Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45578—Elongated nozzles, tubes with holes
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/345—Silicon nitride
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45502—Flow conditions in reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
  • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45561—Gas plumbing upstream of the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/694—Inorganic materials composed of nitrides
  • H10P14/6943—Inorganic materials composed of nitrides containing silicon
  • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Definitions

• the present disclosure relates to a substrate processing apparatus, a substrate processing method, and a semiconductor device manufacturing method.
• a semiconductor manufacturing apparatus for manufacturing semiconductor devices is known as an example of a substrate processing apparatus.
• a semiconductor manufacturing equipment Japanese Patent Application Publication No. 2019-203182, Japanese Patent Application Publication No. 2022-52622, and Korean Patent Publication No. 101464644 disclose a vertical type semiconductor manufacturing apparatus that processes a plurality of substrates while holding them in multiple stages in the vertical direction.
• a semiconductor manufacturing apparatus is disclosed.
• a film formation process for forming a predetermined film on the surface of a substrate can be performed as a substrate process.
• Patent Document 1 Japanese Patent Application Publication No. 2019-203182
• Patent Document 2 Japanese Patent Application Publication No. 2022-52622
• Patent Document 3 Korean Patent Publication No. 101464644
• the concentration of the raw material gas or intermediate may be uneven due to the flow of the raw material gas being uneven on the substrate surface. There is. If the concentration of these gases on the substrate surface is uneven, there is a possibility that the in-plane uniformity of the gas adsorbed on the substrate surface may be reduced, or the step coverage may be reduced.
• the present disclosure provides a technique that can improve the uniformity of the flow of source gas on the substrate surface.
• a processing tube having a cylindrical portion whose upper portion is covered and which accommodates a substrate;
• a supply buffer provided on a side wall of the cylindrical portion and protruding outward from the side wall;
• a first injection device provided inside the supply buffer and extending along the direction of the axis of the cylinder portion;
• a plurality of exhaust portions formed on the side wall of the cylindrical portion to exhaust the raw material gas, the exhaust portions including a circumferential center of the cylindrical portion at a boundary between the supply buffer and the cylindrical portion in plan view;
• a configuration is provided that includes a plurality of exhaust portions each having a pair of exhaust portions that are opened from both sides with a virtual plane set to pass through the axis of the cylindrical portion.
• the uniformity of the flow of source gas on the substrate surface can be improved.
• FIG. 1 is a front view illustrating a substrate processing apparatus according to an embodiment of the present disclosure, partially cut along a vertical plane along the depth direction.
• FIG. 2 is a sectional view taken along line 2-2 in FIG. 1, illustrating the substrate processing apparatus according to the present embodiment, cut in the horizontal direction.
• FIG. 3 is a cross-sectional view taken along the line 3-3 in FIG. 2, illustrating the processing container of the substrate processing apparatus according to the present embodiment, cut along a vertical plane along the width direction.
• FIG. 4 is a side view illustrating a main exhaust slit and a sub-exhaust slit formed in the inner tube of the processing container of the substrate processing apparatus according to the present embodiment, viewed from the outer tube side.
• FIG. 1 is a front view illustrating a substrate processing apparatus according to an embodiment of the present disclosure, partially cut along a vertical plane along the depth direction.
• FIG. 2 is a sectional view taken along line 2-2 in FIG. 1, illustrating the substrate processing apparatus according to the present embodiment, cut in
• FIG. 5 is a cross-sectional view illustrating a first injection device that injects source gas in the substrate processing apparatus according to the present embodiment, cut in a horizontal direction.
• FIG. 6 is a block diagram illustrating the control system of the control unit of the substrate processing apparatus according to the present embodiment.
• FIG. 7 is a flowchart illustrating the substrate processing process according to this embodiment.
• FIG. 8 is a diagram illustrating the distribution of the raw material gas concentration inside the cylinder part using a simulation model when the distance between the centers of the two first injection devices of the substrate processing apparatus according to the present embodiment is 22 mm. It is.
• FIG. 9 is a graph illustrating a simulation result for analyzing the relationship between the uniformity of the raw material gas concentration and the distance between the centers of the two first injection devices.
• FIG. 9 is a graph illustrating a simulation result for analyzing the relationship between the uniformity of the raw material gas concentration and the distance between the centers of the two first injection devices.
• FIG. 10A shows the flow and partial pressure of the raw material gas inside the cylindrical portion when the first injection device has one row of ejection holes and a pair of sub-exhaust slits are not provided in the substrate processing apparatus according to the present embodiment.
• FIG. 10B shows the flow and partial pressure of the raw material gas inside the cylindrical part when the first injection device has three rows of ejection holes and a pair of sub-exhaust slits are not provided in the substrate processing apparatus according to the present embodiment.
• FIG. FIG. 10C shows the raw material gas inside the cylindrical part when the first injection device has three rows of ejection holes and a pair of sub-exhaust slits in a substrate processing apparatus according to a seventh modification of the present embodiment.
• FIG. 10B shows the flow and partial pressure of the raw material gas inside the cylindrical part when the first injection device has three rows of ejection holes and a pair of sub-exhaust slits are not provided in the substrate processing apparatus according to the present embodiment.
• FIG. 10C shows the raw
• FIG. 2 is a diagram illustrating the flow and distribution of partial pressure.
• FIG. 11 is a diagram illustrating conditions for generating a return flow inside the cylindrical portion of the substrate processing apparatus according to the present embodiment, with conditions depending on the shape of the first injection device and the flow rate of the source gas.
• FIG. 12A is a diagram illustrating a substrate processing apparatus according to a first modification example in which six first injection devices are provided.
• FIG. 12B is a diagram illustrating a substrate processing apparatus according to a second modification example in which a plurality of first injection devices are arranged apart from the substrate.
• FIG. 12C shows a third modification in which a side wall having a slit is provided between the first injection device and the substrate, and the injection holes of the plurality of first injection devices open toward the side wall opposite to the substrate.
• FIG. 2 is a diagram illustrating a substrate processing apparatus according to an example.
• FIG. 12D shows a fourth modified example in which a side wall having a slit is provided between the first injection device and the substrate, and the injection holes of the plurality of first injection devices open toward the side wall having the slit.
• FIG. 2 is a diagram illustrating such a substrate processing apparatus.
• FIG. 12E shows that the plurality of first injection devices are arranged apart from the substrate, a side wall having a slit is provided between the first injection devices and the substrate, and the injection holes of the plurality of first injection devices are It is a figure explaining the substrate processing apparatus concerning the 5th modification which opens toward the side wall which has a slit.
• FIG. 13 is a perspective view illustrating a substrate processing apparatus according to a sixth modification in which fins are provided in each of the main exhaust slit and the sub-exhaust slit.
• FIGS. 1 to 13 Note that the drawings used in the following explanation are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings do not necessarily match the reality. Moreover, the dimensional relationship of each element, the ratio of each element, etc. do not necessarily match between a plurality of drawings.
• each element is not limited to one, and a plurality of elements may exist. Further, in the drawings, substantially the same elements are denoted by the same reference numerals, and repeated explanation in the specification will be omitted.
• the substrate processing apparatus 10 includes a control section 280 that controls each section and a processing furnace 202, and the processing furnace 202 has a heater 207 that is a heating means.
• the heater 207 has a cylindrical shape and is installed in the vertical direction of the apparatus by being supported by a heater base (not shown).
• the heater 207 also functions as an activation mechanism that activates the processing gas with heat. Note that details regarding the control unit 280 will be described later.
• reaction tube 203 serving as a processing tube constituting a reaction container is arranged upright and concentrically with the heater 207.
• Reaction tube 203 corresponds to the processing container of the present disclosure.
• the reaction tube 203 is made of a heat-resistant material such as quartz (SiO 2 ) or silicon carbide (SiC).
• the substrate processing apparatus 10 is a so-called hot wall type.
• the reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 provided to surround the inner tube 12. That is, the outer tube 14 and the inner tube 12 constitute a reaction tube 203.
• the outer tube 14 surrounds the inner tube 12 to form a gap as an exhaust space S between the outer tube 14 and the cylindrical portion.
• the inner tube 12 is arranged concentrically with the outer tube 14.
• the inner tube 12 is an example of a tube member.
• the inner tube 12 has an upper portion covered and a side wall serving as a cylindrical portion that accommodates a plurality of substrates inside. Specifically, as shown in FIG. 1, the inner tube 12 is formed in a ceiling shape with the lower end open and the upper end closed with a flat wall. Further, the outer tube 14 is also formed in a ceiling shape with the lower end open and the upper end closed with a flat wall.
• a supply buffer 222 as a nozzle chamber is formed in the exhaust space S formed between the inner tube 12 and the outer tube 14. That is, the supply buffer 222 is a supply space in which a nozzle for supplying processing gas is arranged. Note that details of the supply buffer 222 will be described later.
• a processing chamber 201 for processing a wafer 200 as a substrate is formed inside the inner tube 12. Further, the processing chamber 201 is capable of accommodating a boat 217 which is an example of a substrate holder capable of holding the wafers 200 in a horizontal position and vertically aligned in multiple stages, and the inner tube 12 is capable of accommodating the accommodated wafers 200. surround. The plurality of wafers 200 are arranged inside the cylindrical portion of the inner tube 12 along the axis of the cylindrical portion. Note that details regarding the inner tube 12 will be described later.
• the lower end of the reaction tube 203 is supported by a cylindrical manifold 226.
• the manifold 226 is made of a metal such as a nickel alloy or stainless steel, or a heat-resistant material such as SiO 2 or SiC.
• a flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is installed on this flange.
• An airtight member 220 such as an O-ring is placed between this flange and the lower end of the outer tube 14 to keep the inside of the reaction tube 203 airtight.
• a seal cap 219 is airtightly attached to the opening at the lower end of the manifold 226 via an airtight member 220 such as an O-ring, and the opening side at the lower end of the reaction tube 203, that is, the opening of the manifold 226 is airtightly attached. It's blocked.
• the seal cap 219 is made of metal such as nickel alloy or stainless steel, and is formed into a disc shape. Seal cap 219 may be configured to be coated on the outside with a heat resistant material such as SiO 2 or SiC.
• a boat support stand 218 for supporting the boat 217 is provided on the seal cap 219.
• the boat support stand 218 is made of a heat-resistant material such as SiO 2 or SiC, and functions as a heat insulator.
• the boat 217 is erected on a boat support stand 218.
• the boat 217 is made of a heat-resistant material such as SiO 2 or SiC.
• the boat 217 has a bottom plate (not shown) fixed to a boat support stand 218 and a top plate disposed above the bottom plate, and a plurality of columns 217a are provided between the bottom plate and the top plate. has been erected.
• the boat 217 holds a plurality of wafers 200 to be processed in the processing chamber 201 inside the inner tube 12. As shown in FIG. 2, the plurality of wafers 200 are supported by a support 217a of a boat 217 so as to maintain a horizontal posture while being spaced apart from each other and with their centers aligned with each other.
• the loading direction of the plurality of wafers 200 is the axial direction of the reaction tube 203. That is, the center of the substrate is aligned with the center axis of the boat 217, and the center axis of the boat 217 is aligned with the center axis of the reaction tube 203.
• a rotation mechanism 267 for rotating the boat is provided below the seal cap 219.
• the rotation shaft 265 of the rotation mechanism 267 passes through the seal cap 219 and is connected to the boat support 218, and the rotation mechanism 267 rotates the boat 217 via the boat support 218, thereby rotating the wafer 200. .
• the seal cap 219 is vertically raised and lowered by an elevator 115 as a lifting mechanism provided outside the reaction tube 203, and the boat 217 can be carried into and out of the processing chamber 201.
• a plurality of nozzle support parts that support a gas nozzle 342a, a return nozzle 340, a return nozzle 341, and a gas nozzle 342c that supply gas to the inside of the processing chamber 201 are installed in the manifold 226 so as to penetrate through the manifold 226. .
• four nozzle supports are installed.
• a return nozzle 341 and a nozzle support portion 350c are illustrated.
• the nozzle support portion is made of a material such as nickel alloy or stainless steel.
• Gas supply pipes 310a to 310d for supplying gas into the processing chamber 201 are connected to one end of the nozzle support portion, respectively. Furthermore, a gas nozzle 342a, a return nozzle 340, a return nozzle 341, and a gas nozzle 342c are connected to the other end of the nozzle support portion, respectively.
• the gas nozzles 342a, 342c are made of a heat-resistant material such as SiO 2 or SiC. Details of the gas nozzles 342a and 342c will be described later.
• the gas supply pipe 310a communicates with a corresponding gas nozzle 342a via a nozzle support part (not shown).
• the gas supply pipe 310d communicates with the corresponding gas nozzle 342c via a nozzle support part (not shown).
• the gas supply pipe 310b communicates with the return nozzle 340 via a nozzle support part (not shown).
• the gas supply pipe 310c communicates with the return nozzle 341 via a nozzle support portion 350c (not shown).
• the gas supply pipe 310a includes, in order from the upstream side in the gas flow direction, a gas supply source 360a that supplies an assist gas as a processing gas, a mass flow controller (MFC) 320a that is an example of a flow rate controller, and an on-off valve.
• a valve 330a is provided respectively.
• the gas supply pipe 310b is provided with a gas supply source 360b, an MFC 320b, a tank 322b, and a valve 330b, which supply a raw material gas as a processing gas, in order from the upstream direction.
• the gas supply pipe 310c is provided with a gas supply source 360c, an MFC 320c, a tank 322c, and a valve 330c, which supply a raw material gas as a processing gas, in order from the upstream direction.
• the gas supply pipe 310d is provided with a gas supply source 360d, an MFC 320d, and a valve 330d, which supply a reaction gas as a processing gas, in order from the upstream direction.
• a reaction gas is supplied from the gas supply pipe 310d.
• Raw material gas is supplied from the gas supply pipes 310b and 310c.
• each gas nozzle of this embodiment is also provided with a gas supply pipe for supplying nitrogen (N 2 ) gas or the like as a purge or assist gas together with an MFC and a valve.
• a plurality of exhaust slits including a main exhaust slit 236 and a sub-exhaust slit 238 are formed on the side wall of the inner tube 12.
• the plurality of exhaust slits exhaust gas within the inner tube 12 to the exhaust space S.
• the main exhaust slit 236 in this embodiment corresponds to the exhaust section of the present disclosure and also corresponds to the main exhaust section.
• the sub-exhaust slit 238 in this embodiment corresponds to the exhaust section of the present disclosure and also corresponds to the sub-exhaust section.
• the number of exhaust slits is three, including one main exhaust slit 236 and two sub-exhaust slits 238. In the present disclosure, the number of exhaust slits may be at least two or more.
• the lower exhaust port 237 is an opening auxiliary opened in the inner pipe below the main exhaust slit 236, and exhausts gas near the boat support platform 218. Note that the lower exhaust port 237 is not essential.
• An exhaust port 230 as an exhaust port is formed in the outer tube 14 of the reaction tube 203.
• the exhaust port 230 is formed below the lower end of the main exhaust slit 236 and communicates the exhaust space S with the outside of the reaction tube 203.
• the exhaust port 230 is arranged on the opposite side of the supply buffer 222, and in plan view, the supply buffer 222, the exhaust port 230, and a main exhaust slit 236, which will be described later, form one straight line passing through the center of the substrate. arranged so that they are lined up on top.
• the exhaust section may be, for example, an exhaust port that has an opening that communicates the inside of the processing chamber 201 with the exhaust space S, and that indirectly exhausts the gas in the processing chamber 201 to the outside via the exhaust space S.
• the opening may be directly connected to an exhaust duct which will be described later. The latter form will be described later as a seventh modification.
• the exhaust duct 231 is a conduit extending outward from the exhaust port 230, and guides exhaust from the reaction tube 203 to a vacuum pump 246 as a vacuum exhaust device.
• the exhaust duct 231 is provided with a pressure sensor 245 that detects the internal pressure of the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as a pressure regulator.
• the downstream side of the vacuum pump 246 is connected to a waste gas treatment device (not shown) or the like. Thereby, by controlling the output of the vacuum pump 246 and the opening degree of the APC valve 244, the processing chamber 201 is configured to be evacuated so that the internal pressure becomes a predetermined pressure (degree of vacuum).
• a temperature sensor (not shown) as a temperature detector is installed inside or on the outer wall of the reaction tube 203, and the power supplied to the heater 207 is adjusted based on temperature information detected by the temperature sensor.
• the temperature inside the processing chamber 201 is configured to have a desired temperature distribution.
• Processing temperature in this specification means the temperature of the wafer 200 or the temperature inside the processing chamber 201
• processing pressure means the pressure inside the processing chamber 201
• processing time means the time during which the processing is continued. The same applies to the following description.
• a boat 217 carrying a plurality of wafers 200 to be batch processed in multiple stages is carried into the processing chamber 201 by a boat support 218 . Then, the wafer 200 carried into the processing chamber 201 is heated to a predetermined temperature by the heater 207.
• An apparatus having such a processing furnace is called a vertical batch apparatus.
• the supply buffer 222 the return nozzles 340, 341 as the first injection device, and the exhaust slits including the main exhaust slit 236 and the sub-exhaust slit 238 in the substrate processing apparatus 10 according to the present embodiment.
• the first injection device is not limited to a tubular member such as a nozzle as long as it is capable of injecting the raw material gas into the processing chamber 201.
• the supply buffer 222 is a region provided on the side wall of the cylindrical portion of the inner tube 12 and protrudes outward from the side wall.
• the supply buffer 222 is formed in the exhaust space S between the outer peripheral surface 12c of the inner tube 12 and the inner peripheral surface 14a of the outer tube 14.
• the supply buffer 222 is divided into three along the circumferential direction of the cylindrical portion by the third partition 18c and the fourth partition 18d.
• the supply buffer 222 is provided between the first partition 18a and the second partition 18b and between the inner tube 12 and the arc-shaped top plate 20 that connects the tip of the first partition 18a and the tip of the second partition 18b. is formed. Both the first partition 18a and the second partition 18b extend from the outer peripheral surface 12c of the inner tube 12 toward the outer tube 14. The first partition 18a and the second partition 18b are both continuous from the inner tube 12.
• a third partition 18c and a fourth partition 18d extending from the outer peripheral surface 12c of the inner tube 12 toward the top plate 20 are formed inside the supply buffer 222.
• the third partition 18c and the fourth partition 18d both extend toward the top plate 20 in parallel with the first partition 18a and the second partition 18b.
• the third partition 18c and the fourth partition 18d are arranged in this order from the first partition 18a side to the second partition 18b side.
• the top plate 20 is separated from the outer tube 14.
• the tip of the third partition 18c on the side opposite to the wafer 200 and the tip of the fourth partition 18d on the side opposite to the wafer 200 reach the top plate 20.
• the first partition 18a, the second partition 18b, the third partition 18c, the fourth partition 18d, and the top plate 20 are examples of partition members.
• a central portion 222b of the divided portions of the supply buffer 222 is formed by the first partition 18a and the second partition 18b.
• Return nozzles 340 and 341 for supplying raw material gas are provided in the central portion 222b.
• a fan shape is formed by the virtual arc connecting both ends of the cylindrical portion in the circumferential direction and the center C1 of the wafer 200.
• the central angle ⁇ of the fan shape is less than 30 degrees. If the central angle ⁇ is 30 degrees or more, the width of the cylindrical portion of the supply buffer 222 in the circumferential direction becomes large, and more gas nozzles are provided in the supply buffer 222, which reduces the manufacturing cost even if an inexpensive tubular nozzle is used. This results in increased equipment downtime.
• the central angle ⁇ of the fan shape is 15 degrees or more and 45 degrees or less.
• the central angle ⁇ of the fan shape is less than 15 degrees, it becomes difficult to uniformly expose the entire surface of the wafer to the source gas. Further, if the central angle ⁇ of the fan shape exceeds 45 degrees, the advantage of this example of arranging a plurality of nozzles is lost for the above-mentioned reason.
• the central angle of the fan shape can be set arbitrarily.
• a supply slit 235b is formed in the central portion 222b of the supply buffer 222 on the inner circumferential surface 12a of the inner tube 12 on the side of the supply slits 235a, 235c.
• the supply slit 235b is open across the entire vertical direction H of the device and the entire width direction W of the device in the central portion 222b. Therefore, the entire return nozzles 340 and 341 in the vertical direction H of the device and the entire width direction W of the device face the wafer 200 inside the cylindrical portion.
• Return nozzles 340 and 341 which are a plurality of gas nozzles, are provided inside the supply buffer 222 and extend along the axis of the cylindrical portion. Specifically, four nozzles, including two gas nozzles 340a and 340b and two gas nozzles 341a and 341b, are arranged along the circumferential direction of the cylindrical portion and are configured to be able to supply the same raw material gas.
• the four gas nozzles 340a, 340b, 341a, and 341b of this embodiment correspond to the plurality of gas nozzles of the present disclosure.
• the four gas nozzles 340a, 340b, 341a, 341b are formed by two return nozzles 340, 341. That is, the gas nozzles 340a and 340b that are adjacent to each other on the lower side in the width direction W in FIG.
• the gas nozzles 341a, 341b are formed by one other return nozzle 341. In the present disclosure, two nozzles may be formed by only one return nozzle.
• the number of return nozzles 340, 341 may be one, or may be any number of two or more.
• the plurality of nozzles do not necessarily have to be return nozzles, and may be, for example, an arrangement of a plurality of mutually independent nozzles (nozzle array).
• the return nozzle 340 has an outgoing pipe corresponding to the gas nozzle 340a and a returning pipe corresponding to the gas nozzle 340b, and the upper end of the outgoing pipe and the upper end of the returning pipe are communicated with each other.
• Raw material gas is distributed to
• the return nozzle 341 is configured to be plane symmetrical to the return nozzle 340.
• the return nozzles 340 and 341 are arranged such that their return pipes are adjacent to each other and their outgoing pipes are separated from each other.
• the inner diameter of the outbound pipe and the inner diameter of the return pipe are the same. In the present disclosure, the inner diameter of the outbound pipe and the inner diameter of the return pipe may be different.
• injection hole The outgoing pipe and the returning pipe of the return nozzles 340, 341 each have three or more rows of injection holes 234 extending along the longitudinal direction of the return nozzle.
• the injection hole 234 provides a cylindrical flow path that communicates the inside and outside of the return nozzle.
• Such injection holes usually form a subsonic jet, but the velocity boundary layer formed may act like a Laval nozzle to achieve a supersonic flow.
• the same source gas is injected from the injection holes 234.
• the raw material gas is injected radially in plan view.
• the gas nozzles 340a, 340b, 341a, and 341b have three or more rows of injection holes arranged along the vertical direction; It may have three or more injection holes arranged along the circumferential direction. Further, in the present disclosure, the number of injection holes can be arbitrarily set to one, two, or four or more.
• the gas nozzles 340a and 341a on both sides in the width direction W face toward the outermost side of the wafer 200.
• Inject raw material gas is injected.
• each injection hole 234 that injects the raw material gas toward the outermost side of the wafer 200 in a plan view is illustrated by a dotted arrow.
• a space is formed between the wafer 200 and each injection hole 234 that injects the source gas toward the outermost side of the wafer 200, in which the source gas can travel straight along the injection direction. That is, no other structure such as a partition wall is provided between the injection hole 234 and the wafer 200 in the injection direction. In the present disclosure, it is not excluded that other structures are arranged between the wafer and at least one injection hole 234 that injects source gas toward the outermost side of the wafer.
• the injection holes 234 are directed toward the outermost side in plan view from the center C1 of the wafer 200 (that is, toward both ends in the width direction W of the apparatus in FIG. 5).
• the diameter R1 of the injection hole 234 that injects the raw material gas is larger than the diameter R2 of the other injection holes 234.
• the diameter of the injection hole 234 that injects source gas outward from the center C1 of the wafer 200 among the injection holes 234 may be smaller than or equal to the diameter of the other injection holes 234 .
• the gas nozzle 340a of the return nozzle 340 on the left side of the virtual plane A in FIG. 5 is an outgoing pipe
• the gas nozzle 340b on the right side is a returning pipe.
• the injection direction F1 of the rightmost injection hole 234 is closest to the gas nozzle 340b of the adjacent return pipe.
• the injection direction F2 of the leftmost injection hole 234 is closest to the gas nozzle 340a of the adjacent outbound pipe.
• the injection direction F1 of the rightmost injection hole 234 of the gas nozzle 340a of the outgoing pipe and the injection direction F2 of the leftmost injection hole 234 of the gas nozzle 340b of the return pipe intersect at the intersection FX.
• the intersection FX is illustrated inside the central portion 222b of the supply buffer 222.
• the inner diameter of the outbound pipe and the inner diameter of the return pipe have the same radius r.
• the first injection direction F1 and the second injection direction F2 are, in plan view, a distance within 3r from the center C2 of the outgoing pipe and a distance within 3r from the center C2 of the return pipe, outside the wafer 200. In other words, they intersect at a position away from the wafer 200.
• the intersection point FY of each injection direction can be similarly defined between the gas nozzle 340b of the return nozzle 340 and the gas nozzle 341b of the return nozzle 341 that are adjacent to each other.
• intersection FY is located away from the wafer 200 within a distance of 3r from the center C2 of the outbound pipe and within 3r from the center C2 of the return pipe. Furthermore, if the distance between the center C2 and the intersection FX is made equal to the distance between the center C2 and the intersection FY, there is a possibility that the gases can be mixed more uniformly.
• the position of the intersection between the first injection direction and the second injection direction is not limited to the position of the intersection in this embodiment. Further, only the state in which the first injection direction F1 and the second injection direction F2 intersect within the supply buffer 222 away from the wafer 200 may be realized independently. Further, when the inner diameter of the outgoing pipe and the inner diameter of the returning pipe have the same radius r, the first injection direction F1 and the second injection direction F2 are within a distance of 3r from the center C2 of the outgoing pipe in plan view, and , may be independently realized only when they intersect at a position away from the wafer 200 within a distance of 3r from the center C2 of the return pipe.
• a plurality of exhaust slits including a main exhaust slit 236 and a sub-exhaust slit 238 are formed on the side wall of the cylindrical portion, and exhaust the source gas from inside the cylindrical portion.
• main exhaust slit 236 is not required.
• the main exhaust slit 236 is formed in the side wall of the cylindrical portion on the opposite side of the supply buffer 222 with respect to the center C1 of the wafer 200.
• the main exhaust slit 236 opens on the side of each wafer 200 and exhausts the source gas and the like that flowed over the wafer 200.
• the main exhaust slit 236 may be formed as a single opening extending between the sides of the uppermost wafer 200 and the lowermost wafer 200, or as a plurality of holes distributed therebetween.
• the two sub-exhaust slits 238 open on both sides of the virtual plane A set inside the cylindrical portion.
• the virtual plane A is set to pass through the circumferential center of the cylindrical portion at the boundary between the supply buffer 222 and the cylindrical portion and the axis of the cylindrical portion in plan view.
• the axis of the cylindrical portion overlaps with the center of the wafer 200.
• each first virtual line L1 is set which connects the center of the sub-exhaust slit 238 and the center C1 of the wafer 200.
• the angle between the first imaginary line L1 and the imaginary plane A is an obtuse angle. In the present disclosure, the angle between the first virtual line L1 and the virtual surface A is not limited to an obtuse angle.
• the width of each of the two sub-exhaust slits 238 in the circumferential direction of the cylindrical portion is smaller than the width of the main exhaust slit 236 at the same height.
• the width of the secondary exhaust slit 238 may be greater than or equal to the width of the main exhaust slit 236.
• the return nozzles 340, 341 and the two sub-exhaust slits 238 are configured symmetrically with respect to the virtual plane A.
• the opening width W1 of the main exhaust slit 236 along the circumferential direction of the cylindrical portion is on the side opposite to the exhaust port 230 along the axis of the cylindrical portion (i.e., It becomes narrower as it goes from the upper side in the middle toward the exhaust port 230 side (that is, the lower side in FIG. 4).
• the opening width of each of the pair of sub-exhaust slits 238 along the circumferential direction of the cylindrical part varies from the side opposite to the sub-exhaust port (i.e., the upper side in FIG. 4) to the sub-exhaust slit along the axis of the cylindrical part. It becomes narrower toward the exhaust port (ie, the lower side in FIG. 4). Illustration of the sub-exhaust port is omitted.
• the opening width along the circumferential direction of the cylindrical portion of each of the main exhaust slit 236 and the pair of sub-exhaust slits 238 can be set arbitrarily. Note that in FIG. 4, illustration of the counter buffer is omitted for ease of viewing. The counter buffer will be explained later.
• the substrate processing apparatus 10 further includes tanks 322b and 322c connected to return nozzles 340 and 341.
• the tanks 322b and 322c can store the raw material gas alone so that the raw material gas is not mixed with the carrier gas.
• the tanks 322b and 322c supply the accumulated raw material gas to the return nozzles 340 and 341 almost simultaneously in a pulsed manner through on-off valves.
• the raw material gas accumulated in the tanks 322b, 322c is supplied from the tanks 322b, 322c toward the reaction tube 203 at a large flow rate.
• the raw material gas supplied at a large flow rate is also called "flash flow.”
• the raw material gas of the flash flow flows at a relatively high speed over the surface of the wafer 200 inside the cylindrical portion of the inner tube 12 during the film forming process.
• High-speed gas flow is one of the most effective means for promoting gas exchange inside microstructures such as trenches and holes formed on the surface of the wafer 200, and is particularly useful in processing patterned wafers with a high aspect ratio. It is.
• the present disclosure is not limited to flash supply of raw material gas, and may be applied to, for example, large-flow supply of ammonia (NH 3 ) or the like as a purge gas using a general MFC. Therefore, in the present disclosure, the flash supply tanks 322b and 322c are not essential.
• the total instantaneous maximum flow rate of the raw material gas injected in a pulse form from each of the return nozzles 340 and 341 is 1 slm or more and 300 slm or less. If the total instantaneous maximum flow rate of the source gas is less than 1 slm, the flow rate is insufficient, the source gas may change in quality while flowing over the wafer 200, gas replacement within the microstructure may be insufficient, and the film may deteriorate. Quality and uniformity deteriorate. Furthermore, if the total instantaneous maximum flow rate of the raw material gas exceeds 300 slm, the effect of promoting replacement is saturated while the flow rate of the raw material gas becomes too large, resulting in an increase in the cost of the raw material gas.
• the total instantaneous maximum flow rate of the raw material gas is 12 slm or more and 50 slm or less. If the total instantaneous maximum flow rate of the raw material gases is less than 12 slm, the flow velocity on the wafer 200 may not be sufficiently high (for example, 10 m/s or more), and the formed film will have insufficient step coverage. Further, when the total instantaneous maximum flow rate of the raw material gas exceeds 50 slm, the configuration of the supply system for accumulating the raw material gas in the tank at high pressure without decomposing it becomes complicated, and the cost of the apparatus increases. In the present disclosure, the total instantaneous maximum flow rate of the source gas injected in a pulsed manner is not limited to this, and can be changed as appropriate.
• the substrate processing apparatus 10 further includes gas nozzles 342a and 342c as second injection devices that supply assist gas.
• Gas nozzles 342a and 342c are provided on both sides 222a and 222c of supply buffer 222, respectively.
• the second injector is not essential. Note that the second injection device is not limited to a tubular member such as a nozzle as long as it is capable of injecting the raw material gas.
• partition walls are provided between the portions 222a and 222c on both sides in the width direction W of the supply buffer 222 and the cylinder portion. Further, as shown in FIG. 3, supply slits 235a and 235c are formed in the partition wall.
• the gas nozzles 342a, 342c have a plurality of injection holes 344 along the vertical direction.
• the substrate processing apparatus 10 further includes a counter nozzle 343 as a third injection device that supplies assist gas.
• One or more counter nozzles 343 are installed as counter nozzles at a position where the angle between the second imaginary line L2 connecting the ejection direction of the counter nozzle 343 and the center C1 of the wafer 200 and the imaginary plane A is an obtuse angle in plan view. Can be provided.
• the counter nozzle 343 is housed inside the counter buffer 222d.
• the counter buffer 222d is a region provided on the side wall of the cylindrical portion of the inner tube 12 and protrudes outward from the side wall.
• the counter buffer 222d may be provided between the main exhaust slit 236 and the two sub-exhaust slits 238 or between the supply buffer 222 and the two sub-exhaust slits 238 in the circumferential direction of the cylindrical portion.
• counter nozzle 343 is not essential.
• a temperature sensor may be placed in the counter buffer 222d.
• the third injection device is not limited to a tubular member such as a nozzle as long as it can inject the processing gas.
• FIG. 6 is a block diagram showing the substrate processing apparatus 10, and the control unit 280 (ie, controller) of the substrate processing apparatus 10 is configured as a computer.
• This computer includes a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I/O port 121d.
• CPU Central Processing Unit
• RAM Random Access Memory
• the RAM 121b, storage device 121c, and I/O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e.
• An input/output device 122 configured as, for example, a touch panel is connected to the control unit 280.
• the storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like.
• a control program for controlling the operation of the substrate processing apparatus, a process recipe in which procedures, conditions, etc. of substrate processing to be described later are described, and the like are stored in a readable manner.
• the process recipe is a combination of instructions that causes the control unit 280 to execute each procedure in the substrate processing process described later to obtain a predetermined result, and functions as a program.
• process recipes, control programs, etc. will be collectively referred to as simply programs.
• the RAM 121b is configured as a memory area (ie, a work area) in which programs, data, etc. read by the CPU 121a are temporarily held.
• the I/O port 121d is connected to the above-mentioned MFCs 320a to 320d, valves 330a to 330d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, rotation mechanism 267, elevator 115, etc.
• the CPU 121a is configured to read and execute a control program from the storage device 121c, and read a process recipe from the storage device 121c in response to input of an operation command from the input/output device 122.
• the CPU 121a is configured to control the flow rate adjustment operations of various gases by the MFCs 320a to 320d, the opening and closing operations of the valves 330a to 330d, and the opening and closing operations of the APC valve 244 in accordance with the contents of the read process recipe. Further, the CPU 121a is configured to control the pressure adjustment operation of the APC valve 244 based on the pressure sensor 245, the start and stop of the vacuum pump 246, and the temperature adjustment operation of the heater 207 based on the temperature sensor. Further, the CPU 121a is configured to control the rotation and rotational speed adjustment operation of the boat 217 by the rotation mechanism 267, the raising and lowering operation of the boat 217 by the elevator 115, and the like.
• the control unit 280 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer.
• the control unit 280 of this embodiment can be configured by preparing an external storage device 123 that stores the above-described program and installing the program into a general-purpose computer using this external storage device 123.
• the external storage device include a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, a semiconductor memory such as a USB memory, and the like.
• a substrate processing method using the substrate processing apparatus 10 according to this embodiment will be explained with reference to FIG.
• a cycle process in which a film formation process is performed by alternately supplying a source gas and a reaction gas to a process chamber will be described.
• a Si raw material gas is used as an example of a source, and a N-containing gas is used as a reactant, so that a Si nitride film (Si 3 N 4 film, hereinafter also referred to as an SiN film) is formed on the wafer 200. be done.
• Si 3 N 4 film hereinafter also referred to as an SiN film
• the SiN film is produced by a cycle in which the film forming process 1 in step S3, the film forming process 2 in step S4, the film forming process 3 in step S5, and the film forming process 4 in step S6 in FIG. 7 are performed non-simultaneously. It is formed by performing the process a predetermined number of times, which is one or more times.
• the film forming process 1 is a process of supplying source gas to the wafer 200 in the inner tube 12.
• the film forming process 2 is an exhaust process in which residual source gas is removed from the inner tube 12.
• the film forming step 3 is a step of supplying a reactive gas containing N to the wafer 200 in the inner tube 12 .
• the film forming step 4 is an exhaust step in which residual reaction gas is removed from the inner tube 12.
• step S1 in FIG. 7 the wafers 200 are loaded into the boat 217.
• the substrate is accommodated inside the cylindrical portion of the inner tube 12.
• step S2 in FIG. 7 after the boat 217 is carried into the inner tube 12, the pressure and temperature inside the inner tube 12 are adjusted.
• step S4 in FIG. 7 after the boat 217 is carried into the inner tube 12, the pressure and temperature inside the inner tube 12 are adjusted.
• step S3 in FIG. 7 the source gas is injected toward the wafer 200 using the first injection device, and the main exhaust slit 236 and the two sub-exhaust slits 238 are used to The injected raw material gas is exhausted to the outside of the cylinder.
• flash supply is performed at least once in which the raw material gas and the carrier gas are released from the gas nozzles 340a, 340b, 341a, and 341b instantaneously, that is, in a relatively short period of time.
• assist gas may be injected from the gas nozzles 342a, 342c or the counter nozzle 343.
• the flow rate of the assist gas may change accordingly.
• a gas containing Si and halogen can be used as the raw material gas.
• Si and halogen-containing gases include tetrachlorosilane (SiCl 4 , abbreviation: STC) gas, hexachlorodisilane (Si 2 Cl 6 , abbreviation: HCDS) gas, and octachlorotrisilane (Si 3 Cl 8 , abbreviation: OCTS).
• Inorganic chlorosilane gas such as gas can be used.
• Si and halogen-containing gas one or more of these can be used.
• "large flow rate” means a state in which the mass flow rate [kg/s] is 8 ⁇ 10 ⁇ 4 kg/s or more.
• the mass flow rate [kg/s] that is 8 ⁇ 10 ⁇ 4 kg/s or more corresponds to, for example, about 4 slm or more in the volumetric flow rate [slm] of HCDS gas.
• the mass flow rate [kg/s] that is 8 ⁇ 10 ⁇ 4 kg/s or more corresponds to about 38 slm or more in terms of the volumetric flow rate [slm] of N 2 gas.
• 1 [slm] 1 [L/m].
• the volume flow rate [slm] is calculated by "mass flow rate/density of gas species". Therefore, the volumetric flow rate can be used as a flow rate applicable to the present disclosure regardless of the gas type.
• Typical large volumetric gas flow rates used in applicable membrane types include, for example, approximately 5.5 slm or more for titanium tetrachloride (TiCl 4 ) and approximately 30 slm for oxygen (O 2 ).
• TiCl 4 titanium tetrachloride
• O 2 oxygen
• the source gas is adsorbed onto the surface of the wafer 200.
• a film containing Si is formed on the base film of the wafer 200 by adsorption.
• the substrate processing method according to the present embodiment can be configured by the above steps S1 and S3.
• step S4 in FIG. 7 In the film forming process 2, in step S4 in FIG. 7, first, the supply of source gas and carrier gas is stopped. Next, by controlling an exhaust pump such as the vacuum pump 246 and the APC valve 244, the source gas is evacuated so that the pressure inside the reaction tube 203 becomes a predetermined pressure (ie, the degree of vacuum). By evacuation, the raw material gas remaining in the inner tube 12 is exhausted from the inner tube 12 to the outside. In addition, in the film forming step 2, if an inert gas, for example, N 2 gas, is supplied into the inner tube 12 as a purge gas, the effect of exhausting the remaining raw material gas is further enhanced.
• an inert gas for example, N 2 gas
• a reaction gas is supplied into the inner tube 12 using the second injection device.
• the reaction gas for example, N-containing gas, Si-free gas, oxidizing gas, and reducing gas such as hydrogen (H 2 ) can be used.
• H 2 reducing gas
• step S5 for example, NH 3 gas is supplied as a reaction gas into the inner tube 12 while being exhausted from a plurality of exhaust slits.
• the N-containing gas By supplying the N-containing gas, the Si-containing film on the base film of the wafer 200 reacts with the N-containing gas.
• a SiN film is formed on the wafer 200 by the reaction.
• a mixed gas of O 2 and H 2 is used as the reaction gas, SiO 2 is formed.
• Step S6 in FIG. 7 After forming the film, the pressure inside the reaction tube 203 is brought to a predetermined pressure ( The reaction gas is evacuated to a vacuum level (degree of vacuum). By vacuum evacuation, the N2- containing gas remaining in the inner tube 12 after contributing to film formation is exhausted from the inner tube 12 to the outside.
• an inert gas for example N 2 gas used as a carrier gas
• the effect of exhausting the residual N 2 -containing reaction gas from the inner tube 12 is achieved. It increases further.
• film forming steps 1 to 4 are considered to be one cycle, and in step S7 in FIG. 7, a SiN film with a predetermined thickness is formed on the wafer 200 by performing the cycles of film forming steps 1 to 4 a predetermined number of times. can do.
• film forming steps 1 to 4 are repeated multiple times. In the present disclosure, film forming steps 1 to 4 may be performed once without being repeated.
• the plurality of processing gases there may be one gas that is dominant in terms of film quality, particularly uniformity.
• the first injector if it is important for good step coverage to uniformly adsorb the chlorosilane-based gas of the feed gas onto the adsorption sites within the microstructure, only the feed gas can be supplied planarly by the first injector.
• both the flow rate and partial pressure of the source gas or intermediate can be maintained within predetermined ranges on the wafer surface.
• exposure of the wafer to the reactive gas does not require as much uniformity as the source gas.
• step S8 in FIG. 7 the pressure inside the inner tube 12 is returned to normal pressure (that is, atmospheric pressure).
• an inert gas such as N 2 gas is supplied into the inner tube 12 and exhausted.
• the inside of the inner tube 12 is purged with inert gas, and the gas remaining inside the inner tube 12 is removed from the inside of the inner tube 12.
• the atmosphere inside the inner tube 12 is replaced with an inert gas, and the pressure inside the inner tube 12 is returned to normal pressure.
• step S9 in FIG. 7 if the wafer 200 is unloaded from the inner tube 12, the substrate processing according to the present embodiment is completed.
• wafer used in this specification may mean the wafer itself, or a laminate of the wafer and a predetermined layer or film formed on the surface of the wafer.
• wafer surface used in this specification may mean the surface of the wafer itself, or the surface of a predetermined layer formed on the wafer.
• forming a predetermined layer on a wafer refers to forming a predetermined layer directly on the surface of the wafer itself, or a layer formed on the wafer, etc. Sometimes it means forming a predetermined layer on top of.
• substrate when the word “substrate” is used, it has the same meaning as when the word "wafer” is used.
• FIG. 8 shows an example of the distribution of the raw material gas concentration inside the cylindrical portion when the distance d between the centers of two gas nozzles 345 corresponding to the gas nozzles 340b and 341b of the substrate processing apparatus according to the present embodiment is 22 mm. has been done.
• the substrate processing apparatus is not provided with a sub-exhaust slit, but only with a main exhaust slit.
• FIG. 8 exemplifies a state in which portions with a relatively high concentration of source gas are located at the outer edges of both sides of the substrate and on the main exhaust slit side in the depth direction D of the apparatus.
• FIG. 9 illustrates the analysis results of the relationship between the uniformity of the raw material gas concentration and the distance d between the centers of two gas nozzles. Each gas nozzle had three injection holes. As shown in FIG. 9, the uniformity of the source gas concentration on the substrate is expressed as a standard deviation [ ⁇ %] with respect to the average concentration [%]. The average concentration [%] is the concentration of source gas per unit area over the entire substrate surface.
• a value of 25% is plotted as the uniformity of the raw material gas concentration when the distance d between the centers of the two gas nozzles is 0 mm.
• the center-to-center distance d is 0 mm, it means that the number of gas nozzles is one.
• the standard deviation was suppressed to about 7% or less, thereby further improving the uniformity of the raw material gas concentration. Furthermore, it has been found that when the distance d between the centers of the two gas nozzles is 60 mm or more and 80 mm or less, the standard deviation is suppressed to about 3% or less, thereby further improving the uniformity of the raw material gas concentration.
• FIG. 10A shows the flow of source gas in an analytical model in which the injection holes of the gas nozzles 340a and 340b are each in one row in the substrate processing apparatus according to the present embodiment, and the exhaust slit is only one main exhaust slit 236.
• the partial pressure distribution is illustrated. That is, the pair of sub-exhaust slits 238 are not provided.
• FIG. 10B shows the flow of raw material gas in an analysis model in which the injection holes of the gas nozzles 340a and 340b are arranged in three rows each in the substrate processing apparatus according to the present embodiment, and the number of exhaust slits is only one main exhaust slit 236. Flow and partial pressure distribution are illustrated. Other analysis conditions are similar to those in the case of FIG. 10A.
• the injection holes of the gas nozzles 340a and 340b are arranged in three rows, and one main exhaust slit 236 and two sub-exhaust slits 238 are provided.
• the flow and partial pressure distribution of raw material gas in the analytical model are illustrated.
• Other analysis conditions are similar to those in the case of FIG. 10A.
• the third analysis example five patterns were set according to the mutually different shapes of the gas nozzles 340a and 340b.
• the number of injection holes in each of the two gas nozzles 340a and 340b was one, and the diameter of the injection hole was 4.6 mm.
• each injection hole in each of the two gas nozzles 340a, 340b was two along the circumferential direction of the gas nozzles 340a, 340b.
• each injection hole is arranged so that the angle between the injection direction of each injection hole and the direction from the center of the gas nozzles 340a, 340b toward the center of the wafer is 30 degrees in plan view. It was done.
• the diameter of the injection hole was 1.9 mm.
• the number of injection holes in each of the two gas nozzles 340a and 340b was three along the circumferential direction of the gas nozzles.
• the injection holes were arranged so that the angle between adjacent injection holes was 30 degrees in plan view.
• the injection direction of the central injection hole among the three injection holes was aligned in the direction from the center of the gas nozzles 340a, 340b toward the center of the wafer.
• the diameter of the injection hole was 1.9 mm.
• the number of injection holes in each of the two gas nozzles 340a and 340b was four along the circumferential direction of the gas nozzles.
• the injection holes were arranged so that the angle between adjacent injection holes was 30 degrees in plan view. Also, in plan view, the angle between the injection direction of the two central injection holes among the four injection holes and the direction from the center of the gas nozzles 340a and 340b toward the center of the wafer is 30 degrees, respectively. injection holes were arranged. The diameter of the injection hole was 1.9 mm.
• the number of injection holes in each of the two gas nozzles 340a and 340b was four along the circumferential direction of the gas nozzle 340b.
• the injection holes were arranged so that the angle between adjacent injection holes was 20 degrees in plan view. Also, in plan view, the angle between the injection direction of the two central injection holes among the four injection holes and the direction from the center of the gas nozzles 340a and 340b toward the center of the wafer is 20 degrees, respectively. injection holes were arranged.
• the injection range in the fourth pattern centered on the direction from the center of the gas nozzles 340a, 340b toward the center of the wafer was set wider than the injection range in the fifth pattern.
• the diameter of the injection hole was 1.9 mm.
• the inner diameter and thickness of the cylinders of the gas nozzles 340a and 340b were set to be the same throughout the first pattern to the fifth pattern.
• a partition wall is provided between the central portion 222b of the supply buffer 222 where the gas nozzles 340a and 340b are arranged and the cylindrical portion of the inner tube 12, and the supply slit 235a in FIG.
• a slit was provided that opened opposite the injection hole.
• any of the second to fifth patterns as in the present embodiment shown in FIG. was not provided with a bulkhead.
• the analysis was performed with five different flow rates per gas nozzle: 1 slm, 5 slm, 12 slm, 20 slm, and 50 slm.
• a return flow continuously existed regardless of the flow rate per gas nozzle of 5 slm, 12 slm, 20 slm, and 50 slm.
• the second pattern it was found that the smaller the flow rate per gas nozzle, the more suppressed the generation of the return flow.
• FIG. 12A illustrates a substrate processing apparatus according to a first modified example in which six gas nozzles corresponding to the gas nozzle 340a and the like constituting the first injection device are provided. Also in the first modification, the same effects as in this embodiment can be obtained.
• the supply buffer 222 is configured such that a constant distance M is formed between the center of each gas nozzle and the wafer 200.
• the fixed distance M is, for example, at least twice the Kolmogorov length and at most 10 times the Kolmogorov length.
• the fixed distance can be set arbitrarily.
• the same effects as the present embodiment can be obtained in the second modification as well. Furthermore, in the second modification, by arranging the plurality of gas nozzles apart from the wafer 200, mixing of the source gases is promoted before the source gases injected from the plurality of gas nozzles reach the wafer 200. . Therefore, the source gas whose mixing is promoted can be sent onto the surface of the wafer 200.
• the injection holes of a plurality of gas nozzles 345 corresponding to the gas nozzle 340a etc. open toward the side wall on the side opposite to the wafer 200 (that is, the upper side in FIG. 12C). Also in the third modification, the same effects as in this embodiment can be obtained. Furthermore, in the third modification, the injection holes of the plurality of gas nozzles 345 open toward the side wall opposite to the wafer 200, so that the injected source gas collides with the side wall opposite to the wafer 200.
• the source gas that has collided with the side wall opposite to the wafer 200 heads toward the ventilation slit 380a of the partition wall 380 provided between the gas nozzle 345 and the wafer 200. The source gas reaches the wafer 200 through the ventilation slit 380a.
• the ventilation slit 380a of the third modification is an example of a ventilation port having an opening.
• the shape of the opening of the vent formed in the partition wall is not limited to a slit shape, and can be arbitrarily changed to, for example, a hole shape.
• the vent is an example of a vent that is formed between the gas nozzle 345 and the wafer 200 and allows source gas to pass through to the wafer 200 side.
• the ventilation portion is not limited to the ventilation hole in the partition wall.
• a ventilation device having a tubular overall shape with a gas flow path formed inside may be provided as the ventilation section.
• the third modification mixing of the source gases is promoted after the source gases are injected from the gas nozzle 345 until they reach the wafer 200.
• the source gas whose mixing has been promoted can be sent onto the surface of the wafer 200.
• the injection holes of a plurality of gas nozzles such as the gas nozzle 340a, open toward the side wall provided between the gas nozzle and the wafer 200. Also in the fourth modification, the same effects as in this embodiment can be obtained. Furthermore, in the fourth modification, the injection holes of the plurality of gas nozzles open toward the partition wall 380 provided between the gas nozzles and the wafer 200, so that the injected source gas collides with the partition wall 380.
• the source gas that collided with the partition wall 380 reaches the wafer 200 through the ventilation slit 380a of the partition wall 380. Therefore, mixing of the source gases is promoted after the source gases are injected from the gas nozzle 340b until they reach the wafer 200. As a result, the source gas whose mixing has been promoted can be sent onto the surface of the wafer 200.
• FIG. 12E illustrates, for example, a fifth modification example in which the configuration of the second modification example and the configuration of the fourth modification example are combined. That is, in the supply buffer 222 according to the fifth modification, the plurality of gas nozzles are arranged apart from the wafer 200 so that a certain distance M is formed between the center of the gas nozzle and the wafer 200, as in the second modification. be done.
• a partition wall 380 having a ventilation slit 380a is provided between the gas nozzle and the wafer 200, and the injection holes of a plurality of gas nozzles corresponding to the gas nozzle 340a etc. It opens toward a partition wall 380 having a ventilation slit 380a. Therefore, in the fifth modification, in addition to the same effects as the present embodiment, it is possible to obtain both the effects of the second modification and the fifth modification.
• the shape of the main exhaust slit 236 and the shape of the pair of sub-exhaust slits 238 are both rectangular.
• a fin 250 protruding from the side wall toward the outer tube 14 is provided on a part of the side wall forming each of the main exhaust slit 236 and the pair of sub-exhaust slits 238 in the cylindrical portion. It is established as
• the protruding length of the fins 250 provided on the side wall of the main exhaust slit 236 is determined from the upper side in FIG. 13, which is the opposite side to the main exhaust port, along the axis direction of the cylindrical portion. 13 becomes shorter toward the bottom. Illustration of the main exhaust port is omitted.
• the protruding length of the fins 250 provided on the side wall of the sub-exhaust slit 238 is determined from the upper side in FIG. 13, which is the opposite side to the sub-exhaust port, along the axis direction of the cylindrical portion in the figure where the sub-exhaust port is located. 13 becomes shorter toward the bottom. Illustration of the sub-exhaust port is omitted.
• the fins 250 equalize the flow rate of the source gas exhausted between the substrates stacked in multiple stages along the axis of the cylinder, that is, equalize the conductance in the vertical direction. can be achieved. Details of the effects of the sixth modification will be described later.
• FIG. 13 shows an example in which the fins 250 are formed in a step-like manner by a plate-like member having five plate-like parts whose protruding lengths are longer from the upper side to the lower side, this is not the case.
• the shape of the exhaust flow rate adjustment section is not limited to a stepped shape.
• the exhaust flow rate adjusting section may be constituted by a plate-like member having a plate-like portion whose protrusion length gradually decreases toward the main exhaust port.
• the exhaust flow rate adjusting section is not limited to a plate-like member, and may be formed of a block-like member, an annular member, or the like.
• the substrate processing apparatus includes a main exhaust buffer 232a formed to airtightly cover the main exhaust slit 236 from the outside of the inner tube 12, and two sub-exhaust slits. 238 from the outside of the inner tube 12.
• the main exhaust buffer 232a and the sub-exhaust buffer 232b are each connected to the exhaust duct 231.
• the main exhaust buffer 232a and the sub-exhaust buffer 232b are formed outside the inner tube and extend in the axial direction of the reaction tube along the distribution of the corresponding main exhaust slits 236 and sub-exhaust slits 238. be done.
• the main evacuation buffer 232a alleviates the pressure gradient therein and cooperates with the main evacuation slit 236 to provide uniform evacuation to the wafer 200.
• the main exhaust buffer 232a corresponds to a main exhaust device that sends source gas to the outside in the present disclosure.
• the two sub-exhaust buffers 232b correspond to two sub-exhaust devices that send source gas to the outside in the present disclosure.
• the main exhaust device is not limited to the main exhaust buffer, and may be any main exhaust space that can alleviate the internal pressure gradient.
• the sub-exhaust device is not limited to the sub-exhaust buffer, and may be any sub-exhaust space that can alleviate the internal pressure gradient.
• the same effects as the present embodiment can be obtained in the seventh modification as well.
• the outer tube 14 is no longer necessary, and a processing container with a single-pipe structure can be adopted.
• the term processing tube refers to each of the inner tube 12 and the outer tube 14, and may particularly include a single tube having the same shape and compressive strength as the inner tube 12 and used alone.
• the substrate processing apparatus 10 includes a reaction tube 203 having an inner tube 12 and an outer tube 14, a supply buffer 222 provided in the cylindrical portion of the inner tube 12, and four tubes provided in the supply buffer 222. It includes gas nozzles 340a, 340b, 341a, and 341b, and two sub-exhaust slits 238 provided in the cylindrical portion.
• the two sub-exhaust slits 238 are formed on the side wall of the cylindrical portion, and are set to pass through the circumferential center of the cylindrical portion at the boundary between the supply buffer 222 and the cylindrical portion and the axis of the cylindrical portion in plan view. An opening is made with the virtual surface A sandwiched from both sides. That is, the two sub-exhaust slits 238 face both sides of the wafer 200 with the virtual plane A sandwiched therebetween.
• the raw material gas injected from the four gas nozzles 340a, 340b, 341a, and 341b is promoted to flow not only toward the center of the wafer 200 in plan view but also toward both sides of the wafer 200.
• the uniformity of the flow of the source gas on the surface of the wafer 200 can be improved during the film forming process.
• the substrate processing apparatus 10 in order to improve the uniformity of the flow of the raw material gas, it is sufficient to form two sub-exhaust slits 238 in the cylindrical portion that sandwich the virtual plane A from both sides, so no separate member is required. As a result, the substrate processing apparatus 10 can be constructed relatively inexpensively and compactly.
• one main exhaust slit 236 is provided in the side wall of the cylindrical portion on the opposite side of the supply buffer 222 with respect to the center C1 of the wafer 200.
• the two sub-exhaust slits 238 are arranged at the same height as the main exhaust slit 236 and apart from the main exhaust slit 236, and sandwich the main exhaust slit 236.
• the angle between each first imaginary line L1 connecting the center of the sub-exhaust slit 238 and the center C1 of the wafer 200 and the imaginary plane A is an obtuse angle.
• the width of each of the two sub-exhaust slits 238 in the circumferential direction of the cylindrical portion is smaller than the width of the main exhaust slit 236.
• the source gas is further dispersed by the main exhaust slit 236 and the two sub-exhaust slits 238, the area where the flow of the source gas decreases around the wafer 200 is reduced. Therefore, the uniformity of the flow of the source gas on the surface of the wafer 200 can be further improved.
• the four gas nozzles 340a, 340b, 341a, and 341b are arranged along the circumferential direction of the cylindrical portion and are configured to be able to supply the same raw material gas. Furthermore, each of the four gas nozzles 340a, 340b, 341a, and 341b has an outgoing pipe and a returning pipe through which the raw material gas flows, and the upper end of the outgoing pipe and the upper end of the returning pipe are communicated with each other, so that the same This is a return nozzle having an injection hole 234 for injecting raw material gas.
• the raw material gas is further dispersed by the four gas nozzles 340a, 340b, 341a, and 341b. Furthermore, the four gas nozzles 340a, 340b, 341a, and 341b can be easily configured with two return nozzles.
• the flow rate of the gas injected to the periphery of the wafer 200 is lower than the flow rate of the gas injected to the center C1 of the wafer 200 by the four gas nozzles 340a, 340b, 341a, and 341b arranged along the circumferential direction of the cylindrical part. Since the flow rate of the injected gas increases, the region around the wafer 200 where the source gas flows at a low speed is reduced. Therefore, the uniformity of the flow of the source gas on the surface of the wafer 200 can be further improved.
• the four gas nozzles 340a, 340b, 341a, and 341b have three or more injection holes 234 arranged along the circumferential direction of the cylinder portion in a plane parallel to the surface of the wafer 200.
• the source gas is radially injected by the three or more injection holes 2344
• the area around the wafer 200 where the flow of the source gas decreases is reduced. Therefore, the uniformity of the flow of the source gas on the surface of the wafer 200 can be further improved.
• the four gas nozzles 340a, 340b, 341a, 341b and the two sub-exhaust slits 238 are configured symmetrically with respect to the virtual plane A. Therefore, the uniformity of the flow of the source gas on the surface of the wafer 200 can be further improved.
• a plurality of wafers 200 are arranged inside the cylinder along the axis of the cylinder.
• the four gas nozzles 340a, 340b, 341a, and 341b are arranged along the circumferential direction of the cylindrical portion and are configured to be able to supply the same raw material gas.
• each of the four gas nozzles 340a, 340b, 341a, and 341b has an outgoing pipe and a returning pipe through which the raw material gas flows, and the upper end of the outgoing pipe and the upper end of the returning pipe are communicated with each other, so that the same It has four gas nozzles 340a, 340b, 341a, and 341b formed by two return nozzles that inject source gas.
• each of the outgoing pipe and the returning pipe of the two return nozzles 340 and 341 has three or more rows of injection holes 234 extending along the longitudinal direction of the return nozzle.
• the injection holes 234 eject the raw material gas radially in a plan view.
• the raw material gas is connected to the four gas nozzles 340a, 340b, 341a, and 341b, and accumulates the raw material gas alone without being mixed with the carrier gas, and the accumulated raw material gas is transferred to the plurality of four gas nozzles 340a, Tanks 322b and 322c are provided that supply water almost simultaneously to 340b, 341a, and 341b in a pulsed manner. Further, the total instantaneous maximum flow rate of the raw material gas injected in a pulsed manner from each of the four gas nozzles 340a, 340b, 341a, and 341b is 5 slm or more.
• the present embodiment in which flash supply of source gas of 5 slm or more is performed is advantageous in that the quality of the formed film can be further improved.
• the diameter R1 of the injection hole 234 that injects the raw material gas from the center C1 of the wafer 200 toward the outermost side is larger than the diameter R2 of the other injection holes 234. can also become large. Therefore, the flow rate of the exhausted raw material gas is more equalized, and the uniformity of the film between the surfaces of the plurality of wafers 200 is improved.
• the source gas is injected between the wafer 200 and one of the three or more injection holes 234 that injects the source gas toward the outermost side of the wafer 200 in plan view.
• a space is formed in which you can move straight along the direction. That is, no other structure is provided as an obstacle that obstructs the flow of the source gas before the source gas reaches the wafer 200. Since the flow rate of the exhaust source gas is more equalized, the uniformity of the film between the surfaces of the plurality of wafers 200 is improved.
• the reaction tube 203 further includes an outer tube 14 that surrounds the cylindrical portion to form an exhaust space S between the cylindrical portion and the cylindrical portion.
• the outer tube 14 has an exhaust port 230 and a pair of sub-exhaust ports (not shown) that communicate the exhaust space S with the outside of the reaction tube 203 . Therefore, the source gas passes through the exhaust space and is exhausted to the outside from the exhaust port 230 and the pair of sub-exhaust ports, so the area around the wafer 200 where the flow of the source gas decreases is reduced. Therefore, the uniformity of the flow of the source gas on the surface of the wafer 200 can be further improved.
• the opening width of one main exhaust slit 236 along the circumferential direction of the cylindrical portion becomes narrower as it goes from the side opposite to the exhaust port 230 toward the exhaust port 230 along the direction of the axis of the cylindrical portion.
• the opening width of each of the two sub-exhaust slits 238 along the circumferential direction of the cylindrical part is set from the opposite side to each of the pair of sub-exhaust ports along the axis of the cylindrical part. It gets narrower as you go. Therefore, the flow rate of the exhausted raw material gas is more equalized between the wafers 200 stacked in multiple stages along the axis direction, so that the uniformity of the film between the surfaces of the plurality of wafers 200 is improved. is improved.
• fins 250 are provided on a part of the side wall forming each of one main exhaust slit 236 and two sub-exhaust slits 238 in the cylindrical portion.
• the fins 250 protrude from the side wall toward the outer tube 14, and the protruding length extends from the side opposite to the main exhaust port and the pair of sub-exhaust ports, respectively, along the direction of the axis of the cylindrical portion. It gets shorter towards the sub-exhaust port. That is, the distance between the inner tube and the outer tube in the exhaust space becomes shorter as seen in plan view toward the main exhaust port and the pair of auxiliary exhaust ports along the vertical direction H.
• the fins 250 are not provided and the distance between the inner tube and the outer tube in the exhaust space is approximately constant in plan view as it goes toward the main exhaust port and the pair of auxiliary exhaust ports.
• the distance between the inner tube and the outer tube is approximately constant, the flow rate of the raw material gas is exhausted from the portion closer to the main exhaust port in one main exhaust slit 236 than from the portion farther from the main exhaust port. It will be higher than the flow rate of the raw material gas.
• the flow rate of the source gas exhausted from the portion close to the sub-exhaust port is greater than the flow rate of the source gas exhausted from the portion far from the sub-exhaust port. That is, the difference in displacement between the top and bottom of one main exhaust slit 236 and two sub-exhaust slits 238 becomes large. As a result, the flow rate of the exhausted source gas becomes more uneven between the wafers 200 stacked in multiple stages along the axis.
• the flow rate of the raw material gas exhausted from the bottom side near the main exhaust port and the sub exhaust port is different from the flow rate of the raw material gas exhausted from the top side due to the fins 250. is suppressed so that it becomes small. Therefore, the flow rate of the exhaust source gas is equalized between the wafers 200 stacked in multiple stages along the axial direction. As a result, the uniformity of the film between the surfaces of the plurality of wafers 200 is improved. Further, there is no need to process the side wall of the cylindrical portion so that the opening width of the slit becomes narrower from the side opposite to the exhaust port toward the exhaust port along the axial direction.
• a main exhaust buffer 232a and two sub-exhaust buffers 232b are provided, each of which sends the raw material gas to the outside. Therefore, exhausting of the raw material gas to the outside is promoted.
• the first injection direction F1 is closest to the return pipe
• the first injection direction F1 is the closest to the outgoing pipe.
• the second injection direction F2 intersects with the second injection direction F2 outside the wafer 200 or within the supply buffer 222.
• the source gas injected along the first injection direction and the source gas injected along the second injection direction F2 collide at a position away from the wafer 200.
• source gas whose concentration is equalized by collision can be supplied to the wafer 200.
• the intersection FX is outside the supply buffer 222 and close to the wafer 200, the collision position of the raw material gases is too close to the wafer 200, so that the raw material gases with equal concentrations are supplied to the entire surface of the wafer 200. hard.
• the intersection FX is located outside the range of a distance within 3r from the center C2 of the outbound pipe and a distance within 3r from the center C2 of the return pipe, the distance between the collision position of the raw material gases and the wafer 200 is short. Become. As a result, it is difficult to supply source gas with an even concentration to the entire surface of the wafer 200.
• the supply buffer 222 is divided into three along the circumferential direction of the cylindrical portion by the third partition 18c and the fourth partition 18d.
• return nozzles 340 and 341 are provided as four gas nozzles 340a, 340b, 341a, and 341b in the central part 222b, and return nozzles 340 and 341 are provided in the parts on both sides of the central part for assist gas and reaction nozzles.
• Gas nozzles 342a and 342c for supplying gas are provided.
• the assist gas from the gas nozzle 342a and the like makes it easy to adjust the in-plane or inter-plane uniformity of the concentration of the raw material gas.
• the counter nozzle 343 that supplies the assist gas is connected between the second imaginary line L2 connecting the injection direction of the third injection device and the center C1 of the wafer 200 and the imaginary plane A in plan view.
• a counter nozzle 343 serving as a third injection device is provided at a position where the angle between them is an obtuse angle.
• the amount of assist gas N 2 used for each nozzle such as the gas nozzle 342a and the counter nozzle 343 can be reduced to about 1 slm.
• the amount of pure N 2 (ie, high-purity N 2 ) used in the entire substrate processing can be reduced by 10% to 20%.
• the central angle ⁇ of the sector formed by the virtual arc connecting both circumferential ends of the cylindrical portion of the supply buffer 222 and the center C1 of the wafer 200 is less than 30 degrees.
• the central angle ⁇ is 30 degrees or more, the circumferential width of the cylindrical portion of the supply buffer 222 increases, and as a result, the overall size of the supply buffer 222 increases. That is, in this embodiment, the circumferential width of the cylindrical portion of the supply buffer 222 can be made narrower than when the central angle ⁇ is 30 degrees or more. Therefore, the size of the entire supply buffer 222 can be reduced.
• the uniformity of the flow of the source gas on the surface of the wafer 200 can be improved.
• the uniformity of the flow of the raw material gas on the surface of the wafer 200 can be improved, so that the in-plane raw material gas adsorbed on the surface of the wafer 200 can be improved.
• a semiconductor device with improved uniformity and step coverage can be manufactured.
• relatively deep pinholes may be formed on the surface of the wafer 200, such as in three-dimensional NAND flash memories.
• the present embodiment which improves the uniformity of the flow of source gas, can be advantageously applied to film formation processing in the manufacturing process of semiconductor devices in which relatively deep holes are formed on the surface.
• a film is formed using a batch-type substrate processing apparatus that processes a plurality of substrates at once.
• the present disclosure is not limited to the above embodiments, and can be suitably applied, for example, to the case where a film is formed using a single-wafer type substrate processing apparatus that processes one or several substrates at a time. Can be done.
• the present disclosure may be configured by partially combining the configurations included in the plurality of embodiments, modifications, and aspects disclosed above.
• the processing procedure and processing conditions to be executed can be configured in the same manner as the processing procedure and processing conditions described in the aspect according to the present embodiment, for example.
• Substrate processing apparatus 200 Wafer (substrate) 203 Reaction tube (processing tube) 222 Supply buffer 236 Main exhaust slit (exhaust part) 238 Sub-exhaust slit (exhaust part) 340a Gas nozzle (first injection device) 340b Gas nozzle (first injection device) 341a Gas nozzle (first injection device) 341b Gas nozzle (first injection device) A virtual surface

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