WO2023116683A1 - Photovoltaic module main grid structure, preparation method therefor and use thereof - Google Patents
Photovoltaic module main grid structure, preparation method therefor and use thereof Download PDFInfo
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- WO2023116683A1 WO2023116683A1 PCT/CN2022/140323 CN2022140323W WO2023116683A1 WO 2023116683 A1 WO2023116683 A1 WO 2023116683A1 CN 2022140323 W CN2022140323 W CN 2022140323W WO 2023116683 A1 WO2023116683 A1 WO 2023116683A1
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- pad
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- busbar
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000003466 welding Methods 0.000 claims abstract description 80
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims description 22
- 239000004332 silver Substances 0.000 claims description 22
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000005476 soldering Methods 0.000 claims description 11
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000011796 hollow space material Substances 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000005219 brazing Methods 0.000 claims description 2
- 230000001668 ameliorated effect Effects 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 22
- 238000012546 transfer Methods 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The present invention provides a photovoltaic module main grid structure, a preparation method therefor and a use thereof. The photovoltaic module main grid structure comprises a main grid and at least two pads arranged on the main grid at intervals, and the areas of the pads sequentially increase in a region from low temperature to high temperature. According to the present invention, by setting the areas of the pads in the main grid structure to be different, in the welding process, the problem of inconsistent welding tension caused by uneven heating of the pads is effectively ameliorated, and the welding tension of the battery is effectively improved.
Description
本发明属于光伏技术领域，涉及一种光伏组件主栅结构、其制备方法和用途。The invention belongs to the technical field of photovoltaics, and relates to a busbar structure of a photovoltaic module, its preparation method and application.
光伏组件由光伏电池通过焊带串联，形成电路，导出电流。电池片上一般印刷银，焊带焊接在银上，从而实现电流从银到焊带的传递。焊带与银的焊接主要是通过高温化锡，锡与银形成Ag
3Sn金属化合物层，从而提供焊接拉力。组件端管控焊接拉力一般通过管控焊带与银PAD(即焊盘)点的拉力。PAD点拉力起到固定焊带，保证产品可靠性的作用。
Photovoltaic modules are composed of photovoltaic cells connected in series through welding strips to form a circuit and derive current. Silver is generally printed on the battery sheet, and the ribbon is welded on the silver, so as to realize the transmission of current from the silver to the ribbon. The soldering of the ribbon and silver is mainly through high temperature tin, and tin and silver form an Ag 3 Sn metal compound layer, thereby providing welding tension. The component side controls the welding tension generally by controlling the tension between the solder ribbon and the silver PAD (that is, the pad). The tension at the PAD point plays a role in fixing the welding strip and ensuring the reliability of the product.
PAD点与焊带之间的拉力受三方面因素影响：1.银与电池的粘接力，2.Ag
3Sn自身的拉伸强度，3.焊带锡铅层中锡含量，其中因素2和因素3都是受温度影响。Ag
3Sn厚度生长是一个高温下锡往银中扩散的过程，相应的锡铅层中会留下富铅层，从而失去力学性能；Ag
3Sn厚度生长的同时，它的颗粒组织也会生长，变得长而脆，导致Ag
3Sn层拉升强度的下降。但温度过低，焊接时间不够，又会导致Ag
3Sn层生长不足，形成虚焊。一般Ag
3Sn层厚度在500nm～3um时具有良好的焊接拉力，在1um附近拉伸强度最高。
The tension between the PAD point and the solder strip is affected by three factors: 1. The adhesive force between silver and the battery, 2. The tensile strength of Ag 3 Sn itself, 3. The tin content in the tin-lead layer of the solder strip, among which factor 2 and factor 3 are affected by temperature. The thickness growth of Ag 3 Sn is a process in which tin diffuses into silver at high temperature, and a lead-rich layer will be left in the corresponding tin-lead layer, thus losing its mechanical properties; while the thickness of Ag 3 Sn grows, its granular structure will also grow , becoming long and brittle, resulting in a decrease in the tensile strength of the Ag 3 Sn layer. However, if the temperature is too low and the welding time is not enough, the growth of the Ag 3 Sn layer will be insufficient, resulting in a false weld. Generally, the Ag 3 Sn layer has good welding tension when the thickness is 500nm-3um, and the tensile strength is the highest near 1um.
焊带与PAD点的焊接，一般通过底板和灯管加热实现。温度的来源主要为电池下底板加热和灯光加热，银作为高反射材料，一般会将光反射。硅作为吸收源，可以很好的将光吸收，转换为热量，传递到银PAD点，热量再通过银PAD点传递至焊带。所以焊带化锡的热源是来自经银传导的硅片。焊接过程中，一般1片或多片电池一起焊接，靠近箱体边缘的电池边的PAD 点，由于对外散热通道短，所以温度相对较低；靠近焊接箱中间的电池边PAD点，由于散热通道较长，所以温度较高。这就导致了一根主栅上的电池片，存在温度梯度差，这个温度差会导致一条主栅上焊接拉力存在不均一的情况。焊接时，一般通过调节灯光强度及底板温度，使得中间PAD点达到最佳焊接拉力，而边缘PAD拉力较小。其中，位于烘箱外侧的PAD点，因为焊接温度低，Ag
3Sn化合物层相对较薄，是偏虚焊导致的拉力偏低；位于烘箱内侧的PAD点，因为焊接温度偏高，所以Ag
3Sn化合物层相对较厚，是偏过焊导致的拉力偏低。
The welding between the ribbon and the PAD point is generally realized by heating the bottom plate and the lamp tube. The main source of temperature is the heating of the bottom plate of the battery and the heating of the light. Silver, as a highly reflective material, generally reflects light. As an absorption source, silicon can absorb light well, convert it into heat, and transfer it to the silver PAD point, and then transfer the heat to the solder ribbon through the silver PAD point. Therefore, the heat source of solder strip tin is from the silicon wafer conducted by silver. During the welding process, generally one or more batteries are welded together. The PAD point on the battery side near the edge of the box has a relatively low temperature due to the short external heat dissipation channel; the PAD point on the battery side near the middle of the welding box, due to the heat dissipation channel Longer, so the temperature is higher. This leads to a temperature gradient difference between the cells on one main grid, and this temperature difference will lead to uneven welding tension on one main grid. During welding, generally by adjusting the light intensity and the temperature of the bottom plate, the middle PAD point can achieve the best welding tension, while the edge PAD tension is smaller. Among them, the PAD point located on the outside of the oven, because the welding temperature is low, the Ag 3 Sn compound layer is relatively thin, which is due to the low tensile force caused by partial welding; the PAD point located on the inside of the oven, because the welding temperature is high, so the Ag 3 Sn The compound layer is relatively thick, which is due to the low tensile force caused by over welding.
CN213242563U公开了一种电池片，其一侧设置有一个或多个相间隔的PAD点，所述电池片上还设置有多根相间隔的细栅、与所述PAD点数量对应的副主栅，所述PAD点设置于细栅长度方向的一侧，每一所述副主栅均与所有细栅连接，且每一副主栅一端与一对应的PAD点连接；如此设置，在电流传输时，细栅收集到的电流会传输到副主栅，再经由副主栅传输到对应的PAD点，从而电流的传输路径大大缩短，进而降低了电流的传输损耗，大大提升了电池片的转换效率；且因为如此，从而如果要传输到PAD点同样多的电流，相比同样大小的传统电池片，该实用新型电池片需要的细栅数量要少很多，从而该实用新型电池片的生产成本大大降低。CN213242563U discloses a battery sheet, one side of which is provided with one or more spaced PAD points, and the battery sheet is also provided with a plurality of spaced fine grids and sub-main grids corresponding to the number of the PAD points, The PAD point is set on one side of the length direction of the fine grid, each of the sub-main grids is connected to all the fine grids, and one end of each sub-main grid is connected to a corresponding PAD point; so set, when the current is transmitted , the current collected by the fine grid will be transmitted to the sub-main grid, and then transmitted to the corresponding PAD point through the sub-main grid, so that the current transmission path is greatly shortened, thereby reducing the current transmission loss and greatly improving the conversion efficiency of the cell ; and because of this, if the same amount of current is to be transmitted to the PAD point, compared with the traditional cell of the same size, the number of fine grids required by the utility model cell is much less, so that the production cost of the utility model cell is greatly reduce.
CN212874497U公开了一种新型电池片，其上设置有一组或多组电流收集传输装置，每一组所述电流收集传输装置均包括一PAD点、多条细栅，所述PAD点设置于电池片一侧，且PAD点上设置有银浆，所述多条细栅的一端均连接于所述PAD点；如此设置，该实用新型电池片无需设置主栅，即无需在相邻两PAD点之间设置连接两PAD点的银浆，如此，大大降低了银浆用量，即大大降低了生产成本；且在电流传输时，细栅收集到的电流能直接传输到PAD点上，从而大大减少了电流的传输路径，降低了电池片的串阻，从而大大提升了电池片的转化效率。CN212874497U discloses a new type of battery sheet, on which one or more groups of current collection and transmission devices are arranged, and each group of said current collection and transmission devices includes a PAD point and a plurality of fine grids, and the PAD points are arranged on the battery sheet One side, and the PAD point is provided with silver paste, and one end of the plurality of fine grids is connected to the PAD point; so set, the utility model battery sheet does not need to be provided with a main grid, that is, it does not need to be connected between two adjacent PAD points. The silver paste connecting the two PAD points is arranged between the two PAD points, so that the amount of silver paste is greatly reduced, that is, the production cost is greatly reduced; and when the current is transmitted, the current collected by the fine grid can be directly transmitted to the PAD point, thereby greatly reducing The current transmission path reduces the series resistance of the cell, thereby greatly improving the conversion efficiency of the cell.
在焊接过程中，如何保证电池主栅上不同PAD点的焊接拉力一致，成为目前迫切需要解决的问题。During the welding process, how to ensure that the welding tension of different PAD points on the battery main grid is consistent has become an urgent problem to be solved.
发明内容Contents of the invention
针对现有技术存在的不足，本发明的目的在于提供一种光伏组件主栅结构、其制备方法和用途，本发明通过设置主栅结构中焊盘的面积不同，在焊接过程中，有效改善焊盘受热不均引起的焊接拉力不一致的问题，有效提升电池焊接拉力。Aiming at the deficiencies in the prior art, the object of the present invention is to provide a photovoltaic module busbar structure, its preparation method and application. The present invention effectively improves the soldering process by setting the area of the pads in the busbar structure to be different during the welding process. The problem of inconsistent welding tension caused by uneven heating of the disc can effectively improve the welding tension of the battery.
为达此目的，本发明采用以下技术方案：For reaching this purpose, the present invention adopts following technical scheme:
第一方面，本发明提供了一种光伏组件主栅结构，所述光伏组件主栅结构包括主栅以及间隔设置于主栅上的至少两个焊盘，由温度低至高的方向，所述焊盘的面积依次增大。In a first aspect, the present invention provides a main grid structure of a photovoltaic module. The main grid structure of a photovoltaic module includes a main grid and at least two welding pads arranged on the main grid at intervals. The area of the disc increases sequentially.
本发明通过设置焊盘结构，沿主栅靠近焊接箱中心区域的方向，即由温度低至高的方向，焊盘的面积依次增大，从而调节热量流向焊带的距离，改变不同焊盘的温度，在焊接过程中，达到控制化锡温度的效果，抵消温度不均带来的影响，使得焊盘拉力趋向均一，达到提升电池焊接拉力的效果。In the present invention, by setting the pad structure, the area of the pad increases sequentially along the direction that the main grid is close to the central area of the welding box, that is, the direction from low temperature to high temperature, so as to adjust the distance of heat flow to the welding strip and change the temperature of different pads , In the welding process, the effect of controlling the temperature of the tin is achieved, offsetting the influence of uneven temperature, making the tension of the pad tend to be uniform, and achieving the effect of increasing the welding tension of the battery.
需要说明的是，本发明中温度不均造成的原因不做具体要求和特殊限定，例如可以是，焊接机压板引起的温度差异、烘箱防止位置引起的温度差异It should be noted that in the present invention, the cause of uneven temperature is not specifically required or limited, for example, it may be the temperature difference caused by the pressure plate of the welding machine or the temperature difference caused by the position of the oven.
需要说明的是，电池网版中大多采用长方形Pad点，垂直于主栅方向相对长些，平行主栅方向相对短些，故热量从短边方向传递至焊带相对容易。It should be noted that most of the battery screens use rectangular pad points, which are relatively long in the direction perpendicular to the main grid and relatively short in the direction parallel to the main grid, so it is relatively easy to transfer heat from the short side to the solder strip.
作为本发明的一个优选技术方案，所述焊盘上设置有镂空结构，所述镂空结构内的镂空图案间隔设置。As a preferred technical solution of the present invention, the pad is provided with a hollow structure, and the hollow patterns in the hollow structure are arranged at intervals.
本发明进一步地通过在焊盘上设置镂空结构，通过优化焊盘结构改变热传递途径，将热传递途径从二维面传递，改为一维线传递，进一步地调节焊 盘温度，使得焊接拉力趋于一致，从而提升电池焊接拉力。The present invention further adjusts the temperature of the pad by setting the hollow structure on the pad, changing the heat transfer path by optimizing the pad structure, changing the heat transfer path from a two-dimensional surface to a one-dimensional line transfer, and further adjusting the temperature of the pad so that the welding tension Tend to be consistent, thereby improving the battery welding tension.
优选地，所述镂空结构包括线状镂空、圆形镂空或网格状镂空中的一种或至少两种的组合。Preferably, the hollow structure includes one or a combination of at least two of linear hollows, circular hollows or grid-shaped hollows.
作为本发明的一个优选技术方案，所述镂空结构为线状镂空，由温度低至高的方向，所述焊盘上线状镂空与主栅的角度依次增大。As a preferred technical solution of the present invention, the hollow structure is a linear hollow, and the angle between the linear hollow on the pad and the main grid increases sequentially in the direction from low temperature to high temperature.
本发明进一步地通过调整线状镂空与主栅的角度，改变热传输途径，均衡焊盘的温度。The present invention further adjusts the angle between the linear hollow and the main grid to change the heat transfer path and balance the temperature of the pad.
优选地，所述线状镂空与主栅的角度为0°～90°，例如为0°、10°、20°、30°、40°、50°、60°、70°、80°或90°。Preferably, the angle between the linear hollow and the main grid is 0°-90°, such as 0°, 10°, 20°, 30°, 40°, 50°, 60°, 70°, 80° or 90° °.
作为本发明的一个优选技术方案，位于焊接箱中心的焊盘，所述线状镂空与主栅的角度为90°。As a preferred technical solution of the present invention, for the pad located at the center of the solder box, the angle between the linear hollow and the main grid is 90°.
优选地，位于焊接箱边缘的焊盘，所述线状镂空与主栅的角度为0°。Preferably, for the pad located at the edge of the solder box, the angle between the linear hollow and the main grid is 0°.
作为本发明的一个优选技术方案，由温度低至高的方向，所述焊盘上镂空结构的镂空间隔依次减小。As a preferred technical solution of the present invention, from the direction of low temperature to high temperature, the hollow space of the hollow structure on the pad decreases sequentially.
优选地，所述镂空结构的镂空图案宽度为30μm～100μm，例如为30μm、40μm、50μm、60μm、70μm、80μm、90μm或100μm。Preferably, the width of the hollow pattern of the hollow structure is 30 μm˜100 μm, such as 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm.
优选地，所述镂空间隔的距离为30μm～350μm，例如为30μm、60μm、90μm、120μm、150μm、180μm、210μm、240μm、270μm、300μm、330μm或350μm。所述镂空间隔宽度即相邻两个镂空图案之间的距离，以银焊盘的线性镂空为例，即银线的宽度即镂空间隔宽度。Preferably, the distance between the hollow spaces is 30 μm˜350 μm, for example, 30 μm, 60 μm, 90 μm, 120 μm, 150 μm, 180 μm, 210 μm, 240 μm, 270 μm, 300 μm, 330 μm or 350 μm. The width of the hollow space is the distance between two adjacent hollow patterns, taking the linear hollow of the silver pad as an example, that is, the width of the silver line is the width of the hollow space.
作为本发明的一个优选技术方案，所述焊盘上设置有焊带。As a preferred technical solution of the present invention, a welding strip is arranged on the pad.
优选地，所述焊盘与焊带之间设置有焊接层。Preferably, a solder layer is provided between the pad and the solder strip.
优选地，所述焊接层包括层叠设置的锡铅层和Ag
3Sn层，所述Ag
3Sn层靠近焊盘一侧。
Preferably, the soldering layer includes a stacked tin-lead layer and an Ag 3 Sn layer, and the Ag 3 Sn layer is close to the side of the pad.
本发明中Ag
3Sn层是由锡铅层与银质焊盘焊接过程中生成，保证焊接 的拉力。
In the present invention, the Ag 3 Sn layer is formed during the welding process of the tin-lead layer and the silver pad, so as to ensure the pulling force of welding.
优选地，所述焊带包括铜焊带。Preferably, the solder ribbon comprises a brazed ribbon.
优选地，所述焊盘的材质为银。Preferably, the pad is made of silver.
第二方面，本发明提供了一种第一方面所述的光伏组件主栅结构的制备方法，所述制备方法包括：In a second aspect, the present invention provides a method for preparing the busbar structure of a photovoltaic module described in the first aspect, the preparation method comprising:
在光伏组件的基底上设置主栅，并由温度低至高的方向，在主栅上设置面积依次增大的焊盘，制备得到所述的光伏组件主栅结构。A busbar is arranged on the substrate of the photovoltaic module, and pads with increasing areas are arranged on the busbar in the direction from low temperature to high temperature, so as to prepare the photovoltaic module busbar structure.
作为本发明的一个优选技术方案，所述制备方法具体包括以下步骤：As a preferred technical solution of the present invention, the preparation method specifically includes the following steps:
在光伏组件的基底上印刷主栅，将设置有主栅的基底放于加热台上，并依次将焊接层设置于焊盘上，在灯光加热下进行焊接后，制备得到所述的光伏组件主栅结构。Print the busbar on the substrate of the photovoltaic module, put the substrate provided with the busbar on the heating table, and arrange the welding layer on the welding pad in turn, and after welding under the heating of the light, the main photovoltaic module is prepared. grid structure.
作为本发明的一个优选技术方案，所述加热台的加热温度为25℃～100℃，例如为25℃、30℃、40℃、50℃、60℃、70℃、80℃、90℃或100℃。As a preferred technical solution of the present invention, the heating temperature of the heating stage is 25°C to 100°C, such as 25°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C, 90°C or 100°C ℃.
需要说明的是，灯光加热过程中采用灯管发出加热光进行照射加热。It should be noted that in the process of lamp heating, lamp tubes are used to emit heating light for irradiation and heating.
第三方面，本发明提供了一种光伏组件，所述的光伏组件包括基底和栅线，所述栅线中主栅线采用第一方面所述的光伏组件主栅结构。In a third aspect, the present invention provides a photovoltaic module, wherein the photovoltaic module includes a substrate and grid lines, and the main grid lines in the grid lines adopt the photovoltaic module main grid structure described in the first aspect.
本发明所述的数值范围不仅包括上述例举的点值，还包括没有例举出的上述数值范围之间的任意的点值，限于篇幅及出于简明的考虑，本发明不再穷尽列举所述范围包括的具体点值。The numerical ranges described in the present invention not only include the above-mentioned point values, but also include any point values between the above-mentioned numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention will not exhaustively list the above-mentioned point values. Specific point values covered by the stated ranges.
与现有技术相比，本发明的有益效果为：Compared with prior art, the beneficial effect of the present invention is:
本发明通过设置焊盘结构，沿主栅靠近焊接箱中心区域的方向，即由温度低至高的方向，焊盘的面积依次增大，从而调节热量流向焊带的距离，改变不同焊盘的温度，在焊接过程中，达到控制化锡温度的效果，抵消温度不均带来的影响，使得焊盘拉力趋向均一，达到提升电池焊接拉力的效果。In the present invention, by setting the pad structure, the area of the pad increases sequentially along the direction that the main grid is close to the central area of the welding box, that is, the direction from low temperature to high temperature, so as to adjust the distance of heat flow to the welding strip and change the temperature of different pads , In the welding process, the effect of controlling the temperature of the tin is achieved, offsetting the influence of uneven temperature, making the tension of the pad tend to be uniform, and achieving the effect of increasing the welding tension of the battery.
图1为本发明实施例1-4中提供的光伏组件主栅结构的示意图，其中Ⅰ代表的是实施例1的光伏组件主栅结构，Ⅱ代表的是实施例2的光伏组件主栅结构，Ⅲ代表的是实施例3的光伏组件主栅结构，Ⅳ代表的是实施例4的光伏组件主栅结构；Fig. 1 is a schematic diagram of the main grid structure of the photovoltaic module provided in the embodiment 1-4 of the present invention, wherein I represents the main grid structure of the photovoltaic module in embodiment 1, and II represents the main grid structure of the photovoltaic module in embodiment 2, III represents the busbar structure of the photovoltaic module in Example 3, and IV represents the busbar structure of the photovoltaic module in Example 4;
图2为本发明一个具体实施方式中提供的镂空结构示意图，其中a、b和c分别代表横向线状镂空、纵向线状镂空和斜向线状镂空，d代表的是网格镂空，e代表的是圆形镂空；Fig. 2 is a schematic diagram of the hollow structure provided in a specific embodiment of the present invention, wherein a, b and c respectively represent horizontal linear hollow, longitudinal linear hollow and oblique linear hollow, d represents grid hollow, and e represents is a circular hollow;
图3为本发明一个具体实施方式中提供的光伏组件主栅结构的制备工艺示意图；Fig. 3 is a schematic diagram of the preparation process of the busbar structure of the photovoltaic module provided in a specific embodiment of the present invention;
附图标记说明：Explanation of reference signs:
1-基底；2-焊盘；3-Ag
3Sn层；4-锡铅层；5-焊带；6-加热台；7-灯管；8-加热光；9-主栅。
1-substrate; 2-pad; 3-Ag 3 Sn layer; 4-tin-lead layer;
需要理解的是，在本发明的描述中，术语“中心”、“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”等仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”等的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的 含义是两个或两个以上。It should be understood that in the description of the present invention, the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and should not be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, a feature defined as "first", "second", etc. may expressly or implicitly include one or more of that feature. In the description of the present invention, unless otherwise stated, "plurality" means two or more.
需要说明的是，在本发明的描述中，除非另有明确的规定和限定，术语“设置”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以通过具体情况理解上述术语在本发明中的具体含义。It should be noted that, in the description of the present invention, unless otherwise clearly stipulated and limited, the terms "set", "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connection, or integral connection; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary, and it can be the internal communication of two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention based on specific situations.
下面通过具体实施方式来进一步说明本发明的技术方案。The technical solutions of the present invention will be further described below through specific embodiments.
在一个具体实施方式中，本发明提供了一种光伏组件主栅结构，所述光伏组件主栅结构包括主栅9以及间隔设置于主栅9上的至少两个焊盘2，由温度低至高的区域，所述焊盘2面积依次增大。In a specific embodiment, the present invention provides a main grid structure of a photovoltaic module. The main grid structure of a photovoltaic module includes a main grid 9 and at least two pads 2 arranged at intervals on the main grid 9 . The temperature ranges from low to high. area, the area of the pad 2 increases sequentially.
本发明通过设置焊盘2结构，沿主栅9靠近焊接箱中心区域的方向，即由温度低至高的区域，焊盘2面积依次增大，从而调节热量流向焊带5的距离，改变不同焊盘2的温度，在焊接过程中，达到控制化锡温度的效果，抵消温度不均带来的影响，使得焊盘2拉力趋向均一，达到提升电池焊接拉力的效果。In the present invention, by setting the structure of the pad 2, the area of the pad 2 increases sequentially along the direction of the main grid 9 close to the central area of the welding box, that is, from the low temperature to the high temperature area, thereby adjusting the distance of heat flow to the welding strip 5 and changing the distance between different welding During the welding process, the temperature of the pad 2 can control the temperature of the tin, offset the influence of temperature unevenness, make the tension of the pad 2 tend to be uniform, and achieve the effect of increasing the welding tension of the battery.
具体地，焊盘2上设置有镂空结构，镂空结构内的镂空图案间隔设置。本发明进一步地通过在焊盘2上设置镂空结构，通过优化焊盘2结构改变热传递途径，将热传递途径从二维面传递，改为一维线传递，进一步地调节焊盘2温度，使得焊接拉力趋于一致，从而提升电池焊接拉力。Specifically, the pad 2 is provided with a hollow structure, and the hollow patterns in the hollow structure are arranged at intervals. The present invention further adjusts the temperature of the pad 2 by setting a hollow structure on the pad 2, changing the heat transfer path by optimizing the structure of the pad 2, and changing the heat transfer path from a two-dimensional surface to a one-dimensional line transfer. Make the welding tension tend to be consistent, thereby improving the battery welding tension.
进一步地，如图2所示，镂空结构包括线状镂空、圆形镂空或网格状镂空中的一种或至少两种的组合。Further, as shown in FIG. 2 , the hollow structure includes one or a combination of at least two of linear hollows, circular hollows or grid-shaped hollows.
更进一步地，镂空结构为线状镂空，沿主栅9靠近焊接箱中心区域的方向，即由温度低至高的方向，焊盘2上线状镂空与主栅9的角度依次增大，线状镂空与主栅9的角度为0°～90°。其中，位于焊接箱中心的焊盘2，线 状镂空与主栅9的角度为90°，即横向线状镂空，位于焊接箱边缘的焊盘2，线状镂空与主栅9的角度为0°，即纵向线状镂空，此外，线状镂空与主栅9的角度处于0°～90°之间时，为斜向线状镂空。本发明进一步地通过调整线状镂空与主栅9的角度，改变热传输途径，均衡焊盘2的温度。Furthermore, the hollow structure is a linear hollow. Along the direction that the main grid 9 is close to the central area of the welding box, that is, the direction from low temperature to high temperature, the angle between the linear hollow on the pad 2 and the main grid 9 increases sequentially, and the linear hollow The angle with the main grid 9 is 0°-90°. Among them, pad 2 located in the center of the welding box, the angle between the linear hollow and the main grid 9 is 90°, that is, the horizontal linear hollow, and the pad 2 located on the edge of the welding box, the angle between the linear hollow and the main grid 9 is 0° °, that is, a longitudinal linear hollow. In addition, when the angle between the linear hollow and the main grid 9 is between 0° and 90°, it is an oblique linear hollow. The present invention further adjusts the angle between the linear hollow and the main grid 9 to change the heat transfer path and balance the temperature of the pad 2 .
具体地，由温度低至高的方向，焊盘2上镂空结构的镂空间隔依次减小。进一步地，镂空间隔的距离为30μm～350μm，镂空图案的宽度(例如银线宽度)为30μm～100μm。Specifically, from the direction of low temperature to high temperature, the space between the hollow structures on the pad 2 decreases sequentially. Further, the distance of the hollow space is 30 μm˜350 μm, and the width of the hollow pattern (eg silver line width) is 30 μm˜100 μm.
具体地，焊盘2上设置有焊带5。焊盘2与焊带5之间设置有焊接层。焊接层包括层叠设置的锡铅层4和Ag
3Sn层3，所述Ag
3Sn层3靠近焊盘2一侧。焊带5包括铜焊带5，焊盘2的材质为银。本发明中Ag
3Sn层3是由锡铅层4与银质焊盘2焊接过程中生成，保证焊接的拉力。
Specifically, a solder ribbon 5 is provided on the pad 2 . A solder layer is provided between the pad 2 and the solder ribbon 5 . The soldering layer includes a stacked tin-lead layer 4 and an Ag 3 Sn layer 3 , and the Ag 3 Sn layer 3 is close to the side of the pad 2 . The welding ribbon 5 includes a brazing ribbon 5, and the material of the welding pad 2 is silver. In the present invention, the Ag 3 Sn layer 3 is formed during the welding process of the tin-lead layer 4 and the silver pad 2 , so as to ensure the pulling force of welding.
在另一个具体实施方式中，本发明提供了一种上述的光伏组件主栅结构的制备方法，如图3所示，所述制备方法具体包括以下步骤：In another specific embodiment, the present invention provides a method for preparing the busbar structure of the above-mentioned photovoltaic module. As shown in FIG. 3, the preparation method specifically includes the following steps:
在光伏组件的基底1上印刷主栅9，将设置有主栅9的基底1放于25℃～100℃的加热台6上，并依次将焊接层设置于焊盘2上，灯光加热下进行焊接后，制备得到所述的光伏组件主栅结构。其中，灯光加热过程中采用灯管7发出加热光8进行照射加热。Print the busbar 9 on the substrate 1 of the photovoltaic module, place the substrate 1 with the busbar 9 on a heating table 6 at 25°C to 100°C, and place the soldering layer on the pad 2 in sequence, and heat it under the light. After welding, the busbar structure of the photovoltaic module is prepared. Wherein, the lamp tube 7 is used to emit the heating light 8 to irradiate and heat during the lamp heating process.
本发明还提供了一种光伏组件，所述的光伏组件包括基底1和栅线，所述栅线中主栅9线采用上述的光伏组件主栅结构。The present invention also provides a photovoltaic module. The photovoltaic module includes a substrate 1 and grid lines, and the busbar 9 of the grid lines adopts the above-mentioned busbar structure of the photovoltaic module.
实施例1Example 1
本实施例提供了一种光伏组件主栅结构，基于一个具体实施方式，如图1中的Ⅰ所示，沿主栅9靠近焊接箱中心区域的方向，焊盘2面积依次增大。This embodiment provides a busbar structure of a photovoltaic module. Based on a specific implementation method, as shown by I in FIG. 1 , the area of the pads 2 increases sequentially along the direction that the busbar 9 approaches the central area of the welding box.
实施例2Example 2
本实施例提供了一种光伏组件主栅结构，与实施例1相比，如图1中的Ⅱ所示，沿主栅9靠近焊接箱中心区域的方向，焊盘2面积依次增大，且在 焊盘2上设置线状镂空，并且分为4个纵向线状镂空和5个横向线状镂空。This embodiment provides a photovoltaic module busbar structure. Compared with Example 1, as shown in II in FIG. 1, along the direction that the busbar 9 is close to the central area of the welding box, the area of the pad 2 increases sequentially, and A linear hollow is provided on the pad 2, and is divided into 4 vertical linear hollows and 5 horizontal linear hollows.
实施例3Example 3
本实施例提供了一种光伏组件主栅结构，与实施例1相比，如图1中的Ⅲ所示，沿主栅9靠近焊接箱中心区域的方向，焊盘2面积依次增大，且在焊盘2上设置线状镂空，并且分为3个纵向线状镂空、3个斜向线状镂空和3个横向线状镂空。This embodiment provides a photovoltaic module busbar structure. Compared with Example 1, as shown in III in FIG. 1, the area of the pad 2 increases sequentially along the direction that the busbar 9 is close to the central area of the welding box, and A linear hollow is provided on the pad 2, and is divided into 3 vertical linear hollows, 3 oblique linear hollows and 3 horizontal linear hollows.
实施例4Example 4
本实施例提供了一种光伏组件主栅结构，与实施例1相比，如图1中的Ⅳ所示，沿主栅9靠近焊接箱中心区域的方向，焊盘2面积依次增大，且在焊盘2上设置线状镂空，并且分为4个纵向线状镂空和5个横向线状镂空。This embodiment provides a photovoltaic module busbar structure. Compared with Example 1, as shown in IV in FIG. 1, along the direction that the busbar 9 is close to the central area of the welding box, the area of the pad 2 increases sequentially, and A linear hollow is provided on the pad 2, and is divided into 4 vertical linear hollows and 5 horizontal linear hollows.
对比例1Comparative example 1
本对比例提供了一种光伏组件主栅结构，与实施例1相比，其区别在于，各个焊盘2的结构和面积相同。This comparative example provides a busbar structure of a photovoltaic module. Compared with Embodiment 1, the difference lies in that the structure and area of each pad 2 are the same.
对实施例1、2和对比例1制备的焊盘2的焊接拉力进行测试，如图1所示，Ⅰ和Ⅱ的焊盘由上至下分别为1号、2号……9号，测试结果如表1所示。Test the welding tension of the pads 2 prepared in Examples 1, 2 and Comparative Example 1. As shown in Figure 1, the pads of I and II are respectively No. 1, No. 2... No. 9 from top to bottom. The results are shown in Table 1.
表1Table 1
通过表1可以看出，实施例1的焊接拉力测试结果明显优于对比例1，实施例2中能够看出，虽然由于镂空结构使得焊接拉力降低，但整体拉力分布差异较对比例1变小，即提高了焊盘上拉力一致性；对比例1中，部分焊盘靠近焊箱边缘，部分焊盘靠近焊箱内部，所以焊盘温度存在差异，串焊时 容易存在偏过焊与偏虚焊的情况，其中，靠近烘箱外围的焊盘，因为焊接温度低，Ag
3Sn层3生长不充分，导致拉力偏低；靠近烘箱中间的焊盘，因为焊接温度偏高，Ag
3Sn层3生长较厚，导致焊接拉力偏低。由此可以看出，本发明通过设置焊盘2结构，沿主栅9靠近焊接箱中心区域的方向，焊盘2面积依次增大，从而调节热量流向焊带5的距离，改变不同焊盘2的温度，在焊接过程中，达到控制化锡温度的效果，抵消温度不均带来的影响，使得焊盘2拉力趋向均一，达到提升电池焊接拉力的效果。
It can be seen from Table 1 that the welding tensile test result of Example 1 is significantly better than that of Comparative Example 1. It can be seen in Example 2 that although the welding tensile force is reduced due to the hollow structure, the difference in the overall tensile force distribution is smaller than that of Comparative Example 1. , which improves the consistency of the tension on the pads; in Comparative Example 1, some pads are close to the edge of the soldering box, and some pads are close to the inside of the soldering box, so there are differences in the temperature of the pads, and it is easy to have over-welding and partial virtualization during serial welding In the case of soldering, the pads near the periphery of the oven, because the soldering temperature is low, the growth of the Ag 3 Sn layer 3 is insufficient, resulting in low tensile force; the pads near the middle of the oven, because the soldering temperature is high, the Ag 3 Sn layer 3 The growth is thicker, resulting in a lower weld pull. It can be seen that, by setting the pad 2 structure in the present invention, the area of the pad 2 increases sequentially along the direction of the main grid 9 approaching the central area of the welding box, thereby adjusting the distance of heat flow to the welding ribbon 5 and changing the distance between different pads 2 During the welding process, the effect of controlling the temperature of the tin is achieved, offsetting the influence of uneven temperature, making the tension of the pad 2 tend to be uniform, and achieving the effect of increasing the welding tension of the battery.
申请人声明，以上所述仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，所属技术领域的技术人员应该明了，任何属于本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，均落在本发明的保护范围和公开范围之内。The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto, and those skilled in the art should understand that any person skilled in the art should be aware of any disclosure in the present invention Within the technical scope, easily conceivable changes or substitutions all fall within the scope of protection and disclosure of the present invention.
Claims (10)
- 一种光伏组件主栅结构，其特征在于，所述光伏组件主栅结构包括主栅以及间隔设置于主栅上的至少两个焊盘，由温度低至高的区域，所述焊盘的面积依次增大。A main grid structure of a photovoltaic module, characterized in that the main grid structure of the photovoltaic module includes a main grid and at least two welding pads arranged at intervals on the main grid, and the areas of the welding pads are in order from low temperature to high temperature. increase.
- 根据权利要求1所述的光伏组件主栅结构，其特征在于，所述焊盘上设置有镂空结构，所述镂空结构内的镂空图案间隔设置；The busbar structure of a photovoltaic module according to claim 1, wherein a hollow structure is arranged on the pad, and the hollow patterns in the hollow structure are arranged at intervals;所述镂空结构包括线状镂空、圆形镂空或网格状镂空中的一种或至少两种的组合。The hollow structure includes one or a combination of at least two of linear hollows, circular hollows or grid-shaped hollows.
- 根据权利要求2所述的光伏组件主栅结构，其特征在于，所述镂空结构为线状镂空，由温度低至高的方向，所述焊盘上线状镂空与主栅的角度依次增大；The busbar structure of a photovoltaic module according to claim 2, wherein the hollow structure is a linear hollow, and the angle between the linear hollow on the pad and the busbar increases sequentially from the direction of low temperature to high temperature;所述线状镂空与主栅的角度为0°～90°。The angle between the linear hollow and the main grid is 0°-90°.
- 根据权利要求2或3所述的光伏组件主栅结构，其特征在于，位于焊接箱中心的焊盘，所述线状镂空与主栅的角度为90°；The photovoltaic module main grid structure according to claim 2 or 3, characterized in that, for the pad located in the center of the welding box, the angle between the linear hollow and the main grid is 90°;位于焊接箱边缘的焊盘，所述线状镂空与主栅的角度为0°。For the pad located at the edge of the solder box, the angle between the linear hollow and the main grid is 0°.
- 根据权利要求2-4任一项所述的光伏组件主栅结构，其特征在于，由温度低至高的方向，所述焊盘上镂空结构的镂空间隔依次减小；According to the busbar structure of any one of claims 2-4, it is characterized in that, from the direction of low temperature to high temperature, the hollow space of the hollow structure on the pad decreases successively;所述镂空结构的镂空图案宽度为30μm～100μm；The width of the hollow pattern of the hollow structure is 30 μm to 100 μm;所述镂空间隔的距离为30μm～350μm。The distance between the hollow spaces is 30 μm˜350 μm.
- 根据权利要求1所述的光伏组件主栅结构，其特征在于，所述焊盘上设置有焊带；The busbar structure of a photovoltaic module according to claim 1, wherein a welding strip is arranged on the pad;所述焊盘与焊带之间设置有焊接层；A welding layer is arranged between the pad and the welding strip;所述焊接层包括层叠设置的锡铅层和Ag 3Sn层，所述Ag 3Sn层靠近焊盘一侧； The soldering layer includes a stacked tin-lead layer and an Ag 3 Sn layer, and the Ag 3 Sn layer is close to the side of the pad;所述焊带包括铜焊带；The welding ribbon comprises a brazing ribbon;所述焊盘的材质为银。The pad is made of silver.
- 一种权利要求1-6任一项所述的光伏组件主栅结构的制备方法，其特征在于，所述制备方法包括：A method for preparing the busbar structure of a photovoltaic module according to any one of claims 1-6, characterized in that the preparation method comprises:在光伏组件的基底上设置主栅，并由温度低至高的方向，在主栅上设置面积依次增大的焊盘，制备得到所述的光伏组件主栅结构。A busbar is arranged on the substrate of the photovoltaic module, and pads with increasing areas are arranged on the busbar in the direction from low temperature to high temperature, so as to prepare the photovoltaic module busbar structure.
- 根据权利要求7所述的制备方法，其特征在于，所述制备方法具体包括以下步骤：The preparation method according to claim 7, wherein the preparation method specifically comprises the following steps:在光伏组件的基底上印刷主栅，将设置有主栅的基底放于加热台上，并依次将焊接层设置于焊盘上，在灯光加热下进行焊接后，制备得到所述的光伏组件主栅结构。Print the busbar on the substrate of the photovoltaic module, put the substrate provided with the busbar on the heating table, and arrange the welding layer on the welding pad in turn, and after welding under the heating of the light, the main photovoltaic module is prepared. grid structure.
- 根据权利要求8所述的制备方法，其特征在于，所述加热台的加热温度为25℃～100℃。The preparation method according to claim 8, characterized in that, the heating temperature of the heating stage is 25°C-100°C.
- 一种光伏组件，其特征在于，所述的光伏组件包括基底和栅线，所述栅线中主栅线采用权利要求1-6任一项所述的光伏组件主栅结构。A photovoltaic module, characterized in that the photovoltaic module comprises a substrate and grid lines, and the busbar of the grid lines adopts the busbar structure of the photovoltaic module according to any one of claims 1-6.
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| CN110148641A (en) * | 2019-06-19 | 2019-08-20 | 晶科能源有限公司 | A kind of solar battery and preparation method thereof, a kind of photovoltaic module |
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| CN110148641A (en) * | 2019-06-19 | 2019-08-20 | 晶科能源有限公司 | A kind of solar battery and preparation method thereof, a kind of photovoltaic module |
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| CN214043680U (en) * | 2020-09-30 | 2021-08-24 | 无锡尚德太阳能电力有限公司 | Front grid line structure |
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