CN114566555A - Main grid structure of photovoltaic module, preparation method and application thereof - Google Patents
Main grid structure of photovoltaic module, preparation method and application thereof Download PDFInfo
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- CN114566555A CN114566555A CN202111565727.0A CN202111565727A CN114566555A CN 114566555 A CN114566555 A CN 114566555A CN 202111565727 A CN202111565727 A CN 202111565727A CN 114566555 A CN114566555 A CN 114566555A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000003466 welding Methods 0.000 claims abstract description 68
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 16
- 229910000679 solder Inorganic materials 0.000 claims description 25
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 12
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910017692 Ag3Sn Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention provides a photovoltaic module main grid structure, a preparation method and application thereof. According to the invention, by setting different areas of the bonding pads in the main grid structure, the problem of inconsistent welding tension caused by nonuniform heating of the bonding pads is effectively solved in the welding process, and the welding tension of the battery is effectively improved.
Description
Technical Field
The invention belongs to the technical field and relates to a main grid structure of a photovoltaic module, a preparation method and application thereof.
Background
The photovoltaic module is formed by connecting photovoltaic cells in series through solder strips to form a circuit and lead out current. The battery plate is generally printed with silver, and the solder strip is soldered on the silver, so that the current is transmitted from the silver to the solder strip. Soldering of solder ribbon to silverMainly by high temperature of tin, tin and silver to form Ag3Sn metal compound layer, thereby providing a soldering pull force. The component-side managed solder pull is generally done by managing the pull of the solder ribbon and the silver PAD (i.e., PAD) points. The PAD point pulling force plays the fixed solder strip, guarantees the effect of product reliability.
The tension between the PAD point and the solder strip is affected by three factors: 1. adhesion of silver to the cell, 2.Ag3Sn tensile strength itself, 3. tin content in tin-lead layer of solder strip, wherein factor 2 and factor 3 are both affected by temperature. Ag3The Sn thickness growth is a process of diffusing tin into silver at high temperature, and a lead-rich layer is left in a corresponding tin-lead layer, so that the mechanical property is lost; ag3While Sn grows in thickness, its grain structure grows, becomes long and brittle, and leads to Ag3The tensile strength of the Sn layer is reduced. However, the temperature is too low, the welding time is not enough, and Ag is caused3The Sn layer grows insufficiently to form a cold joint. General Ag3The thickness of the Sn layer is 500 nm-3 um, the welding tension is good, and the tensile strength is highest near 1 um.
The welding of the solder strip and the PAD point is generally realized by heating the bottom plate and the lamp tube. The temperature sources are mainly heating of the bottom plate of the battery and light heating, and silver is used as a high-reflection material and generally reflects light. Silicon is used as an absorption source, light can be well absorbed and converted into heat which is transmitted to the silver PAD point, and the heat is transmitted to the solder strip through the silver PAD point. The heat source for solder taping the tin is from a silver-conductive silicon wafer. In the welding process, 1 or more batteries are generally welded together, and the PAD point of the battery side close to the edge of the box body is relatively low in temperature due to the fact that an external heat dissipation channel is short; the PAD point at the battery side close to the middle of the welding box has higher temperature due to longer heat dissipation channel. This results in a difference in temperature gradient across the cells on a main grid, which can lead to non-uniform welding tension across a main grid. During welding, the light intensity and the temperature of the base plate are generally adjusted, so that the middle PAD point achieves the optimal welding tension, and the edge PAD tension is smaller. Wherein, the PAD point is positioned at the outer side of the oven, because of the low welding temperature, Ag3The Sn compound layer is relatively thin and is biasedThe tension caused by cold joint is low; the PAD point on the inner side of the oven is Ag3 because of the higher welding temperatureSThe n-compound layer is relatively thick and is biased to a low tension due to over-soldering.
CN213242563U discloses a battery piece, one side of which is provided with one or more PAD points at intervals, the battery piece is further provided with a plurality of fine grids at intervals and auxiliary main grids corresponding to the PAD points in number, the PAD points are arranged on one side of the fine grids in the length direction, each auxiliary main grid is connected with all the fine grids, and one end of each auxiliary main grid is connected with a corresponding PAD point; with the arrangement, when the current is transmitted, the current collected by the fine grid is transmitted to the auxiliary main grid and then transmitted to the corresponding PAD point through the auxiliary main grid, so that the transmission path of the current is greatly shortened, the transmission loss of the current is reduced, and the conversion efficiency of the battery piece is greatly improved; and because so to if will transmit PAD point as much electric current, compare the traditional battery piece of the same size, the thin bars quantity that this utility model battery piece needs will be a lot of less, thereby this utility model battery piece's manufacturing cost greatly reduced.
CN212874497U discloses a novel battery piece, on which one or more sets of current collecting and transmitting devices are arranged, each set of current collecting and transmitting device includes a PAD point and a plurality of fine grids, the PAD point is arranged on one side of the battery piece, silver paste is arranged on the PAD point, and one ends of the plurality of fine grids are connected to the PAD point; according to the arrangement, the main grid is not required to be arranged on the battery piece, namely, silver paste for connecting two PAD points is not required to be arranged between two adjacent PAD points, so that the using amount of the silver paste is greatly reduced, and the production cost is greatly reduced; and when the current is transmitted, the current collected by the fine grid can be directly transmitted to the PAD point, so that the current transmission path is greatly reduced, the series resistance of the battery piece is reduced, and the conversion efficiency of the battery piece is greatly improved.
In the welding process, how to ensure the consistency of the welding tension of different PAD points on the main grid of the battery becomes a problem to be solved urgently at present.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a main grid structure of a photovoltaic module, a preparation method and application thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the invention provides a main grid structure of a photovoltaic module, the main grid structure of the photovoltaic module comprises a main grid and at least two bonding pads arranged on the main grid at intervals, and the areas of the bonding pads are sequentially increased from low temperature to high temperature.
According to the invention, by arranging the pad structure, the area of the pad is sequentially increased along the direction that the main grid is close to the central area of the welding box, namely the direction with low temperature to high temperature, so that the distance of heat flowing to the welding strip is adjusted, the temperature of different pads is changed, the effect of controlling tin melting temperature is achieved in the welding process, the influence caused by uneven temperature is counteracted, the tension of the pad tends to be uniform, and the effect of improving the welding tension of the battery is achieved.
It should be noted that the reason for the temperature unevenness in the present invention is not particularly limited and is not specifically limited, and may be, for example, a temperature difference caused by a bonding machine platen or a temperature difference caused by an oven prevention position
It should be noted that, the battery halftone is mostly provided with rectangular Pad points, which are relatively long in the direction perpendicular to the main grid and relatively short in the direction parallel to the main grid, so that heat is relatively easily transferred from the short side direction to the solder strip.
As a preferred technical scheme of the invention, the pad is provided with hollow structures, and hollow patterns in the hollow structures are arranged at intervals.
The invention further arranges the hollow structure on the bonding pad, changes the heat transfer path from a two-dimensional surface to a one-dimensional linear transfer by optimizing the heat transfer path of the bonding pad structure, and further adjusts the temperature of the bonding pad to enable the welding tension to be consistent, thereby improving the welding tension of the battery.
Preferably, the hollow structure comprises one or a combination of at least two of linear hollow, circular hollow and grid hollow.
As a preferred technical scheme of the invention, the hollowed-out structure is linear hollowed-out, and the angles of the linear hollowed-out structure and the main gate on the bonding pad are sequentially increased from low temperature to high temperature.
The invention further changes the heat transmission path and balances the temperature of the bonding pad by adjusting the angles of the linear hollow parts and the main grid.
Preferably, the angle between the linear hollow and the main grid is 0-90 degrees, such as 0 degree, 10 degree, 20 degree, 30 degree, 40 degree, 50 degree, 60 degree, 70 degree, 80 degree or 90 degree.
As a preferable technical scheme of the invention, the angle between the linear hollow and the main grid of the bonding pad positioned in the center of the bonding box is 90 degrees.
Preferably, the angle between the linear hollow and the main grid is 0 degree.
As a preferred technical scheme of the invention, from the direction of low temperature to high temperature, the hollow intervals of the hollow structures on the bonding pad are sequentially reduced.
Preferably, the width of the hollow pattern of the hollow structure is 30-100 μm, such as 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm or 100 μm.
Preferably, the distance between the hollows is 30-350 μm, such as 30 μm, 60 μm, 90 μm, 120 μm, 150 μm, 180 μm, 210 μm, 240 μm, 270 μm, 300 μm, 330 μm or 350 μm. The hollowed-out interval width is the distance between two adjacent hollowed-out patterns, and taking the linear hollowed-out of the silver pad as an example, the width of the silver wire is the hollowed-out interval width.
As a preferred technical solution of the present invention, a solder strip is disposed on the pad.
Preferably, a welding layer is arranged between the welding pad and the welding strip.
Preferably, the soldering layer comprises a tin-lead layer and Ag arranged in a stacked manner3Sn layer of said Ag3And the Sn layer is close to one side of the bonding pad.
Ag in the invention3The Sn layer is made of Sn-PbThe layer and the silver pad are generated in the welding process, and the welding tension is ensured.
Preferably, the solder strip comprises a braze strip.
Preferably, the material of the bonding pad is silver.
In a second aspect, the present invention provides a method for preparing a main gate structure of a photovoltaic module according to the first aspect, wherein the method for preparing the main gate structure comprises:
arranging a main grid on a substrate of the photovoltaic module, arranging bonding pads with sequentially increased areas on the main grid from low temperature to high temperature, and preparing the main grid structure of the photovoltaic module.
As a preferred technical scheme of the invention, the preparation method specifically comprises the following steps:
printing a main grid on a substrate of the photovoltaic module, placing the substrate provided with the main grid on a heating table, sequentially arranging a welding layer on a bonding pad, and welding under light heating to prepare the main grid structure of the photovoltaic module.
In a preferred embodiment of the present invention, the heating temperature of the heating stage is 25 to 100 ℃, for example, 25 ℃, 30 ℃, 40 ℃, 50 ℃, 60 ℃, 70 ℃, 80 ℃, 90 ℃ or 100 ℃.
It should be noted that, in the light heating process, the lamp tube emits heating light to perform irradiation heating.
In a third aspect, the invention provides a photovoltaic module, which includes a substrate and a grid line, wherein the main grid line of the grid line adopts the main grid structure of the photovoltaic module in the first aspect.
The recitation of numerical ranges herein includes not only the above-recited numerical values, but also any numerical values between non-recited numerical ranges, and is not intended to be exhaustive or to limit the invention to the precise numerical values encompassed within the range for brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, by arranging the pad structure, the area of the pad is sequentially increased along the direction that the main grid is close to the central area of the welding box, namely the direction with low temperature to high temperature, so that the distance of heat flowing to the welding strip is adjusted, the temperature of different pads is changed, the effect of controlling tin melting temperature is achieved in the welding process, the influence caused by uneven temperature is counteracted, the tension of the pad tends to be uniform, and the effect of improving the welding tension of the battery is achieved.
Drawings
Fig. 1 is a schematic view of a primary gate structure of a photovoltaic module provided in examples 1 to 4 of the present invention, wherein i represents the primary gate structure of the photovoltaic module of example 1, ii represents the primary gate structure of the photovoltaic module of example 2, iii represents the primary gate structure of the photovoltaic module of example 3, and iv represents the primary gate structure of the photovoltaic module of example 4;
fig. 2 is a schematic diagram of a hollow structure provided in an embodiment of the present invention, in which a, b, and c represent a horizontal linear hollow, a vertical linear hollow, and an oblique linear hollow, respectively, d represents a grid hollow, and e represents a circular hollow;
fig. 3 is a schematic view of a process for manufacturing a main gate structure of a photovoltaic module according to an embodiment of the present invention.
Wherein, 1-a substrate; 2-a pad; 3-Ag3A Sn layer; 4-tin-lead layer; 5-welding a strip; 6-heating table; 7-lamp tube; 8-heating light; 9-main grid.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
It should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The technical solution of the present invention is further explained by the following embodiments.
In one embodiment, the invention provides a main grid structure of a photovoltaic assembly, the main grid structure of the photovoltaic assembly comprises a main grid 9 and at least two bonding pads 2 arranged on the main grid 9 at intervals, and the bonding pads 2 are sequentially increased in area from low temperature to high temperature.
According to the invention, by arranging the pad 2 structure, the area of the pad 2 is sequentially increased along the direction of the main grid 9 close to the central area of the welding box, namely the area with low temperature and high temperature, so that the distance of heat flowing to the welding strip 5 is adjusted, the temperature of different pads 2 is changed, the effect of controlling tin melting temperature is achieved in the welding process, the influence caused by uneven temperature is counteracted, the tension of the pad 2 tends to be uniform, and the effect of improving the welding tension of the battery is achieved.
Specifically, the pad 2 is provided with a hollow structure, and hollow patterns in the hollow structure are arranged at intervals. The invention further arranges the hollow structure on the bonding pad 2, changes the heat transfer path from a two-dimensional surface to a one-dimensional linear transfer by optimizing the heat transfer path of the structure of the bonding pad 2, and further adjusts the temperature of the bonding pad 2 to lead the welding tension to be consistent, thereby improving the welding tension of the battery.
Further, as shown in fig. 2, the hollow structure includes one or a combination of at least two of linear hollow, circular hollow, and grid hollow.
Furthermore, the hollowed-out structure is a linear hollowed-out structure, and the angles of the linear hollowed-out structure and the main grid 9 on the bonding pad 2 are sequentially increased from low temperature to high temperature along the direction of the main grid 9 close to the central area of the bonding box, and the angle of the linear hollowed-out structure and the main grid 9 is 0-90 degrees. The welding box comprises a welding pad 2, linear hollows, a main grid 9, a welding box edge and a plurality of linear hollows, wherein the angle between each linear hollow and the main grid 9 is 90 degrees, namely the transverse linear hollow, the angle between each linear hollow and the corresponding main grid 9 is 0 degree, namely the longitudinal linear hollow, and in addition, when the angle between each linear hollow and the corresponding main grid 9 is between 0 and 90 degrees, the linear hollow is an oblique linear hollow. The invention further changes the heat transmission path by adjusting the angle between the linear hollow and the main grid 9, and balances the temperature of the bonding pad 2.
Specifically, from the direction of low temperature to high temperature, the hollow intervals of the hollow structures on the pad 2 are sequentially reduced. Furthermore, the distance between the hollowed-out patterns is 30-350 μm, and the width of the hollowed-out patterns (such as the width of silver wires) is 30-100 μm.
Specifically, the pad 2 is provided with a solder ribbon 5 thereon. A solder layer is provided between the pad 2 and the solder ribbon 5. The welding layer comprises a tin-lead layer 4 and Ag which are arranged in a stacked mode3Sn layer 3, said Ag3 The Sn layer 3 is near the pad 2 side. The solder strip 5 comprises a copper solder strip 5, and the solder pad 2 is made of silver. Ag in the invention3The Sn layer 3 is generated in the welding process of the tin-lead layer 4 and the silver bonding pad 2, and the welding tension is ensured.
In another embodiment, the invention provides a preparation method of the above-mentioned main grid structure of the photovoltaic module, as shown in fig. 3, the preparation method specifically includes the following steps:
printing a main grid 9 on a substrate 1 of the photovoltaic module, placing the substrate 1 provided with the main grid 9 on a heating table 6 at 25-100 ℃, sequentially arranging a welding layer on a bonding pad 2, and welding under light heating to prepare the main grid structure of the photovoltaic module. Wherein, the lamp tube 7 is adopted to emit heating light 8 to irradiate and heat in the lamp light heating process.
The invention also provides a photovoltaic module which comprises a substrate 1 and grid lines, wherein the main grid 9 line in the grid lines adopts the main grid structure of the photovoltaic module.
Example 1
The embodiment provides a main grid structure of a photovoltaic module, and according to a specific implementation mode, as shown in fig. 1 at i, the areas of bonding pads 2 are sequentially increased along the direction that a main grid 9 is close to the central region of a bonding box.
Example 2
Compared with the embodiment 1, the embodiment provides a main grid structure of a photovoltaic module, and as shown in fig. 1 as ii, the area of a bonding pad 2 is sequentially increased along the direction of a main grid 9 close to the central area of a bonding box, linear hollows are arranged on the bonding pad 2, and the bonding pad is divided into 4 longitudinal linear hollows and 5 transverse linear hollows.
Example 3
Compared with embodiment 1, the present embodiment provides a main grid structure of a photovoltaic module, as shown in fig. 1, in a direction in which a main grid 9 is close to a central region of a welding box, areas of pads 2 are sequentially increased, linear hollows are arranged on the pads 2, and the main grid structure is divided into 3 longitudinal linear hollows, 3 oblique linear hollows and 3 transverse linear hollows.
Example 4
Compared with the embodiment 1, as shown in iv in fig. 1, the area of the bonding pad 2 is sequentially increased along the direction of the main grid 9 approaching the central region of the bonding box, and the bonding pad 2 is provided with linear hollows and is divided into 4 longitudinal linear hollows and 5 transverse linear hollows.
Comparative example 1
This comparative example provides a photovoltaic module main grid structure, which is different from that of example 1 in that the structure and area of each pad 2 are the same.
The bonding tension of the bonding pads 2 prepared in examples 1 and 2 and comparative example 1 was measured, as shown in fig. 1, and the bonding pads of i and ii were No. 1 and No. 2 and No. … … 9, respectively, from top to bottom, and the results of the measurement are shown in table 1.
TABLE 1
As can be seen from the above table, the welding tension test result of the embodiment 1 is obviously superior to that of the comparative example 1, and it can be seen from the embodiment 2 that although the welding tension is reduced due to the hollow structure, the overall tension distribution difference is smaller than that of the comparative example 1, that is, the tension consistency on the bonding pad is improved; in comparative example 1, part of the bonding pads are close to the edge of the welding box, and part of the bonding pads are close to the inside of the welding box, so the temperature of the bonding pads is different, and the conditions of over-bonding and under-bonding are easy to occur during series welding, wherein the bonding pads close to the periphery of the oven are easy to cause Ag due to low welding temperature3The Sn layer 3 is not fully grown, so that the tensile force is low; the solder pad is close to the middle of the oven because of the higher welding temperature, Ag3 The Sn layer 3 grows thick, resulting in a low soldering tension. Therefore, the welding pad 2 structure is arranged, the area of the welding pad 2 is sequentially increased along the direction of the main grid 9 close to the central area of the welding box, so that the distance of heat flowing to the welding strip 5 is adjusted, the temperature of different welding pads 2 is changed, the effect of controlling tin melting temperature is achieved in the welding process, the influence caused by uneven temperature is counteracted, the tension of the welding pad 2 tends to be uniform, and the effect of improving the welding tension of a battery is achieved.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The photovoltaic module main grid structure is characterized by comprising a main grid and at least two bonding pads arranged on the main grid at intervals, wherein the bonding pads are sequentially increased in area from low temperature to high temperature.
2. The main grid structure of a photovoltaic module according to claim 1, wherein hollow structures are arranged on the bonding pad, and hollow patterns in the hollow structures are arranged at intervals;
preferably, the hollow structure comprises one or a combination of at least two of linear hollow, circular hollow and grid hollow.
3. The main grid structure of a photovoltaic module according to claim 2, wherein the hollowed-out structure is a linear hollowed-out structure, and angles between the linear hollowed-out structure and the main grid on the bonding pad are sequentially increased from low temperature to high temperature;
preferably, the angle between the linear hollow and the main grid is 0-90 degrees.
4. The photovoltaic module main grid structure according to claim 2 or 3, wherein the bonding pad is located at the center of the bonding box, and the angle between the linear hollow and the main grid is 90 degrees;
preferably, the angle between the linear hollow and the main grid is 0 degree.
5. The main grid structure of the photovoltaic module according to any one of claims 2 to 4, wherein the hollow intervals of the hollow structures on the bonding pad are sequentially reduced from low temperature to high temperature;
preferably, the width of the hollow pattern of the hollow structure is 30-100 μm;
preferably, the distance between the hollows is 30-350 μm.
6. The primary grid structure of any one of claims 1 to 5, wherein a solder strip is disposed on the solder pad;
preferably, a welding layer is arranged between the welding pad and the welding strip;
preferably, the soldering layer comprises a tin-lead layer and Ag arranged in a stacked manner3Sn layer of said Ag3The Sn layer is close to one side of the bonding pad;
preferably, the solder strip comprises a braze strip;
preferably, the material of the bonding pad is silver.
7. A method for preparing a main grid structure of a photovoltaic module according to any one of claims 1 to 6, characterized in that the method comprises:
arranging a main grid on a substrate of the photovoltaic module, arranging bonding pads with sequentially increased areas on the main grid from low temperature to high temperature, and preparing the main grid structure of the photovoltaic module.
8. The preparation method according to claim 7, comprising the following steps:
printing a main grid on a substrate of the photovoltaic module, placing the substrate provided with the main grid on a heating table, sequentially arranging a welding layer on a bonding pad, and welding under light heating to prepare the main grid structure of the photovoltaic module.
9. The method according to claim 8, wherein the heating temperature of the heating stage is 25 to 100 ℃.
10. A photovoltaic module, characterized in that, the photovoltaic module comprises a substrate and grid lines, wherein the main grid lines of the grid lines adopt the main grid structure of the photovoltaic module as claimed in any one of claims 1 to 6.
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| CN202111565727.0A CN114566555A (en) | 2021-12-20 | 2021-12-20 | Main grid structure of photovoltaic module, preparation method and application thereof |
| PCT/CN2022/140323 WO2023116683A1 (en) | 2021-12-20 | 2022-12-20 | Photovoltaic module main grid structure, preparation method therefor and use thereof |
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| CN202111565727.0A CN114566555A (en) | 2021-12-20 | 2021-12-20 | Main grid structure of photovoltaic module, preparation method and application thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023116683A1 (en) * | 2021-12-20 | 2023-06-29 | 天合光能股份有限公司 | Photovoltaic module main grid structure, preparation method therefor and use thereof |
| CN116581171A (en) * | 2023-07-14 | 2023-08-11 | 金阳(泉州)新能源科技有限公司 | Non-pad superfine main grid back contact battery, back contact battery module and preparation method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148641A (en) * | 2019-06-19 | 2019-08-20 | 晶科能源有限公司 | A kind of solar battery and preparation method thereof, a kind of photovoltaic module |
| CN212161826U (en) * | 2020-05-28 | 2020-12-15 | 江苏隆基乐叶光伏科技有限公司 | Solar cell, photovoltaic module and photovoltaic system |
| CN214043680U (en) * | 2020-09-30 | 2021-08-24 | 无锡尚德太阳能电力有限公司 | Front grid line structure |
| CN113725307B (en) * | 2021-08-27 | 2024-02-06 | 上海晶科绿能企业管理有限公司 | Photovoltaic cell, cell assembly and preparation process |
| CN114566555A (en) * | 2021-12-20 | 2022-05-31 | 天合光能股份有限公司 | Main grid structure of photovoltaic module, preparation method and application thereof |
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2021
- 2021-12-20 CN CN202111565727.0A patent/CN114566555A/en active Pending
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023116683A1 (en) * | 2021-12-20 | 2023-06-29 | 天合光能股份有限公司 | Photovoltaic module main grid structure, preparation method therefor and use thereof |
| CN116581171A (en) * | 2023-07-14 | 2023-08-11 | 金阳(泉州)新能源科技有限公司 | Non-pad superfine main grid back contact battery, back contact battery module and preparation method |
| CN116581171B (en) * | 2023-07-14 | 2023-11-07 | 金阳(泉州)新能源科技有限公司 | Non-pad superfine main grid back contact battery, back contact battery module and preparation method |
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| WO2023116683A1 (en) | 2023-06-29 |
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