WO2023157548A1 - Dispositif et procédé de mesure de tension - Google Patents

Dispositif et procédé de mesure de tension Download PDF

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Publication number
WO2023157548A1
WO2023157548A1 PCT/JP2023/001471 JP2023001471W WO2023157548A1 WO 2023157548 A1 WO2023157548 A1 WO 2023157548A1 JP 2023001471 W JP2023001471 W JP 2023001471W WO 2023157548 A1 WO2023157548 A1 WO 2023157548A1
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Prior art keywords
voltage
measured
temperature
measuring device
conversion
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PCT/JP2023/001471
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English (en)
Japanese (ja)
Inventor
広基 遠藤
英俊 片山
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2023157548A1 publication Critical patent/WO2023157548A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Definitions

  • the present disclosure relates to a voltage measuring device and a voltage measuring method.
  • the measurement voltage is measured by dividing the resistance voltage of a resistor ladder circuit in which resistors are connected in series.
  • the resistance ratio of each resistor in the resistor ladder circuit changes when the temperature changes. As a result, the measurement accuracy of the voltage measured by the voltage measuring device may be degraded.
  • the present disclosure provides a voltage measuring device and a voltage measuring method capable of suppressing deterioration in measurement accuracy due to temperature changes.
  • a resistor ladder circuit in which a plurality of resistors are connected in series; a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value; a processing unit that corrects the digital value according to the measured temperature;
  • a voltage measurement device comprising:
  • the processing unit is a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value; a correction unit that corrects the first measured voltage according to the measured temperature; may have
  • the correction coefficient may be a coefficient that brings the first measured voltage when the temperature of the resistance ladder circuit is changed closer to the first measured voltage at a predetermined temperature.
  • the correction unit may perform the correction based on at least one of the formula stored in the storage unit and the conversion table.
  • the storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table,
  • the calculation unit may perform the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
  • the first synchronization signal and the second synchronization signal may have different frame rates.
  • the processing unit is A first measured voltage obtained by a predetermined voltage conversion calculation process may be corrected with respect to the digital value according to the measured temperature.
  • the divided voltage may be a voltage between the reference voltage of the resistor ladder circuit and a predetermined connection point of the plurality of resistors.
  • the divided voltage may be a voltage between a predetermined first connection point and a second connection point of the plurality of resistors.
  • a temperature sensor for measuring the measured temperature may be further provided.
  • a voltage measurement method comprising:
  • the step of generating a voltage conversion equation that associates the plurality of digital values with the plurality of known measured voltages may be further included.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correcting step of correcting the first measured voltage according to the measured temperature.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correcting step of correcting the first measured voltage according to a correction factor corresponding to the measured temperature.
  • FIG. 1 is a block diagram showing a configuration example of a voltage measuring device according to a first embodiment
  • FIG. FIG. 4 is a diagram showing a configuration example of a resistance ladder circuit of a voltage sensor and an AD converter
  • FIG. 4 is a diagram showing the relationship between the reference voltage and the output voltage of the AD converter
  • FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio of a resistance ladder circuit, temperature, and measured voltage
  • FIG. 4 is a diagram showing the temperature characteristics of the output voltage of the resistor ladder circuit
  • FIG. 10 is a diagram showing a calculated value before correction calculated by a calculating unit with respect to a measured voltage of a terminal
  • FIG. 4 is a diagram schematically showing an example of correction calculation by a correction unit using a correction coefficient
  • FIG. 5 is a diagram showing an example of linear approximation of calculated values before correction calculated by a calculation unit;
  • FIG. 10 is a diagram showing an approximate measured voltage when the approximate voltage is multiplied by a correction factor; 4 is a flowchart showing an example of processing for generating a voltage conversion formula; 4 is a flowchart showing an example of correction coefficient generation processing; 4 is a flow chart showing an example of voltage measurement processing after calibration.
  • FIG. 2 is a block diagram showing a configuration example of a voltage measuring device according to Modification 1 of the first embodiment;
  • FIG. 5 is a diagram showing a configuration example of a resistor ladder circuit 1 and an AD converter according to a second embodiment;
  • FIG. 4 is a diagram showing resistance ratios of a resistance ladder circuit;
  • FIG. 4 is a diagram showing an example of temperature characteristics of voltage;
  • FIG. 4 is a diagram showing an example of temperature characteristics of voltage;
  • Embodiments of a voltage measuring device and a voltage measuring method will be described below with reference to the drawings.
  • the main components of the voltage measurement device will be mainly described below, the voltage measurement device may have components and functions that are not illustrated or described. The following description does not exclude components or features not shown or described.
  • FIG. 1 is a block diagram showing a configuration example of a voltage measuring device 1 according to a first embodiment of the present technology.
  • This voltage measuring device is a device capable of temperature correction and can be configured as an integrated circuit on a semiconductor substrate.
  • the voltage measuring device 1 includes, for example, a CPU (Central Processing Unit), and includes a temperature sensor 10 , a storage section 20 , a voltage sensor 30 and a correction section 40 .
  • a CPU Central Processing Unit
  • terminals O10 to O22 are also illustrated.
  • a measurement voltage VDDX is input to the terminal O10, and a reference voltage Vref is input to the terminal O12.
  • the control signal S0 is input to the terminal O14.
  • a measurement voltage Vte having temperature dependence is input to the terminal O16, and a reference voltage Vref is input to the terminal O18.
  • a corrected voltage VDDZ obtained by correcting the measured voltage VDDX is output from the terminal O20, and the measured temperature Te is output from the terminal O22.
  • the temperature sensor 10 is a sensor based on the reference voltage Vref input from the terminal O18.
  • a measurement voltage Vte having temperature dependence is input to the voltage sensor 30 from a terminal O16.
  • This measurement voltage Vte is, for example, the forward voltage of a diode provided to allow a predetermined current to flow. Since the measured voltage Vte, which is the forward voltage of the diode, varies with temperature, the temperature sensor 10 can detect the temperature Te according to the measured voltage Vte.
  • a circuit such as a diode that allows a predetermined current to flow may be configured within the temperature sensor 10 .
  • the storage unit 20 includes at least one of a nonvolatile storage medium and a volatile storage medium, and is capable of storing data and programs.
  • the storage unit 20 is used, for example, as EEPROM (Electrically Erasable Programmable Read Only Memory) and RAM (Random Access Memory).
  • the storage unit 20 stores various information such as the voltage sensor 30 and the arithmetic expression Eq10 and the correction coefficient Tab20 required for the calculation of the correction unit 40 .
  • the voltage sensor 30 is a voltage sensor with a calibration function.
  • This voltage sensor 30 has a resistor ladder circuit 100 , an AD converter 102 and a calculator 104 .
  • the correction unit 40 and the calculation unit 104 according to this embodiment constitute the processing unit 50 . That is, in the present embodiment, the calculation unit 104 is configured inside the voltage sensor 30 and the correction unit 40 is configured outside the voltage sensor 30, but the present invention is not limited to this.
  • the correction unit 40 may be integrated with the calculation unit 104 inside the voltage sensor 30 .
  • the calculation unit 104 may be integrated with the correction unit 40 outside the voltage sensor 30.
  • FIG. 2 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 of the voltage sensor 30.
  • the resistor ladder circuit 100 has a plurality of resistors 100a and switching elements 100b.
  • a plurality of resistors 100a and switching elements 100b are connected in series between the terminal O10 and the voltage VSS line.
  • the switching element 100b is, for example, a transistor, and becomes conductive or non-conductive according to the control signal S0.
  • a node n1 of the plurality of resistors 100a and the AD converter 102 are connected.
  • the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this.
  • the calculation unit 104 may generate the control signal SO for controlling each circuit.
  • the switching element 100b when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are The voltage is divided by the resistors 100 a of the resistor ladder circuit 100 and the divided voltage Vsense is supplied to the AD converter 102 .
  • the AD converter 102 analog-to-digital converts the divided voltage Vsense to generate a voltage Vad.
  • AD converter 102 is connected to calculator 104 .
  • the calculation unit 104 converts the output voltage Vad of the AD converter 102 into the measurement voltage VDDXa by, for example, the voltage conversion formula Eq10.
  • the voltage conversion equation Eq10 will be described with reference to FIG. Note that VDDXa according to the present embodiment corresponds to the first measurement voltage.
  • FIG. 3 is a diagram showing the relationship between the reference voltage Vref and the output voltage Vad of the AD converter 102.
  • FIG. The horizontal axis indicates the reference voltage Vref during calibration, and the vertical axis indicates the output voltage Vad of the AD converter 102 when the reference voltage Vref is input.
  • the reference voltage Vref means a voltage whose correct value is known in advance.
  • a line Lab20 is a characteristic line showing the relationship between the reference voltage Vref and the output voltage Vad. This line Lab20 is, for example, the characteristic at a predetermined temperature (for example, 20 degrees or 40 degrees).
  • the characteristic line Lab20 is between the output voltage VDDA of the AD converter 102 when the reference voltage VA is input to the terminal O10 and the output voltage VDDB of the AD converter 102 when the reference voltage VB is input to the terminal O10. characterize.
  • the characteristic line Lab20 is linear. That is, when there is no temperature change, the output voltage Vad changes linearly with respect to changes in the reference voltage Vref.
  • This linear characteristic Lab20 becomes, for example, the formula (1).
  • the equation (1) calculated in advance in this manner is stored in the storage unit 20 as the voltage conversion equation Eq10.
  • This calculation unit 104 converts the output voltage Vad of the AD converter 102 into VDDXa, for example, according to Eq10.
  • the calculation unit 104 may calculate the formula (1) in advance within the range of the measured voltage and store it in the storage unit 20 as a table.
  • the calculation unit 104 can calculate VDDXa according to the table stored in the storage unit 30 . Note that when the linearity of the linear characteristic Lab20 is completely established, VDDXa has the same value as VDDX.
  • FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio A:B of the resistance ladder circuit 100, temperature, and measured voltage.
  • the resistance ratio A:B changes as the temperature changes from TVDD1 to TVDD3.
  • the measured voltage drops from VDD1 to VDD3.
  • the temperature change of the resistance ratio A:B is considered to be the effect of the parasitic capacitance of the resistance 100a of the resistance ladder circuit 100 and the parasitic resistance.
  • FIG. 5 is a diagram showing temperature characteristics Lab10a and b of the output voltage Vsense of the resistance ladder circuit 100.
  • a linear characteristic Lab10a at a low temperature TVDD1 and a linear characteristic Lab10b at a temperature TVDD2 higher than that at a low temperature are shown.
  • the horizontal axis indicates the measured voltage VDDX, and the vertical axis indicates the output voltage Vad of the AD converter 102 .
  • the output voltage Vad in FIG. 5 corresponds to the output characteristics of the output voltage Vsense of the resistance ladder circuit 100.
  • the resistance ratio A:B of each resistor in the resistance ladder circuit 100 changes when the temperature changes due to, for example, parasitic resistances having different temperature coefficients. put away.
  • the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature rises. Therefore, when the temperature rises after calculating the equation (1) according to the temperature characteristic Lab 10a at a low temperature and then converting to the temperature characteristic Lab 10b, the measured voltage VDD1 is calculated as a lower value VDD2 than the actual value. be done. Similarly, when the temperature TVDD3 becomes even higher, the measured voltage VDD1 is calculated as a further lower value VDD3.
  • the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature increases, the present invention is not limited to this. For example, the output voltage Vsense of resistor ladder circuit 100 may increase as the temperature increases.
  • FIG. 6 is a diagram showing the calculated value V10 before correction calculated by the calculating unit 104 for the measured voltage VDD1 of the terminal V10.
  • the horizontal axis indicates the temperature, and the vertical axis indicates the calculated value V10. In this way, as the temperature rises, the calculated value will decrease unless corrected.
  • the correction unit 40 further performs correction calculation according to the temperature when the temperature characteristics Lab10a, b of the output voltage Vsense change. For example, when the voltage conversion formula Eq10 is calculated when the temperature is TVDD1, in the example of FIG. 5, the measured voltage VDD2 is increased by a correction coefficient according to the temperature TVDD2, and the calculation is performed so that it becomes VDD1. More specifically, the correction calculation shown in FIG. 7 is performed.
  • FIG. 7 is a diagram schematically showing an example of correction calculation by the correction unit 40 using correction coefficients.
  • the figure shows the correction coefficient Tab20.
  • the horizontal axis indicates the temperature, and the vertical axis indicates the value of the correction coefficient.
  • this correction coefficient Tab20 shows an example of a correction coefficient for correcting the voltage conversion formula Eq10 (see formula (1)) calculated when the temperature is 20 degrees, for example.
  • (b) is a diagram showing a voltage example obtained by linearly approximating the measured voltage VDD1.
  • the horizontal axis indicates temperature and the vertical axis indicates voltage.
  • a line LV10a indicates the temperature change of the measured voltage VDD1.
  • FIG. (c) is a diagram linearly showing an example in which the measurement voltage VDD1 is temperature-corrected by the calculation unit 104.
  • FIG. A line LV10b linearly indicates an example of temperature correction of the measured voltage VDD1.
  • a correction coefficient Tab20 indicates an example of a correction coefficient for correcting equation (1) calculated when the temperature is 20 degrees, for example. The vertical axis indicates the correction coefficient, and the horizontal axis indicates the temperature.
  • the correction unit 40 multiplies the output voltage Vad of the AD converter 102 by the correction coefficient Tab20 (see formula (3) described later) so as to suppress the temperature change of the output voltage Vsense.
  • the correcting unit 40 corrects the measured voltage VDDXa calculated by the calculating unit 104 based on the correction coefficient Tab20(Te) corresponding to the measured temperature Te.
  • FIG. 8 is a diagram showing an example of linear approximation of the pre-correction calculated value V10 calculated by the calculator 104.
  • FIG. 8A is a diagram showing calculated value V10 before correction calculated by calculation unit 104 using voltage conversion formula Eq10 (see formula (1)).
  • FIG. 8(b) is a diagram showing a calculated value LV10a obtained by linearly approximating the calculated value V10.
  • the vertical axis indicates temperature and the horizontal axis indicates measured voltage.
  • the calculation unit 104 approximates the pre-correction calculated value V10 using a more linear formula such as the least-squares method.
  • the linear expression for the measured temperature Te can be represented by, for example, equation (2).
  • the coefficient K1 is the value of the cross section at a temperature of 0 degrees, and the coefficient K2 is the slope.
  • the actual calculated value V10 (see FIG. 8) has a value slightly deviated from linearity, the temperature fluctuation is suppressed by multiplying the calculated value V10 by the correction coefficient Tab20(T). In this way, once the temperature characteristic of the resistance ladder circuit 100 of the voltage measuring device 1 is measured, it is almost unchanged. It becomes possible to calculate the correction coefficient in accordance with the measured temperature Te when the is generated.
  • FIG. 10 is a flow chart showing an example of processing for generating the voltage conversion equation Eq10 (see equation (1)).
  • the case where the reference voltages VA and VB (see FIG. 3) are supplied according to the control signal S0 of the external control device will be described.
  • an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
  • the calculation unit 104 inputs a known reference voltage Vref (see FIG. 3) from the terminal O10 (step S100), and the output voltage Vad of the AD converter 102 (for example, VDDA) and a reference voltage Vref (for example, VA) are associated and stored in the storage unit 20 (step S101).
  • Vref known reference voltage
  • VA reference voltage
  • the calculation unit 104 determines whether or not a predetermined number of voltages (eg VA, VB) have been input (S102). If it is determined that the number is not the predetermined number (NO in S102), the reference voltage Vref (for example, VB) is changed according to the operation instruction of the control signal S0, and the process from step S100 is repeated.
  • a predetermined number of voltages eg VA, VB
  • Vref for example, VB
  • the calculation unit 104 uses the output voltage Vad (for example, VDDA, VDDB) and the reference voltage Vref (for example, VA, VB) stored in the storage unit 20 to A voltage conversion formula Eq10 (see formula (1)) is calculated.
  • the calculation unit 104 associates the measured temperature Te (for example, 20 degrees) with the voltage conversion equation Eq10 and stores them in the storage unit 20 .
  • the calculator 104 can calculate the voltage conversion equation Eq10 associated with the measured temperature Te (eg, 20 degrees).
  • FIG. 11 is a flow chart showing an example of processing for generating correction coefficients (see formula (3)).
  • the case where the voltage measuring device 1 is arranged in the temperature control device and controlled according to the control signal S0 of the external control device will be described.
  • an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
  • the calculation unit 104 when changing the temperature, according to the operation instruction of the control signal S0, the calculation unit 104 inputs a specific measurement voltage VDDX (for example, VDD1) (step S200), converts the output voltage Vad of the AD converter 102 into a voltage conversion formula Using Eq10, an operation is performed to convert to the measured voltage VDDXa (step S201). Subsequently, the calculation unit 104 associates the measured voltage VDDXa with the measured temperature Te, and stores them in the storage unit 20 (step S202).
  • VDDX for example, VDD1
  • VDD1 voltage conversion formula
  • Eq10 an operation is performed to convert to the measured voltage VDDXa
  • the calculation unit 104 associates the measured voltage VDDXa with the measured temperature Te, and stores them in the storage unit 20 (step S202).
  • the calculation unit 104 determines whether or not calculations have been performed for a predetermined number of measured temperatures Te (step S203). If it is determined that the number is not the predetermined number (NO in S203), the voltage measuring device 1 is changed to a different temperature (step S204) according to the operation instruction of the control signal S0, and the process from step S200 is repeated.
  • the calculation unit 104 determines that the number is equal to the predetermined number (YES in S203)
  • the calculation unit 104 uses the measured voltage VDDXa and the measured temperature Te stored in the storage unit 20 to obtain a voltage linear approximation formula (formula (2)). is calculated (step S205). At this time, the calculation unit 104 stores the linear approximation formula (formula (2)) in the storage unit 20 .
  • calculation unit 104 uses the linear approximation formula (formula (2)) and the measured temperature Te (for example, 20 degrees) associated with the voltage conversion formula Eq10 to calculate the correction coefficient Tab20(Te) (formula (3) ) is calculated and stored in the storage unit 20 in association with the voltage conversion equation Eq10.
  • calculation unit 104 can calculate correction coefficient Tab20(Te) associated with voltage conversion equation Eq10.
  • FIG. 12 is a flow chart showing an example of voltage measurement processing after the end of calibration. As shown in FIG. 12, first, the measurement voltage VDDX is input to the resistance ladder circuit 100 from the terminal O10 (step S300).
  • the resistance ladder circuit 100 divides the measurement voltage VDDX and supplies the divided voltage Vsense to the AD converter 102 (step S301). Subsequently, the AD converter 102 supplies the voltage Vad obtained by AD-converting the divided voltage Vsense to the calculation unit 104 (step S302).
  • the calculator 104 converts the voltage Vad into the measured voltage VDDXa according to the voltage conversion formula Eq10, and supplies it to the corrector 40 (step S303).
  • the correction unit 40 acquires the measured temperature Te from the temperature sensor 10 (step S304), multiplies the measured voltage VDDXa by the correction factor Tab20(Te) corresponding to the measured temperature Te, and obtains the temperature-corrected corrected voltage VDDZ. is output from the terminal O20 to the register (step S305).
  • the temperature sensor 10 also outputs the measured temperature Te from the terminal O22 to the register.
  • the correction unit 40 multiplies the measured voltage VDDXa by the correction coefficient Tab20(Te) corresponding to the measured temperature Te to generate the temperature-corrected correction voltage VDDZ.
  • the resistance ratio A:B of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
  • the voltage measuring device 1 according to Modification 1 of the first embodiment is such that the processing unit 50 can perform the processing of the correcting unit 40 and the calculating unit 104 at the same time. differ from Differences from the voltage measuring device 1 according to the first embodiment will be described below.
  • FIG. 13 is a block diagram showing a configuration example of the voltage measuring device 1 according to Modification 1 of the first embodiment. It is different from the voltage measuring device 1 according to the first embodiment in that the processing section 50 is configured inside the voltage sensor 30 .
  • the processing unit 50 can simultaneously perform the processes of formulas (1) and (3) according to, for example, formula (4).
  • the processing unit 50 generates the corrected voltage VDDXZ by temperature-correcting the output voltage Vad according to the measured temperature Te and the output voltage Vad of the AD converter 102 based on the measured temperature Te and the output voltage Vad of the AD converter 102. I decided to As a result, the configuration of the processing unit 50 can be simplified, and the processing speed can be increased.
  • the voltage measuring device 1 according to the second embodiment differs from the table voltage measuring device 1 according to the first embodiment in that the voltage to be measured is measured using the divided voltage between two nodes of the resistance ladder circuit 100 . Differences from the voltage measuring device 1 according to the first embodiment will be described below.
  • FIG. 14 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 according to the second embodiment. As shown in FIG. 14, the resistance ladder circuit 100 according to the second embodiment further has a switching element 100c.
  • the switching element 100c is a transistor, for example, and switches the connection between the node n1 and the node n2 according to the control signal S0.
  • the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this.
  • the calculation unit 104 may generate the control signal SO for controlling each circuit.
  • the switching element 100b when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are The voltage is divided by the resistor 100 a of the resistor ladder circuit 100 .
  • the voltage VD1 is output from the node n1
  • the voltage VD2 is output from the node n2.
  • AD converter 102 converts voltage VD1 to voltage Vad1.
  • AD converter 102 converts voltage VD2 to voltage Vad2.
  • FIG. 15 is a diagram showing the resistance ratio A:B:C of the resistance ladder circuit 100.
  • the resistance ratio A:B:C changes to A':B':C'.
  • the voltages VD1 and VD2 also change to voltages VD1' and VD2'.
  • the rate of change R (equation 5) of the resistance ladder output when changing from -40 degrees to 125 degrees is the same value even if VDDX is different.
  • FIG. 16 is a diagram showing an example of temperature characteristics of voltages Vad1 and Vad2.
  • (a) is a diagram showing linear approximation characteristics of voltages Vad1 and Vad2.
  • the horizontal axis indicates temperature, and the vertical axis indicates the output voltage of AD converter 102 .
  • a line LV40a (Te) is a characteristic linearly approximating the temperature change of the voltage Vad1.
  • the line LV40b (Te) is a characteristic linearly approximating the temperature change of the voltage Vad2.
  • temperature changes in the output voltages of nodes n1 and n2 can be linearly approximated as shown in equations (6) and (7).
  • K40a and K40b are intercept values when the measured temperature Te is 0 degrees, and K42a and K42b are slopes.
  • (b) is a diagram showing a correction coefficient Tab401 for the linear approximation line LV40a (Te) and a correction coefficient Tab402 for the linear approximation line LV40b (Te).
  • Correction coefficients Tab401 and Tab402 can be calculated as shown in equations (8) and (9), like equation (3) in the first embodiment.
  • the differential voltage Vad3 Vad1 ⁇ Vad2 between the voltage Vad1 and the voltage Vad2 can be temperature corrected by the correction coefficients Tab401 and Tab402. Therefore, in the present embodiment, the voltage conversion equation Eq300 is generated as equation (10) for Vad3 in the same manner as equation (1).
  • VA40 is the voltage Vad3 when the voltage VDDA is supplied to the terminal O10
  • VB40 is the voltage Vad3 when the voltage VDDB is supplied to the terminal O10.
  • FIG. 17 is a diagram showing an example of temperature characteristics of the voltage Vad3.
  • (a) is a diagram showing a linear approximation characteristic of the voltage Vad3.
  • the horizontal axis indicates temperature, and the vertical axis indicates differential voltage Vad3 based on the output of AD converter 102 .
  • a line LV300 (Te) is a characteristic linearly approximating the temperature change of the voltage Vad3.
  • the temperature change of the differential voltage between the output voltages of the nodes n1 and n2 can be linearly approximated as shown in the equation (11). Referring to equations (6) and (7), for example, K300a corresponds to (K40a-K40b) and K300b corresponds to (K42a-K42b).
  • the calculation unit 104 measures the divided voltage Vad3 between the node n1 and the node n2 of the resistance ladder circuit 100 using the voltage conversion formula Eq300 (see formula 10).
  • the voltage measurement voltage VDDXa is generated, and the correction unit 40 corrects the measurement voltage VDDXa with the correction coefficient Tab300(Te) of the equation (11) using the measurement temperature Te to generate the correction voltage VDDZ.
  • the resistance ratio A:B:C of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
  • this technique can take the following structures.
  • a resistor ladder circuit in which a plurality of resistors are connected in series; a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value; a processing unit that corrects the digital value according to the measured temperature; A voltage measuring device.
  • the processing unit is a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value; a correction unit that corrects the first measured voltage according to the measured temperature;
  • the voltage measuring device comprising:
  • the storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table, The voltage measurement device according to (5), wherein the calculation unit performs the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
  • the processing unit is The voltage measuring device according to (1), wherein a first measured voltage obtained by a predetermined voltage conversion calculation process is corrected for the digital value according to the measured temperature.
  • a voltage measurement method comprising:
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correction step of correcting the first measured voltage according to the measured temperature.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correction step of correcting the first measured voltage according to a correction coefficient corresponding to the measured temperature.

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  • Measurement Of Current Or Voltage (AREA)

Abstract

Le problème décrit par la présente divulgation est de fournir un procédé et un dispositif de mesure de tension permettant de supprimer des diminutions de précision de mesure provoquées par des changements de température. La solution selon la présente divulgation concerne un dispositif de mesure de tension comprenant : un circuit d'échelle de résistance dans lequel une pluralité de résistances est connectée en série ; une unité de conversion qui convertit, en une valeur numérique, une tension divisée qui a été divisée par le circuit d'échelle de résistance ; et une unité de traitement qui corrige la valeur numérique en fonction de la température mesurée.
PCT/JP2023/001471 2022-02-17 2023-01-19 Dispositif et procédé de mesure de tension WO2023157548A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289037A (ja) * 1997-04-11 1998-10-27 Matsushita Electric Ind Co Ltd 電池電圧監視装置およびワイヤレスプリンター
US20160274149A1 (en) * 2012-11-16 2016-09-22 Alstom Technology Ltd. Very high-voltage dc line voltage sensor
CN211955635U (zh) * 2019-12-12 2020-11-17 联合汽车电子有限公司 一种直流母线电压检测电路、逆变器和电动汽车

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289037A (ja) * 1997-04-11 1998-10-27 Matsushita Electric Ind Co Ltd 電池電圧監視装置およびワイヤレスプリンター
US20160274149A1 (en) * 2012-11-16 2016-09-22 Alstom Technology Ltd. Very high-voltage dc line voltage sensor
CN211955635U (zh) * 2019-12-12 2020-11-17 联合汽车电子有限公司 一种直流母线电压检测电路、逆变器和电动汽车

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