WO2023273099A1 - Dispositif à semi-conducteurs de puissance - Google Patents

Dispositif à semi-conducteurs de puissance Download PDF

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Publication number
WO2023273099A1
WO2023273099A1 PCT/CN2021/130401 CN2021130401W WO2023273099A1 WO 2023273099 A1 WO2023273099 A1 WO 2023273099A1 CN 2021130401 W CN2021130401 W CN 2021130401W WO 2023273099 A1 WO2023273099 A1 WO 2023273099A1
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WIPO (PCT)
Prior art keywords
semiconductor device
power semiconductor
voltage
pin
detection
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PCT/CN2021/130401
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English (en)
Chinese (zh)
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WO2023273099A9 (fr
Inventor
陈燕平
窦泽春
谢舜蒙
彭勇殿
朱武
张�荣
荣春晖
袁勇
陈明翊
谭一帆
Original Assignee
中车株洲电力机车研究所有限公司
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Priority to DE112021007093.2T priority Critical patent/DE112021007093T5/de
Publication of WO2023273099A1 publication Critical patent/WO2023273099A1/fr
Publication of WO2023273099A9 publication Critical patent/WO2023273099A9/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52—Testing for short-circuits, leakage current or ground faults
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/08—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to excess current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
    • G01R31/3271—Testing of circuit interrupters, switches or circuit-breakers of high voltage or medium voltage devices
    • G01R31/3275—Fault detection or status indication

Definitions

  • the invention relates to the technical field of power semiconductor devices, in particular to a power semiconductor device integrated with a detection diode.
  • FIG. 1 shows a schematic diagram of a fault detection circuit of a conventional power semiconductor device.
  • the drive circuit (not shown) of the power semiconductor device can first use the detection diode 112 to block the high voltage when the power semiconductor device is turned off, and When the device 12 is turned on, the detection circuit 11 uses the detection diode 112 to detect the terminal voltage of the power semiconductor device 12 , thereby realizing the short circuit detection of the power semiconductor device 12 .
  • the detection diode 112 needs to withstand the turn-off overvoltage and the bus voltage of the power semiconductor device 12 during the turn-off process and the turn-off state of the power semiconductor device 12 . Therefore, the selection and layout of the detection diode 112 is one of the keys to the design of the power semiconductor driving circuit.
  • the existing power semiconductor device 12 generally does not integrate the detection diode 112 , and the driving designer of the power semiconductor device 12 needs to select the type when designing the driving circuit.
  • the driver designer of the power semiconductor device 12 needs to consider factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode 112 to select the type and layout of the detection diode 112 , which is time-consuming and labor-intensive.
  • the withstand voltage of existing high-voltage diodes is generally between 1000V and 2000V, while the highest blocking voltage of commercial high-voltage power semiconductor devices 12 is generally 6500V, so it is necessary to select 4-7 or even more high-voltage diodes connected in series
  • the fault detection diode 112 used to form the power semiconductor device 12 has the disadvantages of complex device structure and bulky volume, which is not in line with the development direction of power semiconductor device packaging miniaturization and high power density.
  • the highest blocking voltage of the existing power semiconductor device 12 is generally 6500V, and the distance between the high-voltage power terminal 121 and the pins corresponding to the control terminal 120 and the low-voltage power terminal 122 has an electrical isolation requirement of 6500V and prevents Creepage design requirements.
  • the separation distance between the detection interfaces of the ground detection circuit 11 of the existing power semiconductor device 12 also has a 6500V electrical isolation requirement and an anti-creepage design requirement.
  • the present invention provides a power semiconductor device, which can avoid the trouble of driver designers in selecting types and laying out detection diodes, simplify the device structure of power semiconductor devices and their detection circuits, and overcome the problems of power semiconductor devices. Electrical isolation requirements and anti-creepage design requirements for devices and/or ground detection circuits to promote the development of power semiconductor devices in the direction of package miniaturization and high power density.
  • the above-mentioned power semiconductor device includes: at least one transistor element, wherein the transistor element includes a high-voltage power terminal, a low-voltage power terminal, and a control terminal, and the high-voltage power terminal extends out of the power semiconductor device the package of the power semiconductor device to form the high-voltage pin of the power semiconductor device, the low-voltage power terminal extends out of the package of the power semiconductor device to form the low-voltage pin of the power semiconductor device, and the control terminal extends out of the power semiconductor device
  • the distance from the detection pin to the low-voltage pin and/or the control pin may be smaller than the electrical gap and/or the blocking voltage of the corresponding transistor element creepage distance.
  • the low-voltage power terminal also extends out of the package of the power semiconductor device to form a potential reference pin of the power semiconductor device.
  • the distance from the detection pin to the potential reference pin may be smaller than the electrical clearance and/or creepage distance corresponding to the blocking voltage of the corresponding transistor element.
  • the detection diode unit includes a plurality of diode elements connected in series.
  • the sum of the reverse blocking voltages of the plurality of diode elements connected in series is greater than or equal to the blocking voltage of at least one transistor element corresponding to the detection diode unit.
  • the power semiconductor device includes a plurality of transistor elements connected in parallel, and a detection diode unit.
  • the high-voltage power terminals of the plurality of parallel-connected transistor elements respectively extend out of the package of the power semiconductor device to form a plurality of the high-voltage pins of the power semiconductor device.
  • the low-voltage power ends of the plurality of parallel-connected transistor elements respectively extend out of the package of the power semiconductor device to form a plurality of the low-voltage pins of the power semiconductor device.
  • the control terminals of the plurality of parallel-connected transistor elements uniformly extend out of the package of the power semiconductor device to form the control pin of the power semiconductor device.
  • the cathode of the detection diode unit is connected to the high voltage power end of the first transistor element.
  • the anode of the detection diode unit extends out of the package of the power semiconductor device to form the detection pin of the power semiconductor device.
  • the power semiconductor device includes a plurality of transistor elements connected in series, and a plurality of detection diode units.
  • the high-voltage power terminal of the first transistor element extends out of the package of the power semiconductor device to form a high-voltage pin of the power semiconductor device.
  • the low voltage power end of the first transistor element is connected to the high voltage power end of the second transistor element to form a bridge arm circuit.
  • the low-voltage power end of the second transistor element extends out of the package of the power semiconductor device to form a low-voltage pin of the power semiconductor device.
  • the control terminals of the first transistor element and the second transistor element respectively extend out of the package of the power semiconductor device to form a plurality of control pins of the power semiconductor device.
  • the cathode of the first detection diode unit is connected to the high voltage power terminal of the first transistor element.
  • the anode of the first detection diode unit extends out of the package of the power semiconductor device to form a first detection pin of the power semiconductor device.
  • the cathode of the second detection diode unit is connected to the high voltage power terminal of the second transistor element.
  • the anode of the second detection diode unit extends out of the package of the power semiconductor device to form a second detection pin of the power semiconductor device.
  • the power semiconductor device includes a plurality of bridge arm circuits.
  • the high-voltage power ends of the first transistor elements of each of the bridge arm circuits respectively extend out of the package of the power semiconductor device to form a plurality of the high-voltage pins of the power semiconductor device.
  • the low-voltage power terminals of the second transistor elements of each of the bridge arm circuits respectively extend out of the package of the power semiconductor device to form a plurality of the low-voltage pins of the power semiconductor device.
  • the control terminals of the first transistor elements of each of the bridge arm circuits uniformly extend out of the package of the power semiconductor device to form a first control pin of the power semiconductor device.
  • the second transistor elements of each of the bridge arm circuits uniformly extend out of the package of the power semiconductor device to form a second control pin of the power semiconductor device.
  • the cathode of the first detection diode unit is connected to the high-voltage power end of the first transistor element of each of the bridge arm circuits.
  • the cathode of the second detection diode unit is connected to the high voltage power end of the second transistor element of each of the bridge arm circuits.
  • the transistor element includes an IGBT, the high-voltage power terminal of the IGBT is its collector, the low-voltage power terminal of the IGBT is its emitter, and the control terminal of the IGBT is Its gate, the potential reference pin of the IGBT is its auxiliary emitter.
  • the transistor element includes a MOSFET, the high-voltage power terminal of the MOSFET is its drain, the low-voltage power terminal of the MOSFET is its source, and the MOSFET’s The control terminal is its gate, and the potential reference pin of the MOSFET is its auxiliary source.
  • FIG. 1 shows a schematic diagram of a fault detection circuit of a conventional power semiconductor device.
  • FIG. 2A shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • FIG. 2B shows a schematic diagram of a package structure of a power semiconductor device provided according to some embodiments of the present invention.
  • Fig. 3 shows a schematic diagram of a detection circuit provided according to some embodiments of the present invention.
  • Fig. 4 shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • FIG. 5 shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • Fig. 6 shows a schematic diagram of a detection circuit provided according to some embodiments of the present invention.
  • FIG. 7 shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention in specific situations.
  • first”, “second”, “third”, etc. may be used herein to describe various components, regions, layers and/or sections, these components, regions, layers and/or sections It should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and/or sections. Thus, a first component, region, layer and/or section discussed below could be termed a second component, region, layer and/or section without departing from some embodiments of the present invention.
  • the existing power semiconductor device 12 generally does not integrate the detection diode 112 , and the driving designer of the power semiconductor device 12 needs to select the type when designing the driving circuit.
  • the driver designer of the power semiconductor device 12 needs to consider factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode 112 to select the type and layout of the detection diode 112 , which is time-consuming and labor-intensive.
  • the withstand voltage of existing high-voltage diodes is generally between 1000V and 2000V, while the highest blocking voltage of commercial high-voltage power semiconductor devices 12 is generally 6500V, so it is necessary to select 4-7 or even more high-voltage diodes connected in series
  • the fault detection diode 112 used to form the power semiconductor device 12 has the disadvantages of complex device structure and bulky volume, which is not in line with the development direction of power semiconductor device packaging miniaturization and high power density.
  • the highest blocking voltage of the existing power semiconductor device 12 is generally 6500V, and the distance between the high-voltage power terminal 121 and the pins corresponding to the control terminal 120 and the low-voltage power terminal 122 has an electrical isolation requirement of 6500V and prevents Creepage design requirements.
  • the separation distance between the detection interfaces of the ground detection circuit 11 of the existing power semiconductor device 12, and the separation distance between each detection interface and the ground also have an electrical isolation requirement of 6500V*n and an anti-creepage design requirement, wherein , n is the number of intervals between each detection interface and each detection interface to the ground.
  • the present invention provides a power semiconductor device, which can avoid the trouble of driver designer selection and layout detection diodes, simplify the device structure of the power semiconductor device, and overcome the electrical isolation of the power semiconductor device requirements and anti-creepage design requirements to promote the development of power semiconductor devices in the direction of package miniaturization and high power density.
  • FIG. 2A shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • FIG. 2B shows a schematic diagram of a package structure of a power semiconductor device provided according to some embodiments of the present invention.
  • the power semiconductor device is a large current capacity insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) device, which includes a plurality of IGBT elements connected in parallel.
  • the power semiconductor device includes a plurality of transistor subunits 21 - 23 , wherein each transistor subunit 21 - 23 accommodates one IGBT element.
  • the IGBT elements accommodated in the transistor subunit 21 include a collector, an emitter and a gate. The collector is used to connect to the high-voltage bus as the high-voltage power terminal of the IGBT element.
  • the emitter is used to be grounded or connected to the collector of another low-level IGBT component as a low-voltage power terminal of the IGBT component.
  • the gate is used to connect to the driving circuit as a control terminal of the IGBT element.
  • the IGBT components accommodated in the transistor sub-units 22 and 23 also respectively include a collector, an emitter and a gate, and have the same function, which will not be repeated here. By connecting multiple IGBT elements in parallel, the IGBT device with large current capacity can carry current several times that of ordinary IGBT elements.
  • the collectors of the IGBT elements accommodated in the transistor subunits 21 - 23 respectively extend out of the package of the power semiconductor device to form a plurality of high voltage pins 205 , 207 , 209 of the power semiconductor device.
  • the emitters of the IGBT elements accommodated in the transistor sub-units 21 - 23 respectively extend out of the package of the power semiconductor device to form a plurality of low-voltage pins 204 , 206 , 208 of the power semiconductor device.
  • the control terminals of the IGBT elements accommodated in the transistor subunits 21-23 are connected to the transistor subunit 21 inside the power semiconductor device, and then uniformly extend out of the package of the power semiconductor device through the pin subunit 25 to form the control of the power semiconductor device. pin 202.
  • the power semiconductor device further includes a detection diode subunit 24 and a pin subunit 25 .
  • One or more diode elements are housed in the detection diode subunit 24 .
  • the cathode of the diode element is connected to the collector of the IGBT element of the transistor subunit 21 , and its anode extends out of the package of the power semiconductor device through the pin subunit 25 to form a detection pin 203 of the power semiconductor device.
  • the short-circuit detection current of the IGBT element is between 10uA and 100mA.
  • the current capacity of the diode element is generally selected to be 1-2A, leaving enough margin to fully meet the short-circuit detection requirements of the detection circuit for each transistor sub-unit 21-23 of the IGBT device with a large current capacity.
  • one or more diode elements connected in series may be accommodated in the detection diode subunit 24 .
  • the sum of the reverse blocking voltages of the plurality of diode elements connected in series should be greater than or equal to the highest blocking voltage (for example: 6500V) of the corresponding IGBT element in each transistor subunit 21-23, so as to satisfy the detection circuit for blocking the power semiconductor High voltage is required when the device is turned off, and the fault detection circuit and each detection pin 201-203 are protected from high voltage damage.
  • the pin subunit 25 is further connected to the emitters of the IGBT elements of the transistor subunits 21-23 in the transistor subunit 21, and the emitters of these IGBT elements are separated from the pin subunits.
  • 25 leads out from the package of the power semiconductor device to form the voltage reference pin 201 of the power semiconductor device.
  • the voltage reference pin 201 can be used as an auxiliary emitter of the IGBT element.
  • the detection circuit of the power semiconductor device can detect the short circuit of the power semiconductor device through the voltage reference pin 201 , the control pin 202 and the detection pin 203 of the pin subunit 25 .
  • the driver designer of the power semiconductor device only needs to configure the signal processing circuit to realize the short circuit detection of the power semiconductor device , instead of selecting and laying out the diode device based on factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode, which can overcome the time-consuming and labor-intensive defects of the prior art.
  • the detection diode subunit 24 is further integrated in the package of the power semiconductor device, there is a voltage blocking effect on the collector terminals of the IGBT elements accommodated in each transistor subunit 21-23, and the detection pin 203
  • the potential V 203 will not rise to the kV level with the potentials of the high-voltage pins 205, 207, 209, but under normal working conditions, it is kept at about 5V and not more than 100V under the driving of the detection circuit. Therefore, there will be no potential difference above 100V between the detection pin 203 in FIG. 2B and the potential reference pin 201 , the control pin 202 , and the low voltage pins 204 , 206 , 208 . Therefore, when designing the package and pin arrangement of the power semiconductor device, it is not necessary to follow the limitations of the electrical clearance and creepage distance of the kV level in the prior art.
  • the detection pin 203 and the potential reference pin 201 and the control pin 202 can break through the limitation of the electrical clearance and/or creepage distance corresponding to the 6.5kV blocking voltage of the single-stage IGBT element, so that the electrical clearance and creepage distance can be determined according to the potential of the detection pin relative to the potential reference pin. Design to promote the development of power semiconductor devices in the direction of package miniaturization and high power density.
  • the distance between the detection pin 203 and each low voltage pin 204, 206, 208 can also be Break through the limitation of the electrical gap and/or creepage distance corresponding to the 6.5kV blocking voltage of single-stage IGBT components, so as to design the electrical gap and creepage distance according to the potential of the detection pin relative to the potential reference pin, so as to promote the development of power semiconductor devices
  • the development of packaging miniaturization and high power density the anti-creepage ladder shown in FIG. 2B is no longer needed between the detection pin 203 and each low-voltage pin 204, 206, 208.
  • the vertical dimension of the power semiconductor device is reduced to promote the power semiconductor device to The development of packaging miniaturization and high power density, on the other hand, reduces the difficulty of the packaging process of power semiconductor devices and reduces the packaging cost.
  • this paper also provides a detection circuit for detecting whether there is a short-circuit fault in the IGBT device with large current capacity shown in FIG. 2A and FIG. 2B .
  • FIG. 3 shows a schematic diagram of a detection circuit provided according to some embodiments of the present invention.
  • the detection circuit 31 of the IGBT device with large current capacity shown in FIG. 2A and FIG. 2B only includes one detection interface 311 .
  • the detection interface 311 is directly connected to the detection high-voltage pin 203 of the IGBT device with a large current capacity to detect whether there is a short-circuit fault in the IGBT elements accommodated in each transistor subunit 21-23 of the IGBT device with a large current capacity.
  • the detection process And the principle is basically the same as that of the prior art, and will not be repeated here.
  • the detection interface 311 of the detection circuit 31 is connected to the detection pin 203 of the IGBT device with a large current capacity to determine the short-circuit fault, and the detection pin 203 is connected to each transistor subunit 21-23.
  • the detection diode sub-unit 24 is integrated between the collectors of the IGBT components, and there is a voltage blocking effect on these collector terminals, and the detection interface 311 does not have the risk of bus high voltage or IGBT turn-off overvoltage. Therefore, the driver designer of the power semiconductor device does not need to configure an additional detection diode for the detection interface 311 of the detection circuit 31.
  • the detection circuit of the power semiconductor device can overcome the time-consuming and labor-intensive defects of the prior art, and on the other hand, it is beneficial to simplify the detection circuit of the power semiconductor device.
  • the structure of the device and its space volume are reduced, which is in line with the direction of miniaturization and high power density of the detection circuit.
  • the detection diode subunit 24 is further integrated in the package of the power semiconductor device, there is a voltage blocking effect on the collector terminals of the IGBT elements accommodated in each transistor subunit 21-23, and the potential on the detection pin 203 V 203 will not rise to the kV level with the potential V 209 of the high-voltage pins 205, 207, 209, but under normal working conditions, it is kept at about 5V and not more than 100V under the driving of the detection circuit. Therefore, the distance from the detection interface 311 of the detection circuit 31 in FIG.
  • the IGBT device with large current capacity including three transistor subunits 21-23 shown in FIG. 2A and FIG. It demonstrates the main idea of the present invention clearly and provides a specific solution for the public to implement, rather than limiting the protection scope of the present invention.
  • the above-mentioned power semiconductor device provided by the present invention may also be composed of a single silicon-based metal-oxide semiconductor field-effect transistor (Si-MOSFET), silicon carbide-based MOSFET (SiC-MOSFET), silicon Transistor devices such as silicon carbide-based IGBT (Si-IGBT) or silicon carbide-based IGBT (SiC-IGBT).
  • Si-MOSFET silicon-based metal-oxide semiconductor field-effect transistor
  • SiC-MOSFET silicon carbide-based MOSFET
  • Si-IGBT silicon carbide-based IGBT
  • SiC-IGBT silicon carbide-based IGBT
  • the single-transistor power semiconductor device may include a transistor subunit 41 , a detection diode subunit 42 and a pin subunit 43 .
  • a single transistor (eg, IGBT) element accommodated in the transistor subunit 41 includes a collector, an emitter, and a gate.
  • the collector is used to connect to the high-voltage bus as the high-voltage power terminal of the IGBT element.
  • the emitter is used for grounding or connecting the collector of the low-level IGBT component as the low-voltage power terminal of the IGBT component.
  • the collector of the IGBT element extends out of the package of the power semiconductor device to form a high voltage pin 405 of the power semiconductor device.
  • the emitter of the IGBT element extends out of the package of the power semiconductor device to form a low voltage pin 404 of the power semiconductor device.
  • the control terminal of the IGBT element extends out of the package of the power semiconductor device through the pin subunit 43 to form a control pin 402 of the power semiconductor device.
  • One or more diode elements are housed in the detection diode subunit 42 .
  • the cathode of the diode element is connected to the collector of the IGBT element of the transistor subunit 41 , and its anode extends out of the package of the power semiconductor device through the pin subunit 43 to form a detection pin 403 of the power semiconductor device.
  • the pin subunit 43 is also connected to the emitter of the IGBT element in the transistor subunit 41, and the emitter is drawn out from the pin subunit 43 to the package of the power semiconductor device to form a potential reference lead for the power semiconductor device.
  • the voltage reference pin 401 can serve as the auxiliary emitter of the IGBT element.
  • the detection circuit of the power semiconductor device can detect the short circuit of the power semiconductor device through the potential reference pin 401 , the control pin 402 and the detection pin 403 of the pin subunit 43 .
  • the driver designer of the power semiconductor device only needs to configure the signal processing circuit to realize the short circuit detection of the power semiconductor device, It is no longer necessary to select the type and layout of the diode device based on factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode, and can overcome the time-consuming and labor-intensive defects of the prior art.
  • the detection diode subunit 42 is further integrated in the package of the power semiconductor device, there is a voltage blocking effect on the collector terminal of the IGBT element accommodated in the transistor subunit 41, and the potential V 403 on the detection pin 403 It will not rise to the kV level with the potential of the high-voltage pin 405, but under normal working conditions, it will remain at about 5V and not exceed 100V under the driving of the detection circuit. Therefore, there will be no potential difference above 100V between the detection pin 403 in FIG. 4 and the potential reference pin 401 , the control pin 402 and the low voltage pin 404 .
  • the single-transistor power semiconductor device shown in FIG. 4 only involves the terminal voltage of one transistor element, and only needs to configure a detection interface to detect whether there is a short-circuit fault through its detection pin 403 .
  • technicians can select the fault detection circuit 31 shown in FIG. 3 and directly connect its detection interface 311 to the detection pin 403 of the single-transistor power semiconductor device to detect the single-transistor power semiconductor device.
  • the detection process and principle are basically the same as those of the prior art, and will not be repeated here.
  • the transistor sub-unit of the above-mentioned power semiconductor device provided by the first aspect of the present invention may further accommodate a plurality of transistor devices connected in series.
  • FIG. 5 shows a schematic diagram of a circuit package of a power semiconductor device provided according to some embodiments of the present invention.
  • the power semiconductor device may include a transistor subunit 51 , a detection diode subunit 52 and a pin subunit 53 .
  • the IGBT elements 511 and 512 respectively include a collector, an emitter and a gate.
  • the collector of the IGBT element 511 is used to connect to the high-voltage bus, as the high-voltage power terminal of the IGBT element 511 .
  • the emitter of the IGBT element 511 is connected to the collector of the low-level IGBT element 512 as a low-voltage power terminal of the IGBT element 511 .
  • the collector of the IGBT element 512 is connected to the emitter of the advanced IGBT element 511 as a high voltage power terminal of the IGBT element 512 .
  • the emitter of the IGBT element 512 is used for grounding as a low-voltage power terminal of the IGBT element 512 .
  • the collector of the IGBT element 511 extends out of the package of the power semiconductor device to form a high voltage pin 505 of the power semiconductor device.
  • the emitter of the IGBT element 512 extends out of the package of the power semiconductor device to form a low voltage pin 504 of the power semiconductor device.
  • the control terminal of the IGBT element 511 extends out of the package of the power semiconductor device through the pin subunit 53 to form an advanced control pin 5021 of the power semiconductor device.
  • the control terminal of the IGBT element 512 extends out of the package of the power semiconductor device through the pin subunit 53 to form a low-level control pin 5022 of the power semiconductor device.
  • the detection diode subunit 52 accommodates a plurality of detection diode units 521 , 522 .
  • the cathode of the detection diode unit 521 is connected to the collector of the corresponding IGBT element 511 in the transistor subunit 51 , and its anode extends out of the package of the power semiconductor device through the pin subunit 53 to form a detection pin 5031 of the power semiconductor device.
  • the cathode of the detection diode unit 522 is connected to the collector of the corresponding IGBT element 512 in the transistor subunit 51 , and its anode extends out of the package of the power semiconductor device through the pin subunit 53 to form a detection pin 5032 of the power semiconductor device.
  • the pin subunit 53 is also respectively connected to the emitters of the IGBT elements 511 and 512 in the transistor subunit 51, and these emitters are respectively led out from the pin subunit 53 to the package of the power semiconductor device to form the power semiconductor Potential reference pins 5011, 5012 of the device.
  • the voltage reference pins 5011, 5012 can serve as auxiliary emitters of the IGBT elements 511, 512, respectively.
  • the detection circuit of the power semiconductor device can detect the short circuit of the power semiconductor device through the potential reference pins 5011 , 5012 , the control pins 5021 , 5022 and the detection pins 5031 , 5032 of the pin subunit 53 .
  • the driver designer of the power semiconductor device only needs to configure the signal processing circuit to realize the short circuit detection of the power semiconductor device, It is no longer necessary to select the type and layout of the diode device based on factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode, and can overcome the time-consuming and labor-intensive defects of the prior art.
  • the detection diode subunit 52 is further integrated in the package of the power semiconductor device, there is a voltage blocking effect on the collector terminals of the IGBT elements 511 and 512 accommodated in the transistor subunit 51, and the detection pins 5031,
  • the potentials V 5031 and V 5032 on the 5032 will not rise to the kV level with the potential of the high-voltage pin 505, but under normal working conditions, they are kept at about 5V and not more than 100V under the driving of the detection circuit. Therefore, there will be no potential difference above 100V between the detection pins 5031 , 5032 , the potential reference pins 5011 , 5012 , the control pins 5021 , 5022 and the low voltage pin 504 in FIG. 5 .
  • this paper also provides a detection circuit for detecting whether there is a short-circuit fault in the half-bridge device shown in FIG. 5 .
  • FIG. 6 shows a schematic diagram of a detection circuit provided according to some embodiments of the present invention.
  • the detection circuit 61 of the half-bridge device shown in FIG. 5 includes two detection interfaces 611 , 612 .
  • the detection interface 611 is directly connected to the detection pin 5031 of the half-bridge device, so as to detect whether there is a short-circuit fault in the IGBT element 511 accommodated in the transistor subunit 51 of the half-bridge device.
  • the detection interface 612 is directly connected to the detection pin 5032 of the half-bridge device, so as to detect whether the IGBT element 512 accommodated in the transistor subunit 51 of the half-bridge device has a short-circuit fault.
  • the detection process and principle of the detection circuit 61 are basically the same as those of the prior art, and will not be repeated here.
  • the detection interfaces 611, 612 of the detection circuit 61 are connected to the detection pins 5031, 5032 of the half-bridge device to determine the short-circuit fault, and the detection pins 5031, 5032 are connected with the transistor subunit 51.
  • the detection diode sub-unit 52 is integrated between the collectors of each IGBT element 511, 512, and there is a voltage blocking effect on these collector terminals, and the detection interface 611, 612 does not have bus high voltage or IGBT turn-off overvoltage. risk. Therefore, the driver designer of the power semiconductor device does not need to configure additional detection diodes for the detection interfaces 611 and 612 of the detection circuit 61.
  • the device structure of the circuit and its space volume are reduced, which conforms to the direction of miniaturization and high power density of the detection circuit.
  • the detection diode subunit 52 is further integrated in the package of the power semiconductor device, there is a voltage blocking effect on the collector terminals of the IGBT elements 511 and 512 accommodated in the transistor subunit 51, and each detection pin 5031, The potentials V 5031 and V 5032 on the 5032 will not rise to the kV level with the potential of the high-voltage pin 505, but under normal working conditions, driven by the detection circuit, they remain at about 5V, not exceeding 100V. Therefore, the distance between the detection interfaces 611, 612 of the detection circuit 61 in FIG.
  • the power semiconductor device may include a plurality of transistor subunits 71 - 73 , a detection diode subunit 74 and a pin subunit 75 .
  • Two series-connected transistor (for example: IGBT) elements 711-712, 721-722, 731-732 accommodated in each transistor sub-unit 71-73 respectively form a bridge arm circuit, and these three bridge arm circuits are connected in parallel to form a single-phase bridge device.
  • Each of the IGBT elements 711 to 712, 721 to 722, and 731 to 732 includes a collector, an emitter, and a gate, respectively.
  • the collector electrodes of the IGBT elements 711 , 721 , 731 are used to connect to the high-voltage bus bar, so as to serve as the high-voltage power terminals of the respective IGBT elements 711 , 721 , 731 .
  • the emitters of the IGBT elements 711 , 721 , 731 are respectively connected to the collectors of the corresponding low-level IGBT elements 712 , 722 , 732 to serve as the low-voltage power terminals of the IGBT elements 711 , 721 , 731 .
  • the collectors of the IGBT elements 712 , 722 , 732 are respectively connected to the emitters of the corresponding advanced IGBT elements 711 , 721 , 731 to serve as high-voltage power terminals of the IGBT elements 712 , 722 , 732 .
  • the emitters of the IGBT elements 712 , 722 , 732 are grounded to serve as the low-voltage power terminals of the respective IGBT elements 712 , 722 , 732 .
  • the collectors of the IGBT elements 711, 721, 731 respectively extend out of the package of the power semiconductor device from the corresponding transistor sub-units 71-73 to form a plurality of high voltage pins 705, 707, 709 of the power semiconductor device.
  • the emitters of the IGBT elements 712 , 722 , 732 respectively extend out of the package of the power semiconductor device from the corresponding transistor subunits 71 - 73 to form a plurality of low voltage pins 704 , 706 , 708 of the power semiconductor device.
  • the control terminals of the IGBT elements 711, 721, and 731 in the transistor subunits 71-73 are connected inside the transistor subunit 71, and extend out of the package of the power semiconductor device through the pin subunit 75 to form an advanced control lead of the power semiconductor device.
  • the control terminals of the IGBT elements 712, 722, and 732 in the transistor subunits 71-73 are connected inside the transistor subunit 71, and extend out of the package of the power semiconductor device through the pin subunit 75 to form the low-level control leads of the power semiconductor device.
  • the detection diode subunit 74 accommodates a plurality of detection diode units 721 , 722 .
  • the cathode of the detection diode unit 721 is connected to the collector of the corresponding IGBT element 711 in the transistor subunit 71 , and its anode extends out of the package of the power semiconductor device through the pin subunit 75 to form a detection pin 7031 of the power semiconductor device.
  • the cathode of the detection diode unit 722 is connected to the collector of the corresponding IGBT element 712 in the transistor subunit 71 , and its anode extends out of the package of the power semiconductor device through the pin subunit 75 to form a detection pin 7032 of the power semiconductor device.
  • the pin subunit 75 is also respectively connected to the emitters of the IGBT elements 711, 721, and 731 in the transistor subunits 71-73, and these emitters are drawn out from the pin subunit 75 to the package of the power semiconductor device to form The advanced potential reference pin 7011 of the power semiconductor device.
  • the voltage reference pin 7011 can serve as an auxiliary emitter of the IGBT elements 711 , 721 , 731 .
  • the pin subunit 75 is also respectively connected to the emitters of the IGBT elements 712, 722, and 732 in the transistor subunits 71-73, and these emitters are led out from the pin subunit 75 to the package of the power semiconductor device to form the power Low-level potential reference pin 7012 of the semiconductor device.
  • the voltage reference pin 7012 can serve as an auxiliary emitter for the IGBT elements 712 , 722 , 732 .
  • the detection circuit of the power semiconductor device can detect the short circuit of the power semiconductor device through the potential reference pins 7011, 7012, the control pins 7021, 7022 and the detection pins 7031, 7032 of the pin subunit 75.
  • the driver designer of the power semiconductor device only needs to configure the signal processing circuit to realize the short circuit detection of the power semiconductor device, It is no longer necessary to select the type and layout of the diode device based on factors such as the withstand voltage, electrical separation distance and creepage distance of the detection diode, and can overcome the time-consuming and labor-intensive defects of the prior art.
  • the detection diode sub-unit 74 is further integrated in the package of the power semiconductor device, there are The effect of voltage blocking, the potentials V 7031 and V 7032 on the detection pins 7031 and 7032 will not rise to the kV level with the potential of the high-voltage pin 709, but will remain at Around 5V, not more than 100V. Therefore, there will be no potential difference above 100V between the detection pins 7031 , 7032 and the potential reference pin 701 , the control pins 7021 , 7022 and the low voltage pins 704 , 706 , 708 in FIG. 7 .
  • the single-phase bridge device shown in FIG. 7 involves terminal voltages of two-stage transistor elements, and two detection interfaces need to be configured to detect whether there is a short circuit fault through its detection pins 7031 and 7032 .
  • technicians can select the fault detection circuit 61 shown in FIG. 6, and connect its detection interfaces 611 and 612 to the detection pins 7031 and 7032 of the single-phase bridge device respectively to detect the single-phase bridge device Whether the IGBT elements 711-712, 721-722, 731-732 accommodated in the transistor sub-units 71-73 have a short-circuit fault, the detection process and principle are basically the same as those of the prior art, and will not be repeated here.
  • the power semiconductor device provided by the present invention may also include a multi-phase bridge device with multiple bridge arm circuits, including but not limited to an H-bridge device and a three-phase bridge device.
  • a multi-phase bridge structure each bridge arm is independent, and each transistor device has its own independent detection diode unit.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Conversion In General (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs de puissance. Le dispositif à semi-conducteurs de puissance comprend : au moins un élément transistor, l'élément transistor comprenant une extrémité de puissance haute-tension, une extrémité de puissance basse-tension, et une extrémité de commande, l'extrémité de puissance haute-tension s'étendant hors d'un boîtier du dispositif à semi-conducteurs de puissance pour former une broche haute-tension du dispositif à semi-conducteurs de puissance, l'extrémité de puissance basse-tension s'étendant hors du boîtier du dispositif à semi-conducteurs de puissance pour former une broche basse-tension du dispositif à semi-conducteurs de puissance, et l'extrémité de commande s'étendant hors du boîtier du dispositif à semi-conducteurs de puissance pour former une broche de commande du dispositif à semi-conducteurs de puissance ; et au moins une unité de diode de détection, une cathode de l'unité de diode de détection étant connectée à l'extrémité de puissance haute-tension du ou des éléments transistors, et une anode de l'unité de diode de détection s'étendant hors du boîtier du dispositif à semi-conducteurs de puissance pour former une broche de détection du dispositif à semi-conducteurs de puissance.
PCT/CN2021/130401 2021-06-29 2021-11-12 Dispositif à semi-conducteurs de puissance WO2023273099A1 (fr)

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CN116032101A (zh) * 2023-02-27 2023-04-28 合肥惟新数控科技有限公司 一种智能功率模块拓扑驱动控制结构

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CN101908788A (zh) * 2009-06-05 2010-12-08 苏州能健电气有限公司 风力发电机变桨用变频交流电机及其驱动系统
CN102361319A (zh) * 2011-10-25 2012-02-22 杭州日鼎控制技术有限公司 基于驱动芯片的igbt短路保护检测电路
CN205123571U (zh) * 2015-10-20 2016-03-30 长沙广义变流技术有限公司 一种双向斩波器
CN210297240U (zh) * 2019-06-25 2020-04-10 徐州中矿大传动与自动化有限公司 一种igbt短路故障快速保护电路

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JP2002208847A (ja) * 2001-01-12 2002-07-26 Fuji Electric Co Ltd 電力用半導体素子のゲート駆動回路
CN101908788A (zh) * 2009-06-05 2010-12-08 苏州能健电气有限公司 风力发电机变桨用变频交流电机及其驱动系统
CN102361319A (zh) * 2011-10-25 2012-02-22 杭州日鼎控制技术有限公司 基于驱动芯片的igbt短路保护检测电路
CN205123571U (zh) * 2015-10-20 2016-03-30 长沙广义变流技术有限公司 一种双向斩波器
CN210297240U (zh) * 2019-06-25 2020-04-10 徐州中矿大传动与自动化有限公司 一种igbt短路故障快速保护电路

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Publication number Priority date Publication date Assignee Title
CN116032101A (zh) * 2023-02-27 2023-04-28 合肥惟新数控科技有限公司 一种智能功率模块拓扑驱动控制结构

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