WO2023236662A1 - 外腔半导体激光器及反射式半导体光学放大器的芯片集成 - Google Patents

外腔半导体激光器及反射式半导体光学放大器的芯片集成 Download PDF

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WO2023236662A1
WO2023236662A1 PCT/CN2023/088891 CN2023088891W WO2023236662A1 WO 2023236662 A1 WO2023236662 A1 WO 2023236662A1 CN 2023088891 W CN2023088891 W CN 2023088891W WO 2023236662 A1 WO2023236662 A1 WO 2023236662A1
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Prior art keywords
waveguide
optical
rsoa
channel
chip
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PCT/CN2023/088891
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English (en)
French (fr)
Inventor
李若林
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珠海映讯芯光科技有限公司
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Publication of WO2023236662A1 publication Critical patent/WO2023236662A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Definitions

  • the invention relates to chip integration of an external cavity semiconductor laser and a reflective semiconductor optical amplifier.
  • CMOS-based silicon semiconductor platforms The development trend of photonic integrated chips is the shift to CMOS-based silicon semiconductor platforms.
  • the specific representative is silicon photonics technology, which uses CMOS semiconductor processes and technologies on silicon wafers to achieve high-performance, low-cost optical devices. Large-scale integration and manufacturing.
  • SOA semiconductor Optical Amplifier
  • semiconductor optical amplifier is an essential core component in many application scenarios.
  • optical communications in order to ensure that the emitted laser signal reaches a certain power intensity, the optical power emitted by the laser is amplified.
  • New applications such as lidar and long-distance photon sensing require semiconductor lasers to maintain high spectral purity such as single mode and high coherence, while also placing higher requirements on laser power.
  • SOA is used to amplify laser light intensity or optical signal, light generally enters from one port of SOA, is amplified, and then outputs from another port. At this time, SOA is running in transmission mode, and the amplified laser is in The optical path is connected in series.
  • One way is to use it as an independent component with input and output optical fiber interfaces.
  • a certain transmission node is connected to the optical fiber network to amplify the incident light.
  • the early indium phosphide chip (such as 1550nm laser and amplifier) technology is to integrate the semiconductor laser and SOA growth on the same compound semiconductor substrate chip. Its characteristic is that the light emitted by the laser is transmitted to the SOA through the optical waveguide and directly amplified. Send it out again.
  • the integration of compound semiconductor light-emitting chips or functions into silicon photonic chips is generally achieved through hybrid integration.
  • the representative method is to flip-chip the compound semiconductor optical amplifier chip on the silicon optical chip, and through optical evanescent wave coupling, the light transmitted in the waveguide of the photonic integrated chip is coupled to the waveguide channel of the SOA, and is amplified by the SOA. It is then coupled to the optical waveguide of the silicon photonic chip for continued transmission.
  • SOA operates in transmission mode.
  • the compound semiconductor SOA chip becomes silicon-based.
  • the integration of chips requires multiple etchings, which has strict process requirements. Due to yield and other reasons, the implementation cost is very expensive.
  • the object of the present invention is to provide a chip integration of an external cavity semiconductor laser and a reflective semiconductor optical amplifier, which can achieve high optical power and high coherent output of a high-performance single-mode laser, and can be integrated with a passive photonic chip through a simple docking process. To achieve hybrid integration.
  • a chip integration of an external cavity semiconductor laser and a reflective semiconductor optical amplifier which is characterized in that it consists of an active RSOA chip equipped with an RSOA channel and a passive photon equipped with an optical waveguide
  • the chip is coupled and integrated through the RSOA channel and the optical waveguide.
  • the coupling end surface of the active RSOA chip and the passive photonic chip is coated with an optical anti-reflective film.
  • the other end surface of the active RSOA chip is coated with an optical high-reflective film.
  • the optical waveguide of the passive photonic chip is provided with a waveguide phase control area, a waveguide filter feedback area and a waveguide optical coupler.
  • the waveguide phase control area and the waveguide filter feedback area are both equipped with electrodes for changing the refractive index of the optical waveguide, so
  • the RSOA channel includes a gain RSOA channel for optical gain and an amplification RSOA channel for optical amplification to form a reflective semiconductor optical amplifier.
  • An external cavity semiconductor laser is constituted. The light emitted by the external cavity semiconductor laser is transmitted through the optical waveguide and coupled to the amplification RSOA channel for amplification, and then is reflected and coupled back to the optical waveguide of the passive photonic chip by the highly reflective film of the amplification RSOA channel.
  • the amplified RSOA channel of the present invention serves as both optical gain feedback and an amplifier to achieve optical amplification.
  • a waveguide phase control area is added to the two optical waveguides connected to the RSOA channel, so that the light amplified by the RSOA channel and the light emitted by the external cavity semiconductor laser are superimposed in a coherent manner. While the light intensity is amplified, Maintain light coherence.
  • multiple reflective semiconductor optical amplifier (RSOA) channels are coupled to corresponding optical waveguides in the passive photonic integrated chip using simple side docking to form an external cavity semiconductor laser while achieving reflective light amplification.
  • RSOA reflective semiconductor optical amplifier
  • the external cavity filter feedback area of the external cavity semiconductor laser is wavelength-tunable, and the laser output can achieve wavelength tunability and high optical power; in other embodiments, by adjusting the external cavity
  • the selection of the external cavity filter feedback area of the semiconductor laser and the selection of the coupler for the optical connection of the amplified ROSA channel can achieve power amplification while achieving a wide range of laser wavelength tunability.
  • the active RSOA chip of the present invention may be a single chip containing multiple RSOA channels, or may include multiple single chips, each single chip containing one or more RSOA channels.
  • a waveguide phase control area is provided on the optical waveguide connecting the external cavity semiconductor laser and the amplified RSOA channel to ensure in-phase coherent transmission of light between the two.
  • the invention is provided with a waveguide phase control area between the amplified RSOA channel and the external cavity semiconductor laser connected optical path or multiplexed output to ensure phase coherence of the output light after optical path multiplexing.
  • the amplified RSOA channel and external cavity semiconductor laser of the present invention realize optical transmission and coupling through a waveguide optical coupler or a ring resonator.
  • the wavelength of the waveguide filter feedback area of the external cavity semiconductor laser of the present invention is adjustable.
  • the external cavity semiconductor laser can realize wavelength tuning under high power output.
  • the waveguide filter feedback area is a waveguide reflection grating or is composed of multiple ring resonators.
  • the waveguide reflection grating of the present invention is a waveguide sampling reflection grating or a waveguide superstructure grating.
  • the waveguide sampling reflection grating or waveguide superstructure grating is tunable, the ring of light transmission between the amplified RSOA channel and the external cavity semiconductor laser
  • a composite cavity wavelength-tunable laser is formed between the gain RSOA channel and the optical high-reflection film that amplifies the RSOA channel, and the gain of the two RSOA channels is the center wavelength of the emission spectrum.
  • a composite cavity tunable laser can achieve a wide wavelength tuning range while ensuring high laser power output.
  • Both end surfaces of the passive photonic chip of the present invention are coated with optical anti-reflection films.
  • the docking coupling port of the RSOA channel and the optical waveguide of the present invention is provided with a waveguide mode converter (optical waveguide taper) to ensure optimal optical coupling efficiency between the optical waveguide and the RSOA channel.
  • a waveguide mode converter optical waveguide taper
  • a right angle is formed between the optical waveguide of the RSOA channel of the present invention and the end surface provided with the optical high-reflective film to ensure efficient reflection coupling.
  • the waveguide optical coupler of the present invention is a spectroscopic coupler with a fixed splitting ratio or an adjustable splitting coupler with dual ports in which the splitting ratio between two waveguides can be changed.
  • the present invention has the following significant effects:
  • the amplified RSOA channel of the present invention serves both as optical gain feedback and as an amplifier to achieve optical amplification.
  • a waveguide phase control area is added to the two optical waveguides connected to the RSOA channel, so that the light amplified by the RSOA channel and the light emitted by the external cavity semiconductor laser are superimposed in a coherent manner. While the light intensity is amplified, Maintain light coherence.
  • the present invention uses a reflective semiconductor optical amplifier RSOA channel to achieve light amplification. With the same channel length, the photon amplification stroke can be doubled.
  • the optical waveguide of the RSOA channel and the passive photonic chip of the present invention realizes light amplification through end-face coupling. Compared with the active and passive chip solutions through evanescent wave coupling, it can flexibly achieve higher coupling efficiency and greatly simplify Integrated process and reduced costs.
  • the present invention has phase control in the optical waveguide between the external cavity semiconductor laser and the amplified RSOA channel to ensure coherent transmission of light between the two.
  • the present invention has a phase control area between the amplified RSOA channel and the combined output of the external cavity semiconductor laser to ensure the phase coherence of the output light after combining.
  • the external cavity semiconductor laser when the waveguide filter feedback area of the external cavity semiconductor laser is wavelength adjustable, the external cavity semiconductor laser can achieve wavelength tuning under high power output.
  • the waveguide filter feedback area of the external cavity laser is a sampled reflection grating (sampled grating) or waveguide super-structure grating (super-structure grating) and the wavelength is adjustable
  • the gap between the amplified RSOA channel and the external cavity semiconductor laser combined output
  • the ring resonator or waveguide optical coupler is wavelength tunable, a composite cavity large-range tunable laser is formed between the highly reflective end faces of the two RSOA channels. If the center wavelengths of the emission spectra of the two RSOA channels are different, such a composite cavity wide-range tunable laser can achieve flat high-power output in a large wavelength range and a larger wavelength tuning range.
  • Figure 1 is a schematic diagram of the composition and structure of Embodiment 1 of the present invention.
  • Figure 2 is a schematic diagram of the spectral curve of Embodiment 1 of the present invention.
  • FIG. 3 is a schematic structural diagram of Embodiment 2 of the present invention.
  • FIG. 4 is a schematic structural diagram of Embodiment 3 of the present invention.
  • FIG. 5 is a schematic structural diagram of Embodiment 4 of the present invention.
  • FIG. 6 is a schematic structural diagram of Embodiment 5 of the present invention.
  • Figure 7 is a schematic diagram of the spectral curve of Embodiment 5 of the present invention.
  • Figure 8 is a schematic structural diagram of Embodiment 6 of the present invention.
  • Figure 9 is one of the schematic diagrams of the spectral curves of Embodiment 6 of the present invention.
  • Figure 10 is the second schematic diagram of the spectral curve of Example 6 of the present invention.
  • FIG. 1 it is a chip integration of an external cavity semiconductor laser and a reflective semiconductor optical amplifier according to the present invention. It consists of an active RSOA chip 203 with RSOA channels 202 and 209 and a passive photon chip with an optical waveguide.
  • the chip 206 is coupled and integrated through the RSOA channel and the optical waveguide.
  • the RSOA channels 202 and 209 serve as reflective semiconductor optical amplifiers, and the right end face 210 of the active RSOA chip 203 (the coupling end face of the active RSOA chip 203 and the passive photonic chip 206) It is coated with an optical anti-reflective film, and the other end surface (left end surface 201 ) of the active RSOA chip 203 is coated with an optical high-reflective film.
  • the active RSOA chip 203 can be made of common compound semiconductor materials such as III-V group InP series.
  • the RSOA channels 202 and 209 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • the left end surface 215 and the right end surface 216 of the passive photonic chip 206 are coated with an optical anti-reflection film.
  • the optical waveguide of the passive photonic chip 206 is provided with a waveguide phase control area 205 (Phase Control or PC), a waveguide filter feedback area 207 (Cavity Mirror or CM), a waveguide optical coupler 212 and a waveguide phase control area 213, wherein, The waveguide phase control area 205 and the waveguide filter feedback area 207 are located on the optical waveguide 204, and the waveguide phase control area 213 is located on the optical waveguide 208.
  • the optical waveguide 204 is butt-coupled with the RSOA channel 202 of the active RSOA chip 203.
  • the waveguide phase control area 205 and the waveguide filter feedback area 207 are both provided with electrodes for changing the refractive index of the waveguide.
  • the RSOA channel 202 is a gain RSOA channel for optical gain
  • the RSOA channel 209 is an amplification RSOA channel for optical amplification, which constitute a reflective semiconductor optical amplifier.
  • the highly reflective end face (left end face 201) of the RSOA channel 202, the RSOA channel 202, the optical waveguide 204, the waveguide phase control area 205 and the waveguide filter feedback area 207 constitute an external cavity semiconductor laser, in which the RSOA channel 202 serves as the gain of the external cavity semiconductor laser. area and provide a photon source.
  • the light emitted by the external cavity semiconductor laser is transmitted through the optical waveguide and coupled to the amplification RSOA channel for amplification. It is then reflected by the highly reflective film of the amplification RSOA channel and coupled back to the optical waveguide of the passive photonic chip. It is transmitted along the waveguide 214 and ends on the right end face 216 Shoot out.
  • the waveguide filter feedback area 207 can be a waveguide Bragg reflection grating, or a reflection feedback area composed of two or more ring resonators.
  • optical waveguide 211 and the RSOA channel 209 are butt coupled.
  • the optical waveguides 204 and 211 are provided with waveguide mode converters (Optical Waveguide Taper) at the docking coupling ports with the RSOA channels 202 and 209 to ensure the best optical coupling efficiency between them and the corresponding RSOA channels.
  • waveguide mode converters Optical Waveguide Taper
  • a right angle is formed between the optical waveguides of the RSOA channels 202 and 209 and the left end surface 201 to ensure efficient reflection coupling.
  • a small angle can be formed between the optical waveguides of the RSOA channels 202 and 209 and the right end surface 210 to avoid interference caused by light reflection from the right end surface 210 back to the ROSA channels 202 and 209.
  • the light generated by the external cavity semiconductor laser enters the RSOA channel 209 through the optical waveguide 208, the waveguide optical coupler 212 and the optical waveguide 211. It first undergoes left amplification, then is reflected by the left end face 201 of the RSOA channel 209, and then goes right to undergo secondary amplification. Coupled back to optical waveguide 211. After the amplified light passes through the 1x2 waveguide optical coupler 212, one path of light is transmitted through the optical waveguide 214 and emerges from the right end surface 216 of the passive photonic chip 206; the other path of light returns to the external cavity semiconductor laser through the optical waveguide 208 and is filtered and fed back in the waveguide.
  • phase control area 213 is used to ensure that the two parts of light have the same phase (ie, adjust the phase of light transmission between the RSOA channels 202 and 209, with a difference of an integer multiple of 360 degrees).
  • the metal electrodes are used to change the refractive index of the corresponding covered part of the waveguide and control the phase by changing the optical path.
  • the temperature of the metal electrode is changed by heating, resulting in a thermo-optical effect that changes the refractive index of the waveguide; the current on the metal electrode can also be changed to change the refractive index of the waveguide through the electro-optical effect.
  • the 1x2 waveguide optical coupler 212 may be a splitting coupler with a fixed splitting ratio, or an adjustable splitting coupler with a dual port in which the splitting ratio between the two waveguides can be changed.
  • the waveguide filter feedback area 207 may be a waveguide Bragg reflection grating, or may be a reflection feedback area composed of multiple ring resonators.
  • the broadband gain spectra 220 and 221 of the RSOA channels 202 and 209, the reflection spectrum 222 of the waveguide filter feedback area 207 on the passive photonic chip optical waveguide, and the constituting laser emission spectrum line 223 belong to the same chip.
  • the broadband gain spectra 220 and 221 of the RSOA channels 202 and 209 are very similar.
  • this embodiment includes an active RSOA chip 232 and a passive photonic chip 235.
  • the active RSOA chip 232 contains reflective semiconductor optical amplifier RSOA channels 231 and 238. Its left end face 230 is coated with an optical high-reflective film, and its right end face 239 is coated with an optical anti-reflective film.
  • the active RSOA chip 232 may be made of common compound semiconductor materials such as III-V group InP series.
  • the RSOA channels 231, 238 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • the optical waveguide 233 is butt-coupled with the RSOA channel 231 of the active RSOA chip.
  • the optical waveguide 233 has a waveguide phase control area 234 and a waveguide filter feedback area 236.
  • the left end face 230 of the RSOA channel 231, the RSOA channel 231, the waveguide 233, the waveguide phase control area 234 and the waveguide filter feedback area 236 constitute an external cavity semiconductor laser, in which the RSOA channel 231 serves as the gain area of the external cavity semiconductor laser and provides a photon source.
  • the waveguide filter feedback area 236 may be a waveguide Bragg reflection grating, or a reflection feedback area composed of multiple ring resonators.
  • Optical waveguide 240 and RSOA channel 238 are butt coupled.
  • the docking coupling ports of the optical waveguides 233 and 240 and the RSOA channels 231 and 238 are provided with waveguide mode converters to ensure optimal optical coupling efficiency between them and the corresponding RSOA channels.
  • a right angle is formed between the optical waveguides of the RSOA channels 238 and 231 and the left end face 230 to ensure efficient return coupling of the light reflected by the left end face.
  • a small angle can be formed between the optical waveguides of the RSOA channels 238 and 231 and the right end surface 239 to prevent light reflection from the right end surface 239 from returning to the ROSA channels 231 and 238.
  • the waveguide optical coupler 242 After the light generated by the external cavity semiconductor laser is transmitted through the waveguide optical coupler 242, it is divided into two paths. One path passes through the optical waveguide 237 and is directly emitted from the right end of the passive photonic chip 235; the other path enters the RSOA channel 238 through the optical waveguide 240 and first passes through It amplifies in the left direction, is reflected by the left end face 230 of the RSOA channel 238, then undergoes secondary amplification in the right direction, and is coupled back to the optical waveguide 240. This amplified light passes through the 1x2 waveguide light The optical coupler 242 transmits it to the waveguide filter feedback area 236.
  • part of the light is transmitted through the waveguide filter feedback area 236 and enters the external cavity semiconductor laser 231, 233, 234 for gain amplification, and then returns and is transmitted along the optical waveguide 233. Another part of the light is reflected by the waveguide filter feedback area 236 and then returned. After these two parts of light pass through the waveguide optical coupler 242, part of the light is directly emitted from the right end of the passive photonic chip 235 along the optical waveguide 237, and the other part enters the RSOA channel 238 through the optical waveguide 240 for amplification, completing a cyclic amplification process.
  • the waveguide phase control area 241 is used to ensure that the light transmitted between the two RSOA has the same phase (that is, the phase of the light amplification between the external cavity semiconductor laser and the RSOA 238 is adjusted to an integer multiple of 360 degrees).
  • the waveguides in the waveguide phase control areas 234 and 241 are equipped with local metal electrodes.
  • the metal electrodes are used to change the refractive index of the corresponding covered part of the waveguide and control the phase by changing the optical path.
  • the temperature of the metal electrode is changed by heating, resulting in a thermo-optical effect that changes the refractive index of the waveguide; the current on the metal electrode can also be changed to change the refractive index of the waveguide through the electro-optical effect.
  • the 1x2 waveguide optical coupler can be a fixed splitting ratio splitting coupler, or a dual-port adjustable splitting coupler where the splitting ratio between the two waveguides can be changed.
  • the waveguide filter feedback area 236 may be a waveguide Bragg reflection grating, or a reflection feedback area composed of multiple ring resonators.
  • wavelength tuning of the external cavity laser under high power output can be achieved.
  • this embodiment includes an active RSOA chip 303 and a passive photonic chip 308.
  • the active RSOA chip 303 contains reflective semiconductor optical amplifier RSOA channels 302 and 312. Its left end face 301 is coated with an optical high-reflective film, and its right end face 313 is coated with an optical anti-reflective film.
  • the active RSOA chip 303 can be made of common compound semiconductor materials such as III-V group InP series.
  • the RSOA channels 302 and 312 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • the optical waveguide 304 is butt coupled with the RSOA channel 302 of the active RSOA chip, and the optical waveguide 304 is There is a waveguide phase control area 305 and a waveguide filter feedback area 307; the left end face 301 of the RSOA channel 302, the RSOA channel 302, the optical waveguide 304, the waveguide phase control area 305 and the waveguide filter feedback area 307 constitute an external cavity semiconductor laser, in which the RSOA channel 302 It serves as the gain of the external cavity semiconductor laser and provides a photon source.
  • the waveguide filter feedback area 307 can be a waveguide Bragg reflection grating, or a reflection feedback area composed of two or more ring resonators.
  • the optical waveguide 314 and the RSOA channel 312 are butt coupled.
  • the optical waveguide 314 is coupled to the optical waveguide 316 and the optical waveguide 309 respectively via the waveguide optical coupler 315.
  • the docking coupling ports of the optical waveguides 304 and 314 and the RSOA channels 302 and 312 have waveguide mode converters (optical waveguide tapers) to ensure optimal optical coupling efficiency between them and the corresponding RSOA channels.
  • a right angle is formed between the optical waveguides of the RSOA channels 302 and 312 and the left end face 301 to ensure efficient return coupling of the light reflected by the left end face.
  • a certain angle can be formed between the optical waveguides of the RSOA channels 302 and 312 and the right end surface 313 to prevent the reflected light from the right end surface 313 from returning to the ROSA channels 302 and 312 to cause interference.
  • the light generated by the external cavity semiconductor laser 301, 302, 304, 305, 307 is transmitted along the optical waveguide 304 to the waveguide optical coupler 310, it is divided into two paths, one path is transmitted along the optical waveguide 311, and then the light amplified by the waveguide optical coupler 318 and the RSOA channel 312 is combined.
  • the right end 320 of the source photonic chip 308 emits, and the waveguide phase control area 317 ensures that the combined light has the same phase (that is, the light amplified by the RSOA channel 312 is adjusted to have the same phase as the light amplified by the direct luminescence combined output of the external cavity laser) .
  • the other path enters the RSOA channel 312 along the optical waveguide 309, the waveguide phase control area 306, and the waveguide 314. It first undergoes left amplification, is reflected at the left end face 301 of the RSOA channel 312, and then is right amplified and coupled back to the optical waveguide 314. After the amplified light passes through the 1x2 waveguide optical coupler 315, part of it is transmitted along the optical waveguide 316 and passes through the waveguide phase control area 317. At the waveguide optical coupler 318, it is combined with the light transmitted from the optical waveguide 311 and along the passive photonic chip 308 The right end of the shot.
  • the other light returns to the external cavity semiconductor laser along the optical waveguide 309, and is partially reflected back to the original path by the waveguide feedback filtering area 307 at the waveguide feedback filtering area 307.
  • the other part of the light enters the external cavity semiconductor laser 301 through the waveguide feedback filtering area 307. , 302, 304, 305, 307, and are gain amplified in the RSOA channel 302, and then transmitted along the optical waveguide 304; the waveguide phase control area 306 is used to ensure that the two parts of light have the same phase (i.e., adjust the external cavity
  • the phase difference of the light amplification between the semiconductor laser and the RSOA channel 312 is an integral multiple of 360 degrees).
  • This part of the light will continue to be split by the waveguide optical coupler 310, and part of it will be transmitted to the RSOA channel 312 along the optical waveguide 309 for amplification, completing a cyclic amplification process; the other part will be transmitted by the passive photonic chip 308 through the optical waveguide 311 and the waveguide optical coupler 318.
  • the right end of the shot will continue to be split by the waveguide optical coupler 310, and part of it will be transmitted to the RSOA channel 312 along the optical waveguide 309 for amplification, completing a cyclic amplification process; the other part will be transmitted by the passive photonic chip 308 through the optical waveguide 311 and the waveguide optical coupler 318. The right end of the shot.
  • the optical waveguides in the waveguide phase control areas 305, 306, and 317 are equipped with local metal electrodes.
  • the metal electrodes are used to change the refractive index of the corresponding covered portion of the waveguide and control the phase by changing the optical path.
  • Heat changes the temperature, producing a thermo-optical effect to change the refractive index of the waveguide; it can also change the current on the metal electrode to change the refractive index of the waveguide through the electro-optical effect.
  • the 1x2 waveguide optical couplers 310, 315, and 318 may be spectroscopic couplers with a fixed splitting ratio, or they may be adjustable splitting couplers with dual ports in which the splitting ratio between the two waveguides can be changed.
  • the waveguide feedback filtering area 307 may be a waveguide Bragg reflection grating, or a reflection feedback area composed of multiple ring resonators.
  • wavelength tuning of the external cavity semiconductor laser under high power output can be achieved.
  • this embodiment includes an active RSOA chip 403 and a passive photonic chip 406.
  • the active RSOA chip 403 contains reflective semiconductor optical amplifier RSOA channels 402 and 412. Its left end face 401 is coated with an optical high-reflective film, and its right end face 413 is coated with an optical anti-reflective film.
  • the active RSOA chip 403 can be made of common compound semiconductor materials such as III-V group InP series.
  • the RSOA channels 402 and 412 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • the optical waveguide 404 and the RSOA channel 402 are butt coupled, and the optical waveguide 414 and the RSOA channel 412 are butt coupled.
  • the optical waveguide 414 is connected to the optical waveguide 416, the waveguide phase control area 417 and the waveguide filter feedback area 418 through a waveguide optical coupler 415.
  • the optical waveguides 404 and 414 can have waveguide mode converters (optical waveguide tapers) at their docking coupling ports with the RSOA channels 402 and 412 to ensure optimal optical coupling efficiency between them and the corresponding RSOA channels.
  • a right angle is formed between the optical waveguides of the RSOA channels 402 and 412 and the left end face 401 to ensure efficient return coupling of the light reflected by the left end face.
  • a certain angle can be formed between the optical waveguides of the RSOA channels 402 and 412 and the right end surface 413 to prevent the reflected light from the right end surface 413 from returning to the ROSA channels 402 and 412 to cause interference.
  • the light emitted from the RSOA channel 412 passes through the waveguide optical coupler 415 along the optical waveguide 414 and is divided into two paths: one path propagates along the optical waveguide 416 through the waveguide phase control area 417 to the waveguide filter feedback area 418, and in the waveguide filter feedback area 418 , a part of the light passes through the waveguide filter feedback area 418 and continues to propagate to the right along the optical waveguide 416, and the remaining part is reflected by the waveguide filter feedback area 418 and returns to the RSOA channel 412 along the original path.
  • the left end face 401 of the RSOA channel 412, the RSOA channel 412, the optical waveguide 414, the waveguide optical coupler 415, the optical waveguide 416, the waveguide phase control area 417 and the waveguide filter feedback area 418 constitute the external cavity half.
  • the other light is coupled to the optical waveguide 404 along the optical waveguide 407 through the 1x2 waveguide optical coupler 408, and then is transmitted into the RSOA channel 402.
  • phase control area 405 ensures that the light reflected back by the RSOA channel 402 has the same phase as the intra-cavity laser after reaching the RSOA channel 412 (that is, adjusting the phase of light transmission between the external cavity laser and the RSOA channel 402, with a difference of an integer multiple of 360 degrees.
  • the other path along the optical waveguide 409 passes through the waveguide phase control area 410 and combines the light waves emitted by the 2x1 waveguide optical coupler 411 and the external cavity semiconductor laser that propagate along the optical waveguide 416 and emit from the right end surface 420 of the passive photonic chip.
  • the waveguide phase control area 410 ensures that the combined light has the same phase, that is, the phase of the light amplified by the RSOA channel 412 and the direct light-emitting combined output of the external cavity semiconductor laser is adjusted.
  • the waveguide feedback filtering area 418 may be a waveguide Bragg reflection grating, or a reflection feedback area composed of multiple ring resonators.
  • the optical waveguides in the waveguide phase control areas 405, 410, and 417 are equipped with local metal electrodes.
  • the metal electrodes are used to change the refractive index of the corresponding covered part of the waveguide and control the phase by changing the optical path.
  • the temperature of the metal electrode is changed by heating, resulting in a thermo-optical effect that changes the refractive index of the waveguide; the current on the metal electrode can also be changed to change the refractive index of the waveguide through the electro-optical effect.
  • the 1x2 waveguide optical couplers 408, 411, and 415 may be spectroscopic couplers with a fixed splitting ratio, or they may be adjustable splitting couplers with dual ports in which the splitting ratio between the two waveguides can be changed.
  • wavelength tuning of the external cavity laser under high power output can be achieved.
  • this embodiment includes an active RSOA chip 503 and a passive photonic chip 507.
  • the active RSOA chip 503 contains reflective semiconductor optical amplifier RSOA channels 502 and 510. Its left end face 501 is coated with an optical high-reflective film, and its right end face 511 is coated with an optical anti-reflective film.
  • the active RSOA chip 503 can be made of common compound semiconductor materials such as III-V group InP series.
  • the RSOA channels 502 and 510 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • the optical waveguide 504 is butt-coupled with the RSOA channel 502 of the active RSOA chip.
  • the optical waveguide 504 has a waveguide phase control area 505 and a waveguide filter feedback area 506.
  • the left end face 501 of the RSOA channel 502, the RSOA channel 502, the optical waveguide 504, the waveguide phase control area 505 and the waveguide filter feedback area 506 constitute an external cavity semiconductor laser, in which the RSOA channel 502 serves as the gain of the external cavity semiconductor laser and provides a photon source.
  • the ring resonator 508 realizes optical transmission coupling between the external cavity semiconductor laser and the RSOA channel 510 .
  • the waveguide feedback filtering area 506 may be a waveguide Bragg reflection grating, or a reflection feedback area composed of multiple ring resonators.
  • the optical waveguide 513 and the RSOA channel 510 are butt coupled.
  • the docking coupling ports of the optical waveguides 504 and 513 and the RSOA channels 502 and 510 can have waveguide mode converters (optical waveguide tapers) to ensure optimal optical coupling efficiency between them and the corresponding RSOA channels.
  • a right angle is formed between the optical waveguides of the RSOA channels 502 and 510 and the left end face 501 to ensure efficient return coupling of the light reflected by the left end face.
  • a certain angle can be formed between the optical waveguides of the RSOA channels 502 and 510 and the right end surface 511 to prevent the reflected light from the right end surface 511 from returning to the ROSA channels 502 and 510 to cause interference.
  • the light generated by the external cavity semiconductor laser is divided into two paths when transmitted along the optical waveguide 504 to the ring resonator 508.
  • One path passes through the ring resonator 508 and is transmitted along the right side of the optical waveguide 509 to the waveguide optical coupler 516, and then passes through the right end surface of the passive photonic chip. 517 shot.
  • the other path is coupled to the left path of the optical waveguide 513 through the ring resonator 508, and enters the RSOA channel 510 through the waveguide phase control area 514. It first undergoes left amplification, is reflected at the left end face 501 of the RSOA channel 510, and then undergoes secondary amplification on the right path. , coupled back to the optical waveguide 513.
  • the amplified light passes through the ring resonator 508, part of it is transmitted rightward along the optical waveguide, passes through the waveguide phase controller 515, and is combined with the light transmitted from the optical waveguide 509 at the 2x1 waveguide optical coupler 516, along the passive photonic chip 508
  • the right end face 517 of the optical waveguide emits out; the waveguide phase controller 515 ensures that the two beams of light from the optical waveguides 513 and 509 combined in the 2x1 waveguide optical coupler 516 have the same phase.
  • the other part of the light is coupled by the ring resonator 508 and returns to the external cavity semiconductor laser along the left path of the optical waveguide.
  • the waveguide phase controller 514 ensures that the light reflected by the RSOA channel 510 has the same phase as the intra-cavity laser after reaching the RSOA channel 502 (that is, an integer multiple of 360 degrees).
  • the ring resonator 508 After the light traveling to the right in the waveguide filter feedback area 506 passes through the ring resonator 508: part of it is coupled to the optical waveguide 513 and transmitted to the RSOA channel 510 for amplification, completing a cyclic amplification process; the other part passes through the optical waveguide 509 and the waveguide optical coupler 516.
  • the right end surface 517 of the passive photonic chip 507 emits light.
  • the optical waveguides in the waveguide phase control areas 505, 514, and 515 are equipped with local metal electrodes.
  • the metal electrodes are used to change the refractive index of the corresponding covered portion of the waveguide and control the phase by changing the optical path.
  • the temperature of the metal electrode is changed by heating, resulting in a thermo-optical effect that changes the refractive index of the waveguide; the current on the metal electrode can also be changed to change the refractive index of the waveguide through the electro-optical effect.
  • the 2x1 waveguide optical coupler 516 may be a splitting coupler with a fixed splitting ratio, or an adjustable splitting coupler with dual ports in which the splitting ratio between the two optical waveguides can be changed.
  • the spectral curve 519 coupled between the optical waveguides 504 and 509 through the ring resonator 508 is characterized by a series of comb-shaped resonance peaks with different central wavelength positions but equal wavelength intervals.
  • Curve 520 is the reflection spectrum of the waveguide filter feedback region 506.
  • the reflection peak 5 of the spectrum curve 520 of the waveguide filter feedback area 506 coincides with a certain peak of the series of comb-shaped resonance peaks of the ring resonator 508 at the central wavelength position to ensure that the light emitted by the external cavity semiconductor laser passes through the ring resonance.
  • Analyzer 508 is coupled to RSOA channel 510 for amplification.
  • wavelength tuning of the external cavity semiconductor laser under high power output can be achieved.
  • this embodiment includes two separate active RSOA chips 603 and 613 and a passive photonic chip 609.
  • Active RSOA chips 603 and 613 respectively contain reflective semiconductor optical amplifier RSOA channels 602 and 611. Their left end faces 601 and 612 are coated with optical high-reflective films, and their right end faces 604 and 614 are coated with optical anti-reflective films.
  • Active RSOA chips 603 and 613 are made of common compound semiconductor materials such as III-V group InP series.
  • RSOA channels 602 and 611 generate broadband spontaneous emission photons through electro-optical conversion when current is injected.
  • There is an optical waveguide on the passive photonic chip 609, and its left end surface 615 and right end surface 621 are both coated with optical anti-reflection films.
  • the optical waveguide 605 is butt-coupled with the RSOA channel 602 of the active RSOA chip 603 , and the optical waveguide 616 is butt-coupled with the waveguide channel 611 of the RSOA chip 613 .
  • Optical waveguide 605 is connected with waveguide phase control area 606 and waveguide filter feedback area 607.
  • the left end face 601 of the active RSOA chip 603, the RSOA channel 602, the optical waveguide 605, the waveguide phase control area 606 and the waveguide filter feedback area 607 constitute an external cavity semiconductor laser, in which the RSOA channel 602 serves as the gain light source of the external cavity laser.
  • the ring resonator 610 realizes optical transmission filter coupling between the external cavity semiconductor laser and the amplifier RSOA channel 613.
  • the docking coupling ports of the optical waveguides 605 and 616 and the RSOA channels 602 and 611 can have waveguide mode converters (optical waveguide tapers) to ensure optimal optical coupling efficiency between them and the corresponding RSOA channels.
  • the optical waveguides of the RSOA channels 602 and 611 form right angles to the left end surfaces 601 and 612 respectively to ensure efficient return coupling of the light reflected by the left end surface.
  • the light waves of the RSOA channels 602 and 611 can form a certain angle with the right end surfaces 604 and 614 respectively to prevent the reflected light from the right end surfaces 604 and 614 from returning to the ROSA channels 602 and 611 to cause interference.
  • the waveguide feedback filter area 607 can be a waveguide sampled reflection grating (sampled grating). Its spectral characteristic is a series of comb-shaped reflection peaks 626 with different central wavelength positions but almost equal wavelength intervals. As shown in Figure 9, after passing through two rings of the ring resonator 610 The spectral curve 627 of the optical coupling between optical waveguides is characterized by a series of comb-shaped resonance peaks with different central wavelength positions but almost equal wavelength spacing. In this embodiment, the wavelength spacing of the comb peaks of the sampling grating and the ring resonator are different.
  • the left end face 612 (reflective end face) of the active RSOA chip 613, the RSOA channel 611, the optical waveguide 616 (part), the waveguide phase control area 617, the ring resonator 610, the waveguide filter feedback area 607, the waveguide phase control area 606, and the optical waveguide 605 (part), the RSOA channel 602 and the left end face 601 (reflective end face) of the active RSOA chip 603 constitute a composite extracavity semiconductor laser, and the laser occurs at the wavelength where the comb peaks of the sampling grating and the ring resonator overlap.
  • the output wavelength of the composite extracavity semiconductor laser can be tuned in a wide range.
  • the light emitted by the RSOA channel 602 is coupled into the optical waveguide 605 and is divided into two paths when transmitted to the ring resonator 610.
  • One path passes through the ring resonator 610 and is transmitted to the right along the optical waveguide 622 to the waveguide optical coupler 619, and then is transmitted to the right end of the passive photonic chip. Face 621 shot.
  • the other path is coupled to the left path of the optical waveguide 616 through the ring resonator 610.
  • the wavelength of this path of light enters the RSOA channel 611 through the waveguide phase control area 617, first undergoes left path amplification, is reflected at the left end face 612 of the RSOA channel 611, and then right The row undergoes secondary amplification and is coupled back to the optical waveguide 616.
  • the amplified light passes through the ring resonator 610, part of it is transmitted right along the optical waveguide 616, passes through the waveguide phase controller 618, and is combined with the light transmitted from the optical waveguide 622 at the 2x1 waveguide optical coupler 619, along the passive photonic chip
  • the other part of the light is coupled by the ring resonator 610 and returns to the external cavity semiconductor laser along the left path of the optical waveguide 608.
  • the filter area 607 enters the external cavity semiconductor laser, and is gain amplified in the RSOA channel 602, and then transmitted along the optical waveguide 605; the waveguide phase control area 606 ensures that the light reflected by the RSOA channel 611 reaches the RSOA channel 602 and enters the cavity.
  • the lasers have the same phase (i.e. differ by an integer multiple of 360 degrees).
  • the light traveling to the right in the waveguide feedback filtering area 607 passes through the ring resonator 610, part of it is coupled to the optical waveguide 616 and transmitted to the RSOA channel 611 for amplification, completing a cyclic amplification process; the other part passes through the optical waveguide 620 and the waveguide optical coupler 619.
  • the right end surface 621 of the passive photonic chip 609 emits light.
  • the optical waveguides in the waveguide phase control areas 606, 617, and 618 are equipped with local metal electrodes.
  • the metal electrodes are used to change the refractive index of the corresponding covered part of the waveguide and control the phase by changing the optical path.
  • the temperature of the metal electrode is changed by heating, resulting in a thermo-optical effect that changes the refractive index of the waveguide; the current on the metal electrode can also be changed to change the refractive index of the waveguide through the electro-optical effect.
  • the 1x2 waveguide optical coupler 619 may be a splitting coupler with a fixed splitting ratio, or an adjustable splitting coupler with a dual port in which the splitting ratio between the two waveguides can be changed.
  • the spontaneous emission gain spectrum curves of ROSA channel 602 and ROSA channel 611 may be the same or different. For example, they can have similar 3dB bandwidth but different center wavelengths, and a considerable part of the emission spectra overlap, as shown in Figure 10. In this way, the composite cavity laser of this embodiment can achieve wide-range wavelength tuning under flat high-power output. .
  • the embodiments of the present invention are not limited to this. According to the above content, according to the common technical knowledge and common means in the field, without departing from the above basic technical ideas of the present invention, the present invention can also make other equivalent modifications in various forms. , replacement or modification, all can achieve the purpose of the present invention.
  • the illustrations in the present invention are schematic diagrams and do not represent actual dimensions or values.

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Abstract

一种外腔半导体激光器及反射式半导体光学放大器的芯片集成，由有源RSOA芯片（203,232,303,403,503,603）与无源光子芯片（206,235,308,406,507,609）经RSOA通道（202,209,231,238,302,312,402,412,502,510,602,611）和光波导（204,233,304,414,504,605）耦合对接集成，有源RSOA芯片（203,232,303,403,503,603）与无源光子芯片（206,235,308,406,507,609）的耦合端面镀有光学抗反射膜，有源RSOA芯片（203,232,303,403,503,603）的另一端面镀有光学高反射膜，在无源光子芯片（206,235,308,406,507,609）的光波导（204,233,304,414,504,605）上设有波导位相控制区（205,234,305,417,505,606）、波导滤波反馈区（207,236,307,418,506,607）和波导光学耦合器（212,242,310,315,318,408,411,415,516,619），波导位相控制区（205,234,305,417,505,606）和波导滤波反馈区（207,236,307,418,506,607）均设有用于改变光波导（204,233,304,414,504,605）折射率的电极，RSOA通道（202,209,231,238,302,312,402,412,502,510,602,611）包括增益RSOA通道和放大RSOA通道构成反射式半导体光学放大器，增益RSOA通道和与之耦合光波导（204,233,304,414,504,605）上的波导位相控制区（205,234,305,417,505,606）和波导滤波反馈区（207,236,307,418,506,607）构成外腔半导体激光器。在光强放大的同时保持光的相干性，避免光学杂散效应。

Description

外腔半导体激光器及反射式半导体光学放大器的芯片集成 技术领域
本发明涉及一种外腔半导体激光器及反射式半导体光学放大器的芯片集成。
背景技术
光子集成芯片的发展趋势是向以CMOS为基础的硅半导体平台进行的转移，具体代表就是硅光子技术，即在硅晶圆上利用CMOS半导体工艺和技术，实现高性能、低成本的光器件的大规模集成和制造。
SOA(Semiconductor Optical Amplifier)或者半导体光学放大器，是很多应用场景中必不可少的核心元器件。在光通讯中，为了保证发射的激光信号达到一定功率强度，对激光发射的光功率进行放大。新的应用如激光雷达和长距离光子传感，在要求半导体激光器保持高光谱纯度如单模和高相干性的同时，对激光功率也提出了更高要求。在利用SOA对激光光强或光信号进行放大时，一般是光从SOA的一个端口进入，经放大后再从另一个端口输出，这时SOA是运行在透过模式，和被放大的激光器在光路上是串联的方式连接。
透射式SOA光学放大器在光路的嵌入主要有两种方式：
一种方式是作为一个独立元器件带有输入和输出光纤接口，在光传输过程中某一传输节点连入光纤网络对入射光进行放大。
另一种方式是将SOA和激光器或集成光路芯片直接进行单片集成。早期磷化铟芯片(如1550nm激光器和放大器)技术的做法就是把半导体激光器和SOA生长集成在同一个化合半导体衬底芯片上，它的特点是激光器发出的光经光波导传输到SOA直接放大后再传出。
在硅光集成技术的发展应用中，由于硅是间接带隙半导体，不能发光，任何跟发光相关的功能要依赖化合物半导体器件来实现。化合物半导体发光芯片或功能向硅光芯片的集成一般通过混合集成的方式来实现。有代表性的做法是把化合物半导体光放大器芯片倒装贴片在硅光芯片上面，通过光学瞬逝波耦合，让光子集成芯片波导中传输的光耦合到SOA的波导通道，经SOA进行放大，然后再耦合到硅光芯片的光波导中继续传输。在这一过程中SOA是以透射模式运行。但是在这种模式下由于属于不同的材料体系，化合物半导体SOA芯片向硅 片的集成，都要经过多次刻蚀，对工艺要求苛刻，由于良率等原因，实现成本非常昂贵。
发明内容
本发明的目的在于提供一种外腔半导体激光器及反射式半导体光学放大器的芯片集成，能够实现高性能单模激光器的高光功率、高相干输出，并且可以通过简单的对接工艺和无源光子集成芯片的实现混合集成。
本发明的目的通过以下技术措施实现：一种外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于，它由设有RSOA通道的有源RSOA芯片与设有光波导的无源光子芯片经RSOA通道和光波导耦合对接集成，所述有源RSOA芯片与无源光子芯片的耦合端面镀有光学抗反射膜，所述有源RSOA芯片的另一端面镀有光学高反射膜，在所述无源光子芯片的光波导上设有波导位相控制区、波导滤波反馈区和波导光学耦合器，所述波导位相控制区和波导滤波反馈区均设有用于改变光波导折射率的电极，所述RSOA通道包括用于光增益的增益RSOA通道和用于光放大的放大RSOA通道构成反射式半导体光学放大器，所述增益RSOA通道和与之耦合光波导上的波导位相控制区和波导滤波反馈区构成外腔半导体激光器，所述外腔半导体激光器发出的光经光波导传输并耦合到放大RSOA通道进行放大，再由放大RSOA通道的高反射膜反射耦合回到无源光子芯片的光波导。
本发明的放大RSOA通道既作为光增益反馈又作为放大器来实现光放大。为了避免光学杂散效应，在两个连接RSOA通道的光波导中加入波导位相控制区，使得经RSOA通道放大的光和外腔半导体激光器发出的光以相干的方式叠加，在光强放大的同时保持光的相干性。
本发明多个反射式半导体光学放大器(RSOA)通道，采用简单侧边对接耦合到无源光子集成芯片中相对应的光波导，在形成外腔半导体激光器的同时，实现反射式光放大。并且，波导光路中存在多个波导位相控制区，保证经放大的光和外腔半导体激光器的发光合路后保持同位相，实现光功率的相干相加。并且，在一些实施方式中，外腔半导体激光器的外腔滤波反馈区是波长可调的，激光输出可以实现波长可调和高光功率；在另外一些实施方式中，通过对外腔 半导体激光器的外腔滤波反馈区的选择及其放大ROSA通道光学连接的耦合器的选择，在实现功率放大的同时实现激光波长的大范围可调。
本发明所述有源RSOA芯片可以是含有多个RSOA通道的单芯片，也可以包括多个单芯片，每个单芯片含有一个或多个RSOA通道。
本发明在连接外腔半导体激光器和放大RSOA通道之间的光波导上设有波导位相控制区，保证光在两者之间同相相干传输。
本发明在所述放大RSOA通道和外腔半导体激光器联通光路或合波输出之间设有波导位相控制区，保证光路合波后输出光的位相相干。
本发明所述放大RSOA通道和外腔半导体激光器通过波导光学耦合器或环型共振器实现光传输及耦合。
本发明所述外腔半导体激光器的波导滤波反馈区的波长可调，外腔半导体激光器可以实现高功率输出下的波长调谐，所述波导滤波反馈区是波导反射光栅或者是由多个环形共振器形成的等效反射反馈区。
本发明所述波导反射光栅是波导取样反射光栅或波导超结构光栅，当波导取样反射光栅或波导超结构光栅是可调谐的，且所述放大RSOA通道和外腔半导体激光器之间光传输的环型共振器或波导光学耦合器是波长可调谐时，所述增益RSOA通道和放大RSOA通道的光学高反射膜之间构成复合腔波长可调激光器，该两个RSOA通道的增益发射光谱的中心波长不同，这样的复合腔可调激光器可以实现宽波长调谐范围同时保证高激光功率输出。
本发明所述无源光子芯片的两个端面均镀有光学抗反射膜。
本发明所述RSOA通道和光波导的对接耦合端口设有波导模式转换器(optical waveguide taper)，以保证光波导和RSOA通道有最佳的光学耦合效率。
本发明所述RSOA通道的光波导和设有光学高反射膜的端面之间形成直角，以保证高效反射耦合。
本发明所述波导光学耦合器是固定分光比的分光耦合器或者是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
与现有技术相比，本发明具有如下显著的效果：
⑴本发明的放大RSOA通道既作为光增益反馈又作为放大器来实现光放大。 为了避免光学杂散效应，在两个连接RSOA通道的光波导中加入波导位相控制区，使得经RSOA通道放大的光和外腔半导体激光器发出的光以相干的方式叠加，在光强放大的同时保持光的相干性。
⑵本发明采用来反射式半导体光学放大器RSOA通道实现光放大，在同样的通道长度的情况下，可以加倍光子放大行程。
⑶本发明RSOA通道和无源光子芯片的光波导通过端面对接耦合实现光放大，相对于通过瞬逝波耦合的有源、无源贴片方案，可灵活的实现更高耦合效率，并大大简化了集成工艺，降低了成本。
⑷本发明在外腔半导体激光器和放大RSOA通道之间的光波导存在位相控制，保证光在两者之间相干传输。
⑸本发明在放大RSOA通道和外腔半导体激光器合波输出之间存在位相控制区，保证合波后输出光的位相相干。
⑹本发明当外腔半导体激光器的波导滤波反馈区是波长可调时，外腔半导体激光器可以实现高功率输出下的波长调谐。
⑺本发明当外腔激光器的波导滤波反馈区是取样反射光栅(sampled grating)或波导超结构光栅(super-structure grating)并且波长可调时，放大RSOA通道和外腔半导体激光器合波输出之间的环型共振器或者波导光学耦合器是波长可调时，两个RSOA通道的高反射端面之间形成复合腔大范围可调激光器。如果两个RSOA通道的发射光谱的中心波长不同，这样的复合腔大范围可调激光器可以实现大波长范围内的平坦高功率输出和更大波长调谐范围。
附图说明
下面结合附图和具体实施例对本发明作进一步的详细说明。
图1是本发明实施例1的组成结构示意图；
图2是本发明实施例1的光谱曲线示意图；
图3是本发明实施例2的组成结构示意图；
图4是本发明实施例3的结构示意图；
图5是本发明实施例4的组成结构示意图；
图6是本发明实施例5的组成结构示意图；
图7是本发明实施例5的光谱曲线示意图；
图8是本发明实施例6的组成结构示意图；
图9是本发明实施例6的光谱曲线示意图之一；
图10是本发明实施例6的光谱曲线示意图之二。
具体实施方式
实施例1
如图1所示，是本发明一种外腔半导体激光器及反射式半导体光学放大器的芯片集成，它由一个设有RSOA通道202、209的有源RSOA芯片203与设有光波导的无源光子芯片206经RSOA通道和光波导耦合对接集成，其中，RSOA通道202、209作为反射式半导体光学放大器，有源RSOA芯片203的右端面210(有源RSOA芯片203与无源光子芯片206的耦合端面)镀有光学抗反射膜，有源RSOA芯片203的另一端面(左端面201)镀有光学高反射膜。
有源RSOA芯片203可由常见的化合物半导体材料如III-V族InP系列制成，RSOA通道202、209在电流注入时通过电光转换产生宽带自发辐射光子。无源光子芯片206的左端面215和右端面216镀有光学抗反射膜。
在无源光子芯片206的光波导上设有波导位相控制区205(Phase Control或PC)、波导滤波反馈区207(Cavity Mirror或CM)、波导光学耦合器212和波导位相控制区213，其中，波导位相控制区205和波导滤波反馈区207位于光波导204上，波导位相控制区213位于光波导208上。光波导204和有源RSOA芯片203的RSOA通道202对接耦合，波导位相控制区205和波导滤波反馈区207均设有用于改变波导折射率的电极。
在本实施例中，RSOA通道202是用于光增益的增益RSOA通道，RSOA通道209是用于光放大的放大RSOA通道，它构成反射式半导体光学放大器。
RSOA通道202的高反射端面(左端面201)、RSOA通道202、光波导204、波导位相控制区205及波导滤波反馈区207构成外腔半导体激光器，其中RSOA通道202做为外腔半导体激光器的增益区并提供光子源。外腔半导体激光器发出的光经光波导传输并耦合到放大RSOA通道进行放大，再由放大RSOA通道的高反射膜反射耦合回到无源光子芯片的光波导，沿波导214传输并在右端面216出射。
波导滤波反馈区207可以是波导布拉格反射光栅，也可以是由两个以上环形共振器构成的反射反馈区。
光波导211和RSOA通道209对接耦合。
光波导204、211在和RSOA通道202、209的对接耦合端口设有波导模式转换器(Optical Waveguide Taper)，以保证它们和相应RSOA通道有最佳的光学耦合效率。
RSOA通道202、209的光波导和左端面201之间形成直角，以保证高效反射耦合。RSOA通道202、209的光波导和右端面210之间可以形成很小的角度，以避免右端面210的光反射回传到ROSA通道202、209形成干扰。
外腔半导体激光器产生的光经光波导208、波导光学耦合器212和光波导211进入RSOA通道209，先经历左行放大，然后经RSOA通道209的左端面201反射，再右行经历二次放大，耦合回到光波导211。放大后的光经过1x2波导光学耦合器212后，一路光经光波导214传输，从无源光子芯片206右端面216出射；另一路光经光波导208返回外腔半导体激光器，并在波导滤波反馈区207处，部分被波导滤波反馈区207反射回原路，另一部分光透过波导滤波反馈区207进入外腔半导体激光器，并在RSOA通道202那里被增益放大，再沿光波导208输出；波导位相控制区213是用来保证这两部分光之间具有相同位相(即调节RSOA通道202、209之间光传输的位相，相差360度的整数倍)。这两部分光会继续经过波导光学耦合器212和光波导211传输到RSOA通道209，在那里放大后再通过光波导211回传到无源光子芯片206；然后，在波导光学耦合器212处分光，一路光经光波导214传输，从无源光子芯片216右端出射；另一路光经光波导208继续返回外腔半导体激光器，完成一个循环放大流程。波导位相控制区205、213的光波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。1x2波导光学耦合器212可以是固定分光比的分光耦合器，也可以是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
波导滤波反馈区207可以是波导布拉格反射光栅，也可以是多个环形共振器构成的反射反馈区。
当波导滤波反馈区207的中心反射波长可以调谐时，可以实现外腔半导体激光器在高功率输出下的波长调谐。
如图2所示，RSOA通道202、209的宽带增益光谱220、221，无源光子芯片光波导上的波导滤波反馈区207的反射光谱222及构成的激光的发射谱线223，由于属于同一芯片，RSOA通道202、209的宽带增益光谱220、221非常相近。
实施例2
如图3所示，本实施例包括一个有源RSOA芯片232和无源光子芯片235。有源RSOA芯片232含有反射式半导体光学放大器RSOA通道231、238，它的左端面230镀有光学高反射膜，右端面239镀有光学抗反射膜。有源RSOA芯片232可由常见的化合物半导体材料如III-V族InP系列制成。RSOA通道231、238在电流注入时通过电光转换产生宽带自发辐射光子。无源光子芯片235上有光波导，它的左端面244和右端面243上镀有光学抗反射膜。光波导233和有源RSOA芯片的RSOA通道231对接耦合，光波导233上有波导位相控制区234和波导滤波反馈区236。RSOA通道231的左端面230、RSOA通道231、波导233、波导位相控制区234及波导滤波反馈区236构成外腔半导体激光器，其中RSOA通道231做为外腔半导体激光器的增益区并提供光子源。
波导滤波反馈区236可以是波导布拉格反射光栅，也可以是由多个环形共振器构成的反射反馈区。
光波导240和RSOA通道238对接耦合。
光波导233、240和RSOA通道231、238的对接耦合端口设有波导模式转换器以保证它们和相应RSOA通道有最佳的光学耦合效率。RSOA通道238、231的光波导和左端面230之间形成直角，以保证经左端面反射的光高效返回耦合。RSOA通道238、231的光波导和右端面239之间可以形成很小的角度以避免右端面239的光反射回传到ROSA通道231、238。
外腔半导体激光器产生的光传输过波导光学耦合器242后，分成两路，一路经光波导237直接从无源光子芯片235的右端直接出射；另一路经光波导240进入RSOA通道238，先经历左行放大，然后经RSOA通道238的左端面230反射，再右行经历二次放大，耦合回到光波导240。这路经放大的光，经过1x2波导光 学耦合器242传输到波导滤波反馈区236，这时，一部分光经波导滤波反馈区236透射进入外腔半导体激光器231,233,234进行增益放大，再沿光波导233返回传输出。另一部分光经波导滤波反馈区236反射后回传。这两部分光在经过波导光学耦合器242后，一部分沿光波导237从无源光子芯片235的右端直接出射，另一部分经光波导240进入RSOA通道238进行放大，完成一个循环放大流程。
波导位相控制区241是用来保证光在两个RSOA之间传输具有相同位相(即调节外腔半导体激光器和RSOA238之间的光放大的位相，相差360度的整数倍)。
波导位相控制区234、241的波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。
1x2波导光学耦合器可以是固定分光比的分光耦合器，也可以是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
波导滤波反馈区236可以是波导布拉格反射光栅，也可以是多个环形共振器构成的反射反馈区。
当波导滤波反馈区236的反射波长可以调谐时，可以实现外腔激光器在高功率输出下的波长调谐。
实施例3
如图4所示，本实施例包括一个有源RSOA芯片303和无源光子芯片308。有源RSOA芯片303含有反射式半导体光学放大器RSOA通道302、312，它的左端面301镀有光学高反射膜，右端面313镀有光学抗反射膜。有源RSOA芯片303可由常见的化合物半导体材料如III-V族InP系列制成，RSOA通道302、312在电流注入时通过电光转换产生宽带自发辐射光子。无源光子芯片308上有光波导，无源光子芯片308的左端面319和右端面320均镀有光学抗反射膜；光波导304和有源RSOA芯片的RSOA通道302对接耦合，光波导304上有波导位相控制区305和波导滤波反馈区307；RSOA通道302的左端面301、RSOA通道302、光波导304、波导位相控制区305及波导滤波反馈区307构成外腔半导体激光器，其中RSOA通道302做为外腔半导体激光器的增益并提供光子源。
波导滤波反馈区307可以是波导布拉格反射光栅，也可以是由两个或多个环形共振器构成的反射反馈区。
光波导314和RSOA通道312对接耦合。光波导314经波导光学耦合器315分别耦合到光波导316和光波导309。
光波导304、314和RSOA通道302、312的对接耦合端口有波导模式转换器(optical waveguide taper)以保证它们和相应RSOA通道有最佳的光学耦合效率。
RSOA通道302、312的光波导和左端面301之间形成直角，以保证经左端面反射的光高效返回耦合。RSOA通道302、312的光波导和右端面313之间可以形成一定的角度以避免右端面313的反射光回传到ROSA通道302、312形成干扰。
外腔半导体激光器301,302,304,305,307产生的光沿光波导304传输至波导光学耦合器310时分为两路，一路沿光波导311传输，在到波导光学耦合器318与RSOA通道312放大过的光合波，由无源光子芯片308右端320出射，波导位相控制区317是保证合波后的光具有相同位相(即调节经RSOA通道312放大后的光和外腔激光器的直接发光合路输出的光有相同位相)。另一路沿光波导309、波导位相控制区306、波导314进入RSOA通道312，先经历左行放大，在RSOA通道312的左端面301被反射，然后右行放大，耦合回到光波导314。放大后的光，经过1x2波导光学耦合器315后，一部分沿光波导316传输经过波导位相控制区317，在波导光学耦合器318处与光波导311传输过来的光合波，沿无源光子芯片308的右端出射。另一路光沿光波导309返回外腔半导体激光器，并在波导反馈滤波区307处，部分被波导反馈滤波区307反射回原路，另一部分光透过波导反馈滤波区307进入外腔半导体激光器301，302，304，305，307，并在RSOA通道302那里被增益放大，再沿光波导304传出；波导位相控制区306是用来保证这两部分光之间具有相同位相(即调节外腔半导体激光器和RSOA通道312之间的光放大的位相，相差360度的整数倍)。这部分光会继续经过波导光学耦合器310分光，部分沿光波导309传输到RSOA通道312进行放大，完成一个循环放大流程；另一部分经光波导311和波导光学耦合器318由无源光子芯片308的右端出射。
波导位相控制区305、306、317的光波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发 热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。
1x2波导光学耦合器310、315、318可以是固定分光比的分光耦合器，也可以是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
波导反馈滤波区307可以是波导布拉格反射光栅，也可以是由多个环形共振器构成的反射反馈区。
当波导反馈滤波区307的反射波长可以调谐时，可以实现外腔半导体激光器在高功率输出下的波长调谐。
实施例4
如图5所示，本实施例包括一个有源RSOA芯片403和无源光子芯片406。有源RSOA芯片403含有反射式半导体光学放大器RSOA通道402、412，它的左端面401镀有光学高反射膜，右端面413镀有光学抗反射膜。有源RSOA芯片403可由常见的化合物半导体材料如III-V族InP系列制成，RSOA通道402、412在电流注入时通过电光转换产生宽带自发辐射光子。无源光子芯片406上有光波导，无源光子芯片406的左端面419和右端面420均镀有光学抗反射膜。光波导404和RSOA通道402对接耦合，光波导414和RSOA通道412对接耦合。光波导414通过波导光学耦合器415与光波导416、波导位相控制区417和波导滤波反馈区418相连接。光波导404、414在和RSOA通道402、412的对接耦合端口可以有波导模式转换器(optical waveguide taper)以保证它们和相应RSOA通道有最佳的光学耦合效率。
RSOA通道402、412的光波导和左端面401之间形成直角，以保证经左端面反射的光高效返回耦合。RSOA通道402、412的光波导和右端面413之间可以形成一定的角度以避免右端面413的反射光回传到ROSA通道402、412形成干扰。
RSOA通道412的发射出的光，沿光波导414经过波导光学耦合器415，分为两路：一路沿光波导416经波导位相控制区417传播至波导滤波反馈区418，在波导滤波反馈区418处，一部分光透过在波导滤波反馈区418沿光波导416继续向右传播，其余部分被波导滤波反馈区418反射沿原路返回至RSOA通道412。RSOA通道412的左端面401、RSOA通道412、光波导414、波导光学耦合器415、光波导416、波导位相控制区417及波导滤波反馈区418构成外腔半 导体激光器，其中RSOA通道412做为外腔半导体激光器的增益并提供光子源。另一路光沿光波导407经1x2波导光学耦合器408耦合到光波导404，再传输进入RSOA通道402，先经历左行放大，在RSOA通道402的左端面401被反射，然后右行经历二次放大，耦合回到光波导404，经过波导相位控制区405至波导光学耦合器408时分再为两路，一路沿光波导407传输，传输到RSOA通道412进行增益放大，完成一个循环放大流程；波导相位控制区405是保证由RSOA通道402反射回的光到达RSOA通道412后和腔内激光具有相同位相(即调节外腔激光器和RSOA通道402之间的光传输的位相，相差360度的整数倍)。另一路沿光波导409经过波导相位控制区410在2x1波导光学耦合器411与外腔半导体激光器发出的沿光波导416传播的光合波，由无源光子芯片右端面420出射。波导位相控制区410保证合波后的光具有相同位相，即调节经RSOA通道412放大后的光和外腔半导体激光器的直接发光合路输出的位相。
波导反馈滤波区418可以是波导布拉格反射光栅，也可以是由多个环形共振器构成的反射反馈区。
波导位相控制区405、410、417的光波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。
1x2波导光学耦合器408、411、415可以是固定分光比的分光耦合器，也可以是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
当波导反馈滤波区418的反射波长可以调谐时，可以实现外腔激光器在高功率输出下的波长调谐。
实施例5
如图6所示，本实施例包括一个有源RSOA芯片503和无源光子芯片507。有源RSOA芯片503含有反射式半导体光学放大器RSOA通道502、510，它的左端面501镀有光学高反射膜，右端面511镀有光学抗反射膜。有源RSOA芯片503可由常见的化合物半导体材料如III-V族InP系列制成，RSOA通道502、510在电流注入时通过电光转换产生宽带自发辐射光子。
无源光子芯片507上有光波导，无源光子芯片507的左端面512和右端面517镀有光学抗反射膜。光波导504和有源RSOA芯片的RSOA通道502对接耦合，光波导504上有波导位相控制区505和波导滤波反馈区506。RSOA通道502的左端面501、RSOA通道502、光波导504、波导位相控制区505及波导滤波反馈区506构成外腔半导体激光器，其中RSOA通道502做为外腔半导体激光器的增益并提供光子源。环形共振器508实现外腔半导体激光器和RSOA通道510之间的光传输耦合。
波导反馈滤波区506可以是波导布拉格反射光栅，也可以是由多个环形共振器构成的反射反馈区。
光波导513和RSOA通道510对接耦合。
光波导504、513和RSOA通道502、510的对接耦合端口可以有波导模式转换器(optical waveguide taper)以保证它们和相应RSOA通道有最佳的光学耦合效率。RSOA通道502、510的光波导和左端面501之间形成直角，以保证经左端面反射的光高效返回耦合。RSOA通道502、510的光波导和右端面511之间可以形成一定的角度以避免右端面511的反射光回传到ROSA通道502、510形成干扰。
外腔半导体激光器产生的光沿光波导504传输至环形共振器508时分为两路，一路通过环形共振器508沿光波导509右行传输到波导光学耦合器516，然后由无源光子芯片右端面517出射。另一路经环形共振器508耦合到光波导513左行，经过波导位相控制区514进入RSOA通道510，先经历左行放大，在RSOA通道510的左端面501被反射，然后右行经历二次放大，耦合回到光波导513。
放大后的光，经过环形共振器508后，一部分沿光波导右行传输经过波导位相控制器515，在2x1波导光学耦合器516处与光波导509传输过来的光合波，沿无源光子芯片508的右端面517出射；波导位相控制器515保证在2x1波导光学耦合器516合波的、来自光波导513、509的两束光具有相同位相。其它部分光经环形共振器508耦合沿光波导左行返回外腔半导体激光器，并在波导反馈滤波区506处，它部分被波导反馈滤波器506反射回原路，剩余部分光透过波导反馈滤波器506进入外腔半导体激光器，并在RSOA通道502那里被增益放大，再 沿光波导504传出；波导位相控制器514是保证由RSOA通道510反射回的光到达RSOA通道502后和腔内激光具有相同位相(即相差360度的整数倍)。
在波导滤波反馈区506右行的光经过环形共振器508后：部分耦合到光波导513传输到RSOA通道510进行放大，完成一个循环放大流程；另一部分经光波导509和波导光学耦合器516由无源光子芯片507的右端面517出射。
波导位相控制区505、514、515的光波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。
2x1波导光学耦合器516可以是固定分光比的分光耦合器，也可以是双端口的两个光波导之间的分光比可以改变的可调分光耦合器。
如图7所示，经过环形共振器508在光波导504、509之间耦合的光谱曲线519，它的特点是有一系列中心波长位置不同但等波长间距的梳状共振峰。曲线520是波导滤波反馈区506的反射光谱。在本实施例中，波导滤波反馈区506光谱曲线520的反射峰5与环形共振器508的系列梳状共振峰的某一峰在中心波长位置重合，以保证外腔半导体激光器发出的光经环形共振器508耦合到RSOA通道510进行放大。
当波导反馈滤波区506和环形共振器508可以波长调谐时，可以实现外腔半导体激光器在高功率输出下的波长调谐。
实施例6
如图8所示，本实施例包括两个分立的有源RSOA芯片603、613和无源光子芯片609。有源RSOA芯片603、613分别含有反射式半导体光学放大器RSOA通道602、611，它们的左端面601、612镀有光学高反射膜，右端面604、614镀有光学抗反射膜。有源RSOA芯片603、613由常见的化合物半导体材料如III-V族InP系列制成，RSOA通道602、611在电流注入时通过电光转换产生宽带自发辐射光子。无源光子芯片609上有光波导，它的左端面615和右端面621均镀有光学抗反射膜。
光波导605和有源RSOA芯片603的RSOA通道602对接耦合，光波导616和RSOA芯片613的波导通道611对接耦合。光波导605连有波导位相控制区 606和波导滤波反馈区607。有源RSOA芯片603的左端面601、RSOA通道602、光波导605、波导位相控制区606及波导滤波反馈区607构成外腔半导体激光器，其中RSOA通道602做为外腔激光的增益光源。环形共振器610实现外腔半导体激光器和放大器RSOA通道613之间的光传输滤波耦合。
光波导605、616和RSOA通道602、611的对接耦合端口可以有波导模式转换器(optical waveguide taper)以保证它们和相应RSOA通道有最佳的光学耦合效率。
RSOA通道602、611的光波导分别和左端面601、612之间形成直角，以保证经左端面反射的光高效返回耦合。RSOA通道602、611的光波分别和右端面604、614之间可以形成一定的角度以避免右端面604、614的反射光回传到ROSA通道602、611形成干扰。
波导反馈滤波区607可以是波导取样反射光栅(sampled grating)，它的光谱特征是系列中心波长位置不同但几乎等波长间距的梳状反射峰626，如图9所示，经过环形共振器610两光波导之间的光学耦合的光谱曲线627，它的特点是有一系列中心波长位置不同但几乎等波长间距的梳状共振峰。在本实施例中，取样光栅和环形共振器的梳状峰的波长间距不同。当取样光栅和环形共振器其中之一波长可调谐时，可以保证它们会有梳妆峰在某一波长重叠。有源RSOA芯片613的左端面612(反射端面)、RSOA通道611、光波导616(部分)、波导位相控制区617、环形共振器610、波导滤波反馈区607、波导位相控制区606、光波导605(部分)、RSOA通道602及有源RSOA芯片603的左端面601(反射端面)构成了复合腔外腔半导体激光器，激光发生在取样光栅和环形共振器的梳状峰重叠的波长。当取样光栅和环形共振器都可波长可调谐时，该复合腔外腔半导体激光器的输出波长可以大范围调谐。RSOA通道602发出的光耦合入光波导605，传输至环形共振器610时分为两路，一路通过环形共振器610沿光波导622右行传输到波导光学耦合器619，然后由无源光子芯片右端面621出射。另一路经环形共振器610耦合到光波导616左行，该路光的波长经过波导位相控制区617进入RSOA通道611，先经历左行放大，在RSOA通道611的左端面612被反射，然后右行经历二次放大，耦合回到光波导616。
放大后的光，经过环形共振器610后，一部分沿光波导616右行传输经过波导位相控制器618，在2x1波导光学耦合器619处与光波导622传输过来的光合波，沿无源光子芯片609的右端面出射；波导位相控制区618保证在2x1波导光学耦合器合波的、来自两光波导的两束光具有相同位相。其它部分光经环形共振器610耦合沿光波导608左行返回外腔半导体激光器，并在波导反馈滤波区607处，它部分被波导反馈滤波区607反射回原路，剩余部分光透过波导反馈滤波区607进入外腔半导体激光器，并在RSOA通道602那里被增益放大，再沿光波导605传出；波导位相控制区606是保证由RSOA通道611反射回的光到达RSOA通道602后和腔内激光具有相同位相(即相差360度的整数倍)。
在波导反馈滤波区607右行的光经过环形共振器610后，部分耦合到光波导616传输到RSOA通道611进行放大，完成一个循环放大流程；另一部分经光波导620和波导光学耦合器619由无源光子芯片609的右端面621出射。
波导位相控制区606、617、618的光波导带有局部金属电极，金属电极用于改变其对应覆盖部分波导的折射率，通过改变光程来控制位相。通过金属电极发热改变温度，产生热-光效应而改变波导折射率；也可改变金属电极上的电流，通过电-光效应来进行改变波导折射率。
1x2波导光学耦合器619可以是固定分光比的分光耦合器，也可以是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
ROSA通道602、ROSA通道611的自发辐射增益光谱曲线可以相同，也可以不同。例如，它们可以有相似的3dB带宽但是不同的中心波长，发射光谱有相当一部分重叠，如图10所示，这样，本实施例的复合腔激光器就可以实现平坦高功率输出下的大范围波长调谐。图10中，RSOA通道602的自发射光谱曲线628和RSOA通道611的自发射光谱曲线629，外腔半导体激光器发射的激光光谱曲线630。
本发明的实施方式不限于此，根据上述内容，按照本领域的普通技术知识和惯用手段，在不脱离本发明上述基本技术思想前提下，本发明还可以做出其它多种形式的等效修改、替换或变更，均可实现本发明目的。另外，本发明的图例均为示意图，并不代表真实的尺寸或数值。

Claims (10)

  1. 一种外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：它由设有RSOA通道的有源RSOA芯片与设有光波导的无源光子芯片经RSOA通道和光波导耦合对接集成，所述有源RSOA芯片与无源光子芯片的耦合端面镀有光学抗反射膜，所述有源RSOA芯片的另一端面镀有光学高反射膜，在所述无源光子芯片的光波导上设有波导位相控制区、波导滤波反馈区和波导光学耦合器，所述波导位相控制区和波导滤波反馈区均设有用于改变光波导折射率的电极，所述RSOA通道包括用于光增益的增益RSOA通道和用于光放大的放大RSOA通道构成反射式半导体光学放大器，所述增益RSOA通道和与之耦合光波导上的波导位相控制区和波导滤波反馈区构成外腔半导体激光器，所述外腔半导体激光器发出的光经光波导传输并耦合到放大RSOA通道进行放大，再由放大RSOA通道的高反射膜反射耦合回到无源光子芯片的光波导。
  2. 根据权利要求1所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述有源RSOA芯片是含有多个RSOA通道的单芯片或者包括多个单芯片，每个单芯片含有一个或多个RSOA通道。
  3. 根据权利要求2所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：在连接外腔半导体激光器和放大RSOA通道之间的光波导上设有波导位相控制区，在所述放大RSOA通道和外腔半导体激光器联通光路或合波输出之间设有波导位相控制区。
  4. 根据权利要求3所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述放大RSOA通道和外腔半导体激光器通过波导光学耦合器或环型共振器实现光传输及耦合。
  5. 根据权利要求4所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述外腔半导体激光器的波导滤波反馈区的波长可调，且所述波导滤波反馈区是波导反射光栅或者是由多个环形共振器形成的等效反射反馈区。
  6. 根据权利要求5所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述波导反射光栅是波导取样反射光栅或波导超结构光栅，当波导取样反射光栅或波导超结构光栅是可调谐的，且所述放大RSOA通道和外腔半导体激光器之间光传输的环型共振器或波导光学耦合器是波长可调谐时，所述增益RSOA通道和放大RSOA通道的光学高反射膜之间构成复合腔波长可调激光器，该两个RSOA通道的增益发射光谱的中心波长不同。
  7. 根据权利要求1所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述无源光子芯片的两个端面均镀有光学抗反射膜。
  8. 根据权利要求1所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述RSOA通道和光波导的对接耦合端口设有波导模式转换器。
  9. 根据权利要求1所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述RSOA通道的光波导和设有光学高反射膜的端面之间形成直角。
  10. 根据权利要求9所述的外腔半导体激光器及反射式半导体光学放大器的芯片集成，其特征在于：所述波导光学耦合器是固定分光比的分光耦合器或者是双端口的两个波导之间的分光比可以改变的可调分光耦合器。
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