WO2023120016A1 - Procédé de nettoyage de plaquette semi-conductrice et procédé de production de plaquette semi-conductrice - Google Patents

Procédé de nettoyage de plaquette semi-conductrice et procédé de production de plaquette semi-conductrice Download PDF

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Publication number
WO2023120016A1
WO2023120016A1 PCT/JP2022/043406 JP2022043406W WO2023120016A1 WO 2023120016 A1 WO2023120016 A1 WO 2023120016A1 JP 2022043406 W JP2022043406 W JP 2022043406W WO 2023120016 A1 WO2023120016 A1 WO 2023120016A1
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WIPO (PCT)
Prior art keywords
semiconductor wafer
pure water
wafer
cleaning
supplied
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PCT/JP2022/043406
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English (en)
Japanese (ja)
Inventor
渓 芦馬
知洋 大久保
真美 久保田
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株式会社Sumco
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Publication of WO2023120016A1 publication Critical patent/WO2023120016A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a method for cleaning a semiconductor wafer and a method for manufacturing a semiconductor wafer.
  • semiconductor wafers such as silicon wafers have been used as substrates for semiconductor devices.
  • a semiconductor wafer is obtained by subjecting a single crystal ingot grown by the Czochralski (CZ) method or the like to wafer processing.
  • CZ Czochralski
  • particles such as polishing dust adhere to the surface of the semiconductor wafer. For this reason, the particles are removed by cleaning the semiconductor wafer after processing.
  • the cleaning method of semiconductor wafers can be divided into batch type, which cleans multiple wafers at the same time, and single wafer type, which cleans wafers one by one.
  • the amount of chemicals required for cleaning is relatively small, mutual contamination between wafers can be avoided, and the large diameter makes it difficult to process multiple semiconductor wafers at the same time. For this reason, in recent years, a single-wafer cleaning method has come to be used (see, for example, Patent Document 1).
  • the present invention has been made in view of the above problems, and an object of the present invention is to propose a method for cleaning a semiconductor wafer that can clean the surface of the semiconductor wafer more uniformly than before.
  • a semiconductor wafer cleaning method comprising supplying a chemical solution to the surface of the semiconductor wafer to clean the surface of the semiconductor wafer while rotating the semiconductor wafer, Before supplying the chemical solution, while rotating the semiconductor wafer, pure water is supplied to the central portion of the surface of the semiconductor wafer.
  • a method of cleaning a semiconductor wafer characterized in that the supply of water is switched to the supply of the chemical solution.
  • a semiconductor wafer obtained by subjecting a semiconductor ingot to a wafer processing treatment is subjected to the cleaning method for a semiconductor wafer according to any one of [1] to [5] above.
  • the surface of the semiconductor wafer can be cleaned more uniformly than before.
  • FIG. 5 is a diagram showing the number of LPDs for a conventional example and invention example 1;
  • FIG. 5 is a diagram showing the relationship between the pure water supply angle with respect to the vertical direction of the wafer and the number of LPDs;
  • a method for cleaning a semiconductor wafer according to the present invention is a method for cleaning a semiconductor wafer by supplying a chemical solution to the surface of the semiconductor wafer while rotating the semiconductor wafer to clean the surface.
  • pure water is supplied to the central portion of the surface of the semiconductor wafer, and in a state in which a film of pure water is formed on the surface, pure water is applied. is switched from the supply of the liquid to the supply of the chemical solution.
  • the water splash phenomenon causes turbulence in the chemical solution, and the surface of the semiconductor wafers may not be uniformly cleaned.
  • a surface inspection device for example, KLA-Tencor's Surfscan SP5 or later
  • a spiral bright point defect reflecting the turbulence is detected.
  • LPD Light Point Defect
  • the present inventors performed cleaning of semiconductor wafers under various conditions, and investigated the behavior of the chemical solution supplied to the wafer surface and the LPD pattern detected on the surface of the semiconductor wafer after cleaning. investigated in detail the relationship between As a result, in order to uniformly clean the surface of the semiconductor wafer, it is necessary to prevent the turbulent flow of the chemical solution in the initial stage of cleaning, that is, immediately after starting the supply of the chemical solution to the surface of the dry semiconductor wafer. It was found that it is extremely important to suppress
  • the inventors of the present invention tried to clean the semiconductor wafer while rotating the semiconductor wafer at a rotation speed lower than the conventional one.
  • the chemical solutions used for cleaning ozone water, hydrofluoric acid solution, SC-1 cleaning solution, ammonia hydrogen peroxide solution, etc.
  • the chemical solution did not spread uniformly on the wafer surface, resulting in uneven thickness of the formed oxide film and uneven etching, making it impossible to uniformly clean the semiconductor wafer.
  • the inventors came up with the idea of supplying pure water, which is less reactive than the chemical solution, to the surface of the semiconductor wafer before supplying the chemical solution. Then, the inventors of the present invention switched the supply of pure water to chemical solution while a pure water film was formed on the surface of the semiconductor wafer, thereby diluting the chemical solution with the pure water existing on the wafer surface. The reactivity is reduced, which suppresses the turbulent flow of the high-concentration chemical immediately after the supply of the chemical is started. The present invention was completed by discovering that it was possible to wash more uniformly.
  • the present invention is characterized in that the supply of pure water is switched to the supply of chemicals in a state in which pure water is supplied to the surface of a semiconductor wafer to form a film of pure water.
  • conventionally known methods can be appropriately used and are not limited. Each step will be described below.
  • ⁇ Pure water supply process> First, while rotating a semiconductor wafer to be cleaned, pure water is supplied to the center of the surface of the semiconductor wafer to form a pure water film on the surface of the semiconductor wafer (pure water supply step).
  • any semiconductor wafer such as a silicon wafer, a germanium wafer, or a gallium arsenide wafer, can be used as the semiconductor wafer to be cleaned, but the present invention can particularly preferably clean silicon wafers.
  • the semiconductor wafer can be a monocrystalline wafer or a polycrystalline wafer.
  • the semiconductor wafer can be an epitaxial wafer or an annealed wafer. The diameter, conductivity type, resistivity, etc. of the semiconductor wafer are also not limited.
  • the rotation of the semiconductor wafer can be performed by placing the semiconductor wafer on the rotary table of a general single-wafer cleaning device for semiconductor wafers and rotating the rotary table.
  • the rotation speed of the semiconductor wafer can be adjusted by controlling the rotation speed of the turntable.
  • Pure water is supplied toward the center of the semiconductor wafer to be cleaned.
  • centrifugal force causes the pure water to spread uniformly over the entire wafer from the center to the outer periphery of the semiconductor wafer.
  • a pure water film can be formed on the surface of the semiconductor wafer.
  • the pure water is supplied by discharging pure water onto the surface of the semiconductor wafer W from a pure water supply nozzle 1 arranged above the central portion of the semiconductor wafer W, as schematically shown in FIG. 1(a). It can be done by
  • Pure water is supplied at least until a pure water film is formed on the entire surface of the semiconductor wafer W.
  • the time it takes for the pure water film to form depends on the diameter of the semiconductor wafer W, the flow rate of the pure water, and the rotation speed of the semiconductor wafer W.
  • the semiconductor wafer W is a silicon wafer with a diameter of 300 mm
  • the flow rate of pure water is about 0.5 L/min
  • the rotation speed of the silicon wafer is 25 rpm, it takes about 5 seconds.
  • pure water is continuously supplied to the surface of the semiconductor wafer W until the pure water supply is switched to the chemical solution supply in the subsequent chemical solution supply step.
  • the purity of the pure water supplied to the surface of the semiconductor wafer W is not particularly limited as long as it has a purity that can achieve product quality.
  • the purity of pure water can be the so-called pure water level (eg, resistivity: 0.1 to 15 M ⁇ cm), and can also be ultrapure water level (eg, resistivity: over 15 M ⁇ cm). .
  • the supply of pure water is preferably performed while rotating the semiconductor wafer W at a rotation speed of 10 rpm or more, more preferably at a rotation speed of 25 rpm or more. As a result, a film of pure water can be formed on the surface of the semiconductor wafer W uniformly and efficiently.
  • pure water at a flow rate of 1.0 L/min or less.
  • the pure water is prevented from splashing and slipping, and the pure water film is gradually formed from the center to the outer periphery of the semiconductor wafer W. Turbulent flow of pure water can be prevented.
  • the surface of the semiconductor wafer W can be cleaned more uniformly by preventing turbulent flow of the chemical solution.
  • pure water at an angle of 5° or less with respect to the direction perpendicular to the surface of the semiconductor wafer W (hereinafter also referred to as "pure water supply angle").
  • pure water supply angle an angle of 5° or less with respect to the direction perpendicular to the surface of the semiconductor wafer W.
  • Suitable chemicals such as ozone water, hydrofluoric acid solution, SC-1 cleaning solution, ammonia hydrogen peroxide solution, etc. can be used as the chemical solution according to the purpose.
  • the chemical solution supply step includes an ozone water supply step (FIG. 1(b)) for supplying ozone water as the chemical solution and a hydrofluoric acid aqueous solution supply step (FIG. 1(c)) for supplying an aqueous HF solution as the chemical solution.
  • ozone water is supplied from the ozone water supply nozzle 2 to the surface of the semiconductor wafer W to oxidize and remove metals and organic substances adhering to the wafer surface. At the same time, an oxide film is formed below the particles adhering to the wafer surface.
  • the hydrofluoric acid aqueous solution is supplied from the hydrofluoric acid aqueous solution supply nozzle 3 to the surface of the semiconductor wafer W, and the Remove the oxide film. As a result, particles adhering to the wafer surface can be removed.
  • the chemical liquid supply process can be configured such that the ozone water supply process and the hydrofluoric acid aqueous solution supply process are repeated a predetermined number of times, and finally the ozone water supply process is performed again.
  • the chemical solution is preferably supplied at a flow rate of 0.5 L/min or more and 1.5 L/min or less, more preferably 0.8 L/min or more and 1.3 L/min or less. Thereby, the surface of the semiconductor wafer W can be cleaned satisfactorily. Further, the supply of the chemical liquid is preferably performed at a flow rate of 1.5 L/min or less, and more preferably at a flow rate of 1.3 L/min or less.
  • the supply of the chemical solution is preferably performed while rotating the semiconductor wafer W at a rotation speed of 100 rpm to 500 rpm, more preferably 100 rpm to 300 rpm.
  • the rotational speed of the semiconductor wafer W within the above range, the chemical solution can be more uniformly supplied onto the semiconductor wafer W, and the surface of the semiconductor wafer W can be more uniformly cleaned.
  • the number of rotations of the semiconductor wafer W in the chemical solution supply step is higher than the number of rotations of the semiconductor wafer W in the pure water supply step, after switching from the supply of pure water to the supply of the chemical solution, the pure water on the semiconductor wafer W is removed. It is preferable to increase the number of rotations of the semiconductor wafer W after all the water has been replaced with the chemical solution.
  • ⁇ Rinse process> pure water is supplied to the surface of the semiconductor wafer W that has undergone the supply of the chemical solution, and the surface of the semiconductor wafer W is rinsed. This can be done by supplying pure water to the surface of the semiconductor wafer W from the pure water supply nozzle 1 used in the pure water supply step.
  • the flow rate of pure water in the rinsing process can be, for example, 0.3 L/min or more and 1.5 L/min or less.
  • the rotation speed of the semiconductor wafer W can be set to, for example, 100 rpm or more and 500 rpm or less.
  • the semiconductor wafer W that has undergone the rinsing process is rotated at high speed to dry the semiconductor wafer W.
  • the number of revolutions of the semiconductor wafer W in the drying process can be, for example, 1000 rpm or more and 2000 rpm or less.
  • the surface of the semiconductor wafer W can be cleaned more uniformly than before.
  • a method for manufacturing a semiconductor wafer according to the present invention includes cleaning the surface of a semiconductor wafer obtained by subjecting a semiconductor ingot to a wafer processing treatment by the above-described method for cleaning a semiconductor wafer according to the present invention. characterized by
  • pure water is supplied to the surface of the semiconductor wafer W to form a pure water film before supplying the chemical solution, and then the pure water is supplied to the chemical solution. is configured to switch to the supply of Thereby, the surface of the semiconductor wafer W can be cleaned more uniformly than before.
  • any semiconductor ingot such as silicon, germanium, and gallium arsenide can be used as the semiconductor ingot, but the present invention can preferably clean silicon ingots.
  • a semiconductor ingot can be a monocrystalline ingot or a polycrystalline ingot.
  • the diameter, conductivity type, resistivity, etc. of the semiconductor ingot are also not limited.
  • Wafer processing can be appropriately composed of one or more of conventionally known processes such as slicing, chamfering, lapping, surface grinding, and double-sided grinding.
  • An epitaxial layer may be formed on the surface of the semiconductor wafer W obtained by the wafer processing described above to form an epitaxial wafer, or the semiconductor wafer W may be annealed to form an annealed wafer.
  • the semiconductor wafer W can be manufactured with less adhering particles and defects. .
  • the surface of each of the 10 cleaned silicon wafers was inspected using a surface inspection device (Surfscan SP7, manufactured by KLA-Tencor). At that time, oblique incident light (incident from a direction perpendicular to the wafer surface) was used as the incident light incident on the surface of the silicon wafer, and a DCO channel was used as the detection channel. LPD was detected.
  • FIG. 2 shows the number of detected LPDs for the conventional example and invention example 1.
  • the number of detected LPDs was 39.4 per silicon wafer.
  • the number of detected LPDs was 4.9 per silicon wafer, which was less than in the conventional example.
  • the variation in the number of LPDs among the silicon wafers was large, but in the invention example 1, the variation among the silicon wafers was small.
  • the surfaces of the silicon wafers were inspected using a surface inspection apparatus (manufactured by KLA-Tencor, SP-7) for each of the three silicon wafers that were cleaned. inspected.
  • FIG. 3 shows the relationship between the pure water supply angle with respect to the vertical direction of the wafer and the number of LPDs.
  • the results for the angle of 0° are shown for three selected from the ten silicon wafers cleaned in Example 1 of the invention.
  • the larger the pure water supply angle with respect to the direction perpendicular to the silicon wafer the greater the number of LPDs.
  • the pure water supply angle is 5° or less
  • the number of LPDs per silicon wafer is 5 or less, indicating that the surface of the silicon wafer can be cleaned at a high level.
  • the surface of the semiconductor wafer can be cleaned more uniformly than before, so it is useful in the semiconductor wafer manufacturing industry.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention propose un procédé de nettoyage d'une plaquette semi-conductrice, le procédé étant apte à nettoyer la surface d'une plaquette semi-conductrice plus uniformément que jamais auparavant. La présente invention concerne un procédé de nettoyage d'une plaquette(W) semi-conductrice, la surface d'une plaquette (W) semi-conductrice étant nettoyée en fournissant un agent chimique à cette dernière tout en faisant tourner la plaquette (W) semi-conductrice ; et ce procédé de nettoyage d'une plaquette (W) semi-conductrice est caractérisé en ce qu'avant l'alimentation en agent chimique ((b) et (c) dans la figure 1), de l'eau pure est fournie à la partie centrale de la surface de la plaquette (W) semi-conductrice, tout en faisant tourner la plaquette (W) semi-conductrice ((a) sur la figure 1), et une commutation est réalisée de l'alimentation en eau pure à l'alimentation en agent chimique dans un état dans lequel un film d'eau pure est formé sur la surface.
PCT/JP2022/043406 2021-12-23 2022-11-24 Procédé de nettoyage de plaquette semi-conductrice et procédé de production de plaquette semi-conductrice WO2023120016A1 (fr)

Applications Claiming Priority (2)

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JP2021-209928 2021-12-23
JP2021209928A JP2023094445A (ja) 2021-12-23 2021-12-23 半導体ウェーハの洗浄方法および半導体ウェーハの製造方法

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WO2023120016A1 true WO2023120016A1 (fr) 2023-06-29

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187519A (ja) * 2010-03-05 2011-09-22 Disco Corp ウエーハ洗浄装置のチャックテーブル
JP2015076558A (ja) * 2013-10-10 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2018056199A (ja) * 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2021057411A (ja) * 2019-09-27 2021-04-08 東京エレクトロン株式会社 基板処理方法および基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187519A (ja) * 2010-03-05 2011-09-22 Disco Corp ウエーハ洗浄装置のチャックテーブル
JP2015076558A (ja) * 2013-10-10 2015-04-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2018056199A (ja) * 2016-09-26 2018-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2021057411A (ja) * 2019-09-27 2021-04-08 東京エレクトロン株式会社 基板処理方法および基板処理装置

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JP2023094445A (ja) 2023-07-05
TW202333869A (zh) 2023-09-01

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