WO2023185536A1 - Tube d'aspiration pour le tirage de monocristaux et four à monocristal équipé de celui-ci - Google Patents

Tube d'aspiration pour le tirage de monocristaux et four à monocristal équipé de celui-ci Download PDF

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Publication number
WO2023185536A1
WO2023185536A1 PCT/CN2023/082629 CN2023082629W WO2023185536A1 WO 2023185536 A1 WO2023185536 A1 WO 2023185536A1 CN 2023082629 W CN2023082629 W CN 2023082629W WO 2023185536 A1 WO2023185536 A1 WO 2023185536A1
Authority
WO
WIPO (PCT)
Prior art keywords
single crystal
auxiliary body
airflow
crystal according
czochralski single
Prior art date
Application number
PCT/CN2023/082629
Other languages
English (en)
Chinese (zh)
Inventor
巩名扬
张文霞
武志军
郭谦
王胜利
康学兵
周彦杰
周建辉
Original Assignee
Tcl中环新能源科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tcl中环新能源科技股份有限公司 filed Critical Tcl中环新能源科技股份有限公司
Publication of WO2023185536A1 publication Critical patent/WO2023185536A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application belongs to the technical field of single crystal manufacturing auxiliary devices, and in particular relates to a guide tube for Czochralski single crystal and a single crystal furnace equipped with the guide tube.
  • the main functions of the flow guide tube are: first, to isolate the thermal radiation of the single crystal from the heater, to ensure the temperature gradient required for single crystal growth, and to ensure a stable crystallization rate of the single crystal; second, to ensure the flow direction of the protective gas in the furnace , accelerate the gas flow rate on the liquid surface, and accelerate the removal of volatile impurities.
  • the structure of the existing flow guide tube is a bowl-shaped structure, and the lower outlet surface is a flat circular structure.
  • the structure is shown in Figure 1.
  • the inert gas flow flows out through the gap between the wafer rod and the lower end surface of the guide tube, and then takes away the oxygen atoms and volatile impurities on the solid-liquid interface and flows out; thus making the inert gas flow in the furnace
  • the flow rate through the lower opening of the guide tube is low, and the air flow area circulating on the solid-liquid surface is reduced, forming a vortex, which cannot take away too much oxygen or volatile impurities, resulting in a high oxygen content in the drawn silicon rod.
  • the crystallization rate and whole rod rate are low.
  • the problem to be solved by this application is to provide a guide tube for Czochralski single crystal and a single crystal furnace equipped with the guide tube, which solves the problem of the existing technology in which vertical grooves are provided at the lower end of the guide tube.
  • a guide tube for Czochralski single crystal includes:
  • the barrel body is equipped with an auxiliary body on the lower end surface of the barrel body, and the auxiliary body is provided close to the horizontal section side of the barrel body;
  • the auxiliary body is provided with an airflow channel.
  • the airflow channel can spread the airflow along the channel direction during the crystal pulling process, reduce the impact of the airflow on the solid-liquid interface, and reduce vortex points on the solid-liquid interface.
  • the horizontal section of the auxiliary body and the horizontal section of the barrel body have the same diameter, and the inclined wall section of the auxiliary body is in contact with part of the inclined wall section of the barrel body.
  • the airflow channel extends along the radial direction of the auxiliary body from the horizontal section side of the auxiliary body to the inclined wall section side thereof, and runs through the thickness of the auxiliary body.
  • the depth of the airflow channel gradually decreases along the airflow direction, and its cross-section is a rectangular, polygonal or arc-shaped structure with a single-sided opening.
  • the air flow channels are arranged uniformly and at intervals along the radial direction of the auxiliary body.
  • the number of air flow channels is 2-20.
  • the vertical height of the airflow channel is no greater than 20 mm.
  • a plurality of through grooves arranged along the radial direction are provided on one side of the horizontal section of the barrel body, and the through grooves are arranged corresponding to the air flow channels.
  • the number of airflow channels is no less than the number of through-slots.
  • embodiments of the present application provide a single crystal furnace, which includes the above-mentioned guide tube for Czochralski single crystal.
  • the embodiment of the present application adopts the above technical solution, adds an auxiliary body on the basis of the existing barrel body, and provides a number of airflow channels for airflow to pass through the auxiliary body, which can not only reduce the solid
  • the vortex point on the liquid interface can increase the crystal formation rate by 5%-9.7% compared with conventional methods, and reduce the oxygen content in the head by 1.1ppma-3.8ppma.
  • Figure 1 is a flow guide tube with a flat circular surface structure at the lower end in the prior art
  • Figure 2 is a flow guide tube with a through slot in the lower end horizontal section in the prior art
  • Figure 3 is a schematic structural diagram of a guide tube for Czochralski single crystal according to an embodiment of the present application
  • Figure 4 is an enlarged view of the auxiliary body in part A according to an embodiment of the present application.
  • Figure 5 is a bottom view of the auxiliary body according to an embodiment of the present application.
  • Figure 6 is a schematic structural diagram of a guide tube for Czochralski single crystal according to another embodiment of the present application.
  • This embodiment proposes a flow guide tube 100 for Czochralski single crystal, as shown in Figure 3, including a tube body 10, an auxiliary body 20 is arranged on the lower end surface of the tube body 10, and the auxiliary body 20 is close to the level of the tube body 10
  • One side of section 11 is provided; that is, an auxiliary body 20 is provided on the lower end surface of the cylinder body 10 to wrap its outer wall.
  • the purpose is to maintain the strength of the existing cylinder body 10 and ensure its cooperation with the cooling cylinder.
  • the thickness of the barrel body 10 is the thickness of the existing conventional structure as shown in FIG. 1 .
  • the auxiliary body 20 is provided with a number of airflow channels 23 arranged along its radial direction.
  • the airflow channels 23 can diffuse the airflow along the channel direction during the crystal pulling process, so that the airflow enters the solid-liquid interface and is arranged in a dispersed manner to reduce the airflow.
  • the impact force on the solid-liquid interface reduces the vortex points on the solid-liquid interface and improves the crystallization rate of the crystal.
  • the second horizontal section 21 of the auxiliary body 20 and the horizontal section 11 of the barrel body 10 have the same diameter, and the second inclined wall section 22 of the auxiliary body 20 is consistent with some of the inclined wall sections in the barrel body 10 12 contact, the structure of the auxiliary body 20 matches the structure of the lower end surface of the barrel body 10.
  • the angle between the second inclined wall section 22 and the second horizontal section 21 in the auxiliary body 20 is also 2-15°. The purpose is to increase the slope amplitude of the airflow channel 23 placed on the auxiliary body 20 to alleviate acceleration. The flow rate of the air flow entering the solid-liquid interface is too large, which affects the impact of the heat flow on the solid-liquid interface.
  • the tube body 10 at this angle makes it easier for the flow guide tube 100 to cooperate with the water-cooling jacket inside, preventing the flow guide tube 100 from being too high and contacting the solid-liquid interface.
  • the airflow channel 20 is arranged to extend along the radial direction of the auxiliary body 20 from the side of the second horizontal section 21 of the auxiliary body 20 to the side of the second inclined wall section 22. And penetrate the thickness of the auxiliary body 20 . That is to say, the air flow channel 20 is arranged to diffuse outwards along the height direction of the guide tube 100. This structure is beneficial to expanding the contact area for air flow diffusion, and can also extend the length of the air flow channel 20 to fix the air flow.
  • the depth of the airflow channel 23 gradually decreases along the airflow direction, and its cross-section is a single-sided opening.
  • the rectangular, polygonal or arc-shaped structure of the opening, that is, the air flow channel 23 is a groove body, so that the air flow can be directed along its extension direction, thereby improving its diffusion distribution effect, taking away more oxygen and making it easier to Volatile impurities.
  • the cross-sections of all airflow channels 23 can be of the same structure or can be different from each other, which are all within the protection scope of this case.
  • the airflow channels 23 are evenly and spaced along the radial direction of the auxiliary body 20 , as shown in FIG. 5 .
  • the number of air flow channels 23 is 2-20, no matter how many, but they must be evenly distributed to ensure that the air flow is evenly dispersed in all directions along the solid-liquid interface.
  • the vertical height of the airflow channel 23 is not greater than 20 mm.
  • the maximum width of the cross-section of the airflow channel 23 is not greater than 50 mm.
  • a number of through grooves 13 arranged along the radial direction are provided on one side of the horizontal section 11 of the barrel body 10, and the through grooves 13 are arranged corresponding to the air flow channels 23.
  • the side of the upper end surface of the slot 13 close to the horizontal section 11 is a curved structure to facilitate air flow.
  • the cross-sectional structure of the through slot 13 can be rectangular, polygonal or arc-shaped; the structure of the through slot 13 can be the same as or different from the structure of the airflow channel 23, and is not specifically limited here.
  • the number of airflow channels 23 is no less than the number of slots 13 .
  • the purpose is to improve the diffusion of the airflow and slow down the reverse impact force of high-temperature hot airflow at the solid-liquid interface, thereby reducing the impact on the solid-liquid interface.
  • the vortex points formed on the interface surface reduce the oxygen content at the vortex points, thereby indirectly increasing the crystallization rate of the crystal.
  • a single crystal furnace is equipped with a guide tube 100 for Czochralski single crystal as described in any one of the above.
  • this application adds an auxiliary body on the basis of the existing tube body, and sets a number of airflow channels for airflow on the auxiliary body. Not only can Reducing the vortex point on the solid-liquid interface can increase the crystal formation rate by 5%-9.7% compared with conventional methods, and reduce the oxygen content in the head by 1.1ppma-3.8ppma.
  • This application also proposes a single crystal furnace equipped with the guide tube.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un tube d'aspiration pour le tirage de monocristaux et un four à monocristal. Le tube d'aspiration pour le tirage de monocristaux comprend un corps de tube, un corps auxiliaire étant disposé sur la face d'extrémité inférieure du corps de tube, et le corps auxiliaire étant disposé à proximité d'un côté d'une section horizontale I du corps de tube ; et un passage d'écoulement de gaz est disposé sur le corps auxiliaire, et le passage d'écoulement de gaz permet à un écoulement d'air d'être diffusé dans la direction du passage pendant un processus de tirage de cristaux, ce qui permet de réduire la force d'impact du flux d'air sur une interface solide-liquide et de diminuer les points de vortex sur l'interface solide-liquide.
PCT/CN2023/082629 2022-03-31 2023-03-20 Tube d'aspiration pour le tirage de monocristaux et four à monocristal équipé de celui-ci WO2023185536A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202220731354.3U CN217298095U (zh) 2022-03-31 2022-03-31 一种直拉单晶用导流筒及设有该导流筒的单晶炉
CN202220731354.3 2022-03-31

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WO2023185536A1 true WO2023185536A1 (fr) 2023-10-05

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PCT/CN2023/082629 WO2023185536A1 (fr) 2022-03-31 2023-03-20 Tube d'aspiration pour le tirage de monocristaux et four à monocristal équipé de celui-ci

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Publication number Priority date Publication date Assignee Title
CN217298095U (zh) * 2022-03-31 2022-08-26 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用导流筒及设有该导流筒的单晶炉

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183874A (ja) * 1992-12-16 1994-07-05 Komatsu Denshi Kinzoku Kk シリコン単結晶製造装置およびシリコン単結晶の製造方法
JP2004182580A (ja) * 2002-10-07 2004-07-02 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置及びその引上げ方法
CN102011175A (zh) * 2010-11-30 2011-04-13 江苏华盛天龙光电设备股份有限公司 一种直拉式硅单晶生长炉用导流筒
CN104711666A (zh) * 2013-12-12 2015-06-17 常州市天龙光电设备有限公司 一种改进型单晶炉热屏导流筒
CN217298095U (zh) * 2022-03-31 2022-08-26 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用导流筒及设有该导流筒的单晶炉

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183874A (ja) * 1992-12-16 1994-07-05 Komatsu Denshi Kinzoku Kk シリコン単結晶製造装置およびシリコン単結晶の製造方法
JP2004182580A (ja) * 2002-10-07 2004-07-02 Sumitomo Mitsubishi Silicon Corp シリコン単結晶の引上げ装置及びその引上げ方法
CN102011175A (zh) * 2010-11-30 2011-04-13 江苏华盛天龙光电设备股份有限公司 一种直拉式硅单晶生长炉用导流筒
CN104711666A (zh) * 2013-12-12 2015-06-17 常州市天龙光电设备有限公司 一种改进型单晶炉热屏导流筒
CN217298095U (zh) * 2022-03-31 2022-08-26 内蒙古中环协鑫光伏材料有限公司 一种直拉单晶用导流筒及设有该导流筒的单晶炉

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