WO2023134313A1 - Système de nettoyage mégasonique pour tranche de grande taille - Google Patents

Système de nettoyage mégasonique pour tranche de grande taille Download PDF

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Publication number
WO2023134313A1
WO2023134313A1 PCT/CN2022/134700 CN2022134700W WO2023134313A1 WO 2023134313 A1 WO2023134313 A1 WO 2023134313A1 CN 2022134700 W CN2022134700 W CN 2022134700W WO 2023134313 A1 WO2023134313 A1 WO 2023134313A1
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WIPO (PCT)
Prior art keywords
wafer
energy
sound wave
energy converter
oscillator
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PCT/CN2022/134700
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English (en)
Chinese (zh)
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咸威
咸寿荣
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北京东方金荣超声电器有限公司
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Publication of WO2023134313A1 publication Critical patent/WO2023134313A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning

Definitions

  • the present application relates to the technical field of semiconductor cleaning, in particular to a megasonic cleaning system for large-sized wafers.
  • Ultrasonic cleaning technology is one of the most commonly used industrial cleaning technologies.
  • Traditional ultrasonic cleaning technology achieves the purpose of cleaning by removing stains on the surface of objects through the cavitation effect of 20kHz-100kHz ultrasonic waves in liquids.
  • excessive ultrasonic cavitation will cause certain damage to the surface of the object.
  • precision components such as semiconductor devices and optical precision parts
  • traditional high-frequency ultrasonic cleaning will cause damage to the surface.
  • the higher the ultrasonic frequency the smaller the particle size of the cleaned impurity particles.
  • Traditional ultrasonic cleaning with a maximum frequency of 100kHz is difficult to clean impurity particles below 1 micron.
  • the ultrasonic wave with a frequency higher than 400kHz propagates in the liquid, it can form a very thin acoustic boundary layer with a large velocity gradient near the surface of the object to be cleaned, and its impurity particles will fall off from the surface of the device under the vibration of the megahertz frequency of the liquid and can be cleaned.
  • Micron and submicron impurity particles on the surface of components realize ultra-precision cleaning process.
  • the high-frequency ultrasonic cleaning process will not cause damage to the surface of the cleaned parts, and can effectively solve the corrosion or damage caused by cleaning precision components. Therefore, megasonic devices capable of emitting megahertz levels are widely used in the field of semiconductor manufacturing, and in addition to cleaning, they can also play an important role in key processes such as chemical mechanical polishing, development, adhesive removal, metal stripping, and etching. .
  • the existing megasonic cleaning technology is mainly divided into three types: tank type, spray type, and bonding type.
  • the tank type is similar to traditional ultrasonic cleaning.
  • the megasonic emission device is placed at the bottom of the tank, and the wafer is placed in the tank during cleaning.
  • the disadvantage of this method is that the megasonic sound field received by the wafer surface gradually weakens from bottom to top, the distribution is uneven and the cleaning effect is affected, and the cleaning liquid is easy to be polluted twice in the tank.
  • the spray type is to make the megasonic emitter into a nozzle form, and the megasonic falls on the wafer with the water flow, which has higher sound transmission efficiency than the trough-type megasonic device placed at the bottom of the processing tank, and can avoid secondary secondary pollution.
  • the disadvantage is that the megasonic generator is far away from the wafer, the transmission efficiency of the acoustic energy is still impaired, and a large flow of cleaning fluid is required to work, and a lot of cleaning fluid is wasted.
  • the bonding method is the most optimized method in the prior art.
  • the megasonic emission device 2 ′ is usually placed close to the surface of the wafer 1 ′, with a gap between them.
  • the megasonic device is fixed, the wafer rotates, and the cleaning liquid is continuously delivered to the wafer by the liquid supply device 3 ′.
  • the energy transmission efficiency is very high.
  • the power density of the megasonic emitting surface only needs 2W/cm 2 to achieve the effect, while the spray and slot megasonic devices usually need 5W/cm2 cm 2 or even higher power densities.
  • the bonding type only needs a small amount of cleaning solution to complete the cleaning, which can greatly save the use of cleaning solution compared with the other two methods.
  • the megasonic emission device can be made into a fan-shaped megasonic The device realizes that when the wafer is rotated, the megasonic energy received from the edge to the center of the circle is linearly weakened, thereby obtaining uniform acoustic energy on the front.
  • the defect of this technology is that the size of the megasonic emission surface needs to match the size of the wafer, which requires the size of the piezoelectric ceramic sheet in the megasonic emission device to match the size of the wafer to be cleaned.
  • the larger the wafer the larger the wafer.
  • the traditional method is to make a fan-shaped piezoelectric ceramic sheet with a radius of 6 inches and a center angle of more than 30 degrees. It is very difficult to manufacture piezoelectric ceramics of this size, so it will be divided into two parts in practical applications. It is carried out by splicing ceramic pieces together, and there will be seams in this way, resulting in uneven sound field.
  • the size of wafers continues to expand, such as wafers above 14, 16, and 20 inches, which makes it more difficult for this method to be realized by a single fan-shaped ceramic sheet, and multiple ceramic sheets must be spliced.
  • the more seams the worse the uniformity of the emitted acoustic energy field.
  • the megasonic sound field is uniform on the entire surface, and the cleaning efficiency of the megasonic device with a small area will also decrease.
  • This application provides a megasonic cleaning system for large-sized wafers, which is used to solve the problem that the piezoelectric ceramic sheet in the prior art is limited by the size of the wafer and needs to increase with the increase of the wafer size, so as to save cleaning time.
  • the use of smaller piezoelectric ceramic sheets can process large-sized wafers.
  • a megasonic cleaning system for large-sized wafers includes:
  • a rotating seat rotatably arranged on the seat body
  • an oscillator connected to the rotating base and rotating with the rotating base
  • the first drive mechanism is connected to the rotating base and is used to drive the rotating base to rotate;
  • a transducing device for converting electrical energy into acoustic energy and connected to the oscillator
  • the second driving mechanism is used to connect with the first end surface of the wafer and drive the wafer to rotate, the second driving mechanism is arranged opposite to the oscillator, so that the second end surface of the wafer faces the The oscillator is opposite to the running track of the transducer device;
  • the liquid delivery mechanism is provided with a liquid discharge port for discharging the cleaning liquid, and the liquid discharge port faces the oscillator;
  • control component connected to the transducer device and used to control the magnitude of the sound energy emitted by the transducer device
  • the control component controls the sound energy emitted by the energy conversion device to gradually decrease, and/or when the energy conversion device moves along the wafer
  • the control component controls the sound energy emitted by the transducer device to gradually increase.
  • the control component includes a first energy converter capable of converting electrical energy into acoustic energy and a second energy converter capable of converting acoustic energy into electrical energy;
  • the first energy converter includes an acoustic wave emitting part
  • the second energy converter includes an acoustic wave receiving part
  • the first energy converter is arranged on the base body
  • the second energy converter is arranged on the rotating seat and is electrically connected with the transducer device, the sound wave receiving part and the sound wave emitting part can be switched between a relative state and a staggered state;
  • the overlapping range of the sound wave emitting part and the sound wave receiving part gradually decreases, and/or when the transducer moves along the wafer
  • the center of the circle moves toward the outer peripheral side
  • the overlapping range of the sound wave emitting part and the sound wave receiving part gradually increases.
  • the base body is provided with a cavity structure into which the first end of the rotating base extends, and the cavity structure is used to accommodate a conductive medium;
  • the first energy converter is disposed in the cavity structure
  • the second energy converter is arranged at the first end of the rotating base.
  • the first energy converter includes a plurality of acoustic wave emitting parts distributed sequentially along the circumference of the rotation axis of the turntable
  • the second The energy converter includes a plurality of sound wave receiving parts sequentially distributed along the circumferential direction of the rotation axis of the rotating seat, the number of the second driving mechanism is multiple, the number of the sound wave emitting parts, the sound wave receiving parts
  • the number of parts and the number of the transducers are the same as the number of the second driving mechanism;
  • An interval space is provided between any two adjacent sound wave emitting parts
  • the sound wave receiving part is opposite to the space between the two sound-wave emitting parts;
  • the sound wave receiving part is opposite to the sound wave emitting part.
  • the second drive mechanism, the first energy converter, and the second energy converter are provided in multiples, and the energy conversion device and The number of the second energy converters is the same and connected in one-to-one correspondence, and the number of the second drive mechanism is the same as the number of the first energy converters;
  • the middle part of the sound wave emitting part is respectively connected to the two ends through inclined planes, and in the direction from the end part to the middle part, each inclined plane is inclined inward;
  • the acoustic wave receiving part corresponding to the transducing device when the transducing device operates to be opposite to the center of the wafer, the acoustic wave receiving part corresponding to the transducing device is opposite to the middle part of the acoustic wave emitting part, and when the transducing device operates When facing the outer peripheral side of the wafer, the sound wave receiving part corresponding to the transducer device is opposite to the end part of the sound wave emitting part.
  • the sound wave receiving part is arranged on the end surface of the first end of the turntable, and the sound wave emitting part is arranged inside the cavity structure bottom surface.
  • the sound wave receiving part is arranged on the outer peripheral surface of the first end of the turntable, and the sound wave emitting part is arranged inside the cavity structure Zhou Mian.
  • the energy conversion device includes a third energy converter, the third energy converter is electrically connected to the second energy converter, and the third energy converter is electrically connected to the second energy converter.
  • the energy converter is provided with an emitting surface for emitting sound waves;
  • the total area of the sound wave emitting portion is set to be 1/5-1/10 of the total area of the emitting surface.
  • a megasonic cleaning system for large-sized wafers provided by the present application, it also includes a cleaning tank, and the oscillator is arranged in a circular structure;
  • the cleaning tank is arranged as an annular tank, and the notch of the cleaning tank is opposite to the outer edge of the oscillator.
  • a megasonic cleaning system for large-sized wafers there are multiple second drive mechanisms, and the multiple second drive mechanisms are distributed sequentially along the axial direction of the rotation axis of the turntable.
  • the large-size wafer megasonic cleaning system provided by this application drives the rotating base to rotate through the first driving mechanism, so that the running track of the transducer device passes the surface to be cleaned of the wafer, and at the same time, the second driving mechanism drives the wafer to rotate with the first
  • the driving mechanism cooperates so that the energy-transforming device can scan the surface to be cleaned of the entire wafer. In this way, by scanning the wafer in a rotating manner, the size of the transducer device no longer needs to match the size of the wafer, thereby reducing the difficulty of manufacturing the piezoelectric ceramic sheet in the transducer device.
  • the rotating seat drives the energy conversion device to rotate, and at the same time, the second driving mechanism drives the wafers to rotate.
  • the control component controls the acoustic energy emitted by the transducer device to increase.
  • control component controls the sound energy emitted by the transducer device to decrease, so that the wafer The acoustic wave energy received by the surface to be cleaned is uniform, thereby improving the cleaning effect of the wafer, avoiding damage to the wafer due to excessive energy, and saving energy at the same time.
  • Fig. 1 is the structural representation of the large-scale wafer megasonic cleaning system in the prior art
  • Fig. 2 is the schematic diagram of the principle of the large-size wafer megasonic cleaning system provided by the present application
  • FIG. 3 is a schematic structural view of a large-size wafer megasonic cleaning system in an embodiment provided by the present application
  • FIG. 4 is a schematic structural view of the large-size wafer megasonic cleaning system in the first embodiment provided by the present application;
  • Fig. 5 is a schematic structural diagram of the first energy converter in the first embodiment provided by the present application.
  • Fig. 6 is a schematic structural diagram of the second energy converter in the first embodiment provided by the present application.
  • FIG. 7 is a schematic diagram of the operation of the large-size wafer megasonic cleaning system in the first embodiment provided by the present application.
  • FIG. 8 is a schematic structural diagram of a large-size wafer megasonic cleaning system in a second embodiment provided by the present application.
  • Fig. 9 is a schematic structural diagram of the first energy converter in the second embodiment provided by the present application.
  • FIG. 10 is a schematic diagram of the operation of the large-size wafer megasonic cleaning system in the second embodiment provided by the present application.
  • FIG. 11 is a schematic structural diagram of a megasonic cleaning system for large-sized wafers in a third embodiment provided by the present application.
  • Fig. 12 is a schematic structural diagram of the first energy converter in the third embodiment provided by the present application.
  • FIG. 13 is a schematic diagram of the operating principle of the large-size wafer megasonic cleaning system in the third embodiment provided by the present application.
  • Fig. 14 is a schematic structural diagram of the second energy converter in the second embodiment provided by the present application.
  • Fig. 15 is a schematic structural diagram of the second energy converter in the third embodiment provided by the present application.
  • the megasonic cleaning system for a large-sized wafer in an embodiment of the present application will be described below with reference to FIGS. 2-15 .
  • the large-size wafer megasonic cleaning system includes a base body 1, a rotating base 2, a first driving mechanism 4, an energy conversion device, a second driving mechanism 17, a liquid delivery mechanism 6 and a control assembly.
  • the base 1 can be configured as a shell structure.
  • the rotating base 2 is rotatably arranged on the base body 1 .
  • the base body 1 is provided with a bearing hole
  • the bearing hole is provided with a bearing
  • the rotating base 2 is set in the bearing, so as to be rotatably connected with the base body 1 through the bearing.
  • the oscillator 15 is connected with the rotating base and rotates with the rotating base.
  • the oscillator 15 includes, but is not limited to, connected to the rotating seat through screw connection.
  • oscillators can be quartz, sapphire, or alumina.
  • the first driving mechanism 4 is used for transmission connection with the rotating base 2 and driving the rotating base 2 to rotate.
  • the first drive mechanism 4 may comprise a motor.
  • the motor is installed on the base body 1, and the output shaft of the motor is sleeved with a driving gear, and the rotating base 2 is provided with a driven gear 3 meshing with the driving gear, and the motor drives the rotating base 2 to rotate through gear transmission.
  • the transducer device is used to convert electrical energy into sound energy, and the transducer device is connected with the oscillator 15 so as to rotate with the oscillator 15 .
  • the energy transducing device includes but is not limited to being connected to the oscillator 15 by bonding, so as to transmit the acoustic energy to the oscillator 15, and make the oscillator vibrate to generate ultrasonic waves or megasonic waves, thereby cleaning the wafer.
  • the second driving mechanism 17 is used to connect with the first end surface of the wafer and drive the wafer to rotate.
  • the second drive mechanism 17 is arranged opposite to the oscillator 15, so that the second end surface of the wafer, ie, the surface to be cleaned, faces the oscillator and is opposite to the running track of the transducer device.
  • the center of circle of the wafer 5 is opposite to the running track of the transducer device.
  • the second driving mechanism 17 may include a motor and a suction cup.
  • the suction cup is installed on the output shaft of the motor and is used to absorb the wafer 5 , and the motor drives the suction cup to drive the wafer 5 to rotate.
  • the liquid delivery mechanism 6 is provided with a liquid discharge port for discharging cleaning liquid.
  • the discharge port of the liquid delivery mechanism 6 faces the oscillator.
  • the cleaning liquid can transmit the acoustic energy emitted by the oscillator to the surface of the wafer, and on the other hand, it can wash away impurities dropped from the surface of the wafer 5 .
  • the liquid delivery mechanism 6 may include a liquid pump and pipelines.
  • a fluid pump draws cleaning fluid and drives it through the tubing to the oscillator face.
  • the control component is connected with the transducer device and is used to control the magnitude of the sound energy emitted by the transducer device.
  • the control component controls the sound energy emitted by the transducer to gradually decrease, and/or when the transducer moves along the center of the wafer toward the outer periphery, the control The component controls the sound energy emitted by the transducing device to gradually increase.
  • the large-size wafer megasonic cleaning system in the embodiment provided by the application drives the rotating base 2 to rotate through the first drive mechanism 4, so that the running track of the transducer device passes the surface to be cleaned of the wafer 5, and the second drive mechanism 17 Drive the wafer 5 to rotate and cooperate with the first driving mechanism 4, so that the energy transducing device can scan the entire surface of the wafer 5 to be cleaned.
  • the size of the transducer device no longer needs to match the size of the wafer 5 , thereby reducing the manufacturing difficulty of the piezoelectric ceramic sheet 19 in the transducer device.
  • the rotating seat 2 drives the energy conversion device to rotate, and at the same time, the second driving mechanism 17 drives the wafer 5 turn.
  • the control component controls the acoustic energy emitted by the transducer device to increase , when the transducing device runs to the center of the wafer 5, since the linear velocity of the center of the wafer 5 is relatively low, it does not need high sound energy for cleaning.
  • the control component controls the acoustic energy emitted by the transducing device to decrease, Therefore, the acoustic wave energy received by the surface to be cleaned of the wafer 5 is uniform, thereby improving the cleaning effect of the wafer 5, avoiding local damage of the wafer 5 due to excessive energy, and saving energy at the same time.
  • the shaded part in the figure represents the fan-shaped energy conversion device in the prior art
  • the megasonic cleaning system for large-sized wafers in the embodiment provided by the application controls the energy emitted by the energy conversion device through the control component , can achieve the same effect as the fan-shaped transducer device in the prior art, that is, the effect that the sound wave energy gradually weakens in the direction from the outer peripheral side of the wafer 5 to the center of the circle.
  • control assembly includes a first energy converter 7 capable of converting electrical energy into sound energy and a second energy converter 8 capable of converting sound energy into electrical energy.
  • the first energy converter 7 includes an acoustic wave emitting part
  • the second energy converter 8 includes an acoustic wave receiving part.
  • the first energy converter 7 is arranged on the base body 1, and the second energy converter 8 is arranged on the rotating base 2 and is electrically connected with the energy conversion device.
  • the sound wave receiving part and the sound wave emitting part can be switched between a relative state and a staggered state.
  • the overlapping range of the acoustic wave emitting part and the acoustic wave receiving part gradually decreases, and/or when the transducing device moves toward the outer peripheral side along the center of the wafer 5, The overlapping range of the sound wave emitting part and the sound wave receiving part increases gradually.
  • the second energy converter 8 can receive more energy and transmit it to the energy conversion device, so that The transducer device can generate stronger sound energy.
  • the overlapping range of the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter 8 decreases, the energy received by the second energy converter 8 decreases, thereby reducing the sound energy produced by the transducer device .
  • So set can control the size of the sound energy generated by the transducer device through the change of the overlapping area between the sound wave emitting part of the first energy converter 7 and the sound wave receiving part of the second energy converter, that is, realize the conversion through the mechanical and circuit structure.
  • the adjustment of the sound energy emitted by the energy device makes the structure more stable and reliable.
  • the second energy converter since there is no need for a connection line between the first energy converter 7 and the second energy converter 8 , the second energy converter will not be limited by the connection line when it rotates with the rotating base 2 .
  • the seat body 1 is provided with a cavity structure 9 into which the first end of the rotating seat 2 protrudes, and the cavity structure 9 is used to accommodate a conductive medium.
  • the first energy converter 7 is disposed in the cavity structure 9 .
  • the second energy converter 8 is disposed on the first end of the rotating base 2 .
  • Conductive media include, but are not limited to, water.
  • the first energy converter 7 can transmit energy with the second energy converter 8 through the conductive medium, which can reduce energy loss and improve energy transmission efficiency.
  • the cavity structure 9 is provided with a liquid inlet for the conduction medium to enter and a liquid outlet for the conduction medium to discharge.
  • the first energy converter 7 includes a plurality of sound wave emitting parts sequentially distributed along the circumferential direction of the rotation axis of the rotating seat 2.
  • the second energy converter 8 includes a plurality of sound wave receiving parts sequentially distributed along the circumferential direction of the rotation axis of the rotating base 2 .
  • the number of sound wave emitting parts, the number of sound wave receiving parts and the number of transducer devices are all the same as the number of the second driving mechanism.
  • An interval space is provided between any two adjacent sound wave emitting parts.
  • the acoustic wave receiver when the transducing device runs to the center of circle of wafer 5, the acoustic wave receiver is opposite to the space between the two acoustic wave emitters, and when the transducing device travels to the outer peripheral side of wafer 5 When facing each other, the sound wave receiving part is opposite to the sound wave emitting part.
  • the second energy converter includes a piezoelectric ceramic sheet 19 , a second electrode 11 and a circular electrode 20 .
  • a plurality of fan-shaped second electrodes 11 are provided on the first end surface of the piezoelectric ceramic sheet 19 , and a space is provided between any two adjacent second electrodes 11 .
  • a circular electrode 20 is provided on the second end surface of the piezoelectric ceramic sheet 19 .
  • the portion of the piezoelectric ceramic sheet 19 provided with the second electrode 11 constitutes the above-mentioned acoustic wave receiving portion.
  • the ends of the second electrodes 11 close to the outer peripheral side of the piezoelectric ceramic sheet 19 are connected to each other and form a wrapping, and the wrapping is folded over the second end surface of the piezoelectric ceramic sheet 19, so that the second electrode 11
  • the lead wires of the second electrode 11 and the circular electrode 20 are all arranged on the second end surface, thereby reducing manufacturing difficulty.
  • the piezoelectric ceramic sheet 19 has a piezoelectric effect. When receiving sound energy, a current will be generated between the electrodes on the two end faces of the piezoelectric ceramic sheet 19, or when a changing current is passed to the electrodes on the two end faces, the piezoelectric ceramic sheet 19 will Will vibrate.
  • the piezoelectric ceramic sheets described in this article are all based on this principle to perform acoustic-electric conversion, and other parts will not be repeated.
  • the first energy converter 7 has the same structure as the second energy converter 8 , and the first energy converter 7 includes a piezoelectric ceramic sheet 19 , a first electrode 10 and a circular electrode 20 .
  • a plurality of fan-shaped first electrodes 10 are arranged on the first end surface of the piezoelectric ceramic sheet 19 , and there is an interval between any two adjacent first electrodes 10 .
  • a circular electrode 20 is provided on the second end surface of the piezoelectric ceramic sheet 19 .
  • the portion of the piezoelectric ceramic sheet 19 provided with the first electrode 10 constitutes the above-mentioned acoustic wave emitting portion.
  • the first ends of the first electrodes 10 close to the outer peripheral side of the piezoelectric ceramic sheet 19 are connected to each other to form a wrapping, and folded over the second end surface of the piezoelectric ceramic sheet 19 .
  • the first end face of the first energy converter 7 is opposite to the first end face of the second energy converter 8.
  • Acoustic power supply for example, the output end of the megasonic power supply is connected with the first electrode 10 and the circular electrode 20 of the first energy converter 7 respectively, so that the megasonic power supply can deliver the electric energy of the megasonic frequency to the first energy converter 7 .
  • the first energy converter 7 converts electrical energy into sound energy and sends it out from the sound wave emitting part, and transmits it to the second energy converter 8 through a conductive medium, and the second energy converter 8 receives through the sound wave receiving part, and converts the sound energy into electric energy
  • the megasonic emitter transmits the megasonic energy to the surface of the wafer 5 for cleaning through the wire 12 .
  • the second energy converter 8 when the first electrode 10 of the first energy converter 7 is opposite to the second electrode 11 of the second energy converter 8, the second energy converter 8 can receive more acoustic energy, and the second energy converter The current generated by the device 8 is larger, so that the energy conversion device can generate higher energy output.
  • the second electrode 11 of the second energy conversion is opposite to the space between the two first electrodes 10, the second energy converter 8 receives less acoustic energy from the first energy converter 7, and the second energy conversion The current generated by the device 8 is relatively small, so that the energy conversion device produces a relatively low energy output.
  • the number of the second driving mechanism is multiple, so the number of wafers 5 can be set multiple, so that the cleaning efficiency of the large-size wafer cleaning system can be improved.
  • the number of transducers is the same as the number of wafers 5 , and each transducer is connected in parallel between the second electrode 11 of the second energy converter 8 and the circular electrode 20 of the second energy converter 8 through wires 12 .
  • the diameter of the second energy converter 8 is larger than that of the first energy converter 7 , so that the sound energy generated by the first energy converter 7 can be completely absorbed by the second energy converter 8 .
  • the arrangement form of the first energy converter 7 and the second energy converter 8 is not limited to the above-mentioned manner.
  • first energy converters 7 and multiple second energy converters 8 there are multiple first energy converters 7 and multiple second energy converters 8 .
  • the energy conversion device and the second energy converter 8 have the same number and are connected in a one-to-one correspondence.
  • the number of the second drive mechanisms is the same as the number of the first energy converters.
  • the plurality of second driving mechanisms can simultaneously drive a plurality of wafers for cleaning, thereby improving the cleaning efficiency of the wafers.
  • a plurality of first energy converters 7 and a plurality of second energy converters 8 are sequentially arranged along the circumferential direction of the rotation axis of the rotating seat 2 .
  • the middle part of the sound wave emitting part is connected to its two ends through inclined planes 14, and each inclined plane 14 is inclined inward along the direction from the end part to the middle part.
  • the first end of the sound wave emitting part is connected to the middle part through two opposite inclined surfaces 14, and the second end is also connected to the middle part through two opposite inclined surfaces 14. connect.
  • the acoustic wave receiving part corresponding to the transducing device is opposite to the middle part of the acoustic wave emitting part, and the transducing device is running to the center of the acoustic wave emitting part.
  • the sound wave receiving part corresponding to the transducer device is opposite to the end of the sound wave emitting part.
  • the second energy converter 8 can receive more acoustic energy, and the second energy converter 8 generates The current is larger, so that the energy conversion device produces a higher energy output.
  • the second energy converter 8 receives less acoustic energy from the first energy converter 7, and the second energy converter 8 generates a smaller current, so that The transducing device produces a lower energy output.
  • the sound wave receiving part is arranged on the end surface of the first end of the rotating seat 2
  • the sound wave emitting part is arranged on the bottom surface inside the cavity structure 9 .
  • the first energy converter 7 includes a first electrode 10 , a piezoelectric ceramic sheet 19 and a rectangular electrode.
  • the first electrode 10 is arranged on the first end surface of the piezoelectric ceramic sheet 19, the rectangular electrode is arranged on the second end surface of the piezoelectric ceramic sheet 19, and the end of the first electrode 10 is folded over the second end surface of the piezoelectric ceramic sheet 19 .
  • the portion of the first end surface of the piezoelectric ceramic sheet 19 where the first electrode 10 is disposed constitutes the above-mentioned acoustic wave emitting portion.
  • the second energy converter 8 includes a second electrode 11 and a piezoelectric ceramic sheet 19 . Both end surfaces of the piezoelectric ceramic sheet 19 are provided with second electrodes 11 , and the second electrodes 11 may be elongated electrodes. The portion of any end surface of the second energy converter 8 provided with the second electrode can constitute the above-mentioned acoustic wave receiving portion. The length of the second electrode 11 is greater than the width of the first electrode 10 .
  • the second electrode 11 is not limited to be disposed on the end face of the first end of the rotating base 2 .
  • the sound wave receiving part is disposed on the outer peripheral surface of the first end of the rotating seat 2
  • the sound wave emitting part is disposed on the inner peripheral surface of the cavity structure 9 .
  • the first energy converter 7 includes a first electrode 10 , a piezoelectric ceramic sheet 19 and an arc-shaped electrode 22 .
  • the piezoelectric ceramic sheet 19 is arranged in an arc-shaped structure, the first electrode 10 is arranged on the inner concave surface of the piezoelectric ceramic sheet 19 and faces the cavity structure 9, and the arc-shaped electrode 22 is arranged on the outer convex surface of the piezoelectric ceramic sheet 19.
  • An end of an electrode 10 is folded on the convex surface of the piezoelectric ceramic sheet 19 .
  • the part of the piezoelectric ceramic sheet provided with the first electrode 10 constitutes the above-mentioned acoustic wave emitting part.
  • the second energy converter 8 includes a second electrode 11 and a piezoelectric ceramic sheet 19, the two end faces of the piezoelectric ceramic sheet 19 are provided with a second electrode 11, and the length of the second electrode 11 is longer than that of the first electrode 11.
  • the width of an electrode 10 The portion of the convex surface of the piezoelectric ceramic sheet provided with the second electrode can constitute the above-mentioned sound wave receiving portion.
  • the energy transducing device includes a third energy converter 18 .
  • the third energy converter 18 can be connected to the oscillator 15 by bonding.
  • the third energy converter 18 is electrically connected to the second energy converter 8 .
  • the third energy converter is provided with an emitting surface for emitting sound waves.
  • the total area of the sound wave emitting part is set to be 1/5-1/10 of the total area of the emitting surface.
  • the megasonic power density when cleaning the surface of the wafer 5 must not be too large, generally limited to 2-3W/cm 2 , within this range, effective cleaning can be guaranteed without Damage wafer 5.
  • the normal acoustic power density of the piezoelectric ceramic sheet itself can be applied to 10-20W/cm 2 , but exceeding 20W/cm 2 will also cause damage to the piezoelectric ceramic. Therefore, if the power density of the third energy converter 18 in this application is 2W/cm 2 , the power density of the first energy converter 7 can be loaded to 5-10 times that of the third energy converter.
  • the third energy converter 18 may include a piezoelectric ceramic sheet and electrodes disposed on both end surfaces of the piezoelectric ceramic sheet.
  • the part where the electrode is provided on the end surface of the piezoelectric ceramic sheet connected with the oscillator constitutes the emitting surface.
  • the electrodes on the two end faces of the third energy converter 18 are electrically connected to the electrodes on the two end faces of the second energy converter 8, and the second energy converter 8 transmits current to the third energy converter, thereby using the current to drive the piezoelectric ceramics Sheet 19 vibrates.
  • the piezoelectric ceramic sheet 19 drives the oscillator to vibrate, and the oscillator outputs megasonic waves or ultrasonic waves to clean the surface of the wafer 5 .
  • the first electrode 10 , the second electrode 11 , the circular electrode 20 , the square electrode 21 and the arc-shaped electrode 22 can all be made of nickel, pure titanium or titanium alloy to prevent water and corrosion.
  • the megasonic cleaning system for large-sized wafers further includes a cleaning tank 16, and the oscillator 15 is arranged in a circular structure.
  • the cleaning tank 16 is configured as an annular tank, and the notch of the cleaning tank 16 is opposite to the outer edge of the oscillator 15 .
  • the water sprayed by the liquid delivery mechanism 6 flows into the annular groove through the gap between the wafer 5 and the oscillator 15 to be collected.
  • the oscillator is made of quartz, sapphire or ruby.
  • the megasonic cleaning system for large-sized wafers in the embodiments provided in this application can clean multiple wafers 5 at a time, thereby improving the cleaning efficiency of wafers 5 .

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention se rapporte au domaine technique du nettoyage de semi-conducteurs, et concerne un système de nettoyage mégasonique pour une tranche de grande taille, comprenant : un corps de siège ; un siège rotatif, qui est disposé de manière rotative sur le corps de siège ; un oscillateur, qui est relié au siège rotatif ; un premier mécanisme d'entraînement, qui est utilisé pour entraîner le siège rotatif en rotation ; un appareil transducteur, qui est utilisé pour effectuer une conversion acousto-électrique et qui est connecté à l'oscillateur ; un second mécanisme d'entraînement, qui est utilisé pour être relié à une première face d'extrémité de la tranche et entraîner la tranche en rotation, le second mécanisme d'entraînement étant disposé à l'opposé de l'oscillateur de telle sorte qu'une seconde face d'extrémité de la tranche fait face à l'oscillateur et est opposée à une trajectoire de fonctionnement de l'appareil transducteur ; un mécanisme de transport de liquide, qui est pourvu d'une sortie de liquide qui fait face à l'oscillateur ; et un ensemble de commande, qui est relié à l'appareil transducteur et est utilisé pour commander l'amplitude de l'énergie sonore émise par l'appareil transducteur de façon à soumettre la tranche à une énergie d'onde sonore uniforme. La tranche est balayée dans un mode de rotation et de déplacement, la taille de l'appareil transducteur n'a pas besoin de correspondre à celle de la tranche, et la difficulté de fabrication d'une pièce en céramique piézoélectrique peut être réduite.
PCT/CN2022/134700 2022-01-11 2022-11-28 Système de nettoyage mégasonique pour tranche de grande taille WO2023134313A1 (fr)

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