Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
  • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
• • G—PHYSICS
  • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
  • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
  • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
  • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
  • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
  • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
  • H10D86/441—Interconnections, e.g. scanning lines
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/852—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

• the present invention relates to display devices such as LED displays.
• LEDs light emitting diodes
• liquid crystal displays plasma displays
• organic EL displays organic EL displays.
• LED displays that form a display by arranging them, especially mini LED displays in which the size of the LEDs that serve as light sources are reduced from the conventional 1 mm to 100 to 700 ⁇ m, and micro LED displays in which the size is reduced to 100 ⁇ m or less, are attracting attention and research. Development is actively underway.
• the main features of mini-LED displays and micro-LED displays include high contrast, high-speed response, low power consumption, and wide viewing angle, making them suitable for wearable display applications such as conventional TVs, smartphones, and smart watches. It is expected to be widely used in new applications with high potential, such as signage, AR, VR, and even transparent displays that can display spatial images.
• LED display devices have been proposed for practical use and higher performance, including a form in which micro-LEDs are arranged on a multilayer flexible circuit board (see Patent Document 1), a form in which bank layers and trace lines are provided on a display board, etc. , a configuration in which a micro LED and a micro driver chip are arranged thereon (see Patent Document 2) has been proposed.
• a planarization film is formed on a growth substrate on which a light emitting element body including an electrode pad is integrally formed, and the planarization film on the electrode pad is removed to expose the electrode pad, and the electrode pad is connected to the electrode pad.
• An outer electrode pad is formed on the flattening film, and the outer electrode pad is arranged to face the circuit-side electrode part with respect to the circuit board on which the circuit-side electrode part is formed, and is formed as a front external electrode pad.
• a configuration in which the circuit-side electrode portion is electrically connected (see Patent Document 3) has been proposed.
• the LED display device described in the above-mentioned document had a problem in that the wiring was insufficiently hidden by the surrounding wiring insulating film, protective film, partition wall, etc., resulting in poor design.
• the present invention has the following configuration.
• a display device including at least wiring, a cured film, and a plurality of light emitting elements, wherein the light emitting elements each include electrodes on two different surfaces, and at least one of the electrodes extends into the cured film.
• the plurality of wirings are connected to the plurality of wirings, and the plurality of wirings are configured to maintain electrical insulation by the cured film, and the cured film is a film obtained by curing a resin composition containing (A) resin.
• a display device, wherein the cured film has a transmittance of light at a wavelength of 450 nm of 0.1% or more and 95% or less at a thickness standard of 1 ⁇ m.
• the cured film is provided with an opening pattern penetrating in the thickness direction, and the wiring is arranged at least in the opening pattern, and the bottom part of the wiring is formed at a position in contact with the light emitting element.
• the display device according to any one of [1] to [5], wherein the longest length of is 2 ⁇ m or more and 20 ⁇ m or less.
• a display device including at least a substrate having wiring and/or TFT, a cured film, and a plurality of light emitting elements, wherein the light emitting elements each have electrodes on two different surfaces, and the wiring and/or TFT at least a part of is in contact with the cured film, the cured film is a film obtained by curing a resin composition containing (A) resin, and the cured film has a transmittance of light at a wavelength of 450 nm at a thickness standard of 1 ⁇ m, A display device having a concentration of 0.1% or more and 95% or less.
• the resin (A) contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof.
• the display device according to any one of [12] to [12].
• the resin composition containing the resin (A) further contains (C) a colorant, and the colorant (C) has (C-1) an absorption maximum in a wavelength range of 400 nm or more and 490 nm or less.
• the display device according to any one of [1] to [14], which contains a colorant that has a coloring agent.
• the resin composition containing the (A) resin further contains (C) a colorant, and the (C) colorant has an absorption maximum in the range of (C-2) a wavelength exceeding 490 nm and 580 nm or less.
• the display device according to any one of [1] to [15], containing a colorant having the following properties.
• the resin composition containing the (A) resin further contains (C) a colorant, and the (C) colorant has an absorption maximum in a range of (C-3) exceeding a wavelength of 580 nm and 800 nm or less.
• the display device according to any one of [1] to [15], containing a colorant having the following properties.
• the colorant (C) has an absorption maximum in the wavelength range of 400 nm or more and 490 nm or less, and (C-2) the wavelength range of 490 nm or more and 580 nm or less.
• the display device according to any one of [1] to [15], comprising a colorant having an absorption maximum and (C-3) a colorant having an absorption maximum in a wavelength range exceeding 580 nm and 800 nm or less.
• the display device of the present invention has high wiring concealability, and can provide a display device with a high design.
• FIG. 1 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing an example of a first aspect of a display device of the present invention.
• FIG. 7 is a cross-sectional view taken on a plane perpendicular to the counter substrate, showing another example of the first aspect of the display device of the present invention. They are an enlarged sectional view (a) of designated area A, and a bottom view (b) of the designated area A excluding the light emitting element, as seen from the opposing substrate side.
• FIG. 2 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention having a structure in which partition walls are provided.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate of one embodiment of a display device of the present invention in which a driving element is arranged in a cured film.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to the counter substrate of one embodiment of the display device of the present invention having another configuration in which a driving element is disposed in a cured film.
• FIG. 3 is a cross-sectional view taken along a plane perpendicular to a support base or a counter substrate, illustrating a manufacturing process of one embodiment of a display device of the present invention.
• FIG. 7 is a cross-sectional view taken on a plane perpendicular to the supporting base or the counter substrate, showing an example of another manufacturing process of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken on a plane perpendicular to the support base or the counter substrate, showing an example of another manufacturing process of the display device of the present invention having a structure in which partition walls are provided.
• FIG. 7 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing another embodiment of the display device of the present invention.
• FIG. 2 is a cross-sectional view taken in a plane perpendicular to a support base, showing one embodiment of a display device of the present invention having a structure in which a partition wall is provided in a cured film.
• FIG. 7 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing another embodiment of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing another embodiment of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing another embodiment of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken along a plane perpendicular to a counter substrate, showing another embodiment of the display device of the present invention.
• FIG. 2 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention having a structure in which a light-shielding layer is provided.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to the support base, showing the opening pattern of the cured film.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a support base, showing a manufacturing process of one embodiment of a display device of the present invention having a structure in which a partition wall is provided.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a support base, showing a manufacturing process of one embodiment of a display device of the present invention having a structure in which a light-shielding layer is provided.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to a light emitting element driving substrate, showing an example of a manufacturing process of a display device according to a second aspect of the present invention.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 3 is a cross-sectional view taken in a plane perpendicular to a counter substrate, showing one embodiment of a display device of the present invention using light emitting elements with different connection modes.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to the element drive substrate, showing an example of a second aspect of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to the element drive substrate, showing an example of a second aspect of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to the element drive substrate, showing an example of a second aspect of the display device of the present invention.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to the support substrate, showing another example of the second embodiment of the display device of the present invention using light emitting elements with different connection modes.
• FIG. 7 is a cross-sectional view taken in a plane perpendicular to a light emitting element drive substrate, showing an example of a manufacturing process of a display device according to a second aspect of the present invention.
• a first aspect of the display device of the present invention is a display device including at least wiring, a cured film, and a plurality of light emitting elements, the light emitting elements each having electrodes on two different surfaces, and at least one of the electrodes. is connected to the plurality of wirings extending in the cured film, and the plurality of wirings are configured to maintain electrical insulation by the cured film, and the cured film contains (A) resin. It is a film obtained by curing a resin composition containing the cured film, and the transmittance of light at a wavelength of 450 nm at a thickness of 1 ⁇ m is 0.1% or more and 95% or less.
• FIG. 1 A display device according to the first aspect of the present invention will be explained using FIG. 1 as an example.
• a display device 1 includes a plurality of light emitting elements 2 arranged on a counter substrate 5, and a cured film 3 arranged on the light emitting elements 2.
• the light emitting element has a polyhedral three-dimensional shape.
• a polyhedral three-dimensional shape is a three-dimensional shape having a plurality of faces, preferably having at least one pair of parallel faces, and includes, for example, a tetrahedron, a hexahedron such as a rectangular parallelepiped, a cube, an octahedron, etc.
• the light emitting element has electrodes on two different surfaces. Providing electrodes on two different surfaces means that in a multifaceted three-dimensional light emitting element, when one of the surfaces with electrodes is used as a reference surface, the other electrodes are provided on a surface different from the reference surface. say.
• the reference surface refers to a continuous range of surfaces within a polyhedral three-dimensional shape, and surfaces that are separated by grooves within a polyhedral three-dimensional shape even if they are spatially in the same plane are defined as the reference surface. It is a different aspect from that. Furthermore, when focusing on one light emitting element, the electrodes provided on the two different surfaces may be referred to as a pair of electrodes.
• an electrode provided on a light emitting element refers to a connection site for transmitting a signal from wiring to the light emitting element to control light emission of the light emitting element.
• one electrode is provided on the surface connected to the wiring 4 extending in the cured film 3, and the opposite substrate side is provided with one electrode. have other electrodes on their respective faces.
• one electrode of a pair of electrodes provided on each of the plurality of light emitting elements is connected to a plurality of wirings 4 extending in the cured film 3, respectively.
• a configuration is illustrated in which a plurality of cured films 3 are further laminated on the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2, and a total of three layers are laminated.
• the cured film 3 may be a single layer.
• the light emitting element 2 is provided with electrodes 6 on two different surfaces, and one of the pair of electrodes 6 is connected to the wiring 4 extending in the cured film 3.
• the plurality of wirings 4 extending in the cured film 3 are separated by the cured film 3. With this structure, the plurality of wirings 4 maintain electrical insulation due to the cured film 3.
• the cured film 3 is preferably a cured film obtained by curing a resin composition containing resin (A), which will be described later.
• the electrode 6 that is not connected to the wiring 4 extending in the cured film 3 is connected to the wiring 4d.
• the wiring 4d may be formed on a support substrate, which will be described later, or may be formed on a counter substrate 5.
• the wiring 4d may be formed after forming a temporary bonding layer of a temporary bonding material on the support substrate.
• the electrode 6 and the wiring 4d may be connected through a bump, a conductive film, or the like, or may be directly connected.
• the wiring 4d may be covered with the cured film 3 to maintain electrical insulation, and the cured film 3 and the wiring 4d may form a laminated structure of two or more layers.
• the wiring 4d may be connected to the wiring 4 extending in the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2 through a through electrode or the like, and may be connected to the wiring 4 extending in the cured film 3 disposed so as to be in contact with at least a part of the light emitting element 2.
• Wiring may be arranged and connected to the wiring 4 extending in the cured film 3, or may be connected to the light emitting element drive board 7.
• the light emitting element 2 is electrically connected to a driving element 8 added to a light emitting element driving board 7 provided at a position facing the counter substrate 5 through the wirings 4 and 4c, so that the light emitting element 2 emits light. can be controlled.
• the light emitting element drive board 7 is electrically connected to the wiring 4 via bumps 10, for example.
• a barrier metal 9 may be provided to prevent diffusion of metal such as the wiring 4.
• the wiring 4c in the figure may be formed on the side surface of the light emitting element driving board 7, or may be formed through the light emitting element driving board 7, or may be connected to the driving element 8 as a wiring constituting the light emitting element driving board. May be connected.
• the wiring 4d and the electrode 6 are arranged between the counter substrate 5 and the light emitting element 2, and the cured film 3 is arranged between the counter substrate 5 and the light emitting element 2 in a manner that is adjacent to the wiring 4 and the electrode 6.
• the figure shows an example of how the However, the wiring 4 and the electrode 6 may be formed so as to cover the entire plane of the light emitting element 2, and the cured film 3 may not be disposed between the counter substrate 5 and the light emitting element 2, or the wiring 4 and the electrode 6 shown in FIG. is formed as a thin film, the resin film 21 (described later) will not be able to reach the area next to the wiring 4 and the electrode 6, and the cured film 3 will not be formed between the counter substrate 5 and the light emitting element 2.
• This embodiment also includes a form in which a cavity is formed in part.
• the cured film 3 has a light transmittance of 0.1% or more and 95% or less at a wavelength of 450 nm when the thickness of the cured film 3 is 1 ⁇ m. Thereby, the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves the design.
• the cured film 3 is a film obtained by curing a resin composition containing resin (A), which will be described later, and the light transmittance at a wavelength of 450 nm at a thickness standard of 5 ⁇ m is 0.1% or more and 79% or less. It is preferable that Thereby, the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves the design.
• the cured film 3 is a film obtained by curing a resin composition containing resin (A), which will be described later, and the light transmittance at a wavelength of 450 nm at a thickness standard of 1 ⁇ m is 0.1% or more and 25% or less. It is preferable that As a result, the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves design.Furthermore, visibility is improved by reducing external light reflection and improving contrast. can be increased.
• the light transmittance at a wavelength of 450 nm at a standard thickness of 1 ⁇ m of the cured film 3 is less than 0.1%, there is a concern that problems such as a decrease in sensitivity and resolution of the resin film before curing may occur.
• the light transmittance exceeds 95% the wiring concealment property is reduced, the glare of the wiring is insufficiently suppressed, and there is a concern that problems such as the wiring being visible from the outside may occur.
• the cured film of the display device may be peeled off and measured, or the conditions of the evaluation method of the light transmittance of the cured film described below. You may also measure the light transmittance of the cured film prepared in . Furthermore, when a plurality of cured films are formed, any of the cured films may be used for measurement. The measurement of the light transmittance at a wavelength of 450 nm when the thickness of the cured film is 5 ⁇ m is the same as the measurement of the light transmittance at a wavelength of 450 nm when the thickness of the cured film is 1 ⁇ m.
• the thickness of the measured transmission spectrum may be converted to 1 ⁇ m according to Lambert's law. Further, even if the thickness of the cured film is not 5 ⁇ m, the conversion may be performed according to Lambert's law, as in the case where the thickness of the cured film is not 1 ⁇ m.
• the materials for the wirings 4, 4c, 4d and the electrodes 6 are not particularly limited, and include metals, conductive films, and the like, and known materials may also be used.
• Metals are preferable from the viewpoint of electron mobility, and examples thereof include gold, silver, copper, aluminum, nickel, titanium, molybdenum, and alloys containing these.
• These metals can be produced by, for example, wet plating such as electroless plating and electrolytic plating, CVD chemical vapor deposition (CVD) such as thermal CVD, plasma CVD, and laser CVD, dry plating methods such as vacuum evaporation, sputtering, and ion plating. It can be formed by etching after bonding the metal foil to the substrate.
• wet plating such as electroless plating and electrolytic plating
• CVD chemical vapor deposition (CVD) such as thermal CVD, plasma CVD, and laser CVD
• dry plating methods such as vacuum evaporation, sputtering, and ion plating. It can be formed by etching after bonding the metal foil to the substrate.
• the conductive film is preferable from the viewpoint of transparency, and is made of, for example, a compound containing as a main component an oxide of at least one element selected from indium, gallium, zinc, tin, titanium, niobium, etc., an organic substance, and conductive particles.
• examples include photosensitive conductive paste, but other known materials may also be used.
• Examples of compounds containing as a main component an oxide of at least one element selected from indium, gallium, zinc, tin, titanium, niobium, etc. include indium tin zinc oxide (ITZO), indium gallium zinc oxide, etc. (IGZO: InGaZnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium tin oxide (ITO), and indium oxide (InO).
• These conductive films can be formed by wet plating such as electroless plating or electrolytic plating, CVD chemical vapor deposition (CVD) such as thermal CVD, plasma CVD, or laser CVD, or dry plating such as vacuum evaporation, sputtering, or ion plating. It can be formed by, for example, a method in which a metal foil is bonded to a substrate and then etched.
• CVD chemical vapor deposition such as thermal CVD, plasma CVD, or laser CVD
• dry plating such as vacuum evaporation, sputtering, or ion plating. It can be formed by, for example, a method in which a metal foil is bonded to a substrate and then etched.
• the content of the conductive particles is preferably 60% by mass or more and 90% by mass or less.
• the conductive layer contains an organic substance, disconnection can be suppressed on curved surfaces and bent portions, and conductivity can be improved.
• the content of the conductive particles is less than 60% by mass, the probability of contact between the conductive particles becomes low, and the conductivity decreases. Further, the conductive particles tend to separate from each other at the bent portion of the wiring.
• the content of conductive particles is preferably 70% by mass or more.
• the content of the conductive particles exceeds 90% by mass, it becomes difficult to form a wiring pattern, and disconnections are likely to occur at bent portions.
• the content of conductive particles is preferably 80% by mass or less.
• organic substances include epoxy resins, phenoxy resins, acrylic copolymers, and epoxy carboxylate compounds. Two or more types of these may be contained. It may also contain an organic substance having a urethane bond. By containing an organic substance having a urethane bond, the flexibility of the wiring can be improved. Further, the organic substance preferably exhibits photosensitivity, and a fine wiring pattern can be easily formed by photolithography. Photosensitivity is developed by, for example, containing a photopolymerization initiator and a component having an unsaturated double bond.
• the conductive particles in the present invention refer to particles made of a substance having an electrical resistivity of 10 ⁇ 5 ⁇ m or less.
• the material constituting the conductive particles include silver, gold, copper, platinum, lead, tin, nickel, aluminum, tungsten, molybdenum, chromium, titanium, indium, alloys of these metals, and carbon particles.
• the average particle diameter of the conductive particles is preferably 0.005 ⁇ m or more and 2 ⁇ m or less.
• the average particle diameter here refers to the average particle diameter of large-diameter particles when two or more types of conductive particles are contained.
• the average particle diameter of the conductive particles is more preferably 0.01 ⁇ m or more.
• the average particle diameter of the conductive particles is 2 ⁇ m or less, it becomes easier to form a desired wiring pattern.
• the average particle diameter of the conductive particles is more preferably 1.5 ⁇ m or less.
• the thickness of the conductive film is preferably 2 ⁇ m or more and 10 ⁇ m or less. When the thickness of the conductive film is 2 ⁇ m or more, disconnection at the bent portion can be further suppressed and the conductivity can be further improved.
• the thickness of the conductive film is more preferably 4 ⁇ m or more. On the other hand, when the thickness of the conductive film is 10 ⁇ m or less, a wiring pattern can be more easily formed in the manufacturing process.
• the thickness of the conductive film is more preferably 8 ⁇ m or less.
• the cured film 21 disposed so as to be in contact with at least a portion of the light emitting element 2 may be composed of a cured film obtained by curing a resin composition or a resin sheet containing (A) resin, or a cured film containing (A) resin. It may be composed of a material other than a cured film obtained by curing a resin composition or a resin sheet, and known materials such as epoxy resin, silicone resin, and fluororesin may be used.
• the light emitting element driving substrate 7 includes a substrate having an element having a driving function, etc., and it is preferable that the driving element 8 is connected.
• the light emitting element driving substrate 7 is not particularly limited, and any known substrate can be used. Examples include glass substrates, sapphire substrates, printed wiring boards, TFT array substrates, and ceramics. Wiring may be formed on at least one surface of a glass substrate or a sapphire substrate. When using a printed wiring board, it is possible to connect to the driving element 8, the bumps 10, the wiring 4, etc. without forming the wiring 4c.
• the total thickness of the cured film is preferably 5 ⁇ m or more and 100 ⁇ m or less.
• the total thickness of the cured film is 5 ⁇ m or more and 100 ⁇ m or less, the light transmittance of the cured film 3 is low, so the cured film 3 hides the wiring 4, suppresses glare on the wiring 4, and prevents external light from entering. It is possible to improve the design by making it difficult to see. Furthermore, it is possible to reduce the height of the display device itself having a light-emitting element, to suppress wiring defects such as short circuits due to short wiring distances, to suppress loss reduction, and to improve high-speed response. In addition, visibility can be improved by reducing reflection of external light and improving contrast.
• the total thickness of the cured film refers to the thickness of the entire layer of continuous cured films in which at least a portion of one cured film is in contact with another cured film.
• the range indicated by 20 in FIG. 1 is the thickness of the entire layer of the cured film.
• the overall thickness is preferably 5 ⁇ m or more and 70 ⁇ m or less, more preferably 5 ⁇ m or more and 60 ⁇ m or less.
• the number of cured films is 2 or more and 10 or less.
• the cured film preferably has one or more layers, and furthermore, by having two or more layers, the number of wirings that can be connected to the light emitting elements can be increased, so that multiple light emitting elements can be arranged.
• the number of layers is preferably 10 or less from the viewpoint of suppressing wiring defects such as wiring short circuits due to reduction in package height and short wiring distance, reduction in loss, and improvement in high-speed response.
• the cured film is provided with an opening pattern penetrating in the thickness direction, and the wiring is disposed in at least the opening pattern, and the bottom surface of the wiring is formed at a position in contact with the light emitting element. It is preferable that the longest length of is 2 ⁇ m or more and 20 ⁇ m or less.
• FIG. 2 shows an enlarged sectional view (a) of the designated area A in FIG. 1 and a bottom view (b) of the surface of the designated area A excluding the light emitting element, as viewed from the counter substrate side.
• the cured film 3 is provided on the light emitting element 2.
• the cured film 3 is provided with an opening pattern 12, and the diagram shows wiring 4 formed in the opening pattern 12.
• the bottom surface portion 13 of the wiring 4 extends into the cured film 3 to the position where the wiring 4 contacts the electrode 6 of the light emitting element 2, and shows the form of the wiring 4 at the contact point.
• the bottom view (b) of the designated area A in FIG. 2 from which the light emitting elements are removed viewed from the opposing substrate side
• the bottom view (lower part) of the designated area A in FIG. 2 excluding the light emitting element is a view of the bottom part 13 of the wiring 4 extending on the cured film 3 with the light emitting element 2 removed, as seen from below. , shows the bottom part 13.
• the shape of the bottom part 13 may differ depending on the product or the form of the light emitting element.
• the diameter is defined as the longest length 14, and in the case of an elliptical shape, the major axis is defined as the longest length 14. In the case of a polygon, the longest diagonal line connecting the corner vertices is defined as the longest length 14. Note that the bottom surface portion 13 in the bottom view (b) of the designated area A in FIG. 2 excluding the light emitting elements when viewed from the counter substrate side shows an example in which the bottom surface portion 13 is circular.
• a minute light emitting element can be applied, and a plurality of light emitting elements can be mounted in high density, and a display device having high resolution light emitting elements in a wide range of sizes can be obtained. It becomes possible to form even finer wiring, and the number of wirings that can be formed in a unit area increases, making it possible to reduce the overall thickness of the cured film.Since the light transmittance of the cured film 3 is low, the cure The film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves the design.
• the display device itself having a light-emitting element it is possible to reduce the height of the display device itself having a light-emitting element, to suppress wiring defects such as short circuits due to short wiring distances, to suppress loss reduction, and to improve high-speed response.
• visibility can be improved by reducing reflection of external light and improving contrast.
• the longest length of the bottom portion of the wiring formed in the vicinity of the light emitting element is 2 ⁇ m or more and 20 ⁇ m or less.
• the longest length of the bottom part of the wiring is preferably 2 ⁇ m or more and 15 ⁇ m or less, more preferably 2 ⁇ m or more and 10 ⁇ m or less, and even more preferably , 2 ⁇ m or more and 5 ⁇ m or less. If it is less than 2 ⁇ m, poor connection with the light emitting element 2 may occur, and if it exceeds 20 ⁇ m, it may become an obstacle to the application of minute light emitting elements or high-density packaging.
• the thickness of the cured film is preferably at least 1.1 times and at most 20.0 times the thickness of the wiring.
• the thickness of the wiring refers to the thickness a of the wiring 4 disposed on the surface of the cured film 3, as shown in the enlarged cross-sectional view (a) of the designated area A in FIG.
• the thickness of the wiring 4b extending in the opening pattern penetrating in the horizontal direction is not included.
• the thickness of the wiring is preferably 0.1 ⁇ m or more and 10 ⁇ m or less, more preferably 3 ⁇ m or more and 10 ⁇ m or less.
• the thickness of the cured film refers to the thickness of the cured film 3a that covers the wiring 4a, as explained using the enlarged cross-sectional view (a) of the designated area A in FIG.
• the thickness of the wiring may be the same or different in each layer. If they are different, for example, in FIG. 1, it is preferable that the thickness of the wiring near the bump 10 is thicker than the thickness of the wiring near the light emitting element 2. Thereby, wiring defects can be suppressed when connecting the light emitting element drive substrate 7 using the bumps 10, and a highly reliable display device can be obtained.
• the cured film covers a surface other than the light extraction surface of the light emitting element.
• the light extraction surface is defined as a light extraction surface if there is a region from which light can be extracted even if a part of the surface of the light emitting element is covered with the cured film.
• FIG. 3 is a cross-sectional view (a) of the light emitting element driving substrate side of the designated area B in FIG. (b) is a cross-sectional view at a position other than the designated area B, and (c) is a bottom view of the designated area B excluding the opposing substrate, as viewed from the opposing substrate side.
• the light emitting element 2 is covered with a cured film 3, and the light emitting element electrode 6 and The wiring 4 connecting and extending into the cured film 3 is shown from the top.
• the cross-sectional shape of the wiring 4 may be circular or polygonal.
• the light emitting element 2 when viewed from the counter substrate side, the light emitting element 2 is covered with a cured film 3, and the other electrode 6 of the light emitting element is covered with a hardened film 3. is shown from below.
• the cross-sectional shape of the electrode 6 may be circular or polygonal.
• the light emitting element 2 may be covered with the cured film 3 except for the electrodes 6. In this case, the light extraction surface is the surface on which the electrode 6 is arranged.
• the light emitting element 2 can be protected from external impact by covering the entire side surface and upper surface of the light emitting element 2 with the cured film 3. Further, it is possible to flatten the level difference caused by the arrangement of the light emitting element 2, and it is also preferable because it facilitates bonding with the counter substrate 5.
• the cured film 3 that covers the surface other than the light extraction surface of the light emitting element 2 has the above-mentioned high wiring concealment property, thereby suppressing the glare of the wiring 4, making it difficult to see from the outside, and improving the design. can.
• a display device includes at least a substrate having wiring and/or a TFT, a cured film, and a plurality of light emitting elements, the light emitting elements having electrodes on two different surfaces.
• the cured film is a film obtained by curing a resin composition containing (A) resin, and the thickness of the cured film is 1 ⁇ m as standard.
• the transmittance of light with a wavelength of 450 nm is 0.1% or more and 95% or less.
• FIG. 25 A display device according to the second aspect of the present invention will be described using FIG. 25 as an example.
• the cured film 3 is arranged so that at least a part of the substrate having wiring and/or TFTs is in contact with the cured film 3.
• the substrate having wiring and/or TFT is, for example, a light emitting element driving substrate 7, and an example thereof is a TFT array substrate on which wiring 4 is arranged.
• the light emitting element 2 having electrodes on two different surfaces is disposed on the wiring 4e.
• a polyhedral three-dimensional light emitting element has one electrode on the surface connected to the wiring 4e and the other electrodes on the surface facing the counter substrate. Further, a configuration in which a cured film 3 is provided between or around the light emitting elements 2 is illustrated. The one of the pair of electrodes 6 that is not connected to the wiring 4e is connected to the wiring 4d.
• the wiring 4d may be formed on the counter substrate 5. The electrode 6 and the wiring 4d may be connected through a bump, a conductive film, or the like, or may be directly connected.
• the wiring 4d may be connected to the wiring 4 extending in the cured film 3 disposed so as to be in contact with at least a part of the light emitting element 2 through a through electrode or the like, and may be connected to the wiring 4 extending in the cured film 3 arranged so as to be in contact with at least a part of the light emitting element 2.
• Wiring may be placed on the substrate and connected to the wiring 4e, or may be connected to the light emitting element drive board 7.
• the light emitting element 2 is electrically connected to a driving element 8 added to a light emitting element driving board 7 provided at a position facing the counter substrate 5 through the wirings 4 and 4c, so that the light emitting element 2 emits light. can be controlled.
• the light emitting element drive board 7 is electrically connected to the wiring 4 via bumps 10, for example. Further, a barrier metal 9 may be provided to prevent diffusion of metal such as the wiring 4.
• the wiring 4c in the drawings may be formed on the side surface of the light emitting element driving board 7, may penetrate through the light emitting element driving board 7, or may be connected to the driving element 8 as a wiring constituting the light emitting element driving board. It's okay.
• the total thickness of the cured film is preferably 1 ⁇ m or more and 20 ⁇ m or less.
• the total thickness of the cured film is preferably 1 ⁇ m or more and 20 ⁇ m or less.
• the total thickness of the cured film refers to the total thickness of a continuous layer of cured films in which at least a portion of one cured film is in contact with another cured film.
• the range indicated by 20 in FIG. 25 described above is the thickness of the entire layer of the cured film.
• the total thickness is preferably 1 ⁇ m or more and ⁇ 10 ⁇ m or less, more preferably 1 ⁇ m or more and 5 ⁇ m or less. If it is less than 1 ⁇ m, the protection of the wiring will be insufficient, and there is a risk of wiring defects such as short circuits. If it exceeds 10 ⁇ m, it will be difficult to form fine wiring, resulting in inconveniences in terms of wiring defects such as short circuits. There are cases.
• a partition wall having a thickness greater than the thickness of the light emitting elements is provided between the plurality of light emitting elements.
• partition walls 15 in a repeating pattern corresponding to the number of pixels of the display device 1 having the light emitting elements 2, that is, between or around each light emitting element 2.
• the electrode 6 and the wiring 4 or 4d may be connected through a bump, a conductive film, or the like, or may be directly connected. This configuration is preferable because it facilitates bonding with the counter substrate 5 which may include the wiring 4d.
• the thickness of the partition wall is preferably larger than the thickness of each light emitting element, and specifically, preferably 5 ⁇ m or more and 120 ⁇ m or less.
• the partition wall may be composed of a cured film obtained by curing a resin composition containing (A) resin, or may be composed of a material other than the resin composition containing (A) resin, such as epoxy resin, (meth) )
• Known materials such as acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. By using these materials, partition walls with excellent adhesion can be formed.
• a light shielding portion may be provided on the side surface of the partition wall or on the partition wall itself.
• the light shielding portion is a portion containing, for example, a black pigment.
• a reflective portion may be provided on the side surface of the partition wall to improve brightness.
• the reflective portion is a portion containing, for example, a white pigment.
• a partition wall having a thickness equal to or greater than the thickness of the light emitting elements is disposed between the plurality of light emitting elements in the cured film covering the light emitting elements.
• partition walls are provided, as shown in FIG. 11, a configuration in which partition walls 15 are provided between or around the light emitting elements 2 in the cured film 3 that covers the light emitting elements 2 is illustrated.
• the partition wall shown in FIG. 11 may be made of a material other than the resin composition containing resin (A), and known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. You may. By using these materials, partition walls with excellent adhesion can be formed.
• a light shielding portion may be provided on the side surface of the partition wall or on the partition wall itself.
• the light shielding portion is a portion containing, for example, a black pigment.
• the light emitted from the light emitting element toward the partition wall can be reflected to increase the light extraction efficiency, and a reflective part may be provided on the side surface of the partition wall to improve the brightness.
• the reflective portion is a portion containing, for example, a white pigment.
• a light diffusion layer may be provided around the light emitting element, cured film, or wiring.
• the light emitting element is preferably an LED with a side length of 5 ⁇ m or more and 700 ⁇ m or less, and more preferably the light emitting element is an LED with a side length of 5 ⁇ m or more and 100 ⁇ m or less. .
• An LED is composed of a PN junction in which a P-type semiconductor and an N-type semiconductor are joined, and when a forward voltage is applied to the LED, electrons and holes move within the chip, causing current to flow. At this time, an energy difference is created by the combination of electrons and holes, and the surplus energy is converted into light energy, which emits light.
• the wavelength of light emitted from an LED varies depending on the compound that constitutes the semiconductor, such as GaN, GaAs, InGaAlP, and GaP, and this difference in wavelength determines the color of the emitted light.
• white is generally displayed by mixing two or more different colors of light, but in the case of LEDs, color reproducibility is greatly improved by mixing the three primary colors of red, green, and blue. This has been improved, making it possible to display a more natural white color.
• the shape of the LED includes a bullet shape, a chip shape, a polygonal shape, etc., but a chip shape and a polygonal shape are preferable from the viewpoint of miniaturization of the LED. Further, it is preferable that the length of one side of the LED is 5 ⁇ m or more and 700 ⁇ m or less, since this allows a plurality of chips to be arranged, and it is more preferable that the length of one side of the LED is 5 ⁇ m or more and 100 ⁇ m or less.
• the light emitting element is provided with electrodes on two different surfaces.
• Two different planes means that, for a light emitting element having two or more planes, when one of the planes having an electrode is used as a reference plane, the other electrodes are respectively located on a plane different from the reference plane.
• electrodes are provided on the surfaces facing each other with the light emitting element interposed therebetween. Further, it is preferable that electrodes are provided on adjacent surfaces of the light emitting element.
• An example of providing electrodes on two different surfaces of the light emitting element is a structure in which the electrodes 6 are arranged on opposite surfaces with the light emitting element 2 in between, as shown in FIGS.
• An example of a structure in which adjacent surfaces are provided with the same structure as shown in FIG. 21 is exemplified.
• the discontinuous surface is not a continuous surface, but a surface with steps, and includes, for example, the structures shown in FIGS. 22 to 24.
• the electrodes 6 By providing the electrodes 6 on discontinuous surfaces, the light emitting area in the light emitting element can be controlled, and the productivity and luminous efficiency of the light emitting element can be improved.
• a pick and place method or a mass transfer method As for the method of mounting the light emitting element onto a substrate such as the light emitting element drive board 7 on which the cured film 3 is arranged, for example, a pick and place method or a mass transfer method has been proposed, but the present invention is not limited to these methods.
• a single type of light emitting element such as an ultraviolet light emitting element that emits ultraviolet light
• the former method may use light-emitting elements that emit red, green, and blue light, respectively, or may use light-emitting elements that emit red, green, and blue light that are vertically stacked.
• the latter method can facilitate array mounting of light emitting elements.
• a wavelength conversion material such as a quantum dot can be used to create red, green, and blue sub-pixels for full-color display.
• two or more light emitting elements may be packaged and then mounted on a substrate.
• the wavelength conversion material known materials can be used.
• a light-emitting element that emits blue light first, a light-emitting element array substrate is fabricated in which only light-emitting elements that emit blue light are arranged and mounted, and then blue light is added at positions corresponding to red and green sub-pixels. It is preferable to arrange a wavelength conversion layer that is excited by light and converts the wavelength to emit red or green light. This makes it possible to form red, green, and blue subpixels using only light emitting elements that emit blue light.
• a light-emitting element array substrate is fabricated on which only ultraviolet light-emitting elements are arranged and mounted, and ultraviolet light is placed at positions corresponding to red, green, and blue sub-pixels. It is preferable to arrange a wavelength conversion layer that converts the wavelength of light into red, green, or blue light by being excited by the light. Thereby, it is possible to suppress the difference in the light emission angle due to the color of the sub-pixel described above.
• the wavelength conversion layer a known one can be used, and a color filter or the like may be used if necessary.
• the counter substrate in the present invention is not particularly limited, and known ones can be used. Examples include glass plates, resin plates, resin films, sapphire substrates, printed wiring boards, TFT array substrates, and ceramics.
• As the material of the glass plate alkali-free glass is preferable.
• Preferred materials for the resin plate and resin film include polyester, (meth)acrylic polymer, transparent polyimide, polyether sulfone, and the like.
• the thickness of the glass plate and the resin plate is preferably 1 mm or less, and preferably 0.8 mm or less.
• the thickness of the resin film is preferably 100 ⁇ m or less.
• the display device of the present invention includes a driving element, and the light emitting element is electrically connected to the driving element through wiring extending in the cured film.
• the display device includes a driving element, and the light emitting element is electrically connected to the driving element through wiring extending in the cured film, so that one or more light emitting elements can be individually driven by switching.
• drive elements include driver ICs, and one or more driver ICs are used for packages of one or more light emitting elements for each function, or multiple light emitting elements of red, blue, green, etc. You may.
• the driving elements 8 in the cured film 3 on the counter substrate 5 in the vicinity of the light emitting elements 2. Further, as shown in FIG. 6, a configuration in which the driving element 8 is disposed in the cured film 3 at a position above the light emitting element 2 is also preferable. This makes it possible to suppress wiring defects such as short circuits due to short wiring distances, suppress loss reduction, and improve high-speed response.
• the device further includes a driving element and a substrate, the driving element is connected to the light emitting element through wiring, and furthermore, at least a part of the wiring extends to a side surface of the substrate. It has a driving element and a substrate, the driving element is connected to the light emitting element through wiring, and furthermore, at least a part of the wiring extends to the side surface of the substrate, so that the plurality of light emitting elements can be individually switched and driven.
• the height of the display device itself can be reduced and its high-speed response can be improved, and the display device can also be made smaller and have a narrower frame.
• the substrate is not particularly limited, and any known substrate can be used. Examples include glass substrates, sapphire substrates, TFT array substrates, and ceramics.
• the wiring at least a portion of which extends on the side surface of the substrate, is preferably arranged as shown in FIGS. 1, 4, and 4c in FIGS. 12 to 14, for example.
• a light shielding layer is further provided between the plurality of light emitting elements.
• the light shielding layer may be composed of a cured film obtained by curing a resin composition containing (A) resin and (E) a coloring material, or may be composed of a material other than the resin composition containing (A) resin.
• a resin composition containing (A) resin and (E) a coloring material may be composed of a material other than the resin composition containing (A) resin.
• Well-known materials such as epoxy resins, (meth)acrylic polymers, polyurethanes, polyesters, polyolefins, and polysiloxanes may be used.
• a black pigment may be used, such as black organic pigments such as carbon black, perylene black, and aniline black, graphite, and titanium, copper, iron, manganese, cobalt, chromium, nickel, and zinc.
• metal fine particles such as calcium and silver
• inorganic pigments such as metal oxides, composite oxides, metal sulfides, metal nitrides, and metal oxynitrides.
• it may be made black by combining a red pigment, a blue pigment, and, if necessary, a yellow pigment or other pigments.
• a dye may also be used. Two or more types of colorants may be contained.
• Photosensitivity may be imparted to the resin composition containing (A) resin and (E) colorant, and (B) photosensitizer described below may be used.
• a method for producing a resin composition containing (A) resin and (E) coloring material for example, using a dispersing machine, (A) resin, (E) coloring material, and optionally dispersing agent and organic solvent are added.
• a preferred method is to prepare a coloring material dispersion liquid with a high coloring material concentration by dispersing a resin solution containing the resin, and then adding the resin (A) and, if necessary, other components such as a photosensitizer and stirring. Filtration may be performed if necessary.
• Examples of the dispersing machine include a ball mill, bead mill, sand grinder, three-roll mill, and high-speed impact mill. Among these, bead mills are preferred for improving dispersion efficiency and fine dispersion.
• Examples of the bead mill include a coball mill, a basket mill, a pin mill, and a dyno mill.
• Examples of beads used in the bead mill include titania beads, zirconia beads, and zircon beads.
• the bead diameter of the bead mill is preferably 0.03 mm or more and 1.0 mm or less.
• a light-shielding layer can be obtained by applying a resin composition containing (A) resin and (E) coloring material to various substrates, drying, and then heat-treating.
• a patterned light-shielding layer can be obtained by irradiation with actinic radiation, which will be described later, and subsequent development and heat treatment, which will be described later.
• the thickness of the light shielding layer is preferably 0.1 ⁇ m or more and 5 ⁇ m or less.
• the thickness of the light shielding layer is more preferably 0.5 ⁇ m or more.
• the thickness of the wiring is 5 ⁇ m or less, light leakage from the light emitting element and color mixing between pixels can be suppressed and contrast can be improved without significantly impairing light extraction efficiency.
• the thickness of the light shielding layer is more preferably 4 ⁇ m or less.
• the light shielding layer is a colored film formed on a 0.7 mm thick alkali-free glass to a thickness of 1.0 ⁇ m, and the reflected chromaticity values (a*, b*) measured from the glass surface are as follows. -0.5 ⁇ a* ⁇ 1.0 and -1.0 ⁇ b* ⁇ 0.5, preferably -0.5 ⁇ a* ⁇ 0.5 and -1.0 ⁇ b* ⁇ 0 .4 is preferable.
• the reflected color tone of the black display of liquid crystal display devices and organic EL displays generally has a negative value of b*, which is a bluish tone. It is preferable that
• the reflection chromaticity (L*, a*, b*) of the colored film was measured using a spectrophotometer (CM-2600d; manufactured by Konica Minolta, Inc.) calibrated with a white calibration plate (CM-A145; manufactured by Konica Minolta, Inc.).
• CM-2600d spectrophotometer
• CM-A145 white calibration plate
• SCI total internal reflection chromaticity
• the configuration of the light shielding layer it is preferable to arrange it as shown at 25 in FIG. 15, for example.
• the light shielding layer 25 may be in contact with the light emitting element 2 or may be separated from it.
• the cured film obtained by curing the resin composition containing the resin (A) has a light transmittance of 0.1% or more and 95% or less at a wavelength of 450 nm at a thickness standard of 1 ⁇ m.
• the light transmittance at a wavelength of 450 nm at a thickness standard of 5 ⁇ m of the cured film is 0.1% or more and 79% or less. This suppresses the glare of the wiring, makes it difficult to see from the outside, and improves the design.
• the light transmittance at a wavelength of 450 nm at a thickness of the cured film of 1 ⁇ m is 0.1% or more and 25% or less. This can suppress the glare of the wiring, make it difficult to see from the outside, and improve the design.Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the light transmittance at a wavelength of 450 nm is less than 0.1% when the thickness of the cured film is 1 ⁇ m, there is a concern that problems such as a decrease in sensitivity and resolution of the resin film before curing may occur.
• the light transmittance exceeds 95%, the wiring concealment property is reduced, the suppression of glare of the wiring is insufficient, and there is a concern that problems such as being visible from the outside may occur.
• the resin (A) preferably has high heat resistance, and specifically, it is preferably one that shows little resin deterioration at high temperatures of 160° C. or higher during and after heat treatment.
• a cured film is preferable because it reduces the amount of outgassing, which is one of its excellent properties as a cured film used as a display device, such as an insulating film, a protective film, and a partition wall.
• the resin (A) preferably has a high light transmittance at the exposure wavelength before curing. In order to obtain such properties, it is preferable to shorten the conjugated chain derived from the aromatic ring of the resin, or to reduce charge transfer within or between molecules.
• the resin (A) is not particularly limited, but is preferably an alkali-soluble resin from the viewpoint of reducing environmental impact.
• Alkali-soluble means that a solution of a resin dissolved in ⁇ -butyrolactone is applied onto a silicon wafer and prebaked at 120° C. for 4 minutes to form a prebaked film with a thickness of 10 ⁇ m ⁇ 0.5 ⁇ m.
• prebaking is a process of heating and drying after coating, and the prebaking film refers to a film obtained through heating and drying. Further, the pre-baked film is synonymous with the resin film.
• the prebaked film is immersed in a 2.38% by mass tetramethylammonium hydroxide aqueous solution at 23 ⁇ 1° C. for 1 minute, and then rinsed with pure water to determine the decrease in film thickness.
• the prebaked film having a dissolution rate of 50 nm/min or more is defined as being alkali-soluble.
• the resin (A) preferably contains one or more resins selected from the group consisting of polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and copolymers thereof.
• the resin (A) may contain these resins alone or may contain a combination of a plurality of resins.
• the polyimide is not particularly limited as long as it has an imide ring.
• the polyimide precursor is not particularly limited as long as it has a structure that becomes a polyimide having an imide ring by dehydration and ring closure, and it can contain polyamic acids, polyamic acid esters, and the like.
• Polybenzoxazole is not particularly limited as long as it has an oxazole ring.
• the polybenzoxazole precursor is not particularly limited as long as it has a structure that becomes a polybenzoxazole having a benzoxazole ring upon dehydration and ring closure, and may contain polyhydroxyamide or the like.
• Polyimide has a structural unit represented by the general formula (1)
• polyimide precursors and polybenzoxazole precursors have a structural unit represented by the following general formula (2)
• polybenzoxazole has the general formula ( 3) has the structural unit represented by. Two or more of these may be contained, or a structural unit represented by general formula (1), a structural unit represented by general formula (2), and a structural unit represented by general formula (3) may be copolymerized. It may also contain a resin.
• V represents a tetravalent to decavalent organic group having 4 to 40 carbon atoms
• W represents a divalent to octavalent organic group having 4 to 40 carbon atoms
• a and b each represent an integer from 0 to 6.
• R 1 and R 2 represent a group selected from the group consisting of a hydroxyl group, a carboxy group, a sulfonic acid group, and a thiol group, and a plurality of R 1 and R 2 may be the same or different.
• X and Y each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms.
• R 3 and R 4 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms.
• c and d each represent an integer of 0 to 4, and e and f each represent an integer of 0 to 2.
• T and U each independently represent a divalent to octavalent organic group having 4 to 40 carbon atoms.
• X in the general formula (2) in the case of a polybenzoxazole precursor, has an aromatic group, d>0, and a hydroxyl group at the ortho position of the aromatic amide group. It has a structure that forms a benzoxazole ring by dehydration and ring closure.
• the repeating number n of the structural unit represented by general formula (1), general formula (2) or general formula (3) in the resin (A) is preferably 5 to 100,000, 10 to 100, More preferably, it is 000.
• the resin may have other structural units in addition to the structural units represented by general formula (1), general formula (2), or general formula (3).
• other structural units include, but are not limited to, cardo structures and siloxane structures.
• the structural unit represented by general formula (1) or general formula (2) it is preferable to use the structural unit represented by general formula (1) or general formula (2) as the main structural unit.
• the main structural unit refers to having 50 mol% or more of structural units represented by general formula (1), general formula (2), or general formula (3) out of the total number of structural units, and 70 mol% or more. It is more preferable to have.
• V-(R 1 ) a , (OH) c -X-(COOR 3 ) e in the above general formula (2), and T in the above general formula (3) are acid residues. represents a group.
• V is a tetravalent to decavalent organic group having 4 to 40 carbon atoms, and preferably an organic group having 4 to 40 carbon atoms containing an aromatic ring or a cycloaliphatic group.
• X and T are divalent to octavalent organic groups having 4 to 40 carbon atoms, and preferably organic groups having 4 to 40 carbon atoms containing an aromatic ring or an aliphatic group.
• acid components constituting acid residues include terephthalic acid, isophthalic acid, diphenyl ether dicarboxylic acid, bis(carboxyphenyl)hexafluoropropane, biphenyl dicarboxylic acid, benzophenone dicarboxylic acid, triphenyl dicarboxylic acid, and suberin.
• tetracarboxylic acids include pyromellitic acid and 3,3',4,4'-biphenyltetracarboxylic acid.
• Examples include, but are not limited to, aromatic tetracarboxylic acids of the structure, butanetetracarboxylic acid, cyclobutanetetracarboxylic acid, 1,2,3,4-cyclopentanetetracarboxylic acid, and the like. Two or more types of these may be used.
• R 17 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 .
• R 18 and R 19 represent a hydrogen atom or a hydroxyl group.
• acids can be used as they are, or as acid anhydrides, halides, or active esters.
• W-(R 2 ) b in the above general formula (1), (OH) d -Y-(COOR 4 ) f in the above general formula (2), and U in the above general formula (3) are the residues of diamines. represents a group.
• W, Y and U are divalent to octavalent organic groups having 4 to 40 carbon atoms, and preferably organic groups having 4 to 40 carbon atoms and containing an aromatic ring or a cycloaliphatic group.
• diamines constituting diamine residues include bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, and bis(3-amino-4-hydroxyphenyl).
• R 20 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 .
• R 21 to R 24 each independently represent a hydrogen atom or a hydroxyl group.
• At least one diamine having the structure shown below from the viewpoint of improving alkali developability and the transmittance of the resin (A) and its cured film.
• R 20 represents an oxygen atom, C(CF 3 ) 2 or C(CH 3 ) 2 .
• R 21 to R 22 each independently represent a hydrogen atom or a hydroxyl group.
• diamines can be used as diamines, diisocyanate compounds obtained by reacting diamines with phosgene, and trimethylsilylated diamines.
• the resin preferably contains a group selected from an alkylene group and an alkylene ether group. These groups may contain aliphatic rings. As the group selected from alkylene groups and alkylene ether groups, groups represented by general formula (4) are particularly preferred.
• R 5 to R 8 each independently represent an alkylene group having 1 to 6 carbon atoms.
• R 9 to R 16 each independently represent a hydrogen atom, a fluorine atom, or an alkyl group having 1 to 6 carbon atoms.
• the structures expressed within the parentheses are different.
• g, h, and i each independently represent an integer from 0 to 35, and g+h+i>0.
• Examples of the group represented by general formula (4) include ethylene oxide group, propylene oxide group, and butylene oxide group, and may be linear, branched, or cyclic.
• the resin preferably contains a group selected from the above-mentioned alkylene group and alkylene ether group in W in the general formula (1) or Y in the general formula (2).
• a group selected from the above-mentioned alkylene group and alkylene ether group in W in the general formula (1) or Y in the general formula (2) it is possible to improve the mechanical properties, especially the elongation, of the (A) resin and its cured film, and also to improve the light transmittance at 450 nm before and after curing, and to heat the cured film of the resin composition at a low temperature.
• High chemical resistance, high adhesion to substrate metals, and resistance to constant temperature and humidity testing (HAST) can be obtained by promoting ring closure during processing.
• diamines containing groups selected from alkylene groups and alkylene ether groups include ethylenediamine, 1,3-diaminopropane, 2-methyl-1,3-propanediamine, 1,4-diaminobutane, 1, 5-diaminopentane, 2-methyl-1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane, 1,12-diaminododecane, 1,2-cyclohexanediamine, 1,3-cyclohexanediamine, 1,4-cyclohexanediamine, 1,2-bis(aminomethyl)cyclohexane, 1,3- Bis(aminomethyl)cyclohexane, 1,4-bis(aminomethyl)cycl
• the diamine residue containing a group selected from an alkylene group and an alkylene ether group is preferably contained in an amount of 5 mol% or more, more preferably 10 mol% or more, of the total diamine residues. Moreover, it is preferably contained in 40 mol% or less, more preferably 30 mol% or less in all diamine residues.
• it improves developability with an alkaline developer, improves the mechanical properties of the (A) resin and its cured film, especially the elongation, and further improves the light transmittance at 450 nm after curing.
• high chemical resistance, high adhesion to metal surfaces, and resistance to constant temperature and humidity testing (HAST) can be obtained by promoting ring closure in the cured film of the resin composition during low temperature heat treatment.
• Diamine residues having an aliphatic polysiloxane structure may be copolymerized within a range that does not reduce heat resistance.
• adhesion to the substrate can be improved.
• a diamine component bis(3-aminopropyl)tetramethyldisiloxane, bis(p-aminophenyl)octamethylpentasiloxane, etc. are copolymerized in an amount of 1 to 15 mol% based on the total diamine residues. can be mentioned. Copolymerization within this range is preferred from the viewpoint of improving adhesion to substrates such as silicon wafers and from the viewpoint of not reducing solubility in alkaline solutions.
• a resin having an acidic group at the end of the main chain can be obtained by sealing the end of the resin with a monoamine, acid anhydride, acid chloride, or monocarboxylic acid having an acidic group.
• a monoamine, acid anhydride, acid chloride, and monocarboxylic acid having an acidic group known ones may be used, or a plurality of them may be used.
• the content of the terminal capping agent such as the monoamine, acid anhydride, acid chloride, monocarboxylic acid, etc. is 2 to 25 mol% based on the total 100 mol% of the acid component and amine component that constitute the resin (A). is preferred.
• the resin preferably has a weight average molecular weight of 10,000 or more and 100,000 or less. If the weight average molecular weight is 10,000 or more, the mechanical properties of the cured film after curing can be improved. More preferably, the weight average molecular weight is 20,000 or more. On the other hand, if the weight average molecular weight is 100,000 or less, the developability with various developers can be improved, and if the weight average molecular weight is 50,000 or less, the developability with alkaline solutions can be improved. It is preferable because it can be done.
• the weight average molecular weight (Mw) can be confirmed using GPC (gel permeation chromatography). For example, it can be determined by measuring the developing solvent as N-methyl-2-pyrrolidone (hereinafter sometimes abbreviated as NMP) and converting it into polystyrene.
• NMP N-methyl-2-pyrrolidone
• the content of the resin (A) is preferably 3 to 55% by mass, more preferably 5 to 40% by mass, based on 100% by mass of all components including the solvent. By setting it within the above range, it is possible to obtain an appropriate viscosity for spin coating or slit coating.
• phenol resins polymers containing radically polymerizable monomers having alkali-soluble groups as monomer units, such as polyhydroxystyrene, acrylics, siloxane polymers, cyclic olefin polymers, and cardo resins may also be used. These known resins may be used alone, or a plurality of resins may be used in combination.
• the phenol resin is preferably a wholly aromatic phenol resin consisting of a phenol compound and an aromatic aldehyde compound.
• the resin composition containing (A) resin preferably contains (B) a photosensitizer (hereinafter sometimes referred to as component (B)).
• the resin composition containing the resin (A) further contains the photosensitizer (B), since this imparts photosensitivity to the resin composition and allows formation of a fine opening pattern.
• Photosensitizer is a compound whose chemical structure changes in response to ultraviolet rays, and includes, for example, a photoacid generator, a photobase generator, a photopolymerization initiator, and the like.
• a photoacid generator is used as component (B)
• acid is generated in the light-irradiated part of the photosensitive resin composition, and the solubility of the light-irradiated part in an alkaline developer increases, so that the light-irradiated part dissolves.
• a positive pattern can be obtained.
• the cured film obtained by curing the resin composition containing the resin (A) has a light transmittance of 0.1% or more and 95% or less at a wavelength of 450 nm at a thickness standard of 1 ⁇ m.
• the cured film has the above-mentioned high wiring concealment property, thereby suppressing the glare of the wiring, making it difficult to see from the outside, and improving the design.
• the light transmittance is less than 0.1%, there is a concern that problems such as a decrease in sensitivity and resolution of the resin film before curing may occur.
• the light transmittance exceeds 95% the wiring concealment property is reduced, the suppression of glare of the wiring is insufficient, and there is a concern that problems such as being visible from the outside may occur.
• the photosensitizer In order to obtain such characteristics, (B) the photosensitizer must be one that has low transmittance of light at a wavelength of 450 nm and does not undergo structural changes due to heat treatment, or (B) the photosensitizer and ( A) Low light transmittance of reaction products with resins, thermal crosslinking agents, etc.; (B) Low light transmittance of photosensitive agent decomposition products themselves or reaction products derived from degradable products. is preferred.
• the resin composition containing the resin (A) preferably has positive photosensitivity. Further, the resin composition containing the resin (A) and the photosensitizer (B) preferably has positive photosensitivity.
• photoacid generators are preferred from the viewpoints of high wiring concealment, high sensitivity, and microprocessability.
• the photoacid generator include quinonediazide compounds, sulfonium salts, phosphonium salts, diazonium salts, and iodonium salts.
• a sensitizer and the like can be included if necessary.
• quinonediazide compound a compound in which the sulfonic acid of naphthoquinonediazide is bonded with an ester to a compound having a phenolic hydroxyl group is preferable.
• the compound having a phenolic hydroxyl group used here known compounds may be used, and preferred examples include compounds in which 4-naphthoquinonediazide sulfonic acid or 5-naphthoquinonediazide sulfonic acid is introduced through an ester bond.
• other compounds can also be used.
• the total functional groups of the compound having a phenolic hydroxyl group be substituted with quinonediazide.
• a quinonediazide compound substituted by 50 mol% or more the affinity of the quinonediazide compound for an aqueous alkaline solution is reduced.
• the solubility of the resin composition in the unexposed area in an alkaline aqueous solution is greatly reduced.
• the quinonediazide sulfonyl group is changed to indenecarboxylic acid by exposure, and a high dissolution rate of the photosensitive resin composition in the exposed area in the alkaline aqueous solution can be obtained. That is, as a result, the dissolution rate ratio between the exposed area and the unexposed area of the composition is increased, and a pattern with high resolution can be obtained.
• the resin composition has positive photosensitivity that is sensitive to the I-line (365 nm), H-line (405 nm), G-line (436 nm) of a general mercury lamp, and broadband light including them. can get things.
• the photosensitive agent (B) may be contained alone or in combination of two or more types, and a highly sensitive resin composition can be obtained.
• Examples of the quinonediazide include a 5-naphthoquinonediazide sulfonyl group, a 4-naphthoquinonediazide sulfonyl group, and those containing a 4-naphthoquinonediazide sulfonyl group and a 5-naphthoquinonediazide sulfonyl group in the same molecule.
• Examples of the naphthoquinone diazide sulfonyl ester compound include 5-naphthoquinone diazide sulfonyl ester compound (B-1) and 4-naphthoquinone diazide sulfonyl ester compound (B-2), and in the present invention, the compound (B-2) is included. It is preferable. Compound (B-2) has high absorption in the i-line region of a mercury lamp and is suitable for i-line exposure. In addition, the light transmittance at 450 nm can be lowered by coloring by decomposing the compound (B-2) or reacting with the resin (A) during curing, so the light transmittance after heat treatment can be reduced. preferred.
• the photosensitizer is the compound (B-2) alone, or is a mixture with other components
• the compound (B-2) is contained in an amount of 46% by mass or more.
• the content ratio of (B-2) compound is the total amount of photosensitizer (B-1) compound + (B-2) compound.
• it is preferably 46% by mass or more and 100% by mass or less.
• a quinonediazide compound can be synthesized by a known method by an esterification reaction between a compound having a phenolic hydroxyl group and a quinonediazide sulfonic acid compound. By using a quinonediazide compound, resolution, sensitivity, and residual film rate are further improved.
• the molecular weight of the photosensitizer is preferably 300 or more, more preferably 350 or more, and preferably 3,000 or less, more preferably 1,500 or less.
• sulfonium salts are preferred because they appropriately stabilize acid components generated by exposure.
• phosphonium salts are preferred.
• diazonium salts are preferred.
• the content of the (B) photosensitizer is preferably 0.1 parts by mass or more and 100 parts by mass or less based on 100 parts by mass of the (A) resin. (B) If the content of the photosensitizer is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment. .
• the content of the (B) photosensitizer is more preferably 1 part by mass or more, and even more preferably 3 parts by mass or more, based on 100 parts by mass of component (A). Moreover, 100 parts by mass or less is more preferable, and even more preferably 80 parts by weight or less. When the amount is 1 part by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.
• the content of the photosensitizer (B) is more preferably 0.1 parts by mass or more with respect to 100 parts by mass of the (A) resin; It is more preferably 1 part by mass or more, particularly preferably 3 parts by mass or more. Further, it is more preferably 100 parts by mass or less, even more preferably 80 parts by mass or less, and particularly preferably 50 parts by mass or less. If the amount is 0.1 parts by mass or more and 100 parts by mass or less, photosensitivity can be imparted while maintaining the heat resistance, chemical resistance, and mechanical properties of the film after heat treatment.
• photobase generator When a photobase generator is contained as the photosensitizer, specific examples of the photobase generator include amide compounds, ammonium salts, and the like.
• Examples of the amide compound include 2-nitrophenylmethyl-4-methacryloyloxypiperidine-1-carboxylate, 9-anthrylmethyl-N,N-dimethylcarbamate, 1-(anthraquinone-2yl)ethylimidazolecarboxylate, (E)-1-[3-(2-hydroxyphenyl)-2-propenoyl]piperidine and the like.
• ammonium salts include 1,2-diisopropyl-3-(bisdimethylamino)methylene)guanidinium 2-(3-benzoylphenyl)propionate, (Z)- ⁇ [bis(dimethylamino)methylidene]amino ⁇ -N -cyclohexylamino)metaniminium tetrakis(3-fluorophenyl)borate, 1,2-dicyclohexyl-4,4,5,5-tetramethylbiguanidium n-butyltriphenylborate, and the like.
• the content of the photosensitizer (B) in the resin composition is preferably 0.1 parts by mass or more, and 0.1 parts by mass or more based on 100 parts by mass of (A) resin.
• the amount is more preferably .5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more.
• the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less.
• resolution after development can be improved.
• examples of the photopolymerization initiator include a benzyl ketal photopolymerization initiator, an ⁇ -hydroxyketone photopolymerization initiator, and an ⁇ -aminoketone photopolymerization initiator.
• acylphosphine oxide photopolymerization initiator acylphosphine oxide photopolymerization initiator, oxime ester photopolymerization initiator, acridine photopolymerization initiator, benzophenone photopolymerization initiator, acetophenone photopolymerization initiator, aromatic ketoester photopolymerization initiator or benzoin Acid ester-based photopolymerization initiators and titanocene-based photopolymerization initiators are preferred, and a known one or a plurality of them may be used.
• ⁇ -hydroxyketone photopolymerization initiators from the viewpoint of improving sensitivity during exposure, ⁇ -hydroxyketone photopolymerization initiators, ⁇ -aminoketone photopolymerization initiators, acylphosphine oxide photopolymerization initiators, oxime ester photopolymerization initiators, acridine More preferred are photopolymerization initiators based on benzophenone or ⁇ -aminoketone, and still more preferred are photopolymerization initiators based on acylphosphine oxide, and photopolymerization initiators based on oxime ester.
• the content of the photosensitizer (B) in the resin composition is preferably 0.1 parts by mass or more, and 0.1 parts by mass or more with respect to 100 parts by mass of (A) resin.
• the amount is more preferably .5 parts by mass or more, even more preferably 0.7 parts by mass or more, and particularly preferably 1 part by mass or more.
• the content is preferably 25 parts by mass or less, more preferably 20 parts by mass or less, even more preferably 17 parts by mass or less, and particularly preferably 15 parts by mass or less.
• resolution after development can be improved.
• the resin composition containing the resin (A) further contains a colorant (C), and the colorant (C) absorbs in a wavelength range of (C-1) from 400 nm to 490 nm. It is preferable to contain a colorant having a maximum (hereinafter sometimes referred to as component (C) or component (C-1)).
• Colorants include thermochromic compounds, dyes, pigments, and the like. Among these, from the viewpoint of heat resistance, sensitivity, and resolution, it is preferable to use at least one of dyes and organic pigments, and dyes are more preferable.
• component (C-1) By containing component (C-1) in component (C), the amount of light that absorbs and transmits light in the wavelength range of 400 nm or more and 490 nm or less is suppressed, and the wavelength at a thickness standard of 1 ⁇ m in the cured film according to the present invention
• the transmittance of 450 nm light can be set to 0.1% or more and 95% or less, and the cured film has high wiring hiding properties, which suppresses the glare of the wiring, makes it difficult to see from the outside, and improves the design. You can increase your sexuality.
• component (C-1) is a colorant having an absorption maximum in a wavelength range of preferably 420 nm or more and 480 nm or less, more preferably a wavelength range of 430 nm or more and 470 nm or less.
• the component (C-1) has the property of transmitting light having a wavelength of 350 nm to 390 nm, which is a part of the exposure wavelength, it is possible to achieve both sensitivity to the exposure wavelength and resolution.
• the transmittance of light with a wavelength of 350 nm to 390 nm is preferably 40% or more, more preferably 70% or more.
• the component (C-1) may contain at least one type, for example, a method using one type of thermochromic compound, one type of dye or organic pigment, or a method using two or more types of thermochromic compound, dye or organic pigment. Examples include a method of using a mixture of two or more thermochromic compounds, a method of using a combination of one or more thermochromic compounds, one or more dyes, and one or more organic pigments.
• Examples of the component (C-1) include yellow dyes and orange dyes.
• Examples of the types of dyes include oil-soluble dyes, disperse dyes, reactive dyes, acid dyes, and direct dyes.
• Examples of the skeleton structure of the dye used as the component (C-1) include, but are not limited to, anthraquinone, methine, quinoline, perinone, and the like. Further, each of these dyes may be used alone or as a metal-containing complex salt system.
• the pigment used as component (C-1) is preferably a pigment with high heat resistance from the viewpoint of discoloration during curing.Specific examples are shown by color index (CI) numbers. Examples of yellow pigments include Pigment Yellow 83, 117, 129, 138, 139, 150, 180 and the like. Examples of orange pigments include Pigment Orange 38, 43, 64, 71, and 72.
• the content of component (C-1) is preferably 0.1 to 100 parts by weight, more preferably 0.2 to 50 parts by weight, based on 100 parts by weight of the resin (A). By setting the content of component (C-1) to 0.1 parts by mass or more, light of the corresponding wavelength can be absorbed. Further, by setting the amount to 100 parts by mass or less, it is possible to achieve both light transmittance, sensitivity, and resolution.
• the resin composition containing the (A) resin further contains (C) a colorant, and the (C) colorant has an absorption maximum in a wavelength range of (C-2) exceeding 490 nm and 580 nm or less. It is preferable that the coloring agent contains a colorant (hereinafter sometimes referred to as component (C-2)) having the following properties.
• the resin composition containing the (A) resin further contains (C) a colorant, and the (C) colorant has an absorption maximum in a wavelength range of (C-3) exceeding 580 nm and 800 nm or less.
• the coloring agent contains a coloring agent (hereinafter sometimes referred to as component (C-3)) having the following properties.
• the component (C), together with the component (C-1), further includes (C-2) a colorant having an absorption maximum in a wavelength range exceeding 490 nm and 580 nm or less, and (C-3) a wavelength It is preferable to contain a colorant having an absorption maximum in a range of more than 580 nm and less than 800 nm.
• the blackening reduces external light reflection and improves the contrast.
• Components (C-2) and (C-3) are preferred because they can improve visibility, and like component (C-1), they have high solvent solubility, heat resistance, and high transmittance for wavelengths of 350 nm to 390 nm. It is preferable to use at least one of dyes and organic pigments, and dyes are more preferable. This is preferable because in addition to blackening by mixing component (C-1), component (C-2), and component (C-3), high sensitivity and high resolution can be achieved in the resin film.
• Examples of the skeleton structure of dyes that can be preferably used as components (C-2) and (C-3) include, but are not limited to, triphenylmethane-based dyes and anthraquinone-based dyes. Further, each of these dyes may be used alone or as a metal-containing complex salt system.
• organic pigments that can be preferably used as component (C-2) are shown by color index (CI) numbers.
• red pigments include Pigment Red 48:1, 122, 168, 177, 202, 206, 207, 209, 224, 242, 254, etc.
• purple pigments that can be preferably used as component (C-2) include Pigment Violet 19, 23, 29, 32, 33, 36, 37, and 38.
• blue pigments that can be preferably used as component (C-3) include Pigment Blue 15 (15:3, 15:4, 15:6, etc.), 21, 22, 60, 64, and the like.
• green pigments that can be preferably used as the C-3 component include Pigment Green 7, 10, 36, 47, and 58. Pigments other than these can also be used. Also, as above, if necessary. You may also use one that has been surface-treated.
• the content of component (C-2) and component (C-3) is preferably 0.1 to 100 parts by mass, more preferably 0.2 to 50 parts by mass, based on 100 parts by mass of resin (A). .
• the content of component (C-1) is preferably 0.1 to 100 parts by mass, more preferably 0.2 to 50 parts by mass, based on 100 parts by mass of resin (A). .
• the content of component (C-1) is preferably 0.1 to 100 parts by mass or more, light of the corresponding wavelength can be absorbed. Further, by setting the amount to 100 parts by mass or less, it is possible to achieve both light transmittance, sensitivity, and resolution.
• the dyes used as components (C-1), (C-2), and (C-3) are soluble in organic solvents that dissolve (A) resin in terms of storage stability and discoloration during curing.
• a dye that is large in color, compatible with the resin, and has high heat resistance is preferable.
• the organic solvents mentioned here include, for example, N-methyl-2-pyrrolidone, ⁇ -butyrolactone, ⁇ -valerolactone, ⁇ -valerolactone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, 1, Polar aprotic solvents such as 3-dimethyl-2-imidazolidinone, N,N'-dimethylpropylene urea, N,N-dimethylisobutyric acid amide, methoxy-N,N-dimethylpropionamide, tetrahydrofuran, dioxane, propylene Ethers such as glycol monomethyl ether and propylene glycol monoethyl ether, ketones such as acetone, methyl ethyl ketone and diisobutyl ketone, ethyl acetate, butyl acetate, isobutyl acetate, propyl acetate, propylene glyco
• the organic pigment may be subjected to surface treatment such as rosin treatment, acidic group treatment, basic group treatment, etc., if necessary. Moreover, it can be used together with a dispersant depending on the case. Examples of the dispersant include cationic, anionic, nonionic, amphoteric, silicone, and fluorine-based surfactants.
• the resin composition containing the resin (A) further contains a (C) colorant, and the (C) colorant is a (C-4) black colorant (hereinafter referred to as (C-4) component). ) is preferable.
• the transmittance of light at a wavelength of 450 nm at a thickness standard of 1 ⁇ m in the cured film according to the present invention can be 0.1% or more and 95% or less.
• the cured film has high wiring hiding properties, which suppresses the glare of the wiring, making it difficult to see from the outside, and improving design.Furthermore, by reducing reflection of external light and improving contrast, visibility is improved. can be increased.
• the component (C-4) may contain at least one type, for example, a method using one type of inorganic black pigment, an organic black pigment, or a black dye, or a method using two or more types of inorganic black pigment, organic black pigment, or black dye. Examples include a method of using in combination.
• inorganic black pigment examples include, but are not limited to, inorganic black pigments having titanium atoms, inorganic black pigments having zirconium atoms, amorphous carbon black, and carbon black.
• amorphous carbon black herein refers to non-crystalline carbon black particles.
• carbon black simply refers to crystalline carbon black particles that are generally well known for use as colorants.
• Inorganic black pigments having titanium atoms include titanium nitride represented by TiN, titanium oxynitride represented by TiNxOy (0 ⁇ x ⁇ 2.0, 0.1 ⁇ y ⁇ 2.0), and titanium oxynitride represented by TiC. It means any one or more of titanium carbide, a solid solution of titanium nitride and titanium carbide, a composite oxide or composite nitride of titanium and a metal other than titanium. Among them, titanium nitride and titanium oxynitride are preferred because of their high light-shielding properties in the visible light region and high exposure light transmittance in the exposure process, and titanium nitride is more preferred because of its low dielectric constant. preferable.
• titanium nitride synthesized by a thermal plasma method is preferable because it is easy to obtain particles with a small primary particle size and a sharp particle size distribution.
• the content of titanium dioxide represented by TiO 2 which is an inorganic white pigment, as an impurity is preferably as small as possible, and it is more preferably that it is not contained. .
• Inorganic black pigments having zirconium atoms include zirconium nitride represented by Zr3N4 , zirconium nitride represented by ZrN, and ZrOxNy (0 ⁇ x ⁇ 2.0, 0.1 ⁇ y ⁇ 2.0). It means any one or more of the expressed zirconium oxynitride, a composite oxide or a composite nitride of zirconium and a metal other than zirconium. Among these, zirconium nitride represented by ZrN is preferred because it has high exposure light transmittance in the exposure process and low dielectric constant.
• Examples of the manufacturing method include gas phase reactions, and among them, zirconium nitride synthesized by a thermal plasma method is preferred because it is easy to obtain particles with a small primary particle size and a sharp particle size distribution.
• the content of zirconium dioxide represented by ZrO 2 which is an inorganic white pigment, as an impurity is preferably as small as possible, and it is more preferable that it is not contained. .
• the inorganic black pigment having a titanium atom and the inorganic black pigment having a zirconium atom may be subjected to surface treatment to modify the pigment surface, if necessary.
• Surface treatment methods include, for example, introducing an organic group containing a silicon atom as a surface modification group by treatment with a silane coupling agent, or treating a part of the pigment surface with a coating material such as silica, metal oxide, and/or organic resin.
• a method of covering the entire surface may be used, and a combination of multiple surface treatments may be used. By performing these surface treatments, the long-term storage stability of the resin composition of the present invention may be improved.
• the inorganic black pigment having a zirconium atom and the inorganic black pigment having a titanium atom may constitute one primary particle as a solid solution containing both.
• Amorphous carbon black means non-crystalline carbon black consisting of a diamond structure (SP 3 structure) and a graphite structure (SP 2 structure). It corresponds to carbon classified as so-called diamond-like carbon (DLC).
• Amorphous carbon black has higher insulation properties than carbon black having crystallinity, which will be described later, and can be suitably used as a coloring material without surface treatment.
• the structure of amorphous carbon black contains a large amount of SP 3 structure, the shielding property of visible light and near infrared rays is low, but the insulation property can be improved.
• the insulation property is low, but the visible light and near-infrared ray blocking properties can be improved.
• the properties inherent to the pigment can be controlled by controlling the synthesis conditions.
• amorphous carbon black in which the content of the SP 3 structure is 30 to 70 atom % based on the total of the SP 3 structure and the SP 2 structure can be preferably used in the photosensitive composition of the present invention. Further, the ratio of SP 3 structure and SP 2 structure can be analyzed by X-ray photoelectron spectroscopy.
• the total amount of the above-mentioned inorganic black pigment having a titanium atom, inorganic black pigment having a zirconia atom, and amorphous carbon is 5.5% in the total solid content of the photosensitive composition in the present invention in order to further improve the near-infrared light shielding property. It is preferably 0% by mass or more. Further, in order to avoid an excessive increase in dielectric constant, it is preferably 35.0% by mass or less based on the total solid content in the photosensitive composition.
• the total solid content herein means the components of the photosensitive composition excluding the solvent content.
• Carbon blacks include furnace black, thermal black, channel black, acetylene black, Ketjen black, and lamp black, which are classified based on their manufacturing method. Furnace black produced by the furnace method is preferred because it is easy to control the chemical reaction industrially. Among these, from the viewpoint of improving insulation, it is preferable that the structure length of carbon black, in which particles are strongly connected in a beaded manner, is shorter. is more preferable.
• surface-modified carbon black commercially available products may be used, such as "TPK-1227", which is a carbon black whose surface is modified with acidic functional groups containing sulfur atoms, and carbon black whose pigment surface is coated with silica. Examples include “TPX-1409” (both manufactured by CABOT), which is a carbon black manufactured by CABOT.
• the total amount of carbon black is preferably 5.0% by mass or more based on the total solid content of the resin composition in the present invention in order to further improve near-infrared light shielding properties. Further, in order to avoid an excessive increase in dielectric constant, it is preferably 10.0% by mass or less based on the total solid content in the resin composition.
• a mixture of multiple types may be used so that the cured film has desired optical properties. For example, by adjusting the color using zirconium nitride, which has a strong purplish black color, and amorphous carbon, which has a strong yellowish black color, the reflected color of the cured film can be made into a neutral black with low saturation. be able to.
• the average primary particle diameter of the inorganic black pigment is preferably 5 nm or more, more preferably 10 nm or more, from the viewpoint of improving dispersibility and storage stability after dispersion.
• the thickness is preferably 150 nm or less, more preferably 100 nm or less.
• the average primary particle diameter herein means the number average value of the primary particle diameter calculated by a particle size measurement method using an image analysis type particle size distribution measuring device. A transmission electron microscope (TEM) can be used to take the image, and the average primary particle diameter can be calculated at a magnification of 50,000 times. (C-4) When the component is not spherical, the average value of its major axis and minor axis is the primary particle diameter.
• Image analysis type particle size distribution software Mac-View manufactured by Mountech is used for image analysis. If it is necessary to reduce the average primary particle diameter or to sharpen the particle size distribution by grinding coarse particles, dry grinding may be performed. For example, a hammer mill, a ball mill, etc. can be used for the dry grinding process. Furthermore, if there is a limit to the dry pulverization treatment due to reasons such as excessively high hardness of the pigment, it is desirable to remove coarse particles by classification treatment without crushing.
• the organic black pigment refers to benzodifuranone black pigments, perylene black pigments, azo black pigments, and isomers thereof.
• the term "isomer" as used herein also includes tautomers.
• the isomer may be contained as a mixture of a plurality of pigment powders, or may be contained as a mixed crystal in constituting one primary particle.
• organic pigments have extremely poor light-shielding properties in the near-infrared region, but have the advantage of having a low dielectric constant. Therefore, in the resin composition containing the resin (A) in the present invention, an increase in the dielectric constant can be avoided. However, it can be effectively used as a component for imparting light-shielding properties only in the visible light region.
• benzodifuranone black pigment examples include, but are not limited to, "Irgaphor (registered trademark)" Black S0100 manufactured by BASF. Further, the dispersibility can be improved by partially mixing a benzodifuranone black pigment having a substituent such as SO 3 H, SO 3 - or COOH as a dispersion aid and performing a wet dispersion treatment.
• perylene black pigment when expressed by color index (CI) number, it is C. I.
• examples include Pigment Black 31 and 32, such as FK4280 manufactured by BASF, but are not limited thereto.
• the resin composition containing the resin (A) in the present invention may further contain a dispersant.
• a dispersant refers to an agent that has both a pigment-affinity group that has a chemical bonding or adsorption effect on the pigment surface and a polymer chain or group that has solvent affinity.
• hydrogen bonding and Van der Waals forces are involved in the action mechanism of the dispersant in a complex manner.
• finer pigments are promoted by increasing the wettability of the organic pigment surface to the dispersion medium and increasing the steric repulsion effect and/or electrostatic repulsion effect between organic pigments due to polymer chains. , and has the effect of enhancing dispersion stability. Flexibility can be further improved by promoting fineness and improving dispersion stability.
• a dispersant having a basic adsorption group As the dispersant, a dispersant having a basic adsorption group, a dispersant having an acidic group, and a nonionic dispersant can be preferably used.
• the dispersant having a basic adsorption group include DisperBYK-142, 145, 164, 167, 182, 187, 2001, 2008, 2009, 2010, 2013, 2020, 2025, 9076, 9077, BYK-LP N6919, BYK-LP N21116, BYK-JET9152 (all manufactured by BYK Chemie), “Solsperse (registered trademark)” 9000, 11200, 13650, 20000, 24000, 24000SC, 24000GR, 32000, 32500, 32550, 3260 00, 33000, 34750 , 35100, 35200, 37500, 39000, 56000, 76500 (all manufactured by Lubrizol), and Efka-PX4310, 4320, 4710 (all
• dispersant having an acidic group examples include “Tego dispers (registered trademark)” 655 (manufactured by Evonik), DisperBYK-102, 118, 174, and 2096 (all manufactured by BYK Chemie), and nonionic
• system dispersant examples include “SOLSPERSE (registered trademark)” 54000 (manufactured by Lubrizol) and “Tego dispers (registered trademark)” 650, 652, and 740W (all manufactured by Evonik). These dispersants may be used alone or in combination as appropriate, taking into consideration the surface characteristics and average primary particle size specific to the pigment, so as to obtain the average dispersed particle size described below.
• the content of the dispersant is preferably 10 parts by mass or more based on 100 parts by mass of the total amount of pigment, in order to achieve sufficient deagglomeration in the wet media dispersion treatment described below and to suppress re-agglomeration after the dispersion treatment. More preferably 20 parts by mass or more.
• the content is preferably 100 parts by mass or less, more preferably 60 parts by mass or less.
• the resin composition containing the resin may include, as necessary, other components such as a thermal crosslinking agent, a radically polymerizable compound, an antioxidant, a solvent, a compound having a phenolic hydroxyl group, an adhesion improver, an adhesion improver, It may also contain a surfactant.
• a resin composition can be obtained by mixing and dissolving an adhesion improver, a surfactant, etc.
• Examples of the dissolution method include known methods such as heating and stirring.
• the viscosity of the resin composition is preferably 2 to 5,000 mPa ⁇ s.
• the solid content concentration By adjusting the solid content concentration so that the viscosity is 2 mPa ⁇ s or more, it becomes easy to obtain a desired film thickness.
• the viscosity is 5,000 mPa ⁇ s or less, it becomes easy to obtain a highly uniform resin film.
• a resin composition having such a viscosity can be easily obtained, for example, by adjusting the solid content concentration to 5 to 60% by mass.
• the solid content concentration refers to components other than the solvent.
• the obtained resin composition is preferably filtered using a filter to remove dust and particles.
• Materials for the filter include polypropylene (PP), polyethylene (PE), nylon (NY), polytetrafluoroethylene (PTFE), and polyethylene and nylon are preferred.
• the resin sheet refers to a sheet formed on a base material using the above resin composition. Specifically, it refers to a resin sheet obtained by applying a resin composition to a base material and drying it.
• a film such as polyethylene terephthalate (PET) can be used as the base material to which the resin composition is applied.
• PET polyethylene terephthalate
• a resin sheet attached to a substrate such as a silicon wafer
• a base material whose surface is coated with a release agent such as silicone resin. This is preferable because the resin sheet and the base material can be peeled off.
• the method for manufacturing a display device of the present invention is a method for manufacturing a display device having a light emitting element each having at least wiring, a cured film, and a plurality of electrodes on two different surfaces, wherein the light emitting element is arranged on a support substrate.
• the method includes a step (D6) of forming the cured film, and a step (D5) of forming the wiring on at least a portion of the surface of the cured film and the opening pattern of the cured film.
• FIG. 7 shows a cross-sectional view taken in a plane perpendicular to the support substrate, showing the manufacturing process of an example of a display device having a plurality of light emitting elements according to the present invention.
• a resin film refers to a film obtained by applying a resin composition containing (A) resin to a substrate or laminating a resin sheet and drying.
• resin compositions containing resin (A) those containing a solvent may be referred to as varnishes.
• a cured film refers to a resin film or a film obtained by curing a resin sheet.
• step (D1) is a step of arranging light emitting elements 2 each having electrodes 6 on two different surfaces on a support substrate 18.
• a glass substrate, a silicon substrate, a ceramic, a gallium arsenide, an organic circuit board, an inorganic circuit board, or a circuit component material arranged on these substrates can be used, but the support substrate is not limited to these.
• Temporary pasting material and wiring 4d may be arranged on the support substrate.
• a TFT array substrate may be used.
• the supporting substrate may be used as a counter substrate or a light emitting element driving substrate, or may be removed during the process, or another counter substrate or a light emitting element driving substrate may be placed after removal.
• FIG. 1 is a step of arranging light emitting elements 2 each having electrodes 6 on two different surfaces on a support substrate 18.
• the 7a shows an example in which a temporary bonding layer is formed on the support substrate 18 and wiring 4d is formed thereon.
• the electrode 6 and the wiring 4d may be connected through a bump, a conductive film, or the like, or may be directly connected. Further, the wiring 4d may be connected to the wiring 4 extending in the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2 through a through electrode or the like, or may be connected to the light emitting element driving board 7. .
• step (D2) as shown in FIG. 7b, a resin composition containing (A) resin or a resin formed from a resin composition containing (A) resin is applied onto the support substrate 18 and the light emitting element 2.
• This is a step of forming a resin film 19 by coating or laminating the sheet.
• a resin film may be formed by coating or laminating a resin sheet formed from a resin composition containing the resin composition or a resin composition containing the resin (A).
• coating methods include spin coating, slit coating, dip coating, spray coating, and printing.
• the thickness of the coating film varies depending on the coating method, solid content concentration of the composition, viscosity, etc., but the coating is usually done so that the film thickness after drying is 0.1 to 150 ⁇ m.
• the supporting substrate to which the resin composition containing resin (A) is coated may be pretreated with the adhesion improver described above.
• a solution in which 0.5 to 20% by mass of the adhesion improver is dissolved in a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, diethyl adipate, etc. is used.
• a solvent such as isopropanol, ethanol, methanol, water, tetrahydrofuran, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, diethyl adipate, etc.
• examples include methods of treating the surface of the substrate by spin coating, slit die coating, bar coating, dip coating, spray coating, vapor treatment, and the like. After treating the surface of the substrate, a vacuum drying
• the coating film of the resin composition containing the resin (A) is dried to obtain the resin film 19. Drying is preferably carried out using an oven, hot plate, infrared rays, etc. at a temperature of 50° C. to 140° C. for 1 minute to several hours.
• the resin sheet when using the resin sheet, if the resin sheet has a protective film, peel it off, place the resin sheet and support substrate facing each other, and bond them together by thermocompression bonding. Bonding by pressure bonding is sometimes referred to as laminating a resin sheet to a support substrate). Next, the resin sheet laminated to the support substrate is dried in the same manner as in the case of obtaining the resin film described above to form the resin film 19.
• the resin sheet can be obtained by applying a resin composition containing the resin (A) onto a support film made of polyethylene terephthalate or the like, which is a removable substrate, and drying the resin composition.
• Thermocompression bonding can be performed by heat press treatment, heat lamination treatment, heat vacuum lamination treatment, etc.
• the bonding temperature is preferably 40° C. or higher from the viewpoint of adhesion to the substrate and embeddability. Further, when the resin sheet is photosensitive, the bonding temperature is preferably 140° C. or lower in order to prevent the resin sheet from curing during bonding and reducing the resolution of pattern formation in the exposure and development steps.
• step (D3) is a step of forming a penetrating opening pattern 12 corresponding to the shape of the wiring 4 in the resin film 19 using a photolithography process, as shown in FIG. 7c.
• the light emitting elements can be arranged in high density.
• Actinic radiation is irradiated onto the photosensitive resin film through a mask having a desired pattern.
• Actinic radiation used for exposure includes ultraviolet rays, visible light, electron beams, and X-rays, but in the present invention, we use G-line (436 nm), H-line (405 nm), or I-line (365 nm), which are common exposure wavelengths. , is preferably used.
• a photoresist is formed after the resin film is formed, and then the above-mentioned actinic radiation is irradiated.
• the exposed photosensitive resin film 19 is developed.
• a developer tetramethylammonium, diethanolamine, diethylaminoethanol, sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, triethylamine, diethylamine, methylamine, dimethylamine, dimethylaminoethyl acetate, dimethylaminoethanol, dimethylaminoethyl
• alkaline compounds such as methacrylate, cyclohexylamine, ethylenediamine, and hexamethylenediamine are preferred.
• polar solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, N,N-dimethylacetamide, dimethyl sulfoxide, ⁇ -butyrolactone, and dimethylacrylamide, methanol, ethanol,
• alcohols such as isopropanol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, and ketones such as cyclopentanone, cyclohexanone, isobutyl ketone and methyl isobutyl ketone may be added.
• alcohols such as ethanol and isopropyl alcohol, esters such as ethyl lactate and propylene glycol monomethyl ether acetate, etc. may be added to water for rinsing.
• step (D6) by curing the resin film 19 shown in FIG. 7c, the cured film 3 has a transmittance of light at a wavelength of 450 nm of 0.1% or more and 95% or less at a thickness standard of 5 ⁇ m. This is the process of forming.
• the step (D6) is a step (D6) of forming a cured film 3 having a transmittance of light at a wavelength of 450 nm of 0.1% or more and 79% or less at a thickness standard of 5 ⁇ m by curing the resin film 19.
• D4) may be a step (D4) of forming a cured film 3 having a transmittance of light at a wavelength of 450 nm of 0.1% or more and 25% or less at a thickness standard of 1 ⁇ m by curing the resin film 19. D7) may be used.
• the cured film 3 is obtained by heating the resin film 19 to advance a ring-closing reaction and a thermal crosslinking reaction.
• the heat resistance and chemical resistance of the cured film 3 are improved by (A) crosslinking between resins or (B) with a photosensitive agent, a thermal crosslinking agent, or the like.
• This heat treatment may be performed by raising the temperature in stages or may be performed while raising the temperature continuously.
• the heat treatment is preferably carried out for 5 minutes to 5 hours.
• An example is a case in which heat treatment is performed at 110° C. for 30 minutes and then further heat treated at 230° C. for 60 minutes.
• the heat treatment conditions are preferably 140°C or higher and 400°C or lower.
• the heat treatment conditions are preferably 140°C or higher, more preferably 160°C or higher, in order to advance the thermal crosslinking reaction. Further, in order to provide an excellent cured film and improve the reliability of the display device, the heat treatment conditions are preferably 300°C or lower, more preferably 250°C or lower.
• the treatment may be performed in an air atmosphere, or in order to suppress the fading of the component (C), the treatment may be performed in an atmosphere with a low oxygen concentration.
• the oxygen concentration is preferably 1000 ppm or less, more preferably 300 ppm or less, even more preferably 100 ppm or less, and particularly preferably 50 ppm or less.
• the cured film obtained in this manner preferably has an opening pattern, and the angle of the inclined side in the cross section of the opening pattern is preferably 40° or more and 85° or less.
• the angle of the cross-sectional shape of the opening is 40° or more, a plurality of light emitting elements can be efficiently arranged, and high definition can be achieved.
• the angle of the cross-sectional shape of the opening is more preferably 50° or more.
• the angle of the cross-sectional shape of the opening is 85° or less, wiring defects such as short circuits in the wiring can be suppressed.
• the angle of the cross-sectional shape of the opening is more preferably 80° or less.
• FIG. 16 shows a cross-sectional view in a plane perpendicular to the support base showing the opening pattern of the cured film.
• the angle of the inclined side 26 of the opening pattern formed in the cured film 3 is 27. Note that the sloped side was set to be 1/2 in the thickness direction of the cured film 3, and the opening pattern at the position 29 and the opening pattern at the bottom were connected with a straight line.
• a barrier metal such as titanium is sputtered on the cured film 3, and a copper seed (seed layer) is further deposited on top of it by a sputtering method.
• step (D5) after forming a photoresist layer (not shown), a metal such as copper for electrical connection with at least one electrode 6 of the light emitting element 2 is formed.
• wiring 4 made of a conductive film or the like is formed on the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by plating, sputtering, processing of a photosensitive conductive paste, or the like. After that, unnecessary photoresist, seed layer, and barrier metal are removed.
• the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves the design. Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the method for manufacturing a display device of the present invention includes repeating the step (D2), the step (D3), the step (D6), and the step (D5) a plurality of times to form a cured film having the wiring in the cured film. It is preferable to have a step of forming a plurality of layers.
• the cured film 3 and the wiring 4 can be formed by repeating the same method again to form a cured film 3 consisting of two or more layers.
• a barrier metal 9 is formed in the opening pattern 12 of the cured film 3 by sputtering to form a bump 10. Note that the barrier metal 9 may or may not be included.
• the light emitting element drive substrate 7 having the drive elements 8 such as driver ICs is electrically connected via the bumps 10, the support substrate 18 is peeled off, and the counter substrate 5 is coated with an adhesive or the like.
• the wiring 4 may include an electrode.
• One or more drive elements 8 are used for one light emitting element 2, one unit of light emitting element 2 consisting of red, blue, and green, a plurality of light emitting elements 2, or a plurality of units of light emitting elements 2 according to function.
• one or more driving elements may be arranged near the light emitting element during the process shown in FIG. 7. In that case, the driving element is electrically connected to the light emitting element 2 via the light emitting element driving substrate 7, the wiring 4c, the wiring 4 extending in the cured film 3, and the like.
• the cured film hides the wiring, suppresses the glare of the wiring, makes it difficult to see from the outside, and improves the design. Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the method for manufacturing a display device of the present invention preferably includes a step (D8) of providing a partition wall having a thickness equal to or greater than the thickness of the light emitting element before the step (D1).
• FIG. 17a shows a step (D8) in which partition walls 15 having a thickness equal to or greater than the thickness of the light emitting element 2 are provided on the support substrate 18, and FIG.
• the step (D1) of providing the light emitting element 2 is shown.
• FIG. 17c is a step similar to the step (D2) shown in FIG. 7b, in which a resin film 19 is disposed while the partition wall 15 remains in place.
• resin (A) may be used, or known materials such as epoxy resin, (meth)acrylic polymer, polyurethane, polyester, polyolefin, and polysiloxane may be used. Further, a light shielding part or a reflecting part may be provided.
• the method further includes a driving element and a substrate, the driving element is connected to the light emitting element through wiring, and at least a part of the wiring is connected to the light emitting element.
• the driving element is connected to the light emitting element through wiring, and at least a part of the wiring is connected to the light emitting element.
• FIG. 7h shows a step (D9) in which the driving element has a driving element and a substrate, and the driving element is connected to the light emitting element through wiring.
• the driving element is connected to the light emitting element 2 through the wirings 4 and 4c, and a portion of the wiring 4c extends to the side surface of the light emitting element driving board 7. Note that if the light emitting element driving substrate 7 has a through electrode, it may be connected to the driving element 8 through the through electrode.
• the height of the display device itself can be reduced and high-speed response can be improved, and the display device can also be made smaller and have a narrower frame.
• the method for manufacturing a display device of the present invention further includes a step (D10) of providing a light shielding layer between the plurality of light emitting elements.
• FIG. 18a shows a step (D10) of providing a light shielding layer 25 between a plurality of light emitting elements 2.
• the light shielding layer 25 may be formed before forming the light emitting element 2, or may be formed after forming the light emitting element 2.
• the light shielding layer 25 may be composed of a cured film obtained by curing a resin composition containing (A) resin and (E) a coloring material, or may be composed of a material other than the resin composition containing (A) resin. Also, known materials such as epoxy resins, (meth)acrylic polymers, polyurethanes, polyesters, polyolefins, and polysiloxanes may be used.
• a black pigment may be used, such as black organic pigments such as carbon black, perylene black, and aniline black, graphite, and titanium, copper, iron, manganese, cobalt, chromium, nickel, and zinc.
• metal fine particles such as calcium and silver
• inorganic pigments such as metal oxides, composite oxides, metal sulfides, metal nitrides, and metal oxynitrides.
• it may be made black by combining a red pigment, a blue pigment, and, if necessary, a yellow pigment or other pigments.
• a dye may also be used. Two or more types of colorants may be contained.
• Photosensitivity may be imparted to the resin composition containing (A) resin and (E) colorant, and (B) photosensitizer described below may be used.
• a photolithography process may be used; if it does not have photosensitivity, a photoresist is formed on the light shielding layer, and then a photolithography process or an etching process is used. Alternatively, an etching process with a mask may be used.
• a patterned colored film can be obtained by heat-treating (post-baking) the obtained pattern. The heat treatment may be performed in air, under a nitrogen atmosphere, or in a vacuum state.
• the heating temperature is preferably 100 to 300°C, and the heating time is preferably 0.25 to 5 hours. The heating temperature may be changed continuously or in steps.
• the method for manufacturing a display device of the present invention is a method for manufacturing a display device having a light emitting element each having at least wiring, a cured film, and a plurality of electrodes on two different surfaces, the method comprising a step of arranging pads on a support substrate. (E1), forming a resin film made of a resin composition containing (A) resin on the support substrate and the pad (E2), exposing and developing the resin film to form the resin film; a step (E3) of forming a plurality of penetrating opening patterns in the film; curing the resin film; and the cured film having a transmittance of light at a wavelength of 450 nm of 0.1% or more and 95% or less at a thickness standard of 1 ⁇ m.
• the method includes a step (E6) of arranging the light emitting element on the cured film.
• FIG. 8 shows a cross-sectional view taken on a plane perpendicular to the supporting base or the counter substrate, showing an example of another manufacturing process of the display device 1 of the present invention.
• the steps in FIGS. 8b to 8e overlap with those in FIGS. 7b to 7f, so their explanations are omitted.
• Step (E1) is a step of arranging pads 17 on support substrate 18, as shown in FIG. 8a.
• the pad may be made of copper, aluminum, or the like.
• step (E2) as shown in FIG. 8b, a resin composition or a resin sheet containing (A) resin is applied or laminated on the support substrate 18 and the pad 17 to form a resin film 19. It is a process. Note that “on the support substrate” and “on the pad” refer to not only the surface of the support substrate and the surface of the pad, but also the upper side of the support substrate and the pad.
• a resin film may be formed by coating or laminating a resin sheet formed from a resin composition containing a resin or (A) resin.
• step (E3) is a step of forming a plurality of penetrating opening patterns 12 in the resin film 19 using a photolithography process, as shown in FIG. 8c.
• step (E10) as shown in FIG. 8c, the resin film 19 is cured so that the transmittance of light with a wavelength of 450 nm at a thickness standard of 1 ⁇ m is 0.1% or more and 95% or less.
• a barrier metal such as titanium is sputtered on the cured film 3, and a copper seed (seed layer) is further deposited on top of it by sputtering.
• step (E5) after forming a photoresist layer (not shown), the wiring 4 made of copper or a conductive film is formed by plating, sputtering, or processing with a photosensitive conductive paste.
• This is a step of forming the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by et al. After that, unnecessary photoresist, seed layer, and barrier metal are removed.
• the method for manufacturing a display device of the present invention includes repeating the step (E2), the step (E3), the step (E10), and the step (E5) a plurality of times to produce a cured film having the wiring in the cured film. It is preferable to have a step of forming a plurality of layers.
• the cured film 3 and the wiring 4 can be formed by repeating the same method again to form a cured film 3 consisting of two or more layers as shown in FIG. 8e.
• step (E6) is a step of arranging the light emitting element 2 on the cured film 3 so as to maintain electrical connection with the wiring 4, as shown in FIG. 8f.
• the electrode 6 of the light emitting element 2 and the wiring 4 may be connected directly, or may be connected via a bump, a conductive film, etc., for example.
• step (E7) of forming a cured film 21 on the cured film 3 and the light emitting element 2.
• the cured film 21 (A) a resin composition containing a resin is applied, or (A) a resin sheet composed of a resin composition containing a resin is laminated to form a resin film composed of a resin composition, and then cured. It is preferable to form the cured film 21 by doing so.
• it may be composed of a material other than the resin composition containing the resin (A), and known materials such as epoxy resin, silicone resin, and fluororesin may be used.
• Curing conditions vary depending on the type of resin, but include, for example, 80° C. to 230° C. for 15 minutes to 5 hours. The purpose of this is to protect and planarize the light emitting element by forming a cured film on the light emitting element.
• FIG. 8g shows an example in which the cured film 21 is formed and then the wiring 4d is formed thereon.
• the electrode 6 and the wiring 4d may be connected through a bump, a conductive film, or the like, or may be directly connected.
• the wiring 4d may be connected to the wiring 4 extending in the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2 through a through electrode or the like, or may be connected to the light emitting element driving board 7. .
• the counter substrate 5 is bonded to the cured film 21 using an adhesive or the like. Further, the supporting substrate 18 is peeled off, barrier metal 9 and bumps 10 are formed, and the light emitting element driving substrate 7 to which a driving element 8 such as a driver IC is added is electrically connected via the bump 10.
• the drive element 8 is electrically connected to the light emitting elements 2 via the wiring 4 extending in the cured film 3, thereby obtaining the display device 1 having a plurality of light emitting elements 2.
• the wiring 4 may include an electrode.
• One or more drive elements 8 are used for one light emitting element 2, one unit of light emitting element 2 consisting of red, blue, and green, a plurality of light emitting elements 2, or a plurality of units of light emitting elements 2 according to function.
• one or more driving elements may be arranged near the light emitting element during the process shown in FIG. 8. In that case, the driving element is electrically connected to the light emitting element 2 via the light emitting element driving substrate 7, the wiring 4c, the wiring 4 extending in the cured film 3, and the like.
• the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, makes it difficult to see from the outside, and improves the design. Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the method for manufacturing a display device of the present invention preferably has a step (E9) of providing a partition wall having a thickness equal to or greater than the thickness of the light emitting element after the step (E5).
• FIG. 9f shows a step (E9) of providing partition walls 15 after forming a plurality of layers of the cured film 3 shown in FIG. 8e. Thereafter, the light emitting element 2 is provided between the partition walls 15 as shown in FIG. 9g, and then the wiring 4d and the electrode 6 are electrically connected as shown in FIG. At the same time as bonding the counter substrate 5, the support substrate 18 is peeled off to form the barrier metal 9 and the bumps 10, which are electrically connected to the light emitting element drive substrate 7 having the drive elements 8 such as driver ICs via the bumps 10. .
• the method for manufacturing a display device of the present invention further includes a driving element and a substrate, the driving element is connected to the light emitting element through wiring, and at least a part of the wiring comprises: It is preferable to include a step (E11) extending to a side surface of the substrate.
• step (E11) is shown in FIG.
• FIG. 8h shows a step (E11) in which a driving element and a substrate are provided, and the driving element is connected to a light emitting element through wiring.
• the driving element is connected to the light emitting element 2 through the wirings 4 and 4c, and a portion of the wiring 4c extends to the side surface of the light emitting element driving board 7. Note that if the light emitting element driving substrate 7 has a through electrode, it may be connected to the driving element 8 through the through electrode.
• the height of the display device itself can be reduced and high-speed response can be improved, and the display device can also be made smaller and have a narrower frame.
• the method for manufacturing a display device of the present invention is a method for manufacturing a display device having a light emitting element each having at least wiring, a cured film, and a plurality of electrodes on two different surfaces, the method comprising: (A) resin on a substrate or the like; a step (F1) of forming a resin film made of a resin composition containing a resin composition; a step (F2) of forming a plurality of penetrating opening patterns in the resin film by exposing and developing the resin film; to form the cured film having a transmittance of 0.1% or more and 95% or less for light at a wavelength of 450 nm at a thickness standard of 1 ⁇ m (F3), at least a part of the surface of the cured film and a step (F4) of forming the wiring in a part of the opening pattern of the cured film; a step (F5) of arranging the light emitting element on the cured film so as to maintain electrical connection with the wiring; have
• FIG. 19 shows a cross-sectional view taken in a plane perpendicular to the light emitting element driving substrate, showing an example of the manufacturing process of the display device 1 according to the second aspect of the present invention.
• Step (F1) is a step of forming a resin film made of a resin composition containing resin (A) on a substrate or the like, as shown in FIG. 19a.
• a resin film may be formed by coating or laminating a resin composition containing the resin (A) or a resin sheet formed from the resin composition containing the resin (A).
• FIG. 19a shows an example of a TFT array substrate in which a TFT 22, an insulating film 23, and wiring 4 are arranged on a glass substrate.
• the insulating film 23 is not particularly limited, but includes, for example, a silicon oxide film, a silicon nitride film, an insulating film made of an organic material, and the like.
• step (F2) is a step of forming a plurality of penetrating opening patterns in the resin film using a photolithography process, as shown in FIG. 19a.
• step (F3) by curing the resin film, a cured film having a transmittance of light with a wavelength of 450 nm of 0.1% or more and 95% or less at a thickness standard of 1 ⁇ m is formed. This is the process of forming 3.
• step (F4) is a step of forming wiring on at least a part of the surface of the cured film and a part of the opening pattern of the cured film, as shown in FIG. 19b.
• a photoresist layer (not shown)
• this is a step of forming, for example, a wiring 4e on a part of the surface of the cured film 3 by sputtering or processing a photosensitive conductive paste. After that, unnecessary photoresist is removed.
• the wiring 4e is mainly made of gold, silver, copper, aluminum, nickel, titanium, molybdenum, alloys containing these, or oxides of at least one element among indium, gallium, zinc, tin, titanium, and niobium.
• Examples include photosensitive conductive pastes containing compounds, organic substances, and conductive particles as components, but other known materials may also be used.
• the method for manufacturing a display device of the present invention includes repeating the step (F1), the step (F2), the step (F3), and the step (F4) a plurality of times to form a cured film having the wiring in the cured film. It is preferable to have a step of forming a plurality of layers.
• a cured film 3 consisting of two or more layers can be formed as shown in FIG. 19c. After that, wiring 4c is formed.
• step (F5) is a step of arranging the light emitting element 2 on the cured film 3 so as to maintain electrical connection with the wiring 4e, as shown in FIG. 19d.
• the electrode 6 and the wiring 4e may be connected through a bump, a conductive film, or the like, or may be directly connected.
• the partition wall 15 may be formed before or after the light emitting element 2 is arranged. Thereafter, after forming the cured film 21, the wiring 4d is formed.
• the wiring 4d may be connected to the wirings 4 and 4e extending in the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2 through a through electrode or the like, or may be connected to the light emitting element driving board 7. .
• the counter substrate 5 is bonded together using an adhesive or the like.
• the drive element 8 such as a driver IC is electrically connected to the light emitting elements 2 via the wiring 4c and the wirings 4 and 4e extending in the cured film 3, thereby displaying the display device 1 having a plurality of light emitting elements 2.
• the wirings 4d and 4e also include electrodes.
• One or more drive elements 8 are used for one light emitting element 2, one unit of light emitting element 2 consisting of red, blue, and green, a plurality of light emitting elements 2, or a plurality of units of light emitting elements 2 according to function.
• one or more driving elements may be placed near the light emitting element during the process shown in FIG. 19. In that case, the driving element is electrically connected to the light emitting element 2 via the light emitting element driving substrate 7, the wiring 4c, the wiring 4 extending in the cured film 3, and the like.
• the electrical insulation of the wiring can be ensured by the cured film, and by extending the wiring into the cured film, the light emitting operation is controlled by electrically connecting the electrode of the light emitting element and the driving element. I can do it.
• the cured film hides the wiring, suppresses glare from the wiring, makes it difficult to see from the outside, and improves design. Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the method for manufacturing a display device of the present invention is a method for manufacturing a display device having a light emitting element each having at least wiring, a cured film, and a plurality of electrodes on two different surfaces, the method comprising: (A) resin on a substrate or the like; a step (G1) of forming a resin film made of a resin composition containing a resin composition; a step (G2) of forming a plurality of penetrating opening patterns in the resin film by exposing and developing the resin film; to form the cured film having a transmittance of 0.1% or more and 95% or less for light at a wavelength of 450 nm at a thickness standard of 1 ⁇ m (G3), at least a part of the surface of the cured film and
• the method may include a step (G4) of forming the wiring in a part of the opening pattern of the cured film, and a step (G5) of arranging the light emitting element so as to maintain electrical connection with the wiring.
• FIG. 29 shows a cross-sectional view taken in a plane perpendicular to the light emitting element drive substrate, showing an example of the manufacturing process of the display device 1 according to the second aspect of the present invention.
• Step (G1) is a step of forming a resin film made of a resin composition containing resin (A) on a substrate or the like, as shown in FIG. 29a.
• a resin film may be formed by coating or laminating a resin composition containing the resin (A) or a resin sheet formed from the resin composition containing the resin (A).
• FIG. 29a shows an example of a TFT array substrate in which a TFT 22, an insulating film 23, and wiring 4 are arranged on a glass substrate.
• the insulating film 23 is not particularly limited, but includes, for example, a silicon oxide film, a silicon nitride film, an insulating film made of an organic material, and the like.
• step (G2) is a step of forming a plurality of penetrating opening patterns in the resin film using a photolithography process, as shown in FIG. 29a.
• step (G3) as shown in FIG. 29a, the resin film is cured to form a cured film having a transmittance of light with a wavelength of 450 nm of 0.1% or more and 95% or less at a thickness standard of 1 ⁇ m. This is the process of forming 3.
• step (G4) is a step of forming wiring on at least a part of the surface of the cured film and a part of the opening pattern of the cured film, as shown in FIG. 29b.
• a photoresist layer (not shown)
• this is a step of forming, for example, a wiring 4e on a part of the surface of the cured film 3 by sputtering or processing a photosensitive conductive paste. After that, unnecessary photoresist is removed.
• the wiring 4e is mainly made of gold, silver, copper, aluminum, nickel, titanium, molybdenum, alloys containing these, or oxides of at least one element among indium, gallium, zinc, tin, titanium, and niobium.
• Examples include photosensitive conductive pastes containing compounds, organic substances, and conductive particles as components, but other known materials may also be used.
• the wiring 4c is formed as shown in FIG. 29c.
• step (G5) is a step of arranging the light emitting element 2 so as to maintain electrical connection with the wiring 4e, as shown in FIG. 29d.
• the electrode 6 and the wiring 4e may be connected through a bump, a conductive film, or the like, or may be directly connected.
• the cured film 3 or the partition wall 15 may be formed before or after disposing the light emitting element 2. Thereafter, after forming the cured film 21, the wiring 4d is formed.
• the wiring 4d may be connected to the wirings 4 and 4e extending in the cured film 3 disposed so as to be in contact with at least a portion of the light emitting element 2 through a through electrode or the like, or may be connected to the light emitting element driving board 7. .
• the counter substrate 5 is bonded together using an adhesive or the like.
• the drive element 8 such as a driver IC is electrically connected to the light emitting elements 2 via the wiring 4c and the wirings 4 and 4e extending in the cured film 3, thereby displaying the display device 1 having a plurality of light emitting elements 2.
• the wirings 4d and 4e also include electrodes.
• One or more drive elements 8 are used for one light emitting element 2, one unit of light emitting element 2 consisting of red, blue, and green, a plurality of light emitting elements 2, or a plurality of units of light emitting elements 2 according to function.
• one or more driving elements may be placed near the light emitting element during the process shown in FIG. 29. In that case, the driving element is electrically connected to the light emitting element 2 via the light emitting element driving substrate 7, the wiring 4c, the wiring 4 extending in the cured film 3, and the like.
• the electrical insulation of the wiring can be ensured by the cured film, and by extending the wiring into the cured film, the light emitting operation is controlled by electrically connecting the electrode of the light emitting element and the driving element. I can do it.
• the cured film hides the wiring, suppresses glare from the wiring, makes it difficult to see from the outside, and improves design. Furthermore, visibility can be improved by reducing reflection of external light and improving contrast.
• the display device of the present invention is suitably used for display devices such as various LED displays, various lamps for vehicles, and the like.
• a varnish made of a resin composition was spin-coated onto a 5 cm square glass substrate so that the film thickness after heat treatment at 230° C. for 1 hour was 1.0 ⁇ m or more, and prebaked at 120° C. for 3 minutes. Thereafter, using a high-temperature clean oven CLH-21CD-S manufactured by Koyo Thermo System Co., Ltd., the temperature was raised from 50°C to 110°C at a rate of 3.5°C/min under a nitrogen stream with an oxygen concentration of 100 ppm or less. Heat treatment was performed at 110°C for 30 minutes.
• the thickness of the coating film after pre-baking and after development was measured using an optical interference film thickness measuring device Lambda Ace STM-602 manufactured by Dainippon Screen Mfg. Co., Ltd. with a refractive index of 1.629. The thickness of the film was measured using a refractive index of 1.629.
• the transmittance of the thus obtained cured film at a wavelength of 450 nm was measured using a double beam spectrophotometer U-2910 (manufactured by Hitachi High-Tech Science Co., Ltd.).
• the film thickness of the heat-resistant resin film after heat treatment was not 1.0 ⁇ m or 5.0 ⁇ m, the film thickness of the measured transmission spectrum was converted to 1.0 ⁇ m or 5.0 ⁇ m according to Lambert's law. value.
• the wiring concealing ability of the cured film was evaluated using the display devices described in the Examples and Comparative Examples below.
• a microscope was used for the measurement.
• the glare of the wiring was suppressed using a microscope, and visually evaluated whether it was hidden.
• a display device in which the glare of at least a portion of the wiring is suppressed by a hardened film and is difficult to see is considered to be hidden and is considered good. 2.
• a display device in which the wiring can be clearly confirmed visually due to the hardened film. was rated 1 as defective.
• a varnish made of a resin composition was prepared and applied onto an 8-inch silicon wafer using a spin coating method using a coating and developing device ACT-8 (manufactured by Tokyo Electron Ltd.) so that the film thickness after heat treatment was 5 ⁇ m.
• Coating and pre-baking were performed to prepare a pre-baked film. Prebaking was performed at 120°C for 3 minutes. Thereafter, each layer was exposed to light using an i-line stepper (manufactured by Nikon Corporation, NSR-2205i14) at an exposure dose of 50 to 1000 mJ/cm 2 .
• the size of the circular pattern used for exposure was 5 to 30 ⁇ m.
• TMAH tetramethylammonium
• Tama Chemical Industries tetramethylammonium
• the film was developed, then rinsed with pure water, and dried by shaking to obtain a patterned film. Alternatively, it was developed using cyclopentanone and dried by shaking to obtain a patterned film.
• a photoresist was formed before exposure, then exposed and developed, and the photoresist was removed after development.
• the film thicknesses after prebaking and after development were measured using an optical interference film thickness measuring device Lambda Ace STM-602 manufactured by Dainippon Screen Mfg. Co., Ltd., with a refractive index of 1.629.
• the wafer was taken out when the temperature became 50° C. or less, the wafer was cut, and the cross-sectional shape of a circular pattern of 5 to 30 ⁇ m was observed and measured using a scanning electron microscope S-4800 (manufactured by Hitachi High-Tech).
• the angle of the inclined side was determined by connecting the opening pattern at the position halved in the thickness direction of the cured film and the opening pattern at the bottom with a straight line.
• Level A those with an angle of 55° or more and 80° or less are classified as Level A
• Level B those with an angle of 40° or more and less than 55° or greater than 80° and 85° or less are classified as Level B
• Level C those with an angle of 40° or more and less than 85° are classified as Level B. It was rated as level C.
• diimidazole dodecanoate (7.4 g, 0.023 mol), 1,1'-(4,4'-oxybenzoyl)diimidazole (hereinafter referred to as PBOM) (8.1 g, 0.023 mol) ) was added together with 25 g of NMP and reacted at 85° C. for 3 hours.
• PBOM 1,1'-(4,4'-oxybenzoyl)diimidazole
• SiDA 1,3-bis(3-aminopropyl)tetramethyldisiloxane
• ODPA 4,4'-oxydiphthalic anhydride
• reaction solution was poured into 3 L of water to obtain a white precipitate.
• This precipitate was collected by filtration, washed twice with water and once with isopropanol, and then dried in a vacuum dryer at 50° C. for 72 hours to obtain a polyimide precursor (A-9).
• EA ethyl acrylate
• 2-EHMA 2-ethylhexyl methacrylate
• St styrene
• St acrylic acid
• 0.8 g of 2,2'-azobisisobutyronitrile and 10 g of DMEA was added dropwise over a period of 1 hour. After the dropwise addition was completed, a polymerization reaction was further carried out at 80° C. under a nitrogen atmosphere for 6 hours.
• the acid value of the obtained acrylic resin (A-10) was 103 mgKOH/g.
• the obtained 17.50 g of resin solution, 44.02 g of silver particles with an average particle size of 1.0 ⁇ m, and 0.28 g of carbon black with an average particle size of 0.05 ⁇ m were mixed, and the mixture was milled using a three-roller mill “EXAKT M -50'' (manufactured by EXAKT) to obtain 61.8 g of photosensitive conductive paste 1.
• the average particle diameter of silver particles and carbon black was determined by observing each particle using an electron microscope (SEM) at a magnification of 10,000 times and a field of view width of 12 ⁇ m, and 40 randomly selected silver particles and carbon black. The maximum width of each primary particle was measured, and their number average value was calculated.
• the obtained preliminary dispersion was supplied to an Ultra Apex Mill, a dispersion machine manufactured by Kotobuki Kogyo Co., Ltd. equipped with a centrifugal separator filled with 75% by volume of 0.05 mm ⁇ zirconia beads, and dispersed for 3 hours at a rotational speed of 8 m/s.
• This carbon black CB-Bk1 (200g), a 40% by mass solution (94g) of propylene glycol monomethyl ether acetate of acrylic resin (A-11), a 40% by mass solution (31g) of Bic Chemie Japan LPN21116 as a polymer dispersant, and Propylene glycol monomethyl ether acetate (675 g) was placed in a tank and stirred for 1 hour using a homomixer (manufactured by Tokushu Kika) to obtain a preliminary dispersion.
• a homomixer manufactured by Tokushu Kika
• the preliminary dispersion liquid was supplied to an Ultra Apex mill (manufactured by Kotobuki Kogyo) equipped with a centrifugal separator filled with 70% of 0.05 mm ⁇ zirconia beads (YTZ balls manufactured by Nikkato), and dispersion was performed at a rotation speed of 8 m/s for 2 hours.
• Pigment Dispersion 1 (C-4-1)> After mixing 57.7 g of "Solsperse (registered trademark)" 20000 (polyether polymer resin dispersant having a tertiary amino group at the end of the molecule) with 750.0 g of PGMEA as a solvent and stirring for 10 minutes. , 192.3 g of titanium nitride (average primary particle size 25 nm; "TiN” in the table) was added and stirred for 30 minutes, followed by wet media dispersion treatment and filtration using a horizontal bead mill (PP filter pore size 0.8 ⁇ m). Pigment dispersion 1 (C-4-1) was prepared. Note that the average dispersed particle diameter of titanium nitride contained in Pigment Dispersion 1 was 85 nm.
• ⁇ Preparation Example 7 Preparation of Pigment Dispersion 2 (C-4-2)>
• the organic blue pigment C.I. I. Pigment Blue 60 (average primary particle size 60 nm), an organic red pigment C.I. I. Pigment Red 190 (average primary particle size 55 nm), organic yellow pigment C.I. I. Pigment Yellow 192 (average primary particle size: 40 nm) was used to prepare each pigment dispersion in the same manner as in Preparation Example 1.
• I. Pigment Blue 60 has an average dispersed particle size of 162 nm
• C.I. I. Pigment Red 190 has an average dispersed particle size of 110 nm
• Pigment Yellow 192 had an average dispersed particle diameter of 90 nm. 400.0 g of organic blue pigment dispersion, 300.0 g of organic red pigment dispersion, and 300.0 g of organic yellow pigment dispersion were mixed and stirred for 10 minutes to prepare pigment dispersion 2 (C- 4-2) was prepared.
• Table 1 shows the formulation of the resin composition composed of (A) resin, (B) photosensitizer, (C) colorant, etc.
• Resin composition 1-21 was prepared using the solvents listed in Table 1 so that the solid content concentration was 40% by mass.
• Tables 2-1 and 2-2 show the resin compositions used in the examples, the light transmittance (%) at a wavelength of 450 nm based on the thickness of the cured film of the resin composition of 5 ⁇ m, and the overall percentage of the cured film. The thickness ( ⁇ m), the number of layers of the cured film, the shape and length of the opening pattern obtained by processing the cured film, and the angle of the inclined side of the opening pattern are shown.
• Level A display devices in which the wiring glare is suppressed and hidden by a cured film and the longest length of the opening pattern is 2 ⁇ m or less are classified as Level A; Level B displays that suppress glare, are concealed, and have an aperture pattern with a maximum length of 5 ⁇ m or less; display devices that suppress wiring glare with a cured film, are concealed, and have an aperture pattern that has a maximum length of 5 ⁇ m or less; 20 ⁇ m or less is Level C, and a display device in which the glare of the wiring is suppressed and hidden by a cured film and the longest length of the opening pattern is greater than 20 ⁇ m is Level D. Level E is when the wiring can be clearly confirmed visually.
• evaluation level (2) those with an angle of slanted sides of 55° or more and 80° or less are classified as Level A, and those that are 40° or more and less than 55° or greater than 80° and 85° or less are classified as Level B, less than 40° or 85°. The larger one was rated as level C.
• Example 1 (Configuration of Figure 7) An embodiment of the display device of the present invention will be described in accordance with a cross-sectional view taken in a plane perpendicular to the supporting base or the counter substrate showing the manufacturing process in FIG.
• a glass substrate was used as the support substrate 18.
• a temporary attachment material made of polyimide was placed on the glass substrate, and ITO was formed as a wiring 4d on a part of the surface of the temporary attachment material by sputtering.
• the light emitting element 2 which is a light emitting element, was placed on the support substrate 18 (corresponding to step (D1)).
• the thickness of the light emitting element 2 was 7 ⁇ m, the length of one side was 30 ⁇ m, and the length of the other side was 50 ⁇ m.
• the resin composition 1 shown in Table 1 was coated on the support substrate 18 and the light emitting element 2 so as to have a thickness of 10 ⁇ m after heat treatment to form a resin film 19 (step (equivalent to D2)).
• i-line (365 nm) was irradiated onto the resin film 19 through a mask having a desired pattern.
• the exposed resin film 19 was developed using a 2.38 mass % tetramethylammonium (TMAH) aqueous solution to form a plurality of opening patterns 12 penetrating the resin film 19 in the thickness direction (step (D3)).
• TMAH tetramethylammonium
• the shape of the opening pattern was circular, and the longest length of the bottom part in the smallest area of the opening pattern was 2 ⁇ m in diameter.
• the resin film 19 was heat-treated at 110° C. for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, and then further heat-treated at 230° C. for 60 minutes to form a cured film 3 with a thickness of 10 ⁇ m (step ( D4)).
• the resin film 19 is cured as it is to become the cured film 3.
• a titanium barrier metal was sputtered on the cured film 3, and a copper seed layer was further formed thereon by a sputtering method.
• a wiring 4 made of copper that is electrically connected to the light emitting element 2 is formed on the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by a plating method.
• the photoresist, seed layer, and barrier metal were removed (corresponding to step (D5)).
• the thickness of the wiring 4a formed on a part of the surface of the cured film 3 was 5 ⁇ m.
• step (D2), step (D3), step (D4), and step (D5) were repeated twice to form three layers of cured film 3.
• the total thickness of the three-layer cured film 3 was 30 ⁇ m.
• a barrier metal 9 was formed in the opening pattern 12 of the cured film 3 by sputtering to form a bump 10.
• the solder is reflowed at 260° C. for 1 minute to electrically connect to the light emitting element driving board 7 having the driver IC, which is the driving element 8, through the bumps 10, and then to the supporting substrate. 18 was peeled off and the counter substrate 5 was bonded together using an adhesive or the like, thereby obtaining a display device 1 having a plurality of light emitting elements 2.
• a glass substrate having copper wiring was used as the light emitting element driving substrate 7, and on the side thereof, wiring 4c was used as shown in FIG. 7h, and the photosensitive conductive paste 1 of Preparation Example 1 was used as the wiring 4c ( (corresponds to step D9).
• the wiring 4c was manufactured as follows.
• the transfer sample was pasted on both sides so that part of the wiring was placed on the edge of the glass with the R-chamfered part, the side surface of the glass was pressed against a hot plate at 130°C for 30 seconds, and then a hot roll laminator was used. The remaining portion was transferred under the conditions of , 130° C., and 1.0 m/min.
• Example 2 A display device 2 was obtained in the same manner as in Example 1 except that the resin composition 1 of Example 1 was replaced with a resin sheet made of resin composition 2 and the resin film 19 was formed by lamination.
• Examples 3 to 14 Display devices 3 to 14 were obtained in the same manner as in Example 1 except that Resin Composition 1 in Example 1 was changed to Resin Compositions 3 to 14.
• Example 15 Regarding Example 1, resin composition 1 was coated on support substrate 18 and light emitting element 2 so as to have a thickness of 20 ⁇ m after heat treatment, thereby forming resin film 19. As a result, a display device 15 was obtained in the same manner as in Example 1 except that the total thickness of the three-layer cured film 3 was 40 ⁇ m.
• Example 16 An embodiment of the display device of the present invention will be described in accordance with a cross-sectional view taken in a plane perpendicular to the supporting base or the counter substrate showing the manufacturing process in FIG.
• pads 17 made of copper were placed on support substrate 18 (corresponding to step (E1)).
• the thickness of the pad was 0.2 ⁇ m.
• the resin composition 2 shown in Table 1 was coated on the support substrate 18 and the pad 17 so as to have a thickness of 10 ⁇ m after heat treatment to form a resin film 19 (step ( E2)).
• the resin film 19 was cured under the same conditions as in Example 1 to form a cured film 3 with a thickness of 10 ⁇ m (corresponding to step (E4)).
• a barrier metal such as titanium is sputtered on the cured film 3, and a copper seed (seed layer) is further deposited on top of it by sputtering. Formed.
• a wiring 4 made of copper was formed on the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by plating (step (equivalent to E5)).
• the thickness of the wiring 4 formed on a part of the surface of the cured film 3 was 5 ⁇ m.
• step (E2), step (E3), step (E4), and step (E5) were repeated twice to form three layers of cured film 3 having wiring 4 in cured film 3, as shown in FIG. 8e. .
• the total thickness of the three-layer cured film 3 was 30 ⁇ m.
• the light emitting element 2 was placed on the cured film 3 so as to maintain electrical connection with the wiring 4 (corresponding to step (E6)).
• the thickness of the light emitting element 2 was 7 ⁇ m.
• a resin film 19 made of the resin composition 2 was formed on the light emitting element 2 and cured by heat treatment to form a cured film 21.
• the cured film 21 was formed by heat treatment at 110° C. for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, and then further heat treatment at 230° C. for 60 minutes.
• ITO was formed as a wiring 4d on a part of the surface of the cured film 21 by sputtering.
• the support substrate 18 is peeled off, and the light emitting element driving substrate 7 having the driver IC, which is the driving element 8, is electrically connected to the light emitting element 2 via the bumps 10.
• the counter substrate 5 By bonding the counter substrate 5 together using an adhesive or the like, a display device 16 having a plurality of light emitting elements 2 was obtained.
• a glass substrate having copper wiring was used as the light-emitting element drive substrate 7, and on the side thereof, wiring 4c was used as shown in FIG. 8h, and the photosensitive conductive paste 1 of Preparation Example 1 was used as the wiring 4c.
• Example 17 Example 16 except that the resin composition 2 of Example 16 was changed to resin composition 10, the support substrate 18 was used as the light emitting element driving substrate 7 on which the wiring 4c was formed, and it was used as it was without going through the peeling process. A display device 17 was obtained in the same manner as above.
• Example 18 In Example 16, T693/R4000Series (manufactured by Nagase ChemteX Co., Ltd.) was used as the cured film 21 to be formed on the light emitting element 2, and the cured film 21 was formed by heat treatment at 150° C. for 60 minutes. A display device 18 was obtained in the same manner as in Example 16.
• Example 19 After forming a plurality of layers of the cured film 3 shown in FIG. 8e in the same manner as in Example 15, the resin composition 2 was applied between and around the light emitting elements 2 to be disposed later, as shown in FIG. 9f. After forming the partition walls 15 (corresponding to step (E9)), a plurality of light emitting elements 2 are arranged as shown in FIG. 9g, and as shown in FIG. By electrically connecting the light emitting element driving substrate 7 having the driver IC, which is the driving element 8, and bonding the counter substrate 5 to the light emitting element 2 using an adhesive or the like, a plurality of light emitting elements 2 can be formed. A display device 19 having the following was obtained. Note that the thickness of the light emitting element 2 was 7 ⁇ m, and the thickness of the partition wall was 10 ⁇ m.
• Example 20 As shown in FIG. 17a, partition walls 15 were formed on support substrate 18 (corresponding to step D8). Next, as shown in FIG. 17b, light emitting elements 2 were formed between the partition walls 15 (step (corresponding to D1)). Other than that, the display device 20 was manufactured using the same steps as in Example 3. In addition, the thickness of the light emitting element 2 was 7 ⁇ m, and the thickness of the partition wall 15 was formed to be 10 ⁇ m. For the partition wall 15, an acrylic resin containing a known white pigment was used.
• Example 21 The display device 21 was obtained in the same manner as in Example 1 except that resin composition 1 in Example 1 was changed to resin composition 17, a photoresist was formed before exposure, and the photoresist was removed after development. Ta.
• Example 22 A display device 22 was obtained in the same manner as in Example 1 except that Resin Composition 1 in Example 1 was changed to Resin Composition 18.
• Example 23 A display device 23 was obtained in the same manner as in Example 1 except that Resin Composition 1 in Example 1 was changed to Resin Composition 19 and the exposed resin film 19 was developed using cyclopentanone. Ta.
• Example 24-25 Resin composition 1 in Example 1 was changed to resin compositions 20 to 21, and resin composition 1 listed in Table 1 was coated on the support substrate 18 and the light emitting element 2 to a thickness of 8 ⁇ m after heat treatment. , a resin film 19 was formed (corresponding to step (D2)).
• i-line (365 nm) was irradiated onto the resin film 19 through a mask having a desired pattern.
• the exposed resin film 19 was developed using a 2.38 mass % tetramethylammonium (TMAH) aqueous solution to form a plurality of opening patterns 12 penetrating the resin film 19 in the thickness direction (step (D3)). ).
• TMAH tetramethylammonium
• the resin film 19 was heat-treated at 110° C. for 30 minutes in an atmosphere with an oxygen concentration of 100 ppm or less, and then further heat-treated at 230° C. for 60 minutes to form a cured film 3 with a thickness of 8 ⁇ m (step ( D4)).
• the resin film 19 is cured as it is to become the cured film 3.
• a titanium barrier metal was sputtered on the cured film 3, and a copper seed layer was further formed thereon by a sputtering method.
• a wiring 4 made of copper that is electrically connected to the light emitting element 2 is formed on the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by a plating method.
• the photoresist, seed layer, and barrier metal were removed (corresponding to step (D5)).
• the thickness of the wiring 4a formed on a part of the surface of the cured film 3 was 2 ⁇ m.
• step (D2), step (D3), step (D4), and step (D5) were repeated twice to form three layers of cured film 3.
• the second and third cured films 3 were formed to have a thickness of 4 ⁇ m after the heat treatment.
• the total thickness of the three-layer cured film 3 was 16 ⁇ m.
• display devices 24 to 25 were obtained in the same manner as in Example 1.
• Example 26 A display device 26 was obtained in the same manner as in Example 16 except that Resin Composition 2 in Example 16 was changed to Resin Composition 18.
• Example 27 A display device 27 was obtained in the same manner as in Example 16 except that resin composition 2 in Example 16 was changed to resin composition 19 and the exposed resin film 19 was developed using cyclopentanone. Ta.
• Example 28-29 Resin composition 2 in Example 16 was changed to resin compositions 20 to 21, and as shown in FIG. to form a resin film 19 (corresponding to step (E2)).
• the resin film 19 was cured under the same conditions as in Example 1 to form a cured film 3 with a thickness of 4 ⁇ m (corresponding to step (E4)).
• a barrier metal such as titanium is sputtered on the cured film 3, and a copper seed (seed layer) is further deposited on top of it by sputtering. Formed.
• a wiring 4 made of copper was formed on the opening pattern 12 of the cured film 3 and a part of the surface of the cured film 3 by plating (step (equivalent to E5)).
• the thickness of the wiring 4 formed on a part of the surface of the cured film 3 was 2 ⁇ m.
• step (E2), step (E3), step (E4), and step (E5) were repeated twice to form three layers of cured film 3 having wiring 4 in the cured film, as shown in FIG. 8e.
• the total thickness of the three-layer cured film 3 was 12 ⁇ m.
• the same method as in Example 16 was carried out to obtain display devices 28 to 29.
• Example 30 In Example 3, as shown in FIG. 7h, a TFT substrate is used as the light emitting element driving substrate 7, and a groove is formed on the side surface by laser processing, titanium and copper are formed in that order by sputtering, and then copper is formed by plating. was formed to form a wiring 4c (corresponding to step D9).
• the display device 30 was obtained in the same manner as in Example 3 except for the above.
• Example 31 In Example 16, as shown in FIG. 8h, a TFT substrate was used as the light emitting element drive substrate 7, a groove was formed on the side surface by laser processing, titanium and copper were formed in that order by sputtering, and then copper was formed by plating. was formed to form a wiring 4c (corresponding to step E11).
• the display device 31 was obtained in the same manner as in Example 16 except for the above.
• Example 32 On the side surface of the light emitting element drive substrate 7 of Example 30, wiring 4c was used as shown in FIG. 7h, and the photosensitive conductive paste 1 of Preparation Example 1 was used as the wiring 4c (corresponding to step D9). Other than that, the same method as in Example 30 was carried out to obtain a display device 32.
• Example 33 On the side surface of the light emitting element drive substrate 7 of Example 31, wiring 4c was used as shown in FIG. 8h, and the photosensitive conductive paste 1 described in Example 32 was used as the wiring 4c (corresponding to step E11). Other than that, the same method as in Example 31 was performed to obtain a display device 33.
• Example 34 The same method as in Example 30 except that a printed wiring board was used as the light emitting element driving substrate 7 of Example 30, and the driving element 8 and wiring 4 were connected through the wiring and bumps 10 in the printed wiring board without forming the wiring 4c. A display device 34 was obtained.
• Example 35 The same method as in Example 31 except that a printed wiring board was used as the light emitting element driving substrate 7 of Example 31, and the driving element 8 and wiring 4 were connected through the wiring and bumps 10 in the printed wiring board without forming the wiring 4c. A display device 35 was obtained.
• Example 36 As shown in FIG. 18a, a light shielding layer 25 was formed on the support substrate 18 (corresponding to step D10). Next, as shown in FIG. 18a, a light emitting element 2 was formed between the light shielding layers 25 (step (corresponding to D1)). Other than that, the display device 36 was manufactured using the same steps as in Example 3.
• the production of the light shielding layer 25 is as follows.
• Colored resin composition 1 was coated on the support substrate 18 to a thickness of 1 ⁇ m after heat treatment, and the coated film was dried by heating on a 100° C. hot plate for 2 minutes. This dried film was exposed to ultraviolet light at an exposure dose of 200 mJ/cm 2 using an exposure machine equipped with an ultra-high pressure mercury lamp. Next, a patterned film was obtained by developing using an alkaline developer of 0.045% by mass potassium hydroxide aqueous solution and then washing with pure water. The obtained pattern film was post-baked at 230° C. for 30 minutes in a hot air oven to obtain a light shielding layer.
• Example 37 A display device 37 was manufactured in the same steps as in Example 36, except that the light-shielding layer 25 in Example 36 was changed to colored resin composition 2 to form the light-shielding layer 25.
• Example 38 In FIG. 7f, the thickness of the wiring 4a in contact with the bump 10 was 10 ⁇ m, the thickness of the cured film 3 formed on a part of the surface of the wiring 4a was 15 ⁇ m, and the thickness of the entire cured film 3 was 35 ⁇ m.
• a display device 38 was obtained in the same process as in 3.
• Example 39 In FIG. 8b, the process was the same as in Example 16, except that the pad 18 had a thickness of 10 ⁇ m, the cured film 3 formed on a part of the surface of the pad had a thickness of 15 ⁇ m, and the entire cured film 3 had a thickness of 35 ⁇ m. A display device 39 was obtained.
• Example 40 An embodiment of the display device of the present invention will be described according to the manufacturing process cross-sectional view of FIG. As shown in FIG. 19a, a TFT array substrate is used as the light emitting element driving substrate 7, and the resin composition 2 shown in Table 1 is coated on the light emitting element driving substrate 7 to a thickness of 3 ⁇ m after heat treatment. A film 19 was formed (corresponding to step (F1)). Note that the thickness of the wiring 4 was 1 ⁇ m.
• the resin film 19 was cured under the same conditions as in Example 3 to form a cured film 3 with a thickness of 3 ⁇ m (corresponding to step (F3)).
• step (F4) there is a step of forming the wiring on at least a part of the surface of the cured film and a part of the opening pattern of the cured film.
• a photoresist layer (not shown)
• ITO was formed as a wiring 4e on a part of the surface of the cured film 3 by sputtering. After that, unnecessary photoresist was removed. (corresponding to step (F4)).
• the thickness of ITO was 0.1 ⁇ m.
• steps (F1), (F2), and (F3) were repeated to cure the resin composition 3 listed in Table 1, thereby forming a cured film 3 with a thickness of 3 ⁇ m.
• the wiring 4c using the photosensitive conductive paste 1 of Preparation Example 1 was formed as the wiring 4c.
• partition walls 15 were formed on the cured film 3.
• the light emitting element 2 was formed between the partition walls 15 (step (corresponding to F5)). Note that the thickness of the light emitting element 2 was 7 ⁇ m, and the thickness of the partition wall 15 was 8 ⁇ m.
• an acrylic resin containing a known white pigment was used for the partition wall 15.
• a resin film 19 made of the resin composition 2 was formed on the cured film 3 and the light emitting element 2, and was cured by heat treatment to form a cured film 21.
• ITO was formed as the wiring 4d on a part of the surface of the cured film 3 by sputtering.
• a display device 40 having a plurality of light emitting elements 2 is obtained by electrically connecting the driving element 8 such as a driver IC to the light emitting element 2 via the wiring 4c, the wiring 4 extending in the cured film 3, and the wiring 4e. Ta.
• Example 41-42 Display devices 41 to 42 were obtained in the same manner as in Example 40, except that Resin Composition 2 in Example 40 was changed to Resin Compositions 13 and 21.
• Example 43 Using a light emitting element 2 having electrodes on each discontinuous surface as shown in FIG. 22, a temporary attachment material made of polyimide is placed on a glass substrate, and a support substrate on which the temporary attachment material is placed is used.
• a display device 43 was obtained in the same manner as in Example 3 except that the light emitting element 2, which is a light emitting element, was placed on the light emitting element 18 (corresponding to step (D1)).
• Example 44 A display device 44 was obtained in the same manner as in Example 16, except that the light emitting element 2 having electrodes on discontinuous surfaces as shown in FIG. 23 was used.
• Example 45 A display device 45 was obtained in the same manner as in Example 40, except that the light emitting elements 2 each having electrodes on discontinuous surfaces as shown in FIG. 24 were used.
• Example 46 A display device 46 was obtained in the same manner as in Example 25, except that the number of layers of the cured film 3 was 1 and the total thickness was 5 ⁇ m.
• Example 47 A display device 47 was obtained in the same manner as in Example 3 except that the number of layers of the cured film 3 was 5 and the total thickness was 50 ⁇ m.
• Example 48 A display device 48 was obtained in the same manner as in Example 3 except that the number of layers of the cured film 3 was 4 and the total thickness was 60 ⁇ m.
• Example 49 A display device 49 was obtained in the same manner as in Example 3 except that the number of layers of the cured film 3 was 11 and the total thickness was 110 ⁇ m.
• Example 50 of the display device according to the second aspect of the present invention will be described according to a cross-sectional view taken in a plane perpendicular to the light emitting element driving substrate showing the manufacturing process of FIG. 29.
• a TFT array substrate is used as the light emitting element driving substrate 7, and the resin composition 13 listed in Table 1 is coated on the light emitting element driving substrate 7 to a thickness of 3 ⁇ m after heat treatment.
• a film 19 was formed (corresponding to step (G1)). Note that the thickness of the wiring 4 was 1 ⁇ m.
• a plurality of opening patterns 12 were formed in the resin film 19 under the same conditions as the photolithography process shown in Example 3 (corresponding to step (G2)).
• the resin film 19 was cured under the same conditions as in Example 3 to form a cured film 3 with a thickness of 3 ⁇ m (corresponding to step (G3)).
• step (Gb) there is a step of forming the wiring on at least a part of the surface of the cured film and a part of the opening pattern of the cured film.
• a photoresist layer (not shown)
• ITO was formed as a wiring 4e on a part of the surface of the cured film 3 by sputtering. After that, unnecessary photoresist was removed. (corresponding to step (G4)).
• the thickness of ITO was 0.1 ⁇ m.
• a wiring 4c using the photosensitive conductive paste 1 of Preparation Example 1 was formed as the wiring 4c.
• partition walls 15 were formed on the cured film 3.
• the light emitting element 2 was formed between the partition walls 15 (step (corresponding to G5)). Note that the thickness of the light emitting element 2 was 7 ⁇ m, and the thickness of the partition wall 15 was 8 ⁇ m.
• an acrylic resin containing a known white pigment was used for the partition wall 15.
• a resin film 19 made of the resin composition 2 was formed on the cured film 3 and the light emitting element 2, and was cured by heat treatment to form a cured film 21.
• ITO was formed as the wiring 4d on a part of the surface of the cured film 3 by sputtering.
• the counter substrate 5 was bonded together using an adhesive.
• the drive element 8 such as a driver IC is electrically connected to the light emitting element 2 via the wiring 4c, the wiring 4 extending in the cured film 3, and the wiring 4e, so that a display device 52 having a plurality of light emitting elements 2 can be connected. I got it.
• Example 51 A display device 53 was obtained in the same manner as in Example 50, except that resin composition 13 in Example 50 was changed to resin composition 21.
• Example 52 A display device 54 was obtained in the same manner as in Example 50, except that a light emitting element 2 having electrodes on discontinuous surfaces as shown in FIG. 28 was used.
• Example 53 A display device 55 was obtained in the same manner as in Example 52 except that resin composition 13 in Example 52 was changed to resin composition 21.
• the cured film 3 has a sufficiently low light transmittance, so the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, and makes it difficult to see from the outside. This made it possible to improve the design.
• the thickness of the cured film is smaller than that of conventional flexible substrates, it is possible to reduce wiring defects such as short circuits by lowering the package height and shortening the wiring distance, reduce loss, and improve high-speed response. there were.
• the display devices 1 to 20, 22 to 49, 52, and 54 can be microfabricated, minute light emitting elements can be applied, and the light emitting elements can be mounted at high density.
• a cured film made of a resin composition can be used as the partition wall 15, and by forming the partition wall, bonding of the opposing substrates is facilitated. Furthermore, since the cured film 3 of the display devices 13, 24-25, 28-29, 41-42, and 52-55 is black, the cured film 3 hides the wiring 4, suppresses the glare of the wiring 4, and In addition to improving the design by making it more difficult to see, visibility was also improved by reducing the reflection of external light and improving contrast. Furthermore, in the display devices 1 to 33, 36 to 49, and 52 to 55, at least a portion of the wiring 4c extends to the side surface of the substrate, so that the display device itself can be made lower in height and has improved high-speed response.
• the display device 36 and 37 suppress light leakage from the light-emitting elements and color mixing between each pixel, and improve contrast without significantly impairing light extraction efficiency. It was possible to improve.
• the thickness of the wiring near the bump 10 is thicker than the thickness of the wiring near the light emitting element 2, so that wiring defects can be suppressed when connecting the light emitting element drive board 7 using the bump 10, and reliability is improved. It was possible to obtain a high display device.
• the display devices 46, 52 to 55 have one layer of cured film 3, the number of light emitting elements that can be arranged is limited.
• the thickness of the entire cured film exceeded 100 ⁇ m, and the level difference flatness was deteriorated, which caused a problem when mounting the light emitting element.
• the light transmittance of the cured film 3 was sufficiently high, so that the hiding property of the cured film 3 including suppressing glare from the wiring 4 was insufficient.
• Display device 2 Light emitting element 3 Cured films 4, 4c, 4d, 4e Wiring 4a Thickness 4b of wiring arranged on the surface of the cured film Wiring extending in an opening pattern penetrating the cured film in the thickness direction Thickness 5
• Counter substrate 6 Electrode 7
• Light emitting element drive substrate 8 Drive element 9
• Barrier metal 10 Bump 11a Designated area A 11b Specified area B 12 Opening pattern 13
• Bottom part of wiring 4 14 Longest length of bottom part 15
• Partition wall 16
• External substrate 17
• Support substrate 19 Resin film 20
• Total thickness of cured film 21 Cured film 22 TFT 23 TFT insulating layer 24
• Contact hole 25 Light shielding layer 26 Slanted side 27 Angle of sloped side 28 Thickness of cured film 3 29

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• 2023
  • 2023-04-14 KR KR1020247023009A patent/KR20250002105A/ko active Pending
  • 2023-04-14 JP JP2023524876A patent/JPWO2023204156A1/ja active Pending
  • 2023-04-14 CN CN202380019102.5A patent/CN118742939A/zh active Pending
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