WO2023155130A1 - 一种声表面波谐振器、声学滤波器及电子设备 - Google Patents

一种声表面波谐振器、声学滤波器及电子设备 Download PDF

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Publication number
WO2023155130A1
WO2023155130A1 PCT/CN2022/076828 CN2022076828W WO2023155130A1 WO 2023155130 A1 WO2023155130 A1 WO 2023155130A1 CN 2022076828 W CN2022076828 W CN 2022076828W WO 2023155130 A1 WO2023155130 A1 WO 2023155130A1
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Prior art keywords
dielectric layer
layer
acoustic wave
surface acoustic
wave resonator
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PCT/CN2022/076828
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English (en)
French (fr)
Inventor
张本锋
黄裕霖
李昕熠
高宗智
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华为技术有限公司
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Priority to PCT/CN2022/076828 priority Critical patent/WO2023155130A1/zh
Priority to CN202280015710.4A priority patent/CN116982259A/zh
Publication of WO2023155130A1 publication Critical patent/WO2023155130A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Definitions

  • the present application relates to the technical field of semiconductors, in particular to a surface acoustic wave resonator, an acoustic filter and electronic equipment.
  • the acoustic filter is an important part in the mobile communication system.
  • Embodiments of the present application provide a surface acoustic wave resonator, an acoustic filter and electronic equipment, which can improve the performance of the acoustic filter.
  • a surface acoustic wave resonator in a first aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; The grid structure is used to suppress the stray resonance of the surface acoustic wave resonator; wherein, the sound velocity of the first medium layer is lower
  • the surface acoustic wave resonator provided by this application in addition to including interdigital transducers, piezoelectric material layers, first dielectric layer and second dielectric layer, also includes a grid structure, because the grid structure is used to suppress the surface acoustic wave
  • the spurious resonance of the resonator can thus improve the out-of-band rejection of the acoustic filter, improve the performance of the surface acoustic wave resonator and the performance of the acoustic filter.
  • the reason why the grid structure can suppress the stray resonance of the surface acoustic wave resonator is that the grid structure destroys the periodicity of sound wave propagation in the surface acoustic wave resonator, so the stray resonance of the surface acoustic wave resonator can be suppressed.
  • the grid structure is disposed in the first medium layer. Since the stray resonance of the surface acoustic wave resonator mainly occurs in the first dielectric layer, setting the grid structure in the first dielectric layer can suppress the stray resonance of the surface acoustic wave resonator more effectively.
  • the grid structure includes a plurality of grids arranged in sequence along the first direction.
  • the plurality of grids can more effectively break the periodicity of the sound wave propagating in the first dielectric layer, and thus can more effectively suppress the spurious resonance of the surface acoustic wave resonator.
  • the grid structure is used to suppress the stray resonance of the surface acoustic wave resonator by suppressing the stray resonance in the first dielectric layer. That is to say, the acoustic wave will generate stray resonance in the first dielectric layer, and the grid structure suppresses the stray resonance in the first dielectric layer, thereby suppressing the stray resonance of the surface acoustic wave resonator.
  • the grid structure is arranged in the first dielectric layer, and is connected with the surface of the first dielectric layer close to the piezoelectric material layer (that is, the upper surface of the first dielectric layer) and the first dielectric layer.
  • the surfaces close to the second dielectric layer ie, the lower surface of the first dielectric layer
  • the grid structure can effectively destroy the periodicity of sound waves propagating in the first dielectric layer, thereby effectively suppressing Stray resonances in the first dielectric layer.
  • the grid structure is arranged on the side of the first dielectric layer close to the surface of the piezoelectric material layer (that is, the upper surface of the first dielectric layer), and the grid structure is in contact with the first film layer.
  • the first film layer is a film layer in contact with the surface of the first dielectric layer close to the piezoelectric material layer. The position of the grid structure can be flexibly set as required.
  • the first film layer is a piezoelectric material layer.
  • the grid structure is arranged on the side of the first dielectric layer close to the surface of the second dielectric layer (that is, the lower surface of the first dielectric layer), and the grid structure is in contact with the second film layer.
  • the second film layer is a film layer in contact with the surface of the first dielectric layer close to the second dielectric layer. The position of the grid structure can be flexibly set as required.
  • the second film layer is a second dielectric layer.
  • the grid extends along a second direction; wherein, the second direction is perpendicular to the first direction, and the second direction is parallel to the piezoelectric material layer.
  • the raster is a continuous whole.
  • the grid includes a plurality of mutually disconnected grid units arranged in sequence along a second direction; wherein, the second direction is perpendicular to the first direction, and the second direction is parallel to the piezoelectric material layer .
  • the grid is non-continuous along the second direction.
  • the shape of the grid along a cross section perpendicular to the first dielectric layer is rectangle, trapezoid or triangle.
  • the shape of the grid along the cross-section perpendicular to the first dielectric layer can be selected as required, thereby enriching the design freedom.
  • the shape of the grid along the cross section perpendicular to the first dielectric layer is trapezoidal or triangular, the dependence on process sensitivity can be reduced when manufacturing the grid.
  • the surface acoustic wave resonator further includes at least one third dielectric layer, and the third dielectric layer is arranged between the first dielectric layer and the second dielectric layer; the sound velocity of the third dielectric layer is greater than or It is equal to the sound velocity of the first medium layer and less than or equal to the sound velocity of the second medium layer. Since the surface acoustic wave resonator includes a third dielectric layer, it can achieve better compatibility with the process. For example, in the case of poor adhesion between the first dielectric layer and the second dielectric layer, the second dielectric layer can be selected. The material of the three dielectric layers has good adhesion to both the first dielectric layer and the second dielectric layer, thereby improving process compatibility. Furthermore, when the surface acoustic wave resonator includes the third dielectric layer, the degree of freedom in design can also be enriched.
  • one of the temperature frequency coefficient of the first dielectric layer and the temperature frequency coefficient of the piezoelectric material layer is a positive number, and the other is a negative number. Since one of the temperature frequency coefficient of the first dielectric layer and the temperature frequency coefficient of the piezoelectric material layer is a positive number and the other is a negative number, when the temperature rises, the vibration frequency of the piezoelectric material layer and the vibration frequency of the first dielectric layer , one deviates to high frequency, and the other deviates to low frequency. For example, the vibration frequency of the piezoelectric material layer will deviate to low frequency, and the vibration frequency of the first dielectric layer will deviate to high frequency. In this way, the overall SAW resonator The vibration frequency does not shift or shifts less so that the performance of the surface acoustic wave resonator can be improved.
  • the material of the grid structure includes one or more of silicon oxide, silicon nitride, aluminum oxide, aluminum, copper, ruthenium, molybdenum, platinum, and tungsten.
  • the material of the first dielectric layer includes one or more of silicon dioxide, tellurium dioxide or silicon oxyfluoride.
  • the material of the second dielectric layer includes one or more of silicon carbide, diamond, quartz or sapphire.
  • a surface acoustic wave resonator in a second aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; Wherein, the sound velocity of the first medium layer is lower than the sound velocity of the piezoelectric material layer, and the sound velocity of the second medium layer is greater than the
  • the surface acoustic wave resonator provided by this application in addition to including interdigital transducers, piezoelectric material layers, first dielectric layer and second dielectric layer, also includes a grid structure, because the grid structure is arranged on the first dielectric layer , and the grid structure includes a plurality of grids arranged in sequence along the first direction, so the plurality of grids can destroy the periodicity of sound waves propagating in the surface acoustic wave resonator, thereby suppressing the spurious of the surface acoustic wave resonator Resonance, improved out-of-band rejection of acoustic filters, improved performance of surface acoustic wave resonators as well as performance of acoustic filters.
  • a surface acoustic wave resonator in a third aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; Wherein, the sound velocity of the first medium layer is lower than the sound velocity of the piezoelectric material layer, and the sound velocity of the second medium layer is greater than the
  • the film layer is in contact with the surface close to the piezoelectric material layer, and the grid structure is in contact with the first dielectric layer; the grid structure is used to suppress the stray resonance of the surface acoustic wave resonator.
  • the first film layer is a piezoelectric material layer.
  • a surface acoustic wave resonator in a fourth aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer, and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; Wherein, the sound velocity of the first medium layer is lower than the sound velocity of the piezoelectric material layer, and the sound velocity of the second medium layer is greater than
  • the film layer is in contact with the surface close to the second dielectric layer, and the grid structure is in contact with the first dielectric layer; the grid structure is used to suppress the stray resonance of the surface acoustic wave resonator.
  • the second film layer is a second dielectric layer.
  • a surface acoustic wave resonator in a fifth aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer, and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; Wherein, the sound velocity of the first medium layer is lower than the sound velocity of the piezoelectric material layer, and the sound velocity of the second medium layer is greater than
  • the first film layer is a piezoelectric material layer.
  • a surface acoustic wave resonator in a sixth aspect, includes an interdigital transducer, a piezoelectric material layer, a first dielectric layer, a second dielectric layer, and a grid structure; the first dielectric layer is set Above the second dielectric layer; the piezoelectric material layer is disposed above the first dielectric layer; the interdigital transducer is disposed above the piezoelectric material layer, and the interdigital transducer includes first electrodes arranged alternately in sequence along the first direction finger and the second electrode finger; the piezoelectric material layer is used to excite the surface acoustic wave under the action of the interdigital transducer; the second dielectric layer is used to confine the acoustic energy generated by the piezoelectric material layer within the piezoelectric material layer; Wherein, the sound velocity of the first medium layer is lower than the sound velocity of the piezoelectric material layer, and the sound velocity of the second medium layer is greater than
  • the second film layer is a second dielectric layer.
  • an acoustic filter in a seventh aspect, includes a plurality of cascaded surface acoustic wave resonators; wherein, the surface acoustic wave resonators are the first aspect, the second aspect, the third aspect, and the fourth aspect
  • the acoustic filter has the same technical effect as the surface acoustic wave resonator provided in the above first aspect, and reference may be made to the relevant description of the above first aspect, which will not be repeated here.
  • an electronic device in an eighth aspect, includes an acoustic filter, a processor, and a printed circuit board, and the acoustic filter and the processor are both arranged on the printed circuit board; wherein, the acoustic filter provides the above-mentioned seventh aspect acoustic filter.
  • the electronic device has the same technical effect as the surface acoustic wave resonator provided in the above first aspect, and reference may be made to the relevant description of the above first aspect, which will not be repeated here.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of an acoustic filter provided by an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a surface acoustic wave resonator provided in an embodiment of the present application
  • FIG. 4 is a schematic structural diagram of an interdigital transducer and a reflection grid provided by an embodiment of the present application
  • FIG. 5 is a schematic structural diagram of a surface acoustic wave resonator provided in the related art
  • FIG. 6 is an admittance curve diagram corresponding to the surface acoustic wave resonator shown in FIG. 5;
  • Fig. 7 is the displacement field distribution diagram of each layer in the surface acoustic wave resonator shown in Fig. 5;
  • FIG. 8 is an admittance curve diagram corresponding to the surface acoustic wave resonator shown in FIG. 3;
  • FIG. 9 is an admittance curve corresponding to the surface acoustic wave resonator shown in FIG. 3 and an admittance curve corresponding to the surface acoustic wave resonator shown in FIG. 5;
  • Fig. 10 is the displacement field distribution diagram of each layer in the surface acoustic wave resonator shown in Fig. 3;
  • Fig. 11a is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 11b is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 12a is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 12b is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 12c is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 12d is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 13a is a schematic structural diagram of a grid structure provided by an embodiment of the present application.
  • Fig. 13b is a schematic structural diagram of a grid structure provided by an embodiment of the present application.
  • Fig. 13c is a schematic structural diagram of a grid structure provided by an embodiment of the present application.
  • Fig. 14a is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 14b is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 15a is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • Fig. 15b is a schematic structural diagram of a surface acoustic wave resonator provided by another embodiment of the present application.
  • first, second and the like are used for convenience of description only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • a feature defined as “first”, “second”, etc. may expressly or implicitly include one or more of that feature.
  • plural means two or more.
  • words such as “exemplary” or “for example” are used as examples, illustrations or illustrations. Any embodiment or design scheme described as “exemplary” or “for example” in the embodiments of the present application shall not be interpreted as being more preferred or more advantageous than other embodiments or design schemes. Rather, the use of words such as “exemplary” or “such as” is intended to present related concepts in a concrete manner.
  • Embodiments of the present application provide an electronic device, which can be, for example, a mobile phone, a tablet computer (pad), a personal digital assistant (personal digital assistant, PDA), a TV, a smart wearable product (for example, a smart watch) , smart bracelet), virtual reality (virtual reality, VR) terminal equipment, augmented reality (augmented reality, AR) terminal equipment, charging small household appliances (such as soybean milk machine, sweeping robot), drones, radar, aerospace equipment
  • a mobile phone a tablet computer (pad), a personal digital assistant (personal digital assistant, PDA), a TV, a smart wearable product (for example, a smart watch) , smart bracelet), virtual reality (virtual reality, VR) terminal equipment, augmented reality (augmented reality, AR) terminal equipment, charging small household appliances (such as soybean milk machine, sweeping robot), drones, radar, aerospace equipment
  • VR virtual reality
  • AR augmented reality
  • radar aerospace equipment
  • the embodiment of the present application does not specifically limit the specific form of the electronic equipment.
  • the electronic device 1 mainly includes a cover plate 11 , a display screen 12 , a middle frame 13 and a rear case 14 .
  • the rear case 14 and the display screen 12 are respectively located on both sides of the middle frame 13, and the middle frame 13 and the display screen 12 are arranged in the rear case 14, and the cover plate 11 is arranged on the side of the display screen 12 away from the middle frame 13, and the display screen 12
  • the display surface faces the cover plate 11 .
  • the above-mentioned display screen 12 can be a liquid crystal display (liquid crystal display, LCD), in this case, the liquid crystal display includes a liquid crystal display panel and a backlight module, the liquid crystal display panel is arranged between the cover plate 11 and the backlight module, and the backlight The module is used to provide light source for the liquid crystal display panel.
  • the above display screen 12 may also be an organic light emitting diode (OLED) display screen. Since the OLED display is a self-luminous display, there is no need to set a backlight module.
  • OLED organic light emitting diode
  • the above-mentioned middle frame 13 includes a supporting board 131 and a frame 132 surrounding the supporting board 131 .
  • the above-mentioned electronic device 1 may also include printed circuit boards (printed circuit boards, PCB), batteries, cameras and other electronic components, and the printed circuit boards, batteries, cameras and other electronic components may be arranged on the carrier board 131.
  • the above-mentioned electronic device 1 may also include system-on-chip (system on chip, SOC), radio frequency chip, etc. arranged on the PCB, and the PCB is used to carry the system-level chip, radio frequency chip, etc., and is electrically connected to the system-level chip, radio frequency chip, etc. .
  • the radio frequency chip may include acoustic filters, processors and other parts. Processors are used to process various signals, and acoustic filters are an important part of radio frequency signal processing, which are used to pass signals of specific frequencies and block signals of other frequencies.
  • the embodiment of the present application provides an acoustic filter, which can be applied to the above-mentioned electronic device 1, for example, in the radio frequency chip in the electronic device 1.
  • the acoustic filter provided in the embodiment of the present application can be, for example, Low-pass acoustic filter, high-pass acoustic filter, band-pass acoustic filter, band-stop acoustic filter or active acoustic filter, etc.
  • the acoustic filter 10 that the embodiment of the present application provides comprises multiple cascaded surface acoustic wave (surface acoustic wave, SAW) resonators 100, and these multiple surface acoustic wave resonators 100 can have different resonant frequency, and can be cascaded together in a series-parallel manner, the performance of the acoustic filter 10 is closely related to the performance of the surface acoustic wave resonator 100 .
  • FIG. 2 when multiple SAW resonators 100 are cascaded together in series and parallel, FIG. 2 also shows the signal input terminal Vin, the signal output terminal Vout and the ground terminal GND of the acoustic filter 10 .
  • the acoustic filter composed of cascaded series and parallel resonators with different resonant frequencies has the advantages of small passband insertion loss, high out-of-band steepness, and strong power tolerance.
  • the embodiment of the present application also provides a surface acoustic wave resonator 100, the surface acoustic wave resonator 100 can be applied to the above-mentioned acoustic filter 10, the structure of the surface acoustic wave resonator 100 is illustrated through several embodiments below sexual description.
  • the surface acoustic wave resonator 100 includes: an interdigital transducer (interdigital transducer, IDT) 101, a piezoelectric material layer 102, a first dielectric layer 103, a second dielectric layer 104 and grid structure 105 .
  • the first dielectric layer 103 is disposed above the second dielectric layer 104 ; the piezoelectric material layer 102 is disposed above the first dielectric layer 103 ; and the interdigital transducer 101 is disposed above the piezoelectric material layer 102 .
  • the above-mentioned IDT 101 includes a first bus bar (busbar) 1011a and a second bus bar 1012a, a plurality of first electrode fingers (IDT electrode) 1011b, and a plurality of second electrodes oppositely arranged finger 1012b; a plurality of first electrode fingers 1011b protrude from the first bus bar 1011a to the second bus bar 1012a along the extending direction of the first bus bar 1011a; a plurality of second electrode fingers 1012b extend along the extending direction of the second bus bar 1012a, Sequentially protrude from the second bus bar 1012a to the first bus bar 1011a; wherein, a plurality of first electrode fingers 1011b and a plurality of second electrode fingers 1012b are along the first direction between the first bus bar 1011a and the second bus bar 1012a
  • the Xs are arranged alternately in sequence, and there is no contact between the first electrode fingers 1011b and the second electrode fingers 1012b.
  • a plurality of first electrode fingers 1011b and a plurality of second electrode fingers 1012b are alternately arranged sequentially along the first direction X between the first bus bar 1011a and the second bus bar 1012a" means: 1011a and the second bus bar 1012a, a first electrode finger 1011b, a second electrode finger 1012b, a first electrode finger 1011b, a second electrode finger 1012b, a first electrode finger 1011b, a second electrode finger 1012b and so on are set in sequence.
  • FIG. 3 only shows a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b in the IDT 101. It can be understood that the IDT 101 includes but is not limited to A pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b.
  • the extending direction of the first bus bar 1011 a and the extending direction of the second bus bar 1012 a are both the first direction X.
  • the number of the first electrode fingers 1011b and the number of the second electrode fingers 1012b in the IDT 101 are not limited, and can be set as required.
  • the plurality of first electrode fingers 1011b may be arranged at equal intervals, or may be arranged at unequal intervals.
  • the plurality of second electrode fingers 1012b may be arranged at equal intervals, or may be arranged at unequal intervals.
  • the arrangement of the plurality of first electrode fingers 1011b at unequal intervals means that the distance between at least one pair of adjacent first electrode fingers 1011b is the same as that of another pair of adjacent first electrode fingers 1011b. The spacing between 1011b is not the same.
  • the plurality of first electrode fingers 1011b and the plurality of second electrode fingers 1012b are alternately arranged sequentially, and the spacing between adjacent first electrode fingers 1011b and second electrode fingers 1012b may be the same;
  • the distances between adjacent first electrode fingers 1011b and second electrode fingers 1012b are not completely the same, that is, the distance between at least one pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b is the same as that of another pair of adjacent The distances between the first electrode fingers 1011b and the second electrode fingers 1012b are different.
  • first bus bar 1011a, the first electrode fingers 1011b, the second bus bar 1012a and the second electrode fingers 1012b can be fabricated at the same time; the first bus bar 1011a and the first electrode fingers 1011b can also be fabricated first, and then The second bus bar 1012a and the second electrode finger 1012b; or, the second bus bar 1012a and the second electrode finger 1012b are fabricated first, and then the first bus bar 1011a and the first electrode finger 1011b are fabricated.
  • the material of the IDT 101 may be, for example, one or more of aluminum (Al), molybdenum (Mo), tungsten (W), ruthenium (Ru), copper (Cu) and platinum (Pt).
  • the above-mentioned surface acoustic wave resonator 100 further includes reflective gratings 106 arranged on both sides of the interdigital transducer 101 along the first direction X, and the reflective gratings 106 include multiple arrays arranged in sequence along the first direction X.
  • the reflective grating 106 is used to confine the sound waves within the SAW resonator 100 and prevent the sound waves from leaking out of the SAW resonator 100 .
  • the above-mentioned interdigital transducer 101 is disposed above the piezoelectric material layer 102 , and the piezoelectric material layer 102 is used to excite surface acoustic waves under the action of the interdigital transducer 101 .
  • the material of the piezoelectric material layer 102 may include, for example, one or more of LiNbO 3 (lithium niobate), LiTaO 3 (lithium tantalate), quartz (quartz), and the like.
  • the above-mentioned first dielectric layer 103 is disposed on the side of the piezoelectric material layer 102 away from the IDT 101; the first dielectric layer 103 is disposed between the piezoelectric material layer 102 and the second dielectric layer 104, that is, the second dielectric layer 104 sets the first dielectric layer 103 away from the side of the piezoelectric material layer 102, and the second dielectric layer 104 is used to confine the acoustic energy generated by the piezoelectric material layer 102 in the piezoelectric material layer 102; wherein, the first dielectric layer 103 The sound velocity of the second dielectric layer 104 is greater than the sound velocity of the piezoelectric material layer 102 .
  • the second dielectric layer 104 can confine the acoustic energy generated by the piezoelectric material layer 102 within the piezoelectric material layer 102 .
  • the sound velocity of the first dielectric layer 103 is lower than that of the piezoelectric material layer 102, and the sound velocity of the second dielectric layer 104 is greater than that of the piezoelectric material layer 102, the sound velocity of the first dielectric layer 103 is lower than that of the second dielectric layer 104.
  • the speed of sound That is to say, for the first dielectric layer 103 and the second dielectric layer 104, the material of the first dielectric layer 103 is a low-sonic material, and the material of the second dielectric layer 104 is a high-sonic material.
  • the material of the first dielectric layer 103 may include one or more of silicon dioxide (SiO 2 ), tellurium dioxide (TeO 2 ) or silicon oxyfluoride (SiOF).
  • the material of the second dielectric layer 104 may include one or more of silicon (Si), silicon carbide (SiC), diamond (diamond), quartz (quartz) or sapphire (sapphire).
  • the above-mentioned SAW resonator 100 further includes a grid structure 105 , and the grid structure 105 is used to suppress the stray resonance of the SAW resonator 100 .
  • the grid structure 105 is used to suppress the stray resonance of the SAW resonator 100 by suppressing the stray resonance in the first dielectric layer 103 .
  • the grid structure 105 may include one grid 105a; it may also include a plurality of grids 105a, and when the grid structure 105 includes a plurality of grids 105a, the plurality of grids 105a are arranged in sequence along the first direction X , that is, the grid structure 105 includes a plurality of grids 105a arranged in sequence along the first direction X.
  • the material of the grid structure 105 may be an insulating material, and the insulating material may be one or more of silicon oxide (SiOx), silicon nitride (SiNx) or aluminum oxide (Al 2 O 3 ), for example.
  • silicon oxide may be, for example, silicon dioxide (SiO2).
  • the material of the above-mentioned grid structure 105 can also be a conductive material, and the conductive material can be, for example, one of aluminum (Al), copper (Cu), ruthenium (Ru), molybdenum (Mo), platinum (Pt), and tungsten (W). one or more species.
  • the communication frequency band continues to increase, the frequency bands become very crowded, and the distance between adjacent frequency bands becomes very narrow, which requires the acoustic filter to have a high steepness, in order to meet Steepness requirements, the surface acoustic wave resonator constituting the acoustic filter needs to have a high Q value, and the Q value refers to the quality factor of the acoustic filter.
  • the surface acoustic wave resonator provided in the embodiment of the present application has a layered structure, and the second dielectric layer 104, the first dielectric layer 103, the piezoelectric material layer 102, and the interdigital transducer 101 are stacked in sequence.
  • the second dielectric layer 104 Since the second dielectric layer 104 The velocity of sound is greater than the velocity of sound of the piezoelectric material layer 102, and the velocity of sound of the first dielectric layer 103 is less than the velocity of sound of the piezoelectric material layer 102, that is, relative to the first dielectric layer 103 and the piezoelectric material layer 102, the second dielectric layer 104 is High sound velocity layer, so the second dielectric layer 104 can limit the acoustic energy generated by the piezoelectric material layer 102 to vibrate in the piezoelectric material layer 102, which can solve the problem of energy leakage, thereby improving the Q value of the surface acoustic wave resonator , when the surface acoustic wave resonator 100 operates at 2 GHz, the Q value can be as high as 4000 or more, which is more than 5 times that of the traditional resonator.
  • Fig. 5 is a surface acoustic wave resonator 100 provided in the related art
  • the surface acoustic wave resonator 100 includes a second dielectric layer 104, a first dielectric layer 103, a piezoelectric material layer 102 and an interdigital transduction stacked in sequence device 101; the sound velocity of the second dielectric layer 104 is greater than the sound velocity of the piezoelectric material layer 102, and the sound velocity of the first dielectric layer 103 is lower than the sound velocity of the piezoelectric material layer 102.
  • the second dielectric layer 104 , the first dielectric layer 103 , the piezoelectric material layer 102 , and the interdigital transducer 101 can refer to the above, and will not be repeated here.
  • the surface wave resonator 100 Since the sound velocity of the second dielectric layer 104 in the surface acoustic wave resonator 100 provided in FIG.
  • the surface wave resonator 100 has a high Q value. However, since the sound velocity of the first dielectric layer 103 is lower than that of the piezoelectric material layer 102, and the sound velocity of the first dielectric layer 103 is lower than that of the second dielectric layer 104, the surface acoustic wave resonator 100 provided in FIG. There will be spurious resonances, which will seriously affect the performance of the surface acoustic wave resonator 100 and the performance of the acoustic filter 10.
  • the material of the interdigital transducer 101 is Al (aluminum), the material of the piezoelectric material layer 102 is 42 ° YX-LiTaO 3 (lithium tantalate), and the material of the first dielectric layer 103 is silicon dioxide (SiO 2 ) , the material of the second dielectric layer 104 is silicon (Si) as an example,
  • Fig. 6 is the admittance (admittance) curve of the surface acoustic wave resonator 100 shown in Fig. It can be seen from FIG.
  • Fig. 7 is the displacement field distribution diagram of each layer in the surface acoustic wave resonator 100 shown in Fig. 5, can also find out the displacement field distribution at the stray resonance place from Fig. 7, and different colors represent different displacement fields in Fig.
  • the stray is due to the energy leakage of the piezoelectric material layer 102 into the first dielectric layer 103 (ie SiO 2 ), and is generated in the first dielectric layer 103 (ie SiO 2 ).
  • Resonance that is, caused by plate wave resonance, this is because the sound velocity of the first dielectric layer 103 is lower than the sound velocity of the piezoelectric material layer 102, and the sound velocity of the first dielectric layer 103 is lower than the sound velocity of the second dielectric layer 104, so the first dielectric layer There will be resonance in 103.
  • the surface acoustic wave resonator 100 provided in the embodiment of the present application in addition to the interdigital transducer 101, the piezoelectric material layer 102, the first dielectric layer 103 and the second dielectric layer 104, also includes a grid structure 105, because The grid structure 105 is used to suppress the stray resonance of the surface acoustic wave resonator 100, for example suppressing the stray resonance in the first dielectric layer 103 of the surface acoustic wave resonator 100, so that the out-of-band suppression of the acoustic filter 10 can be improved, The performance of the surface acoustic wave resonator 100 and the performance of the acoustic filter 10 are improved.
  • the reason why the grid structure 105 can suppress the stray resonance of the surface acoustic wave resonator 100 (for example, suppress the stray resonance in the first dielectric layer 103) is that the grid structure 105 destroys the sound wave in the surface acoustic wave resonator 100 (for example, The periodicity of the propagation in the first dielectric layer 103) can thus suppress the stray resonance in the surface acoustic wave resonator 100 (eg, the first dielectric layer 103).
  • the grid structure 105 when the grid structure 105 includes a plurality of grids 105a, the plurality of grids 105a can more effectively break the period of sound waves propagating in the surface acoustic wave resonator 100 (such as the first dielectric layer 103) properties, so that the stray resonance in the surface acoustic wave resonator 100 (such as the first dielectric layer 103) can be more effectively suppressed.
  • the embodiment of the present application sets a grid structure 105, and the grid structure 105 is used to suppress the surface acoustic wave resonator 100 (such as the first dielectric layer 103)
  • the stray resonance in the SAW resonator because the embodiment of the present application uses the grid structure 105 to destroy the periodicity of the sound wave propagating in the surface acoustic wave resonator 100 (such as the first dielectric layer 103) to achieve the purpose of suppressing the stray resonance, so this
  • the embodiments of the application can more significantly suppress the stray resonance in the surface acoustic wave resonator 100 (for example, the first di
  • the material of the interdigital transducer 101 is Al (aluminum), the material of the piezoelectric material layer 102 is 42 ° YX-LiTaO 3 (lithium tantalate), and the material of the first dielectric layer 103 is silicon dioxide (SiO 2 ) , the material of the second dielectric layer 104 is silicon (Si), the material of the grid structure 105 is aluminum oxide (Al 2 O 3 ) as an example, FIG. 8 is the surface acoustic wave resonator shown in FIG. The admittance curve corresponding to 100, the abscissa indicates the frequency, and the ordinate indicates the admittance. Curve a in FIG.
  • curve b is the admittance curve corresponding to the surface acoustic wave resonator 100 shown in FIG. 5 in the related art
  • the abscissa represents the frequency
  • the ordinate represents the admittance. Comparing the curve a and the curve b in FIG. 9, it can be seen that the surface acoustic wave resonator 100 provided by the embodiment of the present application can greatly suppress the spurious frequency near 3800MHz resonance. In addition, the sharper the admittance curve, the higher the Q value.
  • Fig. 10 is the displacement field distribution figure of each layer in the surface acoustic wave resonator 100 shown in Fig. 3, can find out from Fig. 10 that the frequency is the displacement field distribution of the stray resonance at the vicinity of 3800MHz, different colors represent in Fig. 10 Different displacement field amplitudes.
  • one of the temperature coefficient of frequency (TCF) of the first dielectric layer 103 and the temperature frequency coefficient of the piezoelectric material layer 102 is a positive number, and the other is a negative number.
  • the temperature frequency coefficient of the first dielectric layer 103 may be a positive number, and the temperature frequency coefficient of the piezoelectric material layer 102 may be a negative number; it may also be that the temperature frequency coefficient of the first dielectric layer 103 is a negative number, and the piezoelectric material layer 102 The temperature frequency coefficient of is positive.
  • the absolute value of the temperature frequency coefficient of the first dielectric layer 103 and the absolute value of the temperature frequency coefficient of the piezoelectric material layer 102 may or may not be equal.
  • the vibration frequency of the piezoelectric material layer 102 when the temperature frequency coefficient TCF of the piezoelectric material layer 102 is a negative number and the temperature rises, the vibration frequency of the piezoelectric material layer 102 will shift to a low frequency;
  • the temperature-frequency coefficient TCF of 102 is a positive number, and when the temperature rises, the vibration frequency of the piezoelectric material layer 102 will shift to high frequency.
  • the vibration frequency of the first dielectric layer 103 will deviate to a low frequency; when the temperature-frequency coefficient TCF of the first dielectric layer 103 is a positive number, When the temperature rises, the vibration frequency of the first dielectric layer 103 will shift to high frequency.
  • the vibration frequency of LiTaO 3 when the material of the piezoelectric material layer 102 is LiTaO 3 , when the temperature rises, the vibration frequency of LiTaO 3 will shift to a low frequency, that is, the temperature frequency coefficient TCF of LiTaO 3 is a negative number; in the first dielectric layer 103
  • the vibration frequency of SiO 2 when the temperature rises, the vibration frequency of SiO 2 will shift to high frequency, that is, the temperature frequency coefficient TCF of SiO 2 is a positive number.
  • the material of the piezoelectric material layer 102 may be LiTaO 3
  • the material of the first dielectric layer 103 may be SiO 2 .
  • one of the temperature frequency coefficient of the first dielectric layer 103 and the temperature frequency coefficient of the piezoelectric material layer 102 is a positive number and the other is a negative number
  • the vibration frequency and the vibration frequency of the first dielectric layer 103 one deviates to a high frequency and the other deviates to a low frequency, for example, the vibration frequency of the piezoelectric material layer 102 will deviate to a low frequency, and the vibration frequency of the first dielectric layer 103 will deviate to a high frequency , in this way, the overall vibration frequency of the surface acoustic wave resonator 100 does not shift or the shift is small, so that the performance of the surface acoustic wave resonator 100 can be improved.
  • the overall temperature frequency stability of the surface acoustic wave resonator 100 can be further enhanced, and further The performance of the surface acoustic wave resonator 100 is improved.
  • the embodiment of the present application does not limit the installation position of the grid structure 105 , and several installation positions of the grid structure 105 are provided as examples below.
  • the grid structure 105 is disposed in the first dielectric layer 103 .
  • the grid structure 105 is disposed in the first dielectric layer 103, in some examples, as shown in FIG.
  • the layer 103 surrounds, and the grid structure 105 and the surface of the first dielectric layer 103 close to the piezoelectric material layer 102 (ie, the upper surface of the first dielectric layer 103 in FIG. 3 ) and the surface of the first dielectric layer 103 close to the second dielectric layer
  • the surfaces of 104 that is, the lower surface of the first dielectric layer 103 in FIG. 3 ) are not in contact.
  • the grid structure 105 can effectively destroy the periodicity of sound waves propagating in the first dielectric layer 103 , so that the stray resonance in the first dielectric layer 103 can be effectively suppressed.
  • the grid structure 105 is disposed on the side of the first dielectric layer 103 close to the surface of the piezoelectric material layer 102 (ie, the upper surface of the first dielectric layer 103 in FIG. 11a ), And the grid structure 105 is in contact with the first film layer, which is a film layer in contact with the surface of the first dielectric layer 103 close to the piezoelectric material layer 102 .
  • the first film layer may be the piezoelectric material layer 102 ; it may also be any other film layer disposed between the first dielectric layer 103 and the piezoelectric material layer 102 .
  • the grid structure 105 is disposed on the side of the first dielectric layer 103 close to the surface of the second dielectric layer 104 (ie, the lower surface of the first dielectric layer 103 in FIG. 11b ), And the grid structure 105 is in contact with the second film layer, and the second film layer is a film layer in contact with the surface of the first dielectric layer 103 close to the second dielectric layer 104 .
  • the second film layer may be the second dielectric layer 104 ; it may also be any other film layer disposed between the first dielectric layer 103 and the second dielectric layer 104 .
  • the grid structure 105 is arranged in the first film layer, and the first film layer is the surface close to the piezoelectric material layer 102 of the first dielectric layer 103 (that is, the first dielectric layer in FIG. 12a layer 103), and the grid structure 105 is in contact with the first dielectric layer 103.
  • the first film layer may be the piezoelectric material layer 102 ; it may also be any other film layer disposed between the first dielectric layer 103 and the piezoelectric material layer 102 .
  • FIG. 12 a is illustrated by taking the piezoelectric material layer 102 as the first film layer as an example.
  • the grid structure 105 is arranged in the second film layer, and the second film layer is the surface close to the second dielectric layer 104 of the first dielectric layer 103 (that is, the first dielectric layer in Figure 12b The lower surface of layer 103) is in contact with the film layer, and the grid structure 105 is in contact with the first dielectric layer 103.
  • the second film layer can be the second dielectric layer 104 ; it can also be any other film layer arranged between the first dielectric layer 103 and the second dielectric layer 104 .
  • FIG. 12 b is illustrated by taking the second film layer as the second dielectric layer 104 as an example.
  • the grid structure 105 is arranged in the first dielectric layer 103 and the first film layer, and the first film layer is the surface close to the piezoelectric material layer 102 of the first dielectric layer 103 (ie The upper surface of the first dielectric layer 103 in Fig. 12c) is in contact with the film layer.
  • the first film layer may be the piezoelectric material layer 102 ; it may also be any other film layer disposed between the first dielectric layer 103 and the piezoelectric material layer 102 .
  • FIG. 12c is illustrated by taking the first film layer as the piezoelectric material layer 102 as an example.
  • the grid structure 105 is arranged in the first dielectric layer 103 and the second film layer, and the second film layer is the surface close to the second dielectric layer 104 of the first dielectric layer 103 (ie The lower surface of the first dielectric layer 103 in Fig. 12d) is in contact with the film layer.
  • the second film layer may be the second dielectric layer 104 ; it may also be any other film layer disposed between the first dielectric layer 103 and the second dielectric layer 104 .
  • FIG. 12d is illustrated by taking the second film layer as the second dielectric layer 104 as an example.
  • the position of the grid structure 105 can be flexibly set as required.
  • Fig. 11a, Fig. 11b, Fig. 12a, Fig. 12b, Fig. 12c and Fig. 12d only illustrate a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b in the interdigital transducer 101, It can be understood that the IDT 101 includes but not limited to a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b.
  • the grid structure 105 is arranged according to the above-mentioned second, third, fourth and fifth ways, since the grid structure 105 is in contact with the first dielectric layer 103, the grid structure 105 can destroy the The periodicity of propagation in the first dielectric layer 103 can further suppress stray resonances in the surface acoustic wave resonator 100 (eg, the first dielectric layer 103 ).
  • the grid 105a in the grid structure 105 extends along the second direction Y; wherein, the second direction Y is perpendicular to the first direction X, and the second direction Y is parallel to the piezoelectric material Layer 102.
  • the grid 105a in the grid structure 105 extends along the second direction Y, that is, the grid 105a is a continuous whole.
  • the grid 105a in the grid structure 105 includes a plurality of mutually disconnected grid units 1051 arranged in sequence along the second direction Y, that is, the grid in the grid structure 105 105 a is discontinuous along the second direction Y; wherein, the second direction Y is perpendicular to the first direction X, and the second direction Y is parallel to the piezoelectric material layer 102 .
  • the number of grid units 1051 included in any grid 105a is not limited, and can be set as required.
  • the grid 105a may include two grid units 1051 arranged in sequence along the second direction Y and disconnected from each other.
  • the grid 105a may include three grid units 1051 arranged in sequence along the second direction Y and disconnected from each other.
  • the lengths of the plurality of grid units 1051 along the second direction Y may be the same or not completely the same.
  • each grid 105a in the surface acoustic wave resonator 100 includes a plurality of grids 105a, as shown in FIG.
  • Each grid 105a in is a continuous whole.
  • each of the plurality of grids 105 a includes a plurality of mutually disconnected grid units 1051 arranged in sequence along the second direction Y.
  • the number of multiple grid units 1051 included in each grid 105a of the multiple grids 105a may be the same or different.
  • At least one grid 105a in the plurality of grids 105a extends along the second direction Y, that is, at least one grid 105a in the plurality of grids 105a is a continuous whole, and the plurality of grids 105a At least one grid 105a in the grid 105a includes a plurality of grid units 1051 that are arranged in sequence along the second direction Y and are disconnected from each other.
  • the shape of the grid 105a in the grid structure 105 along the cross section perpendicular to the first dielectric layer 103 is not limited. In some examples, as shown in FIG. The cross-sectional shape of 103 is rectangular. In some other examples, as shown in FIG. 14 a , the shape of the grid 105 a along a section perpendicular to the first dielectric layer 103 is trapezoidal. In some other embodiments, as shown in FIG. 14 b , the shape of the grid 105 a along a cross section perpendicular to the first dielectric layer 103 is a triangle.
  • FIG. 14a and FIG. 14b only illustrate a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b in the IDT 101. It can be understood that the IDT 101 includes But not limited to a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b.
  • the shape of the grid 105a along the cross section perpendicular to the first dielectric layer 103 includes but not limited to the above-mentioned rectangle, trapezoid, triangle, and may also be other regular or irregular shapes.
  • the shape of the grid 105a along the cross section perpendicular to the first dielectric layer 103 is trapezoidal or triangular, the dependence on process sensitivity can be reduced when manufacturing the grid 105a, and the degree of freedom in design can also be enriched.
  • the shapes of the multiple grids 105a along the cross section perpendicular to the first dielectric layer 103 may be the same or different.
  • the manufacturing process of the surface acoustic wave resonator 100 can be simplified.
  • the difference between the second embodiment and the first embodiment is that, compared with the first embodiment, the third dielectric layer is added in the second embodiment.
  • the surface acoustic wave resonator 100 includes: an interdigital transducer 101, a piezoelectric material layer 102, a first dielectric layer 103, a second dielectric layer 104, a grid structure 105, and at least one layer of a first Three media layers.
  • the second embodiment does not introduce the same parts as the first embodiment, that is, the interdigital transducer 101, the piezoelectric material layer 102, the first dielectric layer 103, the second dielectric layer 104, and the grid structure 105 are not introduced. , only the part that is different from the first embodiment is introduced, that is, only the third dielectric layer is introduced.
  • the surface acoustic wave resonator 100 also includes at least one third dielectric layer 107, the third dielectric layer 107 is arranged between the first dielectric layer 103 and the second dielectric layer 104; the third dielectric layer 107 The sound velocity of is greater than or equal to the sound velocity of the first dielectric layer 103 and less than or equal to the sound velocity of the second dielectric layer 104 .
  • the surface acoustic wave resonator 100 includes a third dielectric layer 107 . In some other examples, as shown in FIG. 15 b , the surface acoustic wave resonator 100 includes two or more third dielectric layers 107 .
  • Fig. 15a and Fig. 15b only illustrate a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b in the interdigital transducer 101, it can be understood that the interdigital transducer 101 includes But not limited to a pair of adjacent first electrode fingers 1011b and second electrode fingers 1012b.
  • the sound velocity of the third medium layer 107 is between the sound velocity of the first medium layer 103 and the sound velocity of the second medium layer 104, or the sound velocity of the third medium layer 107 is the same as that of the first medium layer 103, or , the sound velocity of the third dielectric layer 107 is the same as that of the second dielectric layer 104 .
  • the material of the third dielectric layer 107 may be one or more of silicon dioxide, tellurium dioxide, silicon oxyfluoride, silicon carbide, diamond, quartz or sapphire.
  • the surface acoustic wave resonator 100 includes the third dielectric layer 107
  • better compatibility with the process can be achieved, for example, in the case of poor adhesion between the first dielectric layer 103 and the second dielectric layer 104
  • the material of the third dielectric layer 107 can be selected to have good adhesion to both the first dielectric layer 103 and the second dielectric layer 104, thereby improving process compatibility.
  • the degree of freedom in design can also be enriched.
  • the surface acoustic wave resonator 100 may also include other layers disposed between the third dielectric layer 107 and the first dielectric layer 103 .
  • the surface acoustic wave resonator 100 may also include other layers disposed between the third dielectric layer 107 and the second dielectric layer 104 .

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Abstract

本申请的实施例提供一种声表面波谐振器、声学滤波器及电子设备，涉及半导体技术领域，可以提高声学滤波器的性能。该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方，压电材料层设置在第一介质层上方，叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；栅格结构设置于第一介质层中，用于抑制声表面波谐振器的杂散谐振；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速。

Description

一种声表面波谐振器、声学滤波器及电子设备 技术领域
本申请涉及半导体技术领域，尤其涉及一种声表面波谐振器、声学滤波器及电子设备。
背景技术
随着移动通讯水平的发展及人们对通讯速度要求的不断提高，越来越多的频带被应用于移动通讯系统。其中，声学滤波器是移动通讯系统中的一个重要部件。
现有的声学滤波器是提升通信质量的瓶颈，随着更多通信模式和通信场景的落地，声学滤波性能面临更大的挑战，提升声学滤波器的性能是目前声学滤波器的研究重点和难点。
发明内容
本申请的实施例提供一种声表面波谐振器、声学滤波器及电子设备，可以提高声学滤波器的性能。
为达到上述目的，本申请采用如下技术方案：
第一方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；栅格结构用于抑制声表面波谐振器的杂散谐振；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速。本申请提供的声表面波谐振器，除包括叉指换能器、压电材料层、第一介质层以及第二介质层外，还包括栅格结构，由于栅格结构用于抑制声表面波谐振器的杂散谐振，因而可以改善声学滤波器的带外抑制，提高声表面波谐振器的性能以及声学滤波器的性能。栅格结构可以抑制声表面波谐振器的杂散谐振的原因在于，栅格结构破坏了声波在声表面波谐振器中传播的周期性，因而可以抑制声表面波谐振器的杂散谐振。
在一种可能的实施方式中，栅格结构设置于第一介质层中。由于声表面波谐振器的杂散谐振主要发生在第一介质层中，因而将栅格结构设置于第一介质层中，可以更有效地抑制声表面波谐振器的杂散谐振。
在一种可能的实施方式中，栅格结构包括沿第一方向依次排列的多个栅格。在栅格结构包括多个栅格的情况下，多个栅格可以更有效地破坏声波在第一介质层中传播的周期性，进而可以更有效地抑制声表面波谐振器的杂散谐振。
在一种可能的实施方式中，栅格结构用于通过抑制第一介质层中的杂散谐振，来抑制声表面波谐振器的杂散谐振。也就是说，声波在第一介质层中会产生杂散谐振，栅格结构抑制了第一介质层中的杂散谐振，进而可以抑制声表面波谐振器的杂散谐振。
在一种可能的实施方式中，栅格结构设置于第一介质层内，且与第一介质层的靠 近压电材料层的表面(即第一介质层的上表面)以及第一介质层的靠近第二介质层的表面(即第一介质层的下表面)均不接触。由于杂散谐振主要在第一介质层内产生，因而将栅格结构设置在第一介质层内时，栅格结构可以有效地破坏声波在第一介质层中传播的周期性，进而可以有效抑制第一介质层中的杂散谐振。
在一种可能的实施方式中，栅格结构设置于第一介质层的靠近压电材料层的表面(即第一介质层的上表面)的一侧，且栅格结构和第一膜层接触，第一膜层为与第一介质层的靠近压电材料层的表面接触的膜层。可以根据需要灵活设置栅格结构的位置。
在一种可能的实施方式中，第一膜层为压电材料层。
在一种可能的实施方式中，栅格结构设置于第一介质层的靠近第二介质层的表面(即第一介质层的下表面)的一侧，且栅格结构和第二膜层接触，第二膜层为与第一介质层的靠近第二介质层的表面接触的膜层。可以根据需要灵活设置栅格结构的位置。
在一种可能的实施方式中，第二膜层为第二介质层。
在一种可能的实施方式中，栅格沿第二方向延伸；其中，第二方向垂直于第一方向，且第二方向平行于压电材料层。在此情况下，栅格为一个连续的整体。
在一种可能的实施方式中，栅格包括沿第二方向依次排列的相互断开的多个栅格单元；其中，第二方向垂直于第一方向，且第二方向平行于压电材料层。在此情况下，栅格沿第二方向非连续。
在一种可能的实施方式中，栅格沿垂直于第一介质层的截面的形状为矩形、梯形或三角形。可以根据需要选取栅格沿垂直于第一介质层的截面的形状，丰富设计自由度。此外，在栅格沿垂直于第一介质层的截面的形状为梯形或三角形的情况下，制作栅格时可以降低对工艺敏感度的依赖。
在一种可能的实施方式中，声表面波谐振器还包括至少一层第三介质层，第三介质层设置在第一介质层和第二介质层之间；第三介质层的声速大于或等于第一介质层的声速，且小于或等于第二介质层的声速。由于声表面波谐振器包括第三介质层，因而可以实现对工艺具有更好的兼容性，例如在第一介质层和第二介质层之间粘附性不好的情况下，可以选取的第三介质层的材料对第一介质层和第二介质层都具有良好的粘附性，从而可以提高工艺兼容性。此外，在声表面波谐振器包括第三介质层时，也可以丰富设计的自由度。
在一种可能的实施方式中，第一介质层的温度频率系数和压电材料层的温度频率系数中一个为正数，一个为负数。由于第一介质层的温度频率系数和压电材料层的温度频率系数中一个为正数，一个为负数，因此在温度升高时，压电材料层的振动频率和第一介质层的振动频率，一个向高频偏，一个向低频偏，例如压电材料层的振动频率会向低频偏，第一介质层的振动频率会向高频偏，这样一来，声表面波谐振器的整体的振动频率不会发生偏移或偏移的较小，从而可以提高声表面波谐振器的性能。
在一种可能的实施方式中，栅格结构的材料包括氧化硅、氮化硅、氧化铝、铝、铜、钌、钼、铂、钨中的一种或多种。
在一种可能的实施方式中，第一介质层的材料包括二氧化硅、二氧化碲或氟氧化硅中的一种或多种。
在一种可能的实施方式中，第二介质层的材料包括碳化硅、金刚石、石英或蓝宝 石中的一种或多种。
第二方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速；栅格结构设置于第一介质层中，栅格结构包括沿第一方向依次排列的多个栅格。
本申请提供的声表面波谐振器，除包括叉指换能器、压电材料层、第一介质层以及第二介质层外，还包括栅格结构，由于栅格结构设置于第一介质层中，且栅格结构包括沿第一方向依次排列的多个栅格，因而多个栅格可以破坏声波在声表面波谐振器中传播的周期性，进而可以抑制声表面波谐振器的杂散谐振，改善声学滤波器的带外抑制，提高声表面波谐振器的性能以及声学滤波器的性能。
第三方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速；栅格结构设置于第一膜层中，第一膜层为与第一介质层的靠近压电材料层的表面接触的膜层，且栅格结构与第一介质层接触；栅格结构用于抑制声表面波谐振器的杂散谐振。可以参考上述第一方面相关技术效果的描述，此处不再赘述。
在一种可能的实施方式中，第一膜层为压电材料层。
第四方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速；栅格结构设置于第二膜层中，第二膜层为与第一介质层的靠近第二介质层的表面接触的膜层，且栅格结构与第一介质层接触；栅格结构用于抑制声表面波谐振器的杂散谐振。可以参考上述第一方面相关技术效果的描述，此处不再赘述。
在一种可能的实施方式中，第二膜层为第二介质层。
第五方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器 包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速；栅格结构设置于第一介质层和第一膜层中，第一膜层为与第一介质层的靠近压电材料层的表面接触的膜层；栅格结构用于抑制声表面波谐振器的杂散谐振。可以参考上述第一方面相关技术效果的描述，此处不再赘述。
在一种可能的实施方式中，第一膜层为压电材料层。
第六方面，提供一种声表面波谐振器，该声表面波谐振器包括叉指换能器、压电材料层、第一介质层、第二介质层以及栅格结构；第一介质层设置在第二介质层上方；压电材料层设置在第一介质层上方；叉指换能器设置在压电材料层上方，叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；压电材料层用于在叉指换能器的作用下激发声表面波；第二介质层用于将压电材料层产生的声学能量限制在压电材料层内；其中，第一介质层的声速小于压电材料层的声速，第二介质层的声速大于压电材料层的声速；栅格结构设置于第一介质层和第二膜层中，第二膜层为与第一介质层的靠近第二介质层的表面接触的膜层；栅格结构用于抑制声表面波谐振器的杂散谐振。可以参考上述第一方面相关技术效果的描述，此处不再赘述。
在一种可能的实施方式中，第二膜层为第二介质层。
第七方面，提供一种声学滤波器，该声学滤波器包括多个级联的声表面波谐振器；其中，声表面波谐振器为上述第一方面、第二方面、第三方面、第四方面、第五方面或第六方面提供的声表面波谐振器。该声学滤波器具有与上述第一方面提供的声表面波谐振器相同的技术效果，可以参考上述第一方面的相关描述，此处不再赘述。
第八方面，提供一种电子设备，该电子设备包括声学滤波器、处理器和印刷电路板，声学滤波器和处理器均设置在印刷电路板上；其中，声学滤波器为上述第七方面提供的声学滤波器。该电子设备具有与上述第一方面提供的声表面波谐振器相同的技术效果，可以参考上述第一方面的相关描述，此处不再赘述。
附图说明
图1为本申请的实施例提供的一种电子设备的结构示意图；
图2为本申请的实施例提供的一种声学滤波器的结构示意图；
图3为本申请的实施例提供的一种声表面波谐振器的结构示意图；
图4为本申请的实施例提供的一种叉指换能器和反射栅的结构示意图；
图5为相关技术提供的一种声表面波谐振器的结构示意图；
图6为图5所示的声表面波谐振器对应的导纳曲线图；
图7为图5所示的声表面波谐振器中各层的位移场分布图；
图8为图3所示的声表面波谐振器对应的导纳曲线图；
图9为图3所示的声表面波谐振器对应的导纳曲线图和图5所示的声表面波谐振器对应的导纳曲线图；
图10为图3所示的声表面波谐振器中各层的位移场分布图；
图11a为本申请的另一实施例提供的一种声表面波谐振器的结构示意图；
图11b为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图12a为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图12b为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图12c为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图12d为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图13a为本申请的实施例提供的一种栅格结构的结构示意图；
图13b为本申请的实施例提供的一种栅格结构的结构示意图；
图13c为本申请的实施例提供的一种栅格结构的结构示意图；
图14a为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图14b为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图15a为本申请的又一实施例提供的一种声表面波谐振器的结构示意图；
图15b为本申请的又一实施例提供的一种声表面波谐振器的结构示意图。
附图标记：1-电子设备；10-声学滤波器；11-盖板；12-显示屏；13-中框；14-后壳；100-声表面波谐振器；101-叉指换能器；102-压电材料层；103-第一介质层；104-第二介质层；105-栅格结构；105a-栅格；106-反射栅；107-第三介质层；131-承载板；132-边框；1011a-第一汇流条；1012a-第二汇流条；1011b-第一电极指；1012b-第二电极指；1051-栅格单元；1061-栅条；1062-连接部。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。
以下，术语“第一”、“第二”等仅用于描述方便，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请实施例中，“示例性的”或者“例如”等词用于表示作例子、例证或说明。本申请实施例中被描述为“示例性的”或者“例如”的任何实施例或设计方案不应被解释为比其它实施例或设计方案更优选或更具优势。确切而言，使用“示例性的”或“例如”等词旨在以具体方式呈现相关概念。
在本申请实施例中，“和/或”，描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B的情况，其中A，B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。
本申请的实施例提供一种电子设备，该电子设备例如可以为手机(mobile phone)、平板电脑(pad)、个人数字助理(personal digital assistant，PDA)、电视、智能穿戴产品(例如，智能手表、智能手环)、虚拟现实(virtual reality，VR)终端设备、增强现实(augmented reality，AR)终端设备、充电家用小型电器(例如豆浆机、扫地机器人)、无人机、雷达、航空航天设备和车载设备等不同类型的用户设备或者终端设备，本申请实施例对电子设备的具体形式不作特殊限制。
以下为了方便说明，以电子设备为手机为例进行举例说明。如图1所示，电子设备1主要包括盖板11、显示屏12、中框13以及后壳14。后壳14和显示屏12分别位于中框13的两侧，且中框13和显示屏12设置于后壳14内，盖板11设置在显示屏 12远离中框13的一侧，显示屏12的显示面朝向盖板11。
上述显示屏12可以是液晶显示屏(liquid crystal display，LCD)，在此情况下，液晶显示屏包括液晶显示面板和背光模组，液晶显示面板设置在盖板11和背光模组之间，背光模组用于为液晶显示面板提供光源。上述显示屏12也可以为有机发光二极管(organic light emitting diode，OLED)显示屏。由于OLED显示屏为自发光显示屏，因而无需设置背光模组。
上述中框13包括承载板131以及绕承载板131一周的边框132。上述电子设备1还可以包括印刷电路板(printed circuit boards，PCB)、电池、摄像头等电子元器件，印刷电路板、电池、摄像头等电子元器件可以设置在承载板131上。
上述电子设备1还可以包括设置于PCB上的系统级芯片(system on chip，SOC)、射频芯片等，PCB用于承载系统级芯片、射频芯片等，且与系统级芯片、射频芯片等电连接。其中，射频芯片可以包括声学滤波器、处理器等部分。处理器用于对各种信号进行处理，声学滤波器是射频信号处理的重要部分，用于通过特定频率的信号，让其他频率的信号受阻。
本申请的实施例提供一种声学滤波器，该声学滤波器可以应用于上述的电子设备1中，例如应用于电子设备1中的射频芯片中，本申请实施例提供的声学滤波器例如可以为低通声学滤波器、高通声学滤波器、带通声学滤波器、带阻声学滤波器或有源声学滤波器等。
如图2所示，本申请的实施例提供的声学滤波器10包括多个级联的声表面波(surface acoustic wave，SAW)谐振器100，这多个声表面波谐振器100可以具有不同的谐振频率，且可以通过串并联的方式级联在一起，声学滤波器10的性能与声表面波谐振器100的性能密切相关。参考图2，在多个声表面波谐振器100通过串并联的方式级联在一起时，图2还示意出了声学滤波器10的信号输入端Vin、信号输出端Vout以及接地端GND。
此处，由具有不同谐振频率的串并联谐振器级联构成的声学滤波器具有通带插损小、带外陡峭度高及功率耐受性强等优点。
本申请实施例还提供一种声表面波谐振器100，该声表面波谐振器100可以应用于上述的声学滤波器10中，以下通过几个实施例对声表面波谐振器100的结构进行示例性说明。
实施例一
在本实施例一中，如图3所示，声表面波谐振器100包括：叉指换能器(interdigital transducer，IDT)101、压电材料层102、第一介质层103、第二介质层104和栅格结构105。第一介质层103设置在第二介质层104上方；压电材料层102设置在第一介质层103上方；叉指换能器101设置在压电材料层102上方。
如图4所示，上述叉指换能器101包括相对设置的第一汇流条(busbar)1011a和第二汇流条1012a、多个第一电极指(IDT electrode)1011b、以及多个第二电极指1012b；多个第一电极指1011b沿第一汇流条1011a延伸方向，依次从第一汇流条1011a向第二汇流条1012a突出；多个第二电极指1012b沿第二汇流条1012a延伸方向，依次从第二汇流条1012a向第一汇流条1011a突出；其中，多个第一电极指1011b和多个第 二电极指1012b在第一汇流条1011a和第二汇流条1012a之间沿第一方向X依次交错排布，第一电极指1011b和第二电极指1012b之间不接触。
上述“多个第一电极指1011b和多个第二电极指1012b在第一汇流条1011a和第二汇流条1012a之间沿第一方向X依次交错排布”指的是：在第一汇流条1011a和第二汇流条1012a之间，一个第一电极指1011b、一个第二电极指1012b、一个第一电极指1011b、一个第二电极指1012b、一个第一电极指1011b、一个第二电极指1012b等等依次设置。
需要说明的是，图3仅示意出叉指换能器101中的一对相邻的第一电极指1011b和第二电极指1012b，可以理解的是，叉指换能器101包括但不限于一对相邻的第一电极指1011b和第二电极指1012b。
此处，第一汇流条1011a延伸方向、以及第二汇流条1012a延伸方向均为第一方向X。
对于叉指换能器101中第一电极指1011b的数量、以及第二电极指1012b的数量不进行限定，可以根据需要进行设置。多个第一电极指1011b可以是等间距排布，也可以是非等间距排布。同样的，多个第二电极指1012b可以是等间距排布，也可以是非等间距排布。以第一电极指1011b为例，多个第一电极指1011b非等间距排布指的是至少一对相邻的第一电极指1011b之间的间距与另一对相邻的第一电极指1011b之间的间距不相同。
此外，多个第一电极指1011b和多个第二电极指1012b依次交错排布，可以是相邻第一电极指1011b和第二电极指1012b之间的间距均相同；也可以是多对相邻的第一电极指1011b和第二电极指1012b之间的间距不完全相同，即至少一对相邻的第一电极指1011b和第二电极指1012b之间的间距与另一对相邻的第一电极指1011b和第二电极指1012b之间的间距不相同。
需要说明的是，第一汇流条1011a、第一电极指1011b、第二汇流条1012a和第二电极指1012b可以同时制作；也可以先制作第一汇流条1011a和第一电极指1011b，再制作第二汇流条1012a和第二电极指1012b；或者，先制作第二汇流条1012a和第二电极指1012b，再制作第一汇流条1011a和第一电极指1011b。
另外，叉指换能器101的材料例如可以为铝(Al)、钼(Mo)、钨(W)、钌(Ru)、铜(Cu)和铂(Pt)中的一种或多种。
请继续参考图4，上述声表面波谐振器100还包括设置在叉指换能器101沿第一方向X的两侧的反射栅106，反射栅106包括沿第一方向X依次排布的多个栅条1061，多个栅条1061的两端可以通过连接部1062连接在一起。
应当理解到，反射栅106用于将声波限制在声表面波谐振器100内，防止声波泄漏出声表面波谐振器100。
参考图3，上述叉指换能器101设置于压电材料层102上方，压电材料层102用于在叉指换能器101的作用下激发出声表面波。
此处，压电材料层102的材料例如可以包括LiNbO 3(铌酸锂)、LiTaO 3(钽酸锂)、石英(quartz)等中的一种或多种。
上述第一介质层103设置在压电材料层102远离叉指换能器101的一侧；第一介 质层103设置在压电材料层102和第二介质层104之间，即第二介质层104设置第一介质层103远离压电材料层102的一侧，第二介质层104用于将压电材料层102产生的声学能量限制在压电材料层102内；其中，第一介质层103的声速小于压电材料层102的声速，第二介质层104的声速大于压电材料层102的声速。
可以理解的是，由于第二介质层104的声速大于压电材料层102的声速，因而第二介质层104可以将压电材料层102产生的声学能量限制在压电材料层102内。
此处，由于第一介质层103的声速小于压电材料层102的声速，第二介质层104的声速大于压电材料层102的声速，因而第一介质层103的声速小于第二介质层104的声速。也就是说，对于第一介质层103和第二介质层104而言，第一介质层103的材料为低声速材料，第二介质层104的材料为高声速材料。
示例的，第一介质层103的材料可以包括二氧化硅(SiO 2)、二氧化碲(TeO 2)或氟氧化硅(SiOF)中的一种或多种。
示例的，第二介质层104的材料可以包括硅(Si)、碳化硅(SiC)、金刚石(diamond)、石英(quartz)或蓝宝石(sapphire)中的一种或多种。
如图3所示，上述声表面波谐振器100还包括栅格结构105，栅格结构105用于抑制声表面波谐振器100的杂散谐振。
在一些示例中，栅格结构105用于通过抑制第一介质层103中的杂散谐振来达到抑制声表面波谐振器100的杂散谐振的目的。
此处，栅格结构105可以包括一个栅格105a；也可以包括多个栅格105a，在栅格结构105包括多个栅格105a的情况下，多个栅格105a沿第一方向X依次排列，即栅格结构105包括沿第一方向X依次排列的多个栅格105a。
此外，上述栅格结构105的材料可以为绝缘材料，绝缘材料例如可以为氧化硅(SiOx)、氮化硅(SiNx)或氧化铝(Al 2O 3)中的一种或多种。此处，氧化硅例如可以为二氧化硅(SiO2)。上述栅格结构105的材料还可以为导电材料，导电材料例如可以为铝(Al)、铜(Cu)、钌(Ru)、钼(Mo)、铂(Pt)、钨(W)中的一种或多种。
随着通信技术的不断发展，通信频带不断增加，频带之间也变得十分拥挤，相邻频带之间的间距变得十分狭窄，这就要求声学滤波器需要具有较高的陡峭度，为满足陡峭度需求，构成声学滤波器的声表面波谐振器需要具有较高的Q值，Q值指的是声学滤波器的品质因数。
本申请实施例提供的声表面波谐振器为层状结构，第二介质层104、第一介质层103、压电材料层102以及叉指换能器101依次层叠设置，由于第二介质层104的声速大于压电材料层102的声速，第一介质层103的声速小于压电材料层102的声速，即相对于第一介质层103和压电材料层102而言，第二介质层104为高声速层，因而第二介质层104可以将压电材料层102产生的声学能量限制在压电材料层102内振动，这样可以解决能量泄漏的问题，从而可以提高声表面波谐振器的Q值，声表面波谐振器100在2GHz时，Q值可以高达4000以上，是传统谐振器的5倍以上。
在此基础上，随着通信技术的不断发展，除了要求声学滤波器10中的声表面波谐振器100具有较高的Q值外，随着载波聚合(carrier aggregation)技术的不断成熟， 通信系统对声学滤波器10带外也提出了更高的要求，即声学滤波器10带外不能出现严重杂散谐振，否则会影响其他通信频带的性能，这就需要声表面波谐振器100除主模式外不能有其他杂散谐振，因此实现高Q值，且无杂散谐振的声表面波谐振器100及声学滤波器10是当前声表面波领域亟待解决的难题。
图5为相关技术提供的一种声表面波谐振器100，该声表面波谐振器100包括依次层叠设置的第二介质层104、第一介质层103、压电材料层102以及叉指换能器101；第二介质层104的声速大于压电材料层102的声速，第一介质层103的声速小于压电材料层102的声速。其中，第二介质层104、第一介质层103、压电材料层102、叉指换能器101均可以参考上述，此处不再赘述。由于图5提供的声表面波谐振器100中第二介质层104的声速大于压电材料层102的声速，第一介质层103的声速小于压电材料层102的声速，因而图5提供的声表面波谐振器100具有较高的Q值。然而，由于第一介质层103的声速小于压电材料层102的声速，且第一介质层103的声速小于第二介质层104的声速，因此图5提供的声表面波谐振器100在高频处会出现杂散谐振，因而会严重影响声表面波谐振器100的性能以及声学滤波器10的性能。
以叉指换能器101的材料为Al(铝)，压电材料层102的材料为42°YX-LiTaO 3(钽酸锂)，第一介质层103的材料为二氧化硅(SiO 2)，第二介质层104的材料为硅(Si)为例，图6为图5所示的声表面波谐振器100的导纳(admittance)曲线，横坐标表示频率，纵坐标表示导纳，从图6可以看出，在频率为3800MHz附近处出现了较强的杂散谐振，该杂散谐振会严重影响声学滤波器10在该频率附近的带外抑制，从而会严重影响声表面波谐振器100的性能以及声学滤波器10的性能。图7为图5所示的声表面波谐振器100中各层的位移场分布图，从图7中还可以看出杂散谐振处的位移场分布，图7中不同颜色表示不同的位移场幅度，从图7中可以看出，该杂散是由于压电材料层102的能量泄漏到第一介质层103(即SiO 2)中，并在第一介质层103(即SiO 2)中产生谐振，即板波谐振导致的，这是因为第一介质层103的声速小于压电材料层102的声速，且第一介质层103的声速小于第二介质层104的声速，因此第一介质层103中会产生谐振。
而本申请实施例提供的声表面波谐振器100，除包括叉指换能器101、压电材料层102、第一介质层103以及第二介质层104外，还包括栅格结构105，由于栅格结构105用于抑制声表面波谐振器100的杂散谐振，例如抑制声表面波谐振器100的第一介质层103中的杂散谐振，因而可以改善声学滤波器10的带外抑制，提高声表面波谐振器100的性能以及声学滤波器10的性能。栅格结构105可以抑制声表面波谐振器100的杂散谐振(例如抑制第一介质层103中的杂散谐振)的原因在于，栅格结构105破坏了声波在声表面波谐振器100(例如第一介质层103)中传播的周期性，因而可以抑制声表面波谐振器100(例如第一介质层103)中的杂散谐振。可以理解的是，在栅格结构105包括多个栅格105a的情况下，多个栅格105a可以更有效地破坏声波在声表面波谐振器100(例如第一介质层103)中传播的周期性，进而可以更有效地抑制声表面波谐振器100(例如第一介质层103)中的杂散谐振。相对于其他相关技术，通过在声表面波谐振器100中的压电材料层102和第一介质层103之间，或者在第一介质层103和第二介质层104之间设置衰减层，利用衰减层对声波进行衰减来达到抑制杂散谐振 的目的而言，本申请实施例通过设置栅格结构105，且栅格结构105用于抑制声表面波谐振器100(例如第一介质层103)中的杂散谐振，由于本申请实施例是利用栅格结构105破坏声波在声表面波谐振器100(例如第一介质层103)中传播的周期性来达到抑制杂散谐振的目的，因而本申请实施例可以更显著地抑制声表面波谐振器100(例如第一介质层103)中的杂散谐振，更有效地提高声表面波谐振器100的性能。
以叉指换能器101的材料为Al(铝)，压电材料层102的材料为42°YX-LiTaO 3(钽酸锂)，第一介质层103的材料为二氧化硅(SiO 2)，第二介质层104的材料为硅(Si)，栅格结构105的材料为氧化铝(Al 2O 3)为例，图8为本申请实施例中图3所示的声表面波谐振器100对应的导纳曲线，横坐标表示频率，纵坐标表示导纳。图9中曲线a为本申请实施例中图3所示的声表面波谐振器100对应的导纳曲线，曲线b为相关技术中图5所示的声表面波谐振器100对应的导纳曲线，横坐标表示频率，纵坐标表示导纳，对比图9中的曲线a和曲线b可以看出，本申请实施例提供的声表面波谐振器100可以大大抑制在频率为3800MHz附近处的杂散谐振。此外，导纳曲线越尖，则Q值越高，由于在频率为3800MHz附近处，曲线b相对于曲线a更尖，因此本申请实施例提供的声表面波谐振器100在频率为3800MHz附近处的杂散谐振的Q值也明显降低。图10为图3所示的声表面波谐振器100中各层的位移场分布图，从图10中可以看出频率为3800MHz附近处的杂散谐振的位移场分布，图10中不同颜色表示不同的位移场幅度。对比图7的位移场分布图和图10的位移场分布图可以看出，相比于图7中的位移场分布图，图10中第一介质层103(即SiO 2)的位移场幅度大大降低，也就是说，第一介质层103(即SiO 2)中的板波谐振得到了很大的抑制。
在一些示例中，第一介质层103的温度频率系数(temperature coefficient of frequency，TCF)和压电材料层102的温度频率系数中一个为正数，一个为负数。
此处，可以是第一介质层103的温度频率系数为正数，压电材料层102的温度频率系数为负数；也可以是第一介质层103的温度频率系数为负数，压电材料层102的温度频率系数为正数。
此外，第一介质层103的温度频率系数的绝对值与压电材料层102的温度频率系数的绝对值可以相等，也可以不相等。
以压电材料层102为例，应当理解到，当压电材料层102的温度频率系数TCF为负数，温度升高时，压电材料层102的振动频率会向低频偏；当压电材料层102的温度频率系数TCF为正数，温度升高时，压电材料层102的振动频率会向高频偏。
同样的，当第一介质层103的温度频率系数TCF为负数，温度升高时，第一介质层103的振动频率会向低频偏；当第一介质层103的温度频率系数TCF为正数，温度升高时，第一介质层103的振动频率会向高频偏。
示例的，在压电材料层102的材料为LiTaO 3的情况下，温度升高时，LiTaO 3的振动频率会向低频偏，即LiTaO 3的温度频率系数TCF为负数；在第一介质层103的材料为SiO 2的情况下，温度升高时，SiO 2的振动频率会向高频偏，即SiO 2的温度频率系数TCF为正数。基于此，在一些示例中，可以是压电材料层102的材料为LiTaO 3，在第一介质层103的材料为SiO 2。
在本申请实施例中，由于第一介质层103的温度频率系数和压电材料层102的温 度频率系数中一个为正数，一个为负数，因此在温度升高时，压电材料层102的振动频率和第一介质层103的振动频率，一个向高频偏，一个向低频偏，例如压电材料层102的振动频率会向低频偏，第一介质层103的振动频率会向高频偏，这样一来，声表面波谐振器100的整体的振动频率不会发生偏移或偏移的较小，从而可以提高声表面波谐振器100的性能。在第一介质层103的温度频率系数的绝对值与压电材料层102的温度频率系数的绝对值相等的情况下，可以进一步增强声表面波谐振器100整体的温度频率稳定性，更进一步地提高声表面波谐振器100的性能。
本申请实施例对于栅格结构105的设置位置不进行限定，以下示例性地提供几种栅格结构105的设置位置。
第一种，栅格结构105设置于第一介质层103中。
在栅格结构105设置于第一介质层103中的情况下，在一些示例中，如图3所示，栅格结构105设置于第一介质层103内，即栅格结构105被第一介质层103包围，且栅格结构105与第一介质层103的靠近压电材料层102的表面(即图3中第一介质层103的上表面)以及第一介质层103的靠近第二介质层104的表面(即图3中第一介质层103的下表面)均不接触。
由于杂散谐振主要在第一介质层103内产生，因而将栅格结构105设置在第一介质层103内时，栅格结构105可以有效地破坏声波在第一介质层103中传播的周期性，进而可以有效抑制第一介质层103中的杂散谐振。
在另一些示例中，如图11a所示，栅格结构105设置于第一介质层103的靠近压电材料层102的表面(即图11a中第一介质层103的上表面)的一侧，且栅格结构105和第一膜层接触，第一膜层为与第一介质层103的靠近压电材料层102的表面接触的膜层。
此处，第一膜层可以为压电材料层102；也可以为设置在第一介质层103和压电材料层102之间的其它任意膜层。
在又一些示例中，如图11b所示，栅格结构105设置于第一介质层103的靠近第二介质层104的表面(即图11b中第一介质层103的下表面)的一侧，且栅格结构105和第二膜层接触，第二膜层为与第一介质层103的靠近第二介质层104的表面接触的膜层。
此处，第二膜层可以为第二介质层104；也可以为设置在第一介质层103和第二介质层104之间的其它任意膜层。
第二种，如图12a所示，栅格结构105设置于第一膜层中，第一膜层为与第一介质层103的靠近压电材料层102的表面(即图12a中第一介质层103的上表面)接触的膜层，且栅格结构105与第一介质层103接触。
此处，第一膜层可以为压电材料层102；也可以为设置在第一介质层103和压电材料层102之间的其它任意膜层。图12a以第一膜层为压电材料层102为例进行示意。
第三种，如图12b所示，栅格结构105设置于第二膜层中，第二膜层为与第一介质层103的靠近第二介质层104的表面(即图12b中第一介质层103的下表面)接触的膜层，且栅格结构105与第一介质层103接触。
此处，第二膜层可以为第二介质层104；也可以为设置在第一介质层103和第二 介质层104之间的其它任意膜层。图12b以第二膜层为第二介质层104为例进行示意。
第四种，如图12c所示，栅格结构105设置于第一介质层103和第一膜层中，第一膜层为与第一介质层103的靠近压电材料层102的表面(即图12c中第一介质层103的上表面)接触的膜层。
此处，第一膜层可以为压电材料层102；也可以为设置在第一介质层103和压电材料层102之间的其它任意膜层。图12c以第一膜层为压电材料层102为例进行示意。
第五种，如图12d所示，栅格结构105设置于第一介质层103和第二膜层中，第二膜层为与第一介质层103的靠近第二介质层104的表面(即图12d中第一介质层103的下表面)接触的膜层。
此处，第二膜层可以为第二介质层104；也可以为设置在第一介质层103和第二介质层104之间的其它任意膜层。图12d以第二膜层为第二介质层104为例进行示意。
基于上述，可以根据需要灵活设置栅格结构105的位置。
需要说明的是，图11a、图11b、图12a、图12b、图12c和图12d仅示意出叉指换能器101中的一对相邻的第一电极指1011b和第二电极指1012b，可以理解的是，叉指换能器101包括但不限于一对相邻的第一电极指1011b和第二电极指1012b。
在栅格结构105按照上述第二种、第三种、第四种和第五种方式设置的情况下，由于栅格结构105与第一介质层103接触，因而栅格结构105可以破坏声波在第一介质层103中传播的周期性，进而可以抑制声表面波谐振器100(例如第一介质层103)中的杂散谐振。
在一些示例中，如图13a所示，栅格结构105中的栅格105a沿第二方向Y延伸；其中，第二方向Y垂直于第一方向X，且第二方向Y平行于压电材料层102。
可以理解的是，栅格结构105中的栅格105a沿第二方向Y延伸，即栅格105a为一个连续的整体。
在另一些示例中，如图13b所示，栅格结构105中的栅格105a包括沿第二方向Y依次排列的相互断开的多个栅格单元1051，即栅格结构105中的栅格105a沿第二方向Y非连续；其中，第二方向Y垂直于第一方向X，且第二方向Y平行于压电材料层102。
此处，对于任一栅格105a包括的多个栅格单元1051的数量不进行限定，可以根据需要进行设置。例如，栅格105a可以包括沿第二方向Y依次排列的相互断开的两个栅格单元1051。又例如，栅格105a可以包括沿第二方向Y依次排列的相互断开的三个栅格单元1051。
此外，对于任一栅格105a包括的多个栅格单元1051，这多个栅格单元1051沿第二方向Y的长度可以相同，也可以不完全相同。
在声表面波谐振器100中的栅格结构105包括多个栅格105a的情况下，可以是如图13a所示，多个栅格105a均沿第二方向Y延伸，即多个栅格105a中的每个栅格105a都是一个连续的整体。也可以是如图13b所示，多个栅格105a中每个栅格105a均包括沿第二方向Y依次排列的相互断开的多个栅格单元1051。在此情况下，多个栅格105a中的各个栅格105a包括的多个栅格单元1051的数量可以相同，也可以不相同。当然还可以是如图13c所示，多个栅格105a中至少一个栅格105a沿第二方向Y延伸， 即多个栅格105a中至少一个栅格105a是一个连续的整体，且多个栅格105a中至少一个栅格105a包括沿第二方向Y依次排列的相互断开的多个栅格单元1051。此处，对于沿第二方向Y是一个连续的整体的栅格105a的数量、以及包括多个栅格单元1051的栅格105a的数量不进行限定，可以根据需要进行设置。
基于上述，对于栅格结构105中的栅格105a沿垂直于第一介质层103的截面的形状不进行限定，在一些示例中，如图3所示，栅格105a沿垂直于第一介质层103的截面的形状为矩形。在另一些示例中，如图14a所示，栅格105a沿垂直于第一介质层103的截面的形状为梯形。在又一些实施例中，如图14b所示，栅格105a沿垂直于第一介质层103的截面的形状为三角形。
需要说明的是，图14a和图14b仅示意出叉指换能器101中的一对相邻的第一电极指1011b和第二电极指1012b，可以理解的是，叉指换能器101包括但不限于一对相邻的第一电极指1011b和第二电极指1012b。
需要说明的是，栅格105a沿垂直于第一介质层103的截面的形状包括但不限于上述的矩形、梯形、三角形，还可以是其他规则或不规则的形状。在栅格105a沿垂直于第一介质层103的截面的形状为梯形或三角形的情况下，制作栅格105a时可以降低对工艺敏感度的依赖，也可以丰富设计自由度。
此外，在声表面波谐振器100中的栅格结构105包括多个栅格105a的情况下，多个栅格105a沿垂直于第一介质层103的截面的形状可以相同，也可以不相同。当多个栅格105a沿垂直于第一介质层103的截面的形状相同时，可以简化声表面波谐振器100的制备工艺。
实施例二
实施例二和实施例一的区别之处在于，实施例二相对于实施例一增加了第三介质层。
在本实施例二中，声表面波谐振器100包括：叉指换能器101、压电材料层102、第一介质层103、第二介质层104、栅格结构105、以及至少一层第三介质层。本实施例二对于与实施例一相同的部分不进行介绍，即对叉指换能器101、压电材料层102、第一介质层103、第二介质层104、栅格结构105不进行介绍，仅对与实施例一不相同的部分进行介绍，即仅对第三介质层进行介绍。
参考图15a和图15b，声表面波谐振器100还包括至少一层第三介质层107，第三介质层107设置在第一介质层103和第二介质层104之间；第三介质层107的声速大于或等于第一介质层103的声速，且小于或等于第二介质层104的声速。
在一些示例中，如图15a所示，声表面波谐振器100包括一层第三介质层107。在另一些示例中，如图15b所示，声表面波谐振器100包括两层或两层以上第三介质层107。
需要说明的是，图15a和图15b仅示意出叉指换能器101中的一对相邻的第一电极指1011b和第二电极指1012b，可以理解的是，叉指换能器101包括但不限于一对相邻的第一电极指1011b和第二电极指1012b。
此处，第三介质层107的声速介于第一介质层103的声速和第二介质层104的声 速之间，或者，第三介质层107的声速与第一介质层103的声速相同，或者，第三介质层107的声速与第二介质层104的声速相同。
示例的，第三介质层107的材料可以为二氧化硅、二氧化碲、氟氧化硅、碳化硅、金刚石、石英或蓝宝石中的一种或多种。
在声表面波谐振器100包括第三介质层107的情况下，可以实现对工艺具有更好的兼容性，例如在第一介质层103和第二介质层104之间粘附性不好的情况下，可以选取的第三介质层107的材料对第一介质层103和第二介质层104都具有良好的粘附性，从而可以提高工艺兼容性。此外，在声表面波谐振器100包括第三介质层107时，也可以丰富设计的自由度。
应当理解到，声表面波谐振器100还可以包括设置在第三介质层107和第一介质层103之间的其它层。当然声表面波谐振器100还可以包括设置在第三介质层107和第二介质层104之间的其它层。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (18)

  1. 一种声表面波谐振器，其特征在于，包括：
    第二介质层；
    第一介质层，设置在所述第二介质层上方；
    压电材料层，设置在所述第一介质层上方；
    叉指换能器，设置在所述压电材料层上方，所述叉指换能器包括沿第一方向依次交替排布的第一电极指和第二电极指；以及
    栅格结构，设置于所述第一介质层中，用于抑制所述声表面波谐振器的杂散谐振；
    其中，所述第一介质层的声速小于所述压电材料层的声速，所述第二介质层的声速大于所述压电材料层的声速。
  2. 根据权利要求1所述的声表面波谐振器，其特征在于，所述栅格结构包括沿所述第一方向依次排列的多个栅格。
  3. 根据权利要求1或2所述的声表面波谐振器，其特征在于，所述栅格结构用于通过抑制所述第一介质层中的杂散谐振，来抑制所述声表面波谐振器的杂散谐振。
  4. 根据权利要求1-3任一项所述的声表面波谐振器，其特征在于，所述栅格结构设置于所述第一介质层内，且与所述第一介质层的靠近所述压电材料层的表面以及所述第一介质层的靠近所述第二介质层的表面均不接触。
  5. 根据权利要求1-3任一项所述的声表面波谐振器，其特征在于，所述栅格结构设置于所述第一介质层的靠近所述压电材料层的表面的一侧，且所述栅格结构和第一膜层接触，所述第一膜层为与所述第一介质层的靠近所述压电材料层的表面接触的膜层。
  6. 根据权利要求5所述的声表面波谐振器，其特征在于，所述第一膜层为压电材料层。
  7. 根据权利要求1-3任一项所述的声表面波谐振器，其特征在于，所述栅格结构设置于所述第一介质层的靠近所述第二介质层的表面的一侧，且所述栅格结构和第二膜层接触，所述第二膜层为与所述第一介质层的靠近所述第二介质层的表面接触的膜层。
  8. 根据权利要求7所述的声表面波谐振器，其特征在于，所述第二膜层为所述第二介质层。
  9. 根据权利要求2所述的声表面波谐振器，其特征在于，所述栅格沿第二方向延伸；
    其中，所述第二方向垂直于所述第一方向，且所述第二方向平行于所述压电材料层。
  10. 根据权利要求2所述的声表面波谐振器，其特征在于，所述栅格包括沿第二方向依次排列的相互断开的多个栅格单元；
    其中，所述第二方向垂直于所述第一方向，且所述第二方向平行于所述压电材料层。
  11. 根据权利要求2所述的声表面波谐振器，其特征在于，所述栅格沿垂直于所述第一介质层的截面的形状为矩形、梯形或三角形。
  12. 根据权利要求1-11任一项所述的声表面波谐振器，其特征在于，所述声表面波谐振器还包括至少一层第三介质层，所述第三介质层设置在所述第一介质层和所述第二介质层之间；
    所述第三介质层的声速大于或等于所述第一介质层的声速，且小于或等于所述第二介质层的声速。
  13. 根据权利要求1-12任一项所述的声表面波谐振器，其特征在于，所述第一介质层的温度频率系数和所述压电材料层的温度频率系数中一个为正数，一个为负数。
  14. 根据权利要求1-13任一项所述的声表面波谐振器，其特征在于，所述栅格结构的材料包括氧化硅、氮化硅、氧化铝、铝、铜、钌、钼、铂、钨中的一种或多种。
  15. 根据权利要求1-14任一项所述的声表面波谐振器，其特征在于，所述第一介质层的材料包括二氧化硅、二氧化碲或氟氧化硅中的一种或多种。
  16. 根据权利要求1-15任一项所述的声表面波谐振器，其特征在于，所述第二介质层的材料包括碳化硅、金刚石、石英或蓝宝石中的一种或多种。
  17. 一种声学滤波器，其特征在于，包括多个级联的声表面波谐振器；其中，所述声表面波谐振器为如权利要求1-16任一项所述的声表面波谐振器。
  18. 一种电子设备，其特征在于，包括声学滤波器、处理器和印刷电路板，所述声学滤波器和所述处理器均设置在所述印刷电路板上；
    其中，所述声学滤波器为如权利要求17所述的声学滤波器。
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WO2020146973A1 (zh) * 2019-01-14 2020-07-23 华为技术有限公司 声表面波滤波器及其制备方法、射频前端芯片和移动终端
CN112702036A (zh) * 2020-12-18 2021-04-23 广东广纳芯科技有限公司 一种具有poi结构的兰姆波谐振器

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CN109560785A (zh) * 2017-09-27 2019-04-02 中国科学院半导体研究所 兰姆波谐振器及其制备方法
WO2020146973A1 (zh) * 2019-01-14 2020-07-23 华为技术有限公司 声表面波滤波器及其制备方法、射频前端芯片和移动终端
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