. Further, the hardness of the resin film 40 is preferably 1.6 to 33.5 N/mm ² by, for example, a nanoindentation method, and more preferably 5.17 to 33.5 N/mm ² . Further, the friction coefficient of the first contact surface 41 of the resin film 40 measured by a pin-on-disk test is preferably, for example, 1.0 or less, and more preferably 0.845 or less. Note that the material, manufacturing method, etc. of the resin film 40 will be described later.

As shown in FIG. 1 to FIG. 3, the resin film 40 is disposed between the substrate S and the substrate support part 10. The first contact surface 41 of the resin film 40 contacts the lower surface S2 of the substrate S. The second contact surface 42 of the resin film 40 contacts the upper surface 11 of the substrate support part 10. FIG. 5 is an enlarged cross-sectional view showing the state in which the substrate S is sucked in the scribing device 1 according to the embodiment. As shown in FIG. 5, when the suction device 32 is driven, suction is started from the suction hole 13 (see the white arrow) and sucks the resin film 40. This suction force reaches the lower surface S2 of the substrate S through the gap 43 of the resin film 40. As a result, the substrate S is sucked to the upper surface 11 of the substrate support part 10 (see the arrow), and is held (fixed) to the substrate support part 10 with the resin film 40 sandwiched between the substrate S and the upper surface 11 of the substrate support part 10.

The control unit 50 centrally controls each operation in the scribing device 1 described above. As described above, the control unit 50 controls the start and stop of driving of the suction device 32 of the vacuum suction unit 30, and controls the driving of the drive unit 22 of the processing unit 20. For example, when the resin film 40 and the substrate S are placed on the upper surface 11 of the substrate support part 10, the suction device 32 is driven by the output of a sensor (not shown) or by an instruction from an operator to remove the substrate support part 10. The substrate S is held on the upper surface 11. Further, after holding the substrate S on the substrate support section 10, the control section 50 moves the processing head 21 (tool 23) on a preset trajectory, and moves the tool 23 against the processing surface S1 of the substrate S. Scribe processing is performed using the blade portion 23a. Note that details of how the scribing device 1 according to the present embodiment performs scribing and the like on the substrate S will be described later.

<Method for manufacturing resin film>
A method for manufacturing the resin film 40 will be described with reference to FIGS. 6A to 6C and FIGS. 7A and 7B. 6A to 6C and FIGS. 7A and 7B are diagrams showing an example of a method for manufacturing the resin film 40 according to the embodiment. Note that the following description is an example of a manufacturing method, and does not limit the manufacturing method. First, as shown in FIG. 6A, a dry film D is manufactured from a coating liquid L, fine particles B, a base material F, and the like.

A coating liquid L containing a predetermined resin material 45, fine particles B, and a solvent is prepared. The predetermined resin material 45 includes polyamic acid, polyimide, polyamideimide, polyamide, polyvinylidene fluoride, polybenzoxazole resin, precursor polymer of polybenzoxazole resin, polybenzimidazole resin, precursor polymer of polybenzimidazole resin, At least one of polysulfone, polyaryl sulfone, and polyether sulfone is mentioned. Among these, at least one of imide-based resins such as polyamic acid, polyimide, polyamideimide, and polyamide is preferred. As the solvent, any organic solvent that can dissolve the resin material 45 used can be used.

The coating liquid L described above is prepared by, for example, mixing a solvent in which the fine particles B are dispersed in advance and at least one of polyamic acid, polyimide, polyamideimide, and polyamide as the resin material 45 in an arbitrary ratio. . Alternatively, it may be prepared by polymerizing at least one of polyamic acid, polyimide, polyamideimide, and polyamide in a solvent in which the fine particles B are dispersed in advance. For example, it can be produced by polymerizing a tetracarboxylic dianhydride and a diamine in an organic solvent in which fine particles B are dispersed in advance to obtain a polyamic acid, or by further imidizing it to obtain a polyimide.

The final viscosity of the coating liquid L is preferably 300 to 5000 cP, more preferably 400 to 3000 cP, and even more preferably 600 to 2500 cP. If the viscosity of the coating liquid L is within this range, it is possible to form a film uniformly. Of all the components in the coating liquid L, the content of the solvent is, for example, 50 to 95% by mass, preferably 60 to 85% by mass.

For example, the coating liquid L contains the resin material 45 and the fine particles B in a volume ratio of 10:90 to 50:50. Note that the volume of each resin material 45 is determined by multiplying the mass of each resin material 45 by its specific gravity. In this case, if the volume of the fine particles B is 65 or more when the entire volume of the coating liquid L is 100, the particles will be uniformly dispersed, and if the volume of the fine particles B is 81 or less, the particles will aggregate. Disperse without doing anything. Therefore, the voids 43 can be uniformly formed in the resin film 40. Moreover, if the volume ratio of the fine particles B is within this range, releasability when forming the dry film D can be ensured.

In the above coating liquid L, when fine particles B and polyamic acid or polyimide are dried to form a dry film D, if the material of fine particles B is an inorganic material described below, the ratio of fine particles/polyimide is, for example, 2 to 2. Fine particles B and polyamic acid or polyimide are mixed so that the ratio is 6 (mass ratio), preferably 3 to 5 (mass ratio). When the material of the fine particles B is an organic material described below, the fine particles B and the polyamic acid are mixed so that the fine particle/polyimide ratio is, for example, 1 to 3.5 (mass ratio), preferably 1.2 to 3 (mass ratio). Or mixed with polyimide. For example, when fine particles B are 72% by volume (~2.6 volume times) with respect to the resin material 45, the mass ratio is silica (fine particles)/polyimide = 80/20, or polymethyl methacrylate resin (fine particles). /polyimide=(68/32) to 2.1 times. With such settings, it is possible to stably form a film without causing problems such as an increase in viscosity or cracks in the film.

In addition, in the case of dry film D, for example, fine particles and polyamic acid or polyimide are mixed so that the volume ratio of fine particles/polyimide is 1.5 to 4.5, preferably 1.8 to 3 (volume ratio). Mix. When the volume ratio is within the above range, a film can be stably formed without causing problems such as an increase in viscosity or cracks in the film. When forming dry film D, if the mass ratio or volume ratio of fine particles/polyimide is above the lower limit value, pores with an appropriate density can be obtained, and if it is below the upper limit value, viscosity increase or cracks in the film may occur. It is possible to stably form a film without causing problems such as the following. When the resin material 45 is polyamideimide or polyamide instead of polyamic acid or polyimide, the mass ratio is the same as above.

The preferred resin material 45, fine particles B, and solvent constituting the coating liquid L will be specifically explained below. First, the resin material 45 will be explained.
<Polyamic acid>
The polyamic acid obtained by polymerizing any tetracarboxylic dianhydride and diamine can be used without particular limitation. The amounts of tetracarboxylic dianhydride and diamine to be used are not particularly limited, but it is preferable to use 0.50 to 1.50 mol of diamine, and 0.60 to 1.50 mol, per 1 mol of tetracarboxylic dianhydride. It is more preferable to use 30 mol, particularly preferably 0.70 to 1.20 mol.

The tetracarboxylic dianhydride can be appropriately selected from tetracarboxylic dianhydrides that have been conventionally used as raw materials for synthesizing polyamic acid. The tetracarboxylic dianhydride may be an aromatic tetracarboxylic dianhydride or an aliphatic tetracarboxylic dianhydride, but from the viewpoint of the heat resistance of the resulting polyimide resin, it is preferable to use an aromatic tetracarboxylic dianhydride. Two or more types of tetracarboxylic dianhydrides may be used in combination.

Specific examples of suitable aromatic tetracarboxylic dianhydrides include pyromellitic dianhydride, 1,1-bis(2,3-dicarboxyphenyl)ethane dianhydride, bis(2,3-dicarboxyphenyl)methane dianhydride, bis(3,4-dicarboxyphenyl)methane dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, 2,3,3',4'-biphenyltetracarboxylic dianhydride, 2,2,6,6-biphenyltetracarboxylic dianhydride, dianhydride, 2,2-bis(3,4-dicarboxyphenyl)propane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)propane dianhydride, 2,2-bis(3,4-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropane dianhydride, 2,2-bis(2,3-dicarboxyphenyl)-1,1,1,3,3,3-hexafluoropropane dianhydride, 3,3',4,4'-benzophenone tetraanhydride Carboxylic acid dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, bis(2,3-dicarboxyphenyl)ether dianhydride, 2,2',3,3'-benzophenone tetracarboxylic acid dianhydride, 4,4-(p-phenylenedioxy)diphthalic acid dianhydride, 4,4-(m-phenylenedioxy)diphthalic acid dianhydride, 1,2,5,6-naphthalene tetracarboxylic acid dianhydride, 1,4,5,8-naphthalene tetracarboxylic acid dianhydride, 2,3,6,7-naphthalene tetracarboxylic acid dianhydride, 1,2,3,4-benzene tetracarboxylic acid dianhydride, 3,4,9,10-perylene tetracarboxylic acid dianhydride, 2,3,6,7-anthracene tetracarboxylic acid dianhydride, 1,2,7,8-phenanthrene tetracarboxylic acid dianhydride, 9,9-bisphthalic anhydride fluorene, 3,3',4,4'-diphenylsulfone tetracarboxylic acid dianhydride, and the like. Examples of aliphatic tetracarboxylic dianhydrides include ethylene tetracarboxylic dianhydride, butane tetracarboxylic dianhydride, cyclopentane tetracarboxylic dianhydride, cyclohexane tetracarboxylic dianhydride, 1,2,4,5-cyclohexane tetracarboxylic dianhydride, and 1,2,3,4-cyclohexane tetracarboxylic dianhydride. Among these, 3,3',4,4'-biphenyl tetracarboxylic dianhydride and pyromellitic dianhydride are preferred in terms of price, availability, and the like. These tetracarboxylic dianhydrides can be used alone or in combination of two or more.

The diamine can be appropriately selected from diamines conventionally used as raw materials for synthesizing polyamic acids. The diamine may be aromatic diamine or aliphatic diamine, but aromatic diamine is preferable from the viewpoint of heat resistance of the resulting polyimide resin. These diamines may be used in combination of two or more.

Examples of the aromatic diamine include diamino compounds in which one or about 2 to 10 phenyl groups are bonded. Specifically, phenylene diamine and its derivatives, diaminobiphenyl compounds and its derivatives, diaminodiphenyl compounds and its derivatives, diaminotaphenyl compounds and its derivatives, diaminonaphthalene and its derivatives, aminophenylaminoindan and its derivatives, diaminotetraphenyl Compounds and derivatives thereof, diaminohexaphenyl compounds and derivatives thereof, cardo-type fluorenediamine derivatives.

Phenylene diamines include m-phenylene diamine and p-phenylene diamine, and examples of phenylene diamine derivatives include diamines to which alkyl groups such as methyl and ethyl groups are bonded, such as 2,4-diaminotoluene and 2,4-triphenylene. diamines, etc.

A diaminobiphenyl compound is a compound in which two aminophenyl groups are bonded to each other through the phenyl groups. For example, 4,4'-diaminobiphenyl, 4,4'-diamino-2,2'-bis(trifluoromethyl)biphenyl, and the like.

A diaminodiphenyl compound is a compound in which two aminophenyl groups are bonded to each other via another group. Bonds include ether bonds, sulfonyl bonds, thioether bonds, alkylene or derivative groups thereof, imino bonds, azo bonds, phosphine oxide bonds, amide bonds, ureylene bonds, and the like. The alkylene bond has about 1 to 6 carbon atoms, and its derivative group is one in which one or more hydrogen atoms of the alkylene group are substituted with a halogen atom or the like.

Examples of diaminodiphenyl compounds include 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3'-diaminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfone, 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl sulfide, 3,3'-diaminodiphenyl ketone , 3,4'-diaminodiphenylketone, 2,2-bis(p-aminophenyl)propane, 2,2'-bis(p-aminophenyl)hexafluoropropane, 4-methyl-2,4-bis( p-aminophenyl)-1-pentene, 4-methyl-2,4-bis(p-aminophenyl)-2-pentene, iminodianiline, 4-methyl-2,4-bis(p-aminophenyl) Pentane, bis(p-aminophenyl)phosphine oxide, 4,4'-diaminoazobenzene, 4,4'-diaminodiphenylurea, 4,4'-diaminodiphenylamide, 1,4-bis(4-aminophenoxy)benzene , 1,3-bis(4-aminophenoxy)benzene, 1,3-bis(3-aminophenoxy)benzene, 4,4'-bis(4-aminophenoxy)biphenyl, bis[4-(4-aminophenoxy) ) phenyl] sulfone, bis[4-(3-aminophenoxy)phenyl]sulfone, 2,2-bis[4-(4-aminophenoxy)phenyl]propane, 2,2-bis[4-(4-aminophenoxy) ) phenyl]hexafluoropropane and the like.

Among these, p-phenylenediamine, m-phenylenediamine, 2,4-diaminotoluene, and 4,4'-diaminodiphenyl ether are preferred in terms of price, availability, etc.

The diaminodiphenyl compound has two aminophenyl groups and one phenylene group bonded via other groups, and the other groups are selected from the same groups as in the diaminodiphenyl compound. Examples of diaminotriphenyl compounds include 1,3-bis(m-aminophenoxy)benzene, 1,3-bis(p-aminophenoxy)benzene, 1,4-bis(p-aminophenoxy)benzene, etc. be able to.

Examples of diaminonaphthalene include 1,5-diaminonaphthalene and 2,6-diaminonaphthalene.

Examples of aminophenylaminoindan include 5- or 6-amino-1-(p-aminophenyl)-1,3,3-trimethylindane.

Examples of diaminotetraphenyl compounds include 4,4'-bis(p-aminophenoxy)biphenyl, 2,2'-bis[p-(p'-aminophenoxy)phenyl]propane, 2,2'-bis[ Examples include p-(p'-aminophenoxy)biphenyl]propane and 2,2'-bis[p-(m-aminophenoxy)phenyl]benzophenone.

Examples of cardo-type fluorenediamine derivatives include 9,9-bisanilinefluorene.

The aliphatic diamine preferably has, for example, about 2 to 15 carbon atoms, and specific examples thereof include pentamethylene diamine, hexamethylene diamine, heptamethylene diamine, and the like.

Note that the diamine may be a compound in which the hydrogen atom is substituted with at least one substituent selected from the group such as a halogen atom, a methyl group, a methoxy group, a cyano group, and a phenyl group.

There are no particular limitations on the means for producing the polyamic acid used in this embodiment, and any known method can be used, such as reacting an acid and a diamine component in an organic solvent.

The reaction between tetracarboxylic dianhydride and diamine is usually carried out in an organic solvent. The organic solvent used in the reaction between the tetracarboxylic dianhydride and the diamine is particularly suitable as long as it can dissolve the tetracarboxylic dianhydride and the diamine and does not react with the tetracarboxylic dianhydride and the diamine. Not limited. Organic solvents can be used alone or in combination of two or more.

Examples of organic solvents used in the reaction between tetracarboxylic dianhydride and diamine include N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylformamide, and , N-diethylformamide, N-methylcaprolactam, N,N,N',N'-tetramethylurea, and other nitrogen-containing polar solvents; β-propiolactone, γ-butyrolactone, γ-valerolactone, δ-valerolactone , γ-caprolactone, ε-caprolactone and other lactone polar solvents; dimethyl sulfoxide; acetonitrile; fatty acid esters such as ethyl lactate and butyl lactate; diethylene glycol dimethyl ether, diethylene glycol diethyl ether, dioxane, tetrahydrofuran, methyl cellosolve acetate, ethyl cellosolve Examples include ethers such as acetate; phenolic solvents such as cresols. These organic solvents can be used alone or in combination of two or more. Although there is no particular restriction on the amount of organic solvent used, it is desirable that the content of the polyamic acid produced is 5 to 50% by mass.

Among these organic solvents, nitrogen-containing polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, N-methylcaprolactam, and N,N,N',N'-tetramethylurea are preferred due to the solubility of the resulting polyamic acid.

The polymerization temperature is generally -10 to 120°C, preferably 5 to 30°C. The polymerization time varies depending on the raw material composition used, but is usually 3 to 24 hours. Further, the intrinsic viscosity of the organic solvent solution of polyamic acid obtained under such conditions is preferably in the range of 1,000 to 100,000 cP (centipoise), and even more preferably in the range of 5,000 to 70,000 cP.

<Polyimide>
The polyimide used in this embodiment is not limited to its structure or molecular weight, and any known polyimide can be used as long as it is a soluble polyimide that can be dissolved in the organic solvent used in the coating liquid L. The polyimide may have a condensable functional group such as a carboxy group or a functional group that promotes a crosslinking reaction during baking in the side chain.

In order to make the polyimide soluble in organic solvents, use of monomers to introduce a flexible bent structure into the main chain, such as ethylenediamine, hexamethylenediamine, 1,4-diaminocyclohexane, 1,3-diaminocyclohexane, Aliphatic diamines such as 4,4'-diaminodicyclohexylmethane; 2-methyl-1,4-phenylenediamine, o-tolidine, m-tolidine, 3,3'-dimethoxybenzidine, 4,4'-diaminobenzanilide, etc. Aromatic diamine; polyoxyalkylene diamine such as polyoxyethylene diamine, polyoxypropylene diamine, polyoxybutylene diamine; polysiloxane diamine; 2,3,3',4'-oxydiphthalic anhydride, 3,4,3' , 4'-oxydiphthalic anhydride, 2,2-bis(4-hydroxyphenyl)propanedibenzoate-3,3',4,4'-tetracarboxylic dianhydride, and the like are effective. Also, the use of monomers with functional groups that improve solubility in organic solvents, such as 2,2'-bis(trifluoromethyl)-4,4'-diaminobiphenyl, 2-trifluoromethyl-1,4 - It is also effective to use fluorinated diamines such as phenylene diamine. Furthermore, in addition to the monomers for improving the solubility of the polyimide, the same monomers as those listed in the polyamic acid column can also be used in combination, within a range that does not inhibit the solubility.

There are no particular limitations on the means for producing the polyimide that is soluble in an organic solvent, which is used in this embodiment. Can be used. Examples of such polyimides include aliphatic polyimides (fully aliphatic polyimides), aromatic polyimides, and the like, with aromatic polyimides being preferred. The aromatic polyimide is obtained by thermally or chemically ring-closing a polyamic acid having a repeating unit represented by formula (1), or by dissolving a polyimide having a repeating unit represented by formula (2) in a solvent. good. In the formula, Ar represents an aryl group.

<Polyamideimide>
As the polyamide-imide used in this embodiment, any known polyamide-imide can be used without being limited to its structure or molecular weight as long as it is a soluble polyamide-imide that can be dissolved in the organic solvent used in the coating liquid L. The polyamide-imide may have a condensable functional group such as a carboxy group or a functional group that promotes crosslinking reaction during firing in the side chain.

The polyamide-imide used in this embodiment can be obtained by reacting any trimellitic anhydride with a diisocyanate, or imide a precursor polymer obtained by reacting any reactive derivative of trimellitic anhydride with a diamine. It is possible to use the obtained product without any particular limitation.

Examples of the above-mentioned arbitrary trimellitic anhydride or its reactive derivative include trimellitic anhydride, trimellitic anhydride halides such as trimellitic anhydride chloride, trimellitic anhydride esters, and the like.

Examples of the diisocyanate include metaphenylene diisocyanate, p-phenylene diisocyanate, 4,4'-oxybis(phenylisocyanate), 4,4'-diisocyanate diphenylmethane, bis[4-(4-isocyanatophenoxy)phenyl]sulfone, 2, Examples include 2'-bis[4-(4-isocyanatophenoxy)phenyl]propane.

As the diamine, the same ones as those exemplified in the explanation of the polyamic acid can be mentioned.

<Polyamide>
As the polyamide, a polyamide obtained from a dicarboxylic acid and a diamine is preferable, and an aromatic polyamide is particularly preferable.

Dicarboxylic acids include maleic acid, fumaric acid, itaconic acid, methylmaleic acid, dimethylmaleic acid, phenylmaleic acid, chloromaleic acid, dichloromaleic acid, fluoromaleic acid, phthalic acid, isophthalic acid, terephthalic acid, and diphenic acid. etc.

As the diamine, the same ones as those exemplified in the explanation of the polyamic acid can be mentioned.

Next, the fine particles B will be described.
<Microparticles>
The fine particles B used have, for example, a high sphericity. Such fine particles B are preferable in that they are easy to form curved surfaces on the inner surfaces of the holes in the resin film 40. The particle size (average diameter) of the fine particles B can be set to, for example, about 100 to 2000 nm. By using the fine particles B as described above, the pore size of the resin film 40 obtained by removing the fine particles B in a later process can be made uniform. In addition, the particle size and content of the fine particles B can be appropriately adjusted to achieve a desired porosity.

The material of the fine particles B is not particularly limited and may be any known material as long as it is insoluble in the solvent contained in the coating liquid L and can be removed from the dry film D described later in a later step. can be adopted. For example, examples of inorganic materials include metal oxides such as silica (silicon dioxide), titanium oxide, and alumina (Al ₂ O ₃ ). Examples of organic materials include organic polymer fine particles such as high molecular weight olefins (polypropylene, polyethylene, etc.), polystyrene, epoxy resins, cellulose, polyvinyl alcohol, polyvinyl butyral, polyester, polymethyl methacrylate, polyether, and the like. Examples of the fine particles B include colloidal silica such as (monodisperse) spherical silica particles, calcium carbonate, and the like. In this case, the pore diameter of the resin film 40 can be made more uniform. The fine particles B contained in the coating liquid L have a particle size of, for example, 100 to 2000 nm.

Next, the solvent will be explained.
<Solvent>
The solvent is not particularly limited, and any known solvent can be used as long as it dissolves polyamic acid, polyimide, polyamideimide, or polyamide. Examples of the solvent include N,N-dimethylacetamide, N,N-diethylacetamide, N,N-dimethylformamide, N,N-diethylformamide, N,N,N',N'-tetramethylurea, N- Nitrogen-containing polar solvents such as vinyl-2-pyrrolidone; sulfoxide solvents such as dimethyl sulfoxide; acetonitrile; fatty acid esters such as ethyl lactate and butyl lactate; tetrahydrofuran, dioxane, dioxolane, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, methyl cellosolve acetate and ethers such as ethyl cellosolve acetate. One type of these may be used, or two or more types may be used in combination.

In addition to the above solvents, the solvent may contain a high boiling point solvent having a boiling point of 190°C or higher. Examples of high boiling point solvents include nitrogen-containing polar solvents such as N-methyl-2-pyrrolidone and N-ethyl-2-pyrrolidone; lactone-based polar solvents such as γ-butyrolactone, γ-valerolactone, δ-valerolactone, γ-caprolactone, and ε-caprolactone; phenol-based solvents such as pyrrolidonephenol, o-, m-, or p-cresol, xylenol, and catechol; and sulfoxide-based solvents such as diethyl sulfoxide. As the high boiling point solvent, one of these may be used, or two or more may be used in combination.

The content ratio of the high boiling point solvent in the solvent is not particularly limited, and a wide range of content can be used. In the solvent, the content of the high boiling point solvent is preferably 5 to 80% by mass, more preferably 7 to 70% by mass, and most preferably 10 to 60% by mass. If the high boiling point solvent is contained in an amount of 5% by mass or more, there will be no problem with the film formability or physical properties of the porous polyimide film, and if it is 80% by mass or less, the coating and prebaking steps can be performed without any problem.

The coating liquid L contains a predetermined resin material 45, fine particles B, a solvent, and, if necessary, various additives such as a mold release agent, a dispersant, a condensing agent, an imidizing agent, and a surfactant. May contain.

Next, the base material F will be explained.
<Base material>
The base material F is, for example, a resin sheet such as polyethylene terephthalate (PET), but is not limited to a resin sheet, and may be a sheet made of a metal material such as stainless steel.

As shown in FIG. 6A, the above-mentioned coating liquid L is applied onto the base material F and dried to remove the solvent in the coating liquid L to form a dry film D. To explain in detail, when applying the coating liquid L onto the base material F, for example, the coating liquid L is discharged toward the surface of the base material F from a not-shown nozzle. By changing the discharge amount per unit time from the nozzle or the relative movement speed between the nozzle and the substrate S, it is possible to adjust the thickness of the dry film D (that is, adjust the thickness of the resin film 40). . Here, the coating liquid L contains fine particles B. Next, the coating liquid L applied onto the base material F is heat-treated (prebaked) at 50 to 100° C. under normal pressure or vacuum to form a dry film D.

Subsequently, as shown in FIG. 6B, the dried film D after the prebaking process is peeled off from the base material F. The peeling method is not particularly limited, and may be performed automatically using a manipulator or the like, or may be performed manually by an operator. Subsequently, the dried film D after peeling is fired. Note that, before firing, in order to suppress the occurrence of curls in the dry film D, immersion treatment in a solvent containing water, pressing treatment, etc. may be optionally performed. Further, a drying treatment may be optionally provided after the immersion treatment.

The firing temperature of the dry film D is, for example, about 120 to 400°C, and preferably about 150 to 350°C. Further, when the fine particles B contain an organic material, the temperature needs to be set lower than the temperature at which the fine particles B are thermally decomposed. In addition, when the coating liquid L contains polyamic acid, it is preferable to complete imidization in this baking, but this does not apply when the dry film D is composed of polyimide, polyamide-imide, or polyamide.

Subsequently, the resin film 40 is manufactured by removing the fine particles B from the dried film D after firing. For example, when silica is used as the fine particles B, it is possible to make the dry membrane D porous by dissolving and removing the silica with low concentration hydrogen fluoride (HF) or the like. In addition, when the fine particles B are resin fine particles, the dry film D is heated to a temperature higher than the thermal decomposition temperature of the resin fine particles and lower than the thermal decomposition temperature of polyimide as described above to thermally decompose the resin fine particles and remove them. Can be done.

As shown in FIG. 6C, the portions from which the fine particles B are removed from the dry film D become pores 44, and the pores 44 communicate with each other to form the resin film 40 having the pores 43. Therefore, the resin film 40 becomes a porous resin film having air permeability. The resin film 40 has a uniform porosity in the plane direction (X direction and Y direction).

Subsequently, the resin film 40 is subjected to an etching (chemical etching) process. As shown in FIG. 7A, the resin film 40 is immersed in the etching solution L2, and a portion of the resin material 45 in the voids 43 is removed. As the etching liquid L2, a chemical etching liquid such as an inorganic alkaline solution or an organic alkaline solution is used.

Examples of inorganic alkaline solutions include hydrazine solutions containing hydrazine hydrate and ethylenediamine, solutions of alkali metal hydroxides such as potassium hydroxide, sodium hydroxide, sodium carbonate, sodium silicate, and sodium metasilicate, ammonia solutions, and etching solutions mainly containing alkali hydroxide, hydrazine, and 1,3-dimethyl-2-imidazolidinone. Examples of organic alkaline solutions include alkaline solutions of primary amines such as ethylamine and n-propylamine; secondary amines such as diethylamine and di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide; and cyclic amines such as pyrrole and piheridine. By the etching process, as shown in FIG. 7B, protruding parts such as burrs in the gap 43 are removed, and the breathability of the gap 43 is improved.

After that, the resin film 40 is washed with a cleaning liquid and the liquid is drained. Subsequently, the resin film 40 after draining is heated to, for example, about 100 to 400°C (preferably about 100 to 300°C) to remove the cleaning liquid. Note that the porous resin film 40 after etching may be wound up by a winding device (not shown) or the like to form a roll body (not shown). Further, the size of the roll body can be adjusted depending on the purpose of use by pulling out the resin film 40, cutting it to the length to be used, and then winding it up again to form a roll body. . Note that it is optional whether or not to perform the above-described etching process, and it is not necessary to perform the etching process.

FIG. 8 is a cross-sectional view showing another example of the resin film 40A according to the embodiment. In this resin film 40A, an antistatic film 46 is formed on the first contact surface 41. The resin film 40 used in the scribing device 1 according to this embodiment can be used alone, but the first contact surface 41 may be coated with an antistatic film 46 containing an antistatic agent. In this case, since the antistatic film 46 is in direct contact with the lower surface S2 of the substrate S, the friction coefficient of the upper surface of the antistatic film 46, that is, the surface in contact with the lower surface S2 of the substrate S, was determined by the pin-on-disk test. is preferably 1.0 or less.

The antistatic film 46 can be formed on the first contact surface 41 using known thin film formation techniques. For example, a method of applying a liquid antistatic agent to the first contact surface 41, physical vapor deposition, chemical vapor deposition, or other techniques can be used. Any known antistatic agent can be used as the antistatic agent, and examples of such agents include antistatic agents containing glycerin fatty acid ester and benzotriazole. The antistatic film 46 may be formed on the second contact surface 42, or on both the first contact surface 41 and the second contact surface 42.

<Scribe method>
Next, a method for scribing the substrate S will be explained. FIG. 9 is a flowchart illustrating an example of a method for scribing the substrate S according to the embodiment. 10 to 14 are diagrams showing one step of the scribing method according to the embodiment. In these process drawings, some descriptions are omitted or simplified to make it easier to understand the movements of each part. Hereinafter, the process will be explained along the flowchart of FIG.

First, the resin film 40 is placed on the upper surface 11 of the substrate support section 10 (step S01). As shown in FIG. 10A, the resin film 40 is arranged on the upper surface 11 of the substrate support part 10 so as to cover the plurality of suction holes 13. When placing the resin film 40, for example, an operator may manually place the resin film 40 while pulling out the resin film 40 wound into a roll and cutting it into a predetermined size. Subsequently, the substrate S is placed on the resin film 40 (step S02). As shown in FIG. 10B, the substrate S is placed on the first contact surface 41, which is the upper surface of the resin film 40. The substrate S may be placed by various conveyance devices capable of conveying the substrate S, or may be placed manually by an operator.

Next, the substrate S is fixed to the substrate support part 10 by vacuum suction (step S03). In step S02, the resin film 40 and the substrate S are placed on the upper surface 11 of the substrate support section 10. When step S02 is completed, the control unit 50 drives the suction device 32 to start suctioning the resin film 40 and the substrate S. By driving the suction device 32, each of the plurality of suction holes 13 starts suctioning through the suction tube 31 and the space 12, and the resin film 40 is attracted to the upper surface 11. Furthermore, since the resin film 40 has the void 43, it attracts the lower surface S2 of the substrate S through the void 43. As a result, as shown in FIG. 11A, the substrate S is suctioned and fixed to the substrate support part 10 together with the resin film 40.

Subsequently, a scribing process is performed on the processed surface S1 of the substrate S (step S04). First, the control unit 50 drives the drive unit 22 at a position away from the substrate S to maintain the processing head 21 at a predetermined height. The height of the processing head 21 is set such that the blade portion 23a of the tool 23 bites into the processed surface S1 of the substrate S by a predetermined amount. Subsequently, the control unit 50 forms a scribe line LX on the processed surface S1 of the substrate S by moving the processing head 21 (tool 23) in the +X direction, as shown in FIG. 11B. That is, by moving the tool 23 in the X direction and sliding the blade portion 23a on the processed surface S1, the scribe line LX, which is a groove in the X direction, is formed. Note that the groove portion of the scribe line LX, which is a recess formed by plastic deformation, may be referred to as a trench line.

In step S04, the substrate S is placed on the resin film 40, which has a hardness of 1.6 to 33.5 N/mm ² by nanoindentation. Therefore, even when the tool 23 moves in the X direction or the Y direction, the substrate S does not sink (or sinks to a small extent), and appropriate scribe lines LX and LY can be formed. That is, it is possible to reduce defects in dividing the substrate S due to defective formation of the scribe lines LX and LY, and improve the cutting yield of the component SS.

As shown in FIG. 12, a plurality of scribe lines LX are formed in parallel on one substrate S. The intervals in the Y direction between the plurality of scribe lines LX are set in advance as virtual lines MLX based on the dimensions of the desired component SS. In addition, when moving the processing head 21 (tool 23) in the +Y direction, for example, the substrate support part 10 is rotated 90 degrees within the XY plane, and the processing head 21 ( The tool 23) is moved to form a scribe line LY, which is a groove in the Y direction. As shown in FIG. 12, a plurality of scribe lines LY are formed in parallel on one substrate S. The intervals in the X direction between the plurality of scribe lines LY are set in advance as a virtual line MLY based on the dimensions of the desired component SS.

As for the order in which the plurality of scribe lines LX and LY are formed, for example, the plurality of scribe lines LX may be formed first, and then the plurality of scribe lines LY may be formed, or conversely, the plurality of scribe lines LX and LY may be formed first. After forming the line LY, a plurality of scribe lines LX may be formed. Alternatively, the scribe lines LX and scribe lines LY may be alternately formed. In addition, when using a tool that rolls the blade portion instead of the tool 23 that slides the blade portion 23a, the tool is held with the rolling blade portion biting into the workpiece surface S1 by a predetermined amount. By moving the blade in the X direction or the Y direction, groove-shaped scribe lines LX and LY are formed while the blade portion rolls.

As shown in FIG. 13, the scribe lines LX and LY are accompanied by a crack line CL, which is a vertical crack that continues from the trench line TL and progresses in the -Z direction (thickness direction), in addition to the trench line TL, which is a groove portion. The crack line CL may be formed at the same time as the trench line TL, or may be formed below the trench line TL after the trench line TL is formed. The length of the crack line CL in the thickness direction varies depending on the depth of the trench line TL (the amount of penetration of the blade portion 23a, or the downward pressing force of the tool 23), the material of the substrate S, etc.

Next, the substrate S is divided (step S05). Such division of the substrate S may be referred to as a breaking process. For example, as shown in the upper diagram of FIG. 13, by applying bending stress F along the scribe lines LX and LY, the substrate S can be divided to form a plurality of parts SS. In this case, it is preferable to apply stress F along the scribe lines LX and LY from the lower surface S2 side of the substrate S so as to open the crack line CL formed on the processed surface S1 of the substrate S. As a result, as shown in the lower diagram of FIG. 13, the entire crack line CL of the substrate S extends downward from the scribe lines LX and LY to the lower surface S2 of the substrate S, and is divided into a plurality of parts SS. The division of the substrate S as shown in FIG. 13 may be performed, for example, by bending the substrate S by hand by an operator, or by a known method including a break bar that comes into contact with the lower surface S2 along the scribe lines LX and LY. This may be done by using a cutting device.

Next, the divided parts SS are taken out (step S06). The component SS is taken out using the pickup device 60, for example. As shown in FIG. 14, the pickup device 60 includes a support section 61 and a suction pad 62. The support part 61 is a tubular member extending in the vertical direction, and has a suction pad 62 at its lower end, and its upper end is connected to a suction device (not shown). The support section 61 is movable in the X direction, Y direction, and Z direction by a drive section (not shown). The suction pad 62 has a truncated conical shape that expands in diameter from the lower end of the support portion 61 and has a suction space inside. The suction pad 62 contacts the cut out component SS at the lower end and suctions the component SS. The operation of the pickup device 60 is controlled by, for example, the control unit 50 (see FIG. 1).

To take out the component SS, first, the control unit 50 stops driving the suction device 32 and releases the substrate S from being held by the substrate support unit 10. Subsequently, the suction pad 62 is moved above the component SS to be taken out. In FIG. 14, the component SS1 on the right side (+X side) is to be taken out. Subsequently, the suction pad 62 is lowered, and when the suction pad 62 contacts the upper surface of the component SS1, a suction device (not shown) is driven to cause the suction pad 62 to suction the component SS. Subsequently, the component SS1 attracted to the suction pad 62 is moved by a small distance in +X direction. That is, the component SS1 is moved so as to separate the component SS1 from the component SS2 on the left side (-X side).

At this time, since the friction coefficient of the first contact surface 41 of the resin film 40 is 1.0 or less in the pin-on-disc test, the resin film 40 has good slipperiness and can move the component SS1 smoothly. In step S06, the drive of the suction device 32 is stopped, and the substrate S (component SS) is simply placed on the resin film 40. As described above, since the first contact surface 41 of the resin film 40 has good sliding properties, it is possible to prevent the resin film 40 from twisting while moving the component SS1 smoothly. In addition, when taking out part SS1, by first separating part SS1 from the neighboring part SS2, when part SS1 is lifted as it is, it will catch the neighboring part SS2, causing damage to the remaining parts SS including part SS2, and positional changes. etc. can be avoided.

After moving the component SS1 to the +X side, the component SS1 can be taken out by raising the suction pad 62. The taken out part SS1 is placed at a predetermined position or in a tray. In step S06, by repeating this operation for a plurality of parts SS, each of the plurality of parts SS can be taken out. The series of processing ends when the removal of the plurality of parts SS is completed. Note that after the component SS is taken out, the resin film 40 remains on the board support part 10, but this resin film 40 is left on the board support part 10 and is reused in the scribing process of the next board S. It's okay.

Although the pickup device 60 is used in step S06 described above, the pick-up device 60 is not limited to this form, and the operator may manually use suction tweezers, for example. Even in this case, the component SS1 is moved a little from the component SS2 before being lifted, and the movement of the component SS1 becomes smooth, so that the component SS can be easily taken out.

As described above, according to the present embodiment, since the resin film 40 has air permeability, the substrate S can be sucked through the resin film 40, and the substrate S can be held by the substrate support part 10. Can be done. Therefore, it is possible to save the effort of fixing the resin film 40 and the substrate S with tape or the like. Further, the hardness of the resin film 40 measured by the nanoindentation method is 1.6 to 33.5 N/mm ² , and the friction coefficient of the first contact surface 41 of the resin film 40 measured by the pin-on-disc test is 1.0 or less. Therefore, the component SS obtained from the substrate S can be easily shifted laterally, and a plurality of components SS can be appropriately taken out.

Examples will be described below.
[Example 1]
A coating solution was prepared by mixing 12% by weight of polyimide, 18% by weight of silica having a particle size of 2500 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. After that, it was dried at 80° C. for 5 minutes, and then the base material was peeled off to form a resin film. Subsequently, the resin film was baked at 380° C. for 10 minutes. After baking, the resin film was immersed in an etching solution of tetramethylammonium hydroxide for 7 minutes, and then washed with a cleaning solution. Subsequently, a resin film was manufactured by heating the resin film at 60° C. for 2 minutes to remove the cleaning liquid. The produced resin film had a pore size of 2500 nm, a porosity of 60%, and a film thickness of 25 μm.

[Example 2]
A coating solution was prepared by mixing 12% by weight of polyimide, 18% by weight of silica having a particle size of 2500 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. Thereafter, a resin film was produced in the same manner as in Example 1. The upper surface of the produced resin film was coated with 10 ml of a liquid containing benzotriazole as an antistatic agent to form an antistatic film. The produced resin film had a pore size of 2500 nm, a porosity of 60%, and a film thickness of 25 μm.

[Example 3]
A coating liquid was prepared by mixing 13.5% by weight of polyimide, 16.5% by weight of silica having a particle size of 300 to 2000 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. Thereafter, a resin film was produced in the same manner as in Example 1. The produced resin film had a pore size of 300 to 2000 nm, a porosity of 55%, and a film thickness of 25 μm.

[Comparative example 1]
A coating liquid was prepared by mixing 9% by weight of polyimide, 21% by weight of silica having a particle size of 2500 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. Thereafter, a resin film was produced in the same manner as in Example 1. The produced resin film had a pore size of 2500 nm, a porosity of 70%, and a film thickness of 40 μm.

[Comparative example 2]
A coating liquid was prepared by mixing 9% by weight of polyimide, 21% by weight of silica having a particle size of 1000 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. Thereafter, a resin film was produced in the same manner as in Example 1. The produced resin film had a pore size of 1000 nm, a porosity of 70%, and a film thickness of 40 μm.

[Comparative example 3]
A coating liquid was prepared by mixing 9% by weight of polyimide, 21% by weight of silica having a particle size of 300 nm as fine particles, and 70% by weight of dimethylacetamide as an organic solvent. This coating liquid was applied to the surface of a 20 cm x 30 cm base PET to form a coating film. Thereafter, a resin film was produced in the same manner as in Example 1. The produced resin film had a pore size of 300 nm, a porosity of 70%, and a film thickness of 40 μm.

The porosity of each resin film was determined using the following formula.
The weight and volume of each sample piece were measured, and the porosity was determined by the following method.
Porosity (%) = {[weight of sample piece (g)/volume of sample piece (cm ³ )]/specific gravity of polyamide resin (g/cm ³ )}×100

The hardness of each resin film was measured using the nanoindentation method. In addition, the resin films of Examples 1 to 3 and Comparative Examples 1 to 3 were respectively placed on the substrate support section provided with the suction device, and the glass substrate was placed on the resin film to form a glass substrate of 15 mm× It was cut to 80 mm and the cutting yield was evaluated. The results are shown in FIG. 15. Here, in the cutting yield evaluation, when the yield of glass parts that could be cut without cracks was 95% or more, it was evaluated as ○, and when it was less than 95%, it was evaluated as ×. As shown in Examples 1 to 3 and Comparative Examples 1 to 3 in FIG. 15, when the hardness of the resin film was 1.6 to 33.5 N/mm ² , the cutting yield of the glass plate was 95% or more.

Furthermore, the friction coefficient of the resin film was measured using a pin-on-disc test. In addition, removal evaluation was performed to see whether the divided glass parts could be taken out upward by manually sliding them laterally from each resin film. The results are shown in FIG. Here, for the extraction evaluation, the case where the divided glass part could be taken out appropriately with suction tweezers was evaluated as ○, and the case where it was not possible was evaluated as ×. Examples of cases where the glass component cannot be taken out include cases where the glass component cannot be moved laterally and gets caught on another glass component, or cases where the glass component cannot be peeled off from the resin film. As shown in Examples 1 to 3 and Comparative Examples 1 to 3 in FIG. 15, when the coefficient of friction on the upper surface of the resin film was 1.0 or less, the glass component could be taken out appropriately.

According to the results shown in Figure 15, when the resin film has a hardness of 1.6 to 33.5 N/mm ² by the nanoindentation method and a friction coefficient of 1.0 or less by the pin-on-disk test, it is difficult to cut. It was confirmed that the yield was improved and the ease of extraction was improved. In addition, as in Examples 1 to 3, if the resin film has a hardness of 5.17 to 33.36 N/mm ² by the nanoindentation method and a friction coefficient of 0.845 or less by the pin-on-disk test, It was confirmed that both the cutting yield and the take-out evaluation were good.

Although the embodiments and examples have been described above, the technical scope of the present invention is not limited to the embodiments and examples described above. It will be apparent to those skilled in the art that various changes or improvements can be made to the embodiments and examples described above. Furthermore, forms with such changes or improvements are also included within the technical scope of the present invention. One or more of the requirements described in the embodiments and examples above may be omitted. Furthermore, the requirements described in the above-described embodiments and examples can be combined as appropriate. Furthermore, the operations shown in the embodiments and examples can be executed in any order as long as the result of the previous operation is not used in the subsequent operation. Further, even if the operations in the embodiments and examples described above are described using "first", "next", "successively", etc. for convenience, it is not essential that they be performed in this order.

Furthermore, in the above-described embodiment, the scribing device 1 exemplifies a mode in which the scribing process of the substrate S is performed by moving the processing head 21 (tool 23) relative to the substrate S. Not limited to form. For example, the substrate S (substrate support 10) may move relative to the processing head 21 (tool 23), or both the processing head 21 and the substrate S may move.

Further, in the above-described embodiment, a mode in which one resin film 40 is disposed between the substrate S and the substrate support section 10 is described as an example, but the present invention is not limited to this mode. For example, two or more resin films 40 may be arranged between the substrate S and the substrate support section 10. In this case, the same resin film 40 may be used for the plurality of resin films 40, or different resin films 40 may be used.
Further, in the above-described embodiments, a mode in which transport is not included between the scribing process and the dividing process is exemplified and explained, but the present invention is not limited to this mode. For example, a configuration may be adopted in which a step of transporting the substrate S is included between the scribing process and the cutting process.

1... Scribing device 10... Substrate support section 11... Top surface 12... Space section 13... Suction hole 20... Processing section 21... Processing head 22... Drive section 23. ...Tool (scribe tool)
30...Reduced pressure suction unit 31...Suction tube 32... Suction device 40, 40A...Resin film 41...First contact surface 42...Second contact surface 43...Gap 44... ...Vacancy 45...Resin material 46...Antistatic film 50...Control unit 60...Pickup device

Claims (10)

1. A resin film disposed between the substrate and the substrate support when scribing the substrate supported by the substrate support,
   having porosity and having air permeability between a first contact surface with the substrate and a second contact surface with the substrate support;
   The hardness by nanoindentation method is 1.6 to 33.5 N/mm ² ,
   A resin film, wherein the first contact surface has a coefficient of friction of 1.0 or less as determined by a pin-on-disc test.
2. The resin film according to claim 1, having a porosity of 50 to 70% and a pore size of 250 to 2,600 nm.
3. The resin film according to claim 1, having a thickness of 20 to 50 μm.
4. The resin film according to claim 1, which is formed of an imide resin.
5. The resin film according to claim 4, wherein the imide resin contains at least one of polyamic acid, polyimide, polyamideimide, and polyamide.
6. The resin film according to claim 1, having an antistatic film on at least one of the first contact surface and the second contact surface.
7. The resin film according to claim 1, wherein the substrate is a glass substrate.
8. The resin film according to claim 7, wherein the glass substrate has a thickness of 100 μm or less.
9. a substrate support part that supports the substrate;
   a processing section that performs scribing on the substrate supported by the substrate support section;
   a resin film disposed between the substrate and the substrate support section;
   a reduced pressure suction unit provided on the substrate support unit and sucking the substrate through the resin film;
   The resin film is
   having porosity and having air permeability between a first contact surface with the substrate and a second contact surface with the substrate support;
   The hardness by nanoindentation method is 1.6 to 33.5 N/mm ² ,
   A scribing device, wherein the first contact surface has a friction coefficient of 1.0 or less as determined by a pin-on-disc test.
10. A method of scribing a substrate, comprising the steps of:
    a step of placing the substrate on a resin film of a substrate support part on which the resin film is placed, and fixing the substrate to the substrate support part by applying reduced pressure through the resin film;
    and moving a scribing tool relative to the substrate to form a scribe line on the substrate,
    The resin film is
    the substrate is porous and has air permeability between a first contact surface with the substrate and a second contact surface with the substrate support;
    The hardness measured by the nanoindentation method is 1.6 to 33.5 N/ ^mm2 ;
    A scribing method, wherein the first contact surface has a coefficient of friction of 1.0 or less in a pin-on-disk test.

Images