Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32917—Plasma diagnostics
  • H01J37/32926—Software, data control or modelling
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0602—Temperature monitoring
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32715—Workpiece holder
  • H01J37/32724—Temperature
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/3288—Maintenance
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
  • H10P72/0432—Apparatus for thermal treatment mainly by conduction
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
  • H10P72/722—Details of electrostatic chucks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
  • H01J2237/2007—Holding mechanisms
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/245—Detection characterised by the variable being measured
  • H01J2237/24571—Measurements of non-electric or non-magnetic variables
  • H01J2237/24585—Other variables, e.g. energy, mass, velocity, time, temperature
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/245—Detection characterised by the variable being measured
  • H01J2237/24592—Inspection and quality control of devices

Definitions

• the present disclosure relates to a parameter estimation system, a parameter estimation method, a computer program, and a substrate processing apparatus.
• Patent Document 1 discloses a plasma processing apparatus that has a function of measuring the temperature of a substrate support using a sensor and adjusting the temperature of the substrate support according to the measured value.
• the present disclosure provides a parameter estimation system, a parameter estimation method, a computer program, and a substrate processing apparatus that can estimate parameters in a physical model for calculating temperature transition of a substrate mounting table.
• a parameter estimation system is a parameter estimation system for a substrate processing apparatus including a substrate mounting table and a cooling base that controls the temperature of the substrate mounting table via a cooling layer, an acquisition unit that acquires temperature time-series data obtained by measuring the temperature of the substrate mounting table over time when increasing the temperature of the substrate mounting table; and calculating temperature transitions of the substrate mounting table using a physical model.
• an error calculation unit that calculates an error between the temperature time series data acquired by the acquisition unit and the temperature transition data obtained from the model calculation unit, and an error calculation unit that calculates the error calculated by the error calculation unit.
• an estimation unit that estimates parameters including a value of heat input to the substrate mounting table and a value of thermal resistance of the cooling layer in the physical model.
• parameters in a physical model for calculating the temperature transition of the substrate mounting table can be estimated.
• FIG. 1 is a schematic diagram showing a configuration example of a plasma processing system.
• FIG. 3 is an explanatory diagram illustrating a substrate temperature adjustment mechanism. It is a graph showing a change in temperature of an electrostatic chuck over time. It is a graph showing changes in a temperature increase curve when parameters are changed. It is a graph showing changes in a temperature increase curve when parameters are changed. It is a graph showing the distribution of errors when changing parameters. 7 is a graph showing the distribution of errors in the diagonal direction. It is a flowchart which shows the procedure of the process performed by the control part of a plasma processing system. 7 is a flowchart illustrating a procedure of processing executed by a processing unit in Embodiment 2.
• FIG. 3 is an explanatory diagram illustrating a substrate temperature adjustment mechanism. It is a graph showing a change in temperature of an electrostatic chuck over time. It is a graph showing changes in a temperature increase curve when parameters are changed. It is a graph showing changes in a temperature increase curve when parameters are changed. It
• FIG. 12 is a flowchart illustrating a procedure of processing executed by a processing unit in Embodiment 3.
• 12 is a flowchart illustrating a procedure of processing executed by a processing unit in Embodiment 4.
• 7 is a schematic diagram showing the configuration of an electrostatic chuck in Embodiment 5.
• FIG. 1 is a schematic diagram showing an example of the configuration of a plasma processing system 1.
• the plasma processing system 1 includes a plasma processing apparatus 1a and a control unit 1b.
• the plasma processing apparatus 1a includes a plasma processing chamber 10, a gas supply section 20, an RF (Radio Frequency) power supply section 30, and an exhaust system 40.
• the plasma processing apparatus 1a includes a support section 11 and an upper electrode showerhead 12.
• the support part 11 is arranged in the lower region of the plasma processing space 10s in the plasma processing chamber 10.
• Upper electrode showerhead 12 is disposed above support 11 and may function as part of the ceiling of plasma processing chamber 10 .
• the support part 11 is configured to support the substrate W in the plasma processing space 10s.
• the support 11 includes a lower electrode 111, an electrostatic chuck 112, and an edge ring 113.
• the electrostatic chuck 112 is disposed on the lower electrode 111 and is configured to support the substrate W on the upper surface of the electrostatic chuck 112.
• Electrostatic chuck 112 is made of ceramic.
• the edge ring 113 is arranged to surround the substrate W on the upper surface of the peripheral edge of the lower electrode 111.
• the support section 11 may include a temperature control module configured to adjust at least one of the electrostatic chuck 112 and the substrate W to a target temperature.
• the temperature control module may include a heater, a flow path, or a combination thereof.
• a temperature regulating fluid such as a refrigerant or a heat transfer gas flows through the flow path.
• the upper electrode showerhead 12 is configured to supply one or more processing gases from the gas supply section 20 to the plasma processing space 10s.
• the upper electrode showerhead 12 has a gas inlet 12a, a gas diffusion chamber 12b, and a plurality of gas outlets 12c.
• Gas inlet 12a is in fluid communication with gas supply 20 and gas diffusion chamber 12b.
• the plurality of gas outlets 12c are in fluid communication with the gas diffusion chamber 12b and the plasma processing space 10s.
• the top electrode showerhead 12 is configured to supply one or more process gases from a gas inlet 12a to the plasma processing space 10s via a gas diffusion chamber 12b and a plurality of gas outlets 12c.
• the gas supply unit 20 may include one or more gas sources 21 and one or more flow controllers 22.
• the gas supply 20 is configured to supply one or more process gases from a respective gas source 21 to the gas inlet 12a via a respective flow controller 22.
• Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller.
• gas supply 20 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more process gases.
• RF power supply 30 supplies RF power, e.g., one or more RF signals, to one or more of lower electrode 111 , upper electrode showerhead 12 , or both lower electrode 111 and upper electrode showerhead 12 . is configured to supply the electrodes. Thereby, plasma is generated from one or more processing gases supplied to the plasma processing space 10s. Accordingly, RF power supply 30 may function as at least part of a plasma generation unit configured to generate a plasma from one or more process gases in a plasma processing chamber. In one embodiment, the RF power supply section 30 includes two RF generation sections 31a, 31b and two matching circuits 32a, 32b.
• the RF power supply section 30 is configured to supply the first RF signal from the first RF generation section 31a to the lower electrode 111 via the first matching circuit 32a.
• the first RF signal may have a frequency within the range of 27 MHz to 100 MHz.
• the RF power supply section 30 is configured to supply the second RF signal from the second RF generation section 31b to the lower electrode 111 via the second matching circuit 32b.
• the second RF signal may have a frequency within the range of 400kHz to 13.56MHz.
• a DC (Direct Current) pulse generator may be used in place of the second RF generator 31b.
• the RF power supply 30 provides a first RF signal from an RF generator to the bottom electrode 111 and a second RF signal from another RF generator to the bottom electrode 111;
• the third RF signal may be further configured to be supplied to the lower electrode 111 from another RF generation section.
• a DC voltage may be applied to the top electrode showerhead 12.
• the amplitude of one or more RF signals may be pulsed or modulated.
• Amplitude modulation may include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.
• the exhaust system 40 may be connected to an exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example.
• Evacuation system 40 may include a pressure valve and a vacuum pump.
• the vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.
• the controller 1b processes computer-executable instructions that cause the plasma processing apparatus 1a to perform various steps described in this disclosure.
• the control unit 1b may be configured to control each element of the plasma processing apparatus 1a to perform the various steps described herein. In one embodiment, a part or all of the control unit 1b may be included in the plasma processing apparatus 1a.
• the control unit 1b may include a computer 51, for example.
• the computer 51 may include, for example, a processing unit (CPU: Central Processing Unit) 511, a storage unit 512, and a communication interface 513.
• the processing unit 511 may be configured to perform various control operations based on programs stored in the storage unit 512.
• the storage unit 512 may include a RAM (Random Access Memory), a ROM (Read Only Memory), an HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof.
• the communication interface 513 may communicate with the plasma processing apparatus 1a via a communication line such as a LAN (Local Area Network).
• the storage unit 512 may store various computer programs executed by the processing unit 511.
• the computer program stored in the storage unit 512 causes the processing unit 511 to execute a process of estimating parameters used in the physical model for calculating the temperature transition of the electrostatic chuck 112 (substrate mounting table).
• It includes a computer program PG for making the computer program.
• the computer program PG is provided by the recording medium RM or by communication.
• the computer program PG may be a single computer program or a program group composed of multiple computer programs. Further, the computer program PG may partially use an existing library.
• FIG. 2 is an explanatory diagram illustrating the substrate temperature adjustment mechanism.
• the support section 11 of the plasma processing apparatus 1a includes a lower electrode 111 and an electrostatic chuck 112.
• the lower electrode 111 is configured to function as a cooling base for cooling the electrostatic chuck 112.
• the electrostatic chuck 112 is provided as a substrate mounting table on which a substrate W to be processed is placed.
• the lower electrode 111 and the electrostatic chuck 112 are bonded together by an adhesive layer 110.
• a coolant flow path 62 is formed inside the lower electrode 111.
• a coolant is supplied to the coolant channel 62 via an inlet pipe 61 from a chiller unit 60 provided outside the plasma processing chamber 10 .
• An appropriate medium such as brine is used as the refrigerant.
• the refrigerant supplied to the refrigerant flow path 62 flows back to the chiller unit 60 through the outlet pipe 63.
• a heater 71 and a temperature sensor 72 are provided inside the electrostatic chuck 112.
• the heater 71 is connected to a heater power supply 70 provided outside the plasma processing chamber 10, generates heat according to the power supplied from the heater power supply 70, and heats the substrate W placed on the electrostatic chuck 112. configured to heat.
• a heater power supply 70 provided outside the plasma processing chamber 10.
• the temperature sensor 72 is, for example, a thermocouple, and is provided at one or more locations within the electrostatic chuck 112. The temperature sensor 72 outputs temperature time-series data to the control unit 1b by measuring the temperature at the installation location over time.
• an adhesive with high thermal conductivity can be used as the material for the adhesive layer 110.
• the adhesive layer 110 functions as a cooling layer interposed between the lower electrode 111 (cooling base) and the electrostatic chuck 112 (substrate mounting stage).
• an adhesive having high electrical resistance may be used to provide a function of electrically insulating the lower electrode 111 and the electrostatic chuck 112.
• silicone-based materials, acrylic-based or acrylate-based acrylic materials, or organic adhesives containing polyimide-silica-based materials can be used as the adhesive having high thermal conductivity and high electrical resistance.
• the control unit 1b of the plasma processing apparatus 1a controls the chiller unit 60 and the heater power supply 70 based on the temperature of the electrostatic chuck 112 measured by the temperature sensor 72. That is, the control unit 1b controls the temperature and flow rate of the refrigerant supplied by the chiller unit 60, and also controls the magnitude of the electric power supplied to the heater 71 by the heater power supply 70, so that the temperature of the electrostatic chuck 112 is set to the target. Adjust the temperature so that the temperature is the same.
• the electrostatic chuck 112 In plasma processing, it is desirable that the surface temperature of the electrostatic chuck 112 be uniform over the entire surface.
• the electrostatic chuck 112 is provided with the heater 71 and the temperature sensor 72 described above, and is also provided with various mechanisms such as a plurality of lift pins for lifting the substrate W after processing to a required height. Due to such a mechanical structure of the electrostatic chuck 112, spots (hereinafter also referred to as singular points) that locally become high or low temperature appear on the surface of the electrostatic chuck 112. Furthermore, due to the appearance of singular points, variations occur in the surface temperature distribution of the electrostatic chuck 112. Variations in the surface temperature distribution in the electrostatic chuck 112 are a factor in reducing uniformity when processing the substrate W.
• the heat input to the electrostatic chuck 112 and the temperature difference between the electrostatic chuck 112 and the lower electrode 111 parameters such as the thermal conductivity of
• the structure of the electrostatic chuck 112 is complex, so it is difficult to accurately estimate these parameters.
• temperature time series data obtained as measured values during temperature rise of the electrostatic chuck 112 and temperature transition data calculated using a physical model are used to calculate heat input and thermal resistance.
• Equation 1 A physical model for estimating the temperature transition of the electrostatic chuck 112 is expressed by Equation 1, for example.
• ⁇ is the density of the electrostatic chuck 112 (g/m 3 )
• c is the specific heat of the electrostatic chuck 112 (J/g ⁇ K)
• A is the cross-sectional area of heat flow (m 2 )
• ⁇ z cer is the static
• the thickness of the electrostatic chuck 112 u represents the temperature (K) of the electrostatic chuck 112, and t represents time (s).
• Q IN represents heat input (W) to the electrostatic chuck 112
• Q OUT represents heat extraction (W) from the electrostatic chuck 112 to the lower electrode 111.
• the heat removal Q OUT can be described using the temperature difference between the lower electrode 111 and the electrostatic chuck 112 and the thermal resistance R th (mK/W) of the adhesive layer 110.
• FIG. 3 is a graph showing changes in temperature of the electrostatic chuck 112 over time.
• the horizontal axis of the graph represents time (s), and the vertical axis represents the temperature (° C.) of the electrostatic chuck 112.
• the solid line temperature increase curve represents the measured value
• the broken line temperature increase curve represents the calculated value using the physical model.
• the actually measured temperature increase curve is, for example, while the electrostatic chuck 112 is heated by the heater 71 and raised from around room temperature to the target temperature (350° C. in the example of FIG. 3). It is obtained by measuring the temperature over time. Instead of heating with the heater 71, plasma may be generated within the plasma processing chamber 10, and the electrostatic chuck 112 may be heated using the generated plasma. While the electrostatic chuck 112 is being heated, not only heat is input from the heater 71 (or plasma) to the electrostatic chuck 112, but also heat is removed from the electrostatic chuck 112 to the lower electrode 111.
• the temperature increase curve based on the physical model is obtained by setting parameters in the physical model to appropriate values and calculating the temperature (u) at each time according to the physical model.
• FIG. 3 shows that there is a discrepancy between the temperature increase curve measured by actual measurement and the temperature increase curve determined by the physical model, and that there is room for improvement in the parameters of the physical model.
• FIGS. 4A and 4B are graphs showing changes in temperature rise curves when parameters are changed.
• the horizontal axis of the graph represents time (s), and the vertical axis represents the temperature (° C.) of the electrostatic chuck 112.
• FIG. 4A shows the variation range of the temperature increase curve when the value of the thermal resistance R th is changed.
• the temperature increase curve obtained from this physical model varies within the range shown by hatching in FIG. 4A.
• the temperature increase rate in the low temperature region for example, less than 200° C.
• the temperature increase rate in a high temperature region changes depending on the value of the thermal resistance R th , and the thermal resistance R th contributes to the time until the temperature u reaches the saturation temperature.
• FIG. 4B shows the variation range of the temperature increase curve when the value of the heat input Q IN is changed.
• the temperature increase curve obtained from this physical model varies within the range shown by hatching in FIG. 4B.
• the time until the temperature u of the electrostatic chuck 112 reaches the saturation temperature is approximately constant.
• the temperature increase rate in a low temperature region (for example, less than 200° C.) changes depending on the value of the heat input Q IN .
• the temperature increase rate in the high temperature region can be changed, and by changing the value of heat input Q IN , the temperature increase rate in the low temperature region can be changed.
• the rate can be changed.
• thermo resistance R th and heat input Q IN thermo resistance
• FIG. 5 is a graph showing the error distribution when the parameters are changed.
• the horizontal axis of the graph represents the thermal conductivity k (W/mmK) of the adhesive layer 110, and the vertical axis represents the heat input Q IN (W) to the electrostatic chuck 112.
• the thermal conductivity k is the reciprocal of the thermal resistance R th .
• the shading of the graph indicates the magnitude of the time-series error between the temperature time-series data obtained as actually measured values and the temperature transition data calculated using the physical model. For example, mean square error (MSE) is used as the time series error.
• MSE mean square error
• n the total number of data.
• FIG. 6 is a graph showing the distribution of errors in the diagonal direction.
• the horizontal axis of the graph represents points on the diagonal line indicated by the white arrow X in FIG. 5, and the vertical axis represents the magnitude of the error. Note that the horizontal axis represents coordinates that have been rescaled so that one end of the diagonal line is 0 and the other end is 100.
• the magnitude of the error on the diagonal is not constant, but at a certain point (in the example of Fig. 6, the thermal conductivity k is 2.3 ⁇ 10 -4 (W/mmK), the heat input Q IN 5600 (W)).
• the values of thermal resistance and heat input that minimize the calculated error when the error between the two is calculated based on temperature time series data obtained as actually measured values and temperature transition data calculated using a physical model. can be uniquely determined.
• the physical model can be optimized by using as parameters the values of thermal resistance and heat input that minimize the error.
• FIG. 7 is a flowchart showing the processing procedure executed by the control unit 1b of the plasma processing system 1.
• the control unit 1b of the plasma processing system 1 raises the temperature of the electrostatic chuck 112 by controlling the operation of the plasma processing apparatus 1a (step S101).
• the control unit 1b can raise the temperature of the electrostatic chuck 112 by activating the heater power supply 70 and heating the electrostatic chuck 112 with the heater 71. Further, the control unit 1b may raise the temperature of the electrostatic chuck 112 by operating the RF power supply unit 30 and the like to generate plasma in the plasma processing chamber 10.
• the temperature of the electrostatic chuck 112 during temperature rise is measured in time series by the temperature sensor 72.
• the processing unit 511 acquires temperature time-series data obtained by time-seriesly measuring the temperature of the electrostatic chuck 112 during temperature rise, for example, through the communication interface 513 (step S102).
• the acquired temperature time series data is stored in the storage unit 512.
• the processing unit 511 calculates the temperature transition of the electrostatic chuck 112 using the physical model shown in Equation 1 (step S103). It is assumed that the physical model and parameters (initial setting values) used in the physical model are stored in the storage unit 512. The processing unit 511 can calculate the temperature transition of the electrostatic chuck 112 by reading the physical model and parameters from the storage unit 512 and performing calculations according to the read physical model and parameters. The calculated temperature transition data is stored in the storage unit 512.
• calculations using a physical model are performed after acquiring temperature time series data through actual measurements, but these steps may be performed in a different order or may be performed concurrently. .
• the processing unit 511 calculates the error between the temperature time series data acquired in step S102 and the temperature transition data calculated in step S103 (step S104). For example, the processing unit 511 calculates the time-series error between the temperature time-series data obtained as an actual measurement value and the temperature transition data calculated using a physical model by calculating the mean square error between the two. Bye.
• the processing unit 511 Based on the calculated error, the processing unit 511 generates a physical model that includes the heat input Q IN to the electrostatic chuck 112 and the thermal resistance R th (or thermal conductivity k) involved in the heat removal Q OUT in the physical model.
• the parameters of are estimated (step S105). Specifically, the processing unit 511 uses the finite difference time domain method (FDTD) to calculate the value of the heat input Q IN and the thermal resistance R th (or thermal conduction What is necessary is to determine the value of the rate k).
• FDTD finite difference time domain method
• the processing unit 511 optimizes the physical model by updating the parameters (step S106).
• the processing unit 511 optimizes the physical model by storing the value of the heat input Q IN and the value of the thermal resistance R th (or thermal conductivity k) determined in step S105 as new parameters in the storage unit 512. can do.
• the procedure is to optimize the physical model according to the calculated error, but if the calculated error is larger than the threshold, the physical model is optimized, and if the calculated error is smaller than the threshold, This may be a procedure that does not involve optimizing the physical model.
• the estimation method of the present disclosure can be realized by preparing actually measured temperature time series data, so automatic estimation is possible during process execution (in other words, no analysis process is required), which improves user productivity. It has the advantage of having no influence.
• the temperature is measured using the temperature sensor 72 built into the electrostatic chuck 112, but if the temperature of the electrostatic chuck 112 can be measured in time series, the installed sensor may be used.
• the number of sensors or types of sensors There is no limit to the number of sensors or types of sensors.
• a plurality of temperature sensors 72 may be built into the electrostatic chuck 112 to measure the in-plane temperature distribution at each time, and each temperature sensor 72 may measure the temperature of the electrostatic chuck 112 over time.
• a physical model is preferably prepared for each temperature sensor 72 and optimized based on temperature time series data obtained from each temperature sensor 72.
• an infrared camera that captures an image accompanying radiant heat emitted from the surface of the electrostatic chuck 112 may be used.
• the infrared camera is installed to face the surface of the electrostatic chuck 112, and outputs images showing the surface temperature distribution of the electrostatic chuck 112 in time series.
• the temperature u included in the physical model is expressed as a function of time and location.
• the processing unit 511 acquires time series data (image data) of the surface temperature distribution from the infrared camera, calculates the surface temperature distribution at each time using a physical model, and calculates the surface temperature distribution at each time using a physical model to minimize the error between the two. All you have to do is estimate the parameters included in the model.
• the configuration uses temperature time series data when the temperature of the electrostatic chuck 112 increases, but it is of course possible to use temperature time series data when the temperature of the electrostatic chuck 112 decreases. .
• FIG. 8 is a flowchart showing the procedure of processing executed by the processing unit 511 in the second embodiment.
• the processing unit 511 executes parameter estimation processing every time a set number of substrates W are processed (step S201).
• the set number of sheets is set in advance. In one example, the set number of sheets is 500 sheets.
• the operating time of the plasma processing apparatus 1a may be used instead of the set number of sheets.
• the processing unit 511 executes parameter estimation processing according to steps S101 to S105 shown in the flowchart of FIG.
• the processing unit 511 stores the estimated parameters (that is, the values of heat input Q IN and thermal resistance R th ) in the storage unit 512 in association with the total number of sheets to be processed through estimation processing (step S202).
• the processing unit 511 determines whether the estimated latest value of the heat input Q IN is less than the first threshold TH1 (step S203).
• the surface temperature distribution of the electrostatic chuck 112 is used as temperature time series data, the in-plane distribution of the heat input Q IN can be monitored, and the uniformity of the plasma density can be determined based on the in-plane distribution of the heat input Q IN . can be evaluated.
• the processing unit 511 adjusts the process conditions.
• a notification prompting the user to change the information is issued (step S204).
• the processing unit 511 transmits a notification prompting a user to change process conditions to a mobile terminal owned by the user through the communication interface 513.
• the processing unit 511 may display information prompting a change in process conditions on a display unit (not shown).
• the processing unit 511 It is determined whether the value of thermal resistance R th exceeds the second threshold value TH2 (step S205).
• the processing unit 511 can evaluate the degree of wear of the adhesive layer 110 by monitoring the value of the thermal resistance R th .
• the processing unit 511 If the estimated latest value of thermal resistance R th is greater than the second threshold TH2 (S205: YES), the electrostatic chuck 112 has deteriorated as the adhesive layer 110 has been consumed by the influence of radicals and heat. Therefore, the processing unit 511 outputs a warning urging replacement of the parts (step S206). For example, the processing unit 511 transmits a warning prompting the user to replace parts via the communication interface 513 to a mobile terminal owned by the user. Alternatively, the processing unit 511 may display a warning prompting replacement of parts on a display unit (not shown).
• parameter estimation processing is executed for each set number of sheets.
• the processing unit 511 can monitor the uniformity of plasma density, and can prompt changes in process conditions before the yield deteriorates. Furthermore, by estimating the thermal resistance R th , it is possible to monitor the degree of wear of the adhesive layer 110, and a warning can be output before the electrostatic chuck 112 reaches the end of its life.
• FIG. 9 is a flowchart showing the procedure of processing executed by the processing unit 511 in the third embodiment.
• the processing unit 511 estimates the values of the heat input Q IN and the thermal resistance R th in a preparatory step before implementing the main step of substrate processing, using the same procedure as in the first embodiment (step S301).
• a dummy wafer is placed on the electrostatic chuck 112, and the temperature of the electrostatic chuck 112 is raised to room temperature or a target temperature while plasma is generated.
• the target temperature is set to the process temperature in this step.
• the processing unit 511 estimates the values of the heat input Q IN and the thermal resistance R th by matching the temperature transition data based on the physical model with the actually measured temperature time series data.
• the processing unit 511 calculates the heater output value until the electrostatic chuck 112 reaches the target temperature from room temperature based on the estimated values of the heat input Q IN and the thermal resistance R th (step S302). This step is preferably performed before the main process of processing the substrate W.
• the processing unit 511 uses a conversion formula or table learned in advance to output the heater output value from room temperature to the target temperature when the values of the heat input Q IN and the thermal resistance R th and the target temperature are given. Then, calculate the heater output value.
• the heater output value does not need to be constant, and may be a value that changes from moment to moment until it reaches the target temperature from room temperature.
• the processing unit 511 drives and controls the heater 71 based on the calculated heater output value (step S303). In this step of substrate processing, the processing unit 511 controls the drive of the heater 71 through the control unit 1b so that the output of the heater power supply 70 becomes the heater output value calculated in step S302.
• the heater 71 can be controlled based on the values of the heat input Q IN and the thermal resistance R th , so that, for example, temperature overshoot at the start of a process can be prevented. It can be prevented.
• Embodiment 4 In Embodiment 4, a configuration will be described in which the in-plane distribution of heat input Q IN is estimated and the amount of gas in the substrate plane is adjusted according to the estimation result.
• FIG. 10 is a flowchart showing the procedure of processing executed by the processing unit 511 in the fourth embodiment.
• the processing unit 511 estimates the values of the heat input Q IN and the thermal resistance R th in a preparatory step before implementing the main step of substrate processing, using the same procedure as in the first embodiment.
• a dummy wafer is placed on the electrostatic chuck 112, and the temperature of the electrostatic chuck 112 is raised to room temperature or a target temperature while plasma is generated.
• the target temperature is set to the process temperature in this step.
• the processing unit 511 estimates the values of the heat input Q IN and the thermal resistance R th by matching the temperature transition data based on the physical model with the actually measured temperature time series data.
• the processing unit 511 estimates the in-plane distribution of the heat input Q IN based on the value of the heat input Q IN of each region (step S401).
• the processing unit 511 adjusts the gas amount in each region based on the estimated in-plane distribution of the heat input Q IN (step S402).
• the processing section 511 controls the operation of the gas supply section 20 through the control section 1b, and adjusts the amount of gas in each region within the substrate surface so that, for example, the plasma density is such that an ideal etching shape is obtained. Adjust.
• the gas amount in each region within the substrate surface is adjusted according to the in-plane distribution of heat input Q IN , the plasma density in each region can be controlled, and the etching shape can be optimized.
• Embodiment 5 In Embodiment 5, a configuration in which the electrostatic chuck 112 includes a convex portion will be described.
• FIG. 11 is a schematic diagram showing the configuration of the electrostatic chuck 112 in the fifth embodiment.
• the schematic diagram of FIG. 11 shows an adhesive layer 110, a lower electrode 111, and a substrate W in addition to the electrostatic chuck 112.
• the configuration and function of adhesive layer 110 and lower electrode 111 are the same as in the first embodiment.
• the electrostatic chuck 112 in the fifth embodiment includes a plurality of convex portions 112a on which the substrate W is placed.
• the substrate W to be processed is placed on the upper surface of the convex portion 112a.
• the convex portion 112a is formed integrally with the main body of the electrostatic chuck 112 from ceramic.
• a heat transfer gas such as He gas is supplied to the gap 112b created when the substrate W is placed on the upper surface of the convex portion 112a.
• the processing unit 511 in the fifth embodiment calculates the value of the heat input Q IN to the substrate W placed on the convex portion 112a and the value of the thermal resistance of the convex portion 112a using the same procedure as in the first embodiment. Estimate. That is, the processing unit 511 can estimate the values of the heat input Q IN and the thermal resistance R th in the process of matching the temperature transition data obtained from the physical model to the temperature time series data obtained as actual measurements.
• a wafer-type temperature sensor may be used as the temperature sensor 72 to measure the temperature of each convex portion 112a.
• the processing unit 511 applies the same procedure as in the second embodiment to compare the value of the thermal resistance R th estimated for each convex portion 112a with a preset value, and based on the comparison result, , wear of each convex portion 112a may be detected. Furthermore, if the processing unit 511 detects wear on the convex portion 112a during the main step of substrate processing or the temperature adjustment step in which plasma is not ignited, the processing section 511 may output a warning prompting replacement of the parts.

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• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Chemical Kinetics & Catalysis (AREA)
• General Chemical & Material Sciences (AREA)
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• Mechanical Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Drying Of Semiconductors (AREA)
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• 2023
  • 2023-07-21 JP JP2024540339A patent/JPWO2024034355A1/ja active Pending
  • 2023-07-21 WO PCT/JP2023/026740 patent/WO2024034355A1/ja not_active Ceased
  • 2023-07-21 KR KR1020257006404A patent/KR20250048721A/ko active Pending
  • 2023-07-21 CN CN202380056929.3A patent/CN119631171A/zh active Pending
  • 2023-07-26 TW TW112128001A patent/TW202425047A/zh unknown
• 2025
  • 2025-02-07 US US19/047,965 patent/US20250183018A1/en active Pending

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