WO2023159192A3 - Methods and structures to improve the performance of iii-nitride tunnel junctions - Google Patents

Methods and structures to improve the performance of iii-nitride tunnel junctions Download PDF

Info

Publication number
WO2023159192A3
WO2023159192A3 PCT/US2023/062837 US2023062837W WO2023159192A3 WO 2023159192 A3 WO2023159192 A3 WO 2023159192A3 US 2023062837 W US2023062837 W US 2023062837W WO 2023159192 A3 WO2023159192 A3 WO 2023159192A3
Authority
WO
WIPO (PCT)
Prior art keywords
iii
nitride
tunnel junction
performance
type
Prior art date
Application number
PCT/US2023/062837
Other languages
French (fr)
Other versions
WO2023159192A2 (en
Inventor
Philip Chan
Matthew S. WONG
Shuji Nakamura
Daniel A. Cohen
Emily TRAGESER
Steven P. Denbaars
Original Assignee
The Regents Of The University Of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Regents Of The University Of California filed Critical The Regents Of The University Of California
Publication of WO2023159192A2 publication Critical patent/WO2023159192A2/en
Publication of WO2023159192A3 publication Critical patent/WO2023159192A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Led Devices (AREA)

Abstract

A III-nitride tunnel junction (TJ) is grown on or above a III-nitride device structure, wherein the III-nitride tunnel junction comprises an n-type III-nitride layer grown on or above a p-type III-nitride layer. An n-type AlxGazN / n-type AlpGawN superlattice (SL) is grown on or above the n-type III-nitride layer of the III-nitride tunnel junction to enhance the electrical performance of the tunnel junction, wherein x+z=1, p+w=1, 0≤x≤1, 0≤z≤1, 0≤p≤1, 0≤w≤1. Tensile strain can also be used to improve tunnel junction performance, wherein a variety of methods can be used to induce the required strain, resulting in improved current injection into the devices to increase the output power, emission uniformity and efficiency of the devices.
PCT/US2023/062837 2022-02-18 2023-02-17 Methods and structures to improve the performance of iii-nitride tunnel junctions WO2023159192A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202263311583P 2022-02-18 2022-02-18
US63/311,583 2022-02-18
US202263319571P 2022-03-14 2022-03-14
US63/319,571 2022-03-14

Publications (2)

Publication Number Publication Date
WO2023159192A2 WO2023159192A2 (en) 2023-08-24
WO2023159192A3 true WO2023159192A3 (en) 2023-11-30

Family

ID=87578982

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2023/062837 WO2023159192A2 (en) 2022-02-18 2023-02-17 Methods and structures to improve the performance of iii-nitride tunnel junctions

Country Status (1)

Country Link
WO (1) WO2023159192A2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200287078A1 (en) * 2019-03-06 2020-09-10 Bolb Inc. Heterostructure and light-emitting device employing the same
US20200335663A1 (en) * 2016-02-05 2020-10-22 The Regents Of The University Of California Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200335663A1 (en) * 2016-02-05 2020-10-22 The Regents Of The University Of California Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers
US20200287078A1 (en) * 2019-03-06 2020-09-10 Bolb Inc. Heterostructure and light-emitting device employing the same

Also Published As

Publication number Publication date
WO2023159192A2 (en) 2023-08-24

Similar Documents

Publication Publication Date Title
CN102185057B (en) Nitride LED (light-emitting diode) structure and nitride LED structure preparing method
WO2016011924A1 (en) EPITAXIAL STRUCTURE FOR IMPROVING EFFICIENCY DROP OF GaN-BASED LED
ATE257977T1 (en) BIPOLAR MOS POWER TRANSISTOR WITHOUT LATCH-UP
CN103137472B (en) In conjunction with the fast IGBT device making method of pipe again
ATE428189T1 (en) LED STRUCTURE BASED ON A GROUP III NITRIDE COMPOUND WITH A UBER GRID
CN107342319B (en) Composite strain Si/SiGe heterojunction bipolar transistor and preparation method thereof
CN207602981U (en) Multiple-active-region semiconductor bar chip of laser is accumulated in a kind of
CN102583227A (en) Three-dimensional ZnO homogeneous pn junction nano array and preparation method thereof
CN103022286A (en) Cascaded GaN-based LED (light-emitting diode) epitaxial wafer and preparation method thereof
CN101859703A (en) Low turn-on voltage diode and preparation method thereof
CN103594579A (en) Epitaxial structure of nitride light emitting diode
WO2023159192A3 (en) Methods and structures to improve the performance of iii-nitride tunnel junctions
CN204651339U (en) A kind of light-emitting diode with superlattice hole injection layer structure
CN108550668A (en) A kind of LED epitaxial slice and preparation method thereof
Myllynen et al. Current spreading in back-contacted GaInP/GaAs light-emitting diodes
KR101357254B1 (en) Semiconductor light generating device
CN203850327U (en) GaN based LED epitaxial wafer with two-dimensional electron gas structure electron emission layer
Devi et al. Droop improvement in InGaN/GaN light-emitting diodes by polarization doping of quantum wells and electron blocking layer
Das et al. Performance Enhancement of AlInGaN Quantum Well based UV-LED
CN110600595A (en) Aluminum gallium nitrogen-based ultraviolet LED epitaxial structure and ultraviolet LED lamp
Venter et al. Nanoscale SOI silicon light source design for improved efficiency
Das et al. Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED
CN102412151A (en) Method for manufacturing super junction double-surface trench insulated gate bipolar translator (IGBT) device
CN203351641U (en) Effective opto-electronic device with multi-active regions
Das et al. Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23757128

Country of ref document: EP

Kind code of ref document: A2