WO2024010126A1 - Source d'évaporation linéaire - Google Patents

Source d'évaporation linéaire Download PDF

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Publication number
WO2024010126A1
WO2024010126A1 PCT/KR2022/010152 KR2022010152W WO2024010126A1 WO 2024010126 A1 WO2024010126 A1 WO 2024010126A1 KR 2022010152 W KR2022010152 W KR 2022010152W WO 2024010126 A1 WO2024010126 A1 WO 2024010126A1
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WO
WIPO (PCT)
Prior art keywords
crucible
space
hole
unit space
evaporation source
Prior art date
Application number
PCT/KR2022/010152
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English (en)
Korean (ko)
Inventor
문병준
전창엽
최건훈
김인규
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Publication of WO2024010126A1 publication Critical patent/WO2024010126A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a linear evaporation source, and more specifically, to a deposition apparatus for depositing a deposition material as a deposited object.
  • Deposition is a method of coating gaseous particles as a thin solid film on the surface of an object such as metal or glass.
  • the OLED display panel manufacturing process includes a process of depositing organic materials on a substrate such as a glass substrate in a vacuum.
  • the deposition process is a process of heating a crucible containing organic/inorganic materials to evaporate the organic/inorganic materials into a gaseous state, and a process in which the organic materials in the gaseous state pass through a nozzle and are deposited on the substrate.
  • the gaseous organic material must be deposited uniformly on the substrate. Therefore, it is preferable that the linear evaporation source uniformly supplies the gaseous organic material to a plurality of nozzles, and the gaseous organic material that has passed through the plurality of nozzles is preferably guided uniformly to each region of the substrate.
  • the heat distribution of the crucible may not be constant, the internal pressure distribution may also be different, and the evaporation temperature may also vary depending on the distortion of the internal pressure distribution of the crucible.
  • the material may be exhausted unevenly in the filling space.
  • a linear evaporation source that maintains thin film uniformity disclosed in Korean Patent Publication No. 10-1608586 B1 (announced on April 4, 2016), and the linear evaporation source evaporates the material.
  • a linear evaporation source including a crucible containing a crucible and a nozzle unit on which a nozzle for spraying evaporated material is formed, an outer baffle having a plurality of holes below the nozzle unit; and below the outer baffle, spaced apart from the outer baffle, and filling the material.
  • An inner baffle positioned at a position spaced upward from the surface, wherein a plurality of holes are uniformly distributed on the outer baffle, and the inner baffle has holes concentrated only in a certain section from the center, and holes at both ends of the other baffle. It is composed of a closed surface, forming a Gaussian distribution in which the material flux is concentrated at the center regardless of the distribution of the material contained in the crucible, and uniformly distributes the material through the outer baffle.
  • the linear evaporation source according to the prior art has holes formed only in a certain section from the center of the inner baffle, and is composed of a closed surface without holes at both ends of the inner baffle, so that pressure is generated in an area relatively far from the hole among the internal areas of the crucible. There is a problem that there is a high possibility of denaturation of the material due to high pressure and temperature.
  • the purpose of this embodiment is to provide a linear evaporation source that allows the non-uniform remaining material to be deposited to a uniform thickness as much as possible, even if an asymmetric phenomenon occurs in which the material mainly remains in the area close to the left or right wall of the crucible.
  • This embodiment provides a linear evaporation source in which a floor plate is disposed on the inner lower part of the crucible to collect the evaporation material to the inner center of the crucible.
  • the linear evaporation source includes a crucible that is long in the left and right directions and has a deposition space for accommodating the deposition material formed between the left and right walls; A heater that heats the crucible around the outside of the crucible; A crucible cap covering the deposition space and providing a plurality of nozzles spaced apart; a plurality of inner plates positioned spaced apart from each other on the lower side of the crucible cap; A plurality of partition walls accommodated in the deposition space, spaced apart in the left and right directions, and dividing the deposition space into a plurality of unit spaces; And it may include a plurality of floor plates disposed closer to the inner bottom surface of the crucible among the inner bottom surface and inner plate of the crucible.
  • a communication hole may be formed in the lower part of the plurality of partitions to communicate a pair of adjacent unit spaces.
  • the plurality of unit spaces includes at least one left unit space that is closer to the left wall among the left wall and the right wall, at least one right unit space that is closer to the right wall among the left wall and the right wall, and between the left unit space and the right unit space. It may include a central unit space located in .
  • the plurality of floor plates may include a left floor plate provided for each left unit space to guide the deposition material to the lower side of the central unit space, and a right floor plate provided for each right unit space to guide the deposition material to the lower side of the central unit space. You can.
  • the lower inner plate includes at least one first hole closer to the left wall among the left and right walls in the longitudinal direction of the crucible, and at least one second hole closer to the right wall among the left and right walls. can do.
  • the first hole and the second hole may not be formed at the center of the lower inner plate in the longitudinal direction of the lower inner plate.
  • the central unit space may be oriented between the first hall and the second hall.
  • the height of the top surface of the plurality of floor plates may be higher than the height of the bottom of the partition wall.
  • the left-right length of the floor plate may be shorter than the left-right length of the unit space.
  • At least one support leg that contacts the bottom surface of the crucible may be connected to each of the plurality of floor plates.
  • a seating portion on which each floor plate is seated may be formed in the crucible.
  • the seating portion may be spaced apart from the inner bottom surface of the crucible.
  • the floor plate guides the deposition material to the inner center side of the crucible, thereby minimizing the uniformity deviation of the deposition material.
  • the deposition material is dispersed and flows from the central unit space to the first hole and the second hole, thermal stability is excellent.
  • pressure load can be minimized even when the material is exhausted late in the deposition process.
  • FIG. 1 is a cross-sectional view showing a deposition apparatus according to this embodiment
  • Figure 2 is a cross-sectional view showing the interior of an example of a linear evaporation source according to this embodiment
  • Figure 3 is a cross-sectional view showing the inside of a crucible of another example of a linear evaporation source according to this embodiment
  • Figure 4 is a cross-sectional view showing the inside of a crucible of another example of a linear evaporation source according to this embodiment
  • Figure 5 is a cross-sectional view showing the inside of a crucible of a comparative example compared to this embodiment.
  • FIG. 1 is a cross-sectional view showing a deposition apparatus according to this embodiment.
  • the deposition device may include a housing (1), a substrate support (2) and a linear evaporation source (3).
  • a space 11 may be formed inside the housing 1.
  • the housing 1 may be a vacuum chamber that forms a vacuum in the space 11 when the deposition material is deposited on the substrate 21 by the linear evaporation source 3.
  • the substrate support 2 may be accommodated together with the linear evaporation source 3 in the space 11 inside the housing 1 .
  • the substrate support 2 may be located on the upper side of the space 11.
  • the substrate 21, which is a deposited object, may be supported on the substrate support 2.
  • the substrate 21 may have a square shape.
  • a mask 22 may be disposed between the substrate 21 and the linear evaporation source 3 so that the deposition material 42 vaporized in the linear evaporation source 3 is evenly guided to the substrate 21.
  • the mask 22 may be disposed on the lower side of the substrate 21 .
  • a hole may be formed in the mask 22 through which the vaporized deposition material passes.
  • a linear evaporation source 3 may be disposed within the housing 2 to vaporize the deposition material 42 on the substrate 21 .
  • the linear evaporation source 3 may include a crucible 4, an inner plate 5, a floor plate 6, a heater 7A, a heater frame 7B, and a crucible cap 8.
  • the crucible 4 may have a deposition space 41 formed therein and may be long in the left and right direction (Y).
  • the crucible 4 may have a shape in which the length in the left-right direction (Y) is longer than the width in the front-back direction (X).
  • the crucible 4 may be in the shape of a container with an open top.
  • the deposition material 42 may be accommodated in the deposition space 41 .
  • An example of the deposition material 42 may be an organic material.
  • the crucible 4 may be fastened to the crucible cap 8.
  • the crucible 4 may have a fastening body 44 protruding from the top, which is fastened to the crucible cap 8 with a fastening member 43 such as a screw.
  • the crucible 4 may be fastened to the fastening member 43, which is fastened to the fastening body 44 after penetrating the crucible cap 8, and may be fixed to the lower part of the crucible cap 8.
  • the crucible 4 may be integrated with the crucible cap 8 while being suspended from the crucible cap 8.
  • the inner plate 5 may be placed in the deposition space 41 and a hole 51 may be formed.
  • a plurality of holes 51 may be formed.
  • a plurality of inner plates 5 may be provided inside the crucible 4.
  • the plurality of inner plates 5 may be spaced apart in the vertical direction (Z).
  • the inner plate 5 may be placed on the inner plate mounting body 52 or may be placed directly on the crucible 4.
  • a seating portion 53 is formed on the upper part of the inner plate mounting body 52, and the seating portion 53 is located in the upper part of the crucible 4. It can be seated on a locking protrusion 45 formed around the circumference.
  • a plurality of inner plates 5 may be supported to be spaced apart from each other on the inner plate mounting body 52 .
  • a seating groove (or step) in which the inner plate 5 is seated may be formed on the inner circumference of the crucible 4.
  • a plurality of seating grooves may be provided, and a plurality of seating grooves may be formed to be spaced apart from each other on the inner circumference of the crucible 4.
  • a plurality of inner plates 5 may be seated on the inner circumference of the crucible 4 to be spaced apart from each other.
  • the floor plate 6 may be disposed on the inner lower part of the crucible 4.
  • the floor plate 6 may be disposed below 1/10 of the total height of the deposition space 41.
  • the floor plate 6 may guide the deposition material 42 in a generally horizontal direction (X, Y).
  • the floor plate 6 may reduce particle movement in the vertical direction (Z) and may not have a significant effect on particle movement in the horizontal direction.
  • the heater 7A can heat the crucible 4.
  • Heater 7A may include an electric heater.
  • the heater 7A may surround the outer circumferential surface of the crucible 4.
  • the heater 7A may heat the crucible 4 around the outside of the crucible 4.
  • the heater 7A is placed on the outside of the crucible 4 and can surround the front, rear, left, and right four sides of the crucible 4.
  • the heater frame 7B can support the heater 7A outside the crucible 4.
  • the heater frame 7B may include a frame 71 on the inside of which the heater 7A is installed, and a frame support 72 provided on the lower side of the frame 71 to support the frame 71.
  • the crucible cap 8 may be placed on top of the crucible 4 to cover the deposition space 41 .
  • the crucible cap 8 may be plate-shaped and may be a crucible plate disposed on top of the crucible 4.
  • the upper surface 81 of the crucible cap 8 may be parallel to the substrate 21.
  • the upper surface 81 of the crucible cap 8 may be horizontal.
  • the lower surface of the crucible cap (8) may face the crucible (4).
  • the upper part of the crucible 4 may be coupled to the crucible cap 8.
  • the crucible cap 8 may form a crucible assembly together with the crucible 4.
  • the crucible cap 8 may be provided with a plurality of nozzles 82.
  • the nozzle 82 is the outer nozzles 82a and 82b spaced apart in the longitudinal direction (Y) of the crucible cap 8, and the center located between the outer nozzles 82a and 82b. It may include a side nozzle (82c).
  • the outer nozzles 82a and 82b may include a left nozzle 82a and a right nozzle 82b, and each of the left nozzles 82a and the right nozzles 82b may be two or more.
  • the crucible cap 8 may be in contact with the heater frame 7B and may be supported on the heater frame 7B, as shown in FIG. 1 .
  • the crucible cap 8 may be rectangular in shape.
  • a surface contact portion 85 that contacts the heater frame 7B may be formed to protrude downward.
  • the crucible cap 8 may have a rectangular shape that is long in the left and right directions.
  • the heat transferred from the heater 7A to the heater frame 7B is transferred to the crucible cap 8 through the surface contact portion 85. This can be done, and clogging of the outer nozzles (82, 84) close to the surface contact portion (85) can be minimized.
  • areas other than the surface contact portion 85 of the crucible cap 8 may be spaced apart from the heater frame 7B, and the crucible cap 8 and A gap may be formed between the heater frames 7B.
  • a surface contact portion 85 may protrude along the circumference of the crucible cap 8, and the entire surface may be in contact with the heat frame 7.
  • the surface contact portion 85 may be formed in a strip shape on the bottom of the crucible cap 8 and may be in contact with the heater frame 7B without a gap.
  • a fastening body receiving groove 86 in which the fastening body 44 is accommodated may be formed recessed in the bottom of the crucible cap 8.
  • crucible cap 8 may be supported at three or more points on a member connected to the heater frame 7B.
  • the linear evaporation source 3 may further include a cooling block 90.
  • the cooling block 90 may surround the heater frame 7B on the outside of the heater frame 7B.
  • the cooling block 90 may have a space 91 formed therein.
  • the crucible 4, heater 7A, heater frame 7B, and crucible cap 8 can be accommodated in space 91.
  • the top of the cooling block 90 may be open.
  • the cooling block 90 may have a rectangular parallelepiped shape.
  • the cooling block 90 can block the heat emitted by the heater 7A from being emitted to the outside.
  • the cooling block 90 may include a refrigerant tube or a refrigerant channel through which a refrigerant such as coolant passes. Cooling block 90 includes a coolant block including refrigerant tubes or refrigerant channels.
  • the linear evaporation source 3 may include an upper reflector 92.
  • the upper reflector 92 may be placed on top of the cooling block 90.
  • An opening 93 may be formed in the upper reflector 92.
  • the opening 93 may have a circular or rectangular shape. It is possible to provide a plurality of openings 93.
  • the linear evaporation source 3 may include a lower plate 94 and a side reflector 96.
  • Lower support structure assembly 94 may support heater frame 7B.
  • the lower plater 94 may support the cooling block 90.
  • the lower support structure assembly may include a vertical post and a plate for support purposes, through which coolant may flow if necessary.
  • the plate may be included in the cooling jacket assembly.
  • the post can support the entire structure on the plate, and in the case of the coolant jacket assembly, it can prevent heat generated from the process equipment from spreading to the surroundings, and the heater frame (7B) and crucible (4), which are process equipment, are inside the coolant jacket. can be placed.
  • the lower end of the heater frame 7B and the lower end of the cooling block 90 may be placed on the lower plate 94.
  • the side reflector 96 may be disposed outside the heater frame 7B.
  • the side reflector 96 can reflect heat spreading around the heater 7A in the direction of the crucible 4 and increase the insulation effect.
  • the linear evaporation source 3 may further include a lower refractor 98.
  • the lower reflector 98 may be disposed on the heater frame 7B so as to be located below the crucible 4 and the heater 7A.
  • the lower reflector 98 is located inside the heater frame 7B and spaced apart from the lower end of the crucible 4.
  • the lower reflector 98 can reflect heat spreading below the heater 7A in the direction of the crucible 4 and increase the thermal insulation effect.
  • Figure 2 is a cross-sectional view showing the inside of a crucible according to this embodiment.
  • One side wall 46 of the crucible 4 and the other side wall 47 of the crucible 4 may be defined as walls that are spaced apart in the longitudinal direction (Y) of the crucible 4 and face each other.
  • One side wall 46 of the crucible 4 may be the left wall of the crucible 4, and the other side wall 47 of the crucible 4 may be the right wall of the crucible 4.
  • One side wall 46 of the crucible 4 and the other side wall 47 of the crucible 4 may be erected vertically on the bottom wall 48 of the crucible 4.
  • the crucible 4 may further include a plurality of partition walls 49.
  • a plurality of partition walls 49 may be accommodated in the deposition space 41 .
  • the plurality of partition walls 49 may be spaced apart in the left and right direction (Y).
  • the plurality of partition walls 49 may divide the deposition space 41 into a plurality of unit spaces (S1, S2, S3, S34, S5, S6, and S7).
  • the plurality of partition walls 49 may be spaced apart in the left and right direction (Y) between one side wall 46 of the crucible 4 and the other side wall 47 of the crucible 4.
  • a communication hole 49a may be formed in the lower part of the plurality of partition walls 49 to communicate with a pair of adjacent unit spaces.
  • the communication hole 49a may be formed between the inner bottom surface 48a of the crucible 4 and the lower end of the partition wall 49.
  • the communication hole 49a can reduce the particle path resistance of the deposition material 42 in the deposition space 41.
  • the communication holes 49a are not limited to the lower part of the plurality of partition walls 49, and a plurality of communication holes 49a may be formed above the lower part, and the lower communication hole formed in the lower part of the plurality of partition walls 49 and the height are higher than the lower communication hole. It is also possible to include an upper communication hole.
  • the plurality of unit spaces includes at least one left unit space (S1, S2, S3), at least one right unit space (S5, S6, S7), and a center It may include a unit space (S4).
  • At least one left unit space may be closer to the left wall (46) among the left wall (46) and the right wall (47).
  • At least one left unit space (S1, S2, S3) may be a space formed by a partition located on the left of the partition walls 49 and have an open upper and lower surface.
  • At least one right unit space (S5, S6, S7) may be closer to the right wall (47) among the left wall (46) and the right wall (47). At least one right unit space (S5, S6, S7) may be a space formed by a partition located on the right side of the partition walls 49 and have open upper and lower surfaces.
  • the central unit space (S4) may be located between the left unit spaces (S1, S2, and S3) and the right unit spaces (S5, S6, and S7).
  • the central unit space S4 may be a space formed by a partition located at the center of the partition walls 49 and have open upper and lower surfaces.
  • a plurality of inner plates 5 may be located below the crucible cap 8 and may be spaced apart from each other.
  • the plurality of inner plates 5 may include a lower inner plate 54.
  • the lower inner plate 54 may be defined as an inner plate located on the lower side among the plurality of inner plates 5.
  • the lower inner plate 54 may be spaced apart from the plurality of partition walls 49 in the vertical direction (Z).
  • the upper ends of the plurality of partition walls 49 may be disposed below the bottom of the lower inner plate 54 and may be spaced apart from the bottom of the lower inner plate 54.
  • a plurality of holes 51a and 51b may be formed in the lower inner plate 54.
  • the plurality of holes 51a and 51b may be spaced apart from each other in the longitudinal direction (Y) of the crucible 4.
  • the pair of holes (51a) (51b) is at least one first hole (51a) closer to one side wall (46) of the one side wall (46) and the other side wall (47) in the longitudinal direction (Y) of the crucible (4). ) and at least one second hole 51b closer to the other side wall 47 among the one side wall 46 and the other side wall 47.
  • the first hole 51a and the second hole 51b may not be formed at the center of the lower inner plate 54 in the longitudinal direction (Y) of the lower inner plate 54.
  • the first hole 51a and the second hole 51b are located on an imaginary line dividing the lower inner plate 54 into thirds in the longitudinal direction (Y) of the lower inner plate 54.
  • the first hole (51a) and the second hole (51b) are the area between one end in the longitudinal direction (Y) of the lower inner plate 54 and 1/3 of the inner plate 54, and the inner plate 54. It is not formed in the area between the 1/3 point and the 2/3 point of the inner plate 54, and in the area between the 2/3 point of the inner plate 54 and the other end in the longitudinal direction (Y) of the lower inner plate 54. It may not be possible.
  • the first hole 51a is formed at 1/4 to 1/3 of the lower inner plate 54 in the longitudinal direction (Y) of the lower inner plate 54. may be formed, and the second hole 51b may be formed at a 2/3 to 3/4 point of the lower inner plate 54 in the longitudinal direction (Y) of the lower inner plate 54.
  • the 1/4 point, 1/3 point, 2/3 point, and 3/4 point of the lower inner plate 54 may be points based on the left end of the lower inner plate 54.
  • the deposition material vaporized in the lower space of the lower inner plate 54 may be dispersed into the first hole 51a and the second hole 51b and diffuse into the upper space of the lower inner plate 54.
  • the lower inner plate 54 may be longer in the left-right direction (Y) than the width in the front-back direction (X), the first hole (51a) may be a left hole eccentric to the left, and the second hole (51b) may be a left hole. It may be a right hole eccentric to the right.
  • the vaporized deposition material 42 is moved to the central area SC among the lower spaces SL, SC, and SR of the lower inner plate 54. It is not concentrated and can be distributed left and right into the left area (SL) and right area (SR).
  • the first hole 51a is formed as a single long hole, or a plurality of first holes 51a are formed at a point between the outermost (left end of the lower inner plate 54) and the center, for example, 1/3 of the point. It can be formed in and can be formed densely.
  • a plurality of first holes 51a are formed between the 1/4 and 1/3 points of the lower inner plate 54, and may be formed densely at the 1/3 point.
  • the first hole 51a may be formed to gradually decrease in size from 1/3 of the lower inner plate 54 toward the left end or center of the lower inner plate 54.
  • the first hole 51a may be formed to gradually expand in size toward 1/3 of the lower inner plate 54.
  • a plurality of first holes 51a may be formed between the 1/4 and 1/3 points of the lower inner plate 54.
  • a plurality of first holes 51a are formed at 1/3 of the lower inner plate 54, and a plurality of first holes 51a are formed at the left end or lower inner plate at 1/3 of the lower inner plate 54.
  • the number may gradually decrease toward the center of (54).
  • the second hole 51b is formed as a single long hole, or a plurality of second holes 51b are formed at a point between the right end and the center of the lower inner plate 54, for example, the left end of the lower inner plate 54. It can be formed at 2/3 of the point from and can be formed densely.
  • a plurality of second holes 51b are formed between the 2/3 and 3/4 points of the lower inner plate 54, and may be formed densely at the 2/3 point.
  • the second hole 51b may be formed to gradually decrease in size from 2/3 of the lower inner plate 54 to the right end of the lower inner plate 54.
  • the second hole 51b may be formed to gradually expand in size toward 2/3 of the lower inner plate 54.
  • a plurality of second holes 51b may be formed between 2/3 and 3/4 of the lower inner plate 54.
  • a plurality of second holes 51b are formed at 2/3 of the lower inner plate 54, and a plurality of second holes 51b are formed at 2/3 of the lower inner plate 54.
  • the number may gradually decrease toward the right end or the center of the lower inner plate 54.
  • the first hole 51a and the second hole 51b may have a circular or square shape.
  • the first hole 51a and the second hole 51b as described above can guide the vaporized deposition material so that the internal pressure in the lower space of the lower inner plate 54 is not excessive, and the particle density in a specific area is It can prevent the internal pressure from increasing excessively and prevent the deterioration of the deposited material.
  • the plurality of inner plates 5 may further include an upper inner plate 55.
  • the upper inner plate 55 may be located above the lower inner plate 54.
  • a plurality of upper holes 51c may be formed in the upper inner plate 55.
  • a plurality of floor plates 6 may be provided inside the crucible 4.
  • a plurality of floor plates 6 may be arranged in a row in the longitudinal direction (Y) of the crucible 4.
  • the plurality of floor plates 6 may be spaced apart from each other in the longitudinal direction (Y) of the crucible 4.
  • Another example of the floor plate 6 may be provided as a single unit inside the crucible 4 when there is no partition.
  • the plurality of floor plates 6 may be disposed closer to the inner bottom surface 48a of the crucible 4 and the inner bottom surface 48a of the crucible 4 among the inner plates 5.
  • the inner bottom surface 48a of the crucible 4 may be defined as the upper surface of the bottom wall 48.
  • the number of floor plates 6 may be smaller than the number of unit spaces S1, S2, S3, S4, S5, S6, and S7.
  • the plurality of floor plates 6 may include a left floor plate 61 and a right floor plate 62.
  • the left floor plate 61 is provided for each left unit space (S1, S2, and S3) and can guide the deposition material to the lower side of the central unit space (S4).
  • the left floor plate 61 and the left unit spaces (S1, S2, and S3) may correspond 1:1.
  • the number of left floor plates 61 may be equal to the number of left unit spaces S1, S2, and S3.
  • the left floor plate 61 may guide the deposition material to the lower side of another adjacent left floor plate 61 or to the lower side of the central unit space S4.
  • the evaporated material evaporated from the lower side of the left unit space (S1, S2, S3) sequentially passes through the lower side of the central unit space (S4) and the central unit space (S4) to the partition wall 49 and the inner plate 4. It can flow into the space between (SL, SC, SR).
  • the right floor plate 62 may be spaced apart from the left floor plate 61 in the left and right direction (Y).
  • the right floor plate 62 is provided for each right unit space (S5, S6, and S7) and can guide the deposition material to the lower side of the central unit space (S4).
  • the right floor plate 62 and the right unit spaces S5, S6, and S7 may correspond 1:1.
  • the number of right floor plates 62 may be equal to the number of right unit spaces S5, S6, and S7.
  • the right floor plate 62 may guide the deposition material to the lower side of another adjacent right floor plate 62 or to the lower side of the central unit space S4.
  • the evaporated material evaporated from the lower side of the right unit space (S5, S6, S7) sequentially passes through the lower side of the central unit space (S4) and the central unit space (S4), and passes through the partition wall 49 and the inner plate 4. It can flow into the space between (SL, SC, SR).
  • the top height (H1) of the plurality of floor plates (6) may be higher than the bottom height (H2) of the partition wall (49).
  • the left-right direction (Y) length L1 of the floor plate 6 may be shorter than the left-right direction (Y) length L2 of the unit space.
  • a gap G may exist between the floor plate 6 and the partition wall 49, and a portion of the deposition material 42 evaporated from the lower side of the floor plate 6 may rise through the gap G. .
  • a hole with a certain opening may be formed, and a portion of the deposition material 42 evaporated on the lower side of the floor plate 6 may rise through the hole.
  • a portion of the deposited material 42 evaporated from the lower side of the left follower plate 61 may be guided to the central unit space (S4), and the remainder may be guided to the left unit spaces (S1, S2, and S3) through the gap (G). It can be guided upward.
  • the deposition material 42 evaporated from the lower side of the right follower plate 62 may be partially guided to the central unit space (S4) and then raised, and the remainder may be guided to the right unit space (S5, S6, You can be guided to S7) and ascend.
  • the plurality of floor plates 6 may be spaced apart from the inner bottom surface 48a of the crucible 4 in the vertical direction (Z).
  • a diffusion space in which the deposition material 42 diffuses may be formed between the bottom of the floor plate 6 and the inner bottom surface 48a of the bottom wall 48.
  • At least one support leg 63 in contact with the bottom surface 48a of the crucible 4 may be connected to each of the plurality of floor plates 6.
  • One example of the support leg 63 may be formed integrally with the left follower plate 61 or the right follower plate 61. Another example of the support leg 63 may be manufactured separately from the left follower plate 61 and the right follower plate 61 and then fastened to the left follower plate 61 and the right follower plate 61.
  • the floor plate 6 and the support leg 63 can be inserted into and detached from the crucible 4.
  • Figure 3 is a cross-sectional view showing the inside of a crucible of another example of a linear evaporation source according to this embodiment.
  • a seating portion 50 on which each of the floor plates 6 is seated may be formed in the crucible 4, and the configuration and operation other than the seating portion 50 may be the same as an example of a linear evaporation source.
  • the seating portion 50 may be spaced apart from the inner bottom surface 48a of the crucible 4.
  • the inner surface of the crucible 4 may have a stepped lower portion, and the seating portion 50 may be defined as the upper surface of the stepped portion of the inner surface of the crucible 4.
  • the floor plate 6 may be inserted into the crucible 4, and when the floor plate 6 is seated on the seating portion 50, the floor plate 6 is positioned on the inner bottom surface 48a of the crucible 4. It can be spaced apart from and can be mounted on the crucible (4).
  • Figure 4 is a cross-sectional view showing the inside of a crucible of another example of a linear evaporation source according to this embodiment.
  • a center hole 51d is formed in the center of the lower inner plate 54 among the inner plates 5, and other configurations and operations other than the lower inner plate 54 may be the same as an example of a linear evaporation source. .
  • the center hole 51d may face the central unit space S4 in an upward and downward direction, and the deposition material 42 raised through the central unit space S4 may pass through the center hole 51d and form the lower inner plate 54. ) and the upper inner plate 55.
  • Figure 5 is a cross-sectional view showing the inside of a crucible of a comparative example compared to this embodiment.
  • the crucible 4 of the comparative example does not include the floor plate (6, see FIGS. 1 and 2) of the present embodiment, and the other configuration and operation are the same as an example of the linear evaporation source according to the present embodiment.
  • the lower end of the partition 49 may be in contact with the lower wall 48 of the crucible 4, and the deposited material raised in each unit space (S1, S2, S3, S34, S5, S6, S7) is in the crucible. It can be raised up to the inner plate (5) without moving through the inner lower part of (4).

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Une source d'évaporation linéaire peut comprendre : une pluralité de cloisons de séparation qui sont logées dans un espace de dépôt d'un creuset, espacées les unes des autres dans les directions gauche et droite, et divisent l'espace de dépôt en une pluralité d'espaces unitaires ; et une pluralité de plaques de plancher qui sont disposées plus près de la surface inférieure interne du creuset parmi la surface inférieure interne et une plaque interne du creuset. Une source d'évaporation linéaire peut comprendre : une pluralité de cloisons de séparation qui sont logées dans un espace de dépôt d'un creuset, espacées les unes des autres dans les directions gauche et droite, et divisent l'espace de dépôt en une pluralité d'espaces unitaires ; et une pluralité de plaques de plancher qui sont disposées plus près de la surface inférieure interne du creuset parmi la surface inférieure interne et une plaque interne du creuset. La pluralité d'espaces unitaires peut comprendre des espaces unitaires gauches, des espaces unitaires droits et un espace unitaire central. La pluralité de plaques de plancher peut comprendre une plaque de plancher gauche disposée pour chaque espace unitaire gauche pour guider un matériau de dépôt vers un côté inférieur de l'espace unitaire central, et une plaque de plancher droite disposée pour chaque espace unitaire droit pour guider le matériau de dépôt vers le côté inférieur de l'espace unitaire central.
PCT/KR2022/010152 2022-07-08 2022-07-12 Source d'évaporation linéaire WO2024010126A1 (fr)

Applications Claiming Priority (2)

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KR1020220084311A KR20240007433A (ko) 2022-07-08 2022-07-08 선형 증발원
KR10-2022-0084311 2022-07-08

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WO2024010126A1 true WO2024010126A1 (fr) 2024-01-11

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011127217A (ja) * 2009-12-17 2011-06-30 Samsung Mobile Display Co Ltd 線形蒸発源及びそれを用いた蒸着装置
KR20150069833A (ko) * 2013-12-16 2015-06-24 삼성디스플레이 주식회사 증발장치
KR20190023228A (ko) * 2017-08-28 2019-03-08 주식회사 선익시스템 선형증발원, 이를 구비한 증착장치 및 이를 이용하는 증착방법
KR20220046983A (ko) * 2020-10-08 2022-04-15 엘지전자 주식회사 선형 증발원
KR20220090334A (ko) * 2020-12-22 2022-06-29 (주)데포랩 선형 증발원의 도가니

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101608586B1 (ko) 2014-07-10 2016-04-04 주식회사 야스 박막 균일도를 균일하게 유지하는 선형 증발원

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011127217A (ja) * 2009-12-17 2011-06-30 Samsung Mobile Display Co Ltd 線形蒸発源及びそれを用いた蒸着装置
KR20150069833A (ko) * 2013-12-16 2015-06-24 삼성디스플레이 주식회사 증발장치
KR20190023228A (ko) * 2017-08-28 2019-03-08 주식회사 선익시스템 선형증발원, 이를 구비한 증착장치 및 이를 이용하는 증착방법
KR20220046983A (ko) * 2020-10-08 2022-04-15 엘지전자 주식회사 선형 증발원
KR20220090334A (ko) * 2020-12-22 2022-06-29 (주)데포랩 선형 증발원의 도가니

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