KR20100011924A - Film forming apparatus and film forming method - Google Patents

Abstract

PURPOSE: A device and a method for forming a film are provided to cool down a rectification plate using a penetration hole of the rectification plate. CONSTITUTION: A rectification plate is installed to an upper side of a reactive gas flowing direction on a silicon wafer(101). The rectification plate includes a first penetration hole(104a) and a second penetration hole(104b) installed on a position where the first penetration hole does not cross. The reactive gas flows to the silicon wafer by passing through the first penetration hole. The temperature rise of the rectification is suppressed by passing the cooling gas through the second penetration hole.

Description

FILM FORMING APPARATUS AND FILM FORMING METHOD}

The present invention relates to a film forming apparatus and a film forming method.

In many cases, a sheet type film forming apparatus is used to manufacture an epitaxial wafer in which a single crystal film such as silicon is grown on a wafer.

The general sheet type film-forming apparatus is equipped with a chamber, a gas supply means, a wafer heating means, etc. A susceptor holding a wafer is provided in the chamber, and the susceptor is rotatable by a motor. In such a film forming apparatus, the wafer is heated by wafer heating means provided below and above the susceptor while rotating while being mounted on the susceptor. Then, the reaction gas is supplied through the gas supply means to form an epitaxial film on the wafer.

In order to form an epitaxial film with uniform electrical characteristics and the like over the entire surface of the wafer, it is necessary to make the flow of gas in the chamber uniform. For this reason, the rectification plate which consists of quartz is provided in the upper part of a chamber, and the reaction gas supplied by the gas supply means is supplied uniformly on a wafer.

However, in the case of forming a thick epitaxial film, the processing time increases, and thus the temperature of the rectifying plate increases due to the copy heat, and there is a problem that a film is formed on the surface of the rectifying plate. When this film is peeled off, it becomes a foreign matter and lowers the yield of the epitaxial wafer. In addition, when the temperature of a wafer is measured by the radiation thermometer provided above the chamber, the measurement is inhibited by the film formed on the surface of the rectifying plate.

Japanese Laid-Open Patent Publication No. 2008-1923 discloses a film forming apparatus provided with a cooling device for cooling a rectifying plate. This cooling device is composed of a disk-shaped base and a plurality of cooling fins standing up on the upper surface of the base. And cooling gas flows through the surface of the base along the cooling fin, and they are cooled.

In this document, a cooling device is provided on a member constituting the rectifying plate, and the cooling device is cooled, so that adjacent rectifying plates are cooled. That is, since the rectifying plate is indirectly cooled from one side, there is a problem that it takes time for the whole of the rectifying plate to cool. For this reason, when the temperature rise of a rectifying plate is remarkable, there exists a possibility that a rectifying plate may not be cooled enough and the formation of a film cannot be suppressed.

For example, in the case of forming the film by shortening the distance from the wafer to the rectifying plate in order to increase the reaction efficiency on the wafer surface, the temperature rise of the rectifying plate becomes larger on the side facing the wafer. However, in this document, since the cooling device is mounted on the side opposite to the side of the rectifying plate facing the wafer, there is a possibility that the temperature rise of the rectifying plate cannot be sufficiently suppressed. On the other hand, even when the cooling device is mounted on the side of the rectifying plate opposite to the wafer, the same problem occurs in the system in which the wafer heating means is provided on the upper part of the chamber. That is, in this system, since the rectifying plate is arranged between the wafer heating means and the wafer, the temperature rise of the rectifying plate is increased on the opposite side to the side facing the wafer. Therefore, there exists a possibility that the temperature rise of a rectifying plate cannot fully be suppressed similarly to the above.

Further, in the above document, the cooling device is composed of aluminum. For this reason, when measuring the temperature of a wafer by the radiation thermometer provided above the chamber, it was necessary to study the arrangement | positioning of a cooling apparatus so that it may not interfere with a measurement.

Moreover, in this film-forming apparatus, cooling gas flows along the surface of the base along the cooling fin. For this reason, the structure of a cooling device also became complicated.

This invention is made | formed in view of such a problem. That is, an object of the present invention is to provide a film forming apparatus which is easy to measure the temperature of a wafer and can sufficiently suppress the temperature rise of the rectifying plate.

Moreover, the objective of this invention is providing the film-forming apparatus which can suppress the temperature rise of a rectifying plate with a simple structure.

Moreover, the objective of this invention is providing the film-forming method which can fully suppress the temperature rise of a rectifying plate.

The present invention provides a rectifying plate in a film forming apparatus which supplies a reaction gas into the film formation chamber and heats the substrate placed in the film formation chamber to form a film on the surface of the substrate. . Cooling gas passes through the inside of the rectifying plate.

Another aspect of the present invention provides a film forming apparatus for supplying a reaction gas into a film formation chamber, and heating a substrate placed in the film formation chamber to form a film on the surface of the substrate. It is provided in the side, and is provided with two flat plates and a connection pipe. The two flat plates have through holes and are provided at predetermined intervals from each other. The connecting pipe connects the through hole. The reaction gas flows through the interior of the connecting tube and flows down toward the substrate. Cooling gas passes between two plates.

Another aspect of the present invention provides a film forming apparatus for supplying a reaction gas into a film formation chamber, and heating a substrate provided on the film formation chamber to form a film on the surface of the substrate, wherein the rectifying plate is upstream of the direction in which the reaction gas flows with respect to the substrate. It is provided in the side, and the 1st part provided with the some through-hole, and the hollow 2nd part provided along the circumference | surroundings of a 1st part are provided. The reaction gas flows through the through hole and flows down to the substrate. Cooling gas passes through the second portion.

According to another aspect of the present invention, in a film formation method of supplying a reaction gas into a film formation chamber, and heating a substrate provided on the film formation chamber to form a film on the surface of the substrate, rectification is performed upstream of the direction in which the reaction gas flows with respect to the substrate. Install the plate. The rectifying plate has a through hole. The reaction gas flows down to the substrate through a through hole provided in the rectifying plate while allowing the cooling gas to flow inside the rectifying plate.

Other objects and advantages of the present invention will become apparent from the following description.

According to the present invention, it is possible to provide a film forming apparatus and a method which can easily measure the temperature of the wafer and can sufficiently suppress the temperature rise of the rectifying plate.

(Form to carry out invention)

Embodiment 1.

BRIEF DESCRIPTION OF THE DRAWINGS It is typical sectional drawing of the sheet type film-forming apparatus of this embodiment. In this embodiment, the silicon wafer 101 is used as the substrate. However, the present invention is not limited thereto, and a wafer made of another material may be used in some cases.

The film forming apparatus 100 includes a chamber 102 as a film forming chamber.

The upper part of the chamber 102 is connected with a reaction gas supply path (first flow path) 103 for supplying a reaction gas for forming a crystal film on the surface of the heated silicon wafer 101. In this embodiment, trichlorosilane can be used as a reaction gas, and is introduce | transduced into the chamber 102 from the reaction gas supply path 103 in the state mixed with hydrogen gas as a carrier gas.

The rectifying plate 104 is provided on the upstream side in the direction (arrow direction) in which the reaction gas flows with respect to the silicon wafer 101. The first rectifying plate 104 is provided with a plurality of first through holes 104a, and the reaction gas supplied from the reaction gas supply path 103 flows through the first through holes 104a and flows down to the silicon wafer 101. .

Moreover, the 2nd through hole 104b is provided in the rectifying plate 104, and hydrogen gas as a cooling gas passes through the 2nd through hole 104b. As described above, the feature of the present embodiment lies in that the cooling gas passes through the inside of the rectifying plate 104.

2 is a plan view of the rectifying plate. 3 is a partial cross-sectional view of the rectifying plate cut along the line AA ′ of FIG. 2. 4 is a perspective view of a cross section of the rectifying plate of FIG. 2 cut in a direction parallel to the ground. As shown in these figures, the rectifying plate 104 is provided at a position which does not intersect the first through hole 104a and the first through hole 104a provided downstream from the flow direction upstream of the reaction gas. A second through hole 104b is provided. The reaction gas supplied from the reaction gas supply path 103 flows toward the silicon wafer 101 through the first through hole 104a. On the other hand, cooling gas passes through the second through hole 104b.

The cooling gas is supplied from the cooling gas supply path (second flow path) 105 of FIG. 1, and is discharged through the second through hole 104b to the first exhaust pipe (third flow path) 106. As the cooling gas, for example, hydrogen, nitrogen, argon or the like can be used, but from the point of cooling efficiency, it is preferable to use hydrogen.

The rectifying plate 104 can be cooled directly by making the inside of the rectifying plate 104 pass the reaction gas. Therefore, the rectifying plate 104 can be cooled in a short time. In addition, since the rectifying plate 104 is cooled from the inside, the heating source can be efficiently cooled on either side of the rectifying plate.

For example, in FIG. 1, the 1st heating means (in heater 120 and out heater 121) which heats the silicon wafer 101 from the inner surface in the chamber 102 is provided. Further, outside the chamber 102, second heating means 107 is provided for heating the silicon wafer 101 from the surface. These heating means promote reaction on the surface of the silicon wafer 101, but by providing them, the temperature of the rectifying plate 104 also increases. However, according to this embodiment, since the cooling gas is permeated through the inside of the rectifying plate 104 to cool the rectifying plate 104 directly from the inside, it is possible to sufficiently suppress the temperature rise of the rectifying plate 104.

The introduction of the cooling gas into the rectifying plate 104 can be performed simultaneously with the introduction of the reaction gas. However, the cooling gas can also be introduced when the rectifying plate 104 reaches a predetermined temperature or more. In the latter case, since the temperature rise of the rectifying plate 104 is considered to be caused by the temperature rise of the silicon wafer 101, a cooling gas may be introduced when the silicon wafer 101 becomes above a predetermined temperature.

The supply of the cooling gas can be terminated at the end of the supply of the reaction gas, but may be terminated when the rectifying plate 104 (or the silicon wafer 101) becomes lower than a predetermined temperature.

The cooling gas causes the gas at room temperature to flow at an appropriate flow rate. Too low flow rate results in poor cooling efficiency, while too high a flow rate impedes the exhaust of the reaction gas or wastes the cooling gas and causes an increase in cost.

The flow rate of the cooling gas can always be constant, but can also be changed depending on the temperature of the rectifying plate 104 (or the silicon wafer 101). That is, when the temperature of the rectifying plate 104 (or the silicon wafer 101) is equal to or higher than the predetermined temperature, the flow rate of the cooling gas can be increased, and when lower than the predetermined temperature, the flow rate of the cooling gas can be reduced. In order to save the usage amount of cooling gas, it is preferable to change a flow volume according to temperature.

In FIG. 1, a second exhaust pipe (fourth flow path) 108 is provided below the chamber 102. The second exhaust pipe 108 is connected to a vacuum pump (not shown) and exhausts the reaction gas after the reaction in the chamber 102. In addition, the cooling gas discharged from the rectifying plate 104 to the first exhaust pipe 106 is also exhausted through the second exhaust pipe 108. That is, the cooling gas in the first exhaust pipe 106 enters the inside of the chamber 102 through the opening 109, and then is quickly discharged from the second exhaust pipe 108 to the outside of the film forming apparatus 100. If the flow rate of the cooling gas is too high, the flow of the reaction gas may change, and exhaust may be disturbed. Therefore, the flow rate of the cooling gas is such that it has a cooling effect and does not interfere with the exhaust of the reaction gas.

Inside the chamber 102, a susceptor 110 on which the silicon wafer 101 is mounted is provided on the rotating part 111. The rotating part 111 is equipped with the cylindrical part 111a and the rotating shaft 111b. When the rotating shaft 111b rotates through a motor (not shown), the cylindrical portion 111a rotates, and the susceptor 110 provided on the cylindrical portion 111a also rotates.

The cylindrical part 111a is provided with the in heater 120 and the out heater 121 which heat the silicon wafer 101 from the back surface. The surface temperature of the silicon wafer 101 which changes by heating is measured by the radiation thermometer 122 installed on the top of the chamber 102. For this reason, the chamber 102 and the rectifying plate 104 are preferably made of quartz. Thereby, the temperature measurement by the radiation thermometer 122 can be prevented from being disturbed by the chamber 102 and the rectifying plate 104. The measured temperature data is sent to the control device 112. The control apparatus 112 controls the operation | movement of the valves 113a and 113b provided in the flow path of hydrogen gas. That is, when the silicon wafer 101 is at or above a predetermined temperature, the control device 112 moves the valve 113a so that the hydrogen gas flows not only into the reaction gas supply path 103 but also into the cooling gas supply path 105. do. In addition, although abbreviate | omitted in FIG. 1, the control apparatus 112 also controls the output of the in heater 120 and the out heater 121. FIG.

Then, the film-forming method of this invention is demonstrated.

The formation of the silicon epitaxial film on the silicon wafer 101 is performed as follows.

First, the silicon wafer 101 is loaded into the chamber 102. Subsequently, the silicon wafer 101 is mounted on the susceptor 110, and the silicon wafer 101 is rotated by about 50 rpm according to the rotating part 111.

Subsequently, the in-heater 120, the out-heater 121, and the second heating means 107, which are the first heating means, are operated to heat the silicon wafer 101. In addition, you may heat only in either one of the 1st heating means and the 2nd heating means 107. FIG. For example, it heats gradually to 1150 degreeC which is film-forming temperature. After confirming that the temperature of the silicon wafer 101 reaches 1150 degreeC by the measurement by the radiation thermometer 122, the rotation speed of the silicon wafer 101 is gradually raised. Then, the reaction gas flows down the silicon wafer 101 from the reaction gas supply path 103 through the rectifying plate 104.

After the measurement by the radiation thermometer 122 is continued, and after confirming that the temperature of the silicon wafer 101 has reached a predetermined temperature, the control device 112 moves the valve 113a to allow hydrogen gas to flow into the reaction gas supply. Not only the 103 but also the cooling gas supply passage 105 flows. As a result, since the cooling gas passes through the inside of the rectifying plate 104, the temperature rise of the rectifying plate 104 can be suppressed to prevent the film from being formed on the rectifying plate 104. In addition, the introduction of the cooling gas into the rectifying plate 104 may be performed simultaneously with the introduction of the reaction gas. In addition, although the flow volume of cooling gas can be made constant always, it can also change with the temperature of the silicon wafer 101. As shown in FIG.

After the epitaxial film of a predetermined film thickness is formed on the silicon wafer 101, the supply of the reaction gas is terminated. The supply of the cooling gas can also be terminated at the end of supply of the reaction gas, but may be terminated after confirming that the silicon wafer 101 is lower than the predetermined temperature by the measurement by the radiation temperature 122. Thereafter, after confirming that the silicon wafer 101 is cooled to a predetermined temperature, the silicon wafer 101 is carried out to the outside of the chamber 102.

As described above, according to the present embodiment, since the inside of the rectifying plate has a structure through which cooling water passes, the entire rectifying plate can be cooled efficiently, and the temperature rise of the rectifying plate can be suppressed regardless of the position of the heating means. have. In addition, the rectifying plate may be made of quartz so that the measurement by the radiation thermometer may not be disturbed.

Embodiment 2.

5 is a perspective view of the rectifying plate of the present embodiment. In addition, the structure of film-forming apparatuses other than a rectifying plate can be made the same as FIG. 1 demonstrated in Embodiment 1. As shown in FIG.

The rectifying plate of this embodiment is provided in the upstream of the direction (arrow direction) in which reaction gas flows with respect to the silicon wafer 101 in FIG.

As shown in FIG. 5, the rectifying plate 204 connects two flat plates 214 and 215 provided at predetermined intervals, and a connection pipe 218 connecting through holes 216 and 217 respectively provided in these flat plates. ). In FIG. 1, the reaction gas supplied from the reaction gas supply path 103 enters the interior of the chamber 102, passes through the connection pipe 218 from the through hole 216, and exits from the through hole 217. Descend to (101).

On the other hand, the cooling gas supplied from the cooling gas supply pipe 105 of FIG. 1 passes between two flat plates 214 and 215 and is discharged to the first exhaust pipe 106. According to this structure, since the two plates 214 and 215 are filled with a cooling gas, the whole rectifying plate 204 is cooled efficiently. In particular, since the circumference | surroundings of the connection pipe 218 which is a flow path of reaction gas are cooled, the effect which suppresses the temperature rise of a reaction gas is high. In addition, similarly to Embodiment 1, the heating source can be efficiently cooled on either side of the rectifying plate 204.

The reaction gas flowing down through the rectifying plate 204 reacts on the silicon wafer 101. As a result, a silicon epitaxial film is formed on the silicon wafer 101. Thereafter, the gas after the reaction or the unreacted reaction gas is discharged from the second exhaust pipe 108 provided under the chamber 102 to the outside of the film forming apparatus 100. On the other hand, the cooling gas cooling the rectifying plate 204 is discharged to the first exhaust pipe 106, and then enters the interior of the chamber 102 through the opening 109, and is quickly discharged from the second exhaust pipe 108.

The introduction of the cooling gas into the rectifying plate 204 can be performed at the same time as the introduction of the reaction gas. However, the cooling gas can also be introduced when the rectifying plate 204 becomes above a predetermined temperature. In the latter case, since the temperature rise of the rectifying plate 204 is considered to be caused by the temperature rise of the silicon wafer 101, a cooling gas may be introduced when the silicon wafer 101 becomes above a predetermined temperature.

In addition, although supply of cooling gas can be complete | finished with completion | finish of supply of reaction gas, you may end when the rectifying plate 204 (or silicon wafer 101) becomes lower than predetermined temperature.

The cooling gas flows the gas at room temperature at an appropriate flow rate. Too low flow rate results in poor cooling efficiency, while too high a flow rate impedes the exhaust of the reaction gas or wastes the cooling gas and causes an increase in cost.

The flow rate of the cooling gas can always be constant, but can also be changed depending on the temperature of the rectifying plate 204 (or the silicon wafer 101). That is, when the temperature of the rectifying plate 204 (or the silicon wafer 101) is equal to or higher than the predetermined temperature, the flow rate of the cooling gas can be increased, and when lower than the predetermined temperature, the flow rate of the cooling gas can be reduced. In order to save the usage amount of cooling gas, it is preferable to change a flow volume according to temperature.

By constructing the rectifying plate 204 from quartz, the surface temperature of the silicon wafer 101 can be measured by the radiation thermometer 122 provided on the upper portion of the chamber 102.

As described above, according to the present embodiment, rectification is provided with two flat plates provided at predetermined intervals upstream in the direction in which the reaction gas flows with respect to the silicon wafer, and connecting tubes connecting the through holes provided in the flat plates, respectively. Since the plate was provided, the reaction gas flowed down the silicon wafer toward the silicon wafer, and the cooling gas passed between the two plates, so that the entire rectifying plate could be cooled efficiently. Regardless of the position, the temperature rise of the rectifying plate can be suppressed. In addition, the rectifying plate may be made of quartz so that the measurement by the radiation thermometer may not be disturbed.

Embodiment 3.

6 is a cross-sectional perspective view of the rectifying plate of this embodiment. In addition, the structure of film-forming apparatuses other than a rectifying plate can be made to be the same as that of FIG.

The rectifying plate of this embodiment is provided in the upstream of the direction (arrow direction) in which reaction gas flows with respect to the silicon wafer 101 in FIG.

As shown in FIG. 6, the rectifying plate 304 has a first portion 315 provided with a plurality of through holes 314, and a hollow second portion 316 provided around the first portion 315. . In FIG. 1, the reaction gas supplied from the reaction gas supply path 103 enters the inside of the chamber 102, and then flows down through the through hole 314 toward the silicon wafer 101.

On the other hand, the cooling gas supplied from the cooling gas supply pipe 105 of FIG. 1 enters into the second portion 316 from the connecting portion 317, flows along the circumference of the first portion, and then, from the connecting portion 318, the first exhaust pipe ( To 106). This structure is simple by providing a cooling gas flow passage around the flow path of the reaction gas, but the heating source can be efficiently cooled on either side of the rectifying plate 304.

The reaction gas flowing down through the rectifying plate 304 reacts on the silicon wafer 101. As a result, a silicon epitaxial film is formed on the silicon wafer 101. Thereafter, the gas after the reaction or the unreacted reaction gas is discharged from the second exhaust pipe 108 provided under the chamber 102 to the outside of the film forming apparatus 100. On the other hand, the cooling gas which cooled the rectifying plate 304 is discharged from the connection part 318 to the 1st exhaust pipe 106, passes through the opening part 109, and enters inside the chamber 102, and quickly becomes the 2nd exhaust pipe ( 108).

The introduction of the cooling gas into the rectifying plate 304 can be performed at the same time as the introduction of the reaction gas. However, the cooling gas may be introduced when the rectifying plate 304 becomes above a predetermined temperature. In the latter case, since the temperature rise of the rectifying plate 304 is considered to be caused by the temperature rise of the silicon wafer 101, a cooling gas may be introduced when the silicon wafer 101 becomes above a predetermined temperature.

In addition, although supply of cooling gas can be complete | finished with completion | finish of supply of reaction gas, you may end when the rectifying plate 304 (or the silicon wafer 101) becomes lower than predetermined temperature.

The cooling gas causes the gas at room temperature to flow at an appropriate flow rate. Too low flow rate results in poor cooling efficiency, while too high a flow rate impedes the exhaust of the reaction gas or wastes the cooling gas and causes an increase in cost.

The flow rate of the cooling gas can always be constant, but can also be changed depending on the temperature of the rectifying plate 304 (or the silicon wafer 101). That is, when the temperature of the rectifying plate 304 (or the silicon wafer 101) is equal to or higher than the predetermined temperature, the flow rate of the cooling gas can be increased, and when lower than the predetermined temperature, the flow rate of the cooling gas can be reduced. In order to save the usage amount of cooling gas, it is preferable to change a flow volume according to temperature.

By configuring the rectifying plate 304 in quartz, the surface temperature of the silicon wafer 101 can be measured by the radiation thermometer 122 provided on the upper portion of the chamber 102.

As described above, according to the present embodiment, a first portion provided with a plurality of through holes is provided upstream of the direction in which the reaction gas flows with respect to the silicon wafer, and a hollow second portion provided along the circumference of the first portion. Since the rectifying plate was provided, the reaction gas flowed down the silicon wafer through the through hole, and the cooling gas passed through the second portion, the temperature rise of the rectifying plate can be suppressed with a simple structure.

In addition, this invention is not limited to each said embodiment, It can variously deform and implement within the range which does not deviate from the meaning of this invention. For example, although the epitaxial growth apparatus was mentioned as an example of the film-forming apparatus in Embodiment 1-3, it is not limited to this. Another film forming apparatus may be used as long as it is a film forming apparatus which supplies a reaction gas into the film forming chamber, heats the substrate placed in the film forming chamber, and forms a film on the surface of the substrate.

The features and advantages of the present invention are summarized as follows.

According to the 1st aspect of this invention, the film-forming apparatus which is easy to measure the temperature of a wafer and can fully suppress the temperature rise of a rectifying plate is provided.

According to the 2nd aspect of this invention, the film-forming apparatus which is easy to measure the temperature of a wafer and can fully suppress the temperature rise of a rectifying plate is provided.

According to the 3rd aspect of this invention, the film-forming apparatus which can suppress the temperature rise of a rectifying plate with a simple structure is provided.

According to the 4th aspect of this invention, the film-forming method which can fully suppress the temperature rise of a rectifying plate is provided.

Obvious modifications and variations of the present invention may fall within the scope of the above description. Accordingly, the invention, which is carried out by methods other than those expressly described, is within the scope of additional claims.

All disclosures of Japanese Patent Application No. 2008-191286 filed on July 24, 2008, which is the basis for claiming priority of the present application, that is, the specification, the claims, the drawings, and the solving means, are incorporated herein as is.

1 is a schematic cross-sectional view of the film forming apparatus of Embodiment 1;

2 is a plan view of the rectifying plate of Embodiment 1,

3 is a partial cross-sectional view of the rectifying plate cut along the line AA ′ of FIG. 2;

4 is a perspective view of a cross section of the rectifying plate of FIG. 2 cut in parallel with the ground;

5 is a perspective view of a rectifying plate of Embodiment 2, and

6 is a cross-sectional perspective view of the rectifying plate of Embodiment 3. FIG.

* Explanation of symbols for the main parts of the drawings

101: silicon wafer 102: chamber

103: reaction gas supply path 104: rectification plate

Claims (5)

A film forming apparatus for supplying a reaction gas into a film formation chamber, and heating a substrate placed on the film formation chamber to form a film on the surface of the substrate. A rectifying plate is provided upstream of the direction in which the reaction gas flows with respect to the substrate, A film forming apparatus, wherein a cooling gas passes through an inside of the rectifying plate. The method of claim 1, The rectifying plate has a first through hole provided from an upstream side to a downstream side in a direction in which the reaction gas flows, and And a second through hole provided at a position not intersecting the first through hole, And the reaction gas flows down the substrate through the first through hole, and the cooling gas passes through the second through hole. A film forming apparatus for supplying a reaction gas into a film formation chamber, and heating a substrate placed on the film formation chamber to form a film on the surface of the substrate. A rectifying plate provided with two plates provided at predetermined intervals upstream in the direction in which the reaction gas flows with respect to the substrate, and a connecting tube connecting through holes provided in the two plates, respectively; A film forming apparatus, wherein the reaction gas flows down into the substrate through the inside of the connecting pipe, and a cooling gas passes between the two flat plates. A film forming apparatus for supplying a reaction gas into a film formation chamber, and heating a substrate placed on the film formation chamber to form a film on the surface of the substrate. A rectifying plate provided with a first portion provided with a plurality of through holes and a hollow second portion provided along the periphery of the first portion, on the upstream side of the substrate in a direction in which the reaction gas flows; A film forming apparatus, wherein the reaction gas flows down through the through hole toward the substrate, and a cooling gas passes through the second portion. A film forming method of supplying a reaction gas into a film formation chamber, heating a substrate placed in the film formation chamber to form a film on the surface of the substrate. A plurality of rectifying plates are provided on the upstream side of the substrate in a direction in which the reaction gas flows, and the reaction gas flows toward the substrate through a through hole provided in the rectifying plate while allowing a cooling gas to flow inside the rectifying plate. The film forming method, characterized in that.

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