WO2024004375A1 - 深部温度計測用プローブ及び深部温度計 - Google Patents

深部温度計測用プローブ及び深部温度計 Download PDF

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Publication number
WO2024004375A1
WO2024004375A1 PCT/JP2023/017069 JP2023017069W WO2024004375A1 WO 2024004375 A1 WO2024004375 A1 WO 2024004375A1 JP 2023017069 W JP2023017069 W JP 2023017069W WO 2024004375 A1 WO2024004375 A1 WO 2024004375A1
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Prior art keywords
temperature
deep
probe
substrate
region
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PCT/JP2023/017069
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English (en)
French (fr)
Japanese (ja)
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伸晃 橋元
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Public University Corp Suwa University Of Science Foundation
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Public University Corp Suwa University Of Science Foundation
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Priority to CN202380049725.7A priority Critical patent/CN119421659A/zh
Priority to US18/871,597 priority patent/US20250354877A1/en
Priority to EP23830827.4A priority patent/EP4548836A1/en
Priority to JP2024530334A priority patent/JP7702181B2/ja
Publication of WO2024004375A1 publication Critical patent/WO2024004375A1/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/20—Clinical contact thermometers for use with humans or animals
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B5/00—Measuring for diagnostic purposes; Identification of persons
    • A61B5/01—Measuring temperature of body parts ; Diagnostic temperature sensing, e.g. for malignant or inflamed tissue
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
    • G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
    • G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/42—Circuits effecting compensation of thermal inertia; Circuits for predicting the stationary value of a temperature
    • G01K7/427—Temperature calculation based on spatial modeling, e.g. spatial inter- or extrapolation
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
    • A61B2562/02—Details of sensors specially adapted for in-vivo measurements
    • A61B2562/0271—Thermal or temperature sensors
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B2562/00—Details of sensors; Constructional details of sensor housings or probes; Accessories for sensors
    • A61B2562/04—Arrangements of multiple sensors of the same type
    • A61B2562/043—Arrangements of multiple sensors of the same type in a linear array

Definitions

  • the present invention relates to a deep temperature measuring probe and a deep thermometer, and particularly to a deep temperature measuring probe and a deep thermometer that measure the deep temperature (core temperature) of a human body.
  • the bithermal flow method which measures the temperature deep inside the human body using a non-invasive method, has been researched for some time.
  • the bithermal flow method measures the heat flow passing through two different insulation materials and solves the simultaneous equations related to the heat flow to determine the deep temperature TB without using the thermal resistance value of the biological skin, which is an unknown quantity (for example, non-patent literature (see 1).
  • Non-Patent Document 1 and Patent Document 1 disclose deep temperature measurement probes (hereinafter sometimes simply referred to as "probes") that measure deep temperature TB using the bithermal flow method.
  • probes deep temperature measurement probes
  • a difference must be provided between the thermal resistance values of the two heat flow paths (between the thermal resistance value of the first heat flow path and the thermal resistance value of the second heat flow path). is important, and these documents also disclose probes devised for this purpose.
  • the occupancy rate and/or dispersion of the conductive pattern in the first region of the substrate is made different from the occupancy rate and/or dispersion of the conductive pattern in the second region. Therefore, the structure is such that there is a difference in thermal resistivity between the two.
  • a conductive pattern is arranged between the layers of the substrate in the first heat flow path to lower the overall thermal resistance value R, while in the second heat flow path, a conductive pattern between such layers is arranged.
  • the second heat flow path is configured by the substrate material itself without arranging a pattern, so that there is a difference in the thermal resistance value of the heat flow path between the two as a whole.
  • the thickness of the substrate constituting the probe for deep temperature measurement is made thinner, the dimension in the thickness direction becomes smaller, so the thermal resistance value in the thickness direction tends to decrease.
  • the technology of the probe for deep temperature measurement described in Patent Document 1 is used, even if a conductive pattern is inserted between the layers to lower the thermal resistance value of the first region, the thickness of the second region will be reduced due to the thinning of the substrate. Since the thermal resistance values of the regions are also small, it is difficult to differentiate the thermal resistance values between the two regions. Therefore, even if a thin wearable probe for measuring deep temperature is constructed using the technology described in Patent Document 1, it is difficult to maintain high accuracy in measuring and estimating deep temperature (hereinafter simply referred to as "measurement").
  • the present invention has been made in view of the above-mentioned circumstances, and provides a probe for deep thermometer measurement that can measure the temperature deep inside a subject with high accuracy even if the substrate constituting the probe becomes thinner.
  • the purpose is to Another object of the present invention is to provide a deep part thermometer equipped with such a probe for measuring a deep part thermometer.
  • a probe for deep temperature measurement which is used when measuring the temperature of the deep part of a subject.
  • a probe for deep temperature measurement includes a plate-shaped substrate and a pair of temperature sensors mounted in a first region of the substrate so as to face each other with the substrate in between. , a pair of temperature sensors mounted in the second region of the substrate so as to face each other with the substrate interposed therebetween, ⁇ a pair of second region temperature sensors.'' A through hole is formed in the substrate directly below the first region temperature sensor, and the through hole penetrates between the front surface and the back surface of the substrate, and the pair of first region temperature sensors are connected by the through hole.
  • the structure is as follows.
  • a probe for measuring deep temperature which is similarly used when measuring the temperature in the deep part of a subject.
  • a probe for deep temperature measurement includes a plate-shaped substrate, a pair of temperature sensors mounted opposite to each other across the substrate in a first region of the substrate, and a “pair of first region temperature sensors”; , a first heat flow measuring system having a first heat flow path configured in a substrate in a first region and measuring a first heat flow flowing out from the subject.
  • a pair of temperature sensors which are a pair of temperature sensors mounted in a second region of the substrate so as to face each other with the substrate sandwiched therebetween, and a second region temperature sensor configured in the substrate in the second region are provided.
  • a second heat flow measuring system having two heat flow paths and measuring a second heat flow flowing out from the subject is provided.
  • a through hole is formed in the substrate directly below the first region temperature sensor and penetrates between the front and back surfaces of the substrate, and the first heat flow path is composed of an air layer arranged inside the through hole. It is configured as follows.
  • each temperature measured by the probe for deep temperature measurement described above, a pair of first region temperature sensors and a pair of second region temperature sensors of the probe for deep temperature measurement is A deep temperature estimating section that estimates a deep temperature using the deep temperature estimator is provided.
  • thermometer for deep thermometer measurement that is capable of measuring the temperature deep within a subject with high accuracy even if the substrate constituting the probe becomes thinner. Further, it is possible to provide a deep temperature thermometer including such a probe for measuring deep temperature.
  • FIG. 1 is a diagram shown to explain a deep temperature measurement probe 1 according to a first embodiment.
  • FIG. 1 is a diagram showing the components of a probe 1 for deep temperature measurement according to Embodiment 1.
  • FIG. FIG. 2 is a block diagram showing an example of the hardware configuration of a deep temperature thermometer 500 according to the first embodiment.
  • FIG. 2 is a thermal equivalent circuit diagram of the deep temperature measurement probe 1 according to the first embodiment.
  • 1 is a cross-sectional view schematically showing an experimental system of a deep temperature measurement probe 1 according to Embodiment 1.
  • FIG. FIG. 2 is a cross-sectional view showing a deep temperature measurement probe 2 according to a second embodiment.
  • FIG. 3 is a cross-sectional view showing a probe 3 for deep temperature measurement according to Embodiment 3.
  • FIG. 3 is a cross-sectional view showing a deep temperature measurement probe 5 according to Modification 1.
  • FIG. 7 is a cross-sectional view of a main part showing deep temperature measurement probes 6 and 7 according to Modifications 2 and 3.
  • FIG. 7 is a diagram shown to explain probes 4', 4'' for deep temperature measurement according to Modification 4;
  • FIG. 1 is a diagram shown for explaining the probe 1 for measuring deep temperature according to Embodiment 1.
  • FIG. 1(a) is a cross-sectional view of the deep temperature measuring probe 1 taken along the line BB in FIG. 1(b).
  • FIG. 1(b) is a plan view of the deep temperature measurement probe 1 viewed along arrow A in FIG. 1(a).
  • FIG. 2 is a diagram showing the components of the deep temperature measurement probe 1 according to the first embodiment.
  • the probe 1 for deep temperature measurement is used to measure the temperature of the deep part 9c of the subject 9.
  • the temperature of the deep part 9c of the subject (deep temperature TB) is measured by directly or indirectly contacting the subject surface 9a.
  • the symbol RS represents the thermal resistance value of the intermediate portion 9b of the subject, which cannot be directly measured.
  • Typical subjects 9 include living organisms such as humans and animals, but in this embodiment, the description will continue assuming humans.
  • the deep temperature measurement probe 1 includes a substrate 10 and temperature sensors 21, 22, 23, and 24. Note that in this specification, the temperature sensor is sometimes simply referred to as a "sensor.”
  • FIG. 2A is a plan view showing the substrate 10, and shows the surface of the bare substrate on which the temperature sensors 21, 22, 23, 24, and 25 are not mounted.
  • the substrate 10 is a printed circuit board on which a wiring pattern 13 is formed.
  • a glass epoxy substrate can be used as the substrate 10.
  • the substrate 10 of this embodiment is a so-called double-sided substrate having wiring patterns 13 on both the front surface 10a and the back surface 10b.
  • the wiring pattern 13 (wiring pattern in a broad sense) includes terminals 13c, wiring patterns 13a in a narrow sense connecting between the terminals 13c, lands 13b in a narrow sense formed in a pad shape, and the like.
  • description of intermediate connections for the wiring pattern 13a in a narrow sense is omitted.
  • the substrate 10 has a front surface 10a and a back surface 10b, and has a plate-like shape, for example. Note that the definitions of the front surface 10a and the back surface 10b here are for convenience, and the surface facing the outside world (the atmosphere 8 side) is the front surface 10a, and the surface that contacts the subject 9 is the back surface 10b.
  • the substrate 10 has the function of a base on which the temperature sensors 21, 22, 23, and 24 are mounted, and a part (or all) of the substrate 10 allows heat to flow from the back surface 10b side to the front surface 10a side. (see also Figure 1).
  • Temperature sensors 21, 22, 23, 24 measure the temperature at the contact point (node) and output an output signal according to the measured temperature, and are, for example, thermocouples, platinum resistance thermometers, thermistors, etc. It can be configured with a discrete device, or a device that is converted into an IC (Integrated Circuit) and outputs a digital output signal.
  • the temperature sensors 21, 22, 23, and 24 of this embodiment are integrated circuits, and may be implemented, for example, in a so-called SON package (Small Outline Non-leaded package) as shown in the figure.
  • FIG. 2(b) is a bottom view showing the bottom surface of a SON package in which the temperature sensors 21, 22, 23, 24, and 25 are implemented.
  • the temperature sensors 21, 22, 23, 24, and 25 each have a semiconductor chip (not shown) inside that has a function of sensing temperature and converting it into an electrical signal, and are electrically connected to the semiconductor chip. External connection terminal 28 is exposed on the bottom surface.
  • the temperature sensors 21, 22, 23, 24, and 25 are equipped with thermal pads for improving the thermal coupling between the contact area to be measured (specifically, the node of the thermal flow path) and the internal semiconductor chip. 29 is also provided on the bottom surface.
  • the temperature sensors 21 and 22 are mounted as a pair in the first region 11 of the substrate 10 so as to face each other with the substrate 10 in between.
  • the temperature sensor 21 is mounted on the back surface 10b of the substrate 10, and the temperature sensor 22 is mounted on the front surface 10a of the substrate 10.
  • the temperature sensors 23 and 24 are mounted as a pair in the second region 12 of the substrate 10 so as to face each other with the substrate 10 in between.
  • the temperature sensor 23 is mounted on the back surface 10b of the substrate 10, and the temperature sensor 24 is mounted on the front surface 10a of the substrate 10.
  • the reference numeral 60 indicates an external connector for connecting with the outside.
  • reference numeral 25 is a temperature sensor that measures the outside air temperature. As will be described later, when determining the thermal resistance ratio K experimentally, the external temperature T5 measured by the temperature sensor 25 is used to correct the thermal resistance ratio K. Note that the temperature sensor 25 is arranged adjacent to the regions constituting the first region 11 and the second region 12. It is also possible to measure the outside air temperature with one module, and as a whole, the deep thermometer 500 can be realized in a compact, lightweight, and inexpensive manner.
  • the pair of temperature sensors 21 and 22 will be referred to as a "pair of first region temperature sensors 21 and 22," and the pair of temperature sensors 23 and 24 will be referred to as a "pair of second region temperature sensors 23 and 24," respectively.
  • the "first region 11" and the “second region 12" refer to the "first heat flow path 115" which is designed to have a difference between their thermal resistance values R1 and R2 when performing deep temperature measurement by the dual heat flow method. ” and “second heat flow path 125” (see FIG. 1(b), FIG. 2, etc.).
  • each temperature sensor 21, 22, 23, 24 is connected to the terminal 13c of the board 10 via "solder 51", thereby electrically connecting the two, and Each sensor is fixed on the substrate 10.
  • the thermal pads 29 of the temperature sensors 23 and 24 are connected to the lands 13b of the substrate 10 via "solder 51" over the entire overlap area thereof, and thereby the lands 13b of the substrate 10 (the second At the same time, the distance between the thermal pad 29 and the land 13b is fixed with "solder 51" to prevent dynamic distance fluctuation (temporary solder 51). (assumed that there is no gap and only a gap) can be suppressed.
  • the thickness of the "solder 51" is controlled to fall within a predetermined range of variation, and the distance between the thermal pad 29 and the land 13b is kept approximately constant. As a result, the distance between the pair of second region temperature sensors 23 and 24 can be kept almost constant, and the thermal resistance value R2 of the second heat flow path 125 can be managed almost constant with good reproducibility even during mass production. can.
  • the second heat flow path 125 is constituted by the substrate 10 itself, the thermal pad 29, and the "solder 51" inserted between the land 13b. Since the second heat flow path 125 is constructed while making use of the substrate 10 itself, the probe can be constructed with a simple configuration without any special work or increase in the number of parts, making it an economically advantageous probe. Become. A second heat flow 120a flows from the back side of the probe 1 for deep temperature measurement to the front side through the second heat flow path 125 (see reference numeral 120a schematically indicated by a thick arrow in FIG. 1(a)). .
  • an air layer 30 is arranged inside the through hole 15.
  • Reference numeral 15a indicates the inner wall of the through hole.
  • the first heat flow path 115 is configured by the gap between the through holes 15 described above (the air layer 30 in the first embodiment).
  • the air layer 30 disposed inside the through hole 15 formed in the substrate 10 realizes a thermal resistor that constitutes the first heat flow path 115.
  • a first heat flow 110a flows from the back side of the probe 1 for deep temperature measurement to the front side. See >>.
  • the first region temperature sensors 21 and 22 are configured as semiconductor ICs, and when viewed from above, the through hole 15 is located between the thermal pad 29 of the IC (or the back surface of the bare chip in Modification 3, which will be described later). It is preferable that the areas overlap by 50% or more (see FIG. 1(b)). Furthermore, it is more preferable that the through hole 15 overlaps the entire area of the thermal pad 29.
  • First heat flow measurement system 110 and second heat flow measurement system 120 The above-described first heat flow path 115 configured in the substrate of the first region 11 and the pair of first region temperature sensors 21 and 22 constitute the "first heat flow measurement system 110.” Similarly, a second heat flow path 125 configured in the substrate of the second region 12 and a pair of second region temperature sensors 23 and 24 constitute a "second heat flow measurement system 120.”
  • the probe 1 for deep temperature measurement has the following configuration. That is, a pair of first region temperature sensors 21 and 22 are mounted in the first region 11 of the substrate 10 so as to face each other with the substrate 10 in between, and A "first heat flow measuring system” having a heat flow path 115 and measuring a first heat flow 110a flowing out from the subject 9 is provided. A pair of second region temperature sensors 23 and 24 are mounted in the second region 12 of the substrate 10 so as to face each other with the substrate 10 in between, and A “second heat flow measuring system 120" having a heat flow path 125 and measuring a second heat flow 120a flowing out from the subject 9 is provided. A through hole 15 is formed in the substrate 10 directly below the first region temperature sensors 21 and 22 and penetrates between the front and back surfaces of the substrate 10, and a first heat flow path 115 is formed inside the through hole 15. It is composed of an air layer 30 arranged in.
  • FIG. 3 is a block diagram showing an example of the hardware configuration of the deep body thermometer 500 according to the first embodiment.
  • Reference numeral 200 indicates a temperature measuring section.
  • the deep temperature sensor 500 includes the deep temperature measurement probe 1 according to the first embodiment described above, a pair of first region temperature sensors 21 and 22 of the deep temperature measurement probe 1, and a pair of second region temperatures.
  • the configuration may include a deep temperature estimating section 210 that estimates the deep temperature TB using each temperature measured by the sensors 23 and 24.
  • the deep temperature estimating unit 210 calculates the deep temperature TB using the bithermal flow method (for example, by calculating the equation (10) described later) and uses it as an estimated value.
  • the deep temperature estimation unit 210 can be configured as either a dedicated circuit or a general-purpose circuit.
  • the general-purpose circuit is realized, for example, by an information processing device (no reference numeral) as shown in FIG.
  • the information processing device that constitutes the deep temperature estimator 210 includes a processor 211 , a memory 212 , an input/output interface 214 , and a communication interface 215 . These are connected to bus BS.
  • the processor 211 operates based on a program stored in a storage unit (memory 212 and storage not shown) and controls each unit.
  • the storage unit (uncoded) also includes a non-volatile storage device (ROM, etc.), which is dependent on the boot program executed by the processor 211 when the information processing device is started and the hardware of the information processing device. Programs etc. are stored.
  • the storage (not shown) is composed of auxiliary storage devices such as SDD (Solid State Drive) and HDD (Hard Disk Drive).
  • the memory 212 appropriately stores data and the like necessary when the processor 211 executes various types of control and processing.
  • the processor 211 calculates the deep temperature TB by applying the temperatures T1 to T4, etc. to equation (10), which will be described later, and uses it as an estimated value.
  • the deep temperature estimation unit 210 can be said to be a processor function that calculates and estimates the deep temperature TB.
  • the input/output interface 214 performs input/output from input/output devices (particularly the temperature sensors 21, 22, 23, 24, and 25 here).
  • the communication interface 215 receives data from other electronic devices via a network or the like and sends it to the processor 211, and also sends data generated by the processor 211 to the other electronic devices via the network or the like.
  • Equation (10) described below used when estimating the deep temperature TB for the experimental system it is necessary to identify and prepare the values of the thermal resistance ratio K of the first heat flow measurement system 110 and the second heat flow measurement system 120. be. If the materials constituting the first heat flow path 115 and the second heat flow path 125 and their physical properties are known, it is also possible to theoretically obtain the thermal resistance ratio K. However, the inventor has recently developed a method in which the thermal resistance ratio K is experimentally determined in advance in accordance with the actual situation using a separate experimental system, and then this thermal resistance ratio K is applied to equation (10). The details will be explained below.
  • FIG. 4 is a thermal equivalent circuit diagram of the deep temperature measurement probe 1 according to the first embodiment. Ia shown in FIG. 4 is the heat flow (value) flowing through the first heat flow path 115, and Ib is the heat flow (value) flowing through the second heat flow path 125.
  • Ic is the heat flow (value) flowing through the thermal resistance Rs (thermal resistance value) between the deep part 9c of the subject and the surface 9a (skin) of the subject in the first heat flow measurement system 110
  • Id is the heat flow (value) flowing through the heat resistance Rs (thermal resistance value) between the deep part 9c of the subject and the surface 9a (skin) of the subject in the first heat flow measurement system 110
  • This is the heat flow (value) flowing through the thermal resistance Rs (thermal resistance value) between the deep part 9c of the specimen and the surface 9a (skin) of the specimen.
  • the inventor decided to obtain the deep temperature TB using another method.
  • equation (9) can be transformed into the following equation for determining the deep temperature TB.
  • TB T1+(T1-T2)(T1-T3)/[K(T2-T4)-(T1-T3)]...(10)
  • the inventor conducted a preliminary experiment based on this idea and decided to determine the thermal resistance ratio K using the relationship of equation (9).
  • the deep temperature estimating unit 210 of the first embodiment estimates the heat in the first heat flow path 115 between the pair of first region temperature sensors 21 and 22 and the second heat flow path 125 between the pair of second region temperature sensors 23 and 24.
  • K [(TB-T2)(T1-T3)] /[(TB-T1)(T2-T4)]
  • the deep temperature is TB
  • the sensor 21 of the pair of first region temperature sensors is placed on the side of the subject 9
  • the sensor 22 of the pair of second region temperature sensors is placed on the side of the subject 9
  • the temperatures be T1, T2, T3, and T4, respectively.
  • FIG. 5 is a cross-sectional view schematically showing an "experimental system” for experimentally determining the thermal resistance ratio K of the probe 1 for deep temperature measurement.
  • a water bath 130 with a large heat capacity is used in place of the deep part 9c of the subject, and is placed in a constant temperature and humidity chamber (not shown).
  • the temperature in the constant temperature and humidity chamber (environmental temperature) is set to a predetermined temperature between 10°C and 30°C.
  • the water temperature (deep temperature TB) is kept almost constant (about 37°C).
  • reference numeral 109 indicates a substitute subject, and the surface 109a of the substitute subject is composed of a substitute skin made of a natural rubber sheet and imitating the skin of a living body.
  • Reference numeral 109b indicates a region corresponding to the middle part of the surrogate subject
  • numeral 109c indicates a region corresponding to the deep part of the surrogate subject.
  • Reference numeral 131a is a support rod that supports the temperature sensor 131 (thermistor, etc.). The deep temperature measuring probe 1 is placed on top of the aluminum tub 133, and the aluminum tub 133 is floated on water in the water bath 130.
  • the temperature sensor 131 By using such an experimental system, by measuring the temperature with the temperature sensor 131, it is possible to obtain (i) the actual deep water temperature (deep temperature TBr) in the water bath 130. Further, the temperature sensed by the temperature sensors 21 to 24 of the deep temperature measuring probe 1 is measured by the temperature measuring section 200 and output to the deep temperature estimating section 210, and the deep temperature estimating section 210 calculates based on the temperature. By doing so, (ii) an estimated deep water temperature (deep temperature TBp) can also be obtained.
  • the thermal resistance ratio K can be determined by conducting an experiment (preliminary experiment) as follows while using equation (9).
  • (a) Conduct a preliminary experiment to measure the actual deep water temperature (deep temperature TBr), measure temperatures T1 to T4 with temperature sensors 21 to 24, and measure probe 1 for deep temperature measurement (experimental system shown in Figure 5). Calculating the thermal resistance ratio K of the thermal equilibrium state) by applying the relationship of equation (9) is repeated multiple times.
  • (a) Find the average value of the thermal resistance ratio K obtained from multiple experiments.
  • C The measured value of water temperature (deep temperature TBr) and the estimated deep temperature TBp (water temperature) calculated by applying the average value of thermal resistance ratio K and temperatures T1 to T4 to the relationship of equation (10). Compare and check whether the difference (error) between the two has become smaller. If the error is large, repeat the above operations (a) to (c) again to determine the thermal resistance ratio K that reduces the error.
  • the numerical value of the thermal resistance ratio K determined as described above is stored in the memory 212 (see FIG. 3).
  • the deep temperature TB can be calculated (estimated) by measuring the temperature using the temperature sensors 21 to 24 and the temperature measurement section 200, and calculating the equation (10) using the deep temperature estimating section 210.
  • the substrate of the probe 1 for deep temperature measurement according to the first embodiment includes the substrate immediately below the first region temperature sensors 21 and 22.
  • a through hole 15 is formed that penetrates between the front and back surfaces of 10, and the pair of first region temperature sensors 21 and 22 are connected through the through hole 15.
  • the pair of first region temperature sensors 21 and 22 are connected by the through hole 15 formed directly below the sensor, so special treatment is required, for example, for a hole-only structure. If this is not done, only the air layer 30 will exist inside the through hole 15, and the thermal resistance value R1 between the pair of first region temperature sensors 21 and 22 can be significantly increased.
  • the first heat flow path 115 (between the pair of first region temperature sensors 21 and 22) This makes it easier to provide a difference between the thermal resistance value R1 of , and the thermal resistance value R2 of the second heat flow path 125 (between the pair of second region temperature sensors 23 and 24). Therefore, even if the substrate 10 constituting the probe becomes thinner, it is possible to measure the temperature of the deep part 9c of the subject (deep part temperature TB) with high accuracy.
  • the thermal conductivity of air is 0.0241 [W/(mK)] (at 0 [°C]), while the thermal conductivity of the materials that make up the substrate 10, such as polyimide (PI), is 0.28 ⁇ 0.34 [W/(mK)].
  • an air layer 30 is arranged inside the through hole 15 . Therefore, when looking at the probe 1 for deep temperature measurement from the viewpoint of thermal resistance, the air layer 30 can have a thermal resistance value that is orders of magnitude larger than that of the members constituting the substrate 10 and the like.
  • the thermal resistance value R1 of the first heat flow path 115 that is constituted by the air layer 30 can be significantly increased, so that the thermal resistance value R1 of the first heat flow path 115 and the thermal resistance value of the second heat flow path 125 can be significantly increased. This can be achieved with a very simple structure for providing a difference between R2 and R2.
  • the deep temperature sensor 500 includes the deep temperature measurement probe 1 according to the first embodiment, a pair of first region temperature sensors 21 and 22 of the deep temperature measurement probe 1, and a pair of second region temperature sensors 21 and 22 of the deep temperature measurement probe 1.
  • a deep temperature estimating section 210 that estimates the deep temperature using each temperature measured by the temperature sensors 23 and 24 is provided.
  • the deep thermometer 500 is equipped with a deep temperature measurement probe 1 that can measure the temperature of the deep part 9c of the subject (deep temperature TB) with high accuracy even with a thin substrate 10, so it is a small and highly accurate deep thermometer. becomes.
  • the deep thermometer 500 uses the thermal resistance ratio K determined in advance using the relationship expressed by the above equation (9) for calculating the thermal resistance ratio K, and the test object 9 by probing.
  • the deep temperature TB is estimated by applying the measured temperatures T1, T2, T3, and T4 to the relationship expressed by the above equation (10).
  • the thermal resistance ratio K is calculated theoretically based on the known thermal conductivity of the materials that make up each heat flow path.
  • the actual and accurate thermal resistance ratio K may differ. Therefore, by determining the thermal resistance ratio K in advance using the relationship expressed by the above equation (9) in a separate experimental system, it is possible to probe the deep Temperature TB can be estimated. Therefore, it becomes possible to measure deep temperature with higher accuracy.
  • FIG. 6 is a sectional view showing a deep temperature measurement probe 2 according to the second embodiment.
  • the deep temperature measurement probe 2 according to the second embodiment basically has the same configuration as the deep temperature measurement probe 1 according to the first embodiment, but differs from the first embodiment in the configuration of the first heat flow path 115. This is different from the probe 1 for deep temperature measurement.
  • a heat insulating paper 31 is further arranged inside the through hole 15.
  • the heat insulating paper 31 is paper having a thermal conductivity that is approximately the same as that of air. Examples include sheets in which porous particles of silica gel containing foamed air (so-called silica airgel) are kneaded.
  • silica airgel porous particles of silica gel containing foamed air
  • the insulating paper 31 may be formed into a three-dimensional shape as appropriate, such as by alternately folding the insulating paper 31 into a wavy shape, by folding it in a repeating pattern of peaks and troughs, or by randomly rolling the insulating paper 31, and packed into the internal space of the through hole 15.
  • the insulating paper 31 By arranging the heat insulating paper 31 inside the through hole 15 constituting the first heat flow path 115, the insulating paper 31 can prevent the movement of air inside the through hole 15, thereby causing convection inside the through hole 15. can be suppressed. As a result, heat transfer by "convection" in the first heat flow path 115 is suppressed, and direct heat transfer by "conduction” via the air layer 30 and the heat insulating paper 31 is mainly performed. Therefore, the thermal circuit is also in a more ideal state, and it becomes possible to measure the deep temperature with even higher accuracy.
  • the deep temperature measurement probe 2 according to the second embodiment has basically the same configuration as the deep temperature measurement probe 1 according to the first embodiment except for the configuration of the first heat flow path 115. Therefore, the probe 2 for deep temperature measurement similarly has the corresponding effects among the effects that the probe 1 for deep temperature measurement has.
  • FIG. 7 is a sectional view showing a deep temperature measurement probe 3 according to the third embodiment.
  • the deep temperature measurement probe 3 according to the third embodiment basically has the same configuration as the deep temperature measurement probe 1 according to the first embodiment, but the structure of the substrate 10 and the structure of the first heat flow path 115 are different. This differs from the probe 1 for deep temperature measurement according to the first embodiment.
  • the substrate 10 is made of a glass substrate, and the inside of the through hole 15 is configured to be in a vacuum or near-vacuum state 32. ing.
  • the thermal conductivity can be further lowered than in the case of the air layer 30, that is, The thermal resistance value R1 between the pair of first region temperature sensors 21 and 22 can be further increased.
  • the deep temperature measurement probe 3 according to the third embodiment is basically the same as the deep temperature measurement probe 1 according to the first embodiment except for the structure of the substrate 10 and the structure of the first heat flow path 115. It has a configuration. Therefore, the probe 2 for deep temperature measurement similarly has the corresponding effects among the effects that the probe 1 for deep temperature measurement has.
  • FIG. 8 is a diagram shown to explain the deep temperature measurement probe 4 according to the fourth embodiment.
  • FIG. 8(a) is a sectional view of the probe 4 for deep temperature measurement, showing the DD cross section in FIG. 8(b).
  • FIG. 8(b) is a plan view of the deep temperature measurement probe 4 viewed along arrow C in FIG. 8(a).
  • the deep temperature measurement probe 4 according to the fourth embodiment basically has the same configuration as the deep temperature measurement probes 1, 2, and 3 according to the first, second, and third embodiments, but the first heat flow path 115 and This differs from the probes 1, 2, and 3 for deep temperature measurement according to Embodiments 1, 2, and 3 in that it is configured to suppress thermal interference between the second heat flow paths 125.
  • an air layer 40 is arranged between the first region 11 and the second region 12 on the substrate 10.
  • the air layer 40 may be formed by forming a through hole penetrating between the front surface 10a and the back surface 10b of the substrate 10, as shown in FIG. 8, for example, and using air placed in the through hole.
  • the through hole may be configured as a long hole that penetrates most of the lateral area of the temperature sensor, as shown in FIG.
  • the air layer 40 which can be called a heat insulator, is connected to the first region 11 where the first heat flow path 115 is arranged and the second heat flow path. Heat conduction between the second region 12 and the second region 12 where the second region 125 is disposed can be blocked. This makes it possible to reduce the thermal interference between the first heat flow path 115 and the second heat flow path 125 and increase the independence of both heat flow paths, making it possible to measure the deep temperature with even higher accuracy. becomes.
  • the probe 4 for deep temperature measurement according to Embodiment 4 has the same configuration as Embodiments 1, 2, It has basically the same configuration as the probes 1, 2, and 3 for deep temperature measurement according to No. 3. Therefore, the deep temperature measurement probe 4 similarly has the corresponding effects among the effects of the deep temperature measurement probes 1, 2, and 3.
  • the second heat flow path 125 was configured by utilizing the substrate 10 itself.
  • the present invention is not limited thereto.
  • another through hole 17 is formed in the substrate 10, passing through between the front surface 10a and the back surface 10b of the substrate 10 directly below the second region temperature sensors 23 and 24, and A metal 37 may be embedded in the other through hole 17, and the pair of second region temperature sensors 23 and 24 may be connected via the metal 37 (Modification 1).
  • FIG. 9 is a cross-sectional view showing the probe 5 for deep temperature measurement according to the first modification.
  • copper can be used as the metal 37.
  • the thermal conductivity of copper is said to be 403 [W/(mK)] (at 0 [° C.]), which is an order of magnitude higher than that of the members constituting the substrate 10 and the like.
  • the metal 37 can have a thermal resistance value that is orders of magnitude lower than that of the members constituting the substrate 10 and the like. Therefore, the thermal resistance value R2 of the second thermal flow path 125 constituted by the metal 37 can be significantly reduced, and the difference from the thermal resistance value R1 of the first thermal flow path 115 can be easily secured.
  • the thermal pads 29 of the temperature sensors 23 and 24 and the lands 13b of the wiring pattern 13 are connected by solder 51.
  • the present invention is not limited to this.
  • a structure may be adopted in which there is no electrical connection between the thermal pad 29 and the land 13b of the wiring pattern 13 by leaving only a gap (air layer) without interposing the "solder 51" (not shown). Even with such a structure, it is possible to thermally couple the pair of second region temperature sensors 23 and 24.
  • the temperature sensors 21 to 24 have been described using SON package ICs.
  • the present invention is not limited thereto.
  • the temperature sensors 21 to 24 may be configured with WL-CSP (Wafer level Chip Size Package) ICs (Modification 2).
  • the temperature sensors 21 to 24 can be configured by mounting bare chips directly on the substrate 10 (Modification 3).
  • the temperature sensor may be configured with a temperature sensor other than an IC, such as a thermocouple.
  • the probe 4 for deep temperature measurement in order to thermally separate the first region 11 and the second region 12, the probe 4 penetrates between the front surface 10a and the back surface 10b of the substrate 10.
  • FIG. 8 a "elongated hole-like (planar view)" through hole is formed.
  • the present invention is not limited thereto.
  • a plurality of spot-like through holes that penetrate the substrate 10 in a "perfect circular shape (in plan view)" instead of "elongated holes” are arranged in parallel.
  • the air layer 40 can be formed by forming a cavity inside the substrate 10 in the thickness direction and placing air in the cavity. (Modification 5).
  • an air layer 41 may also be provided between the temperature sensor 25 and the regions forming the first region 11 and the second region 12.
  • the air layer 41 may be formed of an elongated hole that penetrates most of the lateral area of the temperature sensor 25 as shown in the figure.
  • an air layer 40 When viewed from the second region 12, an air layer 40 is placed on the left side, an air layer 41 is placed on the right side, and the atmosphere 8 (air layer) is placed on the upper and lower sides in plan view of the drawing.
  • the air layer 40 when viewed from the right side, and the atmosphere 8 (air layer) is placed on the left side, upper side, and lower side in plan view of the drawing. That is, an air layer is arranged around the first region 11 and/or the second region 12. If the above configuration is adopted, the heat flux between the pair of temperature sensors arranged on the front and back sides of the substrate 10 will be covered/surrounded by an air layer with low thermal conductivity, so the heat flow will be different in plan view.
  • the heat flux cannot be directed horizontally, resulting in ideal heat flux only in the vertical direction, which further improves the accuracy of the deep temperature that can be measured. Furthermore, if you form a long hole so as to cover/enclose as much of the area around the temperature sensor as possible (on all four sides if possible), you will have an even more ideal heat flux only in the vertical direction, and the deep temperature that can be measured. The accuracy of is further improved. Furthermore, insulating paper 31 having approximately the same thermal conductivity as air may be arranged in each of the air layers 40 and 41.
  • FIG. 10 is a sectional view of a main part showing deep temperature measurement probes 6 and 7 according to Modification 2 and Modification 3.
  • FIG. 11 is a diagram shown for explaining deep temperature measurement probes 4', 4'' according to Modifications 4 and 5.
  • FIG. 11(a) is a plan view of the deep temperature measuring probe 4'
  • FIG. 11(b) is a sectional view of the deep temperature measuring probe 4' taken along the line EE in FIG. 11(a).
  • FIG. 11(c) is a plan view of the probe 4'' for deep temperature measurement
  • FIG. 11(d) is a cross-sectional view of the probe 4'' for deep temperature measurement showing the FF cross section of FIG. 11(c). be.

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CN202380049725.7A CN119421659A (zh) 2022-06-30 2023-05-01 深部体温测量用探针及深部体温计
US18/871,597 US20250354877A1 (en) 2022-06-30 2023-05-01 Deep part temperature measuring probe and deep part thermometer
EP23830827.4A EP4548836A1 (en) 2022-06-30 2023-05-01 Probe for deep temperature measurement and deep thermometer
JP2024530334A JP7702181B2 (ja) 2022-06-30 2023-05-01 深部温度計測用プローブ及び深部温度計

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WO2026042398A1 (ja) * 2024-08-19 2026-02-26 公立大学法人公立諏訪東京理科大学 深部温度計測用プローブ、深部温度計及び深部温度計測方法

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