WO2024023225A1 - Dispositif capteur, dispositif optoélectronique et procédé de fabrication d'un dispositif capteur - Google Patents

Dispositif capteur, dispositif optoélectronique et procédé de fabrication d'un dispositif capteur Download PDF

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Publication number
WO2024023225A1
WO2024023225A1 PCT/EP2023/070855 EP2023070855W WO2024023225A1 WO 2024023225 A1 WO2024023225 A1 WO 2024023225A1 EP 2023070855 W EP2023070855 W EP 2023070855W WO 2024023225 A1 WO2024023225 A1 WO 2024023225A1
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WO
WIPO (PCT)
Prior art keywords
cap
lens
pocket
sensor device
detector chip
Prior art date
Application number
PCT/EP2023/070855
Other languages
English (en)
Inventor
Martin Faccinelli
Gerhard Peharz
Howard Lai
Original Assignee
Ams International Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams International Ag filed Critical Ams International Ag
Publication of WO2024023225A1 publication Critical patent/WO2024023225A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Definitions

  • Optical sensor modules for time of flight ( ToF) and/or 3D- sensing need an optical imaging system integrated to enable spatial resolution and/or improve the signal on the sensor array .
  • the imaging optics typically one or more lenses
  • the imaging optics need to be positioned at a minimum distance to the sensor, which predefine the minimum height of the final sensor product .
  • An approach for creating an imaging system for ToF and 3D- sensing applications is based on stacking lenses in a barrel optics system above each other .
  • one or more plastic lenses are screwed into a plastics barrel in order to adj ust the right distance for focusing .
  • the resulting mechanical construction typically has a high aspect ratio . This can mean that the height of the module is same or more as the baseline width .
  • mechanical stress such as shock and vibration the forces and torque are a challenge for systems with high mechanical aspect ratio .
  • barrel optics are typically made by inj ection molding and therefore comprise thermoplastics materials .
  • a resulting drawback is that the maximum temperature for barrel optics is limited and does not allow reflow for the corresponding process .
  • This also means that such modules are not SMD ( SMD : surface-mounted device ) compatible and need a more expensive system integration ( e . g . flex-mounting) . It is an obj ect to provide a sensor device , an optoelectronic device and a method for fabricating a sensor device that enable reduced module height , simpli fied assembly, improved mechanical integrity and enhanced optical performance .
  • the sensor device comprises a substrate with a main surface . It further comprises a detector chip arranged on the main surface of the substrate .
  • the sensor device further comprises a cap arranged on the main surface of the substrate enclosing the detector chip .
  • the cap defines a pass-through from a topside of the cap to the detector chip .
  • the pass-through comprises an aperture and a pocket , wherein the aperture is arranged between the detector chip and the pocket .
  • a lens or a lens stack is arranged in the pocket .
  • the substrate may be implemented as printed circuit board, PCB .
  • the substrate may further be implemented as premolded leadframe .
  • the detector chip may be implemented as application-speci fic integrated circuit , AS IC, or as a stack of AS ICs .
  • the detector chip comprises at least one photosensitive surface , which is , for example , implemented as photodiode or single-photon avalanche diode , SPAD .
  • the detector chip is configured to detect electromagnetic radiation .
  • the detector chip is configured to detect electromagnetic radiation in the ultraviolet (UV) , visible and/or near-infrared (NIR) wavelength range .
  • the detector chip may be configured to detect light between 300 nm and 1400 nm.
  • the detector chip may be electrically connected to the substrate , for example by means of wire bonds and/or bump contacts .
  • the cap is arranged on the main surface of the substrate , such that it surrounds the detector chip in lateral directions . Lateral directions run parallel to the main plane of extension of the substrate . The cap exceeds the detector chip in a transversal direction that runs perpendicular to the main plane of extension of the substrate .
  • the cap may also be called lid or housing .
  • the cap may be glued to the substrate by means of an adhesive .
  • the cap is configured to protect the detector chip and the electrical connections of the detector chip .
  • the pass-through defined by the cap reaches from the topside of the cap to a bottom side of the cap . The topside of the cap faces away from the substrate , while the bottom side of the cap is attached to the substrate . The pass-through is aligned with the detector chip .
  • the pass-through may comprise several portions , wherein the portions may have di f ferent dimensions .
  • the pass-through comprises the aperture and the pocket .
  • the pocket may have a larger diameter than the aperture , wherein the diameter refers to an extent in lateral directions .
  • the aperture is closer to the bottom side of the cap, and the pocket is closer to the topside of the cap .
  • the pocket may be open towards the topside of the cap, such that it is accessible via the topside .
  • the lens or the lens stack can be inserted into the pocket .
  • the terms lens or lens stack are used as synonyms .
  • the lens is arranged in the pocket defined by the cap .
  • the lens is separated from the detector chip by the aperture .
  • the lens may be glued into the pocket using an adhesive .
  • the lens may comprise one or more than one base blocks .
  • the lens may comprise one or more than one optically active surfaces .
  • at least one of the optically active surfaces comprises a meta-surf ace .
  • the lens comprises glass as material . It is also possible that the lens is implemented as imprinted or molded lens . As the lens is positioned inside the pocket the top plane of the sensor device is not defined by the lens but by the topside of the cap . Thus , the sensitive lens is protected by the cap .
  • the height of the sensor device may be decreased without sacri ficing optical performance . Since the height can be low it is possible to maintain mechanical integrity (no detach or drop ) of the optical imaging system even under high mechanical stress such as shock (mechanical drop ) and vibration .
  • the lens can be inserted into the pocket from the topside of the cap that facilitates assembly compared to solutions , where the lens is arranged in a hanging position . This also enables better alignment accuracy during pick and place . Another advantage is that SMD compatible materials can be used, so that no complicated and expensive system integration is needed .
  • the pocket has a larger diameter than the aperture .
  • the cap forms a mounting surface inside the pocket , on which the lens or the lens stack is arranged .
  • the mounting surface is formed by the step of the pass-through where the aperture and the pocket touch each other .
  • the mounting surface forms the base of the pocket .
  • the mounting surface may be parallel to the main plane of extension of the substrate .
  • the aperture reaches from the mounting surface towards the detector chip .
  • the mounting surface is provided inside the cap, so that the lens can be arranged in a recessed position .
  • the sensor device further comprises a sealing layer .
  • the sealing layer is arranged between sidewalls of the pocket and the lens or the lens stack, respectively .
  • the sealing layer may mechanically connect the lens to the sidewalls of the pocket .
  • the sealing layer may deposited around the lens .
  • the sealing layer is deposited by dispensing or j etting .
  • the viscosity of the sealing layer may be low enough that capillary forces cause it to penetrate also spaces between the lens stack and the cap which are too narrow for direct dispensing or j etting .
  • the sealing layer adheres to the bottom of the pocket and to the lens sidewall , hence , increasing the mechanical strength of the contact between the lens stack and the cap . It may also cover parts of the top surface but not the top lens or optically active surface .
  • the sealing layer covers at least a portion of the lens side surface and/or at least a portion of the pocket sidewall .
  • the sealing layer may be configured to improve mechanical robustness of the lens attach .
  • the sealing layer re-enforces the lens attach by using also the sidewalls to bond and/or glue the lens to the cap, in particular into the pocket formed by the cap . This minimi zes failure risk ( lens detach) in mechanical shock or vibration .
  • the sealing layer comprises an opaque material .
  • the sealing layer may be polymer based .
  • the sealing layer comprises an epoxy based glue .
  • the sealing layer may be opaque in the optical spectrum from the UV to NIR wavelength region and thus absorbs or reflects ambient light which might enter the sensor through the side surface of the lens stack .
  • the sealing layer may be black .
  • the sealing layer may also be configured to avoid ambient light leakage into the sensor .
  • the pocket structure together with the sealing layer solve the issues of ambient light leakage through side surfaces of the lens as well as mechanical failure of interconnection due to a low overlap area between the lens and the mounting surface of the cap .
  • the sealing layer comprises a white material , in particular a white glue .
  • the sealing layer may comprise the white material only partly . This can mean that the white material is arranged in places only, for example between the lens and a particular sidewall of the pocket .
  • Electromagnetic radiation can be reflected at white surfaces . This can be utili zed to homogeni ze crosstalk signals on the sensor . In particular, system crosstalk may occur due to signals reflected at a cover glass covering the pocket .
  • the sensor device comprises a cover glass arranged at the topside of the cap covering the pass-through . These signals can be scattered at the white sealing layer to homogeni ze the crosstalk signal on the sensor .
  • the sensor device may be comprised by an optoelectronic device , e . g . a time-of- f light module , which further comprises a source of electromagnetic radiation, e . g . an emitter chip .
  • Said system crosstalk, i . e . light scattered at the cover glass may be utili zed to start a clock for measuring the time-of- f light .
  • the system crosstalk may be used as starting signal .
  • the system crosstalk is homogeni zed on the sensor by means of the white material .
  • ambient light should not be reflected by the sealing layer, it is preferred to use the white material only at one side of the pocket .
  • optical properties of the sensor device can be tuned and the optical performance can be increased .
  • the cap comprises a metal .
  • the cap comprises a polymer .
  • the cap comprises a liquid crystal polymer, LCP .
  • LCPs exhibit high tensile strength and a high modulus of elasticity .
  • the strongly anisotropic geometry ensures strong intermolecular cohesion, which means that the melting points are correspondingly high . This can mean that the cap is formed by a material that remains stable even at high temperatures .
  • the cap is compatible to surface-mounting technology, where reflow processes are used . This means that the sensor device may be soldered .
  • the cap comprises polyphthalamide , PPA.
  • PPA has a high mechanical strength, including tensile strength and flexural strength . It can withstand heavy loads and provide structural integrity to components .
  • PPA has a high heat resistance . Its high heat deflection temperature (HDT ) , typically above 200 ° C, makes it suitable for applications requiring prolonged exposure to high temperatures .
  • HDT high heat deflection temperature
  • the cap is compatible to surface-mounting technology, where reflow processes are used .
  • the properties of PPA material further include a low moisture absorption .
  • the cap exceeds the lens or the lens stack in the transversal direction. In other words the top plane of the sensor device is formed by the cap, while the lens is arranged in a recessed position. Thus, the lens, which is a sensitive part of the device, is protected by the cap.
  • the detector chip is arranged in a cavity of the cap.
  • the cavity is defined by the cap.
  • the cavity forms part of the pass-through .
  • the cavity is arranged at the bottom side of the cap.
  • the aperture connects the cavity and the pocket, such that an optical path from the topside to the bottom side of the cap is formed.
  • the cavity may have a larger diameter than the aperture.
  • the lateral extent of the cavity may be adjusted to the size of the detector chip.
  • the height of cavity, i.e. the extent in transversal direction, and/or the height of the aperture define the distance between the detector chip and the lens. Thus, the focus of the sensor device can be adjusted.
  • the cavity is configured to protect the detector chip.
  • the cap is formed as single piece. This can mean that the cap does not include barrel optics, which is separately attached to the cap.
  • the cap is formed by injection molding.
  • the cap is provided at the base of the pocket with a recess configured to serve as a reservoir for an adhesive used to secure the lens or lens stack in the pocket of the cap.
  • a recess configured to serve as a reservoir for an adhesive used to secure the lens or lens stack in the pocket of the cap.
  • This can mean that the recess is formed at the mounting surface.
  • the mounting surface may be recessed around the aperture.
  • the adhesive used to attach the lens to the cap is applied to the mounting surface and into the recess and the lens can be pressed onto the adhesive .
  • the recess can be shallow . By means of the recess serving as reservoir for the adhesive , tolerances for the thickness of the adhesive are more relaxed .
  • an optoelectronic device that comprises the sensor device as discussed above . This means that all features disclosed for the sensor device are also disclosed for and applicable to the optoelectronic device and vice-versa .
  • the optoelectronic device is a time-of- f light module . It is also possible , that the optoelectronic device is a 3D-sensing module , a proximity sensor or a presence detection sensor .
  • the optoelectronic device is integrated in a mobile device , such as a TV or a smartphone .
  • the optoelectronic device may also be used in automotive applications , such as assistance systems .
  • the optoelectronic device further comprises an emitter chip .
  • the emitter chip may be arranged on the substrate next to the detector chip .
  • the emitter chip comprises a laser diode , such as a vertical-cavity surface-emitting laser (VCSEL ) or an edge-emitting laser (EEL ) .
  • the emitter chip may emit electromagnetic radiation in a wavelength range corresponding to the wavelength range to be detected by the detector chip .
  • the emitted radiation may illuminate an obj ect , wherein rays reflected from that obj ect are detected by the detector chip .
  • a time-of- f light measurement can be conducted .
  • the emitter chip may be enclosed by the cap as well .
  • the detector chip and the emitter chip can be arranged on the same substrate in a space-saving way . Further, by using the same cap assembly of the optoelectronic device is facilitated .
  • the cap comprises an optical barrier between the detector chip and the emitter chip .
  • the barrier may be implemented as wall formed by the cap .
  • the sensor side of the module is separated from the emitter side . Emitted radiation cannot reach the sensor device directly but only via reflection at an obj ect to be detected .
  • the optoelectronic device further comprises emitter optics .
  • the emitter optics can be implemented as a further lens or a further lens stack .
  • the emitter optics can form a di f fuser .
  • This can mean that the emitter optics can be arranged on or above the emitter chip .
  • the emitter optics can be arranged in the further pass-through .
  • the arrangement of the emitter optics in the further pass-through can be similar as or equal to the arrangement of the lens or the lens stack in the pass-through above the detector chip .
  • the above description of the pass-through and the lens is also disclosed for the further pass-through and the emitter optics .
  • the emitter optics may also be arranged in a recessed position inside the cap .
  • di f ferent arrangements can also be possible .
  • a method for producing a sensor device is provided . All features disclosed for the sensor device are also disclosed for and applicable to the method for fabricating the sensor device and vice-versa .
  • the method for fabricating a sensor device comprises providing a substrate with a main surface .
  • the method further comprises arranging a detector chip on the main surface of the substrate .
  • the detector chip is glued and/or soldered to the substrate , which may be implemented as PCB or leadframe .
  • the method further comprises arranging a cap on the main surface of the substrate enclosing the detector chip .
  • the cap may be attached to the substrate by an adhesive .
  • the cap defines a pass-through from a topside of the cap to the detector chip, wherein the pass-through comprises an aperture and a pocket , the aperture being arranged between the detector chip and the pocket .
  • the method further comprises arranging a lens or a lens stack in the pocket .
  • the lens is attached to the cap by means of an adhesive .
  • the method further comprises arranging a sealing layer between sidewalls of the pocket and the lens or the lens stack .
  • the sealing layer may comprise an epoxy based glue .
  • the sealing layer is deposited by j etting or dispensing .
  • the method further comprises forming the cap as single piece by inj ection molding .
  • the cap comprises a liquid crystal polymer, LCP .
  • the pocket is arranged at the topside of the cap, such that the lens or the lens stack is insertable into the pocket from the topside .
  • arranging the lens or the lens stack may comprise inserting the lens or the lens stack into the pocket from the topside and mounting it on a mounting surface inside the pocket by means of an adhesive .
  • the mounting surface may be formed by the base of the pocket .
  • the aperture which may have a smaller diameter than the pocket , reaches from the mounting surface towards the detector chip . In top-view, the aperture may be positioned in the center of the mounting surface .
  • arranging the cap on the main surface of the substrate is conducted after arranging the detector chip on the main surface of the substrate and before arranging the lens or the lens stack in the pocket .
  • the pocket can be large enough to move the lens laterally and align it with the detector chip .
  • the method for fabricating a sensor device may result in the sensor device or the optoelectronic device according to one of the embodiments defined above .
  • the above defined embodiments aim to address the technical problem for ToF sensor modules to decrease an overall module height , without sacri ficing optical performance .
  • Alignment accuracy can be improved by providing a pocket in the cap in which the lens is nested .
  • Light leakage can be decreased by means of the sealing layer .
  • the arrangement of the sensor device allows materials to be used that are SMD compatible , so that no expensive system integration is needed .
  • the proposed device maintains mechanical integrity of the optical imaging system even under high mechanical stress such as shock and vibration . This is achieved by a single piece cap, wherein the attachment of the lens is enforced by means of the sealing layer .
  • Figures 1A-C show di f ferent views on a cap comprised by an exemplary embodiment of a sensor device/optoelectronic device .
  • Figures 2A-C show different views on the cap according to Fig. 1 with lens or lens stack.
  • Figure 3A-C show different views on the cap according to Fig. 1 with lens or lens stack and sealing layer.
  • Figures 4A-C show different views of an exemplary embodiment of a sensor device/optoelectronic device.
  • a top-view of a cap 10 is shown, which is comprised by an exemplary embodiment of a sensor device 1 or an optoelectronic device 100.
  • the complete sensor device 1 or optoelectronic device 100, respectively, is shown in Figures 4A-C.
  • the top-view refers to a view on the x-y plane, wherein x and y denote lateral directions which run parallel to a main plane of extension of the cap 10.
  • the extent of the cap 10 in the lateral direction x may be referred to as length of the cap 10.
  • the extent of the cap 10 in the lateral direction y may be referred to as width of the cap 10.
  • Fig. IB shows a cross-section of the cap 10 along the line C- C indicated in Fig. 1A.
  • Said cross-section refers to a view on the x-z plane, wherein z denotes a transversal direction which run perpendicular to a main plane of extension of the cap 10.
  • the extent of the cap 10 in the transversal direction z may be referred to as height of the cap 10.
  • the cap 10 In the transversal direction z the cap 10 may have a height of at least 0.5 mm and at most 10 mm. In a preferred embodiment, the cap 10 may have a height of at least 1 mm and at most 3 mm .
  • Fig . 1C shows a cross-section of the cap 10 along the line D- D indicated in Fig . 1A. Said cross-section refers to a view on the y- z plane .
  • the cap 10 may be formed by a single piece .
  • the cap 10 comprises a liquid crystal polymer, LCP, and is fabricated by inj ection molding .
  • the cap 10 can be designed as a compact component , with one or more cavities formed in the cap 10 .
  • the cap 10 comprises a pass- through 11 from a topside 15 of the cap 10 to a bottom side of the cap 10 as shown in Figs . 1A to 1C . In other words , the pass-through 11 penetrates the cap 10 .
  • the pass-through 11 is defined by the cap 10 .
  • the pass-through 11 comprises several portions .
  • the pass-through 11 comprises a cavity 16 at the bottom side of the cap 10 .
  • the cavity 16 is formed as a recess in the cap 10 .
  • the pass-through 11 comprises a pocket 12 at the topside 15 of the cap 10 .
  • the pocket 12 is also formed as a recess in the cap 10 .
  • the pocket 12 and the cavity 16 are connected to each other by an aperture 14 comprised by the pass-through 11 .
  • the pass-through 11 is defined by the cavity 16 , the aperture 14 and the pocket 12 .
  • the aperture 14 is arranged between the cavity 16 and the pocket 12 .
  • the pass-through 11 traverses the cap 10 in the transversal direction z .
  • a diameter of the aperture 14 is smaller than a diameter of the pocket 12 .
  • the diameter of the aperture 14 is also smaller than a diameter of the cavity 16 .
  • the si ze of the diameter of the pocket 12 is 110-500% the si ze of the diameter of the aperture 14 . That the diameter of the aperture 14 is smaller than the diameter of the pocket 12 means that a step is formed inside the cap 10 .
  • the pocket 12 comprises a base 13 which may also be referred to as mounting surface 13 .
  • the larger the diameter of the pocket 12 compared to the diameter of the aperture 14 the larger the mounting surface 13 .
  • the mounting surface 13 encloses the aperture 14 in lateral directions x, y .
  • the aperture 14 may be positioned in the center of the mounting surface 13 .
  • the pocket 12 further comprises a sidewall 17 which defines the pocket 12 in lateral directions x, y .
  • the pocket 12 is open at the top, that is , towards the topside 15 of the cap 10 .
  • the pocket 12 may have an arbitrary shape in top-view .
  • the pocket 12 has a round or elliptic shape in topview .
  • the pocket 12 defines a rectangular shape .
  • the aperture 14 may have an arbitrary shape in top-view as well .
  • the aperture 14 defines a circle in top-view, such that the aperture 14 is cylindrical .
  • the cap 10 may further comprise a further pass-through 18 .
  • the further pass-through 18 may also be omitted .
  • the optoelectronic device 100 comprises a detector chip 50 and an emitter chip 60 ( as shown in Figs . 4A-C ) may be arranged in separate pass-throughs 11 , 18 .
  • the further pass-through 18 may also penetrate the cap 10 from the topside 15 to the bottom side of the cap 10 .
  • the pass- through 11 and the further pass-through 18 may be separated by a barrier 19 defined by the cap 10.
  • the barrier 19 forms a wall of the cap 10.
  • the cap 10 including the barrier 19 may be opaque to light emitted by the emitter chip 60.
  • the cap 10 is opaque for light in the ultraviolet, visible and/or near-infrared wavelength region or at least a portion of these wavelength regions.
  • the pass-through 11 and the further pass-through 18 are optically separated.
  • the further pass-through 18 may have an arbitrary shape in top-view.
  • the further pass-through 18 has a rectangular shape, as shown in Fig. 1A.
  • the cap 10 may be provided with a recess 5 at the base, i.e. mounting surface 13, of the pocket 12.
  • the recess 5 is configured to serve as a reservoir for an adhesive used to secure the lens 20 or lens stack 20 in the pocket 12 of the cap 10.
  • the recess 5 may be formed around the aperture 14.
  • the recess 5 may have an arbitrary shape in top-view. As shown in Fig. 1A the recess may have a rhombus-like shape.
  • Figs. 2A-C show the cap 10 according to Figs. 1A-C, wherein a lens 20 or a lens stack 20 is arranged in the pocket 12.
  • Fig. 2A shows a view in the x-y plane, i.e. a topview.
  • Fig. 2B is a cross-section in the x-z plane along line E-E indicated in Fig. 2A.
  • Fig. 2C shows a cross-section in the y-z plane along line F-F indicated in Fig. 2A.
  • the lens 20 is arranged on the mounting surface 13 of the pocket 12 and covers the aperture 14.
  • the lens 20 may comprise one or more base blocks and one or more optically active surfaces 22, 24.
  • the base blocks are stacked on top of each other, thus forming the lens stack 20.
  • each base block may comprise optically active surfaces.
  • the lens 20 comprises an optically active surface 22 that points in the transversal direction z, i.e. which faces away from the aperture 14 and the mounting surface 13. Said surface 22 may be referred to as top surface 22.
  • the lens 20 may comprise a further optically active surface 24 that faces the aperture 14. Parts of the further optically active surface 24 may reach into the aperture 14, as shown in Fig.
  • the lens comprises glass. It is also possible that the lens is implemented as imprinted or molded lens.
  • the optically active surfaces 22, 24 can be convex or concave.
  • at least one of the optically active surfaces comprises a meta-surface or a diffractive element.
  • the lens 20 may be inserted into the pocket 12 from the topside 15 of the cap 10 and attached to the mounting surface 13 by means of an adhesive layer 26.
  • the mounting surface 13 may comprise alignment structures to align the lens 20 with the aperture 14.
  • alignment structures to align the lens 20 may be provided at the substrate 40 (not shown) or the detector chip 50 (not shown) .
  • arranging the lens 20 or the lens stack 20 in the pocket (12) may be conducted after arranging the cap 10 on the substrate (40) with the detector chip (50) .
  • the lens 20 or lens stack 20 comprises a side surface spaced from the sidewall 17 of the pocket 12.
  • the cap 20 exceeds the top surface 22 of the lens 20 in the transversal direction z.
  • the top surface 22 is still arranged inside the pocket 12.
  • the adhesive layer 26 used to attach the lens 20 to the cap 10 is applied to the mounting surface 13 and into the recess 5, and the lens 20 is pressed onto the adhesive layer 26.
  • the recess 5 serves as reservoir for the adhesive layer 26 .
  • This can mean that the adhesive layer 26 is arranged between the lens 20 and the mounting surface 13 .
  • Figs . 3A-C show the cap 10 according to Figs . 2A-C, wherein in lateral directions x, y a sealing layer 30 is arranged around the lens 20 .
  • Fig . 3A shows a view in the x-y plane , i . e . a top-view .
  • Fig . 3B is a cross-section in the x- z plane along line G-G indicated in Fig . 3A.
  • Fig . 3C shows a cross-section in the y- z plane along line H-H indicated in Fig . 3A.
  • the sealing layer 30 covers parts of the mounting surface 13 that are not covered by the lens 20 .
  • the sealing layer 30 is arranged between the lens 20 and the sidewalls 17 of the pocket 12 .
  • the sealing layer 30 connects the lens 20 to the sidewalls 17 of the pocket 12 .
  • the sealing layer 30 may completely fill the gap between at least one of the sidewalls 17 of the cap 10 and the lens 20 .
  • the sealing layer 30 may cover parts of the lens 20 but not the optically active top surface 22 .
  • the viscosity of the sealing layer 30 may be low enough that capillary forces cause it to penetrate also spaces between the lens stack 20 and the cap 10 .
  • the sealing layer 30 is deposited by dispensing or j etting and comprises an epoxy-based glue .
  • the sealing layer 30 may comprise a black and/or white material .
  • the sealing layer 30 is opaque to light in a predetermined wavelength range and may absorb or reflect light in this wavelength range .
  • the sealing layer 30 is provided to absorb or reflect ambient light , so that it does not enter the side surface of the lens 20 .
  • Figs. 4A-C show the complete sensor device 1 or the complete optoelectronic device 100, respectively. Again, Fig. 4A shows a view in the x-y plane, i.e. a top-view. Fig.
  • FIG. 4B is a crosssection in the x-z plane along line A-A indicated in Fig. 4A.
  • Fig. 4C shows a cross-section in the y-z plane along line B-B indicated in Fig. 4A.
  • the shown embodiment may refer to the optoelectronic device 100 as defined in the claims, if the emitter side (right-hand side of Fig. 4A) is present. However, the emitter side may be omitted.
  • the sensor device 1 further comprises a substrate 40, on which the cap 10 is arranged.
  • the main plane of extension of the substrate 40 runs parallel to the lateral directions x, y.
  • the substrate 40 is implemented as printed circuit board or premolded leadframe.
  • the substrate may comprise one or more layers.
  • the cap 10 may be attached to a main surface of the substrate 40 by means of an adhesive, such that the topside 15 of the cap 10 faces away from the substrate 40.
  • the sensor device 1 further comprises a detector chip 50 that is arranged on the main surface of the substrate 40.
  • the cap 10 encloses the detector chip 50.
  • the detector chip 50 may be arranged in the cavity 16 formed by the cap 10, as shown in Figs. 4B and 4C.
  • the detector chip 50 may be implemented as application-specific integrated circuit, ASIC, or as a stack of ASICs.
  • the detector chip 50 comprises at least one photosensitive surface, which is for example implemented as photodiode or single-photon avalanche diode, SPAD.
  • An optical path is formed from the detector chip 50 to the topside 15 of the cap 10 via the cavity 16, the aperture 14 and the pocket 12 forming the pass-through 11. Light rays may pass through the lens 20 to reach the detector chip 50.
  • the sensor device 1 may form part of the optoelectronic device 100 , as shown in Figs . 4A-C ( left-hand side of the shown embodiment ) .
  • the optoelectronic device 100 may further comprise an emitter chip 60 arranged on the main surface of the substrate 40 .
  • the emitter chip 60 is arranged in the further pass-through 18 defined by the cap 10 , such that the emitter chip 60 is optically separated from the detector chip 50 .
  • the emitter chip 60 may be implemented as applicationspeci fic integrated circuit , AS IC, or as a stack of AS ICs .
  • the emitter chip comprises a vertical-cavity surface-emitting laser, VCSEL, or the like .
  • the optoelectronic device 100 may comprise further optics 70 for the emitter 60 .
  • the further optics 70 may be referred to as emitter optics 70 .
  • the emitter optics 70 are arranged on or above the emitter chip 60 .
  • the emitter optics 70 are preferably arranged in the further pass-through 18 .
  • the emitter optics 70 are spaced from the emitter chip 60 by means of a spacer structure 80 to ensure an appropriate distance for focusing .
  • the emitter optics 70 may comprise a further lens or a further lens stack having corresponding features as the lens 20 or lens stack 20 .
  • the emitter optics 70 may be implemented as di f fuser .
  • the emitter optics 70 are fixed in the further pass-through 18 by adhesive means .
  • the shown embodiment aims to reduce the sensor module height without sacri ficing on optical performance ( focal distance ) . This is solved by the putting the lens in the pocket 12 of the cap 10 . That enables to save the height contributed by the cap 10 on top ( ceiling) . Further, the shown embodiment enables easy assembly, since only materials which are reflow compatible ( SMD compatible ) may be used . Attaching the lens 20 from top into the pocket 12 of the cap 10 minimi zes the misalignment tolerances of the lens 20 to the detector 50 in all directions x, y and z during assembly .
  • Mechanical integrity is inter alia achieved by re-enforcing the attachment of the lens 20 and use also the sidewalls 17 of the pocket 12 to bond/glue the lens 20 to the cap 10 by means of the sealing layer 30 .
  • This minimi zes failure risk ( lens detach) in mechanical shock or vibration .
  • using an opaque material as sealing layer 30 dispensed around the lens 20 decreases the risk of ( ambient ) light entering the lens/ lens stack 20 through the side surface and reduces risk of "ghost signal sensing" resulting from several light bounces in the lens 20 and/or the cap 10 .

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Light Receiving Elements (AREA)

Abstract

L'invention concerne un dispositif capteur qui comprend un substrat (40) avec une surface principale, une puce de détecteur (50) étant disposée sur la surface principale du substrat. Il comprend en outre un capuchon (10) disposé sur la surface principale du substrat (40) entourant la puce de détecteur (50), le capuchon (10) définissant un passage (11) allant d'un côté supérieur (15) du capuchon (10) à la puce de détecteur (50). Le passage (11) comprend une ouverture (14) et une poche (12), l'ouverture (14) étant disposée entre la puce de détecteur (50) et la poche (12). Une lentille (20) ou l'empilement de lentilles (20) est disposé dans la poche (12).
PCT/EP2023/070855 2022-07-28 2023-07-27 Dispositif capteur, dispositif optoélectronique et procédé de fabrication d'un dispositif capteur WO2024023225A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022118991.0 2022-07-28
DE102022118991 2022-07-28

Publications (1)

Publication Number Publication Date
WO2024023225A1 true WO2024023225A1 (fr) 2024-02-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/070855 WO2024023225A1 (fr) 2022-07-28 2023-07-27 Dispositif capteur, dispositif optoélectronique et procédé de fabrication d'un dispositif capteur

Country Status (1)

Country Link
WO (1) WO2024023225A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19945133A1 (de) * 1999-09-21 2001-04-12 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Gehäuse für Detektorbauelemente mit Seitenlichtempfindlichkeit
US20160306265A1 (en) * 2014-07-23 2016-10-20 Heptagon Micro Optics Pte. Ltd. Light emitter and light detector modules including vertical alignment features
US20200127156A1 (en) * 2016-02-19 2020-04-23 Heptagon Micro Optics Pte. Ltd. Optoelectronic Module Having Dual Encapsulation With Opening for Receiving an Optical Assembly
US20210126151A1 (en) * 2017-04-27 2021-04-29 Kyocera Corporation Light reception/emission element module and sensor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19945133A1 (de) * 1999-09-21 2001-04-12 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Gehäuse für Detektorbauelemente mit Seitenlichtempfindlichkeit
US20160306265A1 (en) * 2014-07-23 2016-10-20 Heptagon Micro Optics Pte. Ltd. Light emitter and light detector modules including vertical alignment features
US20200127156A1 (en) * 2016-02-19 2020-04-23 Heptagon Micro Optics Pte. Ltd. Optoelectronic Module Having Dual Encapsulation With Opening for Receiving an Optical Assembly
US20210126151A1 (en) * 2017-04-27 2021-04-29 Kyocera Corporation Light reception/emission element module and sensor device

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