WO2023165078A1 - 一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件 - Google Patents

一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件 Download PDF

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WO2023165078A1
WO2023165078A1 PCT/CN2022/109312 CN2022109312W WO2023165078A1 WO 2023165078 A1 WO2023165078 A1 WO 2023165078A1 CN 2022109312 W CN2022109312 W CN 2022109312W WO 2023165078 A1 WO2023165078 A1 WO 2023165078A1
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fluorescent material
thermally activated
activated delayed
delayed fluorescent
phenazine
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French (fr)
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李艳青
曾馨逸
周经雄
唐建新
唐艳青
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苏州大学
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/12—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains three hetero rings
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
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    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1074—Heterocyclic compounds characterised by ligands containing more than three nitrogen atoms as heteroatoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs

Definitions

  • the present invention relates to the field of organic electroluminescence materials, in particular to an industrializable and high-performance 11-(9,9-dimethylacridin-10(9H)-yl)bipyridine[3,2-a: 2',3'-c]phenazine (DPPZ-DMAC) and 11,12-bis(9,9-dimethylacridin-10(9H)-yl)bipyridine[3,2-a:2' , 3'-c] phenazine (DPPZ-2DMAC) red thermally activated delayed fluorescent material electroluminescent device and its preparation method.
  • DPPZ-DMAC 11-(9,9-dimethylacridin-10(9H)-yl)bipyridine[3,2-a: 2',3'-c]phenazine
  • DPPZ-2DMAC red thermally activated delayed fluorescent material electroluminescent device and its preparation method.
  • Electroluminescence also known as electric field luminescence, or EL for short, is an electric field generated by the voltage applied to the two electrodes, and the electrons excited by the electric field hit the luminescent center, causing electrons to transition, change, and recombine between energy levels.
  • a physical phenomenon that causes luminescence It is generally believed that under the action of a strong electric field, the energy of the electrons increases correspondingly until it far exceeds the energy of the electrons in the thermal equilibrium state and becomes a superheated electron. The superheated electrons can ionize the crystal lattice through collisions during the movement to form electrons, space When these ionized electrons and hole pairs recombine or the excited luminescent center returns to the ground state, it emits light. From the principle of luminescence, electroluminescence can be divided into high-field electroluminescence and low-field electroluminescence. High-field electroluminescence is an in vivo luminescence effect.
  • OLEDs organic light-emitting devices
  • the first-generation light-emitting device OLED based on conventional fluorescent materials shows an internal quantum efficiency (IQE) as high as 25%.
  • IQE internal quantum efficiency
  • Phosphorescent materials can utilize singlet and triplet excitons through a strong spin-orbit coupling effect with the help of heavy metals, and increase the IQE. to 100%.
  • phosphorescent materials have shown high efficiency and have been successfully used in commercial OLED products, there is a disadvantage in terms of cost.
  • thermally activated delayed fluorescence (TADF) materials Compared with phosphorescent complexes, thermally activated delayed fluorescence (TADF) materials have significant resource advantages and lower costs due to the absence of noble metal systems. TADF materials can also achieve 100% IQE by converting triplet excitons from the lowest triplet excited state (T 1 ) to the singlet excited state (S 1 ) through antisystemic crossing into photons, which can be compared with phosphorescence. devices are comparable. Thus, in the past few years, great attention has been drawn in the field of organic electroluminescence.
  • the luminescent material is a semiconductor compound, doped with appropriate impurities to introduce luminescent centers or form a certain dielectric state. When it is in contact with an electrode or other medium, and its potential barrier is reversed, electrons from the electrode or interface state enter the high field region of the luminescent material, are accelerated and become overheated electrons.
  • Orange-red TADF emitters have attracted a great deal of interest in recent years.
  • existing TADF materials are usually accompanied by strong non-radiative processes, small ⁇ PL values and serious concentration quenching effects. Therefore, it is difficult to achieve good external quantum efficiency (EQE) using existing TADF materials.
  • the invention discloses an electroluminescent device based on a bispyrido[3,2-a2',3'-c]phenazine receptor heat-activated delay material and a preparation method thereof. It is used to solve the serious concentration quenching effect of the existing red TADF materials, and at the same time solve the problem that the existing orange-red/red TADF materials have many preparation steps, expensive raw materials, complex synthesis and purification processes, low yield, and difficult to be large-scale.
  • the problem of mass production in particular, the thermal activation delay of the bispyrido[3,2-a2',3'-c]phenazine acceptor, the OLED prepared by doping the light-emitting layer with the red light material, realizes its EQE exceeding 25 %The goal.
  • the present invention adopts the following technical scheme: a red photoluminescence device based on bispyridine phenazine thermally activated delayed fluorescent material, the light-emitting layer of the red photoluminescent device is doped with bispyridine phenazine thermally activated delayed fluorescent material as the host material preparation.
  • a red photoluminescent device light emitting layer based on bispyridine phenazine thermally activated delayed fluorescent material is prepared by bispyridine phenazine thermally activated delayed fluorescent material doped host material.
  • the red photoluminescent device based on bispyridine phenazine thermally activated delayed fluorescent material of the present invention comprises an anode, a hole injection layer, a hole transport layer, a blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode
  • Its preparation method is a conventional technique; such as sequentially preparing a hole injection layer, a hole transport layer, a blocking layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode on the anode to obtain the thermally activated delayed fluorescence based on bispyridylphenazine. materials for red photoluminescent devices.
  • the inventiveness of the present invention lies in that the light-emitting layer of the red photoluminescent device is prepared by doping the main material with bispyridylphenazine thermally activated delayed fluorescent material, and the rest of the materials are conventional materials of electroluminescent devices, and the specific preparation methods of each layer are conventional techniques. Such as vacuum evaporation.
  • the bispyridylphenazine thermally activated delayed fluorescent material is DPPZ-DMAC or DPPZ-2DMAC.
  • the doping concentration of the bispyridylphenazine thermally activated delayed fluorescent material is 2 to 10wt%, preferably 5 to 10wt%, most preferably 6 to 8wt%, which means that the bispyridinephenazine thermally activated delayed fluorescent material accounts for The mass percentage of the total layer.
  • the host material is a bipolar fluorescent material.
  • the electroluminescent device of the delayed fluorescent material is composed of an anode, a hole injection layer, a hole transport layer, a blocking layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode; specifically, indium tin oxide (ITO) can be used as Anode, bispyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexanenitrile (HATCN) was used as hole injection layer (HIL ),
  • the above is based on 11-(9,9-dimethylacridin-10(9H)-yl)bipyridyl[3,2-a:2',3'-c]phenazine (DPPZ-DMAC) and 11,12 -Bis(9,9-dimethylacridin-10(9H)-yl)bipyridyl[3,2-a:2',3'-c]phenazine (DPPZ-2DMAC) red thermally activated delayed fluorescent material
  • the preparation method of the electroluminescent device is that, on the anode, the hole injection layer, the hole transport layer, the blocking layer, the light emitting layer, the electron transport layer, the electron injection layer, and the cathode are sequentially vacuum-evaporated to obtain the bispyridyl-based Thermal activation of [3,2-a2',3'-c]phenazine acceptors for red-emitting electroluminescent devices with delayed fluorescence. Vacuum evaporation is a conventional
  • the organic thin film formed by the invention has high surface smoothness, stable chemical and physical properties and high luminous efficiency, and the obtained organic electroluminescent device has good performance.
  • the invention provides a method for synthesizing and preparing a novel heat-activated delay material based on bispyrido[3,2-a2',3'-c]phenazine acceptor; and a method based on bispyrido[3,2-a2', 3'-c] phenazine receptor thermally activated delay material OLED, to achieve the goal of its EQE exceeding 25%; to solve the existing orange-red light/red light TADF material synthesis preparation steps, expensive raw materials, synthesis and purification process Complexity, low yield, difficulty in large-scale mass production, few types of materials, and low device efficiency.
  • the red-light heat-activated delayed fluorescent material provided by the invention has few synthesis and preparation steps, easy-to-obtain raw materials, simple synthesis and purification process, high yield, and large-scale synthesis and preparation.
  • the organic electroluminescent device based on it has a good application prospect in the fields of lighting, flat panel display and the like.
  • Fig. 1 is a diagram of device efficiencies of different doping concentrations of an application example.
  • Fig. 2 is a diagram of device efficiencies of different doping concentrations of the application example.
  • Fig. 3 is a diagram of optimal device performance of the application embodiment.
  • the raw materials involved in the present invention are all conventional commercially available products, and the specific operation methods and testing methods are conventional methods in the art;
  • the specific preparation process of the electroluminescent device of thermally activated delayed fluorescence red light material and the materials of each layer are existing technologies, such as vacuum evaporation, the vacuum degree is ⁇ 2 ⁇ 10 -4 Pa, and the deposition rate of the functional layer is 2 ⁇ /s.
  • the deposition rate of the host material is 1 ⁇ /s, that of the LiF layer is 0.1 ⁇ /s, and that of Al is 8 ⁇ /s.
  • the inventiveness of the present invention lies in providing a new thermally activated delayed fluorescent material based on bispyrido[3,2-a2',3'-c]phenazine acceptor, doped with host material and used as the light emitting device of organic electroluminescent device layer.
  • the preferred embodiments of the present invention are described below in conjunction with examples, but it should be understood that these descriptions are only to further illustrate the features and advantages of the present invention, rather than to limit the claims of the present invention.
  • the invention provides a thermally activated delayed fluorescent material 11-(9,9-dimethylacridin-10(9H)-yl) based on bispyrido[3,2-a2',3'-c]phenazine acceptor Bipyridyl[3,2-a:2',3'-c]phenazine (DPPZ-DMAC) and 11,12-bis(9,9-dimethylacridin-10(9H)-yl)bipyridine [3,2-a:2',3'-c]phenazine (DPPZ-2DMAC).
  • the structural formula is as follows: .
  • the bispyridylphenazine thermally activated delayed fluorescent material is DPPZ-DMAC or DPPZ-2DMAC.
  • DPPZ-DMAC DPPZ-DMAC
  • DPPZ-2DMAC DPPZ-2DMAC
  • the preparation method of the thermally activated delayed fluorescent material based on the bispyrido[3,2-a:2',3'-c]phenazine acceptor of the present invention is as follows.
  • 11-fluorobipyridino[3,2-a:2',3'-c]phenazine (or 11,12-fluorobipyridino[3,2-a:2',3'-c]phenazine)
  • the molar ratio of 9,9-dimethyl-9,10-dihydroacridine is 1:1.2 (or 1:2.4) for reaction; the reaction is carried out in the presence of NaH and nitrogen protection; the reaction temperature is 100-140 °C, The reaction time is 12-24 h.
  • the reaction liquid is extracted, and then the organic phases are combined, and then filtered, separated and purified by column chromatography to obtain the thermally activated delayed fluorescent material 11-(9,9-dimethylacridine-10(9H)- base) bipyridyl[3,2-a:2',3'-c]phenazine (DPPZ-DMAC) and 11,12-bis(9,9-dimethylacridin-10(9H)-yl) Bipyridyl[3,2-a:2',3'-c]phenazine (DPPZ-2DMAC); preferably, the extraction solvent can be dichloromethane or chloroform.
  • the eluent used in column chromatography is composed of one of the less polar organic solvents such as petroleum ether, isopentane, n-pentane, hexane, and cyclohexane, and another organic solvent with greater polarity.
  • Ratio such as dichloromethane, chloroform, ethyl acetate, ethanol, etc., the volume ratio is 1:2 ⁇ 5.
  • 6-Oxo-1,10-phenanthroline-5(6H)-subphyllin) oxyketone (0.70 g, 3.31 mmol) and 4-fluorobenzene-1,2-diamine (0.46 g, 3.65 mmol) were dissolved in 50 mL of ethanol.
  • the mixed solution was refluxed at 90 °C for 12 h under nitrogen atmosphere, and poured into ice water to stir after stopping the reaction. The precipitate was collected by filtration and washed with ethanol.
  • the crude product of DPPZ-F (0.81 g, 2.70 mmol) was obtained, which was directly used in the next reaction. The yield was 81.57%.
  • the crude product was further purified by column chromatography using dichloromethane (DCM) and ethanol (50/1, v/v) as the eluent to obtain DPPZ-DMAC as an orange solid (0.45 g, 0.92 mmol).
  • the yield is 34.55%.
  • the eluent used in column chromatography is petroleum ether and ethanol in a volume ratio of 1:3.
  • 6-Oxo-1,10-phenanthroline-5(6H)-subphyllin) oxyketone (0.70 g, 3.31 mmol) and 4,5-difluorobenzene-1,2-diamine (0.57 g, 7.94 mmol) was dissolved in 50 mL ethanol.
  • the mixed solution was refluxed at 90 °C under a nitrogen atmosphere, and a large amount of precipitation appeared after 12 h.
  • the mixture was cooled to room temperature, and the precipitate was collected by filtration and washed with ethanol to give DPPZ-2F as a solid (0.95 g, 2.98 mmol), which was used without further purification.
  • the yield was 90.03%.
  • the crude product was further purified by column chromatography using dichloromethane (DCM) and ethanol (50/1, v/v) as the eluent to obtain an orange solid (1.43 g, 2.05 mmol). The yield was 72.44%.
  • the eluent used in column chromatography is petroleum ether and ethanol in a volume ratio of 1:3.
  • Example 1 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 2 wt% DPPZ-DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (2 wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; (3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then use a sealing cover with epoxy-type ultraviolet curable resin glass to cover the above-mentioned film-forming device. The substrate is sealed by UV curing; the specific packaging is a conventional technology.
  • Example 2 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 6 wt% DPPZ-DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (6 wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; (3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then use a sealing cover with epoxy-type ultraviolet curable resin glass to cover the above-mentioned film-forming device. The substrate is sealed by UV curing; the specific packaging is a conventional technology.
  • Example 3 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 10 wt% DPPZ-DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (10 wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; (3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then use a sealing cover with epoxy-type ultraviolet curable resin glass to cover the above-mentioned film-forming device. The substrate is sealed by UV curing; the specific packaging is a conventional technology.
  • Example 4 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 2 wt% DPPZ-2DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (2 wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; (3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then use a sealing cover with epoxy-type ultraviolet curable resin glass to cover the above-mentioned film-forming device. The substrate is sealed by UV curing; the specific packaging is a conventional technology.
  • Example 5 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 6 wt% DPPZ-2DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (6 wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; (3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then use a sealing cover with epoxy-type ultraviolet curable resin glass to cover the above-mentioned film-forming device. The substrate is sealed by UV curing; the specific packaging is a conventional technology.
  • Example 6 Fabrication and performance evaluation of an organic electroluminescent device with a doping concentration of 10 wt% DPPZ-2DMAC as the light-emitting layer: (1) Pretreatment of the glass anode: select indium tin oxide (ITO) glass (3 ⁇ 3 mm) as a transparent electrode and substrate; wash the glass substrate with ethanol, and then treat it with UV-ozone to obtain a pretreated glass substrate; (2) Vacuum evaporation: use vacuum on the pretreated glass substrate Vacuum evaporation of each layer is carried out by evaporation method, and the treated glass substrate is placed in a vacuum evaporation chamber with a vacuum degree of ⁇ 2 ⁇ 10 -4 Pa.
  • ITO indium tin oxide
  • the device structure is as follows: ITO/HATCN (10 nm)/TAPC (45 nm)/TCTA (10 nm)/CBP: TADF material (10wt%) (25 nm)/B3PYMPM (50 nm)/LiF (1 nm)/Al (100 nm); specific evaporation of each layer is a conventional technology; ( 3) Device packaging: Seal the prepared organic electroluminescent device in a nitrogen atmosphere glove box with a water oxygen concentration below 1 ppm, and then cover the above-mentioned film-forming substrate with a sealing cover with epoxy-type ultraviolet curable resin glass It is sealed by ultraviolet curing; the specific packaging is a conventional technology.
  • a DC current was applied to the fabricated organic electroluminescent device, and the PhotoResearch PR655 luminance meter was used to evaluate the luminous performance; a computer-controlled Keithley 2400 digital source meter was used to measure the current-voltage characteristics.
  • the luminescent properties of the organic electroluminescent device are measured under the condition of changing the applied DC voltage. The performance of the device is shown in Table 1, Table 2 and Figure 1, Figure 2, and Figure 3.

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Abstract

本发明涉及一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，在阳极上依次真空蒸镀空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极，得到电致发光器件。本发明提供的电致发光器件可发射橘红色或者红色荧光（λ=598或616 nm），器件外量子效率EQE超过25%，且具有驱动电压低，效率高等优点。

Description

一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件 技术领域
本发明涉及有机电致发光材料领域，尤其涉及一种可工业化、性能好的基于11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-2DMAC）红色热激活延迟荧光材料的电致发光器件及其制备方法。
 背景技术
电致发光(electroluminescent)，又可称电场发光，简称EL，是通过加在两电极的电压产生电场，被电场激发的电子碰击发光中心，而引致电子在能级间的跃迁、变化、复合导致发光的一种物理现象。一般认为是在强电场作用下，电子的能量相应增大，直至远远超过热平衡状态下的电子能量而成为过热电子，这过热电子在运动过程中可以通过碰撞使晶格离化形成电子、空穴对，当这些被离化的电子、空穴对复合或被激发的发光中心回到基态时便发出光来。从发光原理电致发光可以分为高场电致发光和低场电致发光。高场电致发光是一种体内发光效应。
由于低功耗、抗震、柔性、高效率和高亮度的独特优势，有机发光器件（OLED）在显示和固态照明领域越来越突出。基于常规荧光材料的第一代发光器件OLED显示内部量子效率（IQE）高达25%，磷光材料可以在重金属的帮助下通过强自旋轨道耦合效应利用单线态和三线态激子，并将 IQE 提高到 100%。虽然磷光材料显示出高效率并已成功应用于商业OLED产品，但成本问题存在劣势。与磷光配合物相比，热激活延迟荧光（TADF）材料由于不存在贵金属系统而具有显着的资源优势和较低的成本。TADF材料可以通过将三线态激子通过从最低三重激发态（T 1）通过反系间穿越到单重激发态（S 1）上，转化成光子而使IQE也可达到100%，可与磷光器件相媲美。因而在过去几年，在有机电致发光领域引起了极大的关注。
发光材料是一种半导体化合物，掺杂适当的杂质引进发光中心或形成某种介电状态。当它与电极或其他介质接触时，其势垒处于反向时，来自电极或界面态的电子，进人发光材料的高场区，被加速并成为过热电子。近年来，橙红色TADF发射器引起了极大的兴趣。然而现有TADF材料通常伴随着强烈的非辐射过程和小的Φ PL值并存在严重的浓度猝灭效应。因此，使用现有TADF材料很难实现良好的外部量子效率(EQE)。
技术问题
本发明公开了一种基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟材料的电致发光器件及其制备方法。用来解决现有红色TADF材料严重的浓度猝灭效应等问题，同时解决现有橙红光/红光TADF材料合成制备步骤多，原料昂贵，合成及纯化工艺复杂，产率不高，难于大规模量产的问题；尤其是，该双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟的红光材料掺杂发光层制备的OLED，实现其EQE超过25%的目标。
 技术解决方案
本发明采用如下技术方案：一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，所述红光电致发光器件的发光层由双吡啶吩嗪热激活延迟荧光材料掺杂主体材料制备。
一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件发光层，所述红光电致发光器件发光层由双吡啶吩嗪热激活延迟荧光材料掺杂主体材料制备。
本发明所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，包括阳极、空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极，其制备方法为常规技术；比如在阳极上依次制备空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极，得到述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件。本发明的创造性在于所述红光电致发光器件发光层由双吡啶吩嗪热激活延迟荧光材料掺杂主体材料制备，其余材料为电致发光器件常规材料，具体各层的制备方法为常规技术，比如真空蒸镀。
本发明中，所述双吡啶吩嗪热激活延迟荧光材料为DPPZ-DMAC或者DPPZ-2DMAC。
本发明中，所述双吡啶吩嗪热激活延迟荧光材料的掺杂浓度为2～10wt%，优选5～10wt%，最优选6～8wt%，指双吡啶吩嗪热激活延迟荧光材料占发光层总量的质量百分数。
本发明中，主体材料为双极性荧光材料。
本发明公开的基于11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-2DMAC）红色热激活延迟荧光材料的电致发光器件由阳极、空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极组成；具体可以为，氧化铟锡（ITO）用作阳极、双吡嗪并[2,3-f：2'，3'-h]喹喔啉-2,3,6,7,10,11-己腈（HATCN）用作空穴注入层（HIL）、4,4'-（环己烷-1,1-二基）双（N，N-二-对甲苯基苯胺）（TAPC）用作空穴传输层（HTL）、三（4-（9H-咔唑-9-基）苯基）胺(TCTA)用作电子/激子阻挡层（EBL）、11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-2DMAC）红色热激活延迟荧光材料作客体材料掺杂4,4'-二（9H-咔唑-9-基）-1,1'-联苯(CBP)主体材料共同用作发光层（EML）、4,6-双（3,5-二（吡啶-3-基）苯基）-2-甲基嘧啶(B3PYMPM)用作电子传输层（ETL）、氟化锂（LiF）用作电子注入层（EIL）、铝（Al）用作阴极；作为示例，有机电致发光器件各层规格为：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP：TADF材料（X wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）。
上述基于11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-2DMAC）红色热激活延迟荧光材料的电致发光器件的制备方法为，在阳极上依次真空蒸镀空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极，得到所述基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟荧光的红光材料的电致发光器件。真空蒸镀为常规技术。
 有益效果
对于本发明所述的基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟材料所形成的有机电致发光器件的制备方法以及其他原料没有特殊的限制。利用本发明所形成的有机薄膜具有高表面光滑性、化学物理性质稳定高发光效率，所得到的有机电致发光器件性能良好。
本发明提供一种新型基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟材料的合成制备方法；以及基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟材料的OLED，实现其EQE超过25%的目标；用以解决现有橙红光/红光TADF材料合成制备步骤多，原料昂贵，合成及纯化工艺复杂，产率不高，难于大规模量产、材料种类少、器件效率低等问题。本发明提供的红光热激活延迟荧光材料合成制备步骤少，原料易得，合成及纯化工艺简单，产率高，可大规模合成制备。基于其的有机电致发光器件在照明、平板显示等领域具有很好的应用前景。
 附图说明
图1是应用实施例的不同掺杂浓度器件效率图。
图2是应用实施例的不同掺杂浓度器件效率图。
图3是应用实施例的最优器件性能图。
 本发明的实施方式
本发明涉及的原料都为常规市售产品，具体操作方法以及测试方法为本领域常规方法；尤其基于本发明基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟荧光的红光材料的电致发光器件的具体制备过程以及各层材料为现有技术，比如真空蒸镀，真空度≤2×10 -4Pa，功能层沉积速率为2Å/s，主体材料的沉积速率为1Å/s，LiF层沉积速率为0.1Å/s，Al的沉积速率8Å/s。
本发明的创造性在于提供新的基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟荧光材料，掺杂主体材料共同用作有机电致发光器件的发光层。为了进一步理解本发明，下面结合实施例对本发明优选实施方案进行描述，但是应当理解，这些描述只是为进一步说明本发明的特征和优点，而不是对本发明权利要求的限制。
本发明提供基于双吡啶并[3,2-a2',3'-c]吩嗪受体的热激活延迟荧光材料11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2'，3'-c]吩嗪（DPPZ-2DMAC）。
结构式如下所示： 。
本发明中，所述双吡啶吩嗪热激活延迟荧光材料为DPPZ-DMAC或者DPPZ-2DMAC。以11-氟双吡啶[3,2-a:2'，3'-c]吩嗪和9,9-二甲基-9,10-二氢吖啶为原料，反应制备DPPZ-DMAC；以11，12-氟双吡啶[3,2-a:2'，3'-c]吩嗪和9,9-二甲基-9,10-二氢吖啶为原料，反应制备DPPZ-2DMAC。
本发明基于双吡啶并[3,2-a:2',3'-c]吩嗪受体的热激活延迟荧光材料的制备方法如下。
以6-氧代-1,10-邻菲罗啉-5（6H）-亚叶状）氧酮和4-氟苯-1,2-二胺（或4,5-二氟苯-1,2-二胺）为原料，反应制备得到11-氟双吡啶[3,2-a:2'，3'-c]吩嗪（或11,12-氟双吡啶[3,2-a:2'，3'-c]吩嗪）；反应完毕后，将反应液直接抽滤得大量固体，粗产物用乙醇不断淋洗，得到11-氟双吡啶[3,2-a:2',3'-c]吩嗪（DPPZ-F），或11,12-氟双吡啶[3,2-a:2',3'-c]吩嗪（DPPZ-2F）。反应可示意如下： 。
11-氟双吡啶[3,2-a:2',3'-c]吩嗪（或11,12-氟双吡啶[3,2-a:2',3'-c]吩嗪）、9,9-二甲基-9,10-二氢吖啶的摩尔比1:1.2（或1:2.4）反应；反应在NaH存在下、氮气保护下进行；反应的温度为100～140 ℃，反应的时间为12～24 h。反应完毕后，萃取反应液，然后合并有机相，再抽滤，经过柱层析分离纯化，得到所述热激活延迟荧光材料11-（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2',3'-c]吩嗪（DPPZ-DMAC）和11,12-双（9,9-二甲基吖啶-10（9H）-基）联吡啶[3,2-a:2',3'-c]吩嗪（DPPZ-2DMAC）；优选的，萃取溶剂可以是二氯甲烷或三氯甲烷。柱层析采用洗脱剂是由石油醚、异戊烷、正戊烷、己烷、环己烷等极性较小的有机溶剂中的一种与另一种极性较大的有机溶剂配比而成，如二氯甲烷、三氯甲烷、乙酸乙酯、乙醇等，其体积比为1：2～5。
将6-氧代-1,10-邻菲罗啉-5（6H）-亚叶状）氧酮(0.70 g, 3.31 mmol)和4-氟苯-1,2-二胺 (0.46 g, 3.65 mmol) 溶于50 mL乙醇中。将混合溶液在90℃、氮气气氛下回流12 h，停止反应后倒入冰水中搅拌。沉淀物通过过滤收集，用乙醇洗涤。得到DPPZ-F粗产物(0.81 g, 2.70 mmol)，直接用于下一步反应。收率为81.57%。
9,9-二甲基-9,10-二氢吖啶(0.67 g, 3.20 mmol)溶于10 ml N,N-二甲基甲酰胺(DMF)中；然后在冰水浴下，氮气氛围中，将0.09 g （3.83 mmol）的氢化钠加入到溶液中，搅拌30分钟，再加入DPPZ-F (0.80 g, 2.66 mmol)；然后在90℃加热24小时后，将反应混合物倒入冰水中。沉淀物通过过滤收集，用水清洗。粗产物以二氯甲烷(DCM)和乙醇(50/1,v/v)为洗脱液，柱层析进一步纯化得到橘红色固体DPPZ-DMAC (0.45 g, 0.92 mmol)。收率为34.55%。柱层析采用洗脱剂是由石油醚、乙醇，其体积比为1∶3。
化合物DPPZ-DMAC结构检测具体如下： 1H NMR (400 MHz, DMSO) δ 9.58-9.50 (m, 2H), 9.28 – 9.21 (m, 2H), 8.64 (d, J = 8.9 Hz, 1H), 8.44 (d, J = 2.2 Hz, 1H), 8.05 – 7.91 (m, 3H), 7.58 (dd, J = 7.4, 1.8 Hz, 2H), 7.02 (pd, J = 7.2, 1.5 Hz, 4H), 6.45 (dd, J = 7.8, 1.4 Hz, 2H), 1.70 (s, 6H). 13C NMR (101 MHz, CDCl 3) δ 152.78, 152.70, 148.36, 148.28, 143.65, 143.53, 141.86, 141.45, 141.39, 140.54, 133.99, 133.65, 132.35, 131.33, 130.63, 127.54, 127.45, 126.50, 125.40, 124.36, 121.53, 114.91, 36.25, 30.90. MALDI-TOF-MS: m/z: calculated for C33H23N5: 489.20 (100%), found:490.19。
将6-氧代-1,10-邻菲罗啉-5（6H）-亚叶状）氧酮 (0.70 g, 3.31 mmol) 和4，5-二氟苯-1,2-二胺 (0.57 g, 7.94 mmol)溶于50 mL乙醇中。混合溶液在90℃、氮气气氛下回流，12 h后出现大量沉淀。将混合物冷却至室温，过滤收集沉淀，用乙醇洗涤得到DPPZ-2F固体(0.95 g, 2.98 mmol)，无需进一步纯化即可使用。收率为90.03%。
9,9-二甲基-9,10-二氢吖啶(0.67 g, 3.20 mmol)溶于10 ml N,N-二甲基甲酰胺(DMF)中。然后在冰水浴下，氮气氛围中，将0.09 g （3.83 mmol）的氢化钠加入到溶液中，搅拌30分钟，再加入DPPZ-2F (0.90 g, 2.83 mmol)，然后在90℃加热24小时后，将反应混合物倒入冰水中。沉淀物通过过滤收集，用水清洗。粗产物以二氯甲烷(DCM)和乙醇(50/1,v/v)为洗脱液，柱层析进一步纯化得到橘红色固体(1.43 g, 2.05 mmol)。收率为72.44%。柱层析采用洗脱剂是由石油醚、乙醇，其体积比为1∶3。
化合物DPPZ-2DMAC结构检测具体如下： 1H NMR (400 MHz, CDCl 3) δ 9.67 (dd, J = 8.1, 1.7 Hz, 2H), 9.34 (dd, J = 4.4, 1.7 Hz, 2H), 8.82 (s, 2H), 7.84 (dd, J = 8.1, 4.5 Hz, 2H), 7.27 (d, J = 1.5 Hz, 2H), 7.25 (d, J = 1.5 Hz, 2H), 6.80-6.69 (m, 8H), 6.55 (dd, J = 8.2, 1.1 Hz, 4H), 1.32 (s, 12H). 13C NMR (101 MHz, CDCl 3) δ 153.02, 148.51, 143.17, 142.39, 142.12, 139.20, 136.41, 134.17, 130.32, 127.42, 125.78, 125.68, 124.51, 121.14, 114.46, 35.64, 30.95. MALDI-TOF-MS: m/z: calculated for C 33H 23N 5: 697.41 (100%), found: 696.30。
由上述检测结果可知，化合物DPPZ-DMAC和DPPZ-2DMAC的结构正确。化合物DPPZ-DMAC和DPPZ-2DMAC的光物理和电化学性质如下。
。
以下通过应用实施例说明本发明合成的化合物在器件中作为发光层材料的应用效果。
实施例一 掺杂浓度为2 wt%的DPPZ-DMAC为发光层的有机电致发光器件的制作与性能评价：（1）玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（2 wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
实施例二 掺杂浓度为6 wt%的DPPZ-DMAC为发光层的有机电致发光器件的制作与性能评价：（1）玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（6 wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
实施例三 掺杂浓度为10 wt%的DPPZ-DMAC为发光层的有机电致发光器件的制作与性能评价：（1)玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（10 wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
实施例四 掺杂浓度为2 wt%的DPPZ-2DMAC为发光层的有机电致发光器件的制作与性能评价：（1)玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（2 wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
实施例五 掺杂浓度为6 wt%的DPPZ-2DMAC为发光层的有机电致发光器件的制作与性能评价：（1）玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（6 wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
实施例六 掺杂浓度为10 wt%的DPPZ-2DMAC为发光层的有机电致发光器件的制作与性能评价：（1）玻璃阳极的预处理：选取氧化铟锡（ITO）玻璃（3×3 mm）作为透明电极及基板；用乙醇将玻璃基板洗净后，再用UV-臭氧进行处理，得到预处理的玻璃基板；（2）真空蒸镀：在所述预处理的玻璃基板上用真空蒸镀法进行各层的真空蒸镀，将处理后的玻璃基板放入真空蒸镀腔内，真空度≤2×10 -4Pa，器件结构如下：ITO/HATCN（10 nm）/TAPC（45 nm）/TCTA（10 nm）/CBP∶TADF材料（10wt%）（25 nm）/B3PYMPM（50 nm）/LiF（1 nm）/Al（100 nm）；具体各层蒸镀为常规技术；（3）器件封装：将制作好的有机电致发光器件密封在水氧浓度1 ppm以下的氮气氛围手套箱内，然后使用带有环氧型紫外线固化树脂玻璃质的密封盖盖住上述成膜基板并紫外固化进行密封；具体封装为常规技术。
对所制作的有机电致发光器件施加直流电流，使用PhotoResearch PR655亮度计来评价发光性能；使用电脑控制的Keithley 2400型数字源表测量电流-电压特性。所述有机电致发光器件的发光性质是在外加直流电压变化的情况下进行测定的。器件性能见表1、表2和图1、图2、图3。
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本发明提供的基于该材料有机电致发光器件可发射黄色或者橙红色荧光（λ=598或616 nm），器件外量子效率EQE为27.8%和12.9%，且具有驱动电压低，发光稳定性好等优点。在平板显示和照明等领域具有广泛的应用前景。

Claims (10)

  1. 一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，其特征在于：所述红光电致发光器件的发光层由双吡啶吩嗪热激活延迟荧光材料掺杂主体材料制备。
  2. 根据权利要求1所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，其特征在于：所述双吡啶吩嗪热激活延迟荧光材料为DPPZ-DMAC或者DPPZ-2DMAC。
  3. 根据权利要求1所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，其特征在于：所述红光电致发光器件包括阳极、空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极。
  4. 根据权利要求1所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件，其特征在于：所述双吡啶吩嗪热激活延迟荧光材料的掺杂浓度为2～10wt%。
  5. 权利要求1所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件的制备方法，其特征在于：在阳极上依次制备空穴注入层、空穴传输层、阻挡层、发光层、电子传输层、电子注入层、阴极，得到述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件。
  6. 根据权利要求5所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件的制备方法，其特征在于：以11-氟双吡啶[3,2-a:2'，3'-c]吩嗪和9,9-二甲基-9,10-二氢吖啶为原料，反应制备DPPZ-DMAC；以11，12-氟双吡啶[3,2-a:2'，3'-c]吩嗪和9,9-二甲基-9,10-二氢吖啶为原料，反应制备DPPZ-2DMAC。
  7. 一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件发光层，其特征在于：所述红光电致发光器件发光层由双吡啶吩嗪热激活延迟荧光材料掺杂主体材料制备。
  8. 根据权利要求7所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件发光层，其特征在于：主体材料为双极性荧光材料。
  9. 权利要求7所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件发光层在制备电致发光器件中的应用。
  10. 权利要求1所述基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件在制备电致发光装置中的应用。
PCT/CN2022/109312 2022-03-01 2022-07-31 一种基于双吡啶吩嗪热激活延迟荧光材料的红光电致发光器件 WO2023165078A1 (zh)

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