Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45512—Premixing before introduction in the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45561—Gas plumbing upstream of the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45574—Nozzles for more than one gas
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45576—Coaxial inlets for each gas
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45578—Elongated nozzles, tubes with holes
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates

Definitions

• This aspect relates to a substrate processing apparatus, a nozzle, a method for manufacturing a semiconductor device, and a program.
• a substrate processing apparatus that processes a plurality of substrates at once is used (for example, Japanese Patent Application Publication No. 2011-129879).
• the present disclosure provides a technique that can uniformly process the surface of a substrate.
• a nozzle includes a processing chamber for processing a substrate, a plurality of gas introduction parts for introducing gas into the processing chamber, and a communication part for partially communicating the gas introduction parts. , a plurality of gas supply units that supply gas to the gas introduction unit.
• FIG. 1 is a vertical cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.
• 1 is a horizontal cross-sectional view showing a schematic configuration example of a substrate processing apparatus according to one embodiment of the present disclosure.
• 1 is a vertical cross-sectional view along a gas flow showing a schematic configuration example of a gas supply structure and a nozzle of a substrate processing apparatus according to one embodiment of the present disclosure.
• FIG. 2 is a longitudinal cross-sectional view of the nozzle taken perpendicular to the gas flow.
• FIG. 2 is a perspective view showing a gas rectifying member of a substrate processing apparatus according to one embodiment of the present disclosure.
• FIG. 2 is a longitudinal cross-sectional view showing a substrate support according to one aspect of the present disclosure.
• FIG. 2 is an explanatory diagram illustrating gases that can be used in one embodiment of the present disclosure.
• FIG. 2 is an explanatory diagram illustrating gases that can be used in one embodiment of the present disclosure.
• FIG. 2 is an explanatory diagram illustrating gases that can be used in one embodiment of the present disclosure.
• FIG. 2 is an explanatory diagram illustrating a controller of a substrate processing apparatus according to one aspect of the present disclosure.
• FIG. 2 is a flow diagram illustrating a substrate processing flow according to one aspect of the present disclosure.
• FIG. 7 is a perspective view showing a gas rectifying member according to another aspect of the present disclosure.
• FIG. 1 is a side sectional view of the substrate processing apparatus 100
• FIG. 2 is a sectional view along ⁇ - ⁇ ' in FIG.
• FIG. 3 is an explanatory diagram illustrating the relationship among the gas supply structure 212, the nozzle 227, the reaction tube 210, and the heater 211.
• the substrate processing apparatus 100 has a housing 201, and the housing 201 includes a reaction tube storage chamber 206 and a transfer chamber 217.
• the reaction tube storage chamber 206 is arranged above the transfer chamber 217.
• the reaction tube storage chamber 206 includes a cylindrical reaction tube 210 extending in the vertical direction, a heater 211 as a heating section (for example, a furnace body) installed on the outer periphery of the reaction tube 210, and a gas supply chamber for supplying gas. It includes a structure 212, a nozzle 227, and a gas exhaust structure 213 for exhausting gas.
• the reaction tube 210 is also called a processing chamber, and the space inside the reaction tube 210 is also called a processing space.
• the reaction tube 210 is capable of storing a substrate support 300, which will be described later.
• a resistance heater is provided on the inner surface facing the reaction tube 210 side, and a heat insulating section is provided to surround them. Therefore, the structure is such that the outside of the heater 211, that is, the side that does not face the reaction tube 210, is less affected by heat.
• a heater control section (not shown) is electrically connected to the resistance heater of the heater 211 .
• the heater control unit can control on/off of the heater 211 and the heating temperature.
• the heater 211 can heat a gas, which will be described later, to a temperature at which it can be thermally decomposed. Note that the heater 211 is also called a processing chamber heating section or a first heating section.
• the gas supply structure 212 and the nozzle 227 are provided upstream of the reaction tube 210 in the gas flow direction, and gas is supplied horizontally to the reaction tube 210 from the gas supply structure 212 and the nozzle 227.
• the gas exhaust structure 213 is provided downstream of the reaction tube 210 in the gas flow direction, and gas within the reaction tube 210 is exhausted from the gas exhaust structure 213.
• the gas supply structure 212 and the nozzle 227 are fixed so as to be separable.
• a downstream rectifier 215 is provided between the reaction tube 210 and the gas exhaust structure 213 to adjust the flow of gas discharged from the reaction tube 210.
• the lower end of the reaction tube 210 is supported by a manifold 216.
• the reaction tube 210, the nozzle 227, and the downstream rectifier 215 have a continuous structure, and are made of, for example, a material such as quartz or SiC. These are made of a heat-transparent member that transmits the heat radiated from the heater 211. The heat from the heater 211 heats the substrate S and gas used in the semiconductor device.
• the gas supply structure 212 is provided at the back of the nozzle 227 when viewed from the reaction tube 210. As shown in FIG. 2, the gas supply structure 212 includes a distribution section 222 that can communicate with a gas supply pipe 251, which will be described later, and a distribution section 224 that can communicate with a gas supply pipe 261. Note that the distribution section 222 and the distribution section 224 are vertically long passages, and because they can distribute gas to each nozzle 227, they are also called gas distribution sections.
• the gas supply structure 212 is provided with distribution portions 222 on both sides in the width direction, and two distribution portions 224 are provided on the center side.
• a part of the downstream side of the gas supply pipe 261 is inserted.
• a plurality of holes 251A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 251, and a plurality of holes 261A for ejecting gas are formed at intervals in the vertical direction on the side of the gas supply pipe 261. It is formed by opening it.
• the holes 251A and 261A can be referred to as openings.
• a plurality of cylindrical nozzles 227 are stacked in the vertical direction, which is the same direction as the substrate S, which will be described later.
• the nozzles 227 are provided in multiple stages in the height direction of the substrate holder, which will be described later. Note that the plurality of nozzles 227 can also be referred to as one nozzle 227 whose interior is vertically divided into a plurality of flow paths.
• blow-off holes 222c communicating with the distribution section 222 are provided at intervals in the vertical direction, and communicating with the distribution section 224.
• Blowout holes 224c are provided at intervals in the vertical direction.
• the nozzle 227 is provided in a straight section 227A that extends linearly from the gas supply structure 212 toward the reaction tube 210, and on the reaction tube 210 side of the straight section 227A, and gradually extends toward the reaction tube 210. 227B. Note that the nozzle 227 can be referred to as a gas ejection member that ejects gas.
• a gas rectifying member 500 is housed inside the nozzle 227.
• the gas rectification member 500 includes one horizontal plate-like member 502 and a plurality of members; in this embodiment, three members are erected on the upper surface of the horizontal plate-like member 502, and three members are erected on the lower surface, for a total of six members.
• Eight gas introduction portions 506 are formed inside the nozzle 227.
• the gas introduction section 506 is a passage through which gas passes. Note that the portion of the nozzle 227 where the gas rectifying member 500 is arranged can be called a gas rectifying section. Further, since the gas rectifying member 500 is configured using the horizontal plate-like member 502 and the vertical plate-like member 504, the resistance to passage of the gas flowing through the nozzle 227 is reduced.
• the vertical plate-like member 504 extends linearly at a portion disposed in the linear portion 227A of the nozzle 227.
• the central vertical plate-like member 504 extends linearly in the same direction as the portion disposed in the straight portion 227A. ing.
• the vertical plate-like members 504 on both sides in the nozzle width direction are provided on the reaction tube 210 side so that the distance from the central vertical plate-like member 504 is widened. It is sloping.
• the inclined vertical plate members 504 on both sides are oriented toward the edge E of the substrate S housed in the reaction tube 210 in the width direction (the same direction as the width direction of the nozzle 227, the direction of the arrow W in FIG. 2). It's sloped. In other words, the vertical plate members 504 on both sides extend outward in the width direction from the upstream side to the downstream side of the flow of processing gas.
• each gas introduction section 506 arranged in the straight section 227A of the nozzle 227 is approximately the same.
• the gas rectifying member 500 is provided with a wall 508 at the end on the gas supply structure 212 side. , and a hole 510 that communicates with the blowout hole 224c.
• the gas rectifying member 500 is provided with walls 512 at the boundary between the straight portion and the inclined portion of the vertical plate member 504, and each wall 512 is provided with a hole 514 through which gas passes. It is formed.
• Two convex portions 502A are formed at each side end portion of the horizontal plate-like member 502 on both sides in the width direction with an interval between them.
• the convex portion 502A is in contact with the inner wall surface of the nozzle 227, so that there is a width between the side end of the horizontal plate member 502 and the inner wall surface of the nozzle 227, as shown in FIG.
• a communication portion 518 of Wa is formed.
• the communication portion 518 may be provided partially between the side end portion of the horizontal plate-like member 502 and the inner wall surface of the nozzle 227.
• the number of convex portions 502A provided on the side end portions of the horizontal plate-like member 502 may be one, or three or more.
• Two protrusions 504A are formed at the side ends of the vertical plate-like member 504 on both sides in the width direction with an interval between them.
• the convex portion 504A is in contact with the inner wall surface of the nozzle 227, so that there is a width between the side end of the vertical plate member 504 and the inner wall surface of the nozzle 227, as shown in FIG.
• a communication portion 520 of Wb is formed.
• the communication portion 520 may be provided partially between the side end portion of the vertical plate member 504 and the inner wall surface of the nozzle 227.
• the number of protrusions 504A provided on the side end portions of the vertical plate-like member 504 may be one, or three or more.
• the four gas introduction parts 506 arranged side by side in the horizontal direction can allow a portion of the gas passing through one gas introduction part 506 to enter from one laterally adjacent gas introduction part 506 to the other gas introduction part 506 via the communication part 520. Also, a portion of the gas passing through one gas introduction part 506 can allow from the other laterally adjacent gas introduction part 506 to enter from one gas introduction part 506 to the other gas introduction part 506 via the communication part 520.
• a part of the gas passing through the upper gas introduction part 506 is transferred from the upper gas introduction part 506 to the lower gas introduction part 506. can enter through the communication portion 518 of the horizontal plate-like member 502. Further, a portion of the gas passing through the lower gas introduction section 506 can enter from the lower gas introduction section 506 to the upper gas introduction section 506 via the communication section 518.
• gas when gas is supplied to the gas inlet parts 506 on both sides in the width direction of the nozzle 227, gas can be ejected from the gas inlet parts 506 on both sides in the width direction toward the substrate S, and also from the two gas inlet parts 506 on the inner side in the width direction toward the substrate S. Since the gas inlet parts 506 are partially communicated with each other by the communication parts 520 so as to form a symmetrical wide flow, and the vertical plate members 504 on both sides spread outward in the width direction from the upstream side to the downstream side of the flow of the processing gas, the gas can be made to flow in a symmetrical wide flow centered on the substrate S.
• the arrows in FIG. 2 indicate the flow of gas. Therefore, the gas supplied from the gas supply structure 212 to the nozzle 227 can be rectified by the gas rectifying member 500 and supplied to the surface of the substrate S.
• the communication portions 518 and 520 can be referred to as gaps or slits.
• the downstream rectifier 215 is configured such that when the substrate S is supported by the substrate support 300, the ceiling is higher than the position of the uppermost substrate S, and The bottom part is configured to be lower than the position of the substrate S placed at the lowest position of the tool 300.
• the downstream rectifying section 215 has a housing 231 and a partition plate 232.
• the portion of the partition plate 232 that faces the substrate S is stretched in the horizontal direction so as to be at least larger in diameter than the substrate S.
• the horizontal direction here refers to the side wall direction of the housing 231.
• a plurality of partition plates 232 are arranged in the vertical direction.
• the partition plate 232 is fixed to the side wall of the housing 231, and is configured to prevent gas from moving beyond the partition plate 232 to an adjacent area below or above. By not exceeding the limit, the gas flow described below can be reliably formed.
• a flange 233 is provided on the side of the housing 231 that contacts the gas exhaust structure 213 .
• the partition plate 232 has a continuous structure without holes.
• the center positions between the partition plates 232 are located at positions corresponding to the substrate S, respectively, and at positions corresponding to the center positions of the nozzles 227 in the vertical direction.
• the gas supplied from each nozzle 227 forms a flow that passes over the substrate S and the partition plate 232, as indicated by the arrows in the figure.
• the partition plate 232 is extended in the horizontal direction and has a continuous structure without holes. With such a structure, the pressure loss of the gas discharged from each substrate S can be made uniform. Therefore, the gas flow passing through each substrate S is formed in the horizontal direction toward the gas exhaust structure 213 while the flow in the vertical direction is suppressed.
• partition plate 232 By providing the partition plate 232 corresponding to the nozzle 227, it is possible to equalize the pressure loss in the vertical direction on the upstream and downstream sides of each substrate S. A horizontal gas flow with suppressed gas flow can be reliably formed.
• the gas exhaust structure 213 is provided downstream of the downstream rectifier 215.
• the gas exhaust structure 213 is mainly composed of a housing 241 and a gas exhaust pipe connection part 242.
• a flange 243 is provided in the housing 241 on the downstream side rectifying section 215 side.
• the gas exhaust structure 213 communicates with the space of the downstream rectifier 215.
• the casing 231 and the casing 241 have a continuous height structure.
• the ceiling of the casing 231 is configured to have the same height as the ceiling of the casing 241, and the bottom of the casing 231 is configured to have the same height as the bottom of the casing 241.
• the gas that has passed through the downstream rectifier 215 is exhausted from the exhaust hole 244.
• the gas exhaust structure does not have a structure such as a partition plate, a gas flow including a vertical direction is formed toward the exhaust hole 244.
• the transfer chamber 217 is installed at the bottom of the reaction tube 210 via a manifold 216.
• a vacuum transfer robot (not shown) horizontally places (for example, mounts) the substrate S on a substrate support (hereinafter also simply referred to as a boat) 300, and a vacuum transfer robot transfers the substrate S. Taking out the substrate from the substrate support 300 is performed.
• a vertical drive mechanism section 400 that constitutes a first drive section that drives a tool (referred to as a tool) in the vertical direction and rotational direction can be stored.
• the substrate holder is shown raised by the vertical drive mechanism 400 and stored in the reaction tube.
• the substrate support unit is composed of at least a substrate support 300, and is used to transfer the substrate S by a vacuum transfer robot through a substrate loading port (not shown) inside the transfer chamber 217, and to transfer the transferred substrate S.
• the substrate S is transported into the reaction tube 210 and subjected to a process of forming a thin film on the surface of the substrate S.
• the substrate support section may include the partition plate support section 310.
• the substrate support 300 has a structure in which a plurality of support rods 315 are supported by a base 311, and a plurality of substrates S are supported by the plurality of support rods 315 at predetermined intervals.
• a plurality of substrates S are horizontally placed on the substrate support 300 at predetermined intervals by a plurality of support rods 315 supported by a base 311.
• the plurality of substrates S supported by the support rods 315 are partitioned by disk-shaped partition plates 314 fixed (for example, supported) at predetermined intervals on pillars 313 supported by the partition plate support 310.
• the partition plate 314 is arranged on either or both of the upper and lower parts of the substrate S.
• the predetermined spacing between the plurality of substrates S placed horizontally on the substrate support 300 is the same as the vertical spacing of the partition plate 314 fixed to the partition plate support 310. Further, the diameter of the partition plate 314 is larger than the diameter of the substrate S.
• the substrate support 300 supports a plurality of substrates S, for example, five substrates S, in multiple stages in the vertical direction using a plurality of support rods 315.
• the base 311 and the plurality of support rods 315 are made of a material such as quartz or SiC, for example. Note that although an example in which five substrates S are supported on the substrate support 300 is shown here, the present invention is not limited to this.
• the substrate support 300 may be configured to be able to support approximately 5 to 50 (5 to 50) substrates S.
• the partition plate support 310 and the substrate support 300 are supported by the vertical drive mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217, and by the substrate support 300.
• the substrate S is rotated in the direction of rotation about the center of the substrate S.
• the vertical drive mechanism unit 400 constituting the first drive unit includes a vertical drive motor 410 as a drive source, a rotation drive motor 430, and a substrate support lifting mechanism that drives the substrate support 300 in the vertical direction.
• the boat lift mechanism 420 includes a linear actuator.
• Gas supply system As shown in FIGS. 2 and 3, as an example, in this embodiment, various gases are supplied to the distribution sections 222 on both sides in the width direction via gas supply pipes 251, and also to the distribution section 222 on the center side. Various gases can be supplied via the gas supply pipe 261. Note that upstream of the gas supply pipe 251, a gas source, a mass flow controller (MFC) as a flow rate controller (flow rate control unit), a valve as an on-off valve, etc. (all are not shown in the figure), which are known configurations in substrate processing apparatuses. (omitted) is connected.
• MFC mass flow controller
• the gas supply pipe 251 includes a first gas source that supplies a first gas containing a first element (also referred to as “first element-containing gas”), and a second gas source that supplies a second gas containing a second element (also referred to as "first element-containing gas”).
• a second gas source supplying a second element-containing gas (also referred to as “second element-containing gas") is connected, and an inert gas source supplying an inert gas is further connected.
• An inert gas source supplies an inert gas, such as nitrogen ( N2 ) gas.
• the inert gas may be a gas other than nitrogen (N 2 ) gas.
• the first gas is one of the raw material gases, that is, the processing gases.
• the first gas is, for example, a gas to which at least two silicon atoms (Si) are bonded, and is, for example, a gas containing Si and chlorine (Cl), such as disilicon hexachloride (
• the raw material gas includes a Si--Si bond, such as Si 2 C 16 , hexachlorodisilane (abbreviation: HCDS) gas, but other gases may be used.
• HCDS gas contains Si and a chloro group (chloride) in its chemical structural formula (in one molecule).
• This Si--Si bond has enough energy to be decomposed within the reaction tube 210 by colliding with a wall constituting a recess (not shown) such as a groove in the substrate S, which will be described later.
• decomposition means that the Si--Si bond is broken. That is, the Si--Si bond is broken by collision with the wall.
• the second element-containing gas is one of the processing gases.
• the second element-containing gas may be considered as a reactive gas or a reformed gas.
• the second element-containing gas contains a second element different from the first element.
• the second element is, for example, any one of oxygen (O), nitrogen (N), and carbon (C).
• the second element-containing gas is, for example, a nitrogen-containing gas.
• the second element-containing gas is a hydrogen nitride gas containing an N-H bond, such as ammonia (NH 3 ), diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) gas, or N 3 H 8 gas, but may be another gas.
• the inert gas supplied from the inert gas source is used as a purge gas to purge gas remaining in various pipes, the nozzle 227, and the reaction tube 210 during the substrate processing process.
• the exhaust system is connected to a vacuum pump as a vacuum evacuation device through a valve as an on-off valve and an APC (Auto Pressure Controller) valve as a pressure regulator (for example, a pressure adjustment section). It is configured so that it can be evacuated to a predetermined pressure (eg, vacuum degree).
• the exhaust system is also called a processing chamber exhaust system.
• the substrate processing apparatus 100 includes a controller 600 shown in FIG. 8 that controls the operation of each part of the substrate processing apparatus 100.
• the controller 600 which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 601, a RAM (Radom Access Memory) 602, a storage unit 603 as a storage unit, and an I/O port 604. .
• the RAM 602, storage device 603, and I/O port 604 are configured to be able to exchange data with the CPU 601 via an internal bus 605. Transmission and reception of data within the substrate processing apparatus 100 is performed according to instructions from a transmission/reception instruction unit 606, which is also one of the functions of the CPU 601.
• the controller 600 is provided with a network transmitter/receiver 683 that is connected to the host device 670 via a network.
• the network transmitting/receiving unit 683 can receive information regarding the processing history and processing schedule of the substrate S stored in the pod (not shown) from the host device 670.
• the storage unit 603 is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
• a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures and conditions for substrate processing, etc. are described, and the like are stored in a readable manner.
• the process recipe is a combination that allows the controller 600 to execute each procedure in the substrate processing process described later to obtain a predetermined result, and functions as a program.
• this process recipe, control program, etc. will be collectively referred to as simply a program.
• the word program may include only a single process recipe, only a single control program, or both.
• the RAM 602 is configured as a memory area (for example, a work area) in which programs, data, etc. read by the CPU 601 are temporarily held.
• the I/O port 604 is connected to each component of the substrate processing apparatus 100.
• the CPU 601 is configured to read and execute a control program from the storage unit 603 and read a process recipe from the storage unit 603 in response to input of an operation command from the input/output device 681 or the like.
• the CPU 601 is configured to be able to control the substrate processing apparatus 100 in accordance with the contents of the read process recipe.
• the CPU 601 has a transmission/reception instruction section 606.
• the controller 600 installs the program in the computer using an external storage device 682 (for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) that stores the above-mentioned program.
• an external storage device 682 for example, a magnetic disk such as a hard disk, an optical disk such as a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory
• the device (means) for supplying the program to the computer is not limited to the case where the program is supplied via the external storage device 682.
• the program may be supplied without going through the external storage device 682 by using a communication device (for example, communication means) such as the Internet or a dedicated line.
• the storage unit 603 and the external storage device 682 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as simply recording media. Note that in this specification, when the term “recording medium” is used, it may include only the storage unit 603 alone, only the external storage device 682 alone, or both.
• the transfer chamber pressure adjustment step S202 will be explained.
• the pressure inside the transfer chamber 217 is set to a vacuum level pressure.
• an exhaust system (not shown) connected to the transfer chamber 217 is operated to exhaust the atmosphere in the transfer chamber 217 so that the atmosphere in the transfer chamber 217 reaches a vacuum level.
• the heater 211 may be operated in parallel with this process. If the heater 211 is operated, it is operated at least during the film treatment process S208 described below.
• the transfer chamber 217 is brought to a vacuum level, and the substrate S is carried into the transfer chamber 217 from an adjacent vacuum transfer chamber (not shown).
• the substrate support 300 is placed on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300.
• the vacuum transfer robot is evacuated, and the substrate support 300 is raised to move the substrates S into the reaction tube 210.
• the substrate S When moving to the reaction tube 210, the substrate S is positioned so that it is aligned with the height of the nozzle 227.
• the heating step S206 will be explained. After loading the substrate S into the reaction tube 210, the heater 211 is controlled so that the surface temperature of the substrate S reaches a predetermined temperature.
• the temperature is in the high temperature range described below, and is heated to, for example, 400° C. or higher and 800° C. or lower.
• the temperature is preferably 500°C or higher and 700°C or lower, but is not limited to these temperatures.
• the membrane treatment step S208 will be explained. After the heating step S206, a film treatment step S208 is performed.
• the first gas is supplied into the reaction tube 210 according to the process recipe, and the exhaust system 280 is controlled to exhaust the processing gas from the reaction tube 210, thereby performing membrane treatment.
• This film processing step S208 corresponds to a step of supplying a processing gas to the substrate S of the present disclosure. Note that here, the first gas and the second gas are alternately supplied into the reaction tube 210 to perform an alternate supply process, or the second gas is present in the process space simultaneously with the first gas to perform a CVD process. You can also Note that gas supply and exhaust are controlled so that a predetermined pressure is maintained inside the reaction tube 210.
• the following method can be considered as an alternate supply treatment which is a specific example of a membrane treatment method.
• a first gas is supplied into the reaction tube 210 in the first step
• a second gas is supplied into the reaction tube 210 in the second step
• an inert gas is supplied between the first step and the second step as a purge step.
• the atmosphere of the reaction tube 210 is evacuated, and an alternating supply process is performed in which a combination of the first step, purge step, and second step is performed multiple times to form a desired film.
• the supplied gas is formed into a gas flow optimal for processing the substrate S by the nozzle 227, the space above the substrate S, and the downstream rectifier 215.
• the first gas is supplied to at least two gas introduction sections 506.
• the first gas is supplied from the distribution parts 222 on both sides toward the nozzle 227.
• the first gas supplied from the distribution section 222 passes through the gas introduction sections 506 on both sides of the nozzle toward the reaction tube 210, and a portion of the first gas passes through the communication section 520 of the vertical plate member 504 to the center of the adjacent nozzle.
• the gas flows to the gas introduction section 506 on the side.
• the same amount of first gas is finally supplied from the downstream ends of the gas introduction sections 506 on both sides and the downstream end of the central gas introduction section 506 at the same speed along the surface of the substrate S. It can be discharged.
• the nozzle 227 has a communication section 520 as a communication section, and the vertical plate-like members 504 on both sides expand outward in the width direction from the upstream side to the downstream side of the flow of the processing gas.
• the first gas is supplied to the surface of the substrate S so as to form a wide flow symmetrically with respect to the substrate S. Further, the first gas is ejected horizontally from the nozzle 227 and is supplied parallel to the surface of the substrate S arranged horizontally, so that the surface of the substrate S is uniformly processed.
• the inclined vertical plate members 504 on both sides are inclined toward the edge E in the width direction (the same direction as the width direction of the nozzle 227; the direction of the arrow W in FIG. 2) of the substrate S contained in the reaction tube 210. Therefore, the flow of the first gas supplied to the surface of the substrate S is straightened by the gas straightening member 500 so as to become a wide flow symmetrical on the left and right, so that the entire surface of the substrate S can be uniformly processed using the first gas.
• the nozzles 227 are provided in multiple stages in the height direction of the substrate holder, and a nozzle 227 is provided for each substrate S, so that each substrate S can be uniformly processed.
• the width Wb of the communication part 520 As shown in FIG. 4, in the nozzle 227, by setting the width Wb of the communication part 520 to 5 to 10% (5 or more, 10 or less)% of the width WA of the gas introduction part 506, gas can be introduced on both sides in the nozzle width direction.
• the amount of gas entering from the portion 506 to the gas introduction portion 506 on the center side in the nozzle width direction is optimal.
• the width Wb of the communication section 520 is 5% or less of the width WA of the gas introduction section, the directivity of the gas becomes strong, and the communication section 520 is provided on the reaction tube 210 side so that the distance from the central vertical plate member 504 is widened.
• the gas flow becomes stronger in the direction of the vertical plate-like member 504 that is provided at an angle.
• the width Wb of the communication portion 520 is set to be 10% or more of the width WA of the gas introduction portion, the directivity will be weakened and the gas flow toward the center of the wafer 200 will be strong. This makes it possible to equalize the amount and speed of the first gas discharged from each gas introduction section 506 toward the substrate S, and furthermore, to equalize the average flow velocity of the gas discharged from each gas introduction section 506. It is also possible to raise it. Note that when the second gas is supplied into the reaction tube 210, the gas flow is rectified by the gas rectification member 500 in the same way as when the first gas is supplied into the reaction tube 210, so that the entire surface of the substrate S is uniformly distributed. can be processed.
• the amount and flow rate of gas discharged from each gas introduction part 506 toward the substrate S can be made uniform, so that the occurrence of singular points and poor processing of the groove bottom can be avoided. The occurrence of can be suppressed. As described above, according to the present disclosure, one or more effects can be obtained.
• S210 The substrate unloading step S210 will be explained.
• the processed substrate S is carried out of the transfer chamber 217 by the reverse procedure of the substrate carrying-in step S204 described above.
• (S212) Determination S212 will be explained. Here, it is determined whether or not the substrate has been processed a predetermined number of times. If it is determined that the processing has not been performed a predetermined number of times, the process returns to the substrate loading step S204 and the next substrate S is processed. When it is determined that the process has been performed a predetermined number of times, the process ends.
• the first gas or the second gas can be diluted with an inert gas (for example, nitrogen gas (N2)) and then supplied to the substrate S.
• an inert gas for example, nitrogen gas (N2)
• inert gas is supplied to gas introduction sections 506 other than at least two gas introduction sections 506 that supply processing gas.
• the first gas is supplied from the distribution section 222 to the gas introduction sections 506 on both sides of the nozzle, and the inert gas is supplied from the distribution section 224 to the gas introduction section 506 on the center side of the nozzle.
• the flow rate of the inert gas is preferably, for example, 10% or less of the flow rate of the processing gas, so as not to dilute the processing gas too much.
• a plurality of gases of different types for example, a first gas and a second gas, are mixed inside the nozzle 227, and a mixed gas obtained by mixing the first gas and the second gas is used. can be discharged toward the substrate S.
• the first gas is supplied to at least two gas introduction parts 506, for example, one of the gas introduction parts 506 on the center side of the nozzle, and the second gas is supplied to the other adjacent gas introduction part. .
• the first gas and the second gas mutually travel between one gas introduction section 506 and the other gas introduction section 506 on the nozzle center side via the communication section 520 of the vertical plate-like member 504.
• the first gas and the second gas are uniformly mixed before reaching the downstream end of the gas introduction section 506, and the mixed gas is further introduced into the gas introduction sections 506 on both sides of the nozzle width direction.
• the mixed gas can be discharged toward the substrate S from each gas introduction section 506 during the period from the entry to the downstream end.
• an inert gas may be supplied to the gas introduction sections 506 other than the two adjacent gas introduction sections 506 that supply different types of gas, here, the gas introduction sections 506 on both sides of the nozzle to dilute the mixed gas.
• the flow rate of the inert gas in this case is preferably 50% or less of the flow rate of the mixed gas in which the two types of processing gases are mixed (to prevent excessive dilution). If the flow rate of the inert gas is 50% or more of the flow rate of a mixed gas in which two types of processing gases are mixed, the mixed gas will be too diluted. Furthermore, if the flow rate of the inert gas is 50% or more of the flow rate of the mixed gas in which two types of processing gases are mixed, the diluted mixed gas is More water flows than from the center of the nozzle.
• different types of gas are mixed inside the nozzle 227, so that different types of gas do not mix in each distribution section, and therefore the generation of particles that may result from the mixing of gases in each distribution section can be suppressed.
• the present embodiment can be applied as long as they are alternately supplied to perform the film forming process.
• the first element may be various elements such as titanium (Ti), silicon (Si), zirconium (Zr), and hafnium (Hf).
• the second element may be, for example, nitrogen (N), oxygen (O), or the like. Note that as the first element, as described above, it is more desirable to use Si.
• the first gas is explained using HCDS gas as an example, but it is not limited to this as long as it contains silicon and has a Si-Si bond.
• HCDS gas tetrachlorodimethyldisilane ((CH3)2Si2Cl4, abbreviation: TCDMDS) or dichlorotetramethyldisilane ((CH3)4Si2Cl2, abbreviation: DCTMDS) may be used.
• TCDMDS has a Si--Si bond and further contains a chloro group and an alkylene group.
• DCTMDS has a Si--Si bond and further contains a chloro group and an alkylene group.
• a film forming process is taken as an example of the process performed by the substrate processing apparatus, but the present embodiment is not limited to this. That is, this aspect can be applied not only to the film forming processes exemplified in each embodiment, but also to film forming processes other than the thin films exemplified in each embodiment. Furthermore, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. Furthermore, it is also possible to add, delete, or replace some of the configurations of each embodiment with other configurations.
• gas introduction parts 506 are provided in the nozzle width direction inside the nozzle 227, but by increasing the number of vertical plate members 504 provided in the gas rectification member 500, five or more gas introduction parts 506 are provided in the nozzle width direction.
• a gas introduction section 506 may be provided, and the number of gas rectifying members 500 can be increased or decreased as necessary. In either case, gas can be supplied to at least two of the plurality of gas introduction sections 506. Further, gas may be supplied to three or more gas introduction sections 506 as necessary.
• the gas rectifying member 500 is arranged inside the nozzle 227, and the inside of the nozzle is vertically divided into two, and four gas introduction parts 506 are provided horizontally on each of the upper and lower sides.
• the inside of the nozzle 227 may be divided into upper and lower halves as necessary, and the inside of the nozzle 227 does not need to be divided into upper and lower halves.
• the gas when the first gas and the second gas are individually supplied to the substrate S, the gas is not supplied to the gas introduction part 506 on the center side in the nozzle width direction, and the gas is introduced on both sides in the nozzle width direction.
• gas is supplied only to the portion 506, gas may not be supplied to the gas introduction portions 506 on both sides in the nozzle width direction, and gas may be supplied only to the gas introduction portion 506 on the center side in the nozzle width direction.
• the same amount of the first gas or the second gas is finally applied to the substrate at the same speed from the downstream ends of the gas introduction sections 506 on both sides and the downstream end of the central gas introduction section 506. can be discharged along the surface.
• the communication portion 518 is provided at the end side in the width direction of the horizontal plate-like member 502, so for example, the two upper and lower gas introduction portions 506 provided on both sides in the nozzle width direction
• the gases flowing into the two can mutually enter through the communication portion 518. Therefore, as an example, by supplying the first gas to one of the two upper and lower gas introduction parts 506 and supplying the second gas to the other of the two upper and lower gas introduction parts 506, the first gas and It is also possible to mix the second gas in the nozzle 227 and discharge the mixed gas toward the substrate S from the upper and lower gas introduction portions 506. In this case, it is necessary to change the structure of the gas supply structure 212 so that different types of gases are supplied to the upper gas introduction section 506 and the lower gas introduction section 506.
• the diameter of the hole 514 provided in the downstream wall 512 corresponding to the gas introduction parts 506 on both sides in the nozzle width direction is set to correspond to the two gas introduction parts 506 on the center side in the nozzle width direction.
• the diameter can be made smaller than the diameter of the hole 514 provided in the downstream wall 512.
• the passage resistance when gas passes through the holes 514 in the wall 512 corresponding to the gas introduction parts 506 on both sides in the nozzle width direction is reduced to the passage resistance in the holes 514 in the wall 512 corresponding to the gas introduction parts 506 on the center side in the nozzle width direction.
• the internal pressure of the gas introduction portions 506 on both sides of the nozzle widthwise becomes relatively higher than the internal pressure of the gas introduction portions 506 on the center side of the nozzle widthwise. Thereby, it is possible to increase the amount of gas that enters the gas introduction part 506 on the center side in the nozzle width direction from the gas introduction parts 506 on both sides in the nozzle width direction via the communication part 520.
• the amount of gas that is allowed to pass through the communication section 520 can also be controlled by changing the width Wa of the communication section 520.
• the wall 512 was provided on the downstream side, but the wall 512 may be provided as necessary, and as shown in FIG. 10, the wall 512 is not provided. It's okay. Further, the upstream wall 508 may be provided as needed, or may not be provided. In the gas rectifying member 500 shown in FIG. 10, the same components as those of the gas rectifying member 500 shown in FIG.
• the communication portions 518 and 520 may be provided at necessary locations so that the flow of the processing gas becomes a wide flow symmetrically with respect to the substrate S.
• the nozzles 227 may be stacked according to the number of substrates S to be processed. When processing one substrate S, only one nozzle 227 is required.
• the present disclosure can also be applied to the case of processing one substrate S, and it is possible to obtain the same effects as the above embodiment.
• gas rectifying member 500 described in the above embodiment is made of a plate-like member, it may be made of a member other than a plate-like member.
• substrate used in this specification can mean the substrate itself, or a laminate of the substrate and a specified layer or film formed on its surface.
• surface of the substrate used in this specification can mean the surface of the substrate itself, or the surface of a specified layer, etc. formed on the substrate.
• each element is not limited to one, and a plurality of elements may exist unless otherwise specified in the specification.
• a film is formed using a substrate processing apparatus that processes a plurality of substrates.
• the present disclosure is not limited to the above-described embodiments, and can be suitably applied, for example, to a case where a film is formed using a substrate processing apparatus that processes a single substrate. Further, the present disclosure can be suitably applied to a substrate processing apparatus having a cold wall type processing furnace or a substrate processing apparatus having a hot wall type processing furnace, in which a nozzle for blowing processing gas along the substrate is used. It is applicable to a substrate processing apparatus having the following.
• each process can be performed under the same processing procedures and processing conditions as in the above-described embodiments and modifications, and the same effects as in the above-described embodiments and modifications can be obtained. . Moreover, the above-mentioned aspects and modifications can be used in appropriate combinations.
• the processing procedure and processing conditions at this time can be, for example, similar to the processing procedure and processing conditions of the above-described embodiment and modification.
• Substrate processing apparatus 210 Reaction tube (processing chamber) 227 Nozzle 251 Gas supply pipe (gas supply section) 506 Gas introduction part 518 Communication part 520 Communication part

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