WO2023279832A1 - 微带耦合器、pcb板、射频系统和通信设备 - Google Patents

微带耦合器、pcb板、射频系统和通信设备 Download PDF

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Publication number
WO2023279832A1
WO2023279832A1 PCT/CN2022/091414 CN2022091414W WO2023279832A1 WO 2023279832 A1 WO2023279832 A1 WO 2023279832A1 CN 2022091414 W CN2022091414 W CN 2022091414W WO 2023279832 A1 WO2023279832 A1 WO 2023279832A1
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WIPO (PCT)
Prior art keywords
line
radio frequency
dielectric layer
groove
microstrip coupler
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PCT/CN2022/091414
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English (en)
French (fr)
Inventor
王国龙
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Oppo广东移动通信有限公司
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Publication of WO2023279832A1 publication Critical patent/WO2023279832A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/403—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency
    • H04B1/405—Circuits using the same oscillator for generating both the transmitter frequency and the receiver local oscillator frequency with multiple discrete channels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04W—WIRELESS COMMUNICATION NETWORKS
    • H04W88/00—Devices specially adapted for wireless communication networks, e.g. terminals, base stations or access point devices
    • H04W88/02—Terminal devices
    • H04W88/06—Terminal devices adapted for operation in multiple networks or having at least two operational modes, e.g. multi-mode terminals
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components

Definitions

  • the present application relates to the field of radio frequency technology, in particular to a microstrip coupler, a PCB board, a radio frequency system and communication equipment.
  • 5G mobile communication technology has gradually begun to be applied to electronic devices.
  • the communication frequency of 5G mobile communication technology is higher than that of 4G mobile communication technology.
  • couplers can be set up in radio frequency systems for signal isolation, separation and mixing, such as power monitoring, source output power stabilization, signal source isolation, transmission and reflection frequency sweep tests, etc.
  • the coupling function on the radio frequency system is realized by using independent coupling components arranged on the PCB, however, the cost of the independent coupling components is high and the space occupied is large.
  • a microstrip coupler a PCB board, a radio frequency system and a communication device are provided.
  • An embodiment of the present application provides a microstrip coupler, including:
  • the first dielectric layer is arranged on the ground layer, the upper surface of the first dielectric layer is provided with a first groove, and the area of the upper surface of the first dielectric layer other than the first groove is a grounding layer. area;
  • a radio frequency secondary line is arranged in the first groove, and the coupling end of the radio frequency secondary line is used to output a coupling signal;
  • the second dielectric layer is arranged on the first dielectric layer, the upper surface of the second dielectric layer is provided with a second groove, and the upper surface of the second dielectric layer is except for the second groove is the grounding area;
  • the radio frequency main line is arranged in the second groove, the input end of the radio frequency main line is used for connecting with the transmitting module, and the output end of the radio frequency main line is used for connecting with the antenna;
  • the projection line of the main radio frequency line on the first dielectric layer does not completely coincide with the auxiliary radio frequency line, so that the auxiliary radio frequency line is coupled with the main radio frequency line to form the coupled signal.
  • An embodiment of the present application provides a PCB board, including the aforementioned microstrip coupler.
  • An embodiment of the present application provides a radio frequency system, including:
  • a radio frequency transceiver configured with a transmit port for transmitting radio frequency signals and a feedback port for power detection
  • a transmitting module connected to the transmitting port, for receiving the radio frequency signal, and amplifying and filtering the received radio frequency signal;
  • the aforementioned microstrip coupler wherein the input end of the radio frequency main line is connected to the transmitting module, and the coupling end of the radio frequency secondary line is connected to the feedback end of the radio frequency transceiver for transmitting the coupled signal to said radio frequency transceiver;
  • the antenna, and the output end of the radio frequency main line, are used to radiate the radio frequency signal transmitted through the microstrip coupler.
  • An embodiment of the present application provides a communication device, including: the aforementioned radio frequency system.
  • Fig. 1 is a schematic cross-sectional view of a microstrip coupler according to an embodiment
  • Fig. 2 is one of top view schematic diagrams of each layered structure of the microstrip coupler of an embodiment, wherein, (a) is the top view of the second dielectric layer, (b) is the top view of the first dielectric layer, (c) is the ground layer top view;
  • Fig. 3 is the second schematic top view of each layered structure of the microstrip coupler in an embodiment, wherein (a) is a top view of the second dielectric layer, (b) is a top view of the first dielectric layer, and (c) is grounded layer top view;
  • Fig. 4 is the third schematic top view of each layered structure of the microstrip coupler according to an embodiment, wherein (a) is a top view of the second dielectric layer, (b) is a top view of the first dielectric layer, and (c) is grounded layer top view;
  • Fig. 5 is the simulation figure of the S parameter curve that the intersection angle of the microstrip coupler among Fig. 4 is 15 degrees;
  • Fig. 6 is the simulation figure of the S parameter curve that the intersection angle of the microstrip coupler among Fig. 4 is 30 degrees;
  • Fig. 7 is the fourth schematic top view of each layered structure of the microstrip coupler in an embodiment, wherein (a) is a top view of the second dielectric layer, (b) is a top view of the first dielectric layer, and (c) is grounded layer top view;
  • Fig. 8 is the fifth schematic top view of each layered structure of the microstrip coupler in an embodiment, wherein (a) is a top view of the second dielectric layer, (b) is a top view of the first dielectric layer, and (c) is grounded layer top view;
  • FIG. 9 is a schematic cross-sectional view of a microstrip coupler in another embodiment.
  • Fig. 10 is the simulation diagram of the S parameter curve of the microstrip coupler in Fig. 9;
  • Fig. 11 is a schematic cross-sectional view of a microstrip coupler in another embodiment
  • FIG. 12 is a schematic cross-sectional view of a microstrip coupler in yet another embodiment
  • Fig. 13 is a simulation diagram of the S parameter curve of the microstrip coupler in Fig. 11;
  • Fig. 14 is a schematic cross-sectional view of a microstrip coupler according to another embodiment
  • Fig. 15 is a structural block diagram of a radio frequency system of an embodiment
  • Fig. 16 is a structural block diagram of a radio frequency system according to another embodiment.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as “first” and “second” may explicitly or implicitly include at least one of these features.
  • plural means at least two, such as two, three, etc., unless otherwise specifically defined.
  • severeal means at least one, such as one, two, etc., unless otherwise specifically defined.
  • the microstrip coupler involved in the embodiment of the present application can be applied to a radio frequency system including a radio frequency transceiver, a transmitting module, and an antenna.
  • Microstrip coupler is a common microwave and millimeter wave component in microwave measurement and other microwave systems, which can be used for signal isolation, separation and mixing, such as power monitoring, source output power stabilization, signal source isolation, transmission and reflection scanning frequency test etc.
  • the microstrip coupler is a directional microwave power divider, and it is an indispensable part in the modern swept frequency reflectometer.
  • the embodiment of the present application provides a microstrip coupler.
  • the microstrip coupler provided in the embodiments of the present application may be formed on a PCB with multiple layers.
  • the microstrip coupler includes a radio frequency secondary line 101 , a radio frequency main line 102 , and a ground layer 110 , a first dielectric layer 120 and a second dielectric layer 130 which are sequentially stacked.
  • the radio frequency secondary line 101 and the radio frequency main line 102 may be strip wires (signal lines).
  • the ground layer 110 , the first dielectric layer 120 and the second dielectric layer 130 can respectively serve as a layer of a multi-layer PCB board.
  • Each board layer may include a PCB dielectric substrate and metal, such as copper foil, disposed on the PCB dielectric substrate.
  • the ground layer 110 may include a PCB dielectric substrate and metal disposed on the PCB dielectric substrate, wherein the metal disposed on the PCB dielectric substrate may form the ground layer 110 .
  • the first dielectric layer 120 is disposed on the ground layer 110 , and the upper surface of the first dielectric layer 120 is provided with a first groove 121 , and the area of the upper surface of the first dielectric layer 120 except the first groove 121 is a grounding area.
  • the first groove 121 may be provided on the upper surface layer of the first dielectric layer 120 , that is, the first groove 121 does not penetrate through the first dielectric layer 120 .
  • the upper surface of the first dielectric layer 120 may include a first groove 121 area and a grounding area 122 . That is to say, the upper surface layer of the first dielectric layer 120 is the grounding area 122 except for the area of the first groove 121 .
  • the first groove 121 is formed by removing metal in the area of the first groove 121 .
  • the first groove 121 may extend to two opposite ends of the first dielectric layer 120 , that is, grounding areas 122 are respectively provided on both sides of the first groove 121 .
  • the first groove 121 may also be spaced apart from any end of the first dielectric layer 120 , and grounding areas 122 are respectively arranged on four sides of the first groove 121 .
  • the first groove 121 may be set in the central area of the first dielectric layer 120 , and it is spaced apart from all ends of the first dielectric layer 120 . It should be noted that, in the embodiment of the present application, the location of the first groove 121 in the first dielectric layer 120 and the size of the first groove 121 are not further limited.
  • the second dielectric layer 130 is arranged on the first dielectric layer 120, and the upper surface layer of the second dielectric layer 130 is provided with a second groove 131 corresponding to the first groove 121.
  • the upper surface layer of the second dielectric layer 130 except the second The area outside the two grooves 131 is the grounding area 132 .
  • the structures of the first dielectric layer 120 and the second dielectric layer 130 may be the same or different.
  • the second dielectric layer 130 is located directly above the first dielectric layer 120, wherein the first groove 121 and the second groove 131 are stacked on the ground layer 110, the first dielectric layer 120, and the second dielectric layer 130 directions overlap at least partially.
  • the main radio frequency line 102 is disposed in the second groove 131 of the second dielectric layer 130 .
  • the input end of radio frequency main line 102 is used for connecting with transmitting module
  • the output end of radio frequency main line 102 is used for connecting with antenna
  • radio frequency main line 102 can be used for transmitting the radio frequency signal outputted by transmitting module to antenna, and radiates into the air by this nature .
  • the radio frequency secondary line 101 is arranged in the first groove 121 of the first dielectric layer 120, and the projection line 102' of the radio frequency main line 102 projected on the first dielectric layer 120 does not completely overlap with the radio frequency secondary line 101, so that the radio frequency secondary line 101 is coupled with the radio frequency main line 102 to form a coupled signal.
  • the coupled signal can be used to detect power information of the radio frequency signal transmitted by the radio frequency main line 102 .
  • the projected line 102' of the radio frequency main line 102 on the first dielectric layer 120 does not completely coincide with the radio frequency auxiliary line 101. It can be understood that the radio frequency main line 102 is not arranged directly above the radio frequency auxiliary line 101, or that the radio frequency main line 102 It does not completely coincide with the radio frequency secondary line 101 in the stacking direction.
  • the projection line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 does not coincide with the radio frequency sub-line 101, or the projection of the main radio frequency line 102 projected on the first dielectric layer 120
  • the line 102' partially overlaps with the radio frequency secondary line 101.
  • the projection direction of the orthographic projection is set perpendicular to the first medium layer.
  • the projected line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 does not completely coincide with the radio frequency secondary line 101. It can also be understood that the projected line 102' of the radio frequency secondary line 101 projected on the second dielectric layer 130 does not coincide with the main radio frequency line 102. completely coincident.
  • the radio frequency main line 102 by disposing the radio frequency secondary line 101 in the first groove 121 of the first dielectric layer 120, the radio frequency main line 102 is disposed in the second groove 131 of the second dielectric layer 130 Among them, the radio frequency main line 102 can transmit the radio frequency signal output by the transmitting module to the antenna, and at the same time, the orthographic projection of the radio frequency main line 102 on the first dielectric layer 120 does not completely coincide with the radio frequency secondary line 101 .
  • the radio frequency secondary line 101 can be coupled with the radio frequency main line 102 provided in the second groove 131 based on the coupling space provided by the first groove 121 and the second groove 131 to form a coupling signal, and the generated coupling signal Output to the feedback port of the radio frequency transceiver for detecting power information through the coupled end of the radio frequency secondary line 101 to realize the detection of the output power of the radio frequency signal output by the transmitting module.
  • the microstrip coupler can be integrated in the PCB board, which can avoid installing a single coupling component on the PCB board (for example, coupling components of waveguide, coaxial line, strip line, etc.), and can also simplify
  • the matching discrete device with the coupling component simplifies the wiring arrangement of the PCB board, saves the occupied area of the PCB, and reduces the cost.
  • the microstrip coupler is suitable for coupling radio frequency signals of multiple frequency bands.
  • the bottom of the first groove 121 in the first dielectric layer 120 is the dielectric substrate of the PCB, wherein the radio frequency sub-line 101 can be formed on the dielectric substrate of the PCB by printing or vapor deposition.
  • the function of carrying the radio frequency sub-line 101 can be played, and the interference to the coupling between the radio frequency main line 102 and the radio frequency sub-line 101 can also be avoided.
  • the first dielectric layer 120 can also be used to install other radio frequency devices in the radio frequency system, and the ground terminal of the radio frequency device installed on the first dielectric layer 120 can be connected with the grounding area 122 of the upper surface layer of the first dielectric layer 120, so that the The grounding area 122 can not only protect the radio frequency secondary line 101 located in the first groove 121 from interference, but also provide a reference ground for other radio frequency devices.
  • the groove bottom of the second groove 131 in the second dielectric layer 130 is the dielectric base material of the PCB board, wherein the main radio frequency line 102 can be formed on the dielectric base material of the PCB board by means of printing and vapor deposition. Material, can play the function of carrying the radio frequency main line 102.
  • the first dielectric layer 120 can also be used to install other radio frequency devices in the radio frequency system, and the ground terminal of the radio frequency device installed on the second dielectric layer 130 can be connected with the grounding area 132 on the upper surface of the second dielectric layer 130, This makes the grounding area 132 not only free from interference with the main radio frequency line 102 located in the second groove 131 , but also provides a reference ground for other radio frequency devices.
  • Figure (a) is a top view of the second dielectric layer
  • Figure (b) is a top view of the first dielectric layer
  • Figure (c) is a ground layer. top view.
  • the projected line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 is parallel to the secondary radio frequency line 101.
  • the first groove 121 and the second groove 131 are equal in size, and the second groove 131 is located directly above the first groove 121 as an example. illustrate.
  • the size of the second groove 131 and the first groove 121 may be equal, wherein the second groove 131 may be located directly above the first groove 121 .
  • the geometric center of the groove bottom of the first groove 121 may be coaxially arranged with the geometric center of the groove bottom of the second groove 131 .
  • the radio frequency main line 102 and the radio frequency secondary line 101 are arranged in parallel, and do not overlap in the stacking direction.
  • the first groove 121 and the second groove 131 can also be Partially staggered design. It should be noted that, in the embodiment of the present application, the relative positional relationship between the first groove 121 and the second groove 131 is not further limited.
  • the main radio frequency line 102 and the auxiliary radio frequency line 101 are arranged in parallel and do not overlap in the stacking direction.
  • the microstrip coupler can be applied It is suitable for the coupling of radio frequency signals in different frequency bands, and can ensure that the coupling degree of its microstrip coupler can be kept between -25--30.
  • the relative distance can be understood as the spatial straight-line distance between the radio frequency main line 102 and the radio frequency sub line 101, and can also be understood as the distance between the projected line 102' of the radio frequency main line 102 projected on the first dielectric layer 120 and the radio frequency sub line 101. straight-line distance.
  • the projected line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 intersects with the radio frequency sub line 101, wherein, the angle of the formed intersection angle ⁇ is coupled with the microstrip
  • the coupling frequency band of the device is positively correlated.
  • the radio frequency main line 102 may include a main line 1021 and a first connection line 1022 and a second connection line 1023 arranged at two ends of the main line 1021 .
  • the first connection line 1022 can be used as an input end of the radio frequency main line 102 for connecting with the transmission module and for receiving the radio frequency signal output by the transmission module.
  • the second connection line 1023 can be used as the output end of the radio frequency main line 102 for connecting with the antenna, so as to radiate the radio frequency signal transmitted by the radio frequency main line 102 to free space through the antenna.
  • the first connection line 1022, the main line 1021, and the second connection line 1023 may be located on the same straight line.
  • the first connecting line 1022, the main line 1021, and the second connecting line 1023 may not be on the same straight line, and may form a bent line.
  • the angle ⁇ 1 between the first connection line 1022 and the main line 1021 is an obtuse angle less than 180 degrees
  • the angle ⁇ 2 between the second connection line 1023 and the main line 1021 is an obtuse angle less than 180 degrees, so as to facilitate the connection with the external transmitting module , Antenna connection.
  • the magnitudes of the included angle ⁇ 1 and the included angle ⁇ 2 may be equal or unequal.
  • the radio frequency sub-line 101 includes a sub-line 1011 and a third connecting line 1012 and a fourth connecting line 1013 disposed at two ends of the sub-line 1011 .
  • the third connection line 1012 can be used as the ground terminal of the radio frequency sub-line 101, and can be connected to the ground area 132 of the second dielectric layer 130 through a hole
  • the fourth connection line 1013 can be used as a coupling end of the radio frequency sub-line 101 for connecting with the radio frequency sub-line 101.
  • the feedback terminal of the radio frequency transceiver is connected to transmit the coupled coupling signal to the radio frequency transceiver, so as to realize the power detection of the radio frequency signal.
  • the third connection line 1012, the secondary line 1011, and the fourth connection line 1013 may be located on the same straight line.
  • the third connection line 1012, the secondary line 1011, and the fourth connection line 1013 may not be on the same straight line, and may form a bent line.
  • the included angle ⁇ 1 between the third connecting line 1012 and the auxiliary line 1011 is an obtuse angle less than 180 degrees
  • the included angle ⁇ 2 between the fourth connecting line 1013 and the auxiliary line 1011 is an obtuse angle less than 180 degrees, so as to facilitate the connection with the radio frequency Transceiver connection.
  • intersection angle ⁇ can be understood as the intersection angle ⁇ between the projection line of the main line 1021 and the secondary line 1011 , and the intersection angle ⁇ is an acute angle.
  • the simulation data of the corresponding coupling degree can be obtained, as shown in Table 1.
  • S12 refers to the insertion loss value of RFIN to the output terminal RFOUT of the radio frequency main line 102
  • S13 refers to the isolation degree of the input terminal RFIN of the radio frequency main line 102 to the load end of the radio frequency secondary line 101
  • S14 refers to the isolation from the input end RFIN of the radio frequency main line 102 to the coupling end FBRX OUT of the radio frequency auxiliary line 101.
  • Table 1 shows the coupling degree of microstrip coupler coupling RF signals in different frequency ranges
  • the microstrip coupler shown in Figure 4 is suitable for coupling radio frequency signals in the 1500-2700MHz frequency band.
  • Table 2 shows the coupling degree of microstrip coupler coupling RF signals in different frequency ranges
  • the microstrip coupler shown in Figure 5 is suitable for coupling radio frequency signals in the 3300-4200MHz frequency band.
  • the degree of the crossing angle ⁇ formed by it is positively related to the frequency band of the radio frequency signal that the microstrip coupler can couple. relevant. That is, the larger the crossing angle ⁇ is, the higher the frequency band of the radio frequency signal that the microstrip coupler can couple.
  • the angle of the crossing angle ⁇ the frequency range of the radio frequency signal that the microstrip coupler can couple can be adjusted correspondingly, so as to realize the coupling of multi-band radio frequency signals, and can ensure that the coupling degree of the microstrip coupler is maintained within the preset range (for example, -25--30).
  • the projected line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 crosses the secondary radio frequency line 101.
  • the projection line of the main line 1021 on the first dielectric layer 120 crosses the secondary line 1011, and at the same time, the projection line 102' of the first connecting line 1022 on the first dielectric layer 120 is parallel to the third connecting line 1012
  • the projection line 102 ′ of the second connecting line 1023 projected on the first dielectric layer 120 is parallel to the fourth connecting line 1013 .
  • the connecting lines at both ends of the main radio frequency line 102 and the auxiliary radio frequency line 101 are arranged parallel to each other at intervals, and the main line 1021 and the auxiliary line 1011 are intersected in space.
  • the angle of the intersection angle ⁇ the distance between the first connecting line 1022 and the third connecting line 1012, or the distance between the second connecting line 1023 and the fourth connecting line 1013, the microstrip coupling can be adjusted correspondingly.
  • the positions of the first connection line 1022 and the second connection line 1023 in the radio frequency main line 102 may be exchanged.
  • the first connecting line 1022 can be arranged in parallel with the fourth connecting line 1013 of the radio frequency auxiliary line 101 on the same side of the main line 1021 or the auxiliary line 1011
  • the second connecting line 1023 can be connected with the third connecting line of the radio frequency auxiliary line 101.
  • 1012 are arranged in parallel on the same side of the main line 1021 or the secondary line 1011.
  • the positions of the third connection line 1012 and the fourth connection line 1013 in the radio frequency secondary line 101 may also be exchanged.
  • the connecting lines are arranged parallel to each other, and by adjusting the angle of intersection angle ⁇ , the first connecting line 1022 and the secondary line 1011 are arranged in parallel.
  • the distance between the third connection line 1012, or the distance between the second connection line 1023 and the fourth connection line 1013, can be correspondingly adjusted to the frequency band range of the radio frequency signal that the microstrip coupler can couple, so as to realize the multi-band radio frequency Signal coupling, and can ensure that the coupling degree of its microstrip coupler is maintained within a preset range (for example, -25--30).
  • the projected line 102' of the main radio frequency line 102 projected on the first dielectric layer 120 crosses the secondary radio frequency line 101.
  • the main line 1021 is positively projected on the projection line 102' of the first dielectric layer 120 and the sub-line 1011 is intersected, and one of the first connection line 1022 and the second connection line 1023 is positively projected on the projection line 102 ' and one of the third connection line 1012 and the fourth connection line 1013 is arranged in parallel.
  • the projection line 102' of the first connection line 1022 on the first dielectric layer 120 coincides with the third connection line 1012
  • the projection line 102' of the second connection on the first dielectric layer 120 coincides with
  • the fourth connection lines 1013 are arranged in parallel at intervals.
  • the projection line 102' of the second connection line 1023 on the first medium layer 120 coincides with the fourth connection line 1013
  • the projection line 102' of the first connection on the first medium layer 120 coincides with the projection line 102' of the first medium layer 120.
  • the three connection lines 1012 are arranged in parallel at intervals.
  • the range of the cross angle between the projected line 102' of the main line 1021 projected on the first medium layer 120 and the sub-line 1011 can be 30 degrees to 60 degrees, and the range of the cross angle ⁇ can be the range of the aforementioned implementation.
  • the range of the cross angle ⁇ can be twice the intersection angle ⁇ .
  • the radio frequency main line 102 and the radio frequency auxiliary line 101 intersect in space, that is, the projected line 102 ′ of the radio frequency main line 102 is projected on the first dielectric layer 120 and the radio frequency auxiliary line 101 has an intersection angle ⁇ degree, which can reduce
  • the degree of coupling between the two radio frequency main lines 102 and the radio frequency secondary line 101 is based on the frequency band requirement of the actual radio frequency signal, and the microstrip coupler of the required frequency band is obtained by adjusting the intersection angle ⁇ degrees.
  • the microstrip coupler further includes: a third dielectric layer 140 .
  • the third dielectric layer 140 is disposed between the ground layer 110 and the first dielectric layer 120 , and the third dielectric layer 140 is provided with a first hollow groove 141 corresponding to the first groove 121 .
  • the first hollow groove 141 can be understood as the groove runs through the entire third dielectric layer 140 .
  • the shape and size of the first hollow groove 141 may be the same as at least one of the first groove 121 and the second groove 131 in the foregoing embodiments, or may be different from each other.
  • the positions of the first hollow groove 141, the first groove 121, and the second groove 131 can be set correspondingly, that is, the first groove 121 is arranged directly above the first hollow groove 141, and the second groove 131 is arranged on the second groove. directly above a groove 121 .
  • the geometric centers of each groove are located on the same axis.
  • the projection line 102' of the main radio frequency line 102 projected on the first dielectric layer 110 is set in parallel with the radio frequency secondary line 101 as an example, as shown in Figure 10. From the simulation diagram shown, the simulation data of the corresponding coupling degree can be obtained, as shown in Table 3.
  • Table 3 shows the coupling degree of microstrip coupler coupling RF signals in different frequency ranges
  • microstrip coupler shown in Figure 9 can be used in the 690-960MHz frequency band.
  • the distance between the radio frequency secondary line 101 and the ground layer 110 can be increased, that is, it can be increased.
  • the distance between the coupling end FBRX and the ground layer 110 can further increase the coupling degree of the microstrip coupler, so that the coupling degree of the microstrip coupler can be maintained within a preset range.
  • the microstrip coupler further includes: a fourth dielectric layer 150, disposed between the first dielectric layer 120 and the second dielectric layer 130, the fourth The dielectric layer 150 defines a second hollow groove 151 , and the second hollow groove 151 communicates with the first groove 121 .
  • the shape and size of the second hollow groove 151 may be the same as at least one of the first groove 121 and the second groove 131 in the foregoing embodiments, or may be different from each other.
  • the positions of the first hollow groove 141, the first groove 121, the second hollow groove 151, and the second groove 131 can be set correspondingly, that is, the first groove 121 is arranged directly above the first hollow groove 141, and the second The hollow groove 151 is disposed directly above the first groove 121 , and the second groove 131 is disposed directly above the second hollow groove 151 .
  • the geometric centers of each groove are located on the same axis.
  • the projection line 102' of the main radio frequency line 102 projected on the first dielectric layer 110 is set in parallel with the radio frequency sub-line 101 as an example, and it can be obtained as shown in Figure 13 From the simulation diagram shown, the simulation data of the corresponding coupling degree can be obtained, as shown in Table 4.
  • Table 4 shows the coupling degree of microstrip couplers coupling RF signals in different frequency ranges
  • microstrip coupler shown in Figure 10 can be used in the 1500-2700MHz frequency band.
  • the distance between the radio frequency main line 102 and the radio frequency secondary line 101 can be increased, that is, it can be increased.
  • the distance between the radio frequency input terminal RFIN and the coupling terminal FBRX is to reduce the coupling degree of the microstrip coupler so that the coupling degree of the microstrip coupler can be maintained within a preset range.
  • the first dielectric layer 120 is provided with a first via hole
  • the second dielectric layer 130 is provided with a second via hole
  • the microstrip coupler further includes: Load resistor 160 on 130.
  • the first end of the load resistor 160 is connected to the radio frequency sub-line 101
  • the second end of the load resistor 160 is connected to the grounding area 132 of the second dielectric layer 130 through the first via hole and the second via hole.
  • the load resistor 160 may serve as a communication load of the microstrip coupler.
  • the size of the load resistor 160 can be set to 50 ohms.
  • an adjustable communication load can also be realized by providing one or more tunable impedance elements such as tunable or variable capacitors, inductors or resistors.
  • the radio frequency signal can enter the microstrip coupler through the first connection line 1022 of the radio frequency main line 102, such as the RFIN port, and the radio frequency signal can be transmitted to the second connection terminal through the radio frequency main line 102, such as the output port RFOUT, and output .
  • the radio frequency signal transmitted on the radio frequency main line 102 can also be coupled with the radio frequency secondary line 101 to output the coupling signal through the coupling terminal FBRX.
  • the third connection line 1012 in the radio frequency secondary line 101 is connected to The ground area 132 of the second dielectric layer 130 is connected.
  • a load resistor 160 at the first connection end (that is, the isolation end) of the radio frequency secondary line 101, it can be used to adjust the communication load of its microstrip coupler, so that it is compatible with the PCB board. other RF devices for impedance matching.
  • An embodiment of the present application further provides a PCB board, the PCB board including the microstrip coupler in any one of the foregoing embodiments.
  • the number of microstrip couplers integrated on the PCB may be one or two.
  • the coupling of radio frequency signals of multiple different frequency bands can be realized, so as to detect the power information of the radio frequency signals of multiple different frequency bands.
  • the embodiment of the present application also provides a radio frequency system, including a radio frequency transceiver 20 , a transmitting module 30 , the microstrip coupler 10 in any of the foregoing embodiments, and an antenna 40 .
  • the radio frequency transceiver 20 and the transmitting module 30 are respectively arranged on the side of the ground layer 110 away from the first dielectric layer 120 .
  • the radio frequency transceiver 20 is configured with a transmission port for transmitting radio frequency signals and a feedback port for power detection.
  • the transmitting module 30 is connected to the transmitting port, and is used for receiving radio frequency signals, and amplifying and filtering the received radio frequency signals.
  • the transmitting module 30 may be a multi-band multi-mode power amplifier (Multi-band multi-mode power amplifier, MMPA) with multiple built-in amplifying units.
  • Each port configured by the transmitting module 30 can be understood as a radio frequency pin of a multi-frequency multi-mode amplifier.
  • the transmitting module 30 can also understand a power amplifier module integrated duplexer (Power amplifier module integrated duplexer, PA Mid), or it can be a PA Mid with a built-in low noise amplifier, that is, L-PA Mid.
  • Each port configured on the transmitting module 30 can be understood as a radio frequency pin of the PA Mid.
  • the input end of the RF main line 102 in the microstrip coupler 10 is connected to the transmitting module 30 , and the coupling end of the RF secondary line 101 is connected to the feedback end of the RF transceiver 20 for transmitting the coupled signal to the RF transceiver 20 .
  • the first groove 121 of the radio frequency main line 102 and the second groove 131 of the radio frequency secondary line 101 can provide a coupling space for the coupling of the radio frequency main line 102 and the radio frequency secondary line 101.
  • the The radio frequency signal can be transmitted from the input end of the radio frequency main line 102 to the output end of the radio frequency main line 102 , and radiated to free space through the antenna 40 .
  • a part of the radio frequency signal transmitted on the radio frequency main line 102 will be coupled to the radio frequency sub line 101, and due to the interference or superposition of waves, the radio frequency signal will only be transmitted along one direction of the radio frequency sub line 101 (called “forward") , for example, the coupled end of the radio frequency secondary line 101, and transmit to the feedback port of the radio frequency transceiver 20 through the coupled end; and the other direction has almost no power transmission (called "reverse”) For example, the isolation of the radio frequency secondary line 101 end.
  • what is connected to the coupled end of the radio frequency secondary line 101 may also be a power detection module, configured to perform power detection on the coupled signal output from the coupled end.
  • the power detection module may be a power detection meter or the like.
  • the specific forms of the transmitting module 30 and the power detecting module in the radio frequency system are not further limited.
  • the radio frequency secondary line 101 can be based on the coupling space provided by the first groove and the second groove and the coupling space provided in the second groove
  • the radio frequency main line 102 is coupled to form a coupled signal, and the generated coupled signal is output to the feedback port used to detect power information in the radio frequency transceiver through the coupled end of the radio frequency secondary line 101 to realize the output of the radio frequency signal output by the transmitting module power detection.
  • a single coupling component on the PCB for example, coupling components of waveguide, coaxial line, stripline, etc.
  • the wiring layout of the PCB board is simplified, the occupied area of the PCB is saved, and the cost is reduced. Simultaneously, by setting the relative positions of the radio frequency main line 102 and the radio frequency sub line 101 in the corresponding groove, for example, the projection line of the radio frequency main line 102 being projected on the first medium layer does not completely coincide with the radio frequency sub line 101, and the microstrip can also be made.
  • the coupler is suitable for coupling radio frequency signals of multiple frequency bands.
  • the radio frequency system may further include a receiving module 50, a filtering module 60, and the like.
  • the receiving module 50 can support the receiving and processing of radio frequency signals of multiple different frequency bands, for example, the receiving module 50 can include a plurality of low noise amplifiers, filters, radio frequency switches and the like.
  • the number of microstrip couplers 10 included in the radio frequency system can be set according to actual needs, for example, one microstrip coupler 10 can be correspondingly provided on the transmission path of each antenna 40 .
  • the filtering module 60 can be arranged on the transmitting path and the receiving path of the radio frequency signal.
  • the filtering module can be respectively connected with the transmitting module 20 , the receiving module 50 and the microstrip coupler 10 to support filtering processing of radio frequency signals in various frequency bands to filter spurious waves in various frequency bands.
  • the radio frequency system provided with the microstrip coupler in any of the foregoing embodiments can be applied to a communication device with a wireless communication function
  • the communication device can be a handheld device, a vehicle-mounted device, a wearable device, a computing device Or other processing equipment connected to a wireless modem, and various forms of user equipment (User Equipment, UE) (eg, mobile phone), mobile station (Mobile Station, MS) and so on.
  • UE User Equipment
  • UE user equipment
  • MS mobile station
  • Network devices may include base stations, access points, and the like.

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Abstract

一种微带耦合器，微带耦合器包括：接地层(110)；第一介质层(120)，设置在接地层(110)上，第一介质层(120)的上表层开设有第一凹槽(121)，第一介质层(120)的上表层除第一凹槽(121)以外的区域为接地区；射频副线(101)，设置在第一凹槽(121)中，射频副线(101)的耦合端用于输出耦合信号；第二介质层(130)，设置在第一介质层(120)上，第二介质层(130)的上表层开设有第二凹槽(131)，第二介质层(130)的上表层除第二凹槽(131)以外的区域为接地区；射频主线(102)，设置在第二凹槽(131)中，射频主线(102)的输入端用于与发射模块连接，射频主线(102)的输出端用于与天线连接；其中，射频主线(102)正投影在第一介质层(120)的投影线(102')与射频副线(101)不完全重合。

Description

微带耦合器、PCB板、射频系统和通信设备
相关申请的交叉引用
本申请要求于2021年07月08日提交中国专利局、申请号为2021215531494实用新型名称为“微带耦合器、PCB板、射频系统和通信设备”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及射频技术领域，特别是涉及一种微带耦合器、PCB板、射频系统和通信设备。
背景技术
随着技术的发展和进步，5G移动通信技术逐渐开始应用于电子设备。5G移动通信技术通信频率相比于4G移动通信技术的频率更高。一般可在射频系统中设置耦合器以用于信号的隔离、分离和混合，如功率的监测、源输出功率稳幅、信号源隔离、传输和反射的扫频测试等。
一般，射频系统上的耦合功能是通过采用设置在PCB板上的独立耦合元器件来实现的，但是，其独立耦合元器件的成本高、占用空间大。
发明内容
根据本申请的各种实施例，提供一种微带耦合器、PCB板、射频系统和通信设备。
本申请实施例提供一种微带耦合器，包括：
接地层；
第一介质层，设置在所述接地层上，所述第一介质层的上表层开设有第一凹槽，所述第一介质层的上表层除所述第一凹槽以外的区域为接地区；
射频副线，设置在所述第一凹槽中，所述射频副线的耦合端用于输出耦合信号；
第二介质层，设置在所述第一介质层上，所述第二介质层的上表层开设有第二凹槽，所述第二介质层的上表层除所述第二凹槽以外的区域为接地区；
射频主线，设置在所述第二凹槽中，所述射频主线的输入端用于与发射模块连接，所述射频主线的输出端用于与天线连接；其中，
所述射频主线正投影在所述第一介质层的投影线与所述射频副线不完全重合，以使所述射频副线与所述射频主线耦合以形成所述耦合信号。
本申请实施例提供一种PCB板，包括前述的微带耦合器。
本申请实施例提供一种射频系统，包括：
射频收发器，被配置有用于发射射频信号的发射端口以及用于功率检测的反馈端口；
发射模块，与所述发射端口连接，用于接收所述射频信号，并对接收的所述射频信号进行放大、滤波处理；
前述的微带耦合器，其中，所述射频主线的输入端与所述发射模块连接，所述射频副线的耦合端与所述射频收发器的反馈端连接，用于将所述耦合信号传输至所述射频收发器；
天线，与所述射频主线的输出端，用于辐射经所述微带耦合器传输的所述射频信号。
本申请实施例提供一种通信设备，包括：前述的射频系统。
本申请的一个或多个实施例的细节在下面的附图和描述中提出。本申请的其他特征、目的和优点将从说明书、附图以及权利要求书变得明显。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为一实施例的微带耦合器的截面示意图；
图2为一实施例的微带耦合器各层状结构的俯视示意图之一，其中，(a)为第二介质层的俯视图，(b)为第一介质层的俯视图，(c)为接地层的俯视图；
图3为一实施例的微带耦合器各层状结构的俯视示意图之二，其中，(a)为第二介质层的俯视图，(b)为第一介质层的俯视图，(c)为接地层的俯视图；
图4为一实施例的微带耦合器各层状结构的俯视示意图之三，其中，(a)为第二介质层的俯视图，(b)为第一介质层的俯视图，(c)为接地层的俯视图；
图5为图4中微带耦合器的交叉角度为15度的S参数曲线的仿真图；
图6为图4中微带耦合器的交叉角度为30度的S参数曲线的仿真图；
图7为一实施例的微带耦合器各层状结构的俯视示意图之四，其中，(a)为第二介质层的俯视图，(b)为第一介质层的俯视图，(c)为接地层的俯视图；
图8为一实施例的微带耦合器各层状结构的俯视示意图之五，其中，(a)为第二介质层的俯视图，(b)为第一介质层的俯视图，(c)为接地层的俯视图；
图9为另一实施例的微带耦合器的截面示意图；
图10为图9中微带耦合器的S参数曲线的仿真图；
图11为又一实施例的微带耦合器的截面示意图；
图12为再一实施例的微带耦合器的截面示意图；
图13为图11中微带耦合器的S参数曲线的仿真图；
图14为还一实施例的微带耦合器的截面示意图；
图15为一实施例的射频系统的结构框图；
图16为另一实施例的射频系统的结构框图。
具体实施方式
为了便于理解本申请，为使本申请的上述目的、特征和优点能够更加明显易懂，下面结合附图对本申请的具体实施方式做详细的说明。在下面的描述中阐述了很多具体细节以便于充分理解本申请，附图中给出了本申请的较佳实施方式。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施方式。相反地，提供这些实施方式的目的是使对本申请的公开内容理解的更加透彻全面。本申请能够以很多不同于在此描述的其它方式来实施，本领域技术人员可以在不违背本申请内涵的情况下做类似改进，因此本申请不受下面公开的具体实施例的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。在本申请的描述中，“若干”的含义是至少一个，例如一个，两个等，除非另有明确具体的限定。
本申请实施例涉及的微带耦合器可以应用到包括射频收发器、发射模块以及天线的射频系统。微带耦合器是微波测量和其它微波系统中常见的微波和毫米波部件，可用于信号的隔离、分离和混合，如功率的监测、源输出功率稳幅、信号源隔离、传输和反射的扫频测试等。微带耦合器是一种有方向性的微波功率分配器，更是近代扫频反射计中不可缺 少的部件。
如图1和图2所示，本申请实施例提供一种微带耦合器。本申请实施例中提供的微带耦合器可形成在具有多层板层的PCB板上。在其中一个实施例中，微带耦合器包括射频副线101、射频主线102以及依次层叠设置的接地层110、第一介质层120和第二介质层130。其中，射频副线101、射频主线102可以为带状导线(信号线)。接地层110、第一介质层120和第二介质层130可分别作为多层PCB板的一板层。每一板层可包括PCB介质基材以及设置在PCB介质基材上的金属，例如，铜箔等。
接地层110可包括PCB介质基材以及设置在PCB介质基材上的金属，其中，设置在PCB介质基材上的金属可形成接地层110。
第一介质层120设置在接地层110上，且第一介质层120的上表层开设有第一凹槽121，第一介质层120的上表层除第一凹槽121以外的区域为接地区。其中，第一凹槽121可以开设在第一介质层120的上表层，也即，第一凹槽121未贯穿第一介质层120。第一介质层120的上表面可包括第一凹槽121区和接地区122。也即，第一介质层120的上表层除了第一凹槽121区，剩下的都是接地区122。其中，第一凹槽121是通过去除第一凹槽121区的金属而形成的。第一凹槽121可以延伸至第一介质层120相对设置的两个端部，也即，第一凹槽121的两侧分别设置有接地区122。可选的，第一凹槽121也可以与第一介质层120的任一端部间隔设置，以及，第一凹槽121的四周侧分别设置有接地区122。示例性的，第一凹槽121可以开设在第一介质层120的中心区域，其与第一介质层120的所有端部均间隔设置。需要说明的是，在本申请实施例中，第一凹槽121的开设在第一介质层120的位置，以及第一凹槽121的开槽尺寸大小，均不作进一步的限定。
第二介质层130，设置在第一介质层120上，第二介质层130的上表层开设有与第一凹槽121对应设置的第二凹槽131，第二介质层130的上表层除第二凹槽131以外的区域为接地区132。其中，第一介质层120和第二介质层130的结构可以相同，也可以不同。示例性的，第二介质层130位于第一介质层120的正上方，其中，第一凹槽121和第二凹槽131在接地层110、第一介质层120、第二介质层130的堆叠方向上至少部分重叠。
射频主线102，设置在第二介质层130的第二凹槽131中。其中，射频主线102的输入端用于与发射模块连接，射频主线102的输出端用于与天线连接，射频主线102可用于将发射模块输出的射频信号传输至天线，并通过该天性辐射到空中。射频副线101，设置在第一介质层120的第一凹槽121中，射频主线102正投影在第一介质层120的投影线102’与射频副线101不完全重合，以使射频副线101与射频主线102耦合以形成耦合信号。其中，耦合信号可用于检测射频主线102传输的射频信号的功率信息。射频主线102正投影在第一介质层120上的投影线102’与射频副线101不完全重合，可以理解为，射频主线102并不是设置在射频副线101的正上方，或，射频主线102与射频副线101在堆叠方向上不完全重合。不完全重合，可以理解为，射频主线102正投影在第一介质层120上的投影线102’与射频副线101不重合，或者是，射频主线102正投影在第一介质层120上的投影线102’与射频副线101部分重合。
需要注意的是，在本申请实施例中，正投影的投影方向与第一介质层垂直设置。射频主线102正投影在第一介质层120的投影线102’与射频副线101不完全重合也可以理解为射频副线101正投影在第二介质层130的投影线102’与射频主线102不完全重合。
在本申请实施例中的微带耦合器，通过将射频副线101设置在第一介质层120的第一凹槽121中，将射频主线102设置在第二介质层130的第二凹槽131中，其中，射频主线102可以将发射模块输出的射频信号传输至天线，同时，射频主线102在第一介质层120的正投影与射频副线101不完全重合。因此，射频副线101可以基于第一凹槽121、第二凹槽131提供的耦合空间与设置在第二凹槽131中的射频主线102进行耦合，以形成耦合信号，并将产生的耦合信号经射频副线101的耦合端输出至射频收发器中用于检测功率信息的反馈端 口以实现对发射模块输出的射频信号的输出功率的检测。这样，微带耦合器可集成在PCB板中，可以避免在PCB板上安装单颗的耦合元器件(例如，波导、同轴线、带状线等类型的耦合元器件)，同时还可以简化与该耦合元器件的配套的分立器件，简化了PCB板的走线排布，节约了PCB的占用面积，以及降低了成本。同时，通过设置射频主线102与射频副线101在对应凹槽中的相对位置，例如，射频主线102正投影在第一介质层120的投影线102’与射频副线101不完全重合，还可以使微带耦合器适用于耦合多频段的射频信号。
在其中一个实施例中，第一介质层120中第一凹槽121的槽底为PCB板的介质基材，其中，射频副线101可通过印制、蒸镀的方式形成在PCB板的介质基材上，可以起到承载射频副线101的功能，还可以避免对射频主线102与射频副线101之间耦合造成干扰。第一介质层120还可以用于安装射频系统中的其他射频器件，其安装在第一介质层120上的射频器件的接地端可与第一介质层120上表层的接地区122连接，使得该接地区122不仅可以包括其位于第一凹槽121中的射频副线101不受干扰，也可以给其他射频器件提供参考地。
在其中一个实施例中，第二介质层130中第二凹槽131的槽底为PCB板的介质基材，其中，射频主线102可通过印制、蒸镀的方式形成在PCB板的介质基材上，可以起到承载射频主线102的功能。同时，第一介质层120还可以用于安装射频系统中的其他射频器件，其安装在第二介质层130上的射频器件的接地端可与第二介质层130上表层的接地区132连接，使得该接地区132不仅可以包括其位于第二凹槽131中的射频主线102不受干扰，也可以给其他射频器件提供参考地。
请继续参考图2和图3，其中，图2和图3中，图(a)为第二介质层的俯视图，图(b)为第一介质层的俯视图，图(c)为接地层的俯视图。在其中一实施例中，射频主线102正投影在第一介质层120的投影线102’与射频副线101平行设置。为了便于说明，在本申请实施例中的各实施例中，以第一凹槽121与第二凹槽131的大小相等，且第二凹槽131位于第一凹槽121的正上方为例进行说明。第二凹槽131和第一凹槽121的大小可以相等，其中，第二凹槽131可位于第一凹槽121的正上方。也即，第一凹槽121的槽底几何中心可以与第二凹槽131的槽底几何中心同轴设置。其中，射频主线102与射频副线101平行设置，且在堆叠方向不重叠。可选的，在确保第一凹槽121和第二凹槽131提供的耦合空间能够使射频主线102与射频副线101能够耦合的前提下，第一凹槽121和第二凹槽131也可以部分错开设计。需要说明的是，在本申请实施例中，对第一凹槽121、第二凹槽131的相对位置关系不做进一步的限定。
在本申请实施例中，射频主线102与射频副线101平行设置，且在堆叠方向不重叠，通过调节射频主线102与射频副线101之间的相对距离，可以使得该微带耦合器能够适用于不同频段的射频信号的耦合，并能够保证其微带耦合器的耦合度能够保持在-25--30之间。其中，相对距离可以理解为射频主线102与射频副线101之间的空间直线距离，也可以理解为射频主线102正投影在第一介质层120的投影线102’与射频副线101之间的平面直线距离。
如图4所示，在其中一个实施例中，射频主线102正投影在第一介质层120的投影线102’与射频副线101交叉设置，其中，形成的交叉角θ的角度与微带耦合器的耦合频段正相关。具体的，射频主线102可包括主线1021以及设置在主线1021两端的第一连接线1022、第二连接线1023。其中，第一连接线1022可作为射频主线102的输入端，用于与发射模块连接，用于接收发射模块输出的射频信号。第二连接线1023可作为射频主线102的输出端，用于与天线连接，以将射频主线102传输的射频信号经天线辐射到自由空间。第一连接线1022、主线1021、第二连接线1023可以位于同一直线。可选的，第一连接线1022、主线1021、第二连接线1023也可以不再同一直线上，可以构成一弯折线。其中，第一连接线1022与主线1021之间的夹角β1为小于180度的钝角，第二连接线1023与主线1021之间的夹角β2为小于180度的钝角，以便于与外部发射模块、天线连接。其中，需要说明的是，夹角β1与夹 角β2的大小可以相等，也可以不相等。
射频副线101包括副线1011以及设置在副线1011两端的第三连接线1012、第四连接线1013。其中，第三连接线1012可作为射频副线101的接地端，可以经过孔与第二介质层130的接地区132连接，第四连接线1013可作为射频副线101的耦合端，用于与射频收发器的反馈端连接，以将耦合的耦合信号传输至射频收发器，以实现对射频信号的功率检测。第三连接线1012、副线1011、第四连接线1013可以位于同一直线。可选的，第三连接线1012、副线1011、第四连接线1013也可以不再同一直线上，可以构成一弯折线。其中，第三连接线1012、副线1011之间的夹角α1为小于180度的钝角，第四连接线1013与副线1011之间的夹角α2为小于180度的钝角，以便于与射频收发器连接。
射频主线102的主线1021正投影在第一介质层120的投影线与射频副线101的副线1011交叉设置。需要说明的是，其交叉角θ可以理解为主线1021的投影线与该副线1011之间的交叉角θ，且该交叉角θ为锐角。
当夹角的角度为15°时，根据如图5所示的仿真图，可以得到对应的耦合度的仿真数据，如表1所示。其中，如图5所示的仿真图中，S12是指RFIN到射频主线102的输出端RFOUT的插入损耗值，S13是指射频主线102的输入端RFIN到射频副线101的负载端的隔离度；S14是指射频主线102的输入端RFIN到射频副线101的耦合端FBRX OUT的隔离度。
表1为微带耦合器耦合不同频段范围的射频信号的耦合度
频段(MHz) 690～960 1500～2700
耦合度 -33 -29～-24
分析表1，结合耦合度的设计要求，如图4所示的微带耦合器可适用于耦合1500～2700MHz频段的射频信号。
在其中一个实施例中，基于如图4的微带耦合器，当夹角的角度为30°时，根据如图6所示的仿真图，可以得到对应的耦合度的仿真数据，如表2所示。
表2为微带耦合器耦合不同频段范围的射频信号的耦合度
频段(MHz) 690～960 1500～2700 3300～4200
耦合度 -38 -34～-30 -28～-26
分析表2，结合耦合度的设计要求，如图5所示的微带耦合器可适用于耦合3300～4200MHz频段的射频信号。
在本申请实施例中，通过设置主线正投影在第一介质层120上的投影线与射频副线交叉，其形成的交叉角θ的度数大小与微带耦合器能够耦合的射频信号的频段正相关。也即，其交叉角θ的度数越大，其微带耦合器能够耦合的射频信号的频段越高。通过调节其交叉角θ的角度大小，则可以对应调节该微带耦合器能够耦合的射频信号的频段范围，以实现对多频段射频信号的耦合，并且能够保证其微带耦合器的耦合度维持在预设范围(例如，-25--30)内。
如图7所示，在其中一个实施例中，射频主线102正投影在第一介质层120的投影线102’与射频副线101交叉设置。具体的，主线1021正投影在第一介质层120的投影线与副线1011交叉设置，同时，第一连接线1022正投影在第一介质层120的投影线102’与第三连接线1012平行设置，第二连接线1023正投影在第一介质层120的投影线102’与第四连接线1013平行设置。也即，射频主线102与射频副线101中两端的连接线相互平行间隔设置，其主线1021与副线1011在空间上交叉设置。通过调节其交叉角θ的角度大小，第一连接线1022与第三连接线1012之间的距离，或，第二连接线1023与第四连接线1013的距离，则可以对应调节该微带耦合器能够耦合的射频信号的频段范围，以实现对多频段射频信号的耦合，并且能够保证其微带耦合器的耦合度维持在预设范围(例如，-25--30)内。
可选的，射频主线102中第一连接线1022、第二连接线1023的位置可以互换。互换后，第一连接线1022可与射频副线101的第四连接线1013在主线1021或副线1011的同一侧平行设置，第二连接线1023可与射频副线101的第三连接线1012在主线1021或副线1011的同一侧平行设置。
可选的，射频副线101中的第三连接线1012、第四连接线1013的位置也可以互换。
上述实施例中，通过设置主线1021正投影在第一介质层120的投影线与副线1011交叉设置，其连接线相互平行设置，通过调节其交叉角θ的角度大小，第一连接线1022与第三连接线1012之间的距离，或，第二连接线1023与第四连接线1013的距离，则可以对应调节该微带耦合器能够耦合的射频信号的频段范围，以实现对多频段射频信号的耦合，并且能够保证其微带耦合器的耦合度维持在预设范围(例如，-25--30)内。
如图8所示，在其中一个实施例中，射频主线102正投影在第一介质层120的投影线102’与射频副线101交叉设置。具体的，主线1021正投影在第一介质层120的投影线102’与副线1011交叉设置，第一连接线1022、第二连接线1023中一条正投影在第一介质层120的投影线102’与第三连接线1012平和第四连接线1013中的一条平行设置。示例性的，第一连接线1022正投影在第一介质层120的投影线102’与第三连接线1012重合，且，第二连接下正投影在第一介质层120的投影线102’与第四连接线1013间隔平行设置。或者是，第二连接线1023正投影在第一介质层120的投影线102’与第四连接线1013重合，且，第一连接下正投影在第一介质层120的投影线102’与第三连接线1012间隔平行设置。在本实施例中，主线1021正投影在第一介质层120的投影线102’与副线1011交叉设置的交叉叫的范围可以为30度-60度，其交叉角θ的范围可以为前述实施例(如图4和图7所示的微带耦合器)中的交叉角θ的二倍。
在本实施例中，由于射频主线102和射频副线101空间相交，也即射频主线102正投影在第一介质层120的投影线102’与射频副线101存在交叉角θ度，可以减小两条射频主线102与射频副线101之间的耦合度，根据实际射频信号的频段需求，通过调整交叉角θ度，获取所需频段的微带耦合器。
如图9所示，在其中一实施例中，在前述任一实施例的基础上，微带耦合器还包括：第三介质层140。其中，第三介质层140设置在接地层110与第一介质层120之间，第三介质层140开设有第一镂空槽141，第一镂空槽141与第一凹槽121对应设置。第一镂空槽141可以理解为该槽贯穿整个第三介质层140。其中，第一镂空槽141的形状、大小可以与前述实施例中的第一凹槽121、第二凹槽131中的至少一个相同，也可以各不相同。第一镂空槽141、第一凹槽121、第二凹槽131的位置可以对应设置，也即，第一凹槽121设置在第一镂空槽141的正上方，第二凹槽131设置在第一凹槽121的正上方。第一镂空槽141、第一凹槽121、第二凹槽131中，各个槽的几何中心均位于同一轴线。
为了便于说明，以如图9所示的微带耦合器中，射频主线102正投影在第一介质层110上的投影线102’与射频副线101平行设置为例，可以得到如图10所示的仿真图，可以得到对应的耦合度的仿真数据，如表3所示。
表3为微带耦合器耦合不同频段范围的射频信号的耦合度
Figure PCTCN2022091414-appb-000001
分析表3，如图9所示的微带耦合器可适用于690～960MHz频段。
在本申请实施例中，通过设置第三介质层140，并在第三介质层140中开始第一镂空槽141，可以增加射频副线101与接地层110之间的间距，也即，可以增加耦合端FBRX与接地层110之间的间距，进而可以提高微带耦合器的耦合度，以使其微带耦合器的耦合度维持在预设范围内。
如图11和图12所示，在前述任一实施例的基础上，微带耦合器还包括：第四介质层150，设置在第一介质层120与第二介质层130之间，第四介质层150开设有第二镂空槽151，第二镂空槽151与第一凹槽121连通。其中，第二镂空槽151的形状、大小可以与前述实施例中的第一凹槽121、第二凹槽131中的至少一个相同，也可以各不相同。第一镂空槽141、第一凹槽121、第二镂空槽151、第二凹槽131的位置可以对应设置，也即，第一凹槽121设置在第一镂空槽141的正上方，第二镂空槽151设置在第一凹槽121的正上方，第二凹槽131设置在第二镂空槽151的正上方。第一镂空槽141、第一凹槽121、第二镂空槽151、第二凹槽131中，各个槽的几何中心均位于同一轴线。
为了便于说明，以如图11所示的微带耦合器中，射频主线102正投影在第一介质层110上的投影线102’与射频副线101平行设置为例，可以得到如图13所示的仿真图，可以得到对应的耦合度的仿真数据，如表4所示。
表4为微带耦合器耦合不同频段范围的射频信号的耦合度
频段(MHz) 690～960 1500～2700
耦合度 -33 -28～-26
分析表4，如图10所示的微带耦合器可适用于1500～2700MHz频段。
在本申请实施例中，通过设置第四介质层150，并在第四介质层150中开始第二镂空槽151，可以增加射频主线102与射频副线101之间的间距，也即，可以增加射频输入端RFIN与耦合端FBRX之间的间距，以达到降低微带耦合器的耦合度，以使其微带耦合器的耦合度维持在预设范围内。
如图14所示，在其中一实施例中，第一介质层120开设有第一过孔，第二介质层130开设有第二过孔，微带耦合器还包括：设置在第二介质层130上的负载电阻160。其中，负载电阻160的第一端与射频副线101连接，负载电阻160的第二端通过第一过孔、第二过孔与第二介质层130的接地区132连接。示例性的，负载电阻160可以作为微带耦合器的通信负载。其负载电阻160的大小可以设置为50欧姆。示例性的，还可以通过提供诸如可调谐或可变电容器、电感器或电阻器的一个或多个可调谐阻抗元件来实现可调节通信负载。
具体的，射频信号可经射频主线102的第一连接线1022，例如RFIN端口进入至微带耦合器，其射频信号可经射频主线102传输至第二连接端，例如，输出端口RFOUT，并输出。与此同时，其射频主线102上传输的射频信号还可以与射频副线101进行耦合，以经耦合端FBRX输出耦合信号，同时，射频副线101中的第三连接线1012经负载电阻160与第二介质层130的接地区132连接。
在本申请实施例中，通过在射频副线101的第一连接端(也即，隔离端)设置一负载电阻160，可以用来调节其微带耦合器的通信负载，使其与PCB板上的其他射频器件实现阻抗匹配。
本申请实施例还提供一种PCB板，其PCB板包括前述任一实施例中的微带耦合器。
在其中一个实施例中，集成在PCB板上的微带耦合器的数量可以为一个，也可以为两个。当PCB板上包括多个微带耦合器时，则可以实现对多个不同频段的射频信号的耦合，以用于检测多个不同频段的射频信号的功率信息。
如图15所示，本申请实施例还提供一种射频系统，包括射频收发器20、发射模块30、前述任一实施例中的微带耦合器10以及天线40。其中，射频收发器20、发射模块30分别设置在接地层110背离第一介质层120的一侧。
射频收发器20，被配置有用于发射射频信号的发射端口以及用于功率检测的反馈端口。
发射模块30，与发射端口连接，用于接收射频信号，并对接收的射频信号进行放大、滤波处理。在其中一个实施例中，发射模块30可以为内置多个放大单元的多频多模功率放 大器(Multi-band multi-mode power amplifier，MMPA)。该发射模块30配置的各个端口可以理解为多频多模放大器的射频引脚。可选的，发射模块30还可以理解集成双工器的功率放大器模组(Power amplifier module integrated duplexer，PA Mid)，也可以为内置低噪声放大器的PA Mid，也即，L-PA Mid。该发射模块30上配置的各个端口可以理解为PA Mid的射频引脚。
微带耦合器10中的射频主线102的输入端与发射模块30连接，射频副线101的耦合端与射频收发器20的反馈端连接，用于将耦合信号传输至射频收发器20。具体的，设置射频主线102的第一凹槽121以及设置射频副线101的第二凹槽131可以为射频主线102与射频副线101的耦合提供耦合空间，具体的，发射模块30处理后的射频信号可经射频主线102的输入端传输至射频主线102的输出端，并经天线40辐射到自由空间。其中，通射频主线102上传输的射频信号将有一部分耦合到射频副线101中去，由于波的干涉或叠加，使射频信号仅沿射频副线101的一个方向传输(称“正向”)，例如，射频副线101的耦合端，并经耦合端传输至射频收发器20的反馈端口；而另一方向则几乎毫无功率传输(称“反向”)例如，射频副线101的隔离端。
在其中一个实施例中，与射频副线101的耦合端连接的还可以为功率检测模块，用于对耦合端输出的耦合信号进行功率检测。其中，功率检测模块可以为功率检测计等。
需要说明的是，在本申请实施例中，射频系统中的发射模块30、功率检测模块的具体形式不做进一步的限定。
在本申请实施例中的射频系统，通过设置集成在PCB上的微带耦合器，射频副线101可以基于第一凹槽、第二凹槽提供的耦合空间与设置在第二凹槽中的射频主线102进行耦合，以形成耦合信号，并将产生的耦合信号经射频副线101的耦合端输出至射频收发器中用于检测功率信息的反馈端口以实现对发射模块输出的射频信号的输出功率的检测。这样，可以避免在PCB板上安装单颗的耦合元器件(例如，波导、同轴线、带状线等类型的耦合元器件)，同时还可以简化与该耦合元器件的配套的分立器件，简化了PCB板的走线排布，节约了PCB的占用面积，以及降低了成本。同时，通过设置射频主线102与射频副线101在对应凹槽中的相对位置，例如，射频主线102正投影在第一介质层的投影线与射频副线101不完全重合，还可以使微带耦合器适用于耦合多频段的射频信号。
如图16所示，在其中一个实施例中，射频系统还可包括接收模块50、滤波模块60等。其中，接收模块50可支持对多个不同频段的射频信号的接收处理，例如，接收模块50可包括多个低噪声放大器、滤波器以及射频开关等。具体的，射频系统中包括的微带耦合器10的数量可以实际需求来设定，例如，可以在每一天线40的发射通路上对应设置一个微带耦合器10。滤波模块60可设置在射频信号的发射通路和接收通路上。具体的，滤波模块可分别与发射模块20、接收模块50以及微带耦合器10连接，用于支持对各个频段的射频信号的滤波处理，以滤波各个频段的杂散波等。
在其中一个实施例中，设置前述任一实施例中的微带耦合器的射频系统可以应用到具有无线通信功能的通信设备，其通信设备可以为手持设备、车载设备、可穿戴设备、计算设备或连接到无线调制解调器的其他处理设备，以及各种形式的用户设备(User Equipment，UE)(例如，手机)，移动台(Mobile Station，MS)等等。为方便描述，上面提到的设备统称为通信设备。网络设备可以包括基站、接入点等。
以上实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (22)

  1. 一种微带耦合器，包括：
    接地层；
    第一介质层，设置在所述接地层上，所述第一介质层的上表层开设有第一凹槽，所述第一介质层的上表层除所述第一凹槽以外的区域为接地区；
    射频副线，设置在所述第一凹槽中，所述射频副线的耦合端用于输出耦合信号；
    第二介质层，设置在所述第一介质层上，所述第二介质层的上表层开设有第二凹槽，所述第二介质层的上表层除所述第二凹槽以外的区域为接地区；
    射频主线，设置在所述第二凹槽中，所述射频主线的输入端用于与发射模块连接，所述射频主线的输出端用于与天线连接；其中，
    所述射频主线正投影在所述第一介质层的投影线与所述射频副线不完全重合，以使所述射频副线与所述射频主线耦合以形成所述耦合信号。
  2. 根据权利要求1所述的微带耦合器，其中，所述射频主线正投影在所述第一介质层的投影线与所述射频副线平行设置。
  3. 根据权利要求2所述的微带耦合器，其中，所述第一凹槽的槽底几何中心与所述第二凹槽的槽底几何中心同轴设置，所述射频主线与所述射频副线平行设置，且在堆叠方向不重叠。
  4. 根据权利要求1所述的微带耦合器，其中，所述射频主线正投影在所述第一介质层的投影线与所述射频副线交叉设置，其中，形成的交叉角的角度与所述微带耦合器的耦合频段正相关。
  5. 根据权利要求4所述的微带耦合器，其中，所述射频主线包括主线以及设置在主线两端的第一连接线、第二连接线，所述射频副线包括副线以及设置在副线两端的第三连接线、第四连接线，其中，
    所述主线正投影在所述第一介质层的投影线与所述副线交叉设置，所述第一连接线正投影在所述第一介质层的投影线与所述第三连接线平行设置，所述第二连接线正投影在所述第一介质层的投影线与所述第四连接线平行设置。
  6. 根据权利要求4所述的微带耦合器，其中，所述射频主线包括主线以及设置在主线两端的第一连接线、第二连接线，所述射频副线包括副线以及设置在副线两端的第三连接线、第四连接线，其中，
    所述主线正投影在所述第一介质层的投影线与所述副线交叉设置，所述第一连接线、第二连接线中一条正投影在所述第一介质层的投影线与所述第三连接线平和第四连接线中的一条平行设置。
  7. 根据权利要求6所述的微带耦合器，其中，所述第一连接线正投影在所述第一介质层的投影线与所述第三连接线重合，且，所述第二连接下正投影在第一介质层的投影线与所述第四连接线间隔平行设置。
  8. 根据权利要求6所述的微带耦合器，其中，所述第二连接线正投影在所述第一介质层的投影线与所述第四连接线重合，且，所述第一连接下正投影在所述第一介质层的投影线与所述第三连接线间隔平行设置。
  9. 根据权利要求6所述的微带耦合器，其中，所述第一连接线、第二连接线分别与所述主线之间的夹角为钝角；所述第三连接线、第四连接线分别与所述副线之间的夹角为钝角。
  10. 根据权利要求4所述的微带耦合器，其中，所述交叉角的角度范围为15度-60度。
  11. 根据权利要求1-10任一项所述的微带耦合器，其中，所述微带耦合器还包括：
    第三介质层，设置在所述接地层与所述第一介质层之间，所述第三介质层开设有第一镂空槽，所述第一镂空槽与所述第一凹槽对应设置。
  12. 根据权利要求1-10任一项所述的微带耦合器，其中，所述微带耦合器还包括：
    第四介质层，设置在所述第一介质层与所述第二介质层之间，所述第四介质层开设有第二镂空槽，所述第二镂空槽与所述第一凹槽连通。
  13. 根据权利要求1-10任一项所述的微带耦合器，其中，所述微带耦合器还包括：
    第三介质层，设置在所述接地层与所述第一介质层之间，所述第三介质层开设有第一镂空槽，所述第一镂空槽与所述第一凹槽对应设置；
    第四介质层，设置在所述第一介质层与所述第二介质层之间，所述第四介质层开设有第二镂空槽，所述第二镂空槽与所述第一凹槽连通。
  14. 根据权利要求1所述的微带耦合器，其中，所述第一介质层开设有第一过孔，所述第二介质层开设有第二过孔，所述微带耦合器还包括：
    负载电阻，设置在第二介质层上，所述负载电阻的第一端与所述射频副线连接，所述负载电阻的第二端通过所述第一过孔、第二过孔与所述第二介质层的所述接地区连接。
  15. 根据权利要求1所述的微带耦合器，其中，所述接地区为金属铜箔。
  16. 根据权利要求1所述的微带耦合器，其中，所述第一凹槽、第二凹槽的槽底均为PCB板的介质基材。
  17. 根据权利要求16所述的微带耦合器，其中，所述射频副线、所述射频主线分别通过印制或蒸镀的方式形成在所述PCB板的所述介质基材上。
  18. 根据权利要求1所述的微带耦合器，其中，所述射频主线正投影在所述第一介质层上的投影线与所述射频副线不重合，或，所述射频主线正投影在所述第一介质层上的投影线与所述射频副线部分重合。
  19. 一种PCB板，包括如权利要求1-18任一项所述的微带耦合器。
  20. 一种射频系统，包括：
    射频收发器，被配置有用于发射射频信号的发射端口以及用于功率检测的反馈端口；
    发射模块，与所述发射端口连接，用于接收所述射频信号，并对接收的所述射频信号进行放大、滤波处理；
    如权利要求1-18任一项所述的微带耦合器，其中，所述射频主线的输入端与所述发射模块连接，所述射频副线的耦合端与所述射频收发器的反馈端连接，用于将所述耦合信号传输至所述射频收发器；
    天线，与所述射频主线的输出端，用于辐射经所述微带耦合器传输的所述射频信号。
  21. 根据权利要求120所述的射频系统，其中，所述射频收发器、发射模块分别设置在所述接地层背离所述第一介质层的一侧。
  22. 一种通信设备，包括：如权利要求20-21任一项所述的射频系统。
PCT/CN2022/091414 2021-07-08 2022-05-07 微带耦合器、pcb板、射频系统和通信设备 WO2023279832A1 (zh)

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