WO2023127851A1 - Matériau de barre déformé en alliage de cuivre, composant pour appareil électronique ou électrique, borne, barre omnibus, grille de connexion, et substrat de dissipation de chaleur - Google Patents

Matériau de barre déformé en alliage de cuivre, composant pour appareil électronique ou électrique, borne, barre omnibus, grille de connexion, et substrat de dissipation de chaleur Download PDF

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WO2023127851A1
WO2023127851A1 PCT/JP2022/048113 JP2022048113W WO2023127851A1 WO 2023127851 A1 WO2023127851 A1 WO 2023127851A1 JP 2022048113 W JP2022048113 W JP 2022048113W WO 2023127851 A1 WO2023127851 A1 WO 2023127851A1
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copper alloy
content
mass
profile strip
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PCT/JP2022/048113
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Japanese (ja)
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裕隆 松永
健二 森川
真一 船木
航世 福岡
優樹 伊藤
一誠 牧
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三菱マテリアル株式会社
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

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  • the present invention relates to a copper alloy profile strip suitable for electronic and electrical device parts such as terminals, bus bars, lead frames, and heat dissipation substrates, and electronic and electrical device parts, terminals, bus bars and leads made of this copper alloy profile strip. It relates to the frame and the heat dissipation board.
  • Patent Document 1 discloses a rolled copper sheet containing Mg in the range of 0.005 mass% or more and less than 0.1 mass%.
  • the copper rolled sheet described in Patent Document 1 contains Mg in the range of 0.005 mass% or more and less than 0.1 mass%, and the balance is Cu and inevitable impurities.
  • the heat resistance of these materials is improved by adding a solute element.
  • the structure tends to be different between the thick and thin portions, and the thick and thin portions tend to have different properties such as strength and heat resistance.
  • the present invention has been made in view of the above-mentioned circumstances, and it is possible to stably use the thick part and the thin part in a high temperature environment without causing a difference in properties such as strength and heat resistance. It is an object of the present invention to provide a copper alloy profile strip, and electronic/electronic equipment components, terminals, bus bars, lead frames, and heat dissipation substrates made of this copper alloy profile strip.
  • a copper alloy profile strip is a copper alloy profile strip having a thick portion and a thin portion having different thicknesses in a cross section perpendicular to the longitudinal direction, and containing Mg.
  • the content is in the range of more than 10 massppm and less than 1.2 mass%
  • the content of P is in the range of 0 massppm to 200 massppm
  • the balance is Cu and unavoidable impurities.
  • the heat resistant temperature T1 of the thick portion is 260° C. or higher
  • the heat resistant temperature T2 of the thin portion is 240° C. or higher
  • 0.9 ⁇ T1/T2 ⁇ 1.25 the rolled surface, that is, the ND surface, is formed by the EBSD method.
  • the measurement area of 10000 ⁇ m 2 or more in (Normal direction) is analyzed for each crystal grain, except for the measurement points where the CI value is 0.1 or less at a measurement interval step of 0.25 ⁇ m, and the adjacent The grain boundary between the measurement points where the orientation difference between the measurement points is 15 ° or more, the average grain size A is obtained by Area Fraction, and the measurement is performed in steps with a measurement interval that is 1/10 or less of the average grain size A.
  • the measurement area is 10000 ⁇ m 2 or more in multiple fields of view, and the CI value analyzed by the data analysis software OIM is 0.1 or less.
  • L LB is the length of the low-angle grain boundary and subgrain boundary between the measurement points where the orientation difference between the adjacent measurement points is 2° or more and 15° or less, and the orientation difference between the adjacent measurement points is 15°.
  • LHB the length of the high-angle grain boundary between the measurement points exceeding °
  • the low-angle grain boundary ratio B LLB /( LLB + LHB )
  • the low-angle grain boundary ratio B1 in the thick portion is 80% or less
  • the low angle grain boundary ratio B2 in the thin portion is 80% or less
  • 0.8 ⁇ B1/B2 ⁇ 1.2 and within 10° with respect to the Goss orientation ⁇ 011 ⁇ ⁇ 100>
  • the area ratio of crystals having a crystal orientation of is 1% or more in each of the thick portion and the thin portion.
  • the Mg content is in the range of more than 10 massppm and less than 1.2 mass%, and the P content is in the range of 0 massppm to 200 massppm.
  • the heat resistance can be sufficiently improved.
  • the electrical conductivity is 48% IACS or higher, heat generation during energization can be suppressed, making it suitable as a material for parts for electronic and electrical equipment such as terminals, bus bars, lead frames, and heat dissipation substrates.
  • the heat resistant temperature T1 of the thick portion is 260° C. or higher
  • the heat resistant temperature T2 of the thin portion is 240° C. or higher
  • the difference in heat resistance between the thick portion and the thin portion is small, and the heat resistance of the entire copper alloy profile strip is stably improved. Since the crystal structure is controlled so that the low-angle grain boundary ratio and the area ratio of Goss-oriented crystals in the thick portion and the thin portion are within the above-described ranges, recovery and recrystallization by movement of dislocations are achieved. is unlikely to occur, and the heat resistance can be sufficiently improved in the thick portion and the thin portion.
  • the S content is 10 mass ppm or less
  • the Se content is 5 mass ppm or less
  • the Te content is 5 mass ppm or less
  • the Sb content is 5 mass ppm.
  • the content of Bi is 5 mass ppm or less
  • the content of As is 5 mass ppm or less
  • the total content of S, Se, Te, Sb, Bi, and As is 24 mass ppm or less.
  • the Ag content is in the range of 5 ppm by mass or more and 20 ppm by mass or less. In this case, since Ag is contained in the above range, Ag segregates in the vicinity of grain boundaries, grain boundary diffusion is suppressed, and heat resistance can be further improved.
  • the Vickers hardness H1 of the thick portion is 70 Hv or more
  • the Vickers hardness H2 of the thin portion is 75 Hv or more
  • 0.7 ⁇ H1/H2 ⁇ 1.2 it is preferable that In this case, the Vickers hardness H1 of the thick portion is 70 Hv or more
  • the Vickers hardness H2 of the thin portion is 75 Hv or more
  • the Vickers hardness ratio H1/H2 is 0.7 ⁇ H1/H2 ⁇ 1. 2
  • the strength is excellent, and the difference in strength between the thick portion 11 and the thin portion 12 is small, so that it can be used stably.
  • the copper alloy profile strip of the present invention preferably has a metal plating layer on its surface.
  • it since it has a metal plating layer on the surface, it is particularly suitable as a material for parts for electronic and electrical equipment such as terminals, bus bars, lead frames, and heat dissipation substrates.
  • a component for an electronic/electrical device is characterized by being made of the copper alloy profile strip described above.
  • the parts for electronic/electrical equipment in the present invention include terminals, bus bars, lead frames, heat-dissipating substrates, and the like. Since the component for electronic/electrical equipment having this configuration is manufactured using the above-described copper alloy profile strip, it can exhibit excellent properties even in a high-temperature environment.
  • a terminal of the present invention is characterized by being made of the copper alloy profile strip described above. Since the terminal having this configuration is manufactured using the above-described copper alloy profile strip, it can exhibit excellent characteristics even in a high-temperature environment.
  • a bus bar according to the present invention is characterized by being made of the copper alloy profile strip described above. Since the bus bar having this configuration is manufactured using the above-described copper alloy profile strip, it can exhibit excellent characteristics even in a high-temperature environment.
  • a lead frame according to the present invention is characterized by being made of the above copper alloy profile strip. Since the lead frame having this configuration is manufactured using the above-described copper alloy profile strip, it can exhibit excellent characteristics even in a high-temperature environment.
  • a heat dissipating substrate according to the present invention is characterized by being made of the copper alloy profile strip described above. Since the heat dissipating substrate having this configuration is manufactured using the above-described copper alloy profile strip, it can exhibit excellent characteristics even in a high-temperature environment.
  • the present invention there is little difference in properties such as strength and heat resistance between the thick portion and the thin portion, and a copper alloy profile strip that can be stably used in a high-temperature environment, and the copper alloy. It becomes possible to provide electronic and electronic device parts, terminals, bus bars, lead frames, and heat dissipation substrates made of dual-gauge strips.
  • FIG. 1 is a cross-sectional explanatory view of a copper alloy dual-gauge strip according to the present embodiment
  • FIG. 1 is a flowchart of a method for manufacturing a copper alloy dual-gauge strip according to the present embodiment
  • FIG. 1 is a flowchart of a method for manufacturing a copper alloy dual-gauge strip according to the present embodiment
  • a copper alloy profile strip according to one embodiment of the present invention will be described below with reference to the accompanying drawings.
  • the copper alloy profile strip of this embodiment is optimally used as a material for parts for electronic and electrical equipment such as terminals, bus bars, lead frames, and heat dissipation substrates.
  • a copper alloy profile strip 10 of this embodiment has a thick portion 11 and a thin portion 12 having different thicknesses in a cross section orthogonal to the longitudinal direction. Also, the ratio t1/t2 between the thickness t1 of the thick portion 11 and the thickness t2 of the thin portion 12 is preferably 8 or less, preferably 6 or less.
  • the Mg content is in the range of more than 10 mass ppm and less than 1.2 mass%
  • the P content is in the range of 0 mass ppm to 200 mass ppm
  • the balance is Cu and unavoidable impurities. It has a composition
  • the S content is 10 mass ppm or less
  • the Se content is 5 mass ppm or less
  • the Te content is 5 mass ppm or less
  • the Sb content is 5 mass ppm.
  • the content of Bi is 5 mass ppm or less
  • the content of As is 5 mass ppm or less
  • the total content of S, Se, Te, Sb, Bi, and As is 24 mass ppm or less.
  • the Ag content may be in the range of 5 massppm or more and 20 massppm or less.
  • the electrical conductivity is set to 48%IACS or more.
  • the heat resistant temperature T1 of the thick portion 11 is 260° C. or higher
  • the heat resistant temperature T2 of the thin portion 12 is 240° C. or higher
  • a measured area of 10000 ⁇ m 2 or more on the rolled surface, that is, the ND surface (Normal direction) is measured by the EBSD method, and the CI value is measured at a step of 0.25 ⁇ m measurement interval. Except for the measurement points where is 0.1 or less, the orientation difference of each crystal grain is analyzed. Obtain the average grain size A, measure at steps with a measurement interval that is 1/10 or less of the average grain size A, and measure 10000 ⁇ m 2 or more in multiple fields so that the total number of crystal grains is 1000 or more.
  • the area is analyzed except for the measurement points where the CI value analyzed by the data analysis software OIM is 0.1 or less, and the orientation difference between adjacent measurement points is 2 ° or more and 15 ° or less.
  • L LB is the length of the low-angle grain boundary and the subgrain boundary
  • L HB is the length of the high-angle grain boundary between measurement points where the orientation difference between adjacent measurement points exceeds 15°
  • L HB is the length of the low-angle grain boundary.
  • the low-angle grain boundary ratio B2 in the thin portion 12 is 80% or less
  • 0.5% 8 ⁇ B1/B2 ⁇ 1.2.
  • the area ratio of crystals having a crystal orientation within 10° with respect to the Goss orientation ⁇ 011 ⁇ ⁇ 100> is 1% or more.
  • the Vickers hardness H1 of the thick portion 11 is 70 Hv or more
  • the Vickers hardness H2 of the thin portion 12 is 75 Hv or more
  • 0.7 ⁇ H1/H2 ⁇ 1.2 is preferred.
  • Mg is an element that has the function and effect of improving the strength and heat-resistant temperature resistance without significantly lowering the electrical conductivity by forming a solid solution in the matrix of copper.
  • the content of Mg is 10 ppm by mass or less, there is a possibility that the action and effect cannot be sufficiently exhibited.
  • the content of Mg is 1.2 mass % or more, the electrical conductivity becomes low, and there is a possibility that it cannot be used stably as a material for electronic/electrical device parts. From the above, in the present embodiment, the content of Mg is set within a range of more than 10 mass ppm and less than 1.2 mass %.
  • the lower limit of the Mg content is preferably 20 mass ppm or more, more preferably 30 mass ppm or more, and more preferably 40 mass ppm or more.
  • the upper limit of the Mg content is preferably 1.0 mass% or less, more preferably 0.8 mass% or less, and 0.6 mass% or less. It is more preferable to set the content to 0.4 mass% or less.
  • (P) P is an element that has an effect of improving castability, and may be added to improve productivity. On the other hand, when it is added excessively, it reacts with Mg to form a compound, which may reduce the effect of Mg solid solution.
  • the P content is set within the range of 0 mass ppm or more and 200 mass ppm or less.
  • the upper limit of the P content is preferably 160 mass ppm or less, more preferably 120 mass ppm or less, and more preferably 80 mass ppm or less. , 60 ppm by mass or less.
  • S, Se, Te, Sb, Bi, As Elements such as S, Se, Te, Sb, Bi, As described above are elements that are generally likely to be mixed into copper alloys. These elements are likely to react with Mg to form a compound, and may reduce the solid-solution effect of Mg added in a small amount. Therefore, the content of these elements must be strictly controlled. Therefore, in the present embodiment, the S content is 10 mass ppm or less, the Se content is 5 mass ppm or less, the Te content is 5 mass ppm or less, the Sb content is 5 mass ppm or less, the Bi content is 5 mass ppm or less, and the As content is 5 mass ppm or less. It is preferable to limit the content to 5 mass ppm or less. Furthermore, it is preferable to limit the total content of S, Se, Te, Sb, Bi and As to 24 ppm by mass or less.
  • the S content is more preferably 9 ppm by mass or less, and even more preferably 8 ppm by mass or less.
  • the Se content is more preferably 4 ppm by mass or less, and even more preferably 2 ppm by mass or less.
  • the Te content is more preferably 4 ppm by mass or less, and even more preferably 2 ppm by mass or less.
  • the Sb content is more preferably 4 ppm by mass or less, and even more preferably 2 ppm by mass or less.
  • the Bi content is more preferably 4 ppm by mass or less, and even more preferably 2 ppm by mass or less.
  • the As content is more preferably 4 ppm by mass or less, and even more preferably 2 ppm by mass or less.
  • the total content of S, Se, Te, Sb, Bi and As is more preferably 20 ppm by mass or less, and even more preferably 16 ppm by mass or less.
  • the Ag hardly dissolves in the parent phase of Cu in the normal operating temperature range of 250° C. or less for electronic and electrical equipment. Therefore, a trace amount of Ag added to copper segregates in the vicinity of grain boundaries. As a result, movement of atoms at grain boundaries is prevented, grain boundary diffusion is suppressed, and heat resistance is improved.
  • the content of Ag is 5 ppm by mass or more, it is possible to sufficiently exhibit its effects.
  • the Ag content is 20 ppm by mass or less, the electrical conductivity can be ensured and an increase in manufacturing cost can be suppressed. From the above, in the present embodiment, the Ag content is set within the range of 5 ppm by mass or more and 20 ppm by mass or less.
  • the lower limit of the Ag content is preferably 6 mass ppm or more, more preferably 7 mass ppm or more, and even more preferably 8 mass ppm or more.
  • the upper limit of the Ag content is preferably 18 mass ppm or less, more preferably 16 mass ppm or less, and further preferably 14 mass ppm or less. preferable.
  • the content of Ag may be less than 5 mass%.
  • unavoidable impurities include Al, B, Ba, Be, Ca, Cd, Cr, Sc, rare earth elements, V, Nb, Ta, Mo, Ni, W, Mn, Re, Ru, Sr, Ti, Os, Co, Rh, Ir, Pb, Pd, Pt, Au, Zn, Zr, Hf, Hg, Ga, In, Ge, Y, Tl, N, Si, Sn, Li and the like. These unavoidable impurities may be contained as long as they do not affect the properties.
  • the total amount is preferably 0.1 mass% or less, more preferably 0.05 mass% or less, and 0.03 mass% or less. is more preferably 0.01 mass % or less.
  • the upper limit of the content of each of these inevitable impurities is preferably 10 mass ppm or less, more preferably 5 mass ppm or less, and even more preferably 2 mass ppm or less.
  • the low-angle grain boundary ratio B1 of the thick portion 11 is set to 80% or less
  • the low-angle grain boundary ratio B2 of the thin portion 12 is set to 80% or less
  • the ratio B1/B2 between the low-angle grain boundary ratio B1 of the thick portion 11 and the low-angle grain boundary ratio B2 of the thin portion 12 is set to 0.8 ⁇ B1/B2 ⁇ 1.2.
  • the low-angle grain boundary ratio B1 of the thick portion 11 is more preferably 76% or less, and even more preferably 72% or less. Further, the low-angle grain boundary ratio B1 of the thin portion 12 is more preferably 76% or less, and even more preferably 72% or less. Furthermore, the ratio B1/B2 of the low-angle grain boundary ratio is preferably within the range of 0.85 ⁇ T1/T2 ⁇ 1.15, and is within the range of 0.90 ⁇ T1/T2 ⁇ 1.10. is more preferable.
  • Crystals having a Goss orientation of ⁇ 011 ⁇ 100> are relatively resistant to accumulation of dislocations, so it is possible to suppress the diffusion of atoms caused by the movement of dislocations in a high-temperature environment and the recovery caused thereby, thereby improving the heat resistance. .
  • the thick portion 11 and the thin portion 12 are used in the same temperature environment, it is required that there is no large difference in heat resistance between the thick portion 11 and the thin portion 12 . Note that the above-mentioned Goss orientation ⁇ 011 ⁇ 100> does not occur in copper materials by general rolling or heat treatment, and can be formed by deformation processing followed by processing and heat treatment.
  • the area ratio of crystals having a crystal orientation within 10° with respect to the Goss orientation ⁇ 011 ⁇ 100> is set to be 1% or more in each of the thick portion 11 and the thin portion 12. .
  • the area ratio of crystals having a crystal orientation within 10° with respect to the Goss orientation ⁇ 011 ⁇ 100> in the thick portion 11 and the thin portion 12 is preferably 1.4% or more, and 1.8%. It is more preferable to make it 2.2% or more, and more preferably 2.2% or more.
  • the electrical conductivity is set to 48%IACS or more.
  • the electrical conductivity is preferably 53%IACS or higher, more preferably 58%IACS or higher, even more preferably 63%IACS or higher, and even more preferably 75%IACS or higher.
  • the conductivity may be 102.5% IACS or less, 102% IACS or less, or 101.5% IACS or less.
  • the heat resistant temperature T1 of the thick portion 11 is 260° C. or higher and the heat resistant temperature T2 of the thin portion 12 is 240° C. or higher.
  • the heat resistant temperature T1 of the thick portion 11 and the heat resistant temperature T2 of the thin portion 12 are preferably close to each other, and the ratio T1/T2 between the heat resistant temperature T1 of the thick portion 11 and the heat resistant temperature T2 of the thin portion 12 is 0. .9 ⁇ T1/T2 ⁇ 1.25.
  • the heat resistant temperature T1 of the thick portion 11 is more preferably 280° C. or higher, even more preferably 300° C. or higher, and even more preferably 320° C. or higher.
  • the heat resistance temperature T2 of the thin portion 12 is more preferably 260° C. or higher, even more preferably 280° C. or higher, and even more preferably 300° C. or higher.
  • the heat resistant temperature ratio T1/T2 is more preferably within the range of 0.92 ⁇ T1/T2 ⁇ 1.20.
  • the Vickers hardness H1 of the thick portion 11 is 70 Hv or more and the Vickers hardness H2 of the thin portion 12 is 75 Hv or more, the strength is ensured, Especially suitable as a material for electrical and electronic parts. Also, if the difference in hardness between the thick part 11 and the thin part 12 is large, there is a possibility that the material will be distorted during press working when manufacturing parts for electronic and electrical equipment, especially terminals, bus bars, lead frames, and heat dissipation boards. There is therefore, it is preferable that the hardness H1 of the thick portion 11 and the hardness H2 of the thin portion 12 are close to each other. .7 ⁇ H1/H2 ⁇ 1.2.
  • the Vickers hardness H1 of the thick portion 11 is more preferably 72 Hv or higher, more preferably 74 Hv or higher.
  • the Vickers hardness H2 of the thin portion 12 is more preferably 77 Hv or higher, more preferably 79 Hv or higher.
  • the Vickers hardness ratio H1/H2 is more preferably in the range of 0.8 ⁇ H1/H2 ⁇ 1.1.
  • the above elements are added to the molten copper obtained by melting the copper raw material to adjust the composition, thereby producing the molten copper alloy.
  • various elements simple elements, master alloys, or the like can be used.
  • a raw material containing the above elements may be melted together with the copper raw material. Recycled materials and scrap materials of the present alloy may also be used.
  • the copper raw material is preferably so-called 4NCu with a purity of 99.99 mass% or higher, or so-called 5NCu with a purity of 99.999 mass% or higher.
  • atmosphere melting is performed in an inert gas atmosphere (for example, Ar gas) with a low vapor pressure of H 2 O, and the holding time during melting is minimized. It is preferable to limit Then, an ingot is produced by injecting the molten copper alloy with the adjusted composition into the mold.
  • an inert gas atmosphere for example, Ar gas
  • the obtained ingot is subjected to heat treatment for homogenization and solutionization.
  • an intermetallic compound or the like containing Cu and Mg as main components may be present as the Mg is concentrated by segregation during the solidification process. Therefore, in order to eliminate or reduce these segregations and intermetallic compounds, etc., heat treatment is performed to heat the ingot to 300 ° C. or higher and 1080 ° C. or lower, so that Mg is uniformly diffused in the ingot. , and Mg are dissolved in the matrix.
  • the homogenization/solution treatment step S02 is preferably performed in a non-oxidizing or reducing atmosphere.
  • the heating temperature is set in the range of 300° C. or higher and 1080° C. or lower.
  • hot working may be performed after the homogenization/solution treatment step S02 described above in order to improve the efficiency of rough rolling and homogenize the structure, which will be described later.
  • the working method is not particularly limited, and for example, rolling, drawing, extrusion, groove rolling, forging, pressing, etc. can be employed.
  • the hot working temperature is preferably in the range of 300° C. or higher and 1080° C. or lower.
  • Rough processing step S03 Rough processing is performed in order to process into a predetermined shape.
  • the temperature conditions in this rough processing step S03 are not particularly limited, but in order to suppress recrystallization or to improve dimensional accuracy, cold or warm rolling is performed within the range of -200 ° C. to 200 ° C. It is preferable to set it as, and especially normal temperature is preferable.
  • the processing rate is preferably 20% or more, more preferably 30% or more.
  • the processing method is not particularly limited, and for example, rolling, drawing, extrusion, groove rolling, forging, pressing, etc. can be employed. Note that the rough processing step S03 and the intermediate heat treatment step S04, which will be described later, may be repeated.
  • Step S04 After the rough working step S03, a heat treatment is performed to soften for improving workability or to obtain a recrystallized structure. At this time, a short-time heat treatment in a continuous annealing furnace is preferable, and when Ag is added, localization of Ag segregation to grain boundaries can be prevented. Although the conditions for this heat treatment are not particularly limited, the heat treatment is generally carried out in the range of 200°C to 1000°C.
  • the mechanical surface treatment is a treatment that applies compressive stress to the vicinity of the surface, and when combined with the above-mentioned pre-heat treatment step S07 described later, the Goss orientation ⁇ 011 ⁇ 100> is increased, and heat resistance can be improved.
  • Mechanical surface treatments include shot peening, blasting, lapping, polishing, buffing, grinder polishing, sandpaper polishing, tension leveler treatment, light rolling with low rolling reduction per pass (rolling reduction per pass 1% or more and 10% or less and repeated three times or more), various commonly used methods can be used.
  • the material after the mechanical surface treatment step S05 is cooled by a flat die having an uneven surface and rolling rolls that reciprocate along the forming surface facing the forming surface of the die.
  • a rough and deformed strip in which a rough and thick portion and a rough and thin portion are arranged in the width direction is obtained by deforming rolling.
  • the Goss orientation is likely to be formed in the pre-upper heat treatment step S07 by setting the area reduction rate of the working within the range of 5% or more and 90% or less.
  • the area reduction rate of processing is more preferably in the range of 10% or more and 85% or less, and more preferably in the range of 15% or more and 80% or less.
  • Vickers hardness ratio H1/H2 in the thick portion 11 and the thin portion 12 can be 0.7 ⁇ H1 /H2 ⁇ 1.2.
  • the ratio of the thickness of the rough and thick portion to the thickness of the rough and thin portion is 5 or less.
  • the processing rate is preferably 5% or more, more preferably 8% or more.
  • the working rate is too high, the low-angle grain boundary ratios B1 and B2 will increase, and the area ratio of the Goss orientation, which is the recrystallized structure, will also decrease. More preferably:
  • Low temperature annealing step S09 After the finishing step S08, low-temperature annealing is performed as necessary.
  • This low-temperature annealing step S09 has the effect of reducing the proportion of low-angle grain boundaries due to the removal and recovery of residual stress.
  • the heat treatment temperature is low, the heat treatment may be performed for a long time, and when the heat treatment temperature is high, the heat treatment may be performed for a short time.
  • the annealing temperature in the low-temperature annealing step S09 is less than 100°C, or the holding time at the annealing temperature is less than 0.1 seconds, there is a risk that a sufficient strain relief effect will not be obtained. If it exceeds, there is a risk of recrystallization, and if the holding time at the annealing temperature exceeds 24 hours, the cost only increases.
  • a straightening process using a tension leveler or the like may be added after the low-temperature annealing process S09.
  • a metal plating layer may be formed on the surface.
  • Sn plating, Ag plating, Ni plating, Au plating, Pd plating, Rh plating, etc. can be applied, for example.
  • the copper alloy profile strip 10 of the present embodiment is manufactured.
  • the Mg content is in the range of more than 10 mass ppm and less than 1.2 mass%, and the P content is in the range of 0 mass ppm to 200 mass ppm. Therefore, the heat resistance can be sufficiently improved by dissolving Mg in the matrix of copper.
  • the electrical conductivity is 48% IACS or higher, heat generation during energization can be suppressed, making it suitable as a material for parts for electronic and electrical equipment such as terminals, bus bars, lead frames, and heat dissipation substrates.
  • the heat resistant temperature T1 of the thick portion 11 is 260° C. or higher
  • the heat resistant temperature T2 of the thin portion 12 is 240° C. or higher, and 0.9 ⁇ T1/T2 ⁇ 1.25.
  • the difference in heat resistance between the thick portion 11 and the thin portion 12 is small, so that it can be used stably even in a high temperature environment.
  • the low-angle grain boundary ratios B1 and B2 of the thick portion 11 and the thin portion 12 are respectively 80% or less, and the low-angle grain boundary ratio B1/B2 is 0.8 ⁇ B1/B2 ⁇ 1.2.
  • the crystal structure is controlled so that the area ratio of crystals having a crystal orientation within 10° with respect to the Goss orientation ⁇ 011 ⁇ ⁇ 100> is 1% or more in each of the thick portion and the thin portion. , recovery and recrystallization due to movement of dislocations are unlikely to occur, and the heat resistance of the thick portion 11 and the thin portion 12 can be sufficiently improved.
  • the S content is 10 mass ppm or less
  • the Se content is 5 mass ppm or less
  • the Te content is 5 mass ppm or less
  • the Sb content is 5 mass ppm or less
  • Bi When the content of is 5 mass ppm or less, the content of As is 5 mass ppm or less, and the total content of S, Se, Te, Sb, Bi, and As is 24 mass ppm or less, Mg and a compound are generated Since the contents of S, Se, Te, Sb, Bi, and As, which are elements that .
  • the Ag content is in the range of 5 ppm by mass or more and 20 ppm by mass or less, Ag segregates in the vicinity of grain boundaries. Field diffusion is suppressed, and the heat resistant temperature can be further improved.
  • the Vickers hardness H1 of the thick portion 11 is 70 Hv or more
  • the Vickers hardness H2 of the thin portion 12 is 75 Hv or more
  • the strength is excellent, and the difference in strength between the thick portion 11 and the thin portion 12 is small, so that it can be used stably.
  • a metal plating layer is formed on the surface of the copper alloy profile strip 10 of the present embodiment, various characteristics can be imparted to the surface, and it can be applied to electronic and electrical applications such as terminals, bus bars, and heat dissipation substrates. It is particularly suitable as a material for equipment parts.
  • the electronic/electrical device parts (terminals, bus bars, lead frames, heat dissipation substrates, etc.) of the present embodiment are made of the copper alloy profile strip 10 described above, they are excellent even in a high-temperature environment. characteristics can be exhibited.
  • the present invention is not limited thereto. , can be changed as appropriate without departing from the technical idea of the invention.
  • the method for manufacturing the copper alloy deformed strip 10 has been described, but the method for manufacturing the copper alloy deformed strip 10 is not limited to the method described in the embodiment, and the existing You may manufacture by selecting the manufacturing method of suitably.
  • the dual-gauge strip having the shape shown in FIG. 1 has been described as an example, but the multi-gauge strip is not limited to this, and may be a multi-gauge strip having another cross-sectional shape.
  • a raw material made of pure copper with a purity of 99.999 mass% or more was charged into a high-purity graphite crucible by a zone melting refining method, and high-frequency melting was performed in an atmosphere furnace in an Ar gas atmosphere.
  • various 0.1 mass% master alloys made using high-purity copper of 6N (purity 99.9999 mass%) or higher and pure metals having a purity of 2N (purity 99 mass%) or higher are used.
  • the composition was prepared as shown in Tables 1 and 2, and poured into a heat insulating material (isowool) mold to produce an ingot.
  • the size of the ingot was about 30 mm thick ⁇ about 60 mm wide ⁇ about 150 to 200 mm long.
  • the obtained ingot was heated under various temperature conditions for 1 hour in an Ar gas atmosphere, subjected to surface grinding to remove the oxide film, and cut into a predetermined size. After that, the thickness was appropriately adjusted so as to obtain the final thickness, and cutting was performed.
  • Each of the cut samples was subjected to rough rolling at room temperature at the reduction rates shown in Tables 3 and 4, and then subjected to intermediate heat treatment under the heat treatment conditions shown in Tables 3 and 4.
  • the plate-shaped die is reciprocated along the molding surface facing the molding surface of the die so that the thicknesses of the thick portion and the thin portion become the values shown in Tables 3 and 4, respectively.
  • Stepped deformation processing was carried out with rolling rolls.
  • the upper pre-heat treatment was performed under the conditions described in Tables 3 and 4.
  • finishing was performed under the conditions shown in Tables 3 and 4, and low-temperature annealing was performed with the exception of some samples. produced.
  • composition analysis A measurement sample was taken from the obtained ingot, Mg was measured by inductively coupled plasma atomic emission spectrometry, and other elements were measured by glow discharge mass spectrometry (GD-MS). In addition, the measurement was performed at two points, the central portion and the end portion in the width direction of the sample, and the larger content was taken as the content of the sample. As a result, it was confirmed that the composition was as shown in Tables 1 and 2.
  • the low angle grain boundary ratios B1 and B2 in the thick and thin portions were obtained as follows using an EBSD measuring device and OIM analysis software. After performing mechanical polishing using waterproof abrasive paper and diamond abrasive grains, final polishing was performed using a colloidal silica solution.
  • an EBSD measurement device Quanta FEG 450 manufactured by FEI, OIM Data Collection manufactured by EDAX/TSL (currently AMETEK)) and analysis software (manufactured by EDAX/TSL (currently AMETEK) OIM Data Analysis ver.7.3 .1), an electron beam acceleration voltage of 15 kV, a measurement area of 10000 ⁇ m 2 or more, except for the measurement points where the CI value is 0.1 or less at a measurement interval step of 0.25 ⁇ m, the misorientation of each crystal grain , and the grain boundaries between the measurement points where the orientation difference between the adjacent measurement points is 15° or more, and the average grain size A was obtained by Area Fraction using the data analysis software OIM.
  • the data is analyzed with a measurement area of 10000 ⁇ m 2 or more in multiple fields of view so that a total of 1000 or more crystal grains are included by measuring in steps with a measurement interval of 1/10 or less of the average grain size A. Analysis was performed excluding measurement points where the CI value analyzed by soft OIM was 0.1 or less.
  • L LB is the length of the grain boundary
  • L HB is the length of the large angle grain boundary between the measurement points exceeding 15 °.
  • a low-angle grain boundary ratio B L LB /(L LB +L HB ) was obtained as the thickness ratio.
  • Goss orientation When measuring the above small angle grain boundary and subgrain boundary length ratio, the orientation of each crystal grain is also analyzed to determine whether each analysis point is the target Goss orientation (within 10 ° from the ideal orientation). was determined, and the Goss orientation ratio (area ratio of crystal orientation) in the measurement region was determined.
  • the heat resistance temperature conforms to JCBA T325:2013 of the Japan Copper and Brass Association, acquires an isochronous softening curve by Vickers hardness in heat treatment for 1 hour, and obtains the heating temperature at which the hardness becomes 80% of the hardness before heat treatment. evaluated.
  • the rolled surface was used as the surface for Vickers hardness measurement. Tables 5 and 6 show the evaluation results.
  • test piece having a width of 10 mm and a length of 60 mm was taken from the strip material for characteristic evaluation, and the electrical resistance was determined by the four-probe method. Also, the dimensions of the test piece were measured using a micrometer, and the volume of the test piece was calculated. Then, the electrical conductivity was calculated from the measured electrical resistance value and volume. The test piece was taken so that its longitudinal direction was parallel to the rolling direction of the strip for characteristic evaluation. Tables 5 and 6 show the evaluation results.
  • Comparative Example 1 since the Mg content was less than the range of the present invention, the heat resistance temperature was low and the heat resistance was insufficient.
  • Comparative Example 2 the content of Mg exceeded the range of the present invention, and the electrical conductivity was low.
  • Comparative Example 3 the P content exceeded 200 ppm by mass, the heat resistance temperature was low, and the heat resistance was insufficient.
  • Comparative Example 4 the low-angle grain boundary ratio exceeded 80%, the heat resistance temperature was low, and the heat resistance was insufficient.
  • Comparative Example 5 the area ratio of Goss orientation was less than 1%, the heat resistance temperature was low, and the heat resistance was insufficient.
  • the ratio B1/B2 between the low-angle grain boundary ratio B1 in the thick portion and the low-angle grain boundary ratio B2 in the thin portion is outside the range of the present invention, and the heat-resistant temperature T1 of the thick portion and the heat-resistant temperature of the thin portion
  • the ratio T1/T2 to T2 was out of the range of the present invention, resulting in variations in heat resistance.
  • Examples 1 to 30 of the present invention it was confirmed that the heat resistance was improved in a well-balanced manner between the thick portion and the thin portion. From the above, according to the example of the present invention, there is little difference in properties such as strength and heat resistance between the thick part and the thin part, and the copper alloy profile strip can be stably used in a high temperature environment. It was confirmed that it is possible to provide
  • a copper alloy profile strip that can be stably used in a high-temperature environment with little difference in properties such as strength and heat resistance between the thick part and the thin part, and an electronic device made of this copper alloy profile strip. ⁇ It becomes possible to provide electronic device parts, terminals, bus bars, lead frames, and heat dissipation boards.

Abstract

L'invention concerne un matériau de barre déformé en alliage de cuivre qui est équipé d'une partie épaisse et d'une partie mince d'épaisseur réciproquement différente dans un plan transversal perpendiculaire à une direction longitudinale. Plus précisément, l'invention fournit un matériau de barre déformé en alliage de cuivre de conductivité élevée et d'excellente résistance à la chaleur, qui présente une composition telle que sa teneur en Mg est supérieure à １０ｐｐｍ en masse et inférieure à １,２% en masse, sa teneur en P se situe à l'intérieur d'une plage supérieure ou égale à ０ｐｐｍ en masse et inférieure ou égale à ２００ｐｐｍ en masse, et le reste est constitué de Cu et des impuretés inévitables. En outre, ce matériau de barre déformé en alliage de cuivre présente une conductivité supérieure ou égale à 48%, une température de résistance à la chaleur (T1) de ladite partie épaisse supérieure ou égale à 260°C, une température de résistance à la chaleur (T2) de ladite partie mince supérieure ou égale à 240°C, ０,９＜Ｔ１／Ｔ２＜１,２５ étant satisfait, une proportion (B1) de joint de grains à faible angle d'inclinaison dans ladite partie épaisse inférieure ou égale à 80%, une proportion (B2) de joint de grains à faible angle d'inclinaison dans ladite partie épaisse inférieure ou égale à 80%, ０,８＜Ｂ１／Ｂ２＜１,２ étant satisfait, et un rapport surfacique de cristaux ayant une orientation cristalline inférieure à 10° vis-à-vis d'une orientation Goss ｛０１１｝＜１００＞ supérieur ou égal à 1% pour chacune desdites parties épaisse et mince.
PCT/JP2022/048113 2021-12-28 2022-12-27 Matériau de barre déformé en alliage de cuivre, composant pour appareil électronique ou électrique, borne, barre omnibus, grille de connexion, et substrat de dissipation de chaleur WO2023127851A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003136103A (ja) * 2001-11-02 2003-05-14 Mitsubishi Shindoh Co Ltd 異形条の製造方法およびリードフレームの製造方法
JP2020128598A (ja) * 2020-05-26 2020-08-27 三菱マテリアル株式会社 銅圧延板及び電子・電気機器用部品
WO2020203576A1 (fr) * 2019-03-29 2020-10-08 三菱マテリアル株式会社 Plaque d'alliage de cuivre, plaque d'alliage de cuivre avec film de placage et leurs procédés de fabrication
JP2021055129A (ja) * 2019-09-27 2021-04-08 三菱マテリアル株式会社 電子・電気機器用銅合金、電子・電気機器用銅合金板条材、電子・電気機器用部品、端子、及び、バスバー
WO2021117698A1 (fr) * 2019-12-10 2021-06-17 三菱マテリアル株式会社 Tôle en alliage de cuivre, tôle en alliage de cuivre avec film de placage et leurs procédés de production
JP2022072355A (ja) * 2020-10-29 2022-05-17 三菱マテリアル株式会社 銅合金、銅合金塑性加工材、電子・電気機器用部品、端子、バスバー、リードフレーム、放熱基板

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003136103A (ja) * 2001-11-02 2003-05-14 Mitsubishi Shindoh Co Ltd 異形条の製造方法およびリードフレームの製造方法
WO2020203576A1 (fr) * 2019-03-29 2020-10-08 三菱マテリアル株式会社 Plaque d'alliage de cuivre, plaque d'alliage de cuivre avec film de placage et leurs procédés de fabrication
JP2021055129A (ja) * 2019-09-27 2021-04-08 三菱マテリアル株式会社 電子・電気機器用銅合金、電子・電気機器用銅合金板条材、電子・電気機器用部品、端子、及び、バスバー
WO2021117698A1 (fr) * 2019-12-10 2021-06-17 三菱マテリアル株式会社 Tôle en alliage de cuivre, tôle en alliage de cuivre avec film de placage et leurs procédés de production
JP2020128598A (ja) * 2020-05-26 2020-08-27 三菱マテリアル株式会社 銅圧延板及び電子・電気機器用部品
JP2022072355A (ja) * 2020-10-29 2022-05-17 三菱マテリアル株式会社 銅合金、銅合金塑性加工材、電子・電気機器用部品、端子、バスバー、リードフレーム、放熱基板

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