WO2024033738A1 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

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Publication number
WO2024033738A1
WO2024033738A1 PCT/IB2023/057608 IB2023057608W WO2024033738A1 WO 2024033738 A1 WO2024033738 A1 WO 2024033738A1 IB 2023057608 W IB2023057608 W IB 2023057608W WO 2024033738 A1 WO2024033738 A1 WO 2024033738A1
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WIPO (PCT)
Prior art keywords
transistor
layer
insulating layer
electrode
region
Prior art date
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Ceased
Application number
PCT/IB2023/057608
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English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
木村肇
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2024540070A priority Critical patent/JPWO2024033738A1/ja
Priority to CN202380055895.6A priority patent/CN119604914A/zh
Priority to US19/101,617 priority patent/US12619326B2/en
Publication of WO2024033738A1 publication Critical patent/WO2024033738A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • One embodiment of the present invention relates to a display device.
  • one embodiment of the present invention is not limited to the above technical field.
  • the technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, storage devices, lighting devices, input devices (for example, touch sensors, etc.), and input/output devices (for example, antennas, touch panels, etc.). , their driving method, their usage method, or their manufacturing method can be mentioned as an example.
  • a semiconductor device refers to any device that can function by utilizing semiconductor characteristics.
  • a transistor and a semiconductor circuit are one embodiment of a semiconductor device.
  • storage devices, display devices, imaging devices, and electronic devices may include semiconductor devices.
  • Display devices have been applied to various uses. Applications of large display devices include home television devices, digital signage (digital signage), PID (Public Information Display), and the like. Display devices are also often used in smartphones, tablet terminals, and the like.
  • a light-emitting device having a light-emitting device As a display device, a light-emitting device having a light-emitting device (also referred to as a light-emitting element) has been developed.
  • a light emitting device also referred to as an EL device or EL element
  • EL the phenomenon of electroluminescence
  • Patent Document 1 discloses an example of a display device using an organic EL element.
  • An active matrix display device has a gate driver that selects a pixel into which data is to be written, and a source driver that supplies data to the selected pixel. Further, in order to provide a touch panel function to a display device, a touch sensor and a driver for driving the touch sensor are required.
  • IC chips having respective functions can be used.
  • the IC chip is mounted on a frame of a substrate on which a pixel circuit is formed using a technique such as COG (Chip On Glass), COF (Chip On Film), or TCP (Tape Carrier Package).
  • COG Chip On Glass
  • COF Chip On Film
  • TCP Transmission Carrier Package
  • one object of one embodiment of the present invention is to provide a display device including a touch sensor.
  • one of the objects is to provide a display device incorporating a touch sensor and a driver for driving the touch sensor.
  • one of the objects is to provide a display device incorporating a gate driver, a source driver, and a touch sensor driver.
  • one of the purposes is to provide a display device with a new configuration.
  • one of the purposes is to provide a new semiconductor device or the like.
  • One embodiment of the present invention relates to a display device including a touch sensor.
  • One embodiment of the present invention includes a pixel circuit, a light emitting device, a sensor electrode, and a first drive circuit, the first drive circuit having a function of supplying a signal potential to the sensor electrode,
  • the pixel circuit and the first drive circuit are provided on the same substrate, the pixel circuit is provided in the display section, the pixel circuit includes a first transistor, and the first drive circuit includes a second transistor.
  • the light emitting device has a first electrode, a light emitting layer, and a second electrode, the light emitting layer is provided between the first electrode and the second electrode, and the light emitting device has a first electrode, a light emitting layer, and a second electrode.
  • the electrode is electrically connected to one of the source or drain of the first transistor, and the second electrode is electrically connected to the power supply line in a region outside the display section, and the second electrode is electrically connected to one of the source or drain of the first transistor.
  • a sensor electrode is provided, the sensor electrode is electrically connected to the source or drain of the second transistor through the opening, and the second transistor has a channel along the side surface of the second insulating layer provided on the substrate.
  • the display device is a transistor having a formation region.
  • the sensor electrode can be electrically connected to the source or drain of the second transistor via the connection electrode.
  • a conductive layer formed using the same process as the first electrode can be used for the connection electrode.
  • the first transistor may have a channel formation region along the side surface of the second insulating layer.
  • the pixel circuit also has a second drive circuit, the pixel circuit has a third transistor, the second drive circuit has a gate driver function, and the second drive circuit has a fourth transistor.
  • one of the source or drain of the fourth transistor is electrically connected to the gate of the third transistor, and the fourth transistor is a transistor having a channel formation region along a side surface of the second insulating layer. There may be.
  • a transistor having a metal oxide in a channel formation region is preferable to use as the fourth transistor.
  • the pixel circuit also has a third drive circuit, the pixel circuit has a fifth transistor, the third drive circuit has a source driver function, and the third drive circuit has a sixth transistor.
  • one of the source or drain of the sixth transistor is electrically connected to one of the source or drain of the fifth transistor, and the sixth transistor has a channel forming region along a side surface of the second insulating layer.
  • the transistor may have the following characteristics.
  • a transistor having a channel formation region of a metal oxide is preferable to use as the sixth transistor.
  • a camera is provided on the side of the substrate opposite to the surface on which the pixel circuit is provided, and in the display section, the first area that overlaps with the camera lens has a pixel pitch that is higher than the second area that does not overlap with the camera lens. It is also possible to have a configuration with a large value.
  • the sensor electrode can be provided with a metal layer so as to have a region overlapping with a wiring electrically connected to the pixel circuit.
  • the sensor electrode in the first region, is provided with a transparent conductive film, and in the second region, the sensor electrode is provided with a metal layer so as to have a region overlapping with the wiring electrically connected to the pixel circuit.
  • the transparent conductive film may extend to the second region and be electrically connected to the metal layer.
  • the sensor electrode in the second region, may be provided as a metal layer so as to have a region overlapping the wiring electrically connected to the pixel circuit, and in the first region, the sensor electrode may not be provided.
  • a display device including a touch sensor can be provided.
  • a display device including a touch sensor and a driver for driving the touch sensor can be provided.
  • a display device incorporating a gate driver, a source driver, and a touch sensor driver can be provided.
  • a display device or the like with a new configuration can be provided.
  • a new semiconductor device or the like can be provided.
  • FIG. 1 is a diagram illustrating a display device.
  • FIG. 2 is a block diagram illustrating the display device.
  • 3A to 3C are diagrams illustrating a touch sensor.
  • FIGS. 4A to 4F are diagrams illustrating pixel layouts.
  • 5A to 5C are diagrams illustrating a pixel circuit.
  • 6A to 6E are diagrams illustrating configuration examples of a display device.
  • 7A to 7D are diagrams illustrating configuration examples of a display device.
  • 8A and 8B are diagrams illustrating a vertical transistor.
  • 9A and 9B are diagrams illustrating a vertical transistor.
  • FIG. 10A is a diagram illustrating a configuration example of a display device.
  • FIGS. 10B and 10C are diagrams illustrating transistors.
  • FIG. 10A is a diagram illustrating a configuration example of a display device.
  • FIGS. 10B and 10C are diagrams illustrating transistors.
  • FIG. 10A is a diagram illustrating a configuration
  • FIG. 11 is a diagram illustrating a configuration example of a display device.
  • 12A to 12C are diagrams illustrating configuration examples of a display device.
  • 13A and 13B are diagrams illustrating sensor electrodes.
  • 14A and 14B are diagrams illustrating sensor electrodes.
  • 15A and 15B are diagrams illustrating sensor electrodes.
  • 16A and 16B are diagrams illustrating sensor electrodes.
  • FIGS. 17A and 17B are diagrams illustrating a connection form between a sensor electrode and a drive circuit.
  • 18A to 18C are diagrams illustrating sensor electrodes.
  • 19A to 19F are diagrams illustrating configuration examples of electronic equipment.
  • 20A to 20C are diagrams illustrating a configuration example of an electronic device.
  • 21A to 21C are diagrams illustrating configuration examples of electronic equipment.
  • An example of a case where X and Y are electrically connected is an element that enables electrical connection between X and Y (for example, a switch, a transistor, a capacitive element, an inductor, a resistive element, a diode, a display devices, light emitting devices, loads, etc.) can be connected between X and Y.
  • a switch for example, a switch, a transistor, a capacitive element, an inductor, a resistive element, a diode, a display devices, light emitting devices, loads, etc.
  • the on state and off state of the switch are controlled. That is, the switch is in a conductive state (on state) or in a non-conductive state (off state), and has a function of controlling whether or not current flows.
  • An example of a case where X and Y are functionally connected is a circuit that enables functional connection between X and Y (for example, a logic circuit (inverter, NAND circuit, NOR circuit, etc.), signal conversion Circuits (digital-to-analog conversion circuits, analog-to-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boost circuits, step-down circuits, etc.), level shifter circuits that change the signal potential level, etc.), voltage sources, current sources X and Y It is possible to connect one or more between. As an example, even if another circuit is sandwiched between X and Y, if a signal output from X is transmitted to Y, then X and Y are considered to be functionally connected. do.
  • a logic circuit inverter, NAND circuit, NOR circuit, etc.
  • signal conversion Circuits digital-to-analog conversion circuits, analog-to-digital conversion circuits, gam
  • X and Y are electrically connected, it means that or when X and Y are connected directly (i.e., when X and Y are connected without another element or circuit between them). (if applicable).
  • X, Y, the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor are electrically connected to each other, and 1 terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y.
  • the source of the transistor (or the first terminal, etc.) is electrically connected to X
  • the drain of the transistor (or the second terminal, etc.) is electrically connected to Y
  • the source of the transistor or the first terminal, etc.
  • the drain of the transistor or the second terminal, etc.
  • Y are electrically connected in this order.
  • X is electrically connected to Y via the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and terminal, etc.), the drain of the transistor (or the second terminal, etc.), and Y are provided in this connection order.''
  • X and Y are assumed to be objects (eg, devices, elements, circuits, wiring, electrodes, terminals, conductive films, layers, etc.).
  • capacitor element refers to, for example, a circuit element having a capacitance value higher than 0F, a wiring region having a capacitance value higher than 0F, a parasitic capacitance, a transistor, etc. It can be the gate capacitance of Therefore, in this specification, etc., a “capacitive element” refers not only to a circuit element that includes a pair of electrodes and a dielectric material contained between the electrodes, but also to parasitic capacitance that occurs between wirings. , the gate capacitance that occurs between the gate and one of the source or drain of the transistor.
  • capacitor element in “capacitance” can be translated into terms such as “capacitance.” This can be translated into terms such as “gate capacitance”.
  • the term “pair of electrodes” in “capacitance” can be translated into “pair of conductors,” “pair of conductive regions,” “pair of regions,” and the like.
  • the value of the capacitance can be, for example, 0.05 fF or more and 10 pF or less. Further, for example, it may be set to 1 pF or more and 10 ⁇ F or less.
  • a transistor has three terminals called a gate, a source, and a drain.
  • the gate is a control terminal that controls the conduction state of the transistor.
  • the two terminals functioning as the source or drain are the input/output terminals of the transistor.
  • One of the two input/output terminals becomes a source and the other becomes a drain depending on the conductivity type of the transistor (n-channel type, p-channel type) and the level of potential applied to the three terminals of the transistor. Therefore, in this specification and the like, the terms source and drain can be used interchangeably.
  • the transistor when describing the connection relationship of a transistor, "one of the source or the drain” (or the first electrode or the first terminal), “the other of the source or the drain” (or the second electrode, or The notation ⁇ second terminal'' is used.
  • the transistor may have a back gate in addition to the three terminals described above.
  • one of the gate or back gate of the transistor is sometimes referred to as a first gate
  • the other of the gate or back gate of the transistor is sometimes referred to as a second gate.
  • the terms “gate” and “backgate” may be interchangeable.
  • each gate is sometimes referred to as a first gate, a second gate, a third gate, etc. in this specification and the like.
  • a “node” can be translated as a terminal, wiring, electrode, conductive layer, conductor, impurity region, etc., depending on the circuit configuration, device structure, etc. Furthermore, terminals, wiring, etc. can also be referred to as "nodes.”
  • ordinal numbers such as “first,” “second,” and “third” are added to avoid confusion of constituent elements. Therefore, the number of components is not limited. Further, the order of the constituent elements is not limited. For example, a component referred to as “first” in one embodiment such as this specification is a component referred to as “second” in other embodiments, claims, etc. It is possible. Furthermore, for example, a component referred to as “first” in one of the embodiments of this specification etc. may be omitted in other embodiments or claims.
  • electrode B does not need to be formed directly on insulating layer A, and there is no need to form another structure between insulating layer A and electrode B. Do not exclude things that contain elements.
  • electrode B overlapping insulating layer A is not limited to the state in which electrode B is formed on insulating layer A, but also the state in which electrode B is formed under insulating layer A, or A state in which the electrode B is formed on the right side (or left side) of the insulating layer A is not excluded.
  • the terms “adjacent” and “nearby” do not limit that the components are in direct contact with each other.
  • insulating layer A and electrode B do not need to be formed in direct contact with each other, and other components may be placed between insulating layer A and electrode B. Do not exclude what is included.
  • the term “conductive layer” or “conductive film” may be changed to the term “conductor.”
  • the term “conductor” may be changed to the term “conductive layer” or “conductive film.”
  • the term “insulating layer” or “insulating film” may be changed to the term “insulator.”
  • the term “insulator” may be changed to the term “insulating layer” or “insulating film.”
  • Electrode may be used as part of a “wiring” and vice versa.
  • the term “electrode” or “wiring” includes cases where a plurality of “electrodes” or “wirings” are formed integrally.
  • a “terminal” may be used as part of a “wiring” or “electrode,” and vice versa.
  • the term “terminal” also includes cases where a plurality of "electrodes”, “wirings", “terminals”, etc. are formed integrally.
  • an “electrode” can be a part of a “wiring” or a “terminal,” and, for example, a “terminal” can be a part of a “wiring” or a “electrode.”
  • terms such as “electrode,” “wiring,” and “terminal” may be replaced with terms such as "region” depending on the case.
  • terms such as “wiring”, “signal line”, “power line”, etc. can be interchanged with each other depending on the case or the situation. For example, it may be possible to change the term “wiring” to the term “signal line.” Furthermore, for example, it may be possible to change the term “wiring” to a term such as “power line”. The reverse is also true, and terms such as “signal line” and “power line” may sometimes be changed to the term “wiring”. Terms such as “power line” may be changed to terms such as “signal line”. Moreover, the reverse is also true, and a term such as “signal line” may be changed to a term such as “power line”. Further, depending on the case or the situation, the term “potential” applied to the wiring may be changed to a term such as "signal”. Moreover, the reverse is also true, and a term such as “signal” may be changed to the term “potential”.
  • parallel refers to a state in which two straight lines are arranged at an angle of -10° or more and 10° or less. Therefore, the case where the angle is greater than or equal to -5° and less than or equal to 5° is also included.
  • substantially parallel or “substantially parallel” refers to a state in which two straight lines are arranged at an angle of -30° or more and 30° or less.
  • perpendicular refers to a state in which two straight lines are arranged at an angle of 80° or more and 100° or less. Therefore, the case where the angle is 85° or more and 95° or less is also included.
  • substantially perpendicular or “substantially perpendicular” refers to a state in which two straight lines are arranged at an angle of 60° or more and 120° or less.
  • arrows indicating the X direction, Y direction, and Z direction may be attached.
  • the "X direction” refers to the direction along the X axis, and the forward direction and reverse direction may not be distinguished unless explicitly stated.
  • the X direction, the Y direction, and the Z direction are directions that intersect with each other. More specifically, the X direction, the Y direction, and the Z direction are directions that are orthogonal to each other.
  • one of the X direction, the Y direction, or the Z direction may be referred to as a "first direction” or a “first direction.” Further, the other direction may be referred to as a “second direction” or “second direction”. Further, the remaining one may be referred to as a "third direction” or "third direction.”
  • a substrate constituting a display device is attached with a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package), or a substrate constituting a display device is attached with a connector such as a COG (Chip On Glass).
  • a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package)
  • a substrate constituting a display device is attached with a connector such as a COG (Chip On Glass).
  • COG Chip On Glass
  • One embodiment of the present invention is a display device having a touch panel function.
  • the electrode of the touch sensor is provided so as to overlap the display section, and the electrode is electrically connected to a first drive circuit monolithically formed on a substrate on which a pixel circuit is formed.
  • An in-cell touch panel in which a touch sensor is built into a display device can reduce the number of parts, thereby reducing costs.
  • a transistor including a metal oxide in a semiconductor layer can be used for the pixel circuit and the first driver circuit. Furthermore, the transistor included in the first drive circuit has a structure that allows for easy miniaturization and high-speed operation. Therefore, the area occupied by the circuit can be reduced, contributing to narrowing of the frame.
  • a second drive circuit (gate driver) and a third drive circuit (source driver) that drive the pixel circuit can also be formed using transistors having a metal oxide in the semiconductor layer, and the three drive circuits can be connected to the pixel circuit. It can be formed monolithically on a substrate on which a circuit is formed.
  • the cost for mounting an IC chip can be reduced, and the frame of the display device can be made narrower.
  • FIG. 1 is a schematic diagram for explaining a display device of one embodiment of the present invention.
  • a display device according to one embodiment of the present invention includes, between a pair of substrates, a pixel and a conductive layer that constitutes an electrode of a touch sensor (hereinafter referred to as a sensor electrode).
  • a display device according to one embodiment of the present invention includes a plurality of sensor electrodes overlapping a display portion. In addition, in FIG. 1, a part of the sensor electrode is cut away.
  • the display device 100 has a configuration in which a sensor electrode 130 is provided between a substrate 110 and a substrate 140.
  • a display section 111 is provided on the substrate 110, and a sensor electrode 130 is provided on the display section 111.
  • the pixel 120 forming the display section 111 has a plurality of sub-pixels 122, as shown in the enlarged view. Full-color display is possible by using a plurality of subpixels 122 that emit light of different colors.
  • a drive circuit 114 (sensor driver) for driving the touch sensor is provided on the substrate 110.
  • Drive circuit 114 is electrically connected to sensor electrode 130 and FPC 119. Further, the sensor electrode 130 is also electrically connected to the FPC 119.
  • a drive circuit 112 and a drive circuit 113 for driving a pixel circuit included in the pixel 120 are provided on the substrate 110.
  • the drive circuit 112 and the drive circuit 113 are electrically connected to the FPC 118.
  • the FPC 118 and the FPC 119 may be combined into one.
  • the drive circuits 112, 113, and 114 are provided in a monolithic manner, one or more of them may be replaced with a form in which an IC chip is mounted. Furthermore, depending on the type of touch sensor to be provided, the drive circuit 114 may be unnecessary.
  • FIG. 2 is a block diagram illustrating the display device 100.
  • the display device 100 includes a pixel array 121 provided in a display section 111, a drive circuit 112, a drive circuit 113, and a drive circuit 114.
  • Pixel array 121 has pixels 120 arranged in column and row directions.
  • Pixel 120 has subpixel 122.
  • the subpixel 122 has a function of emitting light for display.
  • Subpixel 122 has a light emitting device that emits visible light.
  • an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • the light-emitting substances included in the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) material). ), inorganic compounds (such as quantum dot materials), etc.
  • an LED such as a micro LED (Light Emitting Diode) can also be used.
  • the drive circuit 112 and the drive circuit 113 are drivers for driving the pixels 120.
  • the drive circuit 114 is a driver for driving the touch sensor.
  • a shift register circuit that operates at high speed can be used for the drive circuit 112, the drive circuit 113, and the drive circuit 114.
  • the drive circuit 112 can function as a gate driver, and the drive circuit 113 can function as a source driver.
  • the drive circuit 112 is electrically connected to the subpixel 122 via the gate line GL.
  • the drive circuit 113 is electrically connected to the subpixel 122 via the source line SL.
  • An FPC 118 is electrically connected to the drive circuit 112 and the drive circuit 113, and a signal potential can be input from the outside via the FPC 118. Note that a demultiplexer may be provided between the drive circuit 112 and the subpixel 122.
  • the sensor electrode 130X has a configuration in which a plurality of conductive layers shown in a rectangular shape are connected in the X direction.
  • the sensor electrode 130Y has a configuration in which a plurality of conductive layers shown in a rectangular shape are connected in the Y direction.
  • the sizes of the sensor electrodes 130X and 130Y are merely examples, and are not limited to the illustrated sizes.
  • the sizes of the sensor electrodes 130X and 130Y may be set according to the specifications of the product.
  • one of the conductive layers shown in a rectangular shape can be arranged so as to have a region overlapping with one or more and 100,000 or less pixels.
  • a sensor electrode 130X can be electrically connected to the drive circuit 114.
  • the drive circuit 114 is connected to the FPC 119, and can input a signal potential from the outside to the sensor electrode 130X via the FPC 119.
  • the sensor electrode 130Y can be connected to the FPC 119, and the current flowing through the sensor electrode 130Y can be read out via the FPC 119.
  • FIG. 3A is a top view illustrating a portion of the touch sensor.
  • the touch sensor includes a conductive layer 131X (131X1-131X3) that functions as a sensor electrode 130X provided in the X direction, and a conductive layer 131Y (131Y1-131Y3) that functions as a sensor electrode 130Y provided in the Y direction.
  • FIG. 3A illustrates a configuration in which the conductive layer 131X and the conductive layer 131Y are arranged in a regular manner in square conductive layers
  • the present invention is not limited to this.
  • the outer shape of the conductive layer may be circular, triangular, pentagonal, hexagonal, octagonal, or the like.
  • the conductive layer 131X and the conductive layer 131Y can function as electrodes of a capacitive touch sensor.
  • the capacitance method includes a surface capacitance method, a projected capacitance method, and the like.
  • the projected capacitance method mainly includes a self-capacitance method, a mutual capacitance method, etc., depending on the driving method. It is preferable to use the mutual capacitance method because simultaneous multi-point detection is possible.
  • a pulse voltage is applied to each of the conductive layer 131X and the conductive layer 131Y in a scanning manner, and the value of the current flowing through itself at that time is detected.
  • the magnitude of the current changes, and by detecting this difference, the position information of the object to be detected can be acquired.
  • a pulse voltage is applied in a scanning manner to either the conductive layer 131X or the conductive layer 131Y, and by detecting the current flowing to the other, positional information of the object to be detected is obtained. get.
  • the drive circuit 114 is connected to the conductive layer 131X, and the current flowing through the conductive layer 131Y is detected. Note that if the projected self-capacitance method is used, the drive circuit 114 can be omitted.
  • An insulating layer is sandwiched between each intersection of the conductive layer 131X and the conductive layer 131Y, so that no short circuit occurs.
  • the insulating layer may be provided only at the intersection, or may be provided so as to cover the conductive layer 131X.
  • a conductive layer 132 that electrically connects adjacent rectangular conductive layers may be provided at the intersection.
  • a light-transmitting conductive material for the conductive layer 131X and the conductive layer 131Y.
  • the light-transmitting conductive material conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide added with gallium can be used.
  • a film containing graphene can also be used.
  • a film containing graphene can be formed, for example, by reducing a film containing graphene oxide. Examples of the reduction method include a method of applying heat.
  • a metal or alloy thin enough to have translucency can be used.
  • metals such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or alloys containing these metals can be used.
  • a nitride eg, titanium nitride
  • a laminated film in which two or more of the conductive films containing the above-mentioned materials are laminated may be used.
  • the conductive layer 131X and the conductive layer 131Y may be made of a conductive film processed to be thin enough to be invisible to the user. For example, by processing such a conductive film into a grid shape (mesh shape), high conductivity and high visibility of the display device can be obtained.
  • the conductive film preferably has a portion having a width of 30 nm or more and 100 ⁇ m or less, preferably 50 nm or more and 50 ⁇ m or less, and more preferably 50 nm or more and 20 ⁇ m or less.
  • a conductive film having a pattern width of 10 ⁇ m or less is preferable because it is extremely difficult for the user to visually recognize the conductive film.
  • FIG. 3C an example in which a lattice-shaped conductive film is used for the conductive layer 131X is shown in an enlarged view in FIG. 3C.
  • the transmittance of light emitted by the light emitting device can be increased by arranging the conductive film so as not to overlap the light emitting device.
  • conductive nanowires may be used for the conductive layer 131X and the conductive layer 131Y.
  • a two-dimensional network is formed, which can function as a highly transparent conductive film.
  • nanowires having an average diameter of 1 nm or more and 100 nm or less, preferably 5 nm or more and 50 nm or less, and more preferably 5 nm or more and 25 nm or less can be used.
  • metal nanowires such as Ag nanowires, Cu nanowires, and Al nanowires, or carbon nanotubes can be used.
  • a light transmittance of 89% or more and a sheet resistance value of 40 ⁇ / ⁇ or more and 100 ⁇ / ⁇ or less can be achieved.
  • 4A to 4F are diagrams illustrating the pixel layout.
  • the arrangement of subpixels There are no particular limitations on the arrangement of subpixels, and various methods can be applied.
  • Examples of the sub-pixel arrangement include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.
  • top shape of the sub-pixel examples include polygons such as triangles, quadrilaterals (including rectangles and squares), and pentagons, shapes with rounded corners of these polygons, ellipses, and circles.
  • the top surface shape of the subpixel corresponds to the top surface shape of the light emitting region of the light emitting device.
  • the S stripe arrangement is applied to the pixel 120 shown in FIG. 4A.
  • the pixel 120 shown in FIG. 4A is composed of three sub-pixels 122, sub-pixels 122a, 122b, and 122c.
  • the subpixel 122a can be a blue subpixel
  • the subpixel 122b can be a red subpixel
  • the subpixel 122c can be a green subpixel.
  • the pixel 120 shown in FIG. 4B includes a subpixel 122a having a top surface shape of a substantially trapezoid or a substantially triangular shape with rounded corners, a subpixel 122b having a top surface shape of a substantially trapezoidal or substantially triangular shape having rounded corners, and a subpixel 122b having a top surface shape of a substantially trapezoidal or substantially triangular shape with rounded corners. and a sub-pixel 122c having a substantially hexagonal top surface shape.
  • the subpixel 122a has a larger light emitting area than the subpixel 122b. In this way, the shape and size of each subpixel can be determined independently. For example, a subpixel having a more reliable light emitting device can be made smaller in size.
  • the subpixel 122a can be a green subpixel
  • the subpixel 122b can be a red subpixel
  • the subpixel 122c can be a blue subpixel.
  • FIG. 4C shows an example in which a pixel 120a having a subpixel 122a and a subpixel 122b and a pixel 120b having a subpixel 122b and a subpixel 122c are arranged alternately.
  • the subpixel 122a can be a red subpixel
  • the subpixel 122b can be a green subpixel
  • the subpixel 122c can be a blue subpixel.
  • FIG. 4D is an example in which each subpixel has a substantially rectangular upper surface shape with rounded corners
  • FIG. 4E is an example in which each subpixel has a circular upper surface shape.
  • the pixel 120a has two subpixels (subpixels 122a, 122b) in the upper row (first row), and one subpixel (subpixel 122c) in the lower row (second row).
  • the pixel 120b has one subpixel (subpixel 122c) in the top row (first row), and two subpixels (subpixels 122a and 122b) in the bottom row (second row).
  • the subpixel 122a can be a red subpixel
  • the subpixel 122b can be a green subpixel
  • the subpixel 122c can be a blue subpixel.
  • FIG. 4F is an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels arranged in the column direction (for example, subpixel 122a and subpixel 122b, or subpixel 122b and subpixel 122c) are shifted.
  • the subpixel 122a can be a red subpixel
  • the subpixel 122b can be a green subpixel
  • the subpixel 122c can be a blue subpixel.
  • the top surface shape of a subpixel may be a polygon with rounded corners, an ellipse, or a circle.
  • FIG. 5A shows an example of a pixel circuit that can be applied to the subpixel 122.
  • the pixel circuit includes a transistor M1, a transistor M2, a transistor M3, a capacitor C1, and a light emitting device EL. Furthermore, a gate line GL and a source line SL are electrically connected to the pixel circuit (see FIG. 2).
  • the transistor M1 has a gate electrically connected to the gate line GL, one of the source or drain electrically connected to the source line SL, and the other electrically connected to one electrode of the capacitor C1 and the gate of the transistor M2. be done.
  • one of the source and the drain is electrically connected to the wiring AL, and the other of the source and the drain is electrically connected to one electrode of the light emitting device EL, the other electrode of the capacitor C1, and one of the source and the drain of the transistor M3. connected.
  • the gate of the transistor M3 is electrically connected to the gate line GL, and the other of the source and drain is electrically connected to the wiring RL.
  • the other electrode of the light emitting device EL is electrically connected to the wiring CL.
  • Data potential D is applied to source line SL.
  • a selection signal is applied to the gate line GL.
  • the selection signal includes a potential that makes the transistor conductive and a potential that makes the transistor non-conductive.
  • a reset potential is applied to the wiring RL.
  • An anode potential is applied to the wiring AL.
  • a cathode potential is applied to the wiring CL.
  • the anode potential is higher than the cathode potential.
  • the reset potential applied to the wiring RL can be set to such a potential that the potential difference between the reset potential and the cathode potential is smaller than the threshold voltage of the light emitting device EL.
  • the reset potential can be higher than the cathode potential, the same potential as the cathode potential, or lower than the cathode potential.
  • Transistor M1 and transistor M3 function as a switch.
  • Transistor M2 functions as a transistor for controlling the current flowing through the light emitting device EL.
  • the transistor M1 functions as a selection transistor
  • the transistor M2 functions as a drive transistor.
  • transistors having a metal oxide in a channel formation region can be used as the transistors M1 to M3.
  • transistors (hereinafter referred to as Si transistors) having silicon (monocrystalline silicon, polycrystalline silicon, microcrystalline silicon, or amorphous silicon) in a channel formation region can be used for all of the transistors M1 to M3.
  • an OS transistor may be used as the transistor M1 and the transistor M3, and a Si transistor may be used as the transistor M2.
  • one or more Si transistors may be used, and the other transistors may be OS transistors.
  • one or more of the drive circuits 112, 113, and 114 may be configured with Si transistors, and the others may be configured with OS transistors.
  • the OS transistor a transistor in which an oxide semiconductor is used in a semiconductor layer in which a channel is formed can be used.
  • the semiconductor layer may include, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, One or more selected from hafnium, tantalum, tungsten, and magnesium) and zinc.
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium, gallium, and zinc also referred to as IGZO
  • a transistor using an oxide semiconductor which has a wider bandgap and lower carrier concentration than silicon, can achieve extremely low off-state current. Therefore, due to the small off-state current, it is possible to retain the charge accumulated in the capacitor connected in series with the transistor for a long period of time. Therefore, it is particularly preferable to use transistors to which an oxide semiconductor is applied for the transistor M1 and the transistor M3 that are connected in series with the capacitor C1.
  • transistors including oxide semiconductors as the transistor M1 and the transistor M3
  • the charge held in the capacitor C1 can be prevented from leaking through the transistor M1 or the transistor M3. Furthermore, since the charge held in the capacitor C1 can be held for a long time, it is possible to display still images for a long time without rewriting pixel data.
  • transistor is shown as an n-channel transistor in FIG. 5A, a p-channel transistor can also be used.
  • transistor included in the pixel circuit a transistor having a pair of gates overlapping each other with a semiconductor layer interposed therebetween can be used.
  • a configuration in which the pair of gates are electrically connected to each other and given the same potential has the advantage of increasing the on-current of the transistor and improving saturation characteristics.
  • a potential for controlling the threshold voltage of the transistor may be applied to one of the pair of gates.
  • the stability of the electrical characteristics of the transistor can be improved.
  • one gate of the transistor may be electrically connected to a wiring to which a constant potential is applied, or may be electrically connected to its own source or drain.
  • the pixel circuit shown in FIG. 5B is an example in which transistors each having a pair of gates are used as the transistor M1 and the transistor M3. A pair of gates of each of the transistor M1 and the transistor M3 are electrically connected. With such a configuration, the period for writing data to the pixel circuit can be shortened.
  • the pixel circuit shown in FIG. 5C is an example in which a transistor having a pair of gates is applied to the transistor M2 in addition to the transistor M1 and the transistor M3. A pair of gates of the transistor M2 are electrically connected.
  • One embodiment of the present invention is a display device including a light-emitting device.
  • a full-color display device can be realized by including three types of light emitting devices that emit red (R), green (G), or blue (B) light in each pixel.
  • R red
  • G green
  • B blue
  • an element such as a light emitting layer sandwiched between a pair of electrodes included in a light emitting device will be referred to as an EL layer.
  • a device manufactured using a metal mask or an FMM fine metal mask, high-definition metal mask
  • a device with an MM (metal mask) structure is sometimes referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure. Since a display device having a device with an MML structure is manufactured without using a metal mask, it has a higher degree of freedom in designing pixel arrangement, pixel shape, etc. than a display device having a device with an FMM or MM structure.
  • the island-shaped organic layer (hereinafter referred to as EL layer) constituting the organic EL element is not formed by a pattern of a metal mask, but by forming the EL layer over one surface. It is formed by processing after Therefore, it is possible to realize a high-definition display device or a display device with a high aperture ratio, which has been difficult to realize up to now. Furthermore, since the EL layer can be made separately for each color, it is possible to realize a display device that is extremely vivid, has high contrast, and has high display quality. Further, by providing a sacrificial layer over the EL layer, damage to the EL layer during the manufacturing process of a display device can be reduced, and the reliability of the light emitting device can be improved.
  • the distance between two adjacent EL layers is difficult to reduce the distance between two adjacent EL layers to less than 10 ⁇ m using a formation method using a metal mask, but according to the above method, it is possible to reduce the distance to 3 ⁇ m or less, 2 ⁇ m or less, or 1 ⁇ m or less.
  • the distance can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less.
  • the aperture ratio can be brought close to 100%.
  • the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, but less than 100%.
  • the size of the EL layer itself can be made much smaller than when a metal mask is used.
  • a metal mask is used to create separate EL layers
  • an island-shaped EL layer is formed by processing a film formed to a uniform thickness (deleted), so the thickness can be made uniform, and the size of the EL layer is fine (deleted). Even if there is, almost the entire area can be used as a light emitting region. Therefore, according to the above manufacturing method, it is possible to have both high definition and high aperture ratio.
  • the EL layer since the EL layer is processed without using FMM, it has distinct aspects.
  • the EL layer preferably has a portion with a taper angle of 30 degrees or more and less than 90 degrees, preferably 60 degrees or more and less than 90 degrees.
  • the term “the end of the object has a tapered shape” means that the angle between the side surface (surface) and the formed surface (bottom surface) in the end region is greater than 0 degrees and less than 90 degrees. , and has a cross-sectional shape in which the thickness continuously increases from the end. Further, the taper angle refers to the angle formed between the bottom surface (formed surface) and the side surface (surface) at the end of the object.
  • FIG. 6A shows a schematic top view of the display device 100.
  • the display device 100 includes a plurality of light-emitting devices 90R that exhibit red, a plurality of light-emitting devices 90G that exhibit green, and a plurality of light-emitting devices 90B that exhibit blue.
  • a sensor electrode 130X or a sensor electrode 130Y which is an electrode of a touch sensor, is provided on these light emitting devices.
  • the light emitting devices 90R, 90G, and 90B are each arranged in a matrix.
  • the arrangement method of the light emitting devices is not limited to this, and arrangement methods such as a stripe arrangement, an S-stripe arrangement, a delta arrangement, a Bayer arrangement, and a zigzag arrangement may be applied, and a pentile arrangement, a diamond arrangement, etc. may also be used. can.
  • FIG. 6A shows a connection electrode 311a that is electrically connected to the common electrode 313.
  • the connection electrode 311a is given a potential (for example, an anode potential or a cathode potential) to be supplied to the common electrode 313. That is, the connection electrode 311a can also be said to be a part of the power supply line.
  • the connection electrode 311a is provided outside the display section where the light emitting devices 90R and the like are arranged, and is electrically connected to the common electrode 313 through the connection section 330a.
  • connection electrode 311a can be provided along the outer periphery of the display section. For example, it may be provided along one side of the outer periphery of the display section, or may be provided over two or more sides of the outer periphery of the display area. That is, when the top surface shape of the display area is a rectangle, the top surface shape of the connection electrode 311a can be a band shape, an L shape, a U shape (square bracket shape), a square shape, or the like.
  • FIG. 6A shows a connection electrode 311b that is electrically connected to the sensor electrode 130X.
  • the connection electrode 311b is electrically connected to a transistor included in the drive circuit 114.
  • the connection portion 330b between the sensor electrode 130X and the connection electrode 311b is provided outside the connection portion 330a between the common electrode 313 and the connection electrode 311a (on the opposite side from the display portion).
  • this transistor has a function of inputting a pulse voltage to the connection electrode 311b. That is, the connection electrode 311b is electrically connected to the source or drain of the transistor.
  • FIG. 6A shows an example in which the conductive layer constituting the sensor electrode 130X extends to the connection part 330b with the connection electrode 311b, the conductive layer and the low-resistance metal layer are electrically connected, The metal layer and the connection electrode 311b may be electrically connected.
  • FIG. 6B is a schematic cross-sectional view corresponding to dashed-dotted lines A1-A2, B1-B2, and dashed-dotted line C1-C2 shown in FIG. 6A.
  • FIG. 6B shows a schematic cross-sectional view of the light emitting device 90G, the light emitting device 90B, the connection electrode 311a, and the connection electrode 311b provided on the insulating layer 301.
  • the light emitting device 90R not shown in the cross-sectional schematic diagram can have the same configuration as the light emitting device 90G or the light emitting device 90B.
  • the light emitting device 90G has a pixel electrode 311, an organic layer 312G, and a common electrode 313.
  • Light emitting device 90B has pixel electrode 311, organic layer 312B, and common electrode 313.
  • the common electrode 313 is provided in common to the light emitting device 90G and the light emitting device 90B. Between each light emitting device, the pixel electrodes 311 are provided apart from each other.
  • the organic layer 312G includes a luminescent organic compound having at least a peak wavelength in a green wavelength range.
  • the organic layer 312B includes a luminescent organic compound having at least a peak wavelength in a blue wavelength range.
  • the organic layer 312G and the organic layer 312B can also each be called an EL layer.
  • the organic layer 312G and the organic layer 312B may each have one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the uppermost layer that is, the layer in contact with the common electrode 313, is preferably a layer other than the light emitting layer.
  • the layer and the common electrode 313 are in contact with each other.
  • a pixel electrode 311 is provided for each light emitting device. Further, the common electrode 313 is provided as a continuous layer common to each light emitting device. A conductive film that is transparent to visible light is used for either the pixel electrode 311 or the common electrode 313, and a conductive film that is reflective is used for the other. By making each pixel electrode translucent and the common electrode 313 reflective, a bottom emission type display device can be obtained.On the other hand, each pixel electrode is reflective and the common electrode 313 is transparent. By making it optical, a top emission type (top emission type) display device can be obtained. Note that by making both each pixel electrode and the common electrode 313 transparent, a double-emission type (dual emission type) display device can be obtained.
  • An insulating layer 340 is provided to cover the end of the pixel electrode 311.
  • the ends of the insulating layer 340 have a tapered shape.
  • the term "the end of the object has a tapered shape” means that the angle formed between the surface and the surface to be formed in the region of the end is greater than 0 degrees and less than 90 degrees, and It means to have a cross-sectional shape in which the thickness increases continuously.
  • the surface thereof can be made into a gently curved surface. Therefore, the coverage of the film formed on the insulating layer 340 can be improved.
  • Examples of materials that can be used for the insulating layer 340 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins. It will be done.
  • an inorganic insulating material may be used as the insulating layer 340.
  • an oxide or a nitride such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, or hafnium oxide is used. be able to.
  • yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, and the like may be used.
  • the organic layer 312G and the organic layer 312B are provided so as not to touch each other. This can suitably prevent a current from flowing through two adjacent organic layers and causing unintended light emission. Therefore, contrast can be increased and a display device with high display quality can be realized.
  • the end portions of the organic layer 312G and the organic layer 312B have a taper angle of 30 degrees or more.
  • the angle between the side surface (surface) and the bottom surface (formed surface) at each end is 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees.
  • the temperature is at least 120 degrees.
  • the organic layer 312G and the organic layer 312B each have a taper angle of 90 degrees or its vicinity (for example, 80 degrees or more and 100 degrees or less).
  • a protective layer 321 is provided on the common electrode 313.
  • the protective layer 321 has a function of preventing impurities such as water from diffusing into each light emitting device from above.
  • the protective layer 321 can have, for example, a single layer structure or a multilayer structure including at least an inorganic insulating film.
  • the inorganic insulating film include oxide films or nitride films such as a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, a silicon nitride film, an aluminum oxide film, an aluminum oxynitride film, and a hafnium oxide film.
  • a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 321.
  • the protective layer 321 a laminated film of an inorganic insulating film and an organic insulating film can also be used.
  • the organic insulating film functions as a planarization film.
  • the upper surface of the organic insulating film can be made flat, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier properties can be improved.
  • a structure for example, an antenna, an electrode of a touch sensor, a color filter, or a lens array
  • FIG. 6B shows an example in which an insulating layer 322 that functions as a planarization film is provided on the protective layer 321, and sensor electrodes 130X and 130Y that function as electrodes of a touch sensor are provided on the insulating layer 322.
  • the insulating layer 322 may function as a solid sealing layer to improve the reliability of the light-emitting device.
  • the layer corresponding to the insulating layer 322 is not limited to one layer, and may be formed of a plurality of layers.
  • FIG. 6B shows an example in which the sensor electrodes 130X and 130Y are provided with a transparent conductive film.
  • the sensor electrodes 130X and 130Y are provided using a grid-like metal conductive film or the like, it is preferable to provide them at positions that do not overlap with the light emitting devices 90G and 90B, or at positions where the overlapping area is reduced, as shown in FIG. 6C.
  • connection portion 330a a common electrode 313 is provided on and in contact with the connection electrode 311a, and a protective layer 321 is provided to cover the common electrode 313. Further, an insulating layer 340 is provided to cover the end of the connection electrode 311a.
  • connection electrode 311b and the sensor electrode 130X are electrically connected through openings provided in the insulating layer 322 and the protective layer 321.
  • the sensor electrode 130X may use a material with relatively high resistance, it is preferable to provide the metal layer 315 between the sensor electrode 130X and the connection electrode 311b. By providing the metal layer 315, the contact resistance between the sensor electrode 130X and the connection electrode 311b can be reduced.
  • a configuration may be adopted in which the sensor electrode 130 and the connection electrode 311b are in direct contact, as shown in FIG. 6D. Furthermore, as shown in FIG. 6E, a configuration may be adopted in which the insulating layer 322 is not provided near the connection portion 330b.
  • FIG. 6B a configuration example of a display device that differs in part from FIG. 6B will be described. Specifically, an example will be shown in which the insulating layer 340 is not provided.
  • FIG. 7A shows an example in which the side surface of the pixel electrode 311 and the side surface of the organic layer 312G or 312B approximately match.
  • an insulating layer 325 is provided in contact with the side surfaces of the organic layer 312G, the organic layer 312B, and the pixel electrode 311.
  • the insulating layer 325 can effectively suppress an electrical short between the pixel electrode 311 and the common electrode 313 and leakage current between them.
  • the insulating layer 325 can be an insulating layer containing an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film can be used, for example.
  • the insulating layer 325 may have a single layer structure or a laminated structure.
  • oxide insulating films include silicon oxide film, aluminum oxide film, magnesium oxide film, indium gallium zinc oxide film, gallium oxide film, germanium oxide film, yttrium oxide film, zirconium oxide film, lanthanum oxide film, neodymium oxide film, and oxide film.
  • Examples include hafnium film and tantalum oxide film.
  • Examples of the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • Examples of the oxynitride insulating film include a silicon oxynitride film, an aluminum oxynitride film, and the like.
  • Examples of the nitride oxide insulating film include a silicon nitride oxide film, an aluminum nitride oxide film, and the like.
  • the insulating layer 325 has fewer pinholes and has an excellent function of protecting the organic layer. can be formed.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitrided oxide refers to a material whose composition contains more nitrogen than oxygen.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. shows.
  • the insulating layer 325 can be formed using a sputtering method, a CVD method, a PLD method, an ALD method, or the like.
  • the insulating layer 325 is preferably formed using an ALD method that provides good coverage.
  • a resin layer 326 is provided between two adjacent light emitting devices so as to fill a gap between two opposing pixel electrodes and a gap between two opposing organic layers. Since the resin layer 326 can flatten the surface on which the common electrode 313 and the like are formed, it is possible to prevent the common electrode 313 from being disconnected due to poor coverage of steps between adjacent light emitting devices.
  • an insulating layer containing an organic material can be suitably used.
  • acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. are used. can do.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • a photosensitive resin can be used as the resin layer 326.
  • a photoresist may be used as the photosensitive resin.
  • a positive type material or a negative type material can be used.
  • the resin layer 326 it is preferable to use a material that absorbs visible light as the resin layer 326. If a material that absorbs visible light is used for the resin layer 326, the resin layer 326 can absorb light emitted from the EL layer, block stray light from adjacent pixels, and suppress color mixture. Therefore, a display device with high display quality can be provided.
  • the insulating layer 325 is provided between the resin layer 326 and the organic layer 312G, etc., it is possible to prevent impurities such as moisture contained in the resin layer 326 from diffusing into the organic layer 312G, etc., thereby increasing reliability. It is possible to obtain a display device with high performance.
  • a reflective film for example, a metal film containing one or more selected from silver, palladium, copper, titanium, aluminum, etc.
  • a mechanism may be provided to improve the light extraction efficiency by reflecting the emitted light with the reflective film.
  • FIG. 7B shows an example in which the width of the pixel electrode 311 is larger than the width of the organic layer 312G or the organic layer 312B.
  • the organic layer 312G and the like are provided inside the end of the pixel electrode 311.
  • the insulating layer 325 is provided to cover the side surface of the organic layer included in the light emitting device and a portion of the upper surface and side surface of the pixel electrode 311.
  • the resin layer 326 is located between two adjacent light emitting devices and is provided in contact with the insulating layer 325.
  • FIG. 7C shows an example in which the width of the pixel electrode 311 is smaller than the width of the organic layer 312G or the organic layer 312B.
  • the organic layer 312G and the like extend outward beyond the end of the pixel electrode 311.
  • the insulating layer 325 is provided in contact with the side surfaces of the organic layers of two adjacent light emitting devices. Note that the insulating layer 325 may be provided covering not only the side surfaces of the organic layer 312G, etc., but also a part of the top surface.
  • the resin layer 326 is located between two adjacent light emitting devices and is provided in contact with the insulating layer 325.
  • the upper surface of the resin layer 326 is preferably flat, but depending on the uneven shape of the surface on which the resin layer 326 is formed, the conditions for forming the resin layer 326, etc., the surface of the resin layer 326 may have a concave or convex shape. be.
  • FIG. 7D is an enlarged cross-sectional view showing an example of a case where the surface of the resin layer 326 has an uneven shape in the configuration of FIG. 7C.
  • the ends of the pixel electrode 311G and the pixel electrode 311B have a tapered shape. Further, an organic layer 312G is formed to cover the end of the pixel electrode 311G, and an organic layer 312B is formed to cover the end of the pixel electrode 311B. Further, the insulating layer 301 has a recess between the pixel electrode 311G and the pixel electrode 311B. The recessed portion is formed when processing the pixel electrode 311G and the pixel electrode 311B.
  • an insulating layer 325 is provided to cover the ends of the organic layer 312G and the organic layer 312B, and a protective layer 327G is provided in a region between the organic layer 312G and the insulating layer 325. Further, a protective layer 327B is provided in a region between the organic layer 312B and the insulating layer 325.
  • the protective layer 327G and the protective layer 327B function as masks (also referred to as hard masks) when processing the organic layer 312G and the organic layer 312B, respectively.
  • the organic layer 312G and the organic layer 312B are inorganic films, more specifically, inorganic conductive films (typically tungsten), or inorganic insulating films (typically silicon oxide, silicon nitride, or aluminum oxide). ) can be used.
  • inorganic conductive films typically tungsten
  • inorganic insulating films typically silicon oxide, silicon nitride, or aluminum oxide.
  • a recess is formed in the insulating layer 301 located in a region between the organic layer 312G and the organic layer 312B.
  • the recessed portion is formed when processing the organic layer 312G and the organic layer 312B.
  • the common electrode 313 and the protective layer 321 are provided so as to cover the organic layer 312G, the organic layer 312B, the protective layer 327G, the protective layer 327B, the insulating layer 325, and the resin layer 326.
  • FIGS. 6A to 6E and 7A to 7D are examples, and other structures can be used in one embodiment of the present invention.
  • This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.
  • Embodiment 2 In this embodiment, a vertical transistor that can be used in the driver circuits 112, 113, and 114 and the pixel 120 shown in Embodiment 1 will be described. Vertical transistors have a structure that allows for easy miniaturization and high-speed operation.
  • FIGS. 8A and 8B are diagrams illustrating a vertical transistor.
  • FIG. 8A is a top view.
  • FIG. 8B is a cross-sectional perspective view illustrating the depth direction of region d shown in FIG. 8A. Note that for clarity, illustration of some elements is omitted in FIGS. 8A and 8B.
  • the transistor 100T which is a vertical transistor, can be provided over the substrate 402.
  • the transistor 100T includes a conductive layer 404, a conductive layer 404e, an insulating layer 406, a semiconductor layer 408, a conductive layer 412a, and a conductive layer 412b.
  • the conductive layer 404 is a gate line and is electrically connected to a conductive layer 404e functioning as a gate electrode.
  • a portion of the insulating layer 406 functions as a gate insulating layer.
  • the conductive layer 412a functions as either a source electrode or a drain electrode.
  • the conductive layer 412b functions as the other of a source electrode and a drain electrode.
  • the entire region between the source electrode and the drain electrode that overlaps with the gate electrode via the gate insulating layer functions as a channel formation region. Further, in the semiconductor layer 408, a region in contact with the source electrode functions as a source region, and a region in contact with the drain electrode functions as a drain region.
  • a conductive layer 412a is provided over the substrate 402, an insulating layer 407 is provided over the conductive layer 412a, and a conductive layer 412b is provided over the insulating layer 407.
  • the insulating layer 407 has a region sandwiched between a conductive layer 412a and a conductive layer 412b.
  • the conductive layer 412a has a region that overlaps with the conductive layer 412b with the insulating layer 407 interposed therebetween.
  • the insulating layer 407 and the conductive layer 412b have an opening 441 that reaches the conductive layer 412a.
  • the conductive layer 412a and the conductive layer 412b may each have a stacked structure.
  • FIG. 8B shows an example in which the conductive layer 412a has a stacked structure of a conductive layer 412a_1 and a conductive layer 412a_2. Note that although FIG. 8B shows an example in which the conductive layer 412a_2 has a region over the conductive layer 412a_1 and is in contact with the semiconductor layer 408 in this region, the conductive layer 412a_2 and the semiconductor layer 408 are in contact with each other. You can also do that. Alternatively, a structure in which the conductive layer 412a_2 is not provided may be used.
  • the top surface shape of the opening 441 can be, for example, circular or elliptical. By making the top surface shape of the opening 441 circular, it is possible to improve the processing accuracy when forming the opening 441, and it is possible to form the opening 441 with a minute size. Note that the top surface shape of the opening 441 may be a polygon such as a triangle, a quadrangle (including a rectangle, a rhombus, and a square), a pentagon, or a shape with rounded corners of these polygons.
  • the opening 441 can be formed using a resist mask, for example.
  • the semiconductor layer 408 is provided to cover the opening 441.
  • the semiconductor layer 408 has a region in contact with the top surface and side surfaces of the conductive layer 412b, the side surfaces of the insulating layer 407, and the top surface of the conductive layer 412a.
  • the semiconductor layer 408 is electrically connected to the conductive layer 412a through the opening 441.
  • the semiconductor layer 408 has a shape that follows the top and side surfaces of the conductive layer 412b, the side surfaces of the insulating layer 407, and the top surface of the conductive layer 412a.
  • the semiconductor layer 408 is shown to have a single-layer structure in FIG. 8B and the like, one embodiment of the present invention is not limited to this.
  • the semiconductor layer 408 may have a stacked structure of two or more layers.
  • An insulating layer 406 functioning as a gate insulating layer of the transistor 100T is provided over the semiconductor layer 408, the conductive layer 412b, and the insulating layer 407 so as to cover the recessed portion originating from the opening 441.
  • the conductive layer 404e of the transistor 100T is provided over the insulating layer 406 so as to cover the recessed portion originating from the opening 441.
  • an insulating layer (not shown) is preferably provided over the conductive layer 404e and the insulating layer 406.
  • An opening reaching the conductive layer 404e is provided in the insulating layer, and the conductive layer 404 functioning as a gate line and the conductive layer 404e are electrically connected in the opening.
  • the conductive layer 404e has a region that overlaps with the semiconductor layer 408 with the insulating layer 406 interposed therebetween. Further, the conductive layer 404e has a region overlapping with the conductive layer 412a with the insulating layer 406 and the semiconductor layer 408 in between, and a region overlapping with the conductive layer 412b. The conductive layer 404e preferably covers the end of the conductive layer 412b on the opening 441 side. With this structure, the entire region of the semiconductor layer 408 that overlaps with the gate electrode with the gate insulating layer interposed between the source electrode and the drain electrode can function as a channel formation region.
  • the transistor 100T is a so-called top-gate transistor that has a gate electrode above the semiconductor layer 408. Furthermore, since the lower surface of the semiconductor layer 408 is in contact with the source electrode or the drain electrode, it can be called a TGBC (Top Gate Bottom Contact) transistor.
  • TGBC Top Gate Bottom Contact
  • the conductive layer 412a, the conductive layer 412b, and the conductive layer 404 can each function as a wiring, and the transistor 100T can be provided in a region where these wirings overlap. That is, in a circuit including the transistor 100T and the wiring, the area occupied by the transistor 100T and the wiring can be reduced. Therefore, the area occupied by the circuit can be reduced.
  • the conductive layer 412a, the conductive layer 412b, and the conductive layer 404 that function as wiring can be provided by processing different conductive films. Therefore, since one or more other conductive layers can be placed overlapping one of the conductive layers, the degree of freedom in layout is increased and the area occupied by the circuit can be reduced.
  • the region in contact with the conductive layer 412a functions as one of the source region and the drain region
  • the region in contact with the conductive layer 412b functions as the other of the source region and the drain region
  • the region between the source region and the drain region functions as a channel forming region.
  • the channel length of the transistor 100T is the distance between the source region and the drain region.
  • the channel length L100 of the transistor 100T is indicated by a dashed double-headed arrow.
  • the channel length L100 is the distance between the end of the region where the semiconductor layer 408 and the conductive layer 412a are in contact with each other and the end of the region where the semiconductor layer 408 and the conductive layer 412b are in contact in a cross-sectional view.
  • the channel length L100 is determined by the thickness of the insulating layer 407 and the angle between the side surface of the insulating layer 407 on the opening 441 side and the top surface of the conductive layer 412a, and is not affected by the performance of the exposure apparatus used for manufacturing the transistor. Therefore, the channel length L100 can be set to a value smaller than the limit resolution of the exposure apparatus, and a fine-sized transistor can be realized.
  • the on-current of the transistor 100T can be increased.
  • the transistor 100T By using the transistor 100T, a circuit that can operate at high speed can be manufactured. Furthermore, since the transistor can be made smaller, the area occupied by the circuit can be reduced.
  • FIG. 8B and the like illustrate a configuration in which the shape of the side surface of the insulating layer 407 on the opening 441 side is a straight line in cross-sectional view
  • one embodiment of the present invention is not limited to this.
  • the side surface of the insulating layer 407 on the opening 441 side may have a curved shape, or may have both a straight region and a curved region.
  • the channel width of the transistor 100T is the width of the source region or the width of the drain region in the direction orthogonal to the channel length direction.
  • the channel width is the width of the region where the semiconductor layer 408 and the conductive layer 412a are in contact with each other, or the width of the region where the semiconductor layer 408 and the conductive layer 412b are in contact with each other in the direction perpendicular to the channel length direction.
  • the channel width of the transistor 100T will be described as the width of a region where the semiconductor layer 408 and the conductive layer 412b are in contact with each other in a direction perpendicular to the channel length direction.
  • the channel width W100 of the transistor 100T is indicated by a solid double-headed arrow.
  • the channel width W100 is the length of the lower end of the conductive layer 412b on the opening 441 side when viewed from above.
  • the channel width W100 is determined by the top shape of the opening 441. Note that when the top surface shape of the opening 441 is circular, assuming that the diameter of the opening 441 is D441 and the thickness of the conductive layer 412b can be ignored, the channel width W100 can be calculated as "D441 ⁇ ".
  • the transistor 100T can be said to have a large channel width relative to the occupied area.
  • the channel width W100 By increasing the channel width W100, the on-state current of the transistor 100T can be increased, and a circuit capable of high-speed operation can be manufactured.
  • FIGS. 8A and 8B are diagrams illustrating an example in which a back gate is added to the configuration of FIGS. 8A and 8B.
  • the conductive layer 415 functioning as a back gate electrode is provided so as to be embedded in the insulating layer 407 (insulating layers 407a, 407c), and a part of the insulating layer 407c provided between the semiconductor layer 408 and the conductive layer 415 is a gate electrode. Functions as an insulating layer. Note that an insulating layer different from the insulating layer 407c may be used as the gate insulating layer.
  • the semiconductor material that can be used for the semiconductor layer 408 is not particularly limited.
  • an elemental semiconductor or a compound semiconductor can be used.
  • silicon or germanium can be used as the single semiconductor.
  • the compound semiconductor include gallium arsenide and silicon germanium.
  • an organic substance having semiconductor properties or a metal oxide having semiconductor properties also referred to as an oxide semiconductor
  • these semiconductor materials may contain impurities as dopants.
  • the crystallinity of the semiconductor material used for the semiconductor layer 408 is not particularly limited; ) may be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.
  • the semiconductor layer 408 preferably contains a metal oxide (oxide semiconductor).
  • metal oxides that can be used for the semiconductor layer 408 include indium oxide, gallium oxide, and zinc oxide.
  • the metal oxide contains at least indium (In) or zinc (Zn).
  • the metal oxide has two or three selected from indium, element M, and zinc.
  • element M is gallium, aluminum, silicon, boron, yttrium, tin, antimony, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, One or more types selected from cobalt and magnesium.
  • the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin. Element M is more preferably gallium.
  • the semiconductor layer 408 is made of, for example, indium oxide, indium gallium oxide (In-Ga oxide), indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), or indium titanium oxide.
  • In-Ti oxide gallium zinc oxide (Ga-Zn oxide), indium aluminum zinc oxide (In-Al-Zn oxide, also written as IAZO)
  • indium tin zinc oxide In-Sn-Zn oxide
  • In-Ti-Zn oxide indium titanium zinc oxide
  • In-Ga-Zn oxide also written as IGZO
  • indium gallium tin zinc oxide In-Ga-Sn -Zn oxide (also referred to as IGZTO)
  • indium gallium aluminum zinc oxide also referred to as In-Ga-Al-Zn oxide, IGAZO or IAGZO
  • indium tin oxide containing silicon or the like can be used.
  • the composition of the metal oxide included in the semiconductor layer 408 greatly affects the electrical characteristics and reliability of the transistor 100T. For example, by increasing the ratio of the number of indium atoms to the sum of the number of atoms of all metal elements contained in the metal oxide, a transistor with a large on-current can be realized.
  • the atomic ratio of indium is greater than or equal to the atomic ratio of zinc.
  • the atomic ratio of indium is greater than or equal to the atomic ratio of tin.
  • a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of tin can be used. Furthermore, it is preferable to use a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of tin.
  • a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of aluminum can be used. Furthermore, it is preferable to use a metal oxide in which the atomic ratio of zinc is higher than that of aluminum.
  • In-Ga-Zn oxide for the semiconductor layer 408, use a metal oxide in which the atomic ratio of indium to the sum of the atomic numbers of all metal elements contained is higher than the atomic ratio of gallium. Can be done. Furthermore, it is more preferable to use a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of gallium.
  • a metal oxide is used in which the atomic ratio of indium to the sum of the atomic numbers of all metal elements contained is higher than the atomic ratio of element M. be able to. Furthermore, it is more preferable to use a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of element M.
  • the analysis of the composition of metal oxides for example, the energy distributed X -ray division method (EDX: ENERGY DISPERSIVE X -RAY SPECTROMETRY, XPS: XPS: X -Ray PhotoElECTRON SPECTRON SPECTROMETR. Y), guidance bond plasma mass analysis method (ICP-MS: Inductively Coupled Plasma-Mass Spectrometry), or Inductively Coupled Plasma-Atomic Emis (ICP-AES) sion Spectrometry) can be used.
  • ICP-MS Inductively Coupled Plasma-Mass Spectrometry
  • ICP-AES Inductively Coupled Plasma-Atomic Emis
  • sion Spectrometry can be used.
  • analysis may be performed by combining two or more of these methods. Note that for elements with low content rates, the actual content rate and the content rate obtained by analysis may differ due to the influence of analysis accuracy. For example, when the content of element M is low, the content of element M obtained by analysis may be
  • a nearby composition includes a range of ⁇ 30% of a desired atomic ratio.
  • the atomic ratio of M when the atomic ratio of indium is 5, the atomic ratio of M is greater than 0.1. 2 or less, including cases where the atomic ratio of zinc is 5 or more and 7 or less.
  • the atomic ratio of indium when the atomic ratio of indium is 1, the atomic ratio of M is greater than 0.1. 2 or less, including cases where the atomic ratio of zinc is greater than 0.1 and 2 or less.
  • a sputtering method or an atomic layer deposition (ALD) method can be suitably used to form the metal oxide.
  • the atomic ratio of the target and the atomic ratio of the metal oxide may be different.
  • the atomic ratio of the metal oxide may be smaller than the atomic ratio of the target.
  • the atomic ratio of zinc contained in the target may be about 40% or more and 90% or less.
  • the semiconductor layer 408 may have a stacked structure including two or more metal oxide layers.
  • the two or more metal oxide layers included in the semiconductor layer 408 may have the same or approximately the same composition.
  • the same sputtering target can be used to form the layers, thereby reducing manufacturing costs.
  • the two or more metal oxide layers included in the semiconductor layer 408 may have different compositions.
  • a first metal oxide layer having a composition of In:M:Zn 1:3:4 [atomic ratio] or a composition close to that, and In:M:Zn provided on the first metal oxide layer.
  • a laminated structure with a second metal oxide layer having an atomic ratio of 1:1:1 or a composition close to this can be suitably used.
  • gallium or aluminum it is particularly preferable to use gallium or aluminum as the element M.
  • a laminated structure of one selected from indium oxide, indium gallium oxide, and IGZO and one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used. good.
  • a metal oxide layer having crystallinity is preferably used.
  • a metal oxide layer having a CAAC (c-axis aligned crystal) structure, a polycrystalline structure, a microcrystalline (NC: nano-crystal) structure, etc. can be used.
  • a crystalline metal oxide layer for the semiconductor layer 408 the density of defect levels in the semiconductor layer 408 can be reduced, and a highly reliable transistor can be realized.
  • the semiconductor layer 408 may have a stacked structure of two or more metal oxide layers having different crystallinity.
  • the layered structure includes a first metal oxide layer and a second metal oxide layer provided on the first metal oxide layer, and the second metal oxide layer
  • the structure can include a region having higher crystallinity than the oxide layer.
  • the second metal oxide layer may have a region having lower crystallinity than the first metal oxide layer.
  • the two or more metal oxide layers included in the semiconductor layer 408 may have the same or approximately the same composition. By forming a stacked structure of metal oxide layers having the same composition, for example, the same sputtering target can be used to form the layers, thereby reducing manufacturing costs.
  • a stacked structure of two or more metal oxide layers having different crystallinity can be formed.
  • the two or more metal oxide layers included in the semiconductor layer 408 may have different compositions.
  • the carrier concentration of the oxide semiconductor in a region functioning as a channel formation region is preferably 1 ⁇ 10 18 cm ⁇ 3 or less, and less than 1 ⁇ 10 17 cm ⁇ 3 . More preferably, it is less than 1 ⁇ 10 16 cm ⁇ 3 , even more preferably less than 1 ⁇ 10 13 cm ⁇ 3 , even more preferably less than 1 ⁇ 10 12 cm ⁇ 3 .
  • the lower limit of the carrier concentration of the oxide semiconductor in the region functioning as a channel formation region is not particularly limited, but can be set to 1 ⁇ 10 ⁇ 9 cm ⁇ 3 , for example.
  • a transistor using an oxide semiconductor (hereinafter referred to as an OS transistor) has extremely high field effect mobility compared to a transistor using amorphous silicon.
  • OS transistors have extremely low source-drain leakage current (hereinafter also referred to as off-state current) in the off state, and can retain the charge accumulated in the capacitor connected in series with the transistor for a long period of time. is possible. Further, by applying an OS transistor, power consumption of the semiconductor device can be reduced.
  • Insulating layer 407 When an oxide semiconductor is used for the semiconductor layer 408, an inorganic insulating material can be suitably used for the insulating layer 407 (the insulating layer 407a, the insulating layer 407b, and the insulating layer 407c). Note that the insulating layer 407 may have a stacked structure of an inorganic insulating material and an organic insulating material.
  • the inorganic insulating material one or more of oxides, oxynitrides, nitrided oxides, and nitrides can be used.
  • the insulating layer 407 is made of, for example, silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, silicon nitride, silicon nitride oxide. , and aluminum nitride.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen.
  • a nitrided oxide refers to a material whose composition contains more nitrogen than oxygen.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.
  • an oxide or an oxynitride for the insulating layer 407b.
  • the insulating layer 407b it is preferable to use a film that releases oxygen when heated.
  • silicon oxide or silicon oxynitride can be preferably used, for example.
  • the insulating layer 407b releases oxygen, oxygen can be supplied from the insulating layer 407b to the semiconductor layer 408.
  • oxygen vacancies (V O ) and V OH (defects in which hydrogen is added to oxygen vacancies) in the semiconductor layer 408 are eliminated. It is possible to provide a transistor that can reduce the amount of carbon dioxide, exhibits good electrical characteristics, and has high reliability.
  • the insulating layer 407b preferably has a high oxygen diffusion coefficient.
  • the treatment for supplying oxygen to the semiconductor layer 408 includes heat treatment in an atmosphere containing oxygen, plasma treatment in an atmosphere containing oxygen, and the like.
  • Oxygen vacancies (V O ) and V O H in the channel formation region of the transistor 100T are preferably small.
  • the channel length L100 is short, the influence of oxygen vacancies (V O ) and V O H in the channel forming region on the electrical characteristics and reliability becomes large.
  • the carrier concentration in the channel formation region increases due to the diffusion of V OH from the source region or the drain region to the channel formation region, which may cause a fluctuation in the threshold voltage of the transistor 100T or a decrease in reliability.
  • the shorter the channel length L100 of the transistor 100T the greater the influence of such V O H diffusion on the electrical characteristics and reliability.
  • each of the insulating layer 407a and the insulating layer 407c is difficult for oxygen to pass through.
  • the insulating layer 407a and the insulating layer 407c function as a blocking film that suppresses desorption of oxygen from the insulating layer 407b. Further, it is preferable that hydrogen hardly permeates each of the insulating layer 407a and the insulating layer 407c.
  • the insulating layer 407a and the insulating layer 407c function as a blocking film that suppresses hydrogen from diffusing from outside the transistor to the semiconductor layer 408 through the insulating layer 407. It is preferable that the film density of the insulating layer 407a and the insulating layer 407c is high.
  • the film density of the insulating layer 407a and the insulating layer 407c is preferably higher than that of the insulating layer 407b.
  • silicon oxide or silicon oxynitride is used for the insulating layer 407b
  • silicon nitride, silicon nitride oxide, or aluminum oxide can be suitably used for the insulating layer 407a and the insulating layer 407c, respectively.
  • the insulating layer 407a and the insulating layer 407c each have a region containing more nitrogen than the insulating layer 407b, for example.
  • a material containing more nitrogen than the insulating layer 407b can be used for each of the insulating layer 407a and the insulating layer 407c. It is preferable to use nitride or nitride oxide for each of the insulating layer 407a and the insulating layer 407c.
  • silicon nitride or silicon nitride oxide can be suitably used for the insulating layer 407a and the insulating layer 407c.
  • oxygen contained in the insulating layer 407b diffuses upward from a region of the insulating layer 407b that is not in contact with the semiconductor layer 408 (for example, the top surface of the insulating layer 407b), the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 increases. It may become less.
  • oxygen contained in the insulating layer 407b can be suppressed from diffusing from a region of the insulating layer 407 that is not in contact with the semiconductor layer 408.
  • the insulating layer 407a under the insulating layer 407b, it is possible to suppress diffusion downward from the region of the insulating layer 407 that is not in contact with the semiconductor layer 408. Therefore, the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 increases, and oxygen vacancies (V O ) and V O H in the semiconductor layer 408 can be reduced. Therefore, a transistor exhibiting good electrical characteristics and high reliability can be obtained.
  • Oxygen contained in the insulating layer 407b may oxidize the conductive layer 412a and the conductive layer 412b, resulting in increased resistance. Further, when the conductive layers 412a and 412b are oxidized by oxygen contained in the insulating layer 407b, the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 may decrease. By providing the insulating layer 407a between the insulating layer 407b and the conductive layer 412a, oxidation of the conductive layer 412a and increase in resistance can be suppressed.
  • the insulating layer 407c between the insulating layer 407b and the conductive layer 412b, oxidation of the conductive layer 412b and increase in resistance can be suppressed.
  • the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 increases, making it possible to reduce oxygen vacancies (V O ) and V O H in the semiconductor layer 408, exhibiting good electrical characteristics, and A highly reliable transistor can be obtained.
  • the insulating layer 407a and the insulating layer 407c preferably have a thickness that functions as an oxygen and hydrogen blocking film. If the insulating layer 407a and the insulating layer 407c are thin, their function as a blocking film may be reduced. On the other hand, when the insulating layer 407a and the insulating layer 407c are thick, the area of the semiconductor layer 408 in contact with the insulating layer 407b becomes narrow, and the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 decreases. There is. Each of the insulating layer 407a and the insulating layer 407c may be thinner than the insulating layer 407b.
  • oxygen is supplied from the insulating layer 407 to the semiconductor layer 408, thereby reducing oxygen vacancies (V O ) and V O H in the channel formation region. Therefore, a transistor exhibiting good electrical characteristics and high reliability can be obtained.
  • a structure may be employed in which either or both of the insulating layer 407a and the insulating layer 407c are not provided.
  • the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 which function as a source electrode, a drain electrode, or a gate electrode, are each made of chromium, copper, aluminum, gold, silver, zinc, tantalum, titanium, tungsten, manganese, It can be formed using one or more of nickel, iron, cobalt, molybdenum, and niobium, or an alloy containing one or more of the above-mentioned metals.
  • a low-resistance conductive material containing one or more of copper, silver, gold, or aluminum can be suitably used.
  • copper or aluminum is preferable because it is excellent in mass productivity.
  • a metal oxide film (also referred to as an oxide conductor) can be used for each of the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415.
  • the oxide conductor for example, In-Sn oxide (ITO), In-W oxide, In-W-Zn oxide, In-Ti oxide, In-Ti-Sn oxide. , In-Zn oxide, In-Sn-Si oxide (ITSO), and In-Ga-Zn oxide.
  • oxide conductor (OC)
  • OC oxide conductor
  • the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 may each have a stacked structure of a conductive film containing the above-described oxide conductor (metal oxide) and a conductive film containing a metal or an alloy. By using a conductive film containing metal or an alloy, wiring resistance can be reduced.
  • the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 may each be formed by applying a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). good. By using the Cu-X alloy film, it can be processed by a wet etching process, making it possible to suppress manufacturing costs.
  • X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti.
  • the same material or different materials may be used for each of the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415.
  • the conductive layers 412a and 412b will be specifically described using a structure in which a metal oxide is used for the semiconductor layer 408 as an example.
  • the conductive layer 412a and the conductive layer 412b may be oxidized by oxygen contained in the semiconductor layer 408, resulting in increased resistance.
  • Oxygen contained in the insulating layer 407b may oxidize the conductive layer 412a and the conductive layer 412b, resulting in increased resistance.
  • oxygen vacancies (V O ) in the semiconductor layer 408 may increase.
  • the conductive layers 412a and 412b are oxidized by oxygen contained in the insulating layer 407b, the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 may decrease.
  • the conductive layer 412a and the conductive layer 412b are each made of a material that is not easily oxidized. It is preferable that an oxide conductor be used for each of the conductive layer 412a and the conductive layer 412b.
  • an oxide conductor be used for each of the conductive layer 412a and the conductive layer 412b.
  • ITO In-Sn oxide
  • ITSO In-Sn-Si oxide
  • a nitride conductor may be used for the conductive layer 412a.
  • Nitride conductors include tantalum nitride and titanium nitride.
  • the conductive layer 412a may have a stacked structure of the materials described above.
  • the conductive layer 412a and the conductive layer 412b may be made of the same material or different materials.
  • the conductive layer 412b has a region in contact with the transistor 100T.
  • oxygen vacancies (V O ) and V O H in the semiconductor layer 408 can be reduced.
  • the conductive layer 412a and the conductive layer 412b in contact with the semiconductor layer 408 are preferably made of a material that is not easily oxidized. However, when using a material that is difficult to oxidize, the resistance may become high. Since the conductive layer 412a and the conductive layer 412b function as wiring, they preferably have low resistance. Therefore, by using a material that is difficult to oxidize for the conductive layer 412a_1 that has a region in contact with the semiconductor layer 408, and using a material with low resistance for the conductive layer 412a_2 that does not have a region in contact with the semiconductor layer 408, the resistance of the conductive layer 412a can be reduced. It can be lowered. Furthermore, oxygen vacancies (V O ) and V OH in the semiconductor layer 408 can be reduced, and a transistor can exhibit good electrical characteristics and have high reliability.
  • the conductive layer 412a_1 one or more of an oxide conductor and a nitride conductor can be suitably used.
  • the conductive layer 412a_2 is preferably made of a material having a lower resistance than the conductive layer 412a_1.
  • the conductive layer 412a_2 for example, one or more of copper, aluminum, titanium, tungsten, and molybdenum, or an alloy containing one or more of the above metals can be suitably used.
  • In-Sn-Si oxide (ITSO) can be suitably used for the conductive layer 412a_1, and tungsten can be suitably used for the conductive layer 412a_2.
  • the structure of the conductive layer 412a may be determined depending on the wiring resistance required for the conductive layer 412a. For example, if the length of the wiring (conductive layer 412a) is short and the required wiring resistance is relatively high, the conductive layer 412a may have a single-layer structure and a material that is not easily oxidized may be used. On the other hand, when the length of the wiring (conductive layer 412a) is long and the required wiring resistance is relatively low, it is preferable to use a stacked structure of a material that is not easily oxidized and a material that has low resistance for the conductive layer 412a.
  • the structure of the conductive layer 412a can be applied to other conductive layers.
  • the insulating layer 406 that functions as a gate insulating layer preferably has a low defect density. Since the defect density of the insulating layer 406 is low, the transistor can exhibit good electrical characteristics. Further, the insulating layer 406 preferably has a high dielectric strength voltage. Since the insulating layer 406 has a high dielectric strength voltage, a highly reliable transistor can be obtained.
  • the insulating layer 406 for example, one or more of an oxide, an oxynitride, a nitride oxide, and a nitride having insulating properties can be used.
  • the insulating layer 406 is made of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, One or more of yttrium oxynitride and Ga-Zn oxide can be used.
  • the insulating layer 406 may be a single layer or a laminated layer.
  • the insulating layer 406 may have a stacked structure of oxide and nitride, for example.
  • a material with a high dielectric constant also referred to as a high-k material
  • the insulating layer 406 preferably releases little impurity (eg, water and hydrogen) from itself. Since little impurity is released from the insulating layer 406, diffusion of impurities into the semiconductor layer 408 is suppressed, and a transistor with good electrical characteristics and high reliability can be obtained.
  • impurity eg, water and hydrogen
  • the insulating layer 406 will be specifically described using a structure in which a metal oxide is used for the semiconductor layer 408 as an example.
  • an oxide for at least the side of the insulating layer 406 that is in contact with the semiconductor layer 408.
  • the insulating layer 406 for example, one or more of silicon oxide and silicon oxynitride can be suitably used. Further, it is more preferable to use a film that releases oxygen when heated for the insulating layer 406.
  • the insulating layer 406 may have a stacked structure.
  • the insulating layer 406 can have a stacked structure of an oxide film in contact with the semiconductor layer 408 and a nitride film in contact with the conductive layer 404e.
  • the oxide film for example, one or more of silicon oxide and silicon oxynitride can be suitably used. Silicon nitride can be suitably used as the nitride film.
  • Substrate 402 There are no major restrictions on the material of the substrate 402, but it must have at least enough heat resistance to withstand subsequent heat treatment.
  • a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, an SOI substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate, It may also be used as the substrate 402.
  • a substrate on which a semiconductor element is provided may be used as the substrate 402. Note that the shapes of the semiconductor substrate and the insulating substrate may be circular or square.
  • a flexible substrate may be used as the substrate 402, and the transistor 100T and the like may be formed directly on the flexible substrate.
  • a peeling layer may be provided between the substrate 402 and the transistor 100T. The peeling layer can be used to separate a semiconductor device from the substrate 402 and transfer it to another substrate after partially or completely completing a semiconductor device thereon. In this case, the transistor 100T and the like can be transferred to a substrate with poor heat resistance or a flexible substrate.
  • This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.
  • FIG. 10 shows a cross-sectional view of a display device 100, which is a display device of one embodiment of the present invention.
  • FIG. 10 shows a part of the area including the FPC 118 in the display device 100 shown in FIG.
  • the display device 100 shown in FIG. 10A includes a transistor 201, a transistor 202, a transistor 203, a transistor 204, a transistor 205, a light emitting device 90G that emits green light, and a light emitting device 90B that emits blue light between the substrate 110 and the substrate 140. , a sensor electrode 130X, a sensor electrode 130Y, and the like.
  • the light emitting device 90G includes a conductive layer 142a, a conductive layer 146a on the conductive layer 142a, and a conductive layer 149a on the conductive layer 146a. All of the conductive layers 142a, 146a, and 149a can be called a pixel electrode, or some of them can also be called a pixel electrode.
  • the light emitting device 90G includes a conductive layer 142b, a conductive layer 146b on the conductive layer 142b, and a conductive layer 149b on the conductive layer 146b.
  • the conductive layer 142a is connected to the conductive layer 222b of the transistor 203 through an opening provided in the insulating layer 214.
  • the end of the conductive layer 146a is located outside the end of the conductive layer 142a.
  • the ends of the conductive layer 146a and the ends of the conductive layer 149a are aligned or approximately aligned.
  • a conductive layer that functions as a reflective electrode can be used for the conductive layer 142a and the conductive layer 146a
  • a conductive layer that functions as a transparent electrode can be used for the conductive layer 149a.
  • the conductive layers 142b, 146b, and 149b in the light emitting device 90B are the same as the conductive layers 142a, 146a, and 149a in the light emitting device 90G, so a detailed description thereof will be omitted.
  • Recesses are formed in the conductive layers 142a and 142b so as to cover the openings provided in the insulating layer 214.
  • a layer 148 is embedded in the recess.
  • the layer 148 has a function of flattening the recessed portions of the conductive layers 142a and 142b.
  • conductive layers 146a, 146b are provided which are electrically connected to the conductive layers 142a, 142b. Therefore, the regions of the conductive layers 142a and 142b that overlap with the recesses can also be used as light-emitting regions or light-receiving regions, and the aperture ratio of the pixels can be increased.
  • Layer 148 may be an insulating layer or a conductive layer.
  • various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate.
  • layer 148 is preferably formed using an insulating material, and particularly preferably formed using an organic insulating material.
  • an organic insulating material that can be used for the resin layer 326 described above can be applied to the layer 148.
  • a protective layer 321 is provided on the light emitting devices 90G and 90B.
  • a solid encapsulant layer 150 is provided on the protective layer 321 to protect the light emitting device.
  • the display device 100 is a top emission type. Light emitted by the light emitting device is emitted toward the substrate 140 side.
  • the substrate 140 it is preferable to use a material that is highly transparent to visible light.
  • the pixel electrode includes a material that reflects visible light
  • the counter electrode includes a material that transmits visible light.
  • the transistors 201 to 205 are all formed on the substrate 110.
  • the transistor 203 and the transistor 204 can be manufactured using the same material and the same process. Further, the transistor 201, the transistor 202, and the transistor 205 can be manufactured using the same material and using the same process.
  • Vertical transistors can be used as the transistors 201, 202, and 205.
  • Embodiment 2 can be referred to for details of the vertical transistor.
  • vertical transistors may also be applied to the transistors 203 and 204 included in the display portion 111.
  • an insulating layer 211 On the substrate 110, an insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order.
  • a part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • a portion of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • An insulating layer 215 is provided to cover the transistor.
  • the insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.
  • an inorganic insulating film as each of the insulating layer 211, the insulating layer 213, and the insulating layer 215.
  • the inorganic insulating film for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used.
  • a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used. Further, two or more of the above-mentioned insulating films may be stacked and used.
  • An organic insulating layer is suitable for the insulating layer 214 that functions as a planarization layer.
  • materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimide amide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.
  • the insulating layer 214 may have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer.
  • a recess in the insulating layer 214 can be suppressed during processing of the conductive layer 142a, the conductive layer 146a, the conductive layer 149a, or the like.
  • a recess may be provided in the insulating layer 214 during processing of the conductive layer 142a, the conductive layer 146a, the conductive layer 149a, or the like.
  • the transistors 202 and 203 include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, and an insulating layer 211 functioning as a gate insulating layer. It has a layer 213 and a conductive layer 223 that functions as a gate. Here, a plurality of layers obtained by processing the same conductive film are given the same hatching pattern.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231.
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.
  • the structure of the transistor included in the display device of this embodiment is not particularly limited.
  • a vertical transistor, a planar transistor, a fin transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • either a top gate type or a bottom gate type transistor structure may be used.
  • the gate is not limited to both the upper and lower sides of the semiconductor layer in which the channel is formed, but may be provided only on one side.
  • the transistors 202 and 203 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates.
  • the transistor may be driven by connecting the two gates and supplying them with the same signal.
  • the transistor may be driven by applying a potential for controlling the threshold voltage to one of the two gates and applying a driving potential to the other.
  • the crystallinity of the semiconductor material used for the transistor is not particularly limited, and may be an amorphous semiconductor, a single crystal semiconductor, or a semiconductor with crystallinity other than single crystal (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor material with a crystalline region in part). Any of the following semiconductors may be used. It is preferable to use a single crystal semiconductor or a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.
  • the semiconductor layer of the transistor preferably includes a metal oxide (also referred to as an oxide semiconductor).
  • the display device of this embodiment preferably uses an OS transistor in which a metal oxide is used in a channel formation region.
  • the description of Embodiment 2 can be referred to.
  • All of the transistors included in the display device 100 can be OS transistors. Alternatively, all of the transistors included in the display device 100 can be Si transistors. Alternatively, some of the transistors included in the display device 100 may be OS transistors, and the rest may be Si transistors.
  • a configuration may be adopted in which an OS transistor is provided on a Si transistor.
  • a configuration in which OS transistors are stacked may be used.
  • Examples of silicon include single crystal silicon, polycrystalline silicon, amorphous silicon, and the like.
  • a transistor hereinafter also referred to as an LTPS transistor
  • LTPS transistors have high field effect mobility and good frequency characteristics.
  • Si transistors such as LTPS transistors
  • circuits that need to be driven at high frequencies (for example, source drivers) can be built on the same substrate as the display section.
  • source drivers for example, source drivers
  • an LTPS transistor for example, by using both an LTPS transistor and an OS transistor in the display portion 111, a display device with low power consumption and high driving ability can be realized. Further, a configuration in which an LTPS transistor and an OS transistor are combined is sometimes referred to as an LTPO. Note that as a more preferable example, it is preferable to apply an OS transistor to a transistor that functions as a switch for controlling conduction and non-conduction between wirings, and to apply an LTPS transistor to a transistor that controls current.
  • one of the transistors included in the display portion 111 functions as a transistor for controlling current flowing to a light-emitting device, and can also be called a driving transistor.
  • One of the source and drain of the drive transistor is electrically connected to a pixel electrode of the light emitting device. It is preferable to use an LTPS transistor as the drive transistor. Thereby, the current flowing through the light emitting device in the pixel circuit can be increased.
  • the other transistor included in the display portion 111 functions as a switch for controlling selection and non-selection of pixels, and can also be called a selection transistor.
  • the gate of the selection transistor is electrically connected to the gate line, and one of the source and drain is electrically connected to the source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the pixel gradation to be maintained even if the frame frequency is significantly reduced (for example, 1 fps or less), so power consumption can be reduced by stopping the driver when displaying still images. can.
  • the display device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.
  • a display device of one embodiment of the present invention has a structure including an OS transistor and a light-emitting device with an MML (metal maskless) structure.
  • MML metal maskless
  • leakage current that may flow through the transistor and leakage current also referred to as lateral leakage current, side leakage current, or the like
  • an observer can observe one or more of image sharpness, image sharpness, high chroma, and high contrast ratio.
  • a layer provided between light-emitting devices for example, an organic layer commonly used among light-emitting devices, also referred to as a common layer
  • a common layer for example, an organic layer commonly used among light-emitting devices, also referred to as a common layer
  • FIGS. 10B and 10C illustrate other configuration examples of transistors that can be used for the transistor 203 and the transistor 204.
  • the transistors 209 and 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 having a channel formation region 231i and a pair of low resistance regions 231n, and one of the pair of low resistance regions 231n.
  • a conductive layer 222a connected to the other of the pair of low resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223.
  • Insulating layer 211 is located between conductive layer 221 and channel formation region 231i.
  • the insulating layer 225 is located at least between the conductive layer 223 and the channel forming region 231i.
  • an insulating layer 218 covering the transistor may be provided.
  • the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231.
  • Conductive layer 222a and conductive layer 222b are connected to low resistance region 231n through openings provided in insulating layer 225 and insulating layer 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source, and the other functions as a drain.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231, but does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 10C can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • an insulating layer 215 is provided to cover an insulating layer 225 and a conductive layer 223, and a conductive layer 222a and a conductive layer 222b are each connected to a low resistance region 231n through an opening in the insulating layer 215.
  • a connecting portion 230 is provided in a region of the substrate 110 where the substrate 140 does not overlap.
  • the wiring 165 is electrically connected to the FPC 118 via the conductive layer 166 and the connection layer 242.
  • the conductive layer 166 includes a conductive film obtained by processing the same conductive film as the conductive layers 142a and 142b, a conductive film obtained by processing the same conductive film as the conductive layers 146a and 146b, and the conductive layer 149a. , 149b and a conductive film obtained by processing the same conductive film.
  • the conductive layer 166 is exposed on the upper surface of the connection portion 230. Thereby, the connecting portion 230 and the FPC 118 can be electrically connected via the connecting layer 242.
  • connection layer 242 an anisotropic conductive film (ACF), anisotropic conductive paste (ACP), or the like can be used.
  • ACF anisotropic conductive film
  • ACP anisotropic conductive paste
  • connection portion 232 to which the FPC 119 is electrically connected can also have the same configuration as above.
  • one of the sensor electrode 130X and the sensor electrode 130Y which functions as an electrode of a touch sensor, is provided on the solid sealing layer 150. Further, the other of the sensor electrode 130X or the sensor electrode 130Y is provided with the insulating layer 328 interposed therebetween.
  • the sensor electrode 130X and the sensor electrode 130Y may be formed on the solid sealing layer 150, and the insulating layer 328 may be provided between the sensor electrode 130X and the sensor electrode 130Y at the intersection thereof.
  • the sensor electrode 130X extends in the direction in which the drive circuit 114 is provided, and is electrically connected to the connection electrode 311b through an opening provided in the solid sealing layer 150 or the like.
  • FIG. 10 shows a configuration in which the sensor electrode 130X and the connection electrode 311b are connected via the metal layer 315, the sensor electrode 130X and the connection electrode 311b may be in direct contact with each other.
  • the connection electrode 311b can have the same configuration as the pixel electrode.
  • An insulating layer 151 is provided on the insulating layer 328 and the other of the sensor electrode 130X or the sensor electrode 130Y. It is preferable to provide a light shielding layer 135 on the insulating layer 151.
  • the light shielding layer 135 can be provided between adjacent light emitting devices and having regions overlapping with the drive circuits 112, 113, and 114.
  • the insulating layer 151 and the light shielding layer 135 are bonded to the substrate 140 using an adhesive layer 153. Further, various optical members such as a circularly polarizing plate can be arranged on the outside of the substrate 140.
  • a substrate made of a material that can be used for the substrate 402 shown in Embodiment 2 can be used.
  • a silicon substrate on which an arithmetic circuit, a memory circuit, etc. are formed can be used.
  • glass epoxy resin or the like may be used.
  • This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.
  • FIG. 12A is a diagram illustrating a form of a display device 101 having a camera in an area overlapping with a display section.
  • the basic configuration of the display device 101 can be the same as that of the display device 100 described in Embodiment 1 etc., and a camera is provided on the back side of the substrate 110 (the side opposite to the display section 111). It has 116.
  • the camera 116 is a camera mainly used for photographing the user, and is also called an in-camera.
  • illustration of the substrate 140 facing the substrate 110 is omitted. Further, a region where the display unit 111 and the camera 116 overlap and the vicinity thereof is defined as a region D.
  • FIG. 12B is a diagram showing a cross section of region D (cross section along D1-D2 shown in FIG. 12A). Further, FIG. 12C is a top view of region D. Note that the sensor electrode 130 is not illustrated in FIG. 12C.
  • a pixel PIX1 is arranged in an area that does not overlap with the camera 116
  • a pixel PIX2 is arranged in an area that overlaps with the camera 116 or a lens 116L included in the camera 116.
  • the pixels PIX1 and PIX2 described here may have a function as sub-pixels.
  • the camera 116 can be replaced with a camera lens 116L as appropriate.
  • the pixel pitch is larger than in the area where the pixel PIX1 is arranged.
  • the pixel density is low.
  • the pixel PIX2 has a larger pixel size than the pixel PIX1.
  • the area of the light emitting device of the pixel PIX2 is larger than that of the pixel PIX1.
  • the amount of light incident on the camera 116 can be increased compared to the case where the camera 116 is overlapped with the area where the pixel PIX1 is arranged, and more data related to imaging can be acquired. Furthermore, the portion lost due to the shadow of pixel PIX2 can be compensated for by image correction with reference to surrounding images. Therefore, even if the pixel PIX2 is placed on the camera 116, it is possible to capture an image.
  • the area where pixel PIX2 is placed has lower definition than the area where pixel PIX1 is placed, but by increasing the pixel size (area of the light emitting device), it is equivalent to the area where pixel PIX1 is placed.
  • the brightness can be set to .
  • the area where the pixel PIX2 is arranged is a sufficiently small area with respect to the entire display section, the user can visually recognize the display without feeling it to be unnatural.
  • the camera 116 can be placed in an area overlapping with the display section 111, the area of the display section 111 can be expanded. Further, it is possible to eliminate the need for a pinhole or a cutout, which is necessary when the display unit 111 and the camera 116 are arranged in an overlapping manner.
  • FIG. 13A and 13B are top views of region D, showing sensor electrodes 130.
  • FIG. Note that for clarity, pixels PIX1 and PIX2 are not shown. Note that, in the sensor electrode 130, the conductive layers connected in the X direction and the conductive layers connected in the Y direction will not be distinguished from each other in the description herein.
  • FIG. 13A is a top view when a transparent conductive film 131T is used as the sensor electrode 130. Since the light-transmitting conductive film 131T has sufficient light-transmitting properties, it can be placed overlapping the camera 116.
  • FIG. 13B is a top view when a metal layer 131M is used as the sensor electrode 130.
  • the metal layer 131M does not have light-transmitting properties, so as shown in FIG. 14A, the metal layer 131M is arranged in a region that does not overlap with the pixel PIX1 and the pixel PIX2. Note that in FIG. 14A, a portion corresponding to the outer shape of the sensor electrode 130 is shown by a broken line.
  • the metal layer 131M has a region that overlaps with the gate line GL and source line SL electrically connected to the pixel PIX (pixels PIX1, PIX2) via an insulating layer (not shown). It is preferable to arrange. With this configuration, the light emitted by the light emitting device can be emitted to the outside without being blocked.
  • the area of the metal layer 131M smaller than in the region where the pixel PIX1 is arranged.
  • FIG. 15A is a top view when the sensor electrode 130 includes a transparent conductive film 131T and a metal layer 131M.
  • the sensor electrode 130 is provided with a metal layer 131M in the region overlapping with the pixel PIX1
  • the sensor electrode 130 is provided with a transparent conductive film 131T in the region overlapping with the pixel PIX2. Note that near the end of the region where the pixel PIX2 is provided, the transparent conductive film 131T extending to the region overlapping with the pixel PIX1 and the metal layer 131M are in contact with each other and can be electrically connected to each other.
  • 16A and 16B show a configuration in which the sensor electrode 130 is provided in the metal layer 131M in the region overlapping with the pixel PIX1, and the sensor electrode 130 is not provided in the region overlapping with the pixel PIX2. Since the diameter of the lens 116L is smaller than that of a fingertip or the like, even if the sensor electrode 130 is not provided on the camera 116, there may be no problem depending on the application. In this configuration, the number of obstacles that block the light entering the lens 116L is minimized, so it is easy to improve the imaging function.
  • one or both of the X direction and the Y direction of the sensor electrode 130 may be disconnected in a region overlapping with the camera 116.
  • the drive circuit 114 (drive circuits 114a, 114b) is placed on both sides of the sensor electrode 130, and scanning is performed from both sides at the same timing. You just need to input the pulse voltage. In this case, since there is no disconnection in the Y direction, reading can be performed from one side in all columns.
  • the drive circuit 114 (drive circuits 114a, 114b) is installed on both sides of the sensor electrode 130 as in FIG. 17A. Deploy. Then, by scanning at the same timing from both sides and inputting pulse voltages, it is sufficient to read out from both sides in a column where the sensor electrode 130 is disconnected in the Y direction.
  • the metal layer 131M in the embodiment having the metal layer 131M described above, for example, the case where the long axis of the metal layer 131M forms an angle of 45 degrees with the outer peripheral side of the display section is illustrated, but as shown in FIG. 18A, A configuration may be adopted in which the metal layer 131M is parallel to the outer peripheral side of the sensor electrode 130. With this configuration, it is possible to make it difficult to visually recognize the reflected light of the metal layer 131M with respect to external light.
  • the metal layer 131M is arranged so as to surround one pixel PIX, but as shown in FIGS. 18B and 18C, a plurality of metal layers such as 3 or 6
  • the metal layer 131M may be arranged to surround the pixel.
  • This embodiment mode can be implemented by appropriately combining at least a part of it with other embodiment modes described in this specification.
  • Electronic devices using the display device include display devices such as televisions and monitors, lighting devices, desktop or notebook personal computers, word processors, and storage devices such as DVDs (Digital Versatile Discs).
  • image playback devices that play back still images or videos, portable CD players, radios, tape recorders, headphone stereos, stereos, table clocks, wall clocks, cordless telephone handsets, transceivers, mobile phones, car phones, portable game consoles, Tablet devices, large game machines such as pachinko machines, calculators, portable information terminals (also referred to as "personal digital assistants"), electronic notebooks, electronic book terminals, electronic translators, voice input devices, video cameras, digital stills Cameras, electric shavers, high-frequency heating devices such as microwave ovens, electric rice cookers, electric washing machines, vacuum cleaners, water heaters, electric fans, hair dryers, air conditioning equipment such as air conditioners, humidifiers, dehumidifiers, dishwashers, Examples include dish dryers, clothes dryers, bedding dryers, electric refrigerators
  • a moving object that is propelled by an electric motor using electric power from a power storage device is also included in the category of electronic equipment.
  • Examples of the above-mentioned moving objects include electric vehicles (EV), hybrid vehicles (HV) that have both an internal combustion engine and an electric motor, plug-in hybrid vehicles (PHV), tracked vehicles whose tires and wheels have been changed to endless tracks, and electric assist vehicles.
  • Examples include motorized bicycles including bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, star probes, and spacecraft.
  • a display device can be used for a display portion, a communication device, and the like built into these electronic devices.
  • Electronic equipment uses sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, power, radiation, (including functions to detect, detect, or measure flow rate, humidity, slope, vibration, odor, or infrared rays).
  • Electronic devices can have various functions. For example, functions that display various information (still images, videos, text images, etc.) on the display, touch panel functions, calendars, functions that display date or time, etc., functions that execute various software (programs), wireless communication. It can have a function, a function of reading a program or data recorded on a recording medium, etc.
  • FIGS. 19A to 19F An example of an electronic device is shown in FIGS. 19A to 19F.
  • FIG. 19A shows an example of a wristwatch-type portable information terminal.
  • the mobile information terminal 6100 includes a housing 6101, a display portion 6102, a band 6103, operation buttons 6105, and the like.
  • the portable information terminal 6100 can be made smaller.
  • FIG. 19B shows an example of a mobile phone.
  • the portable information terminal 6200 includes a display section 6202 built into a housing 6201, as well as operation buttons 6203, a speaker 6204, a microphone 6205, and the like. Further, the display portion 6202 includes a touch sensor and functions as a touch panel.
  • the mobile information terminal 6200 includes a camera 6209 in an area overlapping with the display portion 6202. With this configuration, it is possible to eliminate the need for a pinhole or a notch formed in the display portion 6202 for arranging the camera.
  • the portable information terminal 6200 can be made smaller.
  • FIG. 19C shows an example of a cleaning robot.
  • the cleaning robot 6300 includes a display portion 6302 placed on the top surface of a housing 6301, a plurality of cameras 6303 placed on the side, a brush 6304, operation buttons 6305, various sensors, and the like.
  • the display portion 6302 includes a touch sensor and functions as a touch panel.
  • the cleaning robot 6300 is equipped with tires, a suction port, and the like.
  • the cleaning robot 6300 is self-propelled, detects dirt 6310, and can suck the dirt from a suction port provided on the bottom surface.
  • the cleaning robot 6300 can analyze the image taken by the camera 6303 and determine the presence or absence of obstacles such as walls, furniture, or steps. Furthermore, if an object such as wiring that is likely to become entangled with the brush 6304 is detected through image analysis, the rotation of the brush 6304 can be stopped.
  • the cleaning robot 6300 can be downsized.
  • FIG. 19D shows an example of a robot.
  • the robot 6400 shown in FIG. 19D includes a calculation device 6409, an illuminance sensor 6401, a microphone 6402, an upper camera 6403, a speaker 6404, a display section 6405, a lower camera 6406, an obstacle sensor 6407, and a movement mechanism 6408.
  • the microphone 6402 has a function of detecting the user's speaking voice, environmental sounds, and the like. Furthermore, the speaker 6404 has a function of emitting sound. Robot 6400 can communicate with a user using microphone 6402 and speaker 6404.
  • the display unit 6405 has a function of displaying various information.
  • the robot 6400 can display information desired by the user on the display section 6405.
  • the display portion 6405 includes a touch sensor and functions as a touch panel. Further, the display unit 6405 may be a removable information terminal, and by installing it at a fixed position on the robot 6400, charging and data exchange are possible.
  • the display portion 6405 includes an illuminance sensor, a camera, operation buttons, and the like, and the display portion 6405 can be touch-operated with a stylus pen or the like.
  • Functions of the display section 6405 include voice calls, video calls, email, notebooks, Internet connection, music playback, and the like.
  • the upper camera 6403 and the lower camera 6406 have a function of capturing images around the robot 6400. Further, the obstacle sensor 6407 can detect the presence or absence of an obstacle in the direction of movement of the robot 6400 when the robot 6400 moves forward using the moving mechanism 6408.
  • the robot 6400 uses an upper camera 6403, a lower camera 6406, and an obstacle sensor 6407 to recognize the surrounding environment and can move safely.
  • the light-emitting device of one embodiment of the present invention can be used for the display portion 6405.
  • the robot 6400 can be made smaller.
  • FIG. 19E shows an example of a television receiver.
  • a television receiver 6500 shown in FIG. 19E includes a housing 6501, a display portion 6502, a speaker 6503, and the like.
  • the television receiver 6500 can be made smaller.
  • the display portion 6202 includes a touch sensor and functions as a touch panel.
  • FIG. 19F shows an example of a car.
  • the automobile 7160 has an engine, tires, brakes, a steering device, a camera, and the like.
  • the automobile 7160 includes a display device according to one embodiment of the present invention therein. Further, the display device includes a touch sensor and functions as a touch panel.
  • FIG. 20A shows an example of a notebook personal computer.
  • the notebook personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • a display unit 7000 is incorporated into the housing 7211.
  • the display unit 7000 includes a touch sensor and functions as a touch panel.
  • FIGS. 20B and 20C An example of digital signage is shown in FIGS. 20B and 20C.
  • the digital signage 7300 shown in FIG. 20B includes a housing 7301, a display portion 7000, a speaker 7303, and the like. Furthermore, it can have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.
  • FIG. 20C shows a digital signage 7400 attached to a cylindrical pillar 7401.
  • Digital signage 7400 has a display section 7000 provided along the curved surface of pillar 7401.
  • a display unit 7000 includes a touch sensor and functions as a touch panel.
  • An electronic device 500 including a display device includes a display device including a region 501A, a region 501B, and a region 501C in a housing 502, as illustrated in FIG. 21A.
  • the region 501B and the region 501C are foldable display devices and can be housed in the casing 502 in a folded shape, so they can be provided at bent portions.
  • FIG. 21B is a sectional view taken along X1-X2 of the electronic device 500 shown in FIG. 21A.
  • a display device having a bent substrate 110 and a bent substrate 140 is housed in a housing 502.
  • the housing 502 includes a board 540 that is connected to a display device. The housing 502 protects the display device and the like from stress applied from the outside.
  • a region 501A, a region 501B, and a region 501C corresponding to the display portion can be arranged not only on a flat portion of the housing 502 but also on a bent portion. Moreover, the area 501A, the area 501B, and the area 501C are provided with touch sensors and function as touch panels.
  • An electronic device 500A including a display device according to one embodiment of the present invention includes a display device 501 housed in a bendable housing 502, as illustrated in FIG. 21C. Since the housing 502 and the display device 501 are both foldable display devices, they can be made into a foldable electronic device.
  • the electronic device 500A includes a substrate 110 and a substrate 140 provided along the housing 502.
  • the display device 501 can be provided regardless of the shape of the electronic device 500.
  • a deformable configuration can be achieved.
  • the structure, structure, method, etc. shown in this embodiment can be used in appropriate combination with the structure, structure, method, etc. shown in other embodiments.

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  • Electroluminescent Light Sources (AREA)
PCT/IB2023/057608 2022-08-10 2023-07-27 表示装置および電子機器 Ceased WO2024033738A1 (ja)

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US19/101,617 US12619326B2 (en) 2022-08-10 2023-07-27 Display device and electronic device

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JP2016149552A (ja) * 2015-02-11 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US20180364845A1 (en) * 2017-06-14 2018-12-20 Aconic Inc. Display device
US20190043927A1 (en) * 2017-08-04 2019-02-07 University-Industry Cooperation Group Of Kyung Hee University Touch sensor in-cell type organic electroluminescent device
CN110444125A (zh) * 2019-06-25 2019-11-12 华为技术有限公司 显示屏、终端
US20200006575A1 (en) * 2018-06-29 2020-01-02 Gilbert Dewey Thin film transistors having u-shaped features
JP2021077385A (ja) * 2014-10-17 2021-05-20 株式会社半導体エネルギー研究所 表示装置
US20210193754A1 (en) * 2019-12-20 2021-06-24 Lg Display Co., Ltd. Display device including see-through area for camera

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Publication number Priority date Publication date Assignee Title
US20150185942A1 (en) * 2013-12-26 2015-07-02 Lg Display Co., Ltd. Organic light emitting diode display device with touch screen and method of fabricating the same
JP2021077385A (ja) * 2014-10-17 2021-05-20 株式会社半導体エネルギー研究所 表示装置
JP2016149552A (ja) * 2015-02-11 2016-08-18 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US20180364845A1 (en) * 2017-06-14 2018-12-20 Aconic Inc. Display device
US20190043927A1 (en) * 2017-08-04 2019-02-07 University-Industry Cooperation Group Of Kyung Hee University Touch sensor in-cell type organic electroluminescent device
US20200006575A1 (en) * 2018-06-29 2020-01-02 Gilbert Dewey Thin film transistors having u-shaped features
CN110444125A (zh) * 2019-06-25 2019-11-12 华为技术有限公司 显示屏、终端
US20210193754A1 (en) * 2019-12-20 2021-06-24 Lg Display Co., Ltd. Display device including see-through area for camera

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