WO2023216463A1 - Silicon wafer bearing device in photoetching device - Google Patents

Silicon wafer bearing device in photoetching device Download PDF

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Publication number
WO2023216463A1
WO2023216463A1 PCT/CN2022/114996 CN2022114996W WO2023216463A1 WO 2023216463 A1 WO2023216463 A1 WO 2023216463A1 CN 2022114996 W CN2022114996 W CN 2022114996W WO 2023216463 A1 WO2023216463 A1 WO 2023216463A1
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WIPO (PCT)
Prior art keywords
water channel
channel section
silicon wafer
carrying device
equipment according
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PCT/CN2022/114996
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French (fr)
Chinese (zh)
Inventor
王军
张利
朱啸爽
Original Assignee
北京华卓精科科技股份有限公司
北京优微精密测控技术研究有限公司
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Publication of WO2023216463A1 publication Critical patent/WO2023216463A1/en

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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25DREFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
    • F25D17/00Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
    • F25D17/02Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of silicon wafer cooling, and specifically to a silicon wafer carrying device in a photolithography equipment.
  • the silicon wafer carrying device in the lithography equipment is an important component in the ultra-precision lithography equipment and is a key factor that directly affects the success of the silicon wafer exposure, which is the molding object of the lithography machine.
  • the purpose of this application is to provide a silicon wafer carrying device in a photolithography equipment to alleviate the technical problem of temperature imbalance existing in the silicon wafer carrying device in the photolithography equipment in the prior art.
  • the silicon wafer carrying device in the photolithography equipment provided by this application includes a carrying body, and a water channel is provided inside the carrying body.
  • the water channel has a front-end water channel section, a middle water channel section, and a back-end water channel section that are connected in sequence.
  • the front water channel section extends from a position close to the edge of the carrier body to the middle of the carrier body.
  • One end of the front water channel section close to the edge of the carrier body is a cooling liquid inlet.
  • the other end is connected to one end of the middle water channel section, the other end of the middle water channel section is connected to one end of the rear end water channel section, the other end of the rear end water channel section is a coolant outlet, and the rear end water channel Segments surround the periphery of the central waterway segment.
  • a first baffle bar is provided in the front-end water channel section, the first baffle bar is arranged along the extension direction of the front-end water channel section, and the first baffle bar is configured to separate the front-end water channel section into at least Two first diversion channels.
  • the first baffle bar is configured to separate the front-end water channel section into two first diversion channels with equal cross-sectional areas;
  • the ratio of the sum of the cross-sectional areas of each first branch channel to the cross-sectional area of the middle water channel section ranges from 0.8 to 1.
  • the carrier body is an integrally formed structure, and/or the carrier body is made of silicon carbide, aluminum oxide, or silicon nitride, and/or the coolant outlet is close to
  • the cooling liquid inlet is provided, and/or the ratio of the volume of the water channel to the volume of the carrier ranges from 3% to 10%.
  • the middle water channel section includes several rings of annular water channel sections, and the corresponding rings of the annular water channel sections have openings to form two ends; the innermost ring of the annular water channel section and The front water channel sections are connected, the annular water channel sections of each circle are connected in sequence from the inside to the outside through the two open ends, and the annular water channel section of the outermost circle is connected with the rear end water channel section.
  • the parts near both ends of the front-end water channel section are arc-shaped water channels, and the middle part is a straight water channel, and the arc-shaped water channel and the linear water channel make a smooth transition;
  • the liquid inlet end of the innermost annular water channel section is tangent to the liquid outlet end of the front end water channel section;
  • the open ends of two adjacent rings of the annular water channel sections are connected through a first arc-shaped transition section;
  • the outermost annular water channel section and the rear end water channel section are connected through a second arc-shaped transition section;
  • the trajectory of the rear end water channel section is circular.
  • the difference between the cross-sectional area of the first arc-shaped transition section and the cross-sectional area of the annular water channel section is greater than zero, and the cross-sectional area of the second arc-shaped transition section is The difference from the cross-sectional area of the annular water channel section is greater than zero.
  • the cross-sectional areas for fluid to pass through the front-end water channel section, the annular water channel section and the rear-end water channel section are all equal.
  • a second baffle bar is provided in the outermost ring of the annular water channel section, and the second baffle bar is provided along the extension direction of the annular water channel section.
  • the baffles are configured to divide the outermost annular water channel section into at least two second diverting channels.
  • the spacing between two adjacent rings of the annular water channel segments is a first spacing
  • the spacing between the outermost ring of the annular water channel segments and the rear end water channel segment is a second spacing
  • any The absolute value of the difference between the two first spacings is greater than zero
  • the absolute value of the difference between any one of the first spacings and the second spacing is greater than zero.
  • the silicon wafer carrier device in the lithography equipment provided by this application has a water channel inside the carrier body, which is more in line with the space and precision requirements in the application of lithography equipment.
  • the flow rate is relatively fast.
  • the setting of the first baffle bar blocks the incoming coolant and at the same time strengthens the front-end water channel of the carrier body.
  • the stiffness of the segment can further alleviate the problem of structural deformation caused by water flow impact, thereby reducing the local surface shape change of the silicon wafer and improving the exposure quality of the silicon wafer.
  • the water flow at the inlet of the coolant is relatively fast. If it is placed close to the edge of the carrier, it will not easily cause the carrier to deform. Indirectly, it will also alleviate the problem of local surface shape changes of the silicon wafer and facilitate the improvement of the surface area of the silicon wafer. Type accuracy, thereby improving the exposure quality of silicon wafers.
  • the coolant inlet close to the edge of the carrier body has less impact on the temperature field than locating it in the middle.
  • the end coolant outlet of the rear end water channel section at the periphery will also be close to the edge of the carrier, and will have less impact on the temperature field. Therefore, the temperature of each part of the carrier will be more balanced, which can ensure a balanced temperature on the lower surface of the silicon wafer. In turn, the silicon wafer placed on the carrier will be It is not easy to cause local facial changes.
  • the front-end water channel section is used to direct the coolant flowing in from the coolant inlet at the edge to the middle of the carrier, and then flows along the middle water channel section to the peripheral rear-end water channel section.
  • the silicon wafer can be cooled better
  • the effect is to improve the exposure quality of silicon wafers.
  • Figure 1 is a water channel layout diagram of a carrier provided by an embodiment of the present application.
  • FIG. 2 is a cross-sectional view of a carrier carrying silicon wafers provided by an embodiment of the present application.
  • 100-carrying body 110-front water channel section; 111-coolant inlet; 112-first baffle bar; 113-first diversion channel; 120-annular water channel section; 121-second baffle bar; 122-second Split channel; 130-rear end water channel section; 131-coolant outlet; 140-first arc-shaped transition section; 150-second arc-shaped transition section; 200-silicon wafer.
  • this embodiment provides a silicon wafer carrying device in a photolithography equipment, which includes a carrying body 100.
  • a water channel is provided inside the carrying body 100, and the water channel has a front-end water channel section 110, a middle section, and a front-end water channel section 110 that are connected in sequence.
  • the front water channel section 110 extends from a position close to the edge of the carrier 100 to the middle of the carrier 100 .
  • One end of the front water channel section 110 close to the edge of the carrier 100 is the coolant inlet 111 , and the other end of the front water channel section 110 is connected to the middle water channel.
  • a first baffle bar 112 is disposed in the front-end water channel section 110 .
  • the first baffle bar 112 is disposed along the extension direction of the front-end water channel section 110 .
  • the first baffle bar 112 is configured to separate the front-end water channel section 110 into at least two first baffle bars 112 . Diversion channel 113.
  • the silicon wafer carrying device in the lithography equipment provided by this embodiment has a water channel inside the carrying body 100, which is more in line with the space and precision requirements in the application of lithography equipment.
  • the flow rate is relatively fast.
  • the arrangement of the first baffle 112 blocks the incoming coolant and at the same time strengthens the carrier body.
  • the stiffness of the front-end water channel section 110 of the silicon wafer 100 further alleviates the problem of structural deformation caused by water flow impact, thereby reducing the local surface shape change of the silicon wafer 200 and improving the exposure quality of the silicon wafer 200 .
  • the water flow at the coolant inlet 111 is relatively fast, and it is arranged close to the edge of the carrier 100, which will not easily cause the carrier 100 to deform. Indirectly, it will also alleviate the problem of local surface changes of the silicon wafer 200 and facilitate improvement.
  • the surface shape accuracy of the silicon wafer 200 is improved, thereby improving the exposure quality of the silicon wafer 200 .
  • the coolant inlet 111 close to the edge of the carrier 100 has less impact on the temperature field than arranging it in the middle; accordingly, the end of the rear end water channel section 130 at the periphery
  • the coolant outlet will be close to the edge of the carrier 100 and will have less influence on the temperature field. Therefore, the temperature of each part of the carrier 100 is relatively balanced, which can ensure a balanced temperature on the lower surface of the silicon wafer.
  • the silicon wafer 200 on the silicon wafer 100 is less likely to cause local surface shape changes.
  • the front water channel section 110 is used to guide the cooling liquid flowing in from the cooling liquid inlet 111 at the edge to the middle of the carrier 100, and then flows along the middle water channel section to the peripheral rear end water channel section 130.
  • the silicon wafer 200 can A better cooling effect is obtained, which facilitates improving the exposure quality of the silicon wafer 200 .
  • the first baffles 112 can be used to divide the front water channel section 110 into two first branch channels 113 with equal cross-sectional areas to further optimize the buffering effect.
  • the ratio range of the sum of the cross-sectional areas of each first branch channel 113 and the cross-sectional area of the middle water channel section can be set to 0.8-1, which can not only achieve a better buffering effect, but also ensure Coolant flow rate to ensure proper cooling effect.
  • the carrier 100 can be configured as a one-piece structure.
  • the single material of the carrier 100 can be ensured, and the expansion coefficients and thermal conductivities of various parts of the carrier 100 will not be different due to different materials.
  • the carrier 100 itself is not easy to deform; on the other hand, the carrier 100 is not spliced, and the carrier 100 will not be deformed due to the splicing process. Therefore, the silicon wafer 200 placed on the carrier 100 is not easy to change in surface shape. .
  • the carrier 100 provided in this embodiment can be made of a material close to the physical properties of the silicon wafer 200. In this way, it can adapt to the material requirements of thermal conductivity and expansion coefficient performance required by the exposure environment of the silicon wafer 200, and reduce the physical properties of the material itself. The deformation effect on the silicon wafer 200 caused by different characteristics. In addition, because the selected material has similar physical properties to the silicon wafer 200, it will not bring ion contamination to the silicon wafer 200.
  • silicon carbide, aluminum oxide or silicon nitride can be used as the material of the carrier 100.
  • silicon carbide, aluminum oxide or silicon nitride can be used as the material of the carrier 100.
  • other materials with similar physical properties to the silicon wafer 200 can also be selected to manufacture the carrier 100.
  • the cooling liquid outlet 131 can be disposed close to the cooling liquid inlet 111 so that the temperature of various parts of the carrier 100 is more balanced, which can further alleviate the problem of local surface shape changes of the silicon wafer 200 .
  • the ratio range of the volume of the water channel to the volume of the carrier 100 can be set to 3%-10% to ensure better silicon wafer exposure quality.
  • the trajectory of the water channel can be set as a smooth curve to reduce the impact of the coolant on the side wall of the water channel, and alleviate the problem of the deformation of the carrier 100 caused by the impact of the water flow on the side wall of the water channel. Therefore, the silicon wafer 200 is less likely to be deformed. The problem of local facial shape changes.
  • annular water channel sections 120 can be provided.
  • the corresponding rings of these annular water channel sections 120 all have openings, that is, the annular water channel section 120 is a non-closed loop structure with two ends;
  • the annular water channel sections 120 of the circle are connected with the front water channel section 110.
  • the annular water channel sections 120 of each circle are connected in sequence from the inside to the outside through the two open ends, and the outermost ring annular water channel section 120 is connected with the rear water channel section 130.
  • the trajectory of the central water channel section is set as a number of sequentially connected annular water channel sections 120.
  • the cooling liquid arriving at the central water channel section rotates and flows back and forth from the inside to the outside, cooling the silicon wafer 200.
  • the effect is better; on the other hand, the annular design reduces the impact force of the coolant carried by the side wall of the water channel as much as possible, thus further improving the exposure quality of the silicon wafer 200 .
  • the liquid inlet end of the innermost annular water channel section 120 and the liquid outlet end of the front end water channel section 110 can be set to be tangential, so as to reduce the turning angle at the transition and reduce steering as much as possible, thereby reducing The impact of water flow alleviates the deformation problem caused by impact.
  • the open ends of two adjacent rings of annular water channel sections 120 can be connected through the first arc-shaped transition section 140; in addition, the outermost ring of annular water channel sections 140 and the rear end water channel section 130 can be connected through the second arc-shaped transition section 140.
  • the transition section 150 is connected, and the trajectory of the rear end water channel section 130 can also be set to be circular. The above setting can not only reduce the turning angle at the transition, but also reduce the steering to the greatest extent and reduce the impact force of the water flow as much as possible. At the same time, Makes the coolant flow smoother.
  • the cross-sectional area of the first arc-shaped transition section 140 can be set to be larger than the cross-sectional area of the annular water channel section 120.
  • the cross-sectional area of the second arc-shaped transition section 150 can be set to be larger than the annular water channel section. 120 cross-sectional area.
  • the cross-sectional area of 150 can reduce the flow resistance, make the coolant flow more stable, and ensure the temperature uniformity to a certain extent, thereby ensuring the surface accuracy of the entire silicon wafer 200.
  • the cross-sectional areas for fluid passage of the front-end water channel section 110, the annular water channel section 120, and the rear-end water channel section 130 are all set to be equal, so as to reduce the impact of water flow on the side walls of the water channel, thereby reducing the load-bearing capacity.
  • the degree of deformation of the body 100 makes it difficult for the silicon wafer 200 to cause local surface shape changes.
  • the parts near both ends of the front water channel section 110 can be set as an arc water channel, and the middle part of the front end water channel section 110 can be set as a straight water channel, so as to smoothly transition the arc water channel and the straight water channel, with less steering, and at the same time, make The flow of coolant is also smoother.
  • a second baffle bar 121 can be disposed in the outermost annular water channel section 120, and the second baffle bar 121 is disposed along the extension direction of the annular water channel section 120, and the second baffle bar 121 is used to The outermost annular water channel section 120 is divided into at least two second branch channels 122 .
  • the arrangement of the second spacer bars 121 can reduce the temperature gradient of the carrier 100 and improve the exposure quality of the silicon wafer 200 .
  • the distance between two adjacent rings of annular water channel segments 120 is defined as the first spacing
  • the spacing between the outermost ring of annular water channel segments 120 and the rear end water channel segment 130 is defined as the second spacing.
  • the difference between any two first spacings is The absolute value of is set to be greater than zero, that is, the size of any first spacing is different; at the same time, the absolute value of the difference between any first spacing and the second spacing is set to be greater than zero, that is, the size of any first spacing is The sizes are different from the second spacing. In this way, the silicon wafer 200 placed on the carrier 100 can obtain a better exposure effect.
  • the cooling liquid outlet 131 can be disposed close to the cooling liquid inlet 111 so that the temperature of various parts of the carrier 100 is more balanced, which can further alleviate the problem of local surface shape changes of the silicon wafer 200 .
  • the ratio range of the volume of the water channel to the volume of the carrier 100 can be set to 3%-10% to ensure better silicon wafer exposure quality.
  • a control board with a temperature sensor, heating wire, etc. is installed under the carrier, which can control the silicon wafer exposure environment at 22°C ⁇ 0.1°C, with temperature stability ⁇ 35mK/25s, and surface deformation of the silicon wafer less than 7.2nm. , in order to achieve the optimal configuration that is beneficial to the silicon wafer exposure work.
  • the silicon wafer carrying device in the photolithography equipment provided in this embodiment is not easily deformed and has a balanced temperature, which can improve the surface accuracy of the silicon wafer, thereby improving the exposure quality of the silicon wafer.

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Abstract

A silicon wafer bearing device in a photoetching device. The silicon wafer bearing device comprising a bearing body (100), a water channel being formed in the bearing body (100), wherein the water channel is provided with a front-end water channel section (110), a middle water channel section and a rear-end water channel section (130) which are in communication in sequence; the front-end water channel section (110) extends to the middle of the bearing body (100) from an edge part close to the bearing body (100); the end of the front-end water channel section (110) that is close to the edge of the bearing body (100) is a cooling liquid inlet (111), and the other end of the front-end water channel section (110) is in communication with one end of the middle water channel section; the other end of the middle water channel section is in communication with one end of the rear-end water channel section (130), and the other end of the rear-end water channel section (130) is a cooling liquid outlet (131); the rear-end water channel section (130) surrounds the periphery of the middle water channel section; and the front-end water channel section (110) is internally provided with a first barrier strip (112), which is arranged in an extending direction of the front-end water channel section (110) and divides the front-end water channel section (110) into at least two first shunt channels (113).

Description

一种光刻设备中的硅片承载装置Silicon wafer carrying device in photolithography equipment
相关申请的交叉引用Cross-references to related applications
本申请要求于2022年05月11日提交中国专利局的申请号为2022105084629、名称为“一种光刻设备中的硅片承载装置”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims priority to the Chinese patent application with application number 2022105084629 and titled "A silicon wafer carrying device in lithography equipment" submitted to the China Patent Office on May 11, 2022, the entire content of which is incorporated by reference. in this application.
技术领域Technical field
本申请涉及硅片冷却技术领域,具体而言,涉及一种光刻设备中的硅片承载装置。The present application relates to the technical field of silicon wafer cooling, and specifically to a silicon wafer carrying device in a photolithography equipment.
背景技术Background technique
光刻设备中的硅片承载装置属于超精密光刻设备中的重要部件,是直接影响光刻机的成形对象-硅片曝光成功与否的关键因素。The silicon wafer carrying device in the lithography equipment is an important component in the ultra-precision lithography equipment and is a key factor that directly affects the success of the silicon wafer exposure, which is the molding object of the lithography machine.
目前,对硅片进行冷却的承载装置有外接冷却系统与内置冷却系统两种,对于光刻设备应用中,涉及到空间及精度要求,目前,更多是采用内置冷却水路,通过往内置冷却水路中通入冷却液,实现对置于光刻设备中的硅片承载装置上的硅片进行冷却的效果。然而,现有的光刻设备中的硅片承载装置中的冷却水路,温度不均衡,容易导致硅片存在曝光质量缺陷或有报废的风险。Currently, there are two types of load-bearing devices for cooling silicon wafers: external cooling systems and built-in cooling systems. For the application of photolithography equipment, space and precision requirements are involved. At present, more built-in cooling water channels are used, and the built-in cooling water channels are used. The cooling liquid is passed through to achieve the effect of cooling the silicon wafer placed on the silicon wafer carrying device in the photolithography equipment. However, the temperature of the cooling water path in the silicon wafer carrying device in existing photolithography equipment is uneven, which can easily lead to exposure quality defects or the risk of scrapping the silicon wafer.
综上,如何克服现有的光刻设备中的硅片承载装置的上述缺陷是本领域技术人员亟待解决的技术问题。To sum up, how to overcome the above-mentioned defects of the silicon wafer carrying device in the existing photolithography equipment is an urgent technical problem to be solved by those skilled in the art.
发明内容Contents of the invention
本申请的目的在于提供一种光刻设备中的硅片承载装置,以缓解现有技术中的光刻设备中的硅片承载装置存在的温度不均衡的技术问题。The purpose of this application is to provide a silicon wafer carrying device in a photolithography equipment to alleviate the technical problem of temperature imbalance existing in the silicon wafer carrying device in the photolithography equipment in the prior art.
本申请提供的光刻设备中的硅片承载装置,包括承载体,所述承载体 的内部开设有水道,所述水道具有依次连通的前端水道段、中部水道段和后端水道段。The silicon wafer carrying device in the photolithography equipment provided by this application includes a carrying body, and a water channel is provided inside the carrying body. The water channel has a front-end water channel section, a middle water channel section, and a back-end water channel section that are connected in sequence.
所述前端水道段由靠近所述承载体的边缘的部位延伸至所述承载体的中部,所述前端水道段的靠近所述承载体的边缘的一端为冷却液入口,所述前端水道段的另一端与所述中部水道段的一端连通,所述中部水道段的另一端与所述后端水道段的一端连通,所述后端水道段的另一端为冷却液出口,所述后端水道段环绕在所述中部水道段的外围。The front water channel section extends from a position close to the edge of the carrier body to the middle of the carrier body. One end of the front water channel section close to the edge of the carrier body is a cooling liquid inlet. The other end is connected to one end of the middle water channel section, the other end of the middle water channel section is connected to one end of the rear end water channel section, the other end of the rear end water channel section is a coolant outlet, and the rear end water channel Segments surround the periphery of the central waterway segment.
所述前端水道段内设置有第一隔档条,所述第一隔档条沿所述前端水道段的延伸方向设置,所述第一隔档条配置成将所述前端水道段分隔为至少两个第一分流通道。A first baffle bar is provided in the front-end water channel section, the first baffle bar is arranged along the extension direction of the front-end water channel section, and the first baffle bar is configured to separate the front-end water channel section into at least Two first diversion channels.
优选地,作为一种可实施方式,所述第一隔档条配置成将所述前端水道段分隔为横截面积相等的两个所述第一分流通道;Preferably, as an implementation manner, the first baffle bar is configured to separate the front-end water channel section into two first diversion channels with equal cross-sectional areas;
和/或,各个所述第一分流通道的横截面积的总和,与所述中部水道段的横截面积的比值范围为0.8-1。And/or, the ratio of the sum of the cross-sectional areas of each first branch channel to the cross-sectional area of the middle water channel section ranges from 0.8 to 1.
优选地,作为一种可实施方式,所述承载体为一体成型结构,和/或,所述承载体的材质为碳化硅、氧化铝或氮化硅,和/或,所述冷却液出口靠近所述冷却液入口设置,和/或,所述水道的体积与所述承载体的体积的比值范围为3%-10%。Preferably, as an implementation manner, the carrier body is an integrally formed structure, and/or the carrier body is made of silicon carbide, aluminum oxide, or silicon nitride, and/or the coolant outlet is close to The cooling liquid inlet is provided, and/or the ratio of the volume of the water channel to the volume of the carrier ranges from 3% to 10%.
优选地,作为一种可实施方式,所述中部水道段包括若干圈环形水道段,所述环形水道段对应的环形均具有开口,形成两个端部;最内圈的所述环形水道段与所述前端水道段连通,各圈所述环形水道段通过两个开口端由内而外依次连通,最外圈的所述环形水道段与所述后端水道段连通。Preferably, as an implementation method, the middle water channel section includes several rings of annular water channel sections, and the corresponding rings of the annular water channel sections have openings to form two ends; the innermost ring of the annular water channel section and The front water channel sections are connected, the annular water channel sections of each circle are connected in sequence from the inside to the outside through the two open ends, and the annular water channel section of the outermost circle is connected with the rear end water channel section.
优选地,作为一种可实施方式,所述前端水道段的靠近两端的部位为弧形水道,中间部位为直线水道,所述弧形水道与所述直线水道平滑过渡;Preferably, as an implementation method, the parts near both ends of the front-end water channel section are arc-shaped water channels, and the middle part is a straight water channel, and the arc-shaped water channel and the linear water channel make a smooth transition;
和/或,最内圈的所述环形水道段的进液端与所述前端水道段的出液端相切;And/or, the liquid inlet end of the innermost annular water channel section is tangent to the liquid outlet end of the front end water channel section;
优选地,作为一种可实施方式,相邻两圈所述环形水道段的开口端通过第一弧形过渡段连通;Preferably, as an implementation manner, the open ends of two adjacent rings of the annular water channel sections are connected through a first arc-shaped transition section;
和/或,最外圈的所述环形水道段与所述后端水道段通过第二弧形过渡段连通;And/or, the outermost annular water channel section and the rear end water channel section are connected through a second arc-shaped transition section;
和/或,所述后端水道段的轨迹为环形。And/or, the trajectory of the rear end water channel section is circular.
优选地,作为一种可实施方式,所述第一弧形过渡段的横截面积与所述环形水道段的横截面积的差值大于零,所述第二弧形过渡段的横截面积与所述环形水道段的横截面积的差值大于零。Preferably, as an implementation manner, the difference between the cross-sectional area of the first arc-shaped transition section and the cross-sectional area of the annular water channel section is greater than zero, and the cross-sectional area of the second arc-shaped transition section is The difference from the cross-sectional area of the annular water channel section is greater than zero.
优选地,作为一种可实施方式,所述前端水道段、所述环形水道段和所述后端水道段的供流体通过的横截面积均相等。Preferably, as an implementation manner, the cross-sectional areas for fluid to pass through the front-end water channel section, the annular water channel section and the rear-end water channel section are all equal.
优选地,作为一种可实施方式,最外圈的所述环形水道段内设置有第二隔档条,所述第二隔档条沿所述环形水道段的延伸方向设置,所述第二隔档条配置成将最外圈的所述环形水道段分隔为至少两个第二分流通道。Preferably, as an implementation manner, a second baffle bar is provided in the outermost ring of the annular water channel section, and the second baffle bar is provided along the extension direction of the annular water channel section. The baffles are configured to divide the outermost annular water channel section into at least two second diverting channels.
优选地,作为一种可实施方式,相邻两圈所述环形水道段的间距为第一间距,最外圈的所述环形水道段与所述后端水道段的间距为第二间距,任意两个所述第一间距的差值的绝对值均大于零,任意一个所述第一间距与所述第二间距的差值的绝对值均大于零。Preferably, as an implementation manner, the spacing between two adjacent rings of the annular water channel segments is a first spacing, and the spacing between the outermost ring of the annular water channel segments and the rear end water channel segment is a second spacing, any The absolute value of the difference between the two first spacings is greater than zero, and the absolute value of the difference between any one of the first spacings and the second spacing is greater than zero.
与现有技术相比,本申请的有益效果在于:Compared with the existing technology, the beneficial effects of this application are:
本申请提供的光刻设备中的硅片承载装置,在承载体的内部开设水道,更加符合光刻设备应用中对空间及精度的要求。The silicon wafer carrier device in the lithography equipment provided by this application has a water channel inside the carrier body, which is more in line with the space and precision requirements in the application of lithography equipment.
需要说明的是,外部冷却液由水道的冷却液入口刚进入前端水道段内时,流速较快,第一隔档条的设置,对流入的冷却液进行阻挡,同时能够加强承载体的前端水道段处的刚度,进而,缓解因水流冲击引起的该处结 构变形的问题,从而,减小硅片的局部面型变化,提高硅片的曝光质量。此外,冷却液入口处的水流较快,将其设置在靠近承载体边缘的部位,不易导致承载体变形,间接地,也会缓解硅片的局部面型变化的问题,便于提高硅片的面型精度,从而,提高硅片的曝光质量。It should be noted that when the external coolant first enters the front-end water channel section from the coolant inlet of the water channel, the flow rate is relatively fast. The setting of the first baffle bar blocks the incoming coolant and at the same time strengthens the front-end water channel of the carrier body. The stiffness of the segment can further alleviate the problem of structural deformation caused by water flow impact, thereby reducing the local surface shape change of the silicon wafer and improving the exposure quality of the silicon wafer. In addition, the water flow at the inlet of the coolant is relatively fast. If it is placed close to the edge of the carrier, it will not easily cause the carrier to deform. Indirectly, it will also alleviate the problem of local surface shape changes of the silicon wafer and facilitate the improvement of the surface area of the silicon wafer. Type accuracy, thereby improving the exposure quality of silicon wafers.
特别地,将冷却液入口设置在靠近承载体的边缘的部位,相对于设置在中间部位而言,对温度场的影响较小;相应地,处于外围的后端水道段的端部冷却液出口,当然也会靠近承载体的边缘,对温度场的影响也较小,从而,承载体的各个部位温度较均衡,可保证硅片下表面温度均衡,进而,置于承载体上的硅片便不易引起局部面型变化。In particular, locating the coolant inlet close to the edge of the carrier body has less impact on the temperature field than locating it in the middle. Correspondingly, the end coolant outlet of the rear end water channel section at the periphery , of course, will also be close to the edge of the carrier, and will have less impact on the temperature field. Therefore, the temperature of each part of the carrier will be more balanced, which can ensure a balanced temperature on the lower surface of the silicon wafer. In turn, the silicon wafer placed on the carrier will be It is not easy to cause local facial changes.
此外,利用前端水道段将从边缘部位的冷却液入口流入的冷却液率先导向承载体的中部,再使其沿中部水道段流向外围的后端水道段,如此,硅片可获得较佳的冷却效果,便于提高硅片的曝光质量。In addition, the front-end water channel section is used to direct the coolant flowing in from the coolant inlet at the edge to the middle of the carrier, and then flows along the middle water channel section to the peripheral rear-end water channel section. In this way, the silicon wafer can be cooled better The effect is to improve the exposure quality of silicon wafers.
附图说明Description of the drawings
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据提供的附图获得其他的附图。In order to explain the embodiments of the present application or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only This is an embodiment of the present application. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without exerting creative efforts.
图1为本申请实施例提供的承载体的水道布局图;Figure 1 is a water channel layout diagram of a carrier provided by an embodiment of the present application;
图2为本申请实施例提供的承载有硅片的承载体的剖视图。FIG. 2 is a cross-sectional view of a carrier carrying silicon wafers provided by an embodiment of the present application.
附图标记说明:Explanation of reference symbols:
100-承载体;110-前端水道段;111-冷却液入口;112-第一隔档条;113-第一分流通道;120-环形水道段;121-第二隔档条;122-第二分流通 道;130-后端水道段;131-冷却液出口;140-第一弧形过渡段;150-第二弧形过渡段;200-硅片。100-carrying body; 110-front water channel section; 111-coolant inlet; 112-first baffle bar; 113-first diversion channel; 120-annular water channel section; 121-second baffle bar; 122-second Split channel; 130-rear end water channel section; 131-coolant outlet; 140-first arc-shaped transition section; 150-second arc-shaped transition section; 200-silicon wafer.
具体实施方式Detailed ways
下面将结合附图对本申请的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.
在本申请的描述中,需要说明的是,术语“上”、“下”、“前”、“后”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。In the description of this application, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "back", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the purpose of To facilitate the description of the present application and to simplify the description, it is not intended to indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present application.
下面通过具体的实施例子并结合附图对本申请做进一步的详细描述。The present application will be described in further detail below through specific implementation examples and in conjunction with the accompanying drawings.
参见图1和图2,本实施例提供了一种光刻设备中的硅片承载装置,其包括承载体100,承载体100的内部开设有水道,水道具有依次连通的前端水道段110、中部水道段和后端水道段130。前端水道段110由靠近承载体100的边缘的部位延伸至承载体100的中部,前端水道段110的靠近承载体100的边缘的一端为冷却液入口111,前端水道段110的另一端与中部水道段的一端连通,中部水道段的另一端与后端水道段130的一端连通,后端水道段130的另一端为冷却液出口131,后端水道段130环绕在中部水道段的外围。前端水道段110内设置有第一隔档条112,第一隔档条112沿前端水道段110的延伸方向设置,第一隔档条112配置成将前端水道段110分隔为至少两个第一分流通道113。Referring to Figures 1 and 2, this embodiment provides a silicon wafer carrying device in a photolithography equipment, which includes a carrying body 100. A water channel is provided inside the carrying body 100, and the water channel has a front-end water channel section 110, a middle section, and a front-end water channel section 110 that are connected in sequence. Channel section and rear channel section 130. The front water channel section 110 extends from a position close to the edge of the carrier 100 to the middle of the carrier 100 . One end of the front water channel section 110 close to the edge of the carrier 100 is the coolant inlet 111 , and the other end of the front water channel section 110 is connected to the middle water channel. One end of the middle water channel section is connected to one end of the rear end water channel section 130 , the other end of the rear end water channel section 130 is the coolant outlet 131 , and the rear end water channel section 130 surrounds the periphery of the middle water channel section. A first baffle bar 112 is disposed in the front-end water channel section 110 . The first baffle bar 112 is disposed along the extension direction of the front-end water channel section 110 . The first baffle bar 112 is configured to separate the front-end water channel section 110 into at least two first baffle bars 112 . Diversion channel 113.
本实施例提供的光刻设备中的硅片承载装置,在承载体100的内部开 设水道,更加符合光刻设备应用中对空间及精度的要求。The silicon wafer carrying device in the lithography equipment provided by this embodiment has a water channel inside the carrying body 100, which is more in line with the space and precision requirements in the application of lithography equipment.
需要说明的是,外部冷却液由水道的冷却液入口111刚进入前端水道段110内时,流速较快,第一隔档条112的设置,对流入的冷却液进行阻挡,同时能够加强承载体100的前端水道段110处的刚度,进而,缓解因水流冲击引起的该处结构变形的问题,从而,减小硅片200的局部面型变化,提高硅片200的曝光质量。此外,冷却液入口111处的水流较快,将其设置在靠近承载体100边缘的部位,不易导致承载体100变形,间接地,也会缓解硅片200的局部面型变化的问题,便于提高硅片200的面型精度,从而,提高硅片200的曝光质量。It should be noted that when the external coolant first enters the front-end water channel section 110 from the coolant inlet 111 of the water channel, the flow rate is relatively fast. The arrangement of the first baffle 112 blocks the incoming coolant and at the same time strengthens the carrier body. The stiffness of the front-end water channel section 110 of the silicon wafer 100 further alleviates the problem of structural deformation caused by water flow impact, thereby reducing the local surface shape change of the silicon wafer 200 and improving the exposure quality of the silicon wafer 200 . In addition, the water flow at the coolant inlet 111 is relatively fast, and it is arranged close to the edge of the carrier 100, which will not easily cause the carrier 100 to deform. Indirectly, it will also alleviate the problem of local surface changes of the silicon wafer 200 and facilitate improvement. The surface shape accuracy of the silicon wafer 200 is improved, thereby improving the exposure quality of the silicon wafer 200 .
特别地,将冷却液入口111设置在靠近承载体100的边缘的部位,相对于设置在中间部位而言,对温度场的影响较小;相应地,处于外围的后端水道段130的端部冷却液出口,当然也会靠近承载体100的边缘,对温度场的影响也较小,从而,承载体100的各个部位温度较均衡,可保证硅片下表面温度均衡,进而,置于承载体100上的硅片200便不易引起局部面型变化。In particular, arranging the coolant inlet 111 close to the edge of the carrier 100 has less impact on the temperature field than arranging it in the middle; accordingly, the end of the rear end water channel section 130 at the periphery Of course, the coolant outlet will be close to the edge of the carrier 100 and will have less influence on the temperature field. Therefore, the temperature of each part of the carrier 100 is relatively balanced, which can ensure a balanced temperature on the lower surface of the silicon wafer. Furthermore, when placed on the carrier The silicon wafer 200 on the silicon wafer 100 is less likely to cause local surface shape changes.
此外,利用前端水道段110将从边缘部位的冷却液入口111流入的冷却液率先导向承载体100的中部,再使其沿中部水道段流向外围的后端水道段130,如此,硅片200可获得较佳的冷却效果,便于提高硅片200的曝光质量。In addition, the front water channel section 110 is used to guide the cooling liquid flowing in from the cooling liquid inlet 111 at the edge to the middle of the carrier 100, and then flows along the middle water channel section to the peripheral rear end water channel section 130. In this way, the silicon wafer 200 can A better cooling effect is obtained, which facilitates improving the exposure quality of the silicon wafer 200 .
具体地,可利用上述第一隔档条112将前端水道段110分隔为横截面积相等的两个第一分流通道113,以进一步优化缓冲效果。Specifically, the first baffles 112 can be used to divide the front water channel section 110 into two first branch channels 113 with equal cross-sectional areas to further optimize the buffering effect.
可选地,可将各个第一分流通道113的横截面积的总和,与中部水道段的横截面积的比值范围设置为0.8-1,不但能够起到较好的缓冲效果,而且还能保证冷却液的流量,以保证合适的冷却效果。Optionally, the ratio range of the sum of the cross-sectional areas of each first branch channel 113 and the cross-sectional area of the middle water channel section can be set to 0.8-1, which can not only achieve a better buffering effect, but also ensure Coolant flow rate to ensure proper cooling effect.
特别地,可将承载体100设置为一体成型结构,一方面,可保证承载 体100的材质单一性,不会因材质不同而引起承载体100的各个部位的膨胀系数及热导率不同,从而,承载体100自身不易发生形变;另一方面,承载体100无拼接,不会因拼接工艺而造成承载体100发生形变,因此,置于承载体100上的硅片200便不易发生面型变化。In particular, the carrier 100 can be configured as a one-piece structure. On the one hand, the single material of the carrier 100 can be ensured, and the expansion coefficients and thermal conductivities of various parts of the carrier 100 will not be different due to different materials. , the carrier 100 itself is not easy to deform; on the other hand, the carrier 100 is not spliced, and the carrier 100 will not be deformed due to the splicing process. Therefore, the silicon wafer 200 placed on the carrier 100 is not easy to change in surface shape. .
本实施例提供的承载体100可选择接近于硅片200的物理特性的材质,如此,便能适应硅片200曝光环境需要的热导率和膨胀系数性能的材质要求,减少因材料本身的物理特性不同引起的对硅片200的变形影响,此外,因选用的材质与硅片200物理特性类似,故不会给硅片200带来离子污染等。The carrier 100 provided in this embodiment can be made of a material close to the physical properties of the silicon wafer 200. In this way, it can adapt to the material requirements of thermal conductivity and expansion coefficient performance required by the exposure environment of the silicon wafer 200, and reduce the physical properties of the material itself. The deformation effect on the silicon wafer 200 caused by different characteristics. In addition, because the selected material has similar physical properties to the silicon wafer 200, it will not bring ion contamination to the silicon wafer 200.
具体地,可利用碳化硅、氧化铝或氮化硅作为承载体100的材质,当然,也可选择其他与硅片200物理特性类似的材质制造承载体100。Specifically, silicon carbide, aluminum oxide or silicon nitride can be used as the material of the carrier 100. Of course, other materials with similar physical properties to the silicon wafer 200 can also be selected to manufacture the carrier 100.
优选地,可将冷却液出口131设置在靠近冷却液入口111的位置,以使得承载体100的各个部位的温度更加均衡,可进一步缓解硅片200的局部面型变化的问题。Preferably, the cooling liquid outlet 131 can be disposed close to the cooling liquid inlet 111 so that the temperature of various parts of the carrier 100 is more balanced, which can further alleviate the problem of local surface shape changes of the silicon wafer 200 .
具体地,可将水道的体积与承载体100的体积的比值范围设置为3%-10%,以保证较佳的硅片曝光质量。Specifically, the ratio range of the volume of the water channel to the volume of the carrier 100 can be set to 3%-10% to ensure better silicon wafer exposure quality.
此外,可将水道的轨迹设置为平滑的曲线,以减小冷却液对水道侧壁的冲击力,缓解因水流冲击水道侧壁而导致承载体100变形的问题,从而,硅片200更不易产生局部面型变化的问题。In addition, the trajectory of the water channel can be set as a smooth curve to reduce the impact of the coolant on the side wall of the water channel, and alleviate the problem of the deformation of the carrier 100 caused by the impact of the water flow on the side wall of the water channel. Therefore, the silicon wafer 200 is less likely to be deformed. The problem of local facial shape changes.
在上述中部水道段的具体结构中可设置若干圈环形水道段120,这些环形水道段120对应的环形均具有开口,即环形水道段120为非闭环的结构,存在两个端部;将最内圈的环形水道段120与前端水道段110连通,将各圈环形水道段120通过两个开口端由内而外依次连通,将最外圈的环形水道段120与后端水道段130连通。In the specific structure of the above-mentioned middle water channel section, several rings of annular water channel sections 120 can be provided. The corresponding rings of these annular water channel sections 120 all have openings, that is, the annular water channel section 120 is a non-closed loop structure with two ends; The annular water channel sections 120 of the circle are connected with the front water channel section 110. The annular water channel sections 120 of each circle are connected in sequence from the inside to the outside through the two open ends, and the outermost ring annular water channel section 120 is connected with the rear water channel section 130.
需要说明的是,将中部水道段的轨迹设置为若干圈依次连通的环形水 道段120,一方面,到达中部水道段的冷却液由内而外一圈圈往复旋转流动,对硅片200的冷却效果较佳;另一方面,环形的设计,尽可能地减小了水道侧壁承载的冷却液冲击力,如此,便于进一步提高硅片200的曝光质量。It should be noted that the trajectory of the central water channel section is set as a number of sequentially connected annular water channel sections 120. On the one hand, the cooling liquid arriving at the central water channel section rotates and flows back and forth from the inside to the outside, cooling the silicon wafer 200. The effect is better; on the other hand, the annular design reduces the impact force of the coolant carried by the side wall of the water channel as much as possible, thus further improving the exposure quality of the silicon wafer 200 .
具体地,可将最内圈的环形水道段120的进液端与前端水道段110的出液端设置为相切,以减小过渡处的转折角度,且尽可能减少转向,进而,减小水流冲击力,缓解因冲击导致的变形问题。Specifically, the liquid inlet end of the innermost annular water channel section 120 and the liquid outlet end of the front end water channel section 110 can be set to be tangential, so as to reduce the turning angle at the transition and reduce steering as much as possible, thereby reducing The impact of water flow alleviates the deformation problem caused by impact.
相应地,可将相邻两圈的环形水道段120的开口端通过第一弧形过渡段140连通;此外,可将最外圈的环形水道段140与后端水道段130通过第二弧形过渡段150连通,还可将后端水道段130的轨迹设置为环形,上述设置,不但可减小过渡处的转折角度,而且可最大程度上减少转向,尽可能减小水流冲击力,同时,使得冷却液的流动更加顺畅。Correspondingly, the open ends of two adjacent rings of annular water channel sections 120 can be connected through the first arc-shaped transition section 140; in addition, the outermost ring of annular water channel sections 140 and the rear end water channel section 130 can be connected through the second arc-shaped transition section 140. The transition section 150 is connected, and the trajectory of the rear end water channel section 130 can also be set to be circular. The above setting can not only reduce the turning angle at the transition, but also reduce the steering to the greatest extent and reduce the impact force of the water flow as much as possible. At the same time, Makes the coolant flow smoother.
可选地,可将第一弧形过渡段140的横截面设置为大于环形水道段120的横截面积,相应地,可将第二弧形过渡段150的横截面积设置为大于环形水道段120的横截面积。Optionally, the cross-sectional area of the first arc-shaped transition section 140 can be set to be larger than the cross-sectional area of the annular water channel section 120. Correspondingly, the cross-sectional area of the second arc-shaped transition section 150 can be set to be larger than the annular water channel section. 120 cross-sectional area.
需要说明的是,水流在流经第一弧形过渡段140和第二弧形过渡段150时,存在转向,流阻较大,增大第一弧形过渡段140和第二弧形过渡段150的横截面积,能够减少流阻,使冷却液流动更加平稳,并在一定程度保证温度的均匀性,进而,保证整个硅片200的面形精度。It should be noted that when the water flow flows through the first arc-shaped transition section 140 and the second arc-shaped transition section 150, there is a turn, and the flow resistance is large, which increases the first arc-shaped transition section 140 and the second arc-shaped transition section. The cross-sectional area of 150 can reduce the flow resistance, make the coolant flow more stable, and ensure the temperature uniformity to a certain extent, thereby ensuring the surface accuracy of the entire silicon wafer 200.
可选地,将前端水道段110、环形水道段120和后端水道段130的供流体通过的横截面积均设置为相等,便于减小水道的侧壁受到的水流冲击,从而,减小承载体100的形变程度,使硅片200不易产生局部面型变化的问题。Optionally, the cross-sectional areas for fluid passage of the front-end water channel section 110, the annular water channel section 120, and the rear-end water channel section 130 are all set to be equal, so as to reduce the impact of water flow on the side walls of the water channel, thereby reducing the load-bearing capacity. The degree of deformation of the body 100 makes it difficult for the silicon wafer 200 to cause local surface shape changes.
可选地,前端水道段110的靠近两端的部位可设置为弧形水道,前端水道段110的中间部位可设置为直线水道,将弧形水道与直线水道平滑过 渡,转向较少,同时,使得冷却液的流动也较更加顺畅。Optionally, the parts near both ends of the front water channel section 110 can be set as an arc water channel, and the middle part of the front end water channel section 110 can be set as a straight water channel, so as to smoothly transition the arc water channel and the straight water channel, with less steering, and at the same time, make The flow of coolant is also smoother.
优选地,在最外圈的环形水道段120内可设置第二隔档条121,并使该第二隔档条121沿环形水道段120的延伸方向设置,利用该第二隔档条121将最外圈的环形水道段120分隔为至少两个第二分流通道122。Preferably, a second baffle bar 121 can be disposed in the outermost annular water channel section 120, and the second baffle bar 121 is disposed along the extension direction of the annular water channel section 120, and the second baffle bar 121 is used to The outermost annular water channel section 120 is divided into at least two second branch channels 122 .
需要说明的是,第二隔档条121的设置,可减小承载体100的温差梯度,提高硅片200的曝光质量。It should be noted that the arrangement of the second spacer bars 121 can reduce the temperature gradient of the carrier 100 and improve the exposure quality of the silicon wafer 200 .
将相邻两圈环形水道段120的间距定义为第一间距,将最外圈的环形水道段120与后端水道段130的间距定义为第二间距,使任意两个第一间距的差值的绝对值均设置为大于零,即任一第一间距的大小均不同;同时,使任意一个第一间距与第二间距的差值的绝对值均设置为大于零,即任一第一间距的大小均与第二间距不同,如此,置于承载体100上的硅片200可获得更佳的曝光效果。The distance between two adjacent rings of annular water channel segments 120 is defined as the first spacing, and the spacing between the outermost ring of annular water channel segments 120 and the rear end water channel segment 130 is defined as the second spacing. The difference between any two first spacings is The absolute value of is set to be greater than zero, that is, the size of any first spacing is different; at the same time, the absolute value of the difference between any first spacing and the second spacing is set to be greater than zero, that is, the size of any first spacing is The sizes are different from the second spacing. In this way, the silicon wafer 200 placed on the carrier 100 can obtain a better exposure effect.
优选地,可将冷却液出口131设置在靠近冷却液入口111的位置,以使得承载体100的各个部位的温度更加均衡,可进一步缓解硅片200的局部面型变化的问题。Preferably, the cooling liquid outlet 131 can be disposed close to the cooling liquid inlet 111 so that the temperature of various parts of the carrier 100 is more balanced, which can further alleviate the problem of local surface shape changes of the silicon wafer 200 .
具体地,可将水道的体积与承载体100的体积的比值范围设置为3%-10%,以保证较佳的硅片曝光质量。Specifically, the ratio range of the volume of the water channel to the volume of the carrier 100 can be set to 3%-10% to ensure better silicon wafer exposure quality.
在承载体下方设置带有温度传感器、加热丝片等控制板,能实现硅片曝光环境控制在22℃±0.1℃,温度稳定性≤35mK/25s,对硅片的面型变形量小于7.2nm,以便达到有利于硅片曝光工作最优配置。A control board with a temperature sensor, heating wire, etc. is installed under the carrier, which can control the silicon wafer exposure environment at 22℃±0.1℃, with temperature stability ≤35mK/25s, and surface deformation of the silicon wafer less than 7.2nm. , in order to achieve the optimal configuration that is beneficial to the silicon wafer exposure work.
最后应说明的是:以上各实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述各实施例对本申请进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本申请各实施例技术方案的范 围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present application, but not to limit it; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: The technical solutions described in the foregoing embodiments can still be modified, or some or all of the technical features can be equivalently replaced; and these modifications or substitutions do not deviate from the essence of the corresponding technical solutions from the technical solutions of the embodiments of the present application. scope.
工业实用性Industrial applicability
本实施例提供的光刻设备中的硅片承载装置,不易变形,且温度均衡,能够提高硅片的面型精度,从而,提高硅片的曝光质量。The silicon wafer carrying device in the photolithography equipment provided in this embodiment is not easily deformed and has a balanced temperature, which can improve the surface accuracy of the silicon wafer, thereby improving the exposure quality of the silicon wafer.

Claims (18)

  1. 一种光刻设备中的硅片承载装置,其特征在于,包括承载体(100),所述承载体(100)的内部开设有水道,所述水道具有依次连通的前端水道段(110)、中部水道段和后端水道段(130);A silicon wafer carrying device in photolithography equipment, characterized by comprising a carrying body (100), a water channel is provided inside the carrying body (100), and the water channel has front-end water channel sections (110) that are connected in sequence, The middle channel section and the rear channel section (130);
    所述前端水道段(110)由靠近所述承载体(100)的边缘的部位延伸至所述承载体(100)的中部,所述前端水道段(110)的靠近所述承载体(100)的边缘的一端为冷却液入口(111),所述前端水道段(110)的另一端与所述中部水道段的一端连通,所述中部水道段的另一端与所述后端水道段(130)的一端连通,所述后端水道段(130)的另一端为冷却液出口(131),所述后端水道段(130)环绕在所述中部水道段的外围;The front water channel section (110) extends from a position close to the edge of the carrier body (100) to the middle of the carrier body (100). One end of the edge is the coolant inlet (111), the other end of the front end water channel section (110) is connected with one end of the middle water channel section, and the other end of the middle water channel section is connected with the rear end water channel section (130 ) is connected to one end of the rear end water channel section (130), and the other end of the rear end water channel section (130) is the coolant outlet (131), and the rear end water channel section (130) surrounds the periphery of the middle water channel section;
    所述前端水道段(110)内设置有第一隔档条(112),所述第一隔档条(112)沿所述前端水道段(110)的延伸方向设置,所述第一隔档条(112)配置成将所述前端水道段(110)分隔为至少两个第一分流通道(113)。A first barrier bar (112) is provided in the front-end water channel section (110), and the first barrier bar (112) is provided along the extension direction of the front-end water channel section (110). The first barrier bar (112) The strip (112) is configured to divide the front water channel section (110) into at least two first diversion channels (113).
  2. 根据权利要求1所述的光刻设备中的硅片承载装置,其特征在于,所述第一隔档条(112)配置成将所述前端水道段(110)分隔为横截面积相等的两个所述第一分流通道(113)。The silicon wafer carrying device in the lithography equipment according to claim 1, wherein the first baffle bar (112) is configured to separate the front-end water channel section (110) into two sections with equal cross-sectional areas. said first shunt channel (113).
  3. 根据权利要求1或2所述的光刻设备中的硅片承载装置,其特征在于,各个所述第一分流通道(113)的横截面积的总和,与所述中部水道段的横截面积的比值范围为0.8-1。The silicon wafer carrying device in the photolithography equipment according to claim 1 or 2, characterized in that the sum of the cross-sectional areas of each of the first branch channels (113) is equal to the cross-sectional area of the middle water channel section. The ratio range is 0.8-1.
  4. 根据权利要求1-3任一项所述的光刻设备中的硅片承载装置,其特征在于,所述承载体(100)为一体成型结构。The silicon wafer carrying device in the photolithography equipment according to any one of claims 1 to 3, characterized in that the carrying body (100) is an integrally formed structure.
  5. 根据权利要求1-4任一项所述的光刻设备中的硅片承载装置,其特征在于,所述承载体(100)的材质为碳化硅、氧化铝或氮化硅。The silicon wafer carrying device in the photolithography equipment according to any one of claims 1 to 4, characterized in that the material of the carrying body (100) is silicon carbide, aluminum oxide or silicon nitride.
  6. 根据权利要求1-5任一项所述的光刻设备中的硅片承载装置,其特 征在于,所述冷却液出口(131)靠近所述冷却液入口(111)设置;The silicon wafer carrying device in the lithography equipment according to any one of claims 1 to 5, characterized in that the cooling liquid outlet (131) is located close to the cooling liquid inlet (111);
  7. 根据权利要求1-6任一项所述的光刻设备中的硅片承载装置,其特征在于,所述水道的体积与所述承载体(100)的体积的比值范围为3%-10%。The silicon wafer carrying device in the photolithography equipment according to any one of claims 1 to 6, characterized in that the ratio of the volume of the water channel to the volume of the carrying body (100) ranges from 3% to 10%. .
  8. 根据权利要求1-7任一项所述的光刻设备中的硅片承载装置,其特征在于,所述中部水道段包括若干圈环形水道段(120),所述环形水道段(120)对应的环形均具有开口,形成两个端部;最内圈的所述环形水道段(120)与所述前端水道段(110)连通,各圈所述环形水道段(120)通过两个开口端由内而外依次连通,最外圈的所述环形水道段(120)与所述后端水道段(130)连通。The silicon wafer carrying device in the photolithography equipment according to any one of claims 1 to 7, characterized in that the middle water channel section includes a plurality of annular water channel sections (120), and the annular water channel section (120) corresponds to The annular shapes have openings, forming two ends; the annular water channel section (120) of the innermost ring is connected with the front water channel section (110), and the annular water channel section (120) of each ring passes through the two open ends. They are connected in sequence from the inside out, and the outermost annular water channel section (120) is connected with the rear end water channel section (130).
  9. 根据权利要求8所述的光刻设备中的硅片承载装置,其特征在于,所述前端水道段(110)的靠近两端的部位为弧形水道,中间部位为直线水道,所述弧形水道与所述直线水道平滑过渡。The silicon wafer carrying device in the photolithography equipment according to claim 8, characterized in that the parts near both ends of the front-end water channel section (110) are arc-shaped water channels, and the middle part is a straight water channel, and the arc-shaped water channel Smooth transition with the straight water channel.
  10. 根据权利要求8或9所述的光刻设备中的硅片承载装置,其特征在于,最内圈的所述环形水道段(120)的进液端与所述前端水道段(110)的出液端相切。The silicon wafer carrying device in the photolithography equipment according to claim 8 or 9, characterized in that the liquid inlet end of the innermost annular water channel section (120) and the outlet of the front end water channel section (110) Liquid ends are tangent.
  11. 根据权利要求8-10任一项所述的光刻设备中的硅片承载装置,其特征在于,相邻两圈所述环形水道段(120)的开口端通过第一弧形过渡段(140)连通。The silicon wafer carrying device in the lithography equipment according to any one of claims 8 to 10, characterized in that the open ends of two adjacent rings of the annular water channel sections (120) pass through the first arc-shaped transition section (140) ) connected.
  12. 根据权利要求8-11任一项所述的光刻设备中的硅片承载装置,其特征在于,最外圈的所述环形水道段(120)与所述后端水道段(130)通过第二弧形过渡段(150)连通。The silicon wafer carrying device in the photolithography equipment according to any one of claims 8 to 11, characterized in that the outermost annular water channel section (120) and the rear end water channel section (130) pass through the third The two arc-shaped transition sections (150) are connected.
  13. 根据权利要求8-12任一项所述的光刻设备中的硅片承载装置,其特征在于,所述后端水道段(130)的轨迹为环形。The silicon wafer carrying device in the lithography equipment according to any one of claims 8 to 12, characterized in that the trajectory of the rear end water channel section (130) is annular.
  14. 根据权利要求11所述的光刻设备中的硅片承载装置,其特征在 于,所述第一弧形过渡段(140)的横截面积大于所述环形水道段(120)的横截面积。The silicon wafer carrying device in the lithography equipment according to claim 11, characterized in that the cross-sectional area of the first arc-shaped transition section (140) is larger than the cross-sectional area of the annular water channel section (120).
  15. 根据权利要求12所述的光刻设备中的硅片承载装置,其特征在于,所述第二弧形过渡段(150)的横截面积大于所述环形水道段(120)的横截面积。The silicon wafer carrying device in the lithography equipment according to claim 12, characterized in that the cross-sectional area of the second arc-shaped transition section (150) is larger than the cross-sectional area of the annular water channel section (120).
  16. 根据权利要求8-15任一项所述的光刻设备中的硅片承载装置,其特征在于,所述前端水道段(110)、所述环形水道段(120)和所述后端水道段(130)的供流体通过的横截面积均相等。The silicon wafer carrying device in the lithography equipment according to any one of claims 8-15, characterized in that the front-end water channel section (110), the annular water channel section (120) and the rear-end water channel section The cross-sectional areas of (130) for fluid to pass through are all equal.
  17. 根据权利要求8-16任一项所述的光刻设备中的硅片承载装置,其特征在于,最外圈的所述环形水道段(120)内设置有第二隔档条(121),所述第二隔档条(121)沿所述环形水道段(120)的延伸方向设置,所述第二隔档条(121)配置成将最外圈的所述环形水道段(120)分隔为至少两个第二分流通道(122)。The silicon wafer carrying device in the lithography equipment according to any one of claims 8 to 16, characterized in that a second barrier bar (121) is provided in the outermost annular water channel section (120), The second baffle bar (121) is arranged along the extension direction of the annular water channel section (120), and the second baffle bar (121) is configured to separate the outermost ring of the annular water channel section (120). It is at least two second branch channels (122).
  18. 根据权利要求8-17任一项所述的光刻设备中的硅片承载装置,其特征在于,相邻两圈所述环形水道段(120)的间距为第一间距,最外圈的所述环形水道段(120)与所述后端水道段(130)的间距为第二间距,任意两个所述第一间距的差值的绝对值均大于零,任意一个所述第一间距与所述第二间距的差值的绝对值均大于零。The silicon wafer carrying device in the photolithography equipment according to any one of claims 8 to 17, characterized in that the spacing between two adjacent rings of the annular water channel sections (120) is a first spacing, and all the distances in the outermost ring are The distance between the annular water channel section (120) and the rear end water channel section (130) is a second distance. The absolute value of the difference between any two first distances is greater than zero. The difference between any one of the first distances and The absolute values of the differences between the second intervals are all greater than zero.
PCT/CN2022/114996 2022-05-11 2022-08-26 Silicon wafer bearing device in photoetching device WO2023216463A1 (en)

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