WO2023274686A1 - Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements - Google Patents
Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements Download PDFInfo
- Publication number
- WO2023274686A1 WO2023274686A1 PCT/EP2022/065835 EP2022065835W WO2023274686A1 WO 2023274686 A1 WO2023274686 A1 WO 2023274686A1 EP 2022065835 W EP2022065835 W EP 2022065835W WO 2023274686 A1 WO2023274686 A1 WO 2023274686A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor laser
- optical element
- optoelectronic component
- light beam
- component according
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 80
- 239000004065 semiconductor Substances 0.000 claims abstract description 80
- 239000004038 photonic crystal Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
Definitions
- the following description relates to an optoelectronic component and a method for producing an optoelectronic component.
- LiDAR Light Detection and Ranging
- mobile devices such as mobile phones, computers, tablets, and is also increasingly being used in robots and vehicles such as autonomous vehicles.
- robots and vehicles such as autonomous vehicles.
- today's LiDAR systems are often based on LiDAR
- Such an example is “structured light” (structured light) applications that use a surface emitter or VCSEL (vertical-cavity surface-emitting laser).
- VCSEL vertical-cavity surface-emitting laser
- Such systems today require a very complex optical setup, which in turn requires a certain height ( see for example iPhone Face Recognition etc.).
- "Structured Light” applications based on edge-emitting laser diodes are today limited to typically 200 mW output power, since single modes (English: single-mode) are usually required.
- DFB distributed Feedback Lasers
- DFB distributed Feedback Lasers
- One aspect relates to the use of a semiconductor laser which, due to its design, generates strongly collimated light.
- a semiconductor laser which, due to its design, generates strongly collimated light.
- One example is the surface-emitting laser diode based on photonic crystals (PCSEL, or photonic-crystal surface-emitting laser).
- PCSEL photonic crystals
- Meta-optics or diffractive optics, such as a structured plate, can be used in this way without having to use additional collimating optics.
- an optoelectronic component includes a housing.
- An optical element and a semiconductor laser are arranged along a common optical axis within the housing.
- the semiconductor laser is set up to generate a light beam with diffraction-limited divergence by a laser process.
- the light beam is essentially collimated at the optical element.
- the optical element can, for example, comprise a diffractive optical element and/or a meta-optical element.
- a metaoptical element has at least one metasurface, which in turn has an array of nanostructures assembled on a sub-wavelength scale that can mimic electromagnetic wavefronts.
- the semiconductor laser can decouple part of the radiation generated by the laser process in the direction of the optical element. Beam divergence is small, particularly in the case of modern semiconductor lasers with a large active area. The light beam that is coupled out is thus essentially collimated at the optical element.
- substantially collimated can be understood to mean that the beam divergence is so small that the light beam is collimated for use of the optical element.
- the coupling can take place with a single high-power mode of the semiconductor laser and allows the use of simple diffractive optics or meta-optics because beam expansion can be dispensed with for many applications. This also makes adjustment easier, so that active elements on the part of a signal evaluation can be dispensed with.
- the optoelectronic component can thus be produced in a more compact and cost-effective manner.
- the semiconductor laser is free of collimating optics.
- a light beam with diffraction-limited divergence is generated by the laser process or the optical properties of the laser, so that the Light beam is essentially collimated on the optical element.
- the collimation is therefore not effected by collimating optics integrated in the semiconductor laser for this purpose or arranged at a distance from the laser.
- the semiconductor laser has an aperture.
- the semiconductor laser emits the light beam through the aperture.
- the beam divergence at the FWHM of the light beam is essentially less than 0.1° despite diffraction at the aperture.
- the laser radiation is coupled out via its aperture, which thus limits the active area. Beam divergence is affected by diffraction at the aperture, but the divergence remains diffraction limited.
- the value of approx. 0.1° can be achieved with an aperture diameter of 500 ⁇ m, for example. However, this depends on the semiconductor laser used.
- the semiconductor laser comprises a surface emitting photonic crystal semiconductor diode, PCSEL.
- the semiconductor material is transparent or non-absorbent for the laser radiation generated.
- the laser process or laser amplification occurs through stimulated emission and is achieved by coupling the photonic crystal structure with a thin active layer (amplifier layer) underneath the photonic crystal layer within evanescent waves of the laser modes.
- the active area is separated from the photonic crystal structure only by a thin electron blocking layer to confine the electrical charge carriers in the active area.
- this structure is an optically transparent and electrically conductive cladding layer made of doped semiconductor.
- An electrical current to pump the active area is applied through metallic electrodes on the top and bottom.
- this electrode covers only a small part of the area, e.g. a rectangular area with dimensions of the order of 10 gm to 100 gm. It is also possible to use a top electrode from which a rectangular area in the center has been removed. This leads to pumping of the photonic crystal mode in its outer region, while output coupling is possible in the central region.
- the photonic crystal structure also bends part of the light so that the light beam is created and can be coupled out.
- This output beam leaves the semiconductor laser in a direction perpendicular to an output surface.
- the beam divergence becomes small.
- the laser effectively emits a collimated beam of light that does not require a collimating lens.
- PCSELs Due to their design, PCSELs can generate single modes with high output powers of > 500 mW up to 30 W (in pulsed mode). This makes these lasers particularly interesting for LiDAR and other distance measurement methods such as time-of-flight, because they enable the measurement of large distances of several tens of meters. Furthermore, these lasers show little or no beam expansion, so that collimation can be dispensed with.
- the PCSEL wavelength stability is comparable to other surface-emitting lasers such as the VCSEL.
- the optical element is set up to structure the light beam emitted by the semiconductor laser in such a way that a known pattern can be projected onto an external object.
- Structured light can be generated by the optical element structured in this way.
- Structured light is the process of projecting a known pattern (such as a grid or horizontal bars) onto an external object.
- a known pattern such as a grid or horizontal bars
- the way the pattern deforms when it hits surfaces allows vision systems to calculate the depth and surface information of the objects in the scene, thus generating a 3D image.
- LiDAR or ToF (Time-of-Flight) applications light propagation times of individual structures of the pattern can be measured and distance information can also be obtained in this way. For example, a point grid is generated by the structured optical element for such applications.
- the optical element has a non-zero distance to the semiconductor laser on.
- the optical element can be arranged at a distance, albeit small, from the semiconductor laser.
- the optical element is mounted directly on the semiconductor laser.
- the optical element can be placed at zero effective distance from the semiconductor laser.
- the optical element is attached or mounted on a surface, for example the aperture.
- the optical element is integrated in the semiconductor laser. In this way there is no distance to the semiconductor laser. It is also possible to produce the optical element together with the laser in a common process, for example using CMOS technology on a wafer. This allows further cost savings.
- the optical component further comprises expansion optics and recollimation optics.
- expansion optics and recollimation optics are integrated in the semiconductor laser.
- the expansion optics can be integrated on or in a surface of the semiconductor laser or can be designed as a flat plate. It is also possible to manufacture the expansion optics together with the laser in a common process, for example using CMOS technology on a wafer. This allows further cost savings.
- the expansion optics are mounted on the semiconductor laser.
- the expansion optics are attached or mounted on a surface, for example the aperture.
- the recollimation optics are integrated in the optical element.
- the recollimation optics are integrated on a front side or a rear side of the optical element and mounted on the semiconductor laser. In this way, the distance between the recollimation optics and the semiconductor laser can also be zero.
- the optical element and the semiconductor laser are arranged in a first chamber within the housing.
- the housing also has a second chamber in which an optical detector is arranged. In this way, a cost-effective module can be produced in which emission and detection are arranged directly next to each other and thus compact.
- an overall height of the housing is essentially determined by the distance between the optical element and the semiconductor laser.
- the optical element represents the output side of the optoelectronic element. According to the improved concept presented, the distance from the semiconductor laser can be kept small, so that a low overall height of the housing is possible.
- One embodiment of a method for producing an optoelectronic component comprises the following steps. First, a housing is provided. An optical element and a semiconductor laser are arranged in the housing along a common optical axis. In this case, the semiconductor laser is set up to generate a light beam with diffraction-limited divergence by means of a laser process, so that the light beam is essentially collimated at the optical element.
- Exemplary embodiments serve to further illustrate and explain aspects of the improved concept.
- Components and parts with the same structure or the same effect appear with corresponding reference symbols.
- components and parts in different figures have the same function, their description is not necessarily repeated for each of the following figures.
- FIG. 1 shows an exemplary embodiment of an optoelectronic element
- Figure 2 shows a further exemplary embodiment of an optoelectronic element
- FIG. 3 shows a further exemplary embodiment of an optoelectronic element.
- FIG. 1 shows an exemplary embodiment of an optoelectronic component.
- the optoelectronic component comprises a housing, a diffractive optical element 10 and a semiconductor laser 20.
- the diffractive optical element and the semiconductor laser are arranged in the housing, with the housing itself not being shown in the drawing.
- the semiconductor laser and the diffractive optical element are arranged along a common optical axis.
- the diffractive optical element 20 is designed for the projection of structured light, for example for a LiDAR or ToF application.
- the optics have, for example, a single plate or several stacked plates. These small plates are, for example, constructed in the form of a grid so that they can map or project a regular point pattern onto an external object (see upper right part of the drawing).
- the diffractive optical element is arranged at a distance DZ from an active surface 21 of the semiconductor laser 20 .
- the semiconductor laser comprises a surface emitting photonic crystal laser, PCSEL. This type of semiconductor laser has an aperture 22 on the active surface (ie the surface facing the diffractive optics), by means of which light beams can be coupled out of the laser.
- the semiconductor laser During operation, the semiconductor laser generates a light beam with diffraction-limited divergence through a laser process.
- the beam divergence at the full width at half maximum of the light beam is essentially less than 0.1°, depending on a diameter of the aperture, despite diffraction at the aperture.
- the semiconductor laser is free of collimating optics. In this exemplary embodiment, no further optics are integrated into the semiconductor laser itself or arranged along the common optical axis.
- the distance between the active surface 21 of the semiconductor laser 20 and the diffractive optical element 10 essentially determines a housing height. Since the decoupled laser light is essentially collimated at the diffractive optical element, this distance and thus the height of the housing can be kept small. In addition to this advantageously low overall height, no active adjustment of the optical elements to one another, for example by means of signal processing components of the optoelectronic element or downstream signal processing, is necessary. A passive adjustment during the production of the optoelectronic element is usually sufficient with good accuracy.
- Typical parameters for the PCSEL laser are as follows: Circular aperture > 200 mpi
- Output power typ. 500 mW (CW) to 10 W (pulsed)) low M 2 typ. at 500 pm apertures ⁇ ⁇ 0.1° 1/e 2 divergence wavelength stability ⁇ 0.07nm/K - comparable to VCSEL
- FIG. 2 shows a further exemplary embodiment of an optoelectronic element.
- the arrangement of the components essentially corresponds to the arrangement already shown in FIG.
- Re-collimating optics and widening optics are also provided for improved collimation to values much smaller than 0.1° or for the use of semiconductor lasers with lower powers.
- the semiconductor laser has a smaller aperture 22 or smaller active area. Due to the smaller aperture, there is a higher beam divergence due to diffraction.
- diffractive expansion optics 11 are therefore integrated in a surface or on a surface of semiconductor laser 20 . This can be implemented, for example, as a flat plate or as a regular lens during a manufacturing process of the semiconductor laser. For example, additional layers can be introduced into the material at specific intervals or diffractive elements during epitaxy. Another possibility are so-called Fresnel lenses.
- the widening optics 11 have the effect of widening the decoupled light beam and thus increasing the divergence to decrease.
- the recollimating optics 12 are then arranged downstream of the widening optics 11 and are also arranged along the optical axis.
- the recollimation optics are arranged on the surface 21 of the semiconductor laser, for example on the aperture 22 .
- the collimation of the decoupled light beam is then restored by means of the recollimating optics, so that there is collimated light at the diffractive optical element.
- FIG. 3 shows a further exemplary embodiment of an optoelectronic element.
- This arrangement is also similar to that previously shown. It can be used, for example, for smaller output powers and improved collimation.
- the expansion optics 11 are integrated into a chip surface 21, for example as a flat platelet, in the semiconductor material.
- the recollimation optics 12 are integrated either on a front side 13 or on a rear side 14 of the diffractive optical element 10 .
- the expansion optics can also be integrated in the diffractive optical element, for example in its rear side, ie the side facing the semiconductor laser. In such an embodiment, the distance between the diffractive optical element and the semiconductor laser can be minimized to zero.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202280044484.2A CN117546380A (zh) | 2021-06-29 | 2022-06-10 | 光电组件和用于制造光电组件的方法 |
DE112022001450.4T DE112022001450A5 (de) | 2021-06-29 | 2022-06-10 | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102021116674.8 | 2021-06-29 | ||
DE102021116674.8A DE102021116674A1 (de) | 2021-06-29 | 2021-06-29 | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
Publications (1)
Publication Number | Publication Date |
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WO2023274686A1 true WO2023274686A1 (de) | 2023-01-05 |
Family
ID=82358453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/EP2022/065835 WO2023274686A1 (de) | 2021-06-29 | 2022-06-10 | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN117546380A (de) |
DE (2) | DE102021116674A1 (de) |
WO (1) | WO2023274686A1 (de) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252741A1 (en) * | 2003-05-28 | 2004-12-16 | Jerry Meyer | Surface-emitting photonic crystal distributed feedback laser systems and methods |
US20090147818A1 (en) * | 2007-12-05 | 2009-06-11 | International Business Machines Corporation | Enhanced surface-emitting photonic device |
WO2018220062A2 (de) * | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und verfahren zum herstellen einer laserdiode |
US20200067281A1 (en) * | 2016-10-06 | 2020-02-27 | Christopher CURWEN | Inhomogeneous focusing and broadband metasurface quantum-cascade lasers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6440138B2 (ja) | 2014-02-28 | 2018-12-19 | 国立大学法人京都大学 | レーザ装置 |
EP3130950A1 (de) | 2015-08-10 | 2017-02-15 | Multiphoton Optics Gmbh | Strahlumlenkelement sowie optisches bauelement mit strahlumlenkelement |
JP6355178B2 (ja) | 2017-06-29 | 2018-07-11 | 国立大学法人京都大学 | レーザ装置 |
-
2021
- 2021-06-29 DE DE102021116674.8A patent/DE102021116674A1/de not_active Withdrawn
-
2022
- 2022-06-10 WO PCT/EP2022/065835 patent/WO2023274686A1/de active Application Filing
- 2022-06-10 CN CN202280044484.2A patent/CN117546380A/zh active Pending
- 2022-06-10 DE DE112022001450.4T patent/DE112022001450A5/de active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040252741A1 (en) * | 2003-05-28 | 2004-12-16 | Jerry Meyer | Surface-emitting photonic crystal distributed feedback laser systems and methods |
US20090147818A1 (en) * | 2007-12-05 | 2009-06-11 | International Business Machines Corporation | Enhanced surface-emitting photonic device |
US20200067281A1 (en) * | 2016-10-06 | 2020-02-27 | Christopher CURWEN | Inhomogeneous focusing and broadband metasurface quantum-cascade lasers |
WO2018220062A2 (de) * | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Laserdiode und verfahren zum herstellen einer laserdiode |
Non-Patent Citations (1)
Title |
---|
BAI Y ET AL: "Electrically pumped photonic crystal distributed feedback quantum cascade lasers", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 91, no. 14, 5 October 2007 (2007-10-05), pages 141123 - 141123, XP012099499, ISSN: 0003-6951, DOI: 10.1063/1.2798062 * |
Also Published As
Publication number | Publication date |
---|---|
DE112022001450A5 (de) | 2023-12-28 |
DE102021116674A1 (de) | 2022-12-29 |
CN117546380A (zh) | 2024-02-09 |
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