WO2023160685A1 - 一种大功率放大器的输入电路、装置及系统 - Google Patents

一种大功率放大器的输入电路、装置及系统 Download PDF

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Publication number
WO2023160685A1
WO2023160685A1 PCT/CN2023/078338 CN2023078338W WO2023160685A1 WO 2023160685 A1 WO2023160685 A1 WO 2023160685A1 CN 2023078338 W CN2023078338 W CN 2023078338W WO 2023160685 A1 WO2023160685 A1 WO 2023160685A1
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capacitor
network
input circuit
phase
power amplifier
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PCT/CN2023/078338
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English (en)
French (fr)
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张勇
马强
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苏州远创达科技有限公司
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Publication of WO2023160685A1 publication Critical patent/WO2023160685A1/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/42—Networks for transforming balanced signals into unbalanced signals and vice versa, e.g. baluns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Definitions

  • the invention belongs to the matching technical field of semiconductor power devices, and in particular relates to an input circuit, device and system of a high-power amplifier.
  • the RF power amplifier is the most important part of the RF front end. Its indicators directly affect the performance of the entire system. With the development of communication technology, the transmission power of the system has increased accordingly, while at the same time, the demand for small size has not changed. This puts forward higher requirements for RF power amplifiers: high power, high efficiency, small circuit area and so on.
  • Input/output circuits play a key role in increasing the power and efficiency of RF power amplifiers. Especially for high-power devices, it is often synthesized by many power units. As shown in Figure 1, a high-power amplifier includes 3 power units. These 3 power units respectively amplify and synthesize the input signal, and then output it. The efficiency of synthesis determines the power and efficiency of the final output. The efficiency of synthesis is determined by the input circuit and output circuit. Therefore, a good input/output circuit is of great significance to a high-power RF power amplifier, especially a high-power RF power amplifier.
  • FIG. 2 is a structural diagram of an input circuit of a traditional high-power amplifier
  • FIG. 3 is an equivalent circuit diagram thereof.
  • the circuit structure realizes the matching of the fundamental wave impedance and the phase and amplitude of the harmonic impedance within a certain range through a discrete low-pass network. However, after the signal of the input circuit passes through the three amplifying units of the amplifier, the synthesis performance will be lost.
  • the input circuit has certain limitations in the control of harmonics, especially in the high frequency band (>6GHz), it is difficult to obtain a suitable harmonic impedance phase and amplitude. Therefore, the effect of the input circuit on improving the synthesis efficiency is not obvious, and at the same time, the improvement of the efficiency of the power amplifier itself in the high frequency band (>6 GHz) is also limited.
  • the purpose of the present invention is to provide an input circuit, device and system of a high-power amplifier, which can conveniently realize fundamental wave impedance matching, and can also balance branch phases, reduce power combining losses, and optimize harmonic modulation Effect. Thereby improving the power and efficiency of power devices.
  • An input circuit of a high-power amplifier the input circuit is arranged between the input terminal and the control terminal of the amplifier, the input circuit includes an impedance matching network, a phase balancing network and a harmonic phase tuning network, and the impedance matching network is used
  • the phase balance network is used to equalize the composite phase of the multipath signal
  • the harmonic phase tuning network is used to adjust the phase and amplitude of the second harmonic impedance at the high frequency end.
  • the impedance matching network, phase balance The network and the harmonic phase tuning network cooperate to match the fundamental impedance.
  • the impedance matching network includes a first capacitor connected to the input terminal, the other end of the first capacitor is grounded, and a first inductor connected to the input terminal, the other end of the first inductor is connected to Input to the Phase Balance Network.
  • the phase balance network includes a transmission line with gradual impedance
  • the transmission line includes a first end face and a second end face, the diameter from the first end face to the second end face gradually becomes larger, and the first end face of the transmission line
  • the end face is connected to the other end of the first inductance of the impedance matching network
  • the second end face of the transmission line is connected to one end of the second capacitor, the other end of the second capacitor is grounded, and one end of the second capacitor is also passed through the second
  • the inductor is connected to one end of the third capacitor, the other end of the third capacitor is grounded, and one end of the third capacitor is also connected to the input end of the harmonic phase tuning network.
  • the second inductance includes at least two sub-second inductances, and the sub-second inductances are arranged in rows in space.
  • a grounding module is arranged between the second capacitor and the third capacitor.
  • the harmonic phase tuning network includes a fourth capacitor connected to one end of the third capacitor, and the other end of the fourth capacitor is connected to the control terminal of the amplifier through the third inductor.
  • the third inductance includes multiple sets of sub-third inductances, and the number of the sub-third inductances is equal to the number of sub-power units of the amplifier.
  • the capacitor of the amplifier and the input circuit are integrated into different chips, and the inductance is the bonding wire inductance.
  • the present invention also discloses a radio frequency power amplifier device, comprising the input circuit of any one of the above high power amplifiers.
  • the present invention also discloses a radio frequency power amplifier system, which includes the above radio frequency power amplifier device.
  • the input circuit can easily realize the impedance matching of the fundamental wave, and its phase equalization network can realize the function of equalizing the signal phase, reduce the power combining loss, and thus improve the power and efficiency of the power device.
  • the harmonic phase modulation network of the input circuit has the function of bidirectional adjustment of positive and negative phases.
  • the phase and amplitude of the second harmonic impedance at the high frequency end can be adjusted very effectively.
  • the effect of harmonic modulation can be better realized, thereby further improving the efficiency of the power amplifier.
  • the capacitance of the input circuit integrates the impedance matching network, phase balance network and harmonic phase modulation network on an IPD (passive integrated device), and the inductance is bridged by bonding wires, so that the input circuit can be Reducing the area can take into account the characteristics of high Q value of the bonding wire.
  • Fig. 1 is the circuit diagram of existing a kind of high power amplifier
  • Fig. 2 is the structural diagram of existing a kind of conventional power amplifier input circuit
  • Fig. 3 is the equivalent circuit diagram of existing a kind of conventional power amplifier input circuit
  • Fig. 4 is the structural diagram of the input circuit of a kind of preferred embodiment of the present invention.
  • Fig. 5 is the equivalent circuit diagram of the input circuit of a kind of preferred embodiment of the present invention.
  • FIG. 6 is a structural diagram of an input circuit of another embodiment of the present invention.
  • Fig. 7 is a kind of phase simulation data diagram of conventional power amplifier input circuit signal input terminal to each power unit
  • Fig. 8 is a phase simulation data diagram from the signal input terminal of the input circuit to each power unit in a preferred embodiment of the present invention.
  • FIG. 9 is a comparison chart of harmonic impedance simulation results of the present invention and a conventional input circuit.
  • an input circuit of a high-power amplifier is mainly used for a high-power amplifier, and is set between the input terminal RFin and the amplifier T1 with a control terminal (such as a grid), and the amplifier here is the best for high power amplifiers.
  • the high-power amplifier T1 is generally composed of multiple power units. As shown in Figure 1, a high-power amplifier includes three power units (T1a, T1b, T1c). These 3 power units respectively amplify and synthesize the input signal, and then output it. Wherein, the drain of the amplifier T1 is used as the output terminal RFout, and the source of the amplifier T1 is grounded.
  • the input circuit includes an impedance matching network IMN, a phase balancing network PBN and a harmonic phase tuning network HPTN.
  • the impedance matching network IMN is mainly used for impedance matching, and the phase balancing network PBN is used for equalizing the composite phase of multipath signals.
  • the harmonic The phase tuning network HPTN is used to adjust the phase and amplitude of the second harmonic impedance at the high frequency end.
  • the impedance matching network IMN, the phase balance network PBN and the harmonic phase tuning network HPTN cooperate to match the fundamental wave impedance, that is, the impedance matching network IMN,
  • the phase balance network PBN and the harmonic phase tuning network HPTN work together to match the fundamental impedance, which can match the fundamental impedance more conveniently and efficiently.
  • the input circuit can precisely control the phase and amplitude of the harmonic impedance, better realize the effect of harmonic modulation, and further improve the efficiency of the power amplifier.
  • the impedance matching network IMN includes a first capacitor C1 connected to the input terminal RFin, the other end of the first capacitor C1 is grounded, and a first inductor L1 connected to the input terminal RFin, the first inductor L1 The other end is connected to the input end of the phase balance network PBN.
  • the phase balance network PBN includes a transmission line Ta1 with gradual impedance change.
  • the gradual change transmission line Ta1 has a physical structure with narrow left and wide right, and its shape can be a circular frustum, which plays the role of gradual impedance change. That is, the transmission line Ta1 includes the first The diameter of the first end surface and the second end surface gradually increases from the first end surface to the second end surface.
  • the first inductor L1 may be integrated in the form of a planar spiral inductor or a microstrip line, or may be implemented in the form of a bonding wire.
  • it is implemented by bonding wires, that is, the first inductor L1 bridges the first capacitor C1 and the transmission line Ta1 by using a wire bonding process, and the first inductor L1 is generally composed of multiple wires.
  • the Q value can be improved, the loss can be reduced, and the gain can be increased; on the other hand, the inductance value can be flexibly adjusted to adjust the fundamental and harmonic impedances of different frequencies.
  • the first end of the transmission line Ta1 is connected to the other end of the first inductor L1 of the impedance matching network IMN, the second end of the transmission line Ta1 is connected to one end of the second capacitor C2, the other end of the second capacitor C2 is grounded, and the second end of the second capacitor C2 One end is also connected to one end of the third capacitor C3 through the second inductor L2, the other end of the third capacitor C3 is grounded, and one end of the third capacitor C3 is also connected to the input end of the harmonic phase tuning network HPTN.
  • the second inductor L2 uses a wire bonding process to bridge the second capacitor C2 and the third capacitor C3, and the second inductor L2 is generally composed of multiple wires.
  • the Q value can be improved, the loss can be reduced, and the gain can be increased; on the other hand, the inductance value can be flexibly adjusted to adjust the fundamental and harmonic impedances of different frequencies.
  • a ground module Gpad is disposed between the second capacitor C2 and the third capacitor C3.
  • the second inductance L2 includes at least two sub-second inductances (L2u, L2d), and the sub-second inductances (L2u, L2d) are generally composed of a plurality of lead wires to form an inductance line group, and each group of sub-second inductances has a space Arranged in columns.
  • the sub-second inductors of the second inductor L2 may also be composed of 4 or more groups of sub-second inductors, as shown in FIG. 6 , arranged in columns in space.
  • the harmonic phase tuning network HPTN includes a fourth capacitor C4 connected to one end of the third capacitor C3, and the other end of the fourth capacitor C4 is connected to the control terminal (gate ).
  • the third inductor L3 includes multiple sets of sub-third inductors, and the number of sub-third inductors is equal to the number of sub-power units of the amplifier.
  • the amplifier T1 in Fig. 1 includes 3 power units (T1a, T1b, T1c), and the third inductance L3 includes three sets of sub-third inductances L3a, L3b and L3c, spaced apart from the sub-second inductances L2u and L2d arranged.
  • the third inductor L3 uses a wire bonding process to bridge the fourth capacitor C4 and the control terminal (gate) of the amplifier T1, and the three groups of third inductors L3a, L3b and L3c of the third inductor L3
  • Each group of third inductors generally consists of a plurality of lead wires to form an inductor wire group.
  • the Q value can be improved, the loss can be reduced, and the gain can be increased; on the other hand, the inductance value can be flexibly adjusted to adjust the fundamental and harmonic impedances of different frequencies.
  • the signal After passing through the impedance matching network IMN from the input terminal RFin, it is divided into two paths. After passing through the path P1 and the sub-inductance line group (sub-second inductance) L2u in the second inductor, the signal is divided into two paths. One path is the path P2 and The sub-third inductance line group (sub-third inductance) L3a of the third inductance line group reaches the sub-power unit T1a, and the other path is the path P3 and the sub-third inductance line group L3b of the third inductance line group to reach the sub-power unit T1b.
  • Another signal from the first inductance line group L1 passes through P4 and another inductance line group L2d in the second inductance line group (second inductance), and then is divided into two paths, one is the path P5 and the third inductance
  • the sub-third inductive line group L3b of the line group reaches the sub-power unit T1b
  • the other path is the path P6 and the sub-third inductive line group L3c of the third inductive line group to reach the sub-power unit T1c.
  • the signal from the input terminal RFin reaches the sub-power unit T1a, and the electrical lengths of the sub-power unit T1b and the sub-power unit T1c are almost the same. Therefore, their phases are also the same, which plays a role of phase equalization.
  • the synthesis efficiency of the output signal can be improved. Furthermore, for high-power amplifiers, the loss is reduced, and the power and efficiency are improved.
  • the third sub-group of inductive wires of the third inductive wire group may also be composed of 5 or more sub-inductive wire groups.
  • the amplifier can also be composed of 5 or more sub-power units.
  • a high-power amplifier includes 5 power units (T1a, T1b, T1c, T1d, T1e)
  • the third inductance line group includes 5 sub-third inductance line groups (L3a, L3b, L3c, L3d, L3e)
  • the second inductance L2 includes four groups of sub-second inductances (L2u1, L2u2, L2d1, L2d2), these five power units respectively amplify and synthesize the input signal, and then output it.
  • FIG. 7 shows the phase simulation data from the signal input terminal to each power unit when a conventional input network is used.
  • m4 is the phase value mark at the fundamental frequency of 3.6 GHz from the signal input end to each power unit.
  • m5 is the phase value mark at the second harmonic frequency of 7.2 GHz from the signal input end to each power unit.
  • Fig. 8 is the phase simulation data from the signal input terminal to each power unit when the input circuit of the preferred embodiment of the present invention is adopted.
  • m1 is the phase numerical mark at the fundamental frequency of 3.6 GHz from the signal input end to each power unit.
  • m2 is the phase value mark at the second harmonic frequency of 7.2 GHz from the signal input end to each power unit.
  • the fourth capacitor C4 in the harmonic phase tuning network HPTN and the third inductance line group L3a+L3b+L3c form a series circuit, which has the function of bidirectional adjustment of positive and negative phases, wherein the fourth capacitor C4 realizes negative phase adjustment, and the third inductance line group L3a+L3b+L3c realize positive phase adjustment. It can very effectively reduce the amplitude of the second harmonic at the high frequency end. As shown in Fig. 9, compared with the conventional input network, the amplitude of the second harmonic at the high-frequency end of the circuit of the present invention is much lower, and the bandwidth is also much wider.
  • the resonance point of the equivalent inductance Lev of the series circuit formed by the fourth capacitor C4 and the third inductor line group L3a+L3b+L3c and the third capacitor C3 determines the lowest point of the harmonic impedance. Specifically calculated by the following formula:
  • C d3 is the capacitance of the third parallel capacitor C3.
  • the amplifier and the capacitance of the input circuit are integrated in different chips, and the inductance is the bonding wire inductance.
  • the first capacitor C1 of the input matching circuit IMN, the second capacitor C2 and the third capacitor C3 of the phase balance network PBN, the middle grounding module Gpad and the fourth capacitor C4 of the harmonic phase modulation network HPTN are integrated together Above the IPD (Integrated Passive Device), the circuit area can be effectively reduced.
  • the amplifier T1 is integrated on a semiconductor chip.
  • the present invention also discloses a radio frequency power amplifier device, which comprises the input circuit of any one of the above-mentioned high power amplifiers and is used as a device.
  • the present invention also discloses a radio frequency power amplifier system, which includes the above radio frequency power amplifier device and is used as a system.

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Abstract

本发明公开了一种大功率放大器的输入电路，所述输入电路设置于输入端与放大器的控制端之间，所述输入电路包括阻抗匹配网络、相位平衡网络和谐波相位调谐网络，所述阻抗匹配网络用于阻抗匹配，所述相位平衡网络用于均衡多路径信号的合成相位，所述谐波相位调谐网络用于调节高频端二次谐波阻抗的相位和幅度，所述阻抗匹配网络、相位平衡网络和谐波相位调谐网络协同对基波阻抗进行匹配。可以方便实现基波阻抗匹配，还能够均衡支路相位，减小功率合成损耗，优化谐波调制效果。从而提升功率器件的功率和效率。

Description

一种大功率放大器的输入电路、装置及系统 技术领域
本发明属于半导体功率器件的匹配技术领域，具体地涉及一种大功率放大器的输入电路、装置及系统。
 背景技术
射频功率放大器是射频前端最重要的部件。它的指标直接影响到整个系统的性能。随着通信技术的发展，系统发射功率相应的变大，而同时，对小体积的诉求却没有改变。这就对射频功率放大器提出了更高的要求：大功率，高效率，电路面积小等等。
输入/输出电路对于提高射频功率放大器的功率和效率有着关键的作用。尤其是对于大功率器件，往往是由很多个功率单元合成，如图1所示，一个大功率放大器，包含了3个功率单元。这3个功率单元分别对输入信号进行放大合成，然后输出。合成的效率决定着最终输出的功率大小和效率。而合成的效率又由输入电路和输出电路决定。因此一个良好的输入/输出电路对功率射频功率放大器，尤其是大功率射频功率放大器来说意义重大。
对于大功率射频功率放大器，输入/输出电路不仅要实现最基本的基波阻抗匹配，还需要进行高效的功率合成，同时对谐波阻抗需要精确的控制。最后，还要考虑小型化。图2是一种传统的大功率放大器的输入电路的结构图，图3是其等效电路图。该电路结构通过分立式低通网络实现基波阻抗的匹配和一定范围内的谐波阻抗相位和幅度。但是该输入电路的信号经过放大器的3个放大单元后，合成性能会有所损失。同时该输入电路对谐波的控制存在一定局限性，尤其是高频段(>6GHz)，很难得到合适的谐波阻抗相位和幅度。因此，该输入电路对合成效率的提高效果并不明显，同时对于高频段(>6GHz)的功放本身效率的提升也有限。
 发明内容
针对上述存在的技术问题，本发明目的在于提供一种大功率放大器的输入电路、装置及系统，可以方便实现基波阻抗匹配，还能够均衡支路相位，减小功率合成损耗，优化谐波调制效果。从而提升功率器件的功率和效率。
为了解决现有技术中的这些问题，本发明提供的技术方案是：
一种大功率放大器的输入电路，所述输入电路设置于输入端与放大器的控制端之间，所述输入电路包括阻抗匹配网络、相位平衡网络和谐波相位调谐网络，所述阻抗匹配网络用于阻抗匹配，所述相位平衡网络用于均衡多路径信号的合成相位，所述谐波相位调谐网络用于调节高频端二次谐波阻抗的相位和幅度，所述阻抗匹配网络、相位平衡网络和谐波相位调谐网络协同对基波阻抗进行匹配。
优选的技术方案中，所述阻抗匹配网络包括与输入端连接的第一电容，所述第一电容的另一端接地，和与输入端连接的第一电感，所述第一电感的另一端连接相位平衡网络的输入端。
优选的技术方案中，所述相位平衡网络包括阻抗渐变的传输线，所述传输线包括第一端面和第二端面，所述第一端面到第二端面的直径逐渐变大，所述传输线的第一端面连接所述阻抗匹配网络的第一电感的另一端，所述传输线的第二端面连接第二电容的一端，所述第二电容的另一端接地，所述第二电容的一端还通过第二电感连接第三电容的一端，所述第三电容的另一端接地，所述第三电容的一端还连接谐波相位调谐网络的输入端。
优选的技术方案中，所述第二电感包括至少两组子第二电感，所述子第二电感在空间上分列排布。
优选的技术方案中，所述第二电容与所述第三电容间设置有接地模块。
优选的技术方案中，所述谐波相位调谐网络包括与第三电容的一端连接的第四电容，所述第四电容的另一端通过第三电感连接放大器的控制端。
优选的技术方案中，所述第三电感包括多组子第三电感，所述子第三电感的个数与放大器的子功率单元的个数相等。
优选的技术方案中，所述放大器与所述输入电路的电容集成于不同的芯片，电感为键合线电感。
本发明还公开了一种射频功率放大器装置，包括上述任一项所述的大功率放大器的输入电路。
本发明又公开了一种射频功率放大器系统，包括上述的射频功率放大器装置。
相对于现有技术中的方案，本发明的优点是：
1、该输入电路可以方便实现基波阻抗匹配，其相位均衡网络，能够实现均衡信号相位的功能，减小功率合成损耗，从而提升功率器件的功率和效率。
2、该输入电路的谐波相位调制网络，具有正负相位双向调节功能。可以非常有效调节高频端二次谐波阻抗的相位和幅度。可以更好的实现谐波调制的效果，从而进一步提升功率放大器的效率。
3、该输入电路的将阻抗匹配网络、相位平衡网络及谐波相位调制网络的电容集成在一块IPD（无源集成器件）上面，电感采用键合线的方式进行桥接，这样该输入电路既能缩小面积又能兼顾键合线高Q值的特点。
 附图说明
下面结合附图及实施例对本发明作进一步描述：
图1为现有的一种大功率放大器的电路图；
图2为现有的一种常规功率放大器输入电路的结构图；
图3为现有的一种常规功率放大器输入电路的等效电路图；
图4为本发明一种较佳实施例的输入电路的结构图；
图5为本发明一种较佳实施例的输入电路的等效电路图；
图6为本发明另一种实施例的输入电路的结构图；
图7为一种常规功率放大器输入电路信号输入端到各功率单元的相位仿真数据图；
图8为本发明较佳实施例的输入电路信号输入端到各功率单元的相位仿真数据图；
图9为本发明与常规输入电路的谐波阻抗仿真结果对比图。
 具体实施方式
以下结合具体实施例对上述方案做进一步说明。应理解，这些实施例是用于说明本发明而不限于限制本发明的范围。实施例中采用的实施条件可以根据具体厂家的条件做进一步调整，未注明的实施条件通常为常规实验中的条件。
实施例
如图4、5所示，一种大功率放大器的输入电路，主要用于大功率放大器，设置于包括输入端RFin和具有控制端（例如栅极）的放大器T1之间，这里的放大器最好为大功率放大器。大功率放大器T1一般由多个功率单元合成，如图1所示，一个大功率放大器，包含了3个功率单元（T1a、T1b、T1c）。这3个功率单元分别对输入信号进行放大合成，然后输出。其中，放大器T1的漏极作为输出端RFout，放大器T1的源极接地。
该输入电路包括阻抗匹配网络IMN、相位平衡网络PBN和谐波相位调谐网络HPTN，该阻抗匹配网络IMN主要用于阻抗匹配，该相位平衡网络PBN用于均衡多路径信号的合成相位，该谐波相位调谐网络HPTN用于调节高频端二次谐波阻抗的相位和幅度，阻抗匹配网络IMN、相位平衡网络PBN和谐波相位调谐网络HPTN协同对基波阻抗进行匹配，即阻抗匹配网络IMN、相位平衡网络PBN和谐波相位调谐网络HPTN共同作用对基波阻抗进行匹配，可以更方便、高效的对基波阻抗进行匹配。该输入电路能够精确的控制谐波阻抗的相位和幅度，更好的实现谐波调制的效果，从而进一步提升功率放大器的效率。
一较佳的实施例中，阻抗匹配网络IMN包括与输入端RFin连接的第一电容C1，第一电容C1的另一端接地，和与输入端RFin连接的第一电感L1，第一电感L1的另一端连接相位平衡网络PBN的输入端。
一较佳的实施例中，相位平衡网络PBN包括阻抗渐变的传输线Ta1，渐变式传输线Ta1为左窄右宽的物理结构，形状可以为圆台，起到阻抗渐变的作用，即该传输线Ta1包括第一端面和第二端面，第一端面到第二端面的直径逐渐变大。
具体的实现中，第一电感L1可以采用平面螺旋电感或微带线的方式进行集成，也可以采用键合线的方式实现。较佳的，采用键合线的方式实现，即第一电感L1采用引线键合工艺对第一电容C1和传输线Ta1进行桥接，第一电感L1一般由多条引线组成。一方面可以提高Q值，减小损耗，提高增益；另一方面可以灵活调整电感值，以便对于不同频率的基波和谐波阻抗进行调整。
该传输线Ta1的第一端面连接阻抗匹配网络IMN的第一电感L1的另一端，该传输线Ta1的第二端面连接第二电容C2的一端，第二电容C2的另一端接地，第二电容C2的一端还通过第二电感L2连接第三电容C3的一端，第三电容C3的另一端接地，第三电容C3的一端还连接谐波相位调谐网络HPTN的输入端。
具体的实现中，第二电感L2采用引线键合的工艺对第二电容C2和第三电容C3进行桥接，第二电感L2一般由多条引线组成。一方面可以提高Q值，减小损耗，提高增益；另一方面可以灵活调整电感值，以便对于不同频率的基波和谐波阻抗进行调整。
较佳的，第二电容C2与第三电容C3间设置有接地模块Gpad。
较佳的，第二电感L2包括至少两组子第二电感（L2u，L2d），子第二电感（L2u，L2d）一般都由多条引线组成电感线组，每组子第二电感在空间上分列排布。
以此类推，第二电感L2的子第二电感也可以由4组或以上的子第二电感组成，如图6所示，在空间上分列排布。
一较佳的实施例中，谐波相位调谐网络HPTN包括与第三电容C3的一端连接的第四电容C4，第四电容C4的另一端通过第三电感L3连接放大器T1的控制端（栅极）。
较佳的，第三电感L3包括多组子第三电感，子第三电感的个数与放大器的子功率单元的个数相等。例如，图1中的放大器T1包括3个功率单元（T1a、T1b、T1c），第三电感L3包括三组子第三电感L3a、L3b和L3c，空间上与子第二电感L2u和L2d成间隔排布。
具体的实现中，第三电感L3采用引线键合的工艺对第四电容C4和放大器T1的控制端（栅极）进行桥接，第三电感L3的三组子第三电感L3a、L3b和L3c的每一组子第三电感一般都由多条引线组成电感线组。一方面可以提高Q值，减小损耗，提高增益；另一方面可以灵活调整电感值，以便对于不同频率的基波和谐波阻抗进行调整。
信号从输入端RFin经过阻抗匹配网络IMN后，分成两路，一路经过路径P1和第二电感中的一路子电感线组（子第二电感）L2u后，再分成两路，一路为路径P2和第三电感线组的子第三电感线组（子第三电感）L3a，到达子功率单元T1a，另一路为路径P3和第三电感线组的子第三电感线组L3b，到达子功率单元T1b。由第一电感线组L1分出来的另一路信号经过P4和第二电感线组（第二电感）中的另一路子电感线组L2d后，再分成两路，一路为路径P5和第三电感线组的子第三电感线组L3b，到达子功率单元T1b，另一路为路径P6和第三电感线组的子第三电感线组L3c，到达子功率单元T1c。这样，从输入端RFin出发的信号，到达子功率单元T1a，子功率单元T1b和子功率单元T1c的电长度几乎是一样的。从而他们的相位也是相同的，起到了相位均衡的作用，经过放大器T1后，能够提高输出信号的合成效率。进而对于大功率放大器来说减小了损耗，提升了功率和效率。
以此类推，第三电感线组的子第三电感线组也可以由5组或以上的子电感线组组成。放大器也可以由5个或以上的子功率单元组成。如图6所示，一个大功率放大器，包含了5个功率单元（T1a、T1b、T1c、T1d、T1e），第三电感线组包括5组子第三电感线组（L3a、L3b、L3c、L3d、L3e），第二电感L2包括四组子第二电感（L2u1，L2u2，L2d1、L2d2），这5个功率单元分别对输入信号进行放大合成，然后输出。
图7为采用常规输入网络时信号输入端到各功率单元的相位仿真数据。其中，m4为信号输入端到各功率单元的在基波频率3.6GHz处的相位数值标记。m5为信号输入端到各功率单元的在二次谐波频率7.2GHz处的相位数值标记。图8为采用本发明较佳实施例的输入电路时，信号输入端到各功率单元的相位仿真数据。其中，m1为信号输入端到各功率单元的在基波频率3.6GHz处的相位数值标记。m2为信号输入端到各功率单元的在二次谐波频率7.2GHz处的相位数值标记。由图7和图8可知，与常规的输入网络相比，本发明的输入电路相位一致性具有明显的优势。
谐波相位调谐网络HPTN中的第四电容C4和第三电感线组L3a+L3b+L3c形成串联电路，具有正负相位双向调节功能，其中第四电容C4实现负相位调节，第三电感线组L3a+L3b+L3c实现正相位调节。可以非常有效降低高频端二次谐波幅度。如图9所示，与常规的输入网络相比，本发明的电路高频端二次谐波幅度降低了很多，带宽也展宽了很多。第四电容C4和第三电感线组L3a+L3b+L3c形成串联电路的等效电感Lev与第三电容C3的谐振点决定了谐波阻抗的最低点。具体由如下公式计算： 
其中， C d3 为第三并联电容C3的容值。
一较佳的实施例中，放大器与所述输入电路的电容集成于不同的芯片，电感为键合线电感。
具体的实现中，输入匹配电路IMN的第一电容C1，相位平衡网络PBN的第二电容C2和第三电容C3，中间的接地模块Gpad以及谐波相位调制网络HPTN的第四电容C4集成在一块IPD（无源集成器件）上面，可以有效地减小电路面积。放大器T1集成于一半导体芯片上。
本发明还公开了一种射频功率放大器装置，包括上述任一项所述的大功率放大器的输入电路，作为一个装置使用。
本发明又公开了一种射频功率放大器系统，包括上述的射频功率放大器装置，作为一个系统使用。
应当理解的是，本发明的上述具体实施方式仅仅用于示例性说明或解释本发明的原理，而不构成对本发明的限制。因此，在不偏离本发明的精神和范围的情况下所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。此外，本发明所附权利要求旨在涵盖落入所附权利要求范围和边界、或者这种范围和边界的等同形式内的全部变化和修改例。

Claims (10)

  1. 一种大功率放大器的输入电路，所述输入电路设置于输入端与放大器的控制端之间，其特征在于，所述输入电路包括阻抗匹配网络、相位平衡网络和谐波相位调谐网络，所述阻抗匹配网络用于阻抗匹配，所述相位平衡网络用于均衡多路径信号的合成相位，所述谐波相位调谐网络用于调节高频端二次谐波阻抗的相位和幅度，所述阻抗匹配网络、相位平衡网络和谐波相位调谐网络协同对基波阻抗进行匹配。
  2. 根据权利要求1所述的大功率放大器的输入电路，其特征在于，所述阻抗匹配网络包括与输入端连接的第一电容，所述第一电容的另一端接地，和与输入端连接的第一电感，所述第一电感的另一端连接相位平衡网络的输入端。
  3. 根据权利要求2所述的大功率放大器的输入电路，其特征在于，所述相位平衡网络包括阻抗渐变的传输线，所述传输线包括第一端面和第二端面，所述第一端面到第二端面的直径逐渐变大，所述传输线的第一端面连接所述阻抗匹配网络的第一电感的另一端，所述传输线的第二端面连接第二电容的一端，所述第二电容的另一端接地，所述第二电容的一端还通过第二电感连接第三电容的一端，所述第三电容的另一端接地，所述第三电容的一端还连接谐波相位调谐网络的输入端。
  4. 根据权利要求3所述的大功率放大器的输入电路，其特征在于，所述第二电感包括至少两组子第二电感，所述子第二电感在空间上分列排布。
  5. 根据权利要求3所述的大功率放大器的输入电路，其特征在于，所述第二电容与所述第三电容间设置有接地模块。
  6. 根据权利要求3-5任一项所述的大功率放大器的输入电路，其特征在于，所述谐波相位调谐网络包括与第三电容的一端连接的第四电容，所述第四电容的另一端通过第三电感连接放大器的控制端。
  7. 根据权利要求6所述的大功率放大器的输入电路，其特征在于，所述第三电感包括多组子第三电感，所述子第三电感的个数与放大器的子功率单元的个数相等。
  8. 根据权利要求7所述的大功率放大器的输入电路，其特征在于，所述放大器与所述输入电路的电容集成于不同的芯片，电感为键合线电感。
  9. 一种射频功率放大器装置，其特征在于，包括权利要求1-5任一项所述的大功率放大器的输入电路。
  10. 一种射频功率放大器系统，其特征在于，包括权利要求9所述的射频功率放大器装置。
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