WO2023077725A1 - Structure d'emballage de dispositif de détection de plan incliné et son procédé de fabrication - Google Patents

Structure d'emballage de dispositif de détection de plan incliné et son procédé de fabrication Download PDF

Info

Publication number
WO2023077725A1
WO2023077725A1 PCT/CN2022/086477 CN2022086477W WO2023077725A1 WO 2023077725 A1 WO2023077725 A1 WO 2023077725A1 CN 2022086477 W CN2022086477 W CN 2022086477W WO 2023077725 A1 WO2023077725 A1 WO 2023077725A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
metal base
conductive layer
functional block
insulating substrate
Prior art date
Application number
PCT/CN2022/086477
Other languages
English (en)
Chinese (zh)
Inventor
闫志超
黄小辉
Original Assignee
至芯半导体(杭州)有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 至芯半导体(杭州)有限公司 filed Critical 至芯半导体(杭州)有限公司
Publication of WO2023077725A1 publication Critical patent/WO2023077725A1/fr

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02002Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of semiconductor detection and relates to a semiconductor device packaging technology, in particular to a slope detection device packaging structure and a manufacturing method thereof.
  • Semiconductor detection is a commonly used detection technology in industrial production.
  • ultraviolet light-emitting diodes are widely used in fields such as disinfection and sterilization, optical signal transmission, and industrial manufacturing.
  • the existing packaging structure of detection devices generally adopts a planar packaging structure, that is, the detection device (such as a diode chip) is designed in parallel with the metal base, and is arranged perpendicular to or at an angle to the received light.
  • the detection device (such as a diode chip) only Part of the light can be received, which has a great impact on the detection accuracy of the detector.
  • the existing detection device packaging structure is more difficult to design when it is applied to the application structure such as miniaturization and integration. greater impact.
  • the purpose of the present invention is to provide a packaging structure for inclined-plane detection devices, which can directly detect inclined-plane structures, so as to solve the problem of poor performance of detection devices in the above-mentioned prior art and the impact on detection accuracy of detection devices due to low radiation flux acceptance rate. The problem.
  • the present invention provides the following scheme:
  • the present invention provides a package structure of an inclined plane detection device, comprising:
  • An insulating functional module includes an insulating substrate, and the insulating substrate is arranged obliquely on the metal base; the side of the insulating substrate facing the metal base is provided with a conductive layer on the back, and the insulating substrate is provided with a back conductive layer.
  • a front conductive layer is provided on a side away from the metal base, and the front conductive layer is electrically connected to the back conductive layer;
  • a detector chip the detector chip is arranged on the side of the insulating substrate away from the metal base, and is electrically connected to the front conductive layer to form a slope detection end;
  • a first metal conduction column one end of the first metal conduction column passes through the metal base, and is electrically connected to the back conductive layer, and the other end of the first metal conduction column is used to connect to a circuit board; Insulation is provided between the metal base and the first metal conducting column;
  • a metal cap tube the metal cap tube is buckled upside down on the metal base, so that the insulating functional module and the detector chip are packaged between the metal cap tube and the metal base; the metal cap The tube is provided with an obliquely arranged signal receiving window, the signal receiving window, the detector chip and the slope to be measured are parallel to each other, and the detector chip can receive all the incoming signals from the signal receiving window. Radiant flux.
  • the insulating substrate is a ceramic substrate; the upper surface of the metal base is provided with a metal base fixing groove for inserting the ceramic substrate, and the bottom of the ceramic substrate is provided for fixing the groove with the metal base Solder the bottom metal layer.
  • the bottom metal layer, the front conductive layer and/or the back conductive layer are electroplated copper layers.
  • a via hole is opened on the insulating substrate, and a second metal conduction column is penetrated in the via hole, and the two ends of the second metal conduction column are respectively connected to the front conductive layer, the The conductive layer on the back is electrically connected.
  • the metal base is provided with a through hole of the metal base, and an insulating column with a hole in the metal base is arranged in the through hole of the metal base, and an insulating column with a hole in the metal base is provided with a hole for the first metal conductor.
  • the metal base through which the post passes through has a hole insulated post through hole.
  • the first metal conducting column is fixedly connected to the insulating column with holes in the metal base through holes. For example by bonding.
  • the front conductive layer includes a first front conductive functional block and a second front conductive functional block arranged in isolation, and the first front conductive functional block and the second front conductive functional block pass through
  • the detector chip is electrically connected to form an inclined plane conduction circuit
  • the back conductive layer includes a first back conductive functional block and a second rear conductive functional block arranged in isolation, and the first back conductive functional block and the second rear conductive functional block are provided with a back surface.
  • the conductive functional block fixing groove, any one of the conductive functional block fixing grooves on the back is inserted with the first metal conduction column;
  • the metal vias are electrically connected.
  • any one of the first metal vias is set perpendicular to the metal base; the top of any one of the first metal vias is set as an inclined end surface parallel to the insulating substrate, and the The bottom of the fixing groove of the conductive functional block on the back is parallel to the inclined end surface.
  • the detector chip is a diode chip; the detector chip is arranged parallel to the insulating substrate.
  • the front conductive layer and the back conductive layer are respectively provided on both sides of the insulating substrate, the two sides of the insulating substrate are parallel to each other, and are arranged obliquely relative to the metal base; at least the insulating substrate
  • the bottom surface of the insulating substrate is set parallel to the horizontal plane of the metal base, and the top surface of the insulating substrate can be set parallel to the bottom surface, or not.
  • the bottom surface of the insulating substrate is connected to the bottom ends of the two sides, and the bottom surface of the insulating substrate is set at an angle with the two sides, and the angle is consistent with the inclination angle of the inclined surface to be measured, so as to ensure that the fronts arranged on the two sides conduct electricity.
  • layer and the conductive layer on the back are parallel to the slope to be tested.
  • a section of the insulating substrate cut perpendicular to its side is a parallelogram section.
  • the bottom of the insulating substrate can form a plane butt joint with the fixing groove of the metal base, and the installation is more reliable.
  • the bottom metal layer (planar layer) is provided on the bottom of the insulating substrate, so that the insulating substrate is welded to the fixing groove of the metal base.
  • the top of the metal cap tube is provided with an oblique plane parallel to the detector chip, and the signal receiving window is set on the oblique plane; the signal receiving window is provided with a plane lens, and the A flat lens is adhered to the inner wall of the chamfered surface.
  • the inclination angles of the insulating substrate, the detector chip and the signal receiving window may be 0° to 90°.
  • the present invention proposes a method for manufacturing a packaging structure of any one of the above-mentioned inclined-plane detection devices, including:
  • the front conductive layer and the back conductive layer are respectively arranged on both sides of the insulating substrate, and the front conductive layer and the back conductive layer are electrically connected;
  • the metal cap tube is welded on the metal base to form a sealed cavity for protecting the detector chip.
  • the packaging structure of the slope detection device proposed by the present invention has a novel and reasonable structure.
  • the signal receiving window and the detector chip parallel to the slope to be measured, not only can the structure of the slope to be measured be directly detected under the condition that the performance of the detection device is good.
  • the signal receiving window is set At the top of the cap tube, it can better guarantee the application link's demand for radiation flux, improve the detection accuracy of the detector for inclined-plane structures, and thus solve the problem of poor performance of the detector and the low radiation flux reception rate in the existing technology. Problems that affect the detection accuracy of detection devices.
  • the insulating functional module to support the detector chip and related conductive components, the packaging technology of the detector chip on the slope structure is realized, and the integration and installation stability of the structure are improved, which is conducive to improving the detection accuracy of the slope structure. Solve the current problem of slope detection and data collection.
  • the insulation function module of the present invention has a three-dimensional structure as a whole.
  • it is welded and fixed with the metal base and the first metal conducting column, which can effectively improve the firmness and stability of the inclined-plane detection structure. .
  • Fig. 1 is a front view of the packaging structure of the slope detection device disclosed in the embodiment of the present invention
  • Fig. 2 is a rear view of the packaging structure of the slope detection device disclosed in the embodiment of the present invention.
  • Fig. 3 is an exploded view of the packaging structure of the slope detection device disclosed in the embodiment of the present invention.
  • Fig. 4 is a front perspective view of the metal base disclosed by the embodiment of the present invention.
  • Fig. 5 is a back view of the metal base disclosed by the embodiment of the present invention.
  • Fig. 6 is a schematic diagram of the assembly structure of the metal base, the insulating functional module and the first metal conducting column disclosed in the embodiment of the present invention
  • Fig. 7 is a schematic diagram of the front structure of the insulation function module disclosed by the embodiment of the present invention.
  • Fig. 8 is a schematic diagram of the rear structure of the insulating functional module disclosed in the embodiment of the present invention.
  • Fig. 9 is a three-dimensional structure diagram of the metal cap tube disclosed by the embodiment of the present invention.
  • Fig. 10 is an internal structure diagram of the metal cap tube disclosed by the embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a first metal via post disclosed by an embodiment of the present invention.
  • the reference numerals are: 100, the package structure of the slope detector; 1, the metal base; 2, the through hole of the metal base; 3, the fixing groove of the metal base; 4, the insulating substrate; Bottom metal layer; 7. Conductive layer on the back; 8. Metal base with hole insulating column; 9. Slope of metal conduction column; 10. First metal conduction column; 11. Metal cap tube; 12. Signal receiving window; 13. Plane lens; 14. Detector chip; 15. Front conductive layer; 16. Via position; 17. Fixing slot for back conductive functional block; 18. Insulation functional module; 19. Back conductive functional block; 20. Metal base belt 21. The front conductive functional block; 22. The inclined inner wall of the metal cap tube; 23. The steps of the metal base.
  • One of the objectives of the present invention is to provide a packaging structure for an inclined-plane detection device, so as to meet the requirements of the detection device for inclined-plane structure detection applications and improve the detection accuracy of the detection device for inclined-plane structures.
  • Another object of the present invention is to provide a detector chip packaging technology on an inclined plane structure, which improves the detection accuracy of the inclined plane structure and solves the current difficult problem of inclined plane detection and data collection.
  • Another object of the present invention is to provide a combination method of the metal base and the insulating functional module, so as to improve the firmness and stability of the slope detection structure.
  • Another object of the present invention is to provide a combination method of the first metal conducting column and the insulating functional module, so as to improve the firmness and stability of the slope detection structure.
  • this embodiment provides a package structure 100 for an inclined-plane detection device, which mainly includes a metal base 1 , an insulating functional module 18 , a detector chip 14 , a first metal conducting column 10 and a metal cap tube 11 .
  • the insulating function module 18 includes an insulating substrate 4, and the insulating substrate 4 is arranged obliquely on the metal base 1; There is a front conductive layer 15 , and the front conductive layer 15 is electrically connected to the back conductive layer 7 .
  • the detector chip 14 is arranged on the side of the insulating substrate 4 away from the metal base, and is electrically connected to the front conductive layer 15 to form a slope detection end for detecting the slope to be measured.
  • One end of the first metal conducting post 10 runs through the metal base 1 and is electrically connected to the back conductive layer 15, and the other end of the first metal conducting post 10 is used to connect to a circuit board (the circuit board has a signal transceiver function and a circuit conduction function). function), the first metal conducting column 10 and the metal base 1 are insulated.
  • the metal cap tube 11 is turned upside down on the metal base 1 to form a sealed cavity, so that the insulating functional module 18 and the detector chip 14 are packaged inside the sealed cavity, thereby better protecting the stability of the detector chip 14;
  • the cap tube 11 is provided with a signal receiving window 12 arranged obliquely.
  • the signal receiving window 12, the detector chip 14 and the slope to be measured are parallel to each other.
  • the detector chip 14 can receive all the radiation injected by the signal receiving window 12. flux.
  • the insulating substrate 4 is preferably a ceramic substrate; the upper surface of the metal base 1 is provided with a metal base fixing groove 3 for inserting the ceramic substrate (insulating substrate 4), and the bottom of the ceramic substrate (insulating substrate 4) is provided for The bottom metal layer 6 welded with the metal base fixing groove 3.
  • the bottom metal layer 6 , the front conductive layer 15 and the back conductive layer 7 are all electroplated copper layers.
  • the relationship between the bottom metal layer 6 and the metal base 1 is fastened, and there is no electrical connection between the two.
  • a via hole 16 is opened on the insulating substrate 4, and a second metal conduction column 5 is pierced in the via hole 16.
  • the two ends of the second metal conduction column 5 are respectively electrically conductive with the front conductive layer 15 and the back Layer 7 is electrically connected.
  • the metal base 1 is provided with a metal base through hole 2
  • the metal base through hole 2 is provided with a metal base with a hole insulating column 8, and the metal base with a hole insulating column 8 is axially provided with a first metal guide.
  • the through hole 20 of the insulating post with a hole in the metal base through which the post 10 passes.
  • the metal base through hole 2 just installs the metal base band hole insulating post 8 (the outer diameter of the metal base band insulating post 8 is equal to the aperture of the metal base through hole 2, and the interference fit can be arranged between the two), and the metal base band
  • the hole insulating post 8 plays a role of fixing and insulating the first metal via post 10 .
  • the first metal conducting column 10 is fixedly connected to the through hole 20 of the insulating column with holes in the metal base. For example by bonding.
  • the front conductive layer 15 includes two front conductive functional blocks 21 (also referred to as "ceramic front electroplated copper layer functional areas") arranged in isolation, so that the front conductive layer 15 is divided into an insulating area, an insulating area, and an insulating area.
  • the aforementioned first front conductive functional block and the aforementioned second front conductive functional block are three parts, an insulating area is provided between the two front conductive functional blocks 21, and the two front conductive functional blocks 21 are arranged symmetrically, which can be connected with
  • the detector chips 14 are welded together at high temperature to form a three-dimensional beveled detector device.
  • the first front conductive functional block and the second front conductive functional block are electrically connected through the detector chip 14 to form a slope conduction circuit.
  • the two front conductive functional blocks 21 are parallel to the slope to be tested, which can form a precise detection of light on the slope to be tested.
  • the back conductive layer 7 includes two back conductive functional blocks 19 (also referred to as “ceramic back electroplated copper layer functional areas”) arranged in isolation, so that the back conductive layer 7 is integrally divided into Insulation area, the aforementioned first back conductive functional block and the aforementioned second rear front conductive functional block are three parts, an insulating area is provided between the two rear conductive functional blocks 19, and the two front conductive functional blocks 21 are symmetrical Layout; both the first back conductive functional block and the second rear conductive functional block are provided with a rear conductive functional block fixing groove 17 (also referred to as “ceramic back electroplating copper layer fixing groove”), any one of the back conductive A first metal conducting column 10 is inserted in each of the functional block fixing slots 17 (also referred to as “ceramic back electroplated copper layer fixing slots”).
  • Both the first front conductive functional block and the first rear conductive functional block, and the second front conductive functional block and the second rear conductive functional block are electrically connected through the second metal conductive column 5 .
  • the second metal conducting column 5 is preferably an electroplated through-hole metal conducting column, which can connect the electroplated copper layer functional area on the ceramic back side formed by two back conductive functional blocks 19 on the back conductive layer 7 with the front conductive layer 15.
  • the functional areas of the ceramic front electroplated copper layer formed by the upper two front conductive functional blocks 21 are interconnected (electrically connected).
  • any one of the first metal vias 10 is set perpendicular to the metal base 1; the top of any one of the first metal vias 10 is set as an inclined end surface parallel to the insulating substrate 4, that is, the metal vias
  • the inclined surface 9, the above-mentioned oblique end surface i.e. the inclined surface 9 of the metal conducting column
  • the inclination angle of the inclined end surface of the first metal conducting column 10 is the same as that of the conductive layer 7 on the back
  • the second The oblique end surface of a metal via post 10 can be welded to the back conductive layer 7 as a whole by metal solder.
  • the metal base 1 , the insulating functional module 18 and the first metal conductive column 10 form a triangular three-dimensional structure, forming a three-dimensional support structure that can firmly support the detection device with a three-dimensional slope.
  • the detector chip 14 is preferably a diode chip, more specifically, an ultraviolet light emitting diode, which can detect ultraviolet light.
  • the detector chip 14 is arranged parallel to the insulating substrate 4 .
  • the front conductive layer 15 and the back conductive layer 7 are respectively provided on both sides of the insulating substrate 4, the two sides of the insulating substrate 4 are parallel to each other, and are arranged obliquely relative to the metal base 1 in the assembled state; at least the bottom surface of the insulating substrate 4 is provided with In order to be parallel to the horizontal plane of the metal base 1 , the top surface of the insulating substrate 4 can be arranged parallel to the bottom surface, or not.
  • the bottom surface of the insulating substrate 4 is connected to the bottom ends of the two sides, and the bottom surface of the insulating substrate 4 is arranged at an angle with the two sides, and the angle is consistent with the inclination angle of the inclined surface to be measured, so as to ensure that the front conductive layer 15 arranged on the two sides and the conductive layer 7 on the back are parallel to the slope to be measured.
  • the metal base fixing groove 3 is preferably rectangular, and the size of the slot hole matches the size of the bottom metal layer 6 of the insulating substrate 4.
  • the insulating function module 18 is welded together through the bottom metal layer 6 and the metal base fixing groove 3 through silver-copper solder.
  • the insulating functional module and the metal base 1 form an integral body, specifically a three-dimensional slope structure.
  • the cross section of the insulating substrate 4 cut perpendicular to its side is a parallelogram cross section.
  • the bottom of the insulating substrate 4 can form a plane butt joint with the fixing groove 3 of the metal base, so that the installation is more reliable and the electrical conductivity is better.
  • the bottom metal layer 6 is set on the bottom of the insulating substrate 4. In the unassembled state, when the two sides of the insulating substrate 4 are in a vertical state, the bottom surface is a chamfered bottom surface, and the bottom metal layer 6 is arranged on the chamfered bottom surface, so the bottom metal layer Layer 6 may also be referred to as a "ceramic bevel electroplated copper layer".
  • the top of the metal cap tube 11 is provided with an oblique section parallel to the detector chip 14, and the signal receiving window 12 is set on the oblique section; the signal receiving window 12 is provided with a plane lens 13, and the plane lens 13 is adhered On the inner wall of the inclined plane, that is, the plane lens 13 is fixed on the inclined inner wall 22 of the metal cap tube.
  • the oblique plane is parallel to the insulating substrate 4 , so that the detector chip 14 can accurately receive the ultraviolet light irradiated through the oblique light receiving window, that is, the signal receiving window 12 .
  • the plane lens 13 can be combined with the inner wall of the signal receiving window 12 through an adhesive to form a closed cavity cap.
  • the outer ring of the metal base 1 is provided with a metal base step 23, and the metal cap tube 11 is buckled upside down on the metal base step 23.
  • metal solder By applying metal solder on the metal cap tube 11 and the metal base step 23, the The two are welded as a whole to form a highly airtight airtight cavity that can protect the long-term stability of the detector chip 14 .
  • the inclination angle ⁇ of the slope to be tested, the insulating substrate 4, the detector chip 14, and the signal receiving window 12 can be 0° to 90°.
  • the inclination angle ⁇ of the signal receiving window 12 is set to 30° ⁇ 80°, the included angle between the above-mentioned "beveled bottom surface" and the front side of the insulating substrate 4 (the side on which the detector chip 14 is installed) is the same as the setting angle of ⁇ .
  • this embodiment proposes a method for manufacturing the packaging structure of the above-mentioned slope detector device, which mainly includes the following steps:
  • Step 1 Weld the insulating substrate on the metal base;
  • Step 2 setting the front conductive layer and the back conductive layer respectively on both sides of the insulating substrate, and electrically connecting the front conductive layer and the back conductive layer;
  • Step 3 welding the detector chip on the front conductive layer of the insulating substrate
  • Step 4 welding the first metal via post 10 on the back conductive layer of the insulating substrate;
  • Step 5 welding the metal cap tube to the metal base to form a sealed cavity for protecting the detector chip.
  • the insulating substrate 4 of the insulating functional module 18 is formed by cutting a rectangular ceramic substrate.
  • the two short sides of the ceramic substrate are cut at 45 degrees, and two via holes 16 are formed on the ceramic substrate by laser drilling.
  • Electroplating fills the via hole position 16 to form the second metal via post 5, and then electroplates the copper layer on the front of the ceramic (ie, the front conductive layer 15) and the electroplated copper layer on the back of the ceramic (ie, the back conductive layer 7) on the front and back of the ceramic substrate.
  • the electroplated copper layer (i.e. front conductive layer 15) on the front side of the electroplated ceramic and the electroplated copper layer (i.e. back conductive layer 7) on the back side of the electroplated ceramic are conducted through the above-mentioned second metal conduction column 5 to form conduction between the front and back sides of the ceramic substrate.
  • the beveled surfaces of the two short sides of the ceramic substrate are inclined at 45 degrees, and the electroplated copper layer on the beveled surface at the bottom forms the bottom metal layer 6, thereby realizing the electroplating combination of three surfaces of the ceramic substrate.
  • the back conductive layer 7 preferably continues to thicken the electroplated copper layer on the back conductive layer 7 to open the back conductive functional block fixing groove 17. are equal in size.
  • the alloy metal block is processed by a machine tool into a metal base 1 with a metal base fixing groove 3 and a metal base step 23, and two metal base through holes 2 are processed in the metal base 1 by a punching machine, and the two metal bases pass through
  • the positions of the holes 2 are in one-to-one correspondence with the positions of the two rear conducting functional block fixing grooves 17 on the insulating functional module 18 .
  • the first metal via post 10 can be machined into a metal via post slope 9 with a slope of 45 degrees.
  • the fixing groove 3 is filled with metal silver copper solder, and the bottom metal layer 6 of the insulating function module 18 is put into the fixing groove 3 of the metal base, and fixed by a jig; wherein the conductive function block fixing groove 17 on the back side of the insulating function module 18 is filled with Metal silver-copper solder, the metal conduction column slope 9 of the first metal conduction column 10 passes through the metal base through hole 2, inserts the conductive functional block fixing groove 17 on the back, and is fixed by a jig; the metal base 1, the insulating function module 18 1.
  • the first metal via post 10 is fixed together by a jig, and then the three can be welded into a whole at a high temperature of 600-1000° C., that is,
  • the detector chip 14 is placed on the front conductive functional block 21 by placing the front conductive functional block 21 of the jig horizontally, and the two can be welded together by high temperature.
  • the detector chip 14 and the front conductive functional area The block 21 , the back conductive functional block 19 , and the first metal conduction column 10 form a circuit conduction loop.
  • the first metal conducting column 10 is penetrated in the through hole 20 of the insulating column with holes in the metal base 8 , and then The first metal conducting post 10 and the insulating post with holes in the metal base 8 can be bonded together by heating, and the insulating post with holes in the metal base 8 can fix and insulate the first metal conducting post 10 .
  • the metal cap tube 11 is formed by processing the metal sheet into a hat shape symmetrical to the central axis, and then cutting a gap (chamfer) on one side of the top of the cap, and further processing the signal receiving window 12 through a mold. Apply adhesive to the inclined inner wall 22 of the metal cap tube of the signal receiving window 12 to combine the plane lens 13 with the inclined inner wall 22 of the metal cap tube.
  • smear medium and low temperature metal solder on the metal base step 23 place the metal cap tube 11 on the metal base step 23 coated with low temperature metal solder on the metal base 1, and control the temperature to connect the metal base 1 and the metal cap.
  • the tubes 11 are welded together to form a sealed cavity for the detector chip 14 to protect the conduction loop of the aforementioned circuit, thereby forming a packaging structure for the inclined-plane detector, which can accurately detect the inclined-plane structure.
  • the packaging structure of the slope detector device proposed by the present invention has a novel and reasonable structure.
  • the signal receiving window and the detector chip By setting the signal receiving window and the detector chip to be parallel to the slope to be measured, not only can the slope be directly tested under the condition that the performance of the detection device is good, structure detection, so as to meet the requirements of detection devices for slope structure detection applications, and enable the detector chip to receive all the radiation flux (such as light, etc.) injected from the signal receiving window, compared with the traditional metal cap tube will
  • the signal receiving window is set on the top of the cap tube, which can better ensure the application link's demand for radiation flux, improve the detection accuracy of the detector device for inclined-plane structures, and thus solve the problem of poor performance of the detector device in the existing technology and the problem of radiation flux due to The low acceptance rate affects the detection accuracy of the detection device.
  • the insulating functional module to support the detector chip and related conductive components, the packaging technology of the detector chip on the slope structure is realized, and the integration and installation stability of the structure are improved, which is conducive to improving the detection accuracy of the slope structure. Solve the current problem of slope detection and data collection.
  • the insulation function module of the present invention has a three-dimensional structure as a whole.
  • it is welded and fixed with the metal base and the first metal conducting column, which can effectively improve the firmness and stability of the inclined-plane detection structure. .

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Measurement Of Radiation (AREA)

Abstract

La présente invention concerne une structure d'emballage de dispositif de détection de plan incliné, comprenant une base métallique, un module de fonction d'isolation, une puce de détecteur, une première colonne de conduction métallique et un tube de capuchon métallique. Selon la présente invention, une fenêtre de réception de signal et une puce de détecteur sont agencées de façon à être parallèles à un plan incliné à détecter, de telle sorte que ladite structure de plan incliné peut être directement détectée dans la condition selon laquelle la performance du dispositif de détection est bonne de manière à satisfaire l'exigence de l'application de détection de la structure de plan incliné concernant le dispositif de détection, et la puce de détecteur peut recevoir tous les flux de rayonnement (tels que des rayons lumineux) incidents provenant de la fenêtre de réception de signal. Par comparaison avec un capuchon de tube métallique classique dans lequel la fenêtre de réception de signal est disposée au sommet du tube de capuchon, l'exigence d'une liaison d'application pour le flux de rayonnement peut être mieux garantie, la précision de détection d'un détecteur pour la structure de plan incliné est améliorée, les problèmes selon lesquels la performance du détecteur est faible et la précision de détection du détecteur est affectée en raison du faible taux de réception de flux de rayonnement dans l'état de la technique sont résolus.
PCT/CN2022/086477 2021-11-04 2022-04-13 Structure d'emballage de dispositif de détection de plan incliné et son procédé de fabrication WO2023077725A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202111296649.9A CN113725303B (zh) 2021-11-04 2021-11-04 斜面探测器件封装结构及其制作方法
CN202111296649.9 2021-11-04

Publications (1)

Publication Number Publication Date
WO2023077725A1 true WO2023077725A1 (fr) 2023-05-11

Family

ID=78686630

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2022/086477 WO2023077725A1 (fr) 2021-11-04 2022-04-13 Structure d'emballage de dispositif de détection de plan incliné et son procédé de fabrication

Country Status (2)

Country Link
CN (1) CN113725303B (fr)
WO (1) WO2023077725A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113725303B (zh) * 2021-11-04 2022-02-11 至芯半导体(杭州)有限公司 斜面探测器件封装结构及其制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101232150A (zh) * 2007-01-24 2008-07-30 中国科学院半导体研究所 To封装的垂直腔面发射激光器
US20080181270A1 (en) * 2007-01-29 2008-07-31 Lin Ta-Tsung Packaging structure for the horizontal cavity surface emitting laser diode with monitor photodiode
US20120287955A1 (en) * 2011-05-10 2012-11-15 Shinko Electric Industries Co., Ltd. Optical semiconductor element package and optical semiconductor device
CN204595261U (zh) * 2015-04-23 2015-08-26 东莞光智通讯科技有限公司 光器件
CN207181759U (zh) * 2017-09-19 2018-04-03 广东瑞谷光网通信股份有限公司 一种可插拔式多横模光发射组件
CN210838436U (zh) * 2019-09-27 2020-06-23 武汉高跃科技有限责任公司 一种内置隔离器可平行出光的to封装半导体激光器
CN112202046A (zh) * 2020-08-28 2021-01-08 武汉联特科技有限公司 一种新型to封装结构
CN213483755U (zh) * 2020-11-26 2021-06-18 广州名扬光电科技有限公司 具有斜窗的to-can单pin管
CN113725303A (zh) * 2021-11-04 2021-11-30 至芯半导体(杭州)有限公司 斜面探测器件封装结构及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2661521B2 (ja) * 1993-09-25 1997-10-08 日本電気株式会社 半導体受光装置
JP3208996B2 (ja) * 1994-05-20 2001-09-17 安藤電気株式会社 偏光依存性の少ない受光方法および受光モジュール
KR100532326B1 (ko) * 2004-01-15 2005-11-29 삼성전자주식회사 반도체 광패키지
KR20140090031A (ko) * 2013-01-08 2014-07-16 조호성 To 캔 패키지 반사형 레이저 다이오드 모듈

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101232150A (zh) * 2007-01-24 2008-07-30 中国科学院半导体研究所 To封装的垂直腔面发射激光器
US20080181270A1 (en) * 2007-01-29 2008-07-31 Lin Ta-Tsung Packaging structure for the horizontal cavity surface emitting laser diode with monitor photodiode
US20120287955A1 (en) * 2011-05-10 2012-11-15 Shinko Electric Industries Co., Ltd. Optical semiconductor element package and optical semiconductor device
CN204595261U (zh) * 2015-04-23 2015-08-26 东莞光智通讯科技有限公司 光器件
CN207181759U (zh) * 2017-09-19 2018-04-03 广东瑞谷光网通信股份有限公司 一种可插拔式多横模光发射组件
CN210838436U (zh) * 2019-09-27 2020-06-23 武汉高跃科技有限责任公司 一种内置隔离器可平行出光的to封装半导体激光器
CN112202046A (zh) * 2020-08-28 2021-01-08 武汉联特科技有限公司 一种新型to封装结构
CN213483755U (zh) * 2020-11-26 2021-06-18 广州名扬光电科技有限公司 具有斜窗的to-can单pin管
CN113725303A (zh) * 2021-11-04 2021-11-30 至芯半导体(杭州)有限公司 斜面探测器件封装结构及其制作方法

Also Published As

Publication number Publication date
CN113725303B (zh) 2022-02-11
CN113725303A (zh) 2021-11-30

Similar Documents

Publication Publication Date Title
WO2019161755A1 (fr) Module secondaire optique et module lumineux
JP6614811B2 (ja) 半導体装置用ステム及び半導体装置
CN112202046B (zh) 一种新型to封装结构
US20200203922A1 (en) To-can packaged laser and optical module
WO2023077725A1 (fr) Structure d'emballage de dispositif de détection de plan incliné et son procédé de fabrication
JPH0824150B2 (ja) パッケージ
CN108075350A (zh) 同轴封装激光器
CN212031793U (zh) 一种光模块
CN113534366A (zh) 高密cpo硅光引擎
US10365446B2 (en) Optical module structure
CN108172633A (zh) 一种半导体器件的封装结构
US12003074B2 (en) Multichannel parallel light emitting device
JP2007109715A (ja) 光半導体素子用パッケージおよび光半導体装置
CN105789141A (zh) 一种微组装小型化的三维微波电路结构
CN112987204A (zh) 可调节的可无源耦合的多通道光收发组件及气密封装方法
CN210866221U (zh) 一种陶瓷光电耦合器
CN114497330B (zh) 一种to紫外器件封装结构
CN113534359A (zh) 一种光模块
CN111416273A (zh) 一种可制冷高速半导体激光二极管的封装结构
CN110828606A (zh) 一种陶瓷光电耦合器及其制造方法
CN207651795U (zh) 同轴封装激光器
CN213602645U (zh) 一种光模块
CN207818576U (zh) 半导体器件的封装结构
CN112349689B (zh) 一种六层布线lcp封装基板、制造方法及多芯片系统级封装结构
CN209357725U (zh) 透镜一体化红外对管模组以及具有该模组的红外传感器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22888764

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE