WO2023169673A1 - Boîtier optoélectronique et procédé de fabrication d'un boîtier optoélectronique - Google Patents

Boîtier optoélectronique et procédé de fabrication d'un boîtier optoélectronique Download PDF

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Publication number
WO2023169673A1
WO2023169673A1 PCT/EP2022/056082 EP2022056082W WO2023169673A1 WO 2023169673 A1 WO2023169673 A1 WO 2023169673A1 EP 2022056082 W EP2022056082 W EP 2022056082W WO 2023169673 A1 WO2023169673 A1 WO 2023169673A1
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WO
WIPO (PCT)
Prior art keywords
optoelectronic
optoelectronic component
surface side
molding material
layer
Prior art date
Application number
PCT/EP2022/056082
Other languages
English (en)
Inventor
Seong Tak KOAY
Adelene NG
Original Assignee
Ams-Osram International Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by Ams-Osram International Gmbh filed Critical Ams-Osram International Gmbh
Priority to PCT/EP2022/056082 priority Critical patent/WO2023169673A1/fr
Publication of WO2023169673A1 publication Critical patent/WO2023169673A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape

Definitions

  • the present invention concerns an optoelectronic package with at least one optoelectronic component configured to emit light during use of the optoelectronic component as well as a method for manufacturing at least a first and a second optoelectronic package.
  • the object of the invention is thus to counteract at least one of the aforementioned problems and to provide an improved optoelectronic package. It is a further object of the invention to provide a method for manufacturing a respective optoelectronic package.
  • Embodiments and further developments of the invention are described in the dependent claims .
  • the concept, the inventors propose, is to provide a compact optoelectronic package like the size of a flip chip device comprising one or more optoelectronic components having contact areas on opposing surface sides of the optoelectronic component.
  • the one or more optoelectronic components can in particular be of the form of an unhoused die configured to emit light of a desired wavelength when powered.
  • the optoelectronic component(s) is/are surrounded by a molding material covering at least side surfaces of the same.
  • the idea is to use a combined bottom surface of the die and the molding material to provide a first and a second contact pad, the first contact pad being connected to the upper surface side of the optoelectronic component via a conducting path and the second contact pad being connected to the bottom surface side of the optoelectronic component for powering the optoelectronic component.
  • the conducting path is thereby embedded in the molding material such that it is substantially flush with the molding material along a side surface of the optoelectronic package which results in particular from the later described manufacturing method.
  • the package sidewall can thus be utilized to create a circuit path from the upper surface side to the bottom surface side. With this a very compact optoelectronic package can be provided.
  • an optoelectronic package comprises at least a first optoelectronic component configured to emit light of a first wavelength at least through an upper surface side of the first optoelectronic component during use of the first optoelectronic component.
  • the first optoelectronic component comprises a first contact area on the upper surface side and a second contact area on a bottom surface side opposite the upper surface side.
  • the optoelectronic package further comprises a molding material laterally surrounding the first optoelectronic component, a first isolating layer covering at least a portion of the bottom surface side, a first contact pad arranged on the first isolating layer, a second contact pad arranged on the second contact area, and a first conducting path extending from the first contact area to the first contact pad along a first side surface of the optoelectronic package.
  • the first conducting path is embedded at least partially into the molding material such that the first conducting path and the molding material are substantially flush and/or form a planar surface along the first side surface.
  • the optoelectronic component may thereby be of the form of a light emitting element and in particular a light emitting diode (LED).
  • the light emitting diode may emit light of a desired wavelength when connected to a respective supply voltage.
  • the light emitting diode may generate the emitted light within an active region and emit it through the upper and bottom surface side as well as through side surfaces of the optoelectronic component.
  • Such an optoelectronic component may also be called an unhoused die configured to emit light of a desired wavelength during use of the optoelectronic component.
  • the die comprises a first contact area on the upper surface side and a second contact area on a bottom surface side opposite the upper surface side via which the die can be powered.
  • the molding material can be any molding material known in the art.
  • the molding material can for example comprise silicone and/or epoxy or may for example be a reinforced plastic.
  • the molding material can for example be at least partially be transparent to the light emitted from the optoelectronic component, but may also be light absorbing or even reflective for the light emitted from the optoelectronic component.
  • the molding material latterly surrounds the optoelectronic component such that at least side surfaces of the optoelectronic component connecting the upper surface side and the bottom surface side with each other are covered by the molding material.
  • the upper surface side may in some aspects however remain free of the molding material, to ensure that a light outcoupling of the light generated in the optoelectronic component at least through the upper surface side is not disturbed.
  • the molding material may in some aspects be substantially flush with the bottom surface side and thus the bottom surface side remains free of the molding material, to ensure that an electrical contacting of the optoelectronic component is not disturbed.
  • the isolating layer may comprise an electrically isolating material, such as for example a ceramic or a plastic, arranged in trough holes between the optoelectronic elements.
  • the isolating layer can on the one hand for example serve as an electrical isolation between the bottom surface side of the optoelectronic component and between the first contact pad and on the other hand provide a good heat dissipation path from the optoelectronic component to the first contact pad.
  • isolating layer can for example serve as a reflective and/or light absorbing medium arranged on at least a portion of the bottom surface side to absorb or reflect light which would without the isolating layer emerge through the contacting portion of the bottom surface.
  • the first conducting path extending from the first contact area to the first contact pad along a first side surface of the optoelectronic package is in particular embedded at least partially into the molding material such that the first conducting path and the molding material are substantially flush and/or form a planar surface along the first side surface.
  • the first conducting path and the molding material thus together form an even surface.
  • the first conducting path extending from the first contact area to the first contact pad along a first side surface of the optoelectronic package is however embedded into the molding material such that the first conducting path is partially embedded into the molding material and partially protrudes the molding material.
  • the first side surface is formed at least by the molding material, the first conducting path and optionally the first isolating layer. In some aspects, the first side surface is formed by the molding material, the first conducting path and optionally the first isolating layer only.
  • a bottom surface side of the first contact pad opposite the isolating layer and a bottom surface side of the second contact pad opposite the second contact area are arranged in a same plane.
  • the bottom surface side of the first and second contact pad may thus be flush with each other. It is thus easier to place the optoelectronic package on a desired target substrate.
  • the existing second contact area of the optoelectronic component can by the second contact pad in particular be extended to the level of the first isolating layer and the first contact pad on the first isolating layer to have an even contacting surface of the optoelectronic package.
  • the contact pads can thereby be generated using for example a copper plating process.
  • the optoelectronic package further comprises a second, third, or more optoelectronic components each configured to emit light of a second, third or other wavelength at least through an upper surface side of the respective optoelectronic component during use.
  • the optoelectronic component(s) each comprise a first contact area on the upper surface side of the optoelectronic component and a second contact area on a bottom surface side of the optoelectronic component opposite the upper surface side of the optoelectronic component.
  • the optoelectronic component(s) are arranged distant to the first optoelectronic component and to each other and are each laterally surrounded by the filling material.
  • the optoelectronic components may for example emit light of the same wavelength, light of slightly different wavelengths, or light of different wavelengths. Light of different wavelengths may thereby originate from different material systems used for the optoelectronic components, different bandgaps in the respective active region of the optoelectronic components or due to a light converter material arranged on at least some of the optoelectronic components.
  • the second contact pad is arranged on the second contact areas of the first optoelectronic component, the second optoelectronic component and further optoelectronic components if present thus electrically connecting the second contact areas.
  • the second contact pad is arranged on the second contact areas of all optoelectronic components present in the optoelectronic package, however it may also be that a first second contact pad is arranged on a first number of second contact areas of a first number of optoelectronic components and a second contact pad is arranged on a second number of contact areas of a second number of optoelectronic components etc..
  • the optoelectronic package further comprises a second isolating layer covering at least a portion of the bottom surface side of the second optoelectronic component, a third contact pad arranged on the second isolating layer, and a second conducting path extending from the first contact area of the second optoelectronic component to the third contact pad along a second side surface of the optoelectronic package.
  • the second conducting path is thereby embedded at least partially into the molding material such that the second conducting path and the molding material are substantially flush and/or form a planar surface along the second side surface.
  • the optoelectronic package can comprise the same number of further isolating layers, further contact pads and further conducting paths each arranged and connected to each other and the further optoelectronic component in the same way as described for the first and second optoelectronic component.
  • the upper surface side of the first optoelectronic component, the upper surface side of the second optoelectronic component, and the upper surface side(s) of further optoelectronic component(s), if present, are arranged in a same plane.
  • the optoelectronic package may thus comprise an substantially planar/even upper surface side.
  • the molding material is substantially flush with the second contact pad along at least one further side surface of the optoelectronic package and/or forms an substantially planar/even surface with the second contact pad along the at least one further side surface.
  • first and the second optoelectronic component each being configured to emit light at least through an upper surface side of the optoelectronic component during use of the optoelectronic component, and the first and second optoelectronic component each comprising a first contact area on the upper surface side and a second contact area on a bottom surface side opposite the upper surface side;
  • first structured electrically conductive material layer with at least a first region arranged on at least the second contact areas of the first and second optoelectronic component (forming a later second contact pad) and a second region, electrically isolated from the first region and the first and second optoelectronic component, arranged on the structured isolating layer (forming a later first contact pad) and extending into the opening (forming a fist portion of a later conducting path);
  • the step of providing structured isolating layer comprises a spray coating of for example a ceramic material to create isolation pads on the bottom surface sides of the optoelectronic components.
  • the first and second optoelectronic component are arranged on a first temporary carrier layer with each the bottom surface side facing the first temporary carrier layer.
  • the first temporary carrier layer can therefore comprise a sticky surface, by which the first and second optoelectronic component are temporary attached/fixed to the first temporary carrier layer.
  • the method further comprises a step of removing the first temporary carrier layer and providing a second temporary carrier layer facing the upper surface side of the first and second optoelectronic component.
  • the step of removing the first temporary carrier layer and providing the second temporary carrier layer may be carried out after the step of laterally surrounding the optoelectronic components and in particular after the molding material has been cured.
  • the step of providing the structured isolating layer takes place after the step of removing the first temporary carrier layer and providing the second temporary carrier layer.
  • the structured isolating layer can in particular be provided on the surface, which was in contact with the first temporary carrier layer before its removal.
  • the structured isolating layer is in particular be provided on the bottom surface side of the first and the second optoelectronic component such that at least a first portion of each bottom surface side of the first and the second optoelectronic component is covered by the structured isolating layer.
  • the structured isolating layer can thereby also extend onto the moldig material and cover portions of the molding material as well. However, a second portion of each bottom surface side of the first and the second optoelectronic component remains free from the structured isolating layer. Onto this second portions first regions of the first structured electrically conductive material layer may in a later step be provided.
  • the method further comprises a step of removing the second temporary carrier layer and providing a third temporary carrier layer facing the first structured electrically conductive material layer.
  • the step of removing the second temporary carrier layer and providing a third temporary carrier layer may thus be performed after the step of providing the first structured electrically conductive material layer.
  • the step of providing the second structured electrically conductive material layer takes place after the step of removing the second temporary carrier layer and providing the third temporary carrier layer.
  • the second structured electrically conductive material layer can in particular be provided on the surface, which was in contact with the second temporary carrier layer before its removal.
  • the step of separating the first and the second optoelectronic package comprises a step of removal of the third temporary carrier layer, in particular after a step of separating the first and the second optoelectronic package by sawing a gap in-between them.
  • the step of separating the first and the second optoelectronic package comprises a step of sawing through the first and second structured electrically conductive material layer, the molding material and optionally through the structured isolating layer along the opening.
  • the step of sawing causes a planar side surface of the first and second optoelectronic package comprising portions of the first and second structured electrically conductive material layer, portions of the molding material and optionally portions of the structured isolating layer.
  • the method further comprises a step of providing a structured dielectric layer between the second structured electrically conductive material layer and the molding material and/or the first and second optoelectronic component, in particular to prevent a short within the optoelectronic packages.
  • the optoelectronic packages and the method for manufacturing an optoelectronic package can be applicable to single chip or multi-chip device packages.
  • Various layouts (size/shape/arrangements) of the optoelectronic components and the molding material, as well as various anode/cathode contact pads combinations (common cathode, common anode, individual pads, etc) are conceivable and can be chosen with regard to the desired use of the optoelectronic package.
  • the described optoelectronic package as well as the described method for manufacturing an optoelectronic package and in particular a first and a second optoelectronic packages can provide at least one of the following advantageous:
  • FIG. 1A to ID different views of an optoelectronic package according to some aspects of the invention
  • FIG. 2A to 2H different views of further embodiments of an optoelectronic package according to some aspects of the invention.
  • Fig. 3A to 3J steps of a method for manufacturing at least a first and a second optoelectronic package according to some aspects of the invention.
  • Figs. 1A to ID show different views of an optoelectronic package 1 according to some aspects of the invention.
  • Figure 1A shows an isometric view
  • Fig. IB a side view
  • Fig. 10 a top view
  • Fig. ID a bottom view.
  • the optoelectronic package 1 comprises an optoelectronic component 2 surrounded by a molding material 3 such that side surfaces of the optoelectronic component 2 are covered by the molding material 3, but an upper surface side U2 and a bottom surface side B2 remain free of the molding material 3.
  • the molding material 3 is thus forming a ring around the optoelectronic component 2.
  • the optoelectronic component 2 is configured to emit light of a first wavelength at least through the upper surface side U 2 during use of the optoelectronic component 2 and comprises a first contact area Cl 2 on the upper surface side U2 and a second contact area C22 on the bottom surface side B2 via which the optoelectronic component 2 can be powered.
  • a portion and in the exemplary embodiment half of the bottom surface side B2 is covered by a first isolating layer 4 providing an electrical isolation of half of the second contact area C22 on the bottom surface side B 2 .
  • a first contact pad 5a is arranged 4a and electrically isolated from the second contact area C2 2 while on the second contact area 022, a second contact pad 5b is arranged being electrically connected to the second contact area 022.
  • These two contact pads 5a, 5b serve as electrical contact surfaces to provide electric power to the optoelectronic package 1.
  • the optoelectronic package 1 further comprises a first conducting path 6 extending from the first contact area Cl 2 to the first contact pad 5a along a first side surface Sa of the optoelectronic package 1.
  • the first conducting path 6 is thereby embedded into the molding material 3 such that the first conducting path 6 and the molding material 3 are substantially flush and form a planar surface along the first side surface Sa.
  • This planar/flush side surface Sa results in particular due to the manufacturing method described in the following as several optoelectronic packages 1 are separated along the side surface Sa.
  • the first conducting path 6 is in form of a conductive track of a conductive material electrically contacting the first contact area CI2, extending from the first contact area Cl 2 along the side surface Sa of the optoelectronic package, and electrically contacting the first contact pad 5a.
  • the molding material 3 is flush with the bottom surface side B 2 together forming a bottom surface side of the optoelectronic package 1.
  • Half of the bottom surface side of the optoelectronic package 1 is thereby covered with the first isolating layer 4 and the other half is covered by the second contact pad 5b.
  • the first contact pad 5a again covers only a portion of the first isolating layer 4 and in particular is arranged on the first isolating layer 4 distant to the second contact pad 5b so that the two contact pads are electrically isolated from each other.
  • Bottom surfaces of the first and the second contact pad opposite the optoelectronic component 2 are arranged in the same plane, so that the optoelectronic package can be placed onto a target substrate without being tilted.
  • the molding material 3 and the second contact pad 5b are in addition substantially flush along a further side surface Sc of the optoelectronic package 1. This again results in particular due to the manufacturing method described in the following as several optoelectronic packages 1 are separated along the further side surface Sc as well.
  • Figures 2A to 2H show different views of further embodiments of an optoelectronic package 1.
  • Figure 2A shows a side view, Fig. 2B, 2D and 2F a top view and Fig. 2C, 2E, 2G and 2H a bottom view.
  • the optoelectronic package 1 comprises not only one but four optoelectronic components 2a, 2b, 2c, 2d arranged in a 2 x 2 matrix distant from each other. The number four is however only exemplarily and any number of optoelectronic components may be possible depending on the desired use.
  • the optoelectronic components 2a, 2b, 2c, 2d are surrounded by molding material 3 such that side surfaces of the optoelectronic components 2a, 2b, 2c, 2d are covered by the molding material 3, but upper surface sides U 2a , U 2b , U 2c , U 2d and bottom surface sides B 2a , B 2b , B 2c , B 2d remain free of the molding material 3.
  • the molding material 3 is thus forming a grid around and between the optoelectronic components 2a, 2b, 2c, 2d.
  • the optoelectronic components 2a, 2b, 2c, 2d are each configured to emit light of the same wavelength or of different wavelengths at least through the upper surface sides U 2a , U 2b , U 2c , U 2d during use of the optoelectronic components.
  • the optoelectronic components 2a, 2b, 2c, 2d comprise a first contact area C1 2a , C1 2b , C1 2c , C1 2d on the upper surface sides and a second contact area C2 2a , C2 2b , C2 2c , C2 2d on the bottom surface sides via which the optoelectronic components can be powered.
  • the molding material 3 is flush with the bottom surface sides B 2a , B 2b , B 2c , B 2d together forming a bottom surface side of the optoelectronic package 1.
  • two strips of the bottom surface side of the optoelectronic package 1 along side surfaces Sa and Sb of the optoelectronic packages 1 are covered with a first isolating layer 4a and a second isolating layer 4b.
  • a middle strip between the two side strips is covered by the second contact pad 5b.
  • a first contact pad 5a, a third contact pad 5c, a fourth contact pad 5d, and a fifth contact pad 5e are arranged on the first or second isolating layer 4a, 4b covering each a portion of the first and second isolating layer 4a, 4b and are in particular arranged on the first and second isolating layer 4a, 4b distant to the second contact pad 5b and distant to each other so that they are all electrically isolated from each other.
  • Bottom surfaces of the contact pads opposite the optoelectronic components are arranged in the same plane, so that the optoelectronic package can be placed onto a target substrate without being tilted.
  • a first conducting path 6a extends from the first contact area C1 2a to the first contact pad 5a along first side surface Sa of the optoelectronic package 1.
  • the first conducting path 6 is thereby embedded into the molding material 3 such that the first conducting path 6a and the molding material 3 are substantially flush and form a planar surface along the first side surface Sa.
  • a second conducting path 6b extends from the first contact area C12b to the third contact pad 5c along second side surface Sb of the optoelectronic package 1, which is opposite the first side surface Sa.
  • the second conducting path 6b is thereby embedded into the molding material 3 such that the second conducting path 6b and the molding material 3 are substantially flush and form a planar surface along the second side surface Sb.
  • a third conducting path 6c extends from the first contact area C12c to the fourth contact pad 5d again along first side surface Sa of the optoelectronic package 1.
  • the third conducting path 6c is thereby embedded into the molding material 3 such that the third conducting path 6c and the molding material 3 are substantially flush and together with the first conducting path 6a form a planar surface along the first side surface Sa.
  • a fourth conducting path 6d extends from the first contact area C12d to the fifth contact pad 5e along second side surface Sb of the optoelectronic package 1.
  • the fourth conducting path 6d is thereby embedded into the molding material 3 such that the fourth conducting path 6d and the molding material 3 are substantially flush and together with the second conducting path 6b form a planar surface along the second side surface Sb.
  • the molding material 3 and the second contact pad 5b are in addition substantially flush along a further side surface Sc of the optoelectronic package 1.
  • the dimensions of the conducting paths 6a, 6b, 6c, 6d can thereby be varied and the can on the one hand be thicker and on the other hand be wider so that they at least approximately cover the whole first and second side surface with just a small spacing inbetween to electrically isolate them from each other.
  • the conducting paths 6a, 6b, 6c, 6d can also be arranged each on one of the four side surfaces of the optoelectronic package 1.
  • the bottom surface side of the optoelectronic package 1 is covered with a first isolating layer 4 leaving openings for a second, a third, a fourth and a fifth contact pad 5b, 5c, 5d, 5e.
  • the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e are each arranged on and connected to a second contact area C2 2a , C2 2 b, C2 2c , C2 2 d on the bottom surface sides of the optoelectronic components.
  • a first contact pad 5a is arranged on the first isolating layer 4 covering a portion of the first isolating layer 4 and is in particular arranged on the first isolating layer 4 distant to the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e, in particular between the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e, electrically isolated from them.
  • Bottom surfaces of the contact pads opposite the optoelectronic components are arranged in the same plane, so that the optoelectronic package can be placed onto a target substrate without being tilted.
  • a first conducting path 6a extends from the first contact area Cl 2a to the first contact pad 5a along first side surface Sa of the optoelectronic package 1.
  • the first conducting path 6a is thereby embedded into the molding material 3 such that the first conducting path 6a and the molding material 3 are substantially flush and form a planar surface along the first side surface Sa.
  • a second, third and fourth conducting path 6b, 6c, 6d extends from the first contact areas Cl 2b , Cl 2 c, Cl 2d to the first contact pad 5a each along another side surface of the optoelectronic package 1.
  • the conducting paths 6b, 6c, 6d are thereby embedded into the molding material 3 such that the conducting paths and the molding material 3 are substantially flush and form a planar surface along the side surfaces.
  • Figures 2F and 2G show a further embodiment in which the bottom surface side of the optoelectronic package 1 is again covered with a first isolating layer 4 leaving openings for a second, a third, a fourth and a fifth contact pad 5b, 5c, 5d, 5e.
  • the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e are each arranged on and connected to a second contact area C2 2a , C2 2 b, C2 2c , C2 2 d on the bottom surface sides of the optoelectronic components.
  • the first contact pad 5a is however arranged on the first isolating layer 4 in the form of a strip covering a centre portion of the first isolating layer 4 and is in particular arranged on the first isolating layer 4 distant to the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e, in particular between the second, third, fourth and fifth contact pad 5b, 5c, 5d, 5e, electrically isolated from them.
  • Bottom surfaces of the contact pads opposite the optoelectronic components are arranged in the same plane, so that the optoelectronic package can be placed onto a target substrate without being tilted.
  • a first, second, third and fourth conducting path 6a, 6b, 6c, 6d extends from the first contact areas C12a, C12b, C12c, C12d to the first contact pad 5a along two opposing side surfaces of the optoelectronic package 1.
  • the conducting paths 6a, 6b, 6c, 6d are thereby embedded into the molding material 3 such that the conducting paths and the molding material 3 are substantially flush and form a planar surface along the side surfaces.
  • Fig. 2H shows a further embodiment in which the bottom surface side of the optoelectronic package 1 is again covered with a first isolating layer 4 leaving an opening for a second contact pad 5b in the middle of the bottom surface side of the optoelectronic package 1.
  • the second contact pad 5b is arranged on and connected to second contact areas C2 2a , C2 2 b, C2 2c , C2 2 d on the bottom surface sides of the optoelectronic components.
  • the first contact pad 5a is arranged on the first isolating layer 4 in the form of a frame covering an edge portion of the first isolating layer 4 and is in particular arranged on the first isolating layer 4 distant to the second contact pad 5b in particular surrounding the second contact pad 5b electrically isolated from it. Bottom surfaces of the contact pads opposite the optoelectronic components are arranged in the same plane, so that the optoelectronic package can be placed onto a target substrate without being tilted.
  • a first, second, third and fourth conducting path 6a, 6b, 6c, 6d extends from the first contact areas C12a, C12b, C12c, C12d to the first contact pad 5a along different or two oposing side surfaces of the optoelectronic package 1.
  • the conducting paths 6a, 6b, 6c, 6d are thereby embedded into the molding material 3 such that the conducting paths and the molding material 3 are substantially flush and form a planar surface along the side surfaces.
  • Figures 3A to 3J show steps of a method for manufacturing at least a first and a second optoelectronic package la, lb.
  • optoelectronic components 2a, 2b are therefore provided on a first temporary carrier layer 10a.
  • first temporary carrier layer 10a In the embodiment shown exemplarily eight optoelectronic components are provided on the first temporary carrier layer 10a, however indicated by the half optoelectronic component on the left side of the drawing, it can also be more optoelectronic components.
  • two optoelectronic components 2a, 2b may form a later optoelectronic package.
  • the number of optoelectronic components forming a package may however differ and can for example also increase with a higher number of optoelectronic components arranged in the direction into the drawing plane.
  • the optoelectronic components 2a, 2b are each configured to emit light at least through an upper surface side U 2a , U 2 b of the optoelectronic components during use.
  • first optoelectronic components 2a may be configured to emit light of a different wavelength than second optoelectronic components 2b.
  • the optoelectronic components 2a, 2b each comprise a first contact area Cl 2a , Cl 2 b on the upper surface side U 2a , U 2 b and a second contact area C2 2a , C2 2 b on a bottom surface side B 2a , B 2 b opposite the upper surface side U 2a , U 2 b.
  • the optoelectronic components 2a, 2b are arranged on the first temporary carrier layer 10a with each the bottom surface side B 2a , B 2 b facing the first temporary carrier layer 10a.
  • the first temporary carrier layer 10a can therefore comprise a sticky surface, by which the optoelectronic components 2a, 2b are temporary attached/fixed to the first temporary carrier layer 10a.
  • the optoelectronic components 2a, 2b are laterally surrounded with a molding material 3.
  • This step can comprise for example a film assisted molding process using a material like silicone and/or epoxy.
  • the optoelectronic components 2a, 2b are surrounded with the molding material 3 in such a way that side surfaces of the optoelectronic components 2a, 2b are covered by the molding material but upper surface sides U2a, thb and bottom surface sides B2a, B 2b of the optoelectronic components remain free of the molding material 3.
  • the bottom surface sides B2a, B2b can in particular remain free as they are in contact with the first temporary carrier layer 10a during the molding process whereas the upper surface sides U 2a , U 2 b can remain free by adjusting the amount of molding material that is used.
  • the first temporary carrier layer 10a is removed and a second temporary carrier layer 10b facing the upper surface sides U2a, tkb of the optoelectronic components 2a, 2b is provided.
  • This step can for example correspond to a first re-lamination step.
  • the step of removing the first temporary carrier layer and providing the second temporary carrier layer may in particular be carried out after the molding material 3 has been cured.
  • a structured isolating layer 4 is provided on the bottom surface sides B2a, B2b of the optoelectronic components 2a, 2b.
  • the structured isolating layer 4 is arranged on the bottom surface sides B2a, B2b such that at least a first portion of each the bottom surface sides B2a, B2b of the optoelectronic components is covered by a portion of the structured isolating layer 4. However, a second portion of each bottom surface sides B 2a , B 2 b of the optoelectronic components remain free from the structured isolating layer 4.
  • the structured isolating layer 4 and in particular the portions of the structured isolating layer 4 can thereby also extend onto the moldig material 3 and cover portions of the molding material 3 as well.
  • the step of providing the structured isolating layer 4 can for example comprise a spray coating of for example a ceramic material to create isolation pads on the bottom surface sides B 2a , B 2 b of the optoelectronic components.
  • openings 7 are created between first and second optoelectronic components 2a, 2b and in particular between first and second optoelectronic components 2a, 2b of later different optoelectronic packages.
  • the openings 7 extend through the molding material 3, and in case of the structured isolating layer 4 extending into regions of the openings 7 also through the structured isolating layer 4.
  • the creation of the openings 7 is thereby a first preparation step of separating units which will later form individual optoelectronic packages.
  • the openings can be generated by for example sawing, etching or removal through laser light.
  • a first structured electrically conductive material layer 8 is provided onto the upper surface side U2a, U2b as well as into the openings 7.
  • the first structured electrically conductive material layer 8 comprises first regions 8a arranged on the second contact areas C22a, C22b of the optoelectronic components (forming later second contact pads) and second regions 8b, electrically isolated from the first regions 8a and the optoelectronic components 2a, 2b, on the structured isolating layer 4 (forming later first contact pads) and extending into the openings 7 (forming fist portions of later conducting paths).
  • the step of providing the first structured electrically conductive material layer 8 may for example comprise a copper (Cu) plating and patterning (Photoresist, Lithography, Development).
  • a seventh step as shown in Fig. 3G, the second temporary carrier layer 10b is removed and a third temporary carrier 10c layer facing the first structured electrically conductive material layer 8 is provided.
  • This step can for example correspond to a second re-lamination step.
  • a structured dielectric layer 11 is provided on the molding material 3 in areas adjacent to the first contact areas C12a, C12b-
  • the structured dielectric layer 11 can in the later optoelectronic packages serve as an electrical isolation between the optoelectronic components and the first contact pad and/or the conducting paths.
  • the structured dielectric layer 11 can serve as a levelling of the area on which in a later step a second structured electrically conductive material layer is provided.
  • a second structured electrically conductive material layer 9 is provided on the first contact areas C12a, C12b, on the openings 7, as well as on intermediate areas between the first contact areas C12a, C12b and the openings 7.
  • the second structured electrically conductive material layer 9 comprises areas each electrically connecting the first contact areas C12a, C12b and the second regions 8b of the first structured electrically conductive material layer 8 (forming second portions of later conducting paths).
  • optoelectronic packages la, lb are separated and the third temporary carrier layer 10c is removed.
  • the optoelectronic packages la, lb are separated along the openings by for example a step of sawing through the first and second structured electrically conductive material layer 8, 9, the molding material 3 and in case of the structured isolating layer 4 extending into regions adjacent to the openings 7 also through the structured isolating layer 4.
  • the side surfaces of the optoelectronic packages therefore comprise portions of the first and second structured electrically conductive material layer, portions of the molding material and optionally portions of the structured isolating layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un boîtier optoélectronique comprenant au moins un premier composant optoélectronique configuré pour émettre de la lumière d'une première longueur d'onde au moins à travers un côté de surface supérieure du premier composant optoélectronique pendant l'utilisation de celui-ci, le premier composant optoélectronique comprenant une première zone de contact sur le côté de surface supérieure et une seconde zone de contact sur un côté de surface inférieure opposé au côté de surface supérieure. Le boîtier optoélectronique comprend en outre un matériau de moulage entourant latéralement le premier composant optoélectronique, une première couche isolante recouvrant au moins une partie du côté de surface inférieure, un premier plot de contact disposé sur la première couche isolante, un second plot de contact disposé sur la seconde zone de contact, et un premier trajet conducteur s'étendant de la première zone de contact au premier plot de contact le long d'une première surface latérale du boîtier optoélectronique. Le premier trajet conducteur est ainsi intégré au moins partiellement dans le matériau de moulage de sorte que le premier trajet conducteur et le matériau de moulage sont sensiblement à fleur et/ou forment une surface plane le long de la première surface latérale.
PCT/EP2022/056082 2022-03-09 2022-03-09 Boîtier optoélectronique et procédé de fabrication d'un boîtier optoélectronique WO2023169673A1 (fr)

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081319A1 (fr) * 2004-02-20 2005-09-01 Osram Opto Semiconductors Gmbh Element optoelectronique, dispositif pourvu d'une pluralite d'elements optoelectroniques et procede pour realiser un element optoelectronique
WO2009092362A1 (fr) * 2008-01-22 2009-07-30 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de production d'un composant optoélectronique et d'une plaquette
WO2011015449A1 (fr) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant semiconducteur optoélectronique et composant semiconducteur optoélectronique
EP2360750A1 (fr) * 2010-02-24 2011-08-24 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
WO2015074824A1 (fr) * 2013-11-21 2015-05-28 Osram Opto Semiconductors Gmbh Procédé permettant de produire des composants optoélectroniques à semi-conducteur et composant optoélectronique à semi-conducteur
WO2016198502A1 (fr) * 2015-06-11 2016-12-15 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de fabrication associé
WO2020212252A1 (fr) * 2019-04-17 2020-10-22 Osram Opto Semiconductors Gmbh Composant semiconducteur optoélectronique
US20210320226A1 (en) * 2018-08-28 2021-10-14 Sony Semiconductor Solutions Corporation Light-emitting element and electronic apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005081319A1 (fr) * 2004-02-20 2005-09-01 Osram Opto Semiconductors Gmbh Element optoelectronique, dispositif pourvu d'une pluralite d'elements optoelectroniques et procede pour realiser un element optoelectronique
WO2009092362A1 (fr) * 2008-01-22 2009-07-30 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de production d'un composant optoélectronique et d'une plaquette
WO2011015449A1 (fr) * 2009-08-07 2011-02-10 Osram Opto Semiconductors Gmbh Procédé de fabrication d'un composant semiconducteur optoélectronique et composant semiconducteur optoélectronique
EP2360750A1 (fr) * 2010-02-24 2011-08-24 Kabushiki Kaisha Toshiba Dispositif électroluminescent semi-conducteur et son procédé de fabrication
WO2015074824A1 (fr) * 2013-11-21 2015-05-28 Osram Opto Semiconductors Gmbh Procédé permettant de produire des composants optoélectroniques à semi-conducteur et composant optoélectronique à semi-conducteur
WO2016198502A1 (fr) * 2015-06-11 2016-12-15 Osram Opto Semiconductors Gmbh Composant optoélectronique et procédé de fabrication associé
US20210320226A1 (en) * 2018-08-28 2021-10-14 Sony Semiconductor Solutions Corporation Light-emitting element and electronic apparatus
WO2020212252A1 (fr) * 2019-04-17 2020-10-22 Osram Opto Semiconductors Gmbh Composant semiconducteur optoélectronique

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