WO2024001065A1 - Pixel circuit and display panel - Google Patents

Pixel circuit and display panel Download PDF

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Publication number
WO2024001065A1
WO2024001065A1 PCT/CN2022/138783 CN2022138783W WO2024001065A1 WO 2024001065 A1 WO2024001065 A1 WO 2024001065A1 CN 2022138783 W CN2022138783 W CN 2022138783W WO 2024001065 A1 WO2024001065 A1 WO 2024001065A1
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Prior art keywords
thin film
film transistor
unit
electrode
node
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PCT/CN2022/138783
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French (fr)
Chinese (zh)
Inventor
陈书志
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上海闻泰电子科技有限公司
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Publication of WO2024001065A1 publication Critical patent/WO2024001065A1/en

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0271Adjustment of the gradation levels within the range of the gradation scale, e.g. by redistribution or clipping

Definitions

  • the present disclosure relates to pixel circuits and display panels.
  • Micro LED display devices have attracted more and more attention due to their advantages such as low driving voltage, long life, and wide temperature resistance.
  • the Micro LED display is a current-type driven light-emitting display unit, which is different from the liquid crystal voltage-type drive.
  • Current-type control needs to control the passing current of the TFT to control the current passing by the Micro LED. Therefore, in the case of low gray scale, the voltage of data is relatively small and modulated within a minimum unit voltage range.
  • the brightness difference caused by the difference in current of the Micro LED is not obvious, causing some gray scales to be unable to be displayed and lost, and The lighting duration cannot be controlled.
  • a pixel circuit and a display panel are provided.
  • a pixel circuit the pixel circuit includes a driving unit, a light-emitting unit, a first writing unit, a second writing unit, a duration adjustment unit and a signal selection unit; the driving unit is used to drive the The light-emitting unit emits light; the first writing unit is used to write the first data voltage and the compensation voltage to the first node of the driving unit; the second writing unit is used to write the first data voltage and the compensation voltage to the duration adjustment unit The second data voltage is written to the first node of The output sweep signal, the second data voltage, the first power supply, the first data voltage and the compensation voltage control the duration of current flowing through the light-emitting unit.
  • the signal selection unit includes three signal selection circuits, each of the signal selection circuits includes a thin film transistor and a coupling capacitor, and the capacitance value of each coupling capacitor is are different; the first electrode of each thin film transistor is connected to the frequency sweep signal, the gate electrode of each thin film transistor is connected to a turn-on signal, and the second electrode of each thin film transistor is connected to a corresponding coupling capacitor.
  • One end of the coupling capacitor is connected to the second node of the duration adjustment unit; the other end of each coupling capacitor is connected to the third power supply.
  • the driving unit includes a first thin film transistor, a second thin film transistor, a third thin film transistor and a first capacitor; the first electrode of the first thin film transistor is connected to the first thin film transistor respectively.
  • the first power supply, the third node of the duration adjustment unit and one end of the first capacitor are connected, and the second pole of the first thin film transistor is respectively connected to the first node of the first writing unit and the first capacitor.
  • the first electrode of the second thin film transistor is connected; the second electrode of the second thin film transistor is respectively connected to the first electrode of the third thin film transistor and the second node of the first writing unit; the third The second electrode of the thin film transistor is connected to the light-emitting unit; the gate electrode of the first thin film transistor and the gate electrode of the third thin film transistor are connected to the first start signal, and the gate electrode of the second thin film transistor is respectively connected to The fourth node of the first writing unit, the third node of the duration adjustment unit and the other end of the first capacitor are connected.
  • the first writing unit includes a fourth thin film transistor and a fifth thin film transistor; the first electrode of the fourth thin film transistor is connected to the first data voltage, The second electrode of the fourth thin film transistor is connected to the second electrode of the first thin film transistor and the first electrode of the second thin film transistor respectively; the first electrode of the fifth thin film transistor is connected to the first electrode of the fifth thin film transistor respectively.
  • the second electrode of the two thin film transistors is connected to the first electrode of the third thin film transistor, and the second electrode of the fifth thin film transistor is respectively connected to the gate electrode of the second thin film transistor and the fourth electrode of the duration adjustment unit.
  • the node is connected to the other end of the first capacitor; the gate electrode of the fourth thin film transistor and the gate electrode of the fifth thin film transistor are respectively connected to the second start signal.
  • the second writing unit includes a sixth thin film transistor; the first electrode of the sixth thin film transistor is connected to the second data voltage, and the sixth thin film transistor The second electrode of the transistor is connected to the first node of the duration adjustment unit; the gate electrode of the sixth thin film transistor is connected to the second start signal.
  • the duration adjustment unit includes a seventh thin film transistor, an eighth thin film transistor, and a second capacitor; the first pole of the seventh thin film transistor is connected to the first power supply respectively. , the first electrode of the first thin film transistor is connected to one end of the first capacitor, the second electrode of the seventh thin film transistor is respectively connected to the first electrode of the eighth thin film transistor; the eighth thin film transistor The second electrode of the transistor is respectively connected to the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor and the other end of the first capacitor; the gate electrode of the seventh thin film transistor is respectively connected to the gate electrode of the seventh thin film transistor.
  • the second electrodes of the six thin film transistors are connected to one end of the second capacitor, and the gate electrode of the eighth thin film transistor is connected to the control signal; the other end of the second capacitor is connected to each coupling in the signal selection unit. One end of the capacitor is connected.
  • the circuit further includes a reset unit; the reset unit is used to adjust the voltage of the first node of the driving unit and the first node of the duration adjustment unit. to the reference voltage.
  • the reset unit includes a ninth thin film transistor, a tenth thin film transistor, and an eleventh thin film transistor; the first electrode of the ninth thin film transistor is connected to the input of the light-emitting unit respectively. terminal is connected to the second terminal of the third thin film transistor, and the second terminal of the ninth thin film transistor is respectively connected to the reference voltage, the first terminal of the tenth thin film transistor, and the first terminal of the eleventh thin film transistor.
  • the first electrode is connected; the second electrode of the tenth thin film transistor is respectively connected to the second electrode of the eighth thin film transistor, the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor, and the second electrode of the tenth thin film transistor.
  • the other end of the first capacitor is connected; the second electrode of the eleventh thin film transistor is respectively connected to the gate electrode of the seventh thin film transistor, the second electrode of the sixth thin film transistor and one end of the second capacitor;
  • the gate electrode of the ninth thin film transistor, the gate electrode of the tenth thin film transistor, and the gate electrode of the eleventh thin film transistor are respectively connected to the third start signal.
  • the capacitance value of the coupling capacitor in the signal selection circuit selected by the signal selection unit is positively correlated with the time period during which the duration adjustment unit controls the current to flow through the light-emitting unit.
  • the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the At least one of the sixth thin film transistor, the seventh thin film transistor, the eighth thin film transistor, the ninth thin film transistor, the tenth thin film transistor, and the eleventh thin film transistor is a P-type transistor.
  • a display panel includes a plurality of pixel circuits, and the pixel circuits are any pixel circuits disclosed in this disclosure.
  • the display panel includes a display area and an edge area located at the periphery of the display area, and the driving unit, the light-emitting unit, the first writing unit, and the second writing unit , duration adjustment units are located in the display area, and the signal selection unit is arranged in the edge area.
  • the edge area includes a wiring area and a blank area
  • the signal selection unit is arranged in the blank area.
  • the pixel circuit further includes a reset unit, the reset unit is used to adjust the voltage of the first node of the driving unit and the first node of the duration adjustment unit. to the reference voltage, and the reset unit is disposed in the display area.
  • the display panel is a micro-light-emitting diode display panel or an organic light-emitting diode display panel.
  • Figure 1 is a schematic structural diagram of a pixel circuit provided by one or more embodiments of the present disclosure
  • Figure 2 is a driving timing diagram of a pixel circuit provided by one or more embodiments of the present disclosure
  • FIG. 3 is a schematic diagram of voltage and current changes over time of a pixel circuit provided by one or more embodiments of the present disclosure
  • Figure 4 is a schematic structural diagram of a display panel provided by one or more embodiments of the present disclosure.
  • the reference numbers are: 10. Driving unit; 20. Light-emitting unit; 30. First writing unit; 40. Second writing unit; 50. Duration adjustment unit; 60. Signal selection unit; 70. Reset unit; T1, first thin film transistor; T2, second thin film transistor; T3, third thin film transistor; T4, fourth thin film transistor; T5, fifth thin film transistor; T6, sixth thin film transistor; T7, seventh thin film transistor; T8 , eighth thin film transistor; T9, ninth thin film transistor; T10, tenth thin film transistor; T11, eleventh thin film transistor; EM, first start signal; G(n), second start signal; G(n-1 ), the third start signal; Control, control signal; Data1, first data voltage; Data2, second data voltage; C1, first capacitor; C2, second capacitor; Ca, coupling capacitor; Cb, coupling capacitor; Cc, Coupling capacitor; S1, turn-on signal; S2, turn-on signal; S3, turn-on signal; Sweep, frequency sweep signal; VDD, first power supply; VSS, third power supply
  • first, second, etc. in the description and claims of the present disclosure are used to distinguish different objects, rather than to describe a specific order of objects.
  • first camera and the second camera are used to distinguish different cameras, rather than to describe a specific order of the cameras.
  • words such as “exemplary” or “for example” mean examples, illustrations or explanations. Any embodiment or design described as “exemplary” or “such as” in the present disclosure is not intended to be construed as preferred or advantageous over other embodiments or designs. To be precise, the use of words such as “exemplary” or “such as” is intended to present relevant concepts in a specific manner. In addition, in the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "plurality" refers to both one or more than two.
  • Embodiments of the present disclosure disclose a pixel circuit and a display panel that can select different driving methods to improve gray scale loss or poor display in low gray scale situations, and can control the lighting duration. Each is explained in detail below.
  • Figure 1 is a schematic structural diagram of a pixel circuit disclosed in an embodiment of the present disclosure.
  • the pixel circuit provided by the embodiment of the present disclosure can be used in a display panel to emit display light.
  • the pixel circuit may include: a driving unit 10 , a light emitting unit 20 , a first writing unit 30 , a second writing unit 40 , a duration adjustment unit 50 and a signal selection unit 60 .
  • the driving unit 10 is used to drive the light-emitting unit 20 to emit light according to the first power supply;
  • the first writing unit 30 is used to write the first data voltage and the compensation voltage to the first node of the driving unit 10;
  • the second writing unit 40 is used to write the second data voltage to the first node of the duration adjustment unit 50;
  • the signal selection unit 60 is used to select different signal selection circuits to output frequency sweep signals
  • the duration adjustment unit 50 is used to control the duration of the current flowing through the light-emitting unit 20 according to the frequency sweep signal output by the signal selection circuit selected by the signal selection unit 60, the second data voltage, the first power supply, the first data voltage and the compensation voltage. .
  • the light-emitting unit 20 may be a current-driven light-emitting device including Micro LED (Micro Light Emitting Diode) in the prior art.
  • Micro LED Micro Light Emitting Diode
  • Micro LED is used as an example. Be explained.
  • the first writing unit 30 writes the first data voltage and the compensation voltage to the Q node in the circuit, where the compensation voltage is the internal compensation voltage generated when the gate and drain of the thin film transistor are connected; the second The writing unit 40 writes the second data voltage to the g node in the circuit, so that the driving unit 10 is turned on and outputs current to the light-emitting unit 20 to cause it to emit light. Then, after the signal selection unit 60 selects different signal selection circuits and outputs the frequency sweep signal, the frequency sweep signal is coupled with the second data voltage so that the duration adjustment unit 50 is turned on.
  • the signal selection unit 60 selects different signal selection circuits to output frequency sweep signals to control the conduction speed of the duration adjustment unit 50, thereby controlling the lighting duration of the light-emitting unit 20.
  • the signal selection unit 60 may include three signal selection circuits.
  • Each signal selection circuit includes a thin film transistor and a coupling capacitor, and the capacitance values of each coupling capacitor are different;
  • the first electrode of each thin film transistor is respectively connected to the frequency sweep signal, the gate electrode of each thin film transistor is respectively connected to a turn-on signal, and the second electrode of each thin film transistor is respectively connected to one end of the corresponding coupling capacitor and the second node of the duration adjustment unit 50 connect;
  • each coupling capacitor is connected to the third power supply.
  • the driving unit 10 includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3 and a first capacitor C1; the first pole of the first thin film transistor T1 is connected to the first power supply and the third node of the duration adjustment unit 50 respectively.
  • the second pole of the first thin film transistor T1 is connected to the first node of the first writing unit 30 and the first pole of the second thin film transistor T2 respectively; the second pole of the second thin film transistor T2 are respectively connected to the first electrode of the third thin film transistor T3 and the second node of the first writing unit 30; the second electrode of the third thin film transistor T3 is connected to the light emitting unit 20; the gate electrode of the first thin film transistor T1 and the third The gate of the thin film transistor T3 is connected to the first start signal, and the gate of the second thin film transistor T2 is connected to the fourth node of the first writing unit 30, the third node of the duration adjustment unit 50, and the other end of the first capacitor respectively.
  • the first writing unit 30 includes a fourth thin film transistor T4 and a fifth thin film transistor T5; the first electrode of the fourth thin film transistor T4 is connected to the first data voltage, and the second electrode of the fourth thin film transistor T4 is connected to the first thin film transistor respectively.
  • the second electrode of T1 is connected to the first electrode of the second thin film transistor T2; the first electrode of the fifth thin film transistor T5 is connected to the second electrode of the second thin film transistor T2 and the first electrode of the third thin film transistor T3 respectively.
  • the second electrode of the fifth thin film transistor T5 is respectively connected to the gate electrode of the second thin film transistor T2, the fourth node of the duration adjustment unit 50 and the other end of the first capacitor; the gate electrode of the fourth thin film transistor T4 and the fifth thin film transistor T5 The gates of are respectively connected with the second start signal.
  • the second writing unit 40 includes a sixth thin film transistor T6; the first electrode of the sixth thin film transistor T6 is connected to the second data voltage, and the second electrode of the sixth thin film transistor T6 is connected to the first node of the duration adjustment unit 50; The gate electrode of the six thin film transistors T6 is connected to the second start signal.
  • the duration adjustment unit 50 includes a seventh thin film transistor T7, an eighth thin film transistor T8, and a second capacitor; the first electrode of the seventh thin film transistor T7 is connected to the first power supply, the first electrode of the first thin film transistor T1, and the first capacitor respectively. One end is connected, the second pole of the seventh thin film transistor T7 is connected to the first pole of the eighth thin film transistor T8 respectively; the second pole of the eighth thin film transistor T8 is respectively connected to the second pole of the fifth thin film transistor T5 and the second thin film transistor T5.
  • the gate electrode of T2 is connected to the other end of the first capacitor; the gate electrode of the seventh thin film transistor T7 is connected to the second electrode of the sixth thin film transistor T6 and one end of the second capacitor respectively, and the gate electrode of the eighth thin film transistor T8 is connected to the control signal connection; the other end of the second capacitor is connected to one end of each coupling capacitor in the signal selection unit 60 .
  • the pixel circuit further includes a reset unit 70;
  • the reset unit 70 is used to adjust the voltages of the first node of the driving unit 10 and the first node of the duration adjustment unit 50 to the reference voltage.
  • the reset unit 70 includes a ninth thin film transistor T9 , a tenth thin film transistor T10 and an eleventh thin film transistor T11 ; the first electrode of the ninth thin film transistor T9 is connected to the input end of the light emitting unit 20 and the second electrode of the third thin film transistor T3 respectively. connection, the second pole of the ninth thin film transistor T9 is respectively connected to the reference voltage, the first pole of the tenth thin film transistor T10 and the first pole of the eleventh thin film transistor T11; the second pole of the tenth thin film transistor T10 is respectively connected to the first pole of the tenth thin film transistor T10.
  • the second electrode of the eighth thin film transistor T8, the second electrode of the fifth thin film transistor T5, the gate electrode of the second thin film transistor T2 and the other end of the first capacitor are connected; the second electrode of the eleventh thin film transistor T11 is connected to the seventh thin film transistor T11 respectively.
  • the gate electrode of the thin film transistor T7, the second electrode of the sixth thin film transistor T6 and one end of the second capacitor are connected; the gate electrode of the ninth thin film transistor T9, the gate electrode of the tenth thin film transistor T10 and the gate of the eleventh thin film transistor T11
  • the poles are respectively connected to the third start signal.
  • all thin film transistors are P-type transistors, but in other embodiments, they are not limited to the above-mentioned P-type transistors or P-type transistors.
  • P-type accumulation mode transistors when the applied V GS is a positive voltage, the device operates in a depletion mode, and the carriers in the conductive channel are depleted, resulting in a high channel resistance. At this time The device is in the off state; when the applied V GS is a negative voltage, the device operates in an accumulation mode, and a large number of carriers are accumulated at the interface between the semiconductor layer and the insulating layer, forming a low-resistance conductive channel. At this time, the device is on.
  • FIG. 2 is a timing diagram disclosed in an embodiment. Based on the pixel circuit in FIG. 1 and the timing in FIG. 2 , the process of realizing the lighting duration control of the light-emitting unit 20 includes:
  • the second start signal G(n) inputs a low level.
  • the fourth thin film transistor T4, the fifth thin film transistor T5, and the sixth thin film transistor T6 are turned on.
  • the first electrode and the second electrode of T5 are connected to the gate electrode and the second electrode of the second thin film transistor T2 respectively, thus causing the second thin film transistor T2 to be slightly turned on, so that the first data voltage passes through the fourth thin film transistor T4 and the second thin film transistor T2 in sequence.
  • the thin film transistor T2 and the fifth thin film transistor T5 are written to the Q node in the circuit, and because the first electrode and the second electrode of the fifth thin film transistor T5 are respectively connected to the gate electrode and the second electrode of the second thin film transistor T2, Internal circuit compensation occurs, so the internal circuit compensated voltage V th is stored to the Q node in the circuit together with the first data voltage.
  • the sixth thin film transistor T6 is turned on, the second data voltage passes through the sixth thin film transistor T6 and is written to the g node in the circuit.
  • I ds is the source-drain current of the second thin film transistor T2
  • V ds is the source-drain voltage of the second thin film transistor T2
  • k is the offset voltage temperature coefficient
  • V GS is the gate-source voltage of the second thin film transistor T2
  • the second start-up signal G(n) and the third start-up signal G(n-1) input a high level
  • the first start-up signal EM inputs a low level. Therefore, the fourth thin film transistor T4 and the fifth thin film transistor T4
  • the transistor T5 and the sixth thin film transistor T6 are turned off, and the first thin film transistor T1 and the third thin film transistor T3 are turned on. Since the first data voltage and the compensation voltage are written to the node Q in the circuit during the writing and compensation phase t1, the third thin film transistor T3 is turned on during the light emitting phase t2.
  • the first power supply is input to the Micro LED through the first thin film transistor T1, the second thin film transistor T2 and the third thin film transistor T3, so that the Micro LED emits light.
  • the Sweep voltage output by the signal selection unit 60 decreases linearly from a high level, and is pulled down to a low level while the Micro LED continues to emit light. At this time, the Sweep voltage is consistent with the second data voltage written at the g point. Capacitive coupling is formed through the second capacitor, and the capacitive coupling couples the g-point voltage toward a low level over time. Since the control signal is low level in the light-emitting phase t2, the eighth thin film transistor T8 is turned on, and the duration adjustment unit 50 is connected to the driving unit 10.
  • the seventh thin film transistor T7 is turned on, and the Q-point voltage is instantly passed by the first power supply.
  • the seventh thin film transistor T7 is pulled up from the sum of the voltage value of the first data voltage and the compensation voltage to the voltage value of the first power supply.
  • the second thin film transistor T2 will turn off because the Q point voltage is pulled high, and the Micro LED will stop emitting light because the second thin film transistor T2 is turned off and no current flows through it.
  • the seventh thin film transistor T7 is turned on due to the coupling between the Sweep voltage and the second data voltage, so that the duration adjustment unit 50 is connected to the driving unit 10, thereby making The first power supply is coupled with the first data voltage and the compensation voltage to turn off the second thin film transistor T2. Therefore, the time during which the duration adjustment unit 50 is connected to the driving unit 10 can be controlled by controlling the capacitive coupling speed of the Sweep voltage and the second data voltage, thereby controlling the lighting duration of the light-emitting unit 20 .
  • the process of controlling the lighting duration of the light-emitting unit 20 also includes:
  • the third start signal G(n-1) inputs a low level, and the ninth thin film transistor T9, the tenth thin film transistor T10, and the eleventh thin film transistor T11 are turned on.
  • the reference voltage passes through the ninth thin film transistor respectively.
  • the transistor T9, the tenth thin film transistor T10, and the eleventh thin film transistor T11 pull the voltage of the Q node, the voltage of the g node, and the voltage of the Micro LED input terminal in the circuit to the value of the reference voltage. This allows the key nodes in the circuit to return to the same voltage reference point at the beginning of each frame before starting data writing, ensuring that the voltage status of important nodes is consistent before each data writing.
  • FIG. 3 is a schematic diagram of changes in voltage and current over time disclosed in an embodiment.
  • the capacitance value of the capacitor Cc in the signal selection unit 60 is greater than the capacitance value of the capacitor Cb, and the capacitance value of the capacitor Cb is greater than the capacitance value of the capacitor Ca. 3 shows that when the coupling capacitors in the signal selection circuit selected by the signal selection unit 60 are capacitor Ca, capacitor Cb and capacitor Cc, the voltage at point g in the circuit is capacitively coupled with the Sweep signal to achieve the seventh Time variation diagram of the turn-on voltage of thin film transistor T7.
  • FIG. 3 is a schematic diagram of changes in voltage and current over time disclosed in an embodiment.
  • the capacitance value of the capacitor Cc in the signal selection unit 60 is greater than the capacitance value of the capacitor Cb
  • the capacitance value of the capacitor Cb is greater than the capacitance value of the capacitor Ca. 3 shows that when the coupling capacitors in the signal selection circuit selected by the signal selection unit 60 are capacitor Ca
  • FIG. 3 also shows the time variation diagram of the current flowing through the light-emitting unit 20 when the coupling capacitors in the signal selection circuit selected by the signal selection unit 60 are capacitance Ca, capacitance Cb and capacitance Cc respectively. Therefore, combined with FIG. 3 and the relationship between the capacitance values of the capacitance Ca, the capacitance Cb and the capacitance Cc, it can be known that when the coupling capacitance in the signal selection circuit selected by the signal selection unit 60 is larger, the voltage at point g is capacitively coupled to The longer the low level is to turn on the seventh thin film transistor T7, the longer the current can flow to the light-emitting unit 20, that is, the longer the light-emitting time of the light-emitting unit 20 is. Therefore, the signal selected by the signal selection unit 60 The capacitance value of the coupling capacitor in the selection circuit is positively correlated with the time period during which the duration adjustment unit 50 controls the current to flow through the light-emitting unit 20 .
  • the signal selection unit 60 includes three signal selection circuits.
  • the first signal selection circuit includes a thin film transistor and a coupling capacitor Ca. This thin film transistor is controlled by a turn-on signal. S1 controls on or off;
  • the second signal selection circuit includes a thin film transistor and coupling capacitor Cb, which is controlled on or off by the turn-on signal S2;
  • the third signal selection circuit includes a thin film transistor and coupling capacitor Cc, this thin film transistor is turned on or off controlled by the turn-on signal S3. Wherein, when the turn-on signal is low level, the corresponding thin film transistor is turned on.
  • the coupling capacitance of the appropriate signal selection circuit can be better selected through each turn-on signal, thereby effectively controlling the lighting duration of the light-emitting unit 20. ground control.
  • a display panel including a plurality of pixel circuits, and the pixel circuits are the pixel circuits described in any of the above embodiments.
  • the display panel can be a Micro-LED display panel or an Organic Light-emitting Diode (OLED) display panel, and can be applied to electronic paper, mobile phones, tablets, televisions, monitors, and notebook computers. , digital photo frames, navigators and other products with display functions.
  • OLED Organic Light-emitting Diode
  • FIG. 4 is a schematic structural diagram of a display panel disclosed in one embodiment.
  • the display panel 400 includes a display area 410 and an edge area located at the periphery of the display area.
  • the driving unit, the light-emitting unit, the first writing unit, the second writing unit, and the duration adjustment unit are all located in the display area 410.
  • the signal selection unit is disposed in the edge area. .
  • the reset unit is also located in the display area 410.
  • the reset unit is located in the display area, which can better combine the reset stage with the writing and compensation stages and the light-emitting stage.
  • the edge area includes a wiring area 420 and a blank area 430, and the signal selection unit is disposed in the blank area 430.
  • each signal selection unit on the blank area corresponds to a pixel circuit.
  • the units described above as separate components may or may not be physically separated.
  • the components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of this embodiment.
  • each functional unit in each embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.
  • the above integrated units can be implemented in the form of hardware or software functional units.
  • the pixel circuit provided by the present disclosure includes a driving unit, a light emitting unit, a first writing unit, a second writing unit, a duration adjustment unit and a signal selection unit.
  • the driving unit is used to drive the light-emitting unit to emit light according to the first power supply;
  • the first writing unit is used to write the first data voltage and the compensation voltage to the first node of the driving unit;
  • the second writing unit Used to write the second data voltage to the first node of the duration adjustment unit;
  • the signal selection unit is used to select different signal selection circuits to output sweep signals;
  • the duration adjustment unit is used to select the circuit according to the signal selected by the signal selection unit
  • the output sweep signal, the second data voltage, the first power supply, the first data voltage and the compensation voltage control the duration of current flowing through the light-emitting unit.
  • Different driving methods can be selected to improve gray scale loss or poor display in low gray scale situations, and the lighting duration can be controlled, which has strong industrial applicability.

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Abstract

Embodiments of the present disclosure provide a pixel circuit and a display panel. The pixel circuit comprises a driving unit, a light emitting unit, a first writing unit, a second writing unit, a duration adjusting unit, and a signal selecting unit; the driving unit is configured to drive, according to a first power supply, the light emitting unit to emit light; the first writing unit is configured to write a first data voltage and a compensation voltage to a first node of the driving unit; the second writing unit is configured to write a second data voltage to a first node of the duration adjusting unit; the signal selecting unit is configured to select different signal selecting circuits to output frequency sweep signals; and the duration adjusting unit is configured to control, according to the frequency sweep signals outputted by the signal selecting circuits selected by the signal selecting unit, the second data voltage, the first power supply, the first data voltage, and the compensation voltage, a duration of a current flowing through the light emitting unit. By implementing the embodiments of the present disclosure, the light emitting duration can be controlled.

Description

像素电路及显示面板Pixel circuit and display panel
相关交叉引用Related cross-references
本公开要求于2022年6月30日提交中国专利局、申请号为2022107725340、发明名称为“像素电路及显示面板”的中国专利申请的优先权,其全部内容通过引用结合在本公开中。This disclosure claims priority to the Chinese patent application filed with the China Patent Office on June 30, 2022, with application number 2022107725340 and the invention name "pixel circuit and display panel", the entire content of which is incorporated into this disclosure by reference.
技术领域Technical field
本公开涉及像素电路及显示面板。The present disclosure relates to pixel circuits and display panels.
背景技术Background technique
Micro LED显示装置由于具有驱动电压低、寿命长、耐宽温等优点,因此受到越来越多的关注。而Micro LED显示器是电流型驱动的发光显示单元,与液晶电压型驱动相比较是不同的,电流型控制需要控制TFT的通过电流来控制Micro LED通过的电流。因此在低灰阶情形下,data的电压是比较小的,在一个最小单位电压范围内调变,Micro LED因电流差异导致的亮度差异并不明显导致某些灰阶是无法显示而丢失,并且发光时长无法控制。Micro LED display devices have attracted more and more attention due to their advantages such as low driving voltage, long life, and wide temperature resistance. The Micro LED display is a current-type driven light-emitting display unit, which is different from the liquid crystal voltage-type drive. Current-type control needs to control the passing current of the TFT to control the current passing by the Micro LED. Therefore, in the case of low gray scale, the voltage of data is relatively small and modulated within a minimum unit voltage range. The brightness difference caused by the difference in current of the Micro LED is not obvious, causing some gray scales to be unable to be displayed and lost, and The lighting duration cannot be controlled.
发明内容Contents of the invention
(一)要解决的技术问题(1) Technical problems to be solved
在现有技术中,Micro LED因电流差异导致的亮度差异并不明显,导致Micro LED存在某些灰阶无法显示而丢失的现象,并且存在发光时长无法控制的问题。In the existing technology, the brightness difference of Micro LED due to the difference in current is not obvious, resulting in the phenomenon that some grayscales of Micro LED cannot be displayed and are lost, and there is a problem that the lighting time cannot be controlled.
(二)技术方案(2) Technical solutions
根据本公开公开的各种实施例,提供了一种像素电路及显示面板。According to various embodiments of the present disclosure, a pixel circuit and a display panel are provided.
一种像素电路,所述像素电路包括驱动单元、发光单元、第一写入单元、第二写入单元、时长调节单元以及信号选择单元;所述驱动 单元,用于根据第一电源驱动所述发光单元进行发光;所述第一写入单元,用于向所述驱动单元的第一节点写入第一数据电压以及补偿电压;所述第二写入单元,用于向所述时长调节单元的第一节点写入第二数据电压;所述信号选择单元,用于选取不同的信号选择电路输出扫频信号;所述时长调节单元,用于根据所述信号选择单元所选取的信号选择电路输出的扫频信号、所述第二数据电压、所述第一电源、所述第一数据电压以及补偿电压,控制电流流过所述发光单元的时长。A pixel circuit, the pixel circuit includes a driving unit, a light-emitting unit, a first writing unit, a second writing unit, a duration adjustment unit and a signal selection unit; the driving unit is used to drive the The light-emitting unit emits light; the first writing unit is used to write the first data voltage and the compensation voltage to the first node of the driving unit; the second writing unit is used to write the first data voltage and the compensation voltage to the duration adjustment unit The second data voltage is written to the first node of The output sweep signal, the second data voltage, the first power supply, the first data voltage and the compensation voltage control the duration of current flowing through the light-emitting unit.
作为本公开实施例一种可选的实施方式,所述信号选择单元包括三个所述信号选择电路,各个所述信号选择电路包括一个薄膜晶体管以及一个耦合电容,各个所述耦合电容的电容值均不同;各个所述薄膜晶体管的第一极分别与所述扫频信号连接,各个所述薄膜晶体管的栅极分别连接一个开启信号,各个所述薄膜晶体管的第二极分别与对应的耦合电容的一端以及所述时长调节单元的第二节点连接;各个所述耦合电容的另一端与所述第三电源连接。As an optional implementation manner of the embodiment of the present disclosure, the signal selection unit includes three signal selection circuits, each of the signal selection circuits includes a thin film transistor and a coupling capacitor, and the capacitance value of each coupling capacitor is are different; the first electrode of each thin film transistor is connected to the frequency sweep signal, the gate electrode of each thin film transistor is connected to a turn-on signal, and the second electrode of each thin film transistor is connected to a corresponding coupling capacitor. One end of the coupling capacitor is connected to the second node of the duration adjustment unit; the other end of each coupling capacitor is connected to the third power supply.
作为本公开实施例一种可选的实施方式,所述驱动单元包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第一电容;所述第一薄膜晶体管的第一极分别与所述第一电源、所述时长调节单元的第三节点以及所述第一电容的一端连接,所述第一薄膜晶体管的第二极分别与所述第一写入单元的第一节点以及所述第二薄膜晶体管的第一极连接;所述第二薄膜晶体管的第二极分别与所述第三薄膜晶体管的第一极以及所述第一写入单元的第二节点连接;所述第三薄膜晶体管的第二极与所述发光单元连接;所述第一薄膜晶体管的栅极以及所述第三薄膜晶体管的栅极与第一启动信号连接,所述第二薄膜晶体管的栅极分别与所述第一写入单元的第四节点、所述时长调节单元的第三节点以及所述第一电容的另一端连接。As an optional implementation of the embodiment of the present disclosure, the driving unit includes a first thin film transistor, a second thin film transistor, a third thin film transistor and a first capacitor; the first electrode of the first thin film transistor is connected to the first thin film transistor respectively. The first power supply, the third node of the duration adjustment unit and one end of the first capacitor are connected, and the second pole of the first thin film transistor is respectively connected to the first node of the first writing unit and the first capacitor. The first electrode of the second thin film transistor is connected; the second electrode of the second thin film transistor is respectively connected to the first electrode of the third thin film transistor and the second node of the first writing unit; the third The second electrode of the thin film transistor is connected to the light-emitting unit; the gate electrode of the first thin film transistor and the gate electrode of the third thin film transistor are connected to the first start signal, and the gate electrode of the second thin film transistor is respectively connected to The fourth node of the first writing unit, the third node of the duration adjustment unit and the other end of the first capacitor are connected.
作为本公开实施例一种可选的实施方式,所述第一写入单元包括第四薄膜晶体管和第五薄膜晶体管;所述第四薄膜晶体管的第一极与所述第一数据电压连接,所述第四薄膜晶体管的第二极分别与所述第一薄膜晶体管的第二极以及所述第二薄膜晶体管的第一极连接;所述第五薄膜晶体管的第一极分别与所述第二薄膜晶体管的第二极以及所 述第三薄膜晶体管的第一极连接,所述第五薄膜晶体管的第二极分别与所述第二薄膜晶体管的栅极、所述时长调节单元的第四节点以及所述第一电容的另一端连接;所述第四薄膜晶体管的栅极和所述第五薄膜晶体管的栅极分别与第二启动信号连接。As an optional implementation manner of the embodiment of the present disclosure, the first writing unit includes a fourth thin film transistor and a fifth thin film transistor; the first electrode of the fourth thin film transistor is connected to the first data voltage, The second electrode of the fourth thin film transistor is connected to the second electrode of the first thin film transistor and the first electrode of the second thin film transistor respectively; the first electrode of the fifth thin film transistor is connected to the first electrode of the fifth thin film transistor respectively. The second electrode of the two thin film transistors is connected to the first electrode of the third thin film transistor, and the second electrode of the fifth thin film transistor is respectively connected to the gate electrode of the second thin film transistor and the fourth electrode of the duration adjustment unit. The node is connected to the other end of the first capacitor; the gate electrode of the fourth thin film transistor and the gate electrode of the fifth thin film transistor are respectively connected to the second start signal.
作为本公开实施例一种可选的实施方式,所述第二写入单元包括第六薄膜晶体管;所述第六薄膜晶体管的第一极与所述第二数据电压连接,所述第六薄膜晶体管的第二极与所述时长调节单元的第一节点连接;所述第六薄膜晶体管的栅极与所述第二启动信号连接。As an optional implementation manner of the embodiment of the present disclosure, the second writing unit includes a sixth thin film transistor; the first electrode of the sixth thin film transistor is connected to the second data voltage, and the sixth thin film transistor The second electrode of the transistor is connected to the first node of the duration adjustment unit; the gate electrode of the sixth thin film transistor is connected to the second start signal.
作为本公开实施例一种可选的实施方式,所述时长调节单元包括第七薄膜晶体管、第八薄膜晶体管以及第二电容;所述第七薄膜晶体管的第一极分别与所述第一电源、所述第一薄膜晶体管的第一极以及所述第一电容的一端连接,所述第七薄膜晶体管的第二极分别与所述第八薄膜晶体管的第一极连接;所述第八薄膜晶体管的第二极分别与所述第五薄膜晶体管的第二极、所述第二薄膜晶体管的栅极以及所述第一电容的另一端连接;所述第七薄膜晶体管的栅极分别与第六薄膜晶体管的第二极以及所述第二电容的一端连接,所述第八薄膜晶体管的栅极与控制信号连接;所述第二电容的另一端与所述信号选择单元中各个所述耦合电容的一端连接。As an optional implementation of the embodiment of the present disclosure, the duration adjustment unit includes a seventh thin film transistor, an eighth thin film transistor, and a second capacitor; the first pole of the seventh thin film transistor is connected to the first power supply respectively. , the first electrode of the first thin film transistor is connected to one end of the first capacitor, the second electrode of the seventh thin film transistor is respectively connected to the first electrode of the eighth thin film transistor; the eighth thin film transistor The second electrode of the transistor is respectively connected to the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor and the other end of the first capacitor; the gate electrode of the seventh thin film transistor is respectively connected to the gate electrode of the seventh thin film transistor. The second electrodes of the six thin film transistors are connected to one end of the second capacitor, and the gate electrode of the eighth thin film transistor is connected to the control signal; the other end of the second capacitor is connected to each coupling in the signal selection unit. One end of the capacitor is connected.
作为本公开实施例一种可选的实施方式,所述电路还包括复位单元;所述复位单元,用于将所述驱动单元的第一节点以及所述时长调节单元的第一节点的电压调节至参考电压。As an optional implementation of the embodiment of the present disclosure, the circuit further includes a reset unit; the reset unit is used to adjust the voltage of the first node of the driving unit and the first node of the duration adjustment unit. to the reference voltage.
作为本公开实施例一种可选的实施方式,所述复位单元包括第九薄膜晶体管、第十薄膜晶体管以及第十一薄膜晶体管;第九薄膜晶体管的第一极分别与所述发光单元的输入端以及所述第三薄膜晶体管的第二极连接,所述第九薄膜晶体管的第二极分别与所述参考电压、所述第十薄膜晶体管的第一极以及所述第十一薄膜晶体管的第一极连接;所述第十薄膜晶体管的第二极分别与所述第八薄膜晶体管的第二极、所述第五薄膜晶体管的第二极、所述第二薄膜晶体管的栅极以及所述第一电容的另一端连接;所述第十一薄膜晶体管的第二极分别与所述第七薄膜晶体管的栅极、第六薄膜晶体管的第二极以及所述第二电容 的一端连接;所述第九薄膜晶体管的栅极、所述第十薄膜晶体管的栅极以及所述第十一薄膜晶体管的栅极分别与第三启动信号连接。As an optional implementation manner of the embodiment of the present disclosure, the reset unit includes a ninth thin film transistor, a tenth thin film transistor, and an eleventh thin film transistor; the first electrode of the ninth thin film transistor is connected to the input of the light-emitting unit respectively. terminal is connected to the second terminal of the third thin film transistor, and the second terminal of the ninth thin film transistor is respectively connected to the reference voltage, the first terminal of the tenth thin film transistor, and the first terminal of the eleventh thin film transistor. The first electrode is connected; the second electrode of the tenth thin film transistor is respectively connected to the second electrode of the eighth thin film transistor, the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor, and the second electrode of the tenth thin film transistor. The other end of the first capacitor is connected; the second electrode of the eleventh thin film transistor is respectively connected to the gate electrode of the seventh thin film transistor, the second electrode of the sixth thin film transistor and one end of the second capacitor; The gate electrode of the ninth thin film transistor, the gate electrode of the tenth thin film transistor, and the gate electrode of the eleventh thin film transistor are respectively connected to the third start signal.
作为本公开实施例一种可选的实施方式,所述信号选择单元选取的信号选择电路中的耦合电容的电容值,与所述时长调节单元控制电流流过所述发光单元的时长成正相关关系。As an optional implementation manner of the embodiment of the present disclosure, the capacitance value of the coupling capacitor in the signal selection circuit selected by the signal selection unit is positively correlated with the time period during which the duration adjustment unit controls the current to flow through the light-emitting unit. .
作为本公开实施例一种可选的实施方式,所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管、所述第七薄膜晶体管、所述第八薄膜晶体管、所述第九薄膜晶体管、所述第十薄膜晶体管、所述第十一薄膜晶体管中的至少一个为P型晶体管。As an optional implementation manner of the embodiment of the present disclosure, the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the At least one of the sixth thin film transistor, the seventh thin film transistor, the eighth thin film transistor, the ninth thin film transistor, the tenth thin film transistor, and the eleventh thin film transistor is a P-type transistor.
一种显示面板,包括多个像素电路,所述像素电路为本公开公开的任意一种像素电路。A display panel includes a plurality of pixel circuits, and the pixel circuits are any pixel circuits disclosed in this disclosure.
作为本公开实施例一种可选的实施方式,所述显示面板包括显示区域和位于所述显示区域外围的边缘区域,所述驱动单元、发光单元、第一写入单元、第二写入单元、时长调节单元均位于所述显示区域,所述信号选择单元设置在所述边缘区域。As an optional implementation of the embodiment of the present disclosure, the display panel includes a display area and an edge area located at the periphery of the display area, and the driving unit, the light-emitting unit, the first writing unit, and the second writing unit , duration adjustment units are located in the display area, and the signal selection unit is arranged in the edge area.
作为本公开实施例一种可选的实施方式,所述边缘区域包括走线区域和空白区域;As an optional implementation of the embodiment of the present disclosure, the edge area includes a wiring area and a blank area;
所述信号选择单元设置在所述空白区域。The signal selection unit is arranged in the blank area.
作为本公开实施例一种可选的实施方式,所述像素电路还包括复位单元,所述复位单元用于将所述驱动单元的第一节点以及所述时长调节单元的第一节点的电压调节至参考电压,所述复位单元设置在所述显示区域。As an optional implementation manner of the embodiment of the present disclosure, the pixel circuit further includes a reset unit, the reset unit is used to adjust the voltage of the first node of the driving unit and the first node of the duration adjustment unit. to the reference voltage, and the reset unit is disposed in the display area.
作为本公开实施例一种可选的实施方式,所述显示面板为微发光二极管显示面板或有机发光二极管显示面板。As an optional implementation manner of the embodiment of the present disclosure, the display panel is a micro-light-emitting diode display panel or an organic light-emitting diode display panel.
本公开的其他特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本公开而了解。本公开的目的和其他优点在说明书、权利要求书以及附图中所特别指出的结构来实现和获得,本公开的一个或多个实施例的细节在下面的附图和描述中提出。Additional features and advantages of the disclosure will be set forth in the description which follows, and, in part, will be apparent from the description, or may be learned by practice of the disclosure. The objectives and other advantages of the disclosure may be realized and attained by the structure particularly pointed out in the specification, claims and appended drawings, and the details of one or more embodiments of the disclosure are set forth in the accompanying drawings and description below.
为使本公开的上述目的、特征和优点能更明显易懂,下文特举可选实施例,并配合所附附图,作详细说明如下。In order to make the above objects, features and advantages of the present disclosure more obvious and understandable, optional embodiments are listed below and described in detail with reference to the accompanying drawings.
附图说明Description of drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用来解释本公开的原理。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
为了更清楚地说明本公开实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,对于本领域普通技术人员而言,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following will briefly introduce the drawings needed to describe the embodiments or the prior art. Obviously, for those of ordinary skill in the art, It is said that other drawings can be obtained based on these drawings without exerting creative labor.
图1是本公开一个或多个实施例提供的一种像素电路的结构示意图;Figure 1 is a schematic structural diagram of a pixel circuit provided by one or more embodiments of the present disclosure;
图2是本公开一个或多个实施例提供的一种像素电路的驱动时序图;Figure 2 is a driving timing diagram of a pixel circuit provided by one or more embodiments of the present disclosure;
图3是本公开一个或多个实施例提供的一种像素电路的电压与电流随时间变化的示意图;FIG. 3 is a schematic diagram of voltage and current changes over time of a pixel circuit provided by one or more embodiments of the present disclosure;
图4是本公开一个或多个实施例提供的一种显示面板的结构示意图;Figure 4 is a schematic structural diagram of a display panel provided by one or more embodiments of the present disclosure;
其中,附图标记为:10、驱动单元;20、发光单元;30、第一写入单元;40、第二写入单元;50、时长调节单元;60、信号选择单元;70、复位单元;T1、第一薄膜晶体管;T2、第二薄膜晶体管;T3、第三薄膜晶体管;T4、第四薄膜晶体管;T5、第五薄膜晶体管;T6、第六薄膜晶体管;T7、第七薄膜晶体管;T8、第八薄膜晶体管;T9、第九薄膜晶体管;T10、第十薄膜晶体管;T11、第十一薄膜晶体管;EM、第一启动信号;G(n)、第二启动信号;G(n-1)、第三启动信号;Control、控制信号;Data1、第一数据电压;Data2、第二数据电压;C1、第一电容;C2、第二电容;Ca、耦合电容;Cb、耦合电容;Cc、耦合电容;S1、开启信号;S2、开启信号;S3、开启信号;Sweep、扫频信号;VDD、第一电源;VSS、第三电源;Vref、参考电压。Among them, the reference numbers are: 10. Driving unit; 20. Light-emitting unit; 30. First writing unit; 40. Second writing unit; 50. Duration adjustment unit; 60. Signal selection unit; 70. Reset unit; T1, first thin film transistor; T2, second thin film transistor; T3, third thin film transistor; T4, fourth thin film transistor; T5, fifth thin film transistor; T6, sixth thin film transistor; T7, seventh thin film transistor; T8 , eighth thin film transistor; T9, ninth thin film transistor; T10, tenth thin film transistor; T11, eleventh thin film transistor; EM, first start signal; G(n), second start signal; G(n-1 ), the third start signal; Control, control signal; Data1, first data voltage; Data2, second data voltage; C1, first capacitor; C2, second capacitor; Ca, coupling capacitor; Cb, coupling capacitor; Cc, Coupling capacitor; S1, turn-on signal; S2, turn-on signal; S3, turn-on signal; Sweep, frequency sweep signal; VDD, first power supply; VSS, third power supply; Vref, reference voltage.
具体实施方式Detailed ways
为了能够更清楚地理解本公开的上述目的、特征和优点,下面将对本公开的方案进行进一步描述。需要说明的是,在不冲突的情况下,本公开的实施例及实施例中的特征可以相互组合。In order to understand the above objects, features and advantages of the present disclosure more clearly, the solutions of the present disclosure will be further described below. It should be noted that, as long as there is no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.
在下面的描述中阐述了很多具体细节以便于充分理解本公开,但本公开还可以采用其他不同于在此描述的方式来实施;显然,说明书中的实施例只是本公开的一部分实施例,而不是全部的实施例。Many specific details are set forth in the following description to fully understand the present disclosure, but the present disclosure can also be implemented in other ways different from those described here; obviously, the embodiments in the description are only part of the embodiments of the present disclosure, and Not all examples.
本公开的说明书和权利要求书中的术语“第一”和“第二”等是用来区别不同的对象,而不是用来描述对象的特定顺序。例如,第一摄像头和第二摄像头是为了区别不同的摄像头,而不是为了描述摄像头的特定顺序。The terms "first", "second", etc. in the description and claims of the present disclosure are used to distinguish different objects, rather than to describe a specific order of objects. For example, the first camera and the second camera are used to distinguish different cameras, rather than to describe a specific order of the cameras.
在本公开实施例中,“示例性的”或者“例如”等词来表示作例子、例证或说明。本公开实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言,使用“示例性的”或者“例如”等词旨在以具体方式呈现相关概念,此外,在本公开实施例的描述中,除非另有说明,“多个”的含义是指两个或两个以上。In the embodiments of the present disclosure, words such as “exemplary” or “for example” mean examples, illustrations or explanations. Any embodiment or design described as "exemplary" or "such as" in the present disclosure is not intended to be construed as preferred or advantageous over other embodiments or designs. To be precise, the use of words such as "exemplary" or "such as" is intended to present relevant concepts in a specific manner. In addition, in the description of the embodiments of the present disclosure, unless otherwise stated, the meaning of "plurality" refers to both one or more than two.
下面将结合本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本公开保护的范围。The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only some of the embodiments of the present disclosure, not all of them. Based on the embodiments in this disclosure, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this disclosure.
需要说明的是,本公开实施例及附图中的术语“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是可选地还包括没有列出的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其它步骤或单元。It should be noted that the terms "including" and "having" and any variations thereof in the embodiments of the present disclosure and the drawings are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes Other steps or units inherent to such processes, methods, products or devices.
本公开实施例公开了一种像素电路及显示面板,能够选择不同驱动方式来改善低灰阶情形下的灰阶丢失或者显示不良,并且能够对发光时长进行控制。以下分别进行详细说明。Embodiments of the present disclosure disclose a pixel circuit and a display panel that can select different driving methods to improve gray scale loss or poor display in low gray scale situations, and can control the lighting duration. Each is explained in detail below.
请参阅图1,图1是本公开实施例公开的一种像素电路的结构示意 图。如图1所示,本公开实施例提供的像素电路可以用于显示面板中,用于发出显示光线。具体地,像素电路可以包括:驱动单元10、发光单元20、第一写入单元30、第二写入单元40、时长调节单元50以及信号选择单元60。Please refer to Figure 1. Figure 1 is a schematic structural diagram of a pixel circuit disclosed in an embodiment of the present disclosure. As shown in FIG. 1 , the pixel circuit provided by the embodiment of the present disclosure can be used in a display panel to emit display light. Specifically, the pixel circuit may include: a driving unit 10 , a light emitting unit 20 , a first writing unit 30 , a second writing unit 40 , a duration adjustment unit 50 and a signal selection unit 60 .
驱动单元10,用于根据第一电源驱动发光单元20进行发光;The driving unit 10 is used to drive the light-emitting unit 20 to emit light according to the first power supply;
第一写入单元30,用于向驱动单元10的第一节点写入第一数据电压以及补偿电压;The first writing unit 30 is used to write the first data voltage and the compensation voltage to the first node of the driving unit 10;
第二写入单元40,用于向时长调节单元50的第一节点写入第二数据电压;The second writing unit 40 is used to write the second data voltage to the first node of the duration adjustment unit 50;
信号选择单元60,用于选取不同的信号选择电路输出扫频信号;The signal selection unit 60 is used to select different signal selection circuits to output frequency sweep signals;
时长调节单元50,用于根据信号选择单元60所选取的信号选择电路输出的扫频信号、第二数据电压、第一电源、第一数据电压以及补偿电压,控制电流流过发光单元20的时长。The duration adjustment unit 50 is used to control the duration of the current flowing through the light-emitting unit 20 according to the frequency sweep signal output by the signal selection circuit selected by the signal selection unit 60, the second data voltage, the first power supply, the first data voltage and the compensation voltage. .
在本公开实施例中,发光单元20可以是现有技术中包括Micro LED(Micro Light Emitting Diode,微发光二极管)在内的电流驱动的发光器件,在本公开实施例中是以Micro LED为例进行说明。In the embodiment of the present disclosure, the light-emitting unit 20 may be a current-driven light-emitting device including Micro LED (Micro Light Emitting Diode) in the prior art. In the embodiment of the present disclosure, Micro LED is used as an example. Be explained.
采用上述实施例,第一写入单元30向电路中的Q节点写入第一数据电压以及补偿电压,其中,补偿电压为薄膜晶体管的栅极和漏极连接时产生的内部补偿电压;第二写入单元40向电路中的g节点写入第二数据电压,使得驱动单元10导通并输出电流至发光单元20使其发光。然后信号选择单元60选取不同信号选择电路输出扫频信号后,扫频信号与第二数据电压耦合使得时长调节单元50导通,时长调节单元50导通后Q点的电压与第一电源耦合使得驱动单元10断开,使得发光单元20停止发光。在这过程中信号选择单元60选取不同信号选择电路输出扫频信号能够控制时长调节单元50导通的快慢,进而实现对发光单元20的发光时长的控制。Using the above embodiment, the first writing unit 30 writes the first data voltage and the compensation voltage to the Q node in the circuit, where the compensation voltage is the internal compensation voltage generated when the gate and drain of the thin film transistor are connected; the second The writing unit 40 writes the second data voltage to the g node in the circuit, so that the driving unit 10 is turned on and outputs current to the light-emitting unit 20 to cause it to emit light. Then, after the signal selection unit 60 selects different signal selection circuits and outputs the frequency sweep signal, the frequency sweep signal is coupled with the second data voltage so that the duration adjustment unit 50 is turned on. After the duration adjustment unit 50 is turned on, the voltage at the Q point is coupled with the first power supply so that The driving unit 10 is turned off, so that the light emitting unit 20 stops emitting light. In this process, the signal selection unit 60 selects different signal selection circuits to output frequency sweep signals to control the conduction speed of the duration adjustment unit 50, thereby controlling the lighting duration of the light-emitting unit 20.
请再次参阅图1,在一个实施例中,信号选择单元60可以包括三个信号选择电路,各个信号选择电路包括一个薄膜晶体管以及一个耦合电容,各个耦合电容的电容值均不同;Please refer to Figure 1 again. In one embodiment, the signal selection unit 60 may include three signal selection circuits. Each signal selection circuit includes a thin film transistor and a coupling capacitor, and the capacitance values of each coupling capacitor are different;
各个薄膜晶体管的第一极分别与扫频信号连接,各个薄膜晶体管 的栅极分别连接一个开启信号,各个薄膜晶体管的第二极分别与对应的耦合电容的一端以及时长调节单元50的第二节点连接;The first electrode of each thin film transistor is respectively connected to the frequency sweep signal, the gate electrode of each thin film transistor is respectively connected to a turn-on signal, and the second electrode of each thin film transistor is respectively connected to one end of the corresponding coupling capacitor and the second node of the duration adjustment unit 50 connect;
各个耦合电容的另一端与第三电源连接。The other end of each coupling capacitor is connected to the third power supply.
驱动单元10包括第一薄膜晶体管T1、第二薄膜晶体管T2、第三薄膜晶体管T3以及第一电容C1;第一薄膜晶体管T1的第一极分别与第一电源、时长调节单元50的第三节点以及第一电容的一端连接,第一薄膜晶体管T1的第二极分别与第一写入单元30的第一节点以及第二薄膜晶体管T2的第一极连接;第二薄膜晶体管T2的第二极分别与第三薄膜晶体管T3的第一极以及第一写入单元30的第二节点连接;第三薄膜晶体管T3的第二极与发光单元20连接;第一薄膜晶体管T1的栅极以及第三薄膜晶体管T3的栅极与第一启动信号连接,第二薄膜晶体管T2的栅极分别与第一写入单元30的第四节点、时长调节单元50的第三节点以及第一电容的另一端连接。The driving unit 10 includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3 and a first capacitor C1; the first pole of the first thin film transistor T1 is connected to the first power supply and the third node of the duration adjustment unit 50 respectively. and one end of the first capacitor is connected, the second pole of the first thin film transistor T1 is connected to the first node of the first writing unit 30 and the first pole of the second thin film transistor T2 respectively; the second pole of the second thin film transistor T2 are respectively connected to the first electrode of the third thin film transistor T3 and the second node of the first writing unit 30; the second electrode of the third thin film transistor T3 is connected to the light emitting unit 20; the gate electrode of the first thin film transistor T1 and the third The gate of the thin film transistor T3 is connected to the first start signal, and the gate of the second thin film transistor T2 is connected to the fourth node of the first writing unit 30, the third node of the duration adjustment unit 50, and the other end of the first capacitor respectively. .
第一写入单元30包括第四薄膜晶体管T4和第五薄膜晶体管T5;第四薄膜晶体管T4的第一极与第一数据电压连接,第四薄膜晶体管T4的第二极分别与第一薄膜晶体管T1的第二极以及第二薄膜晶体管T2的第一极连接;第五薄膜晶体管T5的第一极分别与第二薄膜晶体管T2的第二极以及第三薄膜晶体管T3的第一极连接,第五薄膜晶体管T5的第二极分别与第二薄膜晶体管T2的栅极、时长调节单元50的第四节点以及第一电容的另一端连接;第四薄膜晶体管T4的栅极和第五薄膜晶体管T5的栅极分别与第二启动信号连接。The first writing unit 30 includes a fourth thin film transistor T4 and a fifth thin film transistor T5; the first electrode of the fourth thin film transistor T4 is connected to the first data voltage, and the second electrode of the fourth thin film transistor T4 is connected to the first thin film transistor respectively. The second electrode of T1 is connected to the first electrode of the second thin film transistor T2; the first electrode of the fifth thin film transistor T5 is connected to the second electrode of the second thin film transistor T2 and the first electrode of the third thin film transistor T3 respectively. The second electrode of the fifth thin film transistor T5 is respectively connected to the gate electrode of the second thin film transistor T2, the fourth node of the duration adjustment unit 50 and the other end of the first capacitor; the gate electrode of the fourth thin film transistor T4 and the fifth thin film transistor T5 The gates of are respectively connected with the second start signal.
第二写入单元40包括第六薄膜晶体管T6;第六薄膜晶体管T6的第一极与第二数据电压连接,第六薄膜晶体管T6的第二极与时长调节单元50的第一节点连接;第六薄膜晶体管T6的栅极与第二启动信号连接。The second writing unit 40 includes a sixth thin film transistor T6; the first electrode of the sixth thin film transistor T6 is connected to the second data voltage, and the second electrode of the sixth thin film transistor T6 is connected to the first node of the duration adjustment unit 50; The gate electrode of the six thin film transistors T6 is connected to the second start signal.
时长调节单元50包括第七薄膜晶体管T7、第八薄膜晶体管T8以及第二电容;第七薄膜晶体管T7的第一极分别与第一电源、第一薄膜晶体管T1的第一极以及第一电容的一端连接,第七薄膜晶体管T7的第二极分别与第八薄膜晶体管T8的第一极连接;第八薄膜晶体管T8的第二极分别与第五薄膜晶体管T5的第二极、第二薄膜晶体管T2的 栅极以及第一电容的另一端连接;第七薄膜晶体管T7的栅极分别与第六薄膜晶体管T6的第二极以及第二电容的一端连接,第八薄膜晶体管T8的栅极与控制信号连接;第二电容的另一端与信号选择单元60中各个耦合电容的一端连接。The duration adjustment unit 50 includes a seventh thin film transistor T7, an eighth thin film transistor T8, and a second capacitor; the first electrode of the seventh thin film transistor T7 is connected to the first power supply, the first electrode of the first thin film transistor T1, and the first capacitor respectively. One end is connected, the second pole of the seventh thin film transistor T7 is connected to the first pole of the eighth thin film transistor T8 respectively; the second pole of the eighth thin film transistor T8 is respectively connected to the second pole of the fifth thin film transistor T5 and the second thin film transistor T5. The gate electrode of T2 is connected to the other end of the first capacitor; the gate electrode of the seventh thin film transistor T7 is connected to the second electrode of the sixth thin film transistor T6 and one end of the second capacitor respectively, and the gate electrode of the eighth thin film transistor T8 is connected to the control signal connection; the other end of the second capacitor is connected to one end of each coupling capacitor in the signal selection unit 60 .
请再次参阅图1,在一个实施例中,像素电路还包括复位单元70;Please refer to Figure 1 again. In one embodiment, the pixel circuit further includes a reset unit 70;
复位单元70,用于将驱动单元10的第一节点以及时长调节单元50的第一节点的电压调节至参考电压。The reset unit 70 is used to adjust the voltages of the first node of the driving unit 10 and the first node of the duration adjustment unit 50 to the reference voltage.
复位单元70包括第九薄膜晶体管T9、第十薄膜晶体管T10以及第十一薄膜晶体管T11;第九薄膜晶体管T9的第一极分别与发光单元20的输入端以及第三薄膜晶体管T3的第二极连接,第九薄膜晶体管T9的第二极分别与参考电压、第十薄膜晶体管T10的第一极以及第十一薄膜晶体管T11的第一极连接;第十薄膜晶体管T10的第二极分别与第八薄膜晶体管T8的第二极、第五薄膜晶体管T5的第二极、第二薄膜晶体管T2的栅极以及第一电容的另一端连接;第十一薄膜晶体管T11的第二极分别与第七薄膜晶体管T7的栅极、第六薄膜晶体管T6的第二极以及第二电容的一端连接;第九薄膜晶体管T9的栅极、第十薄膜晶体管T10的栅极以及第十一薄膜晶体管T11的栅极分别与第三启动信号连接。The reset unit 70 includes a ninth thin film transistor T9 , a tenth thin film transistor T10 and an eleventh thin film transistor T11 ; the first electrode of the ninth thin film transistor T9 is connected to the input end of the light emitting unit 20 and the second electrode of the third thin film transistor T3 respectively. connection, the second pole of the ninth thin film transistor T9 is respectively connected to the reference voltage, the first pole of the tenth thin film transistor T10 and the first pole of the eleventh thin film transistor T11; the second pole of the tenth thin film transistor T10 is respectively connected to the first pole of the tenth thin film transistor T10. The second electrode of the eighth thin film transistor T8, the second electrode of the fifth thin film transistor T5, the gate electrode of the second thin film transistor T2 and the other end of the first capacitor are connected; the second electrode of the eleventh thin film transistor T11 is connected to the seventh thin film transistor T11 respectively. The gate electrode of the thin film transistor T7, the second electrode of the sixth thin film transistor T6 and one end of the second capacitor are connected; the gate electrode of the ninth thin film transistor T9, the gate electrode of the tenth thin film transistor T10 and the gate of the eleventh thin film transistor T11 The poles are respectively connected to the third start signal.
在本公开实施例中,所有薄膜晶体管均为P型晶体管,但在其他实施例中,并不以上述P型晶体管或P型晶体管为限。需要说明的是,对于P型累积模式晶体管,当所加的V GS为正电压,器件工作在一个耗尽模式,导电沟道的载流子被耗尽,产生一个高的沟道电阻,此时器件处于关态;当所加的V GS为负电压时,器件工作在一个累积模式,大量的载流子被累积在半导体层和绝缘层的界面处,形成低电阻的导电沟道,此时器件处于开态。In the embodiments of the present disclosure, all thin film transistors are P-type transistors, but in other embodiments, they are not limited to the above-mentioned P-type transistors or P-type transistors. It should be noted that for P-type accumulation mode transistors, when the applied V GS is a positive voltage, the device operates in a depletion mode, and the carriers in the conductive channel are depleted, resulting in a high channel resistance. At this time The device is in the off state; when the applied V GS is a negative voltage, the device operates in an accumulation mode, and a large number of carriers are accumulated at the interface between the semiconductor layer and the insulating layer, forming a low-resistance conductive channel. At this time, the device is on.
在本公开实施例中,请参阅图2,图2为一个实施例公开的时序图,基于图1中的像素电路以及图2中的时序,实现发光单元20的发光时长控制的过程包括:In the embodiment of the present disclosure, please refer to FIG. 2 , which is a timing diagram disclosed in an embodiment. Based on the pixel circuit in FIG. 1 and the timing in FIG. 2 , the process of realizing the lighting duration control of the light-emitting unit 20 includes:
在写入与补偿阶段t1中,第二启动信号G(n)输入低电平,此时第四薄膜晶体管T4、第五薄膜晶体管T5以及第六薄膜晶体管T6打开, 此时由于第五薄膜晶体管T5的第一极和第二极分别连接第二薄膜晶体管T2的栅极以及第二极,因此使得第二薄膜晶体管T2微微导通,从而第一数据电压依次经过第四薄膜晶体管T4、第二薄膜晶体管T2以及第五薄膜晶体管T5,被写入到电路中的Q节点,而且由于第五薄膜晶体管T5的第一极和第二极分别连接第二薄膜晶体管T2的栅极以及第二极会发生内部电路补偿,因此内部电路补偿的电压V th与第一数据电压一并存储到电路中的Q节点。而第六薄膜晶体管T6导通后,第二数据电压经过第六薄膜晶体管T6,被写入到电路中的g节点。In the writing and compensation phase t1, the second start signal G(n) inputs a low level. At this time, the fourth thin film transistor T4, the fifth thin film transistor T5, and the sixth thin film transistor T6 are turned on. At this time, due to the fifth thin film transistor The first electrode and the second electrode of T5 are connected to the gate electrode and the second electrode of the second thin film transistor T2 respectively, thus causing the second thin film transistor T2 to be slightly turned on, so that the first data voltage passes through the fourth thin film transistor T4 and the second thin film transistor T2 in sequence. The thin film transistor T2 and the fifth thin film transistor T5 are written to the Q node in the circuit, and because the first electrode and the second electrode of the fifth thin film transistor T5 are respectively connected to the gate electrode and the second electrode of the second thin film transistor T2, Internal circuit compensation occurs, so the internal circuit compensated voltage V th is stored to the Q node in the circuit together with the first data voltage. After the sixth thin film transistor T6 is turned on, the second data voltage passes through the sixth thin film transistor T6 and is written to the g node in the circuit.
其中,通过电流公式(1):Among them, the passing current formula (1):
Figure PCTCN2022138783-appb-000001
Figure PCTCN2022138783-appb-000001
其中,I ds为第二薄膜晶体管T2的源漏电流,V ds为第二薄膜晶体管T2的源漏电压,k为失调电压温度系数,V GS为第二薄膜晶体管T2的栅源电压,V th为补偿电压。由于I ds=0,可以得出V GS=V th。因此V GS=V g(Q点电压)-V s(第一数据电压Data1)=V th,可见Q点电压为V s(第一数据电压Data1)+V thWherein, I ds is the source-drain current of the second thin film transistor T2, V ds is the source-drain voltage of the second thin film transistor T2, k is the offset voltage temperature coefficient, V GS is the gate-source voltage of the second thin film transistor T2, V th is the compensation voltage. Since I ds =0, it can be concluded that V GS =V th . Therefore, V GS =V g (Q point voltage) - V s (first data voltage Data1) = V th , it can be seen that the Q point voltage is V s (first data voltage Data1) + V th .
在发光阶段t2中,第二启动信号G(n)和第三启动信号G(n-1)输入高电平,第一启动信号EM输入低电平,因此第四薄膜晶体管T4、第五薄膜晶体管T5以及第六薄膜晶体管T6关闭,第一薄膜晶体管T1和第三薄膜晶体管T3打开。由于在写入与补偿阶段t1中,电路中的节点Q被写入了第一数据电压以及补偿电压,因此第三薄膜晶体管T3在发光阶段t2打开。第一电源通过第一薄膜晶体管T1、第二薄膜晶体管T2以及第三薄膜晶体管T3输入到Micro LED,使得Micro LED发光。In the light-emitting phase t2, the second start-up signal G(n) and the third start-up signal G(n-1) input a high level, and the first start-up signal EM inputs a low level. Therefore, the fourth thin film transistor T4 and the fifth thin film transistor T4 The transistor T5 and the sixth thin film transistor T6 are turned off, and the first thin film transistor T1 and the third thin film transistor T3 are turned on. Since the first data voltage and the compensation voltage are written to the node Q in the circuit during the writing and compensation phase t1, the third thin film transistor T3 is turned on during the light emitting phase t2. The first power supply is input to the Micro LED through the first thin film transistor T1, the second thin film transistor T2 and the third thin film transistor T3, so that the Micro LED emits light.
与此同时,信号选择单元60输出的Sweep电压由高电平线性降低,并在Micro LED持续发光的过程中拉低到低电平,此时Sweep电压与g点被写入的第二数据电压通过第二电容形成电容耦合,电容耦合会把g点电压随时间往低电平方向进行耦合。由于在发光阶段t2中控制信号为低电平,因此第八薄膜晶体管T8打开,时长调节单元50与驱动单元10相连接。在发光阶段t2中,当g点电压由第二数据电压受到Sweep电压的电容耦合降低到第七薄膜晶体管T7的阈值电压时,第七薄膜晶 体管T7打开,Q点电压会瞬间被第一电源通过第七薄膜晶体管T7从第一数据电压与补偿电压的电压值之和,拉高至第一电源的电压值。此时第二薄膜晶体管T2就会因为Q点电压拉高关闭,而Micro LED则因为第二薄膜晶体管T2关闭没有电流通过而停止发光。At the same time, the Sweep voltage output by the signal selection unit 60 decreases linearly from a high level, and is pulled down to a low level while the Micro LED continues to emit light. At this time, the Sweep voltage is consistent with the second data voltage written at the g point. Capacitive coupling is formed through the second capacitor, and the capacitive coupling couples the g-point voltage toward a low level over time. Since the control signal is low level in the light-emitting phase t2, the eighth thin film transistor T8 is turned on, and the duration adjustment unit 50 is connected to the driving unit 10. In the light-emitting phase t2, when the g-point voltage is reduced to the threshold voltage of the seventh thin film transistor T7 by the capacitive coupling of the Sweep voltage from the second data voltage, the seventh thin film transistor T7 is turned on, and the Q-point voltage is instantly passed by the first power supply. The seventh thin film transistor T7 is pulled up from the sum of the voltage value of the first data voltage and the compensation voltage to the voltage value of the first power supply. At this time, the second thin film transistor T2 will turn off because the Q point voltage is pulled high, and the Micro LED will stop emitting light because the second thin film transistor T2 is turned off and no current flows through it.
因此,在将第二数据电压写入g点并进入发光阶段t2后,因为Sweep电压与第二数据电压的耦合开启第七薄膜晶体管T7,使得时长调节单元50与驱动单元10相连接,进而使得第一电源与第一数据电压以及补偿电压进行耦合以关闭第二薄膜晶体管T2。因此,可以通过控制Sweep电压与第二数据电压的电容耦合速度来控制时长调节单元50与驱动单元10相连接的时间,进而控制发光单元20的发光时长。Therefore, after writing the second data voltage to point g and entering the light-emitting phase t2, the seventh thin film transistor T7 is turned on due to the coupling between the Sweep voltage and the second data voltage, so that the duration adjustment unit 50 is connected to the driving unit 10, thereby making The first power supply is coupled with the first data voltage and the compensation voltage to turn off the second thin film transistor T2. Therefore, the time during which the duration adjustment unit 50 is connected to the driving unit 10 can be controlled by controlling the capacitive coupling speed of the Sweep voltage and the second data voltage, thereby controlling the lighting duration of the light-emitting unit 20 .
在一个实施例中,请再次参阅图1和图2,实现发光单元20的发光时长控制的过程还包括:In one embodiment, please refer to Figures 1 and 2 again, the process of controlling the lighting duration of the light-emitting unit 20 also includes:
在复位阶段t0中,第三启动信号G(n-1)输入低电平,第九薄膜晶体管T9、第十薄膜晶体管T10以及第十一薄膜晶体管T11开启,此时参考电压分别经过第九薄膜晶体管T9、第十薄膜晶体管T10以及第十一薄膜晶体管T11,将电路中Q节点的电压、g节点的电压以及Micro LED输入端的电压拉至参考电压的值。使得电路中的关键节点在每一帧开始时后会回归到同一个电压基准点再开始资料写入,能够确保每一次资料写入前重要节点的电压状态是一致的。In the reset phase t0, the third start signal G(n-1) inputs a low level, and the ninth thin film transistor T9, the tenth thin film transistor T10, and the eleventh thin film transistor T11 are turned on. At this time, the reference voltage passes through the ninth thin film transistor respectively. The transistor T9, the tenth thin film transistor T10, and the eleventh thin film transistor T11 pull the voltage of the Q node, the voltage of the g node, and the voltage of the Micro LED input terminal in the circuit to the value of the reference voltage. This allows the key nodes in the circuit to return to the same voltage reference point at the beginning of each frame before starting data writing, ensuring that the voltage status of important nodes is consistent before each data writing.
在一个实施例中,请参阅图3,图3为一个实施例公开的电压与电流随时间变化的示意图。在本公开实施例中,信号选择单元60中电容Cc的电容值大于电容Cb的电容值,电容Cb的电容值则大于电容Ca的电容值。而图3中给出了信号选择单元60选择的信号选择电路中的耦合电容分别为电容Ca、电容Cb以及电容Cc时,电路中g点的电压与Sweep扫频信号进行电容耦合以达到第七薄膜晶体管T7开启电压的时间变化图。图3中还给出了信号选择单元60选择的信号选择电路中的耦合电容分别为电容Ca、电容Cb以及电容Cc时,流经发光单元20的电流的时间变化图。因此,结合图3以及电容Ca、电容Cb和电容Cc之间的电容值大小关系,可以得知信号选择单元60选择的信号选择电路中的耦合电容越大时,g点的电压被电容耦合至低电平以开启 第七薄膜晶体管T7的时间也越长,进而电流能够流通至发光单元20的时间也越长,也就是发光单元20的发光时长也越长,因此信号选择单元60选取的信号选择电路中的耦合电容的电容值,与时长调节单元50控制电流流过发光单元20的时长成正相关关系。In one embodiment, please refer to FIG. 3 , which is a schematic diagram of changes in voltage and current over time disclosed in an embodiment. In the embodiment of the present disclosure, the capacitance value of the capacitor Cc in the signal selection unit 60 is greater than the capacitance value of the capacitor Cb, and the capacitance value of the capacitor Cb is greater than the capacitance value of the capacitor Ca. 3 shows that when the coupling capacitors in the signal selection circuit selected by the signal selection unit 60 are capacitor Ca, capacitor Cb and capacitor Cc, the voltage at point g in the circuit is capacitively coupled with the Sweep signal to achieve the seventh Time variation diagram of the turn-on voltage of thin film transistor T7. FIG. 3 also shows the time variation diagram of the current flowing through the light-emitting unit 20 when the coupling capacitors in the signal selection circuit selected by the signal selection unit 60 are capacitance Ca, capacitance Cb and capacitance Cc respectively. Therefore, combined with FIG. 3 and the relationship between the capacitance values of the capacitance Ca, the capacitance Cb and the capacitance Cc, it can be known that when the coupling capacitance in the signal selection circuit selected by the signal selection unit 60 is larger, the voltage at point g is capacitively coupled to The longer the low level is to turn on the seventh thin film transistor T7, the longer the current can flow to the light-emitting unit 20, that is, the longer the light-emitting time of the light-emitting unit 20 is. Therefore, the signal selected by the signal selection unit 60 The capacitance value of the coupling capacitor in the selection circuit is positively correlated with the time period during which the duration adjustment unit 50 controls the current to flow through the light-emitting unit 20 .
在本公开实施例中,请再次参阅图1,在信号选择单元60中包含了三个信号选择电路,第一个信号选择电路中包含了一个薄膜晶体管以及耦合电容Ca,这个薄膜晶体管由开启信号S1控制开启或者关闭;第二个信号选择电路中包含了一个薄膜晶体管以及耦合电容Cb,这个薄膜晶体管由开启信号S2控制开启或者关闭;第三个信号选择电路中包含了一个薄膜晶体管以及耦合电容Cc,这个薄膜晶体管由开启信号S3控制开启或者关闭。其中,在开启信号为低电平时,对应的薄膜晶体管开启。因此,根据电容值与g点电压的耦合速度以及发光单元20的发光时长的关系,通过各个开启信号能够更好地选取合适的信号选择电路的耦合电容,从而对发光单元20的发光时长进行有效地控制。In the embodiment of the present disclosure, please refer to FIG. 1 again. The signal selection unit 60 includes three signal selection circuits. The first signal selection circuit includes a thin film transistor and a coupling capacitor Ca. This thin film transistor is controlled by a turn-on signal. S1 controls on or off; the second signal selection circuit includes a thin film transistor and coupling capacitor Cb, which is controlled on or off by the turn-on signal S2; the third signal selection circuit includes a thin film transistor and coupling capacitor Cc, this thin film transistor is turned on or off controlled by the turn-on signal S3. Wherein, when the turn-on signal is low level, the corresponding thin film transistor is turned on. Therefore, according to the relationship between the capacitance value and the coupling speed of the g-point voltage and the lighting duration of the light-emitting unit 20, the coupling capacitance of the appropriate signal selection circuit can be better selected through each turn-on signal, thereby effectively controlling the lighting duration of the light-emitting unit 20. ground control.
在一个实施例中提供一种显示面板,包括多个像素电路,像素电路为上述任意一实施例所述的像素电路。In one embodiment, a display panel is provided, including a plurality of pixel circuits, and the pixel circuits are the pixel circuits described in any of the above embodiments.
在本公开实施例中,显示面板可为微发光二极管(Micro-LED)显示面板、有机发光二极管(OLED)显示面板,且可应用于电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品中。In embodiments of the present disclosure, the display panel can be a Micro-LED display panel or an Organic Light-emitting Diode (OLED) display panel, and can be applied to electronic paper, mobile phones, tablets, televisions, monitors, and notebook computers. , digital photo frames, navigators and other products with display functions.
在一个实施例中,请参阅图4,图4为一个实施例公开的显示面板的结构示意图。显示面板400包括显示区域410和位于显示区域外围的边缘区域,驱动单元、发光单元、第一写入单元、第二写入单元、时长调节单元均位于显示区域410,信号选择单元设置在边缘区域。In one embodiment, please refer to FIG. 4 , which is a schematic structural diagram of a display panel disclosed in one embodiment. The display panel 400 includes a display area 410 and an edge area located at the periphery of the display area. The driving unit, the light-emitting unit, the first writing unit, the second writing unit, and the duration adjustment unit are all located in the display area 410. The signal selection unit is disposed in the edge area. .
在一些实施例中,复位单元也位于显示区域410。其中,复位单元位于显示区域,能够令复位阶段与写入与补偿阶段以及发光阶段更好地相结合。In some embodiments, the reset unit is also located in the display area 410. Among them, the reset unit is located in the display area, which can better combine the reset stage with the writing and compensation stages and the light-emitting stage.
在一个实施例中,请再次参阅图4,边缘区域包括走线区域420和空白区域430,信号选择单元设置在空白区域430。其中,空白区域上的每个信号选择单元对应一个像素电路。通过将常规像素电路增加 的信号选择单元集成到显示面板上的边缘区域乃至空白区域,能够降低成本,且不影响显示面板上常规像素电路的走线情况。In one embodiment, please refer to FIG. 4 again, the edge area includes a wiring area 420 and a blank area 430, and the signal selection unit is disposed in the blank area 430. Wherein, each signal selection unit on the blank area corresponds to a pixel circuit. By integrating the signal selection unit added by the conventional pixel circuit into the edge area or even the blank area of the display panel, the cost can be reduced without affecting the wiring of the conventional pixel circuit on the display panel.
应理解,说明书通篇中提到的“一个实施例”或“一实施例”意味着与实施例有关的特定特征、结构或特性包括在本公开的至少一个实施例中。因此,在整个说明书各处出现的“在一个实施例中”或“在一实施例中”未必一定指相同的实施例。此外,这些特定特征、结构或特性可以以任意适合的方式结合在一个或多个实施例中。本领域技术人员也应该知悉,说明书中所描述的实施例均属于可选实施例,所涉及的动作和单元并不一定是本公开所必须的。It will be understood that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic associated with the embodiment is included in at least one embodiment of the present disclosure. Thus, the appearances of "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments. Those skilled in the art should also know that the embodiments described in the specification are optional embodiments, and the actions and units involved are not necessarily necessary for the present disclosure.
在本公开的各种实施例中,应理解,上述各过程的序号的大小并不意味着执行顺序的必然先后,各过程的执行顺序应以其功能和内在逻辑确定,而不应对本公开实施例的实施过程构成任何限定。In various embodiments of the present disclosure, it should be understood that the size of the sequence numbers of the above-mentioned processes does not necessarily mean the order of execution. The execution order of each process should be determined by its functions and internal logic, and should not be implemented in the present disclosure. The implementation of the examples does not constitute any limitations.
上述作为分离部件说明的单元可以是或者也可以不是物理上分开的,作为单元显示的部件可以是或者也可以不是物单元,即可位于一个地方,或者也可以分布到多个网络单元上。可根据实际的需要选择其中的部分或全部单元来实现本实施例方案的目的。The units described above as separate components may or may not be physically separated. The components shown as units may or may not be physical units, that is, they may be located in one place, or they may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of this embodiment.
另外,在本公开各实施例中的各功能单元可以集成在一个处理单元中,也可以是各个单元单独物理存在,也可以两个或两个以上单元集成在一个单元中。上述集成的单元既可以采用硬件的形式实现,也可以采用软件功能单元的形式实现。In addition, each functional unit in each embodiment of the present disclosure may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit. The above integrated units can be implemented in the form of hardware or software functional units.
以上对本公开实施例公开的一种像素电路及显示面板进行了详细介绍,本文中应用了具体个例对本公开的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本公开的方法及其核心思想。同时,对于本领域的一般技术人员,根据本公开的思想,在具体实施方式及应用范围上均会有改变之处,综上所述,本说明书内容不应理解为对本公开的限制。The above has introduced in detail a pixel circuit and a display panel disclosed in the embodiments of the present disclosure. This article uses specific examples to illustrate the principles and implementations of the present disclosure. The description of the above embodiments is only used to help understand the present disclosure. methods and their core ideas. At the same time, for those of ordinary skill in the art, there will be changes in the specific implementation and application scope based on the ideas of the present disclosure. In summary, the contents of this description should not be understood as limiting the present disclosure.
工业实用性Industrial applicability
本公开提供的像素电路包括驱动单元、发光单元、第一写入单元、第二写入单元、时长调节单元以及信号选择单元。其中,驱动单元, 用于根据第一电源驱动所述发光单元进行发光;第一写入单元,用于向驱动单元的第一节点写入第一数据电压以及补偿电压;第二写入单元,用于向时长调节单元的第一节点写入第二数据电压;信号选择单元,用于选取不同的信号选择电路输出扫频信号;时长调节单元,用于根据信号选择单元所选取的信号选择电路输出的扫频信号、第二数据电压、第一电源、第一数据电压以及补偿电压,控制电流流过发光单元的时长。能够选择不同驱动方式来改善低灰阶情形下的灰阶丢失或者显示不良,并且能够对发光时长进行控制,具有很强的工业实用性。The pixel circuit provided by the present disclosure includes a driving unit, a light emitting unit, a first writing unit, a second writing unit, a duration adjustment unit and a signal selection unit. Wherein, the driving unit is used to drive the light-emitting unit to emit light according to the first power supply; the first writing unit is used to write the first data voltage and the compensation voltage to the first node of the driving unit; the second writing unit, Used to write the second data voltage to the first node of the duration adjustment unit; the signal selection unit is used to select different signal selection circuits to output sweep signals; the duration adjustment unit is used to select the circuit according to the signal selected by the signal selection unit The output sweep signal, the second data voltage, the first power supply, the first data voltage and the compensation voltage control the duration of current flowing through the light-emitting unit. Different driving methods can be selected to improve gray scale loss or poor display in low gray scale situations, and the lighting duration can be controlled, which has strong industrial applicability.

Claims (15)

  1. 一种像素电路,包括驱动单元、发光单元、第一写入单元、第二写入单元、时长调节单元以及信号选择单元;A pixel circuit including a driving unit, a light-emitting unit, a first writing unit, a second writing unit, a duration adjustment unit and a signal selection unit;
    所述驱动单元,用于根据第一电源驱动所述发光单元进行发光;The driving unit is used to drive the light-emitting unit to emit light according to the first power supply;
    所述第一写入单元,用于向所述驱动单元的第一节点写入第一数据电压以及补偿电压;The first writing unit is used to write the first data voltage and the compensation voltage to the first node of the driving unit;
    所述第二写入单元,用于向所述时长调节单元的第一节点写入第二数据电压;The second writing unit is used to write a second data voltage to the first node of the duration adjustment unit;
    所述信号选择单元,用于选取不同的信号选择电路输出扫频信号;The signal selection unit is used to select different signal selection circuits to output frequency sweep signals;
    所述时长调节单元,用于根据所述信号选择单元所选取的信号选择电路输出的扫频信号、所述第二数据电压、所述第一电源、所述第一数据电压以及补偿电压,控制电流流过所述发光单元的时长。The duration adjustment unit is used to control the frequency sweep signal output by the signal selection circuit selected by the signal selection unit, the second data voltage, the first power supply, the first data voltage and the compensation voltage. The length of time that current flows through the light-emitting unit.
  2. 根据权利要求1所述的电路,其中,所述信号选择单元包括三个所述信号选择电路,各个所述信号选择电路包括一个薄膜晶体管以及一个耦合电容,各个所述耦合电容的电容值均不同;The circuit according to claim 1, wherein the signal selection unit includes three signal selection circuits, each of the signal selection circuits includes a thin film transistor and a coupling capacitor, and the capacitance value of each of the coupling capacitors is different. ;
    各个所述薄膜晶体管的第一极分别与所述扫频信号连接,各个所述薄膜晶体管的栅极分别连接一个开启信号,各个所述薄膜晶体管的第二极分别与对应的耦合电容的一端以及所述时长调节单元的第二节点连接;The first electrode of each thin film transistor is connected to the frequency sweep signal, the gate electrode of each thin film transistor is connected to a turn-on signal, and the second electrode of each thin film transistor is connected to one end of the corresponding coupling capacitor and The second node connection of the duration adjustment unit;
    各个所述耦合电容的另一端与所述第三电源连接。The other end of each coupling capacitor is connected to the third power supply.
  3. 根据权利要求2所述的电路,其中,所述驱动单元包括第一薄膜晶体管、第二薄膜晶体管、第三薄膜晶体管以及第一电容;The circuit of claim 2, wherein the driving unit includes a first thin film transistor, a second thin film transistor, a third thin film transistor and a first capacitor;
    所述第一薄膜晶体管的第一极分别与所述第一电源、所述时长调节单元的第三节点以及所述第一电容的一端连接,所述第一薄膜晶体管的第二极分别与所述第一写入单元的第一节点以及所述第二薄膜晶体管的第一极连接;The first pole of the first thin film transistor is respectively connected to the first power supply, the third node of the duration adjustment unit and one end of the first capacitor, and the second pole of the first thin film transistor is respectively connected to the first power supply, the third node of the duration adjustment unit and one end of the first capacitor. The first node of the first writing unit and the first pole of the second thin film transistor are connected;
    所述第二薄膜晶体管的第二极分别与所述第三薄膜晶体管的第一极以及所述第一写入单元的第二节点连接;The second pole of the second thin film transistor is connected to the first pole of the third thin film transistor and the second node of the first writing unit respectively;
    所述第三薄膜晶体管的第二极与所述发光单元连接;The second electrode of the third thin film transistor is connected to the light-emitting unit;
    所述第一薄膜晶体管的栅极以及所述第三薄膜晶体管的栅极与第一启动信号连接,所述第二薄膜晶体管的栅极分别与所述第一写入单元的第四节点、所述时长调节单元的第三节点以及所述第一电容的另一端连接。The gate electrode of the first thin film transistor and the gate electrode of the third thin film transistor are connected to the first start signal, and the gate electrode of the second thin film transistor is respectively connected to the fourth node of the first writing unit and the first writing unit. The third node of the duration adjustment unit is connected to the other end of the first capacitor.
  4. 根据权利要求3所述的电路,其中,所述第一写入单元包括第四薄膜晶体管和第五薄膜晶体管;The circuit of claim 3, wherein the first writing unit includes a fourth thin film transistor and a fifth thin film transistor;
    所述第四薄膜晶体管的第一极与所述第一数据电压连接,所述第四薄膜晶体管的第二极分别与所述第一薄膜晶体管的第二极以及所述第二薄膜晶体管的第一极连接;The first electrode of the fourth thin film transistor is connected to the first data voltage, and the second electrode of the fourth thin film transistor is connected to the second electrode of the first thin film transistor and the second electrode of the second thin film transistor respectively. One pole connection;
    所述第五薄膜晶体管的第一极分别与所述第二薄膜晶体管的第二极以及所述第三薄膜晶体管的第一极连接,所述第五薄膜晶体管的第二极分别与所述第二薄膜晶体管的栅极、所述时长调节单元的第四节点以及所述第一电容的另一端连接;The first electrode of the fifth thin film transistor is respectively connected to the second electrode of the second thin film transistor and the first electrode of the third thin film transistor, and the second electrode of the fifth thin film transistor is respectively connected to the second electrode of the third thin film transistor. The gates of the two thin film transistors, the fourth node of the duration adjustment unit and the other end of the first capacitor are connected;
    所述第四薄膜晶体管的栅极和所述第五薄膜晶体管的栅极分别与第二启动信号连接。The gate electrode of the fourth thin film transistor and the gate electrode of the fifth thin film transistor are respectively connected to the second start signal.
  5. 根据权利要求4所述的电路,其中,所述第二写入单元包括第六薄膜晶体管;The circuit of claim 4, wherein the second writing unit includes a sixth thin film transistor;
    所述第六薄膜晶体管的第一极与所述第二数据电压连接,所述第六薄膜晶体管的第二极与所述时长调节单元的第一节点连接;The first pole of the sixth thin film transistor is connected to the second data voltage, and the second pole of the sixth thin film transistor is connected to the first node of the duration adjustment unit;
    所述第六薄膜晶体管的栅极与所述第二启动信号连接。The gate electrode of the sixth thin film transistor is connected to the second start signal.
  6. 根据权利要求5所述的电路,其中,所述时长调节单元包括第七薄膜晶体管、第八薄膜晶体管以及第二电容;The circuit of claim 5, wherein the duration adjustment unit includes a seventh thin film transistor, an eighth thin film transistor and a second capacitor;
    所述第七薄膜晶体管的第一极分别与所述第一电源、所述第一薄膜晶体管的第一极以及所述第一电容的一端连接,所述第七薄膜晶体管的第二极分别与所述第八薄膜晶体管的第一极连接;The first pole of the seventh thin film transistor is respectively connected to the first power supply, the first pole of the first thin film transistor and one end of the first capacitor, and the second pole of the seventh thin film transistor is respectively connected to The first electrode of the eighth thin film transistor is connected;
    所述第八薄膜晶体管的第二极分别与所述第五薄膜晶体管的第二极、所述第二薄膜晶体管的栅极以及所述第一电容的另一端连接;The second electrode of the eighth thin film transistor is respectively connected to the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor, and the other end of the first capacitor;
    所述第七薄膜晶体管的栅极分别与第六薄膜晶体管的第二极以及所述第二电容的一端连接,所述第八薄膜晶体管的栅极与控制信号连接;The gate electrode of the seventh thin film transistor is connected to the second electrode of the sixth thin film transistor and one end of the second capacitor respectively, and the gate electrode of the eighth thin film transistor is connected to the control signal;
    所述第二电容的另一端与所述信号选择单元中各个所述耦合电容的一端连接。The other end of the second capacitor is connected to one end of each coupling capacitor in the signal selection unit.
  7. 根据权利要求6所述的电路,其中,所述电路还包括复位单元;The circuit of claim 6, wherein the circuit further includes a reset unit;
    所述复位单元,用于将所述驱动单元的第一节点以及所述时长调节单元的第一节点的电压调节至参考电压。The reset unit is used to adjust the voltages of the first node of the driving unit and the first node of the duration adjustment unit to a reference voltage.
  8. 根据权利要求7所述的电路,其中,所述复位单元包括第九薄膜晶体管、第十薄膜晶体管以及第十一薄膜晶体管;The circuit of claim 7, wherein the reset unit includes a ninth thin film transistor, a tenth thin film transistor, and an eleventh thin film transistor;
    第九薄膜晶体管的第一极分别与所述发光单元的输入端以及所述第三薄膜晶体管的第二极连接,所述第九薄膜晶体管的第二极分别与所述参考电压、所述第十薄膜晶体管的第一极以及所述第十一薄膜晶体管的第一极连接;The first pole of the ninth thin film transistor is respectively connected to the input terminal of the light-emitting unit and the second pole of the third thin film transistor, and the second pole of the ninth thin film transistor is respectively connected to the reference voltage and the third thin film transistor. The first electrode of the tenth thin film transistor is connected to the first electrode of the eleventh thin film transistor;
    所述第十薄膜晶体管的第二极分别与所述第八薄膜晶体管的第二极、所述第五薄膜晶体管的第二极、所述第二薄膜晶体管的栅极以及所述第一电容的另一端连接;The second electrode of the tenth thin film transistor is connected to the second electrode of the eighth thin film transistor, the second electrode of the fifth thin film transistor, the gate electrode of the second thin film transistor and the first capacitor respectively. Connect the other end;
    所述第十一薄膜晶体管的第二极分别与所述第七薄膜晶体管的栅极、第六薄膜晶体管的第二极以及所述第二电容的一端连接;The second electrode of the eleventh thin film transistor is respectively connected to the gate electrode of the seventh thin film transistor, the second electrode of the sixth thin film transistor, and one end of the second capacitor;
    所述第九薄膜晶体管的栅极、所述第十薄膜晶体管的栅极以及所述第十一薄膜晶体管的栅极分别与第三启动信号连接。The gate electrode of the ninth thin film transistor, the gate electrode of the tenth thin film transistor, and the gate electrode of the eleventh thin film transistor are respectively connected to the third start signal.
  9. 根据权利要求2至8任一所述的电路,其中,所述信号选择单元选取的信号选择电路中的耦合电容的电容值,与所述时长调节单元控制电流流过所述发光单元的时长成正相关关系。The circuit according to any one of claims 2 to 8, wherein the capacitance value of the coupling capacitor in the signal selection circuit selected by the signal selection unit is proportional to the time period during which the duration adjustment unit controls the current to flow through the light-emitting unit. relationship.
  10. 根据权利要求8所述的电路,其中,所述第一薄膜晶体管、所述第二薄膜晶体管、所述第三薄膜晶体管、所述第四薄膜晶体管、所述第五薄膜晶体管、所述第六薄膜晶体管、所述第七薄膜晶体管、所述第八薄膜晶体管、所述第九薄膜晶体管、所述第十薄膜晶体管、所述第十一薄膜晶体管中的至少一个为P型晶体管。The circuit of claim 8, wherein the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, the sixth thin film transistor, At least one of the thin film transistor, the seventh thin film transistor, the eighth thin film transistor, the ninth thin film transistor, the tenth thin film transistor, and the eleventh thin film transistor is a P-type transistor.
  11. 一种显示面板,包括多个像素电路,所述像素电路为权利要求1至10任一所述的像素电路。A display panel includes a plurality of pixel circuits, and the pixel circuits are the pixel circuits described in any one of claims 1 to 10.
  12. 根据权利要求11所述的显示面板,其中,所述显示面板包括显示区域和位于所述显示区域外围的边缘区域,所述驱动单元、发光单 元、第一写入单元、第二写入单元、时长调节单元均位于所述显示区域,所述信号选择单元设置在所述边缘区域。The display panel according to claim 11, wherein the display panel includes a display area and an edge area located at the periphery of the display area, the driving unit, the light emitting unit, the first writing unit, the second writing unit, The duration adjustment units are all located in the display area, and the signal selection unit is arranged in the edge area.
  13. 根据权利要求12所述的显示面板,其中,所述边缘区域包括走线区域和空白区域;The display panel according to claim 12, wherein the edge area includes a wiring area and a blank area;
    所述信号选择单元设置在所述空白区域。The signal selection unit is arranged in the blank area.
  14. 根据权利要求12所述的显示面板,其中,所述像素电路还包括复位单元,所述复位单元用于将所述驱动单元的第一节点以及所述时长调节单元的第一节点的电压调节至参考电压,所述复位单元设置在所述显示区域。The display panel of claim 12, wherein the pixel circuit further includes a reset unit configured to adjust voltages of the first node of the driving unit and the first node of the duration adjustment unit to Reference voltage, the reset unit is provided in the display area.
  15. 根据权利要求11至14任一项所述的显示面板,其中,所述显示面板为微发光二极管显示面板或有机发光二极管显示面板。The display panel according to any one of claims 11 to 14, wherein the display panel is a micro-light-emitting diode display panel or an organic light-emitting diode display panel.
PCT/CN2022/138783 2022-06-30 2022-12-13 Pixel circuit and display panel WO2024001065A1 (en)

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CN115019722A (en) * 2022-06-30 2022-09-06 上海闻泰电子科技有限公司 Pixel circuit and display panel

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