WO2023082583A1 - 一种光伏-热电集成器件 - Google Patents

一种光伏-热电集成器件 Download PDF

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WO2023082583A1
WO2023082583A1 PCT/CN2022/093152 CN2022093152W WO2023082583A1 WO 2023082583 A1 WO2023082583 A1 WO 2023082583A1 CN 2022093152 W CN2022093152 W CN 2022093152W WO 2023082583 A1 WO2023082583 A1 WO 2023082583A1
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thermoelectric
solar cell
photovoltaic
integrated device
series structure
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PCT/CN2022/093152
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English (en)
French (fr)
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解俊杰
刁一凡
吴兆
徐琛
李子峰
孙朱行
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隆基绿能科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H01L31/0525—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells including means to utilise heat energy directly associated with the PV cell, e.g. integrated Seebeck elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the disclosure belongs to the technical field of solar cells, and in particular, relates to a photovoltaic-thermoelectric integrated device.
  • the surface temperature of the modules usually reaches above 70°C.
  • Working at high temperature for a long time is very detrimental to the efficiency, stability and life of solar cells. If this part of the heat can be utilized, the overall energy conversion efficiency of the photovoltaic module can be further improved, and the operating temperature of the solar cell can be reduced to a certain extent (heat energy is converted into electrical energy), and the service life of the photovoltaic module can be extended.
  • thermoelectric devices Although there are already some designs (such as CN110247627A) that integrate thermoelectric devices into solar cells, the current design is usually to simply stack thermoelectric devices on the back of the battery, and the electric energy generated by the thermoelectric devices and solar cells is output independently.
  • One set of output requires two sets of circuit systems. If the overall output requires voltage or current matching, the thermoelectric system and photovoltaic system need to compromise with each other, and the energy conversion efficiency cannot be fully utilized. And the two sets of systems are complex in design and high in cost, which is unfavorable for popularization and implementation.
  • the present disclosure provides a photovoltaic-thermoelectric integrated device.
  • the present disclosure relates to the following aspects:
  • thermoelectric series structure connects the first solar cell and the second solar cell
  • thermoelectric series structure includes a thermoelectric material region, and the conductivity ⁇ of the thermoelectric material region is ⁇ 1 ⁇ 10 7 S/m.
  • the Seebeck coefficient S of the thermoelectric material region is greater than or equal to 30 ⁇ V/K.
  • the power factor PF of the thermoelectric material region is ⁇ 9 mW/mK 2 , preferably PF ⁇ 15 mW/mK 2 .
  • the material of the thermoelectric material region is metallic carbon nanotube fiber material or Cu 2 Se-Cu composite material.
  • thermoelectric series structure further includes a conductive material region, wherein the thermoelectric material region is in contact with the first solar cell and the second solar cell, and is in contact with the first solar cell and the second solar cell
  • the length of the contact portion is equal to or greater than 5mm.
  • thermoelectric series structure is provided between the thermoelectric series structure and the first solar cell and the second solar cell.
  • connection function layer is used to reduce the contact resistance between the thermoelectric series structure and the first solar cell and the second solar cell, covering the connection between the thermoelectric series structure and the first solar cell. A portion where the solar cell is in contact with the second solar cell.
  • the material forming the connecting functional layer is preferably a tin-containing alloy, more preferably a tin-silver alloy or a tin-lead alloy.
  • the first solar cell and the second solar cell are selected from one of crystalline silicon solar cells, gallium arsenide solar cells, copper indium gallium selenide solar cells, or perovskite solar cells.
  • thermoelectric series structure is selected from one of circle, triangle, inverted triangle and rectangle.
  • the photovoltaic-thermoelectric integrated device of the present disclosure adopts a thermoelectric material with high electrical conductivity and high power factor as a series connection structure between two solar cells in the module, and connects the two cells in series.
  • the series structure can increase the output voltage and energy conversion efficiency of the whole assembly.
  • FIG. 1 is a schematic structural diagram of a photovoltaic-thermoelectric integrated device of the present disclosure.
  • Fig. 2 is an equivalent circuit diagram of the photovoltaic-thermoelectric integrated device of the present disclosure.
  • FIG. 3 is a photovoltaic-thermoelectric integrated device with different thermoelectric series structures according to the present disclosure.
  • Fig. 4 is a schematic structural diagram of a photovoltaic-thermoelectric integrated device with a connecting functional layer according to the present disclosure.
  • FIG. 5 is a schematic structural diagram of a connection function layer in the present disclosure.
  • thermoelectric series structure 21 conductive material area, 22 thermoelectric material area, 23 solar cell contact area, 24 no solar cell contact area, 3 connection functional layer.
  • thermoelectric series structure connects the first solar cell and the The second solar cell is connected in series, that is, one end of the thermoelectric series structure is connected to the front electrode of the first solar cell, and the other end of the thermoelectric series structure is connected to the back electrode of the second solar cell. Due to the temperature difference between the front and back of the battery under working conditions, this temperature difference will generate a potential difference at both ends of the series structure with thermoelectric properties, which can be superimposed with the output voltage of the battery string, thereby increasing the output voltage of the entire assembly and energy conversion efficiency.
  • the photovoltaic-thermoelectric integrated device of the present disclosure includes two solar cells 1 and a thermoelectric series structure 2 , wherein the thermoelectric series structure 2 connects the two solar cells 1 in series.
  • One end of the thermoelectric series structure 2 is connected to the front electrode of one of the solar cells 1 (i.e., the electrode facing the direction of illumination), and the other end of the thermoelectric series structure 2 is connected to the back electrode of the other solar cell 1 (i.e., the electrode facing away from the direction of illumination). electrode).
  • thermoelectric series structure 2 can act as a wire on the one hand, and on the other hand, due to its own thermoelectric effect, it generates a potential difference between the front end of the left battery and the back of the right battery, thereby improving the overall output while connecting the two batteries. Voltage.
  • thermoelectric effect refers to a phenomenon in which current or charge accumulation occurs when electrons (holes) in a heated object move from a high-temperature region to a low-temperature region with a temperature gradient.
  • FIG. 2 The equivalent circuit diagram of the photovoltaic-thermoelectric integrated device of the present disclosure is shown in FIG. 2 .
  • thermoelectric series structure When the temperature difference between the hot end and the cold end of the thermoelectric series structure is constant, the voltage generated by the photovoltaic-thermoelectric integrated device is a constant value. Therefore, the thermoelectric series structure is regarded as a "constant voltage source" in the circuit diagram; when the light intensity of the photovoltaic device is constant, its The output current value is a constant value, so it is treated as a "constant current source”.
  • V TE is the output voltage of the thermoelectric series structure
  • R TE is the resistance of the thermoelectric series structure
  • I PV is the output current of the solar cell
  • R S is the series resistance of the solar cell
  • RSH is the parallel resistance of the solar cell
  • V PV is the output voltage of the solar cell, that is, the voltage between two points AB,
  • V total is the output voltage of the photovoltaic-thermoelectric integrated device, that is, the voltage between two AC points.
  • the overall output of the photovoltaic-thermoelectric integrated device shown in Figure 1 is:
  • V total V TE +V PV ,
  • thermoelectric series structure 2 acts as a wire on the one hand, the electrical conductivity of the thermoelectric material must satisfy the conductivity ⁇ 1 ⁇ 10 7 S/m, which can ensure that the conductive series structure 2 has a comparable conductivity to the conductive materials commonly used in the prior art. performance.
  • thermoelectric effect when there is a temperature difference between the ends, that is, a certain potential difference is formed at both ends of the temperature difference. This is due to the thermal movement of carriers inside the material.
  • the "thermoelectric effect" of most materials is very weak, it is not suitable for thermoelectric devices.
  • One of the parameters for evaluating the thermoelectric properties of a material is the Seebeck coefficient.
  • the Seebeck coefficient represents the voltage that can be generated between the hot and cold ends of a material under a unit temperature difference. Generally speaking, the higher the conductivity of the material, the faster the carrier moves, and the smaller the Seebeck coefficient. However, the smaller the Seebeck coefficient, the less noticeable the voltage gain.
  • the Seebeck coefficient S of the thermoelectric material is greater than or equal to 30 ⁇ V/K. That is, the electrical conductivity ⁇ 1 ⁇ 10 7 S/m of the thermoelectric material, and the Seebeck coefficient S ⁇ 30 ⁇ V/K.
  • thermoelectric device which describes the output power of thermoelectric devices
  • PF power factor
  • a conductive material with a power factor PF ⁇ 9mW/mK 2 can be further selected, preferably a conductive material with a power factor PF ⁇ 15mW/mK 2 .
  • thermoelectric series structure includes a thermoelectric material region, and the thermoelectric material region is made of a thermoelectric material.
  • the requirements for parameters such as conductivity, Seebeck coefficient, and power factor in the thermoelectric material region are as described above for thermoelectric materials.
  • the thermoelectric tandem structure may also include a region of conductive material, which is made of a conventional conductive material. Therefore, the thermoelectric series structure is at least partly made of thermoelectric material, that is, it may be entirely made of thermoelectric material, or part of it may be made of thermoelectric material.
  • the thermoelectric series structure 2 is entirely made of thermoelectric materials, and the thermoelectric series structure 2 is the thermoelectric material area.
  • the thermoelectric series structure 2 is made of part of thermoelectric materials, that is, it consists of a conductive material region 21 , a thermoelectric material region 22 and a conductive material region 21 in sequence.
  • the conductive material region 21 is made of conventional conductive materials, such as copper.
  • the thermoelectric material region 22 is made of thermoelectric material.
  • the thermoelectric series structure 2 combines traditional conductive materials and thermoelectric materials, which can save the amount of thermoelectric materials on the one hand and reduce costs, and on the other hand can better lead out current.
  • thermoelectric material region 22 that is, the part made of thermoelectric material of the thermoelectric series structure 2
  • the thermoelectric material region 22 on the two solar cells 1 is greater than or equal to 5 mm. This ensures that the thermoelectric material region 22 generates an effective thermoelectric voltage.
  • thermoelectric material region only needs to meet the data range of the above parameters such as conductivity, Seebeck coefficient, power factor, etc., for example, it can be metallic carbon nanotube fiber material or Cu 2 Se-Cu composite material.
  • the number of carbon nanotube walls is preferably not more than 5, for example, it can be 1, 2, 3, 4, 5, and more preferably the number of walls is not more than 2, for example, it can be 1 or 2.
  • the Cu 2 Se-Cu composite material a material with a molar ratio of Cu 2 Se to Cu of 9:1 is preferred.
  • thermoelectric series structure can be in various shapes, preferably circular, triangular or rectangular.
  • thermoelectric tandem structure can be directly in contact with two solar cells, that is, directly in contact with the front electrode or the back electrode of the solar cell.
  • a connecting functional layer may be provided in the area where the thermoelectric series structure is in contact with the solar cell.
  • connection function layer 3 is provided between the solar cell 1 and the thermoelectric series structure 2 .
  • the arrangement of the connection function layer 3 has the following two functions: 1. It can realize lower contact resistance between the solar cell 1 and the thermoelectric series structure 2 . 2 can achieve higher welding strength between the solar cell 1 and the thermoelectric series structure 2.
  • the connecting functional layer 3 should at least partially cover the area where the thermoelectric series structure 2 is in contact with the solar cell 1 so that the part of the thermoelectric series structure 2 located on the solar cell 1 .
  • the thermoelectric series structure 2 includes a solar cell contact region 23 , a solar cell non-contact region 24 and a solar cell contact region 23 connected in sequence. Wherein the solar cell contact area 23 is located on the solar cell 1 , and the non-solar cell contact area 24 is located between two solar cells 1 and does not contact the solar cell 1 .
  • the connection functional layer 3 cannot be arranged in the non-solar cell contact region 24, because the temperature difference region of the thermoelectric series structure is the non-solar cell contact region 24, if other conductive materials, soldering materials, etc. are coated on the non-solar cell contact region 24, then Will affect the output of thermoelectric voltage V TE .
  • the specific arrangement of the connecting functional layer 3 may include partial covering and complete covering. As shown in FIG. 4 a , the connecting functional layer 3 is disposed between the solar cell 1 and the thermoelectric series structure 2 , and partially covers the solar cell contact region 23 of the thermoelectric series structure 2 . As shown in FIG. 4 b , the connecting functional layer 3 completely covers the solar cell contact region 23 of the thermoelectric series structure 2 .
  • the material for connecting the functional layer 3 is a metal soldering material with a low melting point and low resistance, preferably a tin-containing alloy, more preferably a tin-silver alloy or a tin-lead alloy.
  • a photovoltaic-thermoelectric integrated device the structure of which is shown in Figure 4a and Figure 5, includes two solar cells 1 and a thermoelectric series structure 2, wherein the thermoelectric series structure 2 connects the two solar cells 1 in series.
  • One end of the thermoelectric series structure 2 is connected to the front electrode of one of the solar cells 1 (i.e., the electrode facing the direction of illumination), and the other end of the thermoelectric series structure 2 is connected to the back electrode of the other solar cell 1 (i.e., the electrode facing away from the direction of illumination). electrode).
  • the solar cell 1 is a 182-type P-PERC monocrystalline silicon cell.
  • the thermoelectric series structure 2 is entirely made of metallic single-walled carbon nanotube fiber material.
  • the thermoelectric series structure 2 includes a solar cell contact region 23 , a solar cell non-contact region 24 and a solar cell contact region 23 connected in sequence. Wherein the solar cell contact area 23 is located on the solar cell 1 , and the non-solar cell contact area 24 is located between two solar cells 1 and does not contact the solar cell 1 . As shown in Figure 4a, the connection function layer 3 is arranged on the contact part of the solar cell 1 and the thermoelectric series structure 2, specifically, a tin-silver alloy is coated on the solar cell contact area 23 to reduce the resistance and improve the solar cell 1 and the thermoelectric series connection. Bond strength between structures 2.
  • thermoelectric series structure 2 connects the two solar cells 1 in series.
  • One end of the thermoelectric series structure 2 is connected to the front electrode of one of the solar cells 1 (i.e., the electrode facing the direction of illumination), and the other end of the thermoelectric series structure 2 is connected to the back electrode of the other solar cell 1 (i.e., the electrode facing away from the direction of illumination). electrode).
  • the solar cell 1 is a 182-type P-PERC monocrystalline silicon cell.
  • the thermoelectric series structure 2 includes a solar cell contact region 23 , a solar cell non-contact region 24 and a solar cell contact region 23 connected in sequence. Wherein the solar cell contact area 23 is located on the solar cell 1 , and the non-solar cell contact area 24 is located between two solar cells 1 and does not contact the solar cell 1 . As shown in Figure 4b, the connection function layer 3 is arranged on the contact part of the solar cell 1 and the thermoelectric series structure 2, specifically, a tin-silver alloy is coated on the contact area 23 of the solar cell to reduce the resistance and improve the solar cell 1 and the thermoelectric series connection. Bond strength between structures 2.
  • Embodiment 1 The only difference between this embodiment and Embodiment 1 is that there is no tin-silver alloy coating in the contact area between the solar cell 1 and the thermoelectric series structure 2, that is, there is no connecting functional layer 3.
  • the contact resistance at 1 and 2 is relatively large
  • the actual power gain P TE is about 100mW.
  • thermoelectric series structure 2 is completely made of the currently commonly used thermoelectric material: Bi 2 Te 3 .
  • the Seebeck coefficient of Bi 2 Te 3 is 170 ⁇ V/K, which is higher than that of carbon nanotubes.
  • Table 1 shows the materials used in the thermoelectric series structures in the above-mentioned embodiments and comparative examples and their corresponding properties.

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Abstract

本公开提供一种光伏-热电集成器件，所述光伏-热电集成器件包括第一太阳能电池、第二太阳能电池和热电串联结构，其中所述热电串联结构将所述第一太阳能电池和所述第二太阳能电池串联，所述热电串联结构包括热电材料区，所述热电材料区的电导率σ≥1×10 7S/m。本公开的光伏-热电集成器件，采用具有高电导率、高功率因子的热电材料，作为组件中两片太阳能电池之间串联结构，将两片电池进行串联。该串联结构可以增加整个组件的输出电压和能量转换效率。

Description

一种光伏-热电集成器件
本申请要求在2021年11月09日提交中国专利局、申请号为202111322064.X、发明名称为“一种光伏-热电集成器件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开属于太阳能电池技术领域领域，具体地，涉及一种光伏-热电集成器件。
背景技术
在光伏组件实际工作的情况下，组件表面温度通常会达到70℃以上。长时间在高温下工作，对太阳能电池的效率、稳定性和寿命等指标都是非常不利的。如果能将这一部分热量加以利用，既可以进一步提高光伏组件的整体能量转换效率，又可以一定程度的降低太阳能电池的工作温度(热能转换为电能)，延长光伏组件的使用寿命。
虽然，目前已经有一些将热电器件集成于太阳能电池的设计(如CN110247627A)，但目前的设计通常是在电池的背面简单叠加热电器件，热电器件和太阳能电池产生的电能是分别独立输出的，两套输出需要两套电路系统，若整体输出则需要进行电压或电流匹配，热电系统和光伏系统需要相互妥协，不能充分发挥能量转换效率。且两套系统设计复杂，成本高，不利于推广实施。
概述
针对现有技术存在的问题，本公开提供一种光伏-热电集成器件。
具体来说，本公开涉及如下方面：
一种光伏-热电集成器件，所述光伏-热电集成器件包括第一太阳能电池、第二太阳能电池和热电串联结构，其中所述热电串联结构将所述第一太阳能电池和所述第二太阳能电池串联，所述热电串联结构包括热电材料区，所述热电材料区的电导率σ≥1×10 7S/m。
可选地，所述热电材料区的塞贝克系数S≥30μV/K。
可选地，所述热电材料区的功率因子PF≥9mW/mK 2，优选PF≥15mW/mK 2。
可选地，所述热电材料区的材料为金属性碳纳米管纤维材料或Cu 2Se-Cu复合材料。
可选地，所述热电串联结构还包括导电材料区，其中热电材料区与所述第一太阳能电池和所述第二太阳能电池接触，并且与所述第一太阳能电池和所述第二太阳能电池接触部分的长度大于等于5mm。
可选地，所述热电串联结构与所述第一太阳能电池和所述第二太阳能电池之间设置有连接功能层。
可选地，所述连接功能层用于降低所述热电串联结构与所述第一太阳能电池和所述第二太阳能电池之间的接触电阻，包覆所述热电串联结构中与所述第一太阳能电池和所述第二太阳能电池接触的部分。
可选地，形成所述连接功能层的材料优选为含锡合金，进一步优选为锡银合金或锡铅合金。
可选地，所述第一太阳能电池和所述第二太阳能电池选自晶硅太阳能电池、砷化镓太阳能电池、铜铟镓硒太阳能电池、或钙钛矿太阳能电池中的一种。
可选地，所述热电串联结构的截面选自圆形、三角形、倒三角形、矩形中的一种。
本公开的光伏-热电集成器件，采用具有高电导率、高功率因子的热电材料，作为组件中两片太阳能电池之间串联结构，将两片电池进行串联。该串联结构可以增加整个组件的输出电压和能量转换效率。
附图简述
图1为本公开光伏-热电集成器件的结构示意图。
图2为本公开光伏-热电集成器件的等效电路图。
图3为本公开具有不同热电串联结构的光伏-热电集成器件。
图4为本公开具有连接功能层的光伏-热电集成器件的结构示意图。
图5为本公开连接功能层的结构示意图。
附图标记：
1太阳能电池，2热电串联结构，21导电材料区，22热电材料区，23太阳能电池接触区，24无太阳能电池接触区，3连接功能层。
详细描述
下面结合实施例进一步说明本公开，应当理解，实施例仅用于进一步说明和阐释本公开，并非用于限制本公开。
除非另外定义，本说明书中有关技术的和科学的术语与本领域内的技术人员所通常理解的意思相同。虽然在实验或实际应用中可以应用与此间所述相似或相同的方法和材料，本文还是在下文中对材料和方法做了描述。在相冲突的情况下，以本说明书包括其中定义为准，另外，材料、方法和例子仅供说明，而不具限制性。以下结合具体实施例对本公开作进一步的说明，但不用来限制本公开的范围。
针对现有技术存在的问题，本公开提供一种光伏-热电集成器件，其包括第一太阳能电池、第二太阳能电池和热电串联结构，其中所述热电串联结构将所述第一太阳能电池和所述第二太阳能电池串联，即所述热电串联结构的一端与所述第一太阳能电池的正面电极连接，所述热电串联结构的另一端与所述第二太阳能电池的背面电极连接。由于在工作条件下，电池的正面和背面之间存在温差，该温差会在具有热电性能的串联结构的两端产生电势差，该电势差可以与电池串的输出电压叠加，从而增加整个组件的输出电压和能量转换效率。
如图1所示，本公开的光伏-热电集成器件包括两个太阳能电池1以及热电串联结构2，其中热电串联结构2将两个太阳能电池1串联。其中热电串联结构2的一端与其中一个太阳能电池1的正面电极(即朝向光照方向的电极)连接，热电串联结构2的另一端与另一个太阳能电池1的背面电极连接(即背向光照方向的电极)。
其中的热电串联结构2一方面可以充当导线，另一方面由于其自身的热电效应，使其在左边电池正面端和右边电池背面产生电势差，从而在连接两片电池的同时，提高了整体的输出电压。
其中，热电效应是指是当受热物体中的电子(空穴)，因随着温度梯度由高温区往低温区移动时，所产生电流或电荷堆积的一种现象。
本公开光伏-热电集成器件的等效电路图如图2所示。
当热电串联结构的热端和冷端的温差一定时，光伏-热电集成器件产生的电压为恒定值，因此，热电串联结构在电路图中视为“恒压源”；光伏器件在光照强度恒定时，其输出的电流值为恒定值，因此按照“恒流源”处理。
其中，在图2中：
V TE为热电串联结构的输出电压，
R TE为热电串联结构的电阻，
I PV为太阳能电池的输出电流，
R S为太阳能电池的串联电阻，
R SH为太阳能电池的并联电阻，
V PV为太阳能电池的输出电压，即A-B两点之间的电压，
V total为光伏-热电集成器件的输出电压，即A-C两点之间的电压。
根据电路图，图1所示的光伏-热电集成器件，其整体输出为：
V total＝V TE+V PV，
I total＝I PV＝I TE，
与常规焊带连接相比，每片太阳能电池有一个V TE的电压增益。
由于热电串联结构2一方面充当导线，因此热电材料的电导率必须满足电导率σ≥1×10 7S/m，这能保证导电串联结构2与现有技术中常用的导电材料具有相当的导电性能。
几乎所有的材料，在端点具有温差的情况下，都具有一定的“热电效应”，即在温差两端形成一定的电势差。这是由于材料内部的载流子热运动造成的。然而，由于大多数材料的“热电效应”非常弱，并不适用于热电器件。评价一个材料的热电性能的参数之一为塞贝克系数。塞贝克系数表示单位温差下材料冷热端之间可以产生的电压。一般来讲，材料的电导率越高，载流子运动越快，则塞贝克系数越小。然而，塞贝克系数越小，电压增益越不明显。
为了达到实现整体有益的电压增益，进一步地，所述热电材料的塞贝克系数S≥30μV/K。即所述热电材料的电导率σ≥1×10 7S/m，并且塞贝克系数S≥30μV/K。
描述热电器件输出功率的参数“功率因子”PF(power factor)，是评价热电器件的另一指标。该热电器件用于温差发电时，为了获得更好的输出性能，可以进一步选择功率因子PF≥9mW/mK 2的导电材料，优选功率因子PF≥15mW/mK 2的导电材料。
所述热电串联结构包括热电材料区，热电材料区由热电材料制成。热电材料区的电导率、塞贝克系数、功率因子等参数的要求如上针对热电材料所述的 要求。所述热电串联结构还可以包括导电材料区，其由传统的导电材料制成。因此所述热电串联结构至少部分由热电材料制成，即可以全部由热电材料制成，也可以其中的一部分由热电材料制成。如图3所示，其中图3a所示的光伏-热电集成器件中，热电串联结构2全部由热电材料制成，此时热电串联结构2即为热电材料区。图3b所示的光伏-热电集成器件中，热电串联结构2由部分热电材料制成，即依次由导电材料区21、热电材料区22和导电材料区21组成。其中导电材料区21由传统的导电材料制成，比如铜等。热电材料区22由热电材料制成。采用图3b所示的结构，热电串联结构2将传统的导电材料和热电材料结合使用，一方面可以节约热电材料的用量，降低成本，另一方面可以更好的导出电流。
当采用图3b所示的结构时，热电材料区22即所述热电串联结构2的由热电材料制成的部分与两个太阳能电池接触，位于两个太阳能电池1之间，并且在与两个太阳能电池1接触部分的长度大于等于5mm，即热电材料区22在两个太阳能电池1上部分的长度大于等于5mm。这样能保证热电材料区22产生有效的热电电压。
在一个具体的实施方式中，所述热电材料区的电导率σ≥1×10 7S/m，塞贝克系数S≥30μV/K，功率因子PF≥15mW/mK 2。
在一个具体的实施方式中，所述热电材料区的电导率σ＝1×10 7S/m，塞贝克系数S＝60μV/K，功率因子PF＝36mW/mK 2。
在一个具体的实施方式中，所述热电材料区的电导率σ＝2×10 7S/m，塞贝克系数S＝40μV/K，功率因子PF＝32mW/mK 2。
制备所述热电材料区的具体材料的选择只要符合上述电导率、塞贝克系数、功率因子等参数的数据范围即可，比如可以是金属性碳纳米管纤维材料或Cu 2Se-Cu复合材料。其中，对于碳纳米管纤维材料，优选碳纳米管壁数不超过5，例如可以为1、2、3、4、5，更优选壁数不超过2，例如可以为1或2。对于Cu 2Se-Cu复合材料，优选Cu 2Se与Cu摩尔比为9:1的材料。
所述热电串联结构的横截面可以为各种形状，优选为圆形、三角形或矩形。
如上所述，在光伏-热电集成器件中，热电串联结构可以直接与两个太阳能电池接触，即直接与太阳能电池的正面电极或背面电极接触。也可以进一步地，在热电串联结构与太阳能电池接触的区域设置连接功能层。
如图4和图5所示，在太阳能电池1和热电串联结构2之间设置连接功能层3。连接功能层3的设置具有以下两个作用：1可以实现太阳能电池1和热电串联结构2之间更低的接触电阻。2可以实现太阳能电池1和热电串联结构2之间更高的焊接强度。
具体地，连接功能层3的设置至少应该部分的包覆热电串联结构2与太阳能电池1接触的区域以使热电串联结构2中位于太阳能电池1上的部分。如图5所示，热电串联结构2包括依次连接的太阳能电池接触区23、无太阳能电池接触区24和太阳能电池接触区23。其中太阳能电池接触区23位于太阳能电池1上，无太阳能电池接触区24位于两个太阳能电池1之间，并且不接触太阳能电池1。连接功能层3不能设置在无太阳能电池接触区24，这是因为热电串联结构的温差区域为无太阳能电池接触区24，若在无太阳能电池接触区24涂敷其它导电材料、焊接材料等，则会影响热电电压V TE的输出。
连接功能层3的具体设置方式可以包括部分包覆和完全包覆两种。如图4a所示，连接功能层3设置在太阳能电池1和热电串联结构2之间，且部分包覆热电串联结构2的太阳能电池接触区23。如图4b所示，连接功能层3完全包覆热电串联结构2的太阳能电池接触区23。
连接功能层3的材料为低熔点、低电阻的金属焊接材料，优选为含锡合金，进一步优选为优选为锡银合金或锡铅合金。
实施例
实施例1
一种光伏-热电集成器件，结构如图4a和图5所示，包括两个太阳能电池1以及热电串联结构2，其中热电串联结构2将两个太阳能电池1串联。其中热电串联结构2的一端与其中一个太阳能电池1的正面电极(即朝向光照方向的电极)连接，热电串联结构2的另一端与另一个太阳能电池1的背面电极连接(即背向光照方向的电极)。
其中，太阳能电池1为182型P-PERC单晶硅电池。
热电串联结构2完全由金属性单壁碳纳米管纤维材料制成。金属性单壁碳纳米管纤维材料为N型热电材料，其塞贝克系数S＝60μV/K，电导率σ＝1×10 7S/m，功率因子PF＝36mW/mK 2。
热电串联结构2包括依次连接的太阳能电池接触区23、无太阳能电池接触区24和太阳能电池接触区23。其中太阳能电池接触区23位于太阳能电池1上，无太阳能电池接触区24位于两个太阳能电池1之间，并且不接触太阳能电池1。连接功能层3如图4a所示，设置在太阳能电池1和热电串联结构2接触的部分，具体地，在太阳能电池接触区23涂覆锡银合金，以降低电阻并提高太阳能电池1和热电串联结构2之间的结合强度。
当太阳能电池1的正面和背面的温差为50K，单个太阳能电池1的输出电压为V PV＝690mV，输出功率P PV＝6600mW时，采用常规方法测试图1或图2中B点和C点之间电压，得到单片电池的电压增益V TE＝3mV。
当两片电池片之间的间隙为2mm时，则单片太阳能电池的功率增益P TE＝180mW，整体“光伏-热电集成器件”功率输出为P total＝6780mW。
虽然上述电压和功率增益，与太阳能电池本身的输出电压和功率相比，相对较小。但考虑到上述增益仅为单个太阳能电池的增益，当应用于组件甚至是电站系统时，该增益则不容忽视。
实施例2
一种光伏-热电集成器件，结构如图4b和图5所示，包括两个太阳能电池1以及热电串联结构2，其中热电串联结构2将两个太阳能电池1串联。其中热电串联结构2的一端与其中一个太阳能电池1的正面电极(即朝向光照方向的电极)连接，热电串联结构2的另一端与另一个太阳能电池1的背面电极连接(即背向光照方向的电极)。
其中，太阳能电池1为182型P-PERC单晶硅电池。
热电串联结构2完全由Cu 2Se:Cu＝9:1(摩尔比)复合材料制成。Cu 2Se:Cu＝9:1(摩尔比)复合材料的塞贝克系数S＝40μV/K，电导率σ＝2×10 7S/m，功率因子PF＝32mW/mK 2。
热电串联结构2包括依次连接的太阳能电池接触区23、无太阳能电池接触区24和太阳能电池接触区23。其中太阳能电池接触区23位于太阳能电池1上，无太阳能电池接触区24位于两个太阳能电池1之间，并且不接触太阳能电池1。连接功能层3如图4b所示，设置在太阳能电池1和热电串联结构2接触的部分，具体地，在太阳能电池接触区23涂覆锡银合金，以降低电阻并提高太阳能电池1和热电串联结构2之间的结合强度。
当太阳能电池1的正面和背面的温差为50K，单个太阳能电池1的输出电压为V PV＝690mV，输出功率P PV＝6600mW时，采用常规方法测试图1或图2中B点和C点之间电压，得到单片电池的电压增益V TE＝2mV。
当两片电池片之间的间隙为2mm时，则单片太阳能电池的功率增益P TE＝160mW，整体“光伏-热电集成器件”功率输出为P total＝6760mW。
实施例3
本实施例与实施例1的不同之处仅在于，太阳能电池1和热电串联结构2接触区域无锡银合金涂敷，即无连接功能层3，这种情况下，1和2处接触电阻较大，热电作用产生的功率增益P TE＝180mW会被接触电阻部分消耗，实际的功率增益P TE约为100mW。
对比例1
本对比例与实施例1的不同之处仅在于，热电串联结构2完全由目前常用的热电材料：Bi 2Te 3制成。Bi 2Te 3的塞贝克系数为170μV/K，比碳纳米管高。但是，其电导率太低，σ＝1.655×10 3S/m，比碳纳米管低4个数量级，功率因子PF＝1.7mW/mK 2,最终导致光伏电池产生的电能大部分被其消耗，导致整体“光伏-热电集成器件”功率输出为P total＝3000mW，小于实施例1的整体输出。
上述各实施例和对比例中热电串联结构采用的材料及其相应的性能如表1所示。 表1
Figure PCTCN2022093152-appb-000001

Claims (10)

  1. 一种光伏-热电集成器件，其特征在于，所述光伏-热电集成器件包括第一太阳能电池、第二太阳能电池和热电串联结构，其中所述热电串联结构将所述第一太阳能电池和所述第二太阳能电池串联，所述热电串联结构包括热电材料区，所述热电材料区的电导率σ≥1×10 7S/m。
  2. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电材料区的塞贝克系数S≥30μV/K。
  3. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电材料区的功率因子PF≥9mW/mK 2，优选PF≥15mW/mK 2。
  4. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电材料区的材料为金属性碳纳米管纤维材料或Cu 2Se-Cu复合材料。
  5. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电串联结构还包括导电材料区，其中热电材料区与所述第一太阳能电池和所述第二太阳能电池接触，并且与所述第一太阳能电池和所述第二太阳能电池接触部分的长度大于等于5mm。
  6. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电串联结构与所述第一太阳能电池和所述第二太阳能电池之间设置有连接功能层。
  7. 根据权利要求6所述的光伏-热电集成器件，其特征在于，所述连接功能层用于降低所述热电串联结构与所述第一太阳能电池和所述第二太阳能电池之间的接触电阻，包覆所述热电串联结构中与所述第一太阳能电池和所述第二太阳能电池接触的部分。
  8. 根据权利要求1所述的光伏-热电集成器件，其特征在于，形成所述连接功能层的材料优选为含锡合金，进一步优选为锡银合金或锡铅合金。
  9. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述第一太阳能电池和所述第二太阳能电池选自晶硅太阳能电池、砷化镓太阳能电池、铜铟镓硒太阳能电池、或钙钛矿太阳能电池中的一种。
  10. 根据权利要求1所述的光伏-热电集成器件，其特征在于，所述热电串联结构的截面选自圆形、三角形、倒三角形、矩形中的一种。
PCT/CN2022/093152 2021-11-09 2022-05-16 一种光伏-热电集成器件 WO2023082583A1 (zh)

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