WO2023145280A1 - Cellule solaire, module de cellules solaires et procédé de fabrication de cellule solaire - Google Patents

Cellule solaire, module de cellules solaires et procédé de fabrication de cellule solaire Download PDF

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Publication number
WO2023145280A1
WO2023145280A1 PCT/JP2022/045649 JP2022045649W WO2023145280A1 WO 2023145280 A1 WO2023145280 A1 WO 2023145280A1 JP 2022045649 W JP2022045649 W JP 2022045649W WO 2023145280 A1 WO2023145280 A1 WO 2023145280A1
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Prior art keywords
solar cell
photoelectric conversion
metal layer
conversion substrate
metal
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PCT/JP2022/045649
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English (en)
Japanese (ja)
Inventor
怜志 砂廣
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株式会社カネカ
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Publication of WO2023145280A1 publication Critical patent/WO2023145280A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells

Definitions

  • the present invention relates to a solar cell, a solar cell module, and a method for manufacturing a solar cell.
  • a solar cell has a structure in which unevenness is provided on the surface of a photoelectric conversion substrate so that light taken into the photoelectric conversion substrate is confined within the photoelectric conversion substrate (see, for example, Patent Documents 1).
  • a comb-like collecting electrode is formed on the light-receiving side surface for extracting electricity from the photoelectric conversion substrate.
  • silver paste having a particle size in the range of 0.1 to 0.5 ⁇ m is applied to the light-receiving side surface of a photoelectric conversion substrate having fine unevenness on the surface, and is baked to form a collecting electrode. forming In this way, Patent Document 1 states that the contact resistance between the collecting electrode and the photoelectric conversion substrate can be reduced.
  • the solar cell of Patent Document 1 the silver paste is applied thicker than the height of the convex portions of the surface unevenness, and light cannot be received in the portions where the silver paste is applied. Therefore, the solar cell of Patent Literature 1 has room for improvement to further improve the light-receiving area.
  • One aspect of the present invention for solving the above-described problems is a solar cell in which a metal layer is laminated on a photoelectric conversion substrate, the photoelectric conversion substrate having a plurality of protrusions on its first main surface. a textured structure, wherein the metal layer is thinner than the height of the protrusions and covers a part of the protrusions, and the protrusions have tops exposed from the metal layer. Battery.
  • the apex of the convex portion of the photoelectric conversion substrate is exposed from the metal layer, light can be incident from the apex portion, and the light receiving area can be increased compared to the conventional case.
  • the photoelectric conversion substrate has a transparent conductive oxide layer laminated on the photoelectric conversion part, and the transparent conductive oxide layer constitutes the convex part.
  • the texture structure has a plurality of recesses formed adjacent to the plurality of protrusions, the depth of the recesses is 1 ⁇ m or more, and the metal layer includes a plurality of metal particles.
  • the metal particles have a number average particle diameter of 10 nm or more and less than 100 nm, and are filled from the bottom of the recess to a height of 1/20 or more and 2/3 or less of the depth of the recess.
  • a preferable aspect is that the metal layer surrounds the top of the convex portion when the photoelectric conversion substrate is viewed from above.
  • a preferred aspect has a wiring member and a conductive adhesive, the wiring member is connected to a part of the metal layer via the conductive adhesive, and the convex portion exposed from the metal layer is , is covered while being in contact with the conductive adhesive.
  • One aspect of the present invention has the above solar cell, a first sealing member, and a second sealing member, and the solar cell is sandwiched between the first sealing member and the second sealing member.
  • the first sealing member has an adhesive portion, and the solar cell is adhered to the first sealing member with the metal layer in close contact with the adhesive portion,
  • the projecting portion exposed from the metal layer is a solar cell module that is covered while being in contact with the adhesive portion.
  • an anchor effect works between the convex portion of the photoelectric conversion substrate and the adhesive portion of the first sealing member, and the adhesive strength between the photoelectric conversion substrate and the first sealing member is improved compared to the conventional art. can.
  • One aspect of the present invention is the above-described method for manufacturing a solar cell, comprising: a coating step of coating a metal ink containing metal particles having a number average particle size of 10 nm or more and less than 100 nm on the photoelectric conversion substrate;
  • the method for manufacturing a solar cell includes a heating step of heating the photoelectric conversion substrate coated with ink at a heating temperature of 100° C. or higher and 180° C. or lower.
  • the metal layer can be formed at a relatively low temperature, and the manufacturing cost can be reduced.
  • the light-receiving area per unit area can be improved compared to the conventional art.
  • FIG. 1 is an explanatory diagram of a solar cell module according to a first embodiment of the present invention, where (a) is a schematic perspective view of the solar cell module and (b) is a cross-sectional view taken along the line AA of (a). . Note that hatching is omitted for easy understanding.
  • FIG. 2 is an end view of the BB section of the solar cell of FIG. 1(a); Note that hatching is omitted for easy understanding.
  • FIG. 2 is an end view of the cross section CC of the solar cell of FIG. 1(a); Note that hatching is omitted for easy understanding.
  • Fig. 1(a) is an exploded perspective view of the main part of the solar cell of Fig.
  • FIG. 5 is a cross-sectional view of the photoelectric conversion substrate of FIG. 4; Note that hatching is omitted for easy understanding. It is explanatory drawing of the solar cell of Fig.1 (a), (a) is the top view seen from the surface side, (b) is the top view seen from the back surface side.
  • FIG. 2 is an explanatory diagram of an optical path in the solar cell when the solar cell module of FIG. 1 is irradiated with light, and is a cross-sectional view of a main part of the solar cell. To facilitate understanding, hatching is omitted and the optical paths are indicated by arrows.
  • a solar cell module 1 according to the first embodiment of the present invention is a photoelectric conversion device that converts light into electricity, and receives light on at least one main surface. As shown in FIG. 1(a), the solar cell module 1 includes a solar cell string 2, a first sealing member 3, and a second sealing member 5 as main constituent members.
  • the solar cell string 2 includes a plurality of solar cells 10 (10a to 10c), wiring members 11 (11a and 11b), and a conductive adhesive 12, as shown in FIG. 1(b). Batteries 10 (10a to 10c) are connected in series by wiring members 11 (11a, 11b).
  • the solar cell 10 includes a photoelectric conversion substrate 20, a first collecting electrode 21, and a second collecting electrode 22, as shown in FIGS.
  • the photoelectric conversion substrate 20 is, as shown in FIGS. It is a transparent conductive substrate in which a transparent electrode layer 31 is laminated and a second transparent electrode layer 32 is laminated on the second main surface 36 side. Further, the photoelectric conversion substrate 20 has a first texture structure 37 formed on a first main surface 35 serving as a main surface on the first sealing member 3 side, and a second main surface serving as a main surface on the second sealing member 5 side. A second textured structure 38 is formed on surface 36 .
  • the photoelectric conversion part 30 is a part that has a PN junction and converts light energy into electrical energy. As shown in FIG. 5 , the photoelectric conversion section 30 has a first intrinsic semiconductor layer 41 and a first conductivity type semiconductor layer 42 laminated in this order on a first main surface 45 of a semiconductor substrate 40 , and a second main surface 46 . A second intrinsic semiconductor layer 43 and a second conductivity type semiconductor layer 44 are stacked thereon in this order.
  • the semiconductor substrate 40 is an n-type or p-type semiconductor substrate, specifically, an n-type or p-type crystalline silicon substrate.
  • a single crystal silicon substrate or a polycrystalline silicon substrate can be used as the semiconductor substrate 40 .
  • the semiconductor substrate 40 has pyramid-shaped semiconductor-side texture structures 47 and 48 formed on the surfaces of the first main surface 45 and the second main surface 46, respectively.
  • the first intrinsic semiconductor layer 41 is a silicon thin film that does not substantially contain dopants, and preferably has a dopant concentration of 1/100 or less of the dopant concentration of the first conductivity type semiconductor layer 42 .
  • the first conductivity type semiconductor layer 42 is an n-type or p-type silicon-based thin film layer containing a dopant, and is a p-type silicon layer in this embodiment.
  • the second intrinsic semiconductor layer 43 is a silicon thin film that does not substantially contain dopants, and preferably has a dopant concentration of 1/100 or less of the dopant concentration of the second conductivity type semiconductor layer 44 .
  • the second-conductivity-type semiconductor layer 44 is a silicon layer containing a dopant and having a conductivity type opposite to that of the first-conductivity-type semiconductor layer 42 . That is, when the conductivity type of the semiconductor layer 42 of the first conductivity type is n-type, the conductivity type of the semiconductor layer 44 of the second conductivity type is p-type, and when the conductivity type of the semiconductor layer 42 of the first conductivity type is p-type, , the conductivity type of the second conductivity type semiconductor layer 44 is n-type.
  • the first conductivity type semiconductor layer 42 is a p-type silicon layer, so the second conductivity type semiconductor layer 44 is formed of an n-type silicon layer.
  • the transparent electrode layers 31 and 32 are transparent conductive layers having transparency and conductivity, and are specifically made of a transparent conductive oxide such as indium tin oxide (ITO) or tungsten-doped indium oxide (IWO). It is a transparent conductive oxide layer.
  • a transparent conductive oxide such as indium tin oxide (ITO) or tungsten-doped indium oxide (IWO). It is a transparent conductive oxide layer.
  • the first texture structure 37 is formed by forming the semiconductor layers 41 and 42 and the first transparent electrode layer 31 following the semiconductor-side texture structure 47 of the underlying semiconductor substrate 40 . That is, the first texture structure 37 has pyramid-shaped unevenness, and includes a plurality of protrusions 51 , like the semiconductor-side texture structure 47 of the semiconductor substrate 40 . As shown in FIG. 4, the convex portion 51 has a quadrangular pyramid shape, the cross-sectional area of which gradually decreases from the first transparent electrode layer 31 side toward the top portion 52, and the top portion 52 is sharp. From another point of view, the first texture structure 37 has a concave portion 55 formed by adjacent convex portions 51, 51, as shown in FIG.
  • the concave portion 55 has an inverted square pyramid shape, and the bottom portion 56 is pointed.
  • the depth of the concave portion 55 that is, the height of the convex portion 51 (the distance between the top portion 52 and the bottom portion 56 in the thickness direction) is larger than the thickness of the first collector electrode 21 and is 1 ⁇ m or more and 10 ⁇ m or less, as shown in FIG. Preferably.
  • the second texture structure 38 is formed by forming the semiconductor layers 43 and 44 and the second transparent electrode layer 32 following the semiconductor-side texture structure 48 of the underlying semiconductor substrate 40 . That is, the second texture structure 38 has pyramid-shaped unevenness, and includes a plurality of protrusions 61 , like the semiconductor-side texture structure 48 of the semiconductor substrate 40 . As shown in FIG. 4, the convex portion 61 has a quadrangular pyramid shape, the cross-sectional area of which gradually decreases from the second transparent electrode layer 32 side toward the top portion 62, and the top portion 62 is sharp. From another point of view, the second texture structure 38 has recesses 65 formed by adjacent protrusions 61, 61, as shown in FIG.
  • the recess 65 has an inverted quadrangular pyramid shape with a sharp bottom 66 .
  • the depth of the concave portion 65 that is, the height of the convex portion 61 (the distance between the top portion 62 and the bottom portion 66 in the thickness direction) is, as shown in FIG. Preferably.
  • the first collector electrode 21 forms a pair with the second collector electrode 22 and is an extraction electrode for extracting from the photoelectric conversion substrate 20 electrical energy photoelectrically converted by the photoelectric conversion substrate 20 together with the second collector electrode 22 .
  • the collecting electrodes 21 and 22 are partially formed on both main surfaces 35 and 36 of the photoelectric conversion substrate 20, and are mainly composed of metal electrode layers 70a and 70b.
  • the metal electrode layers 70a and 70b are metal layers having higher conductivity than the transparent electrode layers 31 and 32, and are reflective electrode layers capable of reflecting light.
  • the metal electrode layers 70a and 70b are formed of a plurality of metal particles 71 as shown in FIGS.
  • the thickness of the metal electrode layers 70a and 70b is thinner than the height of the protrusions 51 and 61, preferably 0.1 ⁇ m or more and 10 ⁇ m or less, more preferably 0.2 ⁇ m or more and 5 ⁇ m or less, and 1 ⁇ m or less. is more preferred.
  • the metal particles 71 are nano-sized particles and have a diameter smaller than the height of the projections 51 and 61 .
  • Metal particles 71 preferably have a number average particle diameter of 10 nm or more and less than 100 nm. The number average particle size can be calculated, for example, by checking the particle size of 100 samples with a scanning electron microscope or a transmission electron microscope and calculating the arithmetic mean of the particle sizes of 100 samples.
  • the metal particles 71 can be made of, for example, gold, silver, copper, platinum, aluminum, nickel, palladium, or the like. Silver particles are used as the metal particles 71 of the present embodiment.
  • the metal electrode layers 70a and 70b are preferably formed by an inkjet printing method or a screen printing method, and more preferably formed by an inkjet printing method.
  • the metal electrode layers 70a and 70b of the present embodiment are formed by applying metal ink containing metal particles 71 onto the photoelectric conversion substrate 20, as will be described later.
  • the first collector electrode 21 when the photoelectric conversion substrate 20 is viewed from the first main surface 35 side, the first collector electrode 21 includes a first busbar electrode portion 80a and a first finger electrode portion 81a.
  • the second collector electrode 22 is composed of a second busbar electrode portion 80b and second finger electrode portions 81b when the photoelectric conversion substrate 20 is viewed from the second main surface 36 side. It is
  • the busbar electrode portions 80a and 80b are portions that have width in the horizontal direction and extend in the vertical direction.
  • the finger electrode portions 81a and 81b are portions extending like comb teeth from intermediate portions of the busbar electrode portions 80a and 80b.
  • the finger electrode portions 81a and 81b extend in a direction crossing the extending direction of the busbar electrode portions 80a and 80b, and in this embodiment extend in a direction orthogonal to the extending direction of the busbar electrode portions 80a and 80b. That is, the finger electrode portions 81a and 81b have a width in the vertical direction and extend in the horizontal direction. Finger electrode portions 81 a and 81 b have a width narrower than that of busbar electrode portions 80 a and 80 b and wider than that of protrusions 51 and 61 .
  • the wiring member 11 is a tab wiring that connects adjacent solar cells 10, 10 as shown in FIG.
  • the wiring member 11a has a first connection portion connected to the busbar electrode portion 80a of one of the adjacent solar cells 10a and 10b, and a second connection portion connected to the busbar electrode portion 80b of the other solar cell 10b. has a department.
  • Wiring member 11b has a first connection portion connected to busbar electrode portion 80a of solar cell 10b and a second connection portion connected to busbar electrode portion 80b of solar cell 10c adjacent to solar cell 10b on the opposite side of solar cell 10a. has a department.
  • the conductive adhesive 12 adheres the connecting portion of the wiring member 11 to the busbar electrode portions 80 a and 80 b of the solar cell 10 .
  • the conductive adhesive 12 is not particularly limited as long as it has conductivity and adhesiveness. Solder, for example, can be used as the conductive adhesive 12 .
  • the first sealing member 3 is a member that spreads in a plane and seals the solar cell string 2 together with the second sealing member 5 .
  • the sealing part 100 is composed of a transparent insulating substrate or a transparent insulating sheet having translucency and insulating properties, and for example, a glass substrate or a resin sheet can be used.
  • the adhesive portion 101 is made of a translucent adhesive having translucency and adhesiveness, and is more preferably thermoplastic resin. For example, an EVA sheet can be used as the adhesive portion 101 .
  • the second sealing member 5 spreads in a plane and includes a sealing portion 102 and an adhesive portion 103 .
  • the sealing portion 102 is composed of an insulating substrate or an insulating sheet having insulating properties, and for example, a glass substrate or a resin sheet can be used.
  • the adhesive portion 103 is made of an adhesive material having adhesiveness, and is more preferably made of a thermoplastic resin.
  • an EVA sheet can be used as the adhesive portion 101 .
  • the method of manufacturing the solar cell module 1 of the present embodiment includes, as main steps, a photoelectric conversion substrate forming step, a collecting electrode forming step, a wiring attaching step, and a sealing step.
  • the semiconductor substrate 40 on which the semiconductor-side texture structures 47 and 48 are formed in advance is subjected to plasma CVD on the first main surface 45 of the semiconductor substrate 40.
  • a first intrinsic semiconductor layer 41 and a first conductivity type semiconductor layer 42 are formed, and a second intrinsic semiconductor layer 43 and a second conductivity type semiconductor layer 44 are formed on a second main surface 46 of a semiconductor substrate 40 to form a photoelectric conversion section.
  • 30 is formed (photoelectric conversion portion forming step).
  • the first transparent electrode layer 31 is formed on the first main surface 45 side of the photoelectric conversion body 30, and the second transparent electrode layer 32 is formed on the second main surface 46 side (transparent electrode layer formation). step), and the photoelectric conversion substrate 20 is formed (photoelectric conversion substrate forming step).
  • the texture structure 37 reflecting the texture structure 47 of the semiconductor substrate 40 is formed on the first principal surface 35, and the texture structure 48 of the semiconductor substrate 40 is reflected on the second principal surface 36.
  • a textured structure 38 is formed.
  • a metal ink containing metal particles 71 is applied in a predetermined pattern on the first main surface 35 and the second main surface 36 of the photoelectric conversion substrate 20 (application step), and the metal ink is applied.
  • the photoelectric conversion substrate 20 thus obtained is heated at a heating temperature T1 for a heating time t1 and baked (heating step) to form collecting electrodes 21 and 22 (collecting electrode forming step).
  • the metal electrode layers 70 a and 70 b constituting the collecting electrodes 21 and 22 are formed by filling the bottoms 56 and 66 of the concave portions 55 and 65 of the photoelectric conversion substrate 20 with the metal particles 71 .
  • the metal particles 71 are preferably filled to a height of 1/20 or more and 2/3 or less of the depth of the recesses 55 and 65 from the bottoms 56 and 66 of the recesses 55 and 65, and 1/10 or more and 1/2 or less. is more preferably filled up to a height of Holes are formed in the metal electrode layers 70a and 70b constituting the collecting electrodes 21 and 22 so as to avoid the projections 51 and 61, as shown in FIGS.
  • the top portions 52 and 62 of the convex portions 51 and 61 of the photoelectric conversion substrate 20 are not covered with the metal particles 71, and the vicinity of the top portions 52 and 62 are exposed from the holes of the collector electrodes 21 and 22, and the exposed regions 110 are exposed. is formed.
  • the metal electrode layers 70a and 70b surround the apexes 52 and 62 of the protrusions 51 and 61 when viewed from above as shown in FIG.
  • the metal ink used at this time is obtained by dispersing metal particles 71 in a dispersion liquid.
  • the heating temperature T1 at this time is a temperature at which the dispersion solvent volatilizes or vaporizes and substantially only the metal particles 71 remain as the metal electrode layers 70a and 70b.
  • the heating temperature T1 is preferably 100° C. or higher and 180° C. or lower, and more preferably 150° C. or lower.
  • the heating time t1 is appropriately set together with the heating temperature T1. For example, it is preferably 5 minutes or more and 2 hours or less, and more preferably 20 minutes or more and 1 hour or less.
  • an inorganic solvent such as water or an organic solvent may be used as long as only the metal particles 71 substantially remain after heating at the heating temperature T1.
  • a mixed solvent of hydrocarbon and alcohol can be used as the dispersion solvent.
  • the wiring member 11 is adhered to the busbar electrode portions 80a and 80b of the collecting electrodes 21 and 22 via the conductive adhesive 12, and the solar cells 10 are electrically connected in series or in parallel by the wiring member 11.
  • a solar cell string 2 is formed (wiring connection step).
  • the conductive adhesive 12 covers the collector electrodes 21 and 22 and the exposed regions 110 of the convex portions 51 and 61 in the busbar electrode portions 80a and 80b while being in contact therewith. Exposed regions 110 of portions 51 and 61 are encroaching. That is, the conductive adhesive 12 and the exposed regions 110 of the projections 51 and 61 are engaged with each other.
  • the solar cell string 2 is sandwiched between the sealing members 3 and 5 and sealed (sealing step). After that, post-processing such as wiring is performed in the same manner as in conventional solar cell modules, and the solar cell module 1 is completed. do.
  • the adhesive portions 101 and 103 of the sealing members 3 and 5 are covered while being in contact with the wiring member 11 and the exposed regions 110 of the collector electrodes 21 and 22 and the convex portions 51 and 61 in the finger electrode portions 81a and 81b. , and the exposed regions 110 of the protrusions 51 and 61 are encroaching. That is, the adhesive portions 101 and 103 of the sealing members 3 and 5 and the exposed regions 110 of the convex portions 51 and 61 are engaged with each other.
  • the thickness of the metal electrode layers 70a and 70b is thinner than the height of the protrusions 51 and 61 and partially covers the protrusions 51 and 61. are exposed from the metal electrode layers 70a and 70b. Therefore, as shown in FIG. 7, light can be incident from the top portions 52 and 62, the light receiving area can be increased compared to the conventional art, and the power generation efficiency can be improved.
  • the convex portions 51 and 61 are formed on the transparent electrode layers 31 and 32 laminated on the photoelectric conversion section 30, most of the photoelectric conversion section 30 can receive light. .
  • the metal particles 71 forming the metal electrode layers 70a and 70b have a number average particle diameter of 10 nm or more and less than 100 nm, and It is filled to a height of 1/20 or more and 2/3 or less of the depth of the recesses 55 and 65 . Therefore, the metal particles 71 penetrate deeply into the bottoms 56, 66 of the recesses 55, 65, and the contact resistance can be reduced as compared with the conventional case.
  • the metal electrode layers 70a and 70b surround the tops 52 and 62 of the projections 51 and 61 when the photoelectric conversion substrate 20 is viewed from above.
  • 70a and 70b are continuous in the planar direction. That is, since the conductive paths of the metal electrode layers 70a and 70b are not blocked by the protrusions 51 and 61, electric power can flow stably, and the protrusions 51 and 61 are exposed from the metal electrode layers 70a and 70b. However, reliability as an electrode can be ensured.
  • the wiring member 11 is connected to part of the metal electrode layer 70a (70b) via the conductive adhesive 12, and is exposed from the metal electrode layer 70a (70b).
  • the projected portions 51 ( 61 ) of the photoelectric conversion substrate 20 are covered while being in contact with the conductive adhesive 12 . Therefore, an anchor effect works between the convex portion 51 (61) and the conductive adhesive 12, and the adhesive strength at the interface between the conductive adhesive 12 and the photoelectric conversion substrate 20 can be improved.
  • the solar cell 10 is adhered to the sealing members 3 and 5 with the metal electrode layers 70a and 70b in close contact with the bonding portions 101 and 103 of the sealing members 3 and 5.
  • the convex portions 51 and 61 of the photoelectric conversion substrate 20 exposed from the metal electrode layers 70a and 70b are covered while being in contact with the adhesive portions 101 and 103, respectively. Therefore, an anchor effect is produced between the convex portions 51 and 61 and the adhesive portions 101 and 103, and the adhesive strength between the photoelectric conversion substrate 20 and the sealing members 3 and 5 can be improved.
  • the photoelectric conversion substrate 20 has pyramid-shaped texture structures 37 and 38 with quadrangular pyramid-shaped protrusions 51 and 61, but the present invention is not limited to this.
  • the shape of the protrusions 51 and 61 may be a polygonal pyramid such as a triangular pyramid, a pentagonal pyramid, or a hexagonal pyramid, or may be conical.
  • the photoelectric conversion substrate 20 has the texture structures 37, 38 on both main surfaces 35, 36, but the present invention is not limited to this.
  • the texture structure 37 may be provided only on the main surface 35 on the light receiving side.
  • the solar cell 10 is a crystalline silicon solar cell using the semiconductor substrate 40 made of silicon as a supporting substrate, but the present invention is not limited to this.
  • the solar cell 10 may be another type of solar cell with a collecting electrode 21 on the light receiving side.
  • solar cell 10 may be a PERC type solar cell.
  • each constituent member can be freely replaced or added between the embodiments.
  • first sealing member 3 first sealing member 5 second sealing member 10, 10a, 10b solar cell 11, 11a, 11b wiring member 12 conductive adhesive 20 photoelectric conversion substrate 30 photoelectric conversion part 31 first transparent electrode layer ( transparent conductive oxide layer) 32 Second transparent electrode layer (transparent conductive oxide layer) 35 first main surface 37 first texture structure 38 second texture structure 51, 61 convex portions 52, 62 top portions 55, 65 concave portions 56, 66 bottom portions 70a, 70b metal electrode layer (metal layer) 71 metal particles 101, 103 bonding portion

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Abstract

La présente invention concerne une cellule solaire, un module de cellules solaires et un procédé de fabrication d'une cellule solaire, dans lesquels la zone de réception de lumière par unité de surface est améliorée par rapport à l'état de la technique.　La présente invention comprend une couche métallique stratifiée sur un substrat de conversion photoélectrique, le substrat de conversion photoélectrique comprenant une structure de texture ayant une pluralité de saillies sur une première surface principale, la couche métallique étant plus mince que la hauteur des saillies et recouvrant une partie des saillies, et les saillies ayant des sommets qui sont exposés à partir de la couche métallique.
PCT/JP2022/045649 2022-01-31 2022-12-12 Cellule solaire, module de cellules solaires et procédé de fabrication de cellule solaire WO2023145280A1 (fr)

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JP2022-013155 2022-01-31

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Citations (8)

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WO2007040065A1 (fr) * 2005-09-30 2007-04-12 Sanyo Electric Co., Ltd. Batterie solaire et module de batterie solaire
US20100065117A1 (en) * 2008-09-16 2010-03-18 Jinsung Kim Solar cell and texturing method thereof
JP2013524514A (ja) * 2010-03-26 2013-06-17 テトラサン インコーポレイテッド 高効率結晶太陽電池における遮蔽された電気接点およびパッシベーション化誘電体層を通じたドーピング、ならびにその構造および製造方法
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