WO2024005274A1 - Structure métallique ayant une paroi de domaine magnétique formée et procédé de génération de skyrmion - Google Patents

Structure métallique ayant une paroi de domaine magnétique formée et procédé de génération de skyrmion Download PDF

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Publication number
WO2024005274A1
WO2024005274A1 PCT/KR2022/016724 KR2022016724W WO2024005274A1 WO 2024005274 A1 WO2024005274 A1 WO 2024005274A1 KR 2022016724 W KR2022016724 W KR 2022016724W WO 2024005274 A1 WO2024005274 A1 WO 2024005274A1
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Prior art keywords
skyrmion
domain wall
magnetic domain
metal structure
generating
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PCT/KR2022/016724
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English (en)
Korean (ko)
Inventor
이기석
한희성
정대한
김강휘
정수영
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울산과학기술원
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Priority claimed from KR1020220079269A external-priority patent/KR102671872B1/ko
Application filed by 울산과학기술원 filed Critical 울산과학기술원
Publication of WO2024005274A1 publication Critical patent/WO2024005274A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

Definitions

  • the present invention relates to a metal structure applicable to semiconductor devices, and more specifically, to a metal structure or method for generating or controlling skyrmions present in a ferromagnetic material.
  • One example is research on skyrmion-based magnetic memory devices.
  • 1 is a diagram schematically showing a conventional technique for performing information reading using skyrmions.
  • a skyrmion is a spin structure in the form of particles in which spins are arranged in a vortex-like spiral, and logic operations are performed by corresponding to digital codes in which the high level of the pulse voltage is set to 1 and the low level to 0 in the memory device. It can be designed to do so.
  • the skyrmion (1) can serve as a basic unit (bit) of information storage, and through the movement of the skyrmion (1), the reader (3) as shown in b in FIG. The moment it passes, the value of the logic element bit can be read as 1 and function as a magnetic memory element.
  • skyrmions are generated only in some materials that exhibit a strong asymmetric exchange or Dzyaloshinskii-Moriya interaction (DMI) effect, and even if this DMI effect exists, there are technical limitations in generating skyrmions without controlling the physical properties or structure of the material. There is a downside to this.
  • DMI Dzyaloshinskii-Moriya interaction
  • the embodiment of the present specification is proposed to solve the above-mentioned problems and proposes a metal structure with a magnetic domain wall for skyrmion generation and a skyrmion generation method.
  • the metal structure for achieving the above-described problem includes a heavy metal layer; and a ferromagnetic layer disposed on the heavy metal layer, including a magnetic domain wall, and generating skyrmions based on movement of the magnetic domain wall.
  • the ferromagnetic layer may form magnetization in a first direction in the first part and magnetization in the second direction in the second part.
  • the magnetic domain wall may have a moving speed greater than or equal to a threshold value.
  • a skyrmion generating device for achieving the above-described problem includes the metal structure; And it may include a magnetic field application unit.
  • the skyrmion generating device includes the metal structure; And it may include a current applicator.
  • the method for generating the skyrmion to achieve the above-described problem includes generating a magnetic domain wall in the ferromagnetic layer; moving the magnetic domain wall included in the metal structure; And it may include generating a skyrmion based on the movement of the magnetic domain wall.
  • Creating a magnetic domain wall in the ferromagnetic layer may include forming magnetization in a first direction in a first portion of the ferromagnetic layer; It may include forming magnetization in a second direction in the second portion of the ferromagnetic layer.
  • the step of generating a skyrmion based on the movement of the magnetic domain wall may include ensuring that the moving speed of the magnetic domain wall is greater than or equal to a threshold value.
  • the step of generating the skyrmion based on the movement of the magnetic domain wall includes moving the magnetic domain wall in a first direction to generate a skyrmion, and moving the magnetic domain wall in a second direction to generate the skyrmion. It may include moving in the second direction.
  • the step of moving the magnetic domain wall may include applying a magnetic field to the metal structure.
  • Applying the magnetic field to the metal structure may include applying the magnetic field in a vertical direction to the metal structure.
  • Applying the magnetic field to the metal structure includes applying the magnetic field as a pulse signal; And the step of generating skyrmions based on the movement of the magnetic domain wall may include controlling the number of skyrmions generated based on the pulse signal.
  • the step of moving the magnetic domain wall may include applying a current to the metal structure.
  • Applying the current to the metal structure may include applying the current to the metal structure in a horizontal direction.
  • Applying the current to the metal structure includes applying the current as a pulse signal; And the step of generating skyrmions based on the movement of the magnetic domain wall may include controlling the number of skyrmions generated based on the pulse signal.
  • skyrmions can be generated using a relatively simple structure.
  • the number of skyrmions generated can be controlled.
  • the position of the skyrmion can be controlled.
  • 1 is a diagram schematically showing a conventional technique for performing information reading using skyrmions.
  • Figure 2 is a diagram showing a metal structure for skyrmion generation.
  • Figures 3a and 3b are diagrams showing the main process in which a skyrmion generating device according to an embodiment of the present invention creates a magnetic domain wall in a metal structure and generates skyrmions.
  • Figures 4a and 4b are diagrams showing the main process in which the skyrmion generation device according to an embodiment of the present invention controls the number of generated skyrmions by applying a pulsed magnetic field to a metal structure.
  • Figure 5 is a flowchart showing a skyrmion generation method of the skyrmion generation device according to an embodiment of the present invention.
  • Figure 6 is a diagram showing the process by which the skyrmion generation device moves the magnetic domain wall and controls generation according to an embodiment of the present invention.
  • Figure 7 is a block diagram showing the block configuration of the skyrmion generation device of the present invention.
  • first and second are used not in a limiting sense but for the purpose of distinguishing one component from another component.
  • Figure 2 is a diagram showing a metal structure for skyrmion generation.
  • the metal structure for generating skyrmions in FIG. 2 consists of a heavy metal layer 23 and a ferromagnetic layer 21.
  • the ferromagnetic layer 21 is a material that is strongly magnetized in the direction of the magnetic field when a strong magnetic field is applied from the outside and then remains magnetized even when the external magnetic field disappears.
  • it is an alloy-based magnetic material such as CoFe, CoFeB, etc., or Co2FeSi with perpendicular anisotropy.
  • Heusler alloy-based magnetic materials such as , Co2MnSi, etc. may be used.
  • Such a ferromagnetic layer 21 is formed into a single layer through processes such as sputtering, molecular beam epitaxy (MBE), atomic layer deposition (ALD), pulse laser deposition (PLD), and electron beam evaporator.
  • MBE molecular beam epitaxy
  • ALD atomic layer deposition
  • PLD pulse laser deposition
  • electron beam evaporator As a (mono_layer) structure, it can be formed as a single layer for interfacial Dzyaloshinskii-Moriya interaction (DMI) or as a multilayer structure.
  • DMI interfacial Dzyaloshinskii-Moriya interaction
  • the ferromagnetic layer 21 has a single-layer structure, and its thickness may range from, for example, several ⁇ to several nm, and its line width may range, for example, from several tens of nm to several ⁇ m. You can.
  • any one or a mixture of two or more of platinum, tantalum, iridium, tantalum, hafnium, tungsten, and palladium may be used, and processes such as sputtering, MBE, ALD, and PLD electron beam evaporator may be used as the heavy metal layer 23. It can be formed into a single-layer structure or a multi-layer structure.
  • the thickness of the heavy metal layer 23 may range from several nm to several tens of nm, for example, and its line width may range from several tens of nm to several ⁇ m, for example.
  • the metal structure of the present invention may have fewer limitations in physical properties than in the case where the conventional DMI action is strong, and as will be described later, skyrmions can be generated based on the movement of the magnetic domain walls.
  • Figures 3a and 3b are diagrams showing the main process in which the skyrmion generating device according to an embodiment of the present invention creates a magnetic domain wall in a metal structure and generates skyrmions.
  • These metal structures can create magnetic domain walls in the ferromagnetic layer.
  • the ferromagnetic layer is divided into magnetization zones in various directions. This magnetization region is called a magnetic domain, and the boundary between the magnetic domains can be called a magnetic domain wall.
  • the metal structure may form magnetization in a first direction in the first part 31 of the ferromagnetic layer and magnetization in the second direction in the second part 33.
  • the direction of magnetization in the first direction of the first part 31 may be up, and the direction of magnetization in the second direction of the second part 33 may be down.
  • Such a ferromagnetic layer can generate a plurality of magnetic domains with different directions in the ferromagnetic material by applying an external magnetic field to form magnetization.
  • the first part 31 and the second part 33 each form a magnetic domain, and a magnetic domain wall 35 is created as a boundary of the magnetic domain.
  • skyrmions (1) may be generated in the magnetic domain wall (35).
  • the skyrmion 1 is formed by forming a magnetic domain wall 35, and can be generated by applying a magnetic field or current exceeding a threshold value to a metal structure in which DMI action can occur.
  • skyrmions 1 When a magnetic field or current exceeding a threshold value is applied to a metal structure, skyrmions 1 can be generated.
  • methods for controlling and controlling the number of skyrmions will be described later.
  • Figures 4a and 4b are diagrams showing the main process of controlling the number of skyrmions generated by applying a pulsed magnetic field to a metal structure according to an embodiment of the present invention.
  • the magnetic domain wall in Figure 4b is moving within the metal structure, but is shown centered on the magnetic domain wall.
  • the number of skyrmions generated can be controlled by applying a pulsed magnetic field to a metal structure where a magnetic domain wall is formed and DMI action can occur.
  • a pulsed magnetic field to a metal structure where a magnetic domain wall is formed and DMI action can occur.
  • the moving speed of the magnetic domain wall may vary depending on the direction and strength of the magnetic field, and skyrmions are formed around the magnetic domain wall as shown in Figure 4b. This may or may not be created.
  • the number of skyrmions can be limited by checking the generated skyrmions and limiting the number.
  • the number of skyrmions generated can be controlled.
  • the skyrmion is generated by applying a magnetic field above a threshold or a current above the threshold to the metal structure to move the magnetic domain wall in the first direction, and the skyrmion is generated by applying a magnetic field above the threshold to the metal structure.
  • the magnetic domain wall may be moved in the second direction opposite to the first direction by applying a current below the threshold value.
  • the skyrmion is generated by moving the magnetic domain wall in the first direction by applying a unidirectional magnetic field greater than a threshold or a unidirectional current greater than the threshold to the metal structure, and the skyrmion is generated by moving the magnetic domain wall in the first direction. It can be generated by applying a magnetic field in the other direction greater than a threshold or a current in the other direction greater than the threshold to move the magnetic domain wall in a second direction opposite to the first direction.
  • the number of skyrmions can be controlled regardless of the length of the metal structure.
  • Figure 5 is a flowchart showing a skyrmion generation method of the skyrmion generation device according to an embodiment of the present invention.
  • the skyrmion generating device may generate a magnetic domain wall in a ferromagnetic layer included in a metal structure including a heavy metal layer and a ferromagnetic layer in step S101.
  • the skyrmion generating device may generate a magnetic domain wall by forming magnetization in a first direction in the first part of the ferromagnetic layer and magnetization in the second direction in the second part of the ferromagnetic layer.
  • the skyrmion generating device may apply an up-directed magnetic field to the first part of the ferromagnetic layer, or apply a current to form up-directed magnetization to form up-directed magnetization in the first part.
  • the skyrmion generating device may apply a downward-directed magnetic field to the second part of the ferromagnetic layer, or apply a current to form downward-directed magnetization to form downward-directed magnetization in the second part.
  • the skyrmion generating device may move the magnetic domain wall included in the metal structure in step S103. Specifically, the skyrmion generating device can apply a magnetic field or current to move the magnetic domain wall included in the metal structure.
  • the magnetic domain wall can be moved by applying the magnetic field in a vertical direction to the metal structure.
  • the magnetic domain wall can be moved by applying the current in the horizontal direction of the metal structure.
  • the skyrmion generating device may generate skyrmions based on the movement of the magnetic domain wall included in the metal structure in step S105. For example, the skyrmion generating device can generate skyrmions by ensuring that the moving speed of the magnetic domain wall within the metal structure is greater than or equal to a threshold value. Additionally, the skyrmion generating device can apply a magnetic field above a threshold or a current above a threshold to the metal structure and generate skyrmions at the magnetic domain wall.
  • the skyrmion generation device can control the number of skyrmions generated in step S105.
  • the number of skyrmions generated can be controlled based on the pulse signal. Specifically, when the maximum intensity of the magnetic field of the pulse signal is greater than the threshold, the number of skyrmions generated can be controlled.
  • the number of skyrmions generated can be controlled based on the pulse signal. Specifically, when the maximum intensity of the current of the pulse signal is greater than the threshold, the number of skyrmions generated can be controlled.
  • FIG. 6 is a diagram showing the process by which the skyrmion generation device moves the magnetic domain wall and controls generation according to an embodiment of the present invention.
  • FIG. 6 may correspond to S103 or S105 in FIG. 5.
  • the skyrmion generating device may apply a magnetic field or current to a metal structure including a heavy metal layer and a ferromagnetic layer and having a magnetic domain wall formed thereon.
  • the skyrmion generating device may generate the first skyrmion by moving the magnetic domain wall in the first direction in step S203. Specifically, the skyrmion generating device may generate skyrmions by ensuring that the moving speed of the magnetic domain wall in the first direction within the metal structure is greater than or equal to a threshold value. Additionally, the skyrmion generating device can apply a magnetic field above a threshold or a current above a threshold to the metal structure and generate skyrmions at the magnetic domain wall.
  • the skyrmion generating device may move the magnetic domain wall in a second direction opposite to the first direction to move the first skyrmion in the second direction. Specifically, the skyrmion generating device may move the first skyrmion generated in step S203 in the second direction by ensuring that the movement speed of the magnetic domain wall in the second direction within the metal structure is below a threshold value. Additionally, the skyrmion generating device may apply a magnetic field below a threshold value or a current below a threshold value to the metal structure and move the magnetic domain wall in the second direction.
  • the skyrmion generating device may generate a second skyrmion by moving in the first direction in step S207. Specifically, the skyrmion generating device may generate skyrmions by ensuring that the moving speed of the magnetic domain wall in the first direction within the metal structure is greater than or equal to a threshold value. Additionally, the skyrmion generating device can apply a magnetic field above a threshold or a current above a threshold to the metal structure and generate skyrmions at the magnetic domain wall.
  • the skyrmion generating device can generate skyrmions by moving the magnetic domain wall in a first direction, control the movement direction of the skyrmions by moving them in a second direction, and move the generated skyrmions to another metal structure. Afterwards, it can be moved again in the first direction to create a skyrmion and repeat the series of processes.
  • the skyrmion generating device may generate a second skyrmion by moving the magnetic domain wall in a second direction opposite to the first direction in step S205.
  • the skyrmion generating device may generate the second skyrmion by ensuring that the movement speed of the magnetic domain wall in the second direction within the metal structure is greater than or equal to a threshold value.
  • the skyrmion generating device can apply a magnetic field above a threshold or a current above a threshold to the metal structure and generate skyrmions at the magnetic domain wall.
  • FIG. 7 is a block diagram showing the block configuration of the skyrmion generation device of the present invention.
  • the skyrmion generating device 700 is shown as including a processor 710 and a skyrmion generating unit 720, but is not necessarily limited thereto.
  • the processor 710 and the skyrmion generator 720 may be physically independent components.
  • the processor 710 may be configured to generally control the skyrmion generating device 700.
  • the processor 710 may include a CPU, RAM, ROM, and a system bus.
  • the processor 710 may be implemented as a single CPU or multiple CPUs (or DSP, SoC).
  • the processor 710 may be implemented as a digital signal processor (DSP), a microprocessor, or a time controller (TCON) that processes digital signals.
  • DSP digital signal processor
  • TCON time controller
  • the skyrmion generation unit 720 may include a metal structure, a magnetic field application unit, and a current application unit.
  • the metal structure includes a ferromagnetic layer and a heavy metal layer, so that DMI action can occur, a magnetic domain wall can be formed on the ferromagnetic layer, and skyrmions can be generated.
  • the magnetic field applicator may apply a magnetic field to the metal structure to form a magnetic domain wall or move the magnetic domain wall.
  • the current applicator may apply a current to the metal structure to form a magnetic domain wall or move the magnetic domain wall.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

La présente invention concerne une structure métallique qui peut être appliquée à un dispositif à semi-conducteur et, plus spécifiquement, une structure métallique ou un procédé de génération ou de commande de skyrmion présent dans un matériau ferromagnétique. Une structure métallique selon un mode de réalisation de la présente invention comprend : une couche de métal lourd ; et une couche ferromagnétique qui est disposée sur la couche de métal lourd, comprend une paroi de domaine magnétique, et génère un skyrmion sur la base du mouvement de la paroi de domaine magnétique.
PCT/KR2022/016724 2022-06-28 2022-10-28 Structure métallique ayant une paroi de domaine magnétique formée et procédé de génération de skyrmion WO2024005274A1 (fr)

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KR10-2022-0079269 2022-06-28
KR1020220079269A KR102671872B1 (ko) 2022-06-28 자구벽이 형성된 메탈구조물 및 스커미온 생성 방법

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190109874A (ko) * 2018-03-19 2019-09-27 에스케이하이닉스 주식회사 스커미온 기반 스핀 시냅스 소자 및 그 제조 방법
KR102273708B1 (ko) * 2020-07-15 2021-07-06 한국과학기술연구원 고온에서 안정적으로 스커미온 격자를 생성하는 방법 및 장치
KR20220033858A (ko) * 2020-09-10 2022-03-17 재단법인대구경북과학기술원 자구벽 이동에 기반한 스핀 토크 다수결 게이트
KR102378928B1 (ko) * 2021-02-02 2022-03-28 한국표준과학연구원 스커미온 형성 장치 및 방법
US20220199310A1 (en) * 2019-08-19 2022-06-23 Georgetown University Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190109874A (ko) * 2018-03-19 2019-09-27 에스케이하이닉스 주식회사 스커미온 기반 스핀 시냅스 소자 및 그 제조 방법
US20220199310A1 (en) * 2019-08-19 2022-06-23 Georgetown University Large Dzyaloshinskii-Moriya Interaction and Perpendicular Magnetic Anisotrophy Induced by Chemisorbed Species on Ferromagnets
KR102273708B1 (ko) * 2020-07-15 2021-07-06 한국과학기술연구원 고온에서 안정적으로 스커미온 격자를 생성하는 방법 및 장치
KR20220033858A (ko) * 2020-09-10 2022-03-17 재단법인대구경북과학기술원 자구벽 이동에 기반한 스핀 토크 다수결 게이트
KR102378928B1 (ko) * 2021-02-02 2022-03-28 한국표준과학연구원 스커미온 형성 장치 및 방법

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SUYEONG JEONG, DAE-HAN JUNG, HEE-SUNG HAN, GANGHWI KIM, KI-SUK LEE: "The dynamics of domain wall and skyrmion generation", 2022 KMS SUMMER CONFERENCE, 한국자기학회, 26 May 2022 (2022-05-26), pages 101, XP093122166, [retrieved on 20240122] *

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