WO2024032440A1 - 声表面波谐振装置及其形成方法 - Google Patents

声表面波谐振装置及其形成方法 Download PDF

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Publication number
WO2024032440A1
WO2024032440A1 PCT/CN2023/110750 CN2023110750W WO2024032440A1 WO 2024032440 A1 WO2024032440 A1 WO 2024032440A1 CN 2023110750 W CN2023110750 W CN 2023110750W WO 2024032440 A1 WO2024032440 A1 WO 2024032440A1
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Prior art keywords
layer
area
acoustic wave
surface acoustic
metal layer
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PCT/CN2023/110750
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English (en)
French (fr)
Inventor
杨新宇
汤正杰
邹雅丽
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常州承芯半导体有限公司
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Publication of WO2024032440A1 publication Critical patent/WO2024032440A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/08—Holders with means for regulating temperature

Definitions

  • the present invention relates to the field of semiconductor technology. Specifically, the present invention relates to a surface acoustic wave resonance device and a forming method thereof.
  • Radio Frequency (RF) front-end chips for wireless communication equipment include power amplifiers, antenna switches, RF filters, multiplexers, and low-noise amplifiers.
  • RF filters include Piezoelectric Surface Acoustic Wave (SAW) filters, Piezoelectric Bulk Acoustic Wave (BAW) filters, Micro-Electro-Mechanical System (MEMS) filters, Integrated Passive Devices (IPD) filters, etc.
  • SAW Surface Acoustic Wave
  • BAW Piezoelectric Bulk Acoustic Wave
  • MEMS Micro-Electro-Mechanical System
  • IPD Integrated Passive Devices
  • the SAW resonator has a high quality factor (Q value).
  • the SAW resonator is used to make an RF filter with low insertion loss and high out-band rejection, that is, the SAW filter, which is currently used in mobile phones.
  • Mainstream RF filters used in wireless communication equipment such as base stations and base stations.
  • the SAW resonator has a negative temperature coefficient of frequency (Temperature Coefficient of Frequency, TCF), that is, when the temperature increases, the resonant frequency (resonant frequency) of the resonator decreases, and when the temperature decreases, the resonant frequency increases. Reduced reliability and stability of SAW filter.
  • TCF Thermal Coefficient of Frequency
  • a temperature compensation layer is added to the piezoelectric substrate.
  • the temperature compensation layer has a frequency temperature coefficient opposite to that of the piezoelectric substrate. The combination of the two makes the overall frequency temperature coefficient of the resonator tend to zero, improving the reliability and stability of the filter.
  • This contains a temperature compensation layer The SAW resonator is called a temperature-compensated SAW (Temperature Compensated SAW, TC-SAW) resonator, and the filter composed of the TC-SAW resonator is called a TC-SAW filter.
  • the problem solved by the present invention is to provide a surface acoustic wave resonance device and a forming method thereof, so as to improve the performance of the surface acoustic wave resonance device.
  • a surface acoustic wave resonance device which includes: a piezoelectric substrate; and an electrode structure located on the piezoelectric substrate.
  • the electrode structure includes first electrodes arranged in parallel along a first direction.
  • the first bus is connected to a number of first electrode strips arranged in parallel along the second direction
  • the second bus is connected to a number of second electrode strips arranged in parallel along the second direction
  • the The first direction is perpendicular to the second direction
  • the first electrode strips and the second electrode strips are staggered
  • the first electrode strips include a first part and a second part connected along the first direction
  • the second electrode strip includes a third part and a fourth part connected along the first direction, the second part and the third part overlap in the second direction
  • the second part and the third part are located in the overlapping area, the first part is located in the first spacing area, the fourth part is located in the second spacing area, and the third
  • the material density of the two parts is respectively greater than the material density of the first part and the fourth part, and the material density of the third part is greater than the material density of the first part and the fourth part respectively.
  • the first part and the fourth part are respectively a single-layer structure; the second part and the third part are respectively a single-layer structure or a multi-layer structure.
  • the material of the second part includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; Materials for three parts Includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • the material of the first part includes: aluminum or aluminum alloy; the material of the fourth part includes: aluminum or aluminum alloy.
  • the thickness of the second part is equal to the thickness of the first part and the fourth part respectively; the thickness of the third part is equal to the thickness of the first part and the fourth part respectively.
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively.
  • the second part and the third part when the second part and the third part have a multi-layer structure, respectively include: a first metal layer and a layer located on the first metal layer. a second metal layer, and the material density of the first metal layer is greater than the material density of the second metal layer.
  • the material of the second metal layer includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • the material of the second metal layer is the same as the material of the first part and the fourth part respectively.
  • the material of the first metal layer includes: aluminum or aluminum alloy.
  • the technical solution of the present invention also provides a method for forming a surface acoustic wave resonance device, which includes: providing a piezoelectric substrate; forming an electrode structure on the piezoelectric substrate, and the electrode structure includes parallel arrays along a first direction.
  • the first bus line is connected to a plurality of first electrode strips arranged in parallel along the second direction
  • the second bus line is connected to a plurality of second electrode strips arranged in parallel along the second direction.
  • the first direction is perpendicular to the second direction
  • the first electrode strips and the second electrode strips are staggered
  • the first electrode strips include first portions connected along the first direction and a second part
  • the second electrode strip includes a third part and a fourth part connected along the first direction
  • the second part and the third part overlap in the second direction
  • the third part There is a first spacing area, an overlapping area and a second spacing area arranged along the first direction between a bus and the second bus, and the overlapping area is located between the first spacing area and the third spacing area. between two spacers, the second part and the third part
  • the first part is located in the first separation area
  • the fourth part is located in the second separation area
  • the material density of the second part is respectively greater than that of the first part.
  • the material density of the fourth part, and the material density of the third part is greater than the material density of the first part and the fourth part respectively.
  • the first part and the fourth part are respectively a single-layer structure; the second part and the third part are respectively a single-layer structure or a multi-layer structure.
  • the method of forming the first part, the second part, the third part and the fourth part includes: A first photoresist layer is formed on the area and the second spacer area, and on part of the overlapping area; using the first photoresist layer as a mask, a first photoresist layer is formed on the overlapping area and the first A first electrode material layer is formed on the photoresist layer; the first photoresist layer and the first electrode material layer located on the first photoresist layer are removed using a first stripping process to form the second part and the third part; forming a second photoresist layer on the overlapping area, part of the first spacer area and part of the second spacer area, the second photoresist layer covering all The second part and the third part; using the second photoresist layer as a mask, form a second electrode on the first spacer area, the second spacer area and the second photoresist layer.
  • Material layer using a second stripping process to
  • the material of the second part includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium;
  • Part III materials include: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • the material of the first part includes: aluminum or aluminum alloy; the material of the fourth part includes: aluminum or aluminum alloy.
  • the thickness of the second part is equal to the thickness of the first part and the fourth part respectively; the thickness of the third part is equal to the thickness of the first part and the fourth part respectively.
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively.
  • the second part and the third part when the second part and the third part have a multi-layer structure, respectively include: a first metal layer and a layer located on the first metal layer. a second metal layer, and the material density of the first metal layer is greater than the material density of the second metal layer.
  • the method of forming the first part, the first metal layer, the second metal layer and the fourth part includes: forming a first electrode material on the first spacer region, the overlapping region and the second spacer region. layer; perform a first patterning process on the first electrode material layer to form the first metal layer; form a second electrode material layer on the first spacer region, the first metal layer and the second spacer region; Perform a second patterning process on the second electrode material layer to form the second metal layer, the first part and the fourth part.
  • the method of forming the first part, the first metal layer, the second metal layer and the fourth part includes: forming on the first spacer region and the second spacer region, and partially overlapping Form a first photoresist layer on the area; use the first photoresist layer as a mask to form a first electrode material layer on the overlapping area and the first photoresist layer; use first peeling The process removes the first photoresist layer and the first electrode material layer located on the first photoresist layer to form the first metal layer; in part of the first spacer area and part of the overlap A second photoresist layer is formed on the area and part of the second spacer area; using the second photoresist layer as a mask, a second photoresist layer is formed on the first spacer area, the overlapping area, the second spacer area and the A second electrode material layer is formed on the second photoresist layer; the second photoresist layer and the second electrode material layer located on the second photoresist layer are removed using a second stripping process to form
  • the material of the second metal layer includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • the material of the second metal layer is the same as the material of the first part and the fourth part respectively.
  • the material of the first metal layer includes: aluminum or aluminum alloy.
  • the material density of the second part is greater than the material density of the first part and the fourth part respectively
  • the material density of the third part is greater than the material density of the third part respectively.
  • the material density of the first part and the fourth part is used to reduce the wave speed of the overlapping area, thereby increasing the distance between the overlapping area and the first separation area and the second separation area respectively.
  • the difference in wave speed reduces energy leakage from the overlapping area to the first separation area and the second separation area when the resonant device is operating, so as to improve the performance of the resonant device.
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively.
  • the wave speed of the overlapping area can be further reduced, thereby increasing the wave speed difference between the overlapping area and the first separation area and the second separation area respectively, and reducing the energy transfer from the resonant device when the resonant device is working.
  • the overlap region leaks to the first spacer region and the second spacer region to enhance the performance of the resonant device.
  • the material density of the second part is respectively greater than the material density of the first part and the fourth part
  • the material density of the third part is respectively greater than
  • the material density of the first part and the fourth part is used to reduce the wave speed of the overlapping area, thereby increasing the relationship between the overlapping area and the first separation area and the second separation area respectively.
  • the difference in wave speed between the resonant device and the resonant device can reduce the leakage of energy from the overlapping area to the first separation area and the second separation area when the resonant device is working, so as to improve the performance of the resonant device.
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively.
  • the wave speed of the overlapping area can be further reduced, thereby increasing the wave speed difference between the overlapping area and the first separation area and the second separation area respectively, and reducing the energy transfer from the resonant device when the resonant device is working.
  • the overlap region leaks to the first spacer region and the second spacer region to enhance the performance of the resonant device.
  • Figures 1 and 2 are schematic structural diagrams of a surface acoustic wave resonance device
  • 3 to 12 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in an embodiment of the present invention.
  • FIG. 13 to 16 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in another embodiment of the present invention.
  • 17 to 24 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in yet another embodiment of the present invention.
  • Figure 25 is a schematic diagram comparing the impedance-frequency relationship between the surface acoustic wave resonator device in the embodiment of the present invention and the surface acoustic wave resonator device in the prior art.
  • Figures 1 and 2 are schematic structural diagrams of a surface acoustic wave resonance device.
  • Figure 2 is a schematic cross-sectional view along line AA in Figure 1.
  • the electrode structure 100 includes parallel rows along the first direction X.
  • the first bus 101 and the second bus 102 are arranged.
  • the first bus 101 connects a plurality of first electrode strips 103 arranged in parallel along the second direction Y.
  • the second bus 102 connects a plurality of first electrode strips 103 arranged in parallel along the second direction Y.
  • the second electrode strips 104 are arranged in parallel, the first direction X is perpendicular to the second direction Y, the first electrode strips 103 and the second electrode strips 104 are staggered, the first electrode strips 103
  • the second electrode strip 104 includes a first part 1031 and a second part 1032 connected along the first direction X, and the second electrode strip 104 includes a third part 1041 and a fourth part 1042 connected along the first direction X.
  • the second part 1032 and the third part 1041 overlap in the second direction Y, and there is a first spacing area arranged along the first direction X between the first bus 101 and the second bus 102 A1, overlapping area B1 and second spacing area A2, the overlapping area B1 is located between the first spacing area A1 and the second spacing area A2, the second part 1032 and the third part 1041 is located in the overlapping area B1, the first part 1031 is located in the first spacing area A1, the fourth part 1042 is located in the second spacing area A2, and the material of the second part 1032
  • the density is equal to the material density of the first part 1031 and the fourth part 1042 respectively, and the material density of the third part 1041 is equal to the material density of the first part 1031 and the fourth part 1042 respectively.
  • a temperature compensation layer located on the piezoelectric substrate 100, the temperature compensation layer covers the electrode structure, and the temperature compensation layer is connected to the piezoelectric substrate 100.
  • the electrical substrate 100 has opposite temperature frequency shift characteristics, which can reduce the frequency temperature coefficient (TemperatureCoefficient of Frequency, TCF), tending to 0ppm/°C, thereby improving the characteristics of the surface acoustic wave resonator device's operating frequency drifting with the operating temperature, and having Higher frequency-temperature stability.
  • TCF TempotureCoefficient of Frequency
  • a surface acoustic wave resonator device including a temperature compensation layer is called a temperature compensated surface acoustic wave resonator device (ie, TC-SAW resonator).
  • the wave speed in the overlapping area B1 is smaller than the The wave speeds on the first spacing area A1 and the second spacing area A2 are therefore used to make use of the wave speed differences between the overlapping area B1 and the first spacing area A1 and the second spacing area A2 respectively to change the main frequency of the resonant device.
  • the energy is bound in the overlapping area B1, forming a standing wave.
  • the material density of the second part 1032 is equal to the material density of the first part 1031 and the fourth part 1042 respectively
  • the material density of the third part 1041 is equal to the material density of the first part 1031 and the fourth part 1042 respectively.
  • the material density of the fourth part 1042 makes the difference in wave speed between the overlapping area B1 and the first separation area A1 and the second separation area A2 respectively small, and there will still be energy from all the components when the resonant device is operating.
  • the overlapping area B1 leaks to the first spacer area A1 and the second spacer area A2, thereby affecting the performance of the resonant device.
  • the present invention provides a surface acoustic wave resonance device and a forming method thereof.
  • the material density of the second part is greater than the material density of the first part and the fourth part respectively, and the third part
  • the material density of the first part and the fourth part is respectively greater than that of the first part and the fourth part, thereby reducing the wave speed of the overlapping area, thereby increasing the overlap between the overlapping area and the first separation area and the
  • the difference in wave speed between the second separation areas reduces energy leakage from the overlapping area to the first separation area and the second separation area when the resonant device is operating, thereby improving the performance of the resonant device.
  • FIG. 3 to 12 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in an embodiment of the present invention
  • FIG. 25 is an impedance diagram of a surface acoustic wave resonance device in an embodiment of the present invention and a surface acoustic wave resonance device in the prior art. - Frequency relationship comparison diagram.
  • a piezoelectric substrate 200 is provided.
  • the material of the piezoelectric substrate 200 includes: lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride, aluminum nitride alloy, gallium nitride or zinc oxide.
  • the piezoelectric substrate 200 is made of lithium niobate.
  • the method further includes: forming an electrode structure on the piezoelectric substrate 200, the electrode structure including a first bus line and a second bus line arranged in parallel along the first direction.
  • Bus the first bus connects a plurality of first electrode strips arranged in parallel along the second direction
  • the second bus connects a plurality of second electrode strips arranged in parallel along the second direction
  • the first direction and The second direction is vertical
  • the first electrode strips and the second electrode strips are staggered
  • the first electrode strips include a first part and a second part connected along the first direction
  • the second electrode strips are
  • the electrode strip includes a third part and a fourth part connected along the first direction, the second part and the third part overlap in the second direction
  • the first bus line and the second bus line There are a first spacing area, an overlapping area and a second spacing area arranged along the first direction, and the overlapping area is located between the first spacing area and the second spacing area.
  • the second part and the third part are located in the overlapping area, the first part is located in the first separation area, the fourth part is located in the second separation area, and the material of the second part
  • the density is greater than the material density of the first part and the fourth part respectively
  • the material density of the third part is greater than the material density of the first part and the fourth part respectively.
  • the first part and the fourth part have a single-layer structure respectively; the second part and the third part have a multi-layer structure respectively; the second part and the third part have a multi-layer structure respectively.
  • Each part includes: a first metal layer and a second metal layer located on the first metal layer, and the material density of the first metal layer is greater than the material density of the second metal layer.
  • Figure 5 is a schematic cross-sectional view along line A-A in Figure 4.
  • a first spacer is formed on the first spacer area A1 and the second spacer area A2, as well as part of the overlapping area B1.
  • Photoresist layer 201 is formed on the first spacer area A1 and the second spacer area A2, as well as part of the overlapping area B1.
  • first photoresist layer 201 is also located on the area where the first bus line and the second bus line are subsequently formed on the piezoelectric substrate 200 .
  • FIG. 6 Please refer to FIG. 6.
  • the view directions of FIG. 6 and FIG. 5 are the same.
  • a first photoresist layer 201 is formed on the overlapping area B1 and the first photoresist layer 201.
  • Electrode material layer 202 is formed on the overlapping area B1 and the first photoresist layer 201.
  • the material of the first electrode material layer 202 is molybdenum; in other embodiments, the material of the first electrode material layer can also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium. .
  • the formation process of the first electrode material layer 202 adopts a chemical vapor deposition process; in other embodiments, the formation process of the first electrode material layer 202 may also adopt a chemical physical deposition process.
  • a first stripping process is used to remove the first photoresist layer 201 and the first electrode material layer 202 located on the first photoresist layer 201 to form the first metal layer 203 .
  • the material of the first electrode material layer 202 is molybdenum and the first metal layer 203 is formed of the first electrode material layer 202
  • the material of the first metal layer 203 is also Molybdenum; in other embodiments, the material of the first metal layer may also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • a second photoresist layer 204 is formed on part of the first spacer area A1, part of the overlapping area B1, and part of the second spacer area A2.
  • the second photoresist layer 204 is not formed on the area where the first bus line and the second bus line are subsequently formed on the piezoelectric substrate 200 .
  • Second electrode material layer 205 is formed on the first spacer area A1 , the overlapping area B1 , the second spacer area A2 and the second photoresist layer 204 .
  • the material of the second electrode material layer 205 is aluminum; in other embodiments, the material of the second electrode material layer 205 can also be aluminum alloy.
  • the formation process of the second electrode material layer 205 adopts a chemical vapor deposition process; in other embodiments, the formation process of the second electrode material layer 205 may also adopt a chemical physical deposition process.
  • Figure 11 is a schematic cross-sectional view along line B-B in Figure 10.
  • a second stripping process is used to remove the second photoresist layer 204 and the second photoresist layer 204.
  • the electrode material layer 205 forms the second metal layer 206, the first part 207 and the fourth part 208.
  • the first part 207 and the fourth part 208 are formed simultaneously.
  • the electrode structure includes a first bus 209 and a second bus 210 arranged in parallel along the first direction An electrode strip 211.
  • the second bus 210 connects a plurality of second electrode strips 212 arranged in parallel along the second direction Y.
  • the first direction X is perpendicular to the second direction Y.
  • the first electrode The strips 211 and the second electrode strips 212 are staggered.
  • the first electrode strips 211 include a first part 207 and a second part 213 connected along the first direction X.
  • the second electrode strips 212 include a first part 207 and a second part 213 connected along the first direction
  • the third part 214 and the fourth part 208 are connected in the first direction X, the second part 213 and the third part 214 overlap in the second direction Y, the first bus 209 and the first bus 209
  • the overlapping area B1 is located between the first separation area A1 and the second separation area A2, the second part 213 and the third part 214 are located in the overlapping area B1,
  • the first part 207 is located in the first separation area A1
  • the fourth part 208 is located in the second separation area A2, and the material density of the second part 213 is greater than that of the first part 207 and the second separation area A2, respectively.
  • the material density of the fourth part 208 and the material density of the third part 214 are respectively greater than the material densities of the first part 207 and the fourth part 208.
  • the first part 207 and the fourth part 208 are each a single-layer structure; the second part 213 and the third part 214 are respectively a multi-layer structure; the second part 213 and the third part 214 respectively include: a first metal layer 203 and a second metal layer 206 located on the first metal layer 203, and the material density of the first metal layer 203 is greater than that of the second metal layer. Material density of 206.
  • the material of the second electrode material layer 205 is aluminum
  • the second metal layer 206, the first part 207 and the fourth part 208 are formed of the second electrode material layer 205, so the The material of the second metal layer 206, the first part 207 and the fourth part 208 is also aluminum; in other embodiments, the material of the second metal layer, the first part and the fourth part may also be aluminum alloy.
  • a lift-off process is used to form the first portion 207, the first metal layer 203, the second metal layer 206 and the fourth portion 208, which can effectively reduce etching damage to the piezoelectric substrate 200.
  • the material density of the second part 213 is greater than the material density of the first part 207 and the fourth part 208 respectively, the material density of the third part 214 is greater than that of the first part 214 .
  • the material density of the portion 207 and the fourth portion 208 is reduced to reduce the wave speed of the overlapping area, thereby increasing the overlap between the overlapping area B1 and the first separation area A1 and the second separation area A2 respectively.
  • the difference in wave speed between the two can reduce the energy leakage from the overlapping area B1 to the first separation area A1 and the second separation area A2 when the resonant device is working, so as to improve the performance of the resonant device.
  • the resonant device The Qs (electrical Q value) is significantly improved and the Qp (acoustic Q value) value is improved (as shown in Figure 25).
  • a temperature compensation layer 215 is formed on the piezoelectric substrate 200, and the temperature compensation layer 215 covers the electrode structure.
  • the temperature compensation layer 215 and the piezoelectric substrate 200 have opposite temperature frequency shift characteristics, which can reduce the TCF and tend to 0 ppm/°C, thus improving the surface acoustic wave resonance.
  • the operating frequency of the device drifts with the operating temperature, providing higher frequency-temperature stability.
  • the material of the temperature compensation layer 215 includes: silicon dioxide, silicon oxyfluoride or silicon oxycarbide.
  • the temperature compensation layer 215 is made of silicon dioxide.
  • 13 to 16 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in another embodiment of the present invention.
  • the method for forming the surface acoustic wave resonance device is continued to be described based on the above embodiment.
  • the difference from the above embodiment is that: the first part 207, the first metal layer 203, The second metal layer 206 and the fourth portion 208 are formed using a patterning process. This will be described in detail below with reference to the accompanying drawings.
  • a first electrode material layer 202 is formed on the first spacer area A1, the overlapping area B1 and the second spacer area A2.
  • the material of the first electrode material layer 202 is molybdenum; in other embodiments, the material of the first electrode material layer can also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium. .
  • the formation process of the first electrode material layer 202 adopts a chemical vapor deposition process; in other embodiments, the formation process of the first electrode material layer 202 may also adopt a physical vapor deposition process.
  • a first patterning process is performed on the first electrode material layer 202 to form the first metal layer 203 .
  • the etching process in the first patterning process adopts a dry etching process.
  • the material of the first electrode material layer 202 is molybdenum and the first metal layer 203 is formed of the first electrode material layer 202
  • the material of the first metal layer 203 is also Molybdenum; in other embodiments, the material of the first metal layer may also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • a second electrode material layer 205 is formed on the first spacer area A1, the first metal layer 203 and the second spacer area A2.
  • the material of the second electrode material layer 205 is aluminum; in other embodiments, the material of the second electrode material layer 205 can also be aluminum alloy.
  • the formation process of the second electrode material layer 205 adopts a chemical vapor deposition process; in other embodiments, the formation process of the second electrode material layer 205 may also adopt a chemical physical deposition process.
  • Figure 16 is a schematic cross-sectional view along line B-B in Figure 10.
  • the second electrode material layer 205 is subjected to a second patterning process to form the second metal layer 206, the first Part 207 and Part IV 208.
  • the first part 207 and the fourth part 208 are formed simultaneously.
  • the etching process in the second patterning process adopts a dry etching process.
  • the material of the second electrode material layer 205 is aluminum
  • the second metal layer 206, the first part 207 and the fourth part 208 are formed of the second electrode material layer 205, so the The material of the second metal layer 206, the first part 207 and the fourth part 208 is also aluminum; in other embodiments, the material of the second metal layer, the first part and the fourth part may also be aluminum alloy.
  • 17 to 24 are structural schematic diagrams of each step of a method for forming a surface acoustic wave resonance device in an embodiment of the present invention.
  • the method for forming the surface acoustic wave resonance device is continued to be described on the basis of the above embodiment.
  • the difference from the above embodiment is that: the first part 207, the second part 213, the third part
  • the third part 214 and the fourth part 208 are both single-layer structures. This will be described in detail below with reference to the accompanying drawings.
  • a first photoresist layer 201 is formed on the first spacer area A1 and the second spacer area A2, and on part of the overlapping area B1. .
  • first photoresist layer 201 is also located on the area where the first bus line 209 and the second bus line 210 are subsequently formed on the piezoelectric substrate 200 .
  • a first electrode material layer 202 is formed on the overlapping area B1 and the first photoresist layer 201 .
  • the material of the first electrode material layer 202 is molybdenum; in other embodiments, the material of the first electrode material layer can also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium. .
  • the formation process of the first electrode material layer 202 adopts a chemical vapor deposition process; in other embodiments, the formation process of the first electrode material layer 202 may also adopt a chemical physical deposition process.
  • Figure 20 is a schematic cross-sectional view along line C-C in Figure 19.
  • the first stripping process is used to remove the first photoresist layer 201 and the first photoresist layer 201 located on the first photoresist layer 201.
  • the electrode material layer 202 forms the second part 213 and the third part 214.
  • the second part 213 and the third part 214 are formed of the first electrode material 202 layer, so the second part 213 and the third part 214 are also made of molybdenum; in other embodiments, the material of the second part and the third part 214 may also be ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • a second photoresist layer 204 is formed on part of the second spacer area A2, and the second photoresist layer 204 covers the second part 213 and the third part 214.
  • the second photoresist layer 207 is not formed on the area where the first bus line 209 and the second bus line 210 are subsequently formed on the piezoelectric substrate 200 .
  • a second electrode material layer is formed on the first spacer area A1, the second spacer area A2 and the second photoresist layer 204. 205.
  • the material of the second electrode material layer 205 is aluminum; in other embodiments, the material of the second electrode material layer 205 can also be aluminum alloy.
  • the formation process of the second electrode material layer 205 adopts a chemical vapor deposition process; in other embodiments, the formation process of the second electrode material layer 205 may also adopt a chemical physical deposition process.
  • Figure 24 is a schematic cross-sectional view along line D-D in Figure 23.
  • the second stripping process is used to remove the second photoresist layer 204 and the second photoresist layer 204 located on the second photoresist layer.
  • the electrode material layer 205 forms the first part 207 and the fourth part 208.
  • the first bus 209 and the second bus 210 are formed simultaneously.
  • the first part 207 and the fourth part 208 are formed of the second electrode material layer 205, so the first part 207 and the fourth part 208 are also made of aluminum; in other embodiments, the first part and the fourth part may also be made of aluminum alloy.
  • a lift-off process is used to form the first part 207, the second part 213, the third part 214 and the fourth part 208, which can effectively reduce etching damage to the piezoelectric substrate.
  • the thickness of the second part 213 is equal to the thickness of the first part 207 respectively. and the thickness of the fourth part 208; the thickness of the third part 214 is equal to the thickness of the first part 207 and the fourth part 208 respectively.
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively. thickness.
  • the wave speed of the overlapping area can be further reduced, thereby increasing the wave speed difference between the overlapping area and the first separation area and the second separation area respectively, and reducing the energy transfer from the resonant device when the resonant device is working.
  • the overlap region leaks to the first spacer region and the second spacer region to enhance the performance of the resonant device.
  • embodiments of the present invention also provide a surface acoustic wave resonance device, including: a piezoelectric substrate 200; an electrode structure located on the piezoelectric substrate 200, the electrode structure includes parallel rows along the first direction
  • the first bus 209 and the second bus 210 are arranged.
  • the first bus 209 connects a plurality of first electrode strips 211 arranged in parallel along the second direction Y.
  • the second bus 210 connects a plurality of first electrode strips 211 arranged in parallel along the second direction Y.
  • the second electrode strips 212 are arranged in parallel, the first direction X is perpendicular to the second direction Y, the first electrode strips 211 and the second electrode strips 212 are staggered, the first electrode strips 211
  • the second electrode strip 212 includes a first part 207 and a second part 213 connected along the first direction X, and the second electrode strip 212 includes a third part 214 and a fourth part 208 connected along the first direction X.
  • the second part 213 and the third part 214 overlap in the second direction Y, and there is a first spacing area arranged along the first direction X between the first bus 209 and the second bus 210 A1, overlapping area B1 and second spacing area A2, the overlapping area B1 is located between the first spacing area A1 and the second spacing area A2, the second part 213 and the third part 214 is located in the overlapping area B1, the first part 207 is located in the first separation area A1, the fourth part 208 is located in the second separation area A2, and the material density of the second part 213 is respectively Greater than the material density of the first part 207 and the fourth part 208, the material density of the third part 214 is greater than the material density of the first part 207 and the fourth part 208 respectively.
  • the material density of the second part 213 is greater than the material density of the first part 207 and the fourth part 208 respectively
  • the material density of the third part 214 is greater than the material density of the third part 214 respectively.
  • the material density of one part 207 and the fourth part 208 is used to reduce the wave speed of the overlapping area, thereby increasing the overlap between the overlapping area B1 and the first separation area A1 and the second separation area respectively.
  • the difference in wave speed between A2 reduces the energy leakage from the overlapping area B1 to the first separation area A1 and the second separation area A2 when the resonant device is working, so as to improve the performance of the resonant device, which is specifically manifested as resonance.
  • the Qs (electrical Q value) of the device is significantly improved and the Qp (acoustic Q value) value is improved (as shown in Figure 25).
  • first part 207 and the fourth part 208 are each a single-layer structure; the second part 213 and the third part 214 are each a single-layer structure. structure.
  • the material of the second part 213 includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium; Materials for portion 214 include molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium, or scandium.
  • the material of the first part 207 includes: aluminum or aluminum alloy; the material of the fourth part 208 includes: aluminum or aluminum alloy.
  • the thickness of the second part 213 is equal to the thickness of the first part 207 and the fourth part 208 respectively; the thickness of the third part 214 is respectively Equal to the thickness of the first part 207 and the fourth part 208 .
  • the thickness of the second part is greater than the thickness of the first part and the fourth part respectively; the thickness of the third part is greater than the thickness of the first part and the fourth part respectively. thickness.
  • first part 207 and the fourth part 208 are each a single-layer structure; the second part 213 and the third part 214 are each a multi-layer structure. structure.
  • the second part 213 and the third part 214 are multi-layer structures
  • the second part 213 and the third part 214 respectively include: a first metal layer 203 and a second metal layer 206 located on the first metal layer 203, and the material density of the first metal layer 203 is greater than the material density of the second metal layer 206.
  • the material of the second metal layer 203 includes: molybdenum, ruthenium, tungsten, platinum, copper, chromium, magnesium or scandium.
  • the second metal layer 206 is made of the same material as the first part 207 and the fourth part 208 respectively.
  • the material of the first metal layer 206 includes: aluminum or aluminum alloy.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种声表面波谐振装置及其形成方法，涉及半导体技术领域，其中声表面波谐振装置包括：压电基底；位于压电基底上的电极结构，电极结构包括第一总线和第二总线，第一总线连接第一电极条，第二总线连接第二电极条，第一电极条包括第一部和第二部，第二电极条包括第三部和第四部，第一总线和第二总线之间具有第一间隔区、交叠区和第二间隔区，第二部和第三部位于交叠区，第一部位于第一间隔区，第四部位于第二间隔区，第二部和第三部分别大于第一部和第四部的材料密度，以此降低交叠区的波速，进而增大交叠区分别与第一间隔区和第二间隔区之间的波速差，减少谐振装置在工作时能量从交叠区向第一间隔区和第二间隔区泄漏，以提升谐振装置的性能。

Description

声表面波谐振装置及其形成方法
本申请要求2022年8月12日提交中国专利局、申请号为202210964607.6、发明名称为“声表面波谐振装置及其形成方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及半导体技术领域，具体而言，本发明涉及一种声表面波谐振装置及其形成方法。
背景技术
无线通信设备的射频(Radio Frequency，RF)前端芯片包括功率放大器、天线开关、射频滤波器、多工器和低噪声放大器等。其中，射频滤波器包括压电声表面波(SurfaceAcoustic Wave，SAW)滤波器、压电体声波(Bulk Acoustic Wave，BAW)滤波器、微机电系统(Micro-Electro-Mechanical System，MEMS)滤波器、集成无源装置(Integrated PassiveDevices，IPD)滤波器等。
SAW谐振器的品质因数(Q值)较高，由SAW谐振器制作成低插入损耗(insertion loss)、高带外抑制(out-band rejection)的RF滤波器，即SAW滤波器，是目前手机、基站等无线通信设备使用的主流RF滤波器。SAW谐振器具有负的频率温度系数(Temperature Coefficient of Frequency，TCF)，即温度升高时，谐振器的谐振频率(resonant frequency)降低，温度降低时，谐振频率升高。降低了SAW滤波器的可靠性和稳定性。为了改善SAW谐振器的谐振频率随工作温度漂移的特性，会在压电基底上增加温度补偿层，温度补偿层具有于压电基底相反的频率温度系数。两者结合使谐振器整体的频率温度系数趋向于零，提高滤波器的可靠性和稳定性。这种包含温度补偿层 的SAW谐振器称为温度补偿SAW(Temperature Compensated SAW，TC-SAW)谐振器，由TC-SAW谐振器组成的滤波器称为TC-SAW滤波器。
然而，现有技术中形成的声表面波谐振装置仍存在诸多问题。
发明内容
本发明解决的问题是提供一种声表面波谐振装置及其形成方法，以提升声表面波谐振装置的性能。
为解决上述问题，本发明技术方案提供一种声表面波谐振装置，包括：压电基底；位于所述压电基底上的电极结构，所述电极结构包括沿第一方向平行排布的第一总线和第二总线，所述第一总线连接若干沿第二方向平行排布的第一电极条，所述第二总线连接若干沿所述第二方向平行排布的第二电极条，所述第一方向与所述第二方向垂直，所述第一电极条和所述第二电极条交错放置，所述第一电极条包括沿所述第一方向连接的第一部和第二部，所述第二电极条包括沿所述第一方向连接的第三部和第四部，所述第二部和所述第三部在所述第二方向上重叠，所述第一总线和所述第二总线之间具有沿所述第一方向排布的第一间隔区、交叠区和第二间隔区，所述交叠区位于所述第一间隔区和所述第二间隔区之间，所述第二部和所述第三部位于所述交叠区，所述第一部位于所述第一间隔区，所述第四部位于所述第二间隔区，且所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度。
可选的，所述第一部和所述第四部分别为单层结构；所述第二部和所述第三部分别为单层结构或多层结构。
可选的，当所述第二部和所述第三部为单层结构时，所述第二部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪；所述第三部的材料 包括：钼、钌、钨、铂、铜、铬、镁或钪。
可选的，所述第一部的材料包括：铝或铝合金；所述第四部的材料包括：铝或铝合金。
可选的，所述第二部的厚度分别等于所述第一部和所述第四部的厚度；所述第三部的厚度分别等于所述第一部和所述第四部的厚度。
可选的，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。
可选的，当所述第二部和所述第三部为多层结构时，所述第二部和所述第三部分别包括：第一金属层以及位于所述第一金属层上的第二金属层，且所述第一金属层的材料密度大于所述第二金属层的材料密度。
可选的，所述第二金属层的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
可选的，所述第二金属层的材料分别与所述第一部和所述第四部的材料相同。
可选的，所述第一金属层的材料包括：铝或铝合金。
相应的，本发明技术方案中还提供一种声表面波谐振装置的形成方法，包括：提供压电基底；在所述压电基底上形成电极结构，所述电极结构包括沿第一方向平行排布的第一总线和第二总线，所述第一总线连接若干沿第二方向平行排布的第一电极条，所述第二总线连接若干沿所述第二方向平行排布的第二电极条，所述第一方向与所述第二方向垂直，所述第一电极条和所述第二电极条交错放置，所述第一电极条包括沿所述第一方向连接的第一部和第二部，所述第二电极条包括沿所述第一方向连接的第三部和第四部，所述第二部和所述第三部在所述第二方向上重叠，所述第一总线和所述第二总线之间具有沿所述第一方向排布的第一间隔区、交叠区和第二间隔区，所述交叠区位于所述第一间隔区和所述第二间隔区之间，所述第二部和所述第三 部位于所述交叠区，所述第一部位于所述第一间隔区，所述第四部位于所述第二间隔区，且所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度。
可选的，所述第一部和所述第四部分别为单层结构；所述第二部和所述第三部分别为单层结构或多层结构。
可选的，当所述第二部和所述第三部为单层结构时，所述第一部、第二部、第三部以及第四部的形成方法包括：在所述第一间隔区和所述第二间隔区上、以及部分所述交叠区上形成第一光刻胶层；以所述第一光刻胶层为掩膜，在所述交叠区和所述第一光刻胶层上形成第一电极材料层；采用第一剥离工艺去除所述第一光刻胶层以及位于所述第一光刻胶层上的第一电极材料层，形成所述第二部和所述第三部；在所述交叠区上、部分所述第一间隔区上以及部分所述第二间隔区上形成第二光刻胶层，所述第二光刻胶层覆盖所述第二部和所述第三部；以所述第二光刻胶层为掩膜，在所述第一间隔区、第二间隔区以及所述第二光刻胶层上形成第二电极材料层；采用第二剥离工艺去除所述第二光刻胶层以及位于所述第二光刻胶层上的第二电极材料层，形成所述第一部和所述第四部。
可选的，当所述第二部和所述第三部为单层结构时，所述第二部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪；所述第三部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
可选的，所述第一部的材料包括：铝或铝合金；所述第四部的材料包括：铝或铝合金。
可选的，所述第二部的厚度分别等于所述第一部和所述第四部的厚度；所述第三部的厚度分别等于所述第一部和所述第四部的厚度。
可选的，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。
可选的，当所述第二部和所述第三部为多层结构时，所述第二部和所述第三部分别包括：第一金属层以及位于所述第一金属层上的第二金属层，且所述第一金属层的材料密度大于所述第二金属层的材料密度。
可选的，所述第一部、第一金属层、第二金属层以及第四部的形成方法包括：在所述第一间隔区、交叠区以及第二间隔区上形成第一电极材料层；对所述第一电极材料层进行第一图形化处理，形成所述第一金属层；在所述第一间隔区、第一金属层以及第二间隔区上形成第二电极材料层；对所述第二电极材料层进行第二图形化处理，形成所述第二金属层、第一部和第四部。
可选的，所述第一部、第一金属层、第二金属层以及第四部的形成方法包括：在所述第一间隔区和所述第二间隔区上、以及部分所述交叠区上形成第一光刻胶层；以所述第一光刻胶层为掩膜，在所述交叠区和所述第一光刻胶层上形成第一电极材料层；采用第一剥离工艺去除所述第一光刻胶层以及位于所述第一光刻胶层上的第一电极材料层，形成所述第一金属层；在部分所述第一间隔区、部分所述交叠区以及部分所述第二间隔区上形成第二光刻胶层；以所述第二光刻胶层为掩膜，在所述第一间隔区、交叠区、第二间隔区以及所述第二光刻胶层上形成第二电极材料层；采用第二剥离工艺去除所述第二光刻胶层以及位于所述第二光刻胶层上的第二电极材料层，形成所述第二金属层、第一部以及第四部。
可选的，所述第二金属层的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
可选的，所述第二金属层的材料分别与所述第一部和所述第四部的材料相同。
可选的，所述第一金属层的材料包括：铝或铝合金。
与现有技术相比，本发明的技术方案具有以下优点：
在本发明技术方案的声表面波谐振装置中，所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度，以此降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
进一步，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。能够进一步降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
在本发明技术方案的声表面波谐振装置形成方法中，所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度，以此降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
进一步，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。能够进一步降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
附图说明
图1和图2是一种声表面波谐振装置的结构示意图；
图3至图12是本发明实施例中声表面波谐振装置的形成方法各步骤的结构示意图；
图13至图16是本发明另一实施例中声表面波谐振装置的形成方法各步骤的结构示意图；
图17至图24是本发明又一实施例中声表面波谐振装置的形成方法各步骤的结构示意图；
图25是本发明实施例中声表面波谐振装置与现有技术的声表面波谐振装置的阻抗-频率关系对比示意图。
具体实施方式
正如背景技术所述，现有技术中形成的声表面波谐振装置仍存在诸多问题。以下将结合附图进行具体说明。
图1和图2是一种声表面波谐振装置的结构示意图。
请参考图1和图2，图2是图1中沿A-A线截面示意图，压电基底100；位于所述压电基底100上的电极结构，所述电极结构100包括沿第一方向X平行排布的第一总线101和第二总线102，所述第一总线101连接若干沿第二方向Y平行排布的第一电极条103，所述第二总线102连接若干沿所述第二方向Y平行排布的第二电极条104，所述第一方向X与所述第二方向Y垂直，所述第一电极条103和所述第二电极条104交错放置，所述第一电极条103包括沿所述第一方向X连接的第一部1031和第二部1032，所述第二电极条104包括沿所述第一方向X连接的第三部1041和第四部1042，所述第二部1032和所述第三部1041在所述第二方向Y上重叠，所述第一总线101和所述第二总线102之间具有沿所述第一方向X排布的第一间隔区A1、交叠区B1和第二间隔区A2，所述交叠区B1位于所述第一间隔区A1和所述第二间隔区A2之间，所述第二部1032和所述第三部1041位于所述交叠区B1，所述第一部1031位于所述第一间隔区A1，所述第四部1042位于所述第二间隔区A2，且所述第二部1032的材料 密度分别等于所述第一部1031和所述第四部1042的材料密度，所述第三部1041的材料密度分别等于所述第一部1031和所述第四部1042的材料密度。
需要说明的是，在本实施例中，还包括：位于所述压电基底100上的温度补偿层(未图示)，所述温度补偿层覆盖所述电极结构，所述温度补偿层与压电基底100具有相反的温度频移特性，可以减小频率温度系数(TemperatureCoefficient of Frequency，TCF)，趋向于0ppm/℃，从而改善了声表面波谐振装置工作频率随工作温度漂移的特性，具备了更高的频率-温度稳定性。包括温度补偿层的声表面波谐振装置称为温度补偿声表面波谐振装置(即，TC-SAW谐振器)。
在本实施例中，由于所述交叠区B1上的所述第一电极条103和所述第二电极条104的排布密度较大，因此所述交叠区B1上的波速小于所述第一间隔区A1和所述第二间隔区A2上的波速，因此利用所述交叠区B1分别与所述第一间隔区A1和第二间隔区A2的波速差，将谐振装置的主频能量束缚在所述交叠区B1，形成驻波。
然而，由于所述第二部1032的材料密度分别等于所述第一部1031和所述第四部1042的材料密度，所述第三部1041的材料密度分别等于所述第一部1031和所述第四部1042的材料密度，使得所述交叠区B1分别与所述第一间隔区A1和所述第二间隔区A2的波速差较小，在谐振装置工作时候仍然会有能量从所述交叠区B1向第一间隔区A1和所述第二间隔区A2泄漏，进而影响谐振装置的性能。
在此基础上，本发明提供一种声表面波谐振装置及其形成方法，所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度，以此降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
在下面的描述中阐述了很多具体细节以便于充分理解本发明，但是本发明还可以采用其他不同于在此描述的其它方式来实施，因此本发明不受下面公开的具体实施例的限制。
图3至图12是本发明实施例中声表面波谐振装置的形成方法各步骤的结构示意图；图25是本发明实施例中声表面波谐振装置与现有技术的声表面波谐振装置的阻抗-频率关系对比示意图。
请参考图3，提供压电基底200。
所述压电基底200的材料包括：钽酸锂、铌酸锂、锆钛酸铅、铌镁酸铅—钛酸铅、氮化铝、氮化铝合金、氮化镓或氧化锌。在本实施例中，所述压电基底200的材料采用铌酸锂。
在本实施例中，在提供所述压电基底200之后，还包括：在所述压电基底200上形成电极结构，所述电极结构包括沿第一方向平行排布的第一总线和第二总线，所述第一总线连接若干沿第二方向平行排布的第一电极条，所述第二总线连接若干沿所述第二方向平行排布的第二电极条，所述第一方向与所述第二方向垂直，所述第一电极条和所述第二电极条交错放置，所述第一电极条包括沿所述第一方向连接的第一部和第二部，所述第二电极条包括沿所述第一方向连接的第三部和第四部，所述第二部和所述第三部在所述第二方向上重叠，所述第一总线和所述第二总线之间具有沿所述第一方向排布的第一间隔区、交叠区和第二间隔区，所述交叠区位于所述第一间隔区和所述第二间隔区之间，所述第二部和所述第三部位于所述交叠区，所述第一部位于所述第一间隔区，所述第四部位于所述第二间隔区，且所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度。具体形成过程请参考图4至图12。
在本实施例中，所述第一部和所述第四部分别为单层结构；所述第二部和所述第三部分别为多层结构；所述第二部和所述第三部分别包括：第一金属层以及位于所述第一金属层上的第二金属层，且所述第一金属层的材料密度大于所述第二金属层的材料密度。
请参考图4和图5，图5是图4中沿A-A线截面示意图，在所述第一间隔区A1和所述第二间隔区A2上、以及部分所述交叠区B1上形成第一光刻胶层201。
需要说明的是，所述第一光刻胶层201还位于后续在所述压电基底200上形成所述第一总线和所述第二总线的区域上。
请参考图6，图6和图5的视图方向一致，以所述第一光刻胶层201为掩膜，在所述交叠区B1和所述第一光刻胶层201上形成第一电极材料层202。
在本实施例中，所述第一电极材料层202的材料采用钼；在其他实施例中，所述第一电极材料层的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
在本实施例中，所述第一电极材料层202的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第一电极材料层的形成工艺还可以采用化学物理沉积工艺。
请参考图7，采用第一剥离工艺去除所述第一光刻胶层201以及位于所述第一光刻胶层201上的第一电极材料层202，形成所述第一金属层203。
在本实施例中，由于所述第一电极材料层202的材料采用钼，所述第一金属层203由所述第一电极材料层202形成，因此所述第一金属层203的材料也为钼；在其他实施例中，所述第一金属层的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
请参考图8，在部分所述第一间隔区A1、部分所述交叠区B1以及部分所述第二间隔区A2上形成第二光刻胶层204。
需要说明的是，后续在所述压电基底200上形成所述第一总线和所述第二总线的区域上未形成所述第二光刻胶层204。
请参考图9，以所述第二光刻胶层204为掩膜，在所述第一间隔区A1、交叠区B1、第二间隔区A2以及所述第二光刻胶层204上形成第二电极材料层205。
在本实施例中，所述第二电极材料层205的材料采用铝；在其他实施例中，所述第二电极材料层的材料还可以采用铝合金。
在本实施例中，所述第二电极材料层205的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第二电极材料层的形成工艺还可以采用化学物理沉积工艺。
请参考图10和图11，图11是图10中沿B-B线截面示意图，采用第二剥离工艺去除所述第二光刻胶层204以及位于所述第二光刻胶层204上的第二电极材料层205，形成所述第二金属层206、第一部207以及第四部208。
需要说明的是，在本实施例中，形成所述第二金属层206、第一部207以及第四部208的过程中，同时形成所述第一总线209和所述第二总线210。
至此，所述电极结构形成，所述电极结构包括沿第一方向X平行排布的第一总线209和第二总线210，所述第一总线209连接若干沿第二方向Y平行排布的第一电极条211，所述第二总线210连接若干沿所述第二方向Y平行排布的第二电极条212，所述第一方向X与所述第二方向Y垂直，所述第一电极条211和所述第二电极条212交错放置，所述第一电极条211包括沿所述第一方向X连接的第一部207和第二部213，所述第二电极条212包括沿所述第一方向X连接的第三部214和第四部208，所述第二部213和所述第三部214在所述第二方向Y上重叠，所述第一总线209和所述第二总线210之间具有沿所述第一方向X排布的第一间隔区A1、交叠区B1和第二间 隔区A2，所述交叠区B1位于所述第一间隔区A1和所述第二间隔区A2之间，所述第二部213和所述第三部214位于所述交叠区B1，所述第一部207位于所述第一间隔区A1，所述第四部208位于所述第二间隔区A2，且所述第二部213的材料密度分别大于所述第一部207和所述第四部208的材料密度，所述第三部214的材料密度分别大于所述第一部207和所述第四部208的材料密度。
在本实施例中，所述第一部207和所述第四部208分别为单层结构；所述第二部213和所述第三部214分别为多层结构；所述第二部213和所述第三部214分别包括：第一金属层203以及位于所述第一金属层203上的第二金属层206，且所述第一金属层203的材料密度大于所述第二金属层206的材料密度。
在本实施例中，由于所述第二电极材料层205的材料采用铝，所述第二金属层206、第一部207以及第四部208由所述第二电极材料层205形成，因此所述第二金属层206、第一部207以及第四部208的材料也为铝；在其他实施例中，所述第二金属层、第一部以及第四部的材料还可以采用铝合金。
在本实施例中，采用剥离工艺形成所述第一部207、第一金属层203、第二金属层206以及第四部208，能够有效降低对所述压电基底200的刻蚀损伤。
在本实施例中，由于所述第二部213的材料密度分别大于所述第一部207和所述第四部208的材料密度，所述第三部214的材料密度分别大于所述第一部207和所述第四部208的材料密度，以此降低所述交叠区的波速，进而增大所述交叠区B1分别与所述第一间隔区A1和所述第二间隔区A2之间的波速差，减少谐振装置在工作时能量从所述交叠区B1向所述第一间隔区A1和所述第二间隔区A2泄漏，以提升谐振装置的性能，具体表现为谐振装置的Qs(电学Q值)显著提升和Qp(声学Q值)值提升(如图25所示)。
请参考图12，图12和图11的视图方向一致，在形成所述电极 结构之后，在所述压电基底200上形成温度补偿层215，所述温度补偿层215覆盖所述电极结构。
需要说明的是，在本实施例中，所述温度补偿层215与所述压电基底200具有相反的温度频移特性，可以减小TCF，趋向于0ppm/℃，从而改善了声表面波谐振装置工作频率随工作温度漂移的特性，具备了更高的频率-温度稳定性。
所述温度补偿层215的材料包括：二氧化硅、氟氧化硅或碳氧化硅。在本实施例中，所述温度补偿层215的材料采用二氧化硅。
图13至图16是本发明另一实施例中声表面波谐振装置的形成方法各步骤的结构示意图。
本实施例中是在上述实施例中的基础上对声表面波谐振装置的形成方法继续进行说明，与上述实施例中的不同之处在于：所述第一部207、第一金属层203、第二金属层206以及第四部208采用图形化工艺形成。以下将结合附图对其进行具体说明。
请参考图13，图13和图5的视图方向一致，在所述第一间隔区A1、交叠区B1以及第二间隔区A2上形成第一电极材料层202。
在本实施例中，所述第一电极材料层202的材料采用钼；在其他实施例中，所述第一电极材料层的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
在本实施例中，所述第一电极材料层202的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第一电极材料层的形成工艺还可以采用物理气相沉积工艺。
请参考图14，对所述第一电极材料层202进行第一图形化处理，形成所述第一金属层203。
在本实施例中，所述第一图形化处理中的刻蚀工艺采用干法刻蚀工艺。
在本实施例中，由于所述第一电极材料层202的材料采用钼，所述第一金属层203由所述第一电极材料层202形成，因此所述第一金属层203的材料也为钼；在其他实施例中，所述第一金属层的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
请参考图15，在所述第一间隔区A1、第一金属层203以及第二间隔区A2上形成第二电极材料层205。
在本实施例中，所述第二电极材料层205的材料采用铝；在其他实施例中，所述第二电极材料层的材料还可以采用铝合金。
在本实施例中，所述第二电极材料层205的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第二电极材料层的形成工艺还可以采用化学物理沉积工艺。
请参考图16并继续结合参考图10，图16是图10中沿B-B线截面示意图，对所述第二电极材料层205进行第二图形化处理，形成所述第二金属层206、第一部207和第四部208。
需要说明的是，在本实施例中，形成所述第二金属层206、第一部207以及第四部208的过程中，同时形成所述第一总线209和所述第二总线210。
在本实施例中，所述第二图形化处理中的刻蚀工艺采用干法刻蚀工艺。
在本实施例中，由于所述第二电极材料层205的材料采用铝，所述第二金属层206、第一部207以及第四部208由所述第二电极材料层205形成，因此所述第二金属层206、第一部207以及第四部208的材料也为铝；在其他实施例中，所述第二金属层、第一部以及第四部的材料还可以采用铝合金。
图17至图24是本发明实施例中一种声表面波谐振装置的形成方法各步骤的结构示意图。
本实施例中是在上述实施例中的基础上对声表面波谐振装置的形成方法继续进行说明，与上述实施例中的不同之处在于：所述第一部207、第二部213、第三部214以及第四部208均为单层结构。以下将结合附图对其进行具体说明。
请参考图17，图17和图5的视图方向一致，在所述第一间隔区A1和所述第二间隔区A2上、以及部分所述交叠区B1上形成第一光刻胶层201。
需要说明的是，所述第一光刻胶层201还位于后续在所述压电基底200上形成所述第一总线209和所述第二总线210的区域上。
请参考图18，以所述第一光刻胶层201为掩膜，在所述交叠区B1和所述第一光刻胶层201上形成第一电极材料层202。
在本实施例中，所述第一电极材料层202的材料采用钼；在其他实施例中，所述第一电极材料层的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
在本实施例中，所述第一电极材料层202的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第一电极材料层的形成工艺还可以采用化学物理沉积工艺。
请参考图19和图20，图20是图19中沿C-C线截面示意图，采用第一剥离工艺去除所述第一光刻胶层201以及位于所述第一光刻胶层201上的第一电极材料层202，形成所述第二部213和所述第三部214。
在本实施例中，由于所述第一电极材料层202的材料采用钼，所述第二部213和所述第三部214由所述第一电极材料202层形成，因此所述第二部213和所述第三部214的材料也为钼；在其他实施例中，所述第二部和所述第三部的材料还可以采用钌、钨、铂、铜、铬、镁或钪。
请参考图21，在所述交叠区B1上、部分所述第一间隔区A1上 以及部分所述第二间隔区A2上形成第二光刻胶层204，所述第二光刻胶层204覆盖所述第二部213和所述第三部214。
需要说明的是，后续在所述压电基底200上形成所述第一总线209和所述第二总线210的区域上未形成所述第二光刻胶层207。
请参考图22，以所述第二光刻胶层204为掩膜，在所述第一间隔区A1、第二间隔区A2以及所述第二光刻胶层204上形成第二电极材料层205。
在本实施例中，所述第二电极材料层205的材料采用铝；在其他实施例中，所述第二电极材料层的材料还可以采用铝合金。
在本实施例中，所述第二电极材料层205的形成工艺采用化学气相沉积工艺；在其他实施例中，所述第二电极材料层的形成工艺还可以采用化学物理沉积工艺。
请参考图23和图24，图24是图23中沿D-D线截面示意图，采用第二剥离工艺去除所述第二光刻胶层204以及位于所述第二光刻胶层上204的第二电极材料层205，形成所述第一部207和所述第四部208。
需要说明的是，在本实施例中，形成所述第一部207以及所述第四部208的过程中，同时形成所述第一总线209和所述第二总线210。
在本实施例中，由于所述第二电极材料层205的材料采用铝，所述第一部207以及所述第四部208由所述第二电极材料层205形成，因此所述第一部207以及所述第四部208的材料也为铝；在其他实施例中，所述第一部以及所述第四部的材料还可以采用铝合金。
在本实施例中，采用剥离工艺形成所述第一部207、第二部213、第三部214以及第四部208，能够有效降低对所述压电基底的刻蚀损伤。
在本实施例中，所述第二部213的厚度分别等于所述第一部207 和所述第四部208的厚度；所述第三部214的厚度分别等于所述第一部207和所述第四部208的厚度。
在其他实施例中，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。能够进一步降低所述交叠区的波速，进而增大所述交叠区分别与所述第一间隔区和所述第二间隔区之间的波速差，减少谐振装置在工作时能量从所述交叠区向所述第一间隔区和所述第二间隔区泄漏，以提升谐振装置的性能。
相应的，本发明实施例中还提供了一种声表面波谐振装置，包括：压电基底200；位于所述压电基底200上的电极结构，所述电极结构包括沿第一方向X平行排布的第一总线209和第二总线210，所述第一总线209连接若干沿第二方向Y平行排布的第一电极条211，所述第二总线210连接若干沿所述第二方向Y平行排布的第二电极条212，所述第一方向X与所述第二方向Y垂直，所述第一电极条211和所述第二电极条212交错放置，所述第一电极条211包括沿所述第一方向X连接的第一部207和第二部213，所述第二电极条212包括沿所述第一方向X连接的第三部214和第四部208，所述第二部213和所述第三部214在所述第二方向Y上重叠，所述第一总线209和所述第二总线210之间具有沿所述第一方向X排布的第一间隔区A1、交叠区B1和第二间隔区A2，所述交叠区B1位于所述第一间隔区A1和所述第二间隔区A2之间，所述第二部213和所述第三部214位于所述交叠区B1，所述第一部207位于所述第一间隔区A1，所述第四部208位于所述第二间隔区A2，且所述第二部213的材料密度分别大于所述第一部207和所述第四部208的材料密度，所述第三部214的材料密度分别大于所述第一部207和所述第四部208的材料密度。
由于所述第二部213的材料密度分别大于所述第一部207和所述第四部208的材料密度，所述第三部214的材料密度分别大于所述第 一部207和所述第四部208的材料密度，以此降低所述交叠区的波速，进而增大所述交叠区B1分别与所述第一间隔区A1和所述第二间隔区A2之间的波速差，减少谐振装置在工作时能量从所述交叠区B1向所述第一间隔区A1和所述第二间隔区A2泄漏，以提升谐振装置的性能，具体表现为谐振装置的Qs(电学Q值)显著提升和Qp(声学Q值)值提升(如图25所示)。
请参考图23和图24，在一个实施例中，所述第一部207和所述第四部208分别为单层结构；所述第二部213和所述第三部214分别为单层结构。
当所述第二部213和所述第三部214为单层结构时，所述第二部213的材料包括：钼、钌、钨、铂、铜、铬、镁或钪；所述第三部214的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
所述第一部207的材料包括：铝或铝合金；所述第四部208的材料包括：铝或铝合金。
请继续参考图23和图24，在一个实施例中，所述第二部213的厚度分别等于所述第一部207和所述第四部208的厚度；所述第三部214的厚度分别等于所述第一部207和所述第四部208的厚度。
在其他实施例中，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。
请参考图10和图11，在一个实施例中，所述第一部207和所述第四部208分别为单层结构；所述第二部213和所述第三部214分别为多层结构。
请继续参考图10和图11，当所述第二部213和所述第三部214为多层结构时，所述第二部213和所述第三部214分别包括：第一金属层203以及位于所述第一金属层203上的第二金属层206，且所述第一金属层203的材料密度大于所述第二金属层206的材料密度。
所述第二金属层203的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
所述第二金属层206的材料分别与所述第一部207和所述第四部208的材料相同。
所述第一金属层206的材料包括：铝或铝合金。
应该理解，此处的例子和实施例仅是示例性的，本领域技术人员可以在不背离本申请和所附权利要求所限定的本发明的精神和范围的情况下，做出各种修改和更正。

Claims (23)

  1. 一种声表面波谐振装置，其特征在于，包括：
    压电基底；
    位于所述压电基底上的电极结构，所述电极结构包括沿第一方向平行排布的第一总线和第二总线，所述第一总线连接若干沿第二方向平行排布的第一电极条，所述第二总线连接若干沿所述第二方向平行排布的第二电极条，所述第一方向与所述第二方向垂直，所述第一电极条和所述第二电极条交错放置，所述第一电极条包括沿所述第一方向连接的第一部和第二部，所述第二电极条包括沿所述第一方向连接的第三部和第四部，所述第二部和所述第三部在所述第二方向上重叠，所述第一总线和所述第二总线之间具有沿所述第一方向排布的第一间隔区、交叠区和第二间隔区，所述交叠区位于所述第一间隔区和所述第二间隔区之间，所述第二部和所述第三部位于所述交叠区，所述第一部位于所述第一间隔区，所述第四部位于所述第二间隔区，且所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度。
  2. 如权利要求1所述的声表面波谐振装置，其特征在于，所述第一部和所述第四部分别为单层结构；所述第二部和所述第三部分别为单层结构或多层结构。
  3. 如权利要求2所述的声表面波谐振装置，其特征在于，当所述第二部和所述第三部为单层结构时，所述第二部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪；所述第三部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
  4. 如权利要求3所述的声表面波谐振装置，其特征在于，所述第一部的材料包括：铝或铝合金；所述第四部的材料包括：铝或铝合金。
  5. 如权利要求3所述的声表面波谐振装置，其特征在于，所述第二部的厚度分别等于所述第一部和所述第四部的厚度；所述第三部的厚度分别等于所述第一部和所述第四部的厚度。
  6. 如权利要求3所述的声表面波谐振装置，其特征在于，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。
  7. 如权利要求2所述的声表面波谐振装置，其特征在于，当所述第二部和所述第三部为多层结构时，所述第二部和所述第三部分别包括：第一金属层以及位于所述第一金属层上的第二金属层，且所述第一金属层的材料密度大于所述第二金属层的材料密度。
  8. 如权利要求7所述的声表面波谐振装置，其特征在于，所述第一金属层的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
  9. 如权利要求7所述的声表面波谐振装置，其特征在于，所述第二金属层的材料分别与所述第一部和所述第四部的材料相同。
  10. 如权利要求9所述的声表面波谐振装置，其特征在于，所述第二金属层的材料包括：铝或铝合金。
  11. 一种声表面波谐振装置的形成方法，其特征在于，包括：
    提供压电基底；
    在所述压电基底上形成电极结构，所述电极结构包括沿第一方向平行排布的第一总线和第二总线，所述第一总线连接若干沿第二方向平行排布的第一电极条，所述第二总线连接若干沿所述第二方向平行排布的第二电极条，所述第一方向与所述第二方向垂直，所述第一电极条和所述第二电极条交错放置，所述第一电极条包括沿所述第一方向连接的第一部和第二部，所述第二电极条包括沿所述第一方向连接的第三部和第四部，所述第二部和所述第三部在所述第二方向上重叠，所述第一总线和所述第二总线之间具有沿所述第一方向排布的第一间隔区、交叠区和第二间隔区，所 述交叠区位于所述第一间隔区和所述第二间隔区之间，所述第二部和所述第三部位于所述交叠区，所述第一部位于所述第一间隔区，所述第四部位于所述第二间隔区，且所述第二部的材料密度分别大于所述第一部和所述第四部的材料密度，所述第三部的材料密度分别大于所述第一部和所述第四部的材料密度。
  12. 如权利要求11所述的声表面波谐振装置的形成方法，其特征在于，所述第一部和所述第四部分别为单层结构；所述第二部和所述第三部分别为单层结构或多层结构。
  13. 如权利要求12所述的声表面波谐振装置的形成方法，其特征在于，当所述第二部和所述第三部为单层结构时，所述第一部、第二部、第三部以及第四部的形成方法包括：在所述第一间隔区和所述第二间隔区上、以及部分所述交叠区上形成第一光刻胶层；以所述第一光刻胶层为掩膜，在所述交叠区和所述第一光刻胶层上形成第一电极材料层；采用第一剥离工艺去除所述第一光刻胶层以及位于所述第一光刻胶层上的第一电极材料层，形成所述第二部和所述第三部；在所述交叠区上、部分所述第一间隔区上以及部分所述第二间隔区上形成第二光刻胶层，所述第二光刻胶层覆盖所述第二部和所述第三部；以所述第二光刻胶层为掩膜，在所述第一间隔区、第二间隔区以及所述第二光刻胶层上形成第二电极材料层；采用第二剥离工艺去除所述第二光刻胶层以及位于所述第二光刻胶层上的第二电极材料层，形成所述第一部和所述第四部。
  14. 如权利要求12所述的声表面波谐振装置的形成方法，其特征在于，当所述第二部和所述第三部为单层结构时，所述第二部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪；所述第三部的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
  15. 如权利要求14所述的声表面波谐振装置的形成方法，其特征在于，所述第一部的材料包括：铝或铝合金；所述第四部的材料包 括：铝或铝合金。
  16. 如权利要求14所述的声表面波谐振装置的形成方法，其特征在于，所述第二部的厚度分别等于所述第一部和所述第四部的厚度；所述第三部的厚度分别等于所述第一部和所述第四部的厚度。
  17. 如权利要求14所述的声表面波谐振装置的形成方法，其特征在于，所述第二部的厚度分别大于所述第一部和所述第四部的厚度；所述第三部的厚度分别大于所述第一部和所述第四部的厚度。
  18. 如权利要求11所述的声表面波谐振装置的形成方法，其特征在于，当所述第二部和所述第三部为多层结构时，所述第二部和所述第三部分别包括：第一金属层以及位于所述第一金属层上的第二金属层，且所述第一金属层的材料密度大于所述第二金属层的材料密度。
  19. 如权利要求18所述的声表面波谐振装置的形成方法，其特征在于，所述第一部、第一金属层、第二金属层以及第四部的形成方法包括：在所述第一间隔区、交叠区以及第二间隔区上形成第一电极材料层；对所述第一电极材料层进行第一图形化处理，形成所述第一金属层；在所述第一间隔区、第一金属层以及第二间隔区上形成第二电极材料层；对所述第二电极材料层进行第二图形化处理，形成所述第二金属层、第一部和第四部。
  20. 如权利要求18所述的声表面波谐振装置的形成方法，其特征在于，所述第一部、第一金属层、第二金属层以及第四部的形成方法包括：在所述第一间隔区和所述第二间隔区上、以及部分所述交叠区上形成第一光刻胶层；以所述第一光刻胶层为掩膜，在所述交叠区和所述第一光刻胶层上形成第一电极材料层；采用第一剥离工艺去除所述第一光刻胶层以及位于所述第一光刻胶层上的第一电极材料层，形成所述第一金属层；在部分所述第一间隔区、部分所述交叠区以及部分所述第二间隔区上形成第二光刻胶层；以所述第二光刻胶层为掩膜，在所述第一间隔区、交叠区、第二 间隔区以及所述第二光刻胶层上形成第二电极材料层；采用第二剥离工艺去除所述第二光刻胶层以及位于所述第二光刻胶层上的第二电极材料层，形成所述第二金属层、第一部以及第四部。
  21. 如权利要求18所述的声表面波谐振装置的形成方法，其特征在于，所述第一金属层的材料包括：钼、钌、钨、铂、铜、铬、镁或钪。
  22. 如权利要求18所述的声表面波谐振装置的形成方法，其特征在于，所述第二金属层的材料分别与所述第一部和所述第四部的材料相同。
  23. 如权利要求22所述的声表面波谐振装置的形成方法，其特征在于，所述第二金属层的材料包括：铝或铝合金。
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