WO2023189153A1

WO2023189153A1 - Method for manufacturing optical semiconductor package

Info

Publication number: WO2023189153A1
Application number: PCT/JP2023/007678
Authority: WO
Inventors: 竜大小松; 勝森下; 信吾島井; 陽祐諏訪; Nao INOUE (井上直)
Original assignee: 浜松ホトニクス株式会社
Priority date: 2022-03-30
Filing date: 2023-03-01
Publication date: 2023-10-05
Also published as: JP2023147595A; TW202343818A

Abstract

This method for manufacturing an optical semiconductor package comprises: a first step for temporarily bonding a light reception element and a first end of a metal pillar to a substrate; a second step for forming on the substrate a mold resin covering the light reception element and the metal pillar; a third step for polishing or grinding the mold resin from the side facing a second surface of the light reception element, to expose the second surface of the light reception element and a second end of the metal pillar; a fourth step for forming a first wiring layer on the second surface of the light reception element and on an end surface of the mold resin; a fifth step for separating the substrate from the light reception element, the metal pillar, and the mold resin; and a sixth step for, after the fifth step, forming a second wiring layer on the side, with respect to the light reception element and the mold resin, opposite to the side on which the first wiring layer is positioned.

Description

Manufacturing method of optical semiconductor package

The present disclosure relates to a method for manufacturing an optical semiconductor package.

Patent Document 1 discloses a method for manufacturing a semiconductor package including a light receiving element. In the manufacturing method disclosed in Patent Document 1, a connection wiring including a columnar electrode is formed on a glass substrate, and a light receiving element (a silicon substrate provided with a photoelectric conversion device region (light receiving part)) is formed on the connection wiring. is mounted and a first sealing film (underfill) made of resin is filled between the light receiving element and the glass substrate, and then the entire upper surface of the glass substrate is further covered with a second sealing film made of resin.

Patent No. 4126389

In the above manufacturing method, since the light-receiving section is covered with the first sealing film, there is a risk that the light-receiving sensitivity may decrease. In addition, since the interface between the first sealing film and the second sealing film is in contact with the connection wiring, the thermal expansion coefficient difference between the first sealing film and the second sealing film, etc. Stress is concentrated on the connection wiring, and there is a risk that the connection wiring may be damaged. As described above, the above manufacturing method has room for improvement in terms of reliability of the semiconductor package.

An object of the present disclosure is to provide a method for manufacturing an optical semiconductor package that can improve reliability.

A method for manufacturing an optical semiconductor package according to one aspect of the present disclosure includes a light receiving element having a first surface provided with a light receiving portion and an electrode terminal electrically connected to the light receiving portion, and a first end of a columnar metal member. A first step of temporarily bonding the light-receiving element to the substrate such that the first surface faces the substrate; and a first step of temporarily bonding the light-receiving element and the metal member to the substrate; The second surface of the light receiving element and the first surface of the metal member are formed by polishing or grinding the resin part from the side opposite to the second surface of the light receiving element, which is opposite to the first surface of the light receiving element. A third step of exposing the second end opposite to the end, and electrically exposing the second end on the second surface of the light receiving element and on the end surface of the resin part continuous with the second surface. A fourth step of forming a first wiring layer including the first metal wiring to be connected; a fifth step of separating the substrate from the light receiving element, the metal member, and the resin part; and after the fifth step, the light receiving element and a sixth step of forming a second wiring layer including a second metal wiring electrically connecting the first end portion and the electrode terminal on a side opposite to the side where the first wiring layer is located with respect to the resin part; ,including.

In the above manufacturing method, in the first step, the light receiving element is temporarily bonded to the substrate so that no gap is formed between the substrate and the light receiving element. Thereby, in the second step, it is possible to prevent the resin from flowing between the light receiving element and the substrate, that is, to prevent the resin portion from being formed at a position facing the light receiving portion. As a result, it is possible to avoid a decrease in light-receiving sensitivity due to the light-receiving part being covered with the resin part. Further, by temporarily bonding the light receiving element and the metal member to the substrate, it is possible to stably and accurately perform the second step in a state in which each member is stably fixed. As described above, according to the above manufacturing method, an optical semiconductor package can be manufactured with high reliability.

The first step includes positioning and supporting the metal member with the first end exposed by the support member, and positioning the substrate with respect to the first end of the metal member supported by the support member. The step of temporarily joining the first end portion to the substrate by bringing the temporary joining surfaces into contact may be included. According to the above configuration, the metal member can be temporarily bonded to the substrate by a relatively simple operation of bringing the temporary bonding surface of the substrate into contact with the metal member positioned and supported by the support member.

The support member may include a plate-like member in which a through hole having a width larger than the width of the metal member is formed, and a support substrate on which the second end portion is placed and supported, and the metal member may be inserted into and positioned through the through hole of the plate-shaped member and supported by the support substrate, and in a state where the metal member is supported by the support member, the first end portion is supported with respect to the plate-shaped member. It may protrude on the side opposite to the substrate side. According to the above configuration, since the metal member is supported by the support member in a state where the first end of the metal member protrudes beyond the plate-like member, when the temporary bonding surface of the substrate is brought into contact with the first end, , it is possible to prevent the temporarily bonded surface of the substrate from coming into contact with the plate member. That is, it is possible to accurately prevent the temporarily bonded surface of the substrate from sticking to the plate-like member.

The metal member may include a shaft portion including the second end portion and a flange portion including the first end portion and formed wider than the shaft portion, and the supporting member may have a width wider than the shaft portion. The metal member may be a plate-like member in which a through hole having a width smaller than the width of the flange portion is formed. may be supported by the support member by coming into contact with the peripheral edge of the through hole of the support member. According to the above configuration, it is possible to support the flange portion by hooking it onto the peripheral edge of the through hole of the plate-shaped member. That is, since a support substrate for supporting the second end is not required, the support member can be simplified. Further, by providing the flange portion, the posture (verticality) of the metal member erected on the substrate can be more stabilized.

In the fourth step, the first wiring layer may be formed such that the width of the portion of the first metal wiring connected to the second end is larger than the width of the second end of the metal member. According to the above configuration, it is possible to absorb the positional shift of the metal member that may occur in the second step (resin portion forming step). That is, by increasing the wiring width of the first metal wiring, even if the position of the metal member is slightly shifted in the second step, the first metal wiring and the metal member (second end) can be brought into contact more reliably. be able to.

In the fourth step, the first wiring layer may be formed such that the width of the portion of the first metal wiring connected to the second end is smaller than the width of the second end of the metal member. According to the above configuration, the first metal wiring can be formed without being influenced by the size (width) of the metal member. For example, if the width of the first metal wiring is made larger than the width of the metal member when the width of the metal member (second end portion) is relatively large, the first metal wiring may be connected to other wiring provided in the first wiring layer. A problem may arise in that it is easy to interfere with the According to the above configuration, occurrence of such a problem can be avoided.

In the sixth step, the second wiring layer may be formed such that the wiring width of the portion of the second metal wiring connected to the first end is larger than the width of the first end of the metal member. According to the above configuration, it is possible to absorb the positional shift of the metal member that may occur in the second step (resin portion forming step). That is, by increasing the wiring width of the second metal wiring, even if the position of the metal member is slightly shifted in the second step, the second metal wiring and the metal member (first end) can be brought into contact more reliably. be able to.

In the sixth step, the second wiring layer may be formed such that the wiring width of the portion of the second metal wiring connected to the first end is smaller than the width of the first end of the metal member. According to the above configuration, the second metal wiring can be formed without being influenced by the size (width) of the metal member. For example, when the width of the metal member (first end portion) is relatively large, if the width of the second metal wiring is made larger than the width of the metal member, the second metal wiring may be connected to other wiring provided in the second wiring layer. A problem may arise in that it is easy to interfere with the According to the above configuration, occurrence of such a problem can be avoided.

The fifth step may be performed at least after the third step. Further, the fourth step may be performed after the third step, and the fifth step may be performed after the fourth step. According to the above configuration, by keeping the substrate attached in the third step (or the third step and the fourth step), the third step (or the third step and the fourth step) is performed with the support stability of each member increased. 3 and 4) can be performed with high reliability.

The light receiving element may have a light receiving surface on the first surface. According to the above configuration, an optical semiconductor package in which the surface of the front-illuminated light receiving element is the first surface can be manufactured with high reliability.

A method for manufacturing an optical semiconductor package according to another aspect of the present disclosure includes a first step of forming, on a substrate, a first wiring layer that includes a first metal wiring and is provided with an opening that exposes the substrate; 1. A second step of forming a metal member connected to the first end of the metal wiring and protruding from the first wiring layer to the side opposite to the substrate side, and a light receiving section and an electrode terminal electrically connected to the light receiving section. A third step of preparing a light-receiving element having a first surface provided with a fourth step of arranging the light receiving element such that the light receiving element is disposed at a position facing the opening and an internal space is formed between the substrate and the light receiving element; and the light receiving element, the metal member, and the first wiring layer are arranged. a fifth step of forming a resin part that covers and fills the internal space and is transparent to the light to be detected by the light receiving element, and from the side facing the second surface opposite to the first surface of the light receiving element; a sixth step of exposing the second surface and the end of the metal member on the side opposite to the side connected to the first metal wiring by polishing or grinding the resin part; and on the second surface of the light receiving element; and a seventh step of forming a second wiring layer including a second metal wiring electrically connected to the end of the metal member on the end surface of the resin part continuous with the second surface, and the first wiring layer and the resin. and an eighth step of separating the substrate from the part.

In the above manufacturing method, the resin part covers the light receiving part by filling the internal space between the light receiving element and the substrate in the fifth step, but the resin part is not detected by the light receiving part. Since the resin part has transparency to light, a decrease in light-receiving sensitivity caused by the resin part covering the light-receiving part is suppressed. Furthermore, in the fifth step, a resin portion is formed by a single resin material, filling the internal space between the light receiving element and the substrate and covering each member (the light receiving element, the metal member, and the first wiring layer). can be formed. This reduces reliability due to the coexistence of two types of resin parts (for example, two resin parts formed from different materials or at different times) (for example, due to differences in thermal expansion coefficients between the two resin parts). (damage to metal wiring due to stress caused by stress, etc.) can be avoided. As described above, according to the above manufacturing method, an optical semiconductor package can be manufactured with high reliability.

The eighth step may be performed at least after the sixth step. Further, the seventh step may be performed after the sixth step, and the eighth step may be performed after the seventh step. According to the above configuration, by keeping the substrate attached in the sixth step (or the sixth step and the seventh step), the sixth step (or the sixth step and the seventh step) is performed with the support stability of each member increased. 6 and 7) can be performed with high reliability.

According to the present disclosure, it is possible to provide a method for manufacturing an optical semiconductor package that can improve reliability.

FIG. 1 is a cross-sectional view of the optical semiconductor package of the first embodiment. FIG. 2 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 3 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 4 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 5 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 6 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 7 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 1. FIG. 8 is a cross-sectional view of the optical semiconductor package of the second embodiment. FIG. 9 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 8. FIG. 10 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 8. FIG. 11 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 8. FIG. 12 is a cross-sectional view of the optical semiconductor package of the third embodiment. FIG. 13 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 12. FIG. 14 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 12. FIG. 15 is a diagram showing an example of the manufacturing process of the optical semiconductor package of FIG. 12. FIG. 16 is a diagram showing a modification of the method for manufacturing the optical semiconductor package shown in FIG.

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In each figure, the same or corresponding parts are denoted by the same reference numerals, and redundant explanations will be omitted. Note that in the drawings, some portions are exaggerated in order to clearly explain characteristic portions of the embodiments. Therefore, the dimensional ratios in the drawings may differ from the actual dimensional ratios.

[First embodiment]
(Structure of optical semiconductor package)
As shown in FIG. 1, the optical semiconductor package 1A of the first embodiment includes a light receiving element 2, a mold resin 3 (resin part), a wiring layer 4 (first wiring layer), and a wiring layer 5 (second wiring layer). wiring layer) and a metal pillar 6 (metal member). The optical semiconductor package 1A is a type of FOWLP (Fan Out Wafer Level Package)/FOPLP (Fan Out Panel Level Package).

The light receiving element 2 is a semiconductor chip having a light receiving section 21, and is formed into a rectangular plate shape. The light receiving element 2 has a first surface 2a and a second surface 2b. In FIG. 1, the direction in which the first surface 2a and the second surface 2b face each other is expressed as the Z-axis direction, and the direction along one side of the light-receiving element 2 when viewed from the Z-axis direction is expressed as the X-axis direction. The direction along the other side (the side perpendicular to the above-mentioned one side) of the light receiving element 2 when viewed from the Z-axis direction is expressed as the Y-axis direction.

A light receiving section 21 and a plurality of (two in this embodiment) electrode terminals 22 electrically connected to the light receiving section 21 are provided on the first surface 2a. In this embodiment, as an example, one light receiving section 21 is provided at approximately the center of the first surface 2a when viewed from the Z-axis direction, but a plurality of light receiving sections 21 are provided on the first surface 2a. Good too. In this case, the plurality of light receiving sections 21 may be arranged one-dimensionally or two-dimensionally, for example, when viewed from the Z-axis direction. The light receiving section 21 is arranged at a position along the first surface. That is, the light receiving element 2 has a light receiving surface on the first surface 2a. More specifically, the portion of the first surface 2a that faces the light receiving section 21 functions as a light receiving surface. In the example of FIG. 1, the light receiving section 21 is embedded in the light receiving element 2 so that the light incident surface (the surface on the first surface 2a side) of the light receiving section 21 is substantially flush with the first surface 2a. Examples of the light receiving section 21 include a Si photodiode (SiPD), a Si avalanche photodiode (SiAPD), and a Si-MPPC (Multi-Pixel Photon Counter). The two electrode terminals 22 are provided so as to protrude above the first surface 2a.

An insulating layer 23 is provided on the first surface 2a. The insulating layer 23 is provided so as to surround a plurality of (two in this embodiment) electrode terminals 22 provided on the first surface 2a. Openings 23a are formed in the insulating layer 23 to expose each electrode terminal 22. The insulating layer 23 may be formed of an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide.

The mold resin 3 seals the side surface of the light receiving element 2 so as to surround the light receiving element 2 when viewed from the Z-axis direction. The mold resin 3 also covers the metal pillar 6. The mold resin 3 may be made of, for example, epoxy resin. The mold resin 3 has an end surface 3a formed flush with the surface of the insulating layer 23, and an end surface 3b formed flush with the second surface 2b of the light receiving element 2.

The wiring layer 4 is provided on the second surface 2b side of the light receiving element 2, on the second surface 2b of the light receiving element 2, and on the end surface 3b of the molded resin 3 continuous with the second surface 2b. The wiring layer 4 is a rewiring layer including an insulating layer 41 and a metal wiring 42 (first metal wiring). The insulating layer 41 may be formed of, for example, an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide. The metal wiring 42 is, for example, a copper (Cu) wiring.

An opening 41a is provided in a portion of the insulating layer 41 that overlaps with the metal pillar 6 in the Z-axis direction. A metal wiring 42 electrically connected to the end 6b (second end) of the metal pillar 6 on the wiring layer 4 side is provided in the opening 41a. The width of the opening 41a is made larger than the width of the end portion 6b of the metal pillar 6. As a result, the wiring width w11 of the portion of the metal wiring 42 connected to the end 6b is larger than the width w12 of the end 6b of the metal pillar 6.

A plated portion 43 is provided at the outer end of the metal wiring 42 (the end located on the opposite side from the metal pillar 6 in the Z-axis direction). The plated portion 43 is a portion that is bonded to a printed circuit board or the like using, for example, solder. The plated portion 43 is, for example, two-layer plating of nickel and gold (Ni/Au plating).

The wiring layer 5 is provided on the side opposite to the side where the wiring layer 4 is located with respect to the light receiving element 2 and the mold resin 3. That is, the wiring layer 5 is provided on the insulating layer 23 and on the end surface 3a of the molded resin 3 on the first surface 2a side of the light receiving element 2. The wiring layer 5 is a rewiring layer including an insulating layer 51 and a metal wiring 52 (second metal wiring). The insulating layer 51 may be formed of, for example, an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide. The metal wiring 52 is, for example, a copper (Cu) wiring.

An opening 51a is provided in a portion of the insulating layer 51 that overlaps with the metal pillar 6 in the Z-axis direction. A metal wiring 52 electrically connected to the end 6a (first end) of the metal pillar 6 on the wiring layer 5 side is provided in the opening 51a. The width of the opening 51a is made larger than the width of the end portion 6a of the metal pillar 6. As a result, the wiring width w21 of the portion of the metal wiring 52 connected to the end 6a is larger than the width w22 of the end 6a of the metal pillar 6.

An opening 51b is provided in a portion of the insulating layer 51 that overlaps with the light receiving section 21 in the Z-axis direction. That is, the insulating layer 51 is formed so as not to cover the light receiving section 21 in the Z-axis direction.

The metal wiring 52 electrically connects the end 6a of the metal pillar 6 and the electrode terminal 22 of the light receiving element 2. That is, the light receiving element 2 (electrode terminal 22) is electrically connected to the plating portion 43 via the metal wiring 52, the metal pillar 6, and the metal wiring 42.

The metal pillar 6 is a metal member formed into a columnar shape. The metal pillar 6 is made of copper, for example. The metal pillar 6 is, for example, a so-called copper pillar or a copper post.

In this embodiment, two electrode terminals 22, two metal wirings 52, two metal pillars 6, and two metal wirings 42 are provided. More specifically, a set of electrode terminals 22, metal wiring 52, metal pillar 6, and metal wiring 42, which are electrically connected to each other, is arranged on each side of the light receiving section 21 when viewed from the Y-axis direction. It is provided. Note that when a plurality of light receiving sections 21 are provided as described above, the number of electrode terminals 22 (that is, the number of the above-mentioned groups) may vary depending on the number of light receiving sections 21.

(Method for manufacturing optical semiconductor package)
An example of the manufacturing process of the optical semiconductor package 1A will be described with reference to FIGS. 2 to 7. In this embodiment, the optical semiconductor package 1A is manufactured by a CoW (Chip on Wafer) method or a CoP (Chip on Panel) method.

First, as shown in FIG. 2, the light receiving element 2 and the end portion 6a of the metal pillar 6 are connected to a temporary bonding surface 50a (for example, a surface coated with adhesive for temporary bonding) of a substrate 50 that is a temporary bonding member. are temporarily joined (first step). That is, the light receiving element 2 and the metal pillar 6 are temporarily bonded to the substrate 50 in such a manner that they can be removed later. The light receiving element 2 is temporarily bonded to the substrate 50 such that the first surface 2a faces the substrate 50. In this embodiment, the insulating layer 23 provided on the first surface 2a of the light receiving element 2 is temporarily bonded to the substrate 50.

The substrate 50 is, for example, a silicon wafer, a glass wafer, a SUS carrier, or the like. On the substrate, a plurality of unit regions corresponding to one optical semiconductor package 1A are formed in a grid (two-dimensional shape). 2 to 7 represent the state of one unit area in each manufacturing process.

An example of a method for temporarily bonding the metal pillar 6 to the substrate 50 will be described with reference to FIG. 3. In this example, a support member 100 is used that positions each metal pillar 6 with the ends 6a of a plurality (number of unit areas x number of metal pillars included in each unit area) of the metal pillars 6 exposed. Specifically, the step of temporarily joining the metal pillar 6 to the substrate 50 in the first step is a step of positioning and supporting the metal pillar 6 with the end portion 6a of the metal pillar 6 exposed using the support member 100. and a step of temporarily joining the end portion 6a of the metal pillar 6 to the substrate 50 by bringing the temporary joining surface 50a of the substrate 50 into contact with the end portion 6a of the metal pillar 6 supported by the support member 100. ,including. According to the above configuration, the metal pillar 6 can be temporarily bonded to the substrate 50 by a relatively simple operation of bringing the temporary bonding surface 50a of the substrate 50 into contact with the metal pillar 6 positioned and supported by the support member 100. can.

First, as shown in FIG. 3A, the metal pillar 6 is positioned and supported by the support member 100 with the end 6a of the metal pillar 6 exposed. In this example, the support member 100 includes a plate-like member 101 in which a through hole 101a having a width larger than the width of the metal pillar 6 is formed, and a support substrate 102 on which the end portion 6b of the metal pillar 6 is placed and supported. It has . Note that the size of the through hole 101a is adjusted to a size that allows the metal pillar 6 to be inserted therein and allows the lateral positional deviation of the metal pillar 6 to be kept within an allowable error range. Each metal pillar 6 is inserted into the through hole 101a of the plate member 101 and positioned, and is supported by the support substrate 102. When the metal pillar 6 is supported by the support member 100, the end portion 6a protrudes from the plate member 101 on the side opposite to the support substrate 102 side. Note that the plate-like member 101 and the support substrate 102 may be formed separately as shown in FIG. 3, or may be formed integrally. Further, a space (gap) may be provided between the plate member 101 and the support substrate 102 as shown in FIG. 3, or such a space may not be provided.

Subsequently, as shown in FIG. 3B, the temporary bonding surface 50a of the substrate 50 is brought into contact with the end 6a of the metal pillar 6 supported by the support member 100. Thereby, as shown in FIG. 3C, the end portion 6a of the metal pillar 6 is temporarily bonded to the temporary bonding surface 50a of the substrate 50.

According to the above configuration, since the metal pillar 6 is supported by the support member 100 with the end 6a of the metal pillar 6 protruding beyond the plate member 101, the temporary bonding surface 50a of the substrate 50 is attached to the end 6a. When making contact, the temporary bonding surface 50a of the substrate 50 can be prevented from coming into contact with the plate member 101. That is, it is possible to accurately prevent the temporary bonding surface 50a of the substrate 50 from sticking to the plate member 101.

Here, as shown in FIG. 4, a metal pillar 6A having a flange portion 62 may be used instead of the metal pillar 6. The metal pillar 6A has a shaft portion 61 including an end portion 6b, and a flange portion 62 including the end portion 6a and formed wider than the shaft portion 61. The flange portion 62 is a portion extending outward in a direction perpendicular to the axial direction of the shaft portion 61 at the end portion 6a. The shape of the flange portion 62 when viewed from the axial direction is, for example, circular. The through hole 101a of the plate member 101 is set to have a width larger than the width of the shaft portion 61 and smaller than the width of the flange portion 62. In the metal pillar 6A, the shaft portion 61 is inserted into the through hole 101a, and the inner surface 62a of the flange portion 62 on the end 6b side abuts the peripheral edge of the through hole 101a of the plate member 101, so that the metal pillar 6A is inserted into the plate member 101. Supported. In this state, the end 6a of the metal pillar 6A can be temporarily joined to the substrate 50 by bringing the temporary joining surface 50a of the substrate 50 into contact with the end 6a of the metal pillar 6A. According to the above configuration, the flange portion 62 can be supported by being hooked onto the peripheral edge of the through hole 101a of the plate member 101, so the support substrate 102 for supporting the end portion 6b is not required. As a result, the support member 100 can be simplified. Further, by providing the flange portion 62, the posture (verticality) of the metal pillar 6A erected on the substrate 50 can be more stabilized.

However, the method for forming the metal pillars 6 on the substrate 50 is not limited to the above method. For example, the metal pillar 6 may be formed on the substrate 50 by transferring the metal pillar 6 to a designated position on the substrate 50 using a transfer device configured to be able to transfer the metal pillar 6. According to the above method, by controlling the transfer device, the metal pillars 6 can be placed at any position on the substrate 50 with high precision. In addition, by performing semiconductor pre-processes (seed layer formation, photolithography, electrolytic Cu plating, resist removal, seed layer etching, etc.) for forming a metal pattern (metal pillar 6) on the substrate 50, A metal pillar 6 may be formed on the surface. The above method also allows the pattern (position and shape) of the metal pillars 6 to be controlled with high precision. Alternatively, a metal pad is formed on the substrate 50, wire bonding is performed so that a wire extending vertically is formed on the metal pad, and the wire bonded on the metal pad is cut to an appropriate length. A metal pillar 6 (that is, a structure combining a metal pad and a wire) may be formed by this method. According to the above method, a wire (metal pillar 6) having an arbitrary diameter and length can be formed by adjusting the bonding conditions (parameters).

Subsequently, as shown in FIG. 5A, a mold resin 3 is formed on the substrate 50 to cover the light receiving elements 2 and metal pillars 6 arranged in each unit area (second step). Focusing on one unit area, the mold resin 3 covers the second surface 2b and side surfaces of the light receiving element 2, and also covers the entire portion of each metal pillar 6 except for the end portion 6a (end portion 6b and side surface). It is formed like this.

Subsequently, as shown in FIG. 5B, the mold resin 3 is polished or ground from the side facing the second surface 2b of the light-receiving element 2 (i.e., the end surface 3b side), so that the light-receiving element 2 is polished. The second surface 2b and the end portion 6b of the metal pillar 6 are exposed (third step). "Polishing or grinding" includes cases in which only one of polishing and grinding is performed, as well as cases in which both polishing and grinding are performed. At this time, in each unit area, the end surface 3b of the molded resin 3 and the second surface 2b of the light-receiving element 2 may also be polished or ground. Similarly, the end portion 6b of the metal pillar 6 may also be polished or ground. That is, after the second surface 2b of the light receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by polishing or grinding the end surface 3b of the molded resin 3, the end surface 3b and the second surface 2b of the molded resin 3 are further exposed. Alternatively, the process of polishing or grinding the end portion 6b at once may be continued. As a result, as shown in FIG. 5B, the light receiving element 2 is made thinner, and the second surface 2b of the light receiving element 2 and the end portion 6b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molded resin 3 become substantially flush with each other.

Subsequently, as shown in FIG. 6A, the wiring layer 4 is formed on the second surface 2b of the light receiving element 2 and on the end surface 3b of the molded resin 3 that is continuous with the second surface 2b. In this embodiment, an insulating layer 41 and metal wiring 42 are formed on the second surface 2b of the light receiving element 2, the end 6b of the metal pillar 6, and the end surface 3b of the molded resin 3.

For example, by patterning the insulating layer 41 and forming the pattern of the metal wiring 42 from the state shown in FIG. 5B using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), The structure shown in (A) is obtained. The wiring layer 4 is formed so that the wiring width of the portion of the metal wiring 42 connected to the end portion 6b is larger than the width of the end portion 6b. More specifically, the width of the opening 41a of the insulating layer 41 is formed to be larger than the width of the end 6b of the metal pillar 6. As a result, the wiring width w11 (see FIG. 1) of the portion of the metal wiring 42 connected to the end 6b is formed larger than the width w12 (see FIG. 1) of the end 6b of the metal pillar 6. According to the above configuration, it is possible to absorb the positional shift of the metal pillar 6 that may occur in the second step (the step of forming the molded resin 3). That is, by increasing the wiring width of the metal wiring 42, even if the position of the metal pillar 6 is slightly shifted due to the inflow of the molded resin 3 in the second step, the metal wiring 42 and the metal pillar 6 (end portion 6b) can be easily connected. Contact can be made more reliably.

Note that, contrary to the above, the wiring layer 4 may be formed such that the wiring width of the portion of the metal wiring 42 connected to the end 6b is smaller than the width of the end 6b of the metal pillar 6 ( (See second embodiment described later). In this case, the metal wiring 42 can be formed without being affected by the size (width) of the metal pillar 6. For example, if the width of the metal wiring 42 is made larger than the width of the metal pillar 6 when the width of the metal pillar 6 (end portion 6b) is relatively large, the metal wiring 42 will interfere with other wiring provided in the wiring layer 4. The problem may arise that it becomes easier to do so. According to the above configuration, occurrence of such a problem can be avoided.

Subsequently, as shown in FIG. 6(B), the substrate 50 is separated from the light receiving element 2, metal pillar 6, and mold resin 3 (fifth step). Further, the processing surface (the surface to be processed) changes from the surface on the second surface 2b side of the light receiving element 2 to the surface on the first surface 2a side of the light receiving element 2 (that is, the surface exposed after the substrate 50 is separated). will be changed to

Subsequently, after the substrate 50 is separated from the light receiving element 2, metal pillar 6, and mold resin 3 as described above (that is, after the fifth step), as shown in FIG. 7(A), , the wiring layer 5 is formed on the side opposite to the side where the wiring layer 4 is located with respect to the light receiving element 2 and the mold resin 3 (sixth step). In this embodiment, the insulating layer 51 and the metal wiring 52 are formed on the portion of the insulating layer 23 that does not overlap with the light receiving section 21, the end portion 6a of the metal pillar 6, and the end surface 3a of the molded resin 3. Further, by performing electroless plating on the outer end portion of the metal wiring 42, a plated portion 43 is formed on the surface of the outer end portion.

For example, by patterning the insulating layer 51 and forming the pattern of the metal wiring 52 from the state shown in FIG. 6(B) using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), The structure shown in (A) is obtained. The wiring layer 5 is formed so that the wiring width of the portion of the metal wiring 52 connected to the end portion 6a is larger than the width of the end portion 6a. More specifically, the width of the opening 51a of the insulating layer 51 is larger than the width of the end 6a of the metal pillar 6. As a result, the wiring width w21 (see FIG. 1) of the portion of the metal wiring 52 connected to the end 6a is formed larger than the width w22 (see FIG. 1) of the end 6a of the metal pillar 6. According to the above configuration, it is possible to absorb the positional shift of the metal pillar 6 that may occur in the second step (the step of forming the molded resin 3). That is, by increasing the wiring width of the metal wiring 52, even if the position of the metal pillar 6 is slightly shifted due to the inflow of the molded resin 3 in the second step, the metal wiring 52 and the metal pillar 6 (end portion 6a) can be easily connected. Contact can be made more reliably.

Note that, contrary to the above, the wiring layer 5 may be formed such that the wiring width of the portion of the metal wiring 52 connected to the end 6a is smaller than the width of the end 6a of the metal pillar 6 ( (See second embodiment described later). In this case, the metal wiring 52 can be formed without being affected by the size (width) of the metal pillar 6. For example, if the width of the metal wiring 52 is made larger than the width of the metal pillar 6 when the width of the metal pillar 6 (end portion 6a) is relatively large, the metal wiring 52 will interfere with other wiring provided in the wiring layer 5. The problem may arise that it becomes easier to do so. According to the above configuration, occurrence of such a problem can be avoided.

Subsequently, as shown in FIG. 7(B), dicing is performed along the boundary line L between the unit areas. Thereby, a plurality of individualized optical semiconductor packages 1A are obtained.

(effect)
In the method for manufacturing the optical semiconductor package 1A described above, in the first step, the light receiving element 2 is temporarily bonded to the substrate 50 so that no gap is formed between the substrate 50 and the light receiving element 2. Thereby, in the second step, it is possible to prevent the mold resin 3 from flowing between the light receiving element 2 and the substrate 50, that is, from forming the mold resin 3 at a position facing the light receiving section 21. As a result, it is possible to avoid a decrease in light receiving sensitivity due to the light receiving section 21 being covered with the mold resin 3. Further, by temporarily bonding the light receiving element 2 and the metal pillar 6 to the substrate 50, it becomes possible to carry out the second step stably and accurately with each member being stably fixed. More specifically, it is possible to suppress the occurrence of warping of the package when the mold resin 3 is cured. As described above, according to the above manufacturing method, the optical semiconductor package 1A can be manufactured with high reliability. Further, the light receiving element 2 has a light receiving surface on the first surface 2a. According to the above configuration, the optical semiconductor package 1A in which the surface of the front-illuminated light receiving element 2 is the first surface 2a can be manufactured with high reliability.

Furthermore, according to the method for manufacturing the optical semiconductor package 1A described above, the following effects are also achieved. In other words, when the light receiving element is placed apart from the glass substrate using bump connection as in the method disclosed in Patent Document 1, the light receiving element is placed with respect to the glass substrate due to variations in the amount of bumps. As a result of the tilting, optical axis misalignment may occur, resulting in a decrease in uniformity. On the other hand, according to the method for manufacturing the optical semiconductor package 1A described above, since the light receiving element 2 (insulating layer 23) is brought into close contact with the substrate 50, the light receiving element 2 is prevented from being arranged at an angle with respect to the substrate 50. This can avoid the problems mentioned above.

Furthermore, in the method disclosed in Patent Document 1, in order to seal an underfill between the glass substrate and the light receiving element, it is necessary to arrange the light receiving element at a certain distance from the glass substrate. In this case, since the light receiving element is located at the back of the package, the wiring layer formed on the glass substrate has a structure that blocks the field of view of the light receiving part, and the active area of the light receiving element becomes narrow. According to the method for manufacturing the optical semiconductor package 1A described above, the occurrence of such problems can also be avoided.

Furthermore, with the method disclosed in Patent Document 1, voids may occur in the underfill sealed between the glass substrate and the light receiving element, and special processing may be required to eliminate the voids. However, according to the method for manufacturing the optical semiconductor package 1A described above, since no underfill is formed at a position facing the light receiving element 2 (light receiving section 21), the above problem can also be avoided.

(Modified example)
Optical components such as glass, a bandpass filter, and a lens may be attached to a position on the insulating layer 23 facing the light receiving section 21 . The step of attaching such an optical component may be performed, for example, after the step of forming the wiring layer 5 (sixth step). Alternatively, the optical components described above may be attached to the light receiving element 2 in advance before the manufacturing process of this embodiment is performed. Further, the step of separating (peeling) the substrate 50 from the light receiving element 2, etc. (fifth step) may be performed at any timing between the completion of the second step and the start of the sixth step. good. For example, substrate 50 may be removed immediately after the second step is completed. Alternatively, the fifth step may be performed at least after the third step. For example, the fourth step may be performed after the third step, and the fifth step may be performed after the fourth step. According to the above configuration, by keeping the substrate 50 attached also in the third step (or the third step and the fourth step), the third step (or The advantage is that the third step and the fourth step) can be carried out with high reliability. In particular, in this embodiment, since the light receiving section 21 is exposed to the outside through the insulating layer 23, by attaching the substrate 50, the light receiving section 21 can be properly protected from external impact etc. in each process. can be protected. Further, when carrying out the sixth step, a substrate (for example, the substrate 50) as a temporary bonding member may be attached on the wiring layer 4 in order to improve the support stability of each member.

[Second embodiment]
(Structure of optical semiconductor package)
As shown in FIG. 8, the optical semiconductor package 1B of the second embodiment is different from the optical semiconductor package 1A in that a transparent mold resin 3B is provided instead of the mold resin 3. Further, in the optical semiconductor package 1B, the end portion 6a of the metal pillar 6 (metal member) is located at a higher position than the upper surface of the insulating layer 23 (the surface opposite to the first surface 2a side), and the end portion 6a of the metal pillar 6 (metal member) It is also different from the optical semiconductor package 1A in that it further includes a metal pillar 7 that connects the electrode terminal 22 to the end 52b on the side opposite to the side connected to the portion 6a. Hereinafter, the parts of the optical semiconductor package 1B that are different from the optical semiconductor package 1A will be described, and the description of the parts of the optical semiconductor package 1B that are similar to the optical semiconductor package 1A will be omitted.

The mold resin 3B is made of a material that is transparent to the light (wavelength) to be detected by the light receiving section 21. The mold resin 3B may be made of, for example, transparent epoxy resin. The mold resin 3B is provided not only on the side surface of the light-receiving element 2 but also on the portion facing the first surface 2a of the light-receiving element 2 (that is, the area on the insulating layer 23), and is provided on the metal pillar 6 and the metal pillar 7. covers the entire side of the The mold resin 3B is also provided inside the opening 51b of the wiring layer 5. That is, the end surface 3a of the molded resin 3B opposite to the end surface 3b (the end surface formed flush with the second surface 2b) is formed flush with the outer surface of the wiring layer 5 (insulating layer 51).

In the optical semiconductor package 1B, the wiring layer 5 (first wiring layer) is separated from the insulating layer 23 in the Z-axis direction. For this reason, a metal pillar 7 is provided for electrically connecting the metal wiring 52 (first metal wiring) and the electrode terminal 22. In the optical semiconductor package 1B, the metal wiring 52 has an end portion 52a (first end portion) located outside in the X-axis direction (a portion that does not overlap with the light-receiving element 2), and an end portion 52a (first end portion) located inside in the X-axis direction (a portion that does not overlap with the light-receiving element 2). and an end portion 52b (a second end portion) disposed at a portion overlapping with the first end portion. The end 52a is connected to the end 6a of the metal pillar 6. The end 52b is connected to the end 7a of the metal pillar 7 (the end on the opposite side to the electrode terminal 22 side). Note that the optical semiconductor package 1B does not necessarily need to include the columnar metal pillar 7. For example, the end portion 52b and the electrode terminal 22 may be connected via a conductive bump. That is, the end portion 52b and the electrode terminal 22 may be electrically connected by some kind of conductive member. Furthermore, by disposing the conductive member between the end portion 52b and the electrode terminal 22, the molded resin 3B can be introduced into the internal space S (see (B) in FIG. 9) in the fifth step described later. It is sufficient that a gap of 1 is formed between the insulating layer 23 and the insulating layer 51.

(Method for manufacturing optical semiconductor package)
An example of the manufacturing process of the optical semiconductor package 1B will be described with reference to FIGS. 9 to 11. In this embodiment, the optical semiconductor package 1B is manufactured by a CoW method or a CoP method. 9 to 11 show the state of one unit area in each manufacturing process. The following description focuses on only one unit area.

First, as shown in FIG. 9A, the wiring layer 5 provided with an opening 51b that exposes the substrate 50 is formed on the substrate 50, which is a temporary bonding member (first step). The wiring layer 5 includes an insulating layer 51 and metal wiring 52. The opening 51b is provided in the insulating layer 51. For example, by patterning the insulating layer 51 and forming the pattern of the metal wiring 52 using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), the wiring layer 5 shown in FIG. It will be done. In this embodiment, the width of the opening 51a of the insulating layer 51 is smaller than the width of the end 6a of the metal pillar 6, and as a result, the width of the opening 51a of the insulating layer 51 is smaller than the width of the end 6a of the metal wiring 52. The wiring width is formed smaller than the width of the end portion 6a of the metal pillar 6. However, similarly to the first embodiment, the width of the portion of the metal wiring 52 connected to the end 6a may be formed to be larger than the width of the end 6a of the metal pillar 6.

Subsequently, as shown in FIG. 9A, a metal pillar 6 is formed which is connected to the end portion 52a of the metal wiring 52 and protrudes from the wiring layer 5 to the side opposite to the substrate 50 side. process). The metal pillar 6 is formed, for example, by plating, solder bump forming, or the like. The metal pillar 6 has an end 6a connected to the end 52a, and an end 6b opposite to the end 6a.

Subsequently, as shown in FIG. 9(B), the light receiving element 2 is prepared (third step). Subsequently, an end 52b of the metal wiring 52 different from the end 52a and the electrode terminal 22 are electrically connected via the metal pillar 7, and the light receiving part 21 is arranged at a position facing the opening 51b. The light receiving element 2 is arranged so that an internal space S is formed between the substrate 50 and the light receiving element 2 (fourth step). The metal pillar 7 has an end 7a connected to the end 52b, and an end 7b opposite to the end 7a. Note that, as described above, the metal pillar 7 may be any conductive member, and may be a conductive bump formed by bump-bonding the end portion 7b and the electrode terminal 22, for example. Here, the upper surface of the insulating layer 51 (the surface opposite to the substrate 50 side) and the lower surface of the insulating layer 23 (the surface facing the substrate 50) are separated, and the gap between the insulating layer 51 and the insulating layer 23 is There is a gap. That is, the internal space S communicates with the outside via the gap. In other words, the interior space S is not a closed space cut off from the outside.

Subsequently, as shown in FIG. 10(A), mold resin 3B is formed (fifth step). As described above, the mold resin 3B is made of a material that is transparent to the light to be detected by the light receiving section 21, and covers the light receiving element 2, the

metal pillars

6, 7, and the wiring layer 5, and also covers the internal space. S (see FIG. 9B).

Subsequently, as shown in FIG. 10(B), the mold resin 3B is polished or ground from the side facing the second surface 2b of the light-receiving element 2 (that is, the end surface 3b side), so that the light-receiving element 2 is polished. The second surface 2b and the end portion 6b of the metal pillar 6 are exposed (sixth step). At this time, in each unit area, the second surface 2b of the light receiving element 2 may be polished or ground together with the end surface 3b of the molded resin 3B. Similarly, the end portion 6b of the metal pillar 6 may also be polished or ground. That is, after the second surface 2b of the light receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by polishing or grinding the end surface 3b of the molded resin 3B, the end surface 3b and the second surface 2b of the molded resin 3B are further exposed. Alternatively, the process of polishing or grinding the end portion 6b at once may be continued. As a result, as shown in FIG. 10(B), the second surface 2b of the light receiving element 2 and the end portion 6b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molded resin 3B become substantially flush with each other.

Subsequently, as shown in FIG. 11A, a wiring layer 4 is formed on the second surface 2b of the light receiving element 2 and on the end surface 3b of the molded resin 3B that is continuous with the second surface 2b ( 7th step). In this embodiment, an insulating layer 41 and metal wiring 42 (second metal wiring) are formed on the second surface 2b of the light receiving element 2, the end 6b of the metal pillar 6, and the end surface 3b of the molded resin 3B. Further, by performing electroless plating on the outer end portion of the metal wiring 42, a plated portion 43 is formed on the surface of the outer end portion.

For example, from the state shown in FIG. 10B, by patterning the insulating layer 41 and forming the pattern of the metal wiring 42 using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), The structure shown in (A) is obtained. In this embodiment, the width of the opening 41a of the insulating layer 41 is smaller than the width of the end 6b of the metal pillar 6, and as a result, the width of the portion of the metal wiring 42 connected to the end 6b is smaller. The wiring width is formed smaller than the width of the end portion 6b of the metal pillar 6. However, similarly to the first embodiment, the wiring width of the portion of the metal wiring 42 connected to the end 6b may be formed to be larger than the width of the end 6b of the metal pillar 6.

Subsequently, as shown in FIG. 11(B), the substrate 50 is separated from the wiring layer 5 and the mold resin 3B (eighth step). Subsequently, dicing is performed along the boundary line L between the unit areas. Thereby, a plurality of individualized optical semiconductor packages 1B are obtained.

(effect)
In the optical semiconductor package 1B, in the fifth step, the mold resin 3B is filled into the internal space S between the light receiving element 2 and the substrate 50, so that the mold resin 3B covers the light receiving part 21. Since 3B has transparency to the light to be detected by the light receiving section 21, a decrease in light receiving sensitivity caused by the mold resin 3B covering the light receiving section 21 is suppressed. Furthermore, in the fifth step, the internal space S between the light receiving element 2 and the substrate 50 is filled with a single resin material, and each member (the light receiving element 2, the

metal pillars

6, 7, and the wiring layer 5) is filled with a single resin material. ) can be formed to cover the mold resin 3B. This reduces reliability due to the coexistence of two types of resin parts (for example, two resin parts formed from different materials or at different times) (for example, due to differences in thermal expansion coefficients between the two resin parts). (damage to metal wiring due to stress caused by stress, etc.) can be avoided. As described above, according to the above manufacturing method, the optical semiconductor package 1B can be manufactured with high reliability. Further, the light receiving element 2 has a light receiving surface on the first surface 2a. According to the above configuration, the optical semiconductor package 1B in which the surface of the front-illuminated light receiving element 2 is the first surface 2a can be manufactured with high reliability.

Furthermore, in the method for manufacturing the optical semiconductor package 1B described above, by carrying out the fifth step under reduced pressure, the void-free mold resin 3B can be formed all at once without using any special equipment.

(Modified example)
The step of separating (peeling) the substrate 50 from the wiring layer 5 and the like (eighth step) may be performed at any timing after the fifth step is completed. For example, substrate 50 may be removed immediately after completing the fifth step. Alternatively, the eighth step may be performed at least after the sixth step. For example, the seventh step may be performed after the sixth step, and the eighth step may be performed after the seventh step. According to the above configuration, by keeping the substrate 50 attached in the sixth step (or the sixth step and the seventh step), the sixth step and the seventh step are carried out in a state where the support stability of each member is increased. The advantage is that the process can be performed reliably.

[Third embodiment]
(Structure of optical semiconductor package)
As shown in FIG. 12, the optical semiconductor package 1C of the third embodiment is different from the optical semiconductor package 1A in that it includes a wiring layer 5C instead of the wiring layer 5. Hereinafter, the parts of the optical semiconductor package 1C that are different from the optical semiconductor package 1A will be described, and the description of the parts of the optical semiconductor package 1C that are similar to the optical semiconductor package 1A will be omitted.

The wiring layer 5C is different from the wiring layer 5 of the optical semiconductor package 1A in that it has an insulating layer 51C instead of the insulating layer 51. The insulating layer 51C is different from the insulating layer 51 in that it is formed of a transparent resin insulating film and does not have an opening 51b. The insulating layer 51C is made of a material that is transparent to the light that the light receiving section 21 detects. The insulating layer 51C may be formed of, for example, transparent epoxy resin, transparent polyimide resin, or the like.

(Method for manufacturing optical semiconductor package)
An example of the manufacturing process of the optical semiconductor package 1C will be described with reference to FIGS. 13 to 15. In this embodiment, the optical semiconductor package 1C is manufactured by a CoW method or a CoP method. 13 to 15 show the state of one unit area in each manufacturing process. The following description focuses on only one unit area.

The method for manufacturing the optical semiconductor package 1C according to this embodiment is as follows:
a first step of preparing a light receiving element 2 having a first surface 2a provided with a light receiving section 21 and an electrode terminal 22 electrically connected to the light receiving section 21;
a second step of forming, on the substrate 50, a wiring layer 5C including an insulating layer 51C and a metal wiring 52 that is transparent to light to be detected by the light receiving section 21;
a third step of forming a metal member (metal pillar 6) connected to the end portion 52a of the metal wiring 52 and protruding from the wiring layer 5C to the side opposite to the substrate 50 side;
a fourth step of arranging the light receiving element 2 on the wiring layer 5C so that the end 52b of the metal wiring 52 and the electrode terminal 22 are electrically connected;
a fifth step of forming a resin part (molding resin 3) covering the light receiving element 2, the metal pillar 6, and the wiring layer 5C;
a sixth step of exposing the second surface 2b of the light receiving element 2 and the end portion 6b of the metal pillar 6 by polishing or grinding the mold resin 3 from the side facing the second surface 2b of the light receiving element 2;
On the second surface 2b of the light receiving element 2 and on the end surface 3b of the molded resin 3 continuous with the second surface 2b, a wiring layer 4 including a metal wiring 42 electrically connected to the end 6b of the metal pillar 6 is provided. a seventh step of forming;
An eighth step of separating the substrate 50 from the wiring layer 5C and the mold resin 3 is included.

First, the light receiving element 2 (see (B) in FIG. 13) is prepared (first step). Subsequently, as shown in FIG. 13A, a wiring layer 5C is formed on the substrate 50, which is a temporary bonding member (second step). As described above, the wiring layer 5C includes the insulating layer 51C and the metal wiring 52. For example, by patterning the insulating layer 51C and patterning the metal wiring 52 using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), the wiring layer 5C shown in FIG. It will be done. Note that in this embodiment, the width of the opening 51a of the insulating layer 51C is formed to be larger than the width of the end 6a of the metal pillar 6, and as a result, the width of the portion of the metal wiring 52 connected to the end 6a is The wiring width is formed to be larger than the width of the end portion 6a of the metal pillar 6. However, similarly to the second embodiment, the wiring width of the portion of the metal wiring 52 connected to the end 6a may be formed smaller than the width of the end 6a of the metal pillar 6.

Subsequently, as shown in FIG. 13A, a metal pillar 6 is formed which is connected to the end 52a of the metal wiring 52 and protrudes from the wiring layer 5C to the side opposite to the substrate 50 side. process). The metal pillar 6 is formed, for example, by plating, solder bump forming, or the like.

Subsequently, as shown in FIG. 13(B), the light receiving element 2 is placed on the wiring layer 5C so that the end 52b of the metal wiring 52 and the electrode terminal 22 are electrically connected ( 4th step). The end portion 52b and the electrode terminal 22 are connected, for example, by bump bonding. As a result, the insulating layer 51C and the insulating layer 23 are brought into contact with each other, and no gap is formed between the insulating layer 51C and the insulating layer 23. Note that the end portion 52b and the electrode terminal 22 may be connected by hybrid bonding using copper and an insulating film.

Subsequently, as shown in FIG. 14(A), mold resin 3 is formed (fifth step). The mold resin 3 is formed to cover the light receiving element 2, the metal pillar 6, and the wiring layer 5C.

Subsequently, as shown in FIG. 14(B), the mold resin 3 is polished or ground from the side facing the second surface 2b of the light-receiving element 2 (i.e., the end surface 3b side), so that the light-receiving element 2 is polished or ground. The second surface 2b and the end portion 6b of the metal pillar 6 are exposed (sixth step). At this time, in each unit area, the end surface 3b of the molded resin 3 and the second surface 2b of the light-receiving element 2 may also be polished or ground. Similarly, the end portion 6b of the metal pillar 6 may also be polished or ground. That is, after the second surface 2b of the light receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by polishing or grinding the end surface 3b of the molded resin 3, the end surface 3b and the second surface 2b of the molded resin 3 are further exposed. Alternatively, the process of polishing or grinding the end portion 6b at once may be continued. As a result, as shown in FIG. 14(B), the second surface 2b of the light receiving element 2 and the end portion 6b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molded resin 3 become substantially flush with each other.

Subsequently, as shown in FIG. 15A, a wiring layer 4 is formed on the second surface 2b of the light receiving element 2 and on the end surface 3b of the molded resin 3 that is continuous with the second surface 2b. 7th step). In this embodiment, an insulating layer 41 and metal wiring 42 are formed on the second surface 2b of the light receiving element 2, the end 6b of the metal pillar 6, and the end surface 3b of the molded resin 3. Further, by performing electroless plating on the outer end portion of the metal wiring 42, a plated portion 43 is formed on the surface of the outer end portion.

For example, from the state shown in FIG. 14B, by patterning the insulating layer 41 and forming the pattern of the metal wiring 42 using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.), The structure shown in (A) is obtained. Note that in this embodiment, the width of the opening 41a of the insulating layer 41 is formed to be larger than the width of the end 6b of the metal pillar 6, and as a result, the width of the portion of the metal wiring 42 connected to the end 6b is The wiring width is formed to be larger than the width of the end portion 6b of the metal pillar 6. However, similarly to the second embodiment, the wiring width of the portion of the metal wiring 42 connected to the end 6b may be formed smaller than the width of the end 6b of the metal pillar 6.

Subsequently, as shown in FIG. 15(B), the substrate 50 is separated from the wiring layer 5 and the mold resin 3 (eighth step). Subsequently, dicing is performed along the boundary line L between the unit areas. Thereby, a plurality of individualized optical semiconductor packages 1C are obtained.

According to the above manufacturing method, after the wiring layer 5 on the front surface side (first surface 2a side) of the light receiving element 2 is produced first, mounting of the light receiving element 2 (chip mount), resin molding (molding resin 3 The optical semiconductor package 1C can be manufactured by the steps of forming the wiring layer 4 on the back surface side (second surface 2b side) of the light receiving element 2. In addition, also in the said manufacturing method, the process (8th process) of separating (peeling) the board|substrate 50 from the wiring layer 5 etc. may be performed at arbitrary timing after the 5th process is completed. For example, substrate 50 may be removed immediately after completing the fifth step. However, by keeping the substrate 50 attached in the sixth and seventh steps, there is an advantage that the sixth and seventh steps can be carried out with high reliability while increasing the support stability of each member. It will be done.

In the method for manufacturing the optical semiconductor package 1C described above, "wiring layer 5C" and "insulating layer 51C" are replaced with "wiring layer 5" and "insulating layer 51", and the process shown in FIG. 13 is replaced with the process shown in FIG. 16. By replacing it with , it is possible to manufacture an optical semiconductor package having the same structure as the optical semiconductor package 1A.

More specifically, in the second step of the method for manufacturing the optical semiconductor package 1C described above, "a wiring layer 5 including an insulating layer 51 and a metal wiring 52 and provided with an opening 51b for exposing the substrate 50 is placed on a substrate. "Second step of forming on 50". As a result, when the third step is completed, the structure shown in FIG. 16A is obtained instead of the structure shown in FIG. 13A.

Further, the fourth step of the method for manufacturing the optical semiconductor package 1C described above is performed at a position where the end portion 52b of the metal wiring 52 and the electrode terminal 22 are electrically connected, and the light receiving portion 21 faces the opening portion 51b. "4th step" in which the light receiving element 2 is arranged on the wiring layer 5 so that a closed space S1 is formed between the substrate 50 and the light receiving element 2. As a result, when the fourth step is completed, the structure shown in FIG. 16(B) is obtained instead of the structure shown in FIG. 13(B). Here, the closed space S1 is a sealed space surrounded by the substrate 50, the insulating layer 23, and the insulating layer 51. Therefore, in the fifth step, the mold resin 3 is formed to cover the light receiving element 2, the metal pillar 6, and the wiring layer 5, and the mold resin 3 is not filled in the closed space S1. As a result, when the subsequent sixth to eighth steps and dicing are completed, an optical semiconductor package having the same structure as the optical semiconductor package 1A shown in FIG. 1 is obtained.

Although several embodiments of the present disclosure have been described above, the present disclosure is not limited to the above embodiments. The materials and shapes of each structure are not limited to the materials and shapes described above, but various materials and shapes can be employed. Furthermore, some of the configurations in one embodiment or modification example described above can be arbitrarily applied to the configurations in other embodiments or modification examples. For example, as shown in the above embodiment, the substrate 50 can be suitably used as a temporary bonding member, but the temporary bonding member may be a member other than the substrate. For example, a sheet member (for example, a very thin sheet-like member) may be used as the temporary joining member. Further, in the above embodiments, a manufacturing method using a CoW method or a CoP method is exemplified, but methods other than the above may be adopted. For example, when an optical semiconductor package is manufactured on a chip-by-chip basis, the dicing step in the above embodiment can be omitted.

1A, 1B, 1C... Optical semiconductor package, 2... Light receiving element, 2a... First surface, 2b... Second surface, 3, 3B... Mold resin (resin part), 4... Wiring layer (first wiring layer, second wiring layer), 5... wiring layer (first wiring layer, second wiring layer), 6, 6A... metal pillar (metal member), 6a... end (first end), 6b... end (second end) part), 21... Light receiving part, 22... Electrode terminal, 42... Metal wiring (first metal wiring, second metal wiring), 50... Substrate, 51b... Opening, 52... Metal wiring (first metal wiring, second metal wiring) metal wiring), 61... shaft portion, 62... flange portion, 62a... inner surface, 100... support member, 101... plate member, 101a... through hole, 102... support substrate.

Claims

A first step of temporarily bonding a light receiving element having a first surface provided with a light receiving part and an electrode terminal electrically connected to the light receiving part, and a first end of a columnar metal member to a substrate. the first step of temporarily bonding the light receiving element to the substrate so that the first surface faces the substrate;
a second step of forming a resin part on the substrate to cover the light receiving element and the metal member;
The second surface of the light receiving element and the first end of the metal member are polished or ground by polishing or grinding the resin portion from the side opposite to the second surface of the light receiving element opposite to the first surface. a third step of exposing the second end on the opposite side;
A first wiring layer including a first metal wiring electrically connected to the second end is formed on the second surface of the light receiving element and on an end surface of the resin part that is continuous with the second surface. A fourth step of
a fifth step of separating the substrate from the light receiving element, the metal member, and the resin part;
After the fifth step, a step of electrically connecting the first end portion and the electrode terminal on a side opposite to the side where the first wiring layer is located with respect to the light receiving element and the resin portion. a sixth step of forming a second wiring layer including two metal wirings;
A method for manufacturing an optical semiconductor package.
The first step is
positioning and supporting the metal member with the first end exposed by a support member;
Temporarily bonding the first end to the substrate by bringing a temporary bonding surface of the substrate into contact with the first end of the metal member supported by the support member. ,
A method for manufacturing an optical semiconductor package according to claim 1.
The support member is
a plate-like member in which a through hole having a width larger than the width of the metal member is formed;
a support substrate on which the second end portion is placed and supported;
The metal member is inserted into and positioned through the through hole of the plate member, and is supported by the support substrate,
In a state in which the metal member is supported by the support member, the first end protrudes from the plate-shaped member on a side opposite to the support substrate side.
The method for manufacturing an optical semiconductor package according to claim 2.
The metal member has a shaft portion including the second end portion, and a flange portion including the first end portion and formed wider than the shaft portion,
The support member is a plate-like member in which a through hole is formed having a width larger than the width of the shaft portion and smaller than the width of the flange portion,
The metal member is supported by the support member by having the shaft portion inserted into the through hole and the inner surface of the flange portion on the second end side coming into contact with the peripheral edge of the through hole of the support member. be done,
The method for manufacturing an optical semiconductor package according to claim 2.
In the fourth step, the first wiring layer is formed such that a wiring width of a portion of the first metal wiring connected to the second end is larger than a width of the second end of the metal member. Form,
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 4.
In the fourth step, the first wiring layer is formed such that a wiring width of a portion of the first metal wiring connected to the second end is smaller than a width of the second end of the metal member. Form,
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 4.
In the sixth step, the second wiring layer is formed such that a wiring width of a portion of the second metal wiring connected to the first end is larger than a width of the first end of the metal member. Form,
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 6.
In the sixth step, the second wiring layer is formed such that a wiring width of a portion of the second metal wiring connected to the first end is smaller than a width of the first end of the metal member. Form,
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 6.
The fifth step is performed at least after the third step,
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 8.
The fourth step is performed after the third step,
The fifth step is performed after the fourth step,
The method for manufacturing an optical semiconductor package according to claim 9.
The light receiving element has a light receiving surface on the first surface.
A method for manufacturing an optical semiconductor package according to any one of claims 1 to 10.
a first step of forming a first wiring layer on the substrate that includes a first metal wiring and is provided with an opening that exposes the substrate;
a second step of forming a metal member connected to the first end of the first metal wiring and protruding from the first wiring layer to a side opposite to the substrate;
a third step of preparing a light receiving element having a first surface provided with a light receiving portion and an electrode terminal electrically connected to the light receiving portion;
A second end of the first metal wiring, which is different from the first end, is electrically connected to the electrode terminal, and the light receiving section is disposed at a position facing the opening, and is connected to the substrate. a fourth step of arranging the light receiving element so that an internal space is formed between the light receiving element;
a fifth step of forming a resin part that covers the light receiving element, the metal member, and the first wiring layer, fills the internal space, and has transparency to light to be detected by the light receiving part;
By polishing or grinding the resin portion from a side opposite to a second surface of the light receiving element opposite to the first surface, the second surface is connected to the first metal wiring of the metal member. a sixth step of exposing the end opposite to the side;
a second wiring layer including a second metal wiring electrically connected to the end of the metal member on the second surface of the light receiving element and on an end surface of the resin part continuous with the second surface; a seventh step of forming;
an eighth step of separating the substrate from the first wiring layer and the resin part;
A method for manufacturing an optical semiconductor package.
The eighth step is performed at least after the sixth step,
The method for manufacturing an optical semiconductor package according to claim 12.
The seventh step is performed after the sixth step,
The eighth step is performed after the seventh step,
The method for manufacturing an optical semiconductor package according to claim 12.
The light receiving element has a light receiving surface on the first surface.
The method for manufacturing an optical semiconductor package according to any one of claims 12 to 14.