WO2023216573A1 - Dispositif optique et procédé de mise en œuvre de détection d'imagerie asynchrone à chemin optique égal entre deux faces d'extrémité et deux faces latérales d'un dé semi-conducteur - Google Patents

Dispositif optique et procédé de mise en œuvre de détection d'imagerie asynchrone à chemin optique égal entre deux faces d'extrémité et deux faces latérales d'un dé semi-conducteur Download PDF

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WO2023216573A1
WO2023216573A1 PCT/CN2022/137093 CN2022137093W WO2023216573A1 WO 2023216573 A1 WO2023216573 A1 WO 2023216573A1 CN 2022137093 W CN2022137093 W CN 2022137093W WO 2023216573 A1 WO2023216573 A1 WO 2023216573A1
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prism
image
angle
optical axis
imaging
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PCT/CN2022/137093
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English (en)
Chinese (zh)
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廖廷俤
颜少彬
林晓丹
郑恒
段亚凡
黄衍堂
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泉州师范学院
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Publication of WO2023216573A1 publication Critical patent/WO2023216573A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/22—Telecentric objectives or lens systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques

Definitions

  • the present invention relates to optical instruments in the field of semiconductors, and in particular to an optical device and method for realizing non-synchronous optical path imaging detection of both end surfaces and both sides of semiconductor crystal grains.
  • the present invention provides an optical device and method for realizing non-synchronous optical path imaging detection of both end surfaces and both sides of semiconductor grains.
  • the detection device and method simplify the structural complexity of the screening machine system. Reduces the cost of screening machine systems.
  • the invention realizes an optical device for non-synchronous optical path imaging detection of both end surfaces and both sides of semiconductor crystal grains. It is characterized in that: a camera, a telecentric imaging lens, a four-sided imaging compound prism assembly, and a camera are arranged in the optical path direction of the optical device. Four sets of imaging prism assemblies, semiconductor crystal grains and glass carrier turntables, the four-sided imaging compound prism assembly is located on the optical axis of the telecentric imaging lens;
  • the four groups of image-transforming prism assemblies are the first group of image-transforming prism components, the second group of image-transforming prism components, the third group of image-transforming prism components and the fourth group of image-transforming prism components, wherein the first group of image-transforming prism components and the third group of image-transforming prism components
  • the three sets of image-changing prism assemblies are symmetrical about the first center plane of symmetry, wherein the second group of image-changing prism assemblies and the fourth group of image-changing prism assemblies are symmetrical about the second center plane of symmetry, and the first center plane of symmetry is symmetrical to the second center of symmetry.
  • the intersection line of the surfaces coincides with the optical axis;
  • the first set of image-transforming prism assemblies and the third set of image-transforming prism assemblies each include a first right-angle image-converting prism and a second right-angle image-converting prism arranged adjacently above and below.
  • the first right-angle image-converting prism has a first The right-angled surface is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-sided imaging compound prism assembly.
  • the second right-angled surface of the first right-angle rotating image prism is perpendicular to the optical axis of the telecentric imaging lens.
  • the first right-angled surface The inclined surface of the rotating image prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface of the first right-angle rotating image prism is a total reflection surface;
  • the first right-angle surface of the second right-angle rotation prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle rotation prism, and the second right-angle surface of the second right-angle rotation prism is parallel
  • the inclined surface of the second right-angle rotating prism faces away from the optical axis of the telecentric imaging lens and forms a 45-degree angle with it, and the inclined surface of the second right-angle rotating prism is a total reflection surface;
  • the second set of image-transforming prism assemblies and the fourth set of image-transforming prism assemblies each include a third right-angle image-converting prism and a fourth right-angle image-converting prism arranged adjacently above and below.
  • the first part of the third right-angle image-converting prism is The right-angled surface is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-sided imaging compound prism assembly.
  • the second right-angled surface of the third right-angled imaging prism is perpendicular to the optical axis of the telecentric imaging lens.
  • the third right-angled surface The inclined surface of the rotating image prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface of the third right-angle rotating image prism is a total reflection surface;
  • the first rectangular surface of the fourth rectangular image prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second rectangular surface of the third rectangular image prism, and the second rectangular surface of the fourth rectangular image prism is parallel to And far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle rotating prism is close to the optical axis of the telecentric imaging lens and forms an angle of 45 degrees with it.
  • the inclined surface of the fourth right-angle rotating prism is a total reflection surface;
  • the four-sided imaging compound prism assembly is in the shape of a cuboid, and a regular tetrahedron-shaped groove is provided in its lower body.
  • the walls of the groove are total reflection surfaces, and the four side wall surfaces of the four-sided imaging compound prism are imaging inputs.
  • surface, the sky surface of the four-sided imaging compound prism is the imaging output surface;
  • the semiconductor grain is supported by the glass turntable and rotates therewith, and moves below the fourth right-angle image prism and in a direction perpendicular to the optical axis.
  • the optical axis of the imaging lens forms an included angle of 45- ⁇ degrees.
  • the above-mentioned four-sided composite prism assembly is composed of four image-transforming prisms.
  • the image-transforming prisms are all formed by cutting a triangular prism.
  • the cutting plane passes through a point on the first edge of the triangular prism and the other three prisms.
  • the lower end points of the two edges and the first edges of the four image-changing prisms are close to each other to form a four-sided imaging compound prism assembly.
  • the distance d between the lower end of the above-mentioned second right-angle rotation prism or the fourth right-angle rotation prism and the sky surface of the semiconductor grain is 0.5-1.0 mm.
  • the present invention realizes a non-synchronized optical path imaging detection method for both end surfaces and both sides of a semiconductor crystal grain. It is characterized in that: a camera, a telecentric imaging lens, a four-sided imaging compound prism assembly, and four The four-sided imaging compound prism assembly is located on the optical axis of the telecentric imaging lens;
  • the four groups of image-transforming prism assemblies are the first group of image-transforming prism components, the second group of image-transforming prism components, the third group of image-transforming prism components and the fourth group of image-transforming prism components, wherein the first group of image-transforming prism components and the third group of image-transforming prism components
  • the three sets of image-changing prism assemblies are symmetrical about the first center plane of symmetry, wherein the second group of image-changing prism assemblies and the fourth group of image-changing prism assemblies are symmetrical about the second center plane of symmetry, and the first center plane of symmetry is symmetrical to the second center of symmetry.
  • the intersection line of the surfaces coincides with the optical axis;
  • the first set of image-transforming prism assemblies and the third set of image-transforming prism assemblies each include a first right-angle image-converting prism and a second right-angle image-converting prism arranged adjacently above and below.
  • the first right-angle image-converting prism has a first The right-angled surface is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-sided imaging compound prism assembly.
  • the second right-angled surface of the first right-angle rotating image prism is perpendicular to the optical axis of the telecentric imaging lens.
  • the first right-angled surface The inclined surface of the rotating image prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface of the first right-angle rotating image prism is a total reflection surface;
  • the first right-angle surface of the second right-angle rotation prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second right-angle surface of the first right-angle rotation prism, and the second right-angle surface of the second right-angle rotation prism is parallel
  • the inclined surface of the second right-angle rotating prism faces away from the optical axis of the telecentric imaging lens and forms a 45-degree angle with it, and the inclined surface of the second right-angle rotating prism is a total reflection surface;
  • the second set of image-transforming prism assemblies and the fourth set of image-transforming prism assemblies each include a third right-angle image-converting prism and a fourth right-angle image-converting prism arranged adjacently above and below.
  • the first part of the third right-angle image-converting prism is The right-angled surface is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface of the four-sided imaging compound prism assembly.
  • the second right-angled surface of the third right-angled imaging prism is perpendicular to the optical axis of the telecentric imaging lens.
  • the third right-angled surface The inclined surface of the rotating image prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface of the third right-angle rotating image prism is a total reflection surface;
  • the first rectangular surface of the fourth rectangular image prism is perpendicular to the optical axis of the telecentric imaging lens and close to the second rectangular surface of the third rectangular image prism, and the second rectangular surface of the fourth rectangular image prism is parallel to And far away from the optical axis of the telecentric imaging lens, the inclined surface of the fourth right-angle rotating prism is close to the optical axis of the telecentric imaging lens and forms an angle of 45 degrees with it.
  • the inclined surface of the fourth right-angle rotating prism is a total reflection surface;
  • the four-sided imaging compound prism assembly is in the shape of a cuboid, and a regular tetrahedron-shaped groove is provided in its lower body.
  • the walls of the groove are total reflection surfaces, and the four side wall surfaces of the four-sided imaging compound prism are imaging inputs.
  • surface, the sky surface of the four-sided imaging compound prism is the imaging output surface;
  • the semiconductor grain is supported by a glass turntable and rotates therewith, and moves below the fourth right-angle image prism and in a direction perpendicular to the optical axis;
  • the semiconductor die When the semiconductor die is located on the left side of the detection device, and its front end face in the direction of travel is at a given working distance WD from a set of fourth right-angle image prisms, the front end face passes through the set of fourth right-angle image prisms.
  • the third right-angle image-converting prism and the four-sided imaging compound prism assembly are imaged on the camera sensor after being imaged, and the image is the first image;
  • the two sides of the semiconductor grain pass through two sets of oppositely arranged second right-angle image-turning prisms, first right-angle image-turning prisms and four-sided imaging.
  • the compound prism component is imaged on the camera sensor after the image is transferred, and the image is the second image;
  • the distance between its rear end surface in the direction of travel and another set of fourth right-angle image prisms is a given working distance WD, and the rear end surface passes through the fourth right-angle image prism respectively.
  • the third right-angle image-converting prism and the four-sided imaging compound prism assembly are imaged on the camera sensor after being imaged, and the image is the third image;
  • the optical axis of the imaging lens forms an included angle of 45- ⁇ degrees
  • the semiconductor die When the semiconductor die is located on the left side of the detection device, and its front end face in the direction of travel is at a given working distance WD from a set of fourth right-angle image prisms, the front end face passes through the set of fourth right-angle image prisms.
  • the third right-angle image-converting prism and the four-sided imaging compound prism assembly are imaged on the camera sensor after being imaged, and the image is the first image;
  • the two sides of the semiconductor grain pass through two sets of oppositely arranged second right-angle image-turning prisms, first right-angle image-turning prisms and four-sided imaging.
  • the compound prism component is imaged on the camera sensor after the image is transferred, and the image is the second image;
  • the distance between its rear end surface in the direction of travel and another set of fourth right-angle image prisms is a given working distance WD, and the rear end surface passes through the fourth right-angle image prism respectively.
  • the third right-angle image-converting prism and the four-sided imaging compound prism assembly are imaged on the camera sensor after being imaged, and the image is the third image;
  • the present invention realizes a detection station for detecting the two end faces and two sides of the moving crystal grain by using a four-sided imaging compound prism assembly and four groups of rotating image prism assemblies, thereby simplifying the structural complexity of the system. Improves the detection efficiency of the system and reduces the cost of the detection system;
  • the second right-angle rotation prism and the fourth right-angle rotation prism used in this detection device are installed above the glass turntable and the crystal to be tested. They do not need to be in contact with the surface of the crystal grain to be tested, and can realize the contact between the two end surfaces of the crystal grain to be tested and the two sides. Dynamic detection on each side;
  • This detection device plus a station that detects two opposite sides of the grain can realize simultaneous imaging detection of six sides of the grain on one screening machine, effectively reducing the proportion of missed detections.
  • Figures 1 and 2 are schematic structural diagrams of an existing detection device for two opposing surfaces of a semiconductor grain
  • FIGS 3 and 4 are schematic structural diagrams of existing semiconductor grain adjacent surface detection devices
  • Figure 5 is a schematic three-dimensional structural diagram of an embodiment of the device of the present invention.
  • Figure 6 is a schematic cross-sectional structural diagram of the second symmetry center plane Y in Figure 5;
  • Figure 7 is a partial view of Figure 6;
  • Figure 8 is a schematic cross-sectional structural diagram of the first symmetry center plane X in Figure 5;
  • Figure 9 is a partial view of Figure 8.
  • Figure 10 is a schematic structural diagram of another embodiment of Figure 9 (that is, the fourth right-angle rotation prism rotates by an angle ⁇ relative to Figure 9);
  • Figure 11 is a schematic structural diagram of another embodiment of Figure 7 (that is, the second right-angle rotation prism rotates by an angle ⁇ relative to Figure 7);
  • Figure 12 is a schematic three-dimensional structural diagram of a four-sided imaging compound prism assembly
  • Figure 13 is a schematic three-dimensional structural diagram of a rotating image prism in Figure 12;
  • Figure 14 is the first image of a semiconductor die collected by the camera target surface.
  • Figure 15 is a second image of a semiconductor grain collected by the camera target surface.
  • Figure 16 is the third image of the semiconductor grain collected by the camera target surface.
  • Figure 17 is an image of two end surfaces and two side surfaces of a semiconductor die formed by combining three images.
  • the present invention realizes an optical device for non-synchronous optical path imaging detection of both end surfaces and both sides of a semiconductor crystal grain.
  • a camera 1 In the optical path direction of the optical device, a camera 1, a telecentric imaging lens 2, and a four-sided imaging lens are arranged in sequence.
  • Compound prism assembly 3 In the optical path direction of the optical device, a camera 1, a telecentric imaging lens 2, and a four-sided imaging lens are arranged in sequence.
  • Compound prism assembly 3 four sets of image-converting prism assemblies K, semiconductor crystal grains 6 and glass object turntable 7.
  • the four-sided image-converting compound prism assembly 3 is located on the optical axis A of the telecentric imaging lens.
  • the semiconductor crystal grain 6 is in the shape of a rectangular parallelepiped or a cube, and includes a front end face 6a, a rear end face 6b, two side faces 6c and 6d, an upper face and a bottom face. This application can focus on the front end face 6a, the rear end face 6b and both side faces of the semiconductor crystal grain. Detection of 6c and 6d; the semiconductor grain 6 is supported by the glass turntable 7 and rotates accordingly. The glass turntable 7 can be driven by a motor to rotate continuously or intermittently.
  • the camera 1 can be a CMOS camera or a CCD camera, etc. .
  • the four groups of image-transforming prism assemblies K are respectively the first group of image-transforming prism components K1, the second group of image-transforming prism components K2, the third group of image-transforming prism components K3 and the fourth group of image-transforming prism components K4.
  • the image prism assembly K1 and the third group of image-transforming prism assemblies K3 are symmetrical about the first center plane of symmetry The intersection line of one symmetry center plane and the second symmetry center plane coincides with the optical axis A.
  • the first group of imaging prism components K1 and the third group of imaging prism components K3 each include a first right-angle imaging prism 4a and a second right-angle imaging prism 4b arranged adjacently above and below (as shown in Figures 6 and 7 ), the first right-angle surface 401 of the first right-angle imaging prism 4a is parallel to the optical axis of the telecentric imaging lens and close to the imaging input surface 301 of the four-sided imaging compound prism assembly (the four-sided imaging compound prism assembly is cube-shaped, It has four imaging input surfaces 301.
  • the two opposite surfaces of the four imaging input surfaces 301 are also symmetrical about the first symmetry center plane X or the second symmetry center plane Y.
  • the first right-angle image prism The inclined surface 403 faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface 403 of the first right-angle imaging prism is a total reflection surface.
  • the first right-angle surface 404 of the second right-angle rotation prism 4b is perpendicular to the optical axis of the telecentric imaging lens and is close to and parallel to the second right-angle surface 402 of the first right-angle rotation prism.
  • the second right-angle rotation prism The second right-angled surface 405 is parallel and close to the optical axis of the telecentric imaging lens.
  • the second right-angled surface 405 is also perpendicular to the aforementioned first right-angled surface 404.
  • the inclined surface 406 of the second right-angled imaging prism faces away from the optical axis of the telecentric imaging lens. And forming an included angle of 45 degrees with it, the inclined surface of the second right-angle image prism is a total reflection surface.
  • the second group of imaging prism components K2 and the fourth group of imaging prism components K4 each include a third right-angle rotation prism 5a and a fourth right-angle rotation prism 5b arranged adjacently above and below (as shown in Figures 8 and 9 ), the first right-angle surface 501 of the third right-angle rotation prism 5a is parallel to the optical axis of the telecentric imaging lens and is close to and parallel to an imaging input surface 301 of the four-sided imaging compound prism assembly.
  • the second right-angled surface 502 of the image prism is perpendicular to the optical axis of the telecentric imaging lens.
  • the inclined surface 503 of the third right-angle image prism faces away from the optical axis of the telecentric imaging lens and forms an included angle of 45 degrees with it.
  • the inclined surface is a total reflection surface.
  • the first right-angle surface 504 of the fourth right-angle rotation prism 5b is perpendicular to the optical axis of the telecentric imaging lens and is close to and parallel to the second right-angle surface 502 of the third right-angle rotation prism.
  • the fourth right-angle rotation prism The second right-angled surface 505 is parallel to and away from the optical axis of the telecentric imaging lens.
  • the second right-angled surface 505 is also perpendicular to the aforementioned first right-angled surface 504.
  • the inclined surface 506 of the fourth right-angled imaging prism is close to the optical axis of the telecentric imaging lens and is Instead of forming an included angle of 45 degrees, the inclined surface of the fourth right-angle image prism is a total reflection surface.
  • the four-sided imaging compound prism assembly is in the shape of a cuboid or a cube, and a regular tetrahedron-shaped groove 302 is provided in its lower body.
  • the wall 303 of the groove is a total reflection surface, and the four sides of the four-sided imaging compound prism are
  • the side wall surfaces are the imaging input surfaces 301.
  • the two opposite surfaces of the four imaging input surfaces 301 are also symmetrical about the first symmetry center plane X or the second symmetry center plane Y.
  • the sky surface 304 of the four-sided imaging compound prism is the imaging output surface.
  • the sky surface 304 of the four-sided imaging compound prism is perpendicular to the optical axis A.
  • the semiconductor grain is supported by the glass turntable and rotates therewith, and moves below the fourth right-angle rotation prism 5b and in a direction perpendicular to the optical axis.
  • the above-mentioned right-angle surfaces, imaging input surfaces, and imaging output surfaces can transmit light, and the walls of each inclined surface or groove can achieve their total reflection function by being coated with a total reflection film or plated with a total reflection film layer.
  • first, second, third, and fourth right-angle image-rotating prisms are arranged up and down, and may be aligned or misaligned in the left-right direction, as shown in Figure 7
  • the first right-angle rotation prism and the second right-angle rotation prism shown in Figure 9 are misaligned in the left-right direction
  • the third right-angle rotation prism and the fourth right-angle rotation prism shown in Figure 9 are not misaligned in the left-right direction (a certain distance of misalignment is allowed)
  • the specific relative positions are adjusted to realize that images of the two end surfaces and two side surfaces of the semiconductor die 6 can be collected on the camera sensor.
  • the above-mentioned second right-angle image rotation prism and the fourth right-angle image rotation prism are compared with the previous embodiment (i.e.
  • the embodiment shown in Figures 6-9) can rotate at an angle ⁇ , and the above ⁇ can be between 1-45 degrees, preferably ⁇ between 1-5 degrees, so that the second right-angle rotation prism and the fourth right-angle rotation prism
  • the inclined surfaces of the second right-angle rotating prism and the fourth right-angle rotating prism form an angle of 42 degrees with the optical axis of the telecentric imaging lens. angle.
  • the four-sided composite prism assembly 3 is in the shape of a cuboid or a cube, and a regular tetrahedron-shaped groove 302 is provided in its lower body.
  • the wall 303 of the groove is a total reflection surface.
  • the four-sided composite prism The four side wall surfaces are the imaging input surface 301, and the sky surface 304 of the four-sided imaging compound prism is the imaging output surface; the specific four-sided imaging compound prism assembly 3 can be composed of four image transfer prisms 305 (as shown in Figure 12 , shown in 13), when the four-sided imaging compound prism component is a cube, it is better to use four identical image-transforming prisms.
  • the four identical image-transforming prisms are all formed by cutting right-angled triangular prisms, and the cutting surface (also That is, the wall surface 303 of the groove formed later passes through a point 306 on the first edge of the triangular prism and the lower end points 307 of the other two edges of the triangular prism.
  • the four-sided image compound prism assembly 3 is formed by close bonding (as shown in Figures 12 and 13).
  • the semiconductor grain 6 is supported and rotated by a glass turntable 7.
  • the glass turntable 7 can be driven and rotated by a motor or the like.
  • the semiconductor grain 6 is below the second and fourth right-angle image prisms and perpendicular to the The direction of the optical axis moves.
  • the camera starts to capture the end-face image of the semiconductor die.
  • WD2 42mm. This WD2 is the second right-angle turn when the semiconductor die is located directly below the camera. The distance between the lower end of the prism and the side of the semiconductor grain.
  • This application adjusts the distance between the two end faces and the two side images from the center of the imaging sensor of the CMOS camera 1 by adjusting the position of the imaging compound prism assembly 3 of the device up and down, so as to image the off-axis point close to the camera sensor surface.
  • the light path direction is:
  • the front end surface 6a passes through the fourth right-angle rotation prism 5b (incidence from the second right-angle surface 505 of the fourth right-angle rotation prism 5b, reflected by the inclined plane 506 of the fourth right-angle rotation prism 5b, from the fourth right-angle rotation prism 5b)
  • the first right-angle surface 504 of the image prism 5b is emitted
  • the third right-angle image rotation prism 5a is incident from the second right-angle surface 502 of the third right-angle image rotation prism 5a, and is reflected by the inclined surface 503 of the third right-angle image rotation prism 5a, from The third right-angle image-converting prism 5a emerges from the first right-angle surface 501) and the four-sided imaging compound prism assembly 3
  • the right-angle mirror prism 4a (incident from the second right-angle surface 402 of the first right-angle mirror prism 4a, reflected by the inclined plane 403 of the first right-angle mirror prism 4a, and emitted from the first right-angle plane 401 of the first right-angle mirror prism 4a ) and the four-sided imaging compound prism assembly 3 (incident from an imaging input surface 301, reflected by the wall surface 303, and emitted from the sky surface 304) are transformed and then passed through the telecentric imaging lens 2, and finally imaged on the camera sensor.
  • the image is In the second image (shown in Figure 15), one image of the semiconductor grain forms two side images at this station;
  • the third right-angle rotation prism 5a is incident from the second right-angle surface 502 of the third right-angle rotation prism 5a, and is reflected by the inclined surface 503 of the third right-angle rotation prism 5a, Emitted from the first right-angle surface 501 of the third right-angle image-converting prism 5a
  • the four-sided imaging compound prism assembly 3 incident from an imaging input surface 301, reflected by the wall surface 303, and emitted from the sky surface 304) after the image is converted, Center the imaging lens 2, and finally image the image on the camera sensor, which is the third image (as shown in Figure 16);
  • imaging of the front and rear end faces and two sides of the conductor grain in the traveling direction is formed (as shown in Figure 17), that is, the two end faces of the semiconductor grain and Imaging inspection of both sides.
  • the inclined surfaces of the second right-angle rotation prism and the fourth right-angle rotation prism are formed into telecentric images.
  • the optical axis of the lens forms an included angle of 42; where the optical path direction is, as mentioned above; by rotating the second right-angle rotation prism and the fourth right-angle rotation prism at an angle, off-axis objects can be converted into on-axis objects, This allows for better imaging in the center area of the camera sensor.
  • the present invention realizes a detection station for detecting the two end faces and two sides of the moving crystal grain by using a four-sided imaging compound prism assembly and four groups of rotating image prism assemblies, thereby simplifying the structural complexity of the system. Improves the detection efficiency of the system and reduces the cost of the detection system;
  • the second right-angle rotation prism and the fourth right-angle rotation prism used in this detection device are installed above the glass turntable and the crystal to be tested. They do not need to be in contact with the surface of the crystal grain to be tested, and can realize the contact between the two end surfaces of the crystal grain to be tested and the two sides. Dynamic detection on each side;
  • This detection device plus a station that detects two opposite sides of the grain can realize simultaneous imaging detection of six sides of the grain on one screening machine, effectively reducing the proportion of missed detections.

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Abstract

L'invention concerne un instrument optique se rapportant au domaine des semi-conducteurs, ainsi qu'un dispositif optique et un procédé de mise en œuvre de détection d'imagerie asynchrone à chemin optique égal entre deux faces d'extrémité et deux faces latérales d'une matrice semi-conductrice. Une caméra (1), un objectif d'imagerie télécentrique (2), un ensemble prisme composite à quatre faces à image combinée (3), quatre groupes d'ensembles prisme d'image rotative (K), une puce semi-conductrice (6) et un disque rotatif supportant un verre (7) sont disposés séquentiellement dans la direction du chemin optique du dispositif optique, et l'ensemble prisme composite à quatre faces à image combinée (3) est situé sur l'axe optique (A) de l'objectif d'imagerie télécentrique (2). Le dispositif et le procédé de détection simplifient la complexité structurelle d'un système de criblage et réduisent les coûts du système de criblage.
PCT/CN2022/137093 2022-05-12 2022-12-07 Dispositif optique et procédé de mise en œuvre de détection d'imagerie asynchrone à chemin optique égal entre deux faces d'extrémité et deux faces latérales d'un dé semi-conducteur WO2023216573A1 (fr)

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