WO2023090250A1 - フィルタ装置、アンテナ装置、およびアンテナモジュール - Google Patents

フィルタ装置、アンテナ装置、およびアンテナモジュール Download PDF

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Publication number
WO2023090250A1
WO2023090250A1 PCT/JP2022/041921 JP2022041921W WO2023090250A1 WO 2023090250 A1 WO2023090250 A1 WO 2023090250A1 JP 2022041921 W JP2022041921 W JP 2022041921W WO 2023090250 A1 WO2023090250 A1 WO 2023090250A1
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Prior art keywords
filter device
inductor
frequency
resonance frequency
capacitor
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PCT/JP2022/041921
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English (en)
French (fr)
Japanese (ja)
Inventor
真也 立花
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to CN202280062365.XA priority Critical patent/CN117941254A/zh
Priority to JP2023561561A priority patent/JP7622871B2/ja
Publication of WO2023090250A1 publication Critical patent/WO2023090250A1/ja
Priority to US18/596,816 priority patent/US12555900B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H5/00—One-port networks comprising only passive electrical elements as network components
    • H03H5/02—One-port networks comprising only passive electrical elements as network components without voltage- or current-dependent elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/09—Filters comprising mutual inductance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/175—Series LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets

Definitions

  • the present disclosure relates to a filter device, an antenna device, and an antenna module, and more specifically to techniques for reducing signal loss.
  • a filter device such as a band-stop filter or a band-pass filter is provided in the high-frequency circuit.
  • a filter device provided in a high frequency circuit there is a filter device disclosed in Japanese Patent No. 6531824 (Patent Document 1).
  • the filter device disclosed in Patent Document 1 includes a first inductor and a first capacitor forming a first series circuit, and a second inductor connected in parallel to the first series circuit.
  • the present disclosure has been made to solve such problems, and the purpose thereof is to reduce signal loss in a frequency band lower than the attenuation band of parallel resonance in a filter device for high frequency signals. .
  • a filter device includes a first series resonator that series-resonates at a first resonance frequency by a first inductor and a first capacitor that is connected in series with the first inductor, a second inductor, and a second inductor. and a second series resonator that series-resonates at a second resonance frequency with the second capacitor connected in series with.
  • a first series resonator and a second series resonator are connected in parallel and parallel-resonate at a third resonance frequency, the second resonance frequency being lower than the first resonance frequency, and the third resonance frequency being equal to the first resonance frequency. frequency and the second resonant frequency.
  • the first series resonator, the second inductor, and the second capacitor perform series resonance at the first resonance frequency by the first inductor and the first capacitor at the second resonance frequency.
  • a second series resonator that performs series resonance wherein the first series resonator and the second series resonator are connected in parallel and configured to parallel-resonate at a third resonance frequency in a third frequency band.
  • FIG. 1 is a diagram showing a configuration of an antenna device according to Embodiment 1;
  • FIG. 4 is a diagram showing an example of reactance characteristics of the filter device according to Embodiment 1;
  • FIG. 4 is a diagram showing an example of insertion loss of the filter device according to Embodiment 1;
  • FIG. 8A and 8B are a circuit diagram and an equivalent circuit diagram of a filter device according to Embodiment 2;
  • FIG. FIG. 10 is a diagram showing an example of reactance characteristics of a filter device according to Embodiment 2;
  • FIG. 10 is a diagram showing an example of insertion loss of the filter device according to Embodiment 2;
  • FIG. 7 is an enlarged view along the vertical axis of the area shown in FIG. 6;
  • FIG. 7 is an enlarged view along the vertical axis of the area shown in FIG. 6;
  • FIG. 10 is a diagram showing an example of reactance characteristics of a filter device according to Embodiment 2;
  • FIG. 10 is a diagram showing an example of insertion loss of the filter device according to Embodiment 2;
  • FIG. 10 is an enlarged view along the vertical axis of the area shown in FIG. 9;
  • FIG. 10 is a diagram showing an example of reactance characteristics of a filter device according to Modification 1 of Embodiment 2;
  • FIG. 11 is a circuit diagram of a filter device according to Modification 2 of Embodiment 2;
  • FIG. 10 is a diagram showing an example of reactance characteristics of a filter device according to Modification 2 of Embodiment 2;
  • FIG. 10 is a diagram showing an example of insertion loss of a filter device according to Modification 2 of Embodiment 2;
  • FIG. 17 is an enlarged view along the vertical axis of the area shown in FIG. 16; It is a figure which shows the structure of the antenna apparatus in another modification.
  • FIG. 10 is a diagram showing the configuration of an antenna module according to Embodiment 3;
  • FIG. 11 is an external view of an antenna module according to Embodiment 3;
  • FIG. 11 is a circuit diagram of a filter device according to Embodiment 4;
  • FIG. 5 is a diagram showing an example of changes in reactance characteristics before and after adding an inductor;
  • FIG. 5 is a diagram showing an example of changes in insertion loss before and after adding an inductor;
  • FIG. 5 is a diagram showing an example of changes in reactance characteristics before and after adding an inductor;
  • FIG. 5 is a diagram showing an example of changes in insertion loss before and after adding an inductor;
  • FIG. 11 is a circuit diagram of a filter device according to Embodiment 5;
  • FIG. 5 is a diagram showing an example of changes in reactance characteristics before and after adding a capacitor;
  • FIG. 4 is a diagram showing an example of changes in insertion loss before and after adding a capacitor;
  • FIG. 5 is a diagram showing an example of changes in reactance characteristics before and after adding a capacitor;
  • FIG. 4 is a diagram showing an example of changes in insertion loss before and after adding a capacitor;
  • FIG. 1 is a diagram showing the configuration of an antenna device 1000 according to Embodiment 1.
  • Antenna device 1000 includes a feeding circuit RF1, a filter device 100, and an antenna 155.
  • FIG. Antenna device 1000 is installed in, for example, a mobile terminal such as a mobile phone, a smart phone, or a tablet, or a communication device such as a personal computer having a communication function.
  • the feeding circuit RF1 supplies the antenna 155 with a high-frequency signal in the f1-band frequency band and a high-frequency signal in the f2-band frequency band.
  • the antenna 155 can radiate into the air, as radio waves, the f1 band high frequency signal and the f2 band high frequency signal supplied from the feeding circuit RF1.
  • the frequency band of the f1 band is, for example, the 5 GHz band (5.15-5.7 GHz) of Wi-Fi (registered trademark).
  • the frequency band of the f2 band is, for example, the 2.4 GHz band (2.4-2.5 GHz) of Wi-Fi (registered trademark).
  • Antenna 155 is, for example, a monopole antenna.
  • the filter device 100 is a trap filter that prevents passage of high-frequency signals in a specific frequency band and attenuates them.
  • Filter device 100 is also referred to as a band-eliminating filter.
  • the filter device 100 according to Embodiment 1 is configured to attenuate high frequency signals in the f3 frequency band.
  • the frequency band of the f3 band includes, for example, 5G-NR (New Radio) n77 (3.3-4.2 GHz) and n78 (3.3-3.8 GHz).
  • the f1 band to the f3 band are adjacent frequency bands. Whether or not frequency bands are contiguous can be determined using the bandwidth and the center frequency for that bandwidth. For example, if the bandwidth between the frequency edge of the f1 band and the frequency edge of the f2 band and the ratio of the center frequency to the bandwidth are within a predetermined range, it is determined that the f1 band and the f2 band are close to each other. It should be noted that other methods may be used to determine whether or not the frequency bands are close to each other.
  • the f1 band and the f2 band are passbands
  • the f3 band is an attenuation band.
  • the filter device 100 shown in FIG. 1 has a terminal P1 and a terminal P2.
  • the terminal P1 is a terminal for connecting the filter device 100 to the transmission line on the power supply circuit RF1 side.
  • Terminal P2 is a terminal for connecting filter device 100 to a transmission line on the antenna 155 side.
  • the terminal P1 When the feed circuit RF1 supplies a high frequency signal to the antenna 155 through the filter device 100, the terminal P1 becomes an input terminal and the terminal P2 becomes an output terminal.
  • the terminal P1 When the high-frequency signal received by the antenna 155 is transmitted to the circuit on the power supply circuit RF1 side through the filter device 100, the terminal P1 becomes an output terminal and the terminal P2 becomes an input terminal.
  • the filter device 100 does not have a ground electrode, does not need to consider the influence of the wiring pattern, and can be easily mounted on each device.
  • the filter device 100 includes an inductor L1, a capacitor C1, an inductor L2, and a capacitor C2 as shown in FIG.
  • the LC series resonator RC1 is an LC series resonator formed by connecting an inductor L1 and a capacitor C1 in series.
  • the LC series resonator RC2 is an LC series resonator formed by connecting an inductor L2 and a capacitor C2 in series.
  • the LC series resonator RC1 and the LC series resonator RC2 are connected in parallel.
  • the LC parallel resonator RC3 is an LC parallel resonator formed by connecting the LC series resonator RC1 and the LC series resonator RC2 in parallel.
  • LC series resonator RC1, LC series resonator RC2, and LC parallel resonator RC3 are arranged between terminal P1 and terminal P2.
  • FIG. 2 is a diagram showing an example of reactance characteristics of the filter device 100 according to Embodiment 1.
  • FIG. 2 the horizontal axis is frequency and the vertical axis is reactance.
  • FIG. 3 is a diagram showing an example of insertion loss of filter device 100 according to the first embodiment. In FIG. 3, the horizontal axis is frequency and the vertical axis is insertion loss.
  • the line Ln1 indicates the reactance characteristic of the filter device 100 of the first embodiment
  • the line Ln2 indicates the reactance characteristic of the comparative filter device.
  • the filter device to be compared has a configuration in which an inductor L2 is connected in parallel to an LC series resonator composed of an inductor L1 and a capacitor C1.
  • the filter device 100 was simulated with an inductor L1 of 1.4 nH, an inductor L2 of 3.98 nH, a capacitor C1 of 0.6 pF, and a capacitor C2 of 1.1 pF.
  • a comparison filter device was simulated with an inductor L1 of 2.6 nH, an inductor L2 of 3.98 nH, and a capacitor C1 of 0.32 pF.
  • the filter device to be compared has a series resonance frequency F1 of 5.5 GHz in the passband (f1 band) and a parallel resonance frequency F3 of 3.5 GHz in the attenuation band (f3 band). Become. However, in the comparative filter device, the reactance cannot be zero at frequencies lower than the parallel resonance frequency F3.
  • the series resonance frequency F1 of the passband (f1 band) is 5.5 GHz
  • the series resonance frequency F2 of the passband (f2 band) is 2.4 GHz
  • the parallel resonance frequency F3 of (f3 band) is 3.5 GHz.
  • the reactance can be made 0 at the frequency F2 lower than the parallel resonance frequency F3.
  • the line Ln3 indicates the insertion loss of the filter device 100 of the first embodiment
  • the line Ln4 indicates the insertion loss of the comparative filter device.
  • the insertion loss at frequency F2 decreases from the value at point a in the comparison filter device to the value at point b in filter device 100 .
  • the filter device 100 can reduce signal loss at the frequency F2 lower than the parallel resonance frequency F3.
  • the filter device 100 is provided in an antenna device 1000 capable of emitting the series resonance frequency F1 and the series resonance frequency F2 as resonance frequencies. Thereby, the antenna device 1000 can appropriately transmit and receive signals in the passband (f1 band) and the passband (f2 band).
  • FIG. 4 is a circuit diagram and an equivalent circuit diagram of filter device 110 according to the second embodiment.
  • the filter device 110 of the second embodiment has the configuration of the filter device of the first embodiment except that the inductor L1 and the inductor L2 are magnetically coupled to each other. Same as 100.
  • Filter device 110 generates mutual inductance M between inductor L1 and inductor L2.
  • the filter device 110 is an additive circuit in which the winding directions of the coils forming the inductor L1 and the inductor L2 are opposite to each other.
  • the equivalent circuit diagram shown in FIG. 4(B) shows an equivalent circuit diagram of the circuit of the filter device 110 shown in FIG. 4(A).
  • mutual inductance +M and mutual inductance -M are shown on the paths.
  • FIG. 5 is a diagram showing an example of reactance characteristics of the filter device 110 according to the second embodiment.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • FIG. 6 is a diagram showing an example of insertion loss of filter device 110 according to the second embodiment.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • FIG. 7 is an enlarged view along the vertical axis of region Rg1 shown in FIG.
  • the line Ln5 indicates the reactance characteristics of the filter device 100 without magnetic coupling according to the first embodiment
  • the line Ln6 indicates the reactance characteristics of the filter device 110 with magnetic coupling according to the second embodiment. is indicated by line Ln7.
  • Filter device 110 generates mutual inductance M due to magnetic coupling.
  • the filter device 100 without magnetic coupling according to the first embodiment is simulated with an inductor L1 of 1.4 nH, an inductor L2 of 3.98 nH, a capacitor C1 of 0.6 pF, and a capacitor C2 of 1.1 pF. rice field.
  • the filter device 110 with magnetic coupling according to the second embodiment has an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, a coupling coefficient k of 0.5,
  • a simulation was performed with a mutual inductance M of 0.88 nH.
  • a comparison filter device was simulated with an inductor L1 of 2.6 nH, an inductor L2 of 3.98 nH, and a capacitor C1 of 0.32 pF.
  • the filter device to be compared has a series resonance frequency F1 of 5.5 GHz in the pass band (f1 band) and a parallel resonance frequency F3 of 3.5 GHz in the attenuation band (f3 band). Become. However, in the comparative filter device, the reactance cannot be zero at frequencies lower than the parallel resonance frequency F3.
  • the series resonance frequency F1 in the passband (f1 band) is 5.5 GHz
  • the series resonance frequency F2 in the passband (f2 band) is 5.5 GHz.
  • the parallel resonance frequency F3 of the attenuation band (f3 band) is 3.5 GHz.
  • the reactance can be zero at frequency F2 lower than parallel resonance frequency F3.
  • the line Ln8 indicates the insertion loss of the filter device 100 of the first embodiment
  • the line Ln9 indicates the insertion loss of the filter device 110 of the second embodiment
  • the line Ln9 indicates the insertion loss of the comparison filter device. Ln10.
  • filter device 100 and filter device 110 have series resonance frequency F2, and thus can suppress insertion loss near series resonance frequency F2 compared to the comparison filter device. That is, filter device 100 and filter device 110 can realize a narrow-band filter device in which the attenuation characteristic changes sharply in the vicinity of parallel resonance frequency F3 compared to the comparison filter device.
  • FIG. 7 shows a waveform in which the vertical axis (insertion loss) direction of the region Rg1 shown in FIG. 6 is enlarged.
  • the ratio in the horizontal axis (frequency) direction in FIG. 6 is the same as in FIG. 5, and only the ratio in the vertical axis (insertion loss) direction is enlarged.
  • the attenuation characteristic of the line Ln9 of the filter device 110 changes steeper in the vicinity of the parallel resonance frequency F3 than the line Ln8 of the filter device 100 does.
  • the filter device 110 generates the mutual inductance M, so that the signal loss in the broadband d2 around the passband (f1 band) of the series resonance frequency F1 can be reduced more than the filter device 100 without magnetic coupling.
  • signal loss can be reduced in the wide band d1 around the passband (f2 band) of the series resonance frequency F2.
  • FIG. 8 is a diagram showing an example of reactance characteristics of the filter device 110 according to the second embodiment.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • FIG. 9 is a diagram showing an example of insertion loss of filter device 110 according to the second embodiment. In FIG. 9, the horizontal axis is frequency and the vertical axis is insertion loss.
  • FIG. 10 is an enlarged view along the vertical axis of region Rg2 shown in FIG.
  • the line Ln11 indicates the reactance characteristics of the filter device 100 without magnetic coupling
  • the line Ln12 indicates the reactance characteristics of the filter device 110 with magnetic coupling according to the second embodiment.
  • the filter device 100 was simulated with an inductor L1 of 0.8 nH, an inductor L2 of 2.3 nH, a capacitor C1 of 1.1 pF, and a capacitor C2 of 1.8 pF.
  • the filter device 110 is simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, a coupling coefficient k of 0.5, and a mutual inductance M of 0.88 nH. did
  • filter device 100 and filter device 110 have a passband (f1 band) series resonance frequency F1 of 5.5 GHz and a passband (f2 band) series resonance frequency F2 of 5.5 GHz. is 2.4 GHz, and the parallel resonance frequency F3 of the attenuation band (f3 band) is 3.5 GHz.
  • the line Ln13 indicates the insertion loss of the filter device 100
  • the line Ln14 indicates the insertion loss of the filter device 110 of the second embodiment.
  • filter device 100 and filter device 110 have the same level of reactance at parallel resonance frequency F3 as indicated by point c.
  • FIG. 10 shows a waveform in which the vertical axis (insertion loss) direction of region Rg2 shown in FIG. 9 is enlarged.
  • the ratio in the horizontal axis (frequency) direction in FIG. 10 is the same as in FIG. 9, and only the ratio in the vertical axis (insertion loss) direction is enlarged.
  • the line Ln14 of the filter device 110 has a steeper attenuation characteristic near the parallel resonance frequency F3 than the line Ln13 of the filter device 100 does.
  • the filter device 110 reduces the signal loss in the broadband d2 around the passband (f1 band) of the series resonance frequency F1 more than the filter device 100 by magnetic coupling.
  • signal loss can be reduced in a wide band d1 around the passband (f2 band) of the series resonance frequency F2.
  • FIG. 11 is a diagram showing an example of reactance characteristics of the filter device according to Modification 1 of Embodiment 2.
  • FIG. 11 the horizontal axis is frequency and the vertical axis is reactance.
  • FIG. 12 is a diagram showing an example of insertion loss of the filter device according to Modification 1 of Embodiment 2.
  • FIG. 12 the horizontal axis is frequency and the vertical axis is insertion loss.
  • FIG. 13 is an enlarged view along the vertical axis of region Rg3 shown in FIG.
  • FIGS. 11 to 13 are diagrams in which the pass band (f1 band) of the series resonance frequency F1 is set to an extremely high frequency by making the inductor L1 smaller than in FIGS. 5 to 7 above.
  • the line Ln15 indicates the reactance characteristic of the filter device 110 according to the second embodiment
  • the line Ln16 indicates the reactance characteristic of the filter device according to the first modification of the second embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • the filter device of Modification 1 was simulated with an inductor L1 of 0.01 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 4.6 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.0.
  • the filter device of Modification 1 has a series resonance frequency F1 of 23.5 GHz in the passband (f1 band) and a series resonance frequency F2 of 2.5 GHz in the passband (f2 band). 4 GHz, and the parallel resonance frequency F3 of the attenuation band (f3 band) is 3.5 GHz.
  • the series resonance frequency F2 and the parallel resonance frequency F3 are made the same while the series resonance frequency Only the frequency of frequency F1 can be changed.
  • the line Ln17 indicates the insertion loss of the filter device 110
  • the line Ln18 indicates the insertion loss of the filter device of the first modification.
  • the series resonance frequency F1 is set to a very high frequency.
  • FIG. 13 shows a waveform in which the vertical axis (insertion loss) direction of region Rg3 shown in FIG. 12 is enlarged.
  • the ratio in the horizontal axis (frequency) direction in FIG. 13 is the same as in FIG. 12, and only the ratio in the vertical axis (insertion loss) direction is enlarged.
  • the line Ln18 of the filter device of Modification 1 is closer to the passband (f2 band) of the series resonance frequency F2 which is lower than the line Ln17 of the filter device 110 with respect to the parallel resonance frequency F3.
  • Signal loss is reduced in the wide band d1.
  • the filter device of Modification 1 when there is no need to set a passband near the high side of the attenuation band (f3 band), signal loss is prevented on the other side (for example, the low side). can be lowered.
  • FIG. 14 is a circuit diagram of filter device 150 according to Modification 2 of Embodiment 2. As shown in FIG. 14, in a filter device 150 of Modification 2 of Embodiment 2, inductor L1 and inductor L2 are magnetically coupled to each other, and mutual inductance M occurs. Filter device 150 is a depolarizing circuit in which coils forming inductor L1 and inductor L2 are wound in the same direction.
  • the equivalent circuit diagram of the filter device 150 of Modification 2 is a diagram in which the mutual inductance +M shown on the path in FIG. 4B is -M and the mutual inductance -M is +M.
  • FIG. 15 is a diagram showing an example of reactance characteristics of the filter device 150 according to Modification 2 of Embodiment 2.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • FIG. 16 is a diagram showing an example of the insertion loss of filter device 150 in Modification 2 of Embodiment 2.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • FIG. 17 is an enlarged view along the vertical axis of region Rg5 shown in FIG.
  • the line Ln23 indicates the reactance characteristics of the additive filter device 110 of the second embodiment
  • the line Ln24 indicates the reactance characteristics of the depolarized filter device 150 of the second modification of the second embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • Filter device 150 of modification 2 was simulated with inductor L1 of 3.1 nH, inductor L2 of 0.4 nH, capacitor C1 of 1.3 pF, capacitor C2 of 2.9 pF, and coupling coefficient k of 0.5.
  • filter device 110 and filter device 150 of modification 2 have series resonance frequency F1 in the passband (f1 band) of 5.5 GHz and passband ( The series resonance frequency F2 in the f2 band) is 2.4 GHz, and the parallel resonance frequency F3 in the attenuation band (f3 band) is 3.5 GHz.
  • the reactance can be reduced to 0 at the frequency F2 lower than the parallel resonance frequency F3.
  • the line Ln25 indicates the insertion loss of the filter device 110
  • the line Ln26 indicates the insertion loss of the filter device 150 of the second modification.
  • the additive filter device 110 has a steeper attenuation characteristic near the parallel resonance frequency F3 than the depolarized filter device 150 of Modification 2. It is a variable narrow band filter device.
  • FIG. 17 shows a waveform in which the vertical axis (insertion loss) direction of region Rg5 shown in FIG. 16 is enlarged.
  • the ratio in the horizontal axis (frequency) direction in FIG. 17 is the same as in FIG. 16, and only the ratio in the vertical axis (insertion loss) direction is enlarged.
  • the line Ln25 of the additive filter device 110 has a steeper attenuation characteristic in the band d1 near the parallel resonance frequency F3 than the line Ln26 of the depolarized filter device 150 of the second modification. ing. However, it can be said that the filter device 150 of Modification 2 has a wider attenuation characteristic in the vicinity of the parallel resonance frequency F3 than that of the filter device 110 .
  • the line Ln26 of the depolarizing filter device 150 of Modification 2 is in a band farther from the parallel resonance frequency F3 than the line Ln25 of the additive filter device 110 (a band higher than F1, or F2 band), the signal loss is reduced. In this way, even if the filter device has the same structure, the characteristics are different depending on whether the filter is additive or depolar. A circuit designer can design additive or depolarizing circuits according to desired characteristics.
  • FIG. 18 is a diagram showing the configuration of an antenna device 2000 in another modified example.
  • Antenna device 2000 includes a feeding circuit RF1, a filter device 200, and an antenna 155.
  • FIG. Antenna device 2000 differs from antenna device 1000 of the first embodiment in the configuration of the filter device.
  • the filter device 200 includes an inductor L1, a capacitor C1, an inductor L2, and a capacitor C2 as shown in FIG.
  • the LC series resonator RC1 is an LC series resonator formed by connecting an inductor L1 and a capacitor C1 in series.
  • LC series resonator RC2 is an LC series resonator formed by connecting capacitor C2 and inductor L2 in series.
  • filter device 200 has a structure in which the positions of inductor L2 and capacitor C2 are switched. A structure in which the inductor L1 and the capacitor C1 are interchanged may be used.
  • FIG. 19 is a diagram showing the configuration of antenna module 4000 according to the third embodiment.
  • Antenna module 4000 includes antenna device 1000 and antenna device 3000 .
  • Antenna device 3000 includes a feeding circuit RF2 and an antenna 165 .
  • Antenna module 4000 is installed in, for example, a mobile terminal such as a mobile phone, a smart phone, or a tablet, or a communication device such as a personal computer having a communication function.
  • Feed circuit RF2 of antenna device 3000 supplies antenna 165 with a high-frequency signal in the frequency band of the f3 band.
  • the antenna 165 can radiate into the air the f3-band high-frequency signal supplied from the feeder circuit RF2 as radio waves.
  • the filter device 100 is provided to remove high frequency signals in the f3 band that can become noise in the antenna device 1000 by increasing insertion loss due to parallel resonance.
  • the antenna 155 and the antenna 165 are mounted on the same substrate 170. Although the antennas 155 and 165 are provided on the same substrate 170 in FIG. 19, they may be provided on different substrates as long as they are provided in the same antenna module 4000 .
  • the filter device 100 of the antenna device 1000 can suppress the influence of the antenna device 3000. Therefore, in the antenna module 4000, the antenna device 1000 and the antenna device 3000 can be arranged close to each other. As a measure of proximity, the case where the characteristics of the antenna device 1000 are changed as the influence of the antenna device 3000 is shown.
  • FIG. 20 is an external view of the antenna module 4000 of Embodiment 3.
  • the antenna module 4000 includes an antenna device 1000 and an antenna device 3000 as shown in FIG.
  • Antenna device 1000 includes antenna 155, which is a monopole antenna, filter device 100, and feeding circuit RF1.
  • Antenna device 3000 includes antenna 165, which is a monopole antenna, and feeding circuit RF2.
  • the antennas 155 and 165 are not limited to monopole antennas, and may be inverted F-type antennas, loop antennas, array antennas, or the like.
  • Antenna 155 is connected to feeder circuit RF1 through filter device 100 .
  • Antenna 165 is connected to feeder circuit RF2.
  • the antenna module 4000 can radiate radio waves in the f1 band, f2 band, and f3 band.
  • the antenna module 4000 includes an antenna device 1000 capable of radiating f1-band and f2-band radio waves, and an antenna device 3000 capable of radiating f3-band radio waves.
  • the filter device described above has been described as being designed in consideration of only the inductor L1, the inductor L2, the capacitor C1, and the capacitor C2.
  • the parasitic inductance as the inductor L1 or the inductor L2
  • use the parasitic capacitance component of the inductor element itself as the capacitor or use the parasitic inductance component of the capacitor element as the inductor.
  • the filter device described above may be provided with a matching circuit for impedance matching at the positions of the terminals P1 and P2, and a switch for connecting and switching paths.
  • the filter device described above may be configured as an integrated component. As a result, the filter device does not need to consider the influence of the wiring pattern, and can be easily mounted on each device.
  • an LC series resonator RC1 is formed by connecting an inductor L1 and a capacitor C1 in series
  • an LC series resonator RC1 is formed by connecting an inductor L2 and a capacitor C2 in series.
  • the LC parallel resonator formed by connecting the LC series resonator RC2 and the LC series resonator RC2 in parallel has been described.
  • filter device 110 in which inductor L1 and inductor L2 are magnetically coupled to each other as shown in FIG. 4A in filter device 100 of the first embodiment has been described.
  • a filter device 300 in which an inductor is provided in parallel with the filter device 110 of the second embodiment will be described.
  • FIG. 21 is a circuit diagram of filter device 300 according to the fourth embodiment.
  • Filter device 300 includes inductor L1, inductor L2, inductor L3, capacitor C1, and capacitor C2, as shown in FIG.
  • Inductors L1 and L2 are magnetically coupled to each other, but inductor L3 (third inductor) is not magnetically coupled to inductors L1 and L2.
  • the filter device before adding inductor L3 corresponds to filter device 110 of the second embodiment.
  • filter device 300 of the fourth embodiment the same components as those of filter device 100 of the first embodiment and filter device 110 of the second embodiment are denoted by the same reference numerals, and detailed description thereof will not be repeated. Further, in the antenna device 1000 of the first embodiment, the filter device 300 of the fourth embodiment may be used instead of the filter device 100.
  • FIG. 22 is a diagram showing an example of changes in reactance characteristics before and after adding the inductor L3.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • the graph of FIG. 22(a) is an example of reactance characteristics of the filter device 110 of the second embodiment before adding the inductor L3.
  • the graph of FIG. 22(b) is an example of reactance characteristics of the filter device 300 of the fourth embodiment after adding the inductor L3.
  • FIG. 23 is a diagram showing an example of changes in insertion loss before and after adding inductor L3.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • the graph of FIG. 23(a) is an example of the insertion loss of the filter device 110 of the second embodiment before adding the inductor L3.
  • the graph of FIG. 23(b) is an example of the insertion loss of the filter device 300 of the fourth embodiment after adding the inductor L3.
  • the line Ln31 indicates the reactance characteristic of the filter device 110 of the second embodiment
  • the line Ln32 indicates the reactance characteristic of the filter device 300 of the fourth embodiment
  • the line Ln33 indicates the insertion loss of the filter device 110 of the second embodiment
  • the line Ln34 indicates the insertion loss of the filter device 300 of the fourth embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • the filter device 300 is simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, an inductor L3 of 1.6 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5. gone. That is, filter device 300 has the same values as filter device 110 except for the value of inductor L3.
  • the filter device 300 can add a new parallel resonance frequency F4 to the C region by connecting the inductor L3 in parallel.
  • the parallel resonance frequency F3 is shifted to F3' to the high frequency side of the graph.
  • FIG. 24 is a diagram showing an example of changes in reactance characteristics before and after adding inductor L3.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • the graph of FIG. 24(a) is an example of reactance characteristics of the filter device 110 of the second embodiment before adding the inductor L3.
  • the graph of FIG. 24(b) is an example of reactance characteristics of the filter device 300 of the fourth embodiment after adding the inductor L3.
  • FIG. 25 is a diagram showing an example of changes in insertion loss before and after adding inductor L3.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • the graph of FIG. 25(a) is an example of the insertion loss of the filter device 110 of the second embodiment before adding the inductor L3.
  • the graph of FIG. 25(b) is an example of the insertion loss of the filter device 300 of the fourth embodiment after adding the inductor L3.
  • the reactance characteristic of the filter device 110 of the second embodiment is indicated by line Ln31
  • the reactance characteristic of the filter device 300 of the fourth embodiment is indicated by line Ln35
  • the line Ln33 indicates the insertion loss of the filter device 110 of the second embodiment
  • the line Ln36 indicates the insertion loss of the filter device 300 of the fourth embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • the filter device 300 is simulated with an inductor L1 of 1.4 nH, an inductor L2 of 1.0 nH, an inductor L3 of 1.5 nH, a capacitor C1 of 0.86 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5. gone. That is, filter device 300 changes the values of inductor L1, inductor L3, and capacitor C2 from those of filter device 110.
  • the filter device 300 adjusts each numerical value to obtain a series resonance frequency F1 in the passband (f1 band), a series resonance frequency F2 in the passband (f2 band), an attenuation band (
  • the parallel resonance frequency F3 of the f3 band) can be made the same as the frequency of the filter device 110, and the parallel resonance frequency F4 of the attenuation band (f4 band) can be added.
  • the filter device 300 can increase the attenuation band in the C region by providing the inductor L3 in parallel. can be a trap filter.
  • an LC series resonator RC1 is formed by connecting an inductor L1 and a capacitor C1 in series
  • an LC series resonator RC1 is formed by connecting an inductor L2 and a capacitor C2 in series.
  • the LC parallel resonator formed by connecting the LC series resonator RC2 and the LC series resonator RC2 in parallel has been described.
  • filter device 110 in which inductor L1 and inductor L2 are magnetically coupled to each other as shown in FIG. 4A in filter device 100 of the first embodiment has been described.
  • a filter device 400 in which a capacitor is provided in parallel with the filter device 110 of the second embodiment will be described.
  • FIG. 26 is a circuit diagram of filter device 400 according to the fifth embodiment.
  • Filter device 400 includes inductor L1, inductor L2, capacitor C1, capacitor C2, and capacitor C3 (third capacitor) as shown in FIG. Inductor L1 and inductor L2 are magnetically coupled to each other.
  • the filter device before adding capacitor C3 corresponds to filter device 110 of the second embodiment.
  • filter device 400 of the fifth embodiment the same components as those of filter device 100 of the first embodiment and filter device 110 of the second embodiment are denoted by the same reference numerals, and detailed description thereof will not be repeated. Further, in the antenna device 1000 of the first embodiment, the filter device 400 of the fifth embodiment may be used instead of the filter device 100.
  • FIG. 27 is a diagram showing an example of changes in reactance characteristics before and after adding the capacitor C3.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • the graph of FIG. 27(a) is an example of reactance characteristics of the filter device 110 of the second embodiment before adding the capacitor C3.
  • the graph of FIG. 27(b) is an example of reactance characteristics of the filter device 400 of the fifth embodiment after adding the capacitor C3.
  • FIG. 28 is a diagram showing an example of changes in insertion loss before and after adding the capacitor C3.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • the graph of FIG. 28(a) is an example of the insertion loss of the filter device 110 of the second embodiment before adding the capacitor C3.
  • the graph of FIG. 28(b) is an example of the insertion loss of the filter device 400 of Embodiment 5 after adding the capacitor C3.
  • the line Ln41 indicates the reactance characteristic of the filter device 110 of the second embodiment
  • the line Ln42 indicates the reactance characteristic of the filter device 400 of the fifth embodiment
  • the line Ln43 indicates the insertion loss of the filter device 110 of the second embodiment
  • the line Ln44 indicates the insertion loss of the filter device 400 of the fifth embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • the filter device 400 is simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, a capacitor C3 of 01.55 pF, and a coupling coefficient k of 0.5. gone. That is, filter device 400 has the same values as filter device 110 except for the value of capacitor C3.
  • the filter device 400 can add a new parallel resonance frequency F5 to the L-domain by connecting the capacitor C3 in parallel.
  • the parallel resonance frequency F3 is shifted to F3'' to the low frequency side of the graph.
  • the parallel resonance frequency F3 can be shifted to the low frequency side.
  • each numerical value should be adjusted. The adjustment of each numerical value will be described with reference to FIGS. 29 and 30.
  • FIG. 29 is a diagram showing an example of changes in reactance characteristics before and after adding the capacitor C3.
  • the horizontal axis is frequency and the vertical axis is reactance.
  • the upper graph in FIG. 29 is an example of reactance characteristics of filter device 110 of the second embodiment before adding capacitor C3.
  • the lower graph in FIG. 29 is an example of reactance characteristics of filter device 400 of the fourth embodiment after adding capacitor C3.
  • FIG. 30 is a diagram showing an example of changes in insertion loss before and after adding the capacitor C3.
  • the horizontal axis is frequency and the vertical axis is insertion loss.
  • the upper graph in FIG. 30 is an example of the insertion loss of the filter device 110 of the second embodiment before adding the capacitor C3.
  • the lower graph in FIG. 30 is an example of the insertion loss of the filter device 400 of Embodiment 5 after adding the capacitor C3.
  • the line Ln41 indicates the reactance characteristic of the filter device 110 of the second embodiment
  • the line Ln45 indicates the reactance characteristic of the filter device 400 of the fifth embodiment
  • the line Ln43 indicates the insertion loss of the filter device 110 of the second embodiment
  • the line Ln46 indicates the insertion loss of the filter device 400 of the fifth embodiment.
  • the filter device 110 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 1.0 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 3.8 pF, and a coupling coefficient k of 0.5.
  • the filter device 400 was simulated with an inductor L1 of 3.1 nH, an inductor L2 of 0.38 nH, a capacitor C1 of 0.4 pF, a capacitor C2 of 10 pF, a capacitor C3 of 1.6 pF, and a coupling coefficient k of 0.5. . That is, filter device 400 changes the values of inductor L2, capacitor C2, and capacitor C3 from those of filter device 110.
  • the filter device 400 adjusts each numerical value to obtain a series resonance frequency F1 in the passband (f1 band), a series resonance frequency F2 in the passband (f2 band), an attenuation band (
  • the parallel resonance frequency F3 of the f3 band) can be made the same as the frequency of the filter device 110, and the parallel resonance frequency F5 of the attenuation band (f5 band) can be added.
  • the filter device 400 can increase the attenuation band in the L-characteristic region by providing the capacitor C3 in parallel, and even if the attenuation band is increased by partially adjusting each numerical value, the purpose can be met.
  • the filter device 110 may have a configuration in which an inductor L3 is added in parallel, and a capacitor C3 is connected in parallel to the inductor L3. In such cases, attenuation bands can be added in the C- and L-characteristic regions. Further, the filter device 110 may be integrated with the inductor L3 and the capacitor C3, or the parallel resonance frequency of the filter device 110 may be adjusted using an inductor element or a capacitor element different from the filter device 110. good. Separation from the filter element 110 makes it easy to adjust the frequency reflecting the characteristics of each individual when incorporated into the antenna device 1000 .

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PCT/JP2022/041921 2021-11-22 2022-11-10 フィルタ装置、アンテナ装置、およびアンテナモジュール Ceased WO2023090250A1 (ja)

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