WO2023066324A1 - 麦克风结构、封装结构及电子设备 - Google Patents

麦克风结构、封装结构及电子设备 Download PDF

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Publication number
WO2023066324A1
WO2023066324A1 PCT/CN2022/126332 CN2022126332W WO2023066324A1 WO 2023066324 A1 WO2023066324 A1 WO 2023066324A1 CN 2022126332 W CN2022126332 W CN 2022126332W WO 2023066324 A1 WO2023066324 A1 WO 2023066324A1
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WO
WIPO (PCT)
Prior art keywords
substrate
metal part
metal
sound hole
microphone structure
Prior art date
Application number
PCT/CN2022/126332
Other languages
English (en)
French (fr)
Inventor
李�浩
梅嘉欣
乔立峰
Original Assignee
苏州敏芯微电子技术股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN202122557541.2U external-priority patent/CN216054695U/zh
Priority claimed from CN202122558224.2U external-priority patent/CN215935103U/zh
Priority claimed from CN202122558222.3U external-priority patent/CN215935102U/zh
Priority claimed from CN202122558079.8U external-priority patent/CN216626051U/zh
Priority claimed from CN202122559478.6U external-priority patent/CN216626052U/zh
Priority claimed from CN202122559204.7U external-priority patent/CN216491057U/zh
Priority claimed from CN202122557690.9U external-priority patent/CN215935100U/zh
Priority claimed from CN202122557970.XU external-priority patent/CN215935101U/zh
Priority claimed from CN202122557968.2U external-priority patent/CN216054696U/zh
Application filed by 苏州敏芯微电子技术股份有限公司 filed Critical 苏州敏芯微电子技术股份有限公司
Publication of WO2023066324A1 publication Critical patent/WO2023066324A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H05F3/02—Carrying-off electrostatic charges by means of earthing connections

Definitions

  • the application number is 202122557968.2, the application date is October 22, 2021, and the invention name is packaging structure, circuit board and electronic equipment;
  • the application number is 202122557541.2, the application date is October 22, 2021, and the invention name is packaging structure, circuit board and electronic equipment;
  • the application number is 202122557970.X, the application date is October 22, 2021, and the title of the invention is microphone structure and electronic equipment;
  • the application number is 202122559478.6, the application date is October 22, 2021, and the invention name is microphone structure, packaging structure and electronic equipment;
  • the application number is 202122558079.8, the application date is October 22, 2021, and the title of the invention is a microphone assembly, a microphone packaging structure and electronic equipment with the same;
  • the application number is 202122559204.7, the application date is October 22, 2021, and the title of the invention is a microphone structure and electronic equipment;
  • the application number is 202122557690.9, the application date is October 22, 2021, and the invention name is a microphone structure, packaging structure and electronic equipment;
  • the application number is 202122558222.3, the application date is October 22, 2021, and the invention name is a microphone structure and electronic equipment;
  • the application number is 202122558224.2, the application date is October 22, 2021, and the title of the invention is a microphone structure, packaging structure and electronic equipment.
  • the present application relates to the technical field of micro-electromechanical systems, and in particular to a microphone structure, packaging structure and electronic equipment.
  • MEMS Micro-Electro-Mechanical System
  • PCB printed Circuit Board, printed circuit board
  • ESD Electrostatic Discharge
  • the purpose of this application is to provide a microphone structure, packaging structure and electronic equipment to solve the problem of irreversible damage to the device due to electrostatic discharge.
  • the application provides a microphone structure, including:
  • the base component includes at least one substrate, the at least one substrate includes a first substrate, the first substrate has a first surface and a second surface opposite to the first surface, the first substrate is provided with an acoustic hole passing through the first substrate;
  • a functional component which includes a first functional component and a second functional component
  • the first functional component includes an acoustic device and a third functional component, the acoustic device is used to receive sound waves from the sound hole, the first functional component
  • the component is located on the first surface of the first substrate, and the second functional component is located on the second surface of the first substrate;
  • the third functional component includes a first metal part and a first insulating part, the first metal part is arranged on the first surface of the first substrate, and the first insulating part covers part or all of the first insulating part.
  • a metal part; the second functional component includes a second metal part and a second insulating part, the second metal part is arranged on the second surface of the first substrate, and the second insulating part covers part of the first two metal parts so that the second metal part is exposed toward one end of the sound hole, the first metal part is used for electrical connection with the first substrate, and the second metal part is used for connecting with the The ground of the first substrate or the circuit for discharging static electricity are electrically connected, and the first metal part and the second metal part are arranged around the sound hole.
  • the first metal part further includes an extension part, the extension part covers the inner edge of the sound hole and is electrically connected to the second metal part, and the second metal part includes The exposed area of the second surface of the first substrate, the exposed area is the entire area or a partial area of the second metal component.
  • the distance between the first metal part and the sound hole plus the thickness of the first substrate is greater than the distance between the second metal part and the sound hole, and/or the first metal
  • the area of the first metal part is smaller than the area of the second metal part, and/or the distance between the first metal part and the sound hole is greater than the distance between the second metal part and the sound hole.
  • the second metal part includes a first grounding part and a second grounding part, and both the first grounding part and the second grounding part are arranged around the sound hole.
  • first grounding part and the second grounding part are both metal rings, and the outer diameter of the first grounding part is smaller than the inner diameter of the second grounding part, and the sound hole is located in the first grounding part An annular area defined by the inside diameter of a component.
  • the width of the metal ring constituting the first grounding component is smaller than the width of the metal ring constituting the second grounding component.
  • the first ground component and the second ground component are electrically connected to the first metal part through a through hole penetrating through the first substrate.
  • the sum of the distance between the first metal part and the central axis of the sound hole plus the distance from the first metal part to the outer surface of the second functional component in the direction of the central axis of the sound hole greater than the sum of the distance between the first grounding component and the central axis of the sound hole plus the distance from the first grounding component to the outer surface of the second functional component in the direction of the central axis of the sound hole, and/or Or the area of the first metal portion is smaller than the area of the first ground member.
  • the base component further includes a second substrate, the second substrate is located on a side of the first substrate away from the acoustic device, and the second functional component further includes a sound guide tube and a complete machine casing , the sound guide tube is located on the second surface of the first substrate and runs through the second substrate and the complete machine casing, and the first substrate, the second substrate and the complete machine casing all surround the sound hole set.
  • a metal block is provided on the inner wall of the sound guide tube at an end away from the acoustic device, and the metal block is exposed toward the central axis of the sound hole.
  • the thickness of the metal block is smaller than the wall thickness of the sound guiding tube body, and the length of the metal block along the axis of the tube body is smaller than the length of the sound guiding tube body.
  • the sound guide tube forms a bent passage between the second base plate and the complete machine casing, and the path length of the bent passage is greater than that from the second substrate to the complete machine shell The sound wave enters the sound hole through the curved passage.
  • the sound guide tube includes a first opening and a second opening, the first opening communicates with the sound hole, the second opening communicates with the external space, and the first opening communicates with the sound hole.
  • the central axis and the central axis of the second opening are mutually staggered.
  • At least one pointed portion is provided on the second metal portion, one end of the pointed portion is attached to the inner edge of the second metal portion, and the other end extends toward the geometric center of the sound hole.
  • the length of the tip part is greater than or equal to the distance from the inner edge of the second metal part to the edge of the sound hole.
  • the projection of each of the tip portions on the second surface of the first substrate is an acute triangle, and one sharp corner of each acute triangle points to the geometric center of the acoustic hole.
  • the second metal part is provided with an electrostatic interception part at one end close to the sound hole, and the projection of the electrostatic interception part in a direction perpendicular to the first substrate covers part of the sound hole at the end of the sound hole. projection in the direction.
  • the electrostatic interception part includes at least one baffle, and the at least one baffle blocks part of the sound hole.
  • the third functional component further includes an electrostatic diversion device, and the electrostatic diversion device is used to absorb the ESD arc entering the acoustic device and pass through the first metal part and the second metal part Electricity is released.
  • a groove is provided on the first surface of the first substrate, and the groove protrudes in a direction away from the acoustic device and is used for placing the electrostatic dredging device.
  • the depth of the groove is greater than or equal to the height of the electrostatic dredging device.
  • the electrostatic diversion device is a diode device, an anode of the diode device is electrically connected to the acoustic device, and a cathode of the diode device is connected to the first metal part.
  • the present application also provides a packaging structure, which includes the microphone structure described in any one of the above items.
  • the present application also provides an electronic device, which includes the microphone structure described in any one of the above items.
  • the microphone structure sets the sound hole on the base component, and the acoustic device is set on the first functional component.
  • the dielectric strength is greater than the dielectric strength of the second functional component, and the ESD arc will be attracted by the second functional component with lower dielectric strength, so that it is not easy to hit the acoustic device through the sound hole, which protects the acoustic device and improves the performance of the acoustic device. ESD protection performance.
  • FIG. 1 is one of the structural schematic diagrams of the microphone structure provided by the present application.
  • FIG. 2A is the second structural schematic diagram of the microphone structure provided by the present application.
  • FIG. 2B is the third structural schematic diagram of the microphone structure provided by the present application.
  • FIG. 2C is the fourth structural schematic diagram of the microphone structure provided by the present application.
  • FIG. 2D is the fifth structural schematic diagram of the microphone structure provided by the present application.
  • FIG. 3A is a first structural schematic diagram of the microphone structure provided in the first embodiment of the present application.
  • Figure 3B is a bottom view of Figure 3A;
  • FIG. 3C is a schematic diagram of the second structure of the microphone structure provided in the first embodiment of the present application.
  • FIG. 3D is a schematic diagram of a third structure of the microphone structure provided in the first embodiment of the present application.
  • FIG. 3E is a schematic diagram of a fourth structure of the microphone structure provided in the first embodiment of the present application.
  • FIG. 3F is a schematic diagram of a fifth structure of the microphone structure provided in the first embodiment of the present application.
  • FIG. 4A is a schematic structural diagram of the microphone structure provided in the second embodiment of the present application.
  • Figure 4B is a bottom view of Figure 4A;
  • FIG. 5A is a schematic diagram of the first structure of the microphone structure provided by the third embodiment of the present application.
  • Figure 5B is a bottom view of Figure 5A;
  • FIG. 5C is a schematic diagram of the second structure of the microphone structure provided by the third embodiment of the present application.
  • FIG. 6A is a schematic structural diagram of a microphone structure provided in a fourth embodiment of the present application.
  • Figure 6B is a bottom view of Figure 6A;
  • FIG. 7A is a schematic diagram of the first structure of the microphone structure provided by the fifth embodiment of the present application.
  • Figure 7B is a bottom view of Figure 7A;
  • FIG. 7C is a schematic diagram of the second structure of the microphone structure provided in the fifth embodiment of the present application.
  • Figure 7D is a bottom view of Figure 7C
  • FIG. 7E is a schematic diagram of the third structure of the microphone structure provided in the fifth embodiment of the present application.
  • Figure 7F is a bottom view of Figure 7E
  • FIG. 8A is a schematic diagram of the first structure of the microphone structure provided by the sixth embodiment of the present application.
  • FIG. 8B is a schematic diagram of the second structure of the microphone structure provided by the sixth embodiment of the present application.
  • FIG. 9A is a schematic diagram of the first configuration of the microphone structure provided by the seventh embodiment of the present application.
  • FIG. 9B is a schematic diagram of the second configuration of the microphone structure provided by the seventh embodiment of the present application.
  • FIG. 10 is a schematic diagram of a package structure provided in the first embodiment of the present application.
  • FIG. 11 is a schematic diagram of a packaging structure provided by the second embodiment of the present application.
  • FIG. 12 is a schematic diagram of a packaging structure provided by a third embodiment of the present application.
  • FIG. 13 is a schematic diagram of a packaging structure provided by a fourth embodiment of the present application.
  • the embodiment of the present application provides a microphone structure 10 , which includes a basic component 100 and a functional component 200 .
  • the base component 100 includes at least one substrate, the at least one substrate includes a first substrate 110, the first substrate 110 has a first surface 1101 and a second surface 1102 opposite to the first surface 1101, the first substrate 110 is set There is an acoustic hole 120 penetrating through the first substrate 110 in the thickness direction.
  • the first substrate 110 may be a glass substrate or made of a resin material.
  • the functional component 200 includes a first functional component 210 and a second functional component 220, the first functional component 210 includes an acoustic device 2101-1 and a third functional component 2101-2, the acoustic device 2101-1 is used to receive the For the acoustic wave of the hole 120 , the first functional component 210 is located on the first surface 1101 of the first substrate 110 , and the second functional component is located on the second surface 1102 of the first substrate 110 .
  • the third functional component 2101-2 includes a first metal part 2102 and a first insulating part 2103, the first metal part 2102 is disposed on the first surface 1101 of the first substrate 110, and the first insulating part 2103 covers part or all of the first Metal part 2102.
  • the second functional component 220 includes a second metal part 2201 and a second insulating part 2202, the second metal part 2201 is disposed on the second surface 1102 of the first substrate 110, and the second insulating part 2202 covers part of the second metal part 2201 so that the second Two metal parts 2201 are exposed towards the end of the acoustic hole 120, the first metal part 2102 is used to electrically connect to the ground of the first substrate 110, and the second metal part 2201 is used to electrically connect to the ground of the first substrate 110 or a circuit for discharging static electricity , the first metal part 2102 and the second metal part 2201 are both disposed around the acoustic hole 120 .
  • the dielectric strength of the second functional component 220 can be made smaller than the dielectric strength of the third functional component 2101-2.
  • Dielectric strength is a measure of the electric strength of a material when it acts as an insulator. It is defined as the maximum voltage per unit thickness that a specimen is subjected to when it is broken down, expressed in volts per unit thickness. The greater the dielectric strength of a substance, the better its quality as an insulator. The value of dielectric strength can be obtained by instrumental measurement.
  • the shape of the sound hole 120 may be a circle, or a polygon, such as a triangle, a quadrangle, a pentagon, and the like.
  • the ESD arc when an ESD arc strikes from the side of the first substrate 110 away from the acoustic device 2101-1, the ESD arc will be attracted by the second functional component 220 with lower dielectric strength, and It is not easy to be attracted by the third functional component 2101-2, so it is not easy to hit the acoustic device 2101-1 through the sound hole 120, which protects the acoustic device 2101-1 and improves the ESD protection performance of the acoustic device 2101-1.
  • the third functional component 2101-2 further includes a first metal part 2102 and a first insulating part 2103, the first metal part 2102 is arranged on the first surface 1101 of the first substrate 110, the first insulating part
  • the portion 2103 covers part or all of the first metal portion 2102
  • the first insulating portion 2103 shown in FIG. 2A covers part of the first metal portion 2102
  • the first insulating portion 2103 shown in FIG. 2B covers the entire first metal portion 2102 .
  • the second functional component 220 includes a second metal part 2201 and a second insulating part 2202, the second metal part 2201 is disposed on the second surface 1102 of the first substrate 110, and the second insulating part 2202 covers part of the second metal part 2201 to The second metal part 2201 is exposed toward the end of the acoustic hole 120, the first metal part 2102 is used for electrical connection with the ground of the first substrate 110, and the second metal part 2201 is used for the ground of the first substrate 110 or a circuit for discharging static electricity (not shown in the figure) are electrically connected, and both the first metal part 2102 and the second metal part 2201 are arranged around the acoustic hole 120 .
  • the orthographic projection of the first metal part 2102 on the first substrate 110 may be located within the orthographic projection of the acoustic device 2101 - 1 on the first substrate 110 .
  • the first metal part 2102 is located below the acoustic device 2101-1, and the first metal part 2102 can be electrically connected to the ground of the first substrate 110, so that the first metal part 2102 can be used as a ground metal part of the acoustic device 2101-1, or as a Metal ground to reduce interference.
  • the orthographic projection of the second metal part 2201 on the first substrate 110 may be located within the orthographic projection of the acoustic device 2101 - 1 on the first substrate 110 .
  • the second metal part 2201 is correspondingly located below the acoustic device 2101-1, and the second metal part 2201 and the first metal part 2102 are oppositely arranged.
  • the second metal part 2201 can be used for electrical connection with the ground of the first substrate 110 , so that the second metal part 2201 can be used as a metal ground for reducing interference.
  • the second metal part 2201 may also be electrically connected to the circuit for discharging static electricity, and the second metal part 2201 may guide the ESD arc to the circuit for discharging static electricity for discharge.
  • a circuit for discharging static electricity may be disposed on the first substrate 110 . If the first substrate 110 is installed on other structures, the second metal part 2201 may be electrically connected to the static electricity discharging circuits of other structures.
  • the first metal part 2102 and the second metal part 2201 can be electrically connected to the ground through other lines of the conductive layer where the first metal part 2102 and The second metal portion 2201 may also be directly electrically connected through a circuit in a via hole (or referred to as a through hole) of the first substrate 110 .
  • the embodiment of the present invention does not limit the circuit electrically connecting the first metal part 2102 and the second metal part 2201 to the ground.
  • the third functional component 2101-2 and the second functional component 220 may be an area within the same range surrounding the acoustic hole 120 and located below the acoustic device 2101-1. If the dielectric strength of the third functional component 2101-2 is basically the same as that of the second functional component 220, when the ESD arc hits the acoustic hole 120, since the dielectric strength of the third functional component 2101-2 and the second functional component 220 are consistent , the ESD arc will hit the second functional component 220 or the third functional component 2101-2 randomly.
  • the embodiment of the present invention implements the present invention by changing the structure of the second functional component 220 or the third functional component 2101-2 in the related art, for example, increasing the dielectric strength of the third functional component 2101-2 in the related art
  • the dielectric strength of the third functional component 2101-2 in the example is greater than the dielectric strength of the second functional component 220, which solves the problem that in the related art, the ESD arc hits the acoustic device 2101-1 through the sound hole, and the acoustic device 2101-1 The problem of causing harm.
  • the third functional component 2101-2 in FIG. 2A includes a first metal part 2102 and a first insulating part 2103.
  • the three-function component 2101 - 2 may not include the first metal part 2102 , that is, the third function component 2101 - 2 only includes the first insulating part 2103 , and the first insulating part 2103 is directly adjacent to the first substrate 110 .
  • the second functional component 220 may include a second metal part 2201 and a second insulating part 2202 , and the second metal part 2201 is disposed between the second insulating part 2202 and the first substrate 110 .
  • the first metal part 2102 may not be provided on the side of the first substrate 110 facing the acoustic device 2101-1, but the first insulating part 2103 is directly provided on the first substrate 110, and the first substrate 110 is away from the other side of the acoustic device 2101-1.
  • a second metal part 2201 and a second insulating part 2202 are provided in sequence. Because the third functional component 2101-2 does not have the first metal part 2102, but only the first insulating part 2103, and the second functional component 220 includes the second metal part 2201 and the second insulating part 2202, so there is no first metal part 2102.
  • the dielectric strength of the three-functional component 2101 - 2 is significantly greater than that of the second functional component 220 with the second metal part 2201 .
  • the ESD arc will be attracted by the second functional component 220 with the second metal part 2201, and not easily attracted by the third functional component 2101-2 without the first metal part, so as not to It is easy to hit the acoustic device 2101-1 through the sound hole 120, which protects the acoustic device 2101-1 and improves the ESD protection performance of the acoustic device 2101-1.
  • the second metal part 2201 may be partially exposed to the second insulating part 2202, so as to better attract the ESD arc.
  • the second metal part 2201 can also have other functions, for example, the second metal part 2201 has a grounding function, which can reduce the interference near the sound hole 120 .
  • the second metal part 2201 serves as a pad, and the second metal part 2201 can be electrically connected to other functional devices.
  • the second metal part 2201 may also be completely covered by the second insulating part 2202 .
  • the second metal part 2201 can be grounded, and the interference near the acoustic hole 120 can be reduced.
  • the second metal part 2201 may also perform other functions, for example, the second metal part 2201 serves as a pad for electrical connection with other functional devices.
  • the second metal part 2201 may also be connected to a circuit for discharging static electricity, thereby discharging static electricity.
  • the second metal portion 2201 shown in FIG. 2C may include a bare sub-portion 22015, the orthographic projection of the bare sub-portion 22015 on the first substrate 110 is located within the orthographic projection of the acoustic device 2101-1 on the first substrate 110, and the exposed sub-portion 22015 deviates from One side of the first substrate 110 is exposed to the second insulating portion 2202 so as to better attract ESD arcs.
  • the exposed sub-part 22015 may be located in the middle of the second metal part 2201 . In some other embodiments, the exposed sub-part 22015 may also be located at the edge of the second metal part 2201 facing the sound hole 120 .
  • the material of the first metal part 2102 and the second metal part 2201 may be a material with high electrical conductivity, such as copper.
  • the first insulating part 2103 and the second insulating part 2202 may be an ink protection layer.
  • the acoustic device 2101-1 can be a micro-electro-mechanical system 2104 (Micro-Electro-Mechanical System, MEMS), an application specific integrated circuit 2105 (Application Specific Integrated Circuit, ASIC), and of course the acoustic device 2101-1 can also be of other structures devices such as microphones or speakers.
  • MEMS Micro-Electro-Mechanical System
  • ASIC Application Specific Integrated Circuit
  • the micro-electromechanical system (MEMS) 2104 is electrically connected to the application-specific integrated circuit 2105 through wires
  • the application-specific integrated circuit (ASIC) 2105 is electrically connected to the pad 180 on the first substrate 110 through wires, and the pad 180 can be located on the first substrate 110 toward One side of the acoustic device 2101-1, and the pad 180 can also be located on the other side of the first substrate 110 away from the acoustic device 2101-1, and the pad 180 on both sides of the first substrate 110 can pass through the via hole of the first substrate 110
  • the conductive parts or connecting parts are electrically connected to facilitate the electrical connection between the acoustic device 2101-1 and other circuits.
  • the ESD arc when an ESD arc hits from the side of the first substrate 110 away from the acoustic device 2101-1, the ESD arc will be attracted by the second metal part 2201 with lower dielectric strength, and It is not easy to be attracted by the first metal part 2102, so it is not easy to hit the acoustic device 2101-1 through the sound hole 120, which protects the acoustic device 2101-1 and improves the ESD protection performance of the acoustic device 2101-1.
  • the microphone structure 10 includes a basic component 100 and a functional component 200 .
  • the base component 100 includes a first substrate 110
  • the first substrate 110 is provided with an acoustic hole 120
  • the functional component 200 includes a first functional component 210 and a second functional component 220 located on both sides of the first substrate 110 .
  • the first functional component 210 includes an acoustic device 2101 - 1 , a third functional component 2101 - 2 , a first metal part 2102 and a first insulating part 2103 .
  • the second functional component 220 includes a second metal part 2201 and a second insulating part 2202 .
  • the third functional component 2101-2 is disposed on the side of the first substrate 110 facing the acoustic device 2101-1, the second functional component 220 is disposed on the side of the first substrate 110 away from the acoustic device 2101-1, the third functional component 2101-2 and The second functional components 220 are all arranged around the sound holes 120 .
  • the acoustic device 2101 - 1 is installed on the third functional component 2101 - 2 , and the acoustic device 2101 - 1 is arranged opposite to the sound hole 120 .
  • Fig. 3A and Fig. 3B are based on Fig. 2A and limit the distance between the first metal part 2102 and the second metal part 2201.
  • the first structure shown in Fig. 3A is the first metal part 2102 and the second metal part 2201.
  • the distance L1 of the acoustic hole 120 plus the thickness H of the first substrate 110 is greater than the distance L2 between the second metal part 2201 and the acoustic hole 120 , that is, L1+H>L2.
  • the ground (GND) wiring usually covers the entire first substrate as much as possible. Both sides of the first substrate are provided with GND wiring, so that the side of the first substrate facing the microphone and other semiconductor device products (GND grounding) and the side of the first substrate facing away from the microphone have exposed and leaked metal.
  • the dielectric strength is basically the same.
  • the acoustic device 2101-1 of the first functional component 210 is disposed on the side of the first substrate 110, and the second functional component 220 is disposed on the side of the first substrate 110 away from the acoustic device 2101-1. Since the first metal The distance L1 between the portion 2102 and the acoustic hole 120 plus the thickness H of the first substrate 110 is greater than the distance L2 between the second metal portion 2201 and the acoustic hole 120 , that is, L1+H>L2. When an ESD arc hits the sound hole 120 from the side of the first substrate 110 away from the acoustic device 2101-1, the ESD arc will be attracted by the second metal part 2201 which is closer.
  • the dielectric strength of the third functional component 2101-2 is greater than that of the second functional component 220, and the ESD arc will be attracted by the second functional component 220 with lower dielectric strength, but not easily attracted by the third functional component 2101-2. Attraction, so that it is not easy to hit the acoustic device 2101-1 through the sound hole 120, which protects the acoustic device 2101-1 and improves the ESD protection performance of the acoustic device 2101-1. It solves the problem in the related art that the ESD arc hits the acoustic device 2101-1 through the sound hole and causes damage to the acoustic device 2101-1.
  • the distance between the first metal part 2102 and the acoustic hole 120 may be equal to or slightly smaller than the distance between the second metal part 2201 and the acoustic hole 120, for example, the distance between the first metal part 2102 and the acoustic hole 120 plus the thickness of the first substrate 110 It is greater than the distance between the second metal part 2201 and the sound hole 120 .
  • the distance between the first metal part 2102 and the sound hole 120 shown in FIG. 3C may be greater than the distance between the second metal part 2201 and the sound hole 120 , that is, L1>L2. That is, defining L1>L2 in FIG. 3C shows the second structure.
  • the area of the first metal portion 2102 is smaller than the area of the second metal portion 2201, that is, S1 ⁇ S2. That is, the definition S1 ⁇ S2 in FIG. 3D shows the third structure.
  • the second metal part 2201 with a larger area is more likely to attract the ESD arc, which can also be understood as the first
  • the dielectric strength of the three-function component 2101 - 2 is greater than that of the second function component 220 .
  • the ESD arc will be attracted by the second functional component 220 with lower dielectric strength, but not easily attracted by the third functional component 2101-2, so that it is not easy to hit the acoustic device 2101-1 through the sound hole 120, thus protecting the acoustic device 2101 -1, improve the ESD protection performance of the acoustic device 2101-1.
  • the distance L1 between the first metal part 2102 and the acoustic hole 120 plus the thickness H of the first substrate 110 is greater than the distance L2 between the second metal part 2201 and the acoustic hole 120, and the first metal part
  • the area S1 of 2102 is smaller than the area S2 of the second metal part 2201 , that is, L1+H>L2 and S1 ⁇ S2, so that the dielectric strength of the third functional component 2101-2 is greater than that of the second functional component 220 .
  • the distance L1 between the first metal part 2102 and the sound hole 120 is greater than the distance L2 between the second metal part 2201 and the sound hole 120 , that is, L1>L2.
  • the third functional component 2101-2 may also include a first insulating part 2103, and the first insulating part 2103 covers the first metal part 2102; the second functional component 220 may also include a second insulating part 2202, the second The insulation part 2202 covers part of the second metal part 2201 .
  • the first metal part 2102 and the second metal part 2201 are located on opposite sides of the first substrate 110 . Specifically, the first metal part 2102 is located on the side of the first substrate 110 facing the acoustic device 2101-1, the second metal part 2201 is located on the side of the first substrate 110 facing away from the acoustic device 2101-1, and the first metal part 2102 and the second The metal parts 2201 are located around the sound holes 120 .
  • the first insulating part 2103 covers the first metal part 2102 , and the second insulating part 2202 covers part of the second metal part 2201 .
  • the first metal part 2102 is completely covered by the first insulating part 2103, and part of the second metal part 2201 is not covered by the second insulating part 2202 but exposed, so that it has the third function of the first metal part 2102
  • the dielectric strength of the component 2101 - 2 is greater than that of the second functional component 220 having the second metal part 2201 .
  • the first insulating part 2103 and the second insulating part 2202 may be ink covering the first substrate 110 , and the first insulating part 2103 and the second insulating part 2202 may protect and insulate the metal parts covered by them.
  • the first metal part 2102 and the second metal part 2201 can be metal copper, or other conductive metals. It should be noted that conductive layers can be provided on the upper and lower sides of the first substrate 110 , the conductive layers can be formed of metal copper, and the first metal part 2102 and the second metal part 2201 can be part of the corresponding conductive layer.
  • first insulating part 2103 may cover the side of the first metal part 2102 facing the sound hole 120
  • second insulating part 2202 exposes the side of the second metal part 2201 facing the sound hole 120 .
  • the side of the first metal part 2102 facing away from the first substrate 110 may be completely covered by the first insulating part 2103, and the side of the second metal part 2201 facing away from the first substrate 110 may be partially exposed to the second insulating part 2202.
  • the side of the first metal part 2102 facing the sound hole 120 and the side of the second metal part 2201 facing the sound hole 120 may be simultaneously shielded by the corresponding insulating part, or exposed to the corresponding insulating part at the same time.
  • the first insulating part 2103 may be disposed on the side of the first metal part 2102 facing the sound hole 120, the second insulating part 2202 exposes the side of the second metal part 2201 facing the sound hole 120, and at the same time
  • the side of the first metal part 2102 facing away from the first substrate 110 may be completely covered by the first insulating part 2103 , and the side of the second metal part 2201 facing away from the first substrate 110 may be partially exposed to the second insulating part 2202 .
  • first metal part 2102 and the second metal part 2201 can be insulated, but in another example, the first metal part 2102 and the second metal part 2201 can also be electrically connected, as shown in FIG. 3F .
  • the first substrate 110 is provided with a via hole 151, and the first metal part 2102 and the second metal part 2201 can be connected through a conductor passing through the via hole 151, so as to realize the communication between the first metal part 2102 and the second metal part 2201.
  • a metal portion 2102 and/or a second metal portion 2201 may be electrically connected to the ground of the first substrate 110.
  • the first metal portion 2102 and the second metal portion 2201 can be used as a ground metal of the acoustic device 2101-1, or as a metal ground for reducing interference. Wherein, when the second metal part 2201 is grounded, the interference near the sound hole can be reduced.
  • the second metal part 2201 can also be completely covered by the second insulating part 2202, and the intermediary of the third functional component 2101-2 It only needs to be greater than the dielectric strength of the second functional component 220 .
  • the first substrate 110 is also provided with a connection via hole 151 for electrically connecting the acoustic device 2101-1 to the first substrate 110. The pads are electrically connected.
  • FIG. 4A adds at least one tip portion 108 on the basis of the aforementioned FIG.
  • One end is attached to the inner edge of the second metal part 2201 , and the other end extends toward the geometric center of the sound hole 120 .
  • the length of the tip portion 108 is greater than or equal to the distance from the inner edge of the second metal portion 2201 to the edge of the acoustic hole 120 .
  • Fig. 4A shows that the length of the tip part 108 is equal to the distance from the inner edge of the second metal part 2201 to the edge of the sound hole 120, that is, the tip of the tip part 108 is attached to the edge of the sound hole 120, so that the anti- ESD works better.
  • each tip portion 108 on the first substrate 110 is an acute triangle, and one sharp corner of each acute triangle points to the geometric center of the acoustic hole 120 . Since the tip portion 108 is an acute triangle, that is, the width of the tip portion 108 gradually increases from the tip to the bottom, so that the resistance gradually decreases, and it is easier to attract nearby static electricity, so that the anti-ESD effect is better.
  • At least one tip portion 108 may include four tip portions made of metal (as shown in FIG. 4B ), and the interval between adjacent tip portions is 90 degrees.
  • the second metal part 2201 is electrically connected to the second metal part 2201 through the via hole 151 passing through the first substrate 110 .
  • the tip portions may also have other shapes, and the number may not be limited to four as shown in FIG. 4B , so the application does not limit the number and shape of the tip portions.
  • the diameter design of the second metal part 2201 (the metal ring shown in Figure 4B) is often designed as large as possible, which leads to the superposition of the dielectric strength of the metal ring and air It will be greater than the dielectric strength of the third functional component 2101-2.
  • the ESD arc reaches the entrance of the sound hole, the ESD arc will preferentially enter the product.
  • the air explodes it will damage the acoustic devices inside the product (such as MEMS devices and ASIC devices). cause irreversible damage.
  • the protruding tip portion 108 by disposing the protruding tip portion 108 inside the second metal portion 2201 , the protruding tip is closer to the sound hole 120 .
  • the ESD arc will be preferentially attracted by the tip portion 108 with low dielectric strength near the outside of the product, and will not be attracted by the third functional component 2101-2 with high dielectric strength , so that the ESD arc will not hit the acoustic device 2101-1 inside the product, thereby greatly reducing the impact of the ESD arc on the sensitive acoustic device 2101-1.
  • the energy After the ESD arc is attracted by the tip portion 108 of the second metal portion 2201 , the energy will be released through the protection circuit grounded with the second metal portion 2201 .
  • the second metal part 2201 shown in FIG. 5A includes a first ground component 22011 and a second ground component 22012 , both of which are arranged around the acoustic hole 120 .
  • the first grounding component 22011 and the second grounding component 22012 are both arranged around the sound hole 120 .
  • the first grounding part 22011 and the second grounding part 22012 form a concentric double-ring structure. It can be seen from the above that, compared with the second grounding part 22012, the first grounding part 22011 is closer to the sound hole 120, so the first grounding part 22011 is closer ESD arcs around the acoustic hole 120 are easily attracted.
  • the ESD arc when the ESD arc outside the microphone structure hits the microphone structure, the ESD arc is preferentially attracted at the end of the sound hole 120 close to the second surface of the first substrate 110 by the first grounding part 22011 closer to the sound hole 120, avoiding ESD The arc enters the microphone structure through the acoustic hole 120, thereby preventing the acoustic device 2101-1 in the microphone structure from being damaged by the ESD arc.
  • the first grounding component 22011 since the first grounding component 22011 is located inside the second grounding component 22012, the first grounding component 22011 can block the solder ball on the second grounding component 22012 to prevent the solder ball from falling into the acoustic hole 120 , thus improving the service life of the microphone. Therefore, the microphone structure described in the present application can reduce the probability of ESD arc entering into the microphone and improve the service life of the microphone.
  • the first ground member 22011 may be a ring structure surrounding the sound hole 120 . It can be understood that, the first grounding member 22011 is not limited to a ring structure, and may also be a square structure surrounding the sound hole 120 , which is not limited in this application.
  • the second ground component 22012 may also be a ring structure surrounding the sound hole 120 .
  • the second grounding member 22012 is not limited to a ring structure, and may also be a square structure surrounding the sound hole 120 , which is not limited in this application.
  • both the first grounding part 22011 and the second grounding part 22012 may be metal rings.
  • the material of the first grounding part 22011 and the second grounding part 22012 may be a material with high electrical conductivity.
  • the metal ring is made of copper.
  • the outer diameter of the first grounding component 22011 is smaller than the inner diameter of the second grounding component 22012 . That is, a gap is provided between the first grounding component 22011 and the second grounding component 22012 , so that the first grounding component 22011 and the second grounding component 22012 are spaced apart.
  • the acoustic hole 120 is located in the annular area defined by the inner diameter of the first grounding member 22011 .
  • the width of the metal ring constituting the first ground component 22011 is smaller than the width of the metal ring constituting the second ground component 22012 .
  • the second ground member 22012 is laterally arranged on the second surface (ie, the lower surface) of the first substrate 110 .
  • the lateral arrangement may be that the second ground member 22012 extends along a direction parallel to the substrate.
  • the second ground component 22012 can be used to be electrically connected to the zero potential or the reference potential.
  • the second insulating part 2202 covers part of the second grounding component 22012 to form an exposed grounding area 19 close to the direction of the acoustic hole 120 .
  • the first metal part 2102 is disposed around the acoustic hole 120 .
  • the sum of the distance b is greater than the distance c between the first grounding part 22011 and the central axis of the sound hole 120 plus the distance d between the first grounding part 22011 and the outer surface of the second functional component 220 in the direction of the central axis of the sound hole 120 (that is, the second
  • the sum of the lower surface of the functional component 220 that is, a+b>c+d; and/or the area of the first metal part 2102 is smaller than the area of the first grounding part 22011 .
  • the ESD arc When an ESD arc hits, the ESD arc will be attracted by the first grounding part 22011 of the second metal part 2201, but not easily attracted by the first metal part 2102, so that it is not easy to hit the acoustic device 2101-1 through the sound hole 120 , the acoustic device 2101-1 is protected, and the ESD protection performance of the acoustic device 2101-1 is improved.
  • the first ground component 22011 and the second ground component 22012 are respectively electrically connected to the first metal part 2102 through via holes penetrating through the first substrate 110 .
  • a conductor is disposed in the via hole. The conductor is electrically connected to the first metal part 2102 and the second ground member 22012 . In this way, the first metal portion 2102 can be electrically connected to the second ground member 22012 through the conductor.
  • the microphone structure of the embodiment of the present application further includes an electrostatic discharge circuit (not shown in the figure).
  • the electrostatic discharge circuit can be electrically coupled with the first grounding component 22011 .
  • the electrostatic discharge circuit is used to discharge the static electricity absorbed by the first grounding part 22011.
  • the first grounding part 22011 closer to the sound hole 120 is more likely to attract the ESD arc around the sound hole 120, and the static electricity generated by the ESD arc attracted by the first grounding part 22011 Conducted to the electrostatic discharge circuit and discharged by the electrostatic discharge circuit.
  • first via hole 151-1 there may be two via holes. As shown in FIG. to the first via hole 151-1 and the second via hole 151-2 on the second surface (ie, the lower surface).
  • the first ground component 22011 is electrically connected to the first metal portion 2102 through the second via hole 151-2
  • the second ground component 22012 is electrically connected to the first metal portion 2102 through the first via hole 151-1.
  • Both the first ground component 22011 and the second ground component 22012 are electrically connected to one end of the via hole 151 .
  • the first metal portion 2101 - 1 is electrically connected to the other end of the via hole 151 .
  • the main difference between FIG. 6A and FIG. 4A lies in the second metal part 2201, and the second metal part 2201 is located on the second surface of the first substrate 110 and is arranged around the acoustic hole 120.
  • the second metal part 2201 shown in FIG. 4A is provided with a tip portion 108 at one end close to the sound hole 120, and the second metal part 2201 shown in FIG. 6A is provided with an electrostatic interception part 109 at an end close to the sound hole 120.
  • the projection of 109 in the direction perpendicular to the first substrate 110 partly covers the projection of the acoustic hole 120 in this direction, and the dielectric strength of the electrostatic intercepting portion 109 is smaller than that of the third functional component 2101-2.
  • the electrostatic intercepting part 109 includes at least one baffle, and at least one baffle partially blocks the sound hole 120, so that external sound waves can enter the interior of the acoustic device 2101-1 through the gap not blocked by the baffle.
  • each baffle may be smaller than the diameter of the acoustic hole 120, so that external sound waves may enter the interior of the acoustic device 2101-1 through the space not blocked by the baffle.
  • the microphone structure of the embodiment of the present application further includes an electrostatic discharge circuit (not shown in the figure).
  • the electrostatic discharge circuit can be electrically coupled with the second metal part 2201 .
  • the static discharge circuit is used to discharge static electricity absorbed by the second metal component 2201 .
  • Fig. 6A shows that the second metal part 2201 can be a metal ring, and the electrostatic interception part 109 includes two metal materials and is a first baffle 1091 and a second baffle 1092 vertically arranged on the same plane (as shown in Fig. 6B shown), but the application does not limit the number and shape of the baffles.
  • the third functional component 2101-2 shown in FIG. 6A includes a first insulating part 2103, and the second functional component 220 includes a second metal part 2201 and a second insulating part 2202.
  • the first insulating part covers the first insulating part of the first substrate 110. surface (ie, the upper surface), the second insulating part covers part of the second surface (ie, the lower surface) of the first substrate 110 .
  • the setting of the third functional component 2101-2 and the second functional component 220 in this application can also refer to the above-mentioned embodiment, and may not be limited to the example shown in FIG. 6A.
  • the third functional component 2101-2 may also include the first A metal part and a first insulating part, the first metal part is disposed on the first surface of the first substrate, and the first insulating part covers part or all of the first metal.
  • the first metal part 2102 also includes an extension part (not shown in the figure), the extension part covers the inner edge of the acoustic hole 120 and is electrically connected to the second metal part 2201, the second metal part
  • the portion 2201 includes an exposed area exposed on the second surface (ie, the lower surface) of the first substrate 110 , and the exposed area is all or part of the second metal component 2201 .
  • the first insulating part 2103 shown in Figure 7A covers part of the first metal part 2102, and the second insulating part 2202 may not cover the second metal part 2201, so it can be seen from Figure 7B that the exposed area is basically the second metal part 2201 all areas.
  • the first metal part 2102 and the second metal part 2201 are electrically connected through the extension part, and the second metal part 2201 is partially exposed or completely exposed, when an ESD arc hits the sound hole from the side of the first substrate 110 away from the acoustic device 120 , the ESD arc will be attracted by the second metal part 2201 which is closer and not shielded by the second insulating part 2202 , and is less likely to be attracted by the first metal part 2102 which is farther away and shielded by the first insulating part 2103 .
  • the ESD arc will be attracted by the second metal part 2201 with lower dielectric strength, and the edge of the sound hole 120 is also connected to the second metal part 2201 through the extension part, so that the ESD arc is not easy to hit through the sound hole 120
  • the acoustic device protects the acoustic device and improves the ESD protection performance of the acoustic device.
  • the difference between Figure 7C and Figure 7A is that the second insulating part 2202 shown in Figure 7C covers part of the second metal part 2201, for example, it can be seen from Figure 7D that the second insulating part 2202 covers About half of the area of the second metal part 2201 is covered.
  • the difference between FIG. 7E and FIG. 7C is that the second insulating part 2202 shown in FIG.
  • the insulating part 2202 surrounds the sound hole 120 and covers the second metal part 2201 at intervals in a ring shape, that is, the exposed area includes a rectangular ring-shaped metal area of the second metal part 2201 and a circular ring-shaped metal area surrounding the sound hole 120 .
  • the present application does not limit the width of the rectangular ring-shaped metal area and the circular metal exposed area, nor does it limit the shape of the exposed area.
  • the third functional component 2101-2 also includes an electrostatic diversion device 300.
  • the electrostatic diversion device 300 is used to absorb the ESD arc entering the acoustic device 2101-1 and pass through the first metal part 2102 and the second metal part. Power 2201 for release.
  • the static dredging device 300 can be arranged on the first surface of the first substrate 110, the acoustic device 2101-1 is electrically connected to the static dredging device 300 through the pad 180 on the first substrate 110, and the static dredging device 300 is also connected to the first metal
  • the first metal part 2102 is electrically connected to the second metal part 2201 through the through hole 151 passing through the first substrate 110 to form a conductive link.
  • the projection of the electrostatic deflecting device 300 on the first surface of the first substrate 110 may partially overlap with the projection of the acoustic device 2101-1 on the first surface of the first substrate 110, for example, the electrostatic deflecting device 300 may be arranged on Close to one end of the ASIC 2105, so that the conductive link between the static dredging device 300 and the ASIC 2105 is relatively short because the electrostatic dredging device 300 is arranged close to the acoustic device 2101-1 to be protected, and the static electricity
  • the guide device 300 can quickly absorb the ESD arc entering the microphone product and release it through the grounding circuit electrically connected to the first metal part 2102 and/or the second metal part 2201, which can prevent static electricity from damaging the acoustic device 2101-1.
  • the electrostatic dredging device 300 may be partially embedded in the first substrate 110 , as shown in FIG. 8B .
  • a groove 301 is provided on the first substrate 110 , and the groove 301 protrudes in a direction away from the acoustic device 2101 - 1 , and the electrostatic dredging device 300 is placed in the groove 301 .
  • the depth of the groove 301 may be greater than or equal to the height of the static dredging device 300 , which facilitates placement of the static dredging device 300 and saves space.
  • the electrostatic dredging device 300 can be placed in the groove 301 inside the first substrate 110, so that the surface of the first substrate 110 after the electrostatic dredging device 300 is installed can still be kept flat, without Assembling of the subsequent acoustic device 2101 - 1 is affected, since the space above the first substrate 110 does not need to be occupied, the space utilization ratio of the first substrate 110 facing the acoustic device can be improved.
  • At least two groups of soldering pads may be provided on the sidewall of the groove 301, wherein one group of soldering pads 302 is used for static electricity dredging
  • the device 300 is connected to the bonding pad 180 , and another group of bonding pads 303 is used to connect the static electricity dredging device 300 to the first metal part 2102 . Therefore, by disposing welding pads on the sidewalls of the groove 301 , the installation and electrical conduction of the static electricity dissipating device 300 are facilitated.
  • the electrostatic dredging device 300 shown in this application is a diode device, the anode of the diode device is electrically connected to the corresponding pad 180 , and the cathode of the diode device is electrically connected to the first metal part 2102 .
  • the diode device may be an ESD diode.
  • ESD diode is an overvoltage and anti-static protection component. It is a device designed for I/O port protection in high-speed data transmission applications. ESD diodes can be used to prevent sensitive circuits in electronic equipment from being affected by ESD (electrostatic discharge).
  • ESD diode The working principle of ESD diode is as follows:
  • the normal signal voltage generally does not reach the conduction voltage of the ESD diode, it will not generate losses through the conduction ground, and the ESD voltage Generally, if the conduction voltage of the ESD diode is exceeded, the ESD diode will be conducted, and the ESD voltage will be released through the ground, so as to protect the subsequent circuit and not damage the internal components of the microphone.
  • the diode device may also be a transient voltage suppressor diode device (Transient Voltage Suppressor, TVS).
  • the anode of the TVS tube is electrically connected to the pad 180
  • the cathode of the TVS tube is electrically connected to the first metal part 2102 .
  • the TVS tube When the two poles of the TVS tube are subjected to an instantaneous high-energy impact, it can suddenly reduce the high impedance between its two poles to a low impedance at a very high speed (up to 1/(10 ⁇ 12) seconds), absorbing up to several thousand watts
  • the surge power large current clamps the voltage between the two poles at a predetermined value, so as to ensure that the subsequent circuit components are not damaged by the impact of transient high energy.
  • the TVS tube has many advantages such as small size, high power, no noise, and low price.
  • the TVS transistor is a bidirectional TVS transistor, so as to prevent the components and parts of the subsequent stage circuit from being damaged by the high alternating current.
  • the present application is provided with an electrostatic dredging device on the first substrate, the electrostatic dredging device is electrically connected to the acoustic component via a conductive link, and the projection of the electrostatic dredging device on the first substrate is the same as the projection of the acoustic device on the first substrate Partially overlapping, so that the electrostatic channeling device is closer to the circuit protecting the acoustic device.
  • the electrostatic arc is preferentially absorbed quickly by the electrostatic dredging device, and the arc will not hit the acoustic devices (such as MEMS devices and ASIC devices) inside the microphone product, thereby reducing the exposure of sensitive MEMS devices and ASIC devices to ESD arc Impact.
  • acoustic devices such as MEMS devices and ASIC devices
  • the basic component 100 described in this application also includes a second substrate 111, which is located on the side of the first substrate 110 away from the acoustic device 2101-1, and the second functional component 220 also includes a sound guide tube 2203 and a complete machine casing 2204,
  • the sound guide tube 2203 is located on the second surface of the first base plate 110 and runs through the second base plate 111 and the complete machine shell 2204 .
  • the sound guide tube 2203 forms a passage 104, the passage 104 has a first opening 104-1 and a second opening 104-2, the first opening 104-1 communicates with the sound hole 120, and the second opening 104-2 communicates with the external space
  • the central axis of the first opening 104-1 and the central axis of the second opening 104-2 may be the same central axis (as shown in FIG. 9A ), or may be staggered from each other (as shown in FIG. 9B ).
  • the first substrate 110 may be a PCB board
  • the second substrate 111 may be a PCBA board.
  • the PCB board may be directly welded to the PCBA board of the electronic device through the pad.
  • the acoustic device 2101 - 1 located on the first surface of the first substrate 110 can be packaged by a shielding case (ie, a packaging shell) 230 .
  • the first substrate 110 can be connected to the second substrate 111 through the connection structure 103 .
  • the shape of the sound hole 120 and the sound guide tube 2203 may be polygonal, such as a triangle, a quadrangle, a pentagon, etc., so the application does not limit the shape of the sound hole 120 and the sound guide tube 2203 .
  • a metal block 102 is provided on the inner wall of the sound guide tube 2203 away from the acoustic device (i.e., the front end of the sound guide tube), and the metal block 102 is exposed toward the central axis of the sound hole 120, and the exposed part The metal block 102 can attract the ESD arc entering from the front end of the sound guide tube 2203 .
  • the thickness of the metal block 102 is smaller than the wall thickness of the body of the sound guide tube 2203 , and the length of the metal block 102 along the axis of the tube body is smaller than the length of the body of the sound guide tube 2203 .
  • the metal block 102 Since the metal block 102 is arranged at the front end of the sound guide tube 2203, when an ESD arc enters the sound guide tube 2203 from the side away from the acoustic device 2101-1, the metal block 102 will attract and release the ESD arc, and the sound guide tube 2203 increases the distance from the static electricity to the acoustic device 2101-1 inside the microphone, weakens the influence of instantaneous air pressure changes on the acoustic device 2101-1, thereby reducing the probability of ESD arcs entering the interior of the acoustic device 2101-1, thereby improving the performance of the microphone. Anti-ESD performance.
  • the metal block 102 can be arranged in a ring shape around the sound guide tube 2203, or a plurality of metal blocks 102 can be arranged at intervals around the inner wall of the sound guide tube 2203, so this application does not make any specific comments on the shape and quantity of the metal blocks. limited.
  • the present application prolongs the distance from the ESD arc to the acoustic device 2101-1 inside the microphone by setting the sound guide tube 2203 and installing the metal block 102 in the tube body of the sound guide tube 2203, and the metal block 102 will attract the ESD arc Released at the front end of the sound guide tube 2203, thereby reducing the probability of the ESD arc entering the inside of the sound guide tube 2203, thereby improving the anti-ESD performance of the microphone.
  • This application also provides another sound guide tube structure, as shown in Figure 9B, the sound guide tube 2203 forms a bent passage 104 between the second substrate 111 and the complete machine casing 2204, and the length of the bent passage 104 is Greater than the distance between the second base plate 111 and the complete machine casing 2204, the sound wave from the external space enters the bent passage 104 from the second opening 104-2, and enters the sound hole 120 through the passage 104 and the first opening 104-1 , thus, external sound waves can be transmitted to the acoustic device 2101-1 through the sound guide tube 2203 and the sound hole 120. In turn, the acoustic device 2101-1 can receive the sound wave.
  • the central axis of the first opening 104-1 and the central axis of the second opening 104-2 are staggered from each other. Since the second opening 104-2 is not facing the acoustic device 2101-1, the The distance between the incoming ESD arc and the acoustic device 2101-1 is relatively long, which prevents the acoustic device 2101-1 from being difficult to withstand the transient high voltage of the ESD arc, thereby damaging part of the structure.
  • the sound guide tube 2203 includes a first bending part 2203-1 and a second bending part 2203-2, for example, the bending angles of the first bending part 2203-1 and the second bending part 2203-2 can be uniform. It's 90 degrees. In this way, the sound guide tube 2203 is bent through the first bending part 2203-1 and the second bending part 2203-2, thereby forming a folded structure, that is, the sound guide tube 2203 passes through the first bending part 2203-1 and the second bending part 2203-1.
  • the folded portion 2203-2 forms a three-stage folded structure.
  • the path length of the sound guide tube 2203 is the sum of the path lengths of the three folded structures.
  • the path length of the sound guide tube 2203 is greater than the distance between the complete machine casing 2204 and the base component 100 .
  • the path length of the sound guiding tube 2203 with the folded structure is longer than that of the linear structure.
  • the bent passage 104 shown in FIG. 9B has a longer path length, which can make the path length of the sound wave to the external space to the sound hole 120 become shorter. long.
  • the distance between the ESD arc and the acoustic device 2101-1 increases, so the ESD arc will be released from the outside of the sound guide tube 2203 first, and will not enter the interior of the sound hole 120,
  • the acoustic device 2101-1 can withstand the transient high voltage of the ESD arc, so as to achieve the purpose of improving the anti-ESD performance of the product.
  • FIG. 9A and FIG. 9B do not show the structures of the first metal part, the first insulating part, the second metal part and the second insulating part, but based on FIG. 9A and FIG. 9B , the present application also
  • the structure may include one or more combinations of components of the first metal part, the first insulating part, the second metal part and the second insulating part. For details, refer to the above-mentioned embodiments, which will not be repeated here.
  • the present application also provides a packaging structure
  • the packaging structure includes the microphone structure in any one of the above-mentioned embodiments.
  • the packaging structure may also include a shielding case 230 , which may be a metal shell for packaging devices.
  • the shielding case 230 can be disposed on the acoustic device 2101-1 (such as the MEMS 2104 and the ASIC 2105).
  • the shielding cover 230 is also arranged on the side of the first substrate 110 facing the MEMS 2104 and the ASIC 2105, the shielding cover 230 can completely cover the MEMS 2104 and the ASIC 2105, thereby protecting the MEMS 2104 and the ASIC 2105.
  • the other side of the acoustic device 2101-1 is the first substrate 110, which can also protect the acoustic device 2101-1, and the static electricity near the sound hole 120 on the first substrate 110 will be attracted by the second metal part 2201, so that all directions Protect the acoustic device 2101-1 from being affected by static electricity.
  • the packaging structure can also protect static electricity from the side away from the first substrate 110 of the acoustic device 2101 - 1 in other ways, such as setting a static electricity guiding circuit.
  • the shielding case 230 can also serve as a packaging shell for the MEMS 2104 and the ASIC 2105.
  • the sound hole is located on the first substrate, but in practical applications, the sound hole can also be set on the shield, that is, the sound hole can be arranged at any position of the shield.
  • the packaging structure includes a shielding case 230 , and the description of the shielding case 230 may refer to the above-mentioned embodiments, and details are not repeated here.
  • any position of the shielding cover 230 is provided with a sound hole 120 passing through the shielding cover 230 in the thickness direction, and the shielding cover 230 is provided with at least one tip portion 108 around the sound hole 120, and the tip portion 108 faces the sound hole 120.
  • the description of the tip portion 108 can refer to the above-mentioned FIGS. 4A-4B , and will not be repeated here.
  • the packaging structure includes a shielding case 230 , and the description of the shielding case 230 can refer to the above-mentioned embodiments, and details are not repeated here.
  • any position of the shielding case 230 is provided with an acoustic hole 120 passing through the shielding case 230 in the thickness direction, and the shielding case 230 is provided with a first grounding component 22011 and a second grounding component 22012 at a position surrounding the acoustic hole 120
  • the structures of the first grounding component 22011 and the second grounding component 22012 are as shown in FIG. 5A above, and will not be repeated here.
  • a concentric double ring structure is formed by the first ground component 22011 and the second ground component 22012 . Therefore, compared with the second grounding part 22012 , the first grounding part 22011 is closer to the sound hole 120 , so the first grounding part 22011 is more likely to attract the ESD arc around the sound hole 120 . Further, the first ground component 22011 may be a ring structure surrounding the sound hole 120 .
  • the packaging structure includes a shielding case 230 , and the description of the shielding case 230 may refer to the above-mentioned embodiments, and details are not repeated here.
  • any position of the shielding cover 230 is provided with an acoustic hole 120 penetrating the shielding cover 230 in the thickness direction, and the shielding cover 230 is provided with an electrostatic interception part 109 at a position surrounding the acoustic hole 120, and the intermediary of the electrostatic interception part 109
  • the electric strength is lower than the dielectric strength of the inner space of the packaging structure, wherein the projection of the electrostatic intercepting portion 109 in a direction perpendicular to the first substrate 110 partially covers the projection of the acoustic hole 120 in this direction.
  • an embodiment of the present application further provides an electronic device, which may include the microphone structure in any one of the foregoing embodiments, and the structures of similar components are as described above, and will not be repeated here.
  • the electronic device can be a device with an audio playback function, such as a mobile phone, a speaker, a tablet computer, a TV, a notebook computer, a point reader, etc. device, the embodiment of this application does not limit the type of electronic device.

Abstract

本申请公开了一种麦克风结构、封装结构及电子设备，所述麦克风结构包括基础部件和功能组件，基础部件设有声孔，功能组件包括第一功能组件和第二功能组件，第一功能组件包括声学器件和第三功能组件，第二功能组件包括第二金属部和第二绝缘部。本申请能够提高产品抗静电放电性能并降低静电放电对器件的损害。

Description

麦克风结构、封装结构及电子设备
相关申请
本申请要求中国专利申请的优先权，在此将其全文引入作为参考，具体如下：
申请号为202122557968.2，申请日为2021年10月22日，发明名称为封装结构、线路板及电子设备；
申请号为202122557541.2，申请日为2021年10月22日，发明名称为封装结构、线路板及电子设备；
申请号为202122557970.X，申请日为2021年10月22日，发明名称为麦克风结构及电子设备；
申请号为202122559478.6，申请日为2021年10月22日，发明名称为麦克风结构、封装结构及电子设备；
申请号为202122558079.8，申请日为2021年10月22日，发明名称为麦克风组件、麦克风封装结构及具有其的电子设备；
申请号为202122559204.7，申请日为2021年10月22日，发明名称为一种麦克风结构及电子设备；
申请号为202122557690.9，申请日为2021年10月22日，发明名称为一种麦克风结构、封装结构及电子设备；
申请号为202122558222.3，申请日为2021年10月22日，发明名称为一种麦克风结构及电子设备；
申请号为202122558224.2，申请日为2021年10月22日，发明名称为一种麦克风结构、封装结构及电子设备。
技术领域
本申请涉及微机电系统技术领域，尤其涉及一种麦克风结构、封装结构及电子设备。
背景技术
在半导体元器件以及微机电系统(Micro-Electro-Mechanical System，简称MEMS)的生产和使用过程中，静电放电会对器件造成不可逆的损害，因此有必要在基于PCB(Printed Circuit Board，印刷电路板)的微机电结构(例如麦克风结构)中提供抗静电放电结构，以提高产品抗静电放电(Electrostatic Discharge，ESD)性能并降低静电放电对器件的损害。
发明内容
本申请的目的在于，提供一种麦克风结构、封装结构及电子设备，以解决因静电放电对器件造成不可逆的损害问题。
为实现上述目的，本申请提供了一种麦克风结构，包括：
基础部件，其包括至少一个基板，所述至少一个基板包括第一基板，所述第一基板具有第一表面和与该第一表面相对的第二表面，所述第一基板设有在厚度方向上贯通所述第一基板的声孔；
功能组件，其包括第一功能组件和第二功能组件，所述第一功能组件包括声学器件和第三功能组件，所述声学器件用于接收来自所述声孔的声波，所述第一功能组件位于所述第一基板的第一表面，所述第二功能组件位于所述第一基板的第二表面；
其中，所述第三功能组件包括第一金属部和第一绝缘部，所述第一金属部设置在所述第一基板的第一表面，所述第一绝缘部覆盖部分或全部所述第一金属部；所述第二功能组件包括第二金属部和第二绝缘部，所述第二金属部设置在所述第一基板的第二表面，所述第二绝缘部覆盖部分所述第二金属部以使得所述第二金属部朝向所述声孔的一端露出，所述第一金属部用于与所述第一基板的地电连接，所述第二金属部用于与所述第一基板的地或释放静电的电路电连接，所述第一金属部和所述第二金属部均围绕所述声孔设置。
可选地，其中所述第一金属部还包括延伸部，所述延伸部覆盖在所述声孔的内边缘并与所述第二金属部电连接，所述第二金属部包括裸露在所述第一基板的第二表面的露出区域，所述露出区域是所述第二金属部件的全部区域或部分区域。
可选地，其中所述第一金属部与所述声孔的距离加上所述第一基板的厚度大于所述第二金属部与所述声孔的距离，和/或所述第一金属部的面积小于所述第二金属部的面积，和/或所述第一金属部与所述声孔的距离大于所述第二金属部与所述声孔的距离。
可选地，其中所述第二金属部包括第一接地部件和第二接地部件，所述第一接地部件和所述第二接地部件均围绕所述声孔设置。
其中所述第一接地部件和所述第二接地部件均是金属环，并且所述第一接地部件的外直径小于所述第二接地部件的内直径，所述声孔位于所述第一接地部件的内直径限定的环形区域。
可选地，其中构成所述第一接地部件的金属环的宽度小于构成所述第二接地部件的金属环的宽度。
可选地，其中所述第一接地部件和所述第二接地部件通过贯穿所述第一基板的通孔与所述第一金属部电连接。
可选地，所述第一金属部与所述声孔的中心轴线距离加上在所述声孔的中心轴线方向上所述第一金属部至所述第二功能组件外表面的距离之和大于所述第一接地部件与所述声孔的中心轴线距离加上在所述声孔的中心轴线方向上所述第一接地部件至所述第二功能组件外表面的距离之和，和/或所述第一金属部的面积小于所述第一接地部件的面积。
可选地，其中所述基础部件还包括第二基板，所述第二基板位于所述第一基板远离所述声学器件的一侧，所述第二功能组件还包括导音管和整机外壳，所述导音管位于所述第一基板的第二表面并贯穿所述第二基板和所述整机外壳，所述第一基板、第二基板以及所述整机外壳均围绕所述声孔设置。
可选地，其中在导音管远离所述声学器件的一端管体内壁设有金属块，所述金属块朝所述声孔的中心轴线方向露出。
可选地，其中所述金属块的厚度小于所述导音管管体的壁厚，所述金属块沿管体轴线方向的长度小于所述导音管管体的长度。
可选地，其中所述导音管在所述第二基板和所述整机外壳之间形成一弯折通路，所述弯折通路的路径长度大于所述第二基板到所述整机外壳之间的距离，声波通过所述弯折通路进入所述声孔。
可选地，其中所述导音管包括第一开口和第二开口，所述第一开口与所述声孔相连通，所述第二开口与外部空间相连通，并且所述第一开口的中轴线与所述第二开口的中轴线相互错开。
可选地，其中在所述第二金属部设置有至少一个尖端部，所述尖端部一端与所述第二金属部的内边缘贴合，另一端向所述声孔的几何中心处延伸。
可选地，其中所述尖端部的长度大于或等于所述第二金属部的内边缘到所述声孔的边缘的距离。
可选地，其中每个所述尖端部在所述第一基板的第二表面上的投影呈锐角三角形，并且每个锐角三角形的一个尖角指向所述声孔的几何中心。
可选地，所述第二金属部在靠近所述声孔的一端设置有静电拦截部，所述静电拦截部在垂直于所述第一基板的方向上的投影覆盖部分所述声孔在该方向上的投影。
可选地，其中所述静电拦截部包括至少一个挡板，并且所述至少一个挡板遮挡部分所述声孔。
可选地，其中所述第三功能组件还包括静电疏导器件，所述静电疏导器件用于将进入所述声学器件的ESD电弧进行吸收并经所述第一金属部和所述第二金属部电进行释放。
可选地，其中在所述第一基板的第一表面上设置有一凹槽，所述凹槽朝远离所述声学器件的方向突出并用于放置所述静电疏导器件。
可选地，其中在所述第一基板的厚度方向上，所述凹槽的深度大于或等于所述静电疏导器件的高度。
可选地，其中所述静电疏导器件是二极管器件，所述二极管器件的阳极与所述声学器件电连接，所述二极管器件的阴极与所述第一金属部连接。
本申请还提供一种封装结构，其包括如上任一项所述的麦克风结构。
本申请还提供一种电子设备，其包括如上任一项所述的麦克风结构。
在本申请实施例中，所述麦克风结构将声孔设置在基础部件上，将声学器件设置在第一功能组件上，当有ESD电弧从基础部件打到声孔时，由于第一功能组件的介电强度大于第二功能组件的介电强度，ESD电弧会被介电强度更低的第二功能组件吸引，从而不容易经过声孔打到声学器件，保护了声学器 件，提高了声学器件的ESD防护性能。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请提供的麦克风结构的结构示意图之一；
图2A为本申请提供的麦克风结构的结构示意图之二；
图2B为本申请提供的麦克风结构的结构示意图之三；
图2C为本申请提供的麦克风结构的结构示意图之四；
图2D为本申请提供的麦克风结构的结构示意图之五；
图3A为本申请第一实施例提供的麦克风结构的第一种结构示意图；
图3B为图3A的仰视图；
图3C为本申请第一实施例提供的麦克风结构的第二种结构示意图；
图3D为本申请第一实施例提供的麦克风结构的第三种结构示意图；
图3E为本申请第一实施例提供的麦克风结构的第四种结构示意图；
图3F为本申请第一实施例提供的麦克风结构的第五种结构示意图；
图4A为本申请第二实施例提供的麦克风结构的结构示意图；
图4B为图4A的仰视图；
图5A为本申请第三实施例提供的麦克风结构的第一种结构示意图；
图5B为图5A的仰视图；
图5C为本申请第三实施例提供的麦克风结构的第二种结构示意图；
图6A为本申请第四实施例提供的麦克风结构的结构示意图；
图6B为图6A的仰视图；
图7A为本申请第五实施例提供的麦克风结构的第一种结构示意图；
图7B为图7A的仰视图；
图7C为本申请第五实施例提供的麦克风结构的第二种结构示意图；
图7D为图7C的仰视图；
图7E为本申请第五实施例提供的麦克风结构的第三种结构示意图；
图7F为图7E的仰视图；
图8A为本申请第六实施例提供的麦克风结构的第一种结构示意图；
图8B为本申请第六实施例提供的麦克风结构的第二种结构示意图；
图9A为本申请第七实施例提供的麦克风结构的第一种构示意图；
图9B为本申请第七实施例提供的麦克风结构的第二种构示意图；
图10为本申请第一实施例提供的封装结构的示意图；
图11为本申请第二实施例提供的封装结构的示意图；
图12为本申请第三实施例提供的封装结构的示意图；
图13为本申请第四实施例提供的封装结构的示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
如图1所示，本申请实施例提供了一种麦克风结构10，其包括基础部件100和功能组件200。
示例性地，基础部件100包括至少一个基板，所述至少一个基板包括第一基板110，第一基板110具有第一表面1101和与第一表面1101相对的第二表面1102，第一基板110设有在厚度方向上贯通第一基板110的声孔120。第一基板110可以是玻璃基板或者由树脂材料制成。
示例性地，功能组件200包括第一功能组件210和第二功能组件220，第一功能组件210包括声学器件2101-1和第三功能组件2101-2，声学器件2101-1用于接收来自声孔120的声波，第一功能组件210位于第一基板110的第一表面1101，第二功能组件位于第一基板110的第二表面1102。
其中，第三功能组件2101-2包括第一金属部2102和第一绝缘部2103，第一金属部2102设置在第一基板110的第一表面1101，第一绝缘部2103覆盖部分或全部第一金属部2102。第二功能组件220包括第二金属部2201和第二绝缘部2202，第二金属部2201设置在第一基板110的第二表面1102，第二绝缘部2202覆盖部分第二金属部2201以使得第二金属部2201朝向声孔120的 一端露出，第一金属部2102用于与第一基板110的地电连接，第二金属部2201用于与第一基板110的地或释放静电的电路电连接，第一金属部2102和第二金属部2201均围绕声孔120设置。
上述中，由于第二功能组件220的设置，可以使得第二功能组件220的介电强度小于第三功能组件2101-2的介电强度。
介电强度是一种材料作为绝缘体时的电强度的量度，它定义为试样被击穿时，单位厚度承受的最大电压，表示为伏特每单位厚度。物质的介电强度越大，它作为绝缘体的质量越好。介电强度的值可以通过仪器测量获得。
示例性地，声孔120的形状可以是圆形，也可以是多边形，例如是三角形、四边形、五边形等。
本申请实施例提供的麦克风结构10，当有ESD电弧从第一基板110背离声学器件2101-1的一侧打来时，ESD电弧会被介电强度更低的第二功能组件220吸引，而不容易被第三功能组件2101-2吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。
如图2A、图2B所示，第三功能组件2101-2还包括第一金属部2102和第一绝缘部2103，第一金属部2102设置在第一基板110的第一表面1101，第一绝缘部2103覆盖部分或全部第一金属部2102，图2A示出的第一绝缘部2103覆盖部分第一金属部2102，图2B示出的第一绝缘部2103覆盖全部第一金属部2102。
其中，第二功能组件220包括第二金属部2201和第二绝缘部2202，第二金属部2201设置在第一基板110的第二表面1102，第二绝缘部2202覆盖部分第二金属部2201以使得第二金属部2201朝向声孔120的一端露出，第一金属部2102用于与第一基板110的地电连接，第二金属部2201用于与第一基板110的地或释放静电的电路(图中未示出)电连接，第一金属部2102和所述第二金属部2201均围绕声孔120设置。
示例性地，第一金属部2102在第一基板110的正投影可以位于声学器件2101-1在第一基板110的正投影内。第一金属部2102位于声学器件2101-1的下方，第一金属部2102可以与第一基板110的地电连接，从而第一金属部2102 可以作为声学器件2101-1的接地金属部，或者作为降低干扰的金属地。
示例性地，第二金属部2201在第一基板110的正投影可以位于声学器件2101-1在第一基板110的正投影内。第二金属部2201也对应位于声学器件2101-1的下方，第二金属部2201和第一金属部2102相对设置。第二金属部2201可以用于与第一基板110的地电连接，从而使第二金属部2201可以作为降低干扰的金属地。第二金属部2201还可以与释放静电的电路电连接，第二金属部2201可以将ESD电弧导到释放静电的电路进行释放。释放静电的电路可以设置在第一基板110上。若第一基板110安装到其他结构上时，可以将第二金属部2201与其他结构的释放静电的电路电连接。
当第一金属部2102和第二金属部2201均与地电连接时，第一金属部2102和第二金属部2201可以通过其所在导电层的其他线路与地电连接，第一金属部2102和第二金属部2201也可以通过第一基板110的过孔(或称为通孔)内的线路直接电连接。本发明实施例不对第一金属部2102和第二金属部2201与地电连接的线路进行限定。
第三功能组件2101-2和第二功能组件220可以为围绕声孔120相同范围内的区域，并位于声学器件2101-1下方的区域。若第三功能组件2101-2和第二功能组件220的介电强度基本一致，当ESD电弧打到声孔120时，由于第三功能组件2101-2和第二功能组件220的介电强度一致，ESD电弧会随机打到第二功能组件220或第三功能组件2101-2。因此，本发明实施例通过改变相关技术中第二功能组件220或第三功能组件2101-2的结构，例如增大相关技术中第三功能组件2101-2的介电强度，从而使本发明实施例中的第三功能组件2101-2的介电强度大于第二功能组件220的介电强度，解决了相关技术中，ESD电弧经过声孔打到声学器件2101-1，对声学器件2101-1造成伤害的问题。
如图2C所示，图2C与图2A的主要区别在于第三功能组件2101-2，图2A的第三功能组件2101-2包括第一金属部2102和第一绝缘部2103，图2B的第三功能组件2101-2可以不包括第一金属部2102，即第三功能组件2101-2仅包括第一绝缘部2103，且第一绝缘部2103与第一基板110直接邻接。第二功能组件220可以包括第二金属部2201和第二绝缘部2202，第二金属部2201设置在第二绝缘部2202和第一基板110之间。
第一基板110朝向声学器件2101-1一侧的可以不设置第一金属部2102，而是在第一基板110上直接设置第一绝缘部2103，第一基板110背离声学器件2101-1的另一侧则依次设置第二金属部2201和第二绝缘部2202。因为，第三功能组件2101-2没有第一金属部2102，只有第一绝缘部2103，第二功能组件220包括第二金属部2201和第二绝缘部2202，所以没有第一金属部2102的第三功能组件2101-2的介电强度明显大于具有第二金属部2201的第二功能组件220。当有ESD电弧打到声孔120时，ESD电弧会被具有第二金属部2201的第二功能组件220吸引，而不容易被没有第一金属部的第三功能组件2101-2吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。
其中，第二金属部2201可以部分露出于第二绝缘部2202，从而更好的吸引ESD电弧。第二金属部2201还可以具有其他功能，例如第二金属部2201具有接地功能，可以降低声孔120附近的干扰。又例如，第二金属部2201作为焊盘，第二金属部2201可以与其他功能器件电连接。当然，第二金属部2201也可以完全被第二绝缘部2202覆盖。
因此，第二金属部2201可以接地，可以降低声孔120附近的干扰。第二金属部2201还可以起到其他功能，例如第二金属部2201作为焊盘，用于与其他功能器件电连接。第二金属部2201还可以连接释放静电的电路，从而释放静电。
如图2D所示，图2D与图2C的主要区别在于第二金属部2201。图2C示出的第二金属部2201可以包括裸露子部22015，裸露子部22015在第一基板110的正投影位于声学器件2101-1在第一基板110的正投影内，裸露子部22015背离第一基板110一侧露出于第二绝缘部2202，从而可以更好的吸引ESD电弧。其中，裸露子部22015可以位于第二金属部2201的中间位置。在其他一些实施例中，裸露子部22015也可以位于第二金属部2201朝向声孔120的边缘位置。
示例性地，第一金属部2102和第二金属部2201的材料可以是高电导率的材料，例如铜。
示例性地，第一绝缘部2103和第二绝缘部2202可以是油墨保护层。
示例性地，声学器件2101-1可以是微机电系统2104(Micro-Electro-Mechanical System，MEMS)、专用集成电路2105(Application Specific Integrated Circuit，ASIC)，当然声学器件2101-1也可以为其他结构的麦克风或喇叭等器件。微机电系统(MEMS)2104通过导线与专用集成电路2105电连接，专用集成电路(ASIC)2105通过导线与第一基板110上的焊盘180电连接，焊盘180可以位于在第一基板110朝向声学器件2101-1一侧，并且焊盘180还可以位于第一基板110背离声学器件2101-1的另一侧，第一基板110两侧的焊盘180可以通过第一基板110的过孔内的导电件或连接件电连接，方便声学器件2101-1与其他电路的电连接。
本申请实施例提供的麦克风结构10，当有ESD电弧从第一基板110背离声学器件2101-1的一侧打来时，ESD电弧会被介电强度更低的第二金属部2201吸引，而不容易被第一金属部2102吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。
以下以上述图1、图2A～2D示出的任一种结构为基础通过具体实施对本申请所述麦克风结构进行描述。
实施例一：
如图3A、图3B所示，麦克风结构10包括基础部件100和功能组件200。基础部件100包括第一基板110，第一基板110设有声孔120，功能组件200包括位于第一基板110两侧的第一功能组件210和第二功能组件220。其中，第一功能组件210包括声学器件2101-1、第三功能组件2101-2、第一金属部2102以及第一绝缘部2103。第二功能组件220包括第二金属部2201和第二绝缘部2202。
第三功能组件2101-2设置于第一基板110朝向声学器件2101-1一侧，第二功能组件220设置于第一基板110背离声学器件2101-1一侧，第三功能组件2101-2和第二功能组件220均围绕声孔120设置。声学器件2101-1安装于第三功能组件2101-2上，声学器件2101-1相对声孔120设置。
由此可见，图3A和图3B是基于图2A的基础上，对第一金属部2102和第二金属部2201的距离进行限制，图3A示出的第一种结构是第一金属部2102 与声孔120的距离L1加上第一基板110的厚度H大于第二金属部2201与声孔120的距离L2，即L1+H>L2。
相关技术中，具有声学器件如麦克风及其他半导体器件的麦克风结构，为了提升其屏蔽性和降低干扰，地(GND)布线往往尽可能覆盖整个第一基板。第一基板两侧均设置有GND布线，这样使得第一基板朝向麦克风及其他半导体器件产品一侧(GND铺地)和第一基板背离麦克风一侧都有裸漏的金属，第一基板两侧介电强度基本一致。当ESD电弧来时，由于第一基板两侧的介电强度一致，电弧会随机打第一基板两侧部。若ESD电弧打到第一基板朝向麦克风一侧瞬间的爆炸会对脆弱的麦克风及其他半导体器件造成巨大的伤害。
本发明实施例中的第一功能组件210的声学器件2101-1设置在第一基板110一侧，第二功能组件220设置在第一基板110远离声学器件2101-1一侧，由于第一金属部2102与声孔120的距离L1加上第一基板110的厚度H大于第二金属部2201与声孔120的距离L2，即L1+H>L2。当有ESD电弧从第一基板110背离声学器件2101-1一侧打到声孔120时，ESD电弧会被距离更近的第二金属部2201吸引，也可以理解为，相对ESD电弧而言，第三功能组件2101-2的介电强度大于第二功能组件220的介电强度，ESD电弧会被介电强度更低的第二功能组件220吸引，而不容易被第三功能组件2101-2吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。解决了相关技术中，ESD电弧经过声孔打到声学器件2101-1，对声学器件2101-1造成伤害的问题。
其中，第一金属部2102与声孔120的距离可以等于或略小于第二金属部2201与声孔120的距离，例如第一金属部2102与声孔120的距离加上第一基板110的厚度大于第二金属部2201与声孔120的距离。
在一些可选的实施例中，如图3C所示，考虑到第一基板110的厚度很小，或者为了使第二金属部2201更好的吸引ESD电弧，使ESD电弧不会通过声孔120打到第一金属部2102，图3C示出的第一金属部2102与声孔120的距离可以大于第二金属部2201与声孔120的距离，即L1>L2。也就是说，图3C中限定L1>L2示出了第二种结构。
在一些可选的实施例中，如图3D所示，第一金属部2102的面积小于第 二金属部2201的面积，即S1<S2。也就是说，图3D中限定S1<S2示出了第三种结构。当有ESD电弧从第一基板110背离声学器件2101-1一侧打到声孔120时，相对ESD电弧而言，面积更大的第二金属部2201更容易吸引ESD电弧，也可以理解为第三功能组件2101-2的介电强度大于第二功能组件220的介电强度。ESD电弧会被介电强度更低的第二功能组件220吸引，而不容易被第三功能组件2101-2吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。解决了相关技术中，ESD电弧经过声孔120打到声学器件2101-1，对声学器件2101-1造成伤害的问题。
可以理解是，在一些实施例中，第一金属部2102与声孔120的距离L1加上第一基板110的厚度H大于第二金属部2201与声孔120的距离L2，并且第一金属部2102的面积S1小于第二金属部2201的面积S2，即L1+H>L2且S1<S2，从而使第三功能组件2101-2的介电强度大于第二功能组件220的介电强度。在另外一些实施例中，第一金属部2102与声孔120的距离L1大于第二金属部2201与声孔120的距离L2，即L1>L2。
当有ESD电弧从第一基板110背离声学器件2101-1一侧打来时，ESD电弧会被介电强度更低的第二功能组件220吸引，而不容易被第三功能组件2101-2吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。解决了相关技术中，ESD电弧经过声孔120打到声学器件2101-1，对声学器件2101-1造成伤害的问题。
如图3E所示，第三功能组件2101-2还可以包括第一绝缘部2103，第一绝缘部2103覆盖第一金属部2102；第二功能组件220还可以包括第二绝缘部2202，第二绝缘部2202覆盖部分第二金属部2201。
第一金属部2102和第二金属部2201位于第一基板110相对的两侧。具体的，第一金属部2102位于第一基板110朝向声学器件2101-1一侧，第二金属部2201位于第一基板110背离声学器件2101-1一侧，而且第一金属部2102和第二金属部2201均位于声孔120周围。第一绝缘部2103覆盖第一金属部2102，第二绝缘部2202覆盖部分第二金属部2201。也可以理解为，第一金属部2102全部被第一绝缘部2103覆盖，第二金属部2201部分没有被第二绝缘 部2202覆盖而是裸露出来，从而使具有第一金属部2102的第三功能组件2101-2的介电强度大于具有第二金属部2201的第二功能组件220的介电强度。当有ESD电弧打到声孔120时，ESD电弧会被部分裸露于第二绝缘部2202的第二金属部2201吸引，而不容易被第一绝缘部2103完全覆盖的第一金属部2102吸引，从而不容易经过声孔120打到声学器件，保护了声学器件，提高了声学器件的ESD防护性能。
第一绝缘部2103和第二绝缘部2202可以是覆盖在第一基板110上的油墨，第一绝缘部2103和第二绝缘部2202可以保护其覆盖的金属部并且将其绝缘。第一金属部2102和第二金属部2201可以为金属铜，或其他导电金属。需要说明的是，第一基板110上下两侧均可以设置导电层，导电层可以由金属铜形成，第一金属部2102和第二金属部2201可以为对应的导电层的一部分。
其中，第一绝缘部2103可以覆盖第一金属部2102朝向声孔120一侧，第二绝缘部2202露出第二金属部2201朝向声孔120一侧。
在其他一些实施例中，第一金属部2102背离第一基板110一侧可以完全被第一绝缘部2103覆盖，第二金属部2201背离第一基板110一侧可以部分露出于第二绝缘部2202，第一金属部2102朝向声孔120一侧和第二金属部2201朝向声孔120一侧可以同时被对应的绝缘部遮挡，也可以同时露出于对应的绝缘部。
可选地，在其他一些实施例中，第一绝缘部2103可以设置在第一金属部2102朝向声孔120一侧，第二绝缘部2202露出第二金属部2201朝向声孔120一侧，同时第一金属部2102背离第一基板110一侧可以完全被第一绝缘部2103覆盖，第二金属部2201背离第一基板110一侧可以部分露出于第二绝缘部2202。
可以理解的是，第一金属部2102和第二金属部2201可以绝缘，但是在另一示例中，第一金属部2102和第二金属部2201也可以电连接，如图3F所示。第一基板110设置有过孔151，第一金属部2102和第二金属部2201可通过穿设于过孔151的导体连通，以实现第一金属部2102和第二金属部2201的连通，第一金属部2102和/或第二金属部2201可以与第一基板110的地电连接，在该示例中，由于第一金属部2102和第二金属部2201连通，第一金属部2102和第二金属部2201均可以作为声学器件2101-1的接地金属，或者作为降低干 扰的金属地。其中，当第二金属部2201接地时，可以减低声孔附近的干扰，在一些实施例中，第二金属部2201也可以完全被第二绝缘部2202覆盖，第三功能组件2101-2的介电强度大于第二功能组件220的介电强度即可。第一基板110还设置有用于使声学器件2101-1与第一基板110电连接的连接过孔151，声电器件2101-1可通过穿设于连接过孔151的导线与第一基板110的焊盘电连接。
实施例二：
如图4A、4B所示，图4A在前述图3C的基础上增加了至少一个尖端部108，即所述第二金属部2201还设置有围绕声孔120的至少一个尖端部108，尖端部108一端与第二金属部2201的内边缘贴合，另一端向声孔120的几何中心处延伸。
示例性地，尖端部108的长度大于或等于第二金属部2201的内边缘到声孔120的边缘的距离。例如，图4A示出了尖端部108的长度等于第二金属部2201的内边缘到声孔120的边缘的距离，即尖端部108的尖端贴着声孔120的边缘，这样使得本申请的抗ESD效果更好。
示例性地，每个尖端部108在第一基板110上的投影呈锐角三角形，并且每个锐角三角形的一个尖角指向声孔120的几何中心。由于尖端部108是锐角三角形，即尖端部108从尖端到底部在宽度上逐渐变大，使得电阻逐渐变小，更容易吸引附近的静电，使得抗ESD效果更好。
示例性地，至少一个尖端部108可以包括四个金属材质的尖端部(如图4B所示)，相邻的尖端部之间的间隔为90度。第二金属部2201通过贯穿第一基板110的过孔151与第二金属部2201进行电连接。
可以理解的是，尖端部还可以是其他形状，数量也可以不限于图4B示出的四个，所以本申请对于尖端部的个数和形状不做限定。
在实际PCB板设计中，为了避免声孔进锡渣，所以第二金属部2201(为图4B示出的金属环)的直径设计往往尽可能大，这样就导致了金属环与空气的介电强度叠加会大于第三功能组件2101-2的介电强度，当ESD电弧到达声孔入口处时，ESD电弧会优先进入产品内部，空气爆炸时会对产品内部的声学器件(比如MEMS器件和ASIC器件)造成不可逆的损害。
因而，本申请通过在第二金属部2201的内侧设置突出的尖端部108，突出的尖端距离声孔120更近。当ESD电弧达到产品的声孔120入口处时，由于ESD电弧会优先被产品外部附近的低介电强度的尖端部108吸引，而不会被高介电强度的第三功能组件2101-2吸引，从而ESD电弧不会打到产品内部的声学器件2101-1，从而大大降低了敏感的声学器件2101-1受到ESD电弧的影响。而ESD电弧被第二金属部2201的尖端部108吸引后，能量会通过与第二金属部2201接地的保护电路进行释放。
实施例三：
如图5A、图5B所示，图5A与上述图2B的主要区别是第二金属部2201，故本发明实施例中其它相同部件的描述可参照上述实施例，在此不再赘述。图5A示出的第二金属部2201包括第一接地部件22011和第二接地部件22012，第一接地部件22011和第二接地部件22012均围绕声孔120设置。
其中，第一接地部件22011和第二接地部件22012均围绕声孔120设置。如此使得第一接地部件22011与第二接地部件22012形成同心的双环结构，由上可见，相对于第二接地部件22012，第一接地部件22011距离更接近声孔120，所以第一接地部件22011更易于吸引声孔120周围的ESD电弧。所以当麦克风结构外部的ESD电弧打到麦克风结构上时，ESD电弧优先在声孔120靠近第一基板110的第二表面的一端被更接近声孔120的第一接地部件22011吸引，避免了ESD电弧通过声孔120进入麦克风结构内，由此避免了麦克风结构内的声学器件2101-1受到ESD电弧的损害。
另一方面，由于第一接地部件22011位于第二接地部件22012的内侧，所以第一接地部件22011能对第二接地部件22012上的焊球进行阻挡，以避免该焊球落入声孔120内，如此提高麦克风的使用寿命。因此，本申请所述麦克风结构能降低ESD电弧进入麦克风内的机率，提高麦克风的使用寿命。
示例性地，第一接地部件22011可以是围绕声孔120的环形结构。可以理解是，第一接地部件22011可不限于为环形结构，还可以是围绕声孔120的方形结构等，对此本申请不作限定。第二接地部件22012也可以是围绕声孔120的环形结构。同理，第二接地部件22012也不限于为环形结构，还可以是围绕声孔120的方形结构等，对此本申请不作限定。
示例性地，第一接地部件22011和第二接地部件22012可以均是金属环。第一接地部件22011和第二接地部件22012的材料可以是高电导率的材料。例如，该金属环的材料为铜。
进一步地，第一接地部件22011的外直径小于第二接地部件22012的内直径。也即第一接地部件22011与第二接地部件22012之间设置有间隙，以使第一接地部件22011与第二接地部件22012相间隔。声孔120位于第一接地部件22011的内直径限定的环形区域内。
示例性地，构成第一接地部件22011的金属环的宽度小于构成第二接地部件22012的金属环的宽度。例如，第二接地部件22012横向布置在第一基板110的第二表面(即下表面)上。该横向布置可以是第二接地部件22012沿平行基板的方向延伸。第二接地部件22012可用于与零电位或参考电位电性连接。
示例性地，第二绝缘部2202覆盖部分第二接地部件22012而形成靠近声孔120方向的外露接地区域19。
示例性地，第一金属部2102围绕声孔120设置。第一金属部2102与声孔120的中心轴线距离a加上在声孔120的中心轴线方向上第一金属部2102至第二功能组件220外表面(即第二功能组件220的下表面)的距离b之和大于第一接地部件22011与声孔120的中心轴线距离c加上在声孔120的中心轴线方向上第一接地部件22011至第二功能组件220外表面的距离d(即第二功能组件220的下表面)之和，即a+b>c+d；和/或第一金属部2102的面积小于第一接地部件22011的面积。当有ESD电弧打来时，ESD电弧会被第二金属部2201的第一接地部件22011吸引，而不容易被第一金属部2102吸引，从而不容易经过声孔120打到声学器件2101-1，保护了声学器件2101-1，提高了声学器件2101-1的ESD防护性能。
示例性地，第一接地部件22011和第二接地部件22012分别通过贯穿第一基板110的过孔与第一金属部2102电连接。具体地，过孔内设置有导电体。导电体与第一金属部2102和第二接地部件22012电连接。如此第一金属部2102能通过导电体和第二接地部件22012电连接。
示例性地，本申请实施例的麦克风结构还包括静电释放电路(图中未示出)。静电释放电路可与第一接地部件22011电耦合。该静电释放电路用于释放第一 接地部件22011所吸收的静电。
由上可见，相对于第二接地部件22012，距离更接近声孔120的第一接地部件22011更易于吸引声孔120周围的ESD电弧，而被第一接地部件22011吸引的ESD电弧所产生的静电被传导至静电释放电路，并由静电释放电路释放。
需要说明的是，所述过孔可以是两个，如图5A所示，两个过孔(151-1、151-2)分别为从第一基板110的第一表面(即上表面)贯穿至第二表面(即下表面)的第一过孔151-1和第二过孔151-2。通过第二过孔151-2将第一接地部件22011与第一金属部2102电连接，通过第一过孔151-1将第二接地部件22012与第一金属部2102电连接。
在另外一个实施例中，如图5C所示，所述过孔为一个，即过孔151。第一接地部件22011和第二接地部件22012均与过孔151的一端电连接。第一金属部2101-1与过孔151的另一端电连接。
实施例四：
如图6A、图6B所示，图6A与图4A的最主要区别在于第二金属部件2201，第二金属部220 1位于第一基板110的第二表面并围绕声孔120设置。图4A示出的第二金属部件2201在靠近声孔120的一端设置有尖端部108，图6A示出的第二金属部件2201在靠近声孔120的一端设置有静电拦截部109，静电拦截部109在垂直于第一基板110的方向上的投影部分覆盖声孔120在该方向上的投影，静电拦截部109的介电强度小于第三功能组件2101-2的介电强度。
示例性地，静电拦截部109包括至少一个挡板，并且至少一个挡板部分遮挡声孔120，这样可以使得外部的声波通过未被挡板遮挡的缝隙进入到声学器件2101-1内部。
示例性地，每个挡板的宽度可以小于声孔120的直径，可以使得外部的声波通过未被挡板遮挡的空间进入到声学器件2101-1内部。
示例性地，本申请实施例的麦克风结构还包括静电释放电路(图中未示出)。静电释放电路可与第二金属部件2201电耦合。该静电释放电路用于释放第二金属部件2201所吸收的静电。
其中，图6A示出第二金属部2201可以是金属环，并且静电拦截部109 包括两个金属材质并且是在同一平面垂直设置的第一挡板1091和第二挡板1092(如图6B所示)，但本申请对于挡板的个数和形状不做限定。
图6A示出的第三功能组件2101-2包括第一绝缘部2103，第二功能组件220包括第二金属部2201和第二绝缘部2202，第一绝缘部覆盖在第一基板110的第一表面(即上表面)，第二绝缘部覆盖部分第一基板110的第二表面(即下表面)。本申请关于第三功能组件2101-2和第二功能组件220的设置也可以参照上述实施例，可以并不限于图6A示出的示例，例如，第三功能组件2101-2也可以包括第一金属部和第一绝缘部，第一金属部设置在第一基板的第一表面，第一绝缘部覆盖部分或全部所述第一金属。
实施例五：
如图7A、图7B所示，第一金属部2102还包括延伸部(图中未示出)，延伸部覆盖在声孔120的内边缘并与第二金属部电2201电连接，第二金属部2201包括裸露在第一基板110的第二表面(即下表面)的露出区域，所述露出区域是第二金属部件2201的全部或部分区域。
图7A示出的第一绝缘部2103覆盖部分第一金属部2102，第二绝缘部2202可以没有覆盖第二金属部2201，所以从图7B可以看出露出区域基本上是第二金属部件2201的全部区域。
通过延伸部使得第一金属部2102和第二金属部2201实现电连接，并且第二金属部2201部分裸露或全部裸露，当有ESD电弧从第一基板110远离声学器件的一侧打到声孔120时，ESD电弧会被距离更近且没有被第二绝缘部2202遮挡的第二金属部2201吸引，不容易被距离更远且有被第一绝缘部2103遮挡的第一金属部2102吸引。也可以理解为，ESD电弧会被介电强度更低的第二金属部2201吸引，并且声孔120的边缘也是通过延伸部连通第二金属部2201，从而ESD电弧不容易经过声孔120打到声学器件，保护了声学器件，提高了声学器件的ESD防护性能。
如图7C、图7D所示，图7C与图7A的区别在于，图7C示出的第二绝缘部2202覆盖部分第二金属部2201，例如从图7D可以看出，第二绝缘部2202覆盖了第二金属部2201的一半区域左右。
如图7E、图7F所示，图7E与图7C的区别在于，图7E示出的第二绝缘 部2202呈间隔环状覆盖部分第二金属部2201，例如从图7G可以看出，第二绝缘部2202围绕着声孔120呈环状间隔覆盖第二金属部2201，即露出区域包括第二金属部2201的长方形环状金属区域和围绕声孔120的圆环形金属区域。本申请对长方形环状金属区域和圆环形金属露出区域的宽度也不做限定，并且对于露出区域的形状也不做限定。
实施例六：
如图8A所示，第三功能组件2101-2还包括静电疏导器件300，静电疏导器件300用于将进入声学器件2101-1的ESD电弧进行吸收并经第一金属部2102和第二金属部电2201进行释放。静电疏导器件300可设置在第一基板110的第一表面上，声学器件2101-1经第一基板110上的焊盘180与静电疏导器件300电连接，且静电疏导器件300也与第一金属部2102电连接，第一金属部2102通过贯穿第一基板110的通孔151与第二金属部2201电连接，以形成导电链路。
示例性地，静电疏导器件300在第一基板110的第一表面上的投影可与声学器件2101-1在第一基板110的第一表面上的投影部分重叠，例如静电疏导器件300可以布设在靠近专用集成电路2105的一端，这样由于静电疏导器件300布置在距离需保护的声学器件2101-1的较近地方，使得静电疏导器件300与专用集成电路2105之间的导电链路较短，静电疏导器件300能够将进入麦克风产品内部的ESD电弧进行快速吸收，并经过与第一金属部2102和/或第二金属部2201电连接的接地电路进行释放，可以阻止静电损害声学器件2101-1。
本申请还提供了另外一种结构，为了更合理的利用空间，静电疏导器件300可部分嵌入至第一基板110，如图8B所示。第一基板110上设有凹槽301，凹槽301是朝远离声学器件2101-1的方向突出，静电疏导器件300是放置在凹槽301中。在第一基板110的厚度方向上，凹槽301的深度可以大于或等于静电疏导器件300的高度，便于静电疏导器件300放置和节省空间。
因此，通过图8B提供的结构，能够将静电疏导器件300置于第一基板110的内部的凹槽301中，使得装入静电疏导器件300后的第一基板110的表面依然可以保持平整，不影响后续声学器件2101-1的装配，由于无需占用第一基 板110上面的空间，因此，可以提高第一基板110面向声学器件的空间利用率。
示例性地，为了提高静电疏导器件300的电气接入的便捷性及可靠性，可在凹槽301的侧壁上设置有至少两组焊垫，其中，一组焊垫302用于将静电疏导器件300与焊盘180连接起来，另一组焊垫303用于将静电疏导器件300与第一金属部2102连接起来。因此，通过在凹槽301的侧壁设置焊垫的方式，以便于静电疏导器件300的安装和电气导通。
示例性地，本申请示出的静电疏导器件300是二极管器件，所述二极管器件的阳极与对应的焊盘180电连接，所述二极管器件的阴极与所述第一金属部2102电连接。
示例性地，在一个实施方式中，所述二极管器件可以是ESD二极管。ESD二极管是一种过压、防静电保护元件，是为高速数据传输应用的I/O端口保护设计的器件，ESD二极管可以用来避免电子设备中的敏感电路受到ESD(静电放电)的影响。ESD二极管的工作原理如下：
将ESD二极管并联于电路中，当电路正常工作时，它处于截止状态(高阻态)，不影响线路正常工作；当电路出现异常过压并达到其击穿电压时，它迅速由高阻态变为低阻态，给瞬间电流提供低阻抗导通路径，同时把异常高压箝制在一个安全水平之内，从而保护被保护IC或线路；当异常过压消失，其恢复至高阻态，电路正常工作；当电压超过ESD二极管的导通电压的时候，就导通接地释放掉，由于正常信号电压一般不会达到ESD二极管的导通电压，所以不会通过导通地而产生损耗，而ESD电压一般超过ESD二极管的导通电压，会使ESD二极管发生导通，ESD电压通过接地释放掉，从而保护后级电路，不损害麦克风的内部元器件。
示例性地，在一个实施方式中，二极管器件也可以是瞬态电压抑制二极管器件(Transient Voltage Suppressor，TVS管)。TVS管的阳极电连接焊盘180，TVS管的阴极电连接第一金属部2102。当TVS管两极经受瞬间的高能量冲击时，它能以极高的速度(最高达1/(10^12)秒)，将其两极间的高阻抗骤然降低为低阻抗，吸收高达数千瓦的浪涌功率(大电流)，使两极间的电压箝位在一个预定的数值上，从而确保后面的电路元器件免受瞬态高能量的冲击而损坏。而且，TVS管具有体积小、功率大、无噪声、价格低等诸多优点。可选地， 所述TVS管为双向TVS管，以防止交流大电流对后级电路的元器件造成损坏。
因此，本申请通过在第一基板上设置有静电疏导器件，静电疏导器件经由导电链路与声学部件电连接，并且静电疏导器件在第一基板上的投影与声学器件在第一基板上的投影部分重叠，使得静电疏导器件距离保护声学器件的电路距离较近。当产生ESD电弧时，静电电弧优先由静电疏导器件快速吸收，电弧不会打到麦克风产品内部的声学器件(比如MEMS器件和ASIC器件)上，从而降低了敏感的MEMS器件和ASIC器件受到ESD电弧的影响。
实施例七：
本申请所述基础部件100还包括第二基板111，第二基板111位于第一基板110远离声学器件2101-1的一侧，第二功能组件220还包括导音管2203和整机外壳2204，导音管2203位于第一基板110的第二表面并贯穿第二基板111和整机外壳2204，第一基板110、第二基板111以及整机外壳2204均围绕声孔120设置。导音管2203形成一通路104，通路104具有第一开口104-1和第二开口104-2，第一开口104-1与声孔120相连通，第二开口104-2与外部空间相连通，第一开口104-1的中轴线与第二开口104-2的中轴线可以是同一中轴线(如图9A所示)，也可以相互错开(如图9B所示)。
示例性地，第一基板110可以是PCB板，第二基板111可以是PCBA板，例如，可以将PCB板通过焊盘直接焊接到电子设备的PCBA板上。位于第一基板110的第一表面的声学器件2101-1可通过屏蔽罩(即封装外壳)230进行封装。第一基板110可通过连接结构103与第二基板111连接。
示例性地，声孔120和导音管2203的形状可以是多边形，该多边形例如可以是三角形、四边形、五边形等，故本申请对于声孔120和导音管2203的形状不做限定。
如图9A所示，在导音管2203远离所述声学器件的一端管体内壁(即导音管前端)设有金属块102，金属块102朝声孔120的中心轴线方向露出，露出的部分金属块102可以吸引由导音管2203前端进入ESD电弧。
示例性地，金属块102的厚度小于导音管2203管体的壁厚，金属块102沿管体轴线方向的长度小于导音管2203管体的长度。
由于金属块102设置在导音管2203的前端，当有ESD电弧由远离声学器 件2101-1的一侧进入导音管2203时，金属块102会将ESD电弧吸引并进行释放，并且导音管2203增加了静电到麦克风内部的声学器件2101-1的距离，削弱了瞬间气压变化对声学器件2101-1的影响，从而降低了ESD电弧进入到声学器件2101-1内部的几率，从而提高了麦克风抗ESD性能。
示例性地，金属块102可以是围绕着导音管2203呈环状设置，也可以由多个金属块102围绕着导音管2203内壁间隔设置，故本申请对于金属块的形状和数量不做限定。
现有技术相关方案中，由于麦克风内部有声学器件2101-1，当ESD电弧打到导音管2203时，由于介电强度的差异，ESD电弧会被麦克风SMT时裸露的锡和焊盘吸引，使得ESD电弧的位置距离声学器件2101-1只有几百微米，导致声学器件2101-1无法承受瞬间的气压变换从而造成永久的损伤。因此，本申请通过设置导音管2203并在导音管2203的管体内设置金属块102，从而加长了ESD电弧到麦克风内部的声学器件2101-1的距离，金属块102会将吸引的ESD电弧在导音管2203的前端处释放，从而降低了ESD电弧进入到导音管2203内部的几率，从而提高了麦克风抗ESD性能。
在本申请还提供另外一种导音管结构，如图9B所示，导音管2203在第二基板111和整机外壳2204之间形成弯折的通路104，弯折的通路104的路径长度大于第二基板111到整机外壳2204之间的距离，来自外部空间的声波从第二开口104-2进入弯折的通路104，并经过该通路104和第一开口104-1进入声孔120，由此，外界声波能经过导音管2203和声孔120传至声学器件2101-1上。进而使得声学器件2101-1能接收该声波。
示例性地，第一开口104-1的中轴线与第二开口104-2的中轴线相互错开，由于第二开口104-2未正对声学器件2101-1，故从第二开口104-2进入的ESD电弧与声学器件2101-1之间的距离较远，避免了声学器件2101-1难以承受ESD电弧瞬态高压，进而损坏部分结构的情况。
示例性地，导音管2203包括第一弯折部2203-1和第二弯折部2203-2，例如第一弯折部2203-1和第二弯折部2203-2的弯折角可以均是90度。如此导音管2203通过第一弯折部2203-1和第二弯折部2203-2进行弯折，进而形成折叠结构，即导音管2203通过第一弯折部2203-1和第二弯折部2203-2形成3 段折叠的结构。由此，导音管2203的路径长度为3段折叠的结构的路径长度之和。由上可见，导音管2203的路径长度大于整机外壳2204与基础部件100之间的距离。换句话说，相对于直线形结构，具有折叠结构的导音管2203的路径长度更长。
图9B示出的弯折的通路104相对于图9A示出的不弯折的通路104，弯折的通路104的路径长度更长，可以使得声波至外部空间向声孔120传播的路径长度变长。当ESD电弧集中于导音管2203外侧时，ESD电弧与声学器件2101-1之间的距离增大，因此ESD电弧会优先从导音管2203外侧释放掉，而不会进入声孔120内部，使得声学器件2101-1可以承受住ESD电弧瞬态高压，以达到提升产品抗ESD性能的目的。
可以理解的是，虽然图9A和图9B未示出第一金属部、第一绝缘部、第二金属部以及第二绝缘部的结构，但基于图9A和图9B的基础上，本申请也可以包括第一金属部、第一绝缘部、第二金属部以及第二绝缘部的一种或多种部件组合的结构，具体也参考上述实施例，在此不再赘述。
另外，本申请还提供一种封装结构，所述封装结构包括上述任意一个实施例中的一种麦克风结构。
以下就封装结构的具体实施例进行描述。
实施例一：
如图10所示，所述封装结构除了包括上述任意一个实施例中的麦克风结构，还可以包括屏蔽罩230，屏蔽罩可以是用于封装器件的金属外壳。屏蔽罩230可罩设于声学器件2101-1(例如微机电系统2104和专用集成电路2105)。屏蔽罩230同样设置在第一基板110朝向微机电系统2104和专用集成电路2105一侧，屏蔽罩230可以完全罩设微机电系统2104和专用集成电路2105，从而保护微机电系统2104和专用集成电路2105，使声学器件2101-1免于被远离第一基板110一侧的静电影响。声学器件2101-1另一侧为第一基板110，同样可以保护声学器件2101-1，而第一基板110上的声孔120附近的静电又会被第二金属部2201吸引走，从而全方位的保护声学器件2101-1免于被静电影响。当然，封装结构还可以通过其他方式从声学器件2101-1远离第一基板110一侧来防护静电，如设置静电导引电路等。屏蔽罩230还可以作为微机电系统 2104和专用集成电路2105的封装壳体。
实施例二：
一般声孔开设的位置在于第一基板上，但实际应用中，声孔也可以开设在屏蔽罩上，即声孔可以设置在屏蔽罩的任一位置。
如图11所示，所述封装结构包括屏蔽罩230，屏蔽罩230的描述可参照上述实施例，在此不在赘述。
示例性地，屏蔽罩230的任一位置设有在厚度方向上贯通该屏蔽罩230的声孔120，屏蔽罩230围绕声孔120设置有至少一个尖端部108，尖端部108向声孔120的几何中心处延伸。尖端部108的描述可参照上述图4A～4B所述，在此不再赘述。
实施例三：
如图12所示，所述封装结构包括屏蔽罩230，屏蔽罩230的描述可参照上述实施例，在此不在赘述。
示例性地，屏蔽罩230的任一位置设有在厚度方向上贯通该屏蔽罩230的声孔120，屏蔽罩230在围绕声孔120的位置设置有第一接地部件22011和第二接地部件22012，第一接地部件22011和第二接地部件22012的结构如上述图5A所示，在此不再赘述。
通过第一接地部件22011和第二接地部件22012形成同心的双环结构。由此，相对于第二接地部件22012，第一接地部件22011距离更接近声孔120，所以第一接地部件22011更易于吸引声孔120周围的ESD电弧。进一步地，第一接地部件22011可以是围绕声孔120的环形结构。
实施例四：
如图13所示，所述封装结构包括屏蔽罩230，屏蔽罩230的描述可参照上述实施例，在此不在赘述。
示例性地，屏蔽罩230的任一位置设有在厚度方向上贯通该屏蔽罩230的声孔120，屏蔽罩230在围绕声孔120的位置设置有静电拦截部109，静电拦截部109的介电强度小于所述封装结构的内部空间的介电强度，其中，所述静电拦截部109在垂直于第一基板110的方向上的投影部分覆盖声孔120在该方向上的投影。类似部件的结构如上述所示，在此不再赘述。
而且，本申请实施例还提供一种电子设备，电子设备可以包括上述任意一个实施例中的麦克风结构，类似部件的结构如上述所示，在此不再赘述。
示例性地，电子设备可以为具有音频播放功能的设备，如手机、音箱、平板电脑、电视机、笔记本电脑、点读机等任何具有将声音信号转换为电信号或者将电信号转换为声音信号的设备，本申请实施例不对电子设备的类型进行限定。
以上对本申请实施例所提供的一种麦克风结构、封装结构及电子设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (24)

  1. 一种麦克风结构，包括：
    基础部件，其包括至少一个基板，所述至少一个基板包括第一基板，所述第一基板具有第一表面和与该第一表面相对的第二表面，所述第一基板设有在厚度方向上贯通所述第一基板的声孔；
    功能组件，其包括第一功能组件和第二功能组件，所述第一功能组件包括声学器件和第三功能组件，所述声学器件用于接收来自所述声孔的声波，所述第一功能组件位于所述第一基板的第一表面，所述第二功能组件位于所述第一基板的第二表面；
    其中，所述第三功能组件包括第一金属部和第一绝缘部，所述第一金属部设置在所述第一基板的第一表面，所述第一绝缘部覆盖部分或全部所述第一金属部；所述第二功能组件包括第二金属部和第二绝缘部，所述第二金属部设置在所述第一基板的第二表面，所述第二绝缘部覆盖部分所述第二金属部以使得所述第二金属部朝向所述声孔的一端露出，所述第一金属部用于与所述第一基板的地电连接，所述第二金属部用于与所述第一基板的地或释放静电的电路电连接，所述第一金属部和所述第二金属部均围绕所述声孔设置。
  2. 如权利要求1所述的麦克风结构，其中所述第一金属部还包括延伸部，所述延伸部覆盖在所述声孔的内边缘并与所述第二金属部电连接，所述第二金属部包括裸露在所述第一基板的第二表面的露出区域，所述露出区域是所述第二金属部件的全部区域或部分区域。
  3. 如权利要求1所述的麦克风结构，其中所述第一金属部与所述声孔的距离加上所述第一基板的厚度大于所述第二金属部与所述声孔的距离，和/或所述第一金属部的面积小于所述第二金属部的面积，和/或所述第一金属部与所述声孔的距离大于所述第二金属部与所述声孔的距离。
  4. 如权利要求1所述的麦克风结构，其中所述第二金属部包括第一接地部件和第二接地部件，所述第一接地部件和所述第二接地部件均围绕所述声孔设置。
  5. 如权利要求4所述的麦克风结构，其中所述第一接地部件和所述第二 接地部件均是金属环，并且所述第一接地部件的外直径小于所述第二接地部件的内直径，所述声孔位于所述第一接地部件的内直径限定的环形区域。
  6. 如权利要求4所述的麦克风结构，其中构成所述第一接地部件的金属环的宽度小于构成所述第二接地部件的金属环的宽度。
  7. 如权利要求4所述的麦克风结构，其中所述第一接地部件和所述第二接地部件通过贯穿所述第一基板的通孔与所述第一金属部电连接。
  8. 如权利要求4所述的麦克风结构，所述第一金属部与所述声孔的中心轴线距离加上在所述声孔的中心轴线方向上所述第一金属部至所述第二功能组件外表面的距离之和大于所述第一接地部件与所述声孔的中心轴线距离加上在所述声孔的中心轴线方向上所述第一接地部件至所述第二功能组件外表面的距离之和，和/或所述第一金属部的面积小于所述第一接地部件的面积。
  9. 如权利要求1所述的麦克风结构，其中所述基础部件还包括第二基板，所述第二基板位于所述第一基板远离所述声学器件的一侧，所述第二功能组件还包括导音管和整机外壳，所述导音管位于所述第一基板的第二表面并贯穿所述第二基板和所述整机外壳，所述第一基板、第二基板以及所述整机外壳均围绕所述声孔设置。
  10. 如权利要求9所述的麦克风结构，其中在导音管远离所述声学器件的一端管体内壁设有金属块，所述金属块朝所述声孔的中心轴线方向露出。
  11. 如权利要求10所述的麦克风结构，其中所述金属块的厚度小于所述导音管管体的壁厚，所述金属块沿管体轴线方向的长度小于所述导音管管体的长度。
  12. 如权利要求9所述的麦克风结构，其中所述导音管在所述第二基板和所述整机外壳之间形成一弯折通路，所述弯折通路的路径长度大于所述第二基板到所述整机外壳之间的距离，声波通过所述弯折通路进入所述声孔。
  13. 如权利要求12所述的麦克风结构，其中所述导音管包括第一开口和第二开口，所述第一开口与所述声孔相连通，所述第二开口与外部空间相连通，并且所述第一开口的中轴线与所述第二开口的中轴线相互错开。
  14. 如权利要求1所述的麦克风结构，其中在所述第二金属部设置有至少一个尖端部，所述尖端部一端与所述第二金属部的内边缘贴合，另一端向所述 声孔的几何中心处延伸。
  15. 如权利要求14所述的麦克风结构，其中所述尖端部的长度大于或等于所述第二金属部的内边缘到所述声孔的边缘的距离。
  16. 如权利要求14所述的麦克风结构，其中每个所述尖端部在所述第一基板的第二表面上的投影呈锐角三角形，并且每个锐角三角形的一个尖角指向所述声孔的几何中心。
  17. 如权利要求1所述的麦克风结构，所述第二金属部在靠近所述声孔的一端设置有静电拦截部，所述静电拦截部在垂直于所述第一基板的方向上的投影覆盖部分所述声孔在该方向上的投影。
  18. 如权利要求17所述的麦克风结构，其中所述静电拦截部包括至少一个挡板，并且所述至少一个挡板遮挡部分所述声孔。
  19. 如权利要求1所述的麦克风结构，其中所述第三功能组件还包括静电疏导器件，所述静电疏导器件用于将进入所述声学器件的ESD电弧进行吸收并经所述第一金属部和所述第二金属部电进行释放。
  20. 如权利要求19所述的麦克风结构，其中在所述第一基板的第一表面上设置有一凹槽，所述凹槽朝远离所述声学器件的方向突出并用于放置所述静电疏导器件。
  21. 如权利要求20所述的麦克风结构，其中在所述第一基板的厚度方向上，所述凹槽的深度大于或等于所述静电疏导器件的高度。
  22. 如权利要求19所述的麦克风结构，其中所述静电疏导器件是二极管器件，所述二极管器件的阳极与所述声学器件电连接，所述二极管器件的阴极与所述第一金属部连接。
  23. 一种封装结构，其包括如权利要求1至22中任一项所述的麦克风结构。
  24. 一种电子设备，其包括如权利要求1至22中任一项所述的麦克风结构。
PCT/CN2022/126332 2021-10-22 2022-10-20 麦克风结构、封装结构及电子设备 WO2023066324A1 (zh)

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CN215935103U (zh) * 2021-10-22 2022-03-01 苏州敏芯微电子技术股份有限公司 一种麦克风结构、封装结构及电子设备
CN215935100U (zh) * 2021-10-22 2022-03-01 苏州敏芯微电子技术股份有限公司 一种麦克风结构、封装结构及电子设备
CN215935102U (zh) * 2021-10-22 2022-03-01 苏州敏芯微电子技术股份有限公司 一种麦克风结构及电子设备
CN215935101U (zh) * 2021-10-22 2022-03-01 苏州敏芯微电子技术股份有限公司 麦克风结构及电子设备
CN216054695U (zh) * 2021-10-22 2022-03-15 苏州敏芯微电子技术股份有限公司 封装结构、线路板及电子设备
CN216054696U (zh) * 2021-10-22 2022-03-15 苏州敏芯微电子技术股份有限公司 封装结构、线路板及电子设备
CN216491057U (zh) * 2021-10-22 2022-05-10 苏州敏芯微电子技术股份有限公司 一种麦克风结构及电子设备
CN216626052U (zh) * 2021-10-22 2022-05-27 苏州敏芯微电子技术股份有限公司 麦克风结构、封装结构及电子设备
CN216626051U (zh) * 2021-10-22 2022-05-27 苏州敏芯微电子技术股份有限公司 麦克风组件、麦克风封装结构及具有其的电子设备

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