WO2023157548A1 - Voltage measurement device and voltage measurement method - Google Patents

Voltage measurement device and voltage measurement method Download PDF

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Publication number
WO2023157548A1
WO2023157548A1 PCT/JP2023/001471 JP2023001471W WO2023157548A1 WO 2023157548 A1 WO2023157548 A1 WO 2023157548A1 JP 2023001471 W JP2023001471 W JP 2023001471W WO 2023157548 A1 WO2023157548 A1 WO 2023157548A1
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Prior art keywords
voltage
measured
temperature
measuring device
conversion
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PCT/JP2023/001471
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French (fr)
Japanese (ja)
Inventor
広基 遠藤
英俊 片山
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2023157548A1 publication Critical patent/WO2023157548A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/32—Compensating for temperature change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Definitions

  • the present disclosure relates to a voltage measuring device and a voltage measuring method.
  • the measurement voltage is measured by dividing the resistance voltage of a resistor ladder circuit in which resistors are connected in series.
  • the resistance ratio of each resistor in the resistor ladder circuit changes when the temperature changes. As a result, the measurement accuracy of the voltage measured by the voltage measuring device may be degraded.
  • the present disclosure provides a voltage measuring device and a voltage measuring method capable of suppressing deterioration in measurement accuracy due to temperature changes.
  • a resistor ladder circuit in which a plurality of resistors are connected in series; a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value; a processing unit that corrects the digital value according to the measured temperature;
  • a voltage measurement device comprising:
  • the processing unit is a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value; a correction unit that corrects the first measured voltage according to the measured temperature; may have
  • the correction coefficient may be a coefficient that brings the first measured voltage when the temperature of the resistance ladder circuit is changed closer to the first measured voltage at a predetermined temperature.
  • the correction unit may perform the correction based on at least one of the formula stored in the storage unit and the conversion table.
  • the storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table,
  • the calculation unit may perform the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
  • the first synchronization signal and the second synchronization signal may have different frame rates.
  • the processing unit is A first measured voltage obtained by a predetermined voltage conversion calculation process may be corrected with respect to the digital value according to the measured temperature.
  • the divided voltage may be a voltage between the reference voltage of the resistor ladder circuit and a predetermined connection point of the plurality of resistors.
  • the divided voltage may be a voltage between a predetermined first connection point and a second connection point of the plurality of resistors.
  • a temperature sensor for measuring the measured temperature may be further provided.
  • a voltage measurement method comprising:
  • the step of generating a voltage conversion equation that associates the plurality of digital values with the plurality of known measured voltages may be further included.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correcting step of correcting the first measured voltage according to the measured temperature.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correcting step of correcting the first measured voltage according to a correction factor corresponding to the measured temperature.
  • FIG. 1 is a block diagram showing a configuration example of a voltage measuring device according to a first embodiment
  • FIG. FIG. 4 is a diagram showing a configuration example of a resistance ladder circuit of a voltage sensor and an AD converter
  • FIG. 4 is a diagram showing the relationship between the reference voltage and the output voltage of the AD converter
  • FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio of a resistance ladder circuit, temperature, and measured voltage
  • FIG. 4 is a diagram showing the temperature characteristics of the output voltage of the resistor ladder circuit
  • FIG. 10 is a diagram showing a calculated value before correction calculated by a calculating unit with respect to a measured voltage of a terminal
  • FIG. 4 is a diagram schematically showing an example of correction calculation by a correction unit using a correction coefficient
  • FIG. 5 is a diagram showing an example of linear approximation of calculated values before correction calculated by a calculation unit;
  • FIG. 10 is a diagram showing an approximate measured voltage when the approximate voltage is multiplied by a correction factor; 4 is a flowchart showing an example of processing for generating a voltage conversion formula; 4 is a flowchart showing an example of correction coefficient generation processing; 4 is a flow chart showing an example of voltage measurement processing after calibration.
  • FIG. 2 is a block diagram showing a configuration example of a voltage measuring device according to Modification 1 of the first embodiment;
  • FIG. 5 is a diagram showing a configuration example of a resistor ladder circuit 1 and an AD converter according to a second embodiment;
  • FIG. 4 is a diagram showing resistance ratios of a resistance ladder circuit;
  • FIG. 4 is a diagram showing an example of temperature characteristics of voltage;
  • FIG. 4 is a diagram showing an example of temperature characteristics of voltage;
  • Embodiments of a voltage measuring device and a voltage measuring method will be described below with reference to the drawings.
  • the main components of the voltage measurement device will be mainly described below, the voltage measurement device may have components and functions that are not illustrated or described. The following description does not exclude components or features not shown or described.
  • FIG. 1 is a block diagram showing a configuration example of a voltage measuring device 1 according to a first embodiment of the present technology.
  • This voltage measuring device is a device capable of temperature correction and can be configured as an integrated circuit on a semiconductor substrate.
  • the voltage measuring device 1 includes, for example, a CPU (Central Processing Unit), and includes a temperature sensor 10 , a storage section 20 , a voltage sensor 30 and a correction section 40 .
  • a CPU Central Processing Unit
  • terminals O10 to O22 are also illustrated.
  • a measurement voltage VDDX is input to the terminal O10, and a reference voltage Vref is input to the terminal O12.
  • the control signal S0 is input to the terminal O14.
  • a measurement voltage Vte having temperature dependence is input to the terminal O16, and a reference voltage Vref is input to the terminal O18.
  • a corrected voltage VDDZ obtained by correcting the measured voltage VDDX is output from the terminal O20, and the measured temperature Te is output from the terminal O22.
  • the temperature sensor 10 is a sensor based on the reference voltage Vref input from the terminal O18.
  • a measurement voltage Vte having temperature dependence is input to the voltage sensor 30 from a terminal O16.
  • This measurement voltage Vte is, for example, the forward voltage of a diode provided to allow a predetermined current to flow. Since the measured voltage Vte, which is the forward voltage of the diode, varies with temperature, the temperature sensor 10 can detect the temperature Te according to the measured voltage Vte.
  • a circuit such as a diode that allows a predetermined current to flow may be configured within the temperature sensor 10 .
  • the storage unit 20 includes at least one of a nonvolatile storage medium and a volatile storage medium, and is capable of storing data and programs.
  • the storage unit 20 is used, for example, as EEPROM (Electrically Erasable Programmable Read Only Memory) and RAM (Random Access Memory).
  • the storage unit 20 stores various information such as the voltage sensor 30 and the arithmetic expression Eq10 and the correction coefficient Tab20 required for the calculation of the correction unit 40 .
  • the voltage sensor 30 is a voltage sensor with a calibration function.
  • This voltage sensor 30 has a resistor ladder circuit 100 , an AD converter 102 and a calculator 104 .
  • the correction unit 40 and the calculation unit 104 according to this embodiment constitute the processing unit 50 . That is, in the present embodiment, the calculation unit 104 is configured inside the voltage sensor 30 and the correction unit 40 is configured outside the voltage sensor 30, but the present invention is not limited to this.
  • the correction unit 40 may be integrated with the calculation unit 104 inside the voltage sensor 30 .
  • the calculation unit 104 may be integrated with the correction unit 40 outside the voltage sensor 30.
  • FIG. 2 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 of the voltage sensor 30.
  • the resistor ladder circuit 100 has a plurality of resistors 100a and switching elements 100b.
  • a plurality of resistors 100a and switching elements 100b are connected in series between the terminal O10 and the voltage VSS line.
  • the switching element 100b is, for example, a transistor, and becomes conductive or non-conductive according to the control signal S0.
  • a node n1 of the plurality of resistors 100a and the AD converter 102 are connected.
  • the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this.
  • the calculation unit 104 may generate the control signal SO for controlling each circuit.
  • the switching element 100b when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are The voltage is divided by the resistors 100 a of the resistor ladder circuit 100 and the divided voltage Vsense is supplied to the AD converter 102 .
  • the AD converter 102 analog-to-digital converts the divided voltage Vsense to generate a voltage Vad.
  • AD converter 102 is connected to calculator 104 .
  • the calculation unit 104 converts the output voltage Vad of the AD converter 102 into the measurement voltage VDDXa by, for example, the voltage conversion formula Eq10.
  • the voltage conversion equation Eq10 will be described with reference to FIG. Note that VDDXa according to the present embodiment corresponds to the first measurement voltage.
  • FIG. 3 is a diagram showing the relationship between the reference voltage Vref and the output voltage Vad of the AD converter 102.
  • FIG. The horizontal axis indicates the reference voltage Vref during calibration, and the vertical axis indicates the output voltage Vad of the AD converter 102 when the reference voltage Vref is input.
  • the reference voltage Vref means a voltage whose correct value is known in advance.
  • a line Lab20 is a characteristic line showing the relationship between the reference voltage Vref and the output voltage Vad. This line Lab20 is, for example, the characteristic at a predetermined temperature (for example, 20 degrees or 40 degrees).
  • the characteristic line Lab20 is between the output voltage VDDA of the AD converter 102 when the reference voltage VA is input to the terminal O10 and the output voltage VDDB of the AD converter 102 when the reference voltage VB is input to the terminal O10. characterize.
  • the characteristic line Lab20 is linear. That is, when there is no temperature change, the output voltage Vad changes linearly with respect to changes in the reference voltage Vref.
  • This linear characteristic Lab20 becomes, for example, the formula (1).
  • the equation (1) calculated in advance in this manner is stored in the storage unit 20 as the voltage conversion equation Eq10.
  • This calculation unit 104 converts the output voltage Vad of the AD converter 102 into VDDXa, for example, according to Eq10.
  • the calculation unit 104 may calculate the formula (1) in advance within the range of the measured voltage and store it in the storage unit 20 as a table.
  • the calculation unit 104 can calculate VDDXa according to the table stored in the storage unit 30 . Note that when the linearity of the linear characteristic Lab20 is completely established, VDDXa has the same value as VDDX.
  • FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio A:B of the resistance ladder circuit 100, temperature, and measured voltage.
  • the resistance ratio A:B changes as the temperature changes from TVDD1 to TVDD3.
  • the measured voltage drops from VDD1 to VDD3.
  • the temperature change of the resistance ratio A:B is considered to be the effect of the parasitic capacitance of the resistance 100a of the resistance ladder circuit 100 and the parasitic resistance.
  • FIG. 5 is a diagram showing temperature characteristics Lab10a and b of the output voltage Vsense of the resistance ladder circuit 100.
  • a linear characteristic Lab10a at a low temperature TVDD1 and a linear characteristic Lab10b at a temperature TVDD2 higher than that at a low temperature are shown.
  • the horizontal axis indicates the measured voltage VDDX, and the vertical axis indicates the output voltage Vad of the AD converter 102 .
  • the output voltage Vad in FIG. 5 corresponds to the output characteristics of the output voltage Vsense of the resistance ladder circuit 100.
  • the resistance ratio A:B of each resistor in the resistance ladder circuit 100 changes when the temperature changes due to, for example, parasitic resistances having different temperature coefficients. put away.
  • the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature rises. Therefore, when the temperature rises after calculating the equation (1) according to the temperature characteristic Lab 10a at a low temperature and then converting to the temperature characteristic Lab 10b, the measured voltage VDD1 is calculated as a lower value VDD2 than the actual value. be done. Similarly, when the temperature TVDD3 becomes even higher, the measured voltage VDD1 is calculated as a further lower value VDD3.
  • the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature increases, the present invention is not limited to this. For example, the output voltage Vsense of resistor ladder circuit 100 may increase as the temperature increases.
  • FIG. 6 is a diagram showing the calculated value V10 before correction calculated by the calculating unit 104 for the measured voltage VDD1 of the terminal V10.
  • the horizontal axis indicates the temperature, and the vertical axis indicates the calculated value V10. In this way, as the temperature rises, the calculated value will decrease unless corrected.
  • the correction unit 40 further performs correction calculation according to the temperature when the temperature characteristics Lab10a, b of the output voltage Vsense change. For example, when the voltage conversion formula Eq10 is calculated when the temperature is TVDD1, in the example of FIG. 5, the measured voltage VDD2 is increased by a correction coefficient according to the temperature TVDD2, and the calculation is performed so that it becomes VDD1. More specifically, the correction calculation shown in FIG. 7 is performed.
  • FIG. 7 is a diagram schematically showing an example of correction calculation by the correction unit 40 using correction coefficients.
  • the figure shows the correction coefficient Tab20.
  • the horizontal axis indicates the temperature, and the vertical axis indicates the value of the correction coefficient.
  • this correction coefficient Tab20 shows an example of a correction coefficient for correcting the voltage conversion formula Eq10 (see formula (1)) calculated when the temperature is 20 degrees, for example.
  • (b) is a diagram showing a voltage example obtained by linearly approximating the measured voltage VDD1.
  • the horizontal axis indicates temperature and the vertical axis indicates voltage.
  • a line LV10a indicates the temperature change of the measured voltage VDD1.
  • FIG. (c) is a diagram linearly showing an example in which the measurement voltage VDD1 is temperature-corrected by the calculation unit 104.
  • FIG. A line LV10b linearly indicates an example of temperature correction of the measured voltage VDD1.
  • a correction coefficient Tab20 indicates an example of a correction coefficient for correcting equation (1) calculated when the temperature is 20 degrees, for example. The vertical axis indicates the correction coefficient, and the horizontal axis indicates the temperature.
  • the correction unit 40 multiplies the output voltage Vad of the AD converter 102 by the correction coefficient Tab20 (see formula (3) described later) so as to suppress the temperature change of the output voltage Vsense.
  • the correcting unit 40 corrects the measured voltage VDDXa calculated by the calculating unit 104 based on the correction coefficient Tab20(Te) corresponding to the measured temperature Te.
  • FIG. 8 is a diagram showing an example of linear approximation of the pre-correction calculated value V10 calculated by the calculator 104.
  • FIG. 8A is a diagram showing calculated value V10 before correction calculated by calculation unit 104 using voltage conversion formula Eq10 (see formula (1)).
  • FIG. 8(b) is a diagram showing a calculated value LV10a obtained by linearly approximating the calculated value V10.
  • the vertical axis indicates temperature and the horizontal axis indicates measured voltage.
  • the calculation unit 104 approximates the pre-correction calculated value V10 using a more linear formula such as the least-squares method.
  • the linear expression for the measured temperature Te can be represented by, for example, equation (2).
  • the coefficient K1 is the value of the cross section at a temperature of 0 degrees, and the coefficient K2 is the slope.
  • the actual calculated value V10 (see FIG. 8) has a value slightly deviated from linearity, the temperature fluctuation is suppressed by multiplying the calculated value V10 by the correction coefficient Tab20(T). In this way, once the temperature characteristic of the resistance ladder circuit 100 of the voltage measuring device 1 is measured, it is almost unchanged. It becomes possible to calculate the correction coefficient in accordance with the measured temperature Te when the is generated.
  • FIG. 10 is a flow chart showing an example of processing for generating the voltage conversion equation Eq10 (see equation (1)).
  • the case where the reference voltages VA and VB (see FIG. 3) are supplied according to the control signal S0 of the external control device will be described.
  • an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
  • the calculation unit 104 inputs a known reference voltage Vref (see FIG. 3) from the terminal O10 (step S100), and the output voltage Vad of the AD converter 102 (for example, VDDA) and a reference voltage Vref (for example, VA) are associated and stored in the storage unit 20 (step S101).
  • Vref known reference voltage
  • VA reference voltage
  • the calculation unit 104 determines whether or not a predetermined number of voltages (eg VA, VB) have been input (S102). If it is determined that the number is not the predetermined number (NO in S102), the reference voltage Vref (for example, VB) is changed according to the operation instruction of the control signal S0, and the process from step S100 is repeated.
  • a predetermined number of voltages eg VA, VB
  • Vref for example, VB
  • the calculation unit 104 uses the output voltage Vad (for example, VDDA, VDDB) and the reference voltage Vref (for example, VA, VB) stored in the storage unit 20 to A voltage conversion formula Eq10 (see formula (1)) is calculated.
  • the calculation unit 104 associates the measured temperature Te (for example, 20 degrees) with the voltage conversion equation Eq10 and stores them in the storage unit 20 .
  • the calculator 104 can calculate the voltage conversion equation Eq10 associated with the measured temperature Te (eg, 20 degrees).
  • FIG. 11 is a flow chart showing an example of processing for generating correction coefficients (see formula (3)).
  • the case where the voltage measuring device 1 is arranged in the temperature control device and controlled according to the control signal S0 of the external control device will be described.
  • an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
  • the calculation unit 104 when changing the temperature, according to the operation instruction of the control signal S0, the calculation unit 104 inputs a specific measurement voltage VDDX (for example, VDD1) (step S200), converts the output voltage Vad of the AD converter 102 into a voltage conversion formula Using Eq10, an operation is performed to convert to the measured voltage VDDXa (step S201). Subsequently, the calculation unit 104 associates the measured voltage VDDXa with the measured temperature Te, and stores them in the storage unit 20 (step S202).
  • VDDX for example, VDD1
  • VDD1 voltage conversion formula
  • Eq10 an operation is performed to convert to the measured voltage VDDXa
  • the calculation unit 104 associates the measured voltage VDDXa with the measured temperature Te, and stores them in the storage unit 20 (step S202).
  • the calculation unit 104 determines whether or not calculations have been performed for a predetermined number of measured temperatures Te (step S203). If it is determined that the number is not the predetermined number (NO in S203), the voltage measuring device 1 is changed to a different temperature (step S204) according to the operation instruction of the control signal S0, and the process from step S200 is repeated.
  • the calculation unit 104 determines that the number is equal to the predetermined number (YES in S203)
  • the calculation unit 104 uses the measured voltage VDDXa and the measured temperature Te stored in the storage unit 20 to obtain a voltage linear approximation formula (formula (2)). is calculated (step S205). At this time, the calculation unit 104 stores the linear approximation formula (formula (2)) in the storage unit 20 .
  • calculation unit 104 uses the linear approximation formula (formula (2)) and the measured temperature Te (for example, 20 degrees) associated with the voltage conversion formula Eq10 to calculate the correction coefficient Tab20(Te) (formula (3) ) is calculated and stored in the storage unit 20 in association with the voltage conversion equation Eq10.
  • calculation unit 104 can calculate correction coefficient Tab20(Te) associated with voltage conversion equation Eq10.
  • FIG. 12 is a flow chart showing an example of voltage measurement processing after the end of calibration. As shown in FIG. 12, first, the measurement voltage VDDX is input to the resistance ladder circuit 100 from the terminal O10 (step S300).
  • the resistance ladder circuit 100 divides the measurement voltage VDDX and supplies the divided voltage Vsense to the AD converter 102 (step S301). Subsequently, the AD converter 102 supplies the voltage Vad obtained by AD-converting the divided voltage Vsense to the calculation unit 104 (step S302).
  • the calculator 104 converts the voltage Vad into the measured voltage VDDXa according to the voltage conversion formula Eq10, and supplies it to the corrector 40 (step S303).
  • the correction unit 40 acquires the measured temperature Te from the temperature sensor 10 (step S304), multiplies the measured voltage VDDXa by the correction factor Tab20(Te) corresponding to the measured temperature Te, and obtains the temperature-corrected corrected voltage VDDZ. is output from the terminal O20 to the register (step S305).
  • the temperature sensor 10 also outputs the measured temperature Te from the terminal O22 to the register.
  • the correction unit 40 multiplies the measured voltage VDDXa by the correction coefficient Tab20(Te) corresponding to the measured temperature Te to generate the temperature-corrected correction voltage VDDZ.
  • the resistance ratio A:B of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
  • the voltage measuring device 1 according to Modification 1 of the first embodiment is such that the processing unit 50 can perform the processing of the correcting unit 40 and the calculating unit 104 at the same time. differ from Differences from the voltage measuring device 1 according to the first embodiment will be described below.
  • FIG. 13 is a block diagram showing a configuration example of the voltage measuring device 1 according to Modification 1 of the first embodiment. It is different from the voltage measuring device 1 according to the first embodiment in that the processing section 50 is configured inside the voltage sensor 30 .
  • the processing unit 50 can simultaneously perform the processes of formulas (1) and (3) according to, for example, formula (4).
  • the processing unit 50 generates the corrected voltage VDDXZ by temperature-correcting the output voltage Vad according to the measured temperature Te and the output voltage Vad of the AD converter 102 based on the measured temperature Te and the output voltage Vad of the AD converter 102. I decided to As a result, the configuration of the processing unit 50 can be simplified, and the processing speed can be increased.
  • the voltage measuring device 1 according to the second embodiment differs from the table voltage measuring device 1 according to the first embodiment in that the voltage to be measured is measured using the divided voltage between two nodes of the resistance ladder circuit 100 . Differences from the voltage measuring device 1 according to the first embodiment will be described below.
  • FIG. 14 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 according to the second embodiment. As shown in FIG. 14, the resistance ladder circuit 100 according to the second embodiment further has a switching element 100c.
  • the switching element 100c is a transistor, for example, and switches the connection between the node n1 and the node n2 according to the control signal S0.
  • the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this.
  • the calculation unit 104 may generate the control signal SO for controlling each circuit.
  • the switching element 100b when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are The voltage is divided by the resistor 100 a of the resistor ladder circuit 100 .
  • the voltage VD1 is output from the node n1
  • the voltage VD2 is output from the node n2.
  • AD converter 102 converts voltage VD1 to voltage Vad1.
  • AD converter 102 converts voltage VD2 to voltage Vad2.
  • FIG. 15 is a diagram showing the resistance ratio A:B:C of the resistance ladder circuit 100.
  • the resistance ratio A:B:C changes to A':B':C'.
  • the voltages VD1 and VD2 also change to voltages VD1' and VD2'.
  • the rate of change R (equation 5) of the resistance ladder output when changing from -40 degrees to 125 degrees is the same value even if VDDX is different.
  • FIG. 16 is a diagram showing an example of temperature characteristics of voltages Vad1 and Vad2.
  • (a) is a diagram showing linear approximation characteristics of voltages Vad1 and Vad2.
  • the horizontal axis indicates temperature, and the vertical axis indicates the output voltage of AD converter 102 .
  • a line LV40a (Te) is a characteristic linearly approximating the temperature change of the voltage Vad1.
  • the line LV40b (Te) is a characteristic linearly approximating the temperature change of the voltage Vad2.
  • temperature changes in the output voltages of nodes n1 and n2 can be linearly approximated as shown in equations (6) and (7).
  • K40a and K40b are intercept values when the measured temperature Te is 0 degrees, and K42a and K42b are slopes.
  • (b) is a diagram showing a correction coefficient Tab401 for the linear approximation line LV40a (Te) and a correction coefficient Tab402 for the linear approximation line LV40b (Te).
  • Correction coefficients Tab401 and Tab402 can be calculated as shown in equations (8) and (9), like equation (3) in the first embodiment.
  • the differential voltage Vad3 Vad1 ⁇ Vad2 between the voltage Vad1 and the voltage Vad2 can be temperature corrected by the correction coefficients Tab401 and Tab402. Therefore, in the present embodiment, the voltage conversion equation Eq300 is generated as equation (10) for Vad3 in the same manner as equation (1).
  • VA40 is the voltage Vad3 when the voltage VDDA is supplied to the terminal O10
  • VB40 is the voltage Vad3 when the voltage VDDB is supplied to the terminal O10.
  • FIG. 17 is a diagram showing an example of temperature characteristics of the voltage Vad3.
  • (a) is a diagram showing a linear approximation characteristic of the voltage Vad3.
  • the horizontal axis indicates temperature, and the vertical axis indicates differential voltage Vad3 based on the output of AD converter 102 .
  • a line LV300 (Te) is a characteristic linearly approximating the temperature change of the voltage Vad3.
  • the temperature change of the differential voltage between the output voltages of the nodes n1 and n2 can be linearly approximated as shown in the equation (11). Referring to equations (6) and (7), for example, K300a corresponds to (K40a-K40b) and K300b corresponds to (K42a-K42b).
  • the calculation unit 104 measures the divided voltage Vad3 between the node n1 and the node n2 of the resistance ladder circuit 100 using the voltage conversion formula Eq300 (see formula 10).
  • the voltage measurement voltage VDDXa is generated, and the correction unit 40 corrects the measurement voltage VDDXa with the correction coefficient Tab300(Te) of the equation (11) using the measurement temperature Te to generate the correction voltage VDDZ.
  • the resistance ratio A:B:C of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
  • this technique can take the following structures.
  • a resistor ladder circuit in which a plurality of resistors are connected in series; a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value; a processing unit that corrects the digital value according to the measured temperature; A voltage measuring device.
  • the processing unit is a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value; a correction unit that corrects the first measured voltage according to the measured temperature;
  • the voltage measuring device comprising:
  • the storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table, The voltage measurement device according to (5), wherein the calculation unit performs the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
  • the processing unit is The voltage measuring device according to (1), wherein a first measured voltage obtained by a predetermined voltage conversion calculation process is corrected for the digital value according to the measured temperature.
  • a voltage measurement method comprising:
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correction step of correcting the first measured voltage according to the measured temperature.
  • the computing step is converting to a first measured voltage based on the voltage conversion formula; and a correction step of correcting the first measured voltage according to a correction coefficient corresponding to the measured temperature.

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  • Measurement Of Current Or Voltage (AREA)

Abstract

[Problem] To provide, according to the present disclosure, a voltage measurement method and a voltage measurement device capable of suppress decreases in measurement accuracy caused by temperature changes. [Solution] According to the present disclosure, provided is a voltage measurement device comprising: a resistor ladder circuit in which a plurality of resistors are connected in series; a conversion unit that converts, to a digital value, a divided voltage that has been divided by the resistor ladder circuit; and a processing unit that corrects the digital value in accordance with the measured temperature.

Description

電圧測定装置、及び電圧測定方法Voltage measuring device and voltage measuring method
　本開示は電圧測定装置、及び電圧測定方法に関する。 The present disclosure relates to a voltage measuring device and a voltage measuring method.
　電圧測定装置では、直列に抵抗が接続された抵抗ラダー回路の抵抗電圧を分圧することにより測定電圧が測定される。ところが、温度変化時に異なる温度係数を持つ寄生抵抗の影響により、温度変化時に抵抗ラダー回路の各抵抗の抵抗比率が変化してしまう。これにより、電圧測定装置の測定電圧の測定精度が低下する恐れがある。 In the voltage measuring device, the measurement voltage is measured by dividing the resistance voltage of a resistor ladder circuit in which resistors are connected in series. However, due to the influence of parasitic resistances having different temperature coefficients when the temperature changes, the resistance ratio of each resistor in the resistor ladder circuit changes when the temperature changes. As a result, the measurement accuracy of the voltage measured by the voltage measuring device may be degraded.
特開２０１７－１９８５２３号公報JP 2017-198523 A
　そこで、本開示では、温度変化による測定精度の低下を抑制可能な電圧測定装置、及び電圧測定方法を提供するものである。 Therefore, the present disclosure provides a voltage measuring device and a voltage measuring method capable of suppressing deterioration in measurement accuracy due to temperature changes.
　上記の課題を解決するために、本開示によれば、複数の抵抗が直列に接続される抵抗ラダー回路と、
　前記抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換部と、
　前記デジタル値を測定温度に従い補正する処理部と、
　を備える、電圧測定装置が提供される。 In order to solve the above problems, according to the present disclosure, a resistor ladder circuit in which a plurality of resistors are connected in series;
a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value;
a processing unit that corrects the digital value according to the measured temperature;
A voltage measurement device is provided, comprising:
　前記処理部は、
　前記デジタル値に対して、所定の電圧変換計算処理により第１測定電圧を計算する計算部と、
　前記第１測定電圧を前記測定温度に従い補正する補正部と、
　を有してもよい。 The processing unit is
a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value;
a correction unit that corrects the first measured voltage according to the measured temperature;
may have
　前記補正係数は、前記抵抗ラダー回路の温度を変更させた場合の前記第１測定電圧を、所定の温度における前記第１測定電圧に近づける係数であってもよい。 The correction coefficient may be a coefficient that brings the first measured voltage when the temperature of the resistance ladder circuit is changed closer to the first measured voltage at a predetermined temperature.
　前記補正部の補正処理を規定する数式、及び変換テーブの少なくとも一方を記憶する記憶部を更に備え、
　前記補正部は、前記記憶部に記憶される前記数式、及び前記変換テーブの少なくとも一方に基づき、前記補正を行ってもよい。 Further comprising a storage unit that stores at least one of a formula that defines the correction process of the correction unit and a conversion table,
The correction unit may perform the correction based on at least one of the formula stored in the storage unit and the conversion table.
　　前記記憶部は、前記電圧変換計算処理を規定する第２数式、及び第２変換テーブの少なくとも一方を更に記憶し、
　前記計算部は、前記記憶部に記憶される前記第２数式、及び前記第２変換テーブの少なくとも一方に基づき、前記電圧変換計算処理を行ってもよい。 The storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table,
The calculation unit may perform the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
　前記第１同期信号と、前記第２同期信号とは、フレームレートが異なってもよい。 The first synchronization signal and the second synchronization signal may have different frame rates.
　前記処理部は、
　前記デジタル値に対して、所定の電圧変換計算処理による第１測定電圧を
　前記測定温度に従い補正してもよい。 The processing unit is
A first measured voltage obtained by a predetermined voltage conversion calculation process may be corrected with respect to the digital value according to the measured temperature.
　前記分圧電圧は、前記抵抗ラダー回路の基準電圧と、前記複数の抵抗の所定の接続点との間の電圧であってもよい。 The divided voltage may be a voltage between the reference voltage of the resistor ladder circuit and a predetermined connection point of the plurality of resistors.
　前記分圧電圧は、前記複数の抵抗の所定の第1接続点と第２接続点との間の電圧であってもよい。 The divided voltage may be a voltage between a predetermined first connection point and a second connection point of the plurality of resistors.
　前記測定温度を測定する温度センサを更に備えてもよい。 A temperature sensor for measuring the measured temperature may be further provided.
　本開示によれば抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換工程と、
　前記デジタル値を温度センサの測定温度に従い補正する演算工程と、
　を備える、電圧測定方法が提供される。 According to the present disclosure, a conversion step of converting the divided voltage divided by the resistor ladder circuit into a digital value;
a calculation step of correcting the digital value according to the temperature measured by the temperature sensor;
A voltage measurement method is provided, comprising:
　複数の既知の測定電圧を前記抵抗ラダー回路により分圧して複数のデジタル値に変換する変換工程と、
　前記複数のデジタル値と前記複数の既知の測定電圧とを対応させる電圧変換式を生成する工程を更にそなえてもよい。 a conversion step of dividing a plurality of known measured voltages by the resistor ladder circuit and converting them into a plurality of digital values;
The step of generating a voltage conversion equation that associates the plurality of digital values with the plurality of known measured voltages may be further included.
　前記演算工程は、
　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
　前記第１測定電圧を測定温度に従い補正する補正工程と、を有してもよい。 The computing step is
converting to a first measured voltage based on the voltage conversion formula;
and a correcting step of correcting the first measured voltage according to the measured temperature.
　所定の測定電圧を前記抵抗ラダー回路の温度を変更して、前記電圧変換式に基づき複数の第１測定電圧に変換する工程と、
　前記複数の第１測定電圧を所定温度の測定電圧に近づける、測定温度に対応する補正係数を生成する工程と、を更にそなえてもよい。 converting a predetermined measured voltage into a plurality of first measured voltages based on the voltage conversion equation by changing the temperature of the resistor ladder circuit;
generating a correction factor corresponding to the measured temperature to bring the plurality of first measured voltages closer to the measured voltage at the predetermined temperature.
前記演算工程は、
　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
　前記第１測定電圧を測定温度に対応する補正係数に従い補正する補正工程と、を有してもよい。 The computing step is
converting to a first measured voltage based on the voltage conversion formula;
and a correcting step of correcting the first measured voltage according to a correction factor corresponding to the measured temperature.
第１実施形態における電圧測定装置の構成例を示すブロック図。1 is a block diagram showing a configuration example of a voltage measuring device according to a first embodiment; FIG. 電圧センサの抵抗ラダー回路と、ＡＤ変換器の構成例を示す図。FIG. 4 is a diagram showing a configuration example of a resistance ladder circuit of a voltage sensor and an AD converter; 参照電圧とＡＤ変換器の出力電圧の関係を示す図。FIG. 4 is a diagram showing the relationship between the reference voltage and the output voltage of the AD converter; 抵抗ラダー回路の抵抗比と、温度、及び測定電圧との変化例を模式的に示す図。FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio of a resistance ladder circuit, temperature, and measured voltage; 抵抗ラダー回路の出力電圧の温度特性を示す図。FIG. 4 is a diagram showing the temperature characteristics of the output voltage of the resistor ladder circuit; 端子の測定電圧に対して、計算部が計算する補正前の計算値を示す図。FIG. 10 is a diagram showing a calculated value before correction calculated by a calculating unit with respect to a measured voltage of a terminal; 補正係数を用いた補正部の補正演算例を模式的に示す図。FIG. 4 is a diagram schematically showing an example of correction calculation by a correction unit using a correction coefficient; 計算部が計算する補正前の計算値の線形近似例を示す図。FIG. 5 is a diagram showing an example of linear approximation of calculated values before correction calculated by a calculation unit; 補正係数を近似電圧に乗算した場合の近似測定電圧を示す図。FIG. 10 is a diagram showing an approximate measured voltage when the approximate voltage is multiplied by a correction factor; 電圧変換式の生成処理例を示すフロ－チャート。4 is a flowchart showing an example of processing for generating a voltage conversion formula; 補正係数の生成処理例を示すフロ－チャート。4 is a flowchart showing an example of correction coefficient generation processing; キャリブレーション終了後の、電圧測定処理例を示すフロ－チャート。4 is a flow chart showing an example of voltage measurement processing after calibration. 第１実施形態の変形例１に係る電圧測定装置の構成例を示すブロック図。FIG. 2 is a block diagram showing a configuration example of a voltage measuring device according to Modification 1 of the first embodiment; 第２実施形態に係る抵抗ラダー回路１と、ＡＤ変換器の構成例を示す図。FIG. 5 is a diagram showing a configuration example of a resistor ladder circuit 1 and an AD converter according to a second embodiment; 抵抗ラダー回路の抵抗比を示す図。FIG. 4 is a diagram showing resistance ratios of a resistance ladder circuit; 電圧の温度特性例を示す図。FIG. 4 is a diagram showing an example of temperature characteristics of voltage; 電圧の温度特性例を示す図。FIG. 4 is a diagram showing an example of temperature characteristics of voltage;
　以下、図面を参照して、電圧測定装置、及び電圧測定方法の実施形態について説明する。以下では、電圧測定装置の主要な構成部分を中心に説明するが、電圧測定装置には、図示又は説明されていない構成部分や機能が存在しうる。以下の説明は、図示又は説明されていない構成部分や機能を除外するものではない。 Embodiments of a voltage measuring device and a voltage measuring method will be described below with reference to the drawings. Although the main components of the voltage measurement device will be mainly described below, the voltage measurement device may have components and functions that are not illustrated or described. The following description does not exclude components or features not shown or described.
　（第１実施形態）
　図１は、本技術の第１実施形態における電圧測定装置１の構成例を示すブロック図である。この電圧測定装置は、温度補正が可能な装置であり、半導体基板上の集積回路として構成可能である。この電圧測定装置１は、例えばＣＰＵ（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔを含んで構成され、温度センサ１０と、記憶部２０と、電圧センサ３０と、補正部４０とを、備える。 (First embodiment)
FIG. 1 is a block diagram showing a configuration example of a voltage measuring device 1 according to a first embodiment of the present technology. This voltage measuring device is a device capable of temperature correction and can be configured as an integrated circuit on a semiconductor substrate. The voltage measuring device 1 includes, for example, a CPU (Central Processing Unit), and includes a temperature sensor 10 , a storage section 20 , a voltage sensor 30 and a correction section 40 .
　図１では、更に端子Ｏ１０～Ｏ２２が図示されている。端子Ｏ１０には、測定電圧ＶＤＤＸが入力され、端子Ｏ１２には、参照電圧Ｖｒｅｆが入力される。また、端子Ｏ１４には、例えば制御信号Ｓ０が入力される。また、端子Ｏ１６には、温度依存性を有する測定電圧Ｖｔｅが入力され、端子Ｏ１８には、参照電圧Ｖｒｅｆが入力される。さらにまた、端子Ｏ２０からは、測定電圧ＶＤＤＸを補正した補正電圧ＶＤＤＺが出力され、端子Ｏ２２からは、測定温度Ｔｅが出力される。 In FIG. 1, terminals O10 to O22 are also illustrated. A measurement voltage VDDX is input to the terminal O10, and a reference voltage Vref is input to the terminal O12. For example, the control signal S0 is input to the terminal O14. A measurement voltage Vte having temperature dependence is input to the terminal O16, and a reference voltage Vref is input to the terminal O18. Furthermore, a corrected voltage VDDZ obtained by correcting the measured voltage VDDX is output from the terminal O20, and the measured temperature Te is output from the terminal O22.
　温度センサ１０は、端子Ｏ１８から入力される参照電圧Ｖｒｅｆに基づくセンサである。この電圧センサ３０には、端子Ｏ１６から温度依存性を有する測定電圧Ｖｔｅが入力される。この測定電圧Ｖｔｅは、例えば所定電流が流れるように設けられるダイオードの順方向電圧である。ダイオードの順方向電圧である測定電圧Ｖｔｅは、温度によって変動するので、温度センサ１０は測定電圧Ｖｔｅに応じて温度Ｔｅを検出することが可能である。なお、所定電流が流れるように設けられるダイオードなどの回路は、温度センサ１０内に構成してもよい。 The temperature sensor 10 is a sensor based on the reference voltage Vref input from the terminal O18. A measurement voltage Vte having temperature dependence is input to the voltage sensor 30 from a terminal O16. This measurement voltage Vte is, for example, the forward voltage of a diode provided to allow a predetermined current to flow. Since the measured voltage Vte, which is the forward voltage of the diode, varies with temperature, the temperature sensor 10 can detect the temperature Te according to the measured voltage Vte. A circuit such as a diode that allows a predetermined current to flow may be configured within the temperature sensor 10 .
　記憶部２０は、不揮発性の記憶媒体及び揮発性の記憶媒体のうち少なくとも一方を含み、データやプログラムを記憶することが可能である。記憶部２０は、例えばＥＥＰＲＯＭ（Ｅｌｅｃｔｒｉｃａｌｌｙ　Ｅｒａｓａｂｌｅ　Ｐｒｏｇｒａｍｍａｂｌｅ　Ｒｅａｄ　Ｏｎｌｙ　Ｍｅｍｏｒｙ）及びＲＡＭ（Ｒａｎｄｏｍ　Ａｃｃｅｓｓ　Ｍｅｍｏｒｙ）として用いられる。この記憶部２０は、電圧センサ３０、及び補正部４０の計算に必要となる演算式Ｅｑ１０、補正係数Ｔａｂ２０などの各種の情報を記憶する。 The storage unit 20 includes at least one of a nonvolatile storage medium and a volatile storage medium, and is capable of storing data and programs. The storage unit 20 is used, for example, as EEPROM (Electrically Erasable Programmable Read Only Memory) and RAM (Random Access Memory). The storage unit 20 stores various information such as the voltage sensor 30 and the arithmetic expression Eq10 and the correction coefficient Tab20 required for the calculation of the correction unit 40 .
　電圧センサ３０はキャリブレーソン機能付きの、電圧センサである。この電圧センサ３０は、抵抗ラダー回路１００と、ＡＤ変換器１０２と、計算部１０４とを有する。なお、本実施形態に係る補正部４０と計算部１０４とが処理部５０を構成する。すなわち、本実施形態では、計算部１０４は、電圧センサ３０内に構成され、補正部４０は、電圧センサ３０外に構成されるが、これに限定されない。例えば、補正部４０を電圧センサ３０内に計算部１０４と一体的に構成してもよい。或いは、計算部１０４を電圧センサ３０外に補正部４０と一体的に構成してもよい The voltage sensor 30 is a voltage sensor with a calibration function. This voltage sensor 30 has a resistor ladder circuit 100 , an AD converter 102 and a calculator 104 . Note that the correction unit 40 and the calculation unit 104 according to this embodiment constitute the processing unit 50 . That is, in the present embodiment, the calculation unit 104 is configured inside the voltage sensor 30 and the correction unit 40 is configured outside the voltage sensor 30, but the present invention is not limited to this. For example, the correction unit 40 may be integrated with the calculation unit 104 inside the voltage sensor 30 . Alternatively, the calculation unit 104 may be integrated with the correction unit 40 outside the voltage sensor 30.
　図２は、電圧センサ３０の抵抗ラダー回路１００と、ＡＤ変換器１０２の構成例を示す図である。図２に示すように、抵抗ラダー回路１００は、複数の抵抗１００ａと、スイッティング素子１００ｂとを有する。複数の抵抗１００ａとスイッティング素子１００ｂとは端子Ｏ１０と電圧ＶＳＳ線との間に直列に接続される。 FIG. 2 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 of the voltage sensor 30. As shown in FIG. As shown in FIG. 2, the resistor ladder circuit 100 has a plurality of resistors 100a and switching elements 100b. A plurality of resistors 100a and switching elements 100b are connected in series between the terminal O10 and the voltage VSS line.
　スイッティング素子１００ｂは、例えばトランジスタであり、制御信号Ｓ０にしたがい、導通状態、又は非導通状態になる。複数の抵抗１００ａのノードｎ１とＡＤ変換器１０２とは接続されている。なお、本実施形態に係る制御信号Ｓ０は外部の制御装置から入力されるが、これに限定されない。例えば計算部１０４が各回路を制御する制御信号ＳＯを生成してもよい。 The switching element 100b is, for example, a transistor, and becomes conductive or non-conductive according to the control signal S0. A node n1 of the plurality of resistors 100a and the AD converter 102 are connected. Note that the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this. For example, the calculation unit 104 may generate the control signal SO for controlling each circuit.
　これにより、スイッティング素子１００ｂが導通状態の際に、測定電圧ＶＤＤＸと電圧ＶＳＳとの電圧は、
抵抗ラダー回路１００の抵抗１００ａにより分圧され、分圧電圧ＶｓｅｎｓｅがＡＤ変換器１０２に供給される。 As a result, when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are
The voltage is divided by the resistors 100 a of the resistor ladder circuit 100 and the divided voltage Vsense is supplied to the AD converter 102 .
　ＡＤ変換器１０２は、分圧電圧Ｖｓｅｎｓｅをアナログ、デジタル変換し、電圧Ｖａｄを生成する。ＡＤ変換器１０２は、計算部１０４に接続される。 The AD converter 102 analog-to-digital converts the divided voltage Vsense to generate a voltage Vad. AD converter 102 is connected to calculator 104 .
　計算部１０４は、例えば電圧変換式Ｅｑ１０により、ＡＤ変換器１０２の出力電圧Ｖａｄを測定電圧ＶＤＤＸａに変換する。ここで図３を用いて電圧変換式Ｅｑ１０に関して説明する。なお、本実施形態に係るＶＤＤＸａが第１測定電圧に対応する。 The calculation unit 104 converts the output voltage Vad of the AD converter 102 into the measurement voltage VDDXa by, for example, the voltage conversion formula Eq10. Here, the voltage conversion equation Eq10 will be described with reference to FIG. Note that VDDXa according to the present embodiment corresponds to the first measurement voltage.
　図３は、参照電圧ＶｒｅｆとＡＤ変換器１０２の出力電圧Ｖaｄの関係を示す図である。横軸はキャリブレーション時の参照電圧Ｖｒｅｆを示し、縦軸は参照電圧Ｖｒｅｆを入力した際の、ＡＤ変換器１０２の出力電圧Ｖaｄを示す。ここで、参照電圧Ｖｒｅｆは、予め正しい値が既知である電圧を意味する。ラインＬａｂ２０は、参照電圧Ｖｒｅｆと出力電圧Ｖaｄとの関係を示す特性線である。このラインＬａｂ２０は、例えば所定の温度（例えば２０度、或いは４０度など）の時の特性である。 FIG. 3 is a diagram showing the relationship between the reference voltage Vref and the output voltage Vad of the AD converter 102. FIG. The horizontal axis indicates the reference voltage Vref during calibration, and the vertical axis indicates the output voltage Vad of the AD converter 102 when the reference voltage Vref is input. Here, the reference voltage Vref means a voltage whose correct value is known in advance. A line Lab20 is a characteristic line showing the relationship between the reference voltage Vref and the output voltage Vad. This line Lab20 is, for example, the characteristic at a predetermined temperature (for example, 20 degrees or 40 degrees).
　例えば特性線Ｌａｂ２０は、参照電圧ＶＡを端子Ｏ１０に入力した際のＡＤ変換器１０２の出力電圧ＶＤＤＡと、参照電圧ＶＢを端子Ｏ１０に入力した際のＡＤ変換器１０２の出力電圧ＶＤＤＢとの間の特性を示す。このように、特性線Ｌａｂ２０は、線形である。すなわち、温度変化が無い場合には、参照電圧Ｖｒｅｆの変化に対して、出力電圧Ｖaｄは線形に変化する。 For example, the characteristic line Lab20 is between the output voltage VDDA of the AD converter 102 when the reference voltage VA is input to the terminal O10 and the output voltage VDDB of the AD converter 102 when the reference voltage VB is input to the terminal O10. characterize. Thus, the characteristic line Lab20 is linear. That is, when there is no temperature change, the output voltage Vad changes linearly with respect to changes in the reference voltage Vref.
　この線線形特性Ｌａｂ２０は例えば、（１）式となる。このように予め演算した（１）式を、電圧変換式Ｅｑ１０として、記憶部２０に記憶する。
This linear characteristic Lab20 becomes, for example, the formula (1). The equation (1) calculated in advance in this manner is stored in the storage unit 20 as the voltage conversion equation Eq10.
　この計算部１０４は、例えばＥｑ１０にしたがい、ＡＤ変換器１０２の出力電圧ＶａｄをＶＤＤＸａに変換する。或いは、計算部１０４は、あらかじめ（１）式を測定電圧の範囲で演算し、テーブルとして記憶部２０に記憶させておいてもよい。この場合、計算部１０４は、記憶部３０に記憶されるテーブルに従いＶＤＤＸａを計算することが可能である。なお、線形特性Ｌａｂ２０の線形性が完全に成り立つときは、ＶＤＤＸａはＶＤＤＸと同値になる。 This calculation unit 104 converts the output voltage Vad of the AD converter 102 into VDDXa, for example, according to Eq10. Alternatively, the calculation unit 104 may calculate the formula (1) in advance within the range of the measured voltage and store it in the storage unit 20 as a table. In this case, the calculation unit 104 can calculate VDDXa according to the table stored in the storage unit 30 . Note that when the linearity of the linear characteristic Lab20 is completely established, VDDXa has the same value as VDDX.
　図４は、抵抗ラダー回路１００の抵抗比Ａ：Ｂと、温度、及び測定電圧との変化例を模式的に示す図である。このように、抵抗ラダー回路１００では、温度がＴＶＤＤ１からＴＶＤＤ３に変化するに従い、抗比Ａ：Ｂが変化する。これにより、測定電圧は、VＤＤ１からＶＤＤ３に低下する。例えば、抵抗比Ａ：Ｂの温度変化は、抵抗ラダー回路１００の抵抗１００aの寄生容量と寄生抵抗の影響であると考えられている。 FIG. 4 is a diagram schematically showing an example of changes in the resistance ratio A:B of the resistance ladder circuit 100, temperature, and measured voltage. Thus, in the resistance ladder circuit 100, the resistance ratio A:B changes as the temperature changes from TVDD1 to TVDD3. As a result, the measured voltage drops from VDD1 to VDD3. For example, the temperature change of the resistance ratio A:B is considered to be the effect of the parasitic capacitance of the resistance 100a of the resistance ladder circuit 100 and the parasitic resistance.
　図５を用いて、図４で示すＴＶＤＤ１、ＴＶＤＤ２における温度特性例を説明する。図５は、抵抗ラダー回路１００の出力電圧Ｖｓｅｎｓｅの温度特性Ｌａｂ１０ａ、ｂを示す図である。低温ＴＶＤＤ１時の線形特性Ｌａｂ１０ａと、低温時よりも高温ＴＶＤＤ２時の線形特性Ｌａｂ１０ｂを示す。横軸は測定電圧ＶＤＤＸを示し、縦軸はＡＤ変換器１０２の出力電圧Ｖaｄを示す。 An example of temperature characteristics in TVDD1 and TVDD2 shown in FIG. 4 will be described using FIG. FIG. 5 is a diagram showing temperature characteristics Lab10a and b of the output voltage Vsense of the resistance ladder circuit 100. As shown in FIG. A linear characteristic Lab10a at a low temperature TVDD1 and a linear characteristic Lab10b at a temperature TVDD2 higher than that at a low temperature are shown. The horizontal axis indicates the measured voltage VDDX, and the vertical axis indicates the output voltage Vad of the AD converter 102 .
　ＡＤ変換器１０２は、入出力が線形比例するので、図５の出力電圧Ｖaｄは、抵抗ラダー回路１００の出力電圧Ｖｓｅｎｓｅの出力特性に対応する。図４、５に示すように、抵抗ラダー回路１００は、温度変化時に例えば異なる温度係数を持つ寄生抵抗の影響により、温度変化時に抵抗ラダー回路１００の各抵抗の抵抗比Ａ：Ｂが変化してしまう。 Since the input and output of the AD converter 102 are linearly proportional, the output voltage Vad in FIG. 5 corresponds to the output characteristics of the output voltage Vsense of the resistance ladder circuit 100. As shown in FIGS. 4 and 5, in the resistance ladder circuit 100, the resistance ratio A:B of each resistor in the resistance ladder circuit 100 changes when the temperature changes due to, for example, parasitic resistances having different temperature coefficients. put away.
　この例では、抵抗ラダー回路１００の出力電圧Ｖｓｅｎｓｅは高温になるにしたがい低下する。このため、低温時の温度特性Ｌａｂ１０ａにしたがい（１）式を演算した後に、温度が上昇し、温度特性Ｌａｂ１０ｂに変換した場合には、測定電圧ＶＤＤ１は、実際よりも下側の値ＶＤＤ２として演算される。同様に、更に高温ＴＶＤＤ３となると、測定電圧ＶＤＤ１は、更に下側の値ＶＤＤ３として演算される。なお、抵抗ラダー回路１００の出力電圧Ｖｓｅｎｓｅは高温になるにしたがい低下するが、これに限定されない。例えば、抵抗ラダー回路１００の出力電圧Ｖｓｅｎｓｅは高温になるにしたがい増加してもよい。 In this example, the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature rises. Therefore, when the temperature rises after calculating the equation (1) according to the temperature characteristic Lab 10a at a low temperature and then converting to the temperature characteristic Lab 10b, the measured voltage VDD1 is calculated as a lower value VDD2 than the actual value. be done. Similarly, when the temperature TVDD3 becomes even higher, the measured voltage VDD1 is calculated as a further lower value VDD3. Although the output voltage Vsense of the resistor ladder circuit 100 decreases as the temperature increases, the present invention is not limited to this. For example, the output voltage Vsense of resistor ladder circuit 100 may increase as the temperature increases.
　図６は、端子Ｖ１０の測定電圧ＶＤＤ１に対して、計算部１０４が計算する補正前の計算値Ｖ１０を示す図である。横軸は温度を示し、縦軸は計算値Ｖ１０を示す。このように、温度上昇にしたがい、補正しないと計算値は低下してしまう。 FIG. 6 is a diagram showing the calculated value V10 before correction calculated by the calculating unit 104 for the measured voltage VDD1 of the terminal V10. The horizontal axis indicates the temperature, and the vertical axis indicates the calculated value V10. In this way, as the temperature rises, the calculated value will decrease unless corrected.
　そこで、本実施形態に係る補正部４０は、図５に示すように、出力電圧Ｖｓｅｎｓｅの温度特性Ｌａｂ１０ａ、ｂが変化する場合に、温度に応じた補正演算を更に行う。例えば、温度がＴＶＤＤ１のときに電圧変換式Ｅｑ１０を演算した場合、図５の例では、温度ＴＶＤＤ２に応じた補正係数により、測定電圧ＶＤＤ２を増加させ、ＶＤＤ１になるように演算処理する。より具体的には、図７に示す補正演算を行う。 Therefore, as shown in FIG. 5, the correction unit 40 according to the present embodiment further performs correction calculation according to the temperature when the temperature characteristics Lab10a, b of the output voltage Vsense change. For example, when the voltage conversion formula Eq10 is calculated when the temperature is TVDD1, in the example of FIG. 5, the measured voltage VDD2 is increased by a correction coefficient according to the temperature TVDD2, and the calculation is performed so that it becomes VDD1. More specifically, the correction calculation shown in FIG. 7 is performed.
　図７は、補正係数を用いた補正部４０の補正演算例を模式的に示す図である。（ａ）図は、補正係数Ｔａｂ２０を示す。横軸は温度を示し、縦軸は補正係数の値を示す。例えば、電圧変換式Ｅｑ１０を演算したキャリブレーション時の温度が２０度とする。すなわち、この補正係数Ｔａｂ２０は、例えば温度２０度の時に演算した電圧変換式Ｅｑ１０（（１）式参照）を補正する補正係数例を示す。 FIG. 7 is a diagram schematically showing an example of correction calculation by the correction unit 40 using correction coefficients. (a) The figure shows the correction coefficient Tab20. The horizontal axis indicates the temperature, and the vertical axis indicates the value of the correction coefficient. For example, assume that the temperature at the time of calibration at which the voltage conversion formula Eq10 is calculated is 20 degrees. That is, this correction coefficient Tab20 shows an example of a correction coefficient for correcting the voltage conversion formula Eq10 (see formula (1)) calculated when the temperature is 20 degrees, for example.
　（ｂ）図は、測定電圧ＶＤＤ１を線形近似した電圧例を示す図である。横軸は温度を示し、縦軸は電圧を示す。ラインＬＶ１０ａが測定電圧ＶＤＤ１の温度変化を示す。 　(b) is a diagram showing a voltage example obtained by linearly approximating the measured voltage VDD1. The horizontal axis indicates temperature and the vertical axis indicates voltage. A line LV10a indicates the temperature change of the measured voltage VDD1.
　（ｃ）図は、計算部１０４により、測定電圧ＶＤＤ１を温度補正した例を線形に示す図である。ラインＬＶ１０ｂが測定電圧ＶＤＤ１の温度補正例を線形で示す。補正係数Ｔａｂ２０は、例えば温度２０度の時に演算した（１）式を補正する補正係数例を示す。縦軸は、補正係数を示し、横軸は温度を示す。このように、補正部４０は、出力電圧Ｖｓｅｎｓｅの温度変化を抑制するように補正係数Ｔａｂ２０（後述の（３）式を参照）をＡＤ変換器１０２の出力電圧Ｖaｄに乗算する。このように、補正部４０は、計算部１０４が演算した測定電圧ＶＤＤＸａを、測定温度Ｔｅに応じた補正係数Ｔａｂ２０（Ｔｅ）に基づき、補正する。 　(c) is a diagram linearly showing an example in which the measurement voltage VDD1 is temperature-corrected by the calculation unit 104. FIG. A line LV10b linearly indicates an example of temperature correction of the measured voltage VDD1. A correction coefficient Tab20 indicates an example of a correction coefficient for correcting equation (1) calculated when the temperature is 20 degrees, for example. The vertical axis indicates the correction coefficient, and the horizontal axis indicates the temperature. In this manner, the correction unit 40 multiplies the output voltage Vad of the AD converter 102 by the correction coefficient Tab20 (see formula (3) described later) so as to suppress the temperature change of the output voltage Vsense. In this manner, the correcting unit 40 corrects the measured voltage VDDXa calculated by the calculating unit 104 based on the correction coefficient Tab20(Te) corresponding to the measured temperature Te.
　ここで、図８、９を用いて補正係数Ｔａｂ２０（Ｔｅ）の演算例を説明する。図８は、計算部１０４が計算する補正前の計算値Ｖ１０の線形近似例を示す図である。図８（ａ）は、計算部１０４が電圧変換式Ｅｑ１０（（１）式参照）を用いて計算する補正前の計算値Ｖ１０を示す図である。図８（ｂ）は、計算値Ｖ１０を線形近似した計算値ＬＶ１０ａを示す図である。例えば、電圧測定装置１では、予備実験により、図８（ａ）で示した測定データに応じた計算値Ｖ１０を予め取得し、例えば記憶部２０に記憶してある。縦軸は、温度を示し、横軸は測定電圧を示す。 Here, a calculation example of the correction coefficient Tab20(Te) will be described using FIGS. FIG. 8 is a diagram showing an example of linear approximation of the pre-correction calculated value V10 calculated by the calculator 104. As shown in FIG. FIG. 8A is a diagram showing calculated value V10 before correction calculated by calculation unit 104 using voltage conversion formula Eq10 (see formula (1)). FIG. 8(b) is a diagram showing a calculated value LV10a obtained by linearly approximating the calculated value V10. For example, in the voltage measuring device 1, the calculated value V10 corresponding to the measurement data shown in FIG. The vertical axis indicates temperature and the horizontal axis indicates measured voltage.
　計算部１０４は、補正前の計算値Ｖ１０を例えば最小二乗法などのより線形式で近似する。この場合、測定温度Ｔｅに対する線形式は、例えば（２）式で示すことが可能である。係数Ｋ１は温度０度の時の切辺の値であり、係数Ｋ２は、傾きである。
The calculation unit 104 approximates the pre-correction calculated value V10 using a more linear formula such as the least-squares method. In this case, the linear expression for the measured temperature Te can be represented by, for example, equation (2). The coefficient K1 is the value of the cross section at a temperature of 0 degrees, and the coefficient K2 is the slope.
　このときの電圧変換式Ｅｑ１０（（１）式参照）の演算時の温度が２０度であれば、２０度に対応する近似電圧ＬＶ１０ａ（Ｔｅ＝２０）を（２）式を除算すると（３）式で示す補正係数Ｔａｂ２０（Ｔｅ）が演算される。このように、測定温度Ｔｅに対する補正係数Ｔａｂ２０（Ｔｅ）が演算される。 If the temperature at the time of calculation of the voltage conversion formula Eq10 (see formula (1)) at this time is 20 degrees, dividing the approximate voltage LV10a (Te=20) corresponding to 20 degrees by the formula (2) yields (3) A correction coefficient Tab20(Te) represented by the formula is calculated. Thus, the correction coefficient Tab20(Te) for the measured temperature Te is calculated.
　図９は、（３）式で示す補正係数Ｔａｂ２０（Ｔｅ）を（２）式で示す近似電圧ＬＶ１０ａ（Ｔｅ）に乗算した場合の近似測定電圧ＬＶ１０ａ（Ｔｅ＝２０度）を示す図である。このように、測定温度係数Ｔｅに応じて、Ｔａｂ２０（Ｔｅ）を近似電圧ＬＶ１０ａ（Ｔｅ）に乗算すると、２０度に対応する近似電圧ＬＶ１０ａ（Ｔｅ＝２０）になる。実際の計算値Ｖ１０（図８参照）は、線形から若干ずれた値を有するが、計算値Ｖ１０に補正係数Ｔａｂ２０（Ｔ）を乗算することで、温度変動が抑制される。このように、電圧測定装置１の抵抗ラダー回路１００の温度特性は一度測定するとほぼ不変であるので、（２）式で示す線形式を一度演算すると、電圧変換式Ｅｑ１０（（１）式参照）を生成したときの測定温度Ｔｅに合わせて、補正係数を演算可能となる。 FIG. 9 is a diagram showing the approximate measured voltage LV10a (Te=20 degrees) obtained by multiplying the approximate voltage LV10a (Te) shown in Equation (2) by the correction coefficient Tab20(Te) shown in Equation (3). Multiplying the approximate voltage LV10a (Te) by Tab20(Te) according to the measured temperature coefficient Te results in the approximate voltage LV10a (Te=20) corresponding to 20 degrees. Although the actual calculated value V10 (see FIG. 8) has a value slightly deviated from linearity, the temperature fluctuation is suppressed by multiplying the calculated value V10 by the correction coefficient Tab20(T). In this way, once the temperature characteristic of the resistance ladder circuit 100 of the voltage measuring device 1 is measured, it is almost unchanged. It becomes possible to calculate the correction coefficient in accordance with the measured temperature Te when the is generated.
　以上が本実施形態に係る電圧測定装置１の構成の説明であるが、以下に処理例を説明する。図１０は、電圧変換式Ｅｑ１０（（１）式参照）の生成処理例を示すフロ－チャートである。ここでは、参照電圧ＶＡ、ＶＢ（図３参照）が、外部の制御装置の制御信号Ｓ０にしたがい供給される場合を説明する。また、計算部１０４の演算処理例として説明するが、外部装置で同様の処理を行ってもよい。 The above is the description of the configuration of the voltage measurement device 1 according to the present embodiment, and a processing example will be described below. FIG. 10 is a flow chart showing an example of processing for generating the voltage conversion equation Eq10 (see equation (1)). Here, the case where the reference voltages VA and VB (see FIG. 3) are supplied according to the control signal S0 of the external control device will be described. Further, although an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
　まず、キャリブレーション時には、制御信号Ｓ０の動作指示にしたがい、計算部１０４は端子Ｏ１０から既知の参照電圧Ｖｒｅｆ（図３参照）を入力し（ステップＳ１００）、ＡＤ変換器１０２の出力電圧Ｖａｄ（例えばＶＤＤＡ）と参照電圧Ｖｒｅｆ（例えばＶＡ）とを関連づけ、記憶部２０に記憶する（ステップＳ１０１）。 First, during calibration, according to the operation instruction of the control signal S0, the calculation unit 104 inputs a known reference voltage Vref (see FIG. 3) from the terminal O10 (step S100), and the output voltage Vad of the AD converter 102 (for example, VDDA) and a reference voltage Vref (for example, VA) are associated and stored in the storage unit 20 (step S101).
　次に、計算部１０４は所定数の電圧（例えばＶＡ、ＶＢ）が入力されたか否かを判定する（Ｓ１０２）。所定数でないと判定する場合（Ｓ１０２のＮＯ）、御信号Ｓ０の動作指示にしたがい、異なる参照電圧Ｖｒｅｆ（例えばＶＢ）に変更され、ステップＳ１００からの処理をくり返す。 Next, the calculation unit 104 determines whether or not a predetermined number of voltages (eg VA, VB) have been input (S102). If it is determined that the number is not the predetermined number (NO in S102), the reference voltage Vref (for example, VB) is changed according to the operation instruction of the control signal S0, and the process from step S100 is repeated.
　一方で、計算部１０４は、所定数であると判定する場合（Ｓ１０２のＹＥＳ）、記憶部２０に記憶する出力電圧Ｖａｄ（例えばＶＤＤＡ、ＶＤＤＢ）と参照電圧Ｖｒｅｆ（例えばＶＡ、ＶＢ）を用いて電圧変換式Ｅｑ１０（（１）式参照）を演算する。このとき、計算部１０４は、測定温度Ｔｅ（例えば２０度）と電圧変換式Ｅｑ１０を関連づけて記憶部２０に記憶する。このように、計算部１０４は、測定温度Ｔｅ（例えば２０度）に関連づけられた電圧変換式Ｅｑ１０を演算することが可能である。 On the other hand, if the calculation unit 104 determines that the number is the predetermined number (YES in S102), the calculation unit 104 uses the output voltage Vad (for example, VDDA, VDDB) and the reference voltage Vref (for example, VA, VB) stored in the storage unit 20 to A voltage conversion formula Eq10 (see formula (1)) is calculated. At this time, the calculation unit 104 associates the measured temperature Te (for example, 20 degrees) with the voltage conversion equation Eq10 and stores them in the storage unit 20 . Thus, the calculator 104 can calculate the voltage conversion equation Eq10 associated with the measured temperature Te (eg, 20 degrees).
　図１１は、補正係数（（３）式参照）の生成処理例を示すフロ－チャートである。ここでは、電圧測定装置１が温度制御装置内に配置され、外部の制御装置の制御信号Ｓ０にしたがい制御される場合を説明する。また、計算部１０４の演算処理例として説明するが、外部装置で同様の処理を行ってもよい。 FIG. 11 is a flow chart showing an example of processing for generating correction coefficients (see formula (3)). Here, the case where the voltage measuring device 1 is arranged in the temperature control device and controlled according to the control signal S0 of the external control device will be described. Further, although an example of arithmetic processing by the calculation unit 104 is described, similar processing may be performed by an external device.
　まず、温度変更時には、制御信号Ｓ０の動作指示にしたがい、計算部１０４は、特定の測定電圧ＶＤＤＸ（例えばＶＤＤ１）を入力し（ステップＳ２００）、ＡＤ変換器１０２の出力電圧Ｖａｄを、電圧変換式Ｅｑ１０を用いて測定電圧ＶＤＤＸａに変換する演算を行う（ステップＳ２０１）。続けて計算部１０４は、測定電圧ＶＤＤＸａと測定温度Ｔｅとを関連づけ、記憶部２０に記憶する（ステップＳ２０２）。 First, when changing the temperature, according to the operation instruction of the control signal S0, the calculation unit 104 inputs a specific measurement voltage VDDX (for example, VDD1) (step S200), converts the output voltage Vad of the AD converter 102 into a voltage conversion formula Using Eq10, an operation is performed to convert to the measured voltage VDDXa (step S201). Subsequently, the calculation unit 104 associates the measured voltage VDDXa with the measured temperature Te, and stores them in the storage unit 20 (step S202).
　次に、計算部１０４は所定数の測定温度Ｔｅに対する演算がされたか否かを判定する（ステップＳ２０３）。所定数でないと判定する場合（Ｓ２０３のＮＯ）、制御信号Ｓ０の動作指示にしたがい、電圧測定装置１は異なる温度（ステップＳ２０４）に変更され、ステップＳ２００からの処理をくり返す。 Next, the calculation unit 104 determines whether or not calculations have been performed for a predetermined number of measured temperatures Te (step S203). If it is determined that the number is not the predetermined number (NO in S203), the voltage measuring device 1 is changed to a different temperature (step S204) according to the operation instruction of the control signal S0, and the process from step S200 is repeated.
　一方で、計算部１０４は、所定数であると判定する場合（Ｓ２０３のＹＥＳ）、記憶部２０に記憶する測定電圧ＶＤＤＸａと測定温度Ｔｅとを用いて電圧の線形近似式（（２）式）を演算する（ステップＳ２０５）。このとき、計算部１０４は線形近似式（（２）式）を記憶部２０に記憶する。 On the other hand, if the calculation unit 104 determines that the number is equal to the predetermined number (YES in S203), the calculation unit 104 uses the measured voltage VDDXa and the measured temperature Te stored in the storage unit 20 to obtain a voltage linear approximation formula (formula (2)). is calculated (step S205). At this time, the calculation unit 104 stores the linear approximation formula (formula (2)) in the storage unit 20 .
　次に、計算部１０４は、線形近似式（（２）式）と、電圧変換式Ｅｑ１０に関連づけられた測定温度Ｔｅ（例えば２０度）を用いて、補正係数Ｔａｂ２０（Ｔｅ）（（３）式）を演算し、電圧変換式Ｅｑ１０に関連づけて記憶部２０に記憶する。このように、計算部１０４は、電圧変換式Ｅｑ１０に関連づけられた補正係数Ｔａｂ２０（Ｔｅ）を演算することが可能である。 Next, the calculation unit 104 uses the linear approximation formula (formula (2)) and the measured temperature Te (for example, 20 degrees) associated with the voltage conversion formula Eq10 to calculate the correction coefficient Tab20(Te) (formula (3) ) is calculated and stored in the storage unit 20 in association with the voltage conversion equation Eq10. Thus, calculation unit 104 can calculate correction coefficient Tab20(Te) associated with voltage conversion equation Eq10.
　図１２は、キャリブレーション終了後の、電圧測定処理例を示すフロ－チャートである。図１２に示すように、まず、抵抗ラダー回路１００に端子Ｏ１０から測定電圧ＶＤＤＸが入力される（ステップＳ３００）。 FIG. 12 is a flow chart showing an example of voltage measurement processing after the end of calibration. As shown in FIG. 12, first, the measurement voltage VDDX is input to the resistance ladder circuit 100 from the terminal O10 (step S300).
　次に、抵抗ラダー回路１００は、測定電圧ＶＤＤＸを分圧し、分圧電圧ＶｓｅｎｓｅをＡＤ変換器１０２に供給する（ステップＳ３０１）。続けて、ＡＤ変換器１０２は、分圧電圧ＶｓｅｎｓｅをＡＤ変換した電圧Ｖａｄを計算部１０４に供給する（ステップＳ３０２）。 Next, the resistance ladder circuit 100 divides the measurement voltage VDDX and supplies the divided voltage Vsense to the AD converter 102 (step S301). Subsequently, the AD converter 102 supplies the voltage Vad obtained by AD-converting the divided voltage Vsense to the calculation unit 104 (step S302).
　次に、計算部１０４は、電圧Ｖａｄを電圧変換式Ｅｑ１０に従い、測定電圧ＶＤＤＸａに変換し、補正部４０に供給する（ステップＳ３０３）。続けて、補正部４０は測定温度Ｔｅを温度センサ１０から取得し（ステップＳ３０４）、測定温度Ｔｅに対応する補正形数Ｔａｂ２０（Ｔｅ）を測定電圧ＶＤＤＸａに乗算して、温度補正した補正電圧ＶＤＤＺを端子Ｏ２０からレジスタに出力する（ステップＳ３０５）。このとき、温度センサ１０も測定温度Ｔｅを端子Ｏ２２からレジスタに出力する。 Next, the calculator 104 converts the voltage Vad into the measured voltage VDDXa according to the voltage conversion formula Eq10, and supplies it to the corrector 40 (step S303). Subsequently, the correction unit 40 acquires the measured temperature Te from the temperature sensor 10 (step S304), multiplies the measured voltage VDDXa by the correction factor Tab20(Te) corresponding to the measured temperature Te, and obtains the temperature-corrected corrected voltage VDDZ. is output from the terminal O20 to the register (step S305). At this time, the temperature sensor 10 also outputs the measured temperature Te from the terminal O22 to the register.
　以上説明したように、本実施形態では、補正部４０が、測定温度Ｔｅに対応する補正係数Ｔａｂ２０（Ｔｅ）を測定電圧ＶＤＤＸａに乗算して、温度補正した補正電圧ＶＤＤＺを生成する。これにより、抵抗ラダー回路１００の抵抗比Ａ：Ｂが温度により変わる場合にも、温度変動を抑制した測定電圧ＶＤＤＸの計測が可能となる。 As described above, in the present embodiment, the correction unit 40 multiplies the measured voltage VDDXa by the correction coefficient Tab20(Te) corresponding to the measured temperature Te to generate the temperature-corrected correction voltage VDDZ. As a result, even when the resistance ratio A:B of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
（第１実施形態の変形例１）
　第１実施形態の変形例１に係る電圧測定装置１は、処理部５０が補正部４０及び計算部１０４の処理を同時行うことが可能である点で、第１実施形態に係る電圧測定装置１と相違する。以下では第１実施形態に係る電圧測定装置１と相違する点を説明する。 (Modification 1 of the first embodiment)
The voltage measuring device 1 according to Modification 1 of the first embodiment is such that the processing unit 50 can perform the processing of the correcting unit 40 and the calculating unit 104 at the same time. differ from Differences from the voltage measuring device 1 according to the first embodiment will be described below.
　図１３は、第１実施形態の変形例１に係る電圧測定装置１の構成例を示すブロック図である。処理部５０を、電圧センサ３０内に構成している点で第１実施形態に係る電圧測定装置１と相違する。処理部５０は、例えば（４）式にしたがい、（１）式と（３）式の処理を同時に行うことが可能である。 FIG. 13 is a block diagram showing a configuration example of the voltage measuring device 1 according to Modification 1 of the first embodiment. It is different from the voltage measuring device 1 according to the first embodiment in that the processing section 50 is configured inside the voltage sensor 30 . The processing unit 50 can simultaneously perform the processes of formulas (1) and (3) according to, for example, formula (4).
　以上説明したように、本実施形態では、処理部５０が、測定温度ＴｅとＡＤ変換器１０２の出力電圧Ｖａｄに基づき、測定温度Ｔｅに応じて出力電圧Ｖａｄを温度補正した補正電圧ＶＤＤＸＺを生成することとした。これにより、処理部５０の構成を簡略化でき、処理速度も速くすることも可能である。 As described above, in the present embodiment, the processing unit 50 generates the corrected voltage VDDXZ by temperature-correcting the output voltage Vad according to the measured temperature Te and the output voltage Vad of the AD converter 102 based on the measured temperature Te and the output voltage Vad of the AD converter 102. I decided to As a result, the configuration of the processing unit 50 can be simplified, and the processing speed can be increased.
（第２実施形態）
　第２実施形態に係る電圧測定装置１は、抵抗ラダー回路１００の２つのノード間の分圧電圧を用いて測定電圧を測定する点で第１実施形態に係る表電圧測定装置１と相違する。以下では、第１実施形態に係る電圧測定装置１と相違する点を説明する。 (Second embodiment)
The voltage measuring device 1 according to the second embodiment differs from the table voltage measuring device 1 according to the first embodiment in that the voltage to be measured is measured using the divided voltage between two nodes of the resistance ladder circuit 100 . Differences from the voltage measuring device 1 according to the first embodiment will be described below.
図１４は、第２実施形態に係る抵抗ラダー回路１００と、ＡＤ変換器１０２の構成例を示す図である。図１４に示すように、第２実施形態に係る抵抗ラダー回路１００は、スイッティング素子１００ｃを更に有する。 FIG. 14 is a diagram showing a configuration example of the resistance ladder circuit 100 and the AD converter 102 according to the second embodiment. As shown in FIG. 14, the resistance ladder circuit 100 according to the second embodiment further has a switching element 100c.
　スイッティング素子１００ｃは、例えばトランジスタであり、制御信号Ｓ０にしたがい、ノードｎ１とノードｎ２との接続を切り換える。なお、本実施形態に係る制御信号Ｓ０は外部の制御装置から入力されるが、これに限定されない。例えば計算部１０４が各回路を制御する制御信号ＳＯを生成してもよい。 The switching element 100c is a transistor, for example, and switches the connection between the node n1 and the node n2 according to the control signal S0. Note that the control signal S0 according to the present embodiment is input from an external control device, but is not limited to this. For example, the calculation unit 104 may generate the control signal SO for controlling each circuit.
　これにより、スイッティング素子１００ｂが導通状態の際に、測定電圧ＶＤＤＸと電圧ＶＳＳとの電圧は、
抵抗ラダー回路１００の抵抗１００ａにより分圧される。これにより、ノードｎ１から電圧ＶＤ１が出力され、ノードｎ２から電圧ＶＤ２が出力される。ＡＤ変換器１０２は、電圧ＶＤ１を電圧Ｖａｄ１に変換する。同様に、ＡＤ変換器１０２は、電圧ＶＤ２を電圧Ｖａｄ２に変換する。 As a result, when the switching element 100b is in a conductive state, the voltages of the measurement voltage VDDX and the voltage VSS are
The voltage is divided by the resistor 100 a of the resistor ladder circuit 100 . As a result, the voltage VD1 is output from the node n1, and the voltage VD2 is output from the node n2. AD converter 102 converts voltage VD1 to voltage Vad1. Similarly, AD converter 102 converts voltage VD2 to voltage Vad2.
　図１５は、抵抗ラダー回路１００の抵抗比Ａ：Ｂ：Ｃを示す図である。すなわち、端子Ｏ１０とノードｎ１との間の抵抗Ａと、ノードｎ１とノードｎ２の間の抵抗Ｂと、ノードｎ２と素子１００ｂとの間の抵抗Ｃと、の比を示す。温度が例えば－４０度から１２５度に変化すると抵抗比Ａ：Ｂ：Ｃは、Ａ‘：Ｂ’：Ｃ‘に変化する。これにより、電圧ＶＤ１、ＶＤ２も電圧ＶＤ１’、ＶＤ２‘に変化する。 FIG. 15 is a diagram showing the resistance ratio A:B:C of the resistance ladder circuit 100. FIG. That is, it represents the ratio of the resistance A between the terminal O10 and the node n1, the resistance B between the node n1 and the node n2, and the resistance C between the node n2 and the element 100b. When the temperature changes, for example, from -40 degrees to 125 degrees, the resistance ratio A:B:C changes to A':B':C'. As a result, the voltages VD1 and VD2 also change to voltages VD1' and VD2'.
－４０度から１２５度に変化させたときの抵抗ラダー出力の変化率Ｒ（5式）は、VDDXが異なる値でも同じ値となる。 The rate of change R (equation 5) of the resistance ladder output when changing from -40 degrees to 125 degrees is the same value even if VDDX is different.
　図１６は、電圧Ｖａｄ１、Ｖａｄ２の温度特性例を示す図である。（ａ）図は、電圧Ｖａｄ１、Ｖａｄ２の線形近似特性を示す図である。横軸は温度を示し、縦軸はＡＤ変換器１０２の出力電圧をしめす。ラインＬＶ４０ａ（Ｔｅ）は、電圧Ｖａｄ１の温度変化を線形近似した特性である。一方で、ラインＬＶ４０ｂ（Ｔｅ）は、電圧Ｖａｄ２の温度変化を線形近似した特性である。第１実施形態の（２）式と同様に、ノードｎ１とノードｎ２の出力電圧の温度変化は、（６）、（７）式で示す様に線形近似することが可能である。
Ｋ４０ａ、Ｋ４０ｂは、測定温度Ｔｅが０度のときの切片の値であり、Ｋ４２ａ、Ｋ４２ｂは傾きである。 FIG. 16 is a diagram showing an example of temperature characteristics of voltages Vad1 and Vad2. (a) is a diagram showing linear approximation characteristics of voltages Vad1 and Vad2. The horizontal axis indicates temperature, and the vertical axis indicates the output voltage of AD converter 102 . A line LV40a (Te) is a characteristic linearly approximating the temperature change of the voltage Vad1. On the other hand, the line LV40b (Te) is a characteristic linearly approximating the temperature change of the voltage Vad2. Similar to equation (2) in the first embodiment, temperature changes in the output voltages of nodes n1 and n2 can be linearly approximated as shown in equations (6) and (7).
K40a and K40b are intercept values when the measured temperature Te is 0 degrees, and K42a and K42b are slopes.
　（ｂ）図は、線形近似線ラインＬＶ４０ａ（Ｔｅ）の補正係数Ｔａｂ４０１と、線形近似線ラインＬＶ４０ｂ（Ｔｅ）の補正係数Ｔａｂ４０２とを示す図である。第１実施形態の（３）式と同様に、（８）、（９）式で示す様に補正係数Ｔａｂ４０１、Ｔａｂ４０２を演算可能である。
(b) is a diagram showing a correction coefficient Tab401 for the linear approximation line LV40a (Te) and a correction coefficient Tab402 for the linear approximation line LV40b (Te). Correction coefficients Tab401 and Tab402 can be calculated as shown in equations (8) and (9), like equation (3) in the first embodiment.
　これらか分かる様に、電圧Ｖａｄ１と電圧Ｖａｄ２との差分電圧Ｖａｄ３＝Ｖａｄ１－Ｖａｄ２は、補正係数Ｔａｂ４０１、Ｔａｂ４０２により温度補正可能である。そこで、本実施形態では、Ｖａｄ３に対して（１）式と同様に電圧変換式Ｅｑ３００を（１０）式として生成する。ここで、ＶＡ４０は、端子Ｏ１０に電圧ＶＤＤＡを供給した時の電圧Ｖａｄ３であり、ＶＢ４０は、端子Ｏ１０に電圧ＶＤＤＢを供給した時の電圧Ｖａｄ３である。
As can be seen from these, the differential voltage Vad3=Vad1−Vad2 between the voltage Vad1 and the voltage Vad2 can be temperature corrected by the correction coefficients Tab401 and Tab402. Therefore, in the present embodiment, the voltage conversion equation Eq300 is generated as equation (10) for Vad3 in the same manner as equation (1). Here, VA40 is the voltage Vad3 when the voltage VDDA is supplied to the terminal O10, and VB40 is the voltage Vad3 when the voltage VDDB is supplied to the terminal O10.
　図１７は、電圧Ｖａｄ３の温度特性例を示す図である。（ａ）図は、電圧Ｖａｄ３の線形近似特性を示す図である。横軸は温度を示し、縦軸はＡＤ変換器１０２の出力に基づく差分電圧Ｖａｄ３をしめす。ラインＬＶ３００（Ｔｅ）は、電圧Ｖａｄ３の温度変化を線形近似した特性である。第１実施形態の（２）式と同様に、ノードｎ１とノードｎ２の出力電圧の差分電圧の温度変化は、（１１）式で示す様に線形近似することが可能である。（６）、（７）式を参照すると、例えばＫ３００ａは、（Ｋ４０ａ－Ｋ４０ｂ）に対応し、Ｋ３００ｂは、（Ｋ４２ａ－Ｋ４２ｂ）に対応する。
FIG. 17 is a diagram showing an example of temperature characteristics of the voltage Vad3. (a) is a diagram showing a linear approximation characteristic of the voltage Vad3. The horizontal axis indicates temperature, and the vertical axis indicates differential voltage Vad3 based on the output of AD converter 102 . A line LV300 (Te) is a characteristic linearly approximating the temperature change of the voltage Vad3. As with the equation (2) of the first embodiment, the temperature change of the differential voltage between the output voltages of the nodes n1 and n2 can be linearly approximated as shown in the equation (11). Referring to equations (6) and (7), for example, K300a corresponds to (K40a-K40b) and K300b corresponds to (K42a-K42b).
　このときの電圧変換式Ｅｑ３００（（１０）式参照）の演算時の温度が４０度であれば、４０度に対応する近似電圧ＬＶ３００ａ（Ｔｅ＝４０）で（１１）式を除算すると（１２）式で示す補正係数Ｔａｂ３００（Ｔe）が演算される。このように、測定温度Ｔｅに対する補正係数Ｔａｂ３００（Ｔe）が演算される。 If the temperature at the time of calculation of the voltage conversion formula Eq300 (see formula (10)) at this time is 40 degrees, dividing the formula (11) by the approximate voltage LV300a (Te=40) corresponding to 40 degrees yields (12) A correction coefficient Tab300(Te) shown in the formula is calculated. Thus, the correction coefficient Tab300(Te) for the measured temperature Te is calculated.
　本実施形態に係る計算部１０４は、差分電圧Ｖａｄ３＝Ｖａｄ１－Ｖａｄ２を演算し、電圧変換式Ｅｑ３００（１０式を参照）を用いて測定電圧ＶＤＤＸａを生成する。補正部４０は、測定温度Ｔｅを用いて、（１１）式の補正係数Ｔａｂ３００（Ｔｅ）により測定電圧ＶＤＤＸａを補正し、補正電圧ＶＤＤＺを生成する。 The calculation unit 104 according to the present embodiment calculates the difference voltage Vad3=Vad1−Vad2 and generates the measurement voltage VDDXa using the voltage conversion formula Eq300 (see formula 10). Using the measured temperature Te, the correction unit 40 corrects the measured voltage VDDXa with the correction coefficient Tab300(Te) of the equation (11) to generate the corrected voltage VDDZ.
　以上説明したように、本実施形態では、抵抗ラダー回路１００のノードｎ１とノードｎ２との間の分圧Ｖａｄ３に対して、計算部１０４が電圧変換式Ｅｑ３００（１０式を参照）を用いて測定電圧測定電圧ＶＤＤＸａ生成し、補正部４０は、測定温度Ｔｅを用いて、（１１）式の補正係数Ｔａｂ３００（Ｔｅ）により測定電圧ＶＤＤＸａを補正し、補正電圧ＶＤＤＺを生成することとした。これにより、抵抗ラダー回路１００の抵抗比Ａ：Ｂ：Ｃが温度により変わる場合にも、温度変動を抑制した測定電圧ＶＤＤＸの計測が可能となる。 As described above, in the present embodiment, the calculation unit 104 measures the divided voltage Vad3 between the node n1 and the node n2 of the resistance ladder circuit 100 using the voltage conversion formula Eq300 (see formula 10). The voltage measurement voltage VDDXa is generated, and the correction unit 40 corrects the measurement voltage VDDXa with the correction coefficient Tab300(Te) of the equation (11) using the measurement temperature Te to generate the correction voltage VDDZ. As a result, even when the resistance ratio A:B:C of the resistance ladder circuit 100 varies with temperature, it is possible to measure the measurement voltage VDDX while suppressing temperature fluctuations.
なお、本技術は以下のような構成を取ることができる。 In addition, this technique can take the following structures.
（１）
　複数の抵抗が直列に接続される抵抗ラダー回路と、
　前記抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換部と、
　前記デジタル値を測定温度に従い補正する処理部と、
　を備える、電圧測定装置。 (1)
a resistor ladder circuit in which a plurality of resistors are connected in series;
a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value;
a processing unit that corrects the digital value according to the measured temperature;
A voltage measuring device.
（２）
　前記処理部は、
　前記デジタル値に対して、所定の電圧変換計算処理により第１測定電圧を計算する計算部と、
　前記第１測定電圧を前記測定温度に従い補正する補正部と、
　を有する、（１）に記載の電圧測定装置。 (2)
The processing unit is
a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value;
a correction unit that corrects the first measured voltage according to the measured temperature;
The voltage measuring device according to (1), comprising:
（３）
　前記補正部は、前記測定温度に対して定まる補正係数に基づき、前記第１測定電圧を補正する、（２）に記載の電圧測定装置。 (3)
The voltage measuring device according to (2), wherein the correcting unit corrects the first measured voltage based on a correction coefficient determined with respect to the measured temperature.
（４）
　前記補正係数は、前記抵抗ラダー回路の温度を変更させた場合の前記第１測定電圧を、所定の温度における前記第１測定電圧に近づける係数である、（３）に記載の電圧測定装置。 (4)
The voltage measuring device according to (3), wherein the correction coefficient is a coefficient that approximates the first measured voltage when the temperature of the resistance ladder circuit is changed to the first measured voltage at a predetermined temperature.
（５）
　前記補正部の補正処理を規定する数式、及び変換テーブの少なくとも一方を記憶する記憶部を更に備え、
　前記補正部は、前記記憶部に記憶される前記数式、及び前記変換テーブの少なくとも一方に基づき、前記補正を行う、（４）に記載の電圧測定装置。 (5)
Further comprising a storage unit that stores at least one of a formula that defines the correction process of the correction unit and a conversion table,
The voltage measuring device according to (4), wherein the correcting unit performs the correction based on at least one of the formula stored in the storage unit and the conversion table.
（６）
　前記記憶部は、前記電圧変換計算処理を規定する第２数式、及び第２変換テーブの少なくとも一方を更に記憶し、
　前記計算部は、前記記憶部に記憶される前記第２数式、及び前記第２変換テーブの少なくとも一方に基づき、前記電圧変換計算処理を行う、（５）に記載の電圧測定装置。 (6)
The storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table,
The voltage measurement device according to (5), wherein the calculation unit performs the voltage conversion calculation process based on at least one of the second formula stored in the storage unit and the second conversion table.
（７）
　前記処理部は、
　前記デジタル値に対して、所定の電圧変換計算処理による第１測定電圧を
　前記測定温度に従い補正する、（１）に記載の電圧測定装置。 (7)
The processing unit is
The voltage measuring device according to (1), wherein a first measured voltage obtained by a predetermined voltage conversion calculation process is corrected for the digital value according to the measured temperature.
（８）
　前記分圧電圧は、前記抵抗ラダー回路の基準電圧と、前記複数の抵抗の所定の接続点との間の電圧である、（１）に記載の電圧測定装置。 (8)
The voltage measuring device according to (1), wherein the divided voltage is a voltage between a reference voltage of the resistor ladder circuit and a predetermined connection point of the plurality of resistors.
（９）
　前記分圧電圧は、前記複数の抵抗の所定の第1接続点と第２接続点との間の電圧である、（１）に記載の電圧測定装置。 (9)
The voltage measuring device according to (1), wherein the divided voltage is a voltage between a predetermined first connection point and a second connection point of the plurality of resistors.
（１０）
　前記測定温度を測定する温度センサを更に備える、（１）に記載の電圧測定装置。 (10)
The voltage measuring device according to (1), further comprising a temperature sensor that measures the measured temperature.
（１１）
　抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換工程と、
　前記デジタル値を温度センサの測定温度に従い補正する演算工程と、
　を備える、電圧測定方法。 (11)
a conversion step of converting the divided voltage divided by the resistor ladder circuit into a digital value;
a calculation step of correcting the digital value according to the temperature measured by the temperature sensor;
A voltage measurement method, comprising:
（１２）
　複数の既知の測定電圧を前記抵抗ラダー回路により分圧して複数のデジタル値に変換する変換工程と、
　前記複数のデジタル値と前記複数の既知の測定電圧とを対応させる電圧変換式を生成する工程を更にそなえる、（１１）に記載の電圧測定方法。 (12)
a conversion step of dividing a plurality of known measured voltages by the resistor ladder circuit and converting them into a plurality of digital values;
The voltage measurement method according to (11), further comprising the step of generating a voltage conversion formula that associates the plurality of digital values with the plurality of known measurement voltages.
（１３）
　前記演算工程は、
　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
　前記第１測定電圧を測定温度に従い補正する補正工程と、を有する、（１１）に記載の電圧測定方法。 (13)
The computing step is
converting to a first measured voltage based on the voltage conversion formula;
and a correction step of correcting the first measured voltage according to the measured temperature.
（１４）
　所定の測定電圧を前記抵抗ラダー回路の温度を変更して、前記電圧変換式に基づき複数の第１測定電圧に変換する工程と、
　前記複数の第１測定電圧を所定温度の測定電圧に近づける、測定温度に対応する補正係数を生成する工程と、を更にそなえる、（１１）に記載の電圧測定方法。 (14)
converting a predetermined measured voltage into a plurality of first measured voltages based on the voltage conversion equation by changing the temperature of the resistor ladder circuit;
The voltage measurement method according to (11), further comprising: generating a correction factor corresponding to the measured temperature for bringing the plurality of first measured voltages closer to the measured voltage at the predetermined temperature.
（１５）
　前記演算工程は、
　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
　前記第１測定電圧を測定温度に対応する補正係数に従い補正する補正工程と、を有する、（１４）に記載の電圧測定方法。 (15)
The computing step is
converting to a first measured voltage based on the voltage conversion formula;
and a correction step of correcting the first measured voltage according to a correction coefficient corresponding to the measured temperature.
本開示の態様は、上述した個々の実施形態に限定されるものではなく、当業者が想到しうる種々の変形も含むものであり、本開示の効果も上述した内容に限定されない。すなわち、特許請求の範囲に規定された内容およびその均等物から導き出される本開示の概念的な思想と趣旨を逸脱しない範囲で種々の追加、変更および部分的削除が可能である。 Aspects of the present disclosure are not limited to the individual embodiments described above, but include various modifications that can be conceived by those skilled in the art, and the effects of the present disclosure are not limited to the above-described contents. That is, various additions, changes, and partial deletions are possible without departing from the conceptual idea and spirit of the present disclosure derived from the content defined in the claims and equivalents thereof.
１：電圧測定装置、１０：温度センサ１０：記憶部、４０：補正部、５０：処理部、１００：抵抗ラダー回路、１０２：ＡＤ変換器（変換部）、１０４：計算部。 1: Voltage measuring device, 10: Temperature sensor 10: Storage unit, 40: Correction unit, 50: Processing unit, 100: Resistance ladder circuit, 102: AD converter (conversion unit), 104: Calculation unit.

Claims (15)

  1. 　複数の抵抗が直列に接続される抵抗ラダー回路と、
    　前記抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換部と、
    　前記デジタル値を測定温度に従い補正する処理部と、
    　を備える、電圧測定装置。     a resistor ladder circuit in which a plurality of resistors are connected in series;
    a conversion unit that converts the divided voltage divided by the resistor ladder circuit into a digital value;
    a processing unit that corrects the digital value according to the measured temperature;
    A voltage measuring device.
  2. 　前記処理部は、
    　前記デジタル値に対して、所定の電圧変換計算処理により第１測定電圧を計算する計算部と、
    　前記第１測定電圧を前記測定温度に従い補正する補正部と、
    　を有する、請求項１に記載の電圧測定装置。     The processing unit is
    a calculation unit for calculating a first measurement voltage by a predetermined voltage conversion calculation process for the digital value;
    a correction unit that corrects the first measured voltage according to the measured temperature;
    The voltage measuring device according to claim 1, comprising:
  3. 　前記補正部は、前記測定温度に対して定まる補正係数に基づき、前記第１測定電圧を補正する、請求項２に記載の電圧測定装置。 The voltage measuring device according to claim 2, wherein the correction unit corrects the first measured voltage based on a correction coefficient determined with respect to the measured temperature.
  4. 　前記補正係数は、前記抵抗ラダー回路の温度を変更させた場合の前記第１測定電圧を、所定の温度における前記第１測定電圧に近づける係数である、請求項３に記載の電圧測定装置。 4. The voltage measuring device according to claim 3, wherein the correction coefficient is a coefficient that brings the first measured voltage when the temperature of the resistance ladder circuit is changed closer to the first measured voltage at a predetermined temperature.
  5. 　前記補正部の補正処理を規定する数式、及び変換テーブの少なくとも一方を記憶する記憶部を更に備え、
    　前記補正部は、前記記憶部に記憶される前記数式、及び前記変換テーブの少なくとも一方に基づき、前記補正を行う、請求項４に記載の電圧測定装置。     Further comprising a storage unit that stores at least one of a formula that defines the correction process of the correction unit and a conversion table,
    5. The voltage measuring device according to claim 4, wherein said correcting section performs said correction based on at least one of said formula stored in said storage section and said conversion table.
  6. 　前記記憶部は、前記電圧変換計算処理を規定する第２数式、及び第２変換テーブの少なくとも一方を更に記憶し、
    　前記計算部は、前記記憶部に記憶される前記第２数式、及び前記第２変換テーブの少なくとも一方に基づき、前記電圧変換計算処理を行う、請求項５に記載の電圧測定装置。     The storage unit further stores at least one of a second mathematical expression that defines the voltage conversion calculation process and a second conversion table,
    6. The voltage measuring device according to claim 5, wherein said calculation section performs said voltage conversion calculation processing based on at least one of said second mathematical expression stored in said storage section and said second conversion table.
  7. 　前記処理部は、
    　前記デジタル値に対して、所定の電圧変換計算処理による第１測定電圧を
    　前記測定温度に従い補正する、請求項１に記載の電圧測定装置。     The processing unit is
    2. The voltage measuring device according to claim 1, wherein the first measured voltage obtained by a predetermined voltage conversion calculation process is corrected with respect to the digital value according to the measured temperature.
  8. 　前記分圧電圧は、前記抵抗ラダー回路の基準電圧と、前記複数の抵抗の所定の接続点との間の電圧である、請求項１に記載の電圧測定装置。 2. The voltage measuring device according to claim 1, wherein said divided voltage is a voltage between a reference voltage of said resistor ladder circuit and a predetermined connection point of said plurality of resistors.
  9. 　前記分圧電圧は、前記複数の抵抗の所定の第1接続点と第２接続点との間の電圧である、請求項１に記載の電圧測定装置。 2. The voltage measuring device according to claim 1, wherein said divided voltage is a voltage between a predetermined first connection point and a second connection point of said plurality of resistors.
  10. 　前記測定温度を測定する温度センサを更に備える、請求項１に記載の電圧測定装置。 The voltage measuring device according to claim 1, further comprising a temperature sensor that measures the measured temperature.
  11. 　抵抗ラダー回路により分圧された分圧電圧をデジタル値に変換する変換工程と、
    　前記デジタル値を温度センサの測定温度に従い補正する演算工程と、
    　を備える、電圧測定方法。     a conversion step of converting the divided voltage divided by the resistor ladder circuit into a digital value;
    a calculation step of correcting the digital value according to the temperature measured by the temperature sensor;
    A voltage measurement method, comprising:
  12. 　複数の既知の測定電圧を前記抵抗ラダー回路により分圧して複数のデジタル値に変換する変換工程と、
    　前記複数のデジタル値と前記複数の既知の測定電圧とを対応させる電圧変換式を生成する工程を更にそなえる、請求項１１に記載の電圧測定方法。     a conversion step of dividing a plurality of known measured voltages by the resistor ladder circuit and converting them into a plurality of digital values;
    12. The voltage measurement method of claim 11, further comprising generating a voltage transformation equation that associates the plurality of digital values with the plurality of known measured voltages.
  13. 　前記演算工程は、
    　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
    　前記第１測定電圧を測定温度に従い補正する補正工程と、を有する、請求項１１に記載の電圧測定方法。     The computing step is
    converting to a first measured voltage based on the voltage conversion formula;
    12. The voltage measuring method according to claim 11, comprising a correcting step of correcting the first measured voltage according to the measured temperature.
  14. 　所定の測定電圧を前記抵抗ラダー回路の温度を変更して、前記電圧変換式に基づき複数の第１測定電圧に変換する工程と、
    　前記複数の第１測定電圧を所定温度の測定電圧に近づける、測定温度に対応する補正係数を生成する工程と、を更にそなえる、請求項１１に記載の電圧測定方法。     converting a predetermined measured voltage into a plurality of first measured voltages based on the voltage conversion equation by changing the temperature of the resistor ladder circuit;
    12. The voltage measurement method of claim 11, further comprising generating a correction factor corresponding to the measured temperature to bring the plurality of first measured voltages closer to the measured voltage at a predetermined temperature.
  15. 　前記演算工程は、
    　前記電圧変換式に基づき、第１測定電圧に変換する工程と、
    　前記第１測定電圧を測定温度に対応する補正係数に従い補正する補正工程と、を有する、請求項１４に記載の電圧測定方法。     The computing step is
    converting to a first measured voltage based on the voltage conversion formula;
    15. The voltage measuring method according to claim 14, comprising correcting the first measured voltage according to a correction factor corresponding to the measured temperature.
PCT/JP2023/001471 2022-02-17 2023-01-19 Voltage measurement device and voltage measurement method WO2023157548A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289037A (en) * 1997-04-11 1998-10-27 Matsushita Electric Ind Co Ltd Battery voltage monitoring device and wireless printer
US20160274149A1 (en) * 2012-11-16 2016-09-22 Alstom Technology Ltd. Very high-voltage dc line voltage sensor
CN211955635U (en) * 2019-12-12 2020-11-17 联合汽车电子有限公司 Direct current bus voltage detection circuit, dc-to-ac converter and electric automobile

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289037A (en) * 1997-04-11 1998-10-27 Matsushita Electric Ind Co Ltd Battery voltage monitoring device and wireless printer
US20160274149A1 (en) * 2012-11-16 2016-09-22 Alstom Technology Ltd. Very high-voltage dc line voltage sensor
CN211955635U (en) * 2019-12-12 2020-11-17 联合汽车电子有限公司 Direct current bus voltage detection circuit, dc-to-ac converter and electric automobile

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