TW202343818A - Method for manufacturing optical semiconductor package - Google Patents

Abstract

This method for manufacturing an optical semiconductor package comprises: a first step for temporarily bonding a light reception element and a first end of a metal pillar to a substrate; a second step for forming on the substrate a mold resin covering the light reception element and the metal pillar; a third step for polishing or grinding the mold resin from the side facing a second surface of the light reception element, to expose the second surface of the light reception element and a second end of the metal pillar; a fourth step for forming a first wiring layer on the second surface of the light reception element and on an end surface of the mold resin; a fifth step for separating the substrate from the light reception element, the metal pillar, and the mold resin; and a sixth step for, after the fifth step, forming a second wiring layer on the side, with respect to the light reception element and the mold resin, opposite to the side on which the first wiring layer is positioned.

Description

Manufacturing method of optical semiconductor packaging

The present invention relates to a manufacturing method of optical semiconductor packaging.

Patent Document 1 discloses a method for manufacturing a semiconductor package including a light-receiving element. In the manufacturing method disclosed in Patent Document 1, connection wiring including columnar electrodes is formed on a glass substrate, a light-receiving element (a silicon substrate provided with a photoelectric conversion device region (light-receiving part)) is mounted on the connection wiring, and a light-receiving element is mounted on the glass substrate. After the first sealing film (underfill) containing resin is filled between the component and the glass substrate, the entire upper surface of the glass substrate is covered with the second sealing film containing resin. Prior technical literature patent documents

Patent Document 1: Japanese Patent No. 4126389

[Problem to be solved by the invention]

In the above-mentioned manufacturing method, since the light-receiving part is covered with the first sealing film, there is a risk that the light-receiving sensitivity may decrease. In addition, since the interface between the first sealing film and the second sealing film is in contact with the connecting wiring, stress due to a difference in thermal expansion coefficient between the first sealing film and the second sealing film is concentrated on the connecting wiring. The wiring may be damaged. Thus, from the viewpoint of reliability of semiconductor packaging, the above-mentioned manufacturing method has room for improvement.

An object of the present invention is to provide a method for manufacturing an optical semiconductor package that can improve reliability. [Technical means to solve problems]

A method for manufacturing an optical semiconductor package according to one aspect of the present invention includes: a first step, which is to combine a light-receiving element with a first surface provided with a light-receiving part and an electrode terminal electrically connected to the light-receiving part, and a columnar metal The first end of the member is temporarily bonded to the substrate, and the light-receiving element is temporarily bonded to the substrate with the first surface facing the substrate; the second step is to form a resin portion covering the light-receiving element and the metal member on the substrate ; The third step is to grind or grind the resin portion from the side facing the second surface opposite to the first surface of the light-receiving element, so that the second surface of the light-receiving element and the first end of the metal member The second end portion on the opposite side is exposed; the fourth step is to form a third end portion electrically connected to the second end portion on the second surface of the light-receiving element and the end surface of the resin portion continuous with the second surface. 1. The first wiring layer of the metal wiring; the fifth step, which is to separate the substrate from the light-receiving element, the metal member, and the resin part; and the sixth step, which is to separate the light-receiving element and the resin part after the fifth step. A second wiring layer including a second metal wiring electrically connecting the first end portion and the electrode terminal is formed on the side opposite to the side where the first wiring layer is located.

In the above manufacturing method, in the first step, the light-receiving element is temporarily bonded to the substrate so that no gap is formed between the substrate and the light-receiving element. Thereby, in the second step, the resin can be prevented from flowing between the light-receiving element and the substrate, that is, the resin portion can be formed at a position facing the light-receiving portion. As a result, it is possible to avoid a decrease in the light receiving sensitivity caused by the light receiving portion being covered with the resin portion. Furthermore, in a state where the light-receiving element and the metal member are temporarily bonded to the substrate and each member is stably fixed, the second step can be performed stably and with high accuracy. As described above, according to the above-mentioned manufacturing method, the optical semiconductor package can be manufactured with high reliability.

The first step may include the following steps: positioning and supporting the metal member with the first end exposed by the support member; and contacting the temporary joint surface of the substrate with the metal member supported by the support member. The first end portion is temporarily joined to the substrate. According to the above configuration, the metal member can be temporarily joined to the substrate by a relatively simple operation of bringing the temporary joining surface of the substrate into contact with the metal member that is positioned and supported by the supporting member.

The support member may have a plate-shaped member formed with a through-hole wider than the width of the metal member, and a support base plate for placing and supporting the second end. The metal member may be inserted into the through-hole of the plate-shaped member and positioned. In addition, it is supported on the support base plate, and in a state where the metal member is supported on the support member, the first end can protrude toward the side opposite to the support base plate side with respect to the plate-shaped member. According to the above configuration, the metal member is supported by the supporting member in a state where the first end of the metal member protrudes further than the plate-shaped member. Therefore, when the temporary joining surface of the substrate comes into contact with the first end, it is possible to prevent the temporary joining surface of the substrate from being in contact with the plate-like member. That is, it is possible to reliably prevent the temporary bonding surface of the substrate from adhering to the plate-shaped member.

The metal member may have a shaft part including the second end part, and a flange part including the first end part and formed wider than the shaft part, and the support member may be formed with a width larger than the width of the shaft part and smaller than the flange part. For a plate-shaped member with a through-hole of a width, the metal member can be supported by having the shaft inserted into the through-hole and the inner surface of the second end side of the flange being in contact with the peripheral edge of the through-hole of the supporting member. Support components. According to the above configuration, the flange portion can be hung on the peripheral portion of the through hole of the plate-shaped member and supported there. That is, since a support substrate for supporting the second end portion is not required, the support member can be simplified. Furthermore, by providing the flange portion, the posture (verticality) of the metal member erected on the substrate can be further stabilized.

In the fourth step, the first wiring layer may be formed such that the wiring width of the portion of the first metal wiring connected to the second end is larger than the width of the second end of the metal member. According to the above structure, it is possible to absorb the positional deviation of the metal member that may occur in the second step (resin portion forming step). That is, by increasing the wiring width of the first metal wiring, even if the position of the metal member is slightly shifted in the second step, the first metal wiring and the metal member (second end portion) can be brought into reliable contact.

In the fourth step, the first wiring layer may be formed such that the wiring width of the portion of the first metal wiring connected to the second end is smaller than the width of the second end of the metal member. According to the above configuration, the first metal wiring can be formed without being affected by the size (width) of the metal member. For example, when the width of the metal member (the second end portion) is relatively large, if the width of the first metal wiring is made larger than the width of the metal member, the first metal wiring may be easily disposed on the first wiring. The problem of interference with other wiring on the layer. According to the above-described configuration, such problems can be avoided.

In the sixth step, the second wiring layer may be formed such that the wiring width of the portion of the second metal wiring connected to the first end is larger than the width of the first end of the metal member. According to the above structure, it is possible to absorb the positional deviation of the metal member that may occur in the second step (resin portion forming step). That is, by increasing the wiring width of the second metal wiring, even if the position of the metal member is slightly shifted in the second step, the second metal wiring can be brought into contact with the metal member (first end portion) more reliably.

In the sixth step, the second wiring layer may be formed such that the wiring width of the portion of the second metal wiring connected to the first end is smaller than the width of the first end of the metal member. According to the above configuration, the second metal wiring is formed without being affected by the size (width) of the metal member. For example, when the width of the metal member (the first end) is relatively large, if the width of the second metal wiring is made larger than the width of the metal member, the second metal wiring may be easily disposed on the second wiring. The problem of interference with other wiring on the layer. According to the above-described configuration, such problems can be avoided.

Step 5 may be implemented at least after step 3. In addition, the fourth step can be implemented after the third step, and the fifth step can be implemented after the fourth step. According to the above configuration, by placing the substrate in the mounted state also in the third step (or the third step and the fourth step), the third step (3) can be performed with high reliability while improving the support stability of each member. Or, steps 3 and 4).

The light-receiving element may have a light-receiving surface on the first surface. According to the above structure, an optical semiconductor package in which the surface of the surface-incidence type light-receiving element is the first surface can be manufactured with high reliability.

A method of manufacturing an optical semiconductor package according to another aspect of the present invention includes: a first step, which is to form a first wiring layer on a substrate that includes a first metal wiring and is provided with an opening for exposing the substrate; a second step, In this step, a metal member is formed, which is connected to the first end of the first metal wiring and protrudes from the first wiring layer toward the side opposite to the substrate side; in the third step, a light-receiving element is prepared, and the light-receiving element has a device There is a light-receiving part and a first surface of an electrode terminal electrically connected to the light-receiving part; in the fourth step, a second end of a first metal wiring different from the first end is electrically connected to the electrode terminal and receives light The light-receiving element is arranged in a position opposite to the opening and an internal space is formed between the substrate and the light-receiving element; the fifth step is to form a resin part that covers the light-receiving element, the metal member, and the third 1. The wiring layer is filled into the internal space and has transparency with respect to the light that becomes the detection target of the light-receiving part; the 6th step is to pass the second surface from the side opposite to the first surface of the light-receiving element. Grind or grind the resin part to expose the second surface and the end of the metal member on the opposite side to the side connected to the first metal wiring; in the seventh step, it is connected to the second surface of the light-receiving element and the second surface of the light-receiving element. On the end surface of the continuous resin part, a second wiring layer including a second metal wiring electrically connected to the end of the metal member is formed; and the eighth step is to separate the substrate from the first wiring layer and the resin part.

In the above-mentioned manufacturing method, in the fifth step, the resin part covers the light-receiving part by filling the internal space between the light-receiving element and the substrate. However, the resin part has transparency to the light that is the detection target of the light-receiving part. , therefore it is possible to suppress the decrease in light receiving sensitivity caused by the resin part covering the light receiving part. Furthermore, in the fifth step, the resin portion that fills the internal space between the light-receiving element and the substrate and covers each member (the light-receiving element, the metal member, and the first wiring layer) can be formed at once from a single resin material. Thereby, it is possible to avoid a decrease in reliability caused by the mixing of two types of resin parts (for example, two resin parts formed of different materials or formed at different points in time) (for example, due to the thermal expansion coefficient of the two resin parts). Damage to metal wiring caused by stress caused by differences, etc.). As described above, according to the above-mentioned manufacturing method, the optical semiconductor package can be manufactured with high reliability.

Step 8 may be implemented at least after step 6. In addition, step 7 can be implemented after step 6, and step 8 can be implemented after step 7. According to the above configuration, by placing the substrate in the mounted state also in the sixth step (or the sixth step and the seventh step), the sixth step (6) can be performed with high reliability while improving the support stability of each member. Or, steps 6 and 7).

The light-receiving element may have a light-receiving surface on the first surface. According to the above structure, an optical semiconductor package in which the surface of the surface-incidence type light-receiving element is the first surface can be manufactured with high reliability. [Effects of the invention]

According to the present invention, a method for manufacturing an optical semiconductor package capable of improving reliability can be provided.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In each figure, the same or equivalent parts are marked with the same symbols, and repeated explanations are omitted. In addition, in the drawings, there are some parts that are enlarged in order to explain the characteristic parts of the embodiment for easy understanding. Therefore, the dimensional ratios in the drawings may differ from the actual dimensional ratios.

[First Embodiment] (Structure of optical semiconductor package) As shown in FIG. 1 , the optical semiconductor package 1A of the first embodiment includes a light-receiving element 2, a mold resin 3 (resin part), a wiring layer 4 (a first wiring layer), a wiring layer 5 (a second wiring layer), and Metal pillar 6 (metal member). Optical semiconductor package 1A is one of FOWLP (Fan Out Wafer Level Package)/FOPLP (Fan Out Panel Level Package).

The light-receiving element 2 is a semiconductor chip having a light-receiving portion 21 and is formed in a rectangular plate shape. The light-receiving element 2 has a first surface 2a and a second surface 2b. In FIG. 1 , the opposing direction between the first surface 2 a and the second surface 2 b is represented as the Z-axis direction, the direction along one side of the light-receiving element 2 when viewed from the Z-axis direction is represented as the X-axis direction, and The direction along the other side of the light-receiving element 2 (the side perpendicular to the above-mentioned side) when viewed from the Z-axis direction is represented as the Y-axis direction.

The first surface 2a is provided with a light-receiving part 21 and a plurality of (two in this embodiment) electrode terminals 22 electrically connected to the light-receiving part 21. In this embodiment, as an example, one light receiving part 21 is provided at substantially the center of the first surface 2a when viewed from the Z-axis direction, but a plurality of light receiving parts 21 may be provided on the first surface 2a. In this case, the plurality of light receiving portions 21 may be arranged one-dimensionally or two-dimensionally when viewed from the Z-axis direction. The light-receiving part 21 is arrange|positioned along the 1st surface. That is, the light-receiving element 2 has a light-receiving surface on the first surface 2a. More specifically, a portion of the first surface 2 a facing the light receiving portion 21 functions as a light receiving surface. In the example of FIG. 1 , the light-receiving part 21 is embedded in the light-receiving element 2 so that the light incident surface of the light-receiving part 21 (surface on the first surface 2 a side) and the first surface 2 a are substantially the same plane. Examples of the light receiving portion 21 include Si photodiodes (SiPD), Si avalanche photodiodes (SiAPD), Si-MPPC (Multi-Pixel Photon Counter, multi-pixel photon counter), and the like. Two electrode terminals 22 are provided in a protruding manner on the first surface 2a.

An insulating layer 23 is provided on the first surface 2a. The insulating layer 23 is provided to surround a plurality of (two in this embodiment) electrode terminals 22 provided on the first surface 2a. The insulating layer 23 is formed with an opening 23 a for exposing each electrode terminal 22 . The insulating layer 23 may be formed of an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide.

When viewed from the Z-axis direction, the molding resin 3 seals the side surfaces of the light-receiving element 2 so as to surround the light-receiving element 2 . The molding resin 3 also covers the metal pillar 6 . The mold resin 3 may be formed of, for example, epoxy resin or the like. The mold resin 3 has an end surface 3 a formed in the same plane as the surface of the insulating layer 23 , and an end surface 3 b formed in the same plane as the second surface 2 b of the light receiving element 2 .

The wiring layer 4 is provided on the second surface 2b side of the light-receiving element 2 and on the end surface 3b of the molding resin 3 that is continuous with the second surface 2b. The wiring layer 4 is a rewiring layer including an insulating layer 41 and a metal wiring 42 (first metal wiring). The insulating layer 41 may be formed of an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide. The metal wiring 42 is, for example, copper (Cu) wiring.

An opening 41 a is provided in a portion of the insulating layer 41 that overlaps the metal pillar 6 in the Z-axis direction. A metal wiring 42 electrically connected to the end 6b (second end) of the metal pillar 6 on the wiring layer 4 side is provided in the opening 41a. The width of the opening 41a is set larger than the width of the end portion 6b of the metal pillar 6. Thereby, the wiring width w11 of the portion of the metal wiring 42 connected to the end portion 6 b is larger than the width w12 of the end portion 6 b of the metal pillar 6 .

A plated portion 43 is provided at the outer end of the metal wiring 42 (the end located on the opposite side to the metal pillar 6 in the Z-axis direction). The plated portion 43 is a portion joined to a printed circuit board or the like by solder or the like, for example. The plated portion 43 is, for example, a double-layer plating of nickel and gold (Ni/Au plating).

The wiring layer 5 is provided on the side opposite to the side where the wiring layer 4 is located with respect to the light receiving element 2 and the mold resin 3 . That is, the wiring layer 5 is provided on the insulating layer 23 and the end surface 3a of the molding resin 3 on the first surface 2a side of the light receiving element 2. The wiring layer 5 is a rewiring layer including an insulating layer 51 and a metal wiring 52 (second metal wiring). The insulating layer 51 may be formed of an inorganic film such as silicon dioxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic film such as polyimide. The metal wiring 52 is, for example, copper (Cu) wiring.

An opening 51 a is provided in a portion of the insulating layer 51 that overlaps the metal pillar 6 in the Z-axis direction. A metal wiring 52 electrically connected to the end 6 a (first end) of the metal pillar 6 on the wiring layer 5 side is provided in the opening 51 a. The width of the opening 51a is set larger than the width of the end portion 6a of the metal pillar 6. Thereby, the wiring width w21 of the portion of the metal wiring 52 connected to the end portion 6a is larger than the width w22 of the end portion 6a of the metal pillar 6 .

An opening 51 b is provided in a portion of the insulating layer 51 that overlaps the light receiving portion 21 in the Z-axis direction. That is, the insulating layer 51 is formed so as not to cover the light receiving portion 21 in the Z-axis direction.

The metal wiring 52 electrically connects the end portion 6 a of the metal pillar 6 and the electrode terminal 22 of the light-receiving element 2 . That is, the light-receiving element 2 (electrode terminal 22) is electrically connected to the plated portion 43 via the metal wiring 52, the metal pillar 6, and the metal wiring 42.

The metal pillar 6 is a metal member formed into a columnar shape. The metal pillar 6 is formed of copper, for example. The metal pillar 6 is, for example, a so-called copper pillar or copper rod.

In this embodiment, two electrode terminals 22 , metal wirings 52 , metal posts 6 , and metal wirings 42 are provided each. More specifically, when viewed from the Y-axis direction, a group of electrode terminals 22 , metal wires 52 , metal posts 6 , and metal wires 42 that are electrically connected to each other are respectively provided on both sides of the light receiving portion 21 . Furthermore, when a plurality of light receiving portions 21 are provided as described above, the number of electrode terminals 22 (that is, the number of the groups) can be changed according to the number of light receiving portions 21 .

(Manufacturing method of optical semiconductor package) An example of the manufacturing steps of the optical semiconductor package 1A will be described with reference to FIGS. 2 to 7 . In this embodiment, the optical semiconductor package 1A is manufactured by the CoW (Chip on Wafer, chip on wafer) method or the CoP (Chip on Panel, chip on panel) method.

First, as shown in FIG. 2 , the end portion 6 a of the light-receiving element 2 and the metal pillar 6 is temporarily joined to the temporary joining surface 50 a of the substrate 50 as a temporary joining member (for example, the surface coated with an adhesive for temporary joining) (Sec. 1 step). That is, the light-receiving element 2 and the metal pillar 6 are temporarily bonded to the substrate 50 in a manner that they can be detached later. The light-receiving element 2 is temporarily bonded to the substrate 50 so that the first surface 2 a faces the substrate 50 . In this embodiment, the insulating layer 23 provided on the first surface 2 a of the light-receiving element 2 is temporarily bonded to the substrate 50 .

The substrate 50 is, for example, a silicon wafer, a glass wafer, a SUS carrier, or the like. On the substrate, a plurality of unit areas corresponding to one optical semiconductor package 1A are arranged in a grid shape (two-dimensional shape). 2 to 7 show the state of one unit area in each manufacturing step.

Referring to FIG. 3 , an example of a method of temporarily joining the metal pillar 6 to the substrate 50 will be described. In this example, a support member 100 is used that positions each metal pillar 6 in a state in which the end portion 6 a of a plurality of (number of unit areas × number of metal pillars included in each unit area) metal pillars 6 is exposed. Specifically, the step of temporarily joining the metal pillar 6 to the substrate 50 in the first step includes the following steps: positioning and supporting the metal pillar 6 with the end 6a of the metal pillar 6 exposed by the supporting member 100; And by bringing the temporary joint surface 50a of the substrate 50 into contact with the end 6a of the metal column 6 supported on the support member 100, the end 6a of the metal column 6 is temporarily joined to the substrate 50. According to the above configuration, the metal pillar 6 can be temporarily bonded to the substrate 50 by a relatively simple operation of bringing the temporary bonding surface 50 a of the substrate 50 into contact with the metal pillar 6 that is positioned and supported by the support member 100 .

First, as shown in FIG. 3(A) , the metal pillar 6 is positioned and supported by the support member 100 in a state in which the end portion 6 a of the metal pillar 6 is exposed. In this example, the support member 100 has a plate-shaped member 101 formed with a through hole 101 a wider than the width of the metal pillar 6 , and a support substrate 102 for placing and supporting the end portion 6 b of the metal pillar 6 . Furthermore, the size of the through hole 101a is adjusted to a size that can insert the metal pillar 6 and keep the lateral positional deviation of the metal pillar 6 within an allowable error range. Each metal pillar 6 is inserted into the through hole 101 a of the plate-shaped member 101 to be positioned, and is supported by the support substrate 102 . In a state where the metal pillar 6 is supported by the support member 100, the end portion 6a protrudes toward the side opposite to the support substrate 102 side with respect to the plate-shaped member 101. In addition, the plate-shaped member 101 and the support substrate 102 may be formed separately as shown in FIG. 3 , or may be formed integrally. In addition, as shown in FIG. 3 , a space (gap) may be provided between the plate-shaped member 101 and the supporting substrate 102 , or such a space may not be provided.

Then, as shown in FIG. 3(B) , the temporary joint surface 50a of the substrate 50 comes into contact with the end portion 6a of the metal pillar 6 supported on the supporting member 100. Thereby, as shown in FIG. 3(C) , the end portion 6a of the metal pillar 6 is temporarily joined to the temporary joining surface 50a of the substrate 50.

According to the above configuration, the metal pillar 6 is supported by the support member 100 in a state where the end portion 6a of the metal pillar 6 protrudes further than the plate-shaped member 101. Therefore, when the temporary joint surface 50a of the substrate 50 is brought into contact with the end portion 6a, it is possible to prevent The temporary bonding surface 50a of the substrate 50 is in contact with the plate-shaped member 101. That is, it is possible to reliably prevent the temporary bonding surface 50 a of the substrate 50 from adhering to the plate-shaped member 101 .

Here, as shown in FIG. 4 , a metal pillar 6A having a flange portion 62 may be used instead of the metal pillar 6 . The metal pillar 6A has a shaft part 61 including the end part 6b, and a flange part 62 including the end part 6a and formed wider than the shaft part 61. The flange portion 62 is a portion of the end portion 6 a extending outward in a direction orthogonal to the axial direction of the shaft portion 61 . The shape of the flange portion 62 viewed from the axial direction is, for example, a circular shape. The through hole 101 a of the plate-shaped member 101 is set to have a width larger than the width of the shaft portion 61 and smaller than the width of the flange portion 62 . The metal pillar 6A is supported on the plate-shaped member 101 by inserting the shaft portion 61 into the through-hole 101a and having the inner surface 62a of the end portion 6b side of the flange portion 62 in contact with the peripheral edge of the through-hole 101a of the plate-shaped member 101. . In this state, by bringing the temporary bonding surface 50a of the substrate 50 into contact with the end portion 6a of the metal pillar 6A, the end portion 6a of the metal pillar 6A can be temporarily bonded to the substrate 50. According to the above configuration, the flange portion 62 can be hung on the peripheral portion of the through hole 101a of the plate-shaped member 101 and supported there. Therefore, the support substrate 102 for supporting the end portion 6b is unnecessary. As a result, the support member 100 can be simplified. In addition, by providing the flange portion 62, the posture (verticality) of the metal pillar 6A erected on the substrate 50 can be further stabilized.

However, the method of forming the metal pillars 6 on the substrate 50 is not limited to the above. For example, the metal pillars 6 can be formed on the substrate 50 by transferring the metal pillars 6 to a designated position on the substrate 50 using a transfer device configured to be able to transfer the metal pillars 6 . According to the above method, by controlling the transfer device, the metal pillar 6 can be placed at any position on the substrate 50 with high precision. Alternatively, the pre-semiconductor steps (seed layer formation, photolithography, electrolytic Cu plating, resist removal, seed layer etching, etc.) for forming the metal pattern (metal pillar 6) on the substrate 50 can also be performed. , and the metal pillars 6 are formed on the substrate 50 . Through the above method, the pattern (position and shape) of the metal pillar 6 can also be controlled with high precision. Alternatively, wire bonding can be performed by forming a metal pad on the substrate 50, forming a vertically extending metal line on the metal pad, and cutting the metal line bonded to the metal pad to an appropriate length to form a metal Pillar 6 (that is, the combined structure of metal pads and metal wires). According to the above method, a metal wire (metal pillar 6) of any diameter and length can be formed by adjusting the bonding conditions (parameters).

Next, as shown in FIG. 5(A) , the molding resin 3 covering the light-receiving element 2 and the metal pillar 6 arranged in each unit area is formed on the substrate 50 (second step). Focusing on one unit area, the molding resin 3 covers the second surface 2b and side surfaces of the light-receiving element 2 and covers the entire portion of each metal pillar 6 except the end portion 6a (the end portion 6b and the side surface). form.

Next, as shown in FIG. 5(B) , by grinding or grinding the molding resin 3 from the side opposite to the second surface 2b of the light-receiving element 2 (that is, the end surface 3b side), the second surface of the light-receiving element 2 is The surface 2b and the end 6b of the metal pillar 6 are exposed (step 3). The term "grinding or grinding" includes situations where only one of grinding and grinding is performed, and also includes situations where both grinding and grinding are performed. At this time, in each unit area, the second surface 2b of the light-receiving element 2 may also be ground or ground together with the end surface 3b of the molding resin 3. Similarly, the end 6b of the metal pillar 6 can also be ground or ground. That is, after the second surface 2b of the light-receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by grinding or grinding the end surface 3b of the molding resin 3, the molding resin 3 can be continued to be exposed. The end surface 3b is ground or ground together with the second surface 2b or the end 6b. As a result, as shown in FIG. 5(B) , the light-receiving element 2 is reduced in thickness, and the second surface 2 b of the light-receiving element 2 and the end portion 6 b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light-receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molding resin 3 become substantially the same plane.

Then, as shown in FIG. 6(A) , the wiring layer 4 is formed on the second surface 2b of the light-receiving element 2 and on the end surface 3b of the molding resin 3 that is continuous with the second surface 2b. In this embodiment, the insulating layer 41 and the metal wiring 42 are formed on the second surface 2b of the light-receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molding resin 3.

For example, from the state shown in FIG. 5(B) , by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 41 and pattern the metal wiring 42, it is possible to The structure shown in (A) of Figure 6 is obtained. The wiring layer 4 is formed such that the wiring width of the portion of the metal wiring 42 connected to the end portion 6 b is larger than the width of the end portion 6 b. More specifically, the width of the opening 41 a of the insulating layer 41 is formed larger than the width of the end portion 6 b of the metal pillar 6 . Thereby, the wiring width w11 (see FIG. 1 ) of the portion of the metal wiring 42 connected to the end 6 b is formed larger than the width w12 (see FIG. 1 ) of the end 6 b of the metal pillar 6 . According to the above structure, the positional deviation of the metal pillar 6 that may occur in the second step (the step of forming the mold resin 3) can be absorbed. That is, by increasing the wiring width of the metal wiring 42, even if the position of the metal pillar 6 is slightly shifted due to the inflow of the molding resin 3 in the second step, the metal wiring 42 can be aligned with the metal pillar 6 (end Part 6b) for more reliable contact.

Furthermore, contrary to the above, the wiring layer 4 may be formed such that the wiring width of the portion of the metal wiring 42 connected to the end portion 6b is smaller than the width of the end portion 6b of the metal pillar 6 (refer to the second embodiment below). ). In this case, the metal wiring 42 can be formed without being affected by the size (width) of the metal pillar 6 . For example, when the width of the metal pillar 6 (end portion 6b) is relatively large, if the width of the metal wiring 42 is made larger than the width of the metal pillar 6, the metal wiring 42 may easily interfere with the wiring layer 4. Other wiring interference problems. According to the above-described configuration, such problems can be avoided.

Next, as shown in FIG. 6(B) , the substrate 50 is separated from the light-receiving element 2, the metal pillar 6, and the molding resin 3 (the fifth step). Furthermore, the processing surface (surface to be processed) is changed from the surface on the second surface 2b side of the light-receiving element 2 to the surface on the first surface 2a side of the light-receiving element 2 (that is, the surface exposed after the substrate 50 is separated).

Next, after the substrate 50 is separated from the light-receiving element 2, the metal pillar 6, and the molding resin 3 as described above (that is, after the fifth step), as shown in (A) of FIG. 7, relative to the light-receiving element 2 And the mold resin 3 forms the wiring layer 5 on the side opposite to the side where the wiring layer 4 is located (step 6). In this embodiment, the insulating layer 51 and the metal wiring 52 are formed on the portion of the insulating layer 23 that does not overlap the light receiving portion 21 , the end portion 6 a of the metal pillar 6 , and the end surface 3 a of the molding resin 3 . Furthermore, electroless plating is performed on the outer end portion of the metal wiring 42 to form a plated portion 43 on the surface of the outer end portion.

For example, from the state shown in FIG. 6(B) , by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 51 and pattern the metal wiring 52, it is possible to The structure shown in (A) of Figure 7 is obtained. The wiring layer 5 is formed such that the wiring width of the portion of the metal wiring 52 connected to the end portion 6a is larger than the width of the end portion 6a. More specifically, the width of the opening 51 a of the insulating layer 51 is formed larger than the width of the end portion 6 a of the metal pillar 6 . Thereby, the wiring width w21 (see FIG. 1 ) of the portion of the metal wiring 52 connected to the end 6 a is formed larger than the width w22 (see FIG. 1 ) of the end 6 a of the metal pillar 6 . According to the above structure, the positional deviation of the metal pillar 6 that may occur in the second step (the step of forming the mold resin 3) can be absorbed. That is, by increasing the wiring width of the metal wiring 52, even if the position of the metal pillar 6 is slightly shifted due to the inflow of the molding resin 3 in the second step, the metal wiring 52 can be aligned with the metal pillar 6 (end Part 6a) contacts more reliably.

Furthermore, contrary to the above, the wiring layer 5 may be formed such that the wiring width of the portion of the metal wiring 52 connected to the end portion 6a is smaller than the width of the end portion 6a of the metal pillar 6 (refer to the second embodiment below). Way). In this case, the metal wiring 52 can be formed without being affected by the size (width) of the metal pillar 6 . For example, when the width of the metal pillar 6 (end portion 6 a ) is relatively large, if the width of the metal wiring 52 is made larger than the width of the metal pillar 6 , the metal wiring 52 may easily interfere with the wiring layer 5 . Other wiring interference problems. According to the above-described configuration, such problems can be avoided.

Next, as shown in FIG. 7(B) , cutting is performed along the boundary line L between the unit areas. Thereby, a plurality of single-chip optical semiconductor packages 1A can be obtained.

(Effect) In the above-mentioned manufacturing method of the optical semiconductor package 1A, in the first step, the light-receiving element 2 is temporarily bonded to the substrate 50 so that no gap is formed between the substrate 50 and the light-receiving element 2 . Thereby, in the second step, the mold resin 3 can be prevented from flowing between the light receiving element 2 and the substrate 50 , that is, the mold resin 3 can be formed at a position facing the light receiving portion 21 . As a result, it is possible to avoid a decrease in the light receiving sensitivity caused by the light receiving portion 21 being covered with the mold resin 3 . Furthermore, by temporarily joining the light-receiving element 2 and the metal pillar 6 to the substrate 50, and in a state where each component is stably fixed, the second step can be performed stably and with high accuracy. More specifically, it is possible to suppress package warpage that occurs when the mold resin 3 is cured. As described above, according to the above-mentioned manufacturing method, the optical semiconductor package 1A can be manufactured with high reliability. Furthermore, the light-receiving element 2 has a light-receiving surface on the first surface 2a. According to the above structure, the optical semiconductor package 1A in which the surface of the incident-type light-receiving element 2 is the first surface 2a can be manufactured with high reliability.

In addition, according to the above-mentioned manufacturing method of the optical semiconductor package 1A, the following effects are also exhibited. That is, as in the method disclosed in Patent Document 1, when the light-receiving element and the glass substrate are arranged apart from each other using bump connections, the uneven amount of bumps will cause the light-receiving element to tilt relative to the glass substrate, thereby causing optical axis deviation. If moved, the uniformity may be reduced. On the other hand, according to the above-mentioned manufacturing method of the optical semiconductor package 1A, since the light-receiving element 2 (insulating layer 23) is in close contact with the substrate 50, it is possible to prevent the light-receiving element 2 from being arranged obliquely with respect to the substrate 50, thereby avoiding the above-mentioned occurrence. problem.

Furthermore, in the method disclosed in Patent Document 1, in order to seal the underfill between the glass substrate and the light-receiving element, the light-receiving element and the glass substrate must be arranged with a certain distance between them. In this case, since the light-receiving element is located on the back side of the package, the wiring layer formed on the glass substrate blocks the view of the light-receiving part, and the working area of the light-receiving element is narrowed. According to the above-mentioned manufacturing method of the optical semiconductor package 1A, this problem can also be avoided.

In addition, in the method disclosed in Patent Document 1, there are cases where pores are generated in the underfill sealed between the glass substrate and the light-receiving element, and special processing to eliminate the pores is required. However, according to the above-mentioned optical semiconductor package 1A In this manufacturing method, since the underfill is not formed at the position facing the light-receiving element 2 (light-receiving part 21), the above-mentioned problems can also be avoided.

(Example of variation) Optical components such as glass, bandpass filters, and lenses can be installed on the insulating layer 23 at a position facing the light receiving portion 21 . The step of mounting such optical components may be performed, for example, after the step of forming the wiring layer 5 (step 6). Alternatively, the above-mentioned optical components may also be pre-installed on the light-receiving element 2 before performing the manufacturing steps of this embodiment. In addition, the step of separating (peeling off) the substrate 50 from the light-receiving element 2 and the like (the fifth step) may be performed at any point between the completion of the second step and the start of the sixth step. For example, the substrate 50 can be directly removed after the second step is completed. Alternatively, the fifth step may be implemented at least after the third step. For example, step 4 can be implemented after step 3, and step 5 can be implemented after step 4. According to the above configuration, by placing the substrate 50 in the mounted state also in the third step (or the third step and the fourth step), it is possible to perform the third step with high reliability while improving the support stability of each member. Advantages of the 3 steps (or, steps 3 and 4). In particular, in this embodiment, since the light-receiving part 21 is exposed to the outside through the insulating layer 23, by placing the substrate 50 in the mounted state, the light-receiving part 21 can be appropriately protected from external impacts in each step. the influence. In addition, when performing the sixth step, in order to improve the support stability of each component, a substrate (for example, the substrate 50 ) as a temporary joining member may be mounted on the wiring layer 4 .

[Second Embodiment] (Structure of optical semiconductor package) As shown in FIG. 8 , the optical semiconductor package 1B of the second embodiment is different from the optical semiconductor package 1A in that it includes a transparent mold resin 3B instead of the mold resin 3 . In addition, the optical semiconductor package 1B has the end portion 6a of the metal pillar 6 (metal member) located at a position higher than the upper surface of the insulating layer 23 (the surface opposite to the first surface 2a side), and further has the metal wiring 52 The end portion 52b on the opposite side to the side connected to the end portion 6a and the metal pillar 7 connected to the electrode terminal 22 are also different from the optical semiconductor package 1A. Hereinafter, the parts of the structure of the optical semiconductor package 1B that are different from the optical semiconductor package 1A will be described, and the description of the parts of the structure of the optical semiconductor package 1B that are the same as the optical semiconductor package 1A will be omitted.

The mold resin 3B is made of a material that has transparency with respect to the light (wavelength) to be detected by the light receiving unit 21 . The mold resin 3B may be formed of, for example, transparent epoxy resin or the like. The molding resin 3B is not only provided on the side of the light-receiving element 2, but also on the portion facing the first surface 2a of the light-receiving element 2 (that is, the area on the insulating layer 23), and covers the metal pillars 6 and 7. The entire side. The mold resin 3B is also provided inside the opening 51b of the wiring layer 5 . That is, the end surface 3a on the opposite side to the end surface 3b (the end surface formed in the same plane as the second surface 2b) of the molding resin 3B is formed in the same plane as the outer surface of the wiring layer 5 (insulating layer 51).

In the optical semiconductor package 1B, the wiring layer 5 (first wiring layer) is separated from the insulating layer 23 in the Z-axis direction. Therefore, the metal pillar 7 for electrically connecting the metal wiring 52 (first metal wiring) and the electrode terminal 22 is provided. In the optical semiconductor package 1B, the metal wiring 52 has an end portion 52a (first end portion) disposed on the outside in the X-axis direction (a portion that does not overlap with the light-receiving element 2), and an end portion 52a (1st end portion) disposed on the inside in the X-axis direction. The end portion 52b (the second end portion) of the portion overlapping the light-receiving element 2). The end portion 52a is connected to the end portion 6a of the metal pillar 6 . The end portion 52b is connected to the end portion 7a of the metal pillar 7 (the end portion on the opposite side to the electrode terminal 22 side). Furthermore, the optical semiconductor package 1B does not necessarily need to have columnar metal pillars 7 . For example, the end portion 52b and the electrode terminal 22 may be connected via a conductive bump. That is, the end portion 52b and the electrode terminal 22 only need to be electrically connected through some conductive member. In addition, the conductive member is disposed between the end portion 52b and the electrode terminal 22 to form between the insulating layer 23 and the insulating layer 51 for introducing the molding resin 3B into the internal space S in the fifth step described below. (Refer to (B) of Figure 9).

(Manufacturing method of optical semiconductor package) An example of the manufacturing steps of the optical semiconductor package 1B will be described with reference to FIGS. 9 to 11 . In this embodiment, the optical semiconductor package 1B is manufactured by the CoW method or the CoP method. Figures 9 to 11 show the state of one unit area in each manufacturing step. The following description focuses on only one unit area.

First, as shown in FIG. 9(A) , the wiring layer 5 provided with the opening 51b for exposing the substrate 50 is formed on the substrate 50 as a temporary bonding member (first step). The wiring layer 5 has an insulating layer 51 and metal wiring 52 . The opening 51b is provided in the insulating layer 51 . For example, by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 51 and pattern the metal wiring 52, the wiring layer shown in FIG. 9(A) can be obtained. 5. Furthermore, in this embodiment, the width of the opening 51a of the insulating layer 51 is formed smaller than the width of the end portion 6a of the metal pillar 6. As a result, the wiring width of the portion of the metal wiring 52 connected to the end portion 6a is formed smaller than the width of the metal wiring 52. The width of the end 6a of the column 6. However, like the first embodiment, the wiring width of the portion of the metal wiring 52 connected to the end portion 6 a may be formed larger than the width of the end portion 6 a of the metal pillar 6 .

Next, as shown in FIG. 9(A) , the metal pillar 6 is connected to the end portion 52a of the metal wiring 52 and protrudes from the wiring layer 5 toward the side opposite to the substrate 50 side (second step). The metal pillar 6 is formed by, for example, plating processing, solder bump forming processing, or the like. The metal pillar 6 has an end portion 6a connected to the end portion 52a, and an end portion 6b on the opposite side to the end portion 6a.

Next, as shown in FIG. 9(B) , the light-receiving element 2 is prepared (third step). Then, the end portion 52b of the metal wiring 52 that is different from the end portion 52a is electrically connected to the electrode terminal 22 through the metal pillar 7, and the light-receiving portion 21 is disposed at a position facing the opening 51b between the substrate 50 and the light-receiving element 2 Arrange the light-receiving element 2 so that an internal space S is formed between them (step 4). The metal pillar 7 has an end portion 7a connected to the end portion 52b, and an end portion 7b on the opposite side to the end portion 7a. Furthermore, as mentioned above, the metal pillar 7 only needs to be some conductive member. For example, it may be a conductive bump formed by bump bonding the end portion 7 b and the electrode terminal 22 . Here, the upper surface of the insulating layer 51 (the surface opposite to the side of the substrate 50) is separated from the lower surface of the insulating layer 23 (the surface facing the substrate 50), and there is a gap between the insulating layer 51 and the insulating layer 23. . That is, the internal space S communicates with the outside via this gap. In other words, the internal space S is not set as a closed space separated from the outside.

Next, as shown in FIG. 10(A) , mold resin 3B is formed (fifth step). As mentioned above, the molding resin 3B is formed of a material having transparency to the light to be detected by the light-receiving part 21 , covers the light-receiving element 2 , the metal pillars 6 and 7 , and the wiring layer 5 and fills the internal space S (see Figure 9(B)).

Next, as shown in FIG. 10(B) , by grinding or grinding the molding resin 3B from the side opposite to the second surface 2b of the light-receiving element 2 (that is, the end surface 3b side), the second surface of the light-receiving element 2 is The surface 2b and the end 6b of the metal pillar 6 are exposed (step 6). At this time, in each unit area, the second surface 2b of the light-receiving element 2 may also be ground or ground together with the end surface 3b of the molding resin 3B. Similarly, the end 6b of the metal pillar 6 can also be ground or ground. That is, after the second surface 2b of the light-receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by grinding or grinding the end surface 3b of the molding resin 3B, the molding resin 3B can be further exposed. The end surface 3b is ground or ground together with the second surface 2b or the end 6b. As a result, as shown in FIG. 10(B) , the second surface 2b of the light-receiving element 2 and the end portion 6b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light-receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molding resin 3B become substantially the same plane.

Next, as shown in FIG. 11(A) , the wiring layer 4 is formed on the second surface 2b of the light-receiving element 2 and the end surface 3b of the mold resin 3B that is continuous with the second surface 2b (step 7). In this embodiment, an insulating layer 41 and a metal wiring 42 (second metal wiring) are formed on the second surface 2b of the light-receiving element 2, the end 6b of the metal pillar 6, and the end surface 3b of the molding resin 3B. Furthermore, electroless plating is performed on the outer end portion of the metal wiring 42 to form a plated portion 43 on the surface of the outer end portion.

For example, from the state shown in FIG. 10(B) , by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 41 and pattern the metal wiring 42, it is possible to The structure shown in (A) of Fig. 11 is obtained. Furthermore, in this embodiment, the width of the opening 41a of the insulating layer 41 is formed smaller than the width of the end portion 6b of the metal pillar 6. As a result, the wiring width of the portion of the metal wiring 42 connected to the end portion 6b is formed smaller than the width of the metal wiring 42. The width of the end 6b of the column 6. However, like the first embodiment, the wiring width of the portion of the metal wiring 42 connected to the end portion 6 b may be formed larger than the width of the end portion 6 b of the metal pillar 6 .

Next, as shown in FIG. 11(B) , the substrate 50 is separated from the wiring layer 5 and the mold resin 3B (eighth step). Then, cutting is performed along the boundary line L between the unit areas. Thereby, a plurality of monolithic optical semiconductor packages 1B can be obtained.

(Effect) In the optical semiconductor package 1B, by filling the internal space S between the light-receiving element 2 and the substrate 50 with the molding resin 3B in the fifth step, the molding resin 3B covers the light-receiving part 21. However, since the molding resin 3B has Since the light receiving part 21 is transparent to the light to be detected, it is possible to suppress a decrease in the light receiving sensitivity due to the mold resin 3B covering the light receiving part 21 . Furthermore, in the fifth step, a single resin material can be used to fill the internal space S between the light-receiving element 2 and the substrate 50 and cover each component (the light-receiving element 2, the metal pillars 6, 7, and the wiring layer) at one time. 5) Molding resin 3B. Thereby, it is possible to avoid a decrease in reliability caused by the mixing of two types of resin parts (for example, two resin parts formed of different materials or formed at different points in time) (for example, due to a difference in thermal expansion coefficient of the two resin parts). Damage to metal wiring caused by stress, etc.). As described above, according to the above-mentioned manufacturing method, the optical semiconductor package 1B can be manufactured with high reliability. Furthermore, the light-receiving element 2 has a light-receiving surface on the first surface 2a. According to the above structure, the optical semiconductor package 1B in which the surface of the surface-illuminated light-receiving element 2 is the first surface 2a can be manufactured with high reliability.

Furthermore, in the above-mentioned manufacturing method of the optical semiconductor package 1B, by performing the fifth step under reduced pressure, the void-free mold resin 3B can be formed together without using a special device.

(Example of variation) The step (eighth step) of separating (peeling off) the substrate 50 from the wiring layer 5 and the like can be performed at any time after the fifth step is completed. For example, the substrate 50 can be directly removed after the fifth step is completed. Alternatively, step 8 may be performed at least after step 6. For example, step 7 can be implemented after step 6, and step 8 can be implemented after step 7. According to the above structure, by placing the substrate 50 in the mounted state also in the sixth step (or the sixth step and the seventh step), it is possible to implement the sixth step with high reliability while improving the support stability of each member. Steps and advantages of Step 7.

[Third Embodiment] (Structure of optical semiconductor package) As shown in FIG. 12 , the optical semiconductor package 1C of the third embodiment is different from the optical semiconductor package 1A in that it includes a wiring layer 5C instead of the wiring layer 5 . Hereinafter, the parts of the structure of the optical semiconductor package 1C that are different from the optical semiconductor package 1A will be described, and the description of the parts of the structure of the optical semiconductor package 1C that are the same as the optical semiconductor package 1A will be omitted.

The wiring layer 5C is different from the wiring layer 5 of the optical semiconductor package 1A in that it has an insulating layer 51C instead of the insulating layer 51 . The insulating layer 51C is different from the insulating layer 51 in that it is formed of a transparent resin insulating film and is not provided with the opening 51b. The insulating layer 51C is formed of a material that is transparent to the light to be detected by the light receiving unit 21 . The insulating layer 51C may be formed of, for example, transparent epoxy resin, transparent polyimide resin, or the like.

(Manufacturing method of optical semiconductor package) An example of the manufacturing steps of the optical semiconductor package 1C will be described with reference to FIGS. 13 to 15 . In this embodiment, the optical semiconductor package 1C is manufactured by the CoW method or the CoP method. Figures 13 to 15 show the state of one unit area in each manufacturing step. The following description focuses on only one unit area.

The manufacturing method of the optical semiconductor package 1C of this embodiment includes: The first step is to prepare the light-receiving element 2. The light-receiving element 2 has a first surface 2a provided with a light-receiving part 21 and an electrode terminal 22 electrically connected to the light-receiving part 21; The second step is to form a wiring layer 5C on the substrate 50. The wiring layer 5C includes an insulating layer 51C and metal wiring 52 that are transparent to the light that is the detection target of the light receiving part 21; The third step is to form a metal member (metal pillar 6) that is connected to the end 52a of the metal wiring 52 and protrudes from the wiring layer 5C toward the side opposite to the substrate 50 side; The fourth step is to arrange the light-receiving element 2 on the wiring layer 5C by electrically connecting the end 52b of the metal wiring 52 to the electrode terminal 22; The fifth step is to form a resin part (molding resin 3) covering the light-receiving element 2, the metal pillar 6, and the wiring layer 5C; The sixth step is to expose the second surface 2b of the light-receiving element 2 and the end 6b of the metal pillar 6 by grinding or grinding the molding resin 3 from the side opposite to the second surface 2b of the light-receiving element 2; The seventh step is to form metal wiring including electrical connections with the end 6b of the metal pillar 6 on the second surface 2b of the light-receiving element 2 and the end surface 3b of the molding resin 3 that is continuous with the second surface 2b. Wiring layer 4 of 42; and The eighth step is to separate the substrate 50 from the wiring layer 5C and the mold resin 3 .

First, the light-receiving element 2 is prepared (see (B) of FIG. 13 ) (first step). Next, as shown in FIG. 13(A) , the wiring layer 5C is formed on the substrate 50 as the temporary bonding member (second step). As described above, the wiring layer 5C has the insulating layer 51C and the metal wiring 52 . For example, by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 51C and pattern the metal wiring 52, the wiring layer shown in FIG. 13(A) can be obtained. 5C. Furthermore, in this embodiment, the width of the opening 51a of the insulating layer 51C is formed larger than the width of the end portion 6a of the metal pillar 6. As a result, the wiring width of the portion of the metal wiring 52 connected to the end portion 6a is formed larger than the width of the metal wiring 52. The width of the end 6a of the column 6. However, similarly to the second embodiment, the wiring width of the portion of the metal wiring 52 connected to the end portion 6 a may be formed smaller than the width of the end portion 6 a of the metal pillar 6 .

Next, as shown in FIG. 13(A) , the metal pillar 6 is connected to the end portion 52 a of the metal wiring 52 and protrudes from the wiring layer 5C toward the side opposite to the substrate 50 side (third step). The metal pillar 6 is formed by, for example, plating processing, solder bump forming processing, or the like.

Next, as shown in FIG. 13(B) , the light-receiving element 2 is arranged on the wiring layer 5C such that the end portion 52b of the metal wiring 52 is electrically connected to the electrode terminal 22 (the fourth step). The end portion 52b and the electrode terminal 22 are connected by, for example, bump bonding. Thereby, the insulating layer 51C and the insulating layer 23 are in contact with each other, and no gap is formed between the insulating layer 51C and the insulating layer 23 . Furthermore, the end portion 52b and the electrode terminal 22 can be connected by a mixed bonding using copper and an insulating film.

Next, as shown in FIG. 14(A) , the mold resin 3 is formed (fifth step). The mold resin 3 is formed to cover the light-receiving element 2, the metal pillar 6, and the wiring layer 5C.

Next, as shown in FIG. 14(B) , by grinding or grinding the molding resin 3 from the side opposite to the second surface 2b of the light-receiving element 2 (that is, the end surface 3b side), the second surface of the light-receiving element 2 is The surface 2b and the end 6b of the metal pillar 6 are exposed (step 6). At this time, in each unit area, the second surface 2b of the light-receiving element 2 may also be ground or ground together with the end surface 3b of the molding resin 3. Similarly, the end 6b of the metal pillar 6 can also be ground or ground. That is, after the second surface 2b of the light-receiving element 2 or the end 6b of the metal pillar 6 in each unit area is exposed by grinding or grinding the end surface 3b of the molding resin 3, the molding resin 3 can be continued to be exposed. The end surface 3b is ground or ground together with the second surface 2b or the end 6b. As a result, as shown in FIG. 14(B) , the second surface 2b of the light-receiving element 2 and the end portion 6b of the metal pillar 6 are exposed to the outside. Through the above processing, the second surface 2b of the light-receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molding resin 3 become substantially the same plane.

Next, as shown in FIG. 15(A) , the wiring layer 4 is formed on the second surface 2b of the light-receiving element 2 and the end surface 3b of the molding resin 3 that is continuous with the second surface 2b (step 7). In this embodiment, the insulating layer 41 and the metal wiring 42 are formed on the second surface 2b of the light-receiving element 2, the end portion 6b of the metal pillar 6, and the end surface 3b of the molding resin 3. Furthermore, electroless plating is performed on the outer end portion of the metal wiring 42 to form a plated portion 43 on the surface of the outer end portion.

For example, from the state shown in FIG. 14(B) , by using a semiconductor process (seed layer formation, photolithography, electrolytic plating, etc.) to pattern the insulating layer 41 and pattern the metal wiring 42, it is possible to The structure shown in (A) of Fig. 15 was obtained. Furthermore, in this embodiment, the width of the opening 41a of the insulating layer 41 is formed larger than the width of the end portion 6b of the metal pillar 6. As a result, the wiring width of the portion of the metal wiring 42 connected to the end portion 6b is formed larger than the width of the metal wiring 42. The width of the end 6b of the column 6. However, like the second embodiment, the wiring width of the portion of the metal wiring 42 connected to the end portion 6 b may be formed smaller than the width of the end portion 6 b of the metal pillar 6 .

Next, as shown in FIG. 15(B) , the substrate 50 is separated from the wiring layer 5 and the mold resin 3 (eighth step). Then, cutting is performed along the boundary line L between the unit areas. Thereby, a plurality of single-chip optical semiconductor packages 1C can be obtained.

According to the manufacturing method as described above, the wiring layer 5 on the front side (first surface 2a side) of the light-receiving element 2 can be produced first, and then the light-receiving element 2 can be mounted (chip mounting) and resin molded (mold resin 3 The optical semiconductor package 1C is manufactured by following the steps of forming the wiring layer 4 on the back side (the second surface 2b side) of the light-receiving element 2 . Furthermore, in the above-mentioned manufacturing method, the step of separating (peeling off) the substrate 50 from the wiring layer 5 and the like (the eighth step) can be performed at any time after the completion of the fifth step. For example, the substrate 50 can be removed directly after the fifth step is completed. However, by having the substrate 50 in the mounted state also in the sixth and seventh steps, there is an advantage that the sixth and seventh steps can be performed with high reliability while improving the support stability of each component.

In the above-mentioned manufacturing method of optical semiconductor package 1C, by replacing "wiring layer 5C" and "insulating layer 51C" with "wiring layer 5" and "insulating layer 51", and replacing the steps shown in Figure 13 with The steps shown in FIG. 16 can manufacture an optical semiconductor package having the same structure as the optical semiconductor package 1A.

More specifically, the second step of the above-mentioned manufacturing method of the optical semiconductor package 1C is replaced with "the second step, which is to form a wiring layer including an insulating layer 51 and a metal wiring 52 and having an opening 51b for exposing the substrate 50 5 is formed on the substrate 50". Thereby, when the third step is completed, the structure shown in (A) of FIG. 16 can be obtained instead of the structure shown in (A) of FIG. 13 .

In addition, the fourth step of the above-mentioned manufacturing method of the optical semiconductor package 1C is replaced with "the fourth step, in which the end portion 52b of the metal wiring 52 is electrically connected to the electrode terminal 22, and the light receiving portion 21 is arranged with the opening 51b The light-receiving element 2 is arranged on the wiring layer 5 in such a manner that a closed space S1 is formed between the substrate 50 and the light-receiving element 2 at opposite positions." Thereby, when the fourth step is completed, the structure shown in (B) of FIG. 16 can be obtained instead of the structure shown in (B) of FIG. 13 . Here, the closed space S1 is set as a closed space surrounded by the substrate 50 , the insulating layer 23 and the insulating layer 51 . Therefore, in the fifth step, the mold resin 3 is formed to cover the light-receiving element 2, the metal pillar 6, and the wiring layer 5, and the closed space S1 is not filled with the mold resin 3. As a result, at the subsequent 6th to 8th steps and at the time when cutting is completed, an optical semiconductor package having the same structure as the optical semiconductor package 1A shown in FIG. 1 can be obtained.

Some embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments. The materials and shapes of each component are not limited to the above-mentioned materials and shapes, and a variety of materials and shapes can be used. In addition, some of the configurations in the above-mentioned embodiment or modifications may be arbitrarily applied to the configurations in other embodiments or modifications. For example, as shown in the above-mentioned embodiment, the substrate 50 can be suitably used as the temporary joining member, but the temporary joining member may be a member other than the substrate. For example, a sheet member (eg, a sheet-like very thin member) may be used as the temporary joining member. In addition, in the above-described embodiment, the manufacturing method using the CoW method or the CoP method is exemplified, but methods other than the above can also be used. For example, when optical semiconductor packages are manufactured on a wafer basis, the cutting step in the above embodiment can be omitted.

1A, 1B, 1C: Optical semiconductor packaging 2:Light-receiving element 2a:Side 1 2b: Side 2 3,3B:Molding resin (resin part) 3a: End face 3b: End face 4: Wiring layer (1st wiring layer, 2nd wiring layer) 5: Wiring layer (1st wiring layer, 2nd wiring layer) 5C: Wiring layer 6,6A: Metal pillar (metal component) 6a: End (1st end) 6b: End (2nd end) 7:Metal pillar 7a: end 7b: end 21:Light receiving part 22:Electrode terminal 23:Insulation layer 23a: Open your mouth 41:Insulation layer 41a:Open your mouth 42: Metal wiring (first metal wiring, second metal wiring) 43:Plating Department 50:Substrate 50a: Temporary joint surface 51:Insulation layer 51a:Open your mouth 51b: opening 51C: Insulation layer 52: Metal wiring (first metal wiring, second metal wiring) 52a: End (1st end) 52b: End (2nd end) 61: Shaft 62:Flange part 62a:Inner surface 100: Support components 101: Plate-like components 101a:Through hole 102:Support substrate L: boundary line S: internal space S1: Enclosed space w11: Wiring width w12:width w21: Wiring width w22:width

FIG. 1 is a cross-sectional view of the optical semiconductor package according to the first embodiment. FIG. 2 is a diagram showing an example of manufacturing steps of the optical semiconductor package of FIG. 1 . 3(A) to (C) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 1 . FIG. 4 is a diagram showing an example of manufacturing steps of the optical semiconductor package of FIG. 1 . 5 (A) and (B) are diagrams showing an example of the manufacturing steps of the optical semiconductor package of FIG. 1 . 6 (A) and (B) are diagrams showing an example of the manufacturing steps of the optical semiconductor package of FIG. 1 . 7(A) and (B) are diagrams showing an example of the manufacturing steps of the optical semiconductor package of FIG. 1 . FIG. 8 is a cross-sectional view of the optical semiconductor package according to the second embodiment. 9(A) and (B) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 8 . FIGS. 10(A) and 10(B) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 8 . 11(A) and (B) are diagrams showing an example of the manufacturing steps of the optical semiconductor package of FIG. 8 . FIG. 12 is a cross-sectional view of the optical semiconductor package according to the third embodiment. 13(A) and (B) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 12 . 14(A) and (B) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 12 . 15(A) and (B) are diagrams showing an example of manufacturing steps of the optical semiconductor package of FIG. 12 . FIGS. 16(A) and 16(B) are diagrams showing variations of the manufacturing method of the optical semiconductor package of FIG. 1 .

1A: Optical semiconductor packaging

2:Light-receiving element

2a:Side 1

2b: Side 2

3:Molding resin (resin part)

3a: End face

3b: End face

4: Wiring layer (1st wiring layer, 2nd wiring layer)

5: Wiring layer (1st wiring layer, 2nd wiring layer)

6: Metal pillar (metal component)

6a: End (1st end)

6b: End (2nd end)

21:Light receiving part

22:Electrode terminal

23:Insulation layer

23a: Open your mouth

41:Insulation layer

41a:Open your mouth

42: Metal wiring (first metal wiring, second metal wiring)

43:Plating Department

51:Insulation layer

51a: Open your mouth

51b: opening

52: Metal wiring (first metal wiring, second metal wiring)

w11: Wiring width

w12:width

w21: Wiring width

w22:width

Claims (15)

A manufacturing method for optical semiconductor packaging, which includes: The first step is to temporarily join a light-receiving element having a first surface provided with a light-receiving part and an electrode terminal electrically connected to the light-receiving part, and a first end of a columnar metal member to a substrate, and use the above-mentioned Temporarily bonding the light-receiving element to the above-mentioned substrate with the first surface facing the above-mentioned substrate; The second step is to form a resin portion covering the light-receiving element and the metal member on the substrate; The third step is to grind or grind the resin portion from the side facing the second surface opposite to the first surface of the light-receiving element, so that the second surface of the light-receiving element and the metal member The second end on the opposite side to the above-mentioned first end is exposed; The fourth step is to form a first metal wiring including a first metal wiring electrically connected to the second end on the second surface of the light-receiving element and the end surface of the resin portion continuous with the second surface. 1 wiring layer; The fifth step is to separate the above-mentioned substrate from the above-mentioned light-receiving element, the above-mentioned metal member, and the above-mentioned resin part; and The sixth step, after the fifth step, is to form an electrical connection between the first end portion and the electrode terminal on the side opposite to the side where the first wiring layer is located with respect to the light-receiving element and the resin portion. The second wiring layer of the connected second metal wiring. The manufacturing method of optical semiconductor package as claimed in claim 1, wherein Step 1 above includes the following steps: The above-mentioned metal member is positioned and supported by a supporting member in a state in which the above-mentioned first end is exposed; and The first end portion is temporarily joined to the substrate by bringing the temporary joining surface of the substrate into contact with the first end portion of the metal member supported by the supporting member. The manufacturing method of optical semiconductor package as claimed in claim 2, wherein The above support components include: A plate-shaped member formed with a through-hole having a width larger than the width of the above-mentioned metal member; and A support substrate for placing and supporting the above-mentioned second end; The metal member is inserted into the through hole of the plate-shaped member to be positioned, and is supported on the support substrate; In a state where the metal member is supported by the support member, the first end protrudes toward the side opposite to the support substrate side with respect to the plate-shaped member. The manufacturing method of optical semiconductor package as claimed in claim 2, wherein The metal member has a shaft part including the second end part, and a flange part including the first end part and formed wider than the shaft part; The support member is a plate-shaped member, and is formed with a through hole having a width larger than the width of the shaft portion and smaller than the width of the flange portion; The metal member is supported on the support member by the shaft portion being inserted into the through hole and the inner surface of the second end side of the flange portion being in contact with the peripheral edge portion of the through hole of the support member. The manufacturing method of an optical semiconductor package as claimed in any one of items 1 to 4, wherein In the fourth step, the first wiring layer is formed such that the wiring width of the portion of the first metal wiring connected to the second end is larger than the width of the second end of the metal member. The manufacturing method of an optical semiconductor package as claimed in any one of items 1 to 4, wherein In the fourth step, the first wiring layer is formed such that the wiring width of the portion of the first metal wiring connected to the second end is smaller than the width of the second end of the metal member. The manufacturing method of an optical semiconductor package as claimed in any one of items 1 to 6, wherein In the sixth step, the second wiring layer is formed such that the wiring width of the portion of the second metal wiring connected to the first end is larger than the width of the first end of the metal member. The manufacturing method of an optical semiconductor package as claimed in any one of items 1 to 6, wherein In the sixth step, the second wiring layer is formed such that the wiring width of the portion of the second metal wiring connected to the first end is smaller than the width of the first end of the metal member. The manufacturing method of an optical semiconductor package as claimed in any one of items 1 to 8, wherein The above-mentioned step 5 shall be carried out at least after the above-mentioned step 3. The manufacturing method of the optical semiconductor package of claim 9, wherein The above-mentioned step 4 is implemented after the above-mentioned step 3, The above-mentioned step 5 is implemented after the above-mentioned step 4. The manufacturing method of an optical semiconductor package according to any one of claims 1 to 10, wherein The light-receiving element has a light-receiving surface on the first surface. A manufacturing method for optical semiconductor packaging, which includes: The first step is to form a first wiring layer on a substrate that includes a first metal wiring and is provided with an opening for exposing the substrate; The second step is to form a metal member connected to the first end of the first metal wiring and protruding from the first wiring layer toward the side opposite to the substrate side; The third step is to prepare a light-receiving element, which has a first surface provided with a light-receiving part and an electrode terminal electrically connected to the light-receiving part; The fourth step is to electrically connect the second end of the first metal wiring, which is different from the first end, to the electrode terminal, and the light-receiving part is disposed at a position opposite to the opening. The above-mentioned light-receiving element is arranged in such a manner that an internal space is formed between the substrate and the above-mentioned light-receiving element; The fifth step is to form a resin part that covers the light-receiving element, the metal member, and the first wiring layer and fills the internal space, and has transparency with respect to light that is a detection target of the light-receiving part; The sixth step is to connect the above-mentioned second surface and the above-mentioned metal member to the above-mentioned surface by grinding or grinding the above-mentioned resin part from the side facing the second surface on the opposite side to the above-mentioned first surface of the above-mentioned light-receiving element. The end of the first metal wiring on the opposite side is exposed; The seventh step is to form a second metal wiring including a second metal wiring electrically connected to the end of the metal member on the second surface of the light-receiving element and the end surface of the resin portion continuous with the second surface. the second wiring layer; and The eighth step is to separate the substrate from the first wiring layer and the resin portion. The manufacturing method of optical semiconductor package as claimed in claim 12, wherein The above-mentioned step 8 is performed at least after the above-mentioned step 6. The manufacturing method of optical semiconductor package as claimed in claim 12, wherein The above-mentioned step 7 is implemented after the above-mentioned step 6, The above-mentioned step 8 is implemented after the above-mentioned step 7. The manufacturing method of an optical semiconductor package as claimed in any one of items 12 to 14, wherein The light-receiving element has a light-receiving surface on the first surface.