WO2023189799A1 - 自己架橋性ポリマー及びレジスト下層膜形成組成物 - Google Patents
自己架橋性ポリマー及びレジスト下層膜形成組成物 Download PDFInfo
- Publication number
- WO2023189799A1 WO2023189799A1 PCT/JP2023/010815 JP2023010815W WO2023189799A1 WO 2023189799 A1 WO2023189799 A1 WO 2023189799A1 JP 2023010815 W JP2023010815 W JP 2023010815W WO 2023189799 A1 WO2023189799 A1 WO 2023189799A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- aromatic
- underlayer film
- resist underlayer
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2150/00—Compositions for coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/142—Side-chains containing oxygen
- C08G2261/1424—Side-chains containing oxygen containing ether groups, including alkoxy
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/31—Monomer units or repeat units incorporating structural elements in the main chain incorporating aromatic structural elements in the main chain
- C08G2261/314—Condensed aromatic systems, e.g. perylene, anthracene or pyrene
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
- C08G2261/344—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing heteroatoms
Definitions
- An object of the present invention is to provide a resist underlayer film forming composition containing a polymer resin.
- It may also be an organic group having a structure in which two or more aromatic rings are connected by a divalent linking group such as an alkylene group.
- Non-aromatic polycyclic refers to a polycyclic hydrocarbon that does not belong to the aromatic group, and is typically a polycyclic alicyclic compound.
- Aliphatic polycycles may include aliphatic heteropolycycles (at least one of the monocycles constituting the polycycle is an aliphatic heterocycle), and even if they contain unsaturated bonds as long as they do not belong to aromatic compounds You can also call it ⁇ good''. Includes non-aromatic bicyclic rings, non-aromatic tricyclic rings, and non-aromatic tetracyclic rings.
- R and R' in formula (II) when at least one of R and R' in formula (II) is an aromatic ring, such an aromatic ring and another unit structure B are bonded, and at the same time, the unit When bonded to the aromatic ring of structure A, it may replace at least a portion of composite unit structure AB as one unit structure C equivalent to composite unit structure AB. Therefore, such a unit structure C may be included in a unit structure including the structure represented by formula (II).
- the other bonding arm of formula (II) may be bonded to, for example, a polymer terminal group or bonded to an aromatic ring in another polymer chain to form a crosslink.
- unit structure B forms a covalent bond with the polymer end group.
- Such polymer terminal groups may or may not be aromatic rings derived from unit structure A.
- an aromatic ring residue having 6 to 30 carbon atoms which may have a substituent, an unsaturated hydrocarbon group having 1 to 10 carbon atoms which may have a substituent, Examples include hydroxyl group and hydrogen atom.
- the resist underlayer film forming composition [7] which is an embodiment of the present invention, onto a semiconductor substrate having a portion with a step and a portion without a step (a so-called step substrate), and baking it, It is possible to reduce the level difference between the part having the level difference and the part not having the level difference.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Polymers & Plastics (AREA)
- Architecture (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Materials For Photolithography (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202380031323.4A CN118974135A (zh) | 2022-03-28 | 2023-03-20 | 自交联性聚合物及抗蚀剂下层膜形成用组合物 |
| JP2024511865A JPWO2023189799A1 (https=) | 2022-03-28 | 2023-03-20 | |
| US18/850,809 US20260022203A1 (en) | 2022-03-28 | 2023-03-20 | Self-crosslinkable polymer and resist underlayer film forming composition |
| KR1020247035246A KR20240168378A (ko) | 2022-03-28 | 2023-03-20 | 자기가교성 폴리머 및 레지스트 하층막 형성 조성물 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-051966 | 2022-03-28 | ||
| JP2022051966 | 2022-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023189799A1 true WO2023189799A1 (ja) | 2023-10-05 |
Family
ID=88201087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2023/010815 Ceased WO2023189799A1 (ja) | 2022-03-28 | 2023-03-20 | 自己架橋性ポリマー及びレジスト下層膜形成組成物 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20260022203A1 (https=) |
| JP (1) | JPWO2023189799A1 (https=) |
| KR (1) | KR20240168378A (https=) |
| CN (1) | CN118974135A (https=) |
| TW (1) | TW202406971A (https=) |
| WO (1) | WO2023189799A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025095106A1 (ja) * | 2023-11-02 | 2025-05-08 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140227887A1 (en) * | 2011-09-06 | 2014-08-14 | Dongjin Semichem Co., Ltd. | Phenol-based self-crosslinking polymer and resist underlayer film composition including same |
| JP2019041059A (ja) * | 2017-08-28 | 2019-03-14 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
| JP2019044022A (ja) * | 2017-08-30 | 2019-03-22 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
| CN110041345A (zh) * | 2019-05-10 | 2019-07-23 | 福建泓光半导体材料有限公司 | 一种抗蚀剂下层膜单体和组合物及图案形成方法 |
| JP2021105703A (ja) * | 2020-06-01 | 2021-07-26 | 日産化学株式会社 | イオン液体を含むレジスト下層膜形成組成物 |
-
2023
- 2023-03-20 KR KR1020247035246A patent/KR20240168378A/ko active Pending
- 2023-03-20 US US18/850,809 patent/US20260022203A1/en active Pending
- 2023-03-20 CN CN202380031323.4A patent/CN118974135A/zh active Pending
- 2023-03-20 WO PCT/JP2023/010815 patent/WO2023189799A1/ja not_active Ceased
- 2023-03-20 JP JP2024511865A patent/JPWO2023189799A1/ja active Pending
- 2023-03-23 TW TW112110902A patent/TW202406971A/zh unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140227887A1 (en) * | 2011-09-06 | 2014-08-14 | Dongjin Semichem Co., Ltd. | Phenol-based self-crosslinking polymer and resist underlayer film composition including same |
| JP2019041059A (ja) * | 2017-08-28 | 2019-03-14 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
| JP2019044022A (ja) * | 2017-08-30 | 2019-03-22 | 信越化学工業株式会社 | 有機膜形成用組成物、半導体装置製造用基板、有機膜の形成方法、パターン形成方法、及び重合体 |
| CN110041345A (zh) * | 2019-05-10 | 2019-07-23 | 福建泓光半导体材料有限公司 | 一种抗蚀剂下层膜单体和组合物及图案形成方法 |
| JP2021105703A (ja) * | 2020-06-01 | 2021-07-26 | 日産化学株式会社 | イオン液体を含むレジスト下層膜形成組成物 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025095106A1 (ja) * | 2023-11-02 | 2025-05-08 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20240168378A (ko) | 2024-11-29 |
| TW202406971A (zh) | 2024-02-16 |
| US20260022203A1 (en) | 2026-01-22 |
| CN118974135A (zh) | 2024-11-15 |
| JPWO2023189799A1 (https=) | 2023-10-05 |
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