WO2024009585A1 - 金属化フィルムおよびフィルムコンデンサ - Google Patents

金属化フィルムおよびフィルムコンデンサ Download PDF

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Publication number
WO2024009585A1
WO2024009585A1 PCT/JP2023/015361 JP2023015361W WO2024009585A1 WO 2024009585 A1 WO2024009585 A1 WO 2024009585A1 JP 2023015361 W JP2023015361 W JP 2023015361W WO 2024009585 A1 WO2024009585 A1 WO 2024009585A1
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WIPO (PCT)
Prior art keywords
film
metal vapor
metallized
width
electrode
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PCT/JP2023/015361
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English (en)
French (fr)
Japanese (ja)
Inventor
智久 内田
智生 稲倉
甲児 ▲高▼垣
晃 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Shizuki Electric Co Inc
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Murata Manufacturing Co Ltd
Shizuki Electric Co Inc
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Priority to JP2024531925A priority Critical patent/JP7823194B2/ja
Publication of WO2024009585A1 publication Critical patent/WO2024009585A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/32Wound capacitors

Definitions

  • the present invention relates to metallized films and film capacitors.
  • Patent Document 1 describes a metallized film in which a metal layer is formed on at least one surface of a polymer film, and a metallized film capacitor made of the metallized film.
  • the metallized film described in Patent Document 1 has a portion on one end of one surface of the metallized film where no metal layer is formed, a portion where a metal layer is formed, and a portion where the metal layer is formed.
  • the boundary with the unformed portion has a wavy shape.
  • Patent Document 1 The metallized film and metallized film capacitor described in Patent Document 1 still have room for improvement in terms of suppressing short circuits while suppressing a decrease in capacitance.
  • the present invention provides a metallized film and a film capacitor that can suppress short circuits while suppressing a decrease in capacitance.
  • the metallized film according to one aspect of the present invention is dielectric film; a metal vapor-deposited electrode formed on the surface of the dielectric film; Equipped with The metal vapor-deposited electrode is arranged such that an insulating margin extending in the longitudinal direction of the dielectric film is provided at one end in the width direction of the dielectric film,
  • the metal vapor deposited electrode has a plurality of convex portions facing the insulation margin at an end facing the insulation margin, The plurality of convex portions have flat portions along the direction in which the insulating margin extends.
  • the film capacitor according to one embodiment of the present invention is A rolled body constituted by the above-mentioned metallized film, a pair of end face electrodes disposed at both ends of the metallized film; Equipped with
  • a metallized film and a film capacitor are provided that can suppress a short circuit while suppressing a decrease in capacitance.
  • FIG. 1 A perspective view showing a film capacitor according to Embodiment 1 of the present invention Schematic diagram showing a metallized film according to Embodiment 1 of the present invention An enlarged view of area E1 in FIG. 2A A diagram showing simulation results of displacement of a metallized film having a metal vapor-deposited electrode with no convex portions formed. An enlarged view of region R1 in FIG. 3A A diagram showing the simulation results of the amount of displacement of a metallized film having a metal vapor-deposited electrode with a convex portion formed therein. An enlarged view of region R2 in FIG. 3C A diagram schematically showing a cross section of the film capacitor in Figure 1.
  • FIG. 4A A schematic cross-sectional view showing a state in which the metal vapor-deposited electrode and dielectric film of the film capacitor 1 in FIG. 4A are shrunk.
  • Schematic diagram showing a metallized film according to Modification 2 of Embodiment 1 An enlarged view of area E2 in FIG.
  • Film capacitors are known, which are formed by winding or laminating metallized films in which metal vapor-deposited electrodes are formed on the surface of dielectric films.
  • a voltage is applied to the film capacitor, the temperature of the metal vapor-deposited electrode formed on the surface of the dielectric film increases.
  • the metal-deposited electrode which has risen in temperature, is cooled down, the metal-deposited electrode contracts, creating gaps between the laminated dielectric films, and reducing the capacitance of the film capacitor.
  • the dielectric film vibrates when a voltage is applied due to the gap between the dielectric films, resulting in so-called "squeal".
  • the boundary between the part of the polymer film where the metal layer is formed and the part where the metal layer is not formed is It is formed in a wavy shape.
  • the boundary has a wave-like shape, the electric field is concentrated at the top of the wave due to the edge effect.
  • the distance between the top portion of the waveform and the end face electrode of the film capacitor is smaller than other portions. Therefore, there is a problem in that a short circuit occurs between the corrugated top portion of the metal layer where the electric field is concentrated and the end electrode.
  • the present inventors have studied metallized films and film capacitors that can suppress the occurrence of short circuits while suppressing a decrease in capacitance of film capacitors, and have arrived at the following invention.
  • FIG. 1 is a perspective view showing a film capacitor 1 according to Embodiment 1 of the present invention.
  • FIG. 2A is a schematic diagram showing the metallized film 11 according to the first embodiment of the present invention.
  • FIG. 2B is an enlarged view of region E1 in FIG. 2A.
  • the film capacitor 1 includes a wound body 10 and a pair of end surface electrodes 20 formed at both ends of the wound body 10.
  • the wound body 10 is formed by laminating or winding metallized films 11, which will be described later with reference to FIGS. 2A and 2B.
  • the pair of end electrodes 20 are formed by spraying a metal such as aluminum or zinc onto both ends of the wound body 10.
  • the metallized film 11 is a film in which a metal vapor-deposited electrode 13 is formed on the surface of a dielectric film 12.
  • the dielectric film 12 is, for example, a plastic film containing a thermoplastic resin such as polyethylene terephthalate, polypropylene, polyphenylene sulfide, or polyethylene naphthalate, or a hydroxyl group (OH group) possessed by the first organic material and an isocyanate possessed by the second organic material. It is formed from a plastic film containing a thermosetting resin such as a cured product obtained by reacting with a group (NCO group).
  • the metal vapor deposited electrode 13 is made of metal such as aluminum or zinc, for example.
  • the metal vapor-deposited electrode 13 is an electrode connected to one of the first end electrodes 21 of the end electrodes 20 of the film capacitor 1 .
  • the metal vapor-deposited electrode 13 is arranged such that an insulating margin 16 extending in the longitudinal direction L of the dielectric film 12 is provided at one end 12a of the dielectric film 12 in the width direction W.
  • the insulation margin 16 is a portion of the surface of the dielectric film 12 where the metal vapor-deposited electrode 13 is not formed.
  • the insulating margin 16 is provided for the purpose of preventing the end surface electrode 20 from coming into contact with the other second end surface electrode 22 and from short circuiting.
  • the convex portion 14 is formed in a rectangular shape.
  • each of the plurality of convex portions 14 has a flat portion 14a that is flat along the direction in which the insulating margin 16 extends (longitudinal direction L).
  • the flat portion 14a is a portion of the convex portion 14 facing the insulation margin 16.
  • the plurality of convex portions 14 are arranged at intervals along the longitudinal direction L.
  • the intervals between the plurality of convex portions 14 may be equal or different.
  • a plurality of convex portions 14 are arranged at equal intervals.
  • the plurality of convex portions 14 are arranged at intervals cl.
  • the length d1 of the flat portion 14a of each convex portion 14 is the same length d1.
  • the length d1 of the flat portion 14a can be formed, for example, from 0.7 mm to 1.5 mm along the longitudinal direction L of the dielectric film 12.
  • the lengths d1 of the flat portions 14a may not all be the same length, and may be different lengths within the range of 0.7 mm or more and 1.5 mm or less.
  • FIG. 3A is a diagram showing the simulation results of the amount of displacement of the metallized film 11 having the metal vapor-deposited electrode 13 without the convex portion 14 formed therein.
  • FIG. 3B is an enlarged view of region R1 in FIG. 3A.
  • FIG. 3C is a diagram showing a simulation result of the amount of displacement of the metallized film 11 having the metal vapor-deposited electrode 13 in which the convex portion 14 is formed.
  • FIG. 3D is an enlarged view of region R2 in FIG. 3C.
  • a metal vapor deposited electrode 13 is formed on the right side of the drawing, and an insulating margin 16 is provided on the left side of the drawing.
  • 3A to 3D show the results of a simulation regarding the amount of displacement of the metallized film 11 with respect to temperature when a voltage is applied to the metallized film 11.
  • analysis simulation software Femtet (registered trademark) manufactured by Murata Software Co., Ltd. was used.
  • the calculation item was applied analysis to calculate the amount of displacement with respect to temperature, the mode was steady analysis, and calculations were made for the case where the temperature was changed from -40°C to 125°C.
  • FIG. 4A is a diagram schematically showing a local cross section of the film capacitor 1 of FIG. 1.
  • FIG. 4B is a schematic cross-sectional view showing a state in which the metal vapor deposited electrode 13 and the dielectric film 12 of the film capacitor 1 of FIG. 4A are contracted.
  • a pair of metallized films 11 are stacked.
  • the metal vapor deposited electrode 213 of one metallized film 211 is connected to the first end face electrode 21, and the metal vapor deposited electrode 313 of the other metallized film 311 is connected to the other second end face electrode 22.
  • a portion where the two metal vapor-deposited electrodes 213, 313 overlap is an effective electrode portion that is effective as an electrode of the film capacitor 1, and has an effective electrode width EW1.
  • the temperature of the metal vapor-deposited electrodes 213, 313, especially the ends 213a, 313a increases.
  • the metal vapor deposited electrodes 213 and 313 contract in the direction of arrow S1 in FIG. 4A.
  • a strong force due to thermal contraction of the metal vapor deposited electrodes 213, 313 is applied near the ends 213a, 313a of the metal vapor deposited electrodes 213, 313 shown in region R1 of FIG. 4A.
  • the dielectric film 12 is pulled by the force of contraction of the metal vapor deposited electrodes 213, 313.
  • a gap Sp is formed between the pair of metallized films 11, as shown in FIG. 4B. If a gap Sp is formed between the metallized films 11, the effective electrode width of the effective electrode portion of the film capacitor 1 becomes a width EW2 smaller than the width EW1, resulting in a decrease in the capacitance of the film capacitor 1.
  • FIG. 5 is a table showing the results of how much the effective electrode width changed before and after applying voltage in the film capacitor 1 formed of the metallized films of the comparative example and the example.
  • the amount of change in the effective electrode width indicates the ratio of how much the effective electrode width EW2 after applying the electrode to the film capacitor 1 has decreased with respect to the effective electrode width EW1 before applying the voltage to the film capacitor 1. .
  • C 0 be the reference capacitance of the film capacitor 1 at a temperature of 25° C.
  • C 1 be the capacitance when the temperature is changed
  • a metallized film having a metal vapor-deposited electrode without a protrusion was used.
  • the end of the metal vapor-deposited electrode on the insulation margin side is formed into a straight line.
  • an insulation margin of 2.0 mm width is provided in the comparative metallized film.
  • the metallized film 11 described in Embodiment 1 and having the metal vapor-deposited electrode 13 on which a plurality of convex portions 14 were formed was used.
  • the height h1 (see FIG. 2B), the length d1 (see FIG. 2B) of the convex portion 14, and the distance between the flat portion 14a of the convex portion 14 and one end 12a of the dielectric film 12 are determined.
  • the margin width md (see FIG. 2A) and the interval cl between adjacent convex portions 14 were changed.
  • Example 1-1 the height h1 of the convex part 14 is 0.10 mm, the length d1 of the flat part 14a of the convex part 14 is 0.7 mm, the margin width md is 1.90 mm, and the interval cl between the convex parts 14.
  • a metallized film 11 with a diameter of 1.4 mm was used.
  • Example 1-2 the height h1 of the convex part 14 is 0.30 mm, the length d1 of the flat part 14a of the convex part 14 is 1.5 mm, the margin width md is 1.70 mm, and the interval cl between the convex parts 14.
  • a metallized film 11 with a diameter of 0.6 mm was used.
  • Example 1-3 the height h1 of the convex part 14 is 0.15 mm, the length d1 of the flat part 14a of the convex part 14 is 1.0 mm, the margin width md is 1.35 mm, and the interval cl between the convex parts 14.
  • a metallized film 11 with a diameter of 1.1 mm was used.
  • the reduction rate of the effective electrode width (1-EW2/EW1) is 1.8% in the comparative example, whereas in Examples 1-1 to 1-3, , 0.05% to 0.30%, which is smaller than that of the comparative example.
  • the concentration of heat on the end portion 13a of the metal vapor deposited electrode 13 is suppressed, and the degree of contraction of the metal vapor deposited electrode 13 is reduced, so that the gap is reduced.
  • the generation of Sp can be suppressed. Therefore, in Examples 1-1 to 1-3, the decrease in capacitance of the film capacitor 1 can be suppressed compared to the comparative example.
  • the metallized film 11 includes a dielectric film 12 and a metal vapor-deposited electrode 13.
  • the metal vapor-deposited electrode 13 is formed on the surface of the dielectric film 12, and is arranged so that an insulation margin 16 extending in the longitudinal direction L of the dielectric film 12 is provided at one end 12a of the dielectric film 12 in the width direction W. ing.
  • the metal vapor deposited electrode 13 has a plurality of protrusions 14 facing the insulation margin 16 at an end 13 a of the metal vapor deposition electrode 13 facing the insulation margin 16 , and the plurality of protrusions 14 extend along the direction in which the insulation margin 16 extends. It has a flat flat portion 14a.
  • the plurality of convex portions 14 are arranged at intervals in the longitudinal direction L of the dielectric film 12.
  • the length d1 of the flat portion 14a is 0.7 mm or more and 1.5 mm or less.
  • the effect of suppressing short circuits can be further improved.
  • concentration of the electric field can be suppressed and occurrence of short circuit can be suppressed.
  • concentration of heat can be suppressed, and generation of a gap Sp between the dielectric films 12 can be suppressed.
  • the film capacitor 1 includes a wound body 10 made of the metallized film 11 described above, and a pair of end surface electrodes 20 arranged at both ends of the wound body 10.
  • FIG. 6 is a schematic diagram showing a metallized film 111 according to Modification 1 of Embodiment 1.
  • the metal vapor deposition electrode 113 may include a plurality of divided electrodes 113b.
  • the plurality of divided electrodes 113b are formed by dividing the metal vapor deposited electrode 113 using slits 117 provided along the width direction W of the dielectric film 112.
  • Each of the plurality of divided electrodes 113b has one protrusion 114.
  • one convex portion 114 that protrudes toward one end 112a of the dielectric film 112 is provided at the end 113a of each divided electrode 113b on the insulating margin 116 side.
  • the metal vapor-deposited electrode 113 has a strip-shaped connection portion 118 extending in the longitudinal direction at the other end 112b of the dielectric film 112 in the width direction W.
  • the connecting portion 118 is a portion used to electrically connect the end face electrode of the film capacitor and the metal vapor deposited electrode 113.
  • Each of the plurality of divided electrodes 113b is electrically connected to the connection portion 118 via a fuse 119.
  • a film capacitor formed using the metallized film 111 can have a safety function, and safety can be improved.
  • FIG. 7 is a table showing the results of how much the effective electrode width changed before and after applying voltage in the film capacitor formed by the metallized film 111 of Modification 1.
  • the height h2 and width d2 of the protrusion 114, the margin width md2 between the flat part 114a of the protrusion 114 and one end 112a of the dielectric film 12, the interval between adjacent protrusions cl2, and the slit width s2 are changed.
  • the amount of change in effective electrode width was measured.
  • the effective electrode width was calculated using the method described in Embodiment 1.
  • the comparative example is similar to that described in Embodiment 1.
  • Example 2-1 the height h2 of the convex part 114 is 0.10 mm, the length d1 of the flat part 114a of the convex part 114 is 0.7 mm, the margin width md2 is 1.90 mm, and the interval cl2 of the convex part 114 is A metallized film 11 with a diameter of 1.4 mm and a slit width s2 of 0.1 mm was used.
  • Example 2-2 the height h2 of the convex portion 114 is 0.30 mm, the length d1 of the flat portion 114a of the convex portion 114 is 1.5 mm, the margin width md2 is 1.70 mm, and the interval cl2 between the convex portions 114 is A metallized film 11 with a diameter of 0.6 mm and a slit width s2 of 0.1 mm was used.
  • Example 2-3 the height h2 of the convex part 114 is 0.15 mm, the length d1 of the flat part 114a of the convex part 114 is 1.0 mm, the margin width md2 is 1.35 mm, and the interval cl2 of the convex part 114 is A metallized film 11 with a diameter of 1.1 mm and a slit width s2 of 0.1 mm was used.
  • the reduction rate of the effective electrode width is the smallest compared to the comparative example, and it is possible to suppress the decrease in capacitance of the film capacitor. .
  • FIG. 8A is a schematic diagram showing a metallized film 411 according to Modification 2 of Embodiment 1.
  • FIG. 8B is an enlarged view of region E2 in FIG. 8A.
  • the convex portion 414 of the metal vapor-deposited electrode 413 is formed so that the width becomes wider toward the flat portion 414a at the tip. That is, the width da1 of the convex portion 414 on the flat portion 414a side is formed larger than the width db1 of the metal vapor deposited electrode 413 on the end portion 413a side.
  • FIG. 9 is a table showing the results of how much the effective electrode width changed before and after applying voltage in the film capacitor formed by the metallized film 411 of Modification 2.
  • the amount of change in effective electrode width was measured.
  • the effective electrode width was calculated using the method described in Embodiment 1.
  • the comparative example is similar to that described in Embodiment 1.
  • Example 3-1 the height h3 is 0.10 mm, the width da1 on the flat portion 414a side is 1.0 mm, the width db1 on the end portion 413a side is 0.88 mm, the margin width md3 is 1.90 mm, and the interval cl3.
  • a metallized film 11 with a diameter of 1.1 mm was used.
  • Example 3-2 the height h3 is 0.30 mm, the width da1 on the flat portion 414a side is 1.0 mm, the width db1 on the end portion 413a side is 0.65 mm, the margin width md3 is 1.70 mm, and the interval cl3.
  • a metallized film 11 with a diameter of 1.1 mm was used.
  • Example 3-3 the height h3 is 0.15 mm, the width da1 on the flat portion 414a side is 1.0 mm, the width db1 on the end portion 413a side is 0.83 mm, the margin width md3 is 1.35 mm, and the interval cl3.
  • a metallized film 11 with a diameter of 1.1 mm was used.
  • the reduction rate of the effective electrode width is the smallest compared to the comparative example, and it is possible to suppress the decrease in capacitance of the film capacitor. .
  • FIG. 10A is a schematic diagram showing a metallized film 511 according to Modification 3 of Embodiment 1.
  • FIG. 10B is an enlarged view of region E3 in FIG. 10A.
  • the convex portion 514 of the metal vapor-deposited electrode 513 is formed so that the width becomes narrower toward the flat portion 514a at the tip. That is, the width da2 of the convex portion 514 on the flat portion 514a side is formed to be larger than the width db2 of the metal vapor deposited electrode 513 on the end portion 513a side.
  • FIG. 11 is a table showing the results of how much the effective electrode width changed before and after applying voltage in the film capacitor formed by the metallized film 511 of Modification 3.
  • the amount of change in effective electrode width was measured.
  • the effective electrode width was calculated using the method described in Embodiment 1.
  • the comparative example is similar to that described in Embodiment 1.
  • Example 4-1 the height h4 is 0.10 mm, the width da2 on the flat portion 514a side is 1.0 mm, the width db2 on the end portion 513 side is 1.1 mm, the margin width md4 is 1.90 mm, and the interval cl4 A metallized film 11 with a diameter of 1.1 mm was used.
  • Example 4-2 the height h4 is 0.30 mm, the width da2 on the flat portion 514a side is 1.0 mm, the width db2 on the end portion 513 side is 1.3 mm, the margin width md4 is 1.70 mm, and the interval cl4 A metallized film 11 with a diameter of 1.1 mm was used.
  • Example 4-3 the height h4 is 0.15 mm, the width da2 on the flat portion 514a side is 1.0 mm, the width db2 on the end portion 513 side is 1.2 mm, the margin width md4 is 1.35 mm, and the interval cl4 A metallized film 11 with a diameter of 1.1 mm was used.
  • Example 4-4 the height h4 is 0.10 mm, the width da2 on the flat portion 514a side is 1.0 mm, the width db2 on the end portion 513 side is 2.1 mm, the margin width md4 is 1.90 mm, and the interval cl4 A metallized film 11 with a diameter of 1.1 mm was used.
  • the reduction rate of the effective electrode width is the smallest compared to the comparative example, and it is possible to suppress the decrease in capacitance of the film capacitor. .
  • the shape of the convex portion 14 is not limited to a rectangular shape.
  • the corners of the convex portion 14 may be chamfered.
  • the metallized film of the present invention includes a dielectric film and a metal vapor-deposited electrode formed on the surface of the dielectric film, and the metal vapor-deposited electrode is provided with a dielectric film at one end in the width direction of the dielectric film.
  • the metal vapor-deposited electrode has a plurality of protrusions facing the insulating margin at an end facing the insulating margin, and the plurality of protrusions are arranged so as to provide an insulating margin extending in the longitudinal direction of the insulating margin. It has a flat portion along the extending direction.
  • the plurality of convex portions may be arranged at intervals from each other in the longitudinal direction of the dielectric film.
  • the length of the flat portion may be 0.7 mm or more and 1.5 mm or less.
  • the metallized electrode includes a plurality of divided electrodes divided by slits provided along the width direction of the dielectric film, and a plurality of divided electrodes. Each of the divided electrodes may have one of the protrusions.
  • the metallized electrode has a strip-shaped connection portion extending in the longitudinal direction at the other end in the width direction of the dielectric film, and each of the plurality of divided electrodes has a connection portion. It may be electrically connected to.
  • the film capacitor of the present invention includes a wound body made of the metallized film of any one of (1) to (5), and end face electrodes arranged at both ends of the metallized film.
  • the present invention can be broadly applied to film capacitors and metallized films for forming film capacitors.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
PCT/JP2023/015361 2022-07-07 2023-04-17 金属化フィルムおよびフィルムコンデンサ Ceased WO2024009585A1 (ja)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286988A (ja) * 2005-03-31 2006-10-19 Nippon Chemicon Corp 金属化フィルムコンデンサ
JP2009188001A (ja) * 2008-02-04 2009-08-20 Toray Ind Inc 金属化フィルム及び金属化フィルムコンデンサ
JP2009200191A (ja) * 2008-02-21 2009-09-03 Soshin Electric Co Ltd フィルムコンデンサ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222127A (ja) 2011-04-08 2012-11-12 Okaya Electric Ind Co Ltd 金属化フィルムコンデンサ
JP2012227401A (ja) 2011-04-21 2012-11-15 Okaya Electric Ind Co Ltd 金属化フィルム及び金属化フィルムコンデンサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006286988A (ja) * 2005-03-31 2006-10-19 Nippon Chemicon Corp 金属化フィルムコンデンサ
JP2009188001A (ja) * 2008-02-04 2009-08-20 Toray Ind Inc 金属化フィルム及び金属化フィルムコンデンサ
JP2009200191A (ja) * 2008-02-21 2009-09-03 Soshin Electric Co Ltd フィルムコンデンサ

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