WO2023120433A1 - Circuit de génération de courant et circuit intégré à semi-conducteur - Google Patents

Circuit de génération de courant et circuit intégré à semi-conducteur Download PDF

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Publication number
WO2023120433A1
WO2023120433A1 PCT/JP2022/046487 JP2022046487W WO2023120433A1 WO 2023120433 A1 WO2023120433 A1 WO 2023120433A1 JP 2022046487 W JP2022046487 W JP 2022046487W WO 2023120433 A1 WO2023120433 A1 WO 2023120433A1
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WO
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Prior art keywords
current
circuit
temperature
cell
correction
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PCT/JP2022/046487
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English (en)
Japanese (ja)
Inventor
尚弘 野村
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ローム株式会社
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Publication date
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Priority to CN202280075257.6A priority Critical patent/CN118235100A/zh
Publication of WO2023120433A1 publication Critical patent/WO2023120433A1/fr

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors

Definitions

  • the present disclosure relates to a current generation circuit in a semiconductor integrated circuit.
  • a bandgap reference circuit is widely used to generate a constant voltage that is independent of temperature.
  • the bandgap reference circuit can achieve almost completely flat temperature characteristics in a certain temperature range through primary and secondary temperature compensation. Specifically, in the case of a bandgap reference circuit, for example, a flat temperature characteristic can be realized in the temperature range of 30 to 110.degree.
  • the present disclosure has been made in view of such problems, and one exemplary purpose of certain aspects thereof is to provide a current generation circuit that can set temperature characteristics more flexibly than in the past.
  • a current generation circuit includes a plurality of current cells and a synthesis circuit that synthesizes a plurality of temperature dependent currents generated by the plurality of current cells.
  • the temperature dependent current produced by each current cell is zero in the temperature range specific to that current cell and varies linearly with temperature outside the temperature range.
  • FIG. 1 is a block diagram of a semiconductor integrated circuit according to an embodiment.
  • FIG. 2 is a block diagram of a current generation circuit.
  • FIG. 3 is a diagram explaining an example of the operation of the current generation circuit.
  • FIG. 4 is a diagram explaining another example of the operation of the current generation circuit.
  • FIG. 5 is a diagram explaining an example of the operation of the current generation circuit.
  • FIG. 6 is a circuit diagram showing a configuration example of a low temperature correction cell.
  • FIG. 7 is a diagram for explaining the operation of the low temperature correction cell of FIG.
  • FIG. 8 is a circuit diagram showing a configuration example of a high temperature correction cell.
  • FIG. 9 is a diagram for explaining the operation of the high temperature correction cell of FIG.
  • FIG. 10 is a circuit diagram of a synthesis circuit according to one embodiment.
  • FIG. 11 is a circuit diagram of a combining circuit according to one embodiment.
  • FIG. 12 is a circuit diagram showing a semiconductor integrated circuit according to an example.
  • FIG. 13 is a diagram showing temperature characteristics of the output voltage VBGR of the bandgap reference circuit of FIG. 14 is a circuit diagram of a current generation circuit according to Modification 1.
  • FIG. 15A and 15B are diagrams for explaining the operation of the current generation circuit of FIG. 14.
  • FIG. FIG. 16 is a diagram for explaining a setting example of a synthesizing circuit in the current generation circuit of FIG.
  • a current generation circuit includes a plurality of current cells and a synthesis circuit that synthesizes a plurality of temperature dependent currents generated by the plurality of current cells.
  • the temperature dependent current produced by each current cell is zero in the temperature range specific to that current cell and varies linearly with temperature outside the temperature range.
  • this current generation circuit it is possible to generate a current that is zero or constant in the temperature range in which conventional temperature compensation is performed, and that has temperature dependence in a low temperature region or a high temperature region where conventional temperature compensation is insufficient. .
  • this current generation circuit as a temperature characteristic correction circuit, the temperature dependence of the object can be compensated.
  • the plurality of current cells may include at least one low temperature correction cell.
  • a cold correction cell may produce a cold correction current that is zero in the temperature range above its own threshold and has a negative temperature coefficient in the temperature range below the threshold.
  • a cold correction cell may generate a cold correction current by subtracting a current with a positive temperature coefficient from a current with a negative temperature coefficient.
  • the cold correction cell has a first current mirror circuit, a second current mirror circuit that folds a current having a negative temperature coefficient and feeds the input of the first current mirror circuit, and a positive temperature coefficient. a third current mirror circuit that folds back and draws the current from the input of the first current mirror circuit to another path.
  • the plurality of current cells may include at least one high temperature compensation cell.
  • a high temperature correction cell may produce a high temperature correction current that is zero in the temperature range below its own threshold and has a positive temperature coefficient in the temperature range above the threshold.
  • a high temperature correction cell may generate a high temperature correction current by subtracting a current with a negative temperature coefficient from a current with a positive temperature coefficient.
  • the high temperature correction cell has a fourth current mirror circuit, a fifth current mirror circuit that folds back a current having a positive temperature coefficient and feeds the input of the fourth current mirror circuit, and a negative temperature coefficient. a sixth current mirror circuit that folds back and draws the current from the input of the fourth current mirror circuit to another path.
  • the combining circuit may have a variable ratio of multiple currents.
  • the temperature compensation circuit may further include a constant current cell that generates a constant current independent of temperature.
  • a combining circuit may combine multiple temperature dependent currents and constant currents.
  • a constant current cell may add a current with a positive temperature coefficient and a current with a negative temperature coefficient to produce a constant current.
  • the temperature compensation circuit may be monolithically integrated on one semiconductor substrate. "Integrated integration" includes cases in which all circuit components are formed on a semiconductor substrate and cases in which the main components of a circuit are integrated. A resistor, capacitor, or the like may be provided outside the semiconductor substrate. By integrating the circuits on one chip, the circuit area can be reduced and the characteristics of the circuit elements can be kept uniform.
  • a semiconductor integrated circuit may include a bandgap reference circuit and any of the above-described current generating circuits connected to the bandgap reference circuit.
  • a state in which member A is connected to member B refers to a case in which member A and member B are physically directly connected, or a case in which member A and member B are electrically connected to each other. It also includes the case of being indirectly connected via other members that do not substantially affect the connected state or impair the functions and effects achieved by their combination.
  • the state in which member C is provided between member A and member B refers to the case where member A and member C or member B and member C are directly connected, as well as the case where they are electrically connected. It also includes the case of being indirectly connected through other members that do not substantially affect the physical connection state or impair the functions and effects achieved by their combination.
  • FIG. 1 is a block diagram of a semiconductor integrated circuit 100 according to an embodiment.
  • the semiconductor integrated circuit 100 includes a circuit to be corrected 110 whose temperature characteristics are to be compensated, and a temperature characteristics correction circuit 120 .
  • the temperature characteristic correction circuit 120 supplies a correction current Icomp having temperature dependence to the circuit to be corrected 110 to correct the temperature dependence of the circuit to be corrected 110 .
  • the corrected circuit 110 may be a constant voltage source or a constant current source.
  • FIG. 2 is a block diagram of the current generation circuit 200. As shown in FIG.
  • the current generation circuit 200 comprises a plurality of current cells 210 and a combiner circuit 220 .
  • a plurality of current cells 210 generate a temperature dependent current.
  • the temperature dependent current produced by each current cell 210 is zero in the temperature range specific to that current cell and varies linearly with temperature outside the temperature range.
  • the high temperature correction cell 214 produces a high temperature correction current Ib that is zero in the temperature range below its own threshold Tb and has a positive temperature coefficient ⁇ in the temperature range above the threshold Tb.
  • Ib 0 (T ⁇ Tb)
  • Ib ⁇ (T ⁇ Tb) (Tb ⁇ T)
  • the plurality of current cells 210 includes at least one (m) low temperature correction cells 212_1 to 212_m and/or at least one (n) high temperature correction cells 214_1 to 214_n.
  • the current cell 210 may include only a plurality of low temperature correction cells 212.
  • Current cells 210 may include only a plurality of high temperature compensation cells 214 .
  • Current cells 210 may include both one or more cold correction cells 212 and one or more hot correction cells 214 .
  • the synthesizing circuit 220 synthesizes a plurality of temperature dependent currents Ia and Ib generated by the plurality of current cells 210 to generate a correction current Icomp.
  • the low-temperature correction current generated by the i-th (1 ⁇ i ⁇ m) low-temperature correction cell 212_i is denoted by Ia i
  • the high-temperature correction current generated by the j-th (1 ⁇ j ⁇ n) high-temperature correction cell 214_j is denoted by Ib j
  • the correction current Icomp is represented by the formula (1).
  • Ca i , Cb j are coefficients of synthesis.
  • FIG. 3 is a diagram illustrating an example of the operation of the current generating circuit 200.
  • the correction current Icomp is zero in the temperature range R1 of Ta3 ⁇ T, has a negative temperature coefficient ⁇ in the temperature range R2 of Ta2 ⁇ T ⁇ Ta3, and has a negative temperature coefficient ⁇ of 2 ⁇ in the temperature range R3 of Ta1 ⁇ T ⁇ Ta2. It has a negative temperature coefficient, and has a negative temperature coefficient of 3 ⁇ in the temperature range R4 where T ⁇ Ta1.
  • FIG. 4 is a diagram explaining another example of the operation of the current generation circuit 200.
  • the correction current Icomp is zero in the temperature range R1 with T ⁇ Tb1, has a positive temperature coefficient ⁇ in the temperature range R2 with Tb1 ⁇ T ⁇ Tb2, and has a positive temperature coefficient ⁇ of 2 ⁇ in the temperature range R3 with Tb2 ⁇ T. It has a temperature coefficient.
  • FIG. 5 is a diagram illustrating an example of the operation of the current generating circuit 200.
  • the correction current Icomp is zero in the temperature range R1 of Ta2 ⁇ T ⁇ Tb1, has a negative temperature coefficient ⁇ in the temperature range R2 of Ta1 ⁇ T ⁇ Ta2, and has a negative temperature coefficient ⁇ of 2 ⁇ in the temperature range R3 of T ⁇ Ta1. It has a negative temperature coefficient. Further, the correction current Icomp has a positive temperature coefficient ⁇ in the temperature range R4 of Tb1 ⁇ T ⁇ Tb2, and has a positive temperature coefficient of 2 ⁇ in the temperature range R5 of Tb2 ⁇ T.
  • the above is the operation of the current generating circuit 200.
  • the number of current cells 210, the combination of the types of the current cells 210, and the combination of the coefficients Ca and Cb of the synthesis circuit 220 can generate the correction current Icomp having various temperature characteristics.
  • the temperature dependence of the correction current Icomp may be designed in consideration of the temperature characteristics of the circuit 110 to be corrected.
  • FIG. 6 is a circuit diagram showing a configuration example of the low temperature correction cell 212. As shown in FIG.
  • the low temperature correction cell 212 includes a first current mirror circuit CM1 to a third current mirror circuit CM3.
  • a current Ip having a positive temperature coefficient and a current In having a negative temperature coefficient are supplied to the low temperature correction cell 212 .
  • the current Ip with a positive temperature coefficient may be a PTAT (Proportional To Absolute Temperature) current proportional to absolute temperature.
  • the current In having a negative temperature coefficient may be a CTAT (Complementary to Absolute Temperature) current that is complementary to the PTAT current.
  • the low temperature correction cell 212 is configured to generate a low temperature correction current Ia by subtracting a current Ip' having a positive temperature coefficient from a current In' having a negative temperature coefficient.
  • the second current mirror circuit CM2 folds back the current In having a negative temperature coefficient and supplies the folded current In' to the input of the first current mirror circuit CM1.
  • the third current mirror circuit CM3 folds back the current Ip having a positive temperature coefficient and draws the folded current Ip' from the input of the first current mirror circuit CM1 to another path.
  • FIG. 7 is a diagram illustrating the operation of the low temperature correction cell 212 of FIG.
  • K2 and K3 are mirror ratios of the second current mirror circuit CM2 and the third current mirror circuit CM3.
  • the threshold temperature Ta is determined by the temperature at which the output current In' of the second current mirror circuit CM2 and the output current Ip' of the third current mirror circuit CM3 are the same.
  • the low-temperature correction current Ia which is the output current of the first current mirror circuit CM1
  • the threshold temperature Ta can be adjusted according to mirror ratios K 2 and K 3 of the two current mirror circuits CM2 and CM3.
  • FIG. 8 is a circuit diagram showing a configuration example of the high temperature correction cell 214. As shown in FIG. The high temperature correction cell 214 includes a fourth current mirror circuit CM4 to a sixth current mirror circuit CM6.
  • a current Ip having a positive temperature coefficient and a current In having a negative temperature coefficient are supplied to the high temperature correction cell 214 .
  • the high temperature correction cell 214 is configured to generate a high temperature correction current Ib by subtracting a current In' having a negative temperature coefficient from a current Ip' having a positive and negative temperature coefficient.
  • the fifth current mirror circuit CM5 folds back the current Ip with a positive temperature coefficient and supplies the folded current Ip' to the input of the fourth current mirror circuit CM4.
  • the sixth current mirror circuit CM6 folds back the current In having a negative temperature coefficient, and draws the folded current In' from the input of the fourth current mirror circuit CM4 to another path.
  • FIG. 9 is a diagram illustrating the operation of the high temperature correction cell 214 of FIG.
  • K5 and K6 are mirror ratios of the fifth current mirror circuit CM5 and the sixth current mirror circuit CM6.
  • the threshold temperature Tb is determined by the temperature at which the output current Ip' of the fifth current mirror circuit CM5 and the output current In' of the sixth current mirror circuit CM6 are the same.
  • the high temperature correction current Ib which is the output current of the fourth current mirror circuit CM4, becomes zero.
  • the threshold temperature Tb can be adjusted according to mirror ratios K5 and K6 of the two current mirror circuits CM5 and CM6.
  • the current generation circuit 200 may be individually designed according to the corrected circuit 110 to be corrected. Alternatively, it may be designed with versatility that can correspond to various corrected circuits 110 . In this case, the synthesizing circuit 220 may be configured such that the coefficients Ca 1 to Cam and the coefficients Cb 1 to Cb n are variable.
  • FIG. 10 is a circuit diagram of a combining circuit 220A according to one embodiment.
  • Combining circuit 220 A includes a plurality of current mirror circuits 222 corresponding to a plurality of current cells 210 .
  • the plurality of current mirror circuits 222 are switchable in mirror ratio.
  • the mirror ratio of current mirror circuit 222 corresponds to coefficients Ca and Cb.
  • the synthesizing circuit 220A outputs the total current of the output currents of the plurality of current mirror circuits 222 as the correction current Icomp.
  • Combining circuit 220A of FIG. 10 is capable of generating positive correction current Icomp.
  • FIG. 11 is a circuit diagram of a combining circuit 220B according to one embodiment.
  • Combining circuit 220 includes multiple current mirror circuits 222 corresponding to multiple current cells 210 . Similar to FIG. 10, each current mirror circuit 222 can switch the mirror ratio. Further, in FIG. 11, each current mirror circuit 222 is capable of switching the direction (polarity, ie source/sink) of the output current. When the polarity of the current mirror circuit 222 is positive (source), the coefficient Ca/Cb is positive, and when the polarity of the current mirror circuit 222 is negative (sink), the coefficient Ca/Cb takes a negative value. be able to.
  • FIG. 12 is a circuit diagram showing a semiconductor integrated circuit 100C according to one embodiment.
  • the semiconductor integrated circuit 100C includes a bandgap reference circuit 110C, which is a circuit to be corrected.
  • a primary correction circuit 114 and a secondary correction circuit 116 are provided in the bandgap reference circuit 110C.
  • the primary correction circuit 114 includes a resistor and corrects the primary temperature characteristic.
  • the secondary correction circuit 116 is connected to the collectors of the differential pair of the amplifier 112 and corrects the secondary temperature characteristics.
  • the current generation circuit 200 is connected to the collectors of the differential pair of the amplifier 112 and corrects the temperature dependence that cannot be compensated by the primary correction circuit 114 and secondary correction circuit 116 .
  • FIG. 13 is a diagram showing temperature characteristics of the output voltage VBGR of the bandgap reference circuit 110C of FIG.
  • a dashed line (i) indicates the temperature characteristics when the current generation circuit 200 is not provided, and temperature dependence higher than the third order remains.
  • a solid line (ii) indicates the temperature characteristics when the current generating circuit 200 is added.
  • the current generation circuit 200 can correct the temperature dependence of each of the high temperature region and the low temperature region, and can stabilize the voltage V BGR within a range of ⁇ 1 mV over a wide range of -60°C to 140°C.
  • FIG. 14 is a circuit diagram of a current generation circuit 200D according to Modification 1.
  • the current generation circuit 200D includes a low temperature correction cell 212, a high temperature correction cell 214, constant current cells 216 and 218, and a combining circuit 220.
  • the low temperature correction cell 212 generates the low temperature correction current Ia.
  • a high temperature correction cell 214 produces a high temperature correction current Ib.
  • the constant current cells 216, 218 generate constant currents Ic1, Ic2 of different current amounts, which are not temperature dependent.
  • FIG. 15 is a diagram explaining the operation of the current generation circuit 200D of FIG.
  • the left diagram of FIG. 15 shows the currents Ia, Ib, Ic1 and Ic2.
  • the threshold value Ta of the low temperature correction cell 212 is 80° C.
  • the threshold value Tb of the high temperature correction cell 214 is 20° C.
  • a constant current cell 218 can receive a current Ip with a positive temperature coefficient and a current In with a negative temperature coefficient and add them together to generate a constant current Ic2.
  • a current generating circuit comprising:
  • the current of item 1 wherein the cold correction cell is zero in a temperature range above its own threshold and produces a cold correction current with a negative temperature coefficient in a temperature range below the threshold. generation circuit.
  • the low temperature correction cell comprises: a first current mirror circuit; a second current mirror circuit that folds back the current having the negative temperature coefficient and supplies it to the input of the first current mirror circuit; a third current mirror circuit that folds back the current having the positive temperature coefficient and draws it from the input of the first current mirror circuit to another path;
  • the plurality of current cells includes at least one high temperature compensation cell; 5. Any of items 1 through 4, wherein the high temperature correction cell is zero in a temperature range below its own threshold and produces a high temperature correction current with a positive temperature coefficient in a temperature range above the threshold.
  • the current generating circuit according to any one of the preceding claims.
  • the high temperature correction cell comprises: a fourth current mirror circuit; a fifth current mirror circuit that folds back the current having the positive temperature coefficient and supplies it to the input of the fourth current mirror circuit; a sixth current mirror circuit that folds back the current having the negative temperature coefficient and draws it from the input of the fourth current mirror circuit to another path;
  • a current generating circuit according to item 6, comprising:
  • (Item 8) 8. The current generation circuit according to any one of items 1 to 7, wherein the synthesis circuit has a variable ratio of the plurality of currents.
  • a semiconductor integrated circuit comprising:
  • the present disclosure relates to semiconductor integrated circuits.
  • DESCRIPTION OF SYMBOLS 100 Semiconductor integrated circuit, 110... Circuit to be corrected, 120... Temperature characteristic correction circuit, 200... Current generation circuit, 210... Current cell, 212... Low temperature correction cell, 214... High temperature correction cell, 220... Synthesis circuit, CM1... Third 1 current mirror circuit, CM2...second current mirror circuit, CM3...third current mirror circuit, CM4...fourth current mirror circuit, CM5...fifth current mirror circuit, CM6...sixth current mirror circuit.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

Circuit de génération de courant (200), comprenant une pluralité de cellules de courant (210) et un circuit de synthèse (220). Le courant dépendant de la température généré par chaque cellule actuelle (210) est nul dans la plage de température spécifique à celle de la cellule actuelle et varie linéairement avec une température en dehors de la plage de température. Le circuit de synthèse (220) synthétise une pluralité de courants dépendants de la température générés par la pluralité de cellules actuelles (210) et produit un courant de correction (Icomp).
PCT/JP2022/046487 2021-12-24 2022-12-16 Circuit de génération de courant et circuit intégré à semi-conducteur WO2023120433A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202280075257.6A CN118235100A (zh) 2021-12-24 2022-12-16 电流生成电路及半导体集成电路

Applications Claiming Priority (2)

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JP2021-210827 2021-12-24
JP2021210827 2021-12-24

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074129A (ja) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd 温度特性補正回路
JP2010152566A (ja) * 2008-12-24 2010-07-08 Fujitsu Semiconductor Ltd 電流生成回路、電流生成方法及び電子機器
JP2011232931A (ja) * 2010-04-27 2011-11-17 Rohm Co Ltd 電流生成回路およびそれを用いた基準電圧回路

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006074129A (ja) * 2004-08-31 2006-03-16 Sanyo Electric Co Ltd 温度特性補正回路
JP2010152566A (ja) * 2008-12-24 2010-07-08 Fujitsu Semiconductor Ltd 電流生成回路、電流生成方法及び電子機器
JP2011232931A (ja) * 2010-04-27 2011-11-17 Rohm Co Ltd 電流生成回路およびそれを用いた基準電圧回路

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