TWI555105B - Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation - Google Patents

Description

Fabrication of microelectronic components with stacked terminals that are coupled through a sealed connector [Reciprocal Reference of Related Applications]

This application is a continuation-in-part of U.S. Application Serial No. 13/942,568, filed on Jan. 15, 2013, the disclosure of which is hereby incorporated by reference.

The invention relates to the packaging of microelectronic components, in particular the packaging of semiconductor wafers.

Microelectronic components typically comprise a thin sheet of a semiconductor material, such as germanium or gallium arsenide, commonly referred to as a die or semiconductor wafer. Semiconductor wafers are typically provided as individual pre-packaged units. In some cell designs, a semiconductor wafer is mounted to a substrate or wafer carrier and then mounted on a circuit board, such as a printed circuit board.

The active circuit is fabricated in a first side (eg, a front surface) of the semiconductor wafer. For electrical connection of the active circuit, the wafer is provided with bond pads on the same face. Bond pad The array is then placed around the edges of the die or at the center of the die for many memory devices. The bond pads are typically made of a conductive metal, such as copper or aluminum, about 0.5 microns (μm) thick. The bond pads can comprise a single layer or multiple layers of metal. The size of the bond pads will vary with the type of device, but is typically tens to hundreds of microns from the sides.

Microelectronic components such as semiconductor wafers typically require many input and output connections to other electronic components. The input and output contacts of a semiconductor wafer or other similar device are typically arranged in a grid-like pattern (commonly referred to as an "area array") that substantially covers the surface of the wafer or is arranged in an elongated column that can be extended Parallel to each edge of the front surface of the wafer and adjacent to each edge, or at the center of the front surface. Semiconductor wafers are typically disposed in a package that facilitates processing of the wafer during fabrication and during mounting of the wafer on an external substrate, such as a circuit board or other circuit board. For example, many semiconductor wafers are placed in a package suitable for surface mounting. Several packages of this general type have been proposed for a variety of applications. Generally, such packages comprise a dielectric component (commonly referred to as a "wafer carrier") having terminals formed in a plate or etched metal structure on the dielectric. These terminals are typically connected to the contacts of the wafer itself by features such as thin traces extending along the wafer carrier itself and by thin leads or wires extending between the wafer contacts and the terminals or traces. In a surface mount operation, the package is placed on a circuit board such that each terminal on the package is aligned with a corresponding pad on the circuit board. Solder or other bonding material is disposed between the terminal and the pad. The package can be permanently engaged in positioning by heating the assembly to melt or "reflow" the solder or activate the bonding material.

Many packages contain solder bumps in the form of solder balls, typically between about 0.1 mm and about 0.8 mm (5 and 30 mils) in diameter, attached to the terminals of the package. A package having a solder ball array protruding from its bottom surface is commonly referred to as a ball grid array or "BGA (ball grid array)" Package. Other packages, referred to as planar grid arrays or "LGA (land grid array) packages), are secured to the substrate by a thin layer or plane formed from solder. This package can be very small. Some packages (often referred to as "wafer level packages") occupy an area of the board that is equal to (or only slightly larger than) the area of the device incorporated in the package. This is advantageous because it reduces the overall size of the assembly and allows for the use of short interconnections between the various devices on the substrate, which in turn limits the signal transmission time between the devices and thus facilitates operation of the assembly at high speeds.

Packaged semiconductor wafers are typically arranged in a "stacked" configuration in which, for example, a package is provided on a circuit board and another package is mounted on top of the first package. These configurations may allow multiple different wafers to be mounted within a single area of the board and may additionally facilitate high speed operation by providing short interconnects between the packages. Typically, this interconnect distance is only slightly greater than the thickness of the wafer itself. In order to achieve interconnections within the stack of wafer packages, it is desirable to provide structures for mechanical and electrical connections on both sides of each package (with the exception of the topmost package). This has been done, for example, by providing pads or planes on both sides of the substrate on which the wafer is mounted, the pads being connected through the substrate by conductive vias or the like. An example of a stacked wafer configuration and interconnect structure is provided in U.S. Patent Application Publication No. 2010/0232129, the disclosure of which is incorporated herein by reference.

The size is an important consideration for any physical configuration of the wafer. With the rapid development of portable electronic devices, the need for tighter physical configurations of wafers has become more intense. By way of example only, devices commonly referred to as "smart phones" integrate mobile phones with powerful data processors, memory, and auxiliary devices (eg, GPS receivers, electronic cameras, and regional network connections, There are also functions of high resolution displays and associated image processing wafers. Such a device can provide, for example, a complete internet connection, entertainment with full resolution video, Navigation, e-banking, and more, all in a pocket-sized device. Complex portable devices require many wafers to be packaged into a small space. In addition, some wafers have many input and output connections, commonly referred to as "I/O." These I/Os must be interconnected to the I/O of other wafers. The interconnect should be short and should have low impedance to minimize signal propagation delay. Forming interconnected components should not greatly increase the size of the components. Similar requirements are also found in other applications, such as those in data servers, such as those used in Internet search engines. For example, providing a structure of many short, low impedance interconnects between complex wafers can increase the bandwidth of the search engine and reduce its power consumption.

Although advances have been made, further improvements can be made to facilitate microelectronic package structures with stacked terminals and processes for making such packages.

In accordance with an aspect of the present invention, a method of making a microelectronic assembly is provided. In this method, a first subassembly can be processed such that an end of the electrically conductive first connector of the first subassembly protrudes into a temporary layer, the first connectors extending away from the first subassembly One of the first support members is oriented in one direction. Forming a first insulating structure of the first subassembly, comprising: flowing a first dielectric material into a space between the temporary layer and the individual first connector between the support element, and at least partially The first dielectric material is cured. The temporary layer can then be removed such that the ends of the first connectors project beyond a surface of the first insulating structure of the first subassembly. Thereafter, the first connector and the conductive second connector of a second subassembly collocated therewith may be combined to form an assembly, wherein at least one of the first and second subassemblies has at least one microelectronic component Attached to the inner surface of the individual support element surface. A second insulating structure can then be formed comprising: flowing a second dielectric material into a space between adjacent ones of the second connectors and between the first connectors joined thereto.

In accordance with another aspect of the present invention, a method of fabricating a microelectronic assembly is provided. The method can include embedding a portion of the electrically conductive first block of a first subassembly in a film, the first block extending in a direction away from one of the first support members of the first subassembly. A first seal can be formed comprising: flowing a first sealant into the space between the individual first blocks between the film and the support member and at least partially curing the first sealant. The film can then be removed such that the first pieces protrude beyond a surface of the first seal. The first subassembly and a second subassembly can then be combined to form a component. The second subassembly can include a second support member and a conductive connector at a surface thereof, wherein the combining includes: engaging the first block at the second subassembly at a position beyond the first seal The electrically conductive connectors. At least one of the subassemblies can have at least one microelectronic component mounted to an inwardly facing surface of the individual support component. Forming a second seal, comprising: flowing a second encapsulant into a space between an adjacent one of the electrically conductive connectors and the portions of the first block joined thereto, and at least a portion The second sealant is cured.

10‧‧‧Microelectronics package

12‧‧‧External components

14‧‧‧ components

16‧‧‧External components

21, 22‧‧‧ subcomponents

101, 105‧‧‧ first surface

102‧‧‧First support element

103, 106‧‧‧ second surface

104‧‧‧Second support element

120‧‧‧Microelectronic components

121‧‧‧Bumps

122‧‧‧ front

124‧‧‧Contacts

125‧‧‧ face

126‧‧‧Contacts

127‧‧‧ edge

128‧‧‧Main surface

129‧‧‧ surface

130‧‧‧Microelectronic components

132‧‧‧Edge surface

134‧‧‧Main surface

141‧‧‧ terminals

142, 142'‧‧‧ terminals

144‧‧‧Electrical block

146‧‧‧ Engagement components

147‧‧‧Contacts

148‧‧‧Contacts

150‧‧‧ Seal

152‧‧‧Second seal

153, 154‧‧‧ surface

155‧‧‧ openings

156‧‧‧ Strengthening ring

Section 157‧‧‧

159‧‧‧ slot

161‧‧‧First connector

162, 162b‧‧‧ second connector

163, 163', 164, 164' ‧ ‧ end

166‧‧‧Conductive components

169‧‧‧ third connector

171, 172‧‧‧ core

178, 179‧‧ Directions

180‧‧‧ Direction

181‧‧‧First connector (first column)

182‧‧‧Second connector (second column)

183, 184‧‧‧ vertical dimensions

185, 186 ‧ ‧ width

191‧‧‧First connector

192‧‧‧Second connector

210‧‧‧Microelectronics package

221‧‧‧First connector

222‧‧‧Second connector

231‧‧‧Electrical block

241‧‧‧First terminal

263‧‧‧ end

264, 264'‧‧‧ end

281‧‧‧First column

282‧‧‧second column

285‧‧‧Edge surface

291‧‧‧Electrical block

302‧‧‧Support components

320‧‧‧Second microelectronic components

321‧‧‧Subcomponents

352‧‧‧ Seal

381‧‧‧First connector

382‧‧‧Second connector

410‧‧‧Microelectronics package

500‧‧‧ system

501‧‧‧shell

502‧‧‧ circuit board

504‧‧‧Conductor

506‧‧‧ structure

508, 510‧‧‧ Electronic components

511‧‧‧ lens

610‧‧‧Microelectronics package

650‧‧‧First seal

910‧‧‧Microelectronics package

950‧‧‧ Seal

952‧‧‧Second seal

953, 954‧‧‧ surface

962‧‧‧Second connector

982‧‧‧Metal column

1010‧‧‧Microelectronics package

1110‧‧‧ components

1210‧‧‧ components

1252‧‧‧ Seal

1310‧‧‧ components

1410‧‧‧ components

1510‧‧‧ components

1550‧‧‧ third seal

1708‧‧‧ Temporary layer

1711‧‧‧ inner surface

1710, 1712‧‧‧ mold board

1720‧‧‧ Cavity

1721‧‧‧First subcomponent

1723‧‧‧First subcomponent

1725‧‧‧Second subcomponent

1730‧‧‧Conductive components

1732‧‧‧Connector

End of 1734‧‧

1736‧‧‧Maximum height

1740‧‧‧Package

1742‧‧‧Insulation structure

1744‧‧‧ surface

1752‧‧‧ Third insulation structure

1756‧‧‧Maximum height

1761‧‧ subcomponent

1762‧‧‧Second connector

End of 1764‧‧

1765‧‧‧subcomponent

1767‧‧‧Second subcomponent

1768‧‧‧temporary layer

1769‧‧‧ inner surface

1770, 1772‧‧‧ mold board

1773‧‧‧ surface

1774‧‧‧Insulation structure

1780‧‧‧ components

a, b‧‧‧ spacing

H‧‧‧ gap height

1A is a cross-sectional view of a microelectronic package of the preferred embodiment of the present invention.

Fig. 1B is a top plan view of Fig. 1A with a plurality of terminals on the surface of the support member.

Figure 2 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 3 is a cross-sectional view of the microelectronic assembly of the preferred embodiment of the present invention.

4A is a cross-sectional view of the first A-B diagram, showing a microelectronic package of a variation of the embodiment of the present invention.

Figure 4B is a top plan view of Figure 4A with the stacked terminals of the microelectronic package on the surface of the support member.

Figure 5 is a cross-sectional view of a microelectronic package of the preferred embodiment of the present invention.

Figure 6 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 7 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 8 is a cross-sectional view of the microelectronic assembly of the preferred embodiment of the present invention.

Figure 9 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 10 is a cross-sectional view of a microelectronic package of the preferred embodiment of the present invention.

Figure 11 is a cross-sectional view of a stage in a method of microelectronic packaging in accordance with a preferred embodiment of the present invention.

Figure 12 is a cross-sectional view of the stage in the method of fabricating a microelectronic package after the stage of Figure 11 of the preferred embodiment of the present invention.

Figure 13 is a cross-sectional view showing the stage in the method of fabricating a microelectronic package after the stage of Fig. 12 of the preferred embodiment of the present invention.

Figure 14 is a cross-sectional view showing the stage of the method of the microelectronic package of the modification of the eleventh embodiment of the preferred embodiment of the present invention.

Figure 15 is a cross-sectional view of a stage in a method of fabricating a microelectronic package in accordance with a preferred embodiment of the present invention.

Figure 16 is a cross-sectional view showing the stage in the method of fabricating a microelectronic package after the fifteenth stage of the preferred embodiment of the present invention.

Figure 17 is a diagram showing the method of manufacturing a microelectronic package after the stage of the 16th embodiment of the preferred embodiment of the present invention. Stage profile view.

Figure 18 is a cross-sectional view showing the stage of the method of the microelectronic package of the modification of the fifteenth embodiment of the preferred embodiment of the present invention.

Figure 19 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 20 is a cross-sectional view of the microelectronic package of the preferred embodiment of the present invention.

Figure 21 is a cross-sectional view of the stage in the method of the microelectronic assembly of the preferred embodiment of the present invention.

Figure 22 is a cross-sectional view showing a microelectronic assembly formed by the method of Figure 21 of the preferred embodiment of the present invention.

Fig. 23 is a modification of Fig. 21 of the preferred embodiment of the present invention.

Figure 24 is a variation of Figure 21 of the preferred embodiment of the present invention.

Figure 25 is a diagram showing a microelectronic assembly formed by the method of Figure 24 of the preferred embodiment of the present invention.

Figure 26 is a cross-sectional view showing the stage of the method of the microelectronic assembly of the modification of the preferred embodiment 11-14.

Figure 27 is a diagram showing a microelectronic assembly formed by the method of Figure 26 of the preferred embodiment of the present invention.

Figures 28-29 show the stages in the method of the microelectronic assembly of the variation of Figures 11-14 of the preferred embodiment of the present invention.

Figure 30 is a diagram showing the microelectronic assembly formed by the method of Figures 28-29 of the preferred embodiment of the present invention.

31-36 are sequential cross-sectional views of the method of the microelectronic assembly of the preferred embodiment of the present invention.

37-40 are cross-sectional views of successive stages in a method of a microelectronic assembly in accordance with a variation of the 31st to 36th preferred embodiments of the preferred embodiment.

Figure 41 is a schematic diagram of the system of the preferred embodiment of the present invention.

Accordingly, embodiments of the present invention provide an improved assembly including a microelectronic component and having a first terminal and a second terminal (eg, a top terminal and a bottom terminal), wherein the vertical interconnection of the top terminal and the bottom terminal is electrically coupled Providing the desired gap height while also allowing the vertical interconnects to be tightly packed in the horizontal direction at the desired pitch, the horizontal direction being parallel to the surface of the microelectronic component in the assembly. Referring to the microelectronic assembly or microelectronic package of Figures 1A-B, in one example, the gap height H between the second surfaces of the support members is greater than the first of at least one of the directions parallel to the second surface of the first support member. The pitch of the connector is "a". In another example, the gap height can be equal to or greater than 1.5 times the pitch.

As further seen in FIG. 1A, the microelectronic package 10 includes a first support member 102 and a second support member 104. Each support element can be, for example, a package substrate, such as a wafer carrier or a dielectric element or a combination of two or more dielectric, semiconductor, and conductive materials, on which conductive structures such as terminals, traces, Contacts, and through holes. For example, one or two supporting members may be a dielectric element comprising a sheet or a plate, which comprises at least one of an inorganic or organic dielectric material, and which may mainly comprise or mainly comprise a polymeric material, or It can be a synthetic structure comprising both inorganic and polymeric materials. Thus, for example, without limitation, one or both of the support elements can comprise a dielectric element comprising a polymeric material such as a polyimide, a polyamide, an epoxy, a thermoplastic, a thermoset, and the like. Alternatively, one or both of the support elements may comprise a dielectric element comprising an inorganic dielectric material such as an oxide of cerium, a nitride of cerium, a carbide of cerium, cerium oxynitride, aluminum oxide, and one or two The support elements can comprise a semiconductor material (e.g., tantalum, niobium, or carbon, etc.), or a combination of one or more such inorganic materials. In another example, one or both of the support elements can comprise a dielectric element that is one or more polymeric materials and one or A combination of more inorganic materials, such as the materials described above. In a specific example, one or both of the support members may have a glass reinforced epoxy structure, such as a plate structure commonly referred to as "FR-4" or "BT resin." In another example, one or both of the support elements can be substantially composed of a polymeric material, such as polyimide, for example. One or both of the support members may comprise one or more layers of compliant material, which in some instances may be exposed to the first surface, the second surface, or both the first and second surfaces of such support members At the office. The compliant material may, in some examples, comprise polyimide, polyamide, which typically has a Young modulus of less than 2.0 Giga Pascals (GPa), or in some instances, the compliant material may comprise An elastomer that is significantly lower (eg, well below) Young's modulus of 1.0 GPa.

As seen in Figure 1A, each support element has first and second opposing facing surfaces. When assembled in the package 10, the first surfaces 101, 105 of the support elements are facing away from each other, and the second surfaces 103, 106 face inwardly toward each other. Microelectronic component 120 (which may be an unpackaged or packaged semiconductor wafer) is mounted to the second surface of one or both support members 102,104. In a specific embodiment, the microelectronic component can be a semiconductor wafer having an additional conductive structure at its face that is coupled to the die pad. Although not shown, in one embodiment, the second microelectronic component can be mounted in a space above the surface 129 of the microelectronic component 120 of the support component 104. The second microelectronic element can be positioned between the surface 103 of the first support element 102 and the surface 129.

The microelectronic component can be electrically coupled to the conductive component of the surface 106 of the second support component 104. When used in reference to a component in this disclosure, such as an interposer, microelectronic component, circuit board, substrate, etc., the statement that the conductive component is "on" the surface of the component means that the component is electrically conductive when it is not assembled in any other component. The component can be used to contact a theoretical point that moves in a direction perpendicular to the surface of the component, from the exterior of the component toward the surface of the component. Therefore, on the substrate Terminals or other conductive elements at the surface may protrude from such surfaces; may be flush with such surfaces; or may be recessed into holes or recesses in the substrate relative to such surfaces. In one example, the "surface" of the component can be the surface of the dielectric structure; however, in particular embodiments, the surface can be other materials such as metal or other conductive or semiconductor materials.

In FIG. 1A, the direction parallel to the first surface 101 of the first support member is referred to herein as the first and second lateral directions 178, 179 or the "horizontal" or "lateral" direction, and perpendicular to the first The direction 180 of the surface is referred to herein as the upward or downward direction and is also referred to herein as the "vertical" direction. The directions referred to herein are reference frames referenced by such structures. Thus, these directions can be located at any orientation of the normal or gravity reference frame. A statement that a feature is placed at a higher height above "a surface" than another feature means that one feature is at a greater distance than the other feature in the same orthogonal direction away from the surface. Conversely, a statement that a feature system is placed at a lower height above "a surface" than another feature means that a feature is a smaller distance than the other feature in the same orthogonal direction away from the surface. At the office.

Thus, in the example of FIG. 1A, microelectronic element 120 can be a flip-chip that is connected to contact 126 at surface 106 of support element 104. Microelectronic element 120 has a plurality of contacts 124 at front face 122, front face 122 facing second surface 106 of second support member 104, contact 124 facing and passing through bump 121 to engage corresponding contact 126 of second support member The bumps 121 may comprise bonding metals, or they may comprise other types of bonding elements, such as micropillars, posts, and the like. The junction may be in one or more columns extending in the first direction, one or more rows extending in a second direction across the first direction, or one or more columns and one or more The way of both lines is configured at the front 122. Such contacts may be disposed at any of the directions 178, 179 or may be disposed adjacent one or more of the one or more edges 127 of the microelectronic element In a column, in one or more rows, or in one or more columns and in one or more rows. In one specific example, the contacts 124 can be distributed across at least a portion of the front surface of the microelectronic element in an array of regions (contacts having two or more columns and having two or more rows). The underfill 115 can be positioned around an individual of the connections (e.g., bumps 121), which in some instances can be reinforced on the mechanism.

Alternatively, instead of a flip chip connection, the contacts 124 may be disposed in contacts and/or one or more rows aligned with one or more columns of holes or "Bond Window" (not shown) At the location within the joint, the aperture or "joining window" extends between the first and second surfaces 105, 106 of the support member 104. In such an example, the contacts 124 of the microelectronic component can be coupled to the terminals, such as the terminals 142, 142' at the first surface 105 of the second support component 104, through the leads that are bonded to the contacts 124. In one specific example, the leads can be wire leads (not shown), such as wire bonds, that extend through the holes and are joined to corresponding contacts (not shown) at the contacts 124 and the first surface 105. In another example, the leads can be leads that each include a first portion that extends along the first or second surface 105, 106 as a stitch, and a second portion that is integrated into the first portion, the second portion From this stitch extends into the area of the hole and is joined to the joint.

In yet another example, although not shown, the back surface 129 of the microelectronic component can be back-bound to the second surface 106 of the second support member, and the front surface 122 of the microelectronic component can be replaced The first surface 106 of the support member 104, wherein the contacts 124 of the microelectronic element face away from the second surface 106. In this example, the contacts 124 are electrically coupled to corresponding contacts at the second surface 106 of the second support member through a conductive structure that extends above the front surface 122 and extends beyond the edge 127 of the microelectronic component.

As further seen in FIG. 1A, the microelectronic package 10 can comprise a monolithic a seal 150 that forms a second surface 103 or 106 that contacts the support members of the first and second support members, and the seal 150 forms contact with at least one of: first and second support members a second surface of the other support member and a second seal forming a second surface that contacts the other support member. The seal 150 can form a second surface 103, 106 that contacts each of the first and second support members 102, 104.

As further seen in FIG. 1A, the microelectronic package 10 includes a pair of electrically conductive first connectors 161 projecting over the second surface 103 of the first support member 102, the electrically conductive first connector 161 being aligned and Mechanically and electrically coupled to the corresponding conductive second connector 162 , the conductive second connector 162 protrudes above the second surface 106 of the second support member 104 . The first package terminal 141 at the first surface 101 of the first support member 102 is permeable to an individual pair of first connectors 161 that are aligned and electrically coupled to (eg, bonded to) the second connector 162, The second package terminal 142 is electrically coupled to the first surface 105 of the second support member 104 .

As further seen in FIG. 1A, at least one of the first connector and the second connector comprises a conductive mass, such as a bonding metal block, such as tin, indium, solder or a eutectic material, or embedded in a polymer. A conductive matrix material of metal particles in the material. In a particular embodiment, the first connector, the second connector, or both may consist essentially of solder. In the particular embodiment illustrated in Figure 1, the first connector and the second connector may each comprise a bonding metal. In a specific example, one or both of the first and second connectors may comprise a solid core (eg, core 171 or core 172) on which the bonding metal may be disposed. Such solid cores 171, 172 can be used to promote or maintain a predetermined spacing between the second surfaces 103, 106 of the first and second support members 102, 104. The solid core can be a conductive, semiconductive or dielectric material, or a combination of one or more such materials. In a specific example, the solid core may be made of a non-solder material having It has solder wettability and can be coated with solder. In one example, the solid core may consist essentially of copper or other electrically conductive material having a higher melting temperature than when the first and second connectors are joined to each other, as will be described below.

In a specific embodiment, the solid cores may comprise or consist essentially of a solder having a melting point above the bonding temperature, and thus may have a higher melting point than the melting point of the solder coating the solid core. In another example, the solid core can consist essentially of a glass, ceramic or semiconductor material. A first connector having a solid core 171 can be aligned and bonded to a second connector that does not have a solid core. Conversely, a second connector having a solid core 172 can be aligned and bonded to a first connector that does not have a solid core. In another embodiment, although not shown, a first connector having a solid core can be aligned and bonded to a second connector having a solid core.

In various examples provided herein, it can be seen that the first connector and the second connector can have ends 163, 164, respectively, and the ends 163, 164 are second by the first and second support members. Their maximum height above the surface is defined and the end 163 of the first connector can be aligned and joined to the end 164 of the second connector. As further seen in FIG. 1A, in an example, the spacing "a" between the first terminals 141 at the first surface of the first support member 102 can be the same as at the first surface of the second support member 104. The spacing between the second terminals 142 is "a".

Referring to FIG. 2, in another example of the microelectronic package 210, the first connector 181, the second connector 182, or both may comprise substantially rigid solid metal posts (Rigid solid metal posts), solid metal studs Extending over the second surface of the individual support members. In an example, the post can consist essentially of copper. Typically, the posts have vertical dimensions 183, 184 in the vertical direction 180 of the thickness of the microelectronic assembly. Vertical dimensions typically range between 50 and 500 microns. The vertical dimension of each column is typically greater than the individual width 185 or 186 of such a column in the second direction 178. Half of the second direction 178 is parallel to the plane of the first or second component from which the post extends. In a particular embodiment, the post may be formed by a process comprising etching to remove material from the metal layer, which may facilitate fabrication of the package having the first post 181, the end 163' of the first post 181 having a height Coplanarity. Similarly, such treatment can facilitate the fabrication of a package having a second post 182 having a high degree of coplanarity. A typical etching process tends to form a frustoconical shaped column because material removal occurs in both the vertical 180 and lateral directions 178, 179. However, certain reduction treatments may reduce the extent of material removal in the lateral direction such that the pillars formed in this manner may have a greater degree of cylindrical shape. In yet another example, a pillar can be formed by plating a metal into an opening of a temporary layer (eg, a photoresist mask) and then removing the temporary layer. Solid or hollow metal posts can be produced from such plating processes.

The individual first or second connectors 191, 192 of the other support element to which the metal posts are joined may comprise a conductive block, such as a bond metal, such as solder, tin, indium or a eutectic material. In an example, the first connector 221, the second connector 222, or both may include stud bumps that protrude above the second surface of the individual support members. In a specific example, the stud bumps can be gold, copper, or can be substantially composed of copper. In an example, an electroplating coating or barrier layer of a metal (eg, palladium, titanium, tungsten, tantalum, cobalt, nickel, or a conductive metal compound, such as one or more compounds of such a metal) may be present in the column At the interface surface of the bump and the conductive block 231 to which it is coupled. In FIG. 2 and many other figures herein, other components and terminals of package 210 may be omitted from the particular views shown, but they may still be present.

3 is an assembly 14 of a microelectronic package 10 in which an external component 12 is stacked over the package 10 and electrically coupled to its first terminal 141. For example, the outer member 12 can have a contact 148 that is bonded to a conductive block 144 of metal (eg, tin, indium, Solder, or eutectic metal composition, etc.) is bonded to the first terminal 141. In an example, the outer component 12 can be a circuit slab having stitches and contacts thereon, and it can have additional components therein or coupled thereto. In some further examples, the external component can be a packaged or unpackaged microelectronic component. For example, component 12 can be a microelectronic package that includes a second microelectronic component 320 having a set of contacts 148 bonded to terminal 141.

As further shown in FIG. 3, the microelectronic package 10 can have conductive joining elements 146, such as bonding metal blocks (eg, solder, tin, indium, or eutectic materials, or attached to the second). Other such materials of terminal 142), bonding element 146 is used to bond microelectronic package 10 to contact 147 of external component 16. The outer component 16 can be, in some examples, a circuit slab having stitches and contacts thereon, and it can have additional components therein or coupled thereto. In some further examples, the external component can be a packaged or unpackaged microelectronic component.

4A-B is a variation of the microelectronic package of FIG. 1A-B. In the microelectronic package 410, the pitch "b" of the first terminal 141 in the second direction 178 may be different from the second terminal in the second direction. The spacing is "a". The pitch of the first terminals 141 may also be different from the pitch of the second terminals in the third direction 179, which is parallel to the first surface 101 and traverses the first and second directions. Thus, as shown, the pitch of the first terminals may be greater than the pitch of the second terminals in the second or third direction or both. Alternatively, the pitch of the first terminals may be smaller than the pitch of the second terminals in the second direction or the third direction or both. In any or all of the embodiments provided herein, the relationship between the spacing of the first terminal and the second terminal can be as described herein in relation to Figures 1A-B above, or as described herein in relation to Figures 4A and 4B. Said.

Figure 5 is a variation of the microelectronic package of Figure 1A-B, where the first and second connections The connector is depicted in the form of a first post 281 and a second post 282 of substantially rigid solid metal, each of the first post 281 and the second post 282 having a structure as described above in relation to FIG. . However, in this example, the end 263 of the first post 281 is aligned with and engages the corresponding end 264 of the second post 282. In the illustrated example, the conductive bumps 291 that contact the ends of the posts and the edge surfaces 285 can engage the first and second posts of each pair. However, in a particular example, the ends 281, 282 can be joined together by metal to metal bonding or diffusion bonding without the use of solder.

Figure 5 further illustrates that the connector (e.g., the second connector 382 that protrudes above the second surface of the second support member 104) can be in the form of a substantially rigid solid metal post, and the first connector 381 can Contact is formed by depositing metal to contact end 264' of second connector 382, such as by plating metal to contact end 264'. In one example, the first terminal 241 can be formed by a plating process that forms a metal layer of the first connector 381 and the first terminal at the same time.

6 is a variation of FIG. 1A-B or 4A-B, and the microelectronic package 610 includes first and second seals 650, 152. In an example, a first connector, such as connector 161 or connector 171, may be partially sealed within second seal 152, wherein end 163 of first connector is coupled to a corresponding second connector (eg, connector 162) Or the end 164 of the connector 172) to provide a conductive path between the first and second support members. In this example, after the first connector is bonded to the second connector, a monolithic seal 650 can be formed such that the monolithic seal forms a face 125 that contacts the microelectronic component 120, the face 125 being facing away from the microelectronic component Support member 104 to which it is mounted. In one example, the monolithic seal 650 can form a contact with the second seal 152 such that the resulting package becomes a one-piece package with a structurally strong seal that integrates the second seal 152 with the monolithic seal 650, A monolithic seal 650 is formed on the top and side surfaces 153, 154 of the original second seal Upper and second surfaces 103, 106 of the first and second support members 102, 106. The package 610 can have an internal interface in which the monolithic seal 650 contacts and is formed on the surfaces 153, 154 of the second seal 152.

As shown in Fig. 7, in the variation of Fig. 6, the first connector can be a substantially rigid solid metal post 181 that is joined to the second connector. In an example, the second connector can be a conductive block 162, as described above.

Figure 8 is a diagram of the microelectronic package 610 of Figure 6 bonded to another component 12 to form a microelectronic assembly similar to the microelectronic assembly described above with respect to Figure 3.

Figure 9 is a further variation in which the second seal 952 is formed such that it partially seals the second connector 962 without partially sealing the first connector. In this variation, the monolithic seal 950 can form a top and side surfaces 953, 954 that contact the second seal and a face 125 that contacts the microelectronic element 120. The seal 950 can form a second surface 103, 106 that contacts the first and second support members.

Figure 10 is a variation of the microelectronic package 1010 in which, instead of a conductive block or a solder coated solid core (as seen in Figure 9), the second connector can be a substantially rigid solid metal post 982 and can be bonded to A first connector, such as a conductive block 161. In another variation of package 1010 (not shown), the first connector can be a substantially rigid solid metal post and the second connector can be a conductive block.

Figures 11-13 are stages in the method of forming the microelectronic package 610 of Figure 6. Thus, as shown in FIG. 11, the subassembly 21 including the first support member 102 can be formed with a first connector 161 (projecting above its second surface 103) and a seal 152 (around the individual first connector) 161 and insulates the first connectors from each other). In an example, the seal 152 can be a square or rectangular frame The form of the frame has a width in the direction 178 in the view shown, wherein the central opening of the frame is sized to accommodate the microelectronic element 120. The end 163 of the first connector 161 is exposed at the surface 153 of the seal 152 and may protrude above the surface 153 in a direction 180 toward the second support member 104, or may be flush with the surface 153, or may be It is recessed below the surface 153 in the direction of the surface 103 of the first support element.

In one example, subassembly 21 can be formed by forming a structure of first support member 102 and first connector 161 that protrudes above second surface 103 thereof. The first connector 161 can be a conductive block or can be other first connectors as described above in relation to other embodiments. The seal can then be molded onto the structure, for example by ejecting the encapsulant into the mold made for this purpose, while the plate of the mold abuts the end 163 of the first connector 161 such that the end 163 can remain unattached The sealant is covered or completely covered. Subsequently, deflashing can be used to further expose the ends of the molded first connector. In one example, the mold plate can include a mold slot sized to receive an end portion of the first connector 161 near its end 163 such that the sealant flows around the end portion of the first connector and produces The end 163 of the first connector of the subassembly 21 extends over the molded sealing surface 153. Similarly, the mold plate can include a protrusion at a location aligned with the first connector such that the first connector in the resulting subassembly 21 becomes recessed below the molded sealing surface 153.

Seal 152 can comprise or consist essentially of a polymeric material. Examples of materials that can be made into seals are potting compounds, epoxy resins, liquid crystal polymers, thermoplastics, and thermoset polymers. In a particular example, the seal can comprise a polymer matrix and a particulate loading material within the polymer matrix, such as by molding or depositing an uncured polymeric material having a particulate loading material therein to the first support member 102 The second surface 103 is formed on the surface. In an example, The particulate loading material can optionally have a small coefficient of thermal expansion ("CTE") such that the resulting seal 152 can have a CTE of less than 10 per million per degree Celsius, hereinafter referred to as "ppm/°C." In an example, the seal may comprise a filler material, such as a dielectric filler or semi-semiconductor filler of glass or ceramic.

As in Fig. 12, the subassembly 21 can then be moved into position for engagement with a corresponding second connector 162 that is attached to the second support element 104 of the second subassembly 22. For example, as depicted in FIG. 12, the first and second connectors can be aligned with each other, and the first and second support members can enter enough to be included in at least one of the first connector and the second connector. The joint metal flows and forms a condition of engagement between the first connector and the second connector. For example, the first connector may contact the aligned second connector before or during a time interval when the temperature of the first connector, the second connector, or both rises to a temperature at which the bonding metal can flow.

As in Figure 13, a sealant 650 can be applied to cover the joined first and second connectors 161, 162, such as by molding a sealant material (e.g., a flowable overmold material) to the first The second surface 103 of the support member 102 fills the space between the first and second support members 102, 104 and between the microelectronic member and the surface 103 of the adjacent support member 102.

In this manner, as shown in Fig. 13, an assembly or package 610 is formed, such as described further above in relation to Fig. 6.

Referring to Figure 14, in a variation of Figures 11-13, the second connector 162 can be joined to the end 163 of the first connector 161 that is exposed at the second sealed surface 153. The second connector 162 can then be coupled to a conductive element 166, such as a pad, post, or other conductive connector, at the second surface 106 of the second support member to form an assembly, such as or similar to that seen in FIG. Component. A sealant 650 can then be applied to the assembly to form what is seen in Figure 13 and as above Component 610 is further described in relation to FIG.

Although not shown in the drawings, the methods described above in relation to Figures 11-14 can be used for any type of first connector and second described in Figures 1A-B, 2, 4A-B, 5, 6, and 7. Connector, and is not limited. With respect to any or all of the microelectronic packages and components herein, the process of forming one or more seals or for forming any or all of the first connectors and/or the second connectors and terminals may be further exemplified and described below. US Application No. 11/166,982 (Tessera 3.0-358 CIP); No. 11/717,587 (Tessera 3.0-358 CIP CIP); No. 11/666,975 (Tessera 3.3-431); No. 11/318,404 ( Tessera 3.0-484); 12/838, 974 (Tessera 3.0-607); 12/839, 038 (Tessera 3.0-608); 12/832, 376 (Tessera 3.0-609) and 09/685, 799 (TIPI 3.0) -201), the disclosure of which is incorporated herein by reference.

15-17 are the stages in the method of forming the microelectronic package 910 in FIG. In this variation, the second connector 162 on the second support member 104 is partially sealed before the second connector 162 is joined to the individual first connector 161 to form the assembly as seen in FIG. Two seals 952. Thereafter, a seal 950 can be applied to form the assembly 910 as seen in FIG. 17 and as described above in relation to FIG. 9, wherein the seal 950 can contact the surfaces 953, 954 of the second seal 952 and the first and second The second surfaces 103, 106 of the support members 102, 104.

Figure 18 is a variation of Figures 15-17 in which the connector 165 can be joined to the end 164 of the second connector 162 that is exposed at the surface 953 of the second encapsulant. Connector 165 can then be bonded to conductive element 266 (eg, a pad, post, or other conductive connector) at second surface 103 of first support element 102 to form an assembly, such as or similar to that seen in FIG. Component. Encapsulant 950 can then be applied to the assembly to form assembly 910 as seen in Figure 17 and as described above in relation to Figure 9.

Figure 19 is an example assembly 1110 in which the first support member 102 includes an opening 155 that extends between its first and second surfaces 101,103. In one example, the opening can be used as a cornice through which the sealant can be provided into the interior space between the first and second support members when the assembly 1110 is fabricated.

Figure 20 is a variation of Figures 9 and 17, illustrating an assembly 1210 in which the seal 1252 includes an additional portion that covers the microelectronic element 120. In the illustrated example, encapsulant 1252 is formed as a monolithic region that partially seals second connector 162 and extends onto major surface 129 and edge surface 127 of the microelectronic component. When the microelectronic component is mounted face up on the second support member 104, the major surface 129 can be the front as described above with respect to FIG. 1A. Alternatively, when the microelectronic component faces the second support component 104, the major surface 128 can be rearward relative to the front microelectronic component 120. In this example, the seal 1250 can form a contact with the seal 1252 and can cover or contact the second surface 103 of the first support element 102.

Figures 21-22 show the processing of the variations of Figures 11-13. As shown in FIG. 21, the subassembly 321 itself may be a microelectronic package in which the microelectronic component 130 has a contact electrically coupled to its support component 302 to resemble the microelectronic component described above in relation to FIG. 1A. The manner in which the coupling between the 20 and the support member 104 is achieved. In some examples, the seal 352 can cover the edge surface 132 of the microelectronic element 130 and can cover the major surface 134 of the microelectronic element, in some examples, the support element 302 of the surface ion assembly 321 of the main surface 134.

Referring to FIG. 22, the connector 161 of the subassembly 321 can then be aligned and bonded to the corresponding connector 162 of the second subassembly 22, and the seal 650 can form a space between the microelectronic component 120 and the subassembly 321 Forming a multi-layer stacked and electrically coupled component 1310 comprising microelectronic elements 120, 130, support elements 302, 104 coupled thereto, such that microelectronic element 120, 130 is electrically coupled to each other through support members 104, 302 and first and second connectors 161, 162. Engagement element 146 (eg, a solder ball, such as described above with respect to FIG. 3) can be applied to terminal 142 of support element 104, typically after formation of seal 650.

Figure 23 is a variation thereof, similar to Figure 14, in which the processing of assembling the first and second subassemblies is carried out using a second connector 162 that has been attached to the end 163 of the first connector.

Fig. 24 is similar to the variation of Figs. 15-17, in which the assembly process can be performed in which the seal 952 partially covers the second connector 162, and wherein the first connector 16 is bonded to the surface 953 of the seal 952. The end 164 of the second connector 162 is exposed. Figure 25 illustrates the resulting assembly 1410 formed in this manner.

Figures 26-27 are another variation in which the first connector 161 and the second connector 162 in the individual sub-assemblies are partially sealed, as described above in relation to Figures 11-13 and 15-17. The method shown is discussed. However, in this example, a third connector 169 (which may be in the form of a conductive block such as described above) may be attached and electrically coupled to the end 163 of the first connector, as shown. As further shown in FIG. 27, the third connector 169 can be aligned with and coupled to the second connector 162, and the resulting assembly 1510 can then be sealed in a third seal 1550 that fills the individual The space between the third connectors 169 fills the space between the microelectronic element 120 and the support element 302. The assembly 1510 can also be formed with an engagement element 146 that is attached to the support element 104 for further attachment to a corresponding joint of the outer component, as described above.

Figures 28-30 show the processing of another variation. In this example, a partial seal on the first connector or the second connector or both may be omitted. Alternatively, as shown in FIG. 28, the dielectric reinforcement ring 156 may be present in the first connector 161, the second connector 162, or both of them. Around one. As seen in Fig. 28, the reinforcement ring 156 includes a portion 157 that covers the surface of the respective individual connector (e.g., the substantially spherical surface of the conductive block, or alternatively the wall of an adjacent post or other connector), and The reinforcing ring can form a groove 159 in which adjacent reinforcing rings meet. The reinforcing ring may be formed by flowing material onto the surface 103 of the support member 102, which material may then flow to a location on the surface 103 to which the first connector 16 is attached. For example, the dielectric reinforcing material can be dispensed as a liquid that flows to a surrounding area of an individual of the first connectors. In some examples, vacuum coating, roll coating, spray coating, dispensing or sieving treatment can be used on the liquid material to form part or all of the reinforcement ring. The dielectric reinforcing material can be adsorbed upwardly around the connector to support the outer surface of the connector while exposing its end 163 and preventing or substantially preventing when such a connector is bonded to other connectors to form the article The component or package is described as a result of the collapse of the reinforced connector. The trimming procedure can be used in some instances to remove a smaller amount of reinforcing material covering the ends 163. As further seen in FIG. 28, such reinforcing material 156 may also be present at and around the second connector 162. Alternatively, the reinforcement layer can be omitted as seen in the example of the second connector 162b. In one example, the reinforcing material can be or comprise an epoxy material, such as an underfill material having a dielectric particle loading material, such as a contact carrier surface typically dispensed to a microelectronic component (eg, a semiconductor wafer) and a wafer overlay An interface between the surfaces of the attached and electrically interconnected substrates. The stiffening ring may, in some instances, reduce the CTE of the subassembly to which it is applied.

As shown in Fig. 29, the subassemblies having the ends of the first and second connectors exposed therein can be joined together in a manner similar to that described above.

Thereafter, as shown in Fig. 30, the joined subassemblies can be mechanically reinforced with a seal 150 that fills the space between the subassemblies and further strengthens the bond between the first and second connectors. As seen in Fig. 30, the joined first and second connectors 161, 162 An increased height and an increased aspect ratio of the connection between the first and second support members can be provided in a manner similar to that described in the previous embodiments.

In a variation of Figures 28-30, the reinforcing layer may cover only the wall of the second connector or may only cover the walls of some of the second connectors. The first connector, the second connector, or both the first and second connectors may be conductive blocks or may be any type of connector discussed and illustrated above.

In a further variation, a microelectronic package (eg, package 321 shown in FIG. 21) can be used in place of the subassembly of FIG. 28 (which includes support member 102), and the seed assembly can be bonded to another microelectronic Packaged to form a component similar to the assembly shown in Figure 29.

Referring to Figures 31-36, in another variation, a first subassembly 1721 (Fig. 31) is provided that includes a support member 102 (e.g., any of the above described support members) and a connector 1732 (from the surface 103 of the support member) Extend away). The connector 1732 can be any of the foregoing connectors, such as but not limited to: a conductive block, such as a solderable bump, which can comprise tin, indium, solder, or a eutectic alloy, or alternatively a post, wire, or column A bump or a block having a solid core, or any combination of the above. As in the embodiments described above, the post can be or comprise a single piece of metal that is substantially comprised of copper. The bonding metal can be disposed on the outer surface of such a connector. Thus, in the particular example shown in FIG. 31, the connector 1732 can be a conductive block bonded to a conductive element 1730 (eg, a pad, stud bump, etc.) at its surface 103, such as a bonding metal block or solder. Piece. In this variation, prior to assembling the first subassembly and the second subassembly 1725 (Fig. 35), the first subassembly 1721 can be processed to form the modified first subassembly 1723 of Fig. 34, wherein The end 1734 of the first connector 1732 projects beyond the surface of the insulating structure 1744 (eg, a seal).

Specifically, referring to FIG. 32, the process can be performed such that the first connector 1732 The end 1734 protrudes into the temporary layer 1708 and is covered by the temporary layer. To form the insulating structure, the support member and the temporary layer can be placed on opposite inner surfaces of the respective mold plates 1712, 1710, and the curable dielectric material can flow between the cavity 1720 between the support member 102 and the temporary layer 1708. Inside. The temporary layer will cause the dielectric material to not cover the connector end 1734 during this process. Subsequently, when the mold plate is removed (Fig. 33), the end 1734 of the first connector is protected from the insulating structure such that the end 1734 protrudes beyond the surface 1744 of the insulating structure 1742.

In one example, the temporary layer 1708 (Temporary layer) can be a film that extends along the inner surface of the mold plate. In such an example, the film can be placed between the plate 1710 of the mold and the support member 102. The film can be placed on the inner surface 1711 of the mold plate 1710 as shown. The outwardly facing surface 101 of the support member 102 is disposed such that it is placed directly or indirectly on the second plate 1712 of the mold opposite the first mold plate 1710. When the mold plates 1710, 1712 are brought together, the end 1734 of the connector 1732 projects into and is covered by the film 1708. A dielectric material (eg, a sealant or molding compound, etc.) can then flow into the cavity 1720 and at least partially cure to form the insulating structure 1742 (FIG. 33), such that the connector is not covered by the dielectric material. End 1734 is protected by membrane 1708. Referring to Fig. 34, after the mold plate and temporary film 1708 are removed, the ends of the connectors of the resulting subassembly 1723 project beyond the insulating structure 1742 or the sealed surface 1744.

In the above variations, instead of using the removable film described above, the water soluble film may be placed on the inner surface of the mold plate 1710 in the position of the temporary layer 1708 prior to forming the sealing layer. When the mold plate is removed, the water soluble film can be removed by washing away the water soluble film such that the end 1734 of the connector projects beyond the surface 1744 of the insulating structure 1742 or the sealing layer, as described above.

Figure 35 is similar to assembly 1510 of Figure 27, with the first sub-assembly 1723 being used when the assembly is formed. As shown in Fig. 35, the end 1734 of the first connector 1732 is aligned with the corresponding first A second connector 169 (e.g., a conductive block of the second subassembly 1725) is such that the end 1734 is placed at the end of the connector 169. As in one or more embodiments described above, the second sub-assembly 1725 can include the microelectronic component 120 electrically coupled to the support component 104, the microelectronic component protruding from the second support component 104 of the second subassembly. Above the surface 106. As seen in Fig. 35, the end of the first connector 1732 can be disposed at a maximum height 1736 from the surface 103 of the first support member. Similarly, the end of the second connector 169 can be disposed at a maximum height 1756 from the surface 106 of the second support member 104. The second subassembly 1725 can include a third insulating structure 1752 that includes an at least partially cured third dielectric material. The third insulating structure 1752 can be a molded seal, as described above.

Next, as shown in FIG. 36, subassembly 1723 is coupled to the second subassembly in package 1740 such that the end 1734 of the connector is bonded to the corresponding connector 169. A second insulating structure or seal may then be formed, for example by flowing a second dielectric material to fill the space between and between the connectors and between the microelectronic elements 120 and the first and second support members 102 and 104 The volume between. The second insulating structure may be made of the same dielectric material as the first dielectric material or a different material. As with any or all of the embodiments shown and described, for example, see FIGS. 1-21 and 28-30, the first terminal 141 can be disposed at an outwardly facing surface of the first subassembly 1723. FIG. 36 further illustrates the engagement element 146 attached to the second terminal 142 disposed at the outwardly facing surface 105 of the second subassembly 1725 of the assembly 1740. Component 1740 can be a microelectronic package that can be adapted to be mounted to another component, such as a circuit board (not shown), through bonding element 146. In some embodiments in which terminal 141 is present, component 1740 can be used as a package-on-package (PoP) component for connecting one or more additional microelectronic package terminals to terminal 141.

In other variations (not shown), painted in Figures 11-14, 15-18 or 21-30 Any of the assembly processes shown can be practiced in situations in which one or both of the microelectronic elements or support elements described herein are replaced by different structures. In particular, one or both sub-assemblies may be or may comprise a multi-layer stacked and electrically interconnected assembly of microelectronic elements and support elements that are coupled to respective microelectronic elements at this seed component of each layer.

Referring to Figures 37-40, in yet another variation, a first insulating structure can be formed on subassembly 1761, and subassembly 1761 includes second support component 104 and microelectronic component 120 and second connector 1762, all of which are The components are all facing up, away from the surface 106 of the support member 104. A temporary layer 1768 (eg, a film) is disposed on the inner surface 1769 of the mold plate 1770. Then, as shown in Fig. 37, when the mold plates 1770, 1772 are brought onto the subassembly 1761, the ends 1764 of the connectors project into the temporary layer 1768 and are thus covered. Thereafter, the dielectric material flows into the mold cavity to form the insulating structure 1774, and then the temporary layer is removed, resulting in a subassembly 1765 as seen in FIG. This first subassembly 1765 can then be combined with the second subassembly 1767 by, for example, the process described above in relation to Fig. 15, except that the end 1764 of the connector 1762 protrudes beyond the surface 1773 of the insulating structure. Figure 40 illustrates an assembly 1780 formed by joining first and second subassemblies having external connection functions through terminals or the like, such as provided in any of the embodiments described above.

The structure discussed above provides superior 3D interconnect functionality. These features are available for any type of wafer. By way of example only, the following combinations of wafers may be included in the structure discussed above: (i) processor and memory for the processor; (ii) a plurality of memory chips of the same type; (iii) various Types of memory chips, such as DRAM and SRAM; (iv) image sensors and image processors for processing images from sensors; (v) dedicated integrated circuits (ASICs) and memory. The structures discussed above can be used in the construction of a variety of electronic systems. example For example, system 500 of FIG. 41 includes structure 506 as described above coupled to other electronic components 508 and 510. In the illustrated example, component 508 is a semiconductor wafer and component 510 is a display screen, but any other component can be used. Of course, although FIG. 41 depicts only two additional components for clarity of illustration, the system can include any number of such components. The structure 506 described above can be, for example, a microelectronic package, as provided in connection with any of the above-described embodiments, or can be a microelectronic assembly, such as discussed above with respect to FIG. 3 or FIG. Structure 506 and components 508 and 510 are mounted in a common housing 501 (shown in phantom) and are electrically interconnected as desired to form the desired circuitry. In the exemplary system shown, the system includes a circuit board 502, such as a flexible printed circuit board, and the circuit board includes a plurality of conductors 504 (only one of which is shown in FIG. 21) to interconnect the components to each other. However, this is merely exemplary; any suitable structure for making electrical connections can be used. The housing 501 is depicted as a portable housing type available, for example, in a cell phone or personal digital assistant, and the screen 510 is exposed at the surface of the housing. When structure 506 includes a photosensitive element (e.g., an imaging wafer), lens 511 or other optical means may also be provided for transmitting light to the structure. In addition, the simplified system shown in FIG. 21 is merely exemplary; other systems (including systems that are generally considered to be fixed structures, such as desktops, routers, etc.) can be fabricated using the structures discussed above.

Since these and other variations and combinations of the features discussed above can be used without departing from the scope of the invention, the description of the preferred embodiments described above should be considered as illustrative, rather than the invention as defined by the scope of the claims. The way to limit.

21‧‧‧Subcomponents

22‧‧‧Subcomponents

101‧‧‧ first surface

102‧‧‧First support element

103‧‧‧ second surface

104‧‧‧Second support element

120‧‧‧Microelectronic components

152‧‧‧Second seal

153‧‧‧ surface

161‧‧‧First connector

162‧‧‧Second connector

163‧‧‧End

Claims (20)

A microelectronic assembly comprising: first and second support members, each support member having first and second oppositely facing surfaces; a microelectronic component mounted to a support member of the first and second support members On the second surface; a conductive first connector projecting over the second surface of the first support member; and a conductive second connector projecting from the second support member And a monolithic first encapsulation forming a contact element contacting the first and second support members a second surface and forming at least one of the second surface contacting the further support element of the first and second support members; or a monolithic second seal forming the contact with the other support member a second surface, wherein for the monolithic first seal, the monolithic second seal, or both, the first package terminal at the first surface of the first support member is aligned and bonded Such second connectors The first connector is electrically coupled to the corresponding second package terminal of the first surface of the second support component, and at least one of the following is established: the first connector is connected to the second connector The device contains a conductive block. The microelectronic assembly of claim 1, wherein a gap between the second surfaces of the support members is greater than at least a second surface parallel to the first support member A pitch of the first connectors in a direction. The microelectronic component of claim 1, wherein the microelectronic component has a face facing the support component mounted thereon, and the first seal is formed to contact at least one of the following The face of the microelectronic component or a third seal formed on the face of the microelectronic component. The microelectronic assembly of claim 1, wherein the microelectronic assembly comprises the second seal, and the first seal is formed to contact the second seal. The microelectronic assembly of claim 1, wherein at least one of the first connectors or the second connectors comprises at least one of: a columnar bump or a solid substantially rigid Metal column. A stacked multi-wafer microelectronic assembly comprising the microelectronic assembly of claim 1 and a microelectronic package over the first support component of the microelectronic assembly, the microelectronic package having a terminal Connecting to the first package terminals of the microelectronic assembly. The microelectronic assembly of claim 6, wherein the second connector is a conductive metal block protruding from a pad at the second surface of the second support member, each conductive metal block being The seal surrounds and the first connectors comprise solid substantially rigid metal posts. The microelectronic assembly of claim 6, wherein the first connectors are electrically conductive a metal block that protrudes from the pad at the second surface of the first support element, and the second connectors comprise solid substantially rigid metal posts. The microelectronic assembly of claim 8 wherein each of the conductive metal blocks is surrounded by the first seal. The microelectronic assembly of claim 1, further comprising a third connector, each third connector being aligned with an end of one of the first connectors, and aligning the second connections One end of one of the devices, and engaging at least one of the aligned first and second connectors, wherein the coupled first, second, and third connectors are aligned in separate rows, And the microelectronic components are separated from each other by the first sealed material, and the first package terminals are electrically coupled to the corresponding second package terminals through the third connectors. The microelectronic assembly of claim 10, wherein the first seal separates and insulates the individual third connectors from each other. A microelectronic assembly comprising: a first microelectronic package having a first support component, a microelectronic component, and a plurality of electrically conductive first connectors, wherein the first support component has first and second opposing facing surfaces The microelectronic component is mounted to a surface of the first and second surfaces, and the plurality of electrically conductive first connections extend away from the second surface; a second microelectronic package having a second support component, a micro Electronic component and conductive second connection The second support member has first and second opposite facing surfaces, the microelectronic component being mounted to the second surface of the second support member, the conductive second connector protruding from the second support member a second surface and coupled to the ends of the first connectors; and a monolithic first seal forming the first contact element of the first and second support members a second surface and forming contact with a monolithic second seal forming the second surface of the other support element contacting the first and second support members, wherein the second support member a package terminal of the first surface is coupled to the first pair of the first connectors of the second connector, and coupled to the conductive component of the first surface of the first support component, and At least one of the above is true: the first connector and the second connector comprise conductive blocks. The microelectronic assembly of claim 12, wherein a gap height between the second surfaces of the first and second support members is greater than the parallel to the first support member a spacing of the first connectors in at least one direction of the second surface. The microelectronic assembly of claim 12, wherein the microelectronic component has a face that faces away from the support component to which it is mounted, and the first seal is formed in contact with at least one of: the microelectronic component The face or a monolithic third seal formed on the face of the microelectronic component. The microelectronic assembly of claim 12, further comprising a third connector, each third connector being aligned with an end of one of the first connectors, and aligned with the first Erlian One end of one of the connectors, and is coupled to at least one of the aligned first and second connectors, wherein the coupled first, second, and third connectors are in an individual row And the microelectronic components are separated from each other by the sealed material, and the first package terminals are electrically coupled to the conductive components of the first support component through the third connectors. The microelectronic assembly of claim 15, wherein the first seal separates and insulates the individual third connectors from each other. A method of fabricating a microelectronic assembly, comprising: joining first and second subassemblies to form a component having a first terminal at a first outwardly facing surface of the component, and a second terminal located at the component At a second outwardly facing surface, the second outwardly facing surface is opposite the first surface, wherein at least one of the subassemblies has at least one microelectronic component mounted on an inwardly facing second surface thereof, the microelectronic The component is electrically coupled to the at least one subassembly, the first subassembly includes a first support component, and the second subassembly includes a second support component, and at least one of the first or second subcomponent The included connector protrudes over the inwardly facing second surface of the support member of the individual subassembly and away from the inwardly facing second surface toward the inwardly facing second surface of the other support member, and Each of the plurality of first terminals is electrically coupled to the respective second terminal by a first connector having an end pair coupled to one end of the corresponding second connector The second connector extends over Above the first connector; and flowing a sealant into a space between the first and second support members and flowing onto the second surface of the at least one support member to form a monolithic seal, The monolithic seal will be At least portions of the first and second connectors that are not in the pair are separated from one another. The method of claim 17, wherein at least one of the following is established: the first connectors or the second connectors are limited during the bonding process to maintain one of the connectors height. The method of claim 17, wherein the package is a first seal, and one of the first or second sub-assemblies comprises a monolithic second seal, the monolithic second seal At least some of the connectors are spaced apart from each other, wherein the first sealing system is in contact with the second seal. The method of claim 17, wherein the first connector and the second connectors respectively have a maximum height above the second surfaces of the first and second support members The ends of the first connectors are aligned and directly joined to the ends of the second connectors.