WO2024005273A1 - Procédé et dispositif de formation d'un paquet de skyrmions à l'aide d'un courant - Google Patents

Procédé et dispositif de formation d'un paquet de skyrmions à l'aide d'un courant Download PDF

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Publication number
WO2024005273A1
WO2024005273A1 PCT/KR2022/016718 KR2022016718W WO2024005273A1 WO 2024005273 A1 WO2024005273 A1 WO 2024005273A1 KR 2022016718 W KR2022016718 W KR 2022016718W WO 2024005273 A1 WO2024005273 A1 WO 2024005273A1
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skyrmion
magnetic layer
bag
current
generating
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PCT/KR2022/016718
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English (en)
Korean (ko)
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이기석
한희성
정대한
김강휘
정수영
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울산과학기술원
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Publication of WO2024005273A1 publication Critical patent/WO2024005273A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • the present invention relates to a method and device for forming a skyrmion bag using electric current, and more specifically, to a technology for effectively generating a skyrmion bag by applying electric current to a ferromagnetic material.
  • One example is research on skyrmion-based magnetic memory devices.
  • a skyrmion is a spin structure in the form of particles in which spins are arranged in a vortex-like spiral, and logic operations are performed by corresponding to digital codes in which the high level of the pulse voltage is set to 1 and the low level to 0 in the memory device. It can be designed to do so. Furthermore, a multi-bit operation circuit is implemented using a skyrmion back as a spin structure in which skyrmions are overlapped in various forms.
  • skyrmions are generated only in some limited situations where asymmetric exchange or Dzyaloshinskii-Moriya interaction (DMI) interaction is strong, and skyrmion bags can also be generated in limited situations.
  • DMI Dzyaloshinskii-Moriya interaction
  • the embodiments of this specification are proposed to solve the above-mentioned problems and propose a method and device for forming a skyrmion bag using current and structure.
  • a method of generating a skyrmion bag to achieve the above-described problem includes forming magnetization in a first direction in a first magnetic layer; forming magnetization in a second direction in the second magnetic layer; Applying a current to the first magnetic layer to cause electrons to move in the first direction, thereby generating a first skyrmion; and applying a current to the first magnetic layer to cause electrons to move in the second direction, thereby generating a second skyrmion inside the first skyrmion.
  • a method of generating a skyrmion bag to achieve another problem described above includes applying a magnetic field in the second direction to the first magnetic layer; Confirming the size of the first skyrmion; If the size of the first skyrmion is greater than or equal to a threshold, the method further includes blocking the magnetic field.
  • a method of generating a skyrmion bag to achieve another problem described above includes applying a current to the first magnetic layer to cause electrons to move in the second direction, thereby forming the third skyrmion inside the first skyrmion. It further includes a generating step.
  • a method of generating a skyrmion bag to achieve another problem described above further includes the step of applying a pulse current to generate a plurality of skyrmions inside the first skyrmion.
  • a method of generating a skyrmion bag to achieve another task described above further includes the step of moving the second skyrmion generated inside the first skyrmion.
  • the step of moving the second skyrmion generated inside the first skyrmion to achieve another task described above includes applying a current to the second skyrmion to move electrons in the first direction. do.
  • the step of moving the second skyrmion generated inside the first skyrmion to achieve another task described above includes applying a horizontal magnetic field to the first magnetic layer.
  • a skyrmion bag generating device for achieving the above-described problem includes a current applicator that applies a current; A magnetic field application unit that applies a magnetic field; Heavy metal layer; A first magnetic layer in which magnetization in a first direction is formed, a first skyrmion is generated based on a current and a magnetic field, and a second skyrmion is generated inside the first skyrmion based on the current; and a second magnetic layer in which magnetization in a second direction is formed.
  • a skyrmion bag generating device for achieving another problem described above includes forming magnetization in the first direction in the first magnetic layer, forming magnetization in the second direction in the second magnetic layer, and forming magnetization in the second direction in the first magnetic layer.
  • a current is applied to cause electrons to move in the first direction to generate the first skyrmion, and a current is applied to the first magnetic layer to cause electrons to move in the second direction to generate the first skyrmion.
  • the control unit for achieving another task described above applies a magnetic field to the first magnetic layer in the second direction, checks the size of the first skyrmion, and determines that the size of the first skyrmion is a threshold value. If it is above, the magnetic field is blocked.
  • the control unit for achieving another task described above applies a current to the first magnetic layer to cause electrons to move in the second direction, thereby generating the third skyrmion inside the first skyrmion.
  • the control unit to achieve another task described above moves the second skyrmion generated inside the first skyrmion.
  • the heavy metal layer to achieve another problem described above is formed between the first magnetic layer and the second magnetic layer.
  • Dzyaloshinskii-Moriya interaction (DMI) effect occurs by the heavy metal layer, the first magnetic layer, and the second magnetic layer.
  • a skyrmion bag can be created using a relatively simple method.
  • the generation of multiple skyrmions can be controlled.
  • Figure 1 is a diagram schematically showing the shape of a skyrmion bag.
  • Figure 2 is a diagram schematically showing a structure for generating a skyrmion bag according to an embodiment of the present invention.
  • Figures 3a to 3c are diagrams showing the principle of skyrmion bag generation according to electron flow according to an embodiment of the present invention.
  • Figure 4 is a diagram showing a graph regarding pulse current applied by a current applicator according to an embodiment of the present invention.
  • Figures 5a to 5f are diagrams showing the process of generating a skyrmion according to a pulse current applied according to an embodiment of the present invention.
  • Figures 6a to 6f are diagrams showing a process in which skyrmions are generated in the first magnetic layer according to a pulse current applied according to an embodiment of the present invention.
  • Figure 7 is a flow chart showing the process of generating skyrmions by the skyrmion bag generating device according to an embodiment of the present invention.
  • Figure 8 is a flowchart showing the process of generating a skyrmion bag by the skyrmion bag generating device according to an embodiment of the present invention.
  • Figures 9A to 9E are diagrams showing an embodiment of a method for moving the second skyrmion.
  • Figure 10 is a diagram showing the block configuration of a skyrmion bag generating device according to an embodiment of the present invention.
  • first and second are used not in a limiting sense but for the purpose of distinguishing one component from another component.
  • Skyrmion according to the present invention is a spin structure in the form of particles in which spins are arranged in a vortex-shaped spiral, and may mean a magnetic skyrmion.
  • 1 is a diagram schematically showing the shape of a skyrmion bag.
  • Skyrmion bag is a general term for spin structures in which skyrmions are overlapped in various forms, and can have different dynamic movements depending on the number and shape of overlapped skyrmions.
  • a stable highly multi-skyrmion configuration structure in which an arbitrary number of skyrmions are included within a larger skyrmion can be defined as a skyrmion bag.
  • skyrmion bags can be named by a combination of S and the number inside the parentheses.
  • S refers to the outer skyrmion
  • the number inside the parentheses may refer to the number of skyrmions located inside the skyrmion.
  • a single-structure skyrmion can be designed to perform logical operations in a memory device by corresponding to a digital code that sets the high level of the pulse voltage to 1 and the low level to 0, the skyrmion back is a multi-bit Logical operations can be performed with elements.
  • Figure 2 is a diagram schematically showing a structure for generating a skyrmion bag according to an embodiment of the present invention.
  • Skyrmions are generated only in some limited situations where the Dzyaloshinskii-Moriya interaction (DMI) effect is strong, and an appropriate structure is required to generate a skyrmion bag, which is a multiple skyrmion.
  • DMI Dzyaloshinskii-Moriya interaction
  • the structure for generating a skyrmion bag may be composed of a first magnetic layer 21, a second magnetic layer 23, a first non-magnetic layer 25, and a second non-magnetic layer 27, and the structure and the current applying unit 31 ) can create skyrmions.
  • the first magnetic layer 21 and the second magnetic layer 23 are ferromagnetic materials such as sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), pulse laser deposition (PLD), and electron beam evaporator (E-beam). Through processes such as evaporator, it can be formed as a single-layer structure for interfacial Dzyaloshinskii-Moriya interaction (DMI) or as a multi-layer structure.
  • the first magnetic layer 21 and the second magnetic layer 23 have a single-layer structure, and the thickness may range from several ⁇ to several nm, for example, and the line width may range from several tens to several nanometers, for example. It may range from nm to several ⁇ m.
  • This first magnetic layer 21 is thinner than the second magnetic layer 23 and can function as a free layer whose magnetic structure can be easily changed by current.
  • the second magnetic layer 23 is a ferromagnetic or antiferromagnetic material, and has a thicker thickness than the first magnetic layer 21, so that it can serve as a fixed layer in which torque due to current does not significantly affect the magnetic structure. The magnetic structure effect of torque due to such current will be described later.
  • the first magnetic layer 21 is magnetized in a first direction, a first skyrmion is generated based on the current and a magnetic field, and a second skyrmion is generated inside the first skyrmion based on the current. You can.
  • the second magnetic layer 23 may be magnetized in a second direction. For example, if the magnetization in the first direction is UP, the magnetization in the second direction may be Down.
  • At least one of the first non-magnetic layer 25 and the second non-magnetic layer 27 may be made of a heavy metal material.
  • the heavy metal layer can generate DMI at the interface with the free layer to maintain skyrmions.
  • the other one may be made of an oxide or a heavy metal that generates DMI in a different direction from the above heavy metal.
  • the heavy metal layer for example, any one or a mixture of two or more of platinum, tantalum, iridium, tantalum, hafnium, tungsten, and palladium can be used, and a single layer can be formed through processes such as sputtering, MBE, ALD, and PLD electron beam evaporator. It may be formed as a structured or multi-layered structure.
  • the thickness of the heavy metal layer may range from several nanometers to several tens of nanometers, and its line width may range from several tens of nanometers to several micrometers, for example.
  • a second non-magnetic layer 27 may be deposited between the first magnetic layer 21 and the second magnetic layer 23, distinguishing the free layer from the fixed layer, and the non-magnetic layer on the free layer protecting the very thin free layer from oxidation. It can perform a protective function.
  • the structure for creating a skyrmion bag is shown as having four layers for convenience of explanation. However, it changes depending on the deposition order of the magnetic layer and the non-magnetic layer, and even if deposited in the same order, the direction varies depending on the type of non-magnetic layer used. It may vary.
  • the first magnetic layer 21 is magnetized in the first direction
  • the second magnetic layer 23 is magnetized in the second direction
  • the skyrmion bag is formed in the first magnetic layer 21. This may be a structure that can be created.
  • Figures 3a to 3c are diagrams showing the principle of skyrmion bag generation according to electron flow according to an embodiment of the present invention.
  • the structure for generating the skyrmion bag in Figure 3 is shown as a three-layer structure for convenience of explanation.
  • Figure 3a shows a case where electrons move from the first magnetic layer 21 and the second magnetic layer 23 to the electrode of the current applicator 31
  • Figure 3b shows the case where electrons move from the electrode of the current applicator 31 to the first magnetic layer 23. This shows a case where electrons move to the magnetic layer 21 and the second magnetic layer 23.
  • the magnetic layer can be divided into a free layer and a fixed layer.
  • the first magnetic layer 21 may be composed of a free layer
  • the second magnetic layer 23 may be composed of a fixed layer.
  • the first magnetic layer 21 has weak magnetic anisotropy, so its magnetic structure can easily change.
  • a skyrmion bag may be created or destroyed.
  • the first magnetic layer 21 is a free layer and its magnetic structure can be easily changed. When electrons flow in the free layer, the free layer and electrons can exchange magnetic moments with each other.
  • the second magnetic layer 23 is a fixed layer and has strong magnetic anisotropy, so its magnetic structure may not easily change. Since the magnetic structure of the second magnetic layer 23 does not easily change, electrons with a magnetic moment in a direction similar to that of the pinned layer can easily pass through the pinned layer, but otherwise they may encounter resistance and be reflected back.
  • the electrons when electrons move from the first magnetic layer 21 and the second magnetic layer 23 to the electrode of the current applicator 31, the electrons pass through the fixed layer and have a magnetic moment in the same direction as the magnetization direction of the fixed layer. are aligned and can generate spin transfer torque as they pass through the free layer.
  • the magnetic structure of the free layer can receive a spin transfer torque in the same direction as the fixed layer.
  • This spin transfer torque may mean a torque in which when an electron passes through a magnetic material, the spin of the electron is transferred to the magnetic material and the magnetic moment of the magnetic material rotates in the same direction as the spin of the electron.
  • the first magnetic layer 21 may receive a spin transfer torque in the same magnetization direction as the second magnetic layer 23 and have the magnetization direction of the second magnetic layer 23.
  • the first magnetic layer 21 may receive a spin transfer torque in a magnetization direction opposite to that of the second magnetic layer 23, so that the first magnetic layer 21 may have a magnetization direction opposite to that of the second magnetic layer 23.
  • Figure 3c is a diagram showing the transformation of the magnetic structure of such a magnetic layer.
  • the current applying unit Deformation of the magnetic structure in the second direction, such as the second magnetic layer 23, may occur around the electrode of 31.
  • the heavy metal layer can maintain skyrmions by generating DMI at the interface with the free layer
  • skyrmions with magnetization in the second direction can be generated at the interface of the first magnetic layer 21.
  • the magnetic structure on the interface of the free layer can be modified by changing the direction of electron movement, so multiple skyrmions can be generated.
  • Figure 4 is a diagram showing a graph regarding pulse current applied by a current applicator according to an embodiment of the present invention.
  • the current applicator 31 may generate a skyrmion back or multiple skyrmions by applying a pulse current to the structure. If it is assumed that the current applied by the current applicator 31 is a pulse current as shown in FIG. 4, the first time point 401, the second time point 405, and the third time point depending on the direction and size of the current applied to the structure. It can be divided into (409), the fourth viewpoint (413), the first section (403), the second section (407), and the third section (411).
  • a current is applied by the current applicator 31 to the structure in which the first magnetic layer 21 is magnetized in the first direction and the second magnetic layer 23 is magnetized in the second direction. It can mean the point in time.
  • the first section 403 may be a section in which electrons move from the structure to the electrode of the current applicator 31, that is, a section in which electrons are applied in the first direction.
  • the second point in time 405 may be a point in time when a magnetic field in the second direction is being applied to the structure by the magnetic field applicator or a point in time when electrons begin to be applied in the second direction.
  • the second section 407 may be a section in which electrons move from the electrode of the current applicator 31 to the structure by the current applicator 31, that is, a section in which electrons are applied in the second direction.
  • the third point in time 409 may be a point in time when electrons begin to be applied in the first direction.
  • the third section 411 may be a section in which electrons move from the structure to the electrode of the current applicator 31 by the current applicator 31, that is, a section in which electrons are applied in the first direction.
  • the maximum current in the third section may be smaller than the maximum current in the first section.
  • the fourth time point 413 may mean the time point at which the pulse current ends or the time point at which the cycle ends.
  • Figures 5a to 5f are diagrams showing the process of generating a skyrmion according to a pulse current applied according to an embodiment of the present invention
  • Figures 6a to 6f are diagrams showing the first magnetic layer according to a pulse current applied according to an embodiment of the present invention. This is a diagram showing the process by which a skyrmion is created.
  • the first viewpoint 401 in FIG. 4 corresponds to FIGS. 5A and 6A
  • the first section 403 corresponds to FIGS. 5B and 6B
  • the second viewpoint 405 corresponds to FIGS. 5C and 6C
  • the second section 407 corresponds to FIGS. 5D and 6D
  • the third viewpoint 409 corresponds to FIGS. 5E and 6E
  • the third section 411 corresponds to FIGS. 5F and 6F. there is.
  • FIGS. 5A and 6A in the case of FIG. 5A, the first magnetic layer 21 is magnetized in the first direction, and the second magnetic layer 23 is magnetized in the second direction.
  • This is a diagram showing the direction of magnetization and the direction of movement of electrons when a current is applied to the electrode 35.
  • FIG. 6A is a diagram schematically illustrating the point where the first magnetic layer 21 and the electrode 35 are in contact.
  • FIGS. 5B and 6B in the case of FIG. 5B, when electrons move from the structure to the electrode of the current application unit 31, the current is transferred by the electrode 35 of the current application unit 31.
  • This is a diagram showing the direction of magnetization and the direction of movement of electrons when is applied.
  • magnetic structure deformation may occur in the first magnetic layer 21.
  • FIG. 6B where magnetic structure deformation occurs, it is a diagram schematically illustrating the point where the first magnetic layer 21 and the electrode 35 contact and the first skyrmion 41 generated by the magnetic structure deformation.
  • a magnetic field 33 in the second direction is applied to the structure by a magnetic field application unit.
  • the magnetization deformation area of the first magnetic layer 21 where the magnetic structure deformation occurred may be expanded.
  • FIG. 6C where the magnetic field 33 is applied in the second direction the point where the first magnetic layer 21 and the electrode 35 contact and the expansion of the first skyrmion 41 by the magnetic field 33 are schematically shown. This is a schematic drawing.
  • FIGS. 5D and 6D In the case of FIG. 5D, electrons move from the electrode of the current applicator 31 to the structure by the current applicator 31, and the electrons can be applied in the second direction.
  • the first magnetic layer 21 may receive a spin transfer torque in a magnetization direction opposite to that of the second magnetic layer 23, resulting in magnetic structural deformation having a magnetization direction opposite to that of the second magnetic layer 23.
  • FIG. 6D it is schematically shown that the second skyrmion 43 is generated inside the first skyrmion 41 by the point where the first magnetic layer 21 and the electrode 35 contact and the magnetic field 33. It is a schematic drawing.
  • a skyrmion bag can be created by the first skyrmion 41 and the second skyrmion 43.
  • another type of skyrmion bag can be created by creating an additional skyrmion inside the first skyrmion 41.
  • a method of moving the second skyrmion 43 inside the first skyrmion 41 and generating a third skyrmion again through an electrode will be described later.
  • the maximum current may be smaller than the maximum current applied in 5b and 5b. That is, the magnetic structure of the first magnetic layer 21 is not deformed, and the second skyrmion 43 inside the first skyrmion 41 can move from the electrode 35 due to the repulsive force caused by magnetization.
  • a skyrmion bag having a third skyrmion and multiple skyrmions can be generated by applying current in a manner similar to the method of generating the second skyrmion.
  • the skyrmion bag generating device may form magnetization in the first direction in the first magnetic layer by the magnetic field applicator or the current applicator in step S701.
  • the skyrmion bag generating device may form magnetization in the second direction in the second magnetic layer by the magnetic field applicator or the current applicator in step S703.
  • the skyrmion bag generating device may generate a first skyrmion by applying a current to move electrons in the first direction in step S705. For example, when the current applicator 31 applies current in the second direction, electrons move in the first direction. That is, current can be applied so that electrons move from the first magnetic layer 21 and the second magnetic layer 23 to the electrode of the current applying unit 31.
  • step S705 the skyrmion bag generating device receives a spin transfer torque in the same direction as the magnetization direction of the second magnetic layer at the interface of the first magnetic layer 21 when the electron moves in the first direction, and the first magnetic layer 21 Magnetic structure deformation may occur to generate a first skyrmion having a second magnetization direction.
  • the skyrmion bag generating device may apply a magnetic field to the first magnetic layer 21 in the second direction in step S707. Specifically, a magnetic field may be applied in the second direction to expand the size of the first skyrmion having the second magnetization direction. The magnetization area of the first skyrmion in the second direction may be expanded by the magnetic field.
  • the skyrmion bag generating device can check the size of the first skyrmion in step S709. For example, if the size of the first skyrmion is greater than or equal to a threshold, the magnetic field applied by the magnetic field applicator may be blocked. In this way, a method of generating a first skyrmion and generating multiple skyrmions within the first skyrmion will be described later.
  • Figure 8 is a flowchart showing the process of generating a skyrmion bag by the skyrmion bag generating device according to an embodiment of the present invention.
  • the skyrmion bag generating device can generate at least one skyrmion inside the first skyrmion generated through a series of processes.
  • the skyrmion bag generating device may apply a current to the first magnetic layer to move electrons in the second direction in step S801, thereby generating a second skyrmion inside the first skyrmion.
  • electrons move from the electrode of the current applicator 31 to the structure by the current applicator 31, and the first magnetic layer 21 receives a spin transfer torque in a magnetization direction opposite to that of the second magnetic layer 23.
  • a magnetic structure deformation having an opposite magnetization direction of the second magnetic layer may occur.
  • the skyrmion bag generating device may move the second skyrmion generated inside the first skyrmion in step S803. This is to move the second skyrmion from the position of the electrode of the current application unit and generate the third skyrmion again.
  • the second skyrmion can be moved by applying a current to the second skyrmion so that electrons move in the first direction.
  • the maximum current in step S803 may be smaller than the maximum current in step S705.
  • the skyrmion bag generating device may apply a current to the first magnetic layer to move electrons in the second direction in step S805, thereby generating a third skyrmion inside the first skyrmion. This is the same as the process of creating the second skyrmion.
  • a skyrmion bag with a separate skyrmion inside the first skyrmion can be created in the structure using the skyrmion bag generating device in FIGS. 7 and 8.
  • the magnetization direction of the skyrmion bag may also be changed, which is obvious to those skilled in the art.
  • step S803 the method of first applying a current to the second skyrmion to move electrons in the first direction using an electrode was described above.
  • various methods of moving the second skyrmion generated inside the first skyrmion will be described later.
  • Figures 9A to 9E are diagrams showing an embodiment of a method for moving the second skyrmion.
  • FIG. 9A there may be a method of moving the entire skyrmion bag by applying a horizontal magnetic field 901 to the structure.
  • a different type of skyrmion bag can be created by moving the skyrmion bag and generating a third skyrmion when the electrode is separated from the second skyrmion and is located inside the first skyrmion. You can.
  • FIG. 9B there may be a method of moving the entire skyrmion bag by applying a horizontal current 903 to the structure.
  • a different type of skyrmion bag can be created by moving the skyrmion bag and generating a third skyrmion when the electrode is separated from the second skyrmion and is located inside the first skyrmion. You can.
  • FIG. 9C there may be a method of moving the second skyrmion by applying an alternating magnetic field 905 to the structure and generating a spin wave 907.
  • a different type of skyrmion bag can be created by separating the second skyrmion from the electrode and then generating a third skyrmion when located inside the first skyrmion.
  • the skyrmions can move in a direction where the potential energy is minimized due to the asymmetric potential.
  • the position of the electrode is biased to one side of the first magnetic layer, when a skyrmion is generated, it may move to the center of the first magnetic layer due to a repulsive force due to the waveguide boundary.
  • a different type of skyrmion bag can be created by separating the second skyrmion from the electrode and then generating a third skyrmion when located inside the first skyrmion.
  • Figure 10 is a diagram showing the block configuration of a skyrmion bag generating device according to an embodiment of the present invention.
  • the skyrmion bag generating device 1000 is shown as including a control unit 1010, a current applicator 1020, a magnetic field applicator 1030, and a structure 1040, but is not necessarily limited thereto.
  • the control unit 1010, the current applicator 1020, the magnetic field applicator 1030, and the structure 1040 may be physically independent structures.
  • the control unit 1010 may be configured to generally control the skyrmion bag generating device 1000.
  • the control unit 1010 may include a CPU, RAM, ROM, and a system bus.
  • the control unit 1010 may be implemented with a single CPU or multiple CPUs (or DSP, SoC).
  • the control unit 1010 may be implemented with a digital signal processor (DSP), a microprocessor, or a time controller (TCON) that processes digital signals.
  • DSP digital signal processor
  • TCON time controller
  • control unit 1010 forms magnetization in a first direction in the first magnetic layer, forms magnetization in the second direction in the second magnetic layer, and applies a current to the first magnetic layer to cause electrons to move in the first direction, It can be controlled to generate a first skyrmion, apply a current to the first magnetic layer to move electrons in the second direction, and generate a second skyrmion inside the first skyrmion.
  • the current applicator 1020 may apply current to the structure 1040 to create a skyrmion bag or control its movement.
  • the magnetic field applicator 1030 may apply a magnetic field to the structure 1040 to change the size of the skyrmion or control the movement of the skyrmion.
  • the structure 1040 may include a first magnetic layer, a second magnetic layer, and a heavy metal layer, and a skyrmion bag is formed at the interface of the first magnetic layer based on the control unit 1010, the current applicator 1020, and the magnetic field applicator 1030. can be created.

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Abstract

La présente invention concerne un procédé et un dispositif pour former un paquet de skyrmions à l'aide d'un courant et, plus spécifiquement, une technique pour générer efficacement un paquet de skyrmions par application d'un courant à un matériau ferromagnétique. Le procédé de formation d'un paquet de skyrmions selon un mode de réalisation de la présente invention comprend les étapes consistant à : générer une magnétisation dans une première direction dans une première couche magnétique ; générer une magnétisation dans une deuxième direction dans une deuxième couche magnétique ; générer un premier skyrmion par application d'un courant à la première couche magnétique de telle sorte que des électrons se déplacent dans la première direction ; et générer un deuxième skyrmion à l'intérieur du premier skyrmion par application d'un courant à la première couche magnétique de telle sorte que des électrons se déplacent dans la deuxième direction.
PCT/KR2022/016718 2022-06-28 2022-10-28 Procédé et dispositif de formation d'un paquet de skyrmions à l'aide d'un courant WO2024005273A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
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