WO2023116603A1 - Chambre à semi-conducteurs - Google Patents

Chambre à semi-conducteurs Download PDF

Info

Publication number
WO2023116603A1
WO2023116603A1 PCT/CN2022/139910 CN2022139910W WO2023116603A1 WO 2023116603 A1 WO2023116603 A1 WO 2023116603A1 CN 2022139910 W CN2022139910 W CN 2022139910W WO 2023116603 A1 WO2023116603 A1 WO 2023116603A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetic
magnetron
magnetic device
semiconductor
transmission member
Prior art date
Application number
PCT/CN2022/139910
Other languages
English (en)
Chinese (zh)
Inventor
张同文
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Publication of WO2023116603A1 publication Critical patent/WO2023116603A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of semiconductors, in particular to a semiconductor chamber.
  • Physical vapor deposition (Physical Vapor Deposition, PVD) technology is widely used in the field of semiconductor manufacturing, including vacuum evaporation, sputtering coating, molecular beam epitaxy, etc.
  • sputtering coating is widely used in metal thin film process.
  • the basic principle of sputtering coating is to introduce process gas in a high vacuum environment and apply a voltage across the electrodes to make the gas generate glow discharge. At this time, the positive ions in the plasma hit the target under the action of a strong electric field. , the target metal atoms are sputtered and deposited on the surface of the wafer.
  • a magnetic device in order to make the magnetic film deposited on the surface of the wafer have in-plane anisotropy, a magnetic device is installed in the semiconductor chamber.
  • the magnetic device can form a horizontal magnetic field parallel to the carrying surface of the wafer carrying table, so that During sputtering deposition, the magnetic domains of the sputtered material are arranged in the horizontal direction, so the deposited magnetic film forms an easy magnetization field in this direction, and a hard magnetization field in the direction perpendicular to the magnetic film, thus forming in-plane magnetization. Anisotropic field, and then get the in-plane anisotropic magnetic thin film.
  • the direction of the magnetic field of the magnetron is changing.
  • the two magnetic fields are superimposed.
  • the strength of the magnetic field is enhanced, so the density of the plasma generated at this position is high, and the bombardment of the target by the plasma is stronger, so the sputtering rate of the target material in this area increases, so that the deposition of the wafer area corresponding to this area
  • the thickness of the magnetic film is relatively thick.
  • the density of the plasma generated at the position is small, and the effect of the plasma on the target
  • the bombardment is weaker, so the sputtering rate of the target material in this area is reduced, so that the thickness of the deposited magnetic film on the area of the wafer corresponding to this area is thinner.
  • FIG. 1 the result after deposition of the wafer 10 is shown. Since the magnetic field directions of the magnetron and the magnetic device have different overlapping effects in different regions, the bombardment effect of the plasma on the target is different, which makes the thickness of the magnetic film deposited on the wafer different, resulting in a relatively uniform thickness of the film on the wafer surface. Difference.
  • the invention discloses a semiconductor chamber to solve the problem of poor film thickness uniformity on the wafer surface.
  • the present invention adopts the following technical solutions:
  • a semiconductor chamber the semiconductor chamber includes a chamber body, a magnetron, a wafer carrier and a target, the magnetron and the target are located on the top of the chamber body, the wafer
  • the carrying platform is located in the chamber body, and the semiconductor chamber further includes a first magnetic device and a second magnetic device;
  • the first magnetic device is located in the chamber body and arranged around the wafer carrier, the first magnetic device can form a magnetic field parallel to the carrier surface of the wafer carrier;
  • the second magnetic device is arranged around the chamber body, the second magnetic device is located between the first magnetic device and the magnetron, and the magnetic pole arrangement direction of the first magnetic device is the same as that of the The magnetic poles of the second magnetic device are arranged in the same direction, and the magnetic field generated by the second magnetic device can interact with the magnetic field generated by the magnetron to reduce the magnetic field of the magnetron parallel to the surface of the target. magnetic effect.
  • the second magnetic device is located between the first magnetic device and the magnetron, and the magnetic field generated by the second magnetic device can interact with the magnetic field generated by the magnetron, so the magnetic field can be reduced.
  • the magnetic effect of the tube in the direction parallel to the target surface that is to say, reduces the magnetic field component of the magnetron parallel to the target surface, that is, the partial magnetism of the loss magnetron.
  • the magnetic loss of the magnetron will make the magnetron parallel to the surface of the target.
  • the strength of the magnetic field component is weakened, so that the difference between the superposition effect of the magnetic field of the magnetron and the magnetic field of the magnetic device when the magnetron is rotated to different positions can be reduced, so that the plasma bombards the target corresponding to the area where the magnetron rotates to different positions
  • the effect is relatively uniform, so that the sputtering rate of the target corresponding to the area where the magnetron rotates to different positions is close, so as to improve the uniformity of the film thickness deposited on the wafer surface.
  • FIG. 1 is a structural schematic diagram of the film thickness on the wafer surface in the related art
  • FIG. 2 is a schematic structural diagram of a semiconductor chamber disclosed in an embodiment of the present invention.
  • FIG. 3 and 4 are structural schematic diagrams of some components of the semiconductor chamber disclosed in the embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a second magnetic device in a semiconductor chamber disclosed in an embodiment of the present invention.
  • FIGS 6 and 7 are structural schematic diagrams of some components of the second magnetic device in the semiconductor chamber disclosed in the embodiment of the present invention.
  • FIG. 8 is a schematic structural view of the film thickness of the wafer surface in the semiconductor chamber disclosed in the embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of a ring protection member in a semiconductor chamber disclosed by an embodiment of the present invention.
  • the embodiment of the present invention discloses a semiconductor chamber.
  • the disclosed semiconductor chamber includes a chamber body 100, a magnetron 200, a wafer carrier 300, a target 700, a first magnetic device 400 and a second magnetic device 500 .
  • the chamber body 100 is a main part of the semiconductor chamber, and the chamber body 100 is used to provide an installation base for other components of the semiconductor chamber.
  • a target 700 is installed on the top of the chamber body 100 .
  • the magnetron 200 is located on the top of the chamber body 100 , and the magnetron 200 is disposed opposite to the target 700 and above the target 700 .
  • Both the wafer carrying table 300 and the first magnetic device 400 are located in the chamber body 100 , and the wafer carrying table 300 is used for carrying a wafer 800 .
  • the first magnetic device 400 is located in the chamber body 100 and is disposed around the wafer carrier 300 .
  • the first magnetic device 400 can form a magnetic field parallel to the carrier surface of the wafer carrier 300 .
  • the first magnetic device 400 can form a horizontal magnetic field parallel to the carrying surface of the wafer stage 300, so that during sputtering deposition, the magnetic domains of the sputtered material are in the horizontal plane (that is, parallel to the carrying surface of the wafer stage 300).
  • the deposited film forms an easy magnetization field in this specified direction, and forms a hard magnetization field in a direction perpendicular to the specified direction in the horizontal plane, thereby forming an in-plane anisotropy field, Further, an in-plane anisotropic magnetic thin film is obtained.
  • the second magnetic device 500 is arranged around the chamber body 100.
  • the second magnetic device 500 is located between the first magnetic device 400 and the magnetron 200.
  • the magnetic pole arrangement direction of the first magnetic device 400 is the same as that of the second magnetic device 500
  • the layout direction is the same, the so-called magnetic pole arrangement direction refers to the direction of the two magnetic poles of the first magnetic device 400 or the second magnetic device 500, and the magnetic pole arrangement direction of the first magnetic device 400 is the same as the magnetic pole arrangement direction of the second magnetic device 500
  • the same layout direction means that the N poles of the first magnetic device 400 and the N poles of the second magnetic device 500 point in the same direction, and the S poles of the first magnetic device 400 and the S poles of the second magnetic device 500 point in the same direction.
  • the magnetic field generated by the second magnetic device 500 can interact with the magnetic field generated by the magnetron 200 to reduce the magnetic effect of the magnetron 200 in a direction parallel to the surface of the target 700.
  • the essence of the magnetic effect here is to reduce the magnetic field component of the magnetron 200 parallel to the surface of the target 700 , that is, to reduce the horizontal magnetic field component of the magnetron 200 .
  • the second magnetic device 500 is located between the first magnetic device 400 and the magnetron 200, and the magnetic field generated by the second magnetic device 500 can interact with the magnetic field generated by the magnetron 200, so it can Reduce the magnetic effect of the magnetron 200 in the direction parallel to the surface of the target 700 , that is, reduce the magnetic field component of the magnetron 200 parallel to the surface of the target, that is, lose part of the magnetism of the magnetron.
  • the magnetic loss of the magnetron will make the magnetron parallel to the surface of the target.
  • the strength of the magnetic field component is weakened, so that the difference between the superposition effect of the magnetic field of the magnetron and the magnetic field of the magnetic device when the magnetron is rotated to different positions can be reduced, so that the plasma bombards the target corresponding to the area where the magnetron rotates to different positions
  • the effect is relatively uniform, so that the sputtering rate of the target corresponding to the area where the magnetron rotates to different positions is close, so as to improve the uniformity of the film thickness deposited on the wafer surface.
  • the semiconductor chamber provided by the embodiment of the present application is used to deposit the thin film on the wafer 800.
  • the obtained wafer 800 is shown in FIG. better uniformity.
  • the effect achieved by this solution can also be understood as that the magnetic field generated by the second magnetic device 500 can interact with the magnetic field generated by the magnetron 200, so the magnetic field component of the magnetron 200 parallel to the surface of the target 700 can be reduced , this part of the magnetic field component reduced by the magnetron 200 can be equivalent to the horizontal component of the magnetic field generated by the first magnetic device 400 superimposed on the surface of the target 700.
  • the magnetic field generated by the magnetron 200 and the The magnetic field formed by the superposition of the magnetic fields is equivalent to the magnetic field when only the magnetron 200 acts, thus canceling the effect of the first magnetic device 400 on the superposition enhancement or superposition weakening of the magnetic field on the surface of the target.
  • the first magnetic device 400 may include a first magnetic member 410 and a second magnetic member 420, and the first magnetic member 410 and the second magnetic member 420 are along the circumference of the wafer carrier table 300 Arranged at intervals, the magnetic pole of the first magnetic member 410 facing the wafer carrier 300 may be opposite to the magnetic pole of the second magnetic member 420 facing the wafer carrier 300 .
  • the N pole of the first magnetic element 410 faces the wafer supporting platform 300
  • the S pole of the first magnetic element 410 faces away from the wafer supporting platform 300
  • the S pole of the second magnetic member 420 faces the wafer supporting platform 300
  • the N pole of the second magnetic member 420 faces away from the wafer supporting platform 300 .
  • the second magnetic device 500 may include a third magnetic member 510 and a fourth magnetic member 520 , and the third magnetic member 510 and the fourth magnetic member 520 may be arranged at intervals along the circumference of the chamber body 100 .
  • the third magnetic piece 510 is located on the side where the first magnetic piece 410 is located, and the fourth magnetic piece 520 is located on the side where the second magnetic piece 420 is located.
  • the arrangement directions are the same, and the arrangement direction of the magnetic poles of the second magnetic member 420 is the same as that of the fourth magnetic member 520 .
  • the magnetic elements in the first magnetic device 400 correspond to the magnetic elements in the second magnetic device 500 , so the precision of the magnetic action can be improved, thereby further improving the uniformity of the film thickness on the surface of the wafer 800 .
  • the components of the first magnetic device 400 and the second magnetic device 500 have simple structures, so the manufacturing process is simple and the cost is low.
  • the direction of the horizontal component of the magnetic field generated by the magnetron 200 is opposite to that of the horizontal component of the magnetic field generated by the first magnetic device 400, so that after the superposition The magnetic field strength is weakened.
  • the magnetic field generated by the third magnetic member 510 interacts with the magnetic field generated by the magnetron 200, so that the horizontal component of the magnetic field generated by the magnetron 200 is reduced, so that the first magnetic field that the magnetic field generated by the magnetron 200 can cancel The horizontal component of the device 400 is reduced, thereby enhancing the superimposed magnetic field.
  • the horizontal component of the magnetic field generated by the magnetron 200 is in the same direction as the horizontal component of the magnetic field generated by the first magnetic device 400, so that after the superposition The strength of the magnetic field increases.
  • the magnetic field generated by the fourth magnetic member 520 interacts with the magnetic field generated by the magnetron 200, so that the horizontal component of the magnetic field generated by the magnetron 200 is reduced, so that the first magnetic field that can be superimposed by the magnetic field generated by the magnetron 200
  • the horizontal component of the device 400 decreases, thereby weakening the superimposed magnetic field.
  • the semiconductor chamber may further include a driving mechanism 530, which may be connected to the chamber body 100, and the driving mechanism 530 may be Connected with both the third magnetic part 510 and the fourth magnetic part 520 , the driving mechanism 530 can be used to drive the third magnetic part 510 and the fourth magnetic part 520 to approach or move away from the magnetron 200 .
  • a driving mechanism 530 which may be connected to the chamber body 100, and the driving mechanism 530 may be Connected with both the third magnetic part 510 and the fourth magnetic part 520 , the driving mechanism 530 can be used to drive the third magnetic part 510 and the fourth magnetic part 520 to approach or move away from the magnetron 200 .
  • the driving mechanism 530 drives the third magnetic member 510 and the fourth magnetic member 520 to approach the magnetron 200, and the closer the third magnetic member 510 and the fourth magnetic member 520 are to the magnetron 200, the third magnetic member 510 and the fourth magnetic member 520 are closer to the magnetron 200.
  • the driving mechanism 530 drives the third magnetic part 510 and the fourth magnetic part 520 away from the magnetron 200, the farther the third magnetic part 510 and the fourth magnetic part 520 are from the magnetron 200, the third magnetic part 510 and The weaker the interaction between the magnetic field generated by the fourth magnetic member 520 and the magnetic field generated by the magnetron 200 is, the smaller the reduction of the magnetic field component of the magnetron 200 is. Therefore, by adjusting the distance between the first magnetic member 410 and the second magnetic member 420 and the magnetron 200, the magnetic field intensity of the magnetron 200 and the first magnetic member 410 can be adjusted to further improve the wafer The uniformity of the surface film of 800.
  • the driving mechanism 530 may include a driving source 531 and a transmission member 532, both the third magnetic member 510 and the fourth magnetic member 520 may be connected to the transmission member 532, the driving source 531 may be connected to the transmission The driving source 531 drives the third magnetic member 510 and the fourth magnetic member 520 to move through the transmission member 532 .
  • the transmission part 532 is used to carry the third magnetic part 510 and the fourth magnetic part 520, and is also used to drive the third magnetic part 510 and the fourth magnetic part 520 to move, so the structure of the driving mechanism 530 is simple and easy to manufacture .
  • the drive source 531 may be a power structure such as a DC motor, an AC asynchronous motor, or a hydraulic motor.
  • the drive source 531 may also be of other structures, which are not limited herein.
  • the transmission member 532 may include a bearing plate 5321 and a protective member 5322, the protective member 5322 may be arranged on the top of the bearing plate 5321, the driving source 531 may be connected to the bearing plate 5321, the protective member 5322 may be provided with a protective cavity, and the third Both the magnetic part 510 and the fourth magnetic part 520 may be located in the protective cavity, and the driving source 531 drives the third magnetic part 510 and the fourth magnetic part 520 to move through the carrying plate 5321 and the protective part 5322 .
  • the protective part 5322 can protect the third magnetic part 510 and the fourth magnetic part 520 , thereby improving the safety performance of the second magnetic device 500 .
  • the protective member 5322 may include a first plate body 5322a and a second plate body 5322b, the first plate body 5322a may be provided with a receiving groove, and the second plate body 5322b may cover the groove of the receiving groove
  • the accommodating groove and the second plate body 5322b can form a protective cavity.
  • the first plate body 5322a is provided with a receiving groove, and the receiving groove is an open structure, so the first plate body 5322a is easy to demould, and then the second plate body 5322b is covered on the notch of the receiving groove to form a protective cavity, thereby reducing the difficulty of making the guard 5322.
  • the outer contours of the bearing plate 5321 and the protective member 5322 may both be ring structures.
  • the carrier plate 5321 and the protective member 5322 are located in the chamber body 100, since the carrier plate 5321 and the protective member 5322 are ring-shaped, it is not easy to cover the wafer, so that it is not easy to affect the thin film deposition on the surface of the wafer 800 .
  • the bearing plate 5321 and the protective piece 5322 are located outside the chamber body 100, the bearing plate 5321 and the protective piece 5322 are annular structures, which can be sleeved on the outside of the chamber body 100, thereby facilitating the installation of the bearing plate 5321 and the protective piece 5322.
  • the carrying plate 5321 may include at least two first arc-shaped plates, and the at least two first arc-shaped plates form a ring structure.
  • the guard 5322 may include at least two second arc-shaped plates, and the at least two second arc-shaped plates form a ring structure.
  • the supporting plate 5321 and the protective member 5322 are formed by splicing multiple arc-shaped plates, so the installation and manufacture of the protective member 5322 and the supporting plate 5321 are convenient.
  • the carrying plate 5321 may include two semicircular first arc-shaped plates, and the guard 5322 may also include two semi-circular second arc-shaped plates.
  • each first arc-shaped plate of the protective member 5322 may include the above-mentioned first plate body 5322a and second plate body 5322b.
  • the drive mechanism 530 may include a first drive source, a second drive source, a first transmission member 541 and a second transmission member 542, the first drive source is connected to the first transmission member 541,
  • the first transmission part 541 can be connected with the third magnetic part 510 .
  • the first driving source drives the third magnetic member 510 to move through the first transmission member 541 .
  • the second driving source is connected to the second transmission part 542 , and the second transmission part 542 is connected to the fourth magnetic part 520 , and the second driving source can drive the fourth magnetic part 520 to move through the second magnetic part 420 .
  • the third magnetic part 510 and the fourth magnetic part 520 can be driven separately, so as to adjust the distance between the third magnetic part 510 and the fourth magnetic part 520 and the magnetron 200 to achieve a better effect of optimizing the magnetic field .
  • the structure of the first transmission member 541 and the second transmission member 542 can be the same as that of the transmission member above, and both the first transmission member 541 and the second transmission member 542 can include the above-mentioned bearing plate 5321 and the protective The member 5322, the carrying plate 5321 and the protective member 5322 can be in a semicircular structure.
  • the number of the third magnetic parts 510 and the fourth magnetic parts 520 can be multiple, and the plurality of third magnetic parts 510 and the plurality of fourth magnetic parts 520 are all along the chamber body. 100 circumferential interval distribution.
  • the strength of the magnetic field is adjusted by adjusting the number of the third magnetic member 510 and the fourth magnetic member 520 to achieve a better effect of optimizing the magnetic field.
  • the second magnetic device 500 may be located in the chamber body 100 , that is, the second magnetic device 500 may be installed on the inner wall of the chamber body 100 . In another optional embodiment, the second magnetic device 500 may be located outside the chamber body 100 . In this solution, the second magnetic device 500 is located outside the chamber body 100, so the second magnetic device 500 will not occupy the space in the chamber body 100, so that it is not easy to block the wafer 800 below, and the wafer 800 is improved. 800 deposition uniformity.
  • the second magnetic device 500 is disposed on the outside of the chamber body 100, and it is not easy to form an interactive magnetic field between the magnetic parts in the second magnetic device 500.
  • the second magnetic device 500 includes the above-mentioned third magnetic part 510 and the fourth magnetic piece 520
  • the third magnetic piece 510 and the fourth magnetic pole piece are located at the same position inside and outside the chamber body 100
  • the third magnetic piece 510 and the fourth magnetic piece 520 are located outside the chamber body 100
  • the interaction between the third magnetic member 510 and the fourth magnetic member 520 is less likely to affect the deposition effect of the thin film.
  • the semiconductor chamber further includes a deposition ring 610 , a cover ring 620 and a protection ring 630 , and the deposition ring 610 , the cover ring 620 and the protection ring 630 can all be located in the chamber body 100 .
  • the deposition ring 610 may be disposed around the wafer carrier 300
  • the cover ring 620 may be disposed around the deposition ring 610 .
  • the protection member can be disposed around the cover ring 620 .
  • the protection ring 630 is fixedly connected with the chamber body 100 .
  • the first magnetic device 400 disclosed in the present application can be disposed between the cover ring 620 and the protection ring 630 , and the first magnetic device 400 can be fixed on the protection ring 630 .
  • the chamber body 100 is further provided with an annular protection member 900 , and the annular protection member 900 is disposed around between the cover ring 620 and the protection ring 630 .
  • the ring protector 900 is provided with a housing protection cavity, and the first magnetic device 400 can be located in the protection cavity, so as to prevent the first magnetic device 400 from being damaged.
  • the first magnetic device 400 can also have a heat insulation effect, so as to prevent heat from being transferred to the first magnetic device 400 during the deposition process and affecting the magnetic properties of the first magnetic device 400 .
  • the protection cavity of the ring protection member 900 can be divided into left and right parts, the left part is used to place the first magnetic part 410 , and the right part is used to place the second magnetic part 420 .
  • the ring protection member 900 may include a base 910 , a cover plate 920 and a fixing member 930 , the base 910 and the cover plate 920 enclose a protection cavity, and the base 910 is fixed on the protection ring 630 through the fixing member 930 .
  • the base 910 may be fixed to the protection ring 630 by bolts.
  • the base 910 is detachably connected to the cover 920 , so as to facilitate the assembly of the first magnetic device 400 .
  • the first magnetic device 400 includes a plurality of first magnetic parts 410 and a plurality of second magnetic parts 420
  • its specific arrangement is as follows: The directions of the magnetic poles all point to the center of the ring protection member 900 , that is, to the center of the wafer carrier 300 .
  • the side wall of the base 910 facing the wafer carrier 300 can be made of non-magnetic material.
  • Other side walls of the base 910 can be made of magnetically permeable or non-magnetically permeable materials.

Abstract

La présente invention divulgue une chambre à semi-conducteurs, comprenant un corps de chambre, un magnétron, une table de support de tranche et une cible. Le magnétron et la cible sont tous deux situés au sommet du corps de chambre, la table de support de tranche est située à l'intérieur du corps de chambre, et la chambre à semi-conducteurs comprend en outre un premier dispositif magnétique et un second dispositif magnétique ; le premier dispositif magnétique est situé à l'intérieur du corps de chambre et disposé autour de la table de support de tranche, et le premier dispositif magnétique peut former un champ magnétique parallèle à la surface de support de la table de support de tranche ; le second dispositif magnétique est disposé à l'intérieur du corps de chambre, le second dispositif magnétique est situé entre le premier dispositif magnétique et le magnétron, le sens d'agencement des pôles magnétiques du premier dispositif magnétique est le même que le sens d'agencement des pôles magnétiques du second dispositif magnétique, et le second dispositif magnétique peut interagir avec le magnétron pour réduire l'effet magnétique du magnétron parallèle à la surface de la cible.
PCT/CN2022/139910 2021-12-21 2022-12-19 Chambre à semi-conducteurs WO2023116603A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111570407.4 2021-12-21
CN202111570407.4A CN114196931B (zh) 2021-12-21 2021-12-21 半导体腔室

Publications (1)

Publication Number Publication Date
WO2023116603A1 true WO2023116603A1 (fr) 2023-06-29

Family

ID=80655697

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/139910 WO2023116603A1 (fr) 2021-12-21 2022-12-19 Chambre à semi-conducteurs

Country Status (3)

Country Link
CN (1) CN114196931B (fr)
TW (1) TWI821080B (fr)
WO (1) WO2023116603A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114196931B (zh) * 2021-12-21 2023-09-08 北京北方华创微电子装备有限公司 半导体腔室

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101142094A (zh) * 2005-03-18 2008-03-12 应用材料公司 磁控管溅射室上的分离磁体环
CN101374972A (zh) * 2006-03-09 2009-02-25 应用材料股份有限公司 等离子体溅镀中的刻蚀及侧壁选择性
TW201016875A (en) * 2008-09-26 2010-05-01 Tango Systems Inc Confining magnets in sputtering chamber
CN108004516A (zh) * 2016-10-31 2018-05-08 北京北方华创微电子装备有限公司 磁控溅射腔室、磁控溅射设备以及磁控管
CN111101097A (zh) * 2018-10-26 2020-05-05 北京北方华创微电子装备有限公司 反应腔室及薄膜沉积设备
CN112359335A (zh) * 2020-10-23 2021-02-12 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
CN114196931A (zh) * 2021-12-21 2022-03-18 北京北方华创微电子装备有限公司 半导体腔室

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103374705B (zh) * 2012-04-11 2015-12-02 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控溅射装置
CN104746025A (zh) * 2013-12-27 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 溅射装置
US10312065B2 (en) * 2016-07-20 2019-06-04 Applied Materials, Inc. Physical vapor deposition (PVD) plasma energy control per dynamic magnetron control
CN106637109B (zh) * 2016-10-18 2017-11-03 重庆科技学院 磁极辅助非平衡磁控溅射装置
CN108010718B (zh) * 2016-10-31 2020-10-13 北京北方华创微电子装备有限公司 磁性薄膜沉积腔室及薄膜沉积设备
CN108690962B (zh) * 2017-04-06 2020-06-19 北京北方华创微电子装备有限公司 磁控溅射设备及磁控溅射沉积方法
CN110527967B (zh) * 2019-09-23 2020-09-11 上海陛通半导体能源科技股份有限公司 物理气相沉积设备

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101142094A (zh) * 2005-03-18 2008-03-12 应用材料公司 磁控管溅射室上的分离磁体环
CN101374972A (zh) * 2006-03-09 2009-02-25 应用材料股份有限公司 等离子体溅镀中的刻蚀及侧壁选择性
TW201016875A (en) * 2008-09-26 2010-05-01 Tango Systems Inc Confining magnets in sputtering chamber
CN108004516A (zh) * 2016-10-31 2018-05-08 北京北方华创微电子装备有限公司 磁控溅射腔室、磁控溅射设备以及磁控管
CN111101097A (zh) * 2018-10-26 2020-05-05 北京北方华创微电子装备有限公司 反应腔室及薄膜沉积设备
CN112359335A (zh) * 2020-10-23 2021-02-12 北京北方华创微电子装备有限公司 半导体工艺设备及其工艺腔室
CN114196931A (zh) * 2021-12-21 2022-03-18 北京北方华创微电子装备有限公司 半导体腔室

Also Published As

Publication number Publication date
CN114196931B (zh) 2023-09-08
TW202325875A (zh) 2023-07-01
CN114196931A (zh) 2022-03-18
TWI821080B (zh) 2023-11-01

Similar Documents

Publication Publication Date Title
JP3159949B2 (ja) 陰極アーク放電を用いた薄膜蒸着装置
KR0165860B1 (ko) 마그네트론스퍼터링장치
KR101147484B1 (ko) 스퍼터링 방법 및 스퍼터링 장치
WO2015139503A1 (fr) Chambre de pulvérisation magnétron et dispositif de pulvérisation magnétron
JP6793904B2 (ja) マグネトロン、マグネトロンスパッタリングチャンバー及びマグネトロンスパッタリング装置
WO2023116603A1 (fr) Chambre à semi-conducteurs
KR101430809B1 (ko) 진공 성막 장치
US20020144903A1 (en) Focused magnetron sputtering system
JP3590460B2 (ja) マグネトロンスパッタ用カソード電極
WO2018068833A1 (fr) Agencement d'aimants pour source de dépôt par pulvérisation et source de dépôt par pulvérisation magnétron
US5328582A (en) Off-axis magnetron sputter deposition of mirrors
JP3411312B2 (ja) マグネトロン・スパッタカソードおよび膜厚分布の調整方法
KR101005203B1 (ko) 대향 타겟식 스퍼터링 장치
WO2013088623A1 (fr) Dispositif de traitement et blindage
KR20190108812A (ko) 전자석을 포함하는 스퍼터장치용 스퍼터건
CN108690961A (zh) 磁控溅射组件、磁控溅射腔室及磁控溅射设备
KR20190080122A (ko) 플라즈마 영역이 확장된 반응형 스퍼터장치
CN108690962B (zh) 磁控溅射设备及磁控溅射沉积方法
KR101005204B1 (ko) 대향 타겟식 스퍼터링 장치
KR101838852B1 (ko) 스퍼터링 장치
KR102548205B1 (ko) 스퍼터링 장치용 스퍼터건
KR102548201B1 (ko) 고효율 스퍼터장치
JPH04329875A (ja) スパッタデポジション装置
JP2000017435A (ja) マグネトロンスパッタ方法及び装置
JPH11323547A (ja) スパッタ成膜方法およびその装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22909916

Country of ref document: EP

Kind code of ref document: A1