WO2024057860A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2024057860A1
WO2024057860A1 PCT/JP2023/030456 JP2023030456W WO2024057860A1 WO 2024057860 A1 WO2024057860 A1 WO 2024057860A1 JP 2023030456 W JP2023030456 W JP 2023030456W WO 2024057860 A1 WO2024057860 A1 WO 2024057860A1
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Prior art keywords
sub
conductive
metal layer
semiconductor device
terminal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/JP2023/030456
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English (en)
French (fr)
Japanese (ja)
Inventor
央至 佐藤
大記 池田
昂平 谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
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Rohm Co Ltd
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Filing date
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Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP2024546812A priority Critical patent/JPWO2024057860A1/ja
Priority to CN202380064833.1A priority patent/CN119856282A/zh
Priority to DE112023003434.6T priority patent/DE112023003434T5/de
Publication of WO2024057860A1 publication Critical patent/WO2024057860A1/ja
Priority to US19/074,964 priority patent/US20250210532A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the present disclosure relates to a semiconductor device.
  • Patent Document 1 discloses a conventional semiconductor device (power module).
  • the semiconductor device described in Patent Document 1 includes a semiconductor element, a main substrate, and a substrate.
  • the main substrate has a metal layer.
  • the semiconductor element is conductively bonded to the metal layer.
  • the sub-board is supported by the main board.
  • the semiconductor device described in Patent Document 1 includes a support substrate (ceramic substrate). The support substrate supports the semiconductor element.
  • the support substrate includes an insulating base material and conductor layers laminated on both sides of the base material.
  • the base material is made of ceramic, for example.
  • Each conductor layer is made of, for example, Cu (copper), and a semiconductor element is bonded to one conductor layer.
  • a wire made of Al, for example, is used for electrical connection between the semiconductor element and the conductor layer.
  • the configuration of the conduction path is limited, such as the need to connect a wire to the metal layer. Furthermore, when using a wire, there is a possibility that an unintended phenomenon may occur at a bonding interface between different metals, such as between a conductor layer made of Cu and a wire made of Al.
  • an object of the present disclosure is to provide a semiconductor device that is more improved than the conventional one.
  • an object of the present disclosure is to provide a semiconductor device and a vehicle in which conduction paths leading to the main substrate can be set in a more diverse manner.
  • Another object of the present disclosure is to provide a semiconductor device that can suppress the occurrence of unintended phenomena between dissimilar metals.
  • a semiconductor device provided by a first aspect of the present disclosure includes a main substrate having a first main metal layer, a first semiconductor element supported by the main substrate, and a first sub-substrate supported by the main substrate. and a sealing resin that covers the first semiconductor element, and the first sub-substrate includes a sub-insulating layer, a first sub-metal layer and a first sub-metal layer disposed across the sub-insulating layer in the thickness direction.
  • the second sub-metal layer is electrically connected to the first main metal layer
  • the first sub-metal layer includes a region
  • the first sub-substrate includes a region. and the second sub-metal layer.
  • a vehicle provided by a second aspect of the present disclosure includes a drive source and a semiconductor device provided by the first aspect of the present disclosure, and the semiconductor device is electrically connected to the drive source.
  • a semiconductor device provided by a third aspect of the present disclosure includes a first conductive member including a first metal, a second conductive member including a second metal, and a first block including a third metal, The first metal, the second metal, and the third metal are different from each other, and the first block is disposed between the first conductive member and the second conductive member.
  • the conduction paths leading to the main board can be set in a wider variety of ways. Further, according to the above configuration, unintended phenomena between dissimilar metals can be suppressed.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a partial perspective view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a partial perspective view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a plan view showing a semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a partial side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 7 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 8 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a partial perspective view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 9 is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 10 is a side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 11 is a bottom view of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG.
  • FIG. 13 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 14 is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 15 is a cross-sectional view taken along line XV-XV in FIG.
  • FIG. 16 is a cross-sectional view taken along line XVI-XVI in FIG.
  • FIG. 17 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 18 is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 19 is a partially enlarged sectional view taken along line XIX-XIX in FIG. 17.
  • FIG. 20 is a configuration diagram showing a vehicle according to the first embodiment of the present disclosure.
  • FIG. 21 is a partially enlarged sectional view showing a first modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 22 is a partially enlarged sectional view showing a second modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 23 is a partially enlarged sectional view showing a third modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 24 is a partially enlarged plan view showing a fourth modification of the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 25 is a partial enlarged plan view showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 26 is a partially enlarged sectional view taken along line XXVI-XXVI in FIG. 25.
  • FIG. 27 is a partially enlarged sectional view showing a first modification of the semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 28 is a partially enlarged sectional view showing a second modification of the semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 29 is a partially enlarged sectional view showing a third modification of the semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 30 is a partially enlarged plan view showing a fourth modification of the semiconductor device according to the second embodiment of the present disclosure.
  • FIG. 31 is a partially enlarged cross-sectional view showing a semiconductor device according to a third embodiment of the present disclosure.
  • FIG. 32 is a partially enlarged plan view showing a first modification of the semiconductor device according to the third embodiment of the present disclosure.
  • FIG. 33 is a partially enlarged sectional view taken along line XXXIII-XXXIII in FIG. 32.
  • FIG. 34 is a perspective view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 35 is a partial perspective view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 36 is a partial perspective view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 37 is a plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 38 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 39 is a partial side view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 40 is a partially enlarged plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 41 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 42 is a partial plan view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 43 is a side view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 44 is a bottom view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 45 is a cross-sectional view taken along the XLV-XLV line in FIG. 38.
  • FIG. 46 is a cross-sectional view taken along the XLVI-XLVI line in FIG. 38.
  • FIG. 47 is a partially enlarged cross-sectional view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 48 is a partially enlarged cross-sectional view showing a semiconductor device according to a fourth embodiment of the present disclosure.
  • FIG. 49 is a cross-sectional view taken along line XLIX-XLIX in FIG. 38.
  • FIG. 50 is a cross-sectional view taken along line LL in FIG. 38.
  • FIG. 51 is a sectional view taken along the LI-LI line in FIG. 38.
  • FIG. 52 is a cross-sectional view taken along line LII-LII in FIG. 38.
  • FIG. 53 is a sectional view taken along line LIII-LIII in FIG. 38.
  • FIG. 54 is a cross-sectional view taken along the line LIV-LIV in FIG. 42.
  • FIG. 55 is a partially enlarged sectional view taken along the LV-LV line in FIG. 54.
  • FIG. 56 is a partially enlarged sectional view showing the third conductive component of the first modified example of the semiconductor device according to the fourth embodiment of the present disclosure.
  • FIG. 57 is a partially enlarged cross-sectional view showing the third conductive component of the second modified example of the semiconductor device according to the fourth embodiment of the present disclosure.
  • FIG. 58 is a partially enlarged sectional view showing a third conductive component of a third modified example of the semiconductor device according to the fourth embodiment of the present disclosure.
  • FIG. 59 is a partially enlarged sectional view taken along the line LIX-LIX in FIG. 58.
  • FIG. 60 is a partial plan view showing a semiconductor device according to a fifth embodiment of the present disclosure.
  • FIG. 61 is a partial cross-sectional view taken along line LXI-LXI in FIG. 60.
  • FIG. 62 is a partial cross-sectional view taken along line LXII-LXII in FIG. 60.
  • FIG. 63 is a partial cross-sectional view taken along the line LXIII-LXIII in FIG. 60.
  • FIG. 64 is a partial cross-sectional view taken along line LXIV-LXIV in FIG. 60.
  • FIG. 65 is a partial plan view showing a semiconductor device according to a sixth embodiment of the present disclosure.
  • FIG. 66 is a partial cross-sectional view taken along the line LXVI-LXVI in FIG. 65.
  • FIG. 67 is a partial cross-sectional view taken along line LXVII-LXVII in FIG. 65.
  • FIGS. 1 to 33 first to third embodiments
  • FIGS. 34 to 67 fourth to sixth embodiments
  • the same reference numerals may be used for different members (elements, etc.), and different numbers may be used for the same (or similar) members (elements, etc.).
  • a thing A is formed on a thing B and "a thing A is formed on a thing B” mean “a thing A is formed on a thing B” unless otherwise specified.
  • "something A is placed on something B” and “something A is placed on something B” mean "something A is placed on something B” unless otherwise specified.
  • a certain surface A faces (one side or the other side of) direction B is not limited to the case where the angle of surface A with respect to direction B is 90 degrees, and the surface A faces direction B. Including cases where it is tilted to the opposite direction.
  • FIGS. 1 to 20 show a semiconductor device according to a first embodiment of the present disclosure.
  • the semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a main substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, and a fourth terminal 44. , a plurality of control terminals 45, a first sub-board 48A, a second sub-board 48B, a first conductive member 5, a second conductive member 6, and a sealing resin 8.
  • FIG. 1 is a perspective view showing a semiconductor device A1.
  • FIG. 2 is a partial perspective view showing the semiconductor device A1.
  • FIG. 3 is a partial perspective view showing the semiconductor device A1.
  • FIG. 4 is a plan view showing the semiconductor device A1.
  • FIG. 5 is a partial plan view showing the semiconductor device A1.
  • FIG. 6 is a partial side view showing the semiconductor device A1.
  • FIG. 7 is a partially enlarged plan view showing the semiconductor device A1.
  • FIG. 8 is a partial plan view showing the semiconductor device A1.
  • FIG. 9 is a partial plan view showing the semiconductor device A1.
  • FIG. 10 is a side view showing the semiconductor device A1.
  • FIG. 11 is a bottom view showing the semiconductor device A1.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. FIG.
  • FIG. 13 is a partially enlarged sectional view showing the semiconductor device A1.
  • FIG. 14 is a partially enlarged cross-sectional view showing the semiconductor device A1.
  • FIG. 15 is a cross-sectional view taken along line XVIII-XVIII in FIG.
  • FIG. 16 is a cross-sectional view taken along line XX-XX in FIG. 5.
  • FIG. 17 is a partially enlarged plan view showing the semiconductor device A1.
  • FIG. 18 is a partially enlarged plan view showing the semiconductor device A1.
  • FIG. 19 is a partially enlarged sectional view taken along line XIX-XIX in FIG. 17.
  • FIG. 20 is a configuration diagram showing a vehicle according to the first embodiment of the present disclosure. In FIG. 19, for convenience of understanding, the sealing resin 8 is omitted.
  • the thickness direction z is the thickness direction of the present disclosure.
  • the first direction x is a direction perpendicular to the thickness direction z.
  • the second direction y is a direction perpendicular to the thickness direction z and the first direction x.
  • one side of the first direction x is referred to as the x1 side of the first direction x
  • the other side of the first direction x is referred to as the x2 side of the first direction x.
  • one side in the second direction y is referred to as the y1 side in the second direction y
  • the other side in the second direction y is referred to as the y2 side in the second direction y.
  • one side in the thickness direction z is referred to as the z1 side in the thickness direction z
  • the other side in the thickness direction z is referred to as the z2 side in the thickness direction z.
  • First semiconductor elements 10A, second semiconductor elements 10B The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are each electronic components that serve as the functional center of the semiconductor device A1.
  • the constituent material of each first semiconductor element 10A and each second semiconductor element 10B is, for example, a semiconductor material mainly composed of SiC (silicon carbide). This semiconductor material is not limited to SiC (silicon carbide), but may also be Si (silicon), GaN (gallium nitride), C (diamond), or the like.
  • Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is a power semiconductor chip having a switching function, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the first semiconductor element 10A and the second semiconductor element 10B are MOSFETs, but the present invention is not limited to this, and other transistors such as IGBTs (Insulated Gate Bipolar Transistors) can be used. There may be.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B may have mutually different configurations or may have a common configuration. In the following description, the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are all the same element.
  • Each first semiconductor element 10A and each second semiconductor element 10B is, for example, an n-channel MOSFET, but may be a p-channel MOSFET.
  • the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102, as shown in FIGS. 13 and 14.
  • the element main surface 101 and the element back surface 102 are separated in the thickness direction z.
  • the element main surface 101 faces the z1 side in the thickness direction z
  • the element back surface 102 faces the z2 side in the thickness direction z.
  • first semiconductor elements 10A and the number of second semiconductor elements 10B are changed as appropriate depending on the required performance such as the current capacity handled by the semiconductor device A1.
  • four first semiconductor elements 10A and four second semiconductor elements 10B are each arranged.
  • the number of the first semiconductor elements 10A and the second semiconductor elements 10B may be two or three, or five or more each.
  • the number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal or different.
  • the semiconductor device A1 is configured, for example, as a half-bridge switching circuit.
  • the plurality of first semiconductor elements 10A constitute an upper arm circuit of the semiconductor device A1
  • the plurality of second semiconductor elements 10B constitute a lower arm circuit.
  • the plurality of first semiconductor elements 10A are connected in parallel with each other
  • the plurality of second semiconductor elements 10B are connected in parallel with each other.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are connected in series and constitute a bridge layer.
  • the plurality of first semiconductor elements 10A are each mounted on a first conductive portion 32A of the main substrate 3, which will be described later, as shown in FIGS. 8, 9, and 16. In the examples shown in FIGS. 8 and 9, the plurality of first semiconductor elements 10A are arranged, for example, in the second direction y and are spaced apart from each other. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a first conductive bonding material 19A. The element back surface 102 faces the first conductive portion 32A.
  • the plurality of second semiconductor elements 10B are each mounted on a second conductive portion 32B of the main substrate 3, which will be described later, as shown in FIGS. 8, 9, and 15.
  • the plurality of second semiconductor elements 10B are arranged, for example, in the second direction y and spaced apart from each other.
  • Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a second conductive bonding material 19B.
  • the element back surface 102 faces the second conductive portion 32B.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B overlap, but they do not need to overlap.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back electrode 15.
  • the configurations of the first main surface electrode 11, second main surface electrode 12, third main surface electrode 13, and back surface electrode 15 described below are common to each first semiconductor element 10A and each second semiconductor element 10B.
  • the first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are provided on the element main surface 101.
  • the first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown).
  • the back electrode 15 is provided on the back surface 102 of the element.
  • the first principal surface electrode 11 is, for example, a gate electrode, to which a drive signal (for example, a gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input.
  • the second principal surface electrode 12 is, for example, a source electrode through which a source current flows.
  • the third principal surface electrode 13 is, for example, a source sense electrode through which a source current flows.
  • the back surface electrode 15 is, for example, a drain electrode through which a drain current flows.
  • the back surface electrode 15 covers substantially the entire area of the back surface 102 of the element.
  • the back surface electrode 15 is, for example, formed by Ag (silver) plating.
  • each first semiconductor element 10A (each second semiconductor element 10B) changes between a conductive state and a disconnected state according to this drive signal. The state changes. In a conductive state, a current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in a cutoff state, this current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation.
  • the semiconductor device A1 receives input between one fourth terminal 44 and two first terminals 41 and second terminals 42 due to the switching functions of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. For example, the DC voltage is converted into an AC voltage, and the AC voltage is output from the third terminal 43.
  • Main substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B.
  • the specific configuration of the main board 3 is not limited at all, and is configured, for example, by a DBC (Direct Bonded Copper) board or an AMB (Active Metal Brazing) board.
  • Main substrate 3 includes a main insulating layer 31 , a first main metal layer 32 , and a second main metal layer 33 .
  • the first main metal layer 32 includes a first conductive portion 32A and a second conductive portion 32B.
  • the dimension of the main substrate 3 in the thickness direction z is not limited at all, and is, for example, 0.4 mm or more and 3.0 mm or less.
  • the first main metal layer 32 is not provided with a plating layer or the like and consists of a single layer.
  • the constituent material of the main insulating layer 31 includes, for example, ceramics with excellent thermal conductivity. Such ceramics include, for example, SiN (silicon nitride).
  • the constituent material of the main insulating layer 31 is not limited to ceramics, and may be an insulating resin sheet or the like.
  • the main insulating layer 31 has, for example, a rectangular shape in plan view.
  • the dimension of the main insulating layer 31 in the thickness direction z is not limited at all, and is, for example, 0.05 mm or more and 1.0 mm or less.
  • the first conductive part 32A supports the plurality of first semiconductor elements 10A
  • the second conductive part 32B supports the plurality of second semiconductor elements 10B.
  • the first conductive part 32A and the second conductive part 32B are formed on the upper surface of the main insulating layer 31 (the surface facing the z1 side in the thickness direction z).
  • the constituent material of the first conductive part 32A and the second conductive part 32B includes, for example, Cu (copper).
  • the constituent material may include, for example, Al (aluminum) other than Cu (copper).
  • the first conductive part 32A and the second conductive part 32B are separated in the first direction x.
  • the first conductive part 32A is located on the x1 side of the second conductive part 32B in the first direction x.
  • the first conductive portion 32A and the second conductive portion 32B each have, for example, a rectangular shape in plan view.
  • the first conductive part 32A and the second conductive part 32B, together with the first conductive member 5 and the second conductive member 6, are a path for main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. Configure.
  • the first conductive part 32A has a first main surface 301A.
  • the first main surface 301A is a plane facing the z1 side in the thickness direction z.
  • a plurality of first semiconductor elements 10A are each bonded to the first main surface 301A of the first conductive portion 32A via a first conductive bonding material 19A.
  • the second conductive portion 32B has a second main surface 301B.
  • the second main surface 301B is a plane facing toward the z1 side in the thickness direction z.
  • a plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via a second conductive bonding material 19B.
  • the constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited, and include, for example, solder, a metal paste material containing a metal such as Ag (silver), or a metal such as Ag (silver). sintered metals, etc.
  • the dimensions of the first conductive part 32A and the second conductive part 32B in the thickness direction z are not limited at all, and are, for example, 0.1 mm or more and 1.5 mm or less.
  • the second main metal layer 33 is formed on the lower surface of the main insulating layer 31 (the surface facing the z2 side in the thickness direction z).
  • the constituent material of the second main metal layer 33 is, for example, the same as the constituent material of the first main metal layer 32.
  • the second main metal layer 33 has a back surface 302.
  • the back surface 302 is a plane facing the z2 side in the thickness direction z. In the example shown in FIG. 11, the back surface 302 is exposed from the sealing resin 8, for example.
  • a heat dissipating member for example, a heat sink), etc. (not shown) can be attached to the back surface 302.
  • the back surface 302 may not be exposed from the sealing resin 8 and may be covered with the sealing resin 8.
  • the second main metal layer 33 overlaps both the first conductive part 32A and the second conductive part 32B in plan view.
  • First terminal 41, second terminal 42, third terminal 43, fourth terminal 44 The specific configurations of the first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 are not limited in any way.
  • This metal plate includes, for example, Cu (copper) or a Cu (copper) alloy. In the examples shown in FIGS. 1 to 6, FIG. 8, FIG. 9, and FIG. However, the number of each terminal is not limited at all.
  • a DC voltage to be subjected to power conversion is input to the first terminal 41, the second terminal 42, and the fourth terminal 44.
  • the fourth terminal 44 is a positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are each negative electrodes (N terminal).
  • P terminal positive electrode
  • N terminal negative electrodes
  • the first terminal 41 , the second terminal 42 , the plurality of third terminals 43 , and the fourth terminal 44 each include a portion covered with the sealing resin 8 and a portion exposed from the sealing resin 8 .
  • the fourth terminal 44 is electrically connected to the first conductive portion 32A.
  • the method of conductive bonding is not limited at all, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. are appropriately employed.
  • the fourth terminal 44 may be formed integrally with the first conductive portion 32A.
  • the fourth terminal 44 is located on the x1 side in the first direction x with respect to the plurality of first semiconductor elements 10A and the first conductive portion 32A, as shown in FIGS. 8, 9, and the like.
  • the fourth terminal 44 is electrically connected to the first conductive portion 32A and, via the first conductive portion 32A, to the back electrode 15 (drain electrode) of each first semiconductor element 10A.
  • the first terminal 41 and the second terminal 42 are electrically connected to the second conductive member 6, as shown in FIG.
  • the method of conductive bonding is not limited at all, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. are appropriately employed.
  • the first terminal 41 and the second terminal 42 may be integrally formed with the second conductive member 6.
  • the first terminal 41 and the second terminal 42 are respectively located on the x1 side in the first direction x with respect to the plurality of first semiconductor elements 10A and the first conductive part 32A, as shown in FIGS. 5, 8, etc. .
  • the first terminal 41 and the second terminal 42 are each electrically connected to the second conductive member 6 and connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive member 6.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 each protrude from the sealing resin 8 toward the x1 side in the first direction x in the semiconductor device A1. ing.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other.
  • the first terminal 41 and the second terminal 42 are located on opposite sides of the fourth terminal 44 in the second direction y.
  • the first terminal 41 is located on the y1 side of the fourth terminal 44 in the second direction y
  • the second terminal 42 is located on the y2 side of the fourth terminal 44 in the second direction y.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the second direction y.
  • the two third terminals 43 are each electrically connected to the second conductive portion 32B.
  • the method of conductive bonding is not limited at all, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. are appropriately employed.
  • the two third terminals 43 are each located on the x2 side in the first direction x with respect to the plurality of second semiconductor elements 10B and the second conductive portion 32B, as shown in FIG. 8 and the like. Each third terminal 43 is electrically connected to the second conductive portion 32B and, via the second conductive portion 32B, to the back electrode 15 (drain electrode) of each second semiconductor element 10B.
  • third terminals 43 is not limited to two, and may be one, for example, or three or more. For example, when there is only one third terminal 43, it is desirable that it is connected to the central portion of the second conductive portion 32B in the second direction y.
  • First sub-board 48A, second sub-board 48B The first sub-board 48A and the second sub-board 48B support a plurality of control terminals 45.
  • the first sub-substrate 48A and the second sub-substrate 48B are interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.
  • the first sub-board 48A and the second sub-board 48B may have different configurations or may have the same configuration.
  • the first sub-substrate 48A is arranged on the first conductive part 32A.
  • the second sub-substrate 48B is arranged on the second conductive part 32B.
  • the first sub-board 48A and the second sub-board 48B have the same configuration, and one is rotated by 180 degrees with respect to the other when viewed in the thickness direction z. .
  • the specific configurations of the first sub-board 48A and the second sub-board 48B are not limited at all.
  • Specific configuration examples of the first sub-substrate 48A and the second sub-substrate 48B include, for example, an IMS substrate (Insulated Metal Substrate), a glass epoxy resin substrate, and the like.
  • the first sub-board 48A and the second sub-board 48B are IMS boards.
  • the first sub-substrate 48A and the second sub-substrate 48B have a sub-insulating layer 481, a first sub-metal layer 482, and a second sub-metal layer 483 stacked on each other.
  • the sub-insulating layer 481 is made of ceramics, for example.
  • the sub-insulating layer 481 has, for example, a rectangular shape in plan view.
  • the thickness of the sub-insulating layer 481 is not limited at all, and is, for example, 0.05 mm or more and 1.0 mm or less.
  • the first sub-metal layer 482 is formed on the upper surface of the sub-insulating layer 481 (the surface facing the z1 side in the thickness direction z), as shown in FIG. 19 and the like.
  • the first sub-metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy.
  • the specific configuration of the first sub-metal layer 482 is not limited at all, and in this embodiment includes a base material layer 4820 and a surface metal layer 4829.
  • Base material layer 4820 is in contact with sub-insulating layer 481.
  • Base material layer 4820 includes, for example, Cu (copper) or Cu (copper) alloy.
  • the thickness of the base material layer 4820 is not limited at all, and is, for example, 0.035 mm or more and 2.0 mm or less.
  • the surface metal layer 4829 is laminated on the side opposite to the sub-insulating layer 481 with respect to the base material layer 4820.
  • the surface metal layer 4829 includes a metal different from the constituent material of the base material layer 4820, and includes Ni (nickel), for example. Further, the surface metal layer 4829 may have a structure in which a plurality of metal layers are stacked.
  • the thickness of the surface metal layer 4829 is not limited at all, and is, for example, 1 ⁇ m or more and 10 ⁇ m or less.
  • the first sub-metal layer 482 includes multiple regions 482A, 482B, 482C, 482D, 482E, and 482F.
  • the plurality of regions 482A, 482B, 482C, 482D, 482E, and 482F are spaced apart and insulated from each other.
  • the region 482A includes a connecting portion 4821A and a terminal portion 4822A.
  • the connecting portion 4821A is located on the x2 side in the first direction x
  • the terminal portion 4822A is located on the x1 side in the first direction x.
  • the connecting portion 4821A is located on the x1 side in the first direction x
  • the terminal portion 4822A is located on the x2 side in the first direction x.
  • the connecting portion 4821A has a shape that is elongated in the second direction y.
  • the terminal portion 4822A has a substantially circular shape.
  • a plurality of wires 71 are connected to the connecting portion 4821A.
  • the wire 71 is bonded to the surface metal layer 4829 of the connection portion 4821A.
  • the constituent material of the wire 71 is not limited at all, and includes, for example, Al (aluminum) or Al (aluminum) alloy.
  • the region 482A is electrically connected to the first main surface electrode 11 (gate electrode) of the plurality of first semiconductor elements 10A (the plurality of second semiconductor elements 10B) via the plurality of wires 71.
  • the region 482B includes a connecting portion 4821B and a terminal portion 4822B.
  • the connecting portion 4821B is located on the x2 side in the first direction x
  • the terminal portion 4822B is located on the x1 side in the first direction x.
  • the connecting portion 4821B is located on the x1 side in the first direction x
  • the terminal portion 4822B is located on the x2 side in the first direction x.
  • the region 482B is arranged on the x1 side of the connecting portion 4821A in the first direction x.
  • the region 482B is arranged on the x2 side of the connecting portion 4821A in the first direction x.
  • the connecting portion 4821B has a shape that is elongated in the second direction y.
  • the terminal portion 4822B has a substantially semicircular shape.
  • the terminal portion 4822B is located on the y2 side of the terminal portion 4822A in the second direction y.
  • the terminal portion 4822B is located on the y1 side of the terminal portion 4822A in the second direction y.
  • a plurality of wires 72 are connected to the connecting portion 4821B.
  • the wire 72 is bonded to the surface metal layer 4829 of the connection portion 4821B.
  • the constituent material of the wire 72 is not limited at all, and includes, for example, Al (aluminum) or Al (aluminum) alloy.
  • the region 482B is electrically connected to the third main surface electrode 13 (source sense electrode) of the plurality of first semiconductor elements 10A (the plurality of second semiconductor elements 10B) via the plurality of wires 72.
  • the region 482C includes a connecting portion 4821C and a terminal portion 4822C.
  • the connecting portion 4821C is located on the y2 side in the second direction y, and the terminal portion 4822C is located on the y1 side in the second direction y.
  • the connecting portion 4821C is located on the y1 side in the second direction y, and the terminal portion 4822C is located on the y2 side in the second direction y.
  • the connecting portion 4821C has a bent shape extending in the second direction y.
  • the terminal portion 4822C has a substantially circular shape.
  • the terminal portion 4822C is located on the x1 side of the connecting portion 4821A in the first direction x, and is located on the y2 side of the terminal portion 4822B in the second direction y.
  • the connecting portion 4821A is located on the x2 side in the first direction x
  • the terminal portion 4822C is located on the y1 side in the second direction y of the terminal portion 4822B.
  • the region 482D includes a connecting portion 4821D and a terminal portion 4822D.
  • the connecting portion 4821D is located on the y2 side in the second direction y
  • the terminal portion 4822D is located on the y1 side in the second direction y.
  • the connecting portion 4821D has a rectangular shape, for example, and the terminal portion 4822D has a substantially circular shape, for example.
  • the connecting portion 4821D is located on the x1 side of the connecting portion 4821C in the first direction x.
  • the connecting portion 4821D is located on the x2 side of the connecting portion 4821C in the first direction x.
  • the terminal portion 4822D is located on the y2 side of the terminal portion 4822C in the second direction y.
  • the terminal portion 4822D is located on the y1 side of the terminal portion 4822C in the second direction y.
  • the region 482E is located on the y2 side of the connecting portion 4821A in the second direction y, and is located on the x2 side of the connecting portion 4821C in the first direction x.
  • the region 482E is located on the y1 side of the connecting portion 4821A in the second direction y, and is located on the x1 side of the connecting portion 4821C in the first direction x.
  • the region 482E has a shape extending in the second direction y.
  • the area 482E corresponds to the "first area” of the present disclosure.
  • the region 482D corresponds to the "second region” of the present disclosure.
  • the region 482C corresponds to the "third region” of the present disclosure. That is, the region 482C is located between the region 482E and the region 482D in the first direction x.
  • the plurality of regions 482F are arranged alternately in the second direction y with terminal portions 4822A, terminal portions 4822B, terminal portions 4822C, and terminal portions 4822D.
  • the shapes of the plurality of regions 482F are not limited at all, and may be rectangular, circular, etc., and in the illustrated example, they are rectangular.
  • the second sub-metal layer 483 is formed on the lower surface of the sub-insulating layer 481 (the surface on the z2 side in the thickness direction z), as shown in FIGS. 13, 14, 19, etc.
  • the constituent material of the second sub-metal layer 483 includes, for example, Cu (copper) or a Cu (copper) alloy.
  • the thickness of the second sub-metal layer 483 is not limited at all, and is, for example, 0.035 mm or more and 3.0 mm or less.
  • the second sub-metal layer 483 of the first sub-substrate 48A is electrically connected to the first conductive portion 32A.
  • the second sub-metal layer 483 of the second sub-substrate 48B is electrically connected to the second conductive portion 32B.
  • the method of conductively joining the second sub-metal layer 483 to the first conductive part 32A or the second conductive part 32B is not limited at all. Examples of the conductive bonding method include a method using a conductive bonding material, a laser bonding method, an ultrasonic bonding method, a solid phase bonding method, and the like.
  • the second sub-metal layer 483 of the first sub-substrate 48A and the second sub-substrate 48B is connected to the first conductive part 32A and the second It is electrically connected to the conductive portion 32B.
  • solder is used as the conductive bonding material 49.
  • the first sub-board 48A and the second sub-board 48B have a connecting conductive portion 485.
  • the connecting conductive portion 485 connects the region 482E and the second sub-metal layer 483.
  • the specific configuration of the connecting conductive portion 485 is not limited at all.
  • the connecting conductive portion 485 is constituted by a conductive member that penetrates the sub-insulating layer 481 in the thickness direction z.
  • Such a connecting conductive portion 485 includes, for example, a plating material containing Cu (copper), solder, and the like.
  • the connecting conductive portion 485 penetrates the sub-insulating layer 481 and the region 482E.
  • the wire 73 is connected to the region 482E and the connecting portion 4821D on the first sub-board 48A.
  • the wire 73 is bonded to the surface metal layer 4829 of each of the region 482E and the connecting portion 4821D.
  • the constituent material of the wire 73 is not limited at all, and includes, for example, Al (aluminum) or Al (aluminum) alloy.
  • the region 482D is electrically connected to the first conductive portion 32A.
  • the thermistor 17 is connected to the connecting portion 4821C and the connecting portion 4821D on the second sub-board 48B.
  • the thermistor 17 is used as a temperature detection sensor.
  • the semiconductor device A1 may be configured to include, for example, a temperature-sensitive diode in addition to the thermistor 17, or may be configured not to include the thermistor 17 or the like.
  • Wire 71, wire 72, and wire 73 are not connected to first main metal layer 32.
  • the first main metal layer 32 is spaced apart from the plurality of wires 71, 72, 73.
  • Control terminals 45 Each of the plurality of control terminals 45 is a terminal for controlling each first semiconductor element 10A and each second semiconductor element 10B.
  • the multiple control terminals 45 include multiple control terminals 46A, 46B, 46E and multiple control terminals 47A to 47D.
  • the plurality of control terminals 46A, 46B, and 46E are used for controlling each first semiconductor element 10A.
  • the plurality of control terminals 47A to 47D are used for controlling each second semiconductor element 10B.
  • the plurality of control terminals 46A, 46B, and 46E are arranged at intervals in the second direction y.
  • the plurality of control terminals 46A, 46B, 46E are supported by the first conductive part 32A via the first sub-board 48A, as shown in FIGS. 2, 3, 5, 6, 8, and 17. be done.
  • the plurality of control terminals 46A, 46B, and 46E are connected between the plurality of first semiconductor elements 10A and the first terminal 41, the second terminal 42, and the fourth terminal 44 in the first direction x.
  • control terminal 46A is arranged on the terminal portion 4822A.
  • the control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A.
  • a drive signal for driving the plurality of first semiconductor elements 10A is input to the control terminal 46A (for example, a gate voltage is applied).
  • the control terminal 46B is arranged on the terminal portion 4822B.
  • the control terminal 46B is a terminal (source sense terminal) for detecting source signals of the plurality of first semiconductor elements 10A.
  • the voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the plurality of first semiconductor elements 10A is detected from the control terminal 46B.
  • the control terminal 46E is arranged on the terminal portion 4822D.
  • the control terminal 46E is a drain signal detection terminal (drain sense terminal) of the plurality of first semiconductor elements 10A.
  • the voltage (voltage corresponding to the drain current) applied to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A is detected from the control terminal 46E.
  • the control terminal 46E corresponds to the "first control terminal" of the present disclosure.
  • the plurality of control terminals 47A to 47D are arranged at intervals in the second direction y.
  • the plurality of control terminals 47A to 47D are supported by the second conductive portion 32B via the second sub-board 48B, as shown in FIGS. 2, 3, 5, 6, 8, and 18. .
  • the plurality of control terminals 47A to 47D are located between the plurality of second semiconductor elements 10B and the plurality of third terminals 43 in the first direction x, as shown in FIG.
  • control terminal 47A is arranged on the terminal portion 4822A.
  • the control terminal 47A is a terminal (gate terminal) for inputting drive signals for the plurality of second semiconductor elements 10B.
  • a drive signal for driving the plurality of second semiconductor elements 10B is input to the control terminal 47A (for example, a gate voltage is applied).
  • the control terminal 46B is arranged on the terminal portion 4822B.
  • the control terminal 46B is a terminal (source sense terminal) for detecting source signals of the plurality of second semiconductor elements 10B.
  • the voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected from the control terminal 46B.
  • the control terminal 47C is arranged on the terminal portion 4822C.
  • Control terminal 47D is arranged on terminal portion 4822D.
  • the control terminal 47C and the control terminal 47D are terminals that are electrically connected to the thermistor 17.
  • each of the plurality of control terminals 45 includes a holder 451 and a metal pin 452.
  • the holder 451 is made of a conductive material. As shown in FIGS. 13 and 14, the holder 451 is bonded to the first sub-metal layer 482 via a conductive bonding material (not shown).
  • the holder 451 includes a cylindrical portion, an upper end flange, and a lower end flange. The upper end flange is connected above the cylindrical part, and the lower end flange is connected below the cylindrical part.
  • a metal pin 452 is inserted through at least the upper end flange and the cylindrical portion of the holder 451 .
  • Holder 451 is covered with sealing resin 8.
  • the metal pin 452 is a rod-shaped member extending in the thickness direction z.
  • the metal pin 452 is supported by being press-fitted into the holder 451.
  • the metal pin 452 is electrically connected to the first sub-metal layer 482 via at least the holder 451. As shown in FIGS. 1 and 12, the metal pin 452 protrudes from the sealing resin 8 toward the z1 side in the thickness direction z.
  • First conductive member 5, second conductive member 6 The first conductive member 5 and the second conductive member 6, together with the first conductive part 32A and the second conductive part 32B, are connected to the plurality of first semiconductor elements 10A and the plurality of second It constitutes a path for the main circuit current switched by the semiconductor element 10B.
  • the first conductive member 5 and the second conductive member 6 are spaced apart from the first main surface 301A and the second main surface 301B toward the z1 side in the thickness direction z, and are separated from the first main surface 301A and the second main surface 301B in a plan view. It overlaps with surface 301B.
  • the first conductive member 5 and the second conductive member 6 are each made of a metal plate.
  • the metal includes, for example, Cu (copper) or a Cu (copper) alloy.
  • the first conductive member 5 and the second conductive member 6 are appropriately bent metal plates.
  • the first conductive member 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive part 32B, and is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive part 32B. 2 conductive portion 32B.
  • the first conductive member 5 constitutes a path for main circuit current switched by the plurality of first semiconductor elements 10A.
  • the first conductive member 5 includes a main portion 51, a plurality of first joints 52, and a plurality of second joints 53, as shown in FIGS. 7 and 8.
  • the main portion 51 is a band-shaped portion that is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x, and extends in the second direction y in a plan view.
  • the main part 51 overlaps both the first conductive part 32A and the second conductive part 32B in a plan view, and is spaced apart from the first main surface 301A and the second main surface 301B on the z1 side in the thickness direction z. are doing.
  • the main portion 51 is located on the z2 side in the thickness direction z with respect to a third path portion 66 and a fourth path portion 67 of the second conductive member 6, which will be described later. 66 and the fourth path portion 67 are located closer to the first main surface 301A and the second main surface 301B.
  • the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.
  • the main portion 51 extends continuously in the second direction y corresponding to the region where the plurality of first semiconductor elements 10A are arranged.
  • a plurality of first openings 514 are formed in the main portion 51.
  • Each of the plurality of first openings 514 is, for example, a through hole penetrating in the thickness direction z (thickness direction of the main portion 51).
  • the plurality of first openings 514 are arranged at intervals in the second direction y.
  • the plurality of first openings 514 are provided corresponding to each of the plurality of first semiconductor elements 10A.
  • the main portion 51 is provided with four first openings 514, and these first openings 514 and the plurality of (four) first semiconductor elements 10A are located at different positions in the second direction y. equal.
  • each first opening 514 overlaps the gap between the first conductive part 32A and the second conductive part 32B in plan view.
  • the plurality of first openings 514 are formed on the upper side (z1 side in the thickness direction z) in the vicinity of the main portion 51 (first conductive member 5). ) and the lower side (z2 side in the thickness direction z) to facilitate the flow of the resin material.
  • the plurality of first joint parts 52 and the plurality of second joint parts 53 are each connected to the main part 51, and are connected to the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. are arranged accordingly. Specifically, each first joint portion 52 is located on the x1 side of the first direction x with respect to the main portion 51. Each second joint portion 53 is located on the x2 side of the first direction x with respect to the main portion 51. As shown in FIG. 13, the plurality of first bonding parts 52 are individually bonded to the second main surface electrodes 12 of the plurality of first semiconductor elements 10A via a conductive bonding material 59.
  • the plurality of second bonding parts 53 and the second conductive part 32B are bonded via a conductive bonding material 59.
  • the constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste material, or sintered metal.
  • the first joint portion 52 has two portions separated in the second direction y.
  • the second conductive member 6 connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42.
  • the second conductive member 6 is integrally formed with the first terminal 41 and the second terminal 42.
  • the second conductive member 6 constitutes a path for main circuit current switched by the plurality of second semiconductor elements 10B.
  • the second conductive member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 66.
  • a path section 67 is included.
  • the plurality of third bonding parts 61 are parts that are individually bonded to the plurality of second semiconductor elements 10B.
  • Each third bonding portion 61 and the second main surface electrode 12 of each second semiconductor element 10B are bonded via a conductive bonding material 69.
  • the constituent material of the conductive bonding material 69 is not particularly limited, and may be, for example, solder, metal paste material, or sintered metal.
  • the third joint portion 61 has two flat portions 611 and two first inclined portions 612.
  • the two flat parts 611 are lined up in the second direction y.
  • the two flat parts 611 are spaced apart from each other in the second direction y.
  • the shape of the flat portion 611 is not limited at all, and in the illustrated example, it is rectangular.
  • the two flat parts are joined to the second main surface electrode 12 on both sides in the second direction y.
  • the two first inclined parts 612 are connected to the outside of the two flat parts 611 in the second direction y. That is, the first inclined portion 612 located on the y1 side in the second direction y is connected to the y1 side in the second direction y with respect to the flat portion 611 located on the y1 side in the second direction y. Further, the first inclined portion 612 located on the y2 side in the second direction y is connected to the y2 side in the second direction y with respect to the flat portion 611 located on the y2 side in the second direction y.
  • the first inclined portion 612 is inclined so that the farther it is from the flat portion 611 in the second direction y, the more it is located on the z1 side in the thickness direction z.
  • the first path portion 64 is interposed between the plurality of third joint portions 61 and the first terminal 41.
  • the first path section 64 is connected to the first terminal 41 via the first step section 602.
  • the first path portion 64 overlaps the first conductive portion 32A in plan view.
  • the first path portion 64 has a shape that extends in the first direction x as a whole.
  • the first path portion 64 includes a first band portion 641 and a first extension portion 643.
  • the first band portion 641 is located on the x2 side of the first direction x with respect to the first terminal 41, and is approximately parallel to the first main surface 301A.
  • the first band portion 641 has a shape that extends in the first direction x as a whole.
  • the first extending portion 643 extends from the side end of the first strip portion 641 on the y1 side in the second direction y to the z2 side in the thickness direction z.
  • the first extending portion 643 is spaced apart from the first conductive portion 32A.
  • the first extending portion 643 has a shape along the thickness direction z, and has an elongated rectangular shape whose longitudinal direction is the first direction x. Note that the first path portion 64 may be configured without the first extending portion 643.
  • the second path portion 65 is interposed between the plurality of third joint portions 61 and the second terminal 42.
  • the second path section 65 is connected to the second terminal 42 via the second step section 603.
  • the second path portion 65 overlaps the first conductive portion 32A in plan view.
  • the second path portion 65 has a shape that extends in the first direction x as a whole.
  • the second path portion 65 includes a second strip portion 651 and a second extension portion 653.
  • the second strip portion 651 is located on the x2 side of the first direction x with respect to the second terminal 42, and is substantially parallel to the first main surface 301A.
  • the second strip portion 651 has a shape that extends in the first direction x as a whole.
  • the second extending portion 653 extends from the side end of the second strip portion 651 on the y2 side in the second direction y to the z2 side in the thickness direction z.
  • the second extending portion 653 is spaced apart from the first conductive portion 32A.
  • the second extending portion 653 has a shape along the thickness direction z, and has an elongated rectangular shape whose longitudinal direction is the first direction x. Note that the second path portion 65 may be configured without the second extension portion 653.
  • the plurality of third path portions 66 are individually connected to the plurality of third joint portions 61.
  • Each of the third path sections 66 has a shape extending in the first direction x, and is arranged at a distance from each other in the second direction y.
  • the number of the plurality of third path sections 66 is not limited at all, and in the illustrated example, five third path sections 66 are arranged.
  • Each third path section 66 is positioned between the plurality of second semiconductor elements 10B in the second direction y, or located outside of the plurality of second semiconductor elements 10B in the second direction y. It is located.
  • one third joint portion 61 is arranged between two third path portions 66 adjacent to each other in the second direction y.
  • the first inclined portion 612 located on the y1 side in the second direction y is located on the y1 side in the second direction y among the two third path portions 66 adjacent in the second direction y. It is connected to the third path section 66 located there.
  • the first inclined portion 612 located on the y2 side in the second direction y is located on the y2 side in the second direction y among the two third path portions 66 adjacent in the second direction y. It is connected to the third path section 66 located there.
  • the fourth path portion 67 is connected to the end of the plurality of third path portions 66 on the x1 side in the first direction x.
  • the fourth path portion 67 has a shape that extends long in the second direction y.
  • the fourth path portion 67 is connected to the ends of the first band portion 641 of the first path portion 64 and the second band portion 651 of the second path portion 65 on the x2 side in the first direction x.
  • the first path portion 64 is connected to the end of the fourth path portion 67 on the y1 side in the second direction y.
  • the second path portion 65 is connected to the end of the fourth path portion 67 on the y2 side in the second direction y.
  • the sealing resin 8 includes the plurality of first semiconductor elements 10A, the plurality of second semiconductor elements 10B, the main substrate 3 (excluding the back surface 302), the first terminal 41, the second terminal 42, A portion of each of the plurality of third terminals 43 and the fourth terminal 44, a portion of each of the plurality of control terminals 45, the first sub-board 48A and the second sub-board 48B, the first conductive member 5, and the first 2 conductive member 6 and the plurality of wires 71 to 73, respectively.
  • the sealing resin 8 is made of, for example, black epoxy resin.
  • the sealing resin 8 is formed by, for example, molding.
  • the size of the sealing resin 8 is not limited at all, and for example, the dimension in the first direction x is about 35 mm to 60 mm, the dimension in the second direction y is about 35 mm to 50 mm, and the dimension in the thickness direction z is, for example, about 35 mm to 60 mm. is approximately 4 mm to 15 mm. These dimensions are the largest along each direction.
  • the sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.
  • the resin main surface 81 and the resin back surface 82 are separated in the thickness direction z, as shown in FIGS. 10, 12, and 15.
  • the main resin surface 81 faces the z1 side in the thickness direction z
  • the resin back surface 82 faces the z2 side in the thickness direction z.
  • a plurality of control terminals 45 protrude from the resin main surface 81.
  • the resin back surface 82 has a frame shape that surrounds the back surface 302 of the main substrate 3 (the lower surface of the second main metal layer 33) in plan view.
  • the back surface 302 of the main board 3 is exposed from the resin back surface 82, and is flush with the resin back surface 82, for example.
  • Each of the plurality of resin side surfaces 831 to 834 is connected to both the resin main surface 81 and the resin rear surface 82, and is sandwiched between them in the thickness direction z. As shown in FIG. 4 and the like, the resin side surface 831 and the resin side surface 832 are separated from each other in the first direction x.
  • the resin side surface 831 faces the x2 side in the first direction x, and the resin side surface 832 faces the x1 side in the first direction x.
  • Two third terminals 43 protrude from the resin side surface 831, and a first terminal 41, a second terminal 42, and a fourth terminal 44 protrude from the resin side surface 832. As shown in FIG.
  • the resin side surface 833 and the resin side surface 834 are separated in the second direction y.
  • the resin side surface 833 faces the y2 side in the second direction y
  • the resin side surface 834 faces the y1 side in the second direction y.
  • a plurality of recesses 832a are formed in the resin side surface 832.
  • Each recess 832a is a part depressed in the first direction x when viewed from above.
  • the plurality of recesses 832a include those formed between the first terminal 41 and the fourth terminal 44 and those formed between the second terminal 42 and the fourth terminal 44 in plan view.
  • the plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first terminal 41 and the fourth terminal 44, and the creepage distance along the resin side surface 832 between the second terminal 42 and the fourth terminal 44. It is provided.
  • Vehicle B1 is, for example, an electric vehicle (EV).
  • EV electric vehicle
  • vehicle B1 includes an on-vehicle charger 91, a storage battery 92, and a drive system 93.
  • Electric power is wirelessly supplied to the on-vehicle charger 91 from a power supply facility (not shown) installed outdoors.
  • the means for supplying power from the power supply facility to the on-vehicle charger 91 may be wired.
  • the on-vehicle charger 91 includes a step-up DC-DC converter.
  • the voltage of the power supplied to the on-vehicle charger 91 is boosted by the converter and then supplied to the storage battery 92 .
  • the boosted voltage is, for example, 600V.
  • the drive system 93 drives the vehicle B1.
  • Drive system 93 includes an inverter 931 and a drive source 932.
  • Semiconductor device A1 constitutes a part of inverter 931.
  • the power stored in the storage battery 92 is supplied to the inverter 931.
  • the power supplied from the storage battery 92 to the inverter 931 is DC power.
  • a step-up DC-DC converter may be further provided between the storage battery 92 and the inverter 931.
  • Inverter 931 converts DC power into AC power.
  • the inverter 931 including the semiconductor device A1 is electrically connected to a drive source 932.
  • the drive source 932 has an AC motor and a transmission.
  • the AC motor rotates and the rotation is transmitted to the transmission.
  • the transmission rotates the drive shaft of the vehicle B1 after appropriately reducing the number of rotations transmitted from the AC motor.
  • vehicle B1 is driven.
  • it is necessary to freely control the rotation speed of the AC motor based on information such as the amount of change in the accelerator pedal.
  • the semiconductor device A1 in the inverter 931 is necessary to output AC power whose frequency is appropriately changed to correspond to the required rotational speed of the AC motor.
  • the region 482E of the first sub-substrate 48A is electrically connected to the first conductive part 32A via the connecting conductive part 485 and the second sub-metal layer 483. Therefore, in order to conduct the control terminal 46E and the first conductive part 32A shown in FIG. It is not necessary to do so. Therefore, the conduction paths leading to the main board 3 can be set in a greater variety of ways.
  • the first sub-metal layer 482 has a surface metal layer 4829.
  • a plurality of wires 71, 72, 73 are connected to the surface metal layer 4829. Thereby, it is possible to avoid Kirkendall void phenomenon occurring at the connection portion between the plurality of wires 71, 72, 73 and the base material layer 4820.
  • the Kirkendall void phenomenon can be prevented by providing a surface metal layer 4829 containing Ni (nickel). This can be suppressed more reliably.
  • the first conductive part 32A there is no need to connect a wire or the like to the first conductive part 32A for the purpose of detecting the potential in the first conductive part 32A by the control terminal 46E. Therefore, there is no need to provide the first conductive portion 32A with a metal layer or the like for suppressing the Kirkendall void phenomenon. This is preferable for reducing the cost of the semiconductor device A1.
  • the first sub-board 48A and the second sub-board 48B have a common configuration.
  • the first sub-board 48A by connecting the region 482E and the connecting portion 4821D with the wire 73, the potential of the first conductive portion 32A can be detected by the control terminal 46E.
  • the thermistor 17 by connecting the thermistor 17 to the connecting portion 4821C and the connecting portion 4821D, temperature monitoring using the control terminal 47C and the control terminal 47D is possible.
  • FIG. 21 shows a first modification of the semiconductor device A1.
  • the semiconductor device A11 of this modification differs from the above-described example in the configuration of the connecting conductive portion 485.
  • the connecting conductive portion 485 penetrates the first sub-metal layer 482 (region 482E) and the sub-insulating layer 481, and further enters a part of the second sub-metal layer 483.
  • a connection conductive part 485 is formed in the thickness direction z of the first sub-metal layer 482.
  • This removal process may be, for example, mechanical processing or chemical processing such as etching.
  • connection conductive portion 485 can be reliably electrically connected to the second sub-metal layer 483.
  • FIG. 22 shows a second modification of the semiconductor device A1.
  • the connecting conductive portion 485 penetrates the second sub-metal layer 483 and the sub-insulating layer 481, and is in contact with the first sub-metal layer 482 (region 482E).
  • the connecting conductive portion 485 may have a structure that penetrates the first sub-metal layer 482 or a structure that penetrates the second sub-metal layer 483. .
  • FIG. 23 shows a third modification of the semiconductor device A1.
  • the connecting conductive portion 485 penetrates the first sub-metal layer 482 (region 482E), the sub-insulating layer 481, and the second sub-metal layer 483.
  • the connecting conductive portion 485 may be configured to penetrate the entirety of the first sub-board 48A and the second sub-board 48B in the thickness direction z.
  • FIG. 24 shows a fourth modification of the semiconductor device A1.
  • the first sub-substrate 48A has a plurality of connecting conductive parts 485.
  • the first sub-board 48A has three connecting conductive parts 485.
  • One connecting conductive portion 485 connects region 482E and second sub-metal layer 483 to each other.
  • the two connecting conductive parts 485 connect the two regions 482F and the second sub-metal layer 483 to each other.
  • One of the two regions 482F is located closest to y1 in the second direction y among the multiple regions 482F, and the other is located closest to y1 in the second direction y among the multiple regions 482F. This is the third area 482F counting from the side.
  • the number of connected conductive parts 485 is not limited at all.
  • the wires 71 to 73 or the control terminal 45 are not connected to the region 482F. Therefore, even if the region 482F is electrically connected to the second sub-metal layer 483 through the connecting conductive portion 485, the electrical function of the semiconductor device A14 is achieved.
  • FIGS. 25 and 26 show a semiconductor device according to a second embodiment of the present disclosure.
  • the semiconductor device A2 of this embodiment is different from the above-described embodiments in the method of electrically connecting the second sub-metal layer 483 of the first sub-substrate 48A and the first conductive portion 32A.
  • laser bonding is used as a method for electrically bonding the second sub-metal layer 483 of the first sub-substrate 48A and the first conductive portion 32A.
  • An opening 4811 is provided in the sub-insulating layer 481.
  • the opening 4811 penetrates the sub-insulating layer 481 in the thickness direction z, and exposes the second sub-metal layer 483 on the z1 side in the thickness direction z.
  • a joint portion 4839 is formed in the second sub-metal layer 483.
  • the bonding portion 4839 is formed, for example, by irradiating a portion of the second sub-metal layer 483 exposed from the opening 4811 with a laser beam while the first sub-substrate 48A is placed on the first conductive portion 32A. It is formed. Irradiation with laser light causes a portion of the second sub-metal layer 483 and a portion of the first conductive portion 32A to melt with each other, thereby forming a bonding portion 4839 as illustrated.
  • the sub-insulating layer 481 has three openings 4811.
  • the control terminal support body 48 (second sub-metal layer 483) has three joint portions 4839.
  • the three openings 4811 and the three joints 4839 are spaced apart from each other in the second direction y.
  • the two openings 4811 and the two joints 4839 are formed at both ends of the first sub-board 48A in the second direction y.
  • One opening 4811 and one joint 4839 are formed between the terminal portion 4822B and the terminal portion 4822C in the second direction y, and are formed approximately at the center of the first sub-board 48A in the second direction y. ing.
  • the conduction paths leading to the main board 3 can be set in a greater variety. Further, according to laser bonding, it is possible to reduce the amount of heat applied to the first sub-substrate 48A and the first conductive portion 32A when bonding the first sub-substrate 48A to the first conductive portion 32A. This is suitable for suppressing unintended thermal deformation of the first sub-board 48A and the like.
  • FIG. 27 shows a first modification of the semiconductor device A2.
  • a recess 48313 is formed in the second sub-metal layer 483.
  • the recess 4831 is formed by removing a part of the sub-insulating layer 481 after penetrating the sub-insulating layer 481. By irradiating the bottom of the recess 4831 with laser light, a joint 4839 is formed.
  • this modification it is possible to set more diverse conduction paths to the main board 3. Furthermore, in this modification, by forming the recess 4831, the opening 4811 penetrating the sub-insulating layer 481 can be formed more reliably. Therefore, in the laser bonding for forming the bonding portion 4839, it is possible to avoid insufficient formation of the bonding portion 4839 due to a portion of the sub-insulating layer 481 remaining unintentionally.
  • FIG. 28 shows a second modification of the semiconductor device A2.
  • the first sub-metal layer 482 has an opening 4825.
  • the opening 4825 penetrates the first sub-metal layer 482 in the thickness direction z.
  • the opening 4825 substantially coincides with the opening 4811 when viewed in the thickness direction z.
  • the first sub-metal layer 482 may be irradiated with laser light through the opening 4825 and the opening 4811.
  • FIG. 29 shows a third modification of the semiconductor device A2.
  • the sub-insulating layer 481 has an opening 4811
  • the first sub-metal layer 482 has an opening 4825
  • the second sub-metal layer 483 has a recess 4831.
  • the portion of the second sub-metal layer 483 that is irradiated with the laser beam during laser bonding to form the bonding portion 4839 is a portion of the second sub-metal layer 483 that has a thickness from the first sub-metal layer 482.
  • the relationship becomes farther apart on the z2 side of the direction z. Therefore, heat from laser bonding can be suppressed from reaching the first sub-metal layer 482.
  • FIG. 30 shows a fourth modification of the semiconductor device A2.
  • the semiconductor device A24 of this modification differs from the above-described example in the configuration of the two openings 4811 formed at both ends of the first sub-substrate 48A in the second direction y.
  • two openings 4811 formed at both ends of the first sub-board 48A in the second direction y are connected to both ends of the opening 4811 in the second direction y. That is, these openings 4811 do not have a closed shape when viewed in the thickness direction z, but have a shape that opens to the outside of the sub-insulating layer 481.
  • the shape and arrangement of the opening 4811 are not limited at all. According to this modification, the dimension of the first sub-substrate 48A in the second direction y can be reduced compared to, for example, the semiconductor device A2.
  • FIG. 31 shows a semiconductor device according to a third embodiment of the present disclosure.
  • the semiconductor device A3 of this embodiment is different from the above-described embodiments in the configurations of the first sub-substrate 48A and the second sub-substrate 48B.
  • the first sub-board 48A and the second sub-board 48B are made of glass epoxy resin substrates.
  • the sub-insulating layer 481 is a layer made of glass epoxy resin.
  • the first sub-metal layer 482 and the second sub-metal layer 483 are, for example, metal plating layers formed on both surfaces of the sub-insulating layer 481, and contain, for example, Cu (copper).
  • the shape of the first sub-metal layer 482 when viewed in the thickness direction z is similar to, for example, the first sub-metal layer 482 of the semiconductor device A1.
  • the second sub-metal layer 483 is conductively bonded to the first conductive portion 32A or the second conductive portion 32B by, for example, a conductive bonding material 49.
  • the connecting conductive part 485 of this embodiment has a structure called a through-hole conductive part, for example.
  • a through hole is formed that penetrates the sub-insulating layer 481, the first sub-metal layer 482, and the second sub-metal layer 483, and the connecting conductive portion 485 is made of a metal plating layer formed on the inner surface of the through-hole.
  • the conduction paths leading to the main board 3 can be set in a greater variety.
  • the specific configurations of the first sub-board 48A and the second sub-board 48B are not limited at all.
  • the first sub-substrate 48A and the second sub-substrate 48B made of glass epoxy resin substrates are suitable for finishing the first sub-metal layer 482 into a finer shape, for example.
  • FIGS. 32 and 33 show a first modification of the semiconductor device A3.
  • the semiconductor device A31 of this modification differs from the embodiment described above in the configuration of the connecting conductive portion 485.
  • a concave groove extending in the thickness direction z is formed at the end of the sub-insulating layer 481 on the y1 side in the second direction y.
  • the connecting conductive portion 485 is formed to cover the groove, and conducts the first sub-metal layer 482 and the second sub-metal layer 483.
  • the specific configuration of the connecting conductive portion 485 is not limited at all. According to this modification, it can be expected that the conductive bonding material 49 will adhere along the connecting conductive portion 485, as shown in FIG. This is suitable for increasing the bonding strength between the first sub-substrate 48A and the first conductive portion 32A.
  • Appendix 1A a main substrate having a first main metal layer; a first semiconductor element supported by the main substrate; a first sub-board supported by the main board; a sealing resin that covers the first semiconductor element;
  • the first sub-substrate has a sub-insulating layer, and a first sub-metal layer and a second sub-metal layer disposed with the sub-insulating layer in between in the thickness direction,
  • the second sub-metal layer is electrically connected to the first main metal layer
  • the first sub-metal layer includes a first region
  • the first sub-substrate further includes a connecting conductive portion that connects the first region and the second sub-metal layer.
  • Appendix 2A The semiconductor device according to Appendix 1A, wherein the first semiconductor element is electrically connected to the first main metal layer.
  • Appendix 3A The semiconductor device according to appendix 1A or 2A, further comprising a first control terminal that is electrically connected to the first region and protrudes from the sealing resin.
  • Appendix 4A The semiconductor device according to Appendix 3A, wherein the first sub-metal layer further includes a second region separated from the first region.
  • Appendix 5A The semiconductor device according to appendix 4A, wherein the first control terminal is supported by the second region.
  • Appendix 6A The semiconductor device according to appendix 5A, further comprising a first wire connected to the first region and the second region.
  • Appendix 7A The first sub-metal layer further includes a third region separated from the first region and the second region and located between the first region and the second region, according to Appendix 6A.
  • Appendix 8A The semiconductor device according to appendix 6A or 7A, wherein the first sub-metal layer includes a base material layer and a surface metal layer.
  • Appendix 9A The semiconductor device according to appendix 8A, wherein the base material layer contains Cu.
  • Appendix 10A The semiconductor device according to appendix 9A, wherein the surface metal layer contains Ni.
  • Appendix 11A The semiconductor device according to appendix 10A, wherein the first sub-metal layer contains Cu.
  • Appendix 12A The semiconductor device according to appendix 11A, wherein the first wire contains Al.
  • Appendix 13A The semiconductor device according to any one of Appendices 1A to 12A, wherein the second sub-metal layer is conductively bonded to the first main metal layer using a conductive bonding material.
  • Appendix 14A The semiconductor device according to any one of Appendices 1A to 12A, wherein the second sub-metal layer is conductively bonded to the first main metal layer by laser bonding.
  • Appendix 15A The second sub-metal layer has a bonded portion formed by laser bonding, The semiconductor device according to appendix 14A, wherein the second sub-metal layer has an opening that includes the bonding portion when viewed in the thickness direction.
  • Appendix 16A The semiconductor device according to any one of Appendices 1A to 15A, wherein the sub-insulating layer includes ceramics.
  • Appendix 17A The semiconductor device according to any one of Appendices 1A to 15A, wherein the sub-insulating layer includes a glass epoxy resin.
  • Appendix 18A A driving source, A semiconductor device according to any one of Supplementary Notes 1A to 17A, The vehicle, wherein the semiconductor device is electrically connected to the drive source.
  • the semiconductor device A1 of this embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a thermistor 17, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, and a third terminal 43. It includes four terminals 44, a plurality of control terminals 45, a control terminal support 48, a third conductive component 38, wires 71 to 74, a first conductive member 5, a second conductive member 6, and a sealing resin 8.
  • FIG. 34 is a perspective view showing the semiconductor device A1.
  • 35 and 36 are partial perspective views showing the semiconductor device A1.
  • FIG. 37 is a plan view showing the semiconductor device A1.
  • FIG. 38 is a partial plan view showing the semiconductor device A1.
  • FIG. 39 is a partial side view showing the semiconductor device A1.
  • FIG. 40 is a partially enlarged plan view showing the semiconductor device A1.
  • 41 and 42 are partial plan views showing the semiconductor device A1.
  • FIG. 43 is a side view showing the semiconductor device A1.
  • FIG. 44 is a bottom view showing the semiconductor device A1.
  • FIG. 45 is a cross-sectional view taken along the XLV-XLV line in FIG. 38.
  • FIG. 46 is a cross-sectional view taken along the XLVI-XLVI line in FIG. 38.
  • FIG. 49 is a cross-sectional view taken along line XLIX-XLIX in FIG. 38.
  • FIG. 50 is a cross-sectional view taken along line LL in FIG. 38.
  • FIG. 51 is a sectional view taken along the LI-LI line in FIG. 38.
  • FIG. 52 is a cross-sectional view taken along line LII-LII in FIG. 38.
  • FIG. 53 is a sectional view taken along line LIII-LIII in FIG. 38.
  • FIG. 54 is a cross-sectional view taken along the line LIV-LIV in FIG. 42.
  • FIG. 55 is a cross-sectional view of the third conductive component 38.
  • the thickness direction z is the thickness direction of the present disclosure
  • the first direction x is the first direction of the present disclosure
  • the second direction y is the second direction of the present disclosure .
  • one side of the first direction x is referred to as the x1 side of the first direction x
  • the other side of the first direction x is referred to as the x2 side of the first direction x.
  • one side in the second direction y is referred to as the y1 side in the second direction y
  • the other side in the second direction y is referred to as the y2 side in the second direction y.
  • one side in the thickness direction z is referred to as the z1 side in the thickness direction z
  • the other side in the thickness direction z is referred to as the z2 side in the thickness direction z.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are each electronic components that serve as the functional center of the semiconductor device A1.
  • the constituent material of each first semiconductor element 10A and each second semiconductor element 10B is, for example, a semiconductor material mainly composed of SiC (silicon carbide). This semiconductor material is not limited to SiC, and may be Si (silicon), GaN (gallium nitride), C (diamond), or the like.
  • Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is a power semiconductor chip having a switching function, such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor).
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • first semiconductor element 10A and the second semiconductor element 10B are MOSFETs, but the present invention is not limited to this, and other transistors such as IGBTs (Insulated Gate Bipolar Transistors) can be used. There may be.
  • Each first semiconductor element 10A and each second semiconductor element 10B are the same element.
  • Each first semiconductor element 10A and each second semiconductor element 10B is, for example, an n-channel MOSFET, but may be a p-channel MOSFET.
  • the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102, as shown in FIGS. 47 and 48.
  • the element main surface 101 and the element back surface 102 are separated in the thickness direction z.
  • the element main surface 101 faces the z1 side in the thickness direction z
  • the element back surface 102 faces the z2 side in the thickness direction z.
  • the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B, but the number of first semiconductor elements 10A and the number of second semiconductor elements 10B are different from each other. It is not limited to the configuration and may be changed as appropriate depending on the performance required of the semiconductor device A1. In the examples of FIGS. 41 and 42, four first semiconductor elements 10A and four second semiconductor elements 10B are arranged. The number of the first semiconductor elements 10A and the second semiconductor elements 10B may be two or three, or five or more each. The number of first semiconductor elements 10A and the number of second semiconductor elements 10B may be equal or different. The number of first semiconductor elements 10A and second semiconductor elements 10B is determined by the current capacity handled by semiconductor device A1.
  • the semiconductor device A1 is configured, for example, as a half-bridge switching circuit.
  • the plurality of first semiconductor elements 10A constitute an upper arm circuit of the semiconductor device A1
  • the plurality of second semiconductor elements 10B constitute a lower arm circuit.
  • the plurality of first semiconductor elements 10A are connected in parallel with each other
  • the plurality of second semiconductor elements 10B are connected in parallel with each other.
  • Each first semiconductor element 10A and each second semiconductor element 10B are connected in series and constitute a bridge layer.
  • the plurality of first semiconductor elements 10A are each mounted on a first conductive portion 32A of the support substrate 3, which will be described later, as shown in FIGS. 41, 42, and 52.
  • the plurality of first semiconductor elements 10A are arranged, for example, in the second direction y and spaced apart from each other.
  • Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via a first conductive bonding material 19A.
  • the element back surface 102 faces the first conductive part 32A.
  • the plurality of first semiconductor elements 10A may be mounted on a metal member different from a part of the DBC substrate or the like. In this case, the metal member corresponds to the first conductive part in the present disclosure. This metal member may be supported by, for example, the first conductive portion 32A.
  • the plurality of second semiconductor elements 10B are each mounted on a second conductive portion 32B of the support substrate 3, which will be described later, as shown in FIGS. 41, 42, 51, etc.
  • the plurality of second semiconductor elements 10B are lined up in, for example, the second direction y, and are spaced apart from each other.
  • Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via a second conductive bonding material 19B.
  • the element back surface 102 faces the second conductive part 32B.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B overlap, but they do not need to overlap.
  • the plurality of second semiconductor elements 10B may be mounted on a metal member different from a part of the DBC substrate or the like.
  • the metal member corresponds to the second conductive part in the present disclosure. This metal member may be supported, for example, by the second conductive portion 32B.
  • the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B each have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13, and a back electrode 15.
  • the configurations of the first main surface electrode 11, second main surface electrode 12, third main surface electrode 13, and back surface electrode 15 described below are common to each first semiconductor element 10A and each second semiconductor element 10B.
  • the first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are provided on the element main surface 101.
  • the first main surface electrode 11, the second main surface electrode 12, and the third main surface electrode 13 are insulated by an insulating film (not shown).
  • the back electrode 15 is provided on the back surface 102 of the element.
  • the first principal surface electrode 11 is, for example, a gate electrode, and a drive signal (for example, gate voltage) for driving the first semiconductor element 10A (second semiconductor element 10B) is input.
  • the second main surface electrode 12 is, for example, a source electrode, through which a source current flows.
  • the second main surface electrode 12 of this embodiment has a gate finger 121.
  • the gate finger 121 is made of, for example, a linear insulator extending in the first direction x, and divides the second main surface electrode 12 into two in the second direction y.
  • the third main surface electrode 13 is, for example, a source sense electrode, through which a source current flows.
  • the back electrode 15 is, for example, a drain electrode, through which a drain current flows.
  • the back electrode 15 covers substantially the entire area of the back surface 102 of the element.
  • the back electrode 15 is made of, for example, Ag (silver) plating.
  • each first semiconductor element 10A (each second semiconductor element 10B) changes between a conductive state and a disconnected state according to this drive signal. The state changes. In a conductive state, a current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in a cutoff state, this current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching operation.
  • the semiconductor device A1 receives input between one fourth terminal 44 and two first terminals 41 and second terminals 42 due to the switching functions of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. For example, the DC voltage is converted into an AC voltage, and the AC voltage is output from the third terminal 43.
  • the thermistor 17 is used as a temperature detection sensor.
  • the semiconductor device A1 may be configured to include, for example, a temperature-sensitive diode in addition to the thermistor 17, or may be configured not to include the thermistor 17 or the like.
  • the support substrate 3 supports the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.
  • the specific structure of the support substrate 3 is not limited at all, and may be formed of, for example, a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate.
  • Support substrate 3 includes an insulating layer 31, a front metal layer 32, and a back metal layer 33.
  • the surface metal layer 32 includes a first conductive part 32A and a second conductive part 32B.
  • the first conductive part 32A corresponds to the first conductive component of the present disclosure.
  • the dimension of the support substrate 3 in the thickness direction z is, for example, 0.4 mm or more and 3.0 mm or less.
  • the insulating layer 31 is made of, for example, ceramics with excellent thermal conductivity. Such ceramics include, for example, SiN (silicon nitride).
  • the insulating layer 31 is not limited to ceramics, and may be an insulating resin sheet or the like.
  • the insulating layer 31 has, for example, a rectangular shape in plan view.
  • the dimension of the insulating layer 31 in the thickness direction z is, for example, 0.05 mm or more and 1.0 mm or less.
  • the first conductive part 32A supports the plurality of first semiconductor elements 10A
  • the second conductive part 32B supports the plurality of second semiconductor elements 10B.
  • the first conductive part 32A and the second conductive part 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side in the thickness direction z).
  • the constituent material of the first conductive part 32A and the second conductive part 32B includes, for example, Cu (copper).
  • the constituent material may include, for example, Al (aluminum) other than Cu (copper).
  • the first conductive part 32A and the second conductive part 32B are separated in the first direction x.
  • the first conductive part 32A is located on the x1 side of the second conductive part 32B in the first direction x.
  • the first conductive portion 32A and the second conductive portion 32B each have, for example, a rectangular shape in plan view.
  • the first conductive part 32A and the second conductive part 32B, together with the first conductive member 5 and the second conductive member 6, are paths for the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. Configure.
  • the first conductive part 32A has a first main surface 301A.
  • the first main surface 301A is a plane facing the z1 side in the thickness direction z.
  • a plurality of first semiconductor elements 10A are each bonded to the first main surface 301A of the first conductive portion 32A via a first conductive bonding material 19A.
  • the second conductive portion 32B has a second main surface 301B.
  • the second main surface 301B is a plane facing toward the z1 side in the thickness direction z.
  • a plurality of second semiconductor elements 10B are bonded to the second main surface 301B of the second conductive portion 32B via a second conductive bonding material 19B.
  • the constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited, and include, for example, solder, a metal paste material containing a metal such as Ag (silver), or a metal such as Ag (silver). sintered metals, etc.
  • the dimensions of the first conductive part 32A and the second conductive part 32B in the thickness direction z are, for example, 0.1 mm or more and 1.5 mm or less.
  • the back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side in the thickness direction z).
  • the constituent material of the back metal layer 33 is the same as that of the front metal layer 32.
  • Back metal layer 33 has a back surface 302.
  • the back surface 302 is a plane facing the z2 side in the thickness direction z. In the example shown in FIG. 44, the back surface 302 is exposed from the sealing resin 8, for example.
  • a heat dissipating member for example, a heat sink, etc. (not shown) can be attached to the back surface 302.
  • the back surface 302 may not be exposed from the sealing resin 8 and may be covered with the sealing resin 8.
  • the back metal layer 33 overlaps both the first conductive part 32A and the second conductive part 32B in plan view.
  • the first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 are each made of a plate-shaped metal plate.
  • This metal plate includes, for example, Cu (copper) or a Cu (copper) alloy.
  • the number of each terminal is not limited at all.
  • a DC voltage to be subjected to power conversion is input to the first terminal 41, the second terminal 42, and the fourth terminal 44.
  • the fourth terminal 44 is a positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are each negative electrodes (N terminal).
  • P terminal positive electrode
  • N terminal negative electrodes
  • the first terminal 41 , the second terminal 42 , the plurality of third terminals 43 , and the fourth terminal 44 each include a portion covered with the sealing resin 8 and a portion exposed from the sealing resin 8 .
  • the fourth terminal 44 is electrically connected to the first conductive portion 32A.
  • the method of conductive bonding is not limited at all, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. are appropriately employed.
  • the fourth terminal 44 is located on the x1 side in the first direction x with respect to the plurality of first semiconductor elements 10A and the first conductive portion 32A, as shown in FIGS. 41, 42, etc.
  • the fourth terminal 44 is electrically connected to the first conductive portion 32A and, via the first conductive portion 32A, to the back electrode 15 (drain electrode) of each first semiconductor element 10A.
  • the first terminal 41 and the second terminal 42 are electrically connected to the second conductive member 6.
  • the first terminal 41 and the second conductive member 6 are integrally formed.
  • the first terminal 41 and the second conductive member 6 are integrally formed, for example, by cutting and bending a single metal plate material, and are joined together. Refers to a configuration that does not include any bonding materials, etc.
  • the second terminal 42 and the second conductive member 6 are integrally formed. Note that the first terminal 41 and the second terminal 42 may have a structure as long as they are electrically connected to the second conductive member 6, and unlike this embodiment, they may have a structure that has a joint portion that joins them to each other.
  • the first terminal 41 and the second terminal 42 are respectively located on the x1 side in the first direction x with respect to the plurality of first semiconductor elements 10A and the first conductive part 32A, as shown in FIGS. 35, 38, etc. .
  • the first terminal 41 and the second terminal 42 are each electrically connected to the second conductive member 6 and connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive member 6. Conduct.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 each protrude from the sealing resin 8 toward the x1 side in the first direction x in the semiconductor device A1. ing.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other.
  • the first terminal 41 and the second terminal 42 are located on opposite sides of the fourth terminal 44 in the second direction y.
  • the first terminal 41 is located on the y1 side of the fourth terminal 44 in the second direction y
  • the second terminal 42 is located on the y2 side of the fourth terminal 44 in the second direction y.
  • the first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the second direction y.
  • the two third terminals 43 are each electrically connected to the second conductive portion 32B.
  • the method of conductive bonding is not limited at all, and methods such as ultrasonic bonding, laser bonding, welding, or methods using solder, metal paste, silver sintered body, etc. are appropriately employed.
  • the two third terminals 43 are each located on the x2 side of the first direction x with respect to the plurality of second semiconductor elements 10B and the second conductive portion 32B, as shown in FIG. 41 and the like. Each third terminal 43 is electrically connected to the second conductive portion 32B and, via the second conductive portion 32B, to the back electrode 15 (drain electrode) of each second semiconductor element 10B.
  • third terminals 43 is not limited to two, and may be one, for example, or three or more. For example, when there is only one third terminal 43, it is desirable that it is connected to the central portion of the second conductive portion 32B in the second direction y.
  • Each of the plurality of control terminals 45 is a pin-shaped terminal for controlling each first semiconductor element 10A and each second semiconductor element 10B.
  • the plurality of control terminals 45 include a plurality of first control terminals 46A-46E and a plurality of second control terminals 47A-47D.
  • the plurality of first control terminals 46A to 46E are used for controlling each first semiconductor element 10A.
  • the plurality of second control terminals 47A to 47D are used for controlling each second semiconductor element 10B.
  • the plurality of first control terminals 46A to 46E are arranged at intervals in the second direction y.
  • Each of the first control terminals 46A to 46E is supported by the first conductive portion 32A via a control terminal support 48 (a first support portion 48A to be described later), as shown in FIGS. 41, 46, and 53. Ru.
  • each of the first control terminals 46A to 46E connects a plurality of first semiconductor elements 10A, a first terminal 41, a second terminal 42, and a fourth terminal 44 in the first direction x. located between.
  • the first control terminal 46A is a terminal (gate terminal) for inputting a drive signal for the plurality of first semiconductor elements 10A.
  • a drive signal for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A (for example, a gate voltage is applied).
  • the first control terminal 46B is a source signal detection terminal (source sense terminal) of the plurality of first semiconductor elements 10A.
  • the voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the plurality of first semiconductor elements 10A is detected from the first control terminal 46B.
  • the first control terminal 46C and the first control terminal 46D are terminals that are electrically connected to the thermistor 17.
  • the first control terminal 46E is a drain signal detection terminal (drain sense terminal) of the plurality of first semiconductor elements 10A.
  • the voltage (voltage corresponding to the drain current) applied to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A is detected from the first control terminal 46E.
  • the plurality of second control terminals 47A to 47D are arranged at intervals in the second direction y. As shown in FIGS. 41 and 46, each of the second control terminals 47A to 47D is supported by the second conductive portion 32B via a control terminal support 48 (second support portion 48B to be described later). Each of the second control terminals 47A to 47D is located between the plurality of second semiconductor elements 10B and the two third terminals 43 in the first direction x, as shown in FIGS. 38 and 41.
  • the second control terminal 47A is a terminal (gate terminal) for inputting drive signals for the plurality of second semiconductor elements 10B.
  • a drive signal for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A (for example, a gate voltage is applied).
  • the second control terminal 47B is a terminal (source sense terminal) for detecting source signals of the plurality of second semiconductor elements 10B.
  • the voltage (voltage corresponding to the source current) applied to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected from the second control terminal 47B.
  • the second control terminal 47C and the second control terminal 47D are terminals that are electrically connected to the thermistor 17.
  • Each of the plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) includes a holder 451 and a metal pin 452.
  • the holder 451 is made of a conductive material. As shown in FIGS. 47 and 48, the holder 451 is bonded to the control terminal support 48 (first metal layer 482, which will be described later) via a conductive bonding material 459.
  • the holder 451 includes a cylindrical portion, an upper end flange, and a lower end flange. The upper end flange is connected above the cylindrical part, and the lower end flange is connected below the cylindrical part.
  • a metal pin 452 is inserted through at least the upper end flange and the cylindrical portion of the holder 451 .
  • the holder 451 is covered with a sealing resin 8 (a second protrusion 852 to be described later).
  • the metal pin 452 is a rod-shaped member extending in the thickness direction z.
  • the metal pin 452 is supported by being press-fitted into the holder 451.
  • the metal pin 452 is electrically connected to the control terminal support 48 (first metal layer 482 described below) through at least the holder 451.
  • the control terminal support 48 first metal layer 482 described below
  • the metal pin 452 is electrically connected to the control terminal support 48 via the conductive bonding material 459 .
  • the control terminal support 48 supports the plurality of control terminals 45.
  • the control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.
  • the control terminal support 48 includes a first support portion 48A and a second support portion 48B.
  • the first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45.
  • the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49, as shown in FIG.
  • the bonding material 49 may be conductive or insulating, and for example, solder is used.
  • the second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45.
  • the second support portion 48B is bonded to the second conductive portion 32B via a bonding material 49, as shown in FIG.
  • the control terminal support body 48 (each of the first support part 48A and the second support part 48B) is composed of, for example, a DBC (Direct Bonded Copper) board.
  • the control terminal support 48 includes an insulating layer 481, a first metal layer 482, and a second metal layer 483 that are stacked on each other.
  • the insulating layer 481 is made of ceramics, for example.
  • the insulating layer 481 has, for example, a rectangular shape in plan view.
  • the first metal layer 482 is formed on the upper surface of the insulating layer 481, as shown in FIGS. 47, 48, etc. Each control terminal 45 is erected on the first metal layer 482.
  • the first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. As shown in FIG. 41 and the like, the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F.
  • the first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are spaced apart and insulated from each other.
  • the first portion 482A is connected to a plurality of wires 71 and is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each wire 71.
  • a plurality of wires 73 are connected to the first portion 482A and the sixth portion 482F.
  • the sixth portion 482F is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via the wire 73 and the wire 71.
  • the first control terminal 46A is connected to the sixth portion 482F of the first support portion 48A
  • the second control terminal 47A is connected to the sixth portion 482F of the second support portion 48B. It is joined.
  • a plurality of wires 72 are joined to the second portion 482B.
  • the second portion 482B is electrically connected to the third main surface electrode 13 (source sense electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each wire 72.
  • the first control terminal 46B is connected to the second portion 482B of the first support portion 48A
  • the second control terminal 47B is connected to the second portion 482B of the second support portion 48B. It is joined.
  • the thermistor 17 is joined to the third portion 482C and the fourth portion 482D.
  • first control terminals 46C and 46D are joined to the third portion 482C and fourth portion 482D of the first support portion 48A, and the third portion 482C and the fourth portion 482D of the second support portion 48B are Second control terminals 47C and 47D are connected to the fourth portion 482D.
  • the fifth portion 482E is electrically connected to the first conductive portion 32A via the wire 74. As shown in FIG. 41, the first control terminal 46E is joined to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to other components. The surface of the fifth portion 482E is plated with Ni (nickel), which is not shown.
  • the constituent material of the wires 71 to 74 includes, for example, Au (gold), Al (aluminum), or Cu (copper).
  • the second metal layer 483 is formed on the lower surface of the insulating layer 481, as shown in FIGS. 47, 48, etc.
  • the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49, as shown in FIG.
  • the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via a bonding material 49, as shown in FIG.
  • the wire 74 conductively connects the first conductive portion 32A and the fifth portion 482E.
  • Wire 74 corresponds to the second conductive component of the present disclosure.
  • the wire 74 includes a second metal, and in this embodiment, the second metal is the main component.
  • the second metal is, for example, Al (aluminum).
  • the third conductive component 38 is arranged between the surface metal layer 32 and the wire 74, as shown in FIGS. 41, 42, and 45.
  • the surface metal layer 32 contains a first metal, and in this embodiment, has the first metal as its main component.
  • the first metal is, for example, Cu (copper).
  • the third conductive component 38 is located on the y2 side in the y direction with respect to the first support portion 48A.
  • the shape of the third conductive component 38 is not limited at all, and in the illustrated example, it has a rectangular shape when viewed in the z direction.
  • the specific method by which the third conductive component 38 is placed on the surface metal layer 32 is not limited at all.
  • the third conductive component 38 is conductively bonded to the surface metal layer 32 by, for example, a conductive bonding material 39.
  • the third conductive component 38 includes a core material 381 and a first layer 382, as shown in FIGS. 54 and 55.
  • the core material 381 has a first metal as a main component. Further, the core material 381 is conductively bonded to the surface metal layer 32 by a conductive bonding material 39 .
  • the first layer 382 is laminated on the z1 side of the core material 381 in the z direction.
  • the first layer 382 has a third metal as a main component.
  • the third metal is, for example, Ni (nickel).
  • the first layer 382 and the wire 74 are directly bonded.
  • the first layer 382 is formed on the surface of the core material 381 by, for example, plating. In this case, the thickness of the first layer 382 in the z direction is thinner than the thickness of the core material 381 in the z direction.
  • the first conductive member 5 and the second conductive member 6 are spaced apart from the first main surface 301A and the second main surface 301B toward the z1 side in the thickness direction z, and are separated from the first main surface 301A and the second main surface 301B in a plan view. It overlaps with surface 301B.
  • the first conductive member 5 and the second conductive member 6 are each made of a metal plate.
  • the metal includes, for example, Cu (copper) or a Cu (copper) alloy.
  • the first conductive member 5 and the second conductive member 6 are appropriately bent metal plates.
  • the first conductive member 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive part 32B, and is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive part 32B. 2 conductive portion 32B.
  • the first conductive member 5 constitutes a path for main circuit current switched by the plurality of first semiconductor elements 10A.
  • the first conductive member 5 includes a main portion 51, a plurality of first joints 52, and a plurality of second joints 53, as shown in FIGS. 40 and 41.
  • the main portion 51 is a band-shaped portion located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x, and extends in the second direction y in a plan view.
  • the main part 51 overlaps both the first conductive part 32A and the second conductive part 32B in a plan view, and is spaced apart from the first main surface 301A and the second main surface 301B on the z1 side in the thickness direction z. are doing.
  • the main portion 51 is located on the z2 side in the thickness direction z with respect to a third path portion 66 and a fourth path portion 67 of the second conductive member 6, which will be described later, and is located on the z2 side in the thickness direction z. 66 and the fourth path portion 67 are located closer to the first main surface 301A and the second main surface 301B.
  • the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.
  • the main portion 51 extends continuously in the second direction y corresponding to the region where the plurality of first semiconductor elements 10A are arranged.
  • a plurality of first openings 514 are formed in the main portion 51.
  • Each of the plurality of first openings 514 is, for example, a through hole penetrating in the thickness direction z (thickness direction of the main portion 51).
  • the plurality of first openings 514 are arranged at intervals in the second direction y.
  • the plurality of first openings 514 are provided corresponding to each of the plurality of first semiconductor elements 10A.
  • the main portion 51 is provided with four first openings 514, and these first openings 514 and the plurality of (four) first semiconductor elements 10A are located at different positions in the second direction y. equal.
  • each first opening 514 overlaps the gap between the first conductive part 32A and the second conductive part 32B in plan view.
  • the plurality of first openings 514 are formed on the upper side (z1 side in the thickness direction z) in the vicinity of the main portion 51 (first conductive member 5). ) and the lower side (z2 side in the thickness direction z) to facilitate the flow of the resin material.
  • each first joint portion 52 and the plurality of second joint portions 53 are each connected to the main portion 51 and are arranged corresponding to the plurality of first semiconductor elements 10A.
  • each first joint portion 52 is located on the x1 side of the first direction x with respect to the main portion 51.
  • Each second joint portion 53 is located on the x2 side of the first direction x with respect to the main portion 51.
  • each first bonding portion 52 and the corresponding second main surface electrode 12 of one of the first semiconductor elements 10A are bonded via a conductive bonding material 59.
  • Each second joint portion 53 and the second conductive portion 32B are joined via a conductive joining material 59.
  • the constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste material, or sintered metal.
  • the first joint portion 52 has two portions separated in the second direction y. These two parts are joined to the second main surface electrode 12 on both sides in the second direction y, with the gate fingers 121 of the second main surface electrode 12 of the first semiconductor element 10A interposed therebetween.
  • the second conductive member 6 connects the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42.
  • the second conductive member 6 is integrally formed with the first terminal 41 and the second terminal 42.
  • the second conductive member 6 constitutes a path for main circuit current switched by the plurality of second semiconductor elements 10B.
  • the second conductive member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67, as shown in FIG. Further, in the illustrated example, the second conductive member 6 includes a first step portion 602 and a second step portion 603.
  • the plurality of third bonding parts 61 are parts that are individually bonded to the plurality of second semiconductor elements 10B.
  • Each third bonding portion 61 and the second main surface electrode 12 of each second semiconductor element 10B are bonded via a conductive bonding material 69.
  • the constituent material of the conductive bonding material 69 is not particularly limited, and may be, for example, solder, metal paste material, or sintered metal.
  • the third joint portion 61 has two flat portions 611 and two first inclined portions 612.
  • the two flat parts 611 are lined up in the second direction y.
  • the two flat parts 611 are spaced apart from each other in the second direction y.
  • the shape of the flat portion 611 is not limited at all, and in the illustrated example, it is rectangular.
  • the two flat portions 611 are joined to the second main surface electrode 12 on both sides in the second direction y, with the gate finger 121 of the second main surface electrode 12 of the second semiconductor element 10B interposed therebetween.
  • the two first inclined parts 612 are connected to the outside of the two flat parts 611 in the second direction y. That is, the first inclined portion 612 located on the y1 side in the second direction y is connected to the y1 side in the second direction y with respect to the flat portion 611 located on the y1 side in the second direction y. Further, the first inclined portion 612 located on the y2 side in the second direction y is connected to the y2 side in the second direction y with respect to the flat portion 611 located on the y2 side in the second direction y.
  • the first inclined portion 612 is inclined so that the farther it is from the flat portion 611 in the second direction y, the more it is located on the z1 side in the thickness direction z.
  • the first path portion 64 is interposed between the plurality of third joint portions 61 and the first terminal 41.
  • the first path section 64 is connected to the first terminal 41 via the first step section 602.
  • the first path portion 64 overlaps the first conductive portion 32A in plan view.
  • the first path portion 64 has a shape that extends in the first direction x as a whole.
  • the first path portion 64 includes a first strip portion 641 and a first extension portion 643.
  • the first strip portion 641 is located on the x2 side in the first direction x with respect to the first terminal 41, and is substantially parallel to the first main surface 301A.
  • the first strip portion 641 has a shape that extends in the first direction x as a whole.
  • the first strip 641 has a recess 649 .
  • the recessed portion 649 is a portion of the first strip portion 641 that is recessed toward the y1 side in the second direction y.
  • the first extending portion 643 extends from the side end of the first strip portion 641 on the y1 side in the second direction y to the z2 side in the thickness direction z.
  • the first extending portion 643 is spaced apart from the first conductive portion 32A.
  • the first extending portion 643 has a shape along the thickness direction z, and has an elongated rectangular shape whose longitudinal direction is the first direction x.
  • the first path portion 64 may have a configuration in which the first extending portion 643 is not included.
  • the second path portion 65 is interposed between the plurality of third joint portions 61 and the second terminal 42.
  • the second path section 65 is connected to the second terminal 42 via the second step section 603.
  • the second path portion 65 overlaps the first conductive portion 32A in plan view.
  • the second path portion 65 has a shape that extends in the first direction x as a whole.
  • the second path portion 65 includes a second strip portion 651 and a second extension portion 653.
  • the second strip portion 651 is located on the x2 side of the first direction x with respect to the second terminal 42, and is substantially parallel to the first main surface 301A.
  • the second strip portion 651 has a shape that extends in the first direction x as a whole.
  • the second strip portion 651 has a recess 659 .
  • the recessed portion 659 is a portion of the second strip portion 651 that is recessed toward the y2 side in the second direction y.
  • the second extending portion 653 extends from the side end of the second strip portion 651 on the y2 side in the second direction y to the z2 side in the thickness direction z.
  • the second extending portion 653 is spaced apart from the first conductive portion 32A.
  • the second extending portion 653 has a shape along the thickness direction z, and has an elongated rectangular shape whose longitudinal direction is the first direction x. Note that the second path portion 65 may be configured without the second extension portion 653.
  • the configuration regarding the first path section 64 is assumed to have a line-symmetrical relationship with respect to a center line extending in the first direction x, for example. And, it can be appropriately adopted also for the second path section 65.
  • the plurality of third path portions 66 are individually connected to the plurality of third joint portions 61.
  • Each of the third path sections 66 has a shape extending in the first direction x, and is arranged at a distance from each other in the second direction y.
  • the number of the plurality of third path sections 66 is not limited at all, and in the illustrated example, five third path sections 66 are arranged.
  • Each third path section 66 is positioned between the plurality of second semiconductor elements 10B in the second direction y, or located outside of the plurality of second semiconductor elements 10B in the second direction y. It is located.
  • Recesses 669 are formed in the two third path portions 66 located on both outer sides in the second direction y.
  • the recess 669 is recessed from the inside to the outside in the second direction y.
  • one recess 669 is formed in each of the two third path portions 66 .
  • the second conductive portion 32B is exposed through these recesses 669.
  • one third joint portion 61 is arranged between two third path portions 66 adjacent to each other in the second direction y.
  • the first inclined portion 612 located on the y1 side in the second direction y is located on the y1 side in the second direction y among the two third path portions 66 adjacent in the second direction y. It is connected to the third path section 66 located there.
  • the first inclined portion 612 located on the y2 side in the second direction y is located on the y2 side in the second direction y among the two third path portions 66 adjacent in the second direction y. It is connected to the third path section 66 located there.
  • the fourth path portion 67 is connected to the end of the plurality of third path portions 66 on the x1 side in the first direction x.
  • the fourth path portion 67 has a shape that extends long in the second direction y.
  • the fourth path portion 67 is connected to the ends of the first band portion 641 of the first path portion 64 and the second band portion 651 of the second path portion 65 on the x2 side in the first direction x.
  • the first path portion 64 is connected to the end of the fourth path portion 67 on the y1 side in the second direction y.
  • the second path portion 65 is connected to the end of the fourth path portion 67 on the y2 side in the second direction y.
  • the sealing resin 8 includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a support substrate 3 (excluding the back surface 302), a first terminal 41, a second terminal 42, and a plurality of third terminals. 43, a portion of the fourth terminal 44, a portion of the plurality of control terminals 45, the control terminal support 48, the first conduction member 5, the second conduction member 6, and the plurality of wires 71 to 43.
  • the wires 74 and 74 are respectively covered.
  • the sealing resin 8 is made of, for example, black epoxy resin.
  • the sealing resin 8 is formed by, for example, molding.
  • the sealing resin 8 has, for example, a dimension of about 35 mm to 60 mm in the first direction x, a dimension of about 35 mm to 50 mm in the second direction y, and a dimension of about 4 mm to 15 mm in the thickness direction z, for example. . These dimensions are the largest along each direction.
  • the sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.
  • the resin main surface 81 and the resin back surface 82 are separated in the thickness direction z, as shown in FIGS. 43, 45, and 51.
  • the main resin surface 81 faces the z1 side in the thickness direction z
  • the resin back surface 82 faces the z2 side in the thickness direction z.
  • a plurality of control terminals 45 protrude from the main resin surface 81.
  • the resin back surface 82 has a frame shape that surrounds the back surface 302 of the support substrate 3 (the lower surface of the back metal layer 33) in plan view.
  • the back surface 302 of the support substrate 3 is exposed from the resin back surface 82, and is flush with the resin back surface 82, for example.
  • Each of the plurality of resin side surfaces 831 to 834 is connected to both the resin main surface 81 and the resin rear surface 82, and is sandwiched between them in the thickness direction z. As shown in FIG. 37 and the like, the resin side surface 831 and the resin side surface 832 are separated in the first direction x.
  • the resin side surface 831 faces the x2 side in the first direction x
  • the resin side surface 832 faces the x1 side in the first direction x.
  • Two third terminals 43 protrude from the resin side surface 831, and a first terminal 41, a second terminal 42, and a fourth terminal 44 protrude from the resin side surface 832.
  • the resin side surface 833 and the resin side surface 834 are separated from each other in the second direction y.
  • the resin side surface 833 faces the y2 side in the second direction y
  • the resin side surface 834 faces the y1 side in the second direction y.
  • a plurality of recesses 832a are formed in the resin side surface 832.
  • Each recessed portion 832a is a portion depressed in the first direction x when viewed from above.
  • the plurality of recesses 832a include those formed between the first terminal 41 and the fourth terminal 44 and those formed between the second terminal 42 and the fourth terminal 44 in plan view.
  • the plurality of recesses 832a are provided to increase the creepage distance along the resin side surface 832 between the first terminal 41 and the fourth terminal 44, and the creepage distance along the resin side surface 832 between the second terminal 42 and the fourth terminal 44. It is provided.
  • the sealing resin 8 has a plurality of first protrusions 851, a plurality of second protrusions 852, and a resin cavity 86, as shown in FIGS. 45 and 46.
  • the plurality of first protrusions 851 each protrude from the main resin surface 81 in the thickness direction z.
  • the plurality of first protrusions 851 are arranged near the four corners of the sealing resin 8 in plan view.
  • a first protruding end surface 851a is formed at the tip of each first protruding portion 851 (the end on the z1 side in the thickness direction z).
  • Each first protruding end surface 851a of the plurality of first protrusions 851 is substantially parallel to the main resin surface 81 and on the same plane (xy plane).
  • Each first protrusion 851 is, for example, shaped like a hollow truncated cone with a bottom.
  • the plurality of first protrusions 851 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or the like of a device that uses a power source generated by the semiconductor device A1.
  • Each of the plurality of first protrusions 851 has a recess 851b and an inner wall surface 851c formed in the recess 851b.
  • the shape of each first protrusion 851 may be columnar, and is preferably columnar. It is preferable that the recess 851b has a cylindrical shape, and the inner wall surface 851c has a single perfect circular shape in plan view.
  • the semiconductor device A1 may be mechanically fixed to a control circuit board or the like by a method such as screwing.
  • a female thread can be formed on the inner wall surface 851c of the recess 851b in the plurality of first protrusions 851.
  • Insert nuts may be embedded in the recesses 851b of the plurality of first protrusions 851.
  • the plurality of second protrusions 852 protrude from the main resin surface 81 in the thickness direction z, as shown in FIG. 46 and the like.
  • the plurality of second protrusions 852 overlap the plurality of control terminals 45 in plan view.
  • Each metal pin 452 of the plurality of control terminals 45 protrudes from each second protrusion 852 .
  • Each second protrusion 852 has a truncated cone shape.
  • the second protrusion 852 covers the holder 451 and a portion of the metal pin 452 at each control terminal 45 .
  • the third conductive component 38 is disposed between the surface metal layer 32 and the wire 74.
  • the third conductive component 38 includes a third metal different from the first metal and the second metal. Therefore, direct contact between the member made of the first metal and the member made of the second metal can be avoided, and unintended phenomena can be suppressed from occurring.
  • the Kirkendall phenomenon may occur, for example, when left at high temperatures. Therefore, by using Ni (nickel) as the third metal, it is possible to suppress the Kirkendall phenomenon from occurring.
  • the third conductive component 38 may be divided into a core material and a first layer 382, and the first layer 382 mainly composed of a third metal may be formed on the surface in contact with the wire 74. This is because, in order to suppress the Kirkendall phenomenon, it is sufficient to form only the surface in contact with the wire 74 with a material whose main component is the third metal. Thereby, the cost of forming the third conductive component 38 can be reduced.
  • the third conductive component 38 is bonded to the surface metal layer 32 via a conductive bonding material 39.
  • a second layer containing a third metal as a main component is formed on the surface of the third conductive component 38 that is in contact with the conductive bonding material 39 . Thereby, occurrence of the Kirkendall phenomenon between the third conductive component 38 and the conductive bonding material 39 can be suppressed.
  • the control terminal support 48 has the insulating layer 31 and a first metal layer 482 and a second metal layer 483 on both sides thereof.
  • the control terminal support 48 is located on the support substrate 3. In this case, by making the thickness T1 of the third conductive component 38 smaller than the thickness T2 of the control terminal support 48, it is possible to prevent other components from getting caught on the third conductive component 38 during assembly.
  • the first terminal 41 and the second conductive member 6 are integrally formed. Thereby, compared to a configuration in which the first terminal 41 and the second conductive member 6 are joined, it is possible to reduce the number of joining steps in the manufacturing process of the semiconductor device A1. Moreover, it is possible to avoid cracking, peeling, etc. from occurring at the bonded portion when the semiconductor device A1 is used. Therefore, it is possible to simplify the manufacturing process of the semiconductor device A1 or improve its reliability during use.
  • the second terminal 42 and the second conductive member 6 are integrally formed. Thereby, compared to a configuration in which the second terminal 42 and the second conductive member 6 are joined, it is possible to reduce the number of joining steps in the manufacturing process of the semiconductor device A1. Moreover, it is possible to avoid cracking, peeling, etc. from occurring at the bonded portion when the semiconductor device A1 is used. Therefore, it is possible to simplify the manufacturing process of the semiconductor device A1 or improve its reliability during use.
  • the second conductive member 6 has a first stepped portion 602 connected to the first terminal 41. Thereby, the rigidity of the connecting portion between the second conductive member 6 and the first terminal 41 can be increased.
  • the second conductive member 6 has a second stepped portion 603 connected to the second terminal 42. Thereby, the rigidity of the connecting portion between the second conductive member 6 and the second terminal 42 can be increased.
  • the third joint part 61 has two flat parts 611 and two first slope parts 612.
  • the two first inclined parts 612 are connected to the outside of the two flat parts 611 in the second direction y. Therefore, the current flowing through the second main surface electrode 12 flows from the second main surface electrode 12 to both sides in the second direction y via the flat part 611 and the first slope part 612. Thereby, it is possible to suppress the current flowing through the second main surface electrode 12 from concentrating in one place.
  • the two flat parts 611 are separated in the second direction y. This allows current to flow reliably through both the two flat parts 611 and the two first slope parts 612, which is preferable for suppressing current concentration.
  • the gate finger 121 of the second main surface electrode 12 can be placed between them.
  • One third joint portion 61 is arranged between two third path portions 66 adjacent in the second direction y. Thereby, it is possible to distribute the current flowing through the second main surface electrode 12 of one second semiconductor element 10B to the two third path sections 66.
  • This modification relates to the third conductive component 38.
  • the first layer 382 is locally formed only in the portion in contact with the wire 74. That is, the first layer 382 is smaller than the core material 381 when viewed in the z direction. Since the Kirkendall phenomenon occurs at the joint portion between the wire 74 and the third conductive component 38, the first layer 382 may be formed only at that portion.
  • the third conductive component 38 of this modification further includes a second layer 383.
  • the second layer 383 is provided on the side opposite to the first layer 382 with respect to the core material 381, and is formed on the surface in contact with the conductive bonding material 39.
  • the Kirkendall phenomenon can also be prevented from occurring in this portion.
  • the third conductive component 38 further includes a third layer 384, a fourth layer 385, a fifth layer 386, and a sixth layer 387.
  • the third layer 384, the fourth layer 385, the fifth layer 386, and the sixth layer 387 individually cover the four sides of the core material 381.
  • 60 to 64 show a fifth embodiment of the present disclosure.
  • the arrangement position and number of the third conductive components 38 are different from the above-mentioned example.
  • control terminal support 48 corresponds to the first conductive component of the present disclosure
  • wires 71 to 74 correspond to the second conductive component of the present disclosure
  • a plurality of third conductive components 38 are connected to the wires 71 to 74.
  • the plurality of third conductive components 38 are joined to the plurality of control terminal supports 48 via a conductive bonding material 39.
  • the wire 71 connects the first main surface electrode 11 and the first portion 482A.
  • the third conductive component 38 is arranged between the first portion 482A and the wire 71.
  • the first portion 482A corresponds to the first conductive component of the present disclosure
  • the wire 71 corresponds to the second conductive component.
  • the core material 381 is electrically bonded to the first portion 482A by the electrically conductive bonding material 39.
  • the first layer 382 and the wire 71 are directly bonded.
  • the wire 72 connects the third main surface electrode 13 and the second portion 482B.
  • the third conductive component 38 is disposed between the second portion 482B and the wire 72.
  • the second portion 482B corresponds to the first conductive component of the present disclosure
  • the wire 72 corresponds to the second conductive component.
  • the core material 381 is conductively joined to the second portion 482B by the conductive joining material 39.
  • the first layer 382 and the wire 72 are directly bonded.
  • FIG. 63 two third conductive components 38 are shown.
  • the wire 73 connects the first portion 482A and the sixth portion 482F.
  • one third conductive component 38 is disposed between the first portion 482A and the wire 73
  • the other third conductive component 38 is disposed between the sixth portion 482F and the wire 73. It is located.
  • the first portion 482A and the sixth portion 482F correspond to the first conductive component of the present disclosure
  • the wire 73 corresponds to the second conductive component.
  • the core material 381 is conductively joined to the first portion 482A and the sixth portion 482F, respectively, by the conductive joining material 39.
  • the first layer 382 and the wire 73 are directly bonded.
  • FIG. 64 two third conductive components 38 are shown.
  • the wire 74 connects the first portion 482A and the surface metal layer 32.
  • one third conductive component 38 is disposed between the first portion 482A and the wire 74
  • the other third conductive component 38 is disposed between the surface metal layer 32 and the wire 74. has been done.
  • the first portion 482A and the surface metal layer 32 correspond to a first conductive component of the present disclosure
  • the wire 74 corresponds to a second conductive component.
  • the core material 381 is conductively bonded to the first portion 482A and the surface metal layer 32 by a conductive bonding material 39, respectively.
  • the first layer 382 and the wire 74 and the surface metal layer 32 and the wire 74 are directly bonded.
  • the Kirkendall phenomenon that may occur between the control terminal support 48 and the wires 71 to 74 can also be suppressed.
  • the semiconductor device A3 shows a semiconductor device according to a sixth embodiment of the present disclosure.
  • the arrangement position of the third conductive component 38 and the shape of the second conductive member 6 are different from the above-described example.
  • the semiconductor device A3 further includes wires 75 and 76.
  • the number and thickness of the wires 75 and 76 are not limited, it is desirable to use wires that are thicker than the wires 71 to 74 and have a number of wires, for example, about four, in order to pass a large current.
  • the wire 75 connects the second conductive portion 32B and the first semiconductor element 10A.
  • the third conductive component 38 is arranged between the second conductive part 32B and the wire 75.
  • the second conductive part 32B corresponds to the first conductive component
  • the wire 75 corresponds to the second conductive component.
  • the core material 381 is electrically bonded to the second conductive portion 32B by the electrically conductive bonding material 39.
  • the first layer 382 and the wire 75 are directly bonded.
  • the shape of the second conductive member 6 is different from the fourth embodiment in that the length in the first direction x is short. Therefore, the wire 76 connects the second conductive member 6 and the second semiconductor element 10B.
  • the third conductive component 38 is arranged between the third path section 66 and the wire 76.
  • An insulator 324 is interposed between the third path portion 66 and the first conductive portion 32A.
  • the insulator 324 is a member having electrical insulation properties.
  • the second conductive member 6 corresponds to the first conductive component of the present disclosure
  • the wire 76 corresponds to the second conductive component of the present disclosure.
  • the core material 381 is conductively bonded to the second conductive member 6 by the conductive bonding material 39 .
  • the first layer 382 and the wire 76 are directly bonded.
  • the Kirkendall phenomenon that may occur between the second conductive portion 32B and the wire 75 and between the second conductive member 6 and the wire 76 can also be suppressed.
  • the semiconductor device according to the present disclosure is not limited to the embodiments described above.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be changed in design in various ways.
  • Appendix 1B a first conductive component including a first metal; a second conductive component including a second metal; a third conductive component including a third metal; the first metal, the second metal and the third metal are different from each other; A semiconductor device in which a third conductive component is disposed between the first conductive component and the second conductive component.
  • Appendix 2B Appendix
  • the third conductive component has a core material and a first layer, The main component of the core material is the first metal, The main component of the first layer is the third metal, The semiconductor device according to appendix 1B, wherein the first layer and the second conductive component are directly bonded. Appendix 3B.
  • the third conductive component further includes a second layer, the second layer is located on the opposite side of the first layer, The main component of the second layer is the third metal, The semiconductor device according to appendix 2B, wherein the second layer and the first conductive component are electrically connected.
  • Appendix 4B The semiconductor device according to any one of Appendices 1B to 3B, wherein the first metal is Cu. Appendix 5B.
  • the semiconductor device according to any one of Appendices 1B to 9B, wherein the first conductive component is plate-shaped.
  • Appendix 11B The semiconductor device according to any one of appendices 1B to 10B, wherein the second conductive component is a wire.
  • Appendix 12B The semiconductor device according to any one of appendices 1B to 11B, wherein a conductive bonding material is interposed between the first conductive component and the third conductive component.
  • Appendix 13B a supporting substrate having an insulating layer and a conductive layer on both sides thereof; one of the conductive layers is the first conductive component, The semiconductor device according to any one of appendices 1B to 12B, wherein a semiconductor element is electrically connected to the first conductive component.
  • Appendix 14B further comprising a control terminal support having an insulating layer and a conductive first metal layer and a second conductive metal layer on opposite sides thereof, respectively; the control terminal support is located on the support substrate; The semiconductor device according to appendix 13B, wherein the thickness of the third conductive component is smaller than the thickness of the control terminal support.
  • Appendix 15B The semiconductor device according to appendix 13B or 14B, wherein the control terminal support body is directly connected to the second conductive component.

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Physics & Mathematics (AREA)
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PCT/JP2023/030456 2022-09-13 2023-08-24 半導体装置 Ceased WO2024057860A1 (ja)

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CN202380064833.1A CN119856282A (zh) 2022-09-13 2023-08-24 半导体装置
DE112023003434.6T DE112023003434T5 (de) 2022-09-13 2023-08-24 Halbleitervorrichtung
US19/074,964 US20250210532A1 (en) 2022-09-13 2025-03-10 Semiconductor device

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018143429A1 (ja) * 2017-02-06 2018-08-09 三菱電機株式会社 電力用半導体モジュールおよび電力変換装置
WO2018194153A1 (ja) * 2017-04-21 2018-10-25 三菱電機株式会社 電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法
WO2020071185A1 (ja) * 2018-10-02 2020-04-09 ローム株式会社 半導体装置および半導体装置の製造方法
JP2021197389A (ja) * 2020-06-10 2021-12-27 住友電気工業株式会社 半導体装置
WO2022080063A1 (ja) * 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018143429A1 (ja) * 2017-02-06 2018-08-09 三菱電機株式会社 電力用半導体モジュールおよび電力変換装置
WO2018194153A1 (ja) * 2017-04-21 2018-10-25 三菱電機株式会社 電力用半導体モジュール、電子部品および電力用半導体モジュールの製造方法
WO2020071185A1 (ja) * 2018-10-02 2020-04-09 ローム株式会社 半導体装置および半導体装置の製造方法
JP2021197389A (ja) * 2020-06-10 2021-12-27 住友電気工業株式会社 半導体装置
WO2022080063A1 (ja) * 2020-10-14 2022-04-21 ローム株式会社 半導体モジュール

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