WO2023079767A1 - Pile à gaz et son procédé de fabrication - Google Patents

Pile à gaz et son procédé de fabrication Download PDF

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Publication number
WO2023079767A1
WO2023079767A1 PCT/JP2021/048976 JP2021048976W WO2023079767A1 WO 2023079767 A1 WO2023079767 A1 WO 2023079767A1 JP 2021048976 W JP2021048976 W JP 2021048976W WO 2023079767 A1 WO2023079767 A1 WO 2023079767A1
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WO
WIPO (PCT)
Prior art keywords
plate
bonding
alkali metal
opening
forming
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Application number
PCT/JP2021/048976
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English (en)
Japanese (ja)
Inventor
仁 西野
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株式会社多摩川ホールディングス
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Publication of WO2023079767A1 publication Critical patent/WO2023079767A1/fr

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00Arrangements or instruments for measuring magnetic variables
    • G01R33/20Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping

Definitions

  • the present invention relates to a gas cell and its manufacturing method.
  • Sensors that use gas cells containing alkali metal atoms are known to be used as high-precision magnetic sensors and gyro sensors.
  • an optical pumping type magnetic sensor is often used as a biomagnetism measuring device for detecting the magnetic field emitted from the heart or the like of a living body.
  • the atoms inside the gas cell are excited by the pump light, resulting in spin polarization. Since the polarization angle of the probe light transmitted through the gas cell rotates according to the magnetic field, the magnetic field can be measured by measuring the rotation angle of the polarization angle of the probe light.
  • two lights, the pumping light and the probe light are made to intersect in the gas cell, and the gas cell, for example, is made entirely of glass (see, for example, Patent Document 1).
  • an atomic group A such as Rb atoms that undergo nuclear magnetic resonance is polarized by optical pumping, and precession is caused by an external magnetic field. Then, the atomic group B such as Xe is polarized and magnetized by the spin exchange action.
  • the magnetization vector of the atomic population B changes under the influence of an external magnetic field, the magnetization vector of the atomic population A is also displaced due to the spin exchange effect. By detecting the displacement of the atomic group A with the probe light, it becomes a sensor that detects the external rotational moment.
  • a gas cell used in such a gyro sensor is manufactured by, for example, MEMS (Micro Electro Mechanical Systems) technology (see, for example, Non-Patent Document 1).
  • conventional gas cells are mainly manufactured by glass welding and complicated MEMS processes, so they have the problem of being expensive and difficult to array.
  • conventional MEMS gas cells have glass windows in two places, the top and the bottom, in order to allow two or more types of light to intersect, it is necessary to increase the area of the opening window and allow the light to intersect from one direction. was there. As a result, the area of the gas cell becomes large, and there is a problem that the method of use is complicated.
  • the present invention has been made based on these problems, and provides a gas cell that can be made into an array at low cost and that allows two or more types of light to easily cross, and a method for manufacturing the same. That's what it is.
  • the gas cell of the present invention includes a side wall portion in which alkali metal atoms are enclosed and which is made of a light-transmitting material and is open at both ends. a first plate portion and a second plate portion made of a permeable material; and a joint portion made of silicon disposed between the side wall portion and the first plate portion and the second plate portion to join them. It is.
  • the method of manufacturing a gas cell according to the present invention comprises: a side wall portion made of a light-transmitting material surrounding the side portion and having both ends opened; 2 plate portions are joined by a joint portion made of silicon to manufacture a gas cell in which alkali metal atoms are sealed inside, and a side wall transparent plate made of a light-transmitting material for forming the side wall portion.
  • a second bonding step of bonding the enclosing portion and a transparent plate for a second plate made of a light transmissive material for forming the second plate portion on the other surface side of the main body substrate After the step, a diffusion step of generating an alkali metal gas from the alkali metal generating material and diffusing the alkali metal gas into the first opening through the space between the partition portion and the transparent plate for the second plate; and a third bonding step of bonding the partition portion and the transparent plate for the second plate on the side.
  • the side wall portion is made of a light-transmitting material
  • the first and second plate portions are made of a light-transmitting material and are respectively arranged at both ends of the side wall portion, and the silicon that joins them is made. Since the joint portion is provided, light can be transmitted in the direction in which the first plate portion and the second plate portion face each other and in the direction of the side wall portion, and two or more kinds of light can be easily crossed. be able to. In addition, it can be easily manufactured by using a simple MEMS process, and it is possible to reduce the cost and form an array.
  • the main substrate is formed by bonding the bonding plates to both sides of the side wall transparent plate, the first opening and the second opening are formed, and one surface side of the main substrate is formed.
  • the alkali metal generating material is placed in the second opening, the enclosing portion and the transparent plate for the second plate are bonded on the other surface side of the main substrate, and the alkali metal gas is diffused to join the partition and the transparent plate for the second plate, the gas cell of the present invention can be easily manufactured using a simple MEMS process.
  • a plurality of first openings serving as gas cells can be provided for one second opening in which the alkali metal generating material is installed, mass production can be easily performed, and cost reduction can be realized. can.
  • the side wall transparent plate and the bonding plate, the body substrate and the first transparent plate, and the body substrate and the second transparent plate are bonded by anodic bonding, they can be easily and directly bonded. be able to. Therefore, since there is no other substance in the joint portion, it is possible to prevent the alkali metal atoms from reacting with other substances in the joint portion and reducing the density of the alkali metal atoms. Therefore, the stability can be enhanced, and a highly reliable gas cell can be obtained.
  • a protruding portion is formed in a region corresponding to the enclosing portion on the side of the transparent plate for the second plate facing the main substrate so as to protrude further toward the main substrate than the region corresponding to the partition.
  • the transparent plate for the second plate and the main substrate can be easily and selectively bonded at the enclosing portion, and the first opening and the second opening can be easily communicated with each other through the gap.
  • FIG. 1 is a perspective view showing the configuration of a gas cell according to an embodiment of the invention
  • FIG. FIG. 2 is a cross-sectional view showing a longitudinal cross-sectional configuration passing through the center position of the gas cell shown in FIG. 1
  • 4 shows each step in the method of manufacturing a gas cell according to one embodiment of the present invention.
  • FIG. 3 is represented.
  • FIG. 1 shows the configuration of a gas cell 10 according to one embodiment of the present invention.
  • FIG. 2 shows a vertical cross-sectional configuration passing through the central position of the gas cell 10 shown in FIG.
  • the gas cell 10 is a cell in which alkali metal atoms 11 are enclosed.
  • the gas cell 10 includes a side wall portion 12 made of a light-transmitting material that surrounds the side portion and is open at both ends, and a first plate portion 13 and a second plate portion 13 and a second plate portion 13 that are respectively disposed at both ends of the side wall portion 12 and made of a light-transmitting material.
  • a portion 14 Glass such as borosilicate glass is preferably used as the light transmissive material forming the side wall portion 12, the first plate portion 13, and the second plate portion 14, for example.
  • joint portions 15 made of silicon (Si) for joining them are arranged respectively.
  • the side wall portion 12, the first plate portion 13, and the second plate portion 14 are joined by the joint portion 15 made of silicon, and the internal space 10a surrounded by them is filled with the alkali metal atoms 11. .
  • the alkali metal atoms 11 are conceptually indicated by small circles.
  • the internal space 10a may be filled with a sealed gas, for example, depending on the purpose.
  • the filled gas is selected according to the use of the gas cell 10, and examples thereof include xenon (Xe) and other gases used for spin exchange action, and inert gases as buffer gases.
  • inert gases include rare gases such as helium (He), neon (Ne), and argon (Ar), or nitrogen. It is preferable that the side wall portion 12, the first plate portion 13, the second plate portion, and the joint portion 15 are respectively joined by anodic bonding.
  • the thickness of the side wall portion 12 is, for example, about 0.5 mm to 30 mm
  • the thickness of the first plate portion 12 and the second plate portion 13 is, for example, about 0.1 mm to 1.0 mm
  • the thickness of the joint portion 15 is, for example, 0.1 mm to 0.5 mm. It can be about 0.5 mm.
  • the thickness means the thickness in the stacking direction
  • the width means the width in the direction perpendicular to the stacking direction.
  • the gas cell 10 can be manufactured as follows. 3 and 4 show each step of the gas cell manufacturing method according to one embodiment of the present invention.
  • FIGS. 3 and 4 show the cross-sectional structure of the position along the II line shown in (B) in the stacking direction, and (B) is the stacking direction shows the configuration viewed from above.
  • a side wall transparent plate 21 made of a light-transmitting material for forming the side wall portion 12 is prepared, and on both sides thereof, a bonding portion 15 is formed.
  • a bonding plate 22 made of silicon is bonded to form a body substrate 23 (body substrate forming step).
  • the light-transmissive material forming the side wall transparent plate 21 is preferably made of glass such as borosilicate glass.
  • the thickness of the side wall transparent plate 21 can be, for example, about 0.5 mm to 30 mm, and the thickness of the bonding plate 22 can be, for example, about 0.1 mm to 0.5 mm.
  • the side wall transparent plate 21 and the bonding plate 22 are preferably directly bonded by anodic bonding.
  • anodic bonding refers to bringing glass and a semiconductor into contact, for example, by using the semiconductor side as an anode and applying a DC voltage of about several hundred volts between the two to directly bond the two without using an intervening material. The method. Specifically, for example, the side wall transparent plate 21 and the bonding plate 22 are heated from 200° C. to 450° C.
  • the bonding plate 22 is brought into contact with both surfaces of the side wall transparent plate 21. Then, with the bonding plate 22 side grounded, a voltage of -350 V to -1200 V is applied to the side wall transparent plate 21, and pressure is applied between the side wall transparent plate 21 and the bonding plate 22 for bonding. .
  • the peripheral portion of the main body substrate 23 is used as an enclosing portion 24, and inside the enclosing portion 24, a first opening portion 26 and a second opening partitioned by a partition portion 25 are provided.
  • a portion 27 is formed (opening forming step).
  • the first opening 26 is a portion that forms the internal space 10a of the gas cell 10 and is provided through the main substrate 23 .
  • the side wall transparent plate 21 and the bonding plate 22 are provided through.
  • the second opening 27 is for placing an alkali metal generating material in a subsequent step, and does not need to be provided through the main substrate 23 .
  • a plurality of first openings 26 are preferably provided inside the enclosing part 24 , and one second opening 27 is preferably provided inside the enclosing part 24 .
  • 3 and 4 conceptually show the first openings 26 and the second openings 27, and the number of the first openings 26 is arbitrary according to the size of the main substrate 23. set.
  • the formation of the first opening 26 and the second opening 27 is preferably performed by machining. This is because the side wall of the first opening 26 can be easily mirror-finished. Specifically, it is preferable to polish the side wall at the time of forming the opening by drilling or the like, or after forming the opening. As the polishing treatment, for example, ultrasonic polishing in which minute ultrasonic vibration is applied to a tool is preferable, and abrasive grains may be used. In addition, the side wall can be mirror-finished by using buffing or the like.
  • the shape of the first opening 26 and the second opening 27 may be any shape such as a polygon such as a square, a polygon with rounded corners, or a circle.
  • the size of the first opening 26 and the second opening 27 (the length of one side in the case of a square and the diameter in the case of a circle) can be, for example, about 0.5 mm to 30 mm.
  • the enclosing portion 24 and the partition portion 25, and the transparent plate 28 for the first plate are joined (first joining step).
  • first joining step the bonding plate 22 of the enclosing portion 24 and the partition portion 25 on the one surface side of the main body substrate 23 is bonded to the first transparent plate 28 .
  • the bonding plate 22 and the transparent plate 28 for the first plate are preferably directly bonded by anodic bonding as in the main substrate forming step. Anodic bonding can be performed in the same manner as in the main substrate forming step.
  • the light-transmissive material forming the first transparent plate 28 is preferably made of glass such as borosilicate glass.
  • the thickness of the transparent plate 28 for the first plate can be, for example, about 0.1 mm to 1.0 mm.
  • the alkali metal generating material 28 is installed in the second opening 27 (alkali metal generating material installation step).
  • the alkali metal generating material 28 may contain alkali metal atoms such as potassium (K), cesium (Cs), rubidium (Rb), sodium (Na). , silicon, titanium (Ti), aluminum (Al), and other compounds in the form of pellets.
  • a second transparent plate 30 made of a light transmissive material for forming the second plate portion 14 is prepared, and a main substrate of the second transparent plate 30 is prepared.
  • a resist pattern 31 is formed in a region corresponding to the surrounding portion 24 of the main substrate 23 on the side opposite to 23 .
  • the light-transmissive material forming the second transparent plate 30 is preferably made of glass such as borosilicate glass.
  • the thickness of the transparent plate 30 for the second plate can be, for example, about 0.1 mm to 1.0 mm.
  • etching depth of the second transparent plate 30 is preferably, for example, about 0.05 ⁇ m to 5.0 ⁇ m. Etch depth can be controlled, for example, by etching time. As a result, a projecting portion 30 a is formed in the region corresponding to the enclosing portion 24 on the side opposite to the main substrate 23 so as to protrude further toward the main substrate 23 than the region corresponding to the partitioning portion 25 .
  • the other surface side of the main substrate 23 and the side of the transparent plate 30 for the second plate on which the projecting portion 30a is formed are opposed to each other, and the enclosing portion 24 is formed.
  • the transparent plate 30 for the second plate (second bonding step).
  • the bonding plate 22 of the enclosing portion 24 on the other surface side of the main body substrate 23 and the projecting portion 30a of the second transparent plate 30 are bonded. Since the protruding portion 30a protrudes toward the main substrate 23 from the area corresponding to the partition portion 25 of the main substrate 23, the enclosing portion 24 and the transparent plate 30 for the second plate are selectively joined to form the partition portion.
  • a gap can be formed between 25 and the transparent plate 30 for the second plate. That is, the first opening 26 and the second opening 27 are communicated through this gap.
  • the bonding between the bonding plate 22 and the second transparent plate 30 is preferably directly bonded by anodic bonding in the same manner as in the main substrate forming step.
  • the anodic bonding can be performed in the same manner as the main substrate forming step, but in the second bonding step, it is performed under the controlled pressure of the sealed gas that is sealed in the first opening 26, that is, the internal space 10a.
  • the sealing gas is sealed between the main substrate 23 and the second transparent plate 30 , that is, in the first opening 26 and the second opening 27 .
  • the filled gas is as described above.
  • an alkali metal gas (that is, alkali metal atoms 11) is generated from the alkali metal generating material 29, and the gap between the partition section 24 and the transparent plate 30 for the second plate is generated. through which the alkali metal gas is diffused from the second opening 27 to the first opening 26 (diffusion step).
  • the alkali metal gas is generated by irradiating the alkali metal generating material 29 with an infrared laser such as a YAG laser or ultraviolet rays.
  • the bonding plate 22 of the partition portion 25 on the other surface side of the main body substrate 23 and the transparent plate 30 for the second plate are bonded.
  • the alkali metal gas that is, the alkali metal atoms 11
  • the bonding plate 22 and the second transparent plate 30 are preferably directly bonded by anodic bonding as in the main substrate forming process. Anodic bonding can be performed in the same manner as in the main substrate forming step.
  • the partition portion 25 is cut for each first opening 26 (cutting step). Thereby, the gas cell 10 shown in FIGS. 1 and 2 is obtained.
  • the side wall portion 12 made of a light-transmitting material, and the first plate portion 13 and the second plate portion made of a light-transmitting material provided at both ends thereof are provided.
  • 14 are joined by the joining portion 15 made of silicon, so that light can be transmitted in the facing direction of the first plate portion 13 and the second plate portion 14 and in the direction of the side wall portion 12, respectively.
  • the joining portion 15 made of silicon so that light can be transmitted in the facing direction of the first plate portion 13 and the second plate portion 14 and in the direction of the side wall portion 12, respectively.
  • it can be easily manufactured using a simple MEMS process it is possible to reduce the cost and form an array.
  • the main substrate 23 is formed by bonding the bonding plates 22 to both surfaces of the side wall transparent plate 21, and the first opening 26 and the second opening 27 are formed.
  • the alkali metal generating material 29 is placed in the second opening 27, and the enclosing portion 24 is formed on the other surface side of the main substrate 23.
  • the transparent plate 30 for the second plate are bonded, the alkali metal gas is diffused, and the partition part 25 and the transparent plate 30 for the second plate are bonded, so that the gas cell can be easily performed by using a simple MEMS process. 10 can be manufactured.
  • a plurality of first openings 26 to be the gas cells 10 can be provided for one second opening 27 in which the alkali metal generating material 29 is installed, mass production can be easily carried out, and cost can be reduced. can be realized.
  • the side wall transparent plate 21 and the bonding plate 22, the body substrate 23 and the first transparent plate 28, and the body substrate 23 and the second transparent plate 30 are bonded by anodic bonding, it is easy to can be directly bonded to Therefore, since there is no other substance in the joint portion, it is possible to prevent the alkali metal atoms from reacting with other substances in the joint portion and reducing the density of the alkali metal atoms. Therefore, the stability can be enhanced, and a highly reliable gas cell can be obtained.
  • a protruding portion 30a is provided in a region corresponding to the surrounding portion 24 on the side of the transparent plate 30 for the second plate facing the main substrate 23 so as to protrude toward the main substrate 23 more than the region corresponding to the partitioning portion 25. is formed, the transparent plate 30 for the second plate and the main substrate 23 can be easily and selectively joined at the enclosing portion 24, and the first opening 26 and the second opening 27 are separated from each other. can be easily communicated via
  • each component was specifically described, but other components may be provided.
  • the description of each component is an example and may be different.
  • each step has been specifically described, but not all the steps may be provided, and other steps may be provided.
  • specific conditions in each step are shown as an example and may be different.
  • SYMBOLS 10 Gas cell, 10a... Internal space, 11... Alkaline metal atom, 12... Side wall part, 13... First plate part, 14... Second plate part, 15... Joint part, 21... Transparent plate for side wall, 22... For joining Plate 23 Main substrate 24 Surrounding part 25 Partitioning part 26 First opening 27 Second opening 28 Transparent plate for first plate 29 Alkali metal generating material 30 Second Transparent plate for 2 plates, 30a... Protruding part, 31... Resist pattern

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Measuring Cells (AREA)

Abstract

Le problème décrit par la présente invention est de fournir une pile à gaz et son procédé de fabrication qui permettent la mise en réseau et la réduction des coûts, et grâce auxquels il est possible de faire se croiser facilement deux ou plusieurs types de faisceaux lumineux. La solution selon l'invention porte sur une pile à gaz 10 comprenant : une paroi latérale 12 en matériau de transmission de lumière qui entoure les sections latérales et dont les deux extrémités sont ouvertes ; une première plaque 13 et une seconde plaque 14 disposées aux deux extrémités de la paroi latérale et constituées d'un matériau de transmission de lumière. La paroi latérale 12 est reliée à la première plaque 13 et à la seconde plaque 14 par une section de jonction 15 en silicone. Un espace interne 10a entouré de ce qui précède est scellé par des atomes de métal alcalin 11.
PCT/JP2021/048976 2021-11-02 2021-12-28 Pile à gaz et son procédé de fabrication WO2023079767A1 (fr)

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JP2021-179319 2021-11-02
JP2021179319 2021-11-02

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WO2023079767A1 true WO2023079767A1 (fr) 2023-05-11

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012124036A1 (fr) * 2011-03-14 2012-09-20 株式会社日立製作所 Appareil de mesure de champ magnétique
JP2013038382A (ja) * 2011-07-13 2013-02-21 Ricoh Co Ltd 原子発振器及び原子発振器の製造方法
JP2013181941A (ja) * 2012-03-05 2013-09-12 Seiko Epson Corp ガスセルおよびガスセルのコーティング方法
JP2015096864A (ja) * 2014-12-25 2015-05-21 セイコーエプソン株式会社 ガスセル
US20180212612A1 (en) * 2015-07-30 2018-07-26 Korea Advanced Institute Of Science And Technology Vapor cell comprising electro-optic function for chip-scale atomic clock, and method for manufacturing sealed container for chipscale instrument
JP2020120069A (ja) * 2019-01-28 2020-08-06 国立研究開発法人情報通信研究機構 量子光学装置
WO2021261183A1 (fr) * 2020-06-22 2021-12-30 株式会社多摩川ホールディングス Procédé de production de pile à gaz et procédé de production d'oscillateur atomique
JP2022024909A (ja) * 2020-07-28 2022-02-09 株式会社多摩川ホールディングス ガスセル、原子発信器、及び、それらの製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012124036A1 (fr) * 2011-03-14 2012-09-20 株式会社日立製作所 Appareil de mesure de champ magnétique
JP2013038382A (ja) * 2011-07-13 2013-02-21 Ricoh Co Ltd 原子発振器及び原子発振器の製造方法
JP2013181941A (ja) * 2012-03-05 2013-09-12 Seiko Epson Corp ガスセルおよびガスセルのコーティング方法
JP2015096864A (ja) * 2014-12-25 2015-05-21 セイコーエプソン株式会社 ガスセル
US20180212612A1 (en) * 2015-07-30 2018-07-26 Korea Advanced Institute Of Science And Technology Vapor cell comprising electro-optic function for chip-scale atomic clock, and method for manufacturing sealed container for chipscale instrument
JP2020120069A (ja) * 2019-01-28 2020-08-06 国立研究開発法人情報通信研究機構 量子光学装置
WO2021261183A1 (fr) * 2020-06-22 2021-12-30 株式会社多摩川ホールディングス Procédé de production de pile à gaz et procédé de production d'oscillateur atomique
JP2022024909A (ja) * 2020-07-28 2022-02-09 株式会社多摩川ホールディングス ガスセル、原子発信器、及び、それらの製造方法

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