WO2023094937A1 - 表示装置および電子機器 - Google Patents

表示装置および電子機器 Download PDF

Info

Publication number
WO2023094937A1
WO2023094937A1 PCT/IB2022/061010 IB2022061010W WO2023094937A1 WO 2023094937 A1 WO2023094937 A1 WO 2023094937A1 IB 2022061010 W IB2022061010 W IB 2022061010W WO 2023094937 A1 WO2023094937 A1 WO 2023094937A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
transistor
conductive layer
display device
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2022/061010
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
山崎舜平
楠紘慈
片山雅博
佐藤来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2023563352A priority Critical patent/JPWO2023094937A1/ja
Priority to CN202280077740.8A priority patent/CN118284849A/zh
Priority to US18/710,360 priority patent/US20250004337A1/en
Priority to KR1020247020088A priority patent/KR20240112305A/ko
Publication of WO2023094937A1 publication Critical patent/WO2023094937A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13334—Plasma addressed liquid crystal cells [PALC]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/16—Materials and properties conductive
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Definitions

  • One embodiment of the present invention relates to liquid crystal display devices and electronic devices.
  • one embodiment of the present invention is not limited to the above technical field.
  • Technical fields of one embodiment of the present invention include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices (e.g., touch sensors), and input/output devices (e.g., touch panels). ), how they are driven, or how they are manufactured.
  • a technique of using a metal oxide exhibiting semiconductor characteristics for a transistor instead of a silicon semiconductor is attracting attention.
  • a metal oxide exhibiting semiconductor characteristics is referred to as an oxide semiconductor.
  • a transistor is manufactured using zinc oxide or an In--Ga--Zn-based oxide as an oxide semiconductor, and the transistor is used as a switching element of a pixel of a display device. Techniques are disclosed.
  • a display device using a liquid crystal device can display a high-definition image by increasing the number of pixels per unit area.
  • a pixel In the case of an active matrix display device, a pixel must be provided with a liquid crystal device, a transistor, a capacitor, wiring, and the like.
  • the aperture ratio ratio of effective display area in pixels
  • one object of one embodiment of the present invention is to provide a display device with a high aperture ratio. Another object is to provide a display device with low power consumption. Another object is to provide a high-definition display device. Another object is to provide a highly reliable display device.
  • One embodiment of the present invention relates to a liquid crystal display device with a high aperture ratio.
  • One embodiment of the present invention includes a first transistor, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, a second insulating layer, and an alignment film. and a liquid crystal layer, the first transistor is electrically connected to the first conductive layer, the first insulating layer is provided over the first transistor and the first conductive layer, and the The first insulating layer has an opening penetrating through the first insulating layer in a region overlapping with the first conductive layer, and is exposed to the upper surface of the first insulating layer, the side surface of the opening, and the bottom of the opening.
  • a second conductive layer is provided in contact with the first conductive layer, and a second insulating layer is provided in contact with the second conductive layer so as to fill a step due to the opening.
  • a third conductive layer is provided in contact with the conductive layer and the second insulating layer, an alignment film is provided over the first insulating layer, the second conductive layer and the third conductive layer, and a liquid crystal is formed on the alignment film.
  • the display device is provided with layers, and the first conductive layer, the second conductive layer, the third conductive layer, the first insulating layer, and the second insulating layer transmit visible light. .
  • a light-blocking layer can be provided over the liquid crystal layer, and in a plan view, the light-blocking layer has a region that overlaps with the first transistor and does not have a region that overlaps with the opening.
  • the first conductive layer is a metal oxide, and the first conductive layer can be electrically connected to the semiconductor layer of the first transistor through the metal layer.
  • the first conductive layer and metal layer can act as one electrode of a capacitor.
  • a semiconductor layer included in the first transistor is preferably a metal oxide.
  • the display device has a backlight device, and the light source of the backlight device can have light emitting diodes.
  • the light emitted by the light-emitting diode is blue, and having a color conversion layer on the light-emitting diode, the backlight device can emit white light.
  • the color conversion layer can have quantum dots.
  • the light-emitting diode can be electrically connected to the second transistor, and a driver circuit for driving the second transistor can be provided so as to overlap with the light-emitting diode.
  • the second transistor can have metal oxide in its channel-forming region, and the transistor in the driver circuit can have silicon in its channel-forming region.
  • the light emitting diodes are preferably mini LEDs or micro LEDs.
  • a connector such as a FPC (flexible printed circuit) or TCP (tape carrier package) attached to the display unit, a module provided with a printed wiring board at the end of the TCP, or a display element
  • the display device may also include a module in which an IC (integrated circuit) is directly mounted on a formed substrate by a COG (Chip On Glass) method.
  • a display device with a high aperture ratio can be provided.
  • a display device with low power consumption can be provided.
  • a high-definition display device can be provided.
  • a highly reliable display device can be provided.
  • FIG. 1A and 1B are diagrams illustrating pixels.
  • 2A and 2B are diagrams illustrating pixels.
  • 3A and 3B are diagrams illustrating pixels.
  • 4A and 4B are diagrams illustrating pixels.
  • 5A and 5B are diagrams for explaining lamination of a liquid crystal display device and a backlight device.
  • FIG. 6A is a block diagram of a liquid crystal display device.
  • FIG. 6B is a diagram illustrating a pixel circuit of the liquid crystal display device.
  • 7A and 7B are block diagrams of backlight devices.
  • FIGS. 7E1 to 7E3 are diagrams for explaining the circuit of the light emitting unit.
  • 8A to 8C are diagrams for explaining a liquid crystal display device.
  • FIG. 9 is a cross-sectional view for explaining a liquid crystal display device.
  • FIG. 10 is a cross-sectional view for explaining lamination of a liquid crystal display device and a backlight device.
  • 11A to 11D are diagrams illustrating transistors.
  • 12A to 12E are diagrams illustrating electronic devices.
  • film and “layer” can be interchanged depending on the case or situation.
  • conductive layer can be changed to the term “conductive film.”
  • insulating film can be changed to the term “insulating layer”.
  • a metal oxide is a metal oxide in a broad sense.
  • Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as oxide semiconductors or simply OSs), and the like.
  • oxide semiconductors also referred to as oxide semiconductors or simply OSs
  • an OS transistor can be referred to as a transistor including a metal oxide or an oxide semiconductor.
  • metal oxides containing nitrogen may also be collectively referred to as metal oxides.
  • a metal oxide containing nitrogen may also be referred to as a metal oxynitride.
  • a display device of one embodiment of the present invention relates to a liquid crystal display device with an increased aperture ratio.
  • a liquid crystal device (also referred to as a liquid crystal element) has a structure in which a liquid crystal layer sandwiched between a pair of alignment films is sandwiched between a pair of electrodes.
  • the alignment film has the function of aligning the liquid crystal molecules uniformly, but if the alignment film is formed in a region where a step occurs, the liquid crystal layer on the region may have an alignment defect.
  • the liquid crystal layer provided on the region and the vicinity thereof is particularly prone to poor alignment. Since the region where the orientation is defective lowers the display contrast due to light leakage or the like, the region is preferably covered with a light shielding layer. On the other hand, since the area of the light shielding layer is enlarged, the aperture ratio is lowered.
  • a step due to a contact hole is filled with an insulating layer to eliminate alignment defects in a liquid crystal layer.
  • the wiring exposed at the bottom of the contact hole is formed using a light-transmitting material.
  • FIG. 1A is a top view of a pixel included in a liquid crystal display device of one embodiment of the present invention
  • FIG. 1B is an enlarged view of part of a cross section taken along line segment A1-A2 in FIG. 1A.
  • FIG. 1A some elements are omitted for clarity.
  • Pixel 10 has a transistor 20, a capacitor 30 and a liquid crystal device.
  • the transistor 20 has a wiring 21, a wiring 22, a semiconductor layer 23, and a wiring 34 as elements.
  • the semiconductor layer 23 an oxide semiconductor (metal oxide), amorphous silicon, microcrystalline silicon, polycrystalline silicon, or the like can be used.
  • the semiconductor layer 23 is electrically connected to the wirings 21 and 34 .
  • the wiring 21 functions as one of the source and the drain
  • the wiring 22 functions as the gate
  • the wiring 34 functions as the other of the source and the drain.
  • the wiring 21, the wiring 22, and the wiring 34 are preferably provided using a low-resistance conductive layer.
  • a metal layer of titanium, tantalum, tungsten, chromium, aluminum, or the like, or an alloy layer containing one or more of these can be used.
  • the conductive layer may be a laminate of two or more layers selected from the metal layers and alloy layers described above.
  • FIG. 1A exemplifies the transistor 20 as a back-gate type, it may be a top-gate type or a self-aligned type.
  • the capacitor 30 is of the MIM (Metal-Insulator-Metal) type and has a wiring 31, an insulating layer 32, a wiring 33, and a wiring 34 as elements.
  • the wiring 31 functions as one electrode of the capacitor 30, the insulating layer 32 functions as a dielectric layer, and the wiring 33 and wiring 34 function as the other electrodes.
  • the wiring 31 can be formed in the same process as the wiring 22 .
  • the insulating layer 32 also functions as a gate insulating film of the transistor 20 .
  • the wiring 33 also functions as a wiring that connects with the pixel electrode 41 (conductive layer 41a). Also, the wiring 33 has a region overlapping with the wiring 34, and the two are electrically connected. In one embodiment of the present invention, a region where the wiring 33 and the pixel electrode 41 (the conductive layer 41a) are connected is used as an effective region of the liquid crystal device; Use
  • the translucent conductive film preferably contains one or more selected from indium, zinc, and tin.
  • In oxide In—Sn oxide (ITO: also referred to as Indium Tin Oxide), In—Zn oxide, In—W oxide, In—W—Zn oxide, In—Ti oxide, Metal oxides such as In--Sn--Ti oxides, In--Sn--Si oxides, Zn oxides and Ga--Zn oxides are included.
  • an oxide semiconductor in which resistance is reduced by adding an impurity element to a metal oxide which also functions as a semiconductor layer of a transistor may be used.
  • the oxide semiconductor whose resistance is reduced can be called an oxide conductor (OC).
  • a donor level is formed near the conduction band by forming oxygen vacancies in an oxide semiconductor and adding hydrogen to the oxygen vacancies.
  • the oxide semiconductor has high conductivity and becomes a conductor.
  • an oxide semiconductor has a large energy gap (for example, an energy gap of 2.5 eV or more) and thus has a property of transmitting visible light.
  • the oxide conductor is an oxide semiconductor having a donor level near the conduction band. Therefore, an oxide conductor is less affected by absorption due to a donor level and has a visible light-transmitting property similar to that of an oxide semiconductor.
  • the wiring 33 can be a layer formed in the same step as the semiconductor layer 23 with a reduced resistance.
  • a liquid crystal device has a structure in which a liquid crystal layer sandwiched between a pair of alignment films is sandwiched between a pair of electrodes.
  • FIG. 1B shows the pixel electrode 41 (conductive layers 41a and 41b) as one electrode, the alignment film 45a as one alignment film, and the liquid crystal layer 40 .
  • the light-transmitting conductive film described above can be used for the pixel electrode 41 .
  • An insulating layer 51 is provided as a planarization layer over the transistor 20 , the capacitor 30 and the wiring 33 , and an opening 50 (contact hole) is formed in a region overlapping with the wiring 33 .
  • Conductive layer 41 a is formed in contact with wiring 33 exposed at the side surface of opening 50 and at the bottom of opening 50 .
  • the opening 50 has a stepped shape, but the stepped portion cannot be eliminated only by forming the conductive layer 41a. Since the insulating layer 51 is formed relatively thick as a planarizing layer, it is difficult to eliminate the step even if the film thickness of the conductive layer 41a is increased. Therefore, as shown in FIG. 1B, an insulating layer 52 is formed in contact with the conductive layer 41a so as to eliminate the step due to the opening 50. Then, as shown in FIG.
  • the insulating layer 52 is preferably made of an organic material that transmits visible light.
  • the organic material it is preferable to use a photosensitive organic resin, and for example, a photosensitive resin composition containing an acrylic resin is used.
  • acrylic resin does not only refer to polymethacrylate esters or methacrylic resins, but may refer to all acrylic polymers in a broad sense.
  • the insulating layer 52 can be formed in a desired region by using a photolithography process.
  • Polyimide resin epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, precursors of these resins, and the like may also be used as the insulating layer 52 .
  • the insulating layer 52 may be made of an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin.
  • the pixel electrode 41 having a flat upper surface can be formed. Therefore, a flat alignment film 45 a can be formed on the pixel electrode 41 .
  • the upper surface of the conductive layer 41a provided on the insulating layer 51 and the upper surface of the insulating layer 52 are formed so as to be level with each other.
  • the upper surface of the insulating layer 52 may have a convex shape as shown in FIG. 2A, for example, as long as the orientation defect of the liquid crystal molecules does not occur.
  • the upper surface of the insulating layer 52 may be concave as shown in FIG. 2B.
  • the step caused by the opening 50 can be eliminated, so that the alignment defect of the liquid crystal layer 40 provided on the region and the vicinity thereof can be prevented. Therefore, the effective display area of the liquid crystal device can be increased.
  • 3A and 3B show a conventional example, which is a comparative example that does not use one aspect of the present invention.
  • 3A is a top view of a plurality of adjacent pixels
  • FIG. 3B is a cross-sectional view between line segments B1-B2 shown in FIG. 3A.
  • FIG. 3A shows only the light shielding layer 44 as elements above the pixel electrode 41 for clarity.
  • the alignment film 45 b corresponds to the other of the pair of alignment films of the liquid crystal device 47 .
  • the counter electrode 42 corresponds to the other of the pair of electrodes that the liquid crystal device 47 has.
  • the colored layer 43 is a color filter for color display, and can be formed of a resin layer or the like in which pigments are dispersed.
  • the light shielding layer 44 has a function of preventing color mixture and preventing a characteristic change due to light irradiation of the transistor, and can be formed of a black resin layer or the like.
  • the alignment film 45a is formed along the step caused by the opening 50, so that the alignment of the liquid crystal molecules is disturbed on the opening 50 and its vicinity, and the liquid crystal layer 40 has an alignment defect region. 40x is produced. Therefore, it is necessary to provide the light shielding layer 44 so as to overlap with the poor alignment region 40x. That is, since the opening portion of the light shielding layer 44 is reduced, the aperture ratio is lowered.
  • FIGS. 1A, 1B and 3A, 3B are diagrams showing one aspect of the present invention.
  • 4A is a top view of a plurality of adjacent pixels
  • FIG. 4B is a cross-sectional view between line segments C1-C2 shown in FIG. 4A.
  • Elements in common with FIGS. 1A, 1B and 3A, 3B use the same reference numerals.
  • FIG. 4A shows only the light shielding layer 44 as elements above the pixel electrode 41 for clarity.
  • FIG. 4A although the structure of a stripe arrangement is illustrated as an example, a mosaic arrangement or a delta arrangement may be used.
  • the alignment film 45a is flattened even over the opening 50 by eliminating the step caused by the opening 50, the liquid crystal layer 40 on the opening 50 and its vicinity does not have a poor alignment region. .
  • the light shielding layer 44 on the opening 50 and its vicinity which is required in the conventional example, is no longer necessary.
  • the region overlapping with the opening 50 has light-transmitting properties. Therefore, the effective display area of the liquid crystal device 47 can be increased. That is, the aperture ratio can be increased.
  • the opening 50 and its vicinity have a structure in which a plurality of light-transmitting layers with different refractive indices are arranged. May reduce contrast. Therefore, the width of the opening 50 and the wiring 33 overlapping the opening 50 is preferably formed as small as possible.
  • the width of the bottom of the opening 50 viewed from above is 3 ⁇ m or less, preferably 2 ⁇ m or less, more preferably 1 ⁇ m or less.
  • the width of the wiring 33 is set to twice or less than the width of the bottom of the opening 50, preferably 1.5 times or less.
  • the L/S (line and space) resolution is 1.5 ⁇ m or less, preferably 1.2 ⁇ m or less, the overlay accuracy is ⁇ 0.25 ⁇ m or less,
  • a stepper for large substrates of ⁇ 0.23 ⁇ m or less for example, compatible with sixth-generation glass substrates) or the like is preferably used.
  • FIG. 5A is a perspective view showing an example of a laminated structure in which the above-mentioned liquid crystal display device and a backlight device are combined, with a part of each layer cut away.
  • FIG. 5B is a figure corresponding to the cross section of the line segment D1-D2 shown in FIG. 5A. Note that the lamination structure is an example, and layers having other functions may be incorporated in the lamination.
  • the liquid crystal display device 11 has a plurality of pixels 10, and a polarizing plate 71 is arranged on the upper surface and a polarizing plate 72 is arranged on the lower surface.
  • the backlight device 81 has a configuration in which a plurality of light emitting units 84 are arranged in a matrix.
  • the light emitting unit 84 has a light emitting diode (LED: Light Emitting Diode) 83 and a transistor 82 .
  • One light emitting unit 84 has a region overlapping with a plurality of pixels 10 .
  • Transistor 82 is a component of a circuit for actively driving light emitting diode 83 .
  • a semiconductor layer included in the transistor 82 an oxide semiconductor (metal oxide), amorphous silicon, microcrystalline silicon, polycrystalline silicon, or the like can be used.
  • FIG. 5B exemplifies the transistor 82 as a back-gate type, it may be a top-gate type or a self-aligned type.
  • the light emitting diode 83 may be passively driven. In this case, transistor 82 can be dispensed with.
  • the light-emitting diode 83 for example, it is preferable to use a micro-LED having a diameter or one side of 50 ⁇ m or less, or a mini-LED having a diameter or one side of more than 50 ⁇ m and 200 ⁇ m or less.
  • FIG. 5B illustrates a form in which the wiring of the backlight device 81 and the electrodes of the light emitting diodes 83 are directly joined, but solder, conductive resin, anisotropic conductive resin, or anisotropic conductive film You may join both via etc.
  • a color conversion layer 89 may be provided on top of the backlight device 81 . It is preferable that the color conversion layer 89 has a structure including phosphors or quantum dots (QDs). In particular, when quantum dots are used, the peak width of the emission spectrum is narrow, and light emission with good color purity can be obtained.
  • QDs quantum dots
  • white light can be obtained by using a blue light-emitting LED as the light-emitting diode 83 and using quantum dots for converting blue light into red light and green light in the color conversion layer 89 .
  • a white light emitting LED is used as the light emitting diode 83, the color conversion layer 89 may be omitted.
  • FIG. 6A is a block diagram illustrating the liquid crystal display device 11 of one embodiment of the present invention.
  • the liquid crystal display device 11 has a pixel array 13, a gate driver 91a, and a source driver 92a.
  • the pixel array 13 has pixels 10 arranged in columns and rows.
  • a sequential circuit such as a shift register can be used for the gate driver 91a and the source driver 92a.
  • the gate driver 91a and the source driver 92a can be monolithically formed on the substrate that forms the circuit that the pixel 10 has.
  • an IC chip provided with a gate driver 91a and an IC chip provided with a source driver 92a are processed by a COF (chip on film) method, a COG (chip on glass) method, a TCP (tape carrier package) method, or the like to form the pixel array 13.
  • a COF chip on film
  • COG chip on glass
  • TCP tape carrier package
  • gate driver 91a is arranged on one side of the pixel array 13
  • two gate drivers 91a may be arranged so as to face each other with the pixel array 13 interposed therebetween to divide the driving row.
  • FIG. 6B is an example of a circuit diagram of the pixel 10.
  • One of the source or drain of transistor 20 is electrically connected to one electrode of capacitor 30 and one electrode of liquid crystal device 47 .
  • a gate of the transistor 20 is electrically connected to the wiring 22 .
  • the other of the source and the drain of transistor 20 is electrically connected to wiring 21 .
  • the other electrode of capacitor 30 is electrically connected to wiring 31 that supplies a fixed potential.
  • the other electrode of liquid crystal device 47 is electrically connected to a fixed potential line.
  • the wiring 21 functions as a source line and can be electrically connected to the source driver 92a.
  • the wiring 22 functions as a gate line and can be electrically connected to the gate driver 91a.
  • FIG. 7A is a block diagram illustrating the backlight device 81 shown in FIGS. 5A and 5B.
  • the backlight device 81 has an LED array 85, a gate driver 91b and a source driver 92b.
  • the LED array 85 has light-emitting units 84 arranged in columns and rows.
  • a sequential circuit such as a shift register can be used for the gate driver 91b and the source driver 92b.
  • the gate driver 91b and the source driver 92b can be monolithically formed on the substrate that forms the circuit that the light emitting unit 84 has.
  • an IC chip provided with a gate driver 91b and an IC chip provided with a source driver 92b are subjected to the LED array 85 by a COF (chip on film) method, a COG (chip on glass) method, a TCP (tape carrier package) method, or the like. may be connected to a COF (chip on film) method, a COG (chip on glass) method, a TCP (tape carrier package) method, or the like. may be connected to
  • gate driver 91b is arranged on one side of the pixel array 13
  • two gate drivers 91b may be arranged so as to face each other with the LED array 85 interposed therebetween, and the row to be driven may be divided.
  • the gate driver 91b and the source driver 92b can be arranged in a region overlapping with the LED array 85 as shown in FIG. 7B.
  • the wiring length between the gate driver 91b and the source driver 92b and the light emitting unit 84 can be shortened, and the wiring resistance and wiring capacitance can be reduced. Therefore, high-speed operation and low power consumption can be achieved.
  • the frame can be made narrow, the backlight device 81 can be miniaturized.
  • the gate driver 91b and the source driver 92b can be formed of transistors having silicon in the channel formation region (hereinafter referred to as Si transistors). Further, the transistors (such as the transistor 82) included in the LED array 85 can be formed using transistors including an oxide semiconductor in a channel formation region (hereinafter referred to as OS transistors).
  • Si transistors Polycrystalline silicon that can be formed on a glass substrate or the like is preferably used for the Si transistor used here. Since Si transistors have high mobility, they are suitable as elements of circuits that require high-speed operation. In addition, since the OS transistor has a relatively high withstand voltage, it is suitable as a drive transistor for an LED through which a large amount of current flows.
  • FIG. 7B shows a configuration in which the gate driver 91b and the source driver 92b are divided and arranged, the number of divisions is not limited and can be set as appropriate. Also, although FIG. 7B shows an example in which the image is not divided in the horizontal direction, the image may be divided in the horizontal direction.
  • FIG. 7C shows an example of a circuit UT1 that can be applied to the light emitting unit 84.
  • the circuit UT1 has a light emitting diode LED1 (corresponding to the light emitting diode 83), a transistor M1, a transistor M2 (corresponding to the transistor 82), a transistor M3 and a capacitor C1.
  • the transistor M1 has a gate electrically connected to the wiring G1, one of the source and the drain electrically connected to the wiring S1, and the other of the source and the drain electrically connected to one electrode of the capacitor C1 and the gate of the transistor M2. connected to each other.
  • One of the source and drain of the transistor M2 is electrically connected to the wiring V2, and the other is electrically connected to the anode of the light emitting diode LED1 and one of the source and drain of the transistor M3.
  • the transistor M3 has a gate electrically connected to the wiring G2 and the other of the source and the drain electrically connected to the wiring V0.
  • a cathode of the light emitting diode LED1 is electrically connected to the wiring V1.
  • a constant potential is supplied to each of the wiring V1 and the wiring V2.
  • Light can be emitted by setting the anode side of the light emitting diode LED1 to a high potential and the cathode side to a low potential.
  • the transistor M1 is controlled by a signal supplied to the wiring G1 and functions as a selection transistor for controlling the selection state of the circuit UT1.
  • the transistor M2 also functions as a drive transistor that controls the current flowing through the light emitting diode LED1 according to the potential supplied to its gate.
  • the transistor M1 When the transistor M1 is in a conductive state, the potential supplied to the wiring S1 is supplied to the gate of the transistor M2, and the luminance of the light emitting diode LED1 can be controlled according to the potential.
  • the transistor M3 is controlled by a signal supplied to the wiring G2.
  • the potential between the transistor M3 and the light-emitting diode LED1 can be reset to a constant potential supplied from the wiring V0, and the potential to the gate of the transistor M2 can be applied while the source potential of the transistor M2 is stabilized. can be written. Note that a structure in which the transistor M3 is not provided can also be employed.
  • FIG. 7D shows an example of a circuit UT2 different from the circuit UT1.
  • Circuit UT2 has a boost function.
  • the circuit UT2 has a light emitting diode LED2 (corresponding to the light emitting diode 83), a transistor M4, a transistor M5, a transistor M6 (corresponding to the transistor 82), a transistor M7, capacitors C2 and C3.
  • the transistor M4 has a gate electrically connected to the wiring G1, one of the source and the drain electrically connected to the wiring S4, and the other of the source and the drain connected to one electrode of the capacitor C2 and one electrode of the capacitor C3. and the gate of transistor M6.
  • the transistor M5 has a gate electrically connected to the wiring G3, one of the source and the drain electrically connected to the wiring S5, and the other of the source and the drain electrically connected to the other electrode of the capacitor C3.
  • One of the source and drain of the transistor M6 is electrically connected to the wiring V2, and the other is electrically connected to the anode of the light emitting diode LED2 and one of the source and drain of the transistor M7.
  • the transistor M7 has a gate electrically connected to the wiring G2 and the other of the source and the drain electrically connected to the wiring V0.
  • a cathode of the light emitting diode LED2 is electrically connected to the wiring V1.
  • the transistor M4 is controlled by a signal supplied to the wiring G1, and the transistor M5 is controlled by a signal supplied to the wiring G3.
  • the transistor M6 functions as a drive transistor that controls the current flowing through the light emitting diode LED2 according to the potential supplied to its gate.
  • the light emission brightness of the light emitting diode LED2 can be controlled according to the potential supplied to the gate of the transistor M6.
  • the transistor M7 is controlled by a signal supplied to the wiring G2.
  • the potential between the transistor M6 and the light-emitting device EL2 can be reset to a constant potential supplied from the wiring V0, and the potential is written to the gate of the transistor M6 while the source potential of the transistor M6 is stabilized. be able to. Further, by setting the potential supplied from the wiring V0 to the same potential as that of the wiring V1 or a potential lower than that of the wiring V1, the light emission of the light emitting diode LED2 can be suppressed.
  • the gate of the transistor M6 is supplied with the potential "D1" of the line S4 through the transistor M4, and at the same timing, the other electrode of the capacitor C3 is supplied with the reference potential “ Vref " through the transistor M5. At this time, "D1- Vref " is held in the capacitor C3.
  • the gate of the transistor M6 is made floating, and the potential "D2" of the wiring S5 is supplied to the other electrode of the capacitor C3 through the transistor M5.
  • the potential "D2" is a potential for addition.
  • the potential of the gate of the transistor M6 is D1+( C3 /( C3 + C2 + CM6 ))*(D2- Vref )).
  • the value of C3 is much larger than the value of C2 + CM6
  • FIGS. 7E1 to 7E3 show the case where one light emitting diode is provided in the circuit, but as shown in FIG. 7E1, two or more light emitting diodes are connected in series. good too. Alternatively, as shown in FIG. 7E2, two or more light emitting diodes may be connected in parallel. Alternatively, as shown in FIG. 7E3, two or more light-emitting diodes connected in series may be connected in parallel. Note that the transistors shown in FIGS. 7E1 to 7E3 are the transistor M2 or the transistor M6.
  • the light emission intensity that can be controlled by one light-emitting unit 84 can be increased.
  • the light emitting area that can be controlled by one light emitting unit 84 can be expanded.
  • FIG. 7C and FIG. 7D illustrate the circuit for PAM (Pulse Amplitude Modulation) control
  • the brightness of the light-emitting diode may be controlled by a circuit for PWM (Pulse Width Modulation) control.
  • FIGS 8A to 8C are diagrams showing the structure of the liquid crystal display device 11 of one embodiment of the present invention.
  • the display portion 215 illustrated in FIG. 8A is provided with the pixel array 13 including the pixels 10 described in Embodiment 1.
  • FIG. A sealant 405 is provided so as to surround the display portion 215 provided on the substrate 61 , and the display portion 215 is sealed with the sealant 405 and the substrate 62 .
  • FIG. 8A shows an example in which each of the gate driver 91a and the source driver 92a is formed by a plurality of integrated circuits 442 provided on a printed circuit board 441.
  • the integrated circuit 442 is an IC chip and is formed using a single crystal semiconductor.
  • FPC flexible printed circuit
  • the integrated circuit 442 included in the gate driver 91 a has a function of supplying a selection signal to the display portion 215 .
  • the integrated circuit 442 included in the source driver 92 a has a function of supplying image data to the display section 215 .
  • the integrated circuit 442 is mounted on an area different from the area surrounded by the sealing material 405 on the substrate 61 .
  • the method of connecting the integrated circuit 442 is not particularly limited, and a wire bonding method, a COG (Chip On Glass) method, a TCP (Tape Carrier Package) method, a COF (Chip On Film) method, or the like can be used. can.
  • a wire bonding method a COG (Chip On Glass) method, a TCP (Tape Carrier Package) method, a COF (Chip On Film) method, or the like can be used. can.
  • FIG. 8B shows an example of mounting the integrated circuit 442 included in the source driver 92a by the COG method. Further, part or all of the driver circuit can be formed over the same substrate as the display portion 215 to form a system-on-panel.
  • FIG. 8B shows an example in which the gate driver 91a and the display section 215 are formed on the same substrate.
  • a sealing material 405 is provided so as to surround the display section 215 provided on the substrate 61 and the gate driver 91a.
  • a substrate 62 is provided on the display section 215 and the gate driver 91a. Therefore, the display section 215 and the gate driver 91a are sealed together with the display element by the substrate 61, the sealing material 405, and the substrate 62.
  • FIG. 8B shows an example in which the source driver 92a is separately formed and mounted on the substrate 61, but the configuration is not limited to this.
  • a gate driver may be separately formed and mounted, or a part of a source driver or a part of a gate driver may be separately formed and mounted.
  • the source driver 92a and the display section 215 may be formed on the same substrate.
  • the liquid crystal display device 11 may include a panel in which a display element is sealed, and a module in which an IC including a controller is mounted on the panel.
  • the structure of the transistor included in the peripheral driver circuit and the transistor included in the pixel circuit of the display portion may be the same or different.
  • the transistors included in the peripheral driver circuit may all have the same structure, or two or more types of structures may be used in combination.
  • the transistors included in the pixel circuit may all have the same structure, or two or more types of structures may be used in combination.
  • An input device can also be provided on the substrate 62 .
  • the configuration in which the liquid crystal display device 11 shown in FIGS. 8A to 8C is provided with an input device can function as a touch panel.
  • sensing element also referred to as a sensor element
  • Various sensors capable of detecting the proximity or contact of objects to be detected such as fingers and styluses can be applied as sensing elements.
  • various systems such as an electrostatic capacity system, a resistive film system, a surface acoustic wave system, an infrared system, an optical system, and a pressure-sensitive system can be used.
  • FIG. 9 is a cross-sectional view of the portion indicated by the line segment N1-N2 in the liquid crystal display device 11 shown in FIG. 8B.
  • the display portion 215 and the gate driver 91a provided over the substrate 61 include a plurality of transistors and the like. In FIG. is exemplified. Although bottom-gate transistors are illustrated as the transistors 20 and 25 in FIG. 9, they may be top-gate transistors.
  • the transistors 20 and 25 are provided over the insulating layer 53 , and the insulating layer 51 is provided over the transistors 20 and 25 .
  • Transistors 20 and 25 have electrodes 27 formed on insulating layer 54 .
  • the insulating layer 54 can function as a gate insulating film, and the electrode 27 can function as a back gate electrode.
  • a transistor 20 provided in the display portion 215 is electrically connected to the liquid crystal device 47 .
  • Liquid crystal devices to which various modes are applied can be used as the liquid crystal device 47 .
  • VA Very Alignment
  • TN Transmission Nematic
  • IPS In-Plane-Switching
  • ASM Addressially Symmetrically aligned Micro-cell
  • OCB Optically Compensated Bend
  • FLC Fluorescence Ctric Liquid Crystal
  • AFLC Anti-Ferroelectric Liquid Crystal
  • ECB Electrode Controlled Birefringence
  • a normally black type liquid crystal display device for example, a transmissive liquid crystal display device employing a vertical alignment (VA) mode may be applied to the liquid crystal display device 11 shown in the present embodiment.
  • VA vertical alignment
  • an MVA (Multi-Domain Vertical Alignment) mode a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.
  • a liquid crystal device is an element that controls transmission or non-transmission of light by the optical modulation action of liquid crystal.
  • the optical modulation action of liquid crystals is controlled by electric fields (including lateral, vertical, or oblique electric fields) applied to the liquid crystal.
  • Liquid crystals used in liquid crystal devices include thermotropic liquid crystals, low-molecular-weight liquid crystals, polymer liquid crystals, polymer-dispersed liquid crystals (PDLC: Polymer Dispersed Liquid Crystal), polymer network liquid crystals (PNLC: Polymer Network Liquid Crystal), and ferroelectric liquid crystals.
  • PDLC Polymer Dispersed Liquid Crystal
  • PNLC Polymer Network Liquid Crystal
  • ferroelectric liquid crystals ferroelectric liquid crystals.
  • liquid crystal, antiferroelectric liquid crystal, or the like can be used. These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase,
  • FIG. 9 shows an example of a liquid crystal display device including a vertical electric field liquid crystal device
  • one embodiment of the present invention can also be applied to a liquid crystal display device including a horizontal electric field liquid crystal device.
  • liquid crystal exhibiting a blue phase without using an alignment film may be used.
  • the blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the cholesteric phase transitions to the isotropic phase when the temperature of the cholesteric liquid crystal is increased. Since the blue phase is expressed only in a narrow temperature range, a liquid crystal composition mixed with 5% by weight or more of a chiral agent is used for the liquid crystal layer in order to improve the temperature range.
  • a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and exhibits optical isotropy. Further, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. In addition, since rubbing treatment is not required because an alignment film is not required, electrostatic breakdown caused by rubbing treatment can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .
  • a spacer 65 is a columnar spacer obtained by selectively etching an insulating layer, and is provided to control the interval (cell gap) between the pixel electrode 41 and the counter electrode 42 .
  • a spherical spacer may be used.
  • the liquid crystal display device 11 has a light shielding layer 44 , a colored layer 43 and an insulating layer 48 between the substrate 62 and the counter electrode 42 .
  • the light shielding layer 44 may be a film containing a resin material, or a thin film of an inorganic material such as metal.
  • a laminated film of films containing the material of the colored layer 43 can also be used for the light shielding layer 44 .
  • a layered structure of a film containing a material used for the colored layer 43 that transmits light of a certain color and a film containing a material used for the colored layer 43 that transmits light of another color can be used.
  • Materials that can be used for the colored layer 43 include metal materials, resin materials, and resin materials containing pigments or dyes. By appropriately selecting and using the material, light of R (red), G (green), B (blue), or the like can be generated, and full-color display can be performed.
  • a color conversion layer containing a semiconductor material may be used. For example, when light of a certain wavelength is incident on a layer containing a nano-sized semiconductor, it can be converted into light of another wavelength.
  • the wavelength of the light emitted by the semiconductor is determined by the energy gap of the semiconductor material.
  • electrons, holes, or excitons are confined inside, resulting in discrete energy states and an energy shift. do. Therefore, the wavelength of light emitted by the semiconductor also changes.
  • quantum dots Such nano-sized semiconductors are called quantum dots. Since the amount of energy shift depends on the size of the quantum dots, the emission wavelength can be easily adjusted by adjusting the size of the quantum dots. In addition, the quantum dots have a narrow peak width in the emission spectrum because their discreteness limits phase relaxation, so that emission with good color purity can be obtained. Therefore, a color conversion layer having quantum dots can be used as an alternative to the colored layer 43 .
  • an FPC 418 for signal or power input is electrically connected to the electrode 29 via an anisotropic conductive layer 419 .
  • the electrode 29 is electrically connected to the wiring 28 through openings formed in the insulating layers 51 and 54 .
  • the wiring 28 is for supplying various signals and potentials to the gate driver 91a and the source driver 92a.
  • the electrode 29 can be formed of the same conductive layer as the pixel electrode 41 (conductive layers 41a and 41b). Further, the wiring 28 can be formed using the same conductive layer as the source and drain electrodes of the transistors 20 and 25 .
  • a polarizing plate 71 is provided on the surface of the substrate 61 and a polarizing plate 72 is provided on the surface of the substrate 62 .
  • FIG. 10 is a sectional view of a display device in which the configuration of the backlight device 81 shown in FIG. 7B and the liquid crystal display device 11 are combined.
  • the descriptions of FIGS. 5B, 7B and 9 can be referred to.
  • a gate driver 91b and a source driver 92b are arranged below the light-emitting unit 84 of the backlight device 81 .
  • the gate driver 91b and the source driver 92b show an example formed of Si transistors. Note that one or both of the gate driver 91b and the source driver 92b can be formed using OS transistors.
  • Amorphous silicon, microcrystalline silicon, polycrystalline silicon, or the like can be used for the channel formation region of the Si transistor. Note that in the case of providing a transistor over an insulating surface such as a glass substrate, polycrystalline silicon is preferably used.
  • High-quality polycrystalline silicon can be easily obtained by using a laser crystallization process or the like.
  • High-quality polycrystalline silicon can also be obtained by a solid-phase growth method in which a metal catalyst such as nickel or palladium is added to amorphous silicon and heated.
  • a metal catalyst such as nickel or palladium
  • polycrystalline silicon formed by solid phase growth using a metal catalyst may be irradiated with a laser to further increase the crystallinity. Note that since the metal catalyst remains in the polycrystalline silicon and deteriorates the electrical characteristics of the transistor, it is preferable to provide a region to which phosphorus or a noble gas is added in addition to the channel formation region so that the metal catalyst is trapped in the region. .
  • a transistor 86 included in the gate driver 91b can be connected to a gate line included in the light emitting unit 84 . Further, the transistor 87 included in the source driver 92b can be electrically connected to the transistor 88 included in the light emitting unit 84. Transistor 88 corresponds to transistor M1 shown in FIG. 7C or transistor M4 shown in FIG. 7D.
  • an FPC 458 for signal or power input is electrically connected to the electrode 461 through an anisotropic conductive layer 459 .
  • the electrode 461 is electrically connected to the wiring 462 through an opening formed in the insulating layer.
  • the wiring 462 is a wiring for supplying various signals and potentials to the gate driver 91b and the source driver 92b.
  • the electrode 461 can be formed using the same conductive layer as the gate line of the light emitting unit 84 . Further, the wiring 462 can be formed using the same conductive layer as the source and drain wirings of the transistors 86 and 87, and the like.
  • FIG. 11A shows details of an OS transistor that can be applied to the liquid crystal display device 11 and the light emitting unit 84.
  • FIG. The OS transistor illustrated in FIG. 11A has a bottom-gate structure.
  • the OS transistor can have a structure including an oxide semiconductor layer 703 , a gate electrode 701 a , a gate electrode 701 b , a gate insulating film 702 , a gate insulating film 708 , a source electrode 704 , and a drain electrode 705 .
  • the oxide semiconductor layer may have a structure in which a plurality of semiconductor layers with different band gaps are stacked.
  • the OS transistor may have a self-aligned structure in which a source region 706 and a drain region 707 are formed in the oxide semiconductor layer 703 using the gate electrode 701a as a mask, as illustrated in FIG. 11B.
  • FIG. 11C it may be a non-self-aligned top-gate transistor having a region where the gate electrode 701a and the source electrode 704 and the drain electrode 705 overlap.
  • FIG. 11D is a cross-sectional view of B1-B2 shown in FIG. 11A.
  • the gate electrode 701b may be electrically connected to the gate electrode 701a (front gate) of the transistor provided to face it. With such a configuration, the ON current can be increased.
  • a structure in which the gate electrode 701b is not connected to the gate electrode 701a and a fixed potential can be supplied to the gate electrode 701b may be employed. With such a structure, the threshold voltage can be adjusted.
  • a structure in which the gate electrode 701b is not provided may be employed.
  • an OS transistor Since an OS transistor has a large energy gap in a semiconductor layer, it can exhibit extremely low off-current characteristics of several yA/ ⁇ m (current value per 1 ⁇ m of channel width). A low off-state current can increase the ability to hold the potential of a node; therefore, an appropriate image can be displayed even when the frame frequency is lowered.
  • the first frame frequency eg, 60 Hz or higher
  • the frame frequency is switched to a second frame frequency that is lower than the first frame frequency (eg, about 1 to 10 Hz). Accordingly, power consumption of the display device can be reduced.
  • the OS transistor since the OS transistor has better drain current saturation characteristics than the Si transistor even if the channel length is short, it is suitable for use as the driving transistor (transistor 82 ) of the light emitting diode 83 .
  • a metal oxide with an energy gap of 2 eV or more, preferably 2.5 eV or more, more preferably 3 eV or more can be used.
  • an oxide semiconductor containing indium or the like is used, and for example, CAAC-OS or CAC-OS, which will be described later, can be used.
  • a CAAC-OS has stable atoms forming a crystal, and is suitable for a transistor or the like in which reliability is important.
  • CAC-OS exhibits high mobility characteristics, it is suitable for high-speed transistors and the like.
  • OS transistors have different characteristics from transistors having silicon in the channel region (hereafter referred to as Si transistors), such as impact ionization, avalanche breakdown, short-channel effects, etc., and they can form highly reliable circuits. can.
  • a semiconductor layer included in an OS transistor is, for example, an In-M-Zn-based oxide containing indium, zinc, and M (a metal such as aluminum, titanium, gallium, germanium, yttrium, zirconium, lanthanum, cerium, tin, neodymium, or hafnium). It can be a film represented by An In-M-Zn-based oxide can typically be formed by a sputtering method. Alternatively, it may be formed using an ALD (atomic layer deposition) method.
  • ALD atomic layer deposition
  • the atomic ratio of the metal elements in the sputtering target used for forming the In-M-Zn-based oxide by sputtering preferably satisfies In ⁇ M and Zn ⁇ M.
  • the atomic ratio of the semiconductor layers to be deposited includes a variation of plus or minus 40% of the atomic ratio of the metal element contained in the sputtering target.
  • an oxide semiconductor with a low carrier concentration is used for the semiconductor layer.
  • the semiconductor layer has a carrier concentration of 1 ⁇ 10 17 /cm 3 or less, preferably 1 ⁇ 10 15 /cm 3 or less, more preferably 1 ⁇ 10 13 /cm 3 or less, more preferably 1 ⁇ 10 11 /cm 3 or less. 3 or less, more preferably less than 1 ⁇ 10 10 /cm 3 , and an oxide semiconductor with 1 ⁇ 10 ⁇ 9 /cm 3 or more can be used.
  • Such an oxide semiconductor is called a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor.
  • the oxide semiconductor can be said to have a low defect state density and stable characteristics.
  • the oxide semiconductor is not limited to these, and an oxide semiconductor having an appropriate composition may be used according to required semiconductor characteristics and electrical characteristics (field-effect mobility, threshold voltage, and the like) of the transistor.
  • the semiconductor layer has appropriate carrier concentration, impurity concentration, defect density, atomic ratio of metal elements and oxygen, interatomic distance, density, and the like. .
  • the concentration of silicon or carbon in the semiconductor layer is set to 2 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 17 atoms/cm 3 or less.
  • the concentration of the alkali metal or alkaline earth metal in the semiconductor layer is 1 ⁇ 10 18 atoms/cm 3 or less, preferably 2 ⁇ 10 16 atoms/cm 3 or less.
  • the nitrogen concentration (concentration obtained by secondary ion mass spectrometry) in the semiconductor layer is preferably 5 ⁇ 10 18 atoms/cm 3 or less.
  • an oxide semiconductor included in a semiconductor layer contains hydrogen
  • hydrogen reacts with oxygen that bonds to a metal atom to form water, which may cause oxygen vacancies in the oxide semiconductor.
  • oxygen vacancies are included in a channel formation region in the oxide semiconductor, the transistor may have normally-on characteristics.
  • part of hydrogen may bond with oxygen that bonds with a metal atom to generate an electron that is a carrier. Therefore, a transistor including an oxide semiconductor containing a large amount of hydrogen is likely to be normally on.
  • a defect in which hydrogen enters an oxygen vacancy can function as a donor of an oxide semiconductor.
  • the oxide semiconductor is evaluated based on the carrier concentration instead of the donor concentration. Therefore, in this specification and the like, instead of the donor concentration, the carrier concentration assuming a state in which no electric field is applied is used as a parameter of the oxide semiconductor in some cases.
  • the “carrier concentration” described in this specification and the like may be rephrased as “donor concentration”.
  • the hydrogen concentration obtained by secondary ion mass spectrometry is less than 1 ⁇ 10 20 atoms/cm 3 , preferably 1 ⁇ 10 19 atoms/cm. It is less than 3 , more preferably less than 5 ⁇ 10 18 atoms/cm 3 , still more preferably less than 1 ⁇ 10 18 atoms/cm 3 .
  • the semiconductor layer may also have a non-single-crystal structure, for example.
  • Non-single-crystal structures include, for example, CAAC-OS (C-Axis Aligned Crystalline Oxide Semiconductor) having crystals oriented along the c-axis, polycrystalline structures, microcrystalline structures, or amorphous structures.
  • CAAC-OS C-Axis Aligned Crystalline Oxide Semiconductor
  • the amorphous structure has the highest defect level density
  • the CAAC-OS has the lowest defect level density.
  • An oxide semiconductor film having an amorphous structure for example, has disordered atomic arrangement and no crystalline component.
  • an oxide film with an amorphous structure for example, has a completely amorphous structure and does not have a crystal part.
  • the semiconductor layer is a mixed film containing two or more of an amorphous region, a microcrystalline region, a polycrystalline region, a CAAC-OS region, and a single crystal region, good.
  • the mixed film may have, for example, a single-layer structure or a laminated structure containing two or more of the above-described regions.
  • CAC Cloud-Aligned Composite
  • a CAC-OS is, for example, one structure of a material in which elements constituting an oxide semiconductor are unevenly distributed with a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm, or in the vicinity thereof.
  • the oxide semiconductor one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less, or a size in the vicinity thereof.
  • the mixed state is also called mosaic or patch.
  • the oxide semiconductor preferably contains at least indium. Indium and zinc are particularly preferred. Also, in addition to them, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc. may contain one or more selected from
  • CAC-OS in In-Ga-Zn oxide is indium oxide (hereinafter, InO X1 (X1 is a real number greater than 0), or indium zinc oxide (hereinafter referred to as In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0)) and gallium oxide (hereinafter referred to as GaO X3 (X3 is a real number greater than 0)) or gallium zinc oxide (hereinafter Ga X4 Zn Y4 O Z4 (X4, Y4, and Z4 are real numbers greater than 0); ) and so on, the material is separated into a mosaic shape, and the mosaic InO X1 or In X2 Zn Y2 O Z2 is uniformly distributed in the film (hereinafter also referred to as a cloud shape).
  • CAC-OS is a composite oxide semiconductor having a structure in which a region containing GaO X3 as its main component and a region containing In X2 ZnY2 O Z2 or InO X1 as its main component are mixed.
  • the first region means that the atomic ratio of In to the element M in the first region is greater than the atomic ratio of In to the element M in the second region. Assume that the concentration of In is higher than that of the region No. 2.
  • IGZO is a common name, and may refer to one compound of In, Ga, Zn, and O. As a representative example, it is represented by InGaO3 (ZnO) m1 (m1 is a natural number) or In (1+x0) Ga (1-x0) O3 (ZnO) m0 (-1 ⁇ x0 ⁇ 1, m0 is an arbitrary number). Crystalline compounds are mentioned.
  • the crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure.
  • the CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have c-axis orientation and are connected without being oriented on the ab plane.
  • CAC-OS relates to the material composition of oxide semiconductors.
  • CAC-OS refers to a material structure containing In, Ga, Zn, and O, in which a region that is partly observed as nanoparticles containing Ga as the main component and a part that is partly composed of nanoparticles containing In as the main component.
  • the regions observed in a pattern refer to a configuration in which regions are randomly dispersed in a mosaic pattern. Therefore, in CAC-OS, the crystal structure is a secondary factor.
  • CAC-OS does not include a stacked structure of two or more films with different compositions. For example, it does not include a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component.
  • a clear boundary cannot be observed between a region containing GaO X3 as a main component and a region containing In X2 ZnY2 O Z2 or InO X1 as a main component.
  • the CAC-OS contains one or more kinds of metal elements
  • the CAC-OS consists of a region that is partly observed as nanoparticles containing the metal element as a main component and a part that is observed as nanoparticles containing In as a main component.
  • the regions observed as particles refer to a configuration in which the regions are randomly dispersed in a mosaic pattern.
  • the CAC-OS can be formed, for example, by a sputtering method under conditions in which the substrate is not intentionally heated.
  • a sputtering method one or more selected from an inert gas (typically argon), oxygen gas, and nitrogen gas may be used as the film forming gas. good.
  • an inert gas typically argon
  • oxygen gas oxygen gas
  • nitrogen gas nitrogen gas
  • the flow rate ratio of oxygen gas to the total flow rate of film formation gas during film formation is preferably as low as possible. .
  • CAC-OS is characterized by the fact that no clear peaks are observed when measured using ⁇ /2 ⁇ scanning by the out-of-plane method, which is one of X-ray diffraction (XRD) measurement methods. have. That is, it can be seen from the X-ray diffraction measurement that no orientation in the a-b plane direction and c-axis direction of the measurement region is observed.
  • XRD X-ray diffraction
  • CAC-OS has an electron beam diffraction pattern obtained by irradiating an electron beam with a probe diameter of 1 nm (also referred to as a nanobeam electron beam). A plurality of bright spots are observed in . Therefore, from the electron diffraction pattern, it is found that the crystal structure of CAC-OS has an nc (nano-crystal) structure with no orientation in the planar direction and the cross-sectional direction.
  • GaO X3 is the main component by EDX mapping obtained using energy dispersive X-ray spectroscopy (EDX). It can be confirmed that the region and the region containing In X2 Zn Y2 O Z2 or InO X1 as a main component are unevenly distributed and have a mixed structure.
  • EDX energy dispersive X-ray spectroscopy
  • CAC-OS has a structure different from that of an IGZO compound in which metal elements are uniformly distributed, and has properties different from those of an IGZO compound. That is, the CAC-OS is phase-separated into a region containing GaO X3 or the like as a main component and a region containing In X2 Zn Y2 O Z2 or InO X1 as a main component, and a region containing each element as a main component. has a mosaic structure.
  • the region containing In X2 Zn Y2 O Z2 or InO X1 as the main component has higher conductivity than the region containing GaO X3 or the like as the main component. That is, when carriers flow through a region containing In X2 Zn Y2 O Z2 or InO X1 as a main component, conductivity as an oxide semiconductor is exhibited. Therefore, when regions containing In X2 Zn Y2 O Z2 or InO X1 as a main component are distributed in a cloud shape in the oxide semiconductor, high field-effect mobility ( ⁇ ) can be realized.
  • a region containing GaO 2 X3 or the like as a main component has higher insulating properties than a region containing In X2 Zn Y2 O Z2 or InO 2 X1 as a main component. That is, by distributing a region containing GaOx3 or the like as a main component in the oxide semiconductor, leakage current can be suppressed and favorable switching operation can be realized.
  • the insulating property caused by GaO X3 and the like and the conductivity caused by In X2 Zn Y2 O Z2 or InO X1 act complementarily, resulting in high On-current (I on ) and high field effect mobility ( ⁇ ) can be achieved.
  • CAC-OS is suitable as a constituent material for various semiconductor devices.
  • Examples of electronic devices in which the display device according to one embodiment of the present invention can be used include display devices, personal computers, image storage devices or image playback devices provided with a recording medium, mobile phones, game machines including portable types, and portable data terminals.
  • E-book terminals video cameras, cameras such as digital cameras, goggle-type displays (head-mounted displays), navigation systems, sound playback devices (car audio, digital audio players, etc.), copiers, facsimiles, printers, multi-function printers, Automatic teller machines (ATMs), vending machines, and the like are included.
  • FIG. 12A shows a digital camera including a housing 961, a shutter button 962, a microphone 963, a speaker 967, a display portion 965, operation keys 966, a zoom lever 968, a lens 969, and the like.
  • the display device of one embodiment of the present invention can be used for the display portion 965 .
  • FIG. 12B shows a portable data terminal including a housing 911, a display portion 912, a speaker 913, operation buttons 914, a camera 919, and the like. Information can be input/output using the touch panel function of the display portion 912 .
  • the display device of one embodiment of the present invention can be used for the display portion 912 .
  • FIG. 12C shows a drive recorder including a housing 931, a display portion 932, operation buttons 933, a microphone 934, a lens 935, mounting parts 936, and the like.
  • a drive recorder including a housing 931, a display portion 932, operation buttons 933, a microphone 934, a lens 935, mounting parts 936, and the like.
  • FIG. 12D shows a television including a housing 971, a display portion 973, operation buttons 974, a speaker 975, communication connection terminals 976, an optical sensor 977, and the like.
  • a touch sensor is provided in the display portion 973, and an input operation can be performed.
  • the display device of one embodiment of the present invention can be used for the display portion 973 .
  • FIG. 12E is a digital signage having a large display 922.
  • the digital signage has a large display unit 922 attached to the side of a pillar 921, for example.
  • the display device of one embodiment of the present invention can be used for the display portion 922 .

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
PCT/IB2022/061010 2021-11-26 2022-11-16 表示装置および電子機器 Ceased WO2023094937A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2023563352A JPWO2023094937A1 (https=) 2021-11-26 2022-11-16
CN202280077740.8A CN118284849A (zh) 2021-11-26 2022-11-16 显示装置及电子设备
US18/710,360 US20250004337A1 (en) 2021-11-26 2022-11-16 Display device and electronic device
KR1020247020088A KR20240112305A (ko) 2021-11-26 2022-11-16 표시 장치 및 전자 기기

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-191975 2021-11-26
JP2021191975 2021-11-26

Publications (1)

Publication Number Publication Date
WO2023094937A1 true WO2023094937A1 (ja) 2023-06-01

Family

ID=86538908

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2022/061010 Ceased WO2023094937A1 (ja) 2021-11-26 2022-11-16 表示装置および電子機器

Country Status (5)

Country Link
US (1) US20250004337A1 (https=)
JP (1) JPWO2023094937A1 (https=)
KR (1) KR20240112305A (https=)
CN (1) CN118284849A (https=)
WO (1) WO2023094937A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452713A (zh) * 2023-10-12 2024-01-26 深圳市唯酷光电有限公司 液晶手写膜

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09304793A (ja) * 1996-03-15 1997-11-28 Sharp Corp アクティブマトリクス基板およびアクティブマトリクス基板の製造方法、ならびに液晶表示装置
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2020531904A (ja) * 2017-08-24 2020-11-05 コーニング インコーポレイテッド 高ダイナミックレンジのマイクロｌｅｄバックライティングシステムおよび方法
JP2021179525A (ja) * 2020-05-13 2021-11-18 凸版印刷株式会社 表示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3576871B2 (ja) * 1999-06-04 2004-10-13 日本電気株式会社 アクティブマトリクス型液晶表示装置
KR101133761B1 (ko) * 2005-01-26 2012-04-09 삼성전자주식회사 액정 표시 장치
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
CN104820324A (zh) * 2014-01-31 2015-08-05 Jsr株式会社 液晶显示元件及感放射线性树脂组合物
JP2017067828A (ja) * 2015-09-28 2017-04-06 株式会社ジャパンディスプレイ 液晶表示装置
US10466534B2 (en) * 2016-05-06 2019-11-05 Sharp Kabushiki Kaisha Backlight device, and display apparatus including same
KR102405404B1 (ko) * 2017-06-13 2022-06-07 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
US11037980B2 (en) * 2018-08-10 2021-06-15 Sharp Kabushiki Kaisha Image display device
US11710760B2 (en) * 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
CN113711363A (zh) * 2019-08-27 2021-11-26 株式会社半导体能源研究所 半导体装置及其制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09304793A (ja) * 1996-03-15 1997-11-28 Sharp Corp アクティブマトリクス基板およびアクティブマトリクス基板の製造方法、ならびに液晶表示装置
JPH1138440A (ja) * 1997-07-17 1999-02-12 Sharp Corp アクティブマトリクス型液晶表示装置およびその製造方法
JP2020531904A (ja) * 2017-08-24 2020-11-05 コーニング インコーポレイテッド 高ダイナミックレンジのマイクロｌｅｄバックライティングシステムおよび方法
JP2021179525A (ja) * 2020-05-13 2021-11-18 凸版印刷株式会社 表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117452713A (zh) * 2023-10-12 2024-01-26 深圳市唯酷光电有限公司 液晶手写膜

Also Published As

Publication number Publication date
CN118284849A (zh) 2024-07-02
KR20240112305A (ko) 2024-07-18
US20250004337A1 (en) 2025-01-02
JPWO2023094937A1 (https=) 2023-06-01

Similar Documents

Publication Publication Date Title
JP7488927B2 (ja) 表示装置
US12106729B2 (en) Display device and electronic device
US12039952B2 (en) Display apparatus and electronic device
US11715435B2 (en) Display apparatus and electronic device
US12260838B2 (en) Display apparatus and electronic device
JP7689595B2 (ja) 表示装置
JP7487111B2 (ja) 表示装置および電子機器
US20250076716A1 (en) Display apparatus and electronic device
WO2023094937A1 (ja) 表示装置および電子機器
US11435637B2 (en) Display apparatus and electronic device
JP7176864B2 (ja) 表示装置および電子機器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22898025

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2023563352

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 18710360

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 202280077740.8

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 20247020088

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020247020088

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22898025

Country of ref document: EP

Kind code of ref document: A1